NAKAGAWA Kiyokazu 中川清和

Researcher Number	40324181
Other IDs
Affiliation (based on the past Project Information) *help	2017: 山梨大学, 大学院総合研究部, 研究員 2014 – 2016: 山梨大学, 総合研究部, 教授 2012 – 2013: 山梨大学, 医学工学総合研究部, 教授 2007 – 2012: University of Yamanashi, Department of Research Interdisciplinary Graduate School of Medicine and Engineering, Professor 2008: 山梨大学, クリーンエネルギ研究センター, 准教授 … More 2006: 山梨大学, 大学院医学光学総合研究部, 教授 2006: 山梨大学, 大学院医学工学総合研究部, 教授 2003: 山梨大学, 大学院・医学工学総合研究部, 教授 2002: Yamanashi University, Professor, クリスタル科学研究センター, 教授 2002: 山梨大学, 工学部附属クリスタル科学研究センター, 教授 2001 – 2002: 山梨大学, 工学部, 教授 2001: 山梨大学, 附属無機合成研究所, 教授 2000: 山梨大学, 無機合成研究施設, 教授 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Plasma electronics / Thin film/Surface and interfacial physical properties / Applied materials science/Crystal engineering / Physical chemistry / Science and Engineering
Keywords	Principal Investigator thin film transistor / Polycrystalline Si / microwave plasma / 多結晶シリコン・ゲルマニウム / 電界効界トランジスタ / 電界効果トランジスタ / 多結晶シリコン / マイクロ波加熱 / strain relaxation / ion implantation … More / chemical mechanical polishing / high mobility / virtual substrate / SiGe heterostructure / 科学機械研磨法 / 擬似基 / 歪み緩和 / イオン注入 / 化学機械研磨法 / 超高移動度FET / 擬似基板 / Si系歪みヘテロ構造 / 水素ラジカル加熱 / Ge/Si基板ヘテロ構造 / Ge/Siヘテロ構造 / GeチャネルFET / ラジカル水素加熱 / GeSiヘテロ構造 / プラズマ / シリコン多結晶 / 電子デバイス / 電子材料 / 結晶成長 / 薄膜トランジスタ / 選択加熱 / プラズマ加熱 / 固相成長 / 半導体 … More Except Principal Investigator 水素原子 / 極低温 / 低温 / アモルファス / 薄膜 / 電子衝撃 / カーボン / 欠陥密度 / アモルファスカーボン / 低速電子 / シリコンゲルマニウム / Two-dimensional hole gas / Modulation doping / Strain-controlled thin film / Multicomponent Zone-melting Method / Molecular Beam Epitaxy / Silicon Germanium / 二次元正孔ガス / 変調ドーピング構造 / 歪み制御薄膜 / 溶質元素補給ゾーン成長法 / 分子線エピタキシー法 / 電子励起 / 低速電子線 / 水素 / 細孔 / 吸着 / クライオ / グラファイト / 凝縮 / トンネル現象 / DLC / トンネル / メタン / トネンル / 非晶質 / 高誘電率絶縁膜 / マイクロディスク / 光電子融合デバイス / 導波路 / 微小共振器 / 歪み / シミュレーション / フォトニック結晶 / 量子ドット / ゲルマニウム / 微結晶シリコン / 太陽電池 / ナノ材料 / 界面準位密度 / シリコン窒化膜 / 水素化アモルファスシリコン / 電子銃 / 飛行時間型質量分析計 / 放射線化学 / アモルファスシリコン / 電子線誘起反応 / トンネル反応 / 初期酸化 / リン吸着デジタル制御 / 自己触媒 / 島状成長 / 電界効果トランジスタ / 変調ドーピング / SiGe / 低温Si層 / CMP / 発光ダイオード / 電界効果型トランジス / 電界効果型トランジスタ / 光物性 / 電子物性 / 光エレクトロニクス / 人工IV族半導体 Less

Study on the ultra-low temperature synthesis of amorphous carbon thin films obtained by plasma excitation method of condensed gas.
- Principal Investigator
  
  SATO Tetsuya
- Project Period (FY)
  2014 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Plasma electronics
- Research Institution
  University of Yamanashi
Formation technology development of high quality Ge/Si heterostructures using hydrogen radicalPrincipal Investigator
- Principal Investigator
  
  NAKAGAWA Kiyokazu
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  University of Yamanashi
Development of selective heating method using microwave plasmaexcited speciesPrincipal Investigator
- Principal Investigator
  
  NAKAGAWA Kiyokazu
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Yamanashi
Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies
- Principal Investigator
  
  SHIRAKI Yasuhiro
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo City University
Study on the formation of carbon thin films obtained by electron-beam-induced-chemical vapor deposition combined with ultra low-temperature tunneling reaction of H atoms at ultra low temperature
- Principal Investigator
  
  SATO Tetsuya
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Yamanashi
Study on the formation of hydrogenated silicon films and silicon nano-structural materials obtained by electron-beam-induced-chemical vapor deposition at ultra low temperature
- Principal Investigator
  
  SATO Tetsuya
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical chemistry
- Research Institution
  University of Yamanashi
Selective and rapid heating method for polycrystallization of amorphous Si using microwave plasma irradiationPrincipal Investigator
- Principal Investigator
  
  NAKAGAWA Kiyokazu
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Yamanashi
Research on functional electronic devices based on straind-Si on SiGe alloy substrates
- Principal Investigator
  
  USAMI Noritaka
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Formation of virtual substrates for strained SiGe heterostructures and its application to high mobility FETsPrincipal Investigator
- Principal Investigator
  
  NAKAGAWA Kiyokazu
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Yamanashi
人工IV族半導体の形成と光・電子物性制御
- Principal Investigator
  
  SHIRAKI Yasuhiro
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo

All 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 Other

All Journal Article Presentation

[Journal Article] Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices2016
- Author(s)
  Tetsuji Arai, Hiroki Nakaie, Kazuki Kamimura, Hiroyuki Nakamura, Satoshi Ariizumi, Satoki Ashizawa, Keisuke Arimoto, Junji Yamanaka, Tetsuya Sato, Kiyokazu Nakagawa, Toshiyuki Takamatsu
- Journal Title
  
  Journal of Materials Science and Chemical Engineering
  
  Volume: 4 Issue: 01 Pages: 29-33
- DOI
  10.4236/msce.2016.41006
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390065
[Journal Article] Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si+ Ion Implantation2012
- Author(s)
  Motoki Satoh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Yasuhiro Shiraki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 10R Pages: 105801-105801
- DOI
  10.1143/jjap.51.105801
- NAID
  210000141389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation2011
- Author(s)
  Y.Hoshi, K.Sawano, A.Yamada, S.Nagakura, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Issue: 9 Pages: 095701-095701
- DOI
  10.1143/apex.4.095701
- NAID
  10029622735
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels2011
- Author(s)
  K.Sawano, K.Toyama, R.Masutomi, T.Okamoto, K.Arimoto, K.Nakagawa, N.Usami, Y.Shiraki
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 88 Pages: 465-468
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation2011
- Author(s)
  Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Pages: 95701-95701
- NAID
  10029622735
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Formation of Uniaxially Strained SiGe by Selective Ion Implantation Technique2010
- Author(s)
  Kentarou Sawano, Yusuke Hoshi, AtsunoriYamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, and Yasuhiro Shiraki
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Pages: 2454-2454
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Optical anisotropies of Si grown on step-graded SiGe(110) layers2010
- Author(s)
  R.E.Balderas-Navarro, L.F.Lastras-Martinez, K.Arimoto, R.Castro-Garcia, O.Villalobos-Aguilar, A.Lastras-Martinez, K.Nakagawa, K.Sawano, Y.Shiraki, N.Usami, K.Nakajima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 96
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique2010
- Author(s)
  Y. Hoshi, K. Sawano, A. Yamada, N. Usami,K. Arimoto, K. Nakagawa, and Y. Shiraki
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 107 Pages: 103509-103509
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Formation of Uniaxially Strained SiGe by Selective Ion Implantation Technique2010
- Author(s)
  Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki
- Journal Title
  
  Thin Solid Films 518
  
  Pages: 2454-2456
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation2010
- Author(s)
  Y.Hoshi, K.Sawano, A.Yamada, K.Arimoto, N.Usami, K.Nakagawa, Y.Shiraki
- Journal Title
  
  Thin Solid Films 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] メタン凝縮層からの炭素薄膜極低温合成2010
- Author(s)
  佐藤哲也、伊東佑将、森田直樹、井草裕志、小林憲明、中川清和、佐藤昇司
- Journal Title
  
  New Diamon
  
  Volume: vol.96 Pages: 29-32
- Data Source
  KAKENHI-PROJECT-21560031
[Journal Article] Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique2010
- Author(s)
  Y.Hoshi, K.Sawano, A.Yamada, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 107
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Local Control of Strain in SiGe by Ion Implantation Technique2009
- Author(s)
  K.Sawano, Y.Hoshi, Y.Hiraoka, N.Usami, K.Nakagawa, Y.Shiraki
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 806-808
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates2009
- Author(s)
  Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 809-813
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures2009
- Author(s)
  K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 95 Pages: 122109-122109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates2009
- Author(s)
  Keisuke Arimoto, Genki Kawaguchi, Kana Shimizu, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 814-818
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures2009
- Author(s)
  K.Sawano, K.Toyama, R.Masutomi, T.Okamoto, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
- Journal Title
  
  Applied Physics Letters 95
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method2009
- Author(s)
  Y.Hoshi, K.Sawano, Y.Hiraoka, Y.Sato, Y.Ogawa, A.Yamada, N.Usami, K.Nakagawa, Y.Shiraki
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 825-828
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates2009
- Author(s)
  Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima
- Journal Title
  
  Solid-State Electronics 53
  
  Pages: 1135-1143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Local Control of Strain in SiGe by IonImplantation Technique2009
- Author(s)
  K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami , K. Nakagawa, Y. Shiraki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 311 Pages: 806-808
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures2009
- Author(s)
  Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 819-824
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003
[Journal Article] New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication2008
- Author(s)
  M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano, Y. Shiraki
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 1547-1549
- NAID
  40015945438
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560007
[Journal Article] New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication2008
- Author(s)
  M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano and Y. Shiraki
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 1547-1549
- NAID
  40015945438
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560007
[Journal Article] Formation of microcrystalline Silicon and SiNx filmisby electron-beam-induced-chemical vapor deposition at ultra low temperature.2006
- Author(s)
  T.Sato, M.Mitsui, J.Yamanaka, K.Nakagawa, Y.Aoki, S.Sato, C.Miyata
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 61-64
- Data Source
  KAKENHI-PROJECT-18550014
[Journal Article] Formation of Microcrystalline Silicon and SiNx Films by Electron-Beam- Induced-Chemical Vapor Deposition at Ultra Low Temperature2006
- Author(s)
  T. Sato, M. Mitsui, J. Yamanaka, K. Nakagawa, et.al
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 61-64
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18550014
[Journal Article] Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe2006
- Author(s)
  M.Mitsui, a_K.Arimoto, J.Yamanaka, K.Nakagawa, K.Sawano, Y.Shiraki
- Journal Title
  
  Applied Physics Letters 89
  
  Pages: 192102-192102
- Data Source
  KAKENHI-PROJECT-18560007
[Presentation] PFC凝縮層へのプラズマ照射によるa-C:F形成とPTFE 表面改質2017
- Author(s)
  佐藤哲也, 山井孝太, 森川恭兵, 曽我遥華, 山本千綾, 山中淳二, 中川清和
- Organizer
  第78回応用物理学会秋季学術講演会2017
- Data Source
  KAKENHI-PROJECT-26390095
[Presentation] Si-ULSI用の電極形成のための熱処理技術の開発2016
- Author(s)
  上村和貴、中家大希、荒井哲司、山本千綾、有元圭介、山中淳二、中川清和、高松利行
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大大岡山キャンパス（東京都・目黒区）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] SiF4凝縮層の低速電子線誘起反応と水素原子のトンネル反応を利用したa-SiNxの極低温合成2016
- Author(s)
  坂巻直、佐藤哲也、中川清和
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大大岡山キャンパス（東京都・目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] 微傾斜基板を用いた伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造のモフォロジー及び素子特性2016
- Author(s)
  宇津山直人、佐藤圭、山田崇峰、有元圭介、山中淳二、中川清和、原康介、宇佐美徳隆、澤野憲太郎
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大大岡山キャンパス（東京都・目黒区）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] SiO2を用いたGaN基板上MOSFETのMg濃度依存性2016
- Author(s)
  上野勝典、高島信也、稲本拓朗、松山秀昭、江戸雅晴、中川清和
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大大岡山キャンパス（東京都・目黒区）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] GaNパワートランジスタのためのゲート酸化膜堆積技術の開発2016
- Author(s)
  高木翔太、荒井哲司、有元圭介、山中淳二、中川清和、高松利行、上野勝典
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大大岡山キャンパス（東京都・目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] マイクロ波励起プラズマを用いたWO3の形成と抵抗変化メモリへの応用2015
- Author(s)
  高木翔太、荒井哲司、有元圭介、山中淳二、中川清和、高松利行
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] プラズマCVD-SiO2を用いたGaN基板上MOSFETの特性2015
- Author(s)
  上野勝典、高島信也、松山秀昭、江戸雅晴、中川清和
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] [12p-P17-4] 伸張歪みSi/緩和SiGe/Si(110)の表面モフォロジーへの成長速度の影響2015
- Author(s)
  宇津山直人、佐藤圭、有元圭介、山中淳二、中川清和、宇佐美徳隆、澤野憲太郎
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] 水素ラジカルによるW、Niの選択加熱を用いたa-Siの固相成長法とTFTの作製2015
- Author(s)
  上村和貴、荒井哲司、有元圭介、山中淳二、佐藤哲也、中家大希、中川清和、高松利行、澤野憲太郎
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] Si(110)基板上SiGe膜の歪み緩和におけるイオン注入の効果2015
- Author(s)
  加藤まどか、村上太陽、有元圭介、山中淳二、中川清和、澤野憲太郎
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] 歪みSi/Si1-xCx/Si(001)ヘテロ構造の結晶性と不純物活性化過程との関係2015
- Author(s)
  藤原幸亮、酒井翔一朗、小林昭太、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] Ge/Siヘテロ構造の結晶性向上に向けた熱処理技術の開発2015
- Author(s)
  上村和貴、中家大希、荒井晢司、有元圭介、山中淳二、山本千綾、中川清和、高松利行
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] 伸張歪みSi/緩和SiGe/Si(110)の微細構造および電気的特性への熱処理の影響2014
- Author(s)
  宇津山直人，有元圭介，山中淳二，中川清和，宇佐美徳隆，澤野憲太郎
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道札幌市）
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] 水素ラジカルによる遷移金属の選択加熱を用いた多結晶Si膜形成とデバイスプロセス応用2014
- Author(s)
  中家大希，上村和貴，荒井哲司，有元圭介，山中淳二，佐藤哲也，中川清和，高松利行，澤野憲太郎
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] 水素ラジカルによる遷移金属の選択加熱とそのデバイス応用2014
- Author(s)
  上村和貴，荒井哲司，有元圭介，山中淳二，佐藤哲也，中川清和，高松利行，澤野憲太郎
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道札幌市）
- Year and Date
  2014-09-17
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] WO3の形成と抵抗変化メモリへの応用2014
- Author(s)
  高木翔太，池田礼隆，荒井哲司，有元圭介，山中淳二，中川清和，高松利行
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道札幌市）
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] 水素ラジカルを用いた遷移金属の選択加熱現象による薄膜トランジスタ用多結晶Si形成2013
- Author(s)
  中家大希，荒井哲司，有元圭介，山中淳二，佐藤哲也，中川清和，高松利行，澤野憲太郎，白木靖寛
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-25390065
[Presentation] 水素ラジカルによる遷移金属の選択加熱現象を利用した多結晶 Si形成技術とデバイスへの応用2013
- Author(s)
  中家大希、荒井哲司、大平隆裕、有元圭介、山中淳二、佐藤哲也、中川清和、高松利行、澤野憲太郎、白木靖寛
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-27
- Data Source
  KAKENHI-PROJECT-22560007
[Presentation] 低速電子線誘起反応と低温トンネル反応によるa-SiCx : Hの極低温合成2012
- Author(s)
  山田竜太郎,小林直樹,胡雪冰,佐藤哲也,有元圭介,山中淳二,中川清和
- Organizer
  2012春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] 水素ラジカルによる選択過熱現象を利用した Si1-xGex 薄膜形成技術2012
- Author(s)
  荒井哲司、川口裕樹、中村浩之、有元圭介、山中淳二、佐藤哲也、中川清和、高松利行、澤野憲太郎、星裕介、白木靖寛
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22560007
[Presentation] 高密度プラズマ形成技術とそのデバイス応用2012
- Author(s)
  荒井哲司、池田礼隆、有元圭介、山中淳二、佐藤哲也、高松利行、中川清和
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-22560007
[Presentation] 低速電子線照射により極低温合成したカーボン膜のESRによる構造欠陥評価2011
- Author(s)
  小林直樹,山田竜太郎,年森隆明,森田直樹,佐藤哲也,有元圭介,山中淳二,中川清和
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] Selective Heating Method forPoly-crystallization of Amorphous Si UsingHydrogen Microwave Plasma2011
- Author(s)
  T. Arai, H. Nakamura, S. Ariizumi, A.Ashizawa, T. Takamatsu, K. Arimoto, J.Yamanaka, T. Sato, K. Nakagawa, K. Sawano,Y. Shiraki
- Organizer
  The 5th AsianConference on Crystal Growth and CrystalTechnology
- Place of Presentation
  Singapore
- Year and Date
  2011-06-28
- Data Source
  KAKENHI-PROJECT-22560007
[Presentation] Stripe line width dependence of anisotorpic strain states induced into SiGe films by selective ion implantation technique2011
- Author(s)
  Y.Hoshi, K.Sawano, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
- Organizer
  E-MRS 2011 Spring Meeting
- Place of Presentation
  Nice, France
- Year and Date
  2011-05-10
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] Microstructure Change of Si0.99C0.01 Thin Films Caused by Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation and Successive Rapid Thermal Annealing Treatment2011
- Author(s)
  Shigenori Inoue, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2011-08-28
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels2010
- Author(s)
  K.Sawano, K.Toyama, R.Masutomi, T.Okamoto, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
- Organizer
  E-MRS 2010 Spring Meeting, Symposium H
- Place of Presentation
  Strasbourg (France)
- Year and Date
  2010-06-10
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] イオン注入法によるSi(111)基板上緩和SiGeバッファ層の作製2010
- Author(s)
  久保智史, 澤野憲太郎, 星裕介, 中川清和, 白木靖寛
- Organizer
  2010年秋季<第71回>応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] CH_4/Ar固体薄膜への低速電子線衝撃: Arマトリックス単離赤外分光法による反応解析(16a-ND-9)2010
- Author(s)
  佐藤哲也,渡邊陵,小林直樹,森田直樹,伊東佑将,荒井哲司,宮嶋尚哉,中川清和
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] 低速電子線誘起反応と低温トンネル反応により合成した炭素膜のTEM観察2010
- Author(s)
  森田直樹,伊東佑将,渡辺陵,荒井哲司,佐藤哲也,山本千綾,有元圭介,山中淳二,中川清和
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] Effect of line width on uniasial strain states of SiGe layers fabricated by selective ion implantation2010
- Author(s)
  Y.Hoshi, K.Sawano, A.Yamada, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
- Organizer
  5th International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  Stockholm (Sweden)
- Year and Date
  2010-05-24
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] (110)面を表面に有する歪みSiの正孔移動度と結晶モフォロジーとの関係2010
- Author(s)
  八木聡介, 有元圭介, 中川清和, 宇佐美徳隆, 中嶋一雄, 澤野憲太郎, 白木靖寛
- Organizer
  2010年秋季<第71回>応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] Ar^+およびSi^+イオン注入欠陥がSiGe層の歪緩和に与える影響2010
- Author(s)
  星裕介, 澤野憲太郎, 宇佐美徳隆, 有元圭介, 中川清和, 白木靖寛
- Organizer
  2010年秋季<第71回>応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] 選択的イオン注入法により作製される一軸性歪みSiGeの表面構造評価2010
- Author(s)
  永倉壮, 星裕介, 澤野憲太郎, 宇佐美徳隆, 中川清和, 白木靖寛
- Organizer
  2010年秋季<第71回>応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21246003
[Presentation] 低速電子線誘起堆積法と水素原子の低温トンネル反応による炭素薄膜の極低温合成2009
- Author(s)
  伊東佑将,胡雪氷,土屋新平,森田直樹,荒井哲司,佐藤哲也,中川清和
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] 低速電子線誘起反応とトンネル反応により合成した炭素薄膜の表面分析2009
- Author(s)
  森田直樹,伊東佑将,胡雪氷,土屋新平,渡辺陵,佐藤哲也,山本千綾,有元圭介,山中淳二,中川清和
- Organizer
  2009年度実用表面分析講演会(PSA-09)
- Place of Presentation
  山梨大学
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] マイクロ波プラズマ加熱による非晶質シリコンの結晶化における加熱機構2008
- Author(s)
  芦澤里樹, 有泉慧, 三井実, 有元圭介, 山中淳二, 中川清和, 荒井哲司, 高松利行, 澤野憲太郎, 白木靖寛
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Year and Date
  2008-03-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560007
[Presentation] Crystallization of Amorphous Silicon by Micro-wave Annealing2007
- Author(s)
  S. Ashizawa, M. Mitsui, T. Horie, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Arai, T. Takamatsu, K. Sawano, Y. Shiraki
- Organizer
  54th Spring Meeting, Japan Society of Applied Physics
- Place of Presentation
  Aoyama Gakuin University. Japan
- Year and Date
  2007-03-30
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560007
[Presentation] マイクロ波加熱による非晶質シリコンの結晶化2007
- Author(s)
  芦澤里樹、三井実、堀江忠司、有元圭介、山中淳二、中川清和、荒井哲司、高松利行、澤野憲太郎、白木靖寛第
- Organizer
  54回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560007
[Presentation] 低速電子線誘起堆積法とH原子トンネル反応を利用した水素化アモルファスシリコンの合成2007
- Author(s)
  佐藤哲也, 小林憲明, 今村友一, 中川清和, 佐藤昇司
- Organizer
  第54回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-18550014
[Presentation] Heating Mechanism of Microwave Plasma Annealing for Crystallization of Amorphous Silicon2007
- Author(s)
  S. Ashizawa, S. Ariizumi, M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Arai, T. Takamatsu, K. Sawano, Y. Shiraki
- Organizer
  55th Spring Meeting, Japan Society of Applied Physics
- Place of Presentation
  Nihon University, Japan
- Year and Date
  2007-03-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560007
[Presentation] 非晶質シリコンのマイクロ波加熱による結晶化の雰囲気依存性2007
- Author(s)
  芦澤里樹、三井実、有元圭介、山中淳二、中川清和、荒井哲司、高松利行、澤野憲太郎、白木靖寛
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560007
[Presentation] Atmosphere Dependence of Silicon Crystallization by Microwave Annealing2007
- Author(s)
  S. Ashizawa, M. Mitsui, K. Arimoto, J. Yamanaka, K. Nakagawa, T. Arai, T. Takamatsu, K. Sawano, Y. Shiraki
- Organizer
  68th Spring Meeting, Japan Society of Applied Physics
- Place of Presentation
  Hokkaido Insti tute of Technology, Japan
- Year and Date
  2007-09-04
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560007
[Presentation] 低速電子誘起成膜法によるSiNxの極低温合成と物性評価2007
- Author(s)
  小林憲明, 伊東佑将, 佐藤哲也, 三井実, 有元圭介, 山中淳二, 中川清和, 佐藤昇司
- Organizer
  第50回放射線化学討論会
- Place of Presentation
  京都大学, 宇治キャンパス
- Data Source
  KAKENHI-PROJECT-18550014
[Presentation] 有機フィルム基板上へのSiNx およびa-Si : H の極低温形成2007
- Author(s)
  佐藤哲也, 伊東佑将, 小林憲明, 中川清和, 青木裕, 佐藤昇司, 宮田千治
- Organizer
  第50回放射線化学討論会
- Place of Presentation
  京都大学, 宇治キャンパス
- Data Source
  KAKENHI-PROJECT-18550014
[Presentation] 極低温合成a-C:F膜のマイクロスクラッチ試験による密着性評価
- Author(s)
  曽我遥華、山井孝太、森川恭兵、佐藤哲也、中川清和
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南ｌキャンパス（神奈川）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26390095
[Presentation] FC凝縮層へのプラズマ照射により合成したa-C:F薄膜の物性評価
- Author(s)
  曽我遥華, 山井孝太,森川恭兵,佐藤哲也,中川清和
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26390095

1. SATO Tetsuya (60252011)

# of Collaborated Projects: 6 results

# of Collaborated Products: 27 results
2. YAMNAKA Junji (20293441)

# of Collaborated Projects: 5 results

# of Collaborated Products: 35 results
3. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 3 results

# of Collaborated Products: 27 results
4. USAMI Noritaka (20262107)

# of Collaborated Projects: 3 results

# of Collaborated Products: 24 results
5. SAWANO Kentarou (90409376)

# of Collaborated Projects: 2 results

# of Collaborated Products: 36 results
6. KOH Shinji (50323663)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. ARIMOTO Keisuke (30345699)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
8. MARUIZUMI Takuya (00398893)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. NOHIRA Hiroshi (30241110)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. SETO Kenshu (10420241)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. XU Xuejun (80593334)

# of Collaborated Projects: 1 results

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12. XIA Jinsong (00434184)

# of Collaborated Projects: 1 results

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13. MATSUI Toshiaki (20358922)

# of Collaborated Projects: 1 results

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14. MIYATA Noriyuki (40358130)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. MIYAJIMA Naoya (20345698)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
16. NAKAJIMA Kazuo (80311554)

# of Collaborated Projects: 1 results

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17. UJIHARA Toru (60312641)

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18. SAZAKI Gen (60261509)

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19. 尾鍋研太郎 (50204227)

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20. 末光眞希 (00134057)

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21. 長田俊人 (00192526)

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22. 櫻庭政夫 (30271993)

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23. 片山竜二

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NAKAGAWA Kiyokazu 中川 清和

Research Projects

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Study on the ultra-low temperature synthesis of amorphous carbon thin films obtained by plasma excitation method of condensed gas.

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Formation technology development of high quality Ge/Si heterostructures using hydrogen radicalPrincipal Investigator

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Development of selective heating method using microwave plasmaexcited speciesPrincipal Investigator

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Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologies

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Study on the formation of carbon thin films obtained by electron-beam-induced-chemical vapor deposition combined with ultra low-temperature tunneling reaction of H atoms at ultra low temperature

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Study on the formation of hydrogenated silicon films and silicon nano-structural materials obtained by electron-beam-induced-chemical vapor deposition at ultra low temperature

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Selective and rapid heating method for polycrystallization of amorphous Si using microwave plasma irradiationPrincipal Investigator

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Research on functional electronic devices based on straind-Si on SiGe alloy substrates

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Formation of virtual substrates for strained SiGe heterostructures and its application to high mobility FETsPrincipal Investigator

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人工IV族半導体の形成と光・電子物性制御

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[Journal Article] Selective Heating of Transition Metal Usings Hydrogen Plasma and Its Application to Formation of Nickel Silicide Electrodes for Silicon Ultralarge-Scale Integration Devices2016

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[Journal Article] Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si+ Ion Implantation2012

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[Journal Article] Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation2011

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NAKAGAWA Kiyokazu 中川清和