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HASEGAWA Seiichi  長谷川 誠一

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… Alternative Names

長谷川 誠一

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Researcher Number 10019755
External Links
Affiliation (based on the past Project Information) *help 2002: Kanazawa Univ., Professor, 工学部, 教授
1998 – 2001: 金沢大学, 自然科学研究科, 教授
1997: 金沢大学, 工学部, 教授
1993 – 1995: 金沢大学, 工学部, 教授
1988 – 1989: Kanazawa University, Professor., 工学部, 教授
1986: 金沢大学, 工学部, 教授
Review Section/Research Field
Principal Investigator
Applied materials / Electronic materials/Electric materials / Applied materials science/Crystal engineering
Except Principal Investigator
Electronic materials/Electric materials / 電子材料工学 / Applied materials science/Crystal engineering
Keywords
Principal Investigator
CVD / 結合構造 / Thin-film transistor / Doping efficiency / Surface roughness / Preferential orientation / Plasma supply / Polycrystalline Si / 伝導機構 / ドーピング効率 … More / 結晶軸配向 / プラズマ印加効果 / 薄膜トランジスタ / ド-ピング効率 / 表面荒れ / 配向性 / プラズマ印加 / 多結晶Si / Surface Morphology / Uniaxis / Plasma Treatment on Substrates / Etching Effects / Control of Interface / Crystal Structure / Nano-Si / Poly-Si / 薄膜成長中のエッチング効果 / 基板の表面処理 / エッチングガスの添加 / 表面モフォロジー / 一軸配向 / 基板のプラズマ処理 / エッチング効果 / 界面制御 / 結晶構造 / シリコン・ナノ結晶 / 多結晶シリコン / Stress / Vibrational properties / Random bonding model / Charge-transfer model / Bonding Structure / Plasma CVD / Silicon oxide / Silicon nitride / ストレス / 赤外吸収 / ランダム結合モデル / 電荷移動モデル / プラズマCVD / シリコン酸化膜 / シリコン窒化膜 … More
Except Principal Investigator
薄膜 / Light-emitting Material / Plasma CVD / Multilayer / Thin film / Oxide matrix / Si nanocrystal / 発光波長制御 / フォトルミネセンス / 酸化物媒質 / シリコンナノ結晶 / Plasma control / Silicide / Sputtering / スパッタリング / 人工格子 / プラズマ発光分光分析 / プラズマ制御 / 傾斜機能材料 / シリサイド / マグネトロンスパッタ / Photonic Crystal / フォトニック結晶 / Conductivity Control / 垂直光共振器 / 分布ブラッグ反射鏡 / 発光材料 / プラズマCVD / 電気伝導度制御 / 多層構造 / 原子間力顕微鏡 / 結晶成長 / 結晶粒形状 / 表面観察 / 三次元軸配向 / 多結晶シリコン薄膜 Less
  • Research Projects

    (7 results)
  • Co-Researchers

    (6 People)
  •  Optical properties of the photonic crystals based on nano-crystalline-Si-dispersed films as an optically active medium

    • Principal Investigator
      INOKUMA Takao
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kanazawa University
  •  "Electrical and Optical Properties of Nanocrystalline-Si-Dispersed Film with Periodical Modulation of Its Layer Structure"

    • Principal Investigator
      INOKUMA Takao
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kanazawa University
  •  The preparation of high quality polycrystalline Si films at low temperature using PECVD.Principal Investigator

    • Principal Investigator
      HASEGAWA Seiichi
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kanazawa University
  •  三次元軸配向した多結晶シリコン薄膜の開発とその結晶成長メカニズムの解明

    • Principal Investigator
      狄 国慶
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kanazawa University
  •  Analysis of the Local Bonding Structure in Silicon Nitride (Oxide) Films Deposited by Plasma-Enhanced CVD in Terms of a Charge-Transfer ModelPrincipal Investigator

    • Principal Investigator
      HASEGAWA Seiichi
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Kanazawa University
  •  Investigation on the Effect of in situ Plasma Supply During Growth of Polycrystalline Silicon Films by Low-Pressure Chemical Vapor Deposition, and on their Electric Conduction PropertiesPrincipal Investigator

    • Principal Investigator
      HASEGAWA Seiichi
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kanazawa University
  •  Development of new method to control composition ratio of alloy film by low temperature, high rate deposition

    • Principal Investigator
      HATA Tomonobu
    • Project Period (FY)
      1986 – 1988
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      電子材料工学
    • Research Institution
      Kanazawa University
  • 1.  INOKUMA Takao (50221784)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 2.  HATA Tomonobu (50019767)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 3.  HORITA Susumu (60199552)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  狄 国慶 (70242823)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  和佐 清孝
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  WASA Kiyotaka
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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