SUNAMI Hideo 角南英夫

Researcher Number	10311804
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2000 – 2006: 広島大学, ナノデバイス・システム研究センター, 教授 2004: 国立大学法人広島大学, ナノデバイス・システム研究センター, 教授
Review Section/Research Field	Principal Investigator 電子デバイス・機器工学 / Electron device/Electronic equipment / Science and Engineering Except Principal Investigator Science and Engineering
Keywords	Principal Investigator SOI / CMOS / TMAH / ITO / 透明電極 / 自由電子赤外光吸収 / ハンプ電流 / 自己整合 / 増速酸化 / 多結晶シリコン埋め込み … More / フィールド・シールド / ビームチャネル / silicon nitride / high breakdown voltage / radiation hardness / gas insulation / insulated gate / field-effect transistor / 熱リン酸 / シリコン窒化膜 / 高耐圧 / 耐放射線 / 気体絶縁 / 絶縁ゲート / 電界効果トランジスタ / Optical waveguide / Infrared light absorption / Free carrier / Comb-shaped transistor / Optical modulator / 赤外吸収 / 光導波路 / 赤外光吸収 / 自由電子 / 櫛形トランジスタ / 光モジュレータ / Transparent electrode / Comb-shaped beam transistor / Infra-red light absorption by free carriers / Optical switch / 消光比 / 結晶方位依存異方性エッチング / 櫛形MOSトランジスタ / 自由電子吸収 / モノリシック光配線 / 櫛形ビームトランジスタ / 光スイッチ / Self-aligning / Enhanced oxidation / Polysilicon fill / Field shield / Beam channel / 側壁ドーピング / プラズマドーピング / 不純物濃度依存酸化 / 局所酸化法 / 鞍型ゲート / 漏洩電流 / 電界集中 / 素子分離構造 / 鞍型トランジスタ / フィールドシールド / アスペクト比 / 異方性エッチング / 側壁トランジスタ … More Except Principal Investigator 異種材料 / 半導体プロセス / チップ搭載チップ / 異分野融合 / モバイル端末 / ヒューマン・インターフェース・デバイス / 超高速・低消費 / 超機能グローバル / 多機能化 / ヘルスケアチップ / 半導体 / インターフェース / 微細加工 / システム / 超機能化 / シリコン / 集積回路 / インテグレーション Less

Study in Metal-Gas-Semiconductor Field-Effect Transistor with High Radiation HardnessPrincipal Investigator
- Principal Investigator
  
  SUNAMI Hideo
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  HIROSHIMA UNIVERSITY
Study on Silicon Optical Modulator on InsulatorPrincipal Investigator
- Principal Investigator
  
  SUNAMI Hideo
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  HIROSHIMA UNIVERSITY
超高速・超微細・低消費電力ビームチャネル型CMOSトランジスタの開発Principal Investigator
- Principal Investigator
  
  角南英夫
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hiroshima University
超機能化グローバル・インターフェース・インテグレーション研究
- Principal Investigator
  
  堀池靖浩
- Project Period (FY)
  2000 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  National Institute for Materials Science
  The University of Tokyo
Conduction Control in Ultra-High Density Beam-Channel CMOS TransistorPrincipal Investigator
- Principal Investigator
  
  SUNAMI Hideo
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Hiroshima University
Fundamental Study on Silicon Optical Switch for Total-Silicon Opto-Electric Integrated CircuitsPrincipal Investigator
- Principal Investigator
  
  SUNAMI Hideo
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  HIROSHIMA UNIVERSITY

All 2007 2006 2005 2004 2003 Other

All Journal Article Book Patent

[Book] VLSI工学-製造プロセス編-2006
- Author(s)
  角南英夫
- Total Pages
  186
- Publisher
  コロナ社
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560309
[Book] VLSI工学:製造プロセス編2006
- Author(s)
  角南英夫
- Total Pages
  210
- Publisher
  電子情報通信学会
- Data Source
  KAKENHI-PROJECT-17560309
[Book] VSLI工学:製造プロセス編2006
- Author(s)
  角南英夫
- Total Pages
  210
- Publisher
  電子情報通信学会
- Data Source
  KAKENHI-PROJECT-17560309
[Book] VLSI工学 : 製造プロセス編2006
- Author(s)
  角南英夫
- Total Pages
  210
- Publisher
  電子情報通信学会
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] Subthreshold-Characteristics Control of Narrow- channel SOI nMOS transistor Utilized Additional Side Gate Electrodes2007
- Author(s)
  K.Okuyama, K.Yoshikawa, H.Sunami
- Journal Title
  
  Jpn. J. Appl. Phys. 46(in press)
- Data Source
  KAKENHI-PROJECT-17560309
[Journal Article] Anomalous Whisker Generation in Ni-Silicided Source and Drain for Three-Dimensional Beam-Channel MOS Transistor on SOI Substrate2007
- Author(s)
  Shunpei Matsumura, Atsushi Sugimura, Kiyoshi Okuyama, Hideo Sunami
- Journal Title
  
  Proc. ADMETA (in press)
- Data Source
  KAKENHI-PROJECT-17560309
[Journal Article] Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors2006
- Author(s)
  T.Tabei, K.Maeda, S.Yokoyama, H.Sunami
- Journal Title
  
  Jpn.J.Appl.Phys., April issue (in press)
- NAID
  10022541844
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors2006
- Author(s)
  H.Sunami S.Matsumura, K.Yoshikawa, K.Okuyama
- Journal Title
  
  Microelectronic Engineering 2006 issue(in press)
- NAID
  120000882661
- Data Source
  KAKENHI-PROJECT-17560309
[Journal Article] Fabrication of Spin-Coated Optical Waveguides for Optically Interconnected LSI and Influence of Fabrication Process on Underlying Metal-Oxide-Semiconductor Capacitors2006
- Author(s)
  T.Tabei, K.Maeda, S.Yokoyama, H.Sunami
- Journal Title
  
  Jpn. J. Appl. Phys. 45
  
  Pages: 3498-3503
- NAID
  210000060322
- Data Source
  KAKENHI-PROJECT-17560309
[Journal Article] High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors2006
- Author(s)
  H.Sunami, S.Matsumura, K.Yoshikawa, K.Okuyama
- Journal Title
  
  Microelectronic Engineering 83
  
  Pages: 1740-1744
- NAID
  120000882661
- Data Source
  KAKENHI-PROJECT-17560309
[Journal Article] High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors2006
- Author(s)
  H.Sunami S.Matsumura, K.Yoshikawa, K.Okuyama
- Journal Title
  
  Microelectronic Engineering (in press)
- NAID
  120000882661
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation2005
- Author(s)
  K.Kobayashi, T.Eto, K.Okuyama, K.Shibahara, H.Sunami
- Journal Title
  
  Jpn.J.Appl.Phys. 43
  
  Pages: 2273-2278
- NAID
  10015703895
- Data Source
  KAKENHI-PROJECT-17560309
[Journal Article] High-Aspect-Ratio Structure Formation Techniques for Three-Dimensional Metal-Oxide-Semiconductor Transistors2005
- Author(s)
  H.Sunami, K.Okuyama
- Journal Title
  
  Abs.of 31^<st> Internat.Conf.on Micro-Nano-Engineering No.11 B_03
- NAID
  120000882661
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation2005
- Author(s)
  K.Kobayashi, T.Eto, K.Okuyama, K.Shibahara, H.Sunami
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.44
  
  Pages: 2273-2278
- NAID
  10015703895
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors2005
- Author(s)
  T.Tabei, K.Maeda, S.Yokoyama, H.Sunami
- Journal Title
  
  Ext.Abs.of International Symp.on Solid State Devices and Materials
  
  Pages: 332-333
- NAID
  10022541844
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] Integrated Power Transistor Application of Three-Dimensional Sidewall-Channel MOS Transistor (invited)2004
- Author(s)
  H.Sunami
- Journal Title
  
  Proc.the 7th International Conference on Solid-State and Integrated-Circuit Technology A7.3
  
  Pages: 336-339
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] A Three-Dimensional MOS Transistor Formation Technique with Crystallographic Orientation-Dependent TMAH Etchant2004
- Author(s)
  H.Sunami, T.Furukawa, T.Masuda
- Journal Title
  
  SENSORS and ACTUATORS A : PHYSICAL A111
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] An Experimental Analysis of 1.55-mm Infrared Light Propagation in Integrated SOI Structure2004
- Author(s)
  M.Kawai, K.Endo, T.Tabei, H.Sunami
- Journal Title
  
  Ext.Abs.of International Symp.on Solid State Devices and Materials
  
  Pages: 556-557
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] Integrated Power Transistor Application of Three-Dimensional Sidewall-Channel MOS Transistor2004
- Author(s)
  H.Sunami, K.Kobayashi, S.Matsumura
- Journal Title
  
  Proc.the 7th Internat.Conf.on Solid-State and Integrated-Circuit Technology (ICSICT) (invited)
  
  Pages: 336-339
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation2004
- Author(s)
  A.Katakami, K.Kobayashi, H.Sunami
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.43
  
  Pages: 2145-2150
- NAID
  10012949618
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] A Three-Dimensional MOS Transistor Formation Technique with Crystallographic Orientation-Dependent TMAH Etchant2004
- Author(s)
  H.Sunami
- Journal Title
  
  SENSORS and ACTUATORS A : PHYSICAL A111
  
  Pages: 310-316
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors Extended2004
- Author(s)
  K.Kobayashi, T.Eto, K.Okuyama, K.Shibahara, H.Sunami
- Journal Title
  
  Ext.Abs.of International Symp.on Solid State Devices and Materials
  
  Pages: 208-209
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation2003
- Author(s)
  A.Katakami, K.Kobayashi, H.Sunami
- Journal Title
  
  Jpn. J. Appl. Phys. 43
- NAID
  10012949618
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications2003
- Author(s)
  T.Furukawa, H.Yamashita, H.Sunami
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.42, Part 1
  
  Pages: 2067-2072
- NAID
  80015977605
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications
- Author(s)
  T.Furukawa, H.Yamashita, H.Sunami
- Journal Title
  
  Jpn. J. Appl. Phys. 42
  
  Pages: 2067-2072
- NAID
  80015977605
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors
- Author(s)
  H.Sunami, S.Matsumura, K.Yoshikawa, K.Okuyama
- Journal Title
  
  Microelectronic Engineering 2006 issue(in press)
- NAID
  120000882661
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors
- Author(s)
  T.Tabei, K.Maeda, S.Yokoyama, H.Sunami
- Journal Title
  
  Jpn. J. Appl. Phys. 45(in press)
- NAID
  10022541844
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Journal Article] Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation
- Author(s)
  K.Kobayashi, T.Eto, K.Okuyama, K.Shibahara, H.Sunami
- Journal Title
  
  Jpn. J. Appl. Phys. 44
  
  Pages: 2273-2278
- NAID
  10015703895
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350189
[Patent] 電界効果トランジスタ2007
- Inventor(s)
  角南英夫, 大湯静憲, 三宅秀治
- Industrial Property Rights Holder
  広島大学, エルピーダメモリ(株)
- Industrial Property Number
  2007-114034
- Filing Date
  2007-04-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560309

1. YOKOYAMA Shin (80144880)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
2. SHIBAHARA Kentaro (50274139)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. 堀池靖浩 (20209274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 財満鎭明 (70158947)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 霜垣幸浩 (60192613)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 益一哉 (20157192)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 岩井洋 (40313358)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SUNAMI Hideo 角南 英夫

Research Projects

Research Products

Co-Researchers

Study in Metal-Gas-Semiconductor Field-Effect Transistor with High Radiation HardnessPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on Silicon Optical Modulator on InsulatorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

超高速・超微細・低消費電力ビームチャネル型CMOSトランジスタの開発Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

超機能化グローバル・インターフェース・インテグレーション研究

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Conduction Control in Ultra-High Density Beam-Channel CMOS TransistorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fundamental Study on Silicon Optical Switch for Total-Silicon Opto-Electric Integrated CircuitsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] VLSI工学-製造プロセス編-2006

Author(s)

Total Pages

Publisher

Description

Data Source

[Book] VLSI工学:製造プロセス編2006

Author(s)

Total Pages

Publisher

Data Source

[Book] VSLI工学:製造プロセス編2006

Author(s)

Total Pages

Publisher

Data Source

[Book] VLSI工学 : 製造プロセス編2006

Author(s)

Total Pages

Publisher

Description

Data Source

[Journal Article] Subthreshold-Characteristics Control of Narrow- channel SOI nMOS transistor Utilized Additional Side Gate Electrodes2007

Author(s)

Journal Title

Data Source

[Journal Article] Anomalous Whisker Generation in Ni-Silicided Source and Drain for Three-Dimensional Beam-Channel MOS Transistor on SOI Substrate2007

Author(s)

Journal Title

Data Source

[Journal Article] Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors2006

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors2006

Author(s)

Journal Title

NAID

SUNAMI Hideo 角南英夫