SASAKI Kimihiro 佐々木公洋

Researcher Number	40162359
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Affiliation (based on the past Project Information) *help	2005 – 2006: Kanazawa University, School of Natural Science & Technology, Professor, 自然科学研究科, 教授 2004 – 2005: 金沢大学, 自然科学研究科, 助教授 2001 – 2003: Kanazawa University, Faculty of Engineering, Associate Professor, 工学部, 助教授 1999 – 2000: 金沢大学, 自然科学研究科, 助教授 1995 – 1997: 金沢大学, 工学部, 助教授 … More 1993 – 1994: 金沢大学, 工学部, 講師 1992: 東京工業大学, 総理工, 助手 1991 – 1992: 東京工業大学, 総合理工学研究科, 助手 1991: 東京工業大学, 大学院・総合理工学研究科, 助手 1990: 東京工業大学, 大学院総理工, 助手 1989: 東京工業大学, 総合理工学研究科, 助手 1987 – 1988: 東京工業大学, 大学院総合理工学研究科, 助手 1986: 東京工業大学, 総合理工学研究科, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / 電子デバイス・機器工学 Except Principal Investigator 電子材料工学 / Applied materials / Electronic materials/Electric materials / Applied physics, general
Keywords	Principal Investigator SiGe / ZT / ZrO2 / MOSFET / Metallic Mode / Sputtering / スパッタリング / Epitaxial Growth / ECR / SiC … More / エピタキシャル成長 / 熱電効果 / ヘテロ接合 / Crystalline Defect / Seebeck coefficient / Power Factor / Strain / Thermo-electric Effect / 熱電性能指数 / 多層構造膜 / 高濃度ドープ / 結晶欠陥 / ゼーベック係数 / パワーファクター / 歪み緩和 / Limitted Reaction / High-k Material / Thin Film / ゲート絶縁膜 / 金属モードスパッタ / 制限反応スパッタ / 短時間熱処理 / high-kゲートテ絶縁物 / SiO2 / 高誘電率 / 制限反応素スパッタ法 / ZrO_2 / 制限反応 / High-K材料 / メタリックモード / 薄膜 / Metal-Oxide Combined Target / ZrTi Target / Isotope Oxygen / Oxide Mode / PZT Thin Films / 金属・酸化物複合ターゲット / 金属-酸化物複合ターゲット / ZrTiターゲット / 金属一酸化物複合ターゲット / ZrTr ターゲット / 同位体酸素 / 酸化物モード / 金属モード / PZT薄膜 / Ion Beam Sputtering / Amorphous Si / Bipolar Transistor / Heterojunction / 水素プラズマ / プラズマ発光 / エッチング / Si薄膜 / プラズマ / CVD / 非晶質Si / イオンビームスパッタ / 非晶質SiC / バイポーラトランジスタ / SOI / 歪み / ゼーベック効果 / 微結晶SiC / プラズマ発光文光 / 非晶質膜 / 有機シランガス / ECRプラズマ … More Except Principal Investigator MOSFET / 弗化物 / シリコン / ヘテロエピタキシー / Si / PAS / 双晶 / ローテーショナル・ツイン / SiGe / イオン注入 / エピタキシャル成長 / amorphous Si / silicon-on-insulator / selective doping / lateral solid phase epitaxy / 選択ドープ構造 / 横方向固相成長 / 選択ドープ法 / 選択ドーピング / 三次元集積回路 / 非晶質シリコン / SOI / 横方向成長 / 固相成長 / ZrO2 / Limitted Reaction / High-k Material / Metallic Mode / Thin Film / Sputtering / S:Ge(シリコンゲルマニウム) / イットリア安定化ジルコニア / 反応性スパッタリング / ヘテロエピタキシャル成長 / イオンプレーラィレグ / フラッシュ蒸着 / ヘテロエピタキシャル / 人工超格子 / β-FeSi_2 / エピキシャル成長 / フラッシュ蒸着法 / ZrO_2 / 制限反応 / 高誘電率材料 / 金属モード / 薄膜 / スパッタリング / InP / Thermal Diffusivity / Photothermal Spectroscopy / Thermal Conductivity / Thermal conductivity / Photoacoustic Spectroscopy / 薄膜の熱拡散率 / 熱拡散率 / 熱伝導率 / 光音響分光法 / X線CTR法 / CaF_2 / 低温堆積技術 / 液晶ディスプレイ / TFT(薄膜トランジスタ) / 触媒CVD法 / ポリ・シリコン / 二段階成長 / 界面 / 電子線 / ブル-スタ-角 / P偏光 / P(リン) / 表面改質 / 電子ビーム / その場観察 / 表面光吸収法 / 2段階成長 / (111)面 / GaAs / ヘテロエピタキシ- / 回転双晶 / ロ-テ-ショナル・ツイン / HBT / 無ひずみ / ひずみ成長 / ヘテロ接合 / シリコン系ヘテロ接合 / 高濃度ド-ピング / 歪成長 / 格子整合 / 熱反応CVD / 固相エピタキシャル成長 / 蒸着 / 酸化物超伝導薄膜 / ア-ク放電 Less

結晶/非晶質混合相シリコン系材料による巨大熱電現象の実証とその応用Principal Investigator
- Principal Investigator
  
  佐々木公洋
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
Generation of Giant Thermo-electric Power by Ultra-heavily Boron Doped SiGe and Its ApplicationPrincipal Investigator
- Principal Investigator
  
  SASAKI Kimihiro
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
Investigation of YSZ insulator fims with high dielectric constant prepared by limited reaction sputtering techniquePrincipal Investigator
- Principal Investigator
  
  SASAKI Kimihiro
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
Development Research of Appratus for Artificial Lattice Utilizing Sputtering and Ion-Plating Combined Technique
- Principal Investigator
  
  HATA Tomonobu
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
Low Temperature Preparation of Ferroelectric (PZT) Thin Films by New Sputter Deposition Mode and Investigation of Its MechanismsPrincipal Investigator
- Principal Investigator
  
  HATA Tomonobu, 佐々木公洋
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
Study on New Emitter Structure Using Ultra-Thin Silicon Carbide Films as Hole Blocking LayrPrincipal Investigator
- Principal Investigator
  
  SASAKI Kimihiro
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Kanazawa University
Study of high reslution measurement of thin-film-thermal-properties by the ultra-high sensitive PAS
- Principal Investigator
  
  HATA Tomonobu
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied physics, general
- Research Institution
  Kanazawa University
極薄SiC膜を正孔障壁層に用いる新しいエミッタ構造の研究Principal Investigator
- Principal Investigator
  
  佐々木公洋
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kanazawa University
触媒CVD法による高移動度ポリ・シリコン膜の低温形成
- Principal Investigator
  
  松村英樹
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Japan Advanced Institute of Science and Technology
ヘテロ成長におけるロ-テ-ショナル・ツイン生成機構の解明とその制御
- Principal Investigator
  
  古川静二郎
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
表面光吸収法を用いたその場観察による電子ビーム表面改質エピタキシーの機構解明
- Principal Investigator
  
  古川静二郎, 筒井一生
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  電子材料工学
- Research Institution
  Tokyo Institute of Technology
ヘテロ成長におけるローテーショナル・ツイン生成機構の解明とその制御
- Principal Investigator
  
  古川静二郎
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
ヘテロ成長におけるローテーショナル・ツイン生成機構の解明とその制御
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
無ひずみシリコン系ヘテロ接合の新しい作製手法とその超高速素子への応用
- Principal Investigator
  
  FURUKAWA Seijiro
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Tokyo Institute of Technology
ア-ク放電蒸着法を用いたSi基板上への酸化物超伝導薄膜のエピタキシャル成長
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology
Lateral Solid Phase Epitaxy of Selectively Doped Si Films
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials
- Research Institution
  Tokyo Institute of Technology

All 2006 2005 2004 2003 Other

All Journal Article Book Patent

[Book] Future Textile2006
- Author(s)
  堀照夫監修, 佐々木公洋他
- Total Pages
  438
- Publisher
  繊維社
- Data Source
  KAKENHI-PROJECT-15360161
[Book] Future Texile2006
- Author(s)
  堀照夫監修, 佐々木公洋他
- Total Pages
  438
- Publisher
  繊維社
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Epitaxial Growth and Thermoelectric Properties of SiGe Films Prepared By Ion Sputtering Technique2006
- Author(s)
  K.Sasaki, J.Yamamoto, H.Watase, A.Motoba
- Journal Title
  
  JAIST International Symposium on Nano-Technology 2006(invited) pp.16-17
  
  Pages: 16-17
- Data Source
  KAKENHI-PROJECT-18360145
[Journal Article] A novel magnetron sputtering for flexible coatings as a function for production of high quality films2006
- Author(s)
  C.Wang, K.Sasaki, Y.Yonezawa, T.Hata
- Journal Title
  
  Vacuum (In press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Crystallinity and strain control growth of SiGe using ion sputtering technique2006
- Author(s)
  Kimihiro Sasaki, Kazuya Yoshimori
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 124-127
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Crystallinity and strain control growth of SiGe using ion sputtering technique2006
- Author(s)
  Kimihiro Sasaki, Kazuya Yoshimori
- Journal Title
  
  Thin Solid Films (In press)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Future Textile2006
- Author(s)
  T.Hori, K.Sasaki et al.
- Journal Title
  
  SENI-SHA
  
  Pages: 113-116
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] 劣化エピラキシャル成長したSiGe膜の熱電特性?基板の影響?2006
- Author(s)
  的場, 早平, 佐々木
- Journal Title
  
  日本熱電学会第3解学術講演会論文集
  
  Pages: 70-71
- Data Source
  KAKENHI-PROJECT-18360145
[Journal Article] 劣化エピラキシャル成長した作製されたSiGe薄膜の熱電性能2006
- Author(s)
  的場, 早平, 佐々木
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Pages: 59-63
- Data Source
  KAKENHI-PROJECT-18360145
[Journal Article] Unbalanced Magnetron Sputtering using Cylindrical Target for Low-temperature Optical Costing2005
- Author(s)
  C.Wang, K.Sasaki, Y.Yonezawa, T.Hata
- Journal Title
  
  Jpn.J.Appl.Phys. 44[1B]
  
  Pages: 669-672
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Thermo-electric Properties of Deteriorate Epitaxial Grown Si-Ge Based Thin Films2005
- Author(s)
  H.Watase, A.Matoba, K.Sasaki, Y.Okamoto, J.Morimoto
- Journal Title
  
  2nd Meeting of The Thermoelectrics Society of Japan
  
  Pages: 66-67
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] A novel magnetron sputtering for flexible coatings as a function for production of high quality films2005
- Author(s)
  C.Wang, K.Sasaki, Y.Yonezawa, T.Hata
- Journal Title
  
  Proc.of 8th Intern.Symposium on Sputtering & Plasma process
  
  Pages: 58-61
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] 劣化エピタキシャル成長したSi-Ge系薄膜の熱電特性2005
- Author(s)
  渡瀬博之, 的場彰成, 佐々木公洋, 岡本庸一, 守本純
- Journal Title
  
  第2回日本熱電学会学術講演会
  
  Pages: 66-67
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Unbalanced Magnetron Sputtering using Cylindrical Target for Low-temperature Optical Costing2005
- Author(s)
  C.Wang, K.Sasaki, Y.Yonezawa, T.Hata
- Journal Title
  
  Jpn.J.Appl.Phys. 44・1B
  
  Pages: 669-672
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Sputter Growth SiGe Films -Epitaxy, Strain and Thermo-electric Properties2004
- Author(s)
  K.Sasaki, T.Hata
- Journal Title
  
  Abs.3^<rd> Intern.Workshop on New Group IV(Si-Ge-C) Semiconductors
  
  Pages: 45-46
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Sputter Growth SiGe Films-Epitaxy, Strain and Thermo-electric Properties2004
- Author(s)
  K.Sasaki, T.Hata
- Journal Title
  
  Abs.3^<rd> Intern.Workshop on New Group IV(Si-Ge-C) Semiconductors
  
  Pages: 45-46
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Epitaxial Growth of SiGe Films Grown by Ion-Beam Sputtering and Generation of Large Thermoelectric Power2004
- Author(s)
  K.Sasaki, M.Kitai, H.Watase
- Journal Title
  
  Tech.Dig.of 2004 AWAD
  
  Pages: 91-95
- NAID
  110003175593
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Thermoelectric Properties of Si/Ge Multi-nanolaye Films Prepared by Ion-beam Sputtering Technique2004
- Author(s)
  M.Kitai, H.Watase, K.Sasaki, T.Hata
- Journal Title
  
  Abs.2004 Intern.Sypmp.on Organic and Inorganic Materials and Related Nanotechnologies
  
  Pages: 203-203
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Thermoelectric Properties of Si/Ge Multi-nanolayer Films Prepared by Ion-beam Sputtering Technique2004
- Author(s)
  M.Kitai, H.Watase, K.Sasaki, T.Hata
- Journal Title
  
  Abs.2004 Intern.Sypmp.on Organic and Inorganic Materials and Related Nanotechnologies
  
  Pages: 203-203
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Sputtering Epitaxy of SiGe Films Using Mixture Target2004
- Author(s)
  K.Yoshimori, K.Sasaki, T.Hata
- Journal Title
  
  Abs.2004 Intern.Sypmp.on Organic and Inorganic Materials and Related Nanotechnologies
  
  Pages: 202-202
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] Anomalous large thermoelectric power on heavily B-doped SiGe thin films with thermal annealing2003
- Author(s)
  T.Kawahara, S.M.Lee, Y.Okamoto, J.Morimoto, K.Sasaki, T.Hata
- Journal Title
  
  Jpn.J.Appl.Phys. 41(8B)
- NAID
  110004081121
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Journal Article] A novel magnetron sputtering for flexible coatings as a function for production of high quality films
- Author(s)
  C.Wang, K.Sasaki, Y.Yonezawa, T.Hata
- Journal Title
  
  Vacuum (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360161
[Patent] 傾斜材料とこれを用いた機能素子2005
- Inventor(s)
  畑朋延, 佐々木公洋, 森田信一
- Industrial Property Rights Holder
  IHI
- Filing Date
  2005-05-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360161

1. HATA Tomonobu (50019767)

# of Collaborated Projects: 7 results

# of Collaborated Products: 11 results
2. FURUKAWA Seijiro (60016318)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
3. TSUTSUI Kazuo (60188589)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
4. ISHIWARA Hiroshi (60016657)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. 川崎宏治 (10234056)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
6. 松村英樹 (90111682)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. 堀田将 (60199552)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. OKADA Osamu

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 守本純

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

SASAKI Kimihiro 佐々木 公洋

Research Projects

Research Products

Co-Researchers

結晶/非晶質混合相シリコン系材料による巨大熱電現象の実証とその応用Principal Investigator

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Generation of Giant Thermo-electric Power by Ultra-heavily Boron Doped SiGe and Its ApplicationPrincipal Investigator

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Investigation of YSZ insulator fims with high dielectric constant prepared by limited reaction sputtering techniquePrincipal Investigator

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Low Temperature Preparation of Ferroelectric (PZT) Thin Films by New Sputter Deposition Mode and Investigation of Its MechanismsPrincipal Investigator

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Study on New Emitter Structure Using Ultra-Thin Silicon Carbide Films as Hole Blocking LayrPrincipal Investigator

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極薄SiC膜を正孔障壁層に用いる新しいエミッタ構造の研究Principal Investigator

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SASAKI Kimihiro 佐々木公洋