IWAI Sohachi 岩井荘八

… Alternative Names

岩井荘八イワイソウハチ

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Researcher Number	40087474
External Links
Affiliation (based on the past Project Information) *help	2002: 理化学研究所, 半導体工学研究室, 主任研究員 1997 – 2002: RIKEN,Semiconductor Laboratory, Advanced Researcher, 半導体工学研究室, 先任研究員 1994 – 1997: 理化学研究所, レーザー科学研究グループ, 先任研究員 1992: 理化学研究所, レーザ科学研究グループ, 研究員 1991: 理科学研究所, レーザ科学研究グループ, 研究員 1990: 理化学研究所, レーザー科学研究グループ, 研究員 1986 – 1987: 理化学研究所, レーザー科学研究グループ, 研究員
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering / Electronic materials/Electric materials / Applied materials
Keywords	Principal Investigator GaAs / 有機金属気相成長法 / MOVPE / 自己停止機構 / 原子層成長 / Self-limiting effect / 量子閉じ込め効果 / フォトルミネッセンス / 選択成長 / 量子ナノ構造 … More / Activation energy / Hole concentration / P-type conduction / Impurity doping / Alternative source supply / Aluminum Gallium Nitride / Gallium Nitride / 有機金属気相成長 / 原子層成長法 / 原子位置制御 / 紫外レーザー / スーパーラティス / Mg-ドーピング / AlGaN / III族窒化物半導体 / 活性化エネルギー / 正孔密度 / p型伝導 / 不純物ドーピング / 原料交互供給 / 窒化アルミニウムガリウム / 窒化ガリウム / 有機金属化合物気相成長 / Fibonacci progression / X-ray diffraction / Atomic layer superlattice / Quasi-crystal / Atomic Layer Epitaxy / フィボナッチ数列 / X線回折 / 原子層超格子 / 準結晶 / Quantum confinement effect / Photoluminescnec / Selective growth / Quantum Nano-structures / Atomic Layr Epitaxy / photoassisted decomposition / atomic layer epitaxy / triethylgallium / laser MOVPE / gallium arsenide … More Except Principal Investigator GaN / AlGaN / RHEED / MOCVD / SSBE / Wide bandgap / 紫外半導体レーザ / 紫外LED / 交互供給成長法 / 貫通転位密度 / Mgドーピング / 交互供給法 / MOCVD法 / ワイドバンドギャップ / 深紫外LED / In-doping / GSMBE / Quantum dot / GaAs / ガスソースMBE / 量子箱 / 超音速ビーム / 超音速 / 半導体薄膜の結晶成長 / ハイブリッド励起CVD法 / 水銀増感光CVD法 / Ar^+ laser / MOVPE / パターン化結晶成長 / 原子層エピタキシー / ALE / レーザーMOCV / アルコンイオンレーザ / 有機金属 / カリウム砒素 / 単原子層成長 / Photoluminescence / Optical properties / Threading dislocation density / UV-LEDs / In segregation / Quaternary InAlGaN / 電流注入 / MOCVD成長 / 内部量子効率 / GaN基板 / 貫通転移密度 / 紫外高効率発光 / フォトルミネッセンス / In組成変調 / InAlGaN4元混晶 / Hall-effect measurement / Co-doping / Mg-doping / Alternating supply method / Deep UV-LED / パルス供給法 / ホール濃度 / サファイヤ / p型 / 不純物対 / 第一原理計算 / MBE / 窒化物半導体 / 高濃度P型 / 交互供給コドーピング / III族窒化物半導体 / 有機金属気相成長法 / コドーピング / フォートルミネセンス / Inドーピング / Epitaxial growth / 吸着原子の脱離過程の観察 / 高速応答の電子線回折観察 / SSBE法 / 拡散を促進 / 素過程を制御 / 並進運動エネルギー / 短パルス超音速ビームエピタキシ法 / 結晶成長 / エピタキシャル / 短パルスビーム / Ultra-fine controlled epitaxial growth / High kinetic energy / Epitaxial crystal growth / Supersonic beam / Controllability of epitaxial growth / Control of surface process / Surface processes / Short pulse supersonic beam epitaxy / 反応制御 / 時間分割的な制御 / 高速表面観察 / ミリ秒時間分解 / エピタキシ- / ノズルビーム / 短パルス / 短パルス超音速ノズルビームエピタキシ-法 / 精密な成長制御性 / 短パルス状 / エピタキシャル成長法 / 超音速分子ビーム / 成長制御性 / 素過程 / 短パルス超音速ノズルビームエピタキシャル法 / 遷移金属 / X線多層膜ミラー / 原子層成長 / デュアルビーム法 / アトミックレジスト / 表面光干渉法 / Arレ-ザ励起MOVPE / ディジタル光CVD法 / レ-ザ溶融再結晶化法 Less

Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN
- Principal Investigator
  
  HIRAYAMA Hideki
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
- Principal Investigator
  
  HIRAYAMA Hideki, 青柳克信
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN
  Tokyo Institute of Technology
Study on Impurity Co-Doping by Atomic Positional ControlPrincipal Investigator
- Principal Investigator
  
  IWAI Souhachi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN (The Institute of Physical & Chemical Research)
Crystal growth of III-V nitride semiconductor and its applications by short pulse supersonic beam epitaxy
- Principal Investigator
  
  SHEN Xu-Qiang
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical Research (RIKEN)
金属原子層成長法による高性能X線ミラーの作製
- Principal Investigator
  
  石井真史
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The Institute of Physical and Chemical Research
Periodic Modulation of Superlattice by Atomic Layer Epitaxy and Its Application to synthesis of Novel Functional MaterialsPrincipal Investigator
- Principal Investigator
  
  IWAI Sohachi
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical research (RIKEN)
Development of reactively controlled super-sonic nozzle beam epitaxial growth technique
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical Research (RIKEN)
原子層エピタキシ-選択成長による低次元量子構造作製に関する研究Principal Investigator
- Principal Investigator
  
  岩井荘八
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The Institute of Physical and Chemical Research
Short pulse Supersonic Beam Epitaxy
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  THE INSTITUTE OF PHYSICAL AND CHEMICAL RESEARCH (RIKEN)
Fabrication and Characterization of Atomic Layr Controlled Quantum Nano-structuresPrincipal Investigator
- Principal Investigator
  
  IWAI Sohachi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The Institute of Physical and Chemical research (RIKEN)
膜形成の基礎研究
- Principal Investigator
  
  高橋清
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
膜形成の基礎研究
- Principal Investigator
  
  高橋清
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
レ-ザ-単原子層制御エピタキシ-の成長機構の解明と単原子層制御ヘテロ構造の製作Principal Investigator
- Principal Investigator
  
  岩井荘八
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The Institute of Physical and Chemical Research
Developement of pattern-defined-epitaxial growth employing laser MOCVD and its application to new optoelectric devices
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  The Institute of Physical and Chemical Research

All 2003 2002

All Journal Article Patent

[Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai
- Journal Title
  
  Material Research Society Symposium Proceeding 719
  
  Pages: 3-9
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High Doped p-Type GaN Grwon by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai
- Journal Title
  
  Material Research Society Symposium Proceeding 719
  
  Pages: 3-9
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Material Research Society Symposium Proceeding Vol.719
  
  Pages: 3-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High Doped 'p-Type GaN Grown by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Material Research Society Symposium Proceeding Vol.719
  
  Pages: 3-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Patent] 半導体の結晶成長方法、半導体の不純物ドーピング方法及びその装置並びに半導体材料2003
- Inventor(s)
  岩井荘八
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Industrial Property Number
  2003-016940
- Filing Date
  2003-01-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Patent] 半導体の結晶成長方法、半導の不純物ドーピング方法及その装置並びに半導体材料2003
- Inventor(s)
  岩井荘八
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Industrial Property Number
  2003-016940
- Filing Date
  2003-01-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001

1. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 10 results

# of Collaborated Products: 1 results
2. MEGURO Takashi (20182149)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
3. HIRAYAMA Hideki (70270593)

# of Collaborated Projects: 4 results

# of Collaborated Products: 2 results
4. ISSHIKI Hideo (60260212)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. SEGAWA Yusaburo (30087473)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. ZHANG Suiah (20260218)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. SHEN Xu-Qiang (50272381)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. 高橋清 (10016313)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. 吉川明彦 (20016603)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. 松村正清 (30110729)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. 坪内和夫 (30006283)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
12. 垂井康夫 (10143629)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. 田中悟 (80281640)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
14. NOMURA Shintarou (90271527)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. KAWASAKI Koji (10234056)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. YOSHIDA Hiroshi (30133929)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 石井真史 (90281667)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. DEN Akiharu

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. DOI Atsutoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

IWAI Sohachi 岩井 荘八

岩井 荘八 イワイ ソウハチ

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Study on Impurity Co-Doping by Atomic Positional ControlPrincipal Investigator

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Periodic Modulation of Superlattice by Atomic Layer Epitaxy and Its Application to synthesis of Novel Functional MaterialsPrincipal Investigator

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原子層エピタキシ-選択成長による低次元量子構造作製に関する研究Principal Investigator

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Fabrication and Characterization of Atomic Layr Controlled Quantum Nano-structuresPrincipal Investigator

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Principal Investigator

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レ-ザ-単原子層制御エピタキシ-の成長機構の解明と単原子層制御ヘテロ構造の製作Principal Investigator

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[Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002

Author(s)

Journal Title

Description

IWAI Sohachi 岩井荘八

岩井荘八イワイソウハチ