fujikawa sachie 藤川紗千恵

… Alternative Names

FUJIKAWA Sachie 藤川紗千恵

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Researcher Number	90550327
Other IDs
Affiliation (Current)	2025: 埼玉大学, 理工学研究科, 助教
Affiliation (based on the past Project Information) *help	2024 – 2025: 埼玉大学, 理工学研究科, 助教 2017 – 2018: 東京電機大学, 工学部, 助教 2016: 東京理科大学, 基礎工学部電子応用工学科, 助教 2015: 東京理科大学, 基礎工学部, 助教 2014: 理化学研究所, 平山量子光素子研究室, 研究員 2012: 独立行政法人理化学研究所, 平山量子光素子研究室, 特別研究員 2010 – 2011: 独立行政法人理化学研究所, テラヘルツ量子素子研究チーム, 基礎科学特別研究員
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering Except Principal Investigator Broad Section D / Electron device/Electronic equipment / Applied materials science/Crystal engineering
Keywords	Principal Investigator LED / MOCVD / InSbN / 遠赤外 / Ⅲ-Ⅴ族半導体 / 希薄窒化物半導体 / ナローバンドギャップ / Si基板 / サファイア / sapphire / AlGaN / AlN / DUV-LED … More Except Principal Investigator … More MBE結晶成長 / 窒化物半導体 / サブバンド間遷移発光 / テラヘルツ / 量子カスケードレーザー / 電子・電気材料 / 低消費電力・高エネルギー密度 / テラヘルツ/赤外材料・素子 / 電子デバイス・機器 / 量子補正モンテカルロシミュレーション / ラフネス散乱 / InSb / 極限性能トランジスタ / 遮断周波数 / 電子移動度 / 格子歪 / 電子有効質量 / InGaSb / HEMT / 高電子移動度トランジスタ / テラヘルツ領域 / 貫通転位密度 / 光取り出し効率 / 内部量子効率 / 光取りだし効率 / 縦型LED / Si基板 / MOCVD / AlN / AlGaN / 深紫外LED Less

A Study on realizing unexplored frequency and room temperature operation THz-QCL through innovation of inter-subband transition mechanism
- Principal Investigator
  
  平山秀樹
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  Institute of Physical and Chemical Research
Development of Ultra-High Performance Sb-Based Teraherts Transistors
- Principal Investigator
  
  Fujishiro Hiroki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science
Elucidation of physical properties of Sb-based dilute nitride semiconductor and creation of high brightness far infrared light emitting elementPrincipal Investigator
- Principal Investigator
  
  FUJIKAWA Sachie
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Denki University
  Tokyo University of Science
Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates
- Principal Investigator
  
  HIRAYAMA Hideki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The Institute of Physical and Chemical Research
Development of deep ultraviolet LED and LD on nitride semiconductorPrincipal Investigator
- Principal Investigator
  
  FUJIKAWA Sachie
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The Institute of Physical and Chemical Research

All 2017 2016 2015 2014 2013 2012 2011 2010 Other

All Journal Article Presentation Book Patent

[Book] 深紫外LED高効率化への新たな進展2014
- Author(s)
  平山秀樹、前田哲利、藤川紗知恵、豊田史朗、鎌田憲彦
- Total Pages
  9
- Publisher
  オプトロニクス（OPTRONICS）
- Data Source
  KAKENHI-PROJECT-24246010
[Book] InterLab特集2014
- Author(s)
  平山秀樹、前田哲利、藤川紗知恵、豊田史郎、金澤裕也、鎌田憲彦、椿健治、阪井淳、高野隆好、美濃卓哉、野口憲路
- Total Pages
  7
- Publisher
  株式会社オプトロニクス社
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Comparative study on noise characteristics of As and Sb-based high electron mobility transistors2017
- Author(s)
  T.Takahashi, S.Hatsushiba, S.Fujikawa, H.I.Fujishiro
- Journal Title
  
  Physica Status Solidi A-Applications and Materials Science
  
  Volume: 214 Issue: 3 Pages: 1600599-1600599
- DOI
  10.1002/pssa.201600599
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16K06316
[Journal Article] アンチモン系トランジスタの開発2017
- Author(s)
  藤代博記、磯野恭佑、高橋択斗、原田義彬、岡直希、竹内淳、藤澤由衣、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 117 Pages: 33-36
- Data Source
  KAKENHI-PROJECT-16K06316
[Journal Article] 化物LED高効率化のためのナノインプリントとドライエッチングによる微細加工制御技術2014
- Author(s)
  鹿嶋行雄、松浦恵里子、嶋谷聡、小久保光典、田代貴晴、大川貴史、上村隆一郎、長田大和、藤川紗千恵、平山秀樹
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 27-32
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes2014
- Author(s)
  H. Hirayama, N. Maeda, S. Fujikawa, S. Toyota and N. Kamata
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 10 Pages: 100209-100209
- DOI
  10.7567/jjap.53.100209
- NAID
  210000144519
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] AlGaN系率紫外LEDの進展2013
- Author(s)
  平山秀樹、藤川紗知恵、鎌田憲彦
- Journal Title
  
  電気学会論文誌C
  
  Volume: Vol. 133 Pages: 1443-1448
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] High-Efficiency AlGaN Deep-UV LEDs fabricated on a-and m-axis oriented c-plane sapphire substrates2012
- Author(s)
  S. Fujikawa, H. Hirayama and N. Maeda
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.9, Issue 3-4 Pages: 790-793
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760017
[Journal Article] High-efficiency AlGaN deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates2012
- Author(s)
  Sachie Fujikawa, Hideki Hirayama, Noritoshi Maeda
- Journal Title
  
  physica status solidi (c)
  
  Volume: 9 Issue: 3-4 Pages: 790-793
- DOI
  10.1002/pssc.201100453
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760017
[Journal Article] Characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate2012
- Author(s)
  N. Maeda, H. Hirayama and S. Fujikawa
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Pages: 810-813
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] High-efficiency AlGaN deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates2012
- Author(s)
  S. Fujikawa, H. Hirayama and N. Maeda
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Pages: 790-793
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] AlGaN深紫外LEDの高効率化への取り組み2012
- Author(s)
  富田優志、藤川紗千恵、水澤克哉、豊田史朗、鎌田憲彦、平山秀樹
- Journal Title
  
  信学技報
  
  Volume: 112 Pages: 87-92
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] 284-300nm Quaternary InAlGaN based Deep Ultraviolet Light-Emitting Diodes on Si (111) Substrates2011
- Author(s)
  S.Fujikawa, H.Hirayama
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Issue: 6 Pages: 061002-061002
- DOI
  10.1143/apex.4.061002
- NAID
  10028999982
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760017
[Journal Article] 応用物理2011
- Author(s)
  平山秀樹、藤川紗千恵、塚田悠介、鎌田憲彦
- Journal Title
  
  AlGaN系深紫外LEDの進展と展望
  
  Volume: 4月号
- Data Source
  KAKENHI-PROJECT-22760017
[Journal Article] m軸およびa軸オフ角C面サファイア基板上のAlN結晶成長の特徴と高出力AlGaN深紫外LEDの作製2011
- Author(s)
  前田哲利,藤川紗千恵,平山秀樹
- Journal Title
  
  信学技報
  
  Volume: vol.111, no.292 Pages: 107-112
- NAID
  10031103582
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760017
[Journal Article] 284-300nm Quaternary InAlGaN based Deep Ultraviolet Light-Emitting Diodes on Si(111) Substrates2011
- Author(s)
  S. Fujikawa, H. Hirayama
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Pages: 61002-61002
- NAID
  10028999982
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760017
[Patent] 発光素子及びその製造方法2011
- Inventor(s)
  藤川紗千恵、平山秀樹、鹿嶋行雄、松浦恵里子、西原浩巳、田代貴晴、大川貴史、尹成圓
- Industrial Property Rights Holder
  藤川紗千恵、平山秀樹、鹿嶋行雄、松浦恵里子、西原浩巳、田代貴晴、大川貴史、尹成圓
- Industrial Property Number
  2011-154276
- Filing Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22760017
[Patent] 発光素子及びその製造方法2011
- Inventor(s)
  平山秀樹、藤川紗千恵、鹿嶋行雄、松浦恵里子、西原浩巳、田代貴晴、大川貴史、尹成圓
- Industrial Property Rights Holder
  平山秀樹、藤川紗千恵、鹿嶋行雄、松浦恵里子、西原浩巳、田代貴晴、大川貴史、尹成圓
- Filing Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Electron Transport Properties of InSb/Ga0.35In0.65Sb Composite Channel Structure2017
- Author(s)
  S. Fujikawa, T. Iwaki, Y. Harada, J.Takeuchi, Y.Endoh, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, and A. Kasamatsu, H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] アンチモン系トランジスタの開発2017
- Author(s)
  藤代博記、磯野恭佑、高橋択斗、原田義彬、岡直希、竹内淳、藤澤由衣、藤川紗千恵、町田龍人、渡邊一世、山下良美、遠藤聡、原紳介、笠松章史
- Organizer
  電子デバイス研究会-ミリ波・テラヘルツ波デバイス・システム-
- Invited
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Monte Carlo Study on Electron Transport Properties of GaxIn1-xSb HEMT Structures Considering Roughness Scattering2017
- Author(s)
  Y. Fujisawa, T. Takahashi, S. Kawamura, S. Fujikawa, and H.I. Fujishiro
- Organizer
  Compound Semiconductor Week 2017 (CSW2017) (14th International Symposium on Compound Simiconductor (ISCS2017) & 29th International Conference on Indium Phosphide and Related Materials (IPRM 2017))
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Electron transport properties of novel InSb/GaInSb composite channel high electron mobility transistor structures2016
- Author(s)
  J. Takeuchi, S. Fujikawa, Y. Harada and H. I. Fujishiro
- Organizer
  35rd Electronic Materials Symposium (EMS35)
- Place of Presentation
  Laforet Biwako, Shiga
- Year and Date
  2016-07-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] InSb-based HEMT with Over 300 GHz-fT using Evaporated SiOx Film2016
- Author(s)
  K. Isono, D. Tsuji, T. Taketsuru, S. Fujikawa, I. Watanabe Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
- Organizer
  International Conference on Indium Phosphide and Related Materials (IPRM) 2016
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Electron Transport Properties of InSb/GaInSb Composite Channel2016
- Author(s)
  S. Fujikawa, J. Takeuchi, Y. Harada, and H. I. Fujishiro
- Organizer
  19th International Conference on Molecular Beam Epitaxy (MBE2016),
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] InSb-based HEMTwith Over 300 GHz-fT using Al0.25In0.75Sb/Al0.15In0.85Sb stepped buffer layer for strain reduction2016
- Author(s)
  S. Fujikawa, K. Isono, Y. Harada, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
- Organizer
  19th International Conference on Molecular Beam Epitaxy (MBE2016)
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Research and development of InP, GaN and InSb-based HEMTs and MMICs for terahertz-wave wireless communications2016
- Author(s)
  I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, I. Hosako,H. Hamada, T. Kosugi, M. Yaita, A. E. Moutaouakil, H. Matsuzaki, O. Kagami,T. Takahashi, Y. Kawano, Y. Nakasha, N. Hara,D. Tsuji, K. Isono, S. Fujikawa, and H. I. Fujishiro
- Organizer
  2016 IEEE Compound Semiconductor IC Symposium
- Place of Presentation
  Doubletree by Hilton, Austin, TX, USA
- Year and Date
  2016-10-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] Comparative Study on Noise Characteristics of As and Sb-based HEMTs2016
- Author(s)
  Takuto Takahashi, Shota Hatsushiba, Sachie Fujikawa, Hiroki I. Fujishiro
- Organizer
  International Conference on Indium Phosphide and Related Materials (IPRM) 2016
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] InSb HEMT with over 300 GHz-fT using stepped buffer layer for strain reduction2016
- Author(s)
  S. Fujikawa, K. Isono, Y. Harada, I. Watanabe, Y. Yamashita, A. Endoh, S. Hara, A. Kasamatsu, and H. I. Fujishiro
- Organizer
  35rd Electronic Materials Symposium (EMS35)
- Place of Presentation
  Laforet Biwako, Shiga
- Year and Date
  2016-07-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06316
[Presentation] GaAs(100)基板上のInSb/GaSb結晶のオフ角依存性2015
- Author(s)
  鈴木浩基、藤川紗千恵、藤代博記
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K05995
[Presentation] DEPENDENCE OF InSb/GaSb FILMS GROWN ON FLAT AND VICINAL GaAs (100) SUBSTRATES2015
- Author(s)
  S. Fujikawa, H. Suzuki, H. I. Fujishiro
- Organizer
  31st NORTH AMERICAN MOLECULAR BEAM EPITAXY CONFRENCE
- Place of Presentation
  MAYAN RIVIERA, MEXICO
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05995
[Presentation] p-AlGaN透明コンタクト層を用いた深紫外LEDの高効率化の実現2013
- Author(s)
  前田哲利、藤川紗千恵、平山秀樹
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木、神奈川
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 結合ピラーAlNバッファーを用いた高効率深紫外LEDの検討2013
- Author(s)
  富田優志、豊田史朗、藤川紗千恵、鎌田憲彦、平山秀樹
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木、神奈川
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LEDバッファー用結合ピラーAlNの結晶成長2013
- Author(s)
  豊田史朗、富田優志、藤川紗千恵、鎌田憲彦、平山秀樹
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木、神奈川
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] AlGaN-based Deep-UV LEDs Fabricated on Connected-Pillar AlN Buffer2013
- Author(s)
  H. Hirayama, Y. Tomita, S. Toyoda, S. Fujikawa and N. Kamata
- Organizer
  The 10th Conference on Lasers and Electro-Optics Pacific Rim, The 18th OptoElectronics and Communications Conference / Photonics in Switching 2013 (CLRO-PR & OECC/PS 2013)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] High-Efficiency AlGaN-based Deep -V LEDs Realized by Improving Injection and Light-Extraction Efficiency2012
- Author(s)
  H. Hirayama, M. Akiba, Y. Tomita, S. Fujikawa and N. Kamata
- Organizer
  13th International Symposium on the Science and Technology of Lighting (LS13)
- Place of Presentation
  Troy, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Improvement of Light Extraction Efficiency of AlGaN Deep-UV LED using 2-Dimensional Photonic Crystal (2D-PhC)2012
- Author(s)
  S. Fujikawa, H. Hirayama, Y. Kashima, H. Nishihara, T. Tashiro, T. Ohkawa, S. W. Youn and H. Takagi
- Organizer
  International Workshop on Nitride Semiconductors (IWN2012)
- Place of Presentation
  東札幌、札幌
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Improvement of Light Extraction Efficiency of AlGaN Deep-UV LED using 2-Dimensional Photonic Crystal (2D-PhC)2012
- Author(s)
  S. Fujikawa, H. Hirayama, Y. Kashima, H. Nishihara, T. Tashiro, T. Ohkawa, S. W. Youn and H. Takagi
- Organizer
  The 4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Progress of Deep-UV LEDs using AlGaN-based semiconductors2012
- Author(s)
  S. Fujikawa, N. Kamata and H. Hirayama
- Organizer
  The 2nd RIKEN-McGill University Scientific Workshop
- Place of Presentation
  和光、埼玉
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] フォトニック結晶を用いたAlGaN系深紫外LEDの高効率化2012
- Author(s)
  藤川紗千恵、平山秀樹、鹿嶋行、西原浩巳、田代貴晴、大川貴史、尹成圓、高木秀樹
- Organizer
  第73回応用物理;学会学術講演会
- Place of Presentation
  松山、愛媛
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] InAlGaN4元混晶からの深紫外高IQEの観測と殺菌波長帯高出力LEDの実現2011
- Author(s)
  藤川紗千恵,平山秀樹
- Organizer
  文部科学省科学研究費補助金特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」
- Place of Presentation
  東京
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Enhancement of Light Extraction Efficiency of Deep UV-LEDs using Photonic Nano-structures2011
- Author(s)
  Sachie Fujikawa
- Organizer
  The 2011 Nano Science Joint Laboratory Form
- Place of Presentation
  理研(埼玉県和光市)
- Year and Date
  2011-11-25
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] 窒化物半導体を用いた深紫外LEDの開発2011
- Author(s)
  藤川紗千恵
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大学(福岡県春日市)(奨励賞受賞講演)
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] AlGaN系高効率深紫外LEDの開発2011
- Author(s)
  藤川紗千恵
- Organizer
  日本学術会議主催公開シンポジウム第2回先端フォトニクスの展望
- Place of Presentation
  日本学術会議講(東京都)
- Year and Date
  2011-10-07
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] High-Efficiency AlGaN Deep-UV LEDs fabricated on a-and m-axis oriented c-plane sapphire substrates2011
- Author(s)
  S. Fujikawa, H. Hirayama, N. Maeda
- Organizer
  9th International Conference on Nitride Semiconductors(ICNS-9)
- Place of Presentation
  Glasgow UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] a軸方向傾斜c面サファイア上に作製した高効率深紫外LED2011
- Author(s)
  藤川紗千恵
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市(神奈川工科大)
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Enhancement of Light Extraction Efficiency of Deep UV-LEDs using Photonic Nano-structures2011
- Author(s)
  S. Fujikawa, H. Hirayama, Y. Kajima
- Organizer
  The 2011 Nano Science Joint Laboratory Form
- Place of Presentation
  RIKEN
- Year and Date
  2011-11-25
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] a軸およびm軸傾斜サファイア基板上に作製した高効率AlGaN深紫外LED2011
- Author(s)
  藤川紗千恵,前田哲利,平山秀樹
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域第4回公開シンポジウム「光・光量子科学技術の新展開」
- Place of Presentation
  日本科学未来館
- Year and Date
  2011-12-02
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] a軸方向傾斜c面サファイア上に作製した高効率深紫外LED2011
- Author(s)
  藤川紗千恵,平山秀樹,前田哲利
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Si基板上InAlGaN系深紫外LEDの進展2011
- Author(s)
  藤川紗千恵,平山秀樹
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域第4回公開シンポジウム「光・光量子科学技術の新展開」
- Place of Presentation
  日本科学未来館
- Year and Date
  2011-12-02
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] a軸およびm軸傾斜サファイア基板上に作製した高効率AlGaN深紫外LED2011
- Author(s)
  藤川紗千恵
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域第4回公開シンポジウム光・光量子科学技術の新展開」
- Place of Presentation
  日本科学未来館(東京都)
- Year and Date
  2011-12-02
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates2011
- Author(s)
  Sachie Fujikawa
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Ise-Shima National Park(三重県鳥羽市)
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] 殺菌への実用を目指したSi基板上深紫外LEDの実現2011
- Author(s)
  藤川紗千恵、平山秀樹
- Organizer
  第12回理研・分子研合同シンポジウムエクストリームフォトニクス研究
- Place of Presentation
  理研
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] 殺菌への実用を目指したSi基板上深紫外LEDの実現2011
- Author(s)
  藤川紗千恵
- Organizer
  第12回理研・分子研合同シンポジウムエクストリームフォトニクス研究
- Place of Presentation
  理研(埼玉県和光市)
- Year and Date
  2011-06-30
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] 窒化物半導体を用いた深紫外LEDの開発2011
- Author(s)
  藤川紗千恵,平山秀樹
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  九州大
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] マイクロステップ制御による深紫外LEDの作製2011
- Author(s)
  藤川紗千恵,平山秀樹,前田哲利
- Organizer
  公益社団法人応用物理学会結晶工学分科会主催2011年・年末講演会
- Place of Presentation
  学習院,東京
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] High-Efficiency AlGaN Deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates2011
- Author(s)
  Sachie Fujikawa
- Organizer
  9th International Conference on Nitride Semicond uctors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] マイクロステップ制御による深紫外LEDの作製2011
- Author(s)
  藤川紗千恵
- Organizer
  2011年応用物理結晶工学分科会
- Place of Presentation
  学習院大(東京都)
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] High-Efficiency AlGaN Deep-UV LEDs fabricated on a-and m-axis oriented c-plane sapphire substrates2011
- Author(s)
  S. Fujikawa, H. Hirayama and N. Maeda
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors(APWS-2011)
- Place of Presentation
  Toba, Mie
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Si基板上InAlGaN系深紫外LEDの進展2011
- Author(s)
  藤川紗千恵
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域第4回公開シンポジウム光・光量子科学技術の新展開」
- Place of Presentation
  日本科学未来館(東京都)
- Year and Date
  2011-12-02
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] InAlGaN4元混晶からの深紫外高IQEの観測と殺菌波長帯高出力LEDの実現2011
- Author(s)
  藤川紗千恵
- Organizer
  文部科学省科学研究費補助金特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」
- Place of Presentation
  東京ガーデンパレス(東京都)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] AlGaN系高効率深紫外LEDの開発2011
- Author(s)
  藤川紗千恵
- Organizer
  日本学術会議主催公開シンポジウム第2回先端フォトニクスの展望
- Place of Presentation
  東京
- Year and Date
  2011-10-07
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] 280nm-band InAlGaN deep-UV LED on Silicon (111) substrate2010
- Author(s)
  Sachie Fujikawa
- Organizer
  Third International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Si基板上280nm帯InAlGaN深紫外LED2010
- Author(s)
  藤川紗千恵,平山秀樹
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] First Achievement of Deep-UV LED on Si substrate2010
- Author(s)
  S. Fujikawa, H. Hirayama
- Organizer
  2010 IEEE International Semiconductor Laser Conference
- Place of Presentation
  Kyoto
- Year and Date
  2010-09-27
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Si基板上280nm帯InAlGaN深紫外LED2010
- Author(s)
  藤川紗千恵
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  宮城県仙台市(東北大)
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] 280nm-band InAlGaN deep-UV LED on Silicon(111) substrate2010
- Author(s)
  S. Fujikawa, H. Hirayama
- Organizer
  Third International Symposium on Growth ofIII-Nitrides(ISGN-3)
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Si基板上280nm帯InAlGaN深紫外LED2010
- Author(s)
  藤川紗千恵
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎県長崎市(長崎大)
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Si基板上280nm帯InAlGaN深紫外LEDの実現2010
- Author(s)
  藤川紗千恵,平山秀樹
- Organizer
  第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」
- Place of Presentation
  三重大
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Realization of InAlGaN-based deep UV LEDs on Si (111) substrates2010
- Author(s)
  Sachie Fujikawa
- Organizer
  International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, U.S.A.
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] InAlGaN4元混晶を用いた280nm帯殺菌用途深紫外LEDの進展2010
- Author(s)
  藤川紗千恵
- Organizer
  「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の進展開第3回公開シンポジウム
- Place of Presentation
  東京(日本科学未来館)
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] InAlGaN4元混晶を用いた高出力深紫外LEDの実現2010
- Author(s)
  藤川紗千恵
- Organizer
  日本学術会議主催公開シンポジウム先端フォトニクスの展望
- Place of Presentation
  東京
- Year and Date
  2010-04-09
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] InAlGaN4元混晶を用いた280nm帯殺菌用途深紫外LEDの進展2010
- Author(s)
  藤川紗千恵,平山秀樹
- Organizer
  新機能創成に向けた光・光量子科学技術,研究領域光・光量子科学技術の進展開第3回公開シンポジウム
- Place of Presentation
  日本科学未来館
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Si基板上280nm帯InAlGaN深紫外LEDの実現2010
- Author(s)
  藤川紗千恵
- Organizer
  第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」
- Place of Presentation
  三重県津市(三重大)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] InAlGaN4元混晶を用いた高出力深紫外LEDの実現2010
- Author(s)
  藤川紗千恵
- Organizer
  日本学術会議主催公開シンポジウム先端フォトニクスの展望
- Place of Presentation
  東京
- Year and Date
  2010-04-09
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Si基板上280nm帯InAlGaN深紫外LED2010
- Author(s)
  藤川紗千恵,平山秀樹
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] Realization of InAlGaN-based deep UV LEDs on Si(111) substrates2010
- Author(s)
  S. Fujikawa, H. Hirayama
- Organizer
  International Workshop on Nitride semiconductors(IWN2010)
- Place of Presentation
  Tampa, Florida, U. S. A.
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-22760017
[Presentation] 光取出し改善による高効率AlGaN深紫外の実現
- Author(s)
  藤川紗千恵、平山秀樹
- Organizer
  第3回先端フォトニクスシンポジウム
- Place of Presentation
  日本学術会議講堂
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] p-AlGaN透明コンタクト層を用いた高効率深紫外LEDの検討
- Author(s)
  前田哲利、藤川紗千恵、水澤克哉、平山秀樹
- Organizer
  先端光科学領域シンポジウム2012
- Place of Presentation
  和光、埼玉
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] フォトニックナノ構造を用いた深紫外LEDの高効率化
- Author(s)
  藤川紗千恵、平山秀樹
- Organizer
  先端光科学領域シンポジウム2012
- Place of Presentation
  和光、埼玉
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 結合ピラーAlNバッファーを用いた高効率深紫外LEDの開拓
- Author(s)
  富田優志、藤川紗千恵、豊田史朗、鎌田憲彦、平山秀樹
- Organizer
  先端光科学領域シンポジウム2012
- Place of Presentation
  和光、埼玉
- Data Source
  KAKENHI-PROJECT-24246010

1. HIRAYAMA Hideki (70270593)

# of Collaborated Projects: 2 results

# of Collaborated Products: 21 results
2. Fujishiro Hiroki (60339132)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
3. 町田龍人 (50806560)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
4. 林宗澤 (40585155)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 王利 (50804035)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

fujikawa sachie 藤川 紗千恵

FUJIKAWA Sachie 藤川 紗千恵

Research Projects

Research Products

Co-Researchers

A Study on realizing unexplored frequency and room temperature operation THz-QCL through innovation of inter-subband transition mechanism

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Development of Ultra-High Performance Sb-Based Teraherts Transistors

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Elucidation of physical properties of Sb-based dilute nitride semiconductor and creation of high brightness far infrared light emitting elementPrincipal Investigator

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Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates

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Development of deep ultraviolet LED and LD on nitride semiconductorPrincipal Investigator

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[Book] 深紫外LED高効率化への新たな進展2014

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[Book] InterLab特集2014

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[Journal Article] Comparative study on noise characteristics of As and Sb-based high electron mobility transistors2017

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DOI

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[Journal Article] アンチモン系トランジスタの開発2017

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[Journal Article] 化物LED高効率化のためのナノインプリントとドライエッチングによる微細加工制御技術2014

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[Journal Article] Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes2014

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DOI

NAID

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[Journal Article] AlGaN系率紫外LEDの進展2013

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[Journal Article] High-Efficiency AlGaN Deep-UV LEDs fabricated on a-and m-axis oriented c-plane sapphire substrates2012

Author(s)

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Data Source

[Journal Article] High-efficiency AlGaN deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate2012

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Journal Title

fujikawa sachie 藤川紗千恵

FUJIKAWA Sachie 藤川紗千恵