Yamabe Kikuo 山部紀久夫

… Alternative Names

YAMABE Kikuo 山部紀久夫

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Researcher Number	10272171
Other IDs
External Links
Affiliation (Current)	2025: 筑波大学, 数理物質系, 特令教授
Affiliation (based on the past Project Information) *help	2015: 筑波大学, 数理物質科学研究科, 教授 2011 – 2014: 筑波大学, 数理物質系, 教授 2007 – 2010: University of Tsukuba, 大学院・数理物質科学研究科, 教授 2004 – 2005: 筑波大学, 大学院・数理物質科学研究科, 教授 2001 – 2003: 筑波大学, 物理工学系, 教授
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Science and Engineering Except Principal Investigator Electronic materials/Electric materials / Physical properties of metals / Science and Engineering
Keywords	Principal Investigator 表面 / シリコン / シリコン酸化膜 / 信頼性 / ラフネス / 界面 / 未酸化シリコン / 膜厚高均一性 / マイクロラフネス / 原子的平坦性 … More / Oxygen Deficiency / Silicon Dioxide / Reliability / Charge Trapping / Conduction Mechanism / Gate Dielectrics / Integrated Circuits / High-k Dielectrics / 酸素欠損 / 電荷捕獲 / 伝導機構 / ゲート絶縁膜 / 集積回路 / 高誘電率絶縁膜 / SiO2 / 酸化物 / フェンス / 損傷 / インデンテーション / 三角ピット / エッチング / テラス / バックボンド / 水分 / 自然酸化 / 成長核 / センサー / 有機分子 / 酸化膜 / 金属ナノワイヤ / 二次元分布 / 密度緩和 / 分布 / 密度 / SiC / Si / 均一性 / 平坦性 / 原子テラス / 原子ステップ / 単結晶 / 熱酸化 / バラツキ / 膜厚均一性 / 絶縁破壊 / 極薄シリコン酸化膜 … More Except Principal Investigator SiO2 / 絨毯爆撃状絶縁破壊痕 / 経時酸化膜絶縁破壊 / Hard Breakdown / Soft Breakdown / ＴＤＤＢ / ＭＯＳゲート絶縁膜 / 炭化ケイ素 / 断面TEM観察 / ヘテロ界面 / 発光解析 / 結晶欠陥 / GaN on Si(001) / SiC MOS / 透過型電子顕微鏡 / ヘテロエピタキシャル成長 / 結晶性 / ゲート絶縁膜 / 信頼性物理 / 表面・界面物理解析 / 絶縁破壊機構 / positron annihilation / vacancy-type defect / interface / metal-oxide / 表面・界面 / 陽電子消滅 / 空孔型欠陥 / 界面 / 金属酸化物 / 集積エレクトロニクス / ナノメータ・スケール / トランスポート / 第一原理計算 / ナノテクノロジー / シリコン集積回路 / 理論的アセスメント / 微細化限界 / ナノメータ・スケール素子 Less

Fundamental study of high-performance, low-power transistor by hetero interface formation
- Principal Investigator
  
  NIWA Masaaki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Position- and structure-Control of Atomic Steps on Crystal Surfaces and Its Atom/Molecule ModificationPrincipal Investigator
- Principal Investigator
  
  YAMABE Kikuo
- Project Period (FY)
  2010 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
高精度に制御された極薄シリコン酸化膜を利用した特性バラツキ抑制技術の研究開発Principal Investigator
- Principal Investigator
  
  山部紀久夫
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
極薄シリコン酸化膜の原子的レベルの膜厚高均一・高均質化技術の研究開発Principal Investigator
- Principal Investigator
  
  山部紀久夫
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Study of relationship between oxygen deficiencies and electric characteristics of metal oxides, and improvement of thin film qualityPrincipal Investigator
- Principal Investigator
  
  YAMABE Kikuo
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Study of vacancy-type defects in metal/metal-oxide by means of positron annihilation
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical properties of metals
- Research Institution
  University of Tsukuba
ナノメータ・スケール集積エレクトロニクスの理論的構築
- Principal Investigator
  
  名取研二
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba

[Book] ドライ・ウェットエッチシグ技術全集第2章第5節2008
- Author(s)
  山部紀久夫
- Publisher
  技術情報協会
- Data Source
  KAKENHI-PROJECT-20035002
[Book] IEEE 2005 Int.Reliability Physics Symposium Proceeding2005
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Publisher
  Charge Trapping by Oxygen-Related Defects in HfO2-based High-k Gate Dielectrics
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Book] Electrochem.Soc., Tran.Vol.1, No.1"Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5"2005
- Author(s)
  R.Hasunuma, J.Okamoto, N.Tokuda, K.Yamabe
- Publisher
  Morphological Change in Surface and Interface during Ultrathin SiO_2 Film Growth
- Data Source
  KAKENHI-PROJECT-16360016
[Book] Electrochem. Soc., Tran. Vol.1,No.1 "Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5"2005
- Author(s)
  R.Hasunuma, J.Okamoto, N.Tokuda, K.Yamabe
- Publisher
  Morphological Change in Surface and Interface during Ultrathin SiO_2 Film Growth
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Book] Morphological Change in Surface and Interface during Ultrathin SiO_2 Film Growth, Electrochem.Soc.,Tran., 1(1), Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5
- Author(s)
  R.Hasunuma, J.Okamoto, N.Tokuda, K.Yamabe
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Book] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics, IEEE 2005 Int.Reliability Physics Symposium Proceeding
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode2016
- Author(s)
  Soshi Sato, Kikuo Yamabe, Tetsuo Endoh, Masaaki Niwa
- Journal Title
  
  Materials Science Forum
  
  Volume: 858 Pages: 485-488
- DOI
  10.4028/www.scientific.net/msf.858.485
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26870043, KAKENHI-PROJECT-25289082
[Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 58 Pages: 185-191
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289082
[Journal Article] 極薄シリコン酸化膜における原子レベルの膜厚均一性と信頼性2015
- Author(s)
  山部紀久夫、蓮沼隆
- Journal Title
  
  J.Vac.Soc.Jpn.
  
  Volume: 58 Pages: 27-27
- NAID
  130004952534
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors2014
- Author(s)
  Soshi Sato1, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 8S1 Pages: 08LA01-08LA01
- DOI
  10.7567/jjap.53.08la01
- NAID
  210000144325
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors2014
- Author(s)
  Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53
- NAID
  210000144325
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25289082
[Journal Article] Oxidation characteristics of silicon exposed to O(1D2) and O(3P2) radicals and stress-relaxation oxidation model for O(1D2) radicals2014
- Author(s)
  Yoshiro Kabe, Ryu Hasunuma, and Kikuo Yamabe
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Pages: 031501-031501
- NAID
  210000143412
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Nanoindentation Damage near Silicon Surface Embossed by Immersion in Ultralow-Dissolved-OxygenWater2013
- Author(s)
  Ryu Hasunuma, Shun Kudo, Katsuya Kamata, and Kikuo Yamabe
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 2 Issue: 5 Pages: 225-229
- DOI
  10.1149/2.014305jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Microscopic Thickness Uniformity and Time-Dependent Dielectric Breakdown Lifetime Dispersion of Thermally Grown Ultrathin SiO2 Film on Atomically Flat Si Surface2013
- Author(s)
  Ryu Hasunuma, Yusuke Hayashi, Masahiro Ota, and Kikuo Yamabe
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 3R Pages: 31301-31301
- DOI
  10.7567/jjap.52.031301
- NAID
  210000141859
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching2013
- Author(s)
  Ryu Hasunuma and Kikuo Yamabe
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 11R Pages: 11027-11027
- DOI
  10.7567/jjap.52.110127
- NAID
  210000143047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Oxidation of Silicon Utilizing a Microwave Plasma System : Electric-Stress Hardening of SiO2 Films by Controlling the Surface and Interface Roughness2012
- Author(s)
  Yoshiro Kabe, Ryu Hasunuma, Kikuo Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 51 Pages: 41104-41104
- NAID
  210000140407
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Two-dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)2012
- Author(s)
  R.Hasunuma, T.Fukasawa,R.Kosugi, Y.Ishida, and K.Yamabe
- Journal Title
  
  Materials Science Forum
  
  Volume: 717～720 Pages: 785-788
- DOI
  10.4028/www.scientific.net/msf.717-720.785
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Variation of Chemical Vapor Deposited SiO2 Density Due to Generation and Shrinkage of Open Space During Thermal Annealing2012
- Author(s)
  M.Sometani, R.Hasunuma, M.Ogino, H.Kuribayashi, Y.Sugahara, A.Uedono, K.Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 51 Issue: 2R Pages: 21101-21101
- DOI
  10.1143/jjap.51.021101
- NAID
  210000071732
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Generation and Growth of Atomic-scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface2011
- Author(s)
  Y.Hayashi, R.Hasunuma, K.Yamabe
- Journal Title
  
  Key Engineering Materials
  
  Volume: 470 Pages: 110-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Tokuda N, Umezawa H, Yamabe K, Okushi H, Yamasaki S ; Growth of atomically step-free surface on diamond {111} mesas2010
- Author(s)
  Tokuda N, Umezawa H, Yamabe K, Okushi H, Yamasaki S
- Journal Title
  
  DIAMOND AND RELATED MATERIALS
  
  Volume: 1 Pages: 288-290
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360015
[Journal Article] Degradation of Atomic Surface Flatness of SiO2 Thermally Grown on a Si Terrace2009
- Author(s)
  K.Yamabe, K.Ohsawa, Y.Hayashi, R.Hasunuma
- Journal Title
  
  Journal of Electrochemical Society 156
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035002
[Journal Article] Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing2009
- Author(s)
  Mitsuru Sometani, Ryu Hasunuma, Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara, Kikuo Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys 48
- NAID
  210000066788
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035002
[Journal Article] Roughness Increase on Surface and Interface of SiO2 Grown on Atomically Flat Si(111)Terrace2009
- Author(s)
  K.Ohsawa, Y.Hayashi, R.Hasunuma, K.Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- NAID
  210000066787
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035002
[Journal Article] シリコン酸化膜フェンス効果を利用した原子ステップの形状・速度制御2009
- Author(s)
  鎌田勝也、尾崎亮太、矢田隆伸、蓮沼隆、山部紀久夫
- Journal Title
  
  表面科学 30
  
  Pages: 422-426
- NAID
  10025201140
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035002
[Journal Article] Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature2009
- Author(s)
  R.Takeda, M.Narita, S.Tani-ike, K.Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys 48
  
  Pages: 51201-51201
- NAID
  40016585491
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035002
[Journal Article] Comprehensive analysis of positive and negative bias temperature instabilities.in high-k/metal gate stack metal-oxide-silicon field effect transistors with equivalent oxide thickness scaling to sub-1 nm2008
- Author(s)
  M. Sato, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, C. Tamura, R. Hasunuma, S. Inumiy a, T. Aoyama, Y. Nara, Y. Ohi I
- Journal Title
  
  Jpn. J. ADD 1. Phys 47
  
  Pages: 2354-2359
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035002
[Journal Article] Evaluation of Two-Dimensional Distribution of Dielectric Degradation in Stressed Si02 Film by Etch-Rate Difference2008
- Author(s)
  S. Okamoto, Y. Tokukawa, R. Hasunuma, M. Ogino, H. Kuribayashi, Y. Sugahara and K. Yamabe
- Journal Title
  
  Journal of Physics : Conference Series 106
  
  Pages: 12017-12017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035002
[Journal Article] Surface roughening of diamond(001)films during homoepitaxial growth in heavy horon doping2007
- Author(s)
  Norio Tokuda, Hitoshi Umezawa, Takeyasu Saito, Kikuo Yamabe, Hideyo Okushi and Satoshi Yamasaki
- Journal Title
  
  Diamond and Related Materials 16
  
  Pages: 767-770
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Annealing properties of open volumes in strained SiN films studied by monoenergetic positron beams2007
- Author(s)
  A.Uedono, K.Ito, T.Narumi, M.Sometani, K.Yamabe, Y.Miyagawa, T. Murata, K. Honda, N. Hattori, M. Matsuura, K. Asai, T. Ohdaira and R. Suzuki
- Journal Title
  
  J.Appl.Phys. 102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Characterization of metal/high・k structures using monoenergetic positronbeams2007
- Author(s)
  A.Uedono, T.Naito, T.Otsuka, K.Ito, K.Shiraishi, K.Yamabe, S.Miyazaki, H.Watanabe, N.Umezawa, Y.Chikyow, T.Ohdaira, R.Suzuki, Y.Akasaka, S.Kamiyama, Y.Nara and K.Yamada
- Journal Title
  
  Jpn.JAppl.Phy6 46
  
  Pages: 3214-3218
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Direct observation of two-dimensional growth at SiO2/Si(III) interface2007
- Author(s)
  D.Hojo, N.Tokuda and K.Yamabe
- Journal Title
  
  Thin Solid Films 515
  
  Pages: 7892-7898
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structres2007
- Author(s)
  K.Ohmori, P.Ahmet, M.Yoshitake, T.Chikyow, K.Shiraishi, K.Yamabe, H.Watanabe, Y.Akasaka, Y.Nara, K.-S.Chang, M.L.Green, and K.Yamada
- Journal Title
  
  J.Appl.Phys. 101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Hillock-free heavily Broron-deped homoepitaxial diamond films2007
- Author(s)
  N.Tokuda, H.Umezawa, K.Yamabe, H.Okushi and S.Yamasaki
- Journal Title
  
  Jpn.J.Appl.Phys. 46
  
  Pages: 1469-1470
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Origin of the Hole Current in n-type High-k/Metal Gate Stacks Field Effect Transistor in and Inversion State2007
- Author(s)
  Motoyuki Sato, Kikuo Yamabe, Takayuki Aoyama, Yasuo Nara, and Yuzuru Ohji
- Journal Title
  
  Jpn.J.Appl.Phys 46
- NAID
  40015715174
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Role of nitrogen atoms in reduction of electron charge traps in Hf-based High-k dielectrics2007
- Author(s)
  N.Umezawa, K.Shiraichi, K.Torii, M.Boero, T.Chikyow, H.watanabe, K.Yamabe, T.Ohno, K.Yamada and Y.Nara
- Journal Title
  
  IEEE electron device lett 28
  
  Pages: 363-365
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] ダイヤモンド(III)表面の原子的平坦化2007
- Author(s)
  徳田規夫, 李成奇, 梅澤仁, 山部紀久夫, 大串秀世, 山崎聡
- Journal Title
  
  ニューダイヤモンド 23
  
  Pages: 30-31
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Homogeneity improvements in the dielectric characteristics of HfSiON films by nitridation2007
- Author(s)
  T.Naito, C.Tamura, S.Inumiya, R.Hasunuma, K.Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys 46
  
  Pages: 3197-3201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Microscopic Understanding of PBTI and NBTI Mechanisms in High-k/Metal Gate Stacks2007
- Author(s)
  Motoyuki Sato, Kikuo Yamabe, Kenji Shiraishi, Seiichi Miyazaki, Keisaku Yamada, Chihiro Tamura, Ryu Hasunuma, Seiji Inumiya, Takayuki Aoyama, Yasuo Nara, and Yuzuru Ohji
- Journal Title
  
  ECS Trans. 11
  
  Pages: 615-627
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON2007
- Author(s)
  N.Umezawa, K.Shiraishi, S.Miyazaki, A.Uedono, Y.Akasaka, S.Inumiya, R.Hasunuma, K.Yamabe, H.Momida, T.Ohno, K.Ohmori, T.Chikyow, Y.Nara, and K.Yamada
- Journal Title
  
  Jpn.J.Appl.Phys. 46
  
  Pages: 1891-1894
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026002
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Appl.Phys.Lett. 86
  
  Pages: 143507-143507
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Unique behavior of Fcenters in high-k Hf-based oxides2006
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, M.Boero, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, Y.Nara
- Journal Title
  
  Physica B 376-377
  
  Pages: 392-394
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Impact of nitridation on open volumes in HfSiO_x studied using monoenergetic positron beams2006
- Author(s)
  A.Uedono, K.Ikeuchi, T.Otsuka, K.Yamabe, K.Eguchi, M.Takayanagi, T.Odaira, M.Marumatsu, R.Suzuki, A.S.Hamid, T.Chikyow
- Journal Title
  
  Appl. Phys. Lett. 88
  
  Pages: 171912-171912
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Impact of nitridation on open volumes in HfSiO_x studied using monoenergetic positron beams2006
- Author(s)
  A.Uedono, K.Ikeuchi, T.Otsuka, K.Yamabe, K.Eguchi, M.Takayanagi, T.Odaira, M.Marumatsu, R.Suzuki, A.S.Hamid, T.Chikyow
- Journal Title
  
  Appl.Phys.Lett. 88
  
  Pages: 171912-171912
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.yamabe
- Journal Title
  
  J.Appl.Phys. 97
  
  Pages: 33508-33508
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.Yamabe
- Journal Title
  
  Journal of Applied Physics 97
  
  Pages: 33508-33508
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Transient Characteristics of HfAlOx Gate Dielectric Films2005
- Author(s)
  M.Goto, K.Higuchi, K.Torii, R.Hasunuma, K.Yamabe
- Journal Title
  
  Trans.Mater.Res.Soc. 30(1)
  
  Pages: 201-205
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] First-principles studies of the intrinsic effect of nitrogen atoms on reduciton in gate leakage current through Hf-based high-k dielectrics2005
- Author(s)
  N.Umezawa, K.Shiraishi, T.Ohno, H.Watanabe, T.Chikyow, K.Torii, K.Yamabe, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Appl.Phys.Lett. 86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Selective Growth of Ag Nanowires on Si(111) Surfaces by Electroless Deposition2005
- Author(s)
  N.Tokuda, N.Sasaki, H.Watanabe, K.Miki, S.Yamasaki, R.Hasunuma, K.Yamabe
- Journal Title
  
  J.Phys.Chem.(B), Letters 109
  
  Pages: 12655-12657
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Transient Characteristics of HfAlOx gate Dielectric Films2005
- Author(s)
  M.Goto, K.Higuchi, K.Torii, R.Hasunuma, K.Yamabe
- Journal Title
  
  Trans.Mat.Res.Soc.Jpn 30
  
  Pages: 201-204
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen water2005
- Author(s)
  N.Tokuda, M.Nishizawa, K.Miki, S.Yamasaki, R.Hasunuma, K.Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys. 44
- NAID
  10015726643
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics2005
- Author(s)
  K.Yamabe et al.
- Journal Title
  
  IEEE 2005 Int.Reliability Physics Symposium Proceeding
  
  Pages: 648-649
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] Annealing properties of open volumes in HfSiOx arid HfAlOx gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono, K.Ikeuchi, K.Yamabe, T.Ohdaira, M.Muramatsu, R.Suzuki, A.S.Hamid, T.Chikyow, K.Torii, K.Yamada
- Journal Title
  
  J.Appl.Phys. 98
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Suppression of oxygen diffusion by thin Al_2O_3 films grown on SrTiO_3 studied using a monoenergetic positron beam2005
- Author(s)
  A.Uedono, M.Kiyohara, N.Yasui, K.Yamabe
- Journal Title
  
  J.Appl.Phys. 97
  
  Pages: 33508-33508
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Selective Growth of Ag Nano-wires on Si(111) Surfaces by Electroless Deposition2005
- Author(s)
  N.Tokuda, N.Sasaki, H.Watanabe, K.Miki, S.Yamasaki, R.Hasunuma, K.Yamabe
- Journal Title
  
  J.Phys.Chem.(B), Letters 109
  
  Pages: 12655-12657
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Selective Growth of Ag Nanowires on Si(111) Surfaces by Electroless Deposition2005
- Author(s)
  N.Tokuda, N.Sasaki, H.Watanabe, K.Miki, S.Yamasaki, R.Hasunuma, K.Yamabe
- Journal Title
  
  J.Phys.Chem. (B), Letters 109
  
  Pages: 12655-12657
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] The Role of Oxygen-related Defects on the Reliabilities of HfO_2-based High-k Gate Insulators2005
- Author(s)
  K.Torii, K.Shiraishi, S.Miyazaki, K.Yamabe, M.Boero, T.Chikyow, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Trans.Mater.Res.Soc. 30(1)
  
  Pages: 191-195
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams2005
- Author(s)
  A.Uedono, K.Ikeuchi, K.Yamabe, T.Ohdaira, M.Muramatsu, R.Suzuki, A.S.Hamid, T.Chikyow, K.Torii, K.Yamada
- Journal Title
  
  J.Appl.Phys. 98
  
  Pages: 23506-23506
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Transient Characteristics of HfAlOx Gate Dielectric Films2005
- Author(s)
  M.Goto, K.Higuchi, K.Torii, R.Hasunuma, K.Yamabe
- Journal Title
  
  Transactions of Mat.Res.Soc. 30[1]
  
  Pages: 201-205
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Selective Growth of Mono-atomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen water2005
- Author(s)
  N.Tokuda, M.Nishizawa, K.Miki, S.Yamasaki, R.Hasunuma, K.Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys. 44
- NAID
  10015726643
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics2005
- Author(s)
  K.Yamabe et al.
- Journal Title
  
  IEEE 2005 Int. Reliability Physics Symposium Proceeding
  
  Pages: 648-649
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560574
[Journal Article] The Role of Oxygen-related Defects on the Reliabi-lities of HfO_2-based High-k Gate Insulators2005
- Author(s)
  K.Torii, K.Shiraishi, S.Miyazaki, K.Yamabe, M.Boero, T.Chikyow, K.Yamada, H.Kitajima, T.Arikado
- Journal Title
  
  Trans.Mater.Res.Soc. 30(1)
  
  Pages: 191-195
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen water2005
- Author(s)
  N.Tokuda, M.Nishizawa, K.Miki, S.Yamasaki, R.Hasunuma, K.Yamabe
- Journal Title
  
  Japanese Journal of Applied Physics 44
- NAID
  10015726643
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
- Journal Title
  
  Jpn.J.Appl.Phys. 43(11B)
  
  Pages: 7848-7852
- NAID
  130004531545
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics2004
- Author(s)
  M.Goto, K.Higuchi, K.Torii, R.Hasunuma, K.Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys. 43(11B)
  
  Pages: 7826-7830
- NAID
  10014215019
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Nonuniformity in Ultrathin SiO_2 on Si(111) Character-ized by Conductive Atomic Force Microscopy2004
- Author(s)
  R.Hasunuma, J.Okamoto, N.Tokuda, K.Yamabe
- Journal Title
  
  Jpn.J.Appl.Phys. 43(11B)
  
  Pages: 7861-7865
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy2004
- Author(s)
  R.Hasunuma, J.Okamoto, N.Tokuda, K.Yamabe
- Journal Title
  
  Japanese Journal of Applied Physics 43(11B)
- NAID
  10014215146
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterization of HfO.3A1O.70x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, R.Mitsuhashi, A.Horiuchi, K.Torii, T.Arikado, R.Suzuki, T.Ohdaira, K.Yamada
- Journal Title
  
  Japanese Journal of Applied Physics 43(11B)
  
  Pages: 7848-7852
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics2004
- Author(s)
  M.Goto, K.Higuchi, K.Torii, R.Hasunuma, K.Yamabe;
- Journal Title
  
  Japanese Journal of Applied Physics 43(11B)
  
  Pages: 7826-7830
- NAID
  10014215019
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Vacancy-Type Defects in SrTiO_3 Probed by a Monoenergetic Positron Beam2004
- Author(s)
  A.Uedono, M.Kiyohara, K.Shimoyama, Y.Matsunaga, N.Yasui, K.Yamabe
- Journal Title
  
  Materials Sci.Forum 445-446
  
  Pages: 201-203
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Characterization of Hf_<0.3>Al_<0.7>O_x Fabricated by Atomic-Layer Deposition Technique Using Monoenergetic Positron Beams2004
- Author(s)
  A.Uedono, M.Goto, K.Higuchi, K.Shiraishi, K.Yamabe, H.Kitajima, et al.
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7848-7848
- NAID
  10014215085
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Transient Capacitance in Metal-Oxide-Semiconductor Structure with Stacked Gate Dielectrics2004
- Author(s)
  M.Goto, K.Higuchi, K.Torii, R.Hasunuma, K.Yamabe
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7826-7826
- NAID
  10014215019
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Morphological Change in Surface and Interface during Ultrathin SiO_2 Film Growth
- Author(s)
  R.Hasunuma, J.Okamoto, N.Tokuda, K.Yamabe
- Journal Title
  
  Electrochem.Soc.,Tran., 1(1), Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5" 1(1)
  
  Pages: 255-265
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Journal Article] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics
- Author(s)
  K.Yamabe, M.Goto, K.Higuchi, A.Uedono, K.Shiraishi, S.Miyazaki, K.Torii, M.Boero, T.Chikyow, S.Yamasaki, H.Kitajima, K.Yamada, T.Arikado
- Journal Title
  
  IEEE 2005 Int.Reliability Physics Symposium Proceeding
  
  Pages: 648-649
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360016
[Patent] 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム2009
- Inventor(s)
  壁義郎、北川淳一、山部紀久夫
- Industrial Property Rights Holder
  東京エレクトロン/筑波大学
- Industrial Property Number
  2009-011027
- Filing Date
  2009-01-21
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] A shottky barrier between SiC epitaxial layer and Al-C-Si alloy formed by dielectric breakdown of SiC MOS capacitor with aluminum electrode2016
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Organizer
  23 rd International Symposium on the the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Manira Bay Sands, Singapore
- Year and Date
  2016-07-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Poly-Si電極を用いたSiC MOSキャパシタの絶縁破壊後に見出した特徴的な破壊箇所2016
- Author(s)
  佐藤創志、山部紀久夫、遠藤哲郎、丹羽正昭
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第21回研究会)
- Place of Presentation
  東レ研修センター　三島(静岡)
- Year and Date
  2016-01-21
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Effect of series resistance on dielectric breakdown phenomenon of silicon carbide MOS capacitor2015
- Author(s)
  S. Sato, Y. Hiroi, K. Yamabe, M. Kitabatake, T. Endoh, M. Niwa
- Organizer
  22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
- Place of Presentation
  Lakeshore Hotel, Hsinchu (Republic of China)
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Failure analysis of SiC MOS capacitor with poly-Si gate electrode2015
- Author(s)
  S. Sato, K. Yamabe, T. Endoh, M. Niwa
- Organizer
  16th International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  Giardini Naxos (Italy)
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC熱酸化膜MOSキャパシタの絶縁破壊痕表面における炭素の挙動2014
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第61回春季応用物理学会学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] SiC熱酸化膜MOS構造における特徴的な絶縁破壊痕の解析とモデル化2014
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  応用物理学会　薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会　─材料・プロセス・評価の物理─」（第19回研究会）
- Place of Presentation
  ニューウェルシティー湯河原
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Si(111)表面の自然酸化形態2013
- Author(s)
  土井修平蓮沼隆山部紀久夫
- Organizer
  第18回「ゲートスタック研究会－材料・プロセス・評価の物理－」
- Place of Presentation
  ニューウェルシティー湯河原(熱海)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] SiO2 膜中における捕獲電荷のデトラップ評価2013
- Author(s)
  滝ヶ浦佑介，蓮沼隆, 山部紀久夫
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 酸化・還元アニールによる多結晶HfO2 膜の電気的特性変化2013
- Author(s)
  門馬久典，蓮沼隆，山部紀久夫
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 酸化アニールによる多結晶HfO2 の同一箇所2 次元リーク電流分布変化2013
- Author(s)
  下田恭平1、蓮沼隆1、山部紀久夫1, 右田真
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 熱酸化SiC MOSキャパシタの絶縁破壊痕の形状評価2013
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] HfO2膜の結晶化による電気的特性変化2013
- Author(s)
  Hisanori Momma, Yuta Miyamoto, Ryu Hasunuma, and Kikuo Yamabe
- Organizer
  第18回「ゲートスタック研究会－材料・プロセス・評価の物理－」
- Place of Presentation
  ニューウェルシティー湯河原(熱海)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 熱酸化における大気中へのシリコン放出2013
- Author(s)
  T.Nagasawa, R.Hasunuma, K.Yamabe
- Organizer
  第18回「ゲートスタック研究会－材料・プロセス・評価の物理－」
- Place of Presentation
  ニューウェルシティー湯河原(熱海)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Si(111)表面の自然酸化の原子論的形態に関する考察2013
- Author(s)
  土井修平、蓮沼隆、山部紀久夫
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Carpet-Bombing-like Concaves on SiC MOS Capacitors Formed by Dielectric Breakdown2013
- Author(s)
  Soshi Sato, Yuki Hiroi, Kikuo Yamabe, Makoto Kitabatake, Tetsuo Endoh, and Masaaki Niwa
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY
- Place of Presentation
  University of Tsukuba, Tokyo Campus
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Si(111) 表面の自然酸化形態に関する考察2012
- Author(s)
  土井修平、蓮沼隆、山部紀久夫
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] NF3 添加酸化によるSiC 基板起因容量-電圧特性劣化の低減2012
- Author(s)
  蓮沼隆,　深澤辰哉,　山部紀久夫
- Organizer
  SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  大阪市中央公会堂
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] HfO2膜中の結晶/アモルファス界面近傍欠陥とリーク電流2012
- Author(s)
  蓮沼隆, 宮本雄太, 下田恭平, 上殿明良, 山部紀久夫
- Organizer
  第17回「ゲートスタック研究会-材料・プロセス・評価の物理-」
- Place of Presentation
  東レ研修センター(三島市)
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 熱酸化における大気中へのシリコン放出2012
- Author(s)
  長澤達彦、蓮沼隆、山部紀久夫
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] ホットキャリアによるシリコン空乏層とMOS特性の劣化2012
- Author(s)
  長澤達彦、蓮沼隆、山部紀久夫
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(新宿区)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 熱酸化に伴うSiO2/4H-SiC(0001)表面および界面ラフネス増加2012
- Author(s)
  深澤辰哉, 小杉亮治, 石田夕起, 蓮沼隆, 山部紀久夫
- Organizer
  第17回「ゲートスタック研究会-材料・プロセス・評価の物理-」
- Place of Presentation
  東レ研修センター(三島市)
- Year and Date
  2012-01-20
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 高温下でのSiO2膜の劣化評価2012
- Author(s)
  滝ヶ浦佑介，蓮沼隆, 山部紀久夫
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] HfO2膜の結晶化による電気的特性変化2012
- Author(s)
  門馬久典、宮本雄太、蓮沼隆、山部紀久夫
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 多結晶HfO2膜におけるリーク電流の温度依存性2012
- Author(s)
  宮本雄太、蓮沼隆、山部紀久夫
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(新宿区)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 陽極酸化法を用いた電界集中を誘起する構造制御2012
- Author(s)
  宮本雄太，土井修平，蓮沼隆，山部紀久夫
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Silicon Atomistic Steps Formation in Predetermined Positions by Combination between Ultralight-Indentation and Immersion in Ultralow Dissolved-Oxygen Water2011
- Author(s)
  S.Kudo, R.Hasunuma, K.Yamabe
- Organizer
  The 6th International Symposium on Surface Science
- Place of Presentation
  船堀(東京)
- Year and Date
  2011-12-12
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] ナノインデンテーション法を用いたSi(111)表面の原子ステップ制御2011
- Author(s)
  工藤駿、鎌田勝也、蓮沼隆、山部紀久夫
- Organizer
  アトミック/ポリスケールテクノロジー連携研究会
- Place of Presentation
  東京理科大学長万部キャンパス(北海道)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 高温下ストレス印加後のSiO2膜中捕獲電荷2011
- Author(s)
  山下貴之, 蓮沼隆, 山部紀久夫
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 極薄シリコン熱酸化膜の膜厚均一性と表面・界面形状相関2011
- Author(s)
  太田雅浩, 蓮沼隆, 山部紀久夫
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] ナノインデンテーション法を用いたSi(111)表面の原子ステップ制御2011
- Author(s)
  工藤駿, 蓮沼隆, 山部紀久夫
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Two-dimensional Roughness Growth at Surface and Interface of SiO2 Films during Thermal Oxidation of 4H-SiC(0001)2011
- Author(s)
  R.Hasunuma, T.Fukasawa, R.Kosugi, Y.Ishida, K.Yamabe
- Organizer
  2011 Int.Conf.Silicon Carbide and Related Materials
- Place of Presentation
  アメリカ(クリーブランド)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 極薄SiO2膜のラフネスがMosの信頼性へ与える影響2011
- Author(s)
  林優介,染谷満, 蓮沼隆, 山部紀久夫
- Organizer
  第16回「ゲートスタック研究会-材料・プロセス・評価の物理-」
- Place of Presentation
  東京工業大学
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 低温化による極薄シリコン熱酸化膜表面および界面のラフネス成長2011
- Author(s)
  太田雅浩、林優介、蓮沼隆、山部紀久夫
- Organizer
  アトミック/ポリスケールテクノロジー連携研究会
- Place of Presentation
  東京理科大学長万部キャンパス(北海道)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] quartz表面における原子ステップ/テラス構造の形成2010
- Author(s)
  杉井俊介, 蓮沼隆, 山部紀久夫
- Organizer
  第30回表面科学学術講演会
- Place of Presentation
  大阪大学コンベンションセンター
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 熱処理によるCVD-SiO2の緻密化と圧縮応力緩和2009
- Author(s)
  染谷満, 佐藤慎九郎, 荻野正明, 栗林均, 須ヶ原紀之, 上殿明良, 蓮沼隆, 山部紀久夫
- Organizer
  薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] IHfSiON膜への高電界ストレスの痕跡2009
- Author(s)
  野村豪, 杉村聡太郎, 林倫弘, 村上雄一, 田村知大, 佐藤基之, 蓮沼隆, 山部紀久夫
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学筑波キャンパスつくば市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] HfSiON膜表面で観察される絶縁破壊の痕跡2009
- Author(s)
  林倫弘、田村知大, 佐藤基之, 蓮沼隆, 山部紀久夫
- Organizer
  薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  東レ総合研修センター静岡県三島市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 高温熱処理によるCVD-SiO2膜におけるリーク電流の抑制2009
- Author(s)
  染谷満、蓮沼隆、荻野正明、栗林均、須ヶ原紀之、山部紀久夫
- Organizer
  SiC及び関連ワイドギャップ半導体研究会第18回講演会
- Place of Presentation
  神戸
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Effects of Thermal Annealing on CVD-SiO2 Films2009
- Author(s)
  M.Sometani, S.Sato, M.Ogino, H.Kuribayashi, Y.Sugahara, A.Uedono, R.Hasunuma, K.Yamabe
- Organizer
  The Third International Symposium on Atomic Technology(ISAT-3)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Si(111)熱酸化膜表面・界面のラフネス成長2009
- Author(s)
  林優介、清水哲夫、蓮沼隆、山部紀久夫
- Organizer
  薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Long TDDB lifetime of SiO2 film by Controlling Degradation Rate and SiO2/Si Micro-roughness2009
- Author(s)
  Y.Kabe, J.Kitagawa, Y.Hirota, S.Sato, M.Sometani, R.Hasunuma, K.Yamabe
- Organizer
  216th Electrochem.Soc., Fall Meeting
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Si (111) 熱酸化膜表面・界面のラフネス成長2009
- Author(s)
  林優介, 大沢敬一朗, 清水哲夫, 蓮沼隆, 山部紀久夫
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学筑波キャンパスつくば市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 2-D Roughening of SiO2 Thermally Grown on Atomically Flat Si surface2009
- Author(s)
  K.Yamabe, K.Ohsawa, Y.Hayashi, R.Hasunuma
- Organizer
  215th Electrochem.Soc., Spring Meeting
- Place of Presentation
  SanFrancisco, USA
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] ラジカル酸化と熱酸化によるSio2薄膜の膜質制御2009
- Author(s)
  呂〓、佐藤慎九郎, 蓮沼隆山部紀久夫
- Organizer
  薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  東レ総合研修センター静岡具三島市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Reversible and Irreversible Degradation Attributing to Oxygen Vacancy in HfSiON Gate Films during Electrical Stress Application", p.131-134 2009)2009
- Author(s)
  R.Hasunuma, C.Tamura, T.Nomura, Y.Kikuchi, K.Ohmori, M.Sato, A.Uedono, T.Chikyow, K.Shiraishi, K.Yamada, K.Yamabe
- Organizer
  Int.Electron Device Meeting 2009
- Place of Presentation
  Baltimore, USA
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] "Roughness Increase on Surface and Interface of SiO2 Grown on Atomically Flat Si(111)Terrace", The Third International Symposium on Atomic Technology(ISAT-3), (Tokyo, May 5-6,2009)2009
- Author(s)
  K.Ohsawa, Y.Hayashi, R.Hasunuma, K.Yamabe
- Organizer
  The Third International Symposium on Atomic Technology(ISAT-3)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Reliability Control of Silicon Dioxide Films by Radical and Thermal Oxidation2009
- Author(s)
  Z.Lu, S.Sato, R.Hasunuma, K.Yamabe
- Organizer
  The Third International Symposium on Atomic Technology(ISAT-3)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] High Reliable Silicon Dioxide Formation Technique with Plasma and Thermal Oxidation2009
- Author(s)
  Y.Kabe, J.Kitagawa, Y.Hirota, S.Sato, Z.Lu, M.Sometani, R.Hasunuma, K.Yamabe
- Organizer
  Int.Solid State Devices Materals(SSDM2009)
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Characterization of Threshold Voltage Shift by Negative Bias Temperature Stress in HfSiOx Films2009
- Author(s)
  C.Tamura, T.Hayashi, K.Ohmori, R.Hasunuma, K.Yamabe
- Organizer
  215th Electrochem.Soc., Spring Meeting
- Place of Presentation
  SanFrancisco, USA
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 高電界ストレス下におけるシリコン酸化膜の劣化の二次元分布観察2009
- Author(s)
  佐藤慎九郎, 呂〓, 蓮沼隆, 山部紀久夫
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学筑波キャンパスつくば市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 熱処理による電界印加HfSiON膜のダメージ回復における窒素添加効果2009
- Author(s)
  菊地裕樹, 田村知大, 林倫弘, 大毛利健治, 蓮沼隆, 山部紀久夫
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学筑波キャンパスつくば市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 原子的平坦Si(111)表面に形成した熱酸化膜のラフネス2009
- Author(s)
  大沢敬一朗、林優介, 蓮沼隆, 山部紀久夫
- Organizer
  薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  東レ総合研修センター静岡県三島市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Suppression of Leakage Current of TEOS-SiO2 with Bandgap Increasing by High Temperature Annealing2009
- Author(s)
  M.Sometani, R.Hasunuma,. M.Ogino, H.Kuribayashi, Y.Sugahara, K.Yamabe
- Organizer
  215th Electrochem.Soc., Spring Meeting
- Place of Presentation
  SanFrancisco, USA
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 表面・界面ラフネス低減による高信頼性極薄シリコン酸化膜2009
- Author(s)
  佐藤慎九郎, 染谷満, 壁義郎, 北川淳一, 廣田良浩, 蓮沼隆, 山部紀久夫
- Organizer
  薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] HfSiOxのしきい値電圧蠣劣化に対するPDA効果2008
- Author(s)
  田村知大・林倫弘・村田晃一・佐藤基之・蓮沼隆・山部紀久夫
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] EBICによるpMOSのリーク虚挙動の比較2008
- Author(s)
  陳君・関口隆史・高瀬雅美・深田直樹・知京豐裕・蓮沼隆・山部紀久夫・佐藤基之・奈良安雄・山田啓作
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] Vestiges of multiple progressive dielectric breakdown on HfSiON surfaces2008
- Author(s)
  T. Hayashi, C. Tamura, M. Sato, R. H asunuma and K. Yamabe
- Organizer
  2008 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology(IWDTF-08), The Japan Society of Applied Physics
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Effect of Annealing on Electronic Characteristics of HfSiON Films Fabricated by Damascene Gate Process2008
- Author(s)
  K. Yamabe, K. Murata, T. Hayashi, T. Tamura, M. Sato, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, H. Watanabe, Y. Nara, Y. Ohj i, S. Miyazaki, K. Yamada and R. Hasunuma
- Organizer
  214th Meeting of ECS - The Electrochemical Societ
- Place of Presentation
  Honolulu, Hawaii
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 原子的平坦シリコン表面の熱酸化膜のラフネス変化2008
- Author(s)
  大沢敬一朗, 林優介, 木暮洋輔, 荒木浩司, 磯貝宏道, 竹田隆二, 松下嘉明, 蓮沼隆, 山部紀久夫
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県春日井市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 窒素添加がHfSiOxのNBTIに与える影響2008
- Author(s)
  田村知大・林倫弘・村田晃一・犬宮誠治・佐藤基之・蓮沼隆・山部紀久夫
- Organizer
  応用物理学会薄膜・表面物理分科会/シリゴン下王石ジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] Micro roughness of silicon dioxide thermally grown on atomically flatsilicon (111) terrace2008
- Author(s)
  K. Ohsawa, Y. Hayashi, R. Hasunuma and K Yamabe
- Organizer
  2008 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology(1WDTF-08), The Japan Society of Applied Physics
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 超低溶存酸素純水中における原子ステップフロー制御2008
- Author(s)
  鎌田勝也, 尾崎亮太, 蓮沼隆, 山部紀久夫
- Organizer
  アトミック/ポリスケールテクノロジー連携研究会
- Place of Presentation
  東京理科大学・長万部キャンパス
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] ラジカル酸化膜の絶縁破壊特性2008
- Author(s)
  岡本真一・蓮沼隆・山部紀久夫
- Organizer
  応用物理学会薄膜・表面物理分科会/シリゴン下王石ジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 絶縁材料HfO2薄膜中微結晶粒近傍の導電性の二次元分布評価2008
- Author(s)
  野村豪, 染谷満, 田村知大, 蓮沼隆, 山部紀久夫
- Organizer
  アトミック/ポリスケールテクノロジー連携研究会
- Place of Presentation
  東京理科大学・長万部キャンパス
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 極薄シリコン酸化膜の均(1)…Si (111)表面に形成した熱酸化膜の凹凸2008
- Author(s)
  蓮沼隆12・大沢敬一朗1・木暮洋輔1・増山浩平・岡本純一・山部紀久夫
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] シリコン酸化膜高信頼化の過去、現在、未来 (50分)(招待講演)2008
- Author(s)
  山部紀久夫
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  2008年秋季第69回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] 極薄シリコン酸化膜の均(2)…Si (111)表面に形成した熱酸化膜の凹凸2008
- Author(s)
  大沢敬一朗1・木暮洋輔1・荒木浩司2・磯貝宏道2・竹田隆二12・松下嘉明2・蓮沼隆13・山部紀久夫
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] HfO2のマイクロ結晶形成による薄膜の電気伝導変化観察2008
- Author(s)
  野村豪1・染谷満1・杉村聡太郎1・蓮沼隆12・山部紀久夫
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] Influence of Hole Trapping on Threshold Voltage Shift in HfSiOx Films2008
- Author(s)
  C. Tamura, T. Hayashi, K. Ohmori, R. Hasunuma and K. Yamabe
- Organizer
  2008 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technolog y(IINDTFAR) The Tanan Snripfxr of Annlied Phvsir.s
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] TiN/HfSiONにおける電子伝導に寄与する欠陥準位の同定2008
- Author(s)
  村田晃一・田村知大・林倫弘・佐藤基之・蓮沼隆・山部紀久夫
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] ゲート電極形成後の熱処理によるHfSiON膜への影響2008
- Author(s)
  村田晃一・田村知大・林倫弘・佐藤基之・蓮沼隆・山部紀久夫
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 極薄シリコン酸化膜の均(3)…シリコン単結晶表面のステップ/テラス構造制御2008
- Author(s)
  山部紀久夫・荒木浩司3・磯貝宏道3・・竹田隆二13・松下嘉明3・大沢敬一朗1・木暮洋輔1・蓮沼隆
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] HfSiON膜の電気的特性へ与える高温PNA処理の影響2008
- Author(s)
  林倫弘・田村知大・中村源志・赤坂泰志・蓮沼隆・山部紀久夫
- Organizer
  応用物理学会薄膜・表面物理分科会/シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] ラジカル酸化と熱酸化によるシリコン酸化膜の膜質制御2008
- Author(s)
  呂〓, 佐藤慎九郎, 蓮沼隆, 山部紀久夫
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県春日井市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] HfSiON膜の電気的特性に見られるその影響2008
- Author(s)
  蓮沼隆・田村知大・林倫弘・佐藤基之・山部紀久夫
- Organizer
  応用物理学会薄膜・表面物理分科会/シリゴン下王石ジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 空間電荷の移動によるイットリア安定化ジルコニア単結晶の導電性変化2008
- Author(s)
  染谷満1・杉村聡太郎1・蓮沼隆12・山部紀久夫
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 高電界ストレス下でのシリコン酸化膜の劣化速度2008
- Author(s)
  Zhao, Lu・岡本真一・徳河唯・蓮沼隆・山部紀久夫
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 熱酸化によるSi (111) ステップテラス構造のモフォロジー変化2008
- Author(s)
  大沢敬一朗, 林優介, 蓮沼隆, 山部紀久夫
- Organizer
  アトミック/ポリスケールテクノロジー連携研究会
- Place of Presentation
  東京理科大学・長万部キャンパス
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] High-k膜表面に観察される高電解ストレス印加時の電流ステップの痕跡2008
- Author(s)
  林倫弘、田村知大、菊地裕樹、佐藤基之、蓮沼隆、山部紀久夫
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県春日井市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] HfSiON/TaSiゲートスタックnMOs反転側ゲートリーク電流機構と破壊特性に関する考察2008
- Author(s)
  佐藤基之・鬼沢岳・青山敬幸・奈良安雄・山部紀久夫
- Organizer
  応用物理学会薄膜・表面物理分科会/シリゴン下王石ジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] HfSiON膜の低温域リーク電流2008
- Author(s)
  林倫弘1・田村知大1・村田晃一1・犬宮誠治3・蓮沼隆12・山部紀久夫
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 熱混酸による原子的平坦ダイヤモンド(111)表面のラフニング.2008
- Author(s)
  徳田規夫1・竹内大輔1・梅沢仁1・山部紀久夫2・大串秀世13.・山崎聡
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] PDA温度がHfSiOxの電気的特性経時劣化へ与える影響2008
- Author(s)
  田村知大, 林倫弘, 大毛利健治, 蓮沼隆, 山部紀久夫
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県春日井市
- Data Source
  KAKENHI-PROJECT-20035002
[Presentation] Evaluation of Two-Dimensional Distribution of Dielectric Degradation Using Difference in Etching Rate of Stressed SiO22007
- Author(s)
  Shinichi, Okamoto・Y., Ttokukawa・R., Hasunuma・K., Yamabe・M., Ogino・H., Kuribayashi and Y., Sugahara
- Organizer
  The Second International Symposium on Atomic echnology (ISAT-2)
- Place of Presentation
  Awaji
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] HfSiON膜の電気的特性へ与える高温PNA処理の影響2007
- Author(s)
  林倫弘・田村知大・中村源志・赤坂泰・蓮沼隆・山部紀久夫
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 酸素引き抜きによるTi/Al2O3界面平坦性の劣化観察2007
- Author(s)
  杉村聡太郎・染谷満・蓮沼隆・上殿明良・山部紀久夫
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 熱処理によるしきい値電圧の経時劣化抑制効果2007
- Author(s)
  田村知大・林倫弘・佐藤基之・蓮沼隆・山部紀久夫
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] Dielectric characteristics of SiO2 formed by radical oxygen2007
- Author(s)
  S., Okamoto・R., Hasunuma and K., Yamabe
- Organizer
  18th International Symposium on Methodologies for Intelligent Systems
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] Native oxidation from atomic steps on Si 山部,紀久夫 surface2007
- Author(s)
  Keiichiro, Ohsawa・Ryu, Hasunuma and Kikuo., Yamabe
- Organizer
  The Second International Symposium on Atomic echnology (ISAT-2)
- Place of Presentation
  Awaji
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] The effect of infiltration on atomic step flow2007
- Author(s)
  K., Kamata・R., Ozaki・R., Hasunuma and K., Yamabe
- Organizer
  17th International Symposium on Methodologies for Intelligent Systems
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] Comprehensive Understanding of PBTI and NBTI reliability of High-k/Metal Gate Stacks with EOT Scaling to sub-Inm2007
- Author(s)
  Motoyuki, Sato・Kikuo, Yamabe・kenji, Shiraishi・Seiichi, Miyazaki・Keisaku, Yamada・Chihiro Tamura・Ryu, Hasunuma・Siji, Inumiya・Takayuki, Aoyama・Yasuo, Nara and Tuzuru, Ohiji
- Organizer
  Int. Conf. SSDM
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] HfSiOxの闘値変動に対する窒素添加効果2007
- Author(s)
  田村知大・内藤達也・佐藤基之・犬宮誠治・蓮沼隆・山部紀久夫
- Organizer
  第93回研究集会表面・界面・シリコン材料研究委員会
- Place of Presentation
  広島大学
- Year and Date
  2007-09-14
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] Atomica flat diamond (111) surface formation by homoepitaxial lateral growth2007
- Author(s)
  Norio, Tokuda・Hitoshi Umezawa・Sung, Gi Ri・Masahiko, Ogura・Kikuo, Yamabe・Hideyo, Okushi and Satoshi, Yamasaki.
- Organizer
  18th European Conf. Diamond, Diamond-Like Mat erials Carbon Nanotubes, and Nitrides
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 単色陽電子ビームによる金属ゲート形成により絶縁膜へ導入された欠陥の検出2007
- Author(s)
  鳴海貴允・上殿明良・染谷満・杉村聡太郎・山部紀久夫・松木武雄・渡辺俊成・三浦崇義・栄森貴尚・山田啓作
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] ラジカル酸化膜の絶縁破壊特性2007
- Author(s)
  岡本真一・蓮沼隆・山部紀久夫
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] Systematic studies on Fermi level pining of Hf-based high-k gate stacks2007
- Author(s)
  K., Shiraishi・Y., Akasaka・G., Nakamura・M., Kadoshima・H., Watanabe・K., Yamabe・Y., Nara・Y., Ohji and K., Yamada.
- Organizer
  Int. Conf. SSDM
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-19026002
[Presentation] 高温下ストレスによりSiO2膜中に生じた欠陥の回復
- Author(s)
  滝ヶ浦佑介，蓮沼隆, 山部紀久夫
- Organizer
  第19回「ゲートスタック研究会－材料・プロセス・評価の物理－」
- Place of Presentation
  ニューウェルシティー湯河原(静岡)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 酸化・還元アニールによる多結晶HfO2膜の相変態と電気的特性変化
- Author(s)
  門馬久典, 蓮沼隆，山部紀久夫
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学(京都)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 極薄多結晶HfO2膜における結晶粒界と酸素空孔欠陥がリーク電流にもたらす影響
- Author(s)
  戸村　有佑、蓮沼　隆、山部　紀久夫, 右田　真司
- Organizer
  第19回「ゲートスタック研究会－材料・プロセス・評価の物理－」
- Place of Presentation
  ニューウェルシティー湯河原(静岡)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] シリコン表面の酸化膜密度とエッチングレートの相関性評価
- Author(s)
  土井修平、蓮沼隆、山部紀久夫
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学(京都)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] SiC熱酸化膜の密度緩和
- Author(s)
  Masahito Nagoshi,Mariko Hayashi,R. Hasunuma,and K. Yamabe
- Organizer
  先進パワー半導体分科会チュートリアルおよび第1回講演会
- Place of Presentation
  ウィンチあいち、名古屋
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] SiC MOSキャパシタのTZDB測定時動画撮影による絨毯爆撃状破壊痕形成メカニズムの解明
- Author(s)
  佐藤創志、廣井佑紀、山部紀久夫、北畠真、遠藤哲郎、丹羽正昭
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学　湘南キャンパス(神奈川県　平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289082
[Presentation] Nanoindentation and Step Control on Si(111) Surfaces
- Author(s)
  Ryu Hasunuma and Kikuo Yamabe
- Organizer
  12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば国際会議場（茨城
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] ストレスによりSiO2膜中に生じた欠陥の回復
- Author(s)
  滝ヶ浦佑介，蓮沼隆, 山部紀久夫
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学(京都)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] SiC熱酸化膜の深さ方向密度分布
- Author(s)
  林真理子、蓮沼隆、山部紀久夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] HfO2多結晶厚膜の絶縁特性
- Author(s)
  林　真理子,　門馬　久典,　蓮沼　隆,　山部　紀久夫
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学(京都)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Microscopic Thickness Uniformity and Dielectric Breakdown Lifetime of Ultrathin SiO2 Films Thermally Grown on Si(111)
- Author(s)
  Ryu Hasunuma and Kikuo Yamabe
- Organizer
  12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば国際会議場（茨城)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] NF3 Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation
- Author(s)
  Ryu Hasunuma, Masahito Nagoshi, and Kikuo Yamabe
- Organizer
  2013 The International Conference on Silicon Carbide and Related Materials
- Place of Presentation
  フェニックスシーガイアリゾート（宮崎）
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Interrelationship between Leakage Current and Grain Boundaries of Polycrystalline HfO2 Films Directly-Bonded to Si Substrate
- Author(s)
  Hisanori Momma, Yusuke Tomura, Ryu Hasunuma, Kikuo Yamabe
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
- Place of Presentation
  筑波大学(東京キャンパス)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] 微小電極面積を有する極薄多結晶HfO2膜の電気的特性
- Author(s)
  戸村有佑、蓮沼隆、山部紀久夫, 右田真司
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学(京都)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] SiC熱酸化膜の深さ方向密度分布
- Author(s)
  林真理子, 蓮沼隆, 山部紀久夫
- Organizer
  第20回ゲートスタック研究会
- Place of Presentation
  東レ研修センター、三島
- Year and Date
  2015-01-26 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] シリコン酸化膜の密度分布が電気的特性に及ぼす影響
- Author(s)
  土井修平、蓮沼隆、山部紀久夫
- Organizer
  第19回「ゲートスタック研究会－材料・プロセス・評価の物理－」
- Place of Presentation
  ニューウェルシティー湯河原(静岡)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Morphological Analysis on Native Oxidation of Si(111) Surface
- Author(s)
  Syuhei Doi, Ryu Hasunuma, K. Yamabe
- Organizer
  12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば国際会議場（茨城)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] NF3添加酸化におけるSiO2/SiC(0001)界面の安定化
- Author(s)
  名越政仁、蓮沼隆、山部紀久夫
- Organizer
  第19回「ゲートスタック研究会－材料・プロセス・評価の物理－」
- Place of Presentation
  ニューウェルシティー湯河原(静岡)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Ti被着により酸素引き抜きを行った多結晶HfO2膜の電気的特性
- Author(s)
  門馬久典，蓮沼隆，山部紀久夫
- Organizer
  第19回「ゲートスタック研究会－材料・プロセス・評価の物理－」
- Place of Presentation
  ニューウェルシティー湯河原(静岡)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] Si Emission to Atmosphere during Thermal Oxidation of Si Substrates
- Author(s)
  Ryu Hasunuma and Kikuo Yamabe
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
- Place of Presentation
  筑波大学(東京キャンパス)
- Data Source
  KAKENHI-PROJECT-22360015
[Presentation] SiC上に堆積したTEOS-SiO2膜の電気的特性
- Author(s)
  前田貫太, 蓮沼隆, 山部紀久夫
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学、札幌
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-22360015

1. HASUNUMA Ryu (90372341)

# of Collaborated Projects: 5 results

# of Collaborated Products: 137 results
2. UEDONO Akira (20213374)

# of Collaborated Projects: 2 results

# of Collaborated Products: 14 results
3. NIWA Masaaki (90608936)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
4. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SATO Soshi (80649749)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
6. 名取研二 (20241789)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 中村淳 (50277836)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 佐野伸行 (90282334)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Yamabe Kikuo 山部 紀久夫

YAMABE Kikuo 山部 紀久夫

Research Projects

Research Products

Co-Researchers

Fundamental study of high-performance, low-power transistor by hetero interface formation

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Position- and structure-Control of Atomic Steps on Crystal Surfaces and Its Atom/Molecule ModificationPrincipal Investigator

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高精度に制御された極薄シリコン酸化膜を利用した特性バラツキ抑制技術の研究開発Principal Investigator

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極薄シリコン酸化膜の原子的レベルの膜厚高均一・高均質化技術の研究開発Principal Investigator

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Study of relationship between oxygen deficiencies and electric characteristics of metal oxides, and improvement of thin film qualityPrincipal Investigator

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Study of vacancy-type defects in metal/metal-oxide by means of positron annihilation

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ナノメータ・スケール集積エレクトロニクスの理論的構築

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[Book] ドライ・ウェットエッチシグ技術全集第2章第5節2008

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[Book] IEEE 2005 Int.Reliability Physics Symposium Proceeding2005

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Description

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[Book] Electrochem.Soc., Tran.Vol.1, No.1"Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5"2005

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[Book] Electrochem. Soc., Tran. Vol.1,No.1 "Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5"2005

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[Book] Morphological Change in Surface and Interface during Ultrathin SiO_2 Film Growth, Electrochem.Soc.,Tran., 1(1), Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface-5

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Description

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[Book] Charge Trapping by Oxygen-Related Defects in HfO_2-based High-k Gate Dielectrics, IEEE 2005 Int.Reliability Physics Symposium Proceeding

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[Journal Article] Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode2016

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[Journal Article] Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor2016

Author(s)

Yamabe Kikuo 山部紀久夫

YAMABE Kikuo 山部紀久夫