Akiyama Toru 秋山亨

… Alternative Names

AKIYAMA Toru 秋山亨

Less

Researcher Number	40362363
Other IDs
Affiliation (Current)	2025: 三重大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help	2024: 三重大学, 工学研究科, 准教授 2016 – 2022: 三重大学, 工学研究科, 准教授 2014: 三重大学, 工学(系)研究科(研究院), 准教授 2014: 三重大学, 大学院工学研究科, 准教授 2012 – 2013: 三重大学, 工学(系)研究科(研究院), 助教 … More 2008 – 2011: 三重大学, 大学院・工学研究科, 助教 2008: 三重大学, 工学部, 助教 2007: 三重大学, 大学院・工学研究科, 助数 2006: 三重大学, 大学院工学研究科, 助手 2004 – 2005: 三重大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Basic Section 29020:Thin film/surface and interfacial physical properties-related / Thin film/Surface and interfacial physical properties Except Principal Investigator Thin film/Surface and interfacial physical properties / Basic Section 30010:Crystal engineering-related / Basic Section 29020:Thin film/surface and interfacial physical properties-related / Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Principal Investigator 混晶 / トポロジカル絶縁体 / 2層ハニカム構造 / 第一原理計算 / 原子層物質 / 表面再構成 / 半導体表面 / オクテットAB型化合物 / 二層ハニカム構造 / vdWヘテロ構造 … More / グラフェン / 遷移金属ダイカルコゲナイド / 格子不整合度 / ヤヌス型原子層 / シミュレーション / シリセン / SiGeSn / SeSn / SiGe / ディラックコーン / 電子状態 / II-VI族 / III-V族 / 混和性 … More Except Principal Investigator 量子ドット / 成長機構 / 計算科学 / ナノ構造 / 状態図 / 半導体表面構造 / 量子論的アプローチ / 窒化物半導体 / LSI / ぬれ層表面 / 格子不整合系 / 計算物理 / 表面・界面物性 / ラマン分光 / 縦光学フォノン制御 / 電子散乱 / 発光効率 / フォノン制御 / 計算機シミュレーション / 量子ドット形成機構 / ぬれ層 / 半導体ヘテロエピタキシャル成長 / 成長様式 / 格子不整合転位 / ひずみ緩和 / ぬれ層表面構造 / ヘテロエピタキシャル成長 / 半導体量子ドット形成 / 超格子 / 転位 / 偏析 / 窒化物混晶半導体 / 特異構造場 / 結晶工学 / 結晶成長 / 自然超格子 / 組成変調 / 極性反転 / ボンドエンジニアリング / 特異構造 / Interface Reaction / High-k dielectrics / Insulating films / Impurity / Defects / Semiconductor / Silicon / HfO_2 / トランジスタ特性 / Si界面 / High-k絶縁膜 / SiO_2界面 / Si / シリコンナノ構造 / 欠陥 / 界面 / 第一原理計算 / 理論 / 量子論 / 界面反応 / 高誘電率絶縁膜 / 絶縁膜 / 不純物 / 格子欠陥 / 半導体 / シリコン / 計算材料科学 / 成長過程 / 吸着・脱離 / 半導体ぬれ層 / 状熊図 / ドーピング機構 / 酸化物表面構造 / 積層欠陥四面体 / ナノワイヤ / マイクロ・ナのデバイス / 自己拡散 / シリコン酸窒化 / マイクロ・ナノデバイス Less

Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devices
- Principal Investigator
  
  石谷善博
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Chiba University
Development of bond engineering descriptors and its application to widegap semiconductor crystal growthPrincipal Investigator
- Principal Investigator
  
  秋山亨
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Mie University
Materials design of two-dimensional octet AB compounds by bond engineeringPrincipal Investigator
- Principal Investigator
  
  Akiyama Toru
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Mie University
Bond engineering for quantum dot formation in nitride semiconductors
- Principal Investigator
  
  Ito Tomonori
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Mie University
Material design of group-IV alloy monolayers using bond engineering conceptPrincipal Investigator
- Principal Investigator
  
  Akiyama Toru
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Mie University
Computational materials design for hetero-bond manipulation
- Principal Investigator
  
  ITO Tomonori
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Mie University
Bond engineering in quantum dot formation mechanism
- Principal Investigator
  
  Ito Tomonori
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Mie University
Physics in wetting layer on bond engineering
- Principal Investigator
  
  ITO Tomonori
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Mie University
Bond Engineering in Surface Structure and Nano-Structure Formation for Lattice Mismatch Systems
- Principal Investigator
  
  ITO Tomonori
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Mie University
Control of Silicon Nanostructure Oxidation by Nitrogen Doping
- Principal Investigator
  
  UEMATSU Masashi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Keio University
Bond Engineering in Prediction of Surface Phase Diagram and Its ApPlication to Nano-Structure Formation
- Principal Investigator
  
  ITO Tomonori
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Mie University
Theoretical studies on the behaviors of impurities in high-k gate dielectrics.
- Principal Investigator
  
  SHIRAISHI Kenji
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba

[Book] Advances in Computer Simulation Studies and Crystal Growth2019
- Author(s)
  Hiroki Nada, Tomonori Ito, Toru Akiyama他
- Total Pages
  195
- Publisher
  MDPI
- ISBN
  9783038973560
- Data Source
  KAKENHI-PROJECT-16K04962
[Book] Epitaxial Growth of III-Nitride Compounds Computational Approach2018
- Author(s)
  Toru Akiyama, Tomonori Ito, Yoshihiro Kangawa, Takashi Nakayama, Kenji Shiraishi
- Total Pages
  223
- Publisher
  Springer
- ISBN
  9783319766409
- Data Source
  KAKENHI-PROJECT-16K04962
[Book] Epitaxial Growth of III-Nitride Compounds Computational Approach2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Yoshihiro Kangawa Takashi Nakayama, Kenji Shiraishi
- Total Pages
  223
- Publisher
  Springer
- ISBN
  9783319766409
- Data Source
  KAKENHI-PLANNED-16H06418
[Book] Advances in Computer Simulation Studies on Crystal Growth2018
- Author(s)
  Hiroki Nada (Editor), Tomonori Ito, Toru Akiyama 他
- Total Pages
  137
- Publisher
  Mdpi AG
- Data Source
  KAKENHI-PLANNED-16H06418
[Book] ナノワイヤ最新技術の基礎と応用展開（第2編第6章　形成機構計算）2013
- Author(s)
  秋山亨
- Total Pages
  241
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] First-principles study for self-limiting growth of GaN layers on AlN(0001) surface2023
- Author(s)
  Sokudo Haruka、Akiyama Toru、Ito Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1014-SC1014
- DOI
  10.35848/1347-4065/aca810
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324
[Journal Article] Role of charged oxygen vacancies and substrate lattice constraint on structural stability of Ga2O3 polymorphs2023
- Author(s)
 Akiyama Toru、Kawamura Takahiro、Ito Tomonori
- Journal Title
 
 Applied Physics Express
 
 Volume: 16 Issue: 1 Pages: 015508-015508
- DOI
 10.35848/1882-0786/acb12e
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-20K05324
[Journal Article] Bandgap Change in Short‐Period InN/AlN Superlattices Induced by Lattice Strain2023
- Author(s)
  Kawamura Takahiro、Basaki Kouhei、Korei Akito、Akiyama Toru、Kangawa Yoshihiro
- Journal Title
  
  physica status solidi (b)
  
  Volume: 260 Issue: 8 Pages: 2200549-2200549
- DOI
  10.1002/pssb.202200549
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K05324
[Journal Article] Effect of lattice constraint on structural stability and miscibility of (AlxGa1-x)2O3 films: a first-principles study2023
- Author(s)
  Fujita Shuri、Akiyama Toru、Kawamura Takahiro、Ito Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1031-SC1031
- DOI
  10.35848/1347-4065/acae5f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324
[Journal Article] Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN2023
- Author(s)
  Kobayashi Atsushi、Kihira Shunya、Akiyama Toru、Kawamura Takahiro、Maeda Takuya、Ueno Kohei、Fujioka Hiroshi
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 5 Issue: 1 Pages: 240-246
- DOI
  10.1021/acsaelm.2c01288
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01827, KAKENHI-PROJECT-20K05324
[Journal Article] Reaction of nitrous oxide and ammonia molecules at 4H-SiC/SiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math> interface: An ab initio study2022
- Author(s)
 Akiyama Toru、Shimizu Tsunashi、Ito Tomonori、Kageshima Hiroyuki、Shiraishi Kenji
- Journal Title
 
 Surface Science
 
 Volume: 723 Pages: 122102-122102
- DOI
 10.1016/j.susc.2022.122102
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-20K05324
[Journal Article] An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN2022
- Author(s)
  Niki Katsuhide、Akiyama Toru、Ito Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 5 Pages: 055503-055503
- DOI
  10.35848/1347-4065/ac5dab
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324
[Journal Article] Ab initio study for orientation dependence of nitrogen incorporation at 4H-SiC/SiO2 interfaces2022
- Author(s)
 Akiyama Toru、Shimizu Tsunashi、Ito Tomonori、Kageshima Hiroyuki、Chokawa Kenta、Shiraishi Kenji
- Journal Title
 
 Japanese Journal of Applied Physics
 
 Volume: 61 Issue: SH Pages: SH1002-SH1002
- DOI
 10.35848/1347-4065/ac5a96
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324
[Journal Article] Influence of oxygen-related defects on the electronic structure of GaN2022
- Author(s)
  Ohata Satoshi、Kawamura Takahiro、Akiyama Toru、Usami Shigeyoshi、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Sumi Tomoaki、Takino Junichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 6 Pages: 061004-061004
- DOI
  10.35848/1347-4065/ac6645
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324
[Journal Article] Structures and stability of GaN/Ga2O3 interfaces: a first-principles study2022
- Author(s)
  Hishiki Fumiaki、Akiyama Toru、Kawamura Takahiro、ITO Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 6 Pages: 065501-065501
- DOI
  10.35848/1347-4065/ac5e90
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324
[Journal Article] Effect of step edges on the adsorption behavior on vicinal AlN(0001) surface during metal-organic vapor phase epitaxy: An ab initio study2021
- Author(s)
  Akiyama Toru、Ohka Takumi、Nagai Katsuya、Ito Tomonori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 571 Pages: 126244-126244
- DOI
  10.1016/j.jcrysgro.2021.126244
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324
[Journal Article] Effect of surface structural change on adsorption behavior on InAs wetting layer surface grown on GaAs(001) substrate2021
- Author(s)
  Akiyama Toru、Yonemoto Kazuhiro、Hishiki Fumiaki、Ito Tomonori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 570 Pages: 126233-126233
- DOI
  10.1016/j.jcrysgro.2021.126233
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324
[Journal Article] Ab initio-based approach for the oxidation mechanisms at <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction2021
- Author(s)
 Shimizu Tsunashi、Akiyama Toru、Ito Tomonori、Kageshima Hiroyuki、Uematsu Masashi、Shiraishi Kenji
- Journal Title
 
 Physical Review Materials
 
 Volume: 5 Issue: 11 Pages: 114601-114601
- DOI
 10.1103/physrevmaterials.5.114601
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324
[Journal Article] Effective approach for calculating individual energy of step edges on polar AlN(0001) and GaN(0001) surfaces2021
- Author(s)
  Akiyama Toru、Nakatani Atsutaka、Shimizu Tsunashi、Ohka Takumi、Ito Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: 8 Pages: 080701-080701
- DOI
  10.35848/1347-4065/ac1128
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324
[Journal Article] Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation2021
- Author(s)
  Shimizu Tsunashi、Akiyama Toru、Nakamura Kohji、Ito Tomonori、Kageshima Hiroyuki、Uematsu Masashi、Shiraishi Kenji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBD10-SBBD10
- DOI
  10.35848/1347-4065/abdcb1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Computational discovery of stable phases of graphene and h-BN van der Waals heterostructures composed of group III-V binary compounds2021
- Author(s)
  Akiyama Toru、Kawamura Takahiro、Ito Tomonori
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 2 Pages: 023101-023101
- DOI
  10.1063/5.0032452
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Absolute surface energies of oxygen-adsorbed GaN surfaces2020
- Author(s)
  Kawamura Takahiro、Akiyama Toru、Kitamoto Akira、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 549 Pages: 125868-125868
- DOI
  10.1016/j.jcrysgro.2020.125868
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-18K04957
[Journal Article] Roles of growth kinetics on GaN non-planar facets under metalorganic vapor phase epitaxy condition2020
- Author(s)
  Seta Yuki、Akiyama Toru、Pradipto Abdul Muizz、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 6 Pages: 065505-065505
- DOI
  10.35848/1882-0786/ab9182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H-SiC/SiO2 interface2020
- Author(s)
  Shimizu Tsunashi、Akiyama Toru、Pradipto Abdul-Muizz、Nakamura Kohji、Ito Tomonori、Kageshima Hiroyuki、Uematsu Masashi、Shiraishi Kenji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SM Pages: SMMD01-SMMD01
- DOI
  10.35848/1347-4065/ab85dd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Effect of Film Thickness on Structural Stability for BAlN and BGaN Alloys: Bond‐Order Interatomic Potential Calculations2020
- Author(s)
  Hasegawa Yuya、Akiyama Toru、Pradipto Abdul-Muizz、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 8 Pages: 2000205-2000205
- DOI
  10.1002/pssb.202000205
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324
[Journal Article] First‐Principles Calculation of Bandgaps of Al1- xInxN Alloys and Short‐Period Al1-xInxN/Al1-yInyN Superlattices2020
- Author(s)
  Kawamura Takahiro、Fujita Yuma、Hamaji Yuya、Akiyama Toru、Kangawa Yoshihiro、Gorczyca Izabela、Suski Tadeusz、Wierzbowska Maigorzata, Krukowski Stanisiaw
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4 Pages: 1900530-1900530
- DOI
  10.1002/pssb.201900530
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Ab initio study for adsorption and desorption behavior at step edges of GaN(0001) surface2020
- Author(s)
  Akiyama Toru、Ohka Takumi、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 532 Pages: 125410-125410
- DOI
  10.1016/j.jcrysgro.2019.125410
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056
[Journal Article] Ab initio study for adsorption and desorption behavior at step edges of AlN(0001) and GaN(0001) surfaces2020
- Author(s)
 Akiyama Toru、Ohka Takumi、Nakamura Kohji、ITO Tomonori
- Journal Title
 
 Japanese Journal of Applied Physics
 
 Volume: 59 Issue: SG Pages: SGGK03-SGGK03
- DOI
 10.7567/1347-4065/ab6566
- NAID
 210000157893
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-17K05056
[Journal Article] Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions2020
- Author(s)
  Shimizu Tsunashi、Seta Yuki、Akiyama Toru、Pradipto Abdul Muizz、Nakamura Kohji、Ito Tomonori、Kusaba Akira、Kangawa Yoshihiro
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 2 Pages: 028003-028003
- DOI
  10.35848/1347-4065/ab68af
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-17K05056
[Journal Article] Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study2020
- Author(s)
  Shimizu Tsunashi、Akiyama Toru、Nakamura Kohji、Ito Tomonori、Kageshima Hiroyuki、Uematsu Masashi、Shiraishi Kenji
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 3 Pages: 37-46
- DOI
  10.1149/09803.0037ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs(001) substrate2020
- Author(s)
  Yonemoto Kazuhiro、Akiyama Toru、Muizz Pradipto Abdul、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 532 Pages: 125369-125369
- DOI
  10.1016/j.jcrysgro.2019.125369
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056
[Journal Article] A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate2020
- Author(s)
  Nagai Katsuya、Akiyama Toru、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 6 Pages: 155-164
- DOI
  10.1149/09806.0155ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: AnAb InitioStudy2020
- Author(s)
  Ohka Takumi、Akiyama Toru、Pradipto Abdul Muizz、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 20 Issue: 7 Pages: 4358-4365
- DOI
  10.1021/acs.cgd.0c00117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor‐Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies2020
- Author(s)
  Seta Yuki、Pradipto Abdul-Muizz、Akiyama Toru、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4 Pages: 1900523-1900523
- DOI
  10.1002/pssb.201900523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Growth mode in heteroepitaxial system from nano- and macro-theoretical viewpoints2019
- Author(s)
  Ito Tomonori, Akiyama Toru, Nakamura Kohji
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 512 Pages: 41-46
- DOI
  10.1016/j.jcrysgro.2019.01.028
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16K04962
[Journal Article] 計算科学から見たIII-V族ナノワイヤにおける回転双晶超格子構造の形成機構2019
- Author(s)
  秋山亨,伊藤智徳, 中村浩次
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 46
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(1?1?1) substrate2019
- Author(s)
  Akiyama Toru, Tsuboi Yuma, Nakamura Kohji, Ito Tomonori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 511 Pages: 89-92
- DOI
  10.1016/j.jcrysgro.2019.01.036
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical investigations on the growth mode of GaN thin films on an AlN(0001) substrate2019
- Author(s)
  Tsumuki Shinnosuke、Akiyama Toru、Pradipto Abdul-Muizz、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1009-SC1009
- DOI
  10.7567/1347-4065/ab06b1
- NAID
  210000155819
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-17K05056
[Journal Article] Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions2019
- Author(s)
  Seta Yuki、Pradipto Abdul Muizz、Akiyama Toru、Nakamura Kohji、Ito Tomonori、Kusaba Akira、Kangawa Yoshihiro
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1014-SC1014
- DOI
  10.7567/1347-4065/ab040a
- NAID
  210000155880
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17K05056
[Journal Article] Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth2019
- Author(s)
  Seta Yuki, Akiyama Toru, Pradipto Abdul Muizz, Nakamura Kohji, Ito Tomonori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 510 Pages: 7-12
- DOI
  10.1016/j.jcrysgro.2018.12.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical investigations on the structural stability and miscibility in BAlN and BGaN alloys: bond-order interatomic potential calculations2019
- Author(s)
  Hasegawa Yuya、Akiyama Toru、Pradipto Abdul-Muizz、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCB21-SCCB21
- DOI
  10.7567/1347-4065/ab06af
- NAID
  210000155982
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056
[Journal Article] Effects of surface and twinning energies on twining-superlattice formation in group III-V semiconductor nanowires: a first-principles study2019
- Author(s)
  Akiyama Toru, Nakamura Kohji, Ito Tomonori
- Journal Title
  
  Nanotechnology
  
  Volume: 30 Issue: 23 Pages: 234002-234002
- DOI
  10.1088/1361-6528/ab06d0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Modified approach for calculating individual energies of polar and semipolar surfaces of group-III nitrides2019
- Author(s)
  Akiyama Toru, Seta Yuki, Nakamura Kohji, Ito Tomonori
- Journal Title
  
  Physical Review Materials
  
  Volume: 3 Issue: 2
- DOI
  10.1103/physrevmaterials.3.023401
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Effect of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)2019
- Author(s)
  Yonemoto Kazuhiro、Akiyama Toru、Pradipto Abdul-Muizz、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SI Pages: SIIB25-SIIB25
- DOI
  10.7567/1347-4065/ab19ad
- NAID
  210000156688
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056
[Journal Article] An Interpretation for Defect-Induced Structural Transformation in SiC2018
- Author(s)
  Ito Tomonori、Akiyama Toru、Nakamura Kohji、Pradipto Abdul-Muizz
- Journal Title
  
  ECS Transactions
  
  Volume: 86 Issue: 7 Pages: 427-432
- DOI
  10.1149/08607.0427ecst
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Effects of lattice constraint on structures and electronic properties of BAlN and BGaN alloys: A first-principles study2018
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Applied Physics Express
  
  Volume: 11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056
[Journal Article] Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation2018
- Author(s)
  Toru Akiyama, Shinsuke Hori, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FR08-04FR08
- DOI
  10.7567/jjap.57.04fr08
- NAID
  210000149014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Effects of lattice constraint on structures and electronic properties of BAlN and BGaN alloys: A first-principles study2018
- Author(s)
  Akiyama Toru、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 2 Pages: 025501-025501
- DOI
  10.7567/apex.11.025501
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical Investigations for Surface Reconstructions of Submonolayer InAs Grown on GaAs(001)2018
- Author(s)
  Ito Tomonori、Akiyama Toru、Nakamura Kohji、Pradipto Abdul-Muizz
- Journal Title
  
  physica status solidi (a)
  
  Volume: 216 Pages: 1800476-1800476
- DOI
  10.1002/pssa.201800476
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16K04962
[Journal Article] An ab initio approach to polarity inversion of AlN and GaN films on AlN(000-1) substrate with Al overlayers: an insight from interface energies2018
- Author(s)
  Uchino Motoshi, Akiyama Toru, Nakamura Kohji, Ito Tomonori
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 9 Pages: 098001-098001
- DOI
  10.7567/jjap.57.098001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth2018
- Author(s)
  Kawamura Takahiro、Kitamoto Akira、Imade Mamoru、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi、Akiyama Toru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 11 Pages: 115504-115504
- DOI
  10.7567/jjap.57.115504
- NAID
  210000149765
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04957, KAKENHI-PLANNED-16H06418, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] Empirical interatomic potential approach to the stability of graphitic structure in BAlN and BGaN alloys2018
- Author(s)
  Hasegawa Yuya, Akiyama Toru, Pradipto Abdul Muizz, Nakamura Kohji, Ito Tomonori
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 504 Pages: 13-16
- DOI
  10.1016/j.jcrysgro.2018.09.016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Effects of polytypism on the thermoelectric properties of group-IV semiconductor nanowires: A combination of density functional theory and boltzmann transport calculations2017
- Author(s)
  Toru Akiyama, Takato Komoda, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Phys. Rev. Applied
  
  Volume: 8 Issue: 2
- DOI
  10.1103/physrevapplied.8.024014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface2017
- Author(s)
  Kaida Ryo、Akiyama Toru、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Journal Crystal Growth
  
  Volume: 468 Pages: 919-922
- DOI
  10.1016/j.jcrysgro.2016.10.064
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04962, KAKENHI-PLANNED-16H06418
[Journal Article] Effects of atomic arrangements on electronic structure of threading dislocations in III-nitride alloy semiconductor: A first-principles study2017
- Author(s)
  T. Akiyama, R. Sakaguchi, K. nakamura, and T. Ito
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 印刷中 Issue: 8
- DOI
  10.1002/pssb.201600694
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical investigations on the stability and electronic structures of two-dimensional group-IV ternary alloy monolayers2017
- Author(s)
  Toru Akiyama, Go Yoshimura, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Journal of Vacuum Science & Technology B
  
  Volume: 35 Issue: 4
- DOI
  10.1116/1.4980048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Systematic Theoretical Investigations of Polytypism in AlN2017
- Author(s)
  Ito Tomonori, AKiyama Toru, Nakamura Kohji
- Journal Title
  
  Physica Satus Solidi C
  
  Volume: 印刷中 Issue: 11 Pages: 1700212-1700212
- DOI
  10.1002/pssc.201700212
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Recent Progress in Computational Materials Science　for Semiconductor Epitaxial Growth2017
- Author(s)
  T. Ito and T. Akiyama
- Journal Title
  
  Crystals
  
  Volume: 7 Issue: 2 Pages: 46-46
- DOI
  10.3390/cryst7020046
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16K04962
[Journal Article] Systematic Theoretical Investigations for Crystal Structure Deformation in Group-III Nitrides: A First-Principles Study2017
- Author(s)
  Tsuboi Yuma、Akiyama Toru、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Physica Satus Solidi B
  
  Volume: 印刷中 Issue: 5 Pages: 1700446-1700446
- DOI
  10.1002/pssb.201700446
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Atomistic behaviour of (n ×3)-reconstructed areas of InAs-GaAs(001) surface at the growth condition2017
- Author(s)
  Konishi Tomoya、Tsukamoto Shiro、Ito Tomonoroi、Akiyama Toru、Kaida Ryo
- Journal Title
  
  Journal Crystal Growth
  
  Volume: 477 Pages: 104-109
- DOI
  10.1016/j.jcrysgro.2017.01.009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04962, KAKENHI-PLANNED-16H06418
[Journal Article] Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)2017
- Author(s)
  Ito Tomonori、Akiyama Toru、Nakamura Kohji
- Journal Title
  
  Physica Satus Solidi B
  
  Volume: 印刷中 Issue: 4 Pages: 1700241-1700241
- DOI
  10.1002/pssb.201700241
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16K04962
[Journal Article] Structures and Polarity of III-Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies2017
- Author(s)
  Akiyama Toru、Nakane Harunobu、Uchino Motoshi、Nakamura Kohji、Ito Tomonori
- Journal Title
  
  Physica Satus Solidi B
  
  Volume: 印刷中 Issue: 5 Pages: 1700329-1700329
- DOI
  10.1002/pssb.201700329
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K05056, KAKENHI-PLANNED-16H06418
[Journal Article] Structures and stability of polar GaN thin films on ScAlMgO4 substrate: An ab initio-based study2017
- Author(s)
  H. Nakane, T. Akiyama, K. Nakamura, and T. Ito
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 印刷中 Pages: 93-96
- DOI
  10.1016/j.jcrysgro.2016.09.019
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-16K04962
[Journal Article] Ab initio-based approach to novel behavior in semiconductor hetero-epitaxial growth2017
- Author(s)
  Ito Tomonori、Akiyama Toru、Nakamura Kohji
- Journal Title
  
  Journal Crystal Growth
  
  Volume: 477 Pages: 12-18
- DOI
  10.1016/j.jcrysgro.2017.03.010
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04962, KAKENHI-PLANNED-16H06418
[Journal Article] Effective approach for accurately calculating individual energy for polar heterojunction interfaces2016
- Author(s)
  T. Akiyama, H. Nakane, K. Nakamura, and T. Ito
- Journal Title
  
  Physical Review B
  
  Volume: 94 Issue: 11
- DOI
  10.1103/physrevb.94.115302
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06418
[Journal Article] Effective approach for accurately calculating individual energy for polar heterojunction interfaces2016
- Author(s)
  Toru Akiyama, Harunobu Nakane, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physical Review B
  
  Volume: 94
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16K04962
[Journal Article] Theoretical investigations for strain relaxation and growth mode of InAs thin layers on GaAs(111)A2016
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Condensed Matter
  
  Volume: 1 Issue: 1 Pages: 4-4
- DOI
  10.3390/condmat1010004
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16K04962
[Journal Article] Ab initio-based approach to structural change in InAs(001)-(2×3) wetting layer surfaces during MBE growth2015
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology
  
  Volume: 13
- NAID
  130005066302
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Systematic theoretical investigations on surface reconstructions and adatom kinetics on AlN semipolar surfaces2015
- Author(s)
  Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology
  
  Volume: 13
- NAID
  130005071334
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Effects of Zn doping on the surface structure and initial growth processes of InP thin film layers on InP(111)B substrate2015
- Author(s)
  Masataka Kato, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology
  
  Volume: 13
- NAID
  130005063562
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Empirical interatomic potential approach to the stability of graphitic structure in ANB8-N compounds2014
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 11 Pages: 110304-110304
- DOI
  10.7567/jjap.53.110304
- NAID
  210000144547
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Theoretical study for crystal structure deformation in ANB8-N compound2014
- Author(s)
  Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology
  
  Volume: 12 Pages: 79-82
- NAID
  130004933799
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Ab initio-based approach to N-pair formation on GaAs(001)-(2×4) surfaces2014
- Author(s)
  Tomonori Ito, Tatsuhiko Sugitani, Toru Akiyama, and Kohji Nakamura
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology
  
  Volume: 12 Pages: 6-10
- NAID
  130004438863
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Doping effects on polytypism in semiconductor nanowires: A first-principles study2014
- Author(s)
  Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology
  
  Volume: 12 Pages: 18-22
- NAID
  130004438865
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations2014
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito, and A. J. Freeman
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 13
- DOI
  10.1063/1.4870095
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Systematic Theoretical Investigations for Miscibility of GaNxAs1-x-yBiy Thin Films2014
- Author(s)
 Takahirao Makihara, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
 
 e-J. Surf. Sci. Nanotechnol.
 
 Volume: 12 Issue: 0 Pages: 171-174
- DOI
 10.1380/ejssnt.2014.171
- NAID
 130004933811
- ISSN
 1348-0391
- Language
 English
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
 KAKENHI-PROJECT-24560025
[Journal Article] Theoretical Investigations for the Formation of InN/GaN(0001) Heterostructures2014
- Author(s)
  Ayako Ito, Tatsuhiko Sugitani, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  e-J. Surf. Sci. Nanotechnol.
  
  Volume: 12 Issue: 0 Pages: 136-140
- DOI
  10.1380/ejssnt.2014.136
- NAID
  130004677839
- ISSN
  1348-0391
- Language
  English
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Systematic theoretical investigations for atomic arrangements of GaNxAs1-x nanowires surrounded by semiconductor template2014
- Author(s)
  Masataka Kato, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology
  
  Volume: 12 Pages: 45-48
- NAID
  130004933793
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Ab initio-based approach to incorporation of nitrogen on GaAs(001) surfaces2013
- Author(s)
  Tatsuhiko Sugitani, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 29-33
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach2013
- Author(s)
  Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
- Journal Title
  
  Materials 2013
  
  Volume: 6 Issue: 8 Pages: 3309-3361
- DOI
  10.3390/ma6083309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23540361, KAKENHI-PROJECT-24560025
[Journal Article] Systematic theoretical investigations for the polytypism in SiC2013
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 10 Issue: 5 Pages: 857-860
- DOI
  10.1002/pssc.201200570
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Growth of side facets in InP nanowires : First-principles-based approach2013
- Author(s)
  山下智樹、秋山亨、中村浩次、伊藤智徳
- Journal Title
  
  Surface Science
  
  Volume: 609 Pages: 207-214
- DOI
  10.1016/j.susc.2012.12.009
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J03824, KAKENHI-PROJECT-24560025
[Journal Article] Ab initio-based approach to initial incorporation of Bi on GaAs(001)-c(4×4) α surfaces2013
- Author(s)
  Isao Murase, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 未定 Pages: 21-24
- DOI
  10.1016/j.jcrysgro.2012.12.047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Ab initio-based approach to elemental elemental nitridation process of α-Al2O32013
- Author(s)
  Yasutaka Saito, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 362 Pages: 29-32
- DOI
  10.1016/j.jcrysgro.2012.01.048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Ab initio-based approach to elemental growth process of In adatom on the InAs wetting layer grown on GaAs2013
- Author(s)
  Tomonori Ito, Kosuke Ogasawara, Tatsuhiko Sugitani, Toru Akiyama, and Kohji Nakamura
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 362 Pages: 2-5
- DOI
  10.1016/j.jcrysgro.2012.07.030
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Theoretical investigation on temperature and pressure dependence of structural stability of InP thin layers grown on InP(111)A surface2013
- Author(s)
  山下智樹、秋山亨、中村浩次、伊藤智徳
- Journal Title
  
  Surface Science
  
  Volume: 610 Pages: 16-21
- DOI
  10.1016/j.susc.2012.12.019
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J03824, KAKENHI-PROJECT-24560025
[Journal Article] Nitridation of Al2O3 surfaces: chemical and structural change triggered by oxygen desorption2013
- Author(s)
  Toru Akiyama, Yasutaka Saito, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  Physical Review Letters
  
  Volume: 110 Issue: 2
- DOI
  10.1103/physrevlett.110.026101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Diffusion of carbon oxides in SiO2 during SiC oxidation: A first-principles study2013
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, and Masashi Uematsu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 113
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001)2013
- Author(s)
  Tomonori Ito, Kentaro Hirai, Toru Akiyama, and Kohji Nakamura
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 13-16
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Ab initio-based approach to initial incorporation of Bi on GaAs(001)-c(4×4) surfaces2013
- Author(s)
  Isao Murase, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 21-24
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] 第一原理による多形決定のメカニズム解明2013
- Author(s)
  伊藤智徳，秋山亨，中村浩次
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 40 Pages: 11-19
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Reconstructions on AlN nonpolar surfaces in the presence of hydrogen2012
- Author(s)
  Toru Akiyama, Daisuke Obara, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 4R Pages: 048002-048002
- DOI
  10.1143/jjap.51.048002
- NAID
  210000140468
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Reconstructions on AlN polar surfaces under hydrogen rich conditions2012
- Author(s)
  Toru Akiyama, Daisuke Obara, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 1R Pages: 018001-018001
- DOI
  10.1143/jjap.51.018001
- NAID
  210000140036
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based approach to GaN surfaces : Reconstruction, adsorption, and incorporation2012
- Author(s)
  T. Ito, T. Akiyama, K. Nakamura
- Journal Title
  
  Semicond. Sci. Technology
  
  Volume: 27
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Effects of interlayer interactions on structural stability and electronic structures of twin boundary interfaces in CaCO_3 calcite2012
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Journal of Physical Chemistry
  
  Volume: 116 Issue: 1 Pages: 987-993
- DOI
  10.1021/jp209647b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Stability of nitrogen incorporated Al_2O_3 surfaces : Formation of AlN layers by oxygen desorption2012
- Author(s)
  Toru Akiyama, Yasutaka Saito, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Surface Science
  
  Volume: 606 Issue: 3-4 Pages: 221-225
- DOI
  10.1016/j.susc.2011.09.018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] As-rich (2×2) surface reconstruction on GaAs(111)A2012
- Author(s)
  Akihiro Ohtake, Toru Akiyama, and Tomonori Ito
- Journal Title
  
  Surface Science
  
  Volume: 606 Issue: 23-24 Pages: 1864-1870
- DOI
  10.1016/j.susc.2012.07.029
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Ab initio-based approach to GaN surfaces : Reconstruction, adsorption, and incorporation2012
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 27 Issue: 2 Pages: 024010-024010
- DOI
  10.1088/0268-1242/27/2/024010
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based study for adatom kinetics on AlN(0001) surfaces during metal-organic vapor-phase epitaxy growth2012
- Author(s)
  Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Journal Title
  
  Applied Physics Letters
  
  Volume: 100 Issue: 25
- DOI
  10.1063/1.4729479
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560025
[Journal Article] Stability of nitrogen incorporated Al_20_3 surfaces : Formation of AlN layers by oxygen desorption2012
- Author(s)
  T. Akiyama, Y. Saito, K. Nakamura, T. Ito
- Journal Title
  
  Surf. Sci
  
  Volume: 606 Pages: 221-225
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based approach to the adsorption behavior fo In on InAs wetting layer grown on GaAs(001) substrate2011
- Author(s)
  K. Ogasawara, T. Ito, T. Akiyama, K. Nakamura
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 8 Pages: 245-247
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] エピタキシャル成長素過程への量子論的アプローチ2011
- Author(s)
  秋山亨, 中村浩次, 伊藤智徳
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 38 Pages: 137-143
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrates2011
- Author(s)
  T. Ito, H. Nakano, T. Akiyama, K. Nakamura
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 8 Pages: 1569-1572
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Stability of carbon incorporated semipolar GaN (1-101) surfaces2011
- Author(s)
  Toru Akiyama, Kohji Nakamura Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 8R Pages: 080216-080216
- DOI
  10.1143/jjap.50.080216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Stability of carbon incorporated semipolar GaN(1-101) surfaces2011
- Author(s)
  T. Akiyama, K. Nakamura, T. Ito
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Theoretical Investigation of Effect of Side Facets on Adsorption-Desorption Behaviors of In and P Atoms at Top Layers in InP Nanowires2011
- Author(s)
  山下智樹、秋山亨、中村浩次、伊藤智徳
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 5R Pages: 055001-055001
- DOI
  10.1143/jjap.50.055001
- NAID
  40018812638
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J03824, KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based approach to the adsorption behavior to In on InAs wetting layer grown on GaAs(001) substrate2011
- Author(s)
  Kosuke Ogasawara, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8 Pages: 245-247
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Theoretical investigations for the polytypism in silicon carbide : Contribution of the vacancy formation2011
- Author(s)
  Tomonori Ito, Tomoyuki Kondo, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8 Pages: 583-585
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Empirical potential approach to the epitaxial relationship between AlN thin films and Si (001) substrates2011
- Author(s)
  Tomonori Ito, Haruo Nakano, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8 Issue: 5 Pages: 1569-1572
- DOI
  10.1002/pssc.201000865
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Theoretical investigations for the polytypism in semiconductors2011
- Author(s)
  T. Ito, T. Kondo, T. Akiyama, K. Nakamura
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 318 Pages: 141-144
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based approach to adsorption-desorption behavior on the InAs(111) A surface heteroepitaxially grown on GaAs substrate2011
- Author(s)
  T. Ito, N. Ishimure, T. Akiyama, K. Nakamura
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 318 Pages: 72-75
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Atomic and electronic structure of CaCO_3 surfaces2011
- Author(s)
  T. Akiyama, K. Nakamura, T. Ito
- Journal Title
  
  Phys. Rev
  
  Volume: 84
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Atomic and electronic structure of CaCO_3 surfaces2011
- Author(s)
  Toru Akiyama, Kohji Nakamura Tomonori Ito
- Journal Title
  
  Physical Review B
  
  Volume: 84 Issue: 8
- DOI
  10.1103/physrevb.84.085428
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Theoretical investigation for the strain effect on surface structure of InAs(111)A2010
- Author(s)
  Naoki Ishimure, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2731-2734
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Surface reconstruction and magnesium incorporation on semipolar GaN(1-101) surfaces2010
- Author(s)
  T. Akiyama, Y. Saito, K. Nakamura, T. Ito
- Journal Title
  
  Phys. Rev. B
  
  Volume: 81
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based Monte Carlo simulation study for the structural stability of AlN grown on 4H-SiC (11-20)2010
- Author(s)
  Tomonori Ito, Takumi Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  e-Journal of Surface Science and Nanotethnology 8
  
  Pages: 52-56
- NAID
  130004934094
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Theoretical investigations of polytypism in AlN thin films2010
- Author(s)
  T. Ito, T. Ito, D. Ammi, T. Akiyama, K. Nakamura
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: 207 Pages: 1431-1434
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] A first-principles surface-phase diagram study for Si-adsorption processes on GaAs(111)A surface under low As-pressure condition2010
- Author(s)
  Toru Akiyama, Hiroaki Tatematsu, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Surface Science 604
  
  Pages: 171-174
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Band alignment tuning in twin-plane superlattice of semiconductor nanowires2010
- Author(s)
  T. Akiyama, Y. Saito, K. Nakamura, T. Ito
- Journal Title
  
  Nano Lett
  
  Volume: 10 Pages: 4614-4618
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Surface reconstructions on GaN and InN semipolar (20-21) surfaces2010
- Author(s)
  Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based approach to structural modulation of AlN on 4H-SiC (11-20) during MBE growth2010
- Author(s)
  Tomonori Ito, Takumi Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2788-2791
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Band alignment tuning in twin-plane superlattice of semiconductor nanowires2010
- Author(s)
  Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Nano Letters
  
  Volume: 10 Pages: 4614-4618
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Theoretical investigation for the strain effect on surface structure of InAs(111) A2010
- Author(s)
  N. Ishimure, T. Akiyama, K. Nakamura, T. Ito
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2731-2734
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Surface reconstruction and magnesium incorporation on semipolar GaN(1-101) surfaces2010
- Author(s)
  Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physical Review B
  
  Volume: 81
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based Monte Carlo simulation study for the structural stability of AlN grown on 4H-SiC(11-20)2010
- Author(s)
  T. Ito, T. Ito, T. Akiyama, K. Nakamura
- Journal Title
  
  e-J. Sur. Sci. Nanotchnology
  
  Volume: 8 Pages: 52-56
- NAID
  130004934094
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Effects of facet orientation on relative stability between zinc blende and wurtzite structures in III-V nanowires2010
- Author(s)
  Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based approach to structural modulation of AlN on 4H-SiC(11-20) during MBE growth2010
- Author(s)
  T. Ito, T. Ito, T. Akiyama, K. Nakamura
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2788-2791
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Stability and indium incorporation on In_<0.25>Ga_<0.75>N surfaces under growth conditions : First-principles calculations2010
- Author(s)
 Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
- Journal Title
 
 Japanese Journal of Applied Physics 49
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-21560032
[Journal Article] Theoretical investigation on the structural stability of GaAs nanowires with two different types of facets2010
- Author(s)
  Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2727-2730
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based study for adatom kinetics on semipolar GaN (11-22) surfaces2009
- Author(s)
  Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016890460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Role of Au/GaAs (111) interface on the wurtzite-structure formation during GaAs nanowire grown by vapor-liquid-solid mechanism2009
- Author(s)
  Toru Akiyama, Yuya Haneda, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physical Review B 79
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Stability of magnesium-incorporated semipolar (10-1-1) surfaces2009
- Author(s)
  Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Structures and electronic states of Mg-incorporated InN surfaces : First-principles pseudopotential calculations2009
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito, J.-H.Song, A.J.Freeman
- Journal Title
  
  Physical Review B 80
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] An empirical potential approach to the formation of InAs-stacking-fault tetrahedron in InAs/GaAs (111)2009
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura, Kiyoshi Kanisawa
- Journal Title
  
  Proceedings of COMMAD '08 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Abinitio-based apProach to structural change of compound semiconductor surfaces during MBE growth2009
- Author(s)
  T.Ito, T.Akiyama, and K.Nakamura
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 698-701
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Theoretical approach to structural stability of c-GaN : How to grow cubic GaN2009
- Author(s)
  Yoshihiro Kangawa, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Koichi Kakimoto
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3106-3109
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Surface reconstructions on GaN and InN semipolar (11-22) surfaces2009
- Author(s)
  Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016890443
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films2009
- Author(s)
  Tomonori Ito, Naoki Takasu, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Applied Surface Science 256
  
  Pages: 1218-1221
- NAID
  120002223760
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Theoretical investigation on the structural stability of GaP nanowires with {111} facets2009
- Author(s)
  Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Applied Surface Science 256
  
  Pages: 1054-1057
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth2009
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 698-701
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Reconstructions of GaN and InN semipolar (10-1-1) surfaces2009
- Author(s)
  Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics 48
- NAID
  40016796017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] An ab initio-based approach to the stability of GaN(0001) surfaces under Ga-rich conditions2009
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 3093-3096
- NAID
  120002223761
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] Systematic theoretical investigation for adsorption behavior of Al and N atoms on 4H-SiC (11-20) surfaces2009
- Author(s)
  Takumi Ito, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Applied Surface Science 256
  
  Pages: 1164-1167
- NAID
  120002223755
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560032
[Journal Article] 化合物半導体ナノワイヤにおける閃亜鉛鉱-ウルツ鉱構造多形と回転双晶形成:計算科学的アプローチ"2008
- Author(s)
  秋山亨, 中村浩次, 伊藤智徳
- Journal Title
  
  日本結晶成長学会誌 34
  
  Pages: 233-239
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Impact of oxidation-induced strain on microscopic processes related to oxidation reaction at the SiO_2/Si(100) interface2008
- Author(s)
  T. Akiyama, T. Ito, H. Kageshima, and M. Uematsu
- Journal Title
  
  Phys. Rev. B77, 115356
  
  Pages: 1-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Stress Dependence of Oxidation Reaction at SiO_2/Si Interfaces during Silicon Thermal Oxidation2008
- Author(s)
  T. Akiyama, H. Kageshima, M. Uematsu, and T. Ito
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 7089-7093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Empirical potential approach to the formation of 3C-SiC(111)/Si(110)2008
- Author(s)
  Tomonori Ito, Toru Kanno, Toru Akiyama, Kohji Nakamura, Atsuhi Konno, Maki Suemitsu
- Journal Title
  
  Applied Physics Express 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Empirical potential approach to the fbrmation of 3C-SiC(111)/Si(llO)2008
- Author(s)
  T.Ito, T.Kanno, T.Akiyama, K.Nakamura, A.Konno, and M.Suemitsu
- Journal Title
  
  Appl. Phys Express 1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Theoretical investigations fbr zinc blende-wurtzite polytypism in GaAs layers at Au/GaAs(111)interfaces2008
- Author(s)
  Y.Haneda, T.Akiyama, K.Nakamura, and T.Ito
- Journal Title
  
  Appl. Surf. Sci 254
  
  Pages: 7746-7749
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Ab initio-based approach to reconstructions of the InP(111)Asurface : Role of hydrogen atoms passivating surface dangling bonds2008
- Author(s)
  T.Akiyama, T.Kondo, H.Tatematsu, K.Nakamura, and T.Ito
- Journal Title
  
  Phys. Rev B78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Structures and electronic properties of Si nanowires grown along the [110]direction : Role of surface reconstruction2008
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Surface Science 602
  
  Pages: 3033-3037
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Impact of oxidation-induced strain on microscopic processes related to oxidation reaction at the SiO_2/Si(100)interface2008
- Author(s)
  Toru Akiyama
- Journal Title
  
  Physical Review B (掲載決定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] Theoretical investigations on the formation of wurtzite segments m group III-V semiconductor nanowires2008
- Author(s)
  Tomoki Yamashita, Kosuke Sano, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 7668-7671
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Ab initio-based approach to reconstructions of the InP(111)A surface : Role of hydrogen atoms passivating surface dangling bonds2008
- Author(s)
  Toru Akiyama, Tomoyuki Kondo, Hiroaki Tatematsu, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physical Review B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Ab initio-based approach to initial growth processes on GaAs(111)B-(2×2)surfaces : Self-surfactant effect of Ga adatoms revisited2008
- Author(s)
  Hiroaki Tatematsu, Kosuke Sano, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physical Review B 77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Theoretical investigation on structural stability of InN thin films on 3C-SiC(001)2008
- Author(s)
  Takumi Ito, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 7672-7675
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] An ab initio-based approach to phase diagram calculations for GaAs (001)-(2x4)γ surfaces2008
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 7663-7667
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Theoretical investigations for zinc blende-wurtzite polytypism in GaAs layers at Au/GaAs(111)interfaces2008
- Author(s)
  Yuya Haneda, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 7746-7749
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Stress dependence of oxidation reaction at SiO_2/Si interfaces during silicon thermal oxidation2008
- Author(s)
  Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu, Tomonori Ito
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 7089-7093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] An ab initio-based approach to phase diagram calculations for GaN(0001)2008
- Author(s)
  Tomonori Ito, Tomoyuki Nakamura, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Applied Surface Science 254
  
  Pages: 7659-7662
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Impact of oxidation induced strain on microscopic processes related to oxidation reaction at SiO_2Si(001)2008
- Author(s)
  Toru Akiyama, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu
- Journal Title
  
  Physical Review B 77
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Electronic structures and optical properties of GaN and ZnO nanowires from first principles2008
- Author(s)
  Toru Akiyama, A. J. Freeman, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Journal of Physics : Conference Series 100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Stress Dependence of Oxidation Reaction at SiO_2/Si Interfaces during Silicon Thermal Oxidation2008
- Author(s)
  Toru Akiyama
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 7089-7093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360027
[Journal Article] An ab initio-based approach to phase diagram calculations fbr GaAs(001)-(2x4)Y surfaces2008
- Author(s)
  T.Ito, T.Akiyama, and K.Nakamura
- Journal Title
  
  Appl. Surf. Sci 254
  
  Pages: 7663-7667
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] GaAs表面におけるGa原子のふるまい2008
- Author(s)
  伊藤智徳, 秋山亨, 中村浩次
- Journal Title
  
  表面科学 29
  
  Pages: 771-776
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] A nempirical potential approach to the structural stability of InAs stackingfault tetrahedron in InAs/GaAs(111)2007
- Author(s)
  H. Joe, T. Akiyama, K. Nakamura, K. Kanisawa, T. Ito
- Journal Title
  
  Journal of Crystal Growth 301-302
  
  Pages: 837-840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] A simple systematization of structural stability for A^NB^<8-N>compounds2007
- Author(s)
 T.Ito, T.Akiyama, and K.Nakamura
- Journal Title
 
 Jpn. J. Appl. Phys 46
 
 Pages: 345-347
- NAID
 10018705353
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18560020
[Journal Article] A Monte Carlo simulation study of twinning formation in InP nanowires2007
- Author(s)
  Kosuke Sano, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)2007
- Author(s)
  Hidenori Joe, T.Akiyama, K.Nakamura, K.Kanisawa, T.Ito
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Orientation and size dependence on structural stability in silicon nanowires: a transferable tight-inding calculation study2007
- Author(s)
  S, Maeda, T. Akiyama, K. Nakamura, T. Ito
- Journal Title
  
  Journal of Crystal Growth 301-302
  
  Pages: 871-875
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Simple systematization of structural stability for A^NB^<8-N> compounds2007
- Author(s)
 Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
 
 Japanese Journal of Applied Physics 46・1
 
 Pages: 345-347
- NAID
 10018705353
- Data Source
 KAKENHI-PROJECT-18560020
[Journal Article] Structures and energetics of ZnO,ZnS and ZnSe nanowires: an empirical approach2007
- Author(s)
  T. Akiyama, K. Sano, K. Nakamura, T. Ito
- Journal Title
  
  Proceedings of the 28th International Conference on the Physics of Semiconductors
  
  Pages: 55-56
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] A Monte Carlo simulation study of twinning formation in InP nanowires2007
- Author(s)
  K. Sano, T. Akiyama, K. Nakamura, T. Ito
- Journal Title
  
  Journal of Crysfal Growth 301-302
  
  Pages: 862-865
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Orientation and size dependence on structural stability in silicon nanowires : a transferable tight-binding calculation study2007
- Author(s)
  Shogo Maeda, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] An empirical interatomic potential approach to strural stabilityof ZnS and ZnSe nanowires2007
- Author(s)
  T. Akiyama, K. Sano, K. Nakamura, T. Ito
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 1782-1787
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Systematic theoretical investigations of compositional inhomogeneity in In_xGa_<1-x>N thin films on GaN(0001)2007
- Author(s)
 Tomonori Ito, Shingo Inahama, Toru Akiyama, Kohji Nakamura
- Journal Title
 
 Journal of Crystal Growth 298・1
 
 Pages: 186-189
- Data Source
 KAKENHI-PROJECT-18560020
[Journal Article] An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)2007
- Author(s)
  H.Joe, T.Akiyama, K.Nakamura, K.Kanisawa and T.Ito
- Journal Title
  
  J. Cryst. Growth 301-302
  
  Pages: 837-840
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Stacking sequence preference of pristine and hydrogen-terminated Sinanowires on Si (111) substrates2006
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Physical Review B 74・3
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides2006
- Author(s)
  K.Nakamura, Y.Kato, T.Akiyama, T.Ito, A.J.Freeman
- Journal Title
  
  Physical Review Letters 96
  
  Pages: 47206-47206
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Stmctural stability and electronic structures of InP nanowires : Role of surface dangling bonds on nanowire facets2006
- Author(s)
  T.Akiyama, K.Nakamura, and T.Ito
- Journal Title
  
  Phys. Rev B73
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Stacking sequence prefbrence of pristine and hydrogen-terminated Si nanowires on Si(111)substrates2006
- Author(s)
  T.Akiyama, K.Nakamura, and T.Ito
- Journal Title
  
  Phys. Rev B74
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Mechanism of oxide deformation during silicon thermal oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Physica B 376-377
  
  Pages: 407-410
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An empirical potential approach to wurtzite-zinc blende polytypism in group III-V semiconductor nanowires2006
- Author(s)
  T.Akiyama, K.Sano, K.Nakamura, T.Ito
- Journal Title
  
  Japanese Journal of Applied Physics Part 2 45
- NAID
  10018158441
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] A first-principles study of O_2 diffusion in compressively strained high-fensity silicon oxides2006
- Author(s)
  Toru Akiyama, Keiichi Kawamoto, Hiroyuki Kageshima, Masashi Uematsu, Kohji Nakamura, Tomonori Ito
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 311-314
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Transport mechanism of interfacial network forming atoms during silicon oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Japanese Journal of Applied Physics Part 1 45
  
  Pages: 694-694
- NAID
  40007140212
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Transport mechanism of interfacial network forming atoms during silicon oxidation2006
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi.
- Journal Title
  
  Jap.J.of Appl.Phys. 45
  
  Pages: 694-699
- NAID
  40007140212
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] A first-principles study of O_2 diffusion in compressively strained high-fensity silicon oxides2006
- Author(s)
  Toru Akiyama
- Journal Title
  
  Thin Solid Films 508
  
  Pages: 311-314
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical investigation of oxygen diffusion in compressively strained high-density α-quartz2005
- Author(s)
  T.Akiyama
- Journal Title
  
  Jap. J. of Appl. Phys. 44
  
  Pages: 7427-7429
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles study of excess Si-atom stability around Si oxide/Si interfaces2005
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Proceedings of the 27th International Conference on the Physics of Semiconductors
  
  Pages: 389-390
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Magnetic domain wall structures in free-standing Fe(110) monolayers2005
- Author(s)
  Y.Takeda, K.Nakamura, T.Akiyama, T.Ito
- Journal Title
  
  Applied Surface Science 244
  
  Pages: 485-485
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Magnetic and electronic structures of zinc-blende ferromagnetic/antiferromagnetic Interfaces2005
- Author(s)
  Y.Kato, T.Akiyama, K.Nakamura, T.Ito
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 4
  
  Pages: 58-58
- NAID
  130004933909
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Reaction mechanisms of oxygen at SiO_2/Si(100) interface2005
- Author(s)
  T.Akiyama
- Journal Title
  
  Surface Science 576
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical investigation of indium surface segregation in InGaN thin films2005
- Author(s)
  S.Inahama, T.Akiyama, K.Nakamura, T.Ito
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 3
  
  Pages: 503-503
- NAID
  130004438981
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Microscopic theory of oxygen reaction mechanisms at SiO_2/Si(100) interface2005
- Author(s)
  Toru Akiyama, Hiroyuki Kageshima, Tomonori Ito
- Journal Title
  
  Proceedings of the 27th International Conference on the Physics of Semiconductors
  
  Pages: 393-394
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Reaction mechanisms of oxygen at SiO_2/Si(100) interface2005
- Author(s)
  T.Akiyama, H.Kageshima
- Journal Title
  
  Surface Science 576
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical investigation of phase transition on GaAs(001)-c(4x4) surface2005
- Author(s)
  H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi, T.Ito
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 186-186
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical investigation of oxygen diffusion in compressively strained high-density α-quartz2005
- Author(s)
  T.Akiyama, H.Kageshima, M.Uematsu, T.Ito
- Journal Title
  
  Japanese Journal of Applied Physics Part 1 44
  
  Pages: 7427-7427
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical investigation of the structural stability of zinc blende GaN thin films2005
- Author(s)
  T.Araki, T.Akiyama, K.Nakamura, T.Ito
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 3
  
  Pages: 507-507
- NAID
  130004438980
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An empirical potential approach to dislocation formation and resultant structural stability in GaN_xAs_<1-x>2005
- Author(s)
 K.Kawamoto, T.Suda, T.Akiyama, K.Nakamura, T.Ito
- Journal Title
 
 Applied Surface Science 244
 
 Pages: 182-182
- Data Source
 KAKENHI-PROJECT-16560020
[Journal Article] Microscopic theory of oxygen reaction mechanisms at SiO_2/Si(100) interface2005
- Author(s)
  Toru Akiyama
- Journal Title
  
  Proceedings of the 27th International Conference on the Physics of Semiconductors
  
  Pages: 393-394
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An empirical potential approach to structural stability of GaN_xAs_<1-x> thin films on GaAs(111)2005
- Author(s)
 T.Ito, T.Suda, T.Akiyama, K.Nakamura
- Journal Title
 
 Applied Surface Science 244
 
 Pages: 170-170
- Data Source
 KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to phase diagram calculations for GaAs(001) surfaces2005
- Author(s)
  T.Ito, H.Ishizaki, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology 3
  
  Pages: 488-488
- NAID
  130004438978
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] An ab initio-based approach to Ga adatom migration on GaAs(n11)A-(001) non-planar surfaces2005
- Author(s)
  T.Ito, K.Asano, T.Akiyama, K.Nakamura, K.Shiraishi, A.Taguchi
- Journal Title
  
  Applied.Surface.Science 244
  
  Pages: 178-178
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical investigation of oxygen diffusion in compressively strained high-density α-quartz2005
- Author(s)
  T.Akiyama, H.Kageshima, M.Uematsu, T.Ito
- Journal Title
  
  Jap.J.of Appl.Phys. 44
  
  Pages: 7427-7429
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles analyses of O_2 molecules around ultrathin SiO_2/Si(100) interface2004
- Author(s)
  T.Akiyama, H.Kageshima, T.Ito
- Journal Title
  
  Jap.J.of Appl.Physi. 43
  
  Pages: 7903-7908
- NAID
  10014215293
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles analyses of O_2 molecules around ultrathin SiO_2/Si(100) interface2004
- Author(s)
  T.Akiyama
- Journal Title
  
  Jap. J. of Appl. Phys, 43
  
  Pages: 7903-7908
- NAID
  10014215293
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] First-principles analyses of O_2 molecules around ultrathin SiO_2/Si(100) interface2004
- Author(s)
  T.Akiyama, H.Kageshima, T.Ito
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7903-7908
- NAID
  10014215293
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces2004
- Author(s)
  H.Kageshima, M.Uematsu, K.Akagi, S.Tsuneyuki, T.Akiyama, K.Shiraishi
- Journal Title
  
  Jap.J.Appl.Phys.Part 1 43
  
  Pages: 8223-8226
- NAID
  10014216586
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560020
[Journal Article] Electronic structures and optical properties of GaN and ZnO nanowires from first principles
- Author(s)
  T. Akiyama, A. J. Freeman, K. Nakamura. T. Ito
- Journal Title
  
  Journal of Physics: Condensed Matter (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] An ab initio-baced approach to phase diagram calculations for GaN(0001)surfaces
- Author(s)
  T. Ito, T. Nakamura, T. Akiyama, K. Nakamura
- Journal Title
  
  Applied Surface Science (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] An ab initio-based approach to phase diagram calculations for GaAs(ooi)-(2x4)y surfaces
- Author(s)
  T. Ito, T. Akiyama, K. Nakamura
- Journal Title
  
  Applied Surface Science (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] Theoretical approach to structural stability of GaN : How to grow cubic GaN
- Author(s)
  Yoshihiro Kangawa, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Koichi Kakimoto
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Journal Article] An ab initio-based approach the stability of GaN(0001)surfaces under Ga-rich conditions
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Journal Title
  
  Journal of Crystal Growth (印刷中)
- NAID
  120002223761
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] AlNに格子整合する六方晶Nb2N超伝導体のエピタキシャル成長2023
- Author(s)
  小林篤, 紀平俊矢, 武田崇仁, 小林正起, 秋山亨, 河村貴宏, 原田尚之, 上野耕平, 藤岡洋
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 4H-SiC/SiO2界面におけるバンド配列の面方位依存性に関する理論検討2023
- Author(s)
  松田隼, 秋山亨, 畠山哲夫, 白石賢二, 中山隆史
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] キンクおよびステップを含むAlN(0001)表面の構造安定性および吸着・脱離の挙動に関する理論的検討2023
- Author(s)
  秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] α-Ga2O3/Al2O3超格子のバンド構造解析2023
- Author(s)
  河村貴宏, 伊藤智徳, 秋山亨
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Structural change of Ga2O3 induced by charged oxygen vacancies: a first-principles study2022
- Author(s)
  Toru Akiyama, Takahiro Kawamura, Tomonori Ito
- Organizer
  The 4th International Workshop on Gallium Oxide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 4H-SiC/SiO2界面での窒素酸化物およびアンモニアの反応機構の理論的検討2022
- Author(s)
  秋山亨, 清水紀志, 伊藤智徳, 影嶋博之, 白石賢二
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 窒化物半導体におけるピラミッド型インバージョンドメイン形成の理論解析2022
- Author(s)
  仁木克英, 秋山亨, 伊藤智徳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 4H-SiC/SiO2界面での窒素酸化物およびアンモニアの反応機構の理論的検討2022
- Author(s)
  秋山亨, 清水紀志, 伊藤智徳, 影嶋博之, 白石賢二
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] キンクおよびステップを含むAlN(0001)表面の構造安定性に関する理論的検討2022
- Author(s)
  秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  第51回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 2軸歪みによるβ-Ga2O3のバンドギャップ変化2022
- Author(s)
  河村貴宏, 秋山亨
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] GaN(0001)基板上に形成するGa2O3膜の構造安定性の理論解析: 膜厚依存性の検討2022
- Author(s)
  日紫喜文昭, 秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Ab initio-based approach for reaction process at 4H-SiC/SiO2 interfaces2022
- Author(s)
  Toru Akiyama, T. Shimizu, Tomonori Ito, H. Kageshima, K. Shiraishi
- Organizer
  2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulations
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 窒化物半導体におけるピラミッド型インバージョンドメイン形成の理論解析2022
- Author(s)
  仁木克英, 秋山亨, 伊藤智徳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] (AlxGa1-x)2O3混晶の構造安定性および混和性に関する理論的検討2022
- Author(s)
  藤田楓理, 秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 第一原理計算に基づくAlN(0001)表面上のGaN層の構造安定性評価2022
- Author(s)
  足道悠, 秋山亨, 伊藤智徳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Ab initio-based approach for reaction process at 4H-SiC/SiO2 interfaces2022
- Author(s)
  Toru Akiyama, T. Shimizu, Tomonori Ito, H. Kageshima, K. Shiraishi
- Organizer
  2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 第一原理計算に基づくAlN(0001)表面上のGaN層の構造安定性評価2022
- Author(s)
  足道悠, 秋山亨, 伊藤智徳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] GaN(0001)基板上に形成するGa2O3膜の構造安定性の理論解析: 膜厚依存性の検討2022
- Author(s)
  日紫喜文昭, 秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] First-principles calculation of optical properties of III-V nitride semiconductors2022
- Author(s)
  Takahiro Kawamura, Kouhei Basaki, Satoshi Ohata, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Effect of lattice constraint on structural stability and miscibility of (AlxGa1－x)2O3 films: A first-principles study2022
- Author(s)
  Shuri Fujita, Toru Akiyama, Takahiro Kawamura, and Tomonori Ito
- Organizer
  2022 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] First-principles study for self-limiting growth of GaN layers on AlN(0001) surface2022
- Author(s)
  Haruka Sokudo, Toru Akiyama, and Tomonori Ito
- Organizer
  2022 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 4H-SiC/SiO2界面での窒素酸化物およびアンモニアの反応機構の理論的検討2022
- Author(s)
  秋山亨, 清水紀志, 伊藤智徳, 影島博之, 白石賢二
- Organizer
  電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Ga2O3の構造安定性に対する酸素空孔の影響に関する理論的検討2022
- Author(s)
  秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Influence of biaxial strain on bandgaps of β-Ga2O32022
- Author(s)
  Takahiro Kawamura, Toru Akiyama
- Organizer
  The 4th International Workshop on Gallium Oxide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] (AlxGa1-x)2O3混晶の構造安定性および混和性に関する理論的検討2022
- Author(s)
  藤田楓理, 秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] ドライおよびウェット酸化種が共存する4H-SiC/SiO2界面での反応機構の理論的検討2021
- Author(s)
  清水紀志, 秋山亨, 伊藤智徳, 影島博之, 植松真司, 白石賢二
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるIII-V族化合物-グラフェン超格子の構造および電子状態解析2021
- Author(s)
  秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Effect of step edges on the adsorption behavior on vicinal AlN(0001) surface during metal-organic vapor phase epitaxy: an ab initio study2021
- Author(s)
  Toru Akiyama, Takumi Ohka, Katsuya Nagai, Tomonori Ito
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN2021
- Author(s)
  Katsuhide Niki, Toru Akiyama, and Tomonori Ito
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 4H-SiC/SiO2界面での窒素取り込みの面方位依存性に関する理論検討2021
- Author(s)
  秋山亨, 清水紀志, 伊藤智徳, 影嶋博之, 白石賢二
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Bandgaps of InN/AlN superlattices and AlInN alloys: Influence of composition and strain2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela　Gorczyca,　Tadeusz　Suski,　Malgorzata　Wierzbowska,　and　Stanislaw Krukowski
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるIII-V族化合物-グラフェン超格子の構造および電子状態解析2021
- Author(s)
  秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるAlN(0001)およびGaN(0001)表面でのステップ形成エネルギーの評価2021
- Author(s)
  秋山亨, 中谷淳嵩, 清水紀志, 相可拓巳, 伊藤智徳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Recent progress in computational materials science for III-nitride epitaxial growth: effects of growth kinetics on surface morphologies and nanostructures2021
- Author(s)
  Toru Akiyama, Yuki Seta, Takumi Ohka, Tomonori Ito
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio Study for Orientation Dependence of Nitrogen Incorporation at 4H-SiC/ SiO2 Interfaces2021
- Author(s)
  Toru Akiyama, Tsunashi Shimizu, Tomonori Ito, Hiroyuki Kageshima, Kenta Chokawa, Kenji Shiraishi
- Organizer
  2021 International Workshop on “Dielectric Thin Films for Future ULSI Devices: Science and Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 第一原理計算によるGaN/β-Ga2O3界面構造の理論解析2021
- Author(s)
  日紫喜文昭, 秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Recent progress in computational materials science for III-nitride epitaxial growth: effects of growth kinetics on surface morphologies and nanostructures2021
- Author(s)
  Toru Akiyama, Yuki Seta, Takumi Ohka, Tomonori Ito
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 第一原理計算によるGaN/β-Ga2O3界面構造の理論解析2021
- Author(s)
  日紫喜文昭, 秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] An ab initio-based approach for the formation of pyramidal inversion domain boundaries in highly Mg-doped GaN2021
- Author(s)
  Katsuhide Niki, Toru Akiyama, and Tomonori Ito
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Orientation dependence of growth mode for InN and InGaN on GaN substrate from nano- and macro-theoretical viewpoints2021
- Author(s)
  Katsuya Nagai, Toru Akiyama, Tomonori Ito
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Structures and stability of GaN/Ga2O3 interfaces: a first-principles study2021
- Author(s)
  Fumiaki Hishiki, Toru Akiyama, Takahiro Kawamura, and Tomonori Ito
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 界面エネルギー計算に基づく高濃度Mg添加GaNにおけるピラミッド型インバージョンドメイン形成の評価2021
- Author(s)
  仁木克英, 秋山亨, 伊藤智徳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Direct approach for calculating individual energy of step edges on polar AlN(0001) and GaN(0001) surfaces using density functional calculations2021
- Author(s)
  Toru Akiyama, Atsutaka Nakatani, Tsunashi Shimizu, Takumi Ohka, Tomonori Ito
- Organizer
  International Conference on Materials and Systems for Sustainability
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Influence of Lattice Distortion on the Effective Bandgaps of Polar InN/AlN Superlattices2021
- Author(s)
  Influence of LatticeKouhei Basaki, Akito Korei, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Structures and stability of GaN/Ga2O3 interfaces: a first-principles Study2021
- Author(s)
  Fumiaki Hishiki, Toru Akiyama, Takahiro Kawamura, and Tomonori Ito
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Influence of Lattice Distortion on the Effective Bandgaps of Polar InN/AlN Superlattices2021
- Author(s)
  Kouhei Basaki, Akito Korei, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるAlN(0001)およびGaN(0001)表面でのステップ形成エネルギーの評価2021
- Author(s)
  秋山亨, 中谷淳嵩, 清水紀志, 相可拓巳, 伊藤智徳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Change of the effective bandgaps of InN/AlN superlattices due to lattice distortion2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Magorzata Wierzbowska, and Stanisaw Krukowski
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A systematic approach for the interfacial reaction of O2 molecule under wet oxidation condition at 4H-SiC/SiO2 interface2021
- Author(s)
  T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K. Shiraishi
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 界面エネルギー計算に基づく高濃度Mg添加GaNにおけるピラミッド型インバージョンドメイン形成の評価2021
- Author(s)
  仁木克英, 秋山亨, 伊藤智徳
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Effect of step edges on the adsorption behavior on vicinal AlN(0001) surface during metal-organic vapor phase epitaxy: an ab initio study2021
- Author(s)
  Toru Akiyama, Takumi Ohka, Katsuya Nagai, Tomonori Ito
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 4H-SiC/SiO2界面での窒素取り込みの面方位依存性に関する理論検討2021
- Author(s)
  秋山亨, 清水紀志, 伊藤智徳, 影嶋博之, 白石賢二
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Recent progress in computational materials science for III-nitride epitaxial growth: effects of growth kinetics on surface morphologies and nanostructures2021
- Author(s)
  Toru Akiyama, Yuki Seta, Takumi Ohka, Tomonori Ito
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Ab initio Study for Orientation Dependence of Nitrogen Incorporation at 4H-SiC/SiO2 Interfaces2021
- Author(s)
  Toru Akiyama, Tsunashi Shimizu, Tomonori Ito, Hiroyuki Kageshima, Kenta Chokawa, Kenji Shiraishi
- Organizer
  2021 International Workshop on “Dielectric Thin Films for Future ULSI Devices: Science and Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Change of the effective bandgaps of InN/AlN superlattices due to lattice distortion2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Maigorzata Wierzbowska, and Stanisiaw Krukowski
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Invited
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] Direct approach for calculating individual energy of step edges on polar AlN(0001) and GaN(0001) surfaces using density functional calculations2021
- Author(s)
  Toru Akiyama, Atsutaka Nakatani, Tsunashi Shimizu, Takumi Ohka, Tomonori Ito
- Organizer
  International Conference on Materials and Systems for Sustainability
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Computational materials science for growth mode of semiconductor heteroepitaxial systems2021
- Author(s)
  Tomonori Ito and Toru Akiyama
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Orientation dependence of growth mode for InN and InGaN on GaN substrate from nano- and macro-theoretical viewpoints2021
- Author(s)
  Katsuya Nagai, Toru Akiyama, Tomonori Ito
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Effect of step edges on the adsorption behavior on vicinal AlN(0001) surface during metal-organic vapor phase epitaxy: an ab initio study2021
- Author(s)
  Toru Akiyama, Takumi Ohka, Katsuya Nagai, Tomonori Ito
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Computational materials science for growth mode of semiconductor heteroepitaxial systems2021
- Author(s)
  Tomonori Ito and Toru Akiyama
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] BAlN およびBGaN 混晶薄膜の構造安定性および混和性に関する理論的検討2020
- Author(s)
  長谷川裕也, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳
- Organizer
  第67 回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] GaN(0001)表面におけるステップ間相互作用に関する理論的検討2020
- Author(s)
  秋山亨, 相可拓巳, 瀬田雄基, 中村浩次, 伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation2020
- Author(s)
  T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K. Shiraishi
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] モンテカルロ計算によるGaAs(001)基板上InAsぬれ層の表面構造変化の理論検討2020
- Author(s)
  秋山亨, 米本和弘, 日紫喜文昭, A. -M. Pradipto, 中村浩次, 伊藤智徳
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] 4H-SiC/SiO2界面での酸化反応におけるウェット酸化種の影響に関する理論的検討2020
- Author(s)
  清水紀志, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳, 影島博之, 植松真司, 白石賢二
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate2020
- Author(s)
  Katsuya Nagai, Toru Akiyama, Kohji Nakamura and Tomonori Ito
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid State Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 自由エネルギー表式を用いたGaN(0001)基板上におけるInGaN薄膜の成長様式に関する理論的解析2020
- Author(s)
  永井勝也，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Computational prediction for stable structures of graphene van der Waals heterostructures composed of group-III-V compounds2020
- Author(s)
  T. Akiyama, K. Nakamura, T. Ito
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid State Science
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Effects of wet ambient on dry oxidation processes at 4H-SiC/SiO2 interface: an ab initio study2020
- Author(s)
  T. Shimizu, T. Akiyama, K. Nakamura, T. Ito, H. Kageshima, M. Uematsu, and K. Shiraishi
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid State Science
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 有機金属気相エピタキシー成長条件におけるAlN(0001)表面でのステップ端における吸着・脱離の挙動に関する理論的検討2020
- Author(s)
  相可拓巳，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Computational prediction for stable structures of graphene van der Waals heterostructures composed of group-III-V compounds2020
- Author(s)
  T. Akiyama, K. Nakamura, T. Ito
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid State Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324
[Presentation] モンテカルロ計算によるGaAs(001)基板上InAsぬれ層の表面構造変化の理論検討2020
- Author(s)
  秋山亨, 米本和弘, 日紫喜文昭, A. -M. Pradipto, 中村浩次, 伊藤智徳
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] モンテカルロ計算によるGaAs(001)基板上InAsぬれ層の表面構造変化の理論検討2020
- Author(s)
  秋山亨, 米本和弘, 日紫喜文昭, A. -M. Pradipto, 中村浩次, 伊藤智徳
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 自由エネルギー表式を用いたGaN(0001)基板上におけるInGaN薄膜の成長様式に関する理論的解析2020
- Author(s)
  永井勝也, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN(0001)表面におけるステップ間相互作用に関する理論的検討2020
- Author(s)
  秋山亨，相可拓巳，瀬田雄基，中村浩次，伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 第一原理計算を用いた4H-SiC/SiO2界面での酸化過程の検討：ウェット酸化の影響2020
- Author(s)
  清水紀志, 秋山亨, A. -M. Pradipto, 中村浩次, 伊藤智徳, 影島博之, 植松真司, 白石賢二
- Organizer
  2020年第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 4H-SiC/SiO2界面での酸化反応におけるウェット酸化種の影響に関する理論的検討2020
- Author(s)
  清水紀志, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN(0001)基板上におけるInNおよびInGaN薄膜の成長様式に関する理論的検討2020
- Author(s)
  永井勝也, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  第49回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] GaN(0001)基板上におけるInNおよびInGaN薄膜の成長様式に関する理論的検討2020
- Author(s)
  永井勝也, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  第49回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A Simple Approach to Growth Mode of InN and InGaN Thin Films on GaN(0001) Substrate2020
- Author(s)
  Katsuya Nagai, Toru Akiyama, Kohji Nakamura and Tomonori Ito
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid State Science
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 有機金属気相エピタキシー成長条におけるGaN複合ファセット上での吸着Ga原子の振る舞い2020
- Author(s)
  瀬田雄基，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] BAlN およびBGaN における二次元原子層膜形成に関する理論的検討2020
- Author(s)
  長谷川裕也, Abdul-Muizz Pradipto, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  第48 回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] BAlNおよびBGaN混晶薄膜の構造安定性および混和性に関する理論的検討2020
- Author(s)
  長谷川裕也, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 有機金属気相エピタキシー成長条件におけるAlN(0001)表面でのステップ端における吸着・脱離の挙動に関する理論的検討2020
- Author(s)
  相可拓巳, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InAs/GaAs(001)ぬれ層表面における成長初期過程に関する理論的検討：c(4×4)表面における吸着・脱離の挙動2019
- Author(s)
  米本和弘, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 有機金属気相エピタキシー成長条件下でのGaNナノ構造の形状評価：Wulffの作図法による検証2019
- Author(s)
  瀬田雄基, Abdul-Muizz Pradipto, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio study for adsorption and desorption behavior of wetting layer surface of InAs grown on GaAs(001) substrate2019
- Author(s)
  Kazuhiro Yonemoto, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio calculations for the effect of wet oxidation condition on the reaction processes at 4H-SiC/SiO2 interface2019
- Author(s)
  Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
- Organizer
  2019 International Workshop on Dielectric Thin Films for Future Electronic Devices & Science and Technology-
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Ab initio study for adsorption and desorption behavior at step edges of GaN(0001) surface2019
- Author(s)
  Toru Akiyama, Takumi Ohka, Kohji Nakamura, Tomonori Ito
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of AlN nonpolar planes during metalorganic vapor phase epitaxy2019
- Author(s)
  Tsunashi Shimizu, Yuki Seta, Abdul-Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Equilibrium morphologies of faceted GaN under metalorganic vapor phase epitaxy condition -Wulff construction using absolute surface energies2019
- Author(s)
  Yuki Seta, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Theoretical analysis for growth mode of AlGaN thin films on AlN(0001) substrates2019
- Author(s)
  Toru Akiyama, Shinnosuke Tsumuki, Kohji Nakamura, Tomonori Ito
- Organizer
  10th International Conference on Materials for Advanced Technologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] First-Principles Calculation of Band Gaps of Al1-xInxN Alloys and Short Period Al1-xInxN/Al1-yInyN Superlattices2019
- Author(s)
  Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, Yoshihiro Kangawa, Izabela　Gorczyca,　Tadeusz　Suski,　Magorzata　Wierzbowska,　and　Stanisaw Krukowski
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] MOVPE条件下におけるⅢ族窒化物半導体無極性面の熱力学解析2019
- Author(s)
  清水紀志, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳, 草場彰, 寒川義裕
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Systematic approach to developing empirical interatomic potentials for two-dimensional III-nitrides2019
- Author(s)
  Yuya Hasegawa, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Wedge-shape geometry法を用いたAlGaN(0001)における表面エネルギーの評価2019
- Author(s)
  永井勝也，積木伸之介，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Theoretical study for the adsorption-desorption behavior of stepped III-nitrides during MOVPE growth2019
- Author(s)
  Takumi Ohka, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Ⅲ族窒化物における表面・界面構造の理論解析2019
- Author(s)
  秋山亨，中村浩次，伊藤智徳
- Organizer
  第47 回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 有機金属気相エピタキシー成長中におけるGaN(0001)表面のステップ端での吸着・脱離の挙動に関する理論的検討2019
- Author(s)
  相可拓巳, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InN/AlN超格子構造のバンドギャップと格子歪みとの関係2019
- Author(s)
  浜地祐矢，河村貴宏，秋山亨，寒川義裕
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InAs/GaAs(001)ぬれ層表面におけるIn原子の吸着および脱離の挙動に関する理論的検討2019
- Author(s)
  米本和弘, Abdul-Muizz Pradipto, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Relationship between the band gap of InN/AlN SLs and lattice distortion2019
- Author(s)
  Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 計算材料科学で識る窒化物半導体のナノ構造・エピタキシャル成長2019
- Author(s)
  伊藤智徳, 秋山亨, 中村浩次
- Organizer
  第48 回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] 有機金属気相エピタキシー成長条件下におけるGaN複合ファセット上の吸着Ga原子の影響2019
- Author(s)
  瀬田雄基, Abdul-Muizz Pradipto, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations on structural stability of two-dimensional ultrathin films in group III-V materials2019
- Author(s)
  Toru Akiyama, Yuya Hasegawa, Kohji Nakamura, Tomonori Ito
- Organizer
  The 2019 MRS Spring Meeting & Exhibit
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] MOVPE条件下におけるⅢ族窒化物半導体無極性面の熱力学解析2019
- Author(s)
  清水紀志，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳，草場彰，寒川義裕
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Effects of adatom kinetics on facet formation of GaN during metalorganic vapor phase epitaxy2019
- Author(s)
  Yuki Seta, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio study for adsorption and desorption behavior at step edges of AlN(0001) and GaN(0001) surfaces2019
- Author(s)
  Toru Akiyama, Takumi Ohka, Kohji Nakamura, Tomonori Ito
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Systematic theoretical investigations for structural change of wetting layer surface in InAs/GaAs(001)2019
- Author(s)
  Tomonori Ito, Kazuhiro Yonemoto, Abdul-Muizz Pradipto, Toru Akiyama, Kohji Nakamura
- Organizer
  10th International Conference on Materials for Advanced Technologies
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Absolute surface energies of AlGaN(0001) under metaloroganic vapor epitaqxy2019
- Author(s)
  Katsuya Nagai, Shinnosuke Tsumuki, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlN(0001)基板上におけるAlGaN 薄膜の成長様式に関する理論的検討2019
- Author(s)
  積木伸之介，Abdul-Muizz Pradipto，秋山亨，中村浩次，伊藤智徳
- Organizer
  2019 年第66 回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of AlN nonpolar planes during metalorganic vapor phase epitaxy2019
- Author(s)
  Tsunashi Shimizu, Yuki Seta, Abdul-Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Absolute surface energies of AlGaN(0001) under metaloroganic vapor epitaxy2019
- Author(s)
  Katsuya Nagai, Shinnosuke Tsumuki, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Band gaps in short period superlattices consisted of different compositional AlInN alloys2019
- Author(s)
  Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 計算材料科学で識る窒化物半導体のナノ構造・エピタキシャル成長2019
- Author(s)
  伊藤智徳，秋山亨，中村浩次
- Organizer
  第48回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 有機金属気相エピタキシー成長条件下でのGaNナノ構造の形状評価：Wulffの作図法による検証2019
- Author(s)
  瀬田雄基，Abdul-Muizz Pradipto，秋山亨，中村浩次，伊藤智徳
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Wedge-shape geometry法を用いたAlGaN(0001)における表面エネルギーの評価2019
- Author(s)
  永井勝也, 積木伸之介, 秋山亨, Abdul-Muizz Pradipto, 中村浩次, 伊藤智徳
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InN/AlN超格子構造におけるバンドギャップに対する格子不整合の影響2019
- Author(s)
  浜地祐矢，河村貴宏，秋山亨，寒川義裕
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Systematic approach to developing empirical interatomic potentials for two-dimensional III-nitrides2019
- Author(s)
  Yuya Hasegawa, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  13th International Conference on Nitride Semiconductor
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 有機金属気相エピタキシー成長中におけるGaN(0001)表面のステップ端での吸着・脱離の挙動に関する理論的検討2019
- Author(s)
  相可拓巳，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Theoretical analysis for growth mode of AlGaN thin films on AlN(0001) substrates2019
- Author(s)
  Toru Akiyama, Shinnosuke Tsumuki, Kohji Nakamura, Tomonori Ito
- Organizer
  10th International Conference on Materials for Advanced Technologies
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Effects of adatom kinetics on facet formation of GaN during metalorganic vapor phase epitaxy2019
- Author(s)
  Yuki Seta, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] 有機金属気相エピタキシー成長条件下におけるGaN複合ファセット上の吸着Ga原子の影響2019
- Author(s)
  瀬田雄基，Abdul-Muizz Pradipto，秋山亨，中村浩次，伊藤智徳
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Equilibrium morphologies of faceted GaN under metalorganic vapor phase epitaxy condition -Wulff construction using absolute surface energies2019
- Author(s)
  Yuki Seta, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 二元系ANB8-N化合物における二次元原子層物質の構造安定性に関する理論的検討2019
- Author(s)
  秋山亨, 長谷川裕也, 中村浩次, 伊藤智徳
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study for the adsorption-desorption behavior of stepped III-nitrides during MOVPE growth2019
- Author(s)
  Takumi Ohka, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] 二元系ANB8-N 化合物における二次元原子層物質の構造安定性に関する理論的検討2019
- Author(s)
  秋山亨, 長谷川裕也, 中村浩次, 伊藤智徳
- Organizer
  2019 年秋季第80 回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] GaN(0001)表面におけるステップ端での吸着・脱離の挙動に関する理論的検討2019
- Author(s)
  秋山亨，相可拓巳，中村浩次，伊藤智徳
- Organizer
  2019 年第66 回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio calculations for the effect of wet oxidation condition on the reaction processes at 4H-SiC/SiO2 interface2019
- Author(s)
  Tsunashi Shimizu, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shiraishi
- Organizer
  2019 International Workshop on Dielectric Thin Films for Future Electronic Devices Science and Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] BAlNおよびBGaNにおける二次元原子層膜形成に関する理論的検討2019
- Author(s)
  長谷川裕也, Abdul-Muizz Pradipto, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Effects of adatom kinetics on facet formation of GaN during metalorganic vapor phase epitaxy2019
- Author(s)
  Yuki Seta, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Theoretical investigations on structural stability of two-dimensional ultrathin films in group III-V materials2019
- Author(s)
  Toru Akiyama, Yuya Hasegawa, Kohji Nakamura, Tomonori Ito
- Organizer
  The 2019 MRS Spring Meeting & Exhibit
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Theoretical analysis for growth mode of AlGaN thin films on AlN(0001) substrates2019
- Author(s)
  Toru Akiyama, Shinnosuke Tsumuki, Kohji Nakamura, Tomonori Ito
- Organizer
  10th International Conference on Materials for Advanced Technologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Structures and stability of two-dimensional materials composed of growth III-V and II-VI elements2019
- Author(s)
  Toru Akiyama, Yuya Hasegawa, Kohji Nakamura, Tomonori Ito
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Ab initio study for adsorption and desorption behavior at step edges of AlN(0001) and GaN(0001) surfaces2019
- Author(s)
  Toru Akiyama, Takumi Ohka, Kohji Nakamura, Tomonori Ito
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05268
[Presentation] Structures and stability of two-dimensional materials composed of growth III-V and II-VI elements2019
- Author(s)
  Toru Akiyama, Yuya Hasegawa, Kohji Nakamura, Tomonori Ito
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study for the adsorption-desorption behavior of stepped III-nitrides during MOVPE growth2019
- Author(s)
  Takumi Ohka, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Effects of surface reconstructions on misfit dislocation formation in InAs/GaAs(001)2018
- Author(s)
  Kazuhiro Yonemoto, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Computational approach for the stability of stepped GaN(0001) surfaces2018
- Author(s)
  Takumi Ohka, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] An interpretation for defect-induced structural transformation in SiC2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
- Organizer
  American International Meeting on Electrochemistry and Solid State Science
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Efects of Ag(111) substrate2018
- Author(s)
  Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
- Organizer
  The 20th International Conference on Molecular Beam Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] BAlNおよびBGaN混晶における結晶構造および電子状態：基板拘束の影響2018
- Author(s)
  秋山亨，中村浩次，伊藤智徳
- Organizer
  2018年春季第65回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for formation process of submonolayer InAs on GaAs(001) during MBE growth2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
- Organizer
  The 20th International Conference on Molecular Beam Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth condition2018
- Author(s)
  Yuki Seta, Abdul-Muizz Pradipto, Toru Akiyama, Kohji Nakamura, Tomonori Ito, A. Kusaba, Y. Kangawa
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InAs/GaAs(001)系ミスフィット転位形成に関する理論的検討：表面再構成の影響2018
- Author(s)
  米本和弘，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] BAlNおよびBGaN混晶における結晶構造および電子状態：基板拘束の影響2018
- Author(s)
  秋山亨，中村浩次，伊藤智徳
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] A new computational approach for structural stability and miscibility in BAlN and BGaN alloys2018
- Author(s)
  Yuya Hasegawa, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for strain relaxation and resultant growth mode in InAs/Gas heteroepitaxial system2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  45th Conference on the Physics and Chemistry of Surfaces and Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] New approach for calculating absolute surface energies of wurtzite structured group III-nitrides2018
- Author(s)
  Toru Akiyama, Yuki Seta, Kohji Nakamura, Tomonori Ito
- Organizer
  The 34th International Conference on the Physics of Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Efects of Ag(111) substrate2018
- Author(s)
  Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
- Organizer
  The 20th International Conference on Molecular Beam Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for strain relaxation and resultant growth mode in InAs/Gas heteroepitaxial system2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  The 45th Conference on the Physics and Chemistry of Surfaces and Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Empirical Interatomic potential approach to the stability of graphitic structure in BAlN and BGaN2018
- Author(s)
  Yuya Hasegawa, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A simple theoretical approach to growth mode of III-nitride thin films2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ⅲ族窒化物二次元原子層膜の構造安定性に関する理論的検討：膜厚依存性2018
- Author(s)
  秋山亨，坪井佑磨，長谷川裕也，中村浩次，伊藤智徳
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures2018
- Author(s)
  Toru Akiyama, Motoshi Uchino, Kohji Nakamura, Tomonori Ito, S. Xiao, Hideto Miyake
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] GaN(0001)面におけるステップの安定性に関する理論的研究2018
- Author(s)
  相可拓巳，Abdul-Muizz Pradipto，秋山亨，中村浩次，伊藤智徳
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlInN超格子構造におけるバンドギャップの組成依存性2018
- Author(s)
  藤田裕真，河村貴宏，鈴木泰之，秋山亨，寒川義裕
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth2018
- Author(s)
  Yuki Seta, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Recent progress in computational material science for growth of nitride semiconductors II2018
- Author(s)
  Toru Akiyama
- Organizer
  4th International Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] 窒化物半導体の有機金属気相エピタキシー成長における熱力学解析：半極性面の検討2018
- Author(s)
  瀬田雄基，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳，草場彰，寒川義裕
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるAlN/InN超格子のバンドギャップ解析2018
- Author(s)
  河村貴宏，藤田裕真，浜地祐矢，秋山亨，寒川義裕
- Organizer
  日本学術振興会　ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for formation process of submonolayer InAs on GaAs(001) during MBE growth2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
- Organizer
  The 20th International Conference on Molecular Beam Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Twinning superlattice formation in III-V compound semiconductor nanowires revisited: Effects of　surface and twinning energies2018
- Author(s)
  Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
- Organizer
  2018 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Empirical Interatomic potential approach to the stability of graphitic structure in BAlN and BGaN2018
- Author(s)
  Yuya Hasegawa, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] III族窒化物半導体超格子におけるバンドギャップの組成依存性2018
- Author(s)
  河村貴宏，藤田裕真，浜地祐矢，秋山亨，寒川義裕
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] New approach for calculating absolute surface energies of wurtzite structured group III-nitrides2018
- Author(s)
  Toru Akiyama, Yuki Seta, Kohji Nakamura, Tomonori Ito
- Organizer
  The 34th International Conference on the Physics of Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Investigation of Compositional Dependence of Band Gaps in AlN/InN and InN/GaN Superlattices2018
- Author(s)
  Yuma Fujita, Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Malgorzata Wierzbowska, Stanislaw Krukowski
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ⅲ族窒化物における極性および半極性の表面エネルギー計算アルゴリズムの構築2018
- Author(s)
  秋山亨，瀬田雄基，中村浩次，伊藤智徳
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical invesigations for growth mode of GaN thin films on AlN(0001) substrate2018
- Author(s)
  Shinnosuke Tsumuki, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for surface reconstructions of submonolayer InAs grown on GaAs(001)2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
- Organizer
  The 45th International Symposium on Compound Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] BAlN およびBGaN における構造安定性および混和性に関する理論的検討2018
- Author(s)
  長谷川裕也，秋山亨，Abdul-Muizz Pradipto，中村浩次，伊藤智徳
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Effective approach for calculating absolute surface energies of polar and semipolar planes for group-III nitrides under MOVPE conditions2018
- Author(s)
  Toru Akiyama, Yuki Seta, Kohji Nakamura, Tomonori Ito
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures2018
- Author(s)
  Toru Akiyama, Motoshi Uchino, Kohji Nakamura, Tomonori Ito, S. Xiao, Hideto Miyake
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] A new computational approach for structural stability and miscibility in BAlN and BGaN alloys2018
- Author(s)
  Yuya Hasegawa, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Compositional Dependence of Band Gaps in III-Nitride Semiconductor Superlattices2018
- Author(s)
  Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 自由エネルギー表式によるAlN(0001)基板上におけるGaN 薄膜の成長様式に関する理論的解析2018
- Author(s)
  積木伸之介，Abdul-Muizz Pradipto，秋山亨，中村浩次，伊藤智徳
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for surface reconstructions of submonolayer InAs grown on GaAs(001)2018
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura, Abdul-Muizz Pradipto
- Organizer
  The 45th International Symposium on Compound Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] Recent progress in computational material science for growth of nitride semiconductors I I2018
- Author(s)
  Toru Akiyama
- Organizer
  4th International Discussion on Growth of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy　growth2018
- Author(s)
  Yuki Seta, Toru Akiyama, Abdul-Muizz Pradipto, Kohji Nakamura, Tomonori Ito
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Systematic theoretical investigations for crystal structure deformation in group-III nitrides: A first-principles study2017
- Author(s)
  Yuma Tsuboi, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for strain relaxation and growth mode of InAs thin layers on GaAs(110)2017
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  44th International Symposium on Compound Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] Abrupt polarity inversion of AlN for second harmonics generation in DUV region2017
- Author(s)
  Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito, Ryuji Katayama
- Organizer
  International Workshop of UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] N極性AlN層における酸素起因極性反転の理論的検討2017
- Author(s)
  内野基，秋山亨，中村浩次，伊藤智徳
- Organizer
  2017年秋季第78回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Ab initio approach to polarity inversion of AlN caused by oxygen atoms2017
- Author(s)
  Motoshi Uchino, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hideto Miyake, Kazumasa Hiramatsu
- Organizer
  International Conference on Materials and Systems for Sustainability
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Ab initio-based approach to adsorption of In atom with strain relaxation on InAs wetting layer surface grown on GaAs(001)2017
- Author(s)
  Ryo Kaida, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  The 44th Conference on the Physics and Chemistry of Surfaces and Interfaces
- Place of Presentation
  Santa Fe（USA）
- Year and Date
  2017-01-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] N極性AlN層における酸素起因極性反転の理論的検討2017
- Author(s)
  内野基，秋山亨，中村浩次，伊藤智徳
- Organizer
  2017年秋季第78回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A simple interpretation for heteroepitaxial growth mode in terms of surface and interface2017
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  The 44th Conference on the Physics and Chemistry of Surfaces and Interfaces
- Place of Presentation
  Santa Fe（USA）
- Year and Date
  2017-01-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] Role of oxygen atoms on polarity inversion of N-polar AlN buffer layers: A first-principles theory2017
- Author(s)
  Motoshi Uchino, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hideto Miyake, Kazumasa Hiramatsu
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Systematic theoretical investigations for crystal structure deformation in group-III nitrides: A first-principles study2017
- Author(s)
  Yuma Tsuboi, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Structural stability and electronic structure of BAlN and BGaN alloy semiconductor: A first-principles study2017
- Author(s)
  Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
- Organizer
  International Workshop of UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] InAs/GaAs(110)系におけるひずみ緩和と成長様式に関する理論検討2017
- Author(s)
  伊藤智徳，海田諒，秋山亨，中村浩次
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] Effects of polytype and atomic arrangements on thermoelectric properties of SiGe nanowires: A combination of density functional theory and Boltzmann transport equation calculations2017
- Author(s)
  Toru Akiyama, Takato Komoda, Kohji Nakamura, Tomonori Ito
- Organizer
  10th Nanowire Growth Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Structures and energetics of faceted inversion domain boundaries in GaN and AlN doped with Mg2017
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  2017 MRS Fall Meeting & Exhibit
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Structural stability and electronic structure of BAlN and BGaN alloy semiconductor: A first-principles study2017
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  International Workshop of UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio approach to polarity inversion of AlN caused by oxygen atoms2017
- Author(s)
  Motoshi Uchino, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hideto Miyake, Kazumasa Hiramatsu
- Organizer
  International Conference on Materials and Systems for Sustainability
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 界面エネルギー計算に基づくAlN(000-1)基板上のAlNおよびGaNの極性反転に関する理論的検討2017
- Author(s)
  内野基，秋山亨，中村浩次，伊藤智徳
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio study for structural transformation in group III-nitirides2017
- Author(s)
  Yuma Tsuboi, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  International Conference on Materials and Systems for Sustainability
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Stability of graphitic structure in BAlN and BGaN alloy semiconductors2017
- Author(s)
  Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
- Organizer
  Advances in Functional Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Role of oxygen atoms on polarity inversion of N-polar AlN buffer layers: A first-principles theory2017
- Author(s)
  Motoshi Uchino, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Hideto Miyake, Kazumasa Hiramatsu
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Systematic theoretical investigations of polytypism in AlN2017
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] III族窒化物二次元原子層膜の構造変形に関する理論的研究2017
- Author(s)
  坪井佑磨，秋山亨，中村浩次，伊藤智徳
- Organizer
  2017年秋季第78回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation2017
- Author(s)
  Toru Akiyama, Shinnosuke Hori, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shirashi
- Organizer
  2017 International Conference on Solid Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for strain relaxation and growth mode of InAs thin layers on GaAs(110)2017
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  44th International Symposium on Compound Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation2017
- Author(s)
  Toru Akiyama, Shinnosuke Hori, Kohji Nakamura, Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Kenji Shirashi
- Organizer
  2017 International Conference on Solid Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] 4H-SiC/SiO2界面におけるウェット酸化反応過程に関する理論的検討2017
- Author(s)
  堀真輔，秋山亨，中村浩次，伊藤智徳，影島博之，植松真司，白石賢二
- Organizer
  2017年秋季第78回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Stability of graphitic structure in BAlN and BGaN alloy semiconductors2017
- Author(s)
  Toru Akiyama, Yuma Tsuboi, Kohji Nakamura, Tomonori Ito
- Organizer
  Advances in Functional Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Ab initio study for structural transformation in group III-nitirides2017
- Author(s)
  Yuma Tsuboi, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  International Conference on Materials and Systems for Sustainability
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Structures and polarity of III-nitrides: Phase diagram calculations using absolute surface and interface energies2017
- Author(s)
  Toru Akiyama, Harunobu Nakane, Motoshi Uchino, Kohji Nakamura, Tomonori Ito
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] Structures and polarity of III-nitrides: Phase diagram calculations using absolute surface and interface energies2017
- Author(s)
  Toru Akiyama, Harunobu Nakane, Motoshi Uchino, Kohji Nakamura, Tomonori Ito
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 界面・表面エネルギー計算によるIII-V族窒化物極性表面・界面構造状態図の作成2017
- Author(s)
  秋山亨，中根晴信，内野基，中村浩次，伊藤智徳
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 高濃度Mg添加AlNおよびGaNにおけるインバージョンドメイン形成に関する理論的検討：界面エネルギーによる評価2017
- Author(s)
  秋山亨，中村浩次，伊藤智徳
- Organizer
  2017年秋季第78回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 4H-SiC/SiO2界面におけるウェット酸化反応過程に関する理論的検討2017
- Author(s)
  堀真輔，秋山亨，中村浩次，伊藤智徳，影島博之，植松真司，白石賢二
- Organizer
  2017年秋季第78回応用物理学会学術講演会
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05056
[Presentation] InAs/GaAs(001)系の表面エネルギーと成長様式に関する理論的検討2016
- Author(s)
  海田諒，秋山亨，中村浩次，伊藤智徳
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] Theoretical study for structures and polarity of polar AlN/6H-SiC interfaces2016
- Author(s)
  H. Nakane, T. Akiyama, K. Nakamura, and T. Ito
- Organizer
  The 7th International Symposium on Advanced Science and technology of Silicon Materials
- Place of Presentation
  Kona（USA）
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface2016
- Author(s)
  R. Kaida, T. Akiyama, K. Nakamura, T. Ito
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Theoretical investigations for stability and polarity of GaN/ZnO interfaces2016
- Author(s)
  T. Akiyama, H. Nakane, K. Nakamura, and T. Ito
- Organizer
  The 7th International Symposium on Advanced Science and technology of Silicon Materials
- Place of Presentation
  Kona（USA）
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Atomistic evolution of (n×3)-reconstructed areas of InAs-GaAs(001) surface during MBE growth2016
- Author(s)
  Tomoya Konishi, Shiro Tsukamoto, Tomonori Ito, Toru Akiyama, Ryo Kaida
- Organizer
  The 19th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Montpellier（France）
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] AlN/SiCおよびGaN/SiC極性界面の構造安定性に関する理論的検討：歪み緩和の影響2016
- Author(s)
  秋山亨，中根晴信，中村浩次，伊藤智徳
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Size evolution of (n×3) reconstructed domains on growing InAs-GaAs(001) surface2016
- Author(s)
  Tomoya Konishi, Shiro Tsukamoto, Tomonori Ito, Toru Akiyama, Ryo Kaida
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] Theoretical study for misfit dislocation formation at InAs/GaAs(001) interface2016
- Author(s)
  Ryo Kaida, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] Theoretical investigations for polarity of AlN films on AlN(000-1) substrate: Effects of metal overlayer on interface stability2016
- Author(s)
  M. Uchino, T. Akiyama, K. Nakamura, and T. Ito
- Organizer
  The 7th International Symposium on Advanced Science and technology of Silicon Materials
- Place of Presentation
  Kona（USA）
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InAs/GaAs(111)A系におけるひずみ緩和と成長様式に関する理論検討2016
- Author(s)
  伊藤智徳，秋山亨，中村浩次
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] Structures and stability of polar GaN thin films on ScAlMgO4 substrate: An ab initio-based study2016
- Author(s)
  H. Nakane, T. Akiyama, K. Nakamura, and T. Ito
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] An ab initio approach for stability of polar GaN/SiC and AlN/SiC interfaces2016
- Author(s)
  T. Akiyama, T. Ito, and K. Nakamura
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Ab initio calculations for the polytypism in AlN2016
- Author(s)
  T. Ito, T. Akiyama, and K. Nakamura
- Organizer
  The 7th International Symposium on Advanced Science and technology of Silicon Materials
- Place of Presentation
  Kona（USA）
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] MBE成長中InAs-GaAs(001)表面における(n×3)再構成領域の変化2016
- Author(s)
  小西智也，塚本史郎，伊藤智徳，秋山亨，海田諒
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16K04962
[Presentation] ScAlMgO4/GaN界面構造安定性に対する量子論的アプローチ：Sc-O劈開面での検討2016
- Author(s)
  中根晴信，秋山亨，中村浩次，伊藤智徳
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Effects of atomic arrangements on electronic structure of threading dislocations in III-nitride alloy semiconductor: A first-principles study2016
- Author(s)
  T. Akiyama, R. Sakaguchi, T. Akiyama, and T. Ito
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando（USA）
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InAs/GaAs(001)系の表面エネルギーと成長様式に関する理論的検討2016
- Author(s)
  海田諒，秋山亨，中村浩次，伊藤智徳
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] A systematization of the structural stability in ANB8-N compounds based on the bond-order potential2013
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Organizer
  The 17th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  Warsaw
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] A8-NBN化合物の構造変化に関する理論的検討2013
- Author(s)
  竹本圭孝，伊藤智徳，秋山亨，中村浩次
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  京田辺
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Theoretical study for crystal structure deformation in ANB8-N compounds2013
- Author(s)
  Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Doping effect on polytypism in semiconductor nanowires: A first-principles study2013
- Author(s)
  Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] 側面に基板拘束のあるGaNxAs1-x-yナノワイヤの混和性に関する理論的研究2013
- Author(s)
  加藤真崇，秋山亨，中村浩次，伊藤智徳
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  京田辺
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Systematic theoretical investigations for miscibility of GaNxAs1-x-yBiy thin films2013
- Author(s)
  Takahirro Makihara, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Ab initio-based study for AlN thin film formation processes during nitridation of Al2O3 surfaces2013
- Author(s)
  Toru Akiyama, Yasutaka Siato, Kohji Nakamura, and Tomonori Ito, M. Weinert, and A. J. Freeman
- Organizer
  JASAP-MRS Joint Symposia
- Place of Presentation
  京田辺
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] InN/GaNヘテロ構造形成過程でのIII族元素の原子配置に関する理論的研究2013
- Author(s)
  伊藤綾子，秋山亨，中村浩次，伊藤智徳
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  京田辺
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Computational approach to thermal conductivity of InAs/InP core/shell nanowires2013
- Author(s)
  Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] GaAs(0001)-(2×4)表面におけるNペア形成に関する理論検討2013
- Author(s)
  伊藤智徳，杉谷龍彦，秋山亨，中村浩次
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  京田辺
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Systematic theoretical investigations for atomic arrangements of GaNxAs1-x nanowires surrounded by semiconductor templates2013
- Author(s)
  Masataka Kato, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] InAs/GaAs(001)ぬれ層表面での表面構造変化に関する量子論的アプローチ2013
- Author(s)
  平井健太郎，秋山亨，中村浩次，伊藤智徳
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  京田辺
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Theoretical investigations for the formation of InN/GaN(0001) heterostructures2013
- Author(s)
  Ayako Ito, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Ab initio-based approach to N-pair formation on GaAs(001)-(2×4) surfaces2013
- Author(s)
  Tomonori Ito, Tatsuhiko Sugitani, Toru Akiyama, and Kohji Nakamura
- Organizer
  The 12th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  つくば
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] GaNxAs1-x-y Biy/GaAs(001)薄膜の混和性に関する理論的検討2013
- Author(s)
  牧原敬宏，秋山亨，中村浩次，伊藤智徳
- Organizer
  2013年秋季第74回応用物理学会学術講演会
- Place of Presentation
  京田辺
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Ab initio-based approach to initial incorporation of Bi on GaAs(001)-c(4×4)αsurface2012
- Author(s)
  Isao Murase, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 17th International Conference on Molecular Bean Epitaxy
- Place of Presentation
  奈良
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] α-Al_2O_3表面における窒化初期過程に関する理論検討2012
- Author(s)
  秋山亨,斉藤康高,伊藤智徳,中村浩次
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] GaAs(001)表面上のN取り込みに対する量子論的アプローチ2012
- Author(s)
  杉谷龍彦，秋山亨，中村浩次，伊藤智徳
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] GaAs(001)表面におけるBi取り込みに対する量子論的アプローチ2012
- Author(s)
  村瀬功，秋山亨，中村浩次，伊藤智徳
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Computational approach for the growth process of semiconductor nanowires2012
- Author(s)
  Toru Akiyama
- Organizer
  Collaborative Conference on Crystal Growth 2012
- Place of Presentation
  Orland
- Invited
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] InP(111)A面上における成長初期過程のモンテカルロシミュレーション2012
- Author(s)
  山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 計算科学から見た半導体ナノワイヤの形成機構2012
- Author(s)
  秋山亨
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 半導体ナノワイヤの結晶構造におけるドーピング効果に関する理論的検討2012
- Author(s)
  秋山亨，山下智樹，中村浩次，伊藤智徳
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] GaAs(001)表面におけるBi原子の吸着に関する理論的研究2012
- Author(s)
  村瀬功, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] InAs/GaAs(001)-(n×3)ぬれ層表面構造に対する量子論的アプローチ2012
- Author(s)
  平井健太郎，秋山亨，中村浩次，伊藤智徳
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Ab initio-based investigations for incorporation of nitrogen on GaAs(001) surfaces2012
- Author(s)
  Tatsuhiko Sugitani, Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Organizer
  The 17th International Conference on Molecular Bean Epitaxy
- Place of Presentation
  奈良
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] A simple approach to the polytypism in boron nitride2012
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  American Physical Society March Meeting 2012
- Place of Presentation
  Boston
- Year and Date
  2012-02-29
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 計算科学から見た半導体ナノワイヤの形成機構2012
- Author(s)
  秋山亨
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  東京(招待講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] AlN(0001)表面上でのAlおよびN原子の挙動に関する量子論的アプローチ2012
- Author(s)
  秋山亨，中村浩次，伊藤智徳，宮川鈴衣奈，三宅秀人，平松和政
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] BNの構造多形に関する簡単な理解2012
- Author(s)
  伊藤智徳, 秋山亨, 中村浩次
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001)2012
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Organizer
  The 17th International Conference on Molecular Bean Epitaxy
- Place of Presentation
  奈良
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] α-Al_2O_3表面上の窒素吸着に関する量子論的アプローチ2011
- Author(s)
  斉藤康高,秋山亨,伊藤智徳,中村浩次
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab inito-based approach to elemental growth process of In adatom on the InAs wetting layer grown on GaAs2011
- Author(s)
  T. Ito, K. Ogasawara, T. Sugitani, T. Akiyama, K. Nakamura
- Organizer
  International Conference on Materials for Advanced Technologies
- Place of Presentation
  Singapore
- Year and Date
  2011-06-28
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] A simple approach to the polytypism in SiC2011
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  International Conference on Materials for Advanced Technologies
- Place of Presentation
  Singapore
- Year and Date
  2011-06-27
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Structural stability of Mn-doped GaInAs and GaInN alloys2011
- Author(s)
  Masahiro Miyake, Kohji Nakamura, Toru Akiyama, Tomonori Ito
- Organizer
  International Conference on Materials for Advanced Technologies
- Place of Presentation
  Singapore
- Year and Date
  2011-06-27
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to elemental nitridation process of α-Al_2O_32011
- Author(s)
  Yasutaka Saito, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  International Conference on Materials for Advanced Technologies
- Place of Presentation
  Singapore
- Year and Date
  2011-06-27
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] α-Al_2O_3(0001)表面での窒素取り込みにおける反応種依存性の理論検討2011
- Author(s)
  秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Structural stability and electronic properties in Al_2O_3 and CrO_3 mixed crystals"2011
- Author(s)
  Yukie Kitaoka, Kohji Nakamura, Toru Akiyama, Tomonori Ito
- Organizer
  International Conference on Materials for Advanced Technologies
- Place of Presentation
  Singapore
- Year and Date
  2011-06-27
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to elemental growth processes of InAs wetting layer on GaAs(001)2011
- Author(s)
  T. Ito, T. Sugitani, T. Akiyama, K. Nakamura
- Organizer
  2nd Nano Today Conference
- Place of Presentation
  Kohara
- Year and Date
  2011-12-13
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] GaAs(001)基板上InAs表面におけるIn原子のマイグレーションに対するモンテカルロシミュレーション2011
- Author(s)
  杉谷龍彦, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Growth processes of InP with wurtzite and zinc blende structures on (111) A surface2011
- Author(s)
  Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  International Conference on Materials for Advanced Technologies
- Place of Presentation
  Singapore
- Year and Date
  2011-06-29
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to elemental growth process of In adatom on the InAs wetting layer grown on GaAs2011
- Author(s)
  Tomonori Ito, Kosuke Ogasawara, Tatsuhiko Sugitani, Toru Akiyama, Kohji Nakamura
- Organizer
  International Conference on Materials for Advanced Technologies
- Place of Presentation
  Singapore
- Year and Date
  2011-06-28
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] GaAs(001)上InAsぬれ層形成過程に関する一考察2011
- Author(s)
  伊藤智徳,秋山亨,中村浩次
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initobased investigations for In adatom on the InAs(111) A surface2011
- Author(s)
  T. Ito, T. Akiyama, K. Nakamura
- Organizer
  International Workshop on Atomic-Scale Manipulation and Spectroscopy of Surface and Nanostructures
- Place of Presentation
  厚木
- Year and Date
  2011-10-13
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Atomic and electronic structures of calcium carbonate surfaces : A first-principles study2011
- Author(s)
 Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
 6^<th> International Symposium on Surface Science
- Place of Presentation
 東京
- Year and Date
 2011-12-13
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based investigations for In adatom on the InAs(111)A surface2011
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
  International Workshop on Atomic-Scale Manipulation and Spectroscopy of Surfaces and Nanostructures
- Place of Presentation
  厚木(招待講演)
- Year and Date
  2011-10-13
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Theoretical investigation for nitrogen-incorporated α-Al_2O_3 surfaces2011
- Author(s)
 Yasutaka Saito, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
 6^<th> International Symposium on Surface Science
- Place of Presentation
 東京
- Year and Date
 2011-12-13
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] InP(111)A面上における成長初期過程に対するモンテカルロシミュレーション2011
- Author(s)
  山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] α-Al_2O_3(0001)表面上の窒素吸着に関する量子論的アプローチ2011
- Author(s)
  斉藤康高, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to elemental formation processes of InAs wetting layer on GaAs(001)2011
- Author(s)
 Tomonori Ito, Tatsuhiko Sugitani, Toru Akiyama, Kohji Nakamura
- Organizer
 2^<nd> Nano Today Conference
- Place of Presentation
 Kohara
- Year and Date
 2011-12-13
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] α-Al_2O_3(1-102)表面における窒化に関する量子論的アプローチ2011
- Author(s)
  斉藤康高, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] SiCの構造多形に関する一考察2011
- Author(s)
  伊藤智徳, 秋山亨, 中村浩次
- Organizer
  結晶加工と評価技術第145委員会第126回研究会
- Place of Presentation
  東京(招待講演)
- Year and Date
  2011-06-16
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 半極性GaN(1-101)表面での炭素取り込みに関する理論的検討2011
- Author(s)
  秋山亨, 山下智樹, 中村浩次, 伊藤智徳
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Theoretical investigation for nitrogenincorporatedα-Al_2O_3 surfaces2011
- Author(s)
  Y. Saito, T. Akiyama, K. Nakamura, T. Ito
- Organizer
  6th International Symposium on Surface Science
- Place of Presentation
  東京
- Year and Date
  2011-12-13
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] GaAsナノワイヤ成長条件下におけるGaAs(111)B表面再構成の理論的検討2011
- Author(s)
  村瀬功, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] InPナノワイヤにおけるIn原子の表面拡散に関する理論的研究2011
- Author(s)
  山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] SiCの構造多形に関する簡単な理解2011
- Author(s)
  伊藤智徳, 秋山亨, 中村浩次
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木
- Year and Date
  2011-03-24
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Theoretical approach to band alignment of twin-plane superlattice in semiconductor nanowires2010
- Author(s)
  Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
- Organizer
  2010 MRS Fall Meeting
- Place of Presentation
  Boston
- Year and Date
  2010-12-01
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Surface reconstruction and magnesium incorporation on semipolar GaN(1-101) surfaces2010
- Author(s)
 Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Tomonori Ito
- Organizer
 The 16^<th> International Conference on Crystal Growth
- Place of Presentation
 Beijing
- Year and Date
 2010-08-09
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] SiCの構造多形に関する理論的検討2010
- Author(s)
  伊藤智徳, 近藤智之, 秋山亨, 中村浩次
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-20
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 半導体ナノワイヤにおける双晶面超格子のバンド配列に対する量子論的アプローチ2010
- Author(s)
  秋山亨, 山下智樹, 中村浩次, 伊藤智徳
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to the adsorption behavior for In on InAs wetting layer grown on GaAs(001) substrate2010
- Author(s)
  K. Ogasawara, T. Akiyama, K. Nakamura, T. Ito
- Organizer
  37th International Conference on Compound Semiconductors
- Place of Presentation
  高松
- Year and Date
  2010-05-31
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Theoretical investigation for twinning formation processes at top layer of InP nanowires2010
- Author(s)
 Tomoki Yamashita, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
 The 37^<th> International Conference on Compound Semiconductors
- Place of Presentation
 高松
- Year and Date
 2010-05-31
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] GaAs(001)基板上のInAs表面上のIn吸着原子の振る舞いに対する量子論的アプローチ2010
- Author(s)
  小笠原孝介, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] InPナノワイヤ成長面における双晶形成初期過程に対する理論的研究2010
- Author(s)
  山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to adsorption-desorption behavior on the InAs(111)A surface heteroepitaxially grown on GaAs substrate2010
- Author(s)
 Tomonori Ito, Naoki Ishimure, Toru Akiyama, Kohji Nakamura
- Organizer
 The 16^<th> International Conference on Crystal Growth
- Place of Presentation
 Beijing
- Year and Date
 2010-08-09
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] Stability of hydrogen on nonpolar and semipolar nitride surfaces : Role of surface orientation2010
- Author(s)
 Toru Akiyama, Tomoki Yamashita, Kohji Nakamura, Tomonori Ito
- Organizer
 The 16^<th> International Conference on Crystal Growth
- Place of Presentation
 Beijing
- Year and Date
 2010-08-10
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to adsorption-desorption behavior on the InAs(111) A surface heteroepitaxially grown on GaAs substrate2010
- Author(s)
  T. Ito, N. Ishimure, T. Akiyama, K. Nakamura
- Organizer
  16th International Conference on Crystal Growth
- Place of Presentation
  Beijing
- Year and Date
  2010-08-09
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 半極性GaN表面上のMg吸着に関する理論的研究2010
- Author(s)
  山下智樹, 安味大輔, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  津
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 半導体ナノワイヤでの双晶面超格子におけるバンド配列のナノワイヤ径依存性2010
- Author(s)
  秋山亨, 山下智樹, 中村浩次, 伊藤智徳
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] GaAs基板上のInAs(001)ぬれ層表面構造に対する量子論的アプローチ2010
- Author(s)
  小笠原孝介, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-20
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 無極性および半極性IN_<0.25>Ga_<0.75>N表面構造安定性に対する量子論的アプローチ2010
- Author(s)
 秋山亨, 山下智樹, 中村浩次, 伊藤智徳
- Organizer
 2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
 平塚
- Year and Date
 2010-03-20
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] Theoretical investigations for the polytypism in semiconductors2010
- Author(s)
 Tomonori Ito, Tomoyuki Kondo, Toru Akiyama, Kohji Nakamura
- Organizer
 The 16^<th> International Conference on Crystal Growth
- Place of Presentation
 Beijing
- Year and Date
 2010-08-12
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] 窒化物半導体非極性面の表面構造への量子論的アプローチ2010
- Author(s)
  秋山亨,伊藤智徳,中村浩次
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  津
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Theoretical investigations for the polytypism in silicon carbide : Contribution of the vacancy formation2010
- Author(s)
 Tomonori Ito, Tomoyuki Kondo, Toru Akiyama, Kohji Nakamura
- Organizer
 The 37^<th> International Conference on Compound Semiconductors
- Place of Presentation
 高松
- Year and Date
 2010-06-04
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] InP(111)A面上における双晶形成過程に対する理論的研究2010
- Author(s)
  山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrates2010
- Author(s)
 Tomonori Ito, Haruo Nakano, Toru Akiyama, Kohji Nakamura
- Organizer
 The 3^<rd> International Symposium on Growth of III-Nitrides
- Place of Presentation
 Montpellier
- Year and Date
 2010-07-05
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] 窒化物半導体非極性面の表面構造への量子論的アプローチ2010
- Author(s)
  秋山亨, 中村浩次, 伊藤智徳
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  津(招待講演)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] GaAs(001)基板上InAs(111) A表面に関する理論的検討2010
- Author(s)
  伊藤智徳,伊藤巧,秋山亨,中村浩次
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] GaAs基板上InAs(111)A表面に関する理論的検討2010
- Author(s)
  伊藤智徳, 伊藤巧, 秋山亨, 中村浩次
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrate2010
- Author(s)
  T. Ito, H. Nakano, T. Akiyama, K. Nakamura
- Organizer
  3rd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to the adsorption behavior of In on InAs wetting layer grown on GaAs(001) substrate2010
- Author(s)
 Kosuke Ogasawara, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
 The 37^<th> International Conference on Compound Semiconductors
- Place of Presentation
 高松
- Year and Date
 2010-05-31
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] Theoretical investigation on the structural stability of GaAs nanowires with two different types of facets2009
- Author(s)
 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
 The 14^<th> International Conference on Modulated Semiconductor Structures
- Place of Presentation
 神戸
- Year and Date
 2009-07-20
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] InPナノワイヤにおけるファセット形成過程に関する理論検討2009
- Author(s)
  山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to structural modulation of AlN on 4H-SiC (11-20) during MBE growth2009
- Author(s)
 伊藤智徳, 伊藤巧, 秋山亨, 中村浩次
- Organizer
 The 14^<th> International Conference on Modulated Semiconductor Structures
- Place of Presentation
 神戸
- Year and Date
 2009-07-20
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] GaAs基板上のInAs(111)Aぬれ層表面における表面再構成に対する量子論的アプローチ2009
- Author(s)
  石牟禮直生, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Surface reconstructions and magnesium ioncorporation on semipolar GaN(10-1-1) surfaces2009
- Author(s)
  秋山亨, 安味大輔, 山下智樹, 中村浩次, 伊藤智徳
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  Boston
- Year and Date
  2009-11-30
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 半極性GaN(10-1-1)表面におけるMg原子の吸着に関する理論的検討2009
- Author(s)
  安味大輔, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] 4H-SiC (11-20) 上AlN薄膜の構造多形に対する量子論的アプローチ2009
- Author(s)
  伊藤智徳, 伊藤巧, 秋山亨, 中村浩次
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] SiO_2中のH_2O分子の構造および拡散機構に関する理論検討2009
- Author(s)
  秋山亨
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Ab initio-based approach to surface phase diagram calculation for compound semiconductors and its application to epitaxial growth2009
- Author(s)
  T. Ito, T. Akiyama, K. Nakamura
- Organizer
  2nd International Workshop on Epitaxial Growth and Fundamental Properties of Smiconductor nanostructures
- Place of Presentation
  阿南
- Year and Date
  2009-08-12
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] An ab initio study for electronic states induced by In adatom on InAs (111) A surface2009
- Author(s)
 Toru Akiyama, Kohji Nakamura, Tomonori Ito, Kiyoshi Kanisawa
- Organizer
 26^<th> European Conference on Surface Science
- Place of Presentation
 Palma
- Year and Date
 2009-08-31
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] Theoretical investigation on the facet formation processes in InP nanowires2009
- Author(s)
  山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  Boston
- Year and Date
  2009-12-02
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Stability of Mg-incorporated InN surfaces : first-principles study2009
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito, J. H. Song, A. J. Freeman
- Organizer
  American Physical Society March Meeting
- Place of Presentation
  Pittsburgh
- Year and Date
  2009-03-18
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] 第一原理計算によるSi酸化の界面反応2009
- Author(s)
  秋山亨, 影島博之, 植松真司, 伊藤智徳
- Organizer
  応用物理学会シリコンテクノロジー分科会研究会
- Place of Presentation
  東京
- Year and Date
  2009-06-19
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] InAs(111)A表面上のIn吸着原子に起因する電子状態の理論検討2009
- Author(s)
  秋山亨, 中村浩次, 伊藤智徳, 蟹澤聖
- Organizer
  日本物理学会第63回年次大会
- Place of Presentation
  東京
- Year and Date
  2009-03-28
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Theoretical investigation for the strain effect on surface structure of InAs(111)A2009
- Author(s)
 石牟禮直生, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
 The 14^<th> International Conference on Modulated Semiconductor Structures
- Place of Presentation
 神戸
- Year and Date
 2009-07-23
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] GaN表面におけるMg原子吸着に関する理論的検討2009
- Author(s)
  伊藤智徳, 安味大輔, 秋山亨, 中村浩次
- Organizer
  第39回結晶成長国内会議
- Place of Presentation
  名古屋
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] Ab initio-based approach to surface phase diagram calculation for compound semiconductors and its application to epitaxial growth2009
- Author(s)
 伊藤智徳, 秋山亨, 中村浩次
- Organizer
 2^<nd> International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
 阿南
- Year and Date
 2009-08-12
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] 無極性および半極性InNにおける表面再構成の理論検討2009
- Author(s)
  秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21560032
[Presentation] SiO_2中のH_2O分子の構造および拡散機構に関する理論検討2009
- Author(s)
  秋山亨
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Theoretical investigations for polytypism in AlN thin films2009
- Author(s)
 伊藤智徳, 伊藤巧, 安味大輔, 秋山亨, 中村浩次
- Organizer
 8^<th> International Conference on Nitride Semiconductors
- Place of Presentation
 Jeju
- Year and Date
 2009-10-20
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] Theoretical investigation on the structural stability of III-V nanowires with two different types of facets2009
- Author(s)
 山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
 2^<nd> International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
 阿南
- Year and Date
 2009-08-11
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] SiO_2中の窒素と窒素酸化物分子の理論検討2009
- Author(s)
  影島博之, 秋山亨, 植松真司, 伊藤智徳
- Organizer
  第14回ゲートスタツク研究会「材料・プロセス・評価の物理」
- Place of Presentation
  三島
- Year and Date
  2009-01-24
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Ab initio-based Monte Carlo simulation study for the structural stability of AIN grown on 4H-SiC(11-20)2009
- Author(s)
 伊藤智徳, 伊藤巧, 秋山亨, 中村浩次
- Organizer
 10^<th> International Conference on Atomically Controlled Surface, Interfaces and Nanostructures
- Place of Presentation
 Granada
- Year and Date
 2009-09-25
- Data Source
 KAKENHI-PROJECT-21560032
[Presentation] Reaction Mechanisms of H_2O Molecules at SiO_2/Si Interfaces during Silicon Thermal Oxidation2008
- Author(s)
  T. Akiyama
- Organizer
  2008 International Workshop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  東京工業大学
- Year and Date
  2008-11-07
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Systematic theoretical investigations for contribution of lattice constraint to novel atomic arrangements in alloy semiconductor thin films2008
- Author(s)
 Tomonori Ito, Naoki Takasu, Toru Akiyama, Kohji Nakamura
- Organizer
 The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
- Place of Presentation
 松江
- Year and Date
 2008-10-29
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] Systematic theoretical investigation for adsorption behavior of Al and Natoms on 4H-SiC(11-20)surfaces2008
- Author(s)
 Takumi Ito, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
 The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
- Place of Presentation
 松江
- Year and Date
 2008-10-28
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] Theoretical study of growth condition of cubic GaN2008
- Author(s)
  Yoshihiro Kangawa, Toru Akiyama, Tomonori Ito, Kenji Shiraishi, Koichi Kakimoto
- Organizer
  第27回電子材料シンポジウム
- Place of Presentation
  修善寺
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] SiO_2/Si界面におけるH_2O分子の界面反応機構2008
- Author(s)
  秋山亨
- Organizer
  2008年秋季第69回応用物理学学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Ab initio-based apProach to structural change of compound semiconductor surfaces during MBE growth2008
- Author(s)
 T.Ito, T.Akiyama, and K.Nakamura
- Organizer
 The 4^<th> Asian Confbrence on Crystal Growth and Crystal Technology
- Place of Presentation
 仙台
- Year and Date
 2008-05-23
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] V溝基板上GaN_xAs_<1x>における原子配列の成因に関する検討2008
- Author(s)
 伊藤智徳, 高須直紀, 秋山亨, 中村浩次
- Organizer
 2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
 春日井
- Year and Date
 2008-09-04
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] An ab initio-based approach to reconstructions of the InP(111)A surfaces2008
- Author(s)
 Toru Akiyama, Tomoyuki Kondo, Kohji Nakamura, Tomonori Ito
- Organizer
 The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
- Place of Presentation
 松江
- Year and Date
 2008-10-29
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] Theoretical investigation on the structural stability of GaP nanowires with {111} facets2008
- Author(s)
 Tomoki Yamashita, Toru Akiyama, Kohji Nakamur, Tomonori Ito
- Organizer
 The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
- Place of Presentation
 松江
- Year and Date
 2008-10-29
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] 混晶半導体薄膜の原子配列に関する理論検討2008
- Author(s)
  伊藤智徳, 秋山亨, 中村浩次
- Organizer
  東北大学電気通信研究所共同プロジェクト研究会「半導体サイエンスと半導体テクノロジーの融合-技術を先導する半導体サイエンスを目指して-」
- Place of Presentation
  仙台
- Year and Date
  2008-12-05
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Theoretical investigation on structural stability of AIN thin films on Si(001)2008
- Author(s)
 Daisuke Ammi, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
 The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
- Place of Presentation
 松江
- Year and Date
 2008-10-29
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] An empirical potential approach to the formation of InAs stacking-fault tetrahedron in InAs/GaAs (111)2008
- Author(s)
  Tomonori Ito, Toru Akiyama, Kohji Nakamura, Kiyoshi Kanisawa
- Organizer
  International Conference on Electronic Materials 2008
- Place of Presentation
  Sydney
- Year and Date
  2008-07-30
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Si(OO1)基板上AlN薄膜の構造安定性に関する理論検討2008
- Author(s)
  安味大輔, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] [111]方向に成長するGaPナノワイヤの構造安定性に関する理論検討2008
- Author(s)
  山下智樹, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] 4H-SiC(11-20)基板表面におけるAlおよびN吸着原子の挙動に関する理論検討2008
- Author(s)
  伊藤巧, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] An ab initio-based approach to adsorption-desorption behavior of Si atoms on GaAs(111)A-(2×2)surfaces2008
- Author(s)
 Hiroaki Tatematsu, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
 The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
- Place of Presentation
 松江
- Year and Date
 2008-10-28
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] Theoretical study on nitrogen and nitrogen oxide molecules in silicon oxide2008
- Author(s)
  Hiroyuki Kageshima, Toru Akiyama, Masashi Uematsu, Tomonori Ito
- Organizer
  2008 International Workshop on "Dielectric Thin Films for Future ULSI Devices : Science and Technology"
- Place of Presentation
  東京
- Year and Date
  2008-11-06
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] 積層欠陥四面体と貫通転位の構造安定惟に関する理論検討2008
- Author(s)
  伊藤智徳, 城秀典, 秋山亨, 中村浩次, 蟹澤聖
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] An ab initio-based approach to the stability of GaN(0001)surfaces under Ga-rich conditions2008
- Author(s)
 Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
 The 2^<th> International Symposium on Growth of III-Nitrides
- Place of Presentation
 修善寺
- Year and Date
 2008-07-07
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] 立方晶GaNエピ成長における成長形の制御2008
- Author(s)
  寒川義裕, 秋山亨, 伊藤智徳, ^*白石賢二, ^*柿本浩一
- Organizer
  第38回結晶成長国内会議
- Place of Presentation
  仙台
- Year and Date
  2008-11-04
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Au/GaAs(111)界面におけるウルツ鉱構造GaAs層の形成に関する理論検討2008
- Author(s)
  秋山亨, 羽田優也, 中村浩次, 伊藤智徳
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  船橋
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] [110]方向に成長するシリコンナノワイヤの構造と電子状態2008
- Author(s)
  秋山亨, 中村浩次, 伊藤智徳
- Organizer
  日本物理学会第63回年次大会
- Place of Presentation
  東大阪
- Year and Date
  2008-03-24
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Reaction mechanisms of H_20 molecules at SiO_2/Si interface during silicon thermal oxidation2008
- Author(s)
  Toru Akiyama, Hiroyuki Kageshima, Masashi Uematsu, Tomonori Ito
- Organizer
  2008 International Workshop on "Dielectric Thin Films for Future ULSI Devices : Science and Technology"
- Place of Presentation
  東京
- Year and Date
  2008-11-06
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Empirical potential approach to the formation of 3C-SiC(111)/Si(110)2008
- Author(s)
 Tomonori Ito, Toru Kanno, Toru Akiyama, Kohji Nakamura, Atsushi Konno, Maki Suemitsu
- Organizer
 The 4^<th> Vacuum and Surface Science Conference of Asia and Australia
- Place of Presentation
 松江
- Year and Date
 2008-10-29
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] SiO_2/Si界面におけるH_2O分子の界面反応機構2008
- Author(s)
  秋山亨
- Organizer
  第69回応用物理学学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Stucture and electronic properties of silicon nanowires grown along the [110]direction:role of surface reconstructions2008
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  American Physical Society March Meeting
- Place of Presentation
  New Orleans
- Year and Date
  2008-03-10
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth2008
- Author(s)
 Tomonori Ito, Toru Akiyama, Kohji Nakamura
- Organizer
 The 4^<th> Asian Conference on Crystal Growth, Crystal Technology
- Place of Presentation
 仙台
- Year and Date
 2008-05-23
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] Theoretical approach to structural stability of GaN : how to grow cubic GaN2008
- Author(s)
 Yoshihiro Kangawa, Toru Akiyama, Tomonori Ito, KenjiShiraishi, Koichi Nakimoto
- Organizer
 The 2^<nd> International Symposium on Growth of III-Nitrides
- Place of Presentation
 修善寺
- Year and Date
 2008-07-07
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] Au/GaAs(111)界面におけるGaAs層の構造安定性に関する理論検討2008
- Author(s)
  秋山亨, 羽田優也, 中村浩次, 伊藤智徳
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] SiO_2/Si界面におけるH_2分子の界面反応機構2008
- Author(s)
  秋山亨, 影島博之, 植松真司, 伊藤智徳
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] GaAs(111)A-(2×2)表面上のSi原子の吸着・脱離に関する第一原理からの検討2008
- Author(s)
  立松洋明, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] InP(111)A表面における表面再構成に関する理論的検討2008
- Author(s)
  近藤智之, 立松洋明, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] An ab initio-based approach to phase diagram calculations fbr GaAs(001)-(2x4)Y surfaces2007
- Author(s)
 T.Ito, T.Akiyama, and K.Nakamura
- Organizer
 9^<th> International Confbrence on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
 東京
- Year and Date
 2007-11-13
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] First-principles study of electronic structures and optical properties of GaN and ZnO nanowires2007
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito and A. J. Freeman
- Organizer
  13th International Conference on Surface Science
- Place of Presentation
  Stockholm
- Year and Date
  2007-07-04
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] GaAs(001)-(2×4)Y表面構造安定性に関する基本検討2007
- Author(s)
  伊藤智徳, 秋山亨, 佐野孝典, 中村浩次
- Organizer
  2007年春季第54回応用物理学関係連合講演会
- Place of Presentation
  相模原
- Year and Date
  2007-03-28
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Theoretical investigations for zinc blende-wurtzite polytypism in GaAs layers at Au/GaAs(111)interfaces2007
- Author(s)
  Yuya Haneda, Kosuke Sano, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  9th International Conference on Atomially Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  東京
- Year and Date
  2007-11-13
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] InPナノワイヤにおける回転双晶形成に関する理論検討2007
- Author(s)
  秋山亨, 佐野孝典, 中村浩次, 伊藤智徳
- Organizer
  2007年春季第54回応用物理学関係連合講演会
- Place of Presentation
  相模原
- Year and Date
  2007-03-28
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Si熱酸化における界面反応過程のSiO_2/Si界面応力による影響2007
- Author(s)
  秋山亨
- Organizer
  2007年秋季第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] シリコンナノワイヤの構造と電子状態2007
- Author(s)
  秋山亨, 中村浩次, 伊藤智徳
- Organizer
  東北大学電気通信研究所共同プロジェクト研究会
- Place of Presentation
  仙台
- Year and Date
  2007-10-26
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Si熱酸化における界面反応過程のSiO_2/Si界面応力による影響2007
- Author(s)
  秋山亨
- Organizer
  第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Microscopic proces of oxidation reaction at SiO_2/Si(100)interfaces with oxidation-induced strain2007
- Author(s)
  Toru Akiyama
- Organizer
  17th International Vacuum Congress
- Place of Presentation
  ストックホルム(スウェーデン)
- Year and Date
  2007-07-03
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] GaAs(001)<2x4)Y表面構造状態図作成への量子論的アプローチ2007
- Author(s)
 伊藤智徳, 秋山亨, 中村浩次
- Organizer
 2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
 札幌
- Year and Date
 2007-09-06
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] Theoretical investigations on the formation of wurtzite segments in group III-V semiconductor nanowires2007
- Author(s)
  Tomoki Yamashita, Kosuke Sano, Toru Akiyama, Kohji Nakamura, Tomonori Ito
- Organizer
  9th Intemational Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  東京
- Year and Date
  2007-11-13
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] Microscopic processes of oxidation reaction at SiO_2/Si(100) interfaces with oxidation-induced strain2007
- Author(s)
  T. Akiyama
- Organizer
  17th Inter-national Vacuum Congress
- Place of Presentation
  ストックホルム(スウェーデン)
- Year and Date
  2007-07-03
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Au/GaAs(111)界面におけるGaAs層のウルツ鉱-閃亜鉛鉱構造多形に関する理論検討2007
- Author(s)
  羽田優也, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] An ab initio-based approach to phase diagram calculations for GaN(0001) surfaces2007
- Author(s)
  Tomonori Ito, Tomoyuki Nakamura, Toru Akiyama, Kohji Nakamura
- Organizer
  9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
- Place of Presentation
  東京
- Year and Date
  2007-11-15
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] III-V族化合物半導体ナノワイヤにおける回転双晶形成の理論検討2007
- Author(s)
  山下智樹, 佐野孝典, 秋山亨, 中村浩次, 伊藤智徳
- Organizer
  2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18560020
[Presentation] 酸化誘起歪を伴った極薄SiO_2/Si界面における酸化反応の検討2007
- Author(s)
  秋山亨
- Organizer
  第12回ゲートスタック研究会
- Place of Presentation
  三島
- Year and Date
  2007-02-02
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)2006
- Author(s)
 H.Joe, T.Akiyama, K.Nakamura, and T.Ito
- Organizer
 14^<th> International Conference on Molecular Beam Epitaxy
- Place of Presentation
 東京
- Year and Date
 2006-09-05
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] Suppression of Oxidation Reaction by Oxidation-Induced Strain at Ultrathin Si-Oxide/Si Interface2006
- Author(s)
  T. Akiyama
- Organizer
  2006 Inter-national Workshop on Dielectric Thin Films for Future ULSI Devices
- Place of Presentation
  川崎
- Year and Date
  2006-11-10
- Data Source
  KAKENHI-PROJECT-18360027
[Presentation] Structures and energetics of ZnO, ZnS and ZnSe nanowires : An empirical interatomic potential apProach2006
- Author(s)
 T.Akiyama, K.Nakamura, and T.Ito
- Organizer
 26^<th> International Confbrence on the Physics of Semiconductors
- Place of Presentation
 Vienna
- Year and Date
 2006-07-26
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] イオン性を用いたA^<8-N>B^N化合物の安定構造状態図作成への簡単なアプローチ2006
- Author(s)
 伊藤智徳, 秋山亨, 中村浩次
- Organizer
 2006年秋季第67回応用物理学会学術講演会
- Place of Presentation
 相模原
- Year and Date
 2006-08-29
- Data Source
 KAKENHI-PROJECT-18560020
[Presentation] An empirical potential approach to structural stability for hexagonal boron nitride
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Organizer
  56th Electronic Materials Conference
- Place of Presentation
  USA (Santa Barbara)
- Year and Date
  2014-06-25 – 2014-06-27
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Ab initio-based approach to novel behavior of hetero-epitaxially grown semiconductor surfaces
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Organizer
  SemiconNano 2015
- Place of Presentation
  Taiwan (Hsinchu)
- Year and Date
  2015-09-06 – 2015-09-11
- Invited
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] AlN半極性表面における表面再構成およびAl原子の吸着脱離に関する理論的検討
- Author(s)
  竹本圭孝，秋山亨，中村浩次，伊藤智徳
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学（札幌）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] 化合物半導体エピタキシーにおける量子計算科学の展開
- Author(s)
  寒川義裕，秋山亨，伊藤智徳，白石賢二，中山隆史
- Organizer
  第44回結晶成長国内会議
- Place of Presentation
  学習院大学（東京）
- Year and Date
  2014-11-06 – 2014-11-08
- Invited
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Theoretical investigations for initial oxidation processes on SiC surfaces
- Author(s)
  Ayako Ito, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 7h International Symposium on Surface Science
- Place of Presentation
  くにびきメッセ（松江）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] InAs(0001)-(2×3)ぬれ層表面に対する量子論的アプローチ
- Author(s)
  伊藤智徳，秋山亨，中村浩次
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学（札幌）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] InAsナノワイヤの電子構造および電気伝導率に関する理論的検討
- Author(s)
  秋山亨，中村浩次，伊藤智徳
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学（札幌）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Systematic theoretical investigations on surface reconstructions and adatom kinetics on AlN semipolar surfaces
- Author(s)
  Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 7h International Symposium on Surface Science
- Place of Presentation
  くにびきメッセ（松江）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Effects of Zn doping on the surface structure and initial growth processes of InP thin film layers on InP(111)B substrate
- Author(s)
  Masataka Kato, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 7h International Symposium on Surface Science
- Place of Presentation
  くにびきメッセ（松江）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Molecular dynamics study of thermal conductivity in semiconductor nanowires: Effect of rotation twins
- Author(s)
  Toru Akiyama, Takato Komoda, Kohji Nakamura, and Tomonori Ito
- Organizer
  The 7h International Symposium on Surface Science
- Place of Presentation
  くにびきメッセ（松江）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] An empirical potential approach to the stability of graphitic structure in ANB8-N compounds
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺（修善寺）
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Ab-initio based approach to surface reconstruction and adsorption-desorption behavior of Al on AlN semipolar surfaces
- Author(s)
  Yoshitaka Takemoto, Toru Akiyama, Kohji Nakamura, and Tomonori Ito
- Organizer
  56th Electronic Materials Conference
- Place of Presentation
  USA (Santa Barbara)
- Year and Date
  2014-06-25 – 2014-06-27
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] InP(111)B表面における表面再構成および成長初期過程のZnドーピング効果に関する理論的検討
- Author(s)
  加藤真崇，秋山亨，中村浩次，伊藤智徳
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学（札幌）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Ab initio-based approach to structural change in InAs(001)-(2×3) wetting layer surfaces during MBE growth
- Author(s)
  Tomonori Ito, Toru Akiyama, and Kohji Nakamura
- Organizer
  The 7h International Symposium on Surface Science
- Place of Presentation
  くにびきメッセ（松江）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Electronic bands of III-V semiconductor polytypes with screened-exchange density functional calculations
- Author(s)
  Toru Akiyama, Kohji Nakamura, Tomonori Ito, and A. J. Freeman
- Organizer
  56th Electronic Materials Conference
- Place of Presentation
  USA (Santa Barbara)
- Year and Date
  2014-06-25 – 2014-06-27
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] Initial reaction processes on SiC surfaces during thermal oxidation: A first-principles study
- Author(s)
  Ayako Ito, Toru Akiyama, Kohji Nakamura, Tomonori Ito, Kenji Shiraishi, and Hiroyuki Kageshima
- Organizer
  56th Electronic Materials Conference
- Place of Presentation
  USA (Santa Barbara)
- Year and Date
  2014-06-25 – 2014-06-27
- Data Source
  KAKENHI-PROJECT-24560025
[Presentation] SiC表面における酸化初期過程に関する理論的研究
- Author(s)
  伊藤綾子，秋山亨，中村浩次，伊藤智徳，白石賢二，影島博之，植松真司
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学（札幌）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560025

1. ITO Tomonori (80314136)

# of Collaborated Projects: 6 results

# of Collaborated Products: 452 results
2. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
3. UEMATSU Masashi (60393758)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
4. KAGESHIMA Hiroyuki (70374072)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
5. WATANABE Takanobu (00367153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. ITO Kohei (30276414)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
7. 正直花奈子 (60779734)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 河村貴宏 (80581511)

# of Collaborated Projects: 1 results

# of Collaborated Products: 15 results
9. 寒川義裕 (90327320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
10. 平松和政 (50165205)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
11. 石谷善博 (60291481)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 渡邉聡 (00292772)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 岩谷素顕 (40367735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 三宅秀人 (70209881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. MA BEI (90718420)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 中山隆史

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
17. 山下智樹

# of Collaborated Projects: 0 results

# of Collaborated Products: 6 results
18. 小林篤

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Akiyama Toru 秋山 亨

AKIYAMA Toru 秋山 亨

Research Projects

Research Products

Co-Researchers

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of bond engineering descriptors and its application to widegap semiconductor crystal growthPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Materials design of two-dimensional octet AB compounds by bond engineeringPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Material design of group-IV alloy monolayers using bond engineering conceptPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] Advances in Computer Simulation Studies and Crystal Growth2019

Author(s)

Total Pages

Publisher

ISBN

Data Source

[Book] Epitaxial Growth of III-Nitride Compounds Computational Approach2018

Author(s)

Total Pages

Publisher

ISBN

Data Source

Akiyama Toru 秋山亨

AKIYAMA Toru 秋山亨

[Book] ナノワイヤ最新技術の基礎と応用展開（第2編第6章　形成機構計算）2013