arai masakazu 荒井昌和

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Arai Masakazu 荒井昌和

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Researcher Number	90522003
Other IDs
Affiliation (Current)	2025: 宮崎大学, 工学部, 准教授
Affiliation (based on the past Project Information) *help	2015 – 2024: 宮崎大学, 工学部, 准教授
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Electron device/Electronic equipment Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator 結晶成長 / 半導体レーザ / 半導体 / レーザ / 中赤外 / 光センシング / シリコンフォトニクス / 受光素子 / 光半導体デバイス / 有機金属気相成長 / センシング / 中赤外波長 / 電子デバイス … More Except Principal Investigator … More 横方向結晶成長 / トンネルFE / 横方向成長 / バイポーラトランジスタ / 化合物半導体 / ナノシート / 低消費電力 / ラテラルHBT / トンネルFET / ヘテロ構造 / バンド構造 / 超格子 / 中赤外線 / InAs/GaSb / MOVPE / PLスペクトル / 発光遷移図 / 発光の温度-励起強度ダイアグラム / エネルギーバンド計算 / 励起光強度依存性 / フォトルミネッセンス / バンド計算 / MOVPE法 / 中赤外光源 / 超格子構造 Less

格子緩和層とType-II型ヘテロ材料を用いた半導体レーザによる高温動作限界の打破Principal Investigator
- Principal Investigator
  
  荒井昌和
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Miyazaki
Novel broadband mid-infrared emitting quantum structures fabricated by metal organic vapor phase epitaxy
- Principal Investigator
  
  前田幸治
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Miyazaki
Creation of compound semiconductor lateral heterojunctions and their application to electronic devices
- Principal Investigator
  
  Miyamoto Yasuyuki
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Crystal growth of group III-V and group IV for mid-infrared silicon photonicsPrincipal Investigator
- Principal Investigator
  
  Arai Masakazu
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  University of Miyazaki
Study on crystal growth and dislocation control for wide band optical sensing devicesPrincipal Investigator
- Principal Investigator
  
  Arai Masakazu
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Miyazaki
超広波長帯域光源実現のためのメタモルフィック材料集積の研究Principal Investigator
- Principal Investigator
  
  荒井昌和
- Project Period (FY)
  2015
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  University of Miyazaki

All 2024 2023 2022 2021 2020 2019 2018 2017 2016

All Journal Article Presentation Patent

[Journal Article] Metal Organic Vapor‐Phase Epitaxy Growth of Multilayer Stacked InAsSb/InAsP Superlattices on GaAs and InAs Substrate2024
- Author(s)
  Hombu Koki、Hikita Kenshiro、Fujisawa Takeshi、Maeda Koji、Arai Masakazu
- Journal Title
  
  physica status solidi (a)
  
  Volume: - Issue: 13
- DOI
  10.1002/pssa.202300824
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04245
[Journal Article] GaAsSb/InGaAs tunnel FETs using thick SiO<sub>2</sub> mask for regrowth2024
- Author(s)
  Fan Jiawei、Xu Ruifeng、Arai Masakazu、Miyamoto Yasuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 3 Pages: 03SP75-03SP75
- DOI
  10.35848/1347-4065/ad27be
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01384
[Journal Article] MOVPE法で作製したGaSb層厚を変化させたInAs/GaSb超格子の中赤外発光過程2022
- Author(s)
  前田幸治, 大濱寛士, 岩切優人, 荒井昌和, 藤澤剛
- Journal Title
  
  宮崎大学工学部紀要
  
  Volume: 51 Pages: 35-40
- Data Source
  KAKENHI-PROJECT-22K04245
[Journal Article] Microscopic gain analysis of modulation-doped GeSn/SiGeSn quantum wells: epitaxial design toward high-temperature lasing2019
- Author(s)
  Fujisawa T.、Arai M.、Saitoh K.
- Journal Title
  
  Optics Express
  
  Volume: 27 Issue: 3 Pages: 2457-2457
- DOI
  10.1364/oe.27.002457
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K04515
[Journal Article] GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device2018
- Author(s)
  Arai Masakazu、Takahashi Kakeru、Yamagata Yuya、Inoue Yuki、Wakaki Ryosuke、Maeda Koji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 8S2 Pages: 08PD05-08PD05
- DOI
  10.7567/jjap.57.08pd05
- NAID
  210000149469
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06305
[Journal Article] 中赤外発光受光素子用III-V(Sb)系材料の結晶成長と評価2017
- Author(s)
  荒井昌和，高橋翔, 井上裕貴, 藤原由生,吉元圭太，山形勇也，西岡賢祐,前田幸治
- Journal Title
  
  レーザー研究
  
  Volume: 45 Pages: 768-772
- NAID
  130007957357
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06305
[Patent] 発光素子2022
- Inventor(s)
  前田幸治、荒井昌和、藤澤剛
- Industrial Property Rights Holder
  前田幸治、荒井昌和、藤澤剛
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-134276
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-22K04245
[Presentation] Optical Transition Energy of InAs/GaSb Type-II Superlattice Investigated by Using Photoluminescence and Photoreflectance Spectroscopy2024
- Author(s)
  Yatabe T., Taketa N., Arai M., Maeda K., Ikari T., Fukuyama A.
- Organizer
  28th Microoptics Conference, MOC 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04245
[Presentation] MOVPE法で作製した格子整合系 InAs/GaAsSb超格子の中赤外発光の温度依存性2023
- Author(s)
  小佐治大輔、荒井昌和、藤澤剛、前田幸治
- Organizer
  2023年第84回応用物理学会
- Data Source
  KAKENHI-PROJECT-22K04245
[Presentation] MOVPE法で作製した格子整合 InAs/GaAsSb超格子の中赤外領域における発光の励起強度依存性2023
- Author(s)
  前田幸治、藤澤剛、荒井昌和
- Organizer
  2023年第84回応用物理学会
- Data Source
  KAKENHI-PROJECT-22K04245
[Presentation] GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowt2023
- Author(s)
  R. Xu, J. Fan, M. Arai, Y. Miyamoto
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01384
[Presentation] InGaSb層を導入したGaAs基板上InAsSbの結晶性評価2022
- Author(s)
  本部好記，中川翔太，岩切優人，前田幸治，荒井昌和
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] Wide Wavelength Range Emission from InAs/GaSb Type-II Superlattice Grown by MOVPE2022
- Author(s)
  Masakazu Arai, Yuto Iwakiri, Takeshi Fujisawa, and Koji Maeda
- Organizer
  28th International Semicondutor Laser Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04245
[Presentation] GaAs基板上メタモルフィックInAsSbへの熱アニールによる結晶性への影響評価2022
- Author(s)
  中川翔太，本部好記，岩切優人，前田幸治，荒井昌和
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] Temperature Dependence of Mid-infrared Emission Process of InAs/GaSb Superlattices Grown by MOVPE2022
- Author(s)
  Masakazu ARAI, Koji MAEDA, Yuto IWAKIRI and Takeshi FUJISAWA
- Organizer
  CLEO-PR 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04245
[Presentation] MOVPE法で作製したInAs/GaSb超格子の中赤外領域における広域発光2022
- Author(s)
  岩切優人, 荒井昌和 , 藤澤剛 , 前田幸治
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04245
[Presentation] MOVPE法によりGaAs基板上に成長したZnドープInAs膜のラマン分光法による評価2021
- Author(s)
  平田康史，中川翔太，荒井昌和，前田幸治
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] GaAs基板上InAs成長層の表面ラフネスへのZnドープの影響調査2021
- Author(s)
  中川翔太，今村優希, 大濱寛士, 前田幸治, 荒井昌和
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] GaAs基板上InAs成長層の表面ラフネスへのZnドープの影響調査2021
- Author(s)
  中川翔太，今村優希, 大濱寛士, 前田幸治, 荒井昌和
- Organizer
  応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] GaAs/InAs/GaAsヘテロ構造の電気特性、中赤外受光感度特性評価2021
- Author(s)
  荒井昌和、中川翔太、前田幸治
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] Zn Doping Effect on Surface Morphology of Metamorphic InAs on GaAs Grown by MOVPE2021
- Author(s)
  Shota Nakagawa,Yuki Imamura,Yasushi Hirata, Koji Maeda and Masakazu Arai
- Organizer
  Micro Optics Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] SIMS、XRD を用いた InAs/GaSb 超格子中の As 濃度推定2020
- Author(s)
  今村優希、中川翔太、大濱寛士、前田幸治、荒井昌和
- Organizer
  応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] MOVPE 法で作製したInAs/GaSb 超格子の中赤外PL スペクトルの励起強度依存性2020
- Author(s)
  大濱寛士、前田幸治、荒井昌和、藤澤剛、今村優希、荒井昌和
- Organizer
  応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] Optimization of gas flow sequence for mid-infrared range Sb-based superlattice using MOCVD2019
- Author(s)
  Masakazu Arai,Yuki Imamura,Koji Maeda
- Organizer
  EMN Meeting on Epitaxy 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] Growth Temperature and Sb Flow Dependence of Surface Morphology of Metamorphic InAs(Sb)on GaAs substrate Grown by MOVPE2019
- Author(s)
  Yuki Imamura,Miki Shoiriki,Koji Maeda,Masakazu Arai
- Organizer
  CSW2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] InAs/GaSb超格子のV族混晶化の成長中断時間による制御2019
- Author(s)
  今村優希，大濱寛仁,前田幸治,荒井昌和
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] MOVPE growth and evaluation of mid-infrared range superlattice2019
- Author(s)
  Masakazu Arai,Yuki Imamura,Takeshi Fujisawa,Koji Maeda
- Organizer
  Asia Pacific Society for Materials Research 2019 annual meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] 2段階バッファ層を用いたメタモルフィックIｎAs/GaSb超格子の作製と評価2019
- Author(s)
  今村優希, 大濱寛士, 前田幸治, 藤澤剛, 荒井昌和
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] Growth and PL Measurement of Metamorphic InAs and InAs/GaSb Superlattice using MOVPE for Mid-Infrared Photonic Devices2019
- Author(s)
  Yuki Imamura,Miki Shoiriki,Tomohito Ohama,Koji Maeda,Masakazu Arai
- Organizer
  OECC2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K04515
[Presentation] MOVPE Growth of AlGaInP Distributed Bragg Reflector on GaAs (311)B for Resonant Cavity Photovoltaic Receiver for Laser Light2018
- Author(s)
  Masakazu Arai, Shinnosuke Tsuboyama, Kensuke Hiwada, Masaya Kamikado, Ryosuke Wakaki, and Koji Maeda
- Organizer
  19th Internatinal Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] Metalorganic Precursors Dependence of Impurity Concentration in AlGaAsSb and Optical Characteristics of InAs/GaAsSb Superlattice2018
- Author(s)
  Kakeru Takahashi, Yuya Yamagata, Yuki Fujiwara, Koji Maeda, Masakazu Arai
- Organizer
  19th Internatinal Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] Layer Thickness Dependence of Lattice Mismatch and Emission Wavelength on MOVPE Grown InAs/GaSb Superlattice for Mid-infrared Photonic Devices2018
- Author(s)
  Masakazu Arai, Yuya Yamagata, Ryosuke Wakaki
- Organizer
  23rd Micro Optics Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] Sn Concentration and Surface Morphology of GeSn Layer on GaAs (311)B Substrate Grown by MOVPE2018
- Author(s)
  Yuki Fujiwara, Kakeru Takahashi, Takaeshi Fujisawa, Koji Maeda, and Masakazu Arai
- Organizer
  19th Internatinal Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] Wavelength Range Extension by Chirped and Nitrogen Incorporated InGaAs(N) Quantum Wells for Super Luminescent Diode2017
- Author(s)
  Yuga Imamura, Keita Yoshimoto, Masakazu Arai
- Organizer
  CLEO Pacific Rim 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] MOVPE法によるInAs基板上AlGaAsSb成長におけるAl材料依存性2017
- Author(s)
  山形　勇也、吉元　圭太、今村　優雅、荒井　昌和
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] Design and Growth of Metamorphic Sb-based materials on GaAs substrate for Mid-Infrared Photonic Devices2017
- Author(s)
  Keita Yoshimoto, Yuya Yamagata,Yuga Imamura and Masakazu Arai
- Organizer
  CLEO Pacific Rim 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] MOVPE法を用いたInAs基板上InAsSb量子井戸の歪補償障壁層検討2017
- Author(s)
  吉元　圭太、山形　勇也、荒井　昌和
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] Emission Spectrum Evaluation of 0.8 - 1.1 µm Range Chirped Multiple Quantum Wells for Optical Sensing2017
- Author(s)
  Masaya Kamikado, Yuga Imamura and Masakazu Arai
- Organizer
  Micro Optics Conference 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] MOVPE Growth of Lattice Matched InAs/GaAsSb Superlattice on InAs Substrate for Mid-Infrared Sensing Devices2017
- Author(s)
  Kakeru Takahashi, Yuki Fujiwara, Yuya Yamagata, Keita Yoshimoto, Yuki Inoue, Ryosuke Wakaki, Koji Maeda, Masakazu Arai
- Organizer
  Micro Optics Conference 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] 中赤外帯域InAsSb量子井戸成長における障壁層材料依存性2016
- Author(s)
  吉元　圭太、今村　優雅、荒井　昌和
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] メタモルフィック成長を用いた中赤外帯域type-Ⅰ型レーザの構造検討2016
- Author(s)
  吉元圭太、今村優雅、荒井昌和
- Organizer
  応用物理学会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15H06513
[Presentation] 光センシング用SLDの利得波長帯域を拡大するInGaAs, InGaAsN 量子井戸の複合構造の検討2016
- Author(s)
  今村優雅、神門雅也、荒井昌和
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K06305
[Presentation] 光ガスセンシング用中赤外半導体レーザ、ＬＥＤ、受光素子のための格子歪緩和による波長域拡大の検討2016
- Author(s)
  吉元　圭太，西岡　賢祐，荒井　昌和
- Organizer
  レーザー学会
- Place of Presentation
  名城大学
- Year and Date
  2016-01-11
- Data Source
  KAKENHI-PROJECT-15H06513
[Presentation] ３～５μm 帯GaAs基板上InAsSbのMOVPE成長2016
- Author(s)
  今村優雅、吉元圭太、荒井昌和
- Organizer
  応用物理学会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15H06513

1. 前田幸治 (50219268)

# of Collaborated Projects: 2 results

# of Collaborated Products: 14 results
2. 藤澤剛 (70557660)

# of Collaborated Projects: 2 results

# of Collaborated Products: 7 results
3. Miyamoto Yasuyuki (40209953)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
4. 福田浩一 (00586282)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 菅原聡 (40282842)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 後藤高寛 (70827914)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

arai masakazu 荒井 昌和

Arai Masakazu 荒井 昌和

Research Projects

Research Products

Co-Researchers

格子緩和層とType-II型ヘテロ材料を用いた半導体レーザによる高温動作限界の打破Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Novel broadband mid-infrared emitting quantum structures fabricated by metal organic vapor phase epitaxy

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Creation of compound semiconductor lateral heterojunctions and their application to electronic devices

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Crystal growth of group III-V and group IV for mid-infrared silicon photonicsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on crystal growth and dislocation control for wide band optical sensing devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

超広波長帯域光源実現のためのメタモルフィック材料集積の研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Metal Organic Vapor‐Phase Epitaxy Growth of Multilayer Stacked InAsSb/InAsP Superlattices on GaAs and InAs Substrate2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] GaAsSb/InGaAs tunnel FETs using thick SiO<sub>2</sub> mask for regrowth2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] MOVPE法で作製したGaSb層厚を変化させたInAs/GaSb超格子の中赤外発光過程2022

Author(s)

Journal Title

Data Source

[Journal Article] Microscopic gain analysis of modulation-doped GeSn/SiGeSn quantum wells: epitaxial design toward high-temperature lasing2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] 中赤外発光受光素子用III-V(Sb)系材料の結晶成長と評価2017

Author(s)

Journal Title

NAID

Data Source

[Patent] 発光素子2022

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Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

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Data Source

[Presentation] Optical Transition Energy of InAs/GaSb Type-II Superlattice Investigated by Using Photoluminescence and Photoreflectance Spectroscopy2024

Author(s)

arai masakazu 荒井昌和

Arai Masakazu 荒井昌和

[Presentation] MOVPE法で作製した格子整合 InAs/GaAsSb超格子の中赤外領域における発光の励起強度依存性2023

[Presentation] GaAs基板上メタモルフィックInAsSbへの熱アニールによる結晶性への影響評価2022

[Presentation] MOVPE法によりGaAs基板上に成長したZnドープInAs膜のラマン分光法による評価2021

[Presentation] GaAs/InAs/GaAsヘテロ構造の電気特性、中赤外受光感度特性評価2021