ENDOH Tetsuo 遠藤哲郎

… Alternative Names

遠藤哲郎エンドウテツオ

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Researcher Number	00271990
Other IDs
Affiliation (Current)	2025: 東北大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help	2017 – 2018: 東北大学, 工学研究科, 教授 2012: 東北大学, 大学院・工学研究科, 教授 2012: 東北大学, 工学(系)研究科(研究院), 教授 2008 – 2011: Tohoku University, 学際科学国際高等研究センター, 教授 2007: Tohoku University, 電気通信研究所, 准教授 … More 2006: 東北大学, 電気通信研究所, 助教授 1997 – 1999: 東北大学, 電気通信研究所, 助教授 1996: 東北大学, 電気通信研究所, 講師 Less
Review Section/Research Field	Principal Investigator 電子デバイス・機器工学 / Electron device/Electronic equipment / Applied materials science/Crystal engineering Except Principal Investigator Engineering / Science and Engineering / Electronic materials/Electric materials / 電子デバイス・機器工学 / Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Principal Investigator SGT / 3次元MOSトランジスタ / MOSトランジスタ / ナノデバイス / 電子デバイス / 集積回路 / Three dimensional integrated circuit / Three dimensional MOS transistor / MOS transistor / 3次元MOSFET … More / 3次元集積回路 / Mobility / Threshold Voltage / Voltage Current Characteristics / 3-Demensional MOS Transistor / MOS Transistor / 3次元MOSトランジスター / MOSトランジスター / モビリティー / しきい値 / 電圧電流特性 / スピン制御 / ＭＴＪ / 磁気トンネル接合素子 / ＭＴＪ素子 / スピンダイナミクス / ナノエレクトロニクス / 高速電気信号測定 / MTJ素子 / 電子トンネル / スピンダイナミクス / スピン注入伝達式磁気トンネル接合素子 / スピン反転過程 / スピントロニクス / シリコンデバイス / シリコン結晶 / 半導体 / ナノ電子物性科学 / 移動度 / ひずみ / シリコン / 電子輸送 / 電子物性 / 表面科学 / 不純物ドープ / シリコン結晶シリコンデバイス / 半導体デバイス / LSI / CAD / デバイスシミュレーション / 立体構造デバイス / 縦型トランジスタ … More Except Principal Investigator Flash memory / M-SGT / SGT / スピンエレクトロニクス / 人工知能 / スピントロニクス / Structural analysis / Silicon dioxide / 構造解析 / フラッシュメモリ / シリコン酸化膜 / SGT Flash memory / Three-dimensional MOSFET / M-SGTM-SGT / SGT Flashメモリ / Flashメモリ / 3次元MOSFET / 初期酸化過程 / STM測定 / XPS, SR-XPS測定 / UVオゾン処理 / 表面再配列構造 / 酸化歪 / 放射光 / 光電子分光 / Si酸化 / Si(110)面 / 「その場」走査トンネル顕微鏡測定 / リアルタイム光電子分光測定 / 初期酸化 / Si(110) / 炭素ナノチューブ / 量子効果 / MOSトランジスタ / 半導体 / ナノ物性 / 半導体デバイス / 界面 / ナノサイエンス / 新材料 / ナノ界面 / 理論 / 第一原理計算 Less

Spintronics-Based Hardware Paradigm for Artificial Intelligence
- Principal Investigator
  
  大野英男
- Project Period (FY)
  2017 – 2021
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tohoku University
Study for Intermediate States of Spin Flip in Spintronics Devices and its ApplicationsPrincipal Investigator
- Principal Investigator
  
  ENDOH Tetsuo
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystalsPrincipal Investigator
- Principal Investigator
  
  ENDOH Tetsuo
- Project Period (FY)
  2007 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Oxidation kinetics of Si(110) surface and electrical properties of the oxide as a basis for next-generation CMOS devices
- Principal Investigator
  
  SUEMITSU Maki
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
デバイス設計の自由度を向上させる構造を有する縦型トランジスタに関する研究Principal Investigator
- Principal Investigator
  
  遠藤哲郎
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
The Investigation of break down mechanisms in silicon dioxide films by a combination of electrical and structural analysis methods
- Principal Investigator
  
  MASAOKA Fujio
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
Investigation of high performance three-dimensional integrated circuits using three dimensional MOS devicesPrincipal Investigator
- Principal Investigator
  
  ENDOH Tetsuo
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  TOHOKU UNIVERSITY
Investigation of nano meter scale MOS transistors for integrated circuits
- Principal Investigator
  
  MASUOKA Fujio
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  TOHOKU UNIVERSITY
Research of 3 Dimensional (3D) MOSFET's operation mechanism for future LSIPrincipal Investigator
- Principal Investigator
  
  ENDOH Tetsuo
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  TOHOKU UNIVERSITY

All 2018 2017 2013 2011 2010 2009 2008 2007 2006

All Journal Article Presentation Patent

[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Journal Title
  
  Japanese Journal of Applied Physics (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: (未定)(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Enhancing Single-ion Detection Efficiency by Applying a Substrate Bias Voltage for Deterministic Single-ion Doping2011
- Author(s)
  M.Hori, T.Shinada, T.Endoh, et al.
- Journal Title
  
  Applied Physics Express
  
  Volume: (未定)(Accepted)
- NAID
  10028210001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and Performance on its CMOS Inverter2011
- Author(s)
  T.Sasaki, T.Imamoto, T.Endoh
- Journal Title
  
  MICE Transactions on Electronics
  
  Volume: E94-C(印刷中)
- NAID
  110007889996
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Journal Title
  
  Key Engineering Materials
  
  Volume: 470 Pages: 48-53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET2011
- Author(s)
  T.Imamoto, T.Sasaki, T.Endoh
- Journal Title
  
  IEICE Transactions on Electronics
  
  Volume: E94-C(印刷中)
- NAID
  110007889999
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigets, T.Endoh
- Journal Title
  
  AIP Conference Series
  
  Volume: (未定)(印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor2011
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y Shigeta, T.Endoh
- Journal Title
  
  IEICE Transactions on Electronics
  
  Volume: E94-C(印刷中)
- NAID
  10029505917
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Enhancing Single-ion Detection Efficiency by Applying a Substrate Bias Voltage for Deterministic Single-ion Doping2011
- Author(s)
  M.Hori, T.Shinada, K.Taira, A.Komatsubara, T.Tanii, T.Endoh, I.Ohdomari
- Journal Title
  
  Applied Physics Express Vol.4
- NAID
  10028210001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method2010
- Author(s)
  T.Shinada, T.Endoh, et al.
- Journal Title
  
  Proceedings of SPIE 2010
  
  Volume: 7637
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices2010
- Author(s)
  M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta
- Journal Title
  
  Physica E
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010
- Author(s)
  M.Muraguchi, Y.Takada, S.Nomura, T.Endoh, Kenji Shiraishi
- Journal Title
  
  IEICE Transactions on Electronics
  
  Volume: E93-C Pages: 563-568
- NAID
  10026825422
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Importance of the Electronic State on theElectrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010
- Author(s)
  Masakazu Muraguchi, Yukihiro Takada, Shintaro Nomura, Tetsuo Endoh, Kenji Shiraishi
- Journal Title
  
  Physica E 5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article]2010
- Author(s)
  Y. Sakurai, J-I Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys. 45
  
  Pages: 14001-14001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices2010
- Author(s)
  M.Muraguchi, T.Endoh, Y.Takada, Y.Sakurai, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
- Journal Title
  
  Physica E (In Press, 未定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices2010
- Author(s)
  M.Muraguchi, T.Endoh, Y.Takada, Y.Sakurai, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta
- Journal Title
  
  Physica E 42
  
  Pages: 2602-2605
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot2010
- Author(s)
  M.Muraguchi, Y.Takada, S.Nomura, T.Endoh, K.Shiraishi
- Journal Title
  
  IEICE Transacions on Electronics No.5(to be published)
- NAID
  10026825422
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method2010
- Author(s)
  T.Shinada, M.Hori, Y.Ono, K.Taira, A.Komatsubara, T.Tanii, T.Endoh, I.Ohdomari
- Journal Title
  
  Proc.of SPIE 7637
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Performance enhancement of semiconductor devices by control of discrete dopant distribution2009
- Author(s)
  M.Hori, T.Shinada, K.Taira, N.Shimamoto, T.Endoh, I.Ohdomari
- Journal Title
  
  Nanotechnology 20
  
  Pages: 365205-365205
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Performance enhancement of semiconductor devices by control of discrete dopant distribution2009
- Author(s)
  M.Hori, T.Shinada, K.Taira, N.Shimamoto, T.Tanii, T.Endoh, I.Ohdomari
- Journal Title
  
  IOP PUBLISHING Nanotechnology 20
  
  Pages: 365205-365210
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Performance enhancement of semiconductor devices by control of discrete dopant distribution2009
- Author(s)
  M. Hori, T. Shinada, K. Taira, N. Shimamoto, T. Tanii, T. Endoh, I. Ohdomari
- Journal Title
  
  IOP PUBLISHING Nanotechnology Vol. 20、365205
  
  Pages: 1-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Physical origin of stress-induced leakage currents in ultra-thin silicon dioxide films2007
- Author(s)
  T., ・Endoh・K., Hirose・K., Shiraishi
- Journal Title
  
  IEICE TRANSACTIONS ON ELECTRONICS E90C
  
  Pages: 955-961
- NAID
  10018216417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063003
[Journal Article] Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology using a Two-Dimensional Device Simulator2007
- Author(s)
  Tetsuo Endoh, Yuto Monma
- Journal Title
  
  IEICE Trans Electron E90-C
  
  Pages: 1000-1005
- NAID
  110007519666
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Study of Self-Heating in Si Nano Structure for Floating Body-Surround Gate Transistor with High-k Dielectric Films2007
- Author(s)
  Tetsuo Endoh and Kousuke Tanaka
- Journal Title
  
  Japanese Journal of Applied Physics Vol.46, No.5B
  
  Pages: 3189-3192
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18656099
[Journal Article] Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology using a Two-Dimensional Device Simulator2007
- Author(s)
  Tetsuo Endoh and Yuto Monma
- Journal Title
  
  IEICE Trans Electron E90-C
  
  Pages: 1000-1005
- NAID
  110007519666
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films2007
- Author(s)
  Tetsuo Endoh, Kazuyuki Hirose, and Kenji Shiraishi
- Journal Title
  
  IEICE Trans Electron E90-C:
  
  Pages: 955-961
- NAID
  110007519658
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films2007
- Author(s)
  Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi
- Journal Title
  
  IEICE Trans Electron E90-C
  
  Pages: 955-961
- NAID
  110007519658
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films2007
- Author(s)
  T.Endoh, K.Hirose, K.Shiraishi
- Journal Title
  
  IEICE Trans Electron, C E90
  
  Pages: 955-961
- NAID
  110007519658
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology using a Two-Dimensional Device Simulator2007
- Author(s)
  T.Endoh, Y.Monma
- Journal Title
  
  IEICE Trans Electron, C E90
  
  Pages: 1000-1005
- NAID
  110007519666
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206037
[Journal Article] Study of Self-Heating in Si Nano Structure for FB-SGT with High-k Dielectric Films2006
- Author(s)
  Tetsuo Endoh, Kousuke Tanaka
- Journal Title
  
  2006 International Workshop on Dielectric Thin Films for Future ULSI Devices
  
  Pages: 115-116
- Data Source
  KAKENHI-PROJECT-18656099
[Journal Article] Study of Effect of Halo Implantation on Nano-Scale Double Gate MOSFET2006
- Author(s)
  Yuto Momma, Tetsuo Endoh
- Journal Title
  
  International Symposium on Bio- and Nano- Electronics P-37
  
  Pages: 119-120
- Data Source
  KAKENHI-PROJECT-18656099
[Journal Article] Study of 30-nm Double-Gate MOSFET with Halo Implantation Technology2006
- Author(s)
  Yuto Monma, Tetsuo Endoh
- Journal Title
  
  2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices
  
  Pages: 229-232
- NAID
  110004813229
- Data Source
  KAKENHI-PROJECT-18656099
[Patent] 磁気抵抗効果素子、回路装置及び回路ユニット2018
- Inventor(s)
  深見、Kurenkov、Borders、大野、遠藤
- Industrial Property Rights Holder
  東北大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-019686
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-17H06093
[Presentation] Innovative Integrated Systems for IoT/AI2017
- Author(s)
  T. Endoh
- Organizer
  Nanotechnology Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06093
[Presentation] Embedded Nonvolatile Memory with STT-MRAMs and its Application for Nonvolatile Brain-Inspired VLSIs2017
- Author(s)
  T. Endoh
- Organizer
  2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H06093
[Presentation] A Flexible Adaptive Matching Cell Circuit with Bell-Shaped Similarity Evaluation Function for High-Speed LowPower Nonlinear Pattern Recognition Systems2013
- Author(s)
  Yijie Xiong, Yitao Ma, and Tetsuo Endoh
- Organizer
  2013 International Workshop on Nonlinear Circuits, Communications and Signal Processing NCSP'13, pp.624-627
- Place of Presentation
  Isrand of Hawaii, Hawaii, USA
- Year and Date
  2013-03-07
- Data Source
  KAKENHI-PROJECT-23656006
[Presentation] 単一原子ドーピング法と離散的ドーパントデバイス評価2011
- Author(s)
  品田賢宏、遠藤哲郎, 他
- Organizer
  電気学会電子デバイス研究会
- Place of Presentation
  群馬招待講演
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] ドーパント位置制御による電界効果トランジスタの相互コンダクタンス評価2011
- Author(s)
  堀匡寛、品田賢宏、遠藤哲郎, 他
- Organizer
  第58回応用物理学関連連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET2010
- Author(s)
  Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Collective Tunneling Model in Charge Trap Type NVM Cell2010
- Author(s)
  Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Sub-threshold Characteristics of High-k/Metal Gate MOSFET2010
- Author(s)
  Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh
- Organizer
  International Meeting for Future of Electron Devices, Kansai 2010
- Place of Presentation
  大阪
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigets, T.Endoh
- Organizer
  International Conference on the Physics of Semiconductors
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Dependency of Driving Current on Channel Width in High-k/Metal Gate MOSFET2010
- Author(s)
  Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh
- Organizer
  International Meeting for Future of Electron Devices, Kansai 2010
- Place of Presentation
  大阪
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] 基板バイアス印加による単一イオン個数制御性の検証2010
- Author(s)
  堀匡寛、品田賢宏、遠藤哲郎, 他
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter2010
- Author(s)
  Takeshi Sasaki, Takuya Imamoto, Tatsuo Endoh
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter2010
- Author(s)
  T.Sasaki, T.Imamoto, T.Endoh
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Collective Tunneling Model in Charge Trap Type NVM Cell2010
- Author(s)
  M.Muraguchi, Y.Sakurai, Y.Takada, Y.Shigeta, M.Ikeda, K.Makihara, S.Miyazaki, S.Nomura, K.Shiraishi, T.Endoh
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor2010
- Author(s)
  Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Performance evaluation of transistors with discrete dopants by single-ion doping method (Invited)2010
- Author(s)
  T.Shinada, T.Endoh, et al.
- Organizer
  International Conference on the Application of Accelerators in Research and Industry (CAARI2010)
- Place of Presentation
  Fort Worth, USA
- Year and Date
  2010-08-11
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Bias Voltage Sweep Speed Dependence of Electron Injection in Si-Nano-Dots Floating Gate MOS Capacitor2010
- Author(s)
  M.Muraguchi, Y, Sakurai, Y.Takada, S.Nomura, K.Shiraishi, M.Ikeda, K.Makihara, S.Miyazaki, Y.Shigeta, T.Endoh
- Organizer
  International Meeting for Future of Electron Devices, Kansai 2010
- Place of Presentation
  大阪
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Reliable Single Atom Doping and Discrete Dopant Effects on Transistor Performance2010
- Author(s)
  T.Shinada, M.Hori, Y.Ono, K.Taira, A.Komatsubara, T.Tanii, T.Endoh, I.Ohdomari
- Organizer
  International Electron Device Meeting (IEDM)
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Enhancement of electron transport property in FET with asymmetric ordered dopant distribution2010
- Author(s)
  M.Hori, T.Shinada, T.Endoh, et al.
- Organizer
  International Conference on Ion Implantation Technology (IIT)
- Place of Presentation
  京都
- Year and Date
  2010-06-07
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Physics of Nano-contact between Si Quantum Dots and Inversion Layer2009
- Author(s)
  S. Nomura, Y. Sakurai, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, M. Ikeda, K. Makihara, S. Miyazaki
- Organizer
  216th Meeting of Electrochemical Society
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063003
[Presentation] Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism2008
- Author(s)
  Tetsuo Endoh
- Organizer
  2008 Asia-Paci_c Workshop on Funda mentals and Application of Advanced Semiconductor Devices
- Place of Presentation
  北海道札幌市
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-18656099
[Presentation] Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop2008
- Author(s)
  Tetsuo Endoh
- Organizer
  2008 Asia-Pacic Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  北海道札幌市
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] High Performance Multi-Nano-Pillar Type Vertical MOS FET Scaling to 15nm Node2008
- Author(s)
  Tetsuo Endoh
- Organizer
  2008 International Meeting for Future Electron Devices
- Place of Presentation
  大阪府吹田市
- Year and Date
  2008-05-22
- Data Source
  KAKENHI-PROJECT-18656099
[Presentation] Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop2008
- Author(s)
  T.Endoh, M.Kamiyanagi
- Organizer
  2008 Asia-Pacic Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Sapporo
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-19206037
[Presentation] Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor2008
- Author(s)
  Tetsuo Endoh
- Organizer
  2008 Asia-Paci_c Workshop on Funda mentals and Application of Advanced Semiconductor Devices
- Place of Presentation
  北海道札幌市
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-18656099
[Presentation] Analysis of the Dependency of Body Thickness on the Performance of the Nano-Scale Vertical MOSFET2007
- Author(s)
  Yuto Norifusa and Tetsuo Endoh
- Organizer
  IEEE, IMFEDK2007
- Place of Presentation
  大阪
- Year and Date
  2007-04-23
- Data Source
  KAKENHI-PROJECT-18656099
[Presentation] Effects of Threshold Voltage Fluctuations on Stability of MOS Current Mode Logic Inverter Circuit2007
- Author(s)
  K. Suzuki, H. Na, Y. Narita, H. Nakazawa, T. Itoh, K. Yasui, M. Suemitsu and T. Endoh
- Organizer
  IEEE, IMFEDK2007
- Place of Presentation
  大阪
- Year and Date
  2007-04-23
- Data Source
  KAKENHI-PROJECT-19206037

1. MASUOKA Fujio (50270822)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. SAKURABA Hiroshi (60241527)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
3. NAKAYAMA Takashi (70189075)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. SUEMITSU Maki (00134057)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
5. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
6. OSHIYAMA Atsushi (80143361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. MURAGUCHI Masakazu (90386623)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
8. OKADA Susumu (70302388)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. YAMAUCHI Jun (90383984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. BOERO Mauro (40361315)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. NOMURA Shintaro (90271527)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
12. CHIKYOW Toyohiro (10354333)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. YAMADA Keisaku (30386734)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. SHINADA Takahiro (30329099)

# of Collaborated Projects: 1 results

# of Collaborated Products: 13 results
15. TERAOKA Yuden (10343922)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. ASAOKA Hidehito (40370340)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. BERBER Savas (90375402)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 大野英男 (00152215)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 鈴木大輔 (00574675)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 佐藤茂雄 (10282013)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 堀尾喜彦 (60199544)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 深見俊輔 (60704492)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

ENDOH Tetsuo 遠藤 哲郎

遠藤 哲郎 エンドウ テツオ

Research Projects

Research Products

Co-Researchers

Spintronics-Based Hardware Paradigm for Artificial Intelligence

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Study for Intermediate States of Spin Flip in Spintronics Devices and its ApplicationsPrincipal Investigator

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Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystalsPrincipal Investigator

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Oxidation kinetics of Si(110) surface and electrical properties of the oxide as a basis for next-generation CMOS devices

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Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach

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デバイス設計の自由度を向上させる構造を有する縦型トランジスタに関する研究Principal Investigator

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The Investigation of break down mechanisms in silicon dioxide films by a combination of electrical and structural analysis methods

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Investigation of high performance three-dimensional integrated circuits using three dimensional MOS devicesPrincipal Investigator

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Investigation of nano meter scale MOS transistors for integrated circuits

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Research of 3 Dimensional (3D) MOSFET's operation mechanism for future LSIPrincipal Investigator

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[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2011

Author(s)

Journal Title

Data Source

[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2011

Author(s)

Journal Title

Data Source

[Journal Article] Enhancing Single-ion Detection Efficiency by Applying a Substrate Bias Voltage for Deterministic Single-ion Doping2011

Author(s)

Journal Title

NAID

Data Source

[Journal Article] The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and Performance on its CMOS Inverter2011

Author(s)

ENDOH Tetsuo 遠藤哲郎

遠藤哲郎エンドウテツオ