IWAYA MOTOAKI 岩谷素顕

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IWAYA Motoaki 岩谷素顕

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Researcher Number	40367735
Other IDs
Affiliation (Current)	2025: 名城大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help	2020 – 2024: 名城大学, 理工学部, 教授 2010 – 2020: 名城大学, 理工学部, 准教授 2009: Meijo University, 名城大学理工学部, 准教授 2008: 名城大学, 准教授 2007 – 2008: Meijo University, Department of Materials Science and Engineering, Associate Professor 2005 – 2006: 名城大学, 理工学部, 講師
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Medium-sized Section 30:Applied physics and engineering and related fields / Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Broad Section D / Basic Section 30010:Crystal engineering-related / Medium-sized Section 30:Applied physics and engineering and related fields / Optical engineering, Photon science / Crystal engineering / Science and Engineering … More / Electronic materials/Electric materials / Engineering / Science and Engineering / Applied materials science/Crystal engineering / Electron device/Electronic equipment / Science and Engineering / Medical systems Less
Keywords	Principal Investigator AlGaN / GaN / 窒化アルミニウムガリウム / 窒化アルミニウム / 電子線励起 / レーザ / 基板剥離 / LED / トンネル接合 / GaInN … More / 光励起レーザ / 窒化アルミニウムガリウム混晶 / 高品質結晶 / ミラー / 窒化アルミニウムテンプレート / 光励起 / レーザー / AlN / 紫外レーザ / 紫外線レーザ / キャリア注入 / 紫外 / 高性能レーザー / 半導体物性 / 結晶成長 / 光強度 / 低閾値 / ウェットエッチング / 光共振器 / 窒化ガリウム / 電子線 / 窒化物半導体 / ナノ粒子 / 不純物の添加 / レーザ剥離技術 / アンチモン / ナノ金属 / ブロードスペクトル / 貼り合わせ / Moth-eye構造 / 多層膜反射鏡 / ITO / その場観察 / 貼り合わせ技術 / 緑色LED / 光取り出し効率 / ナノ構造 / プラズモン / 貼りあわせ技術 / 白色LED / 透明導電膜 / 光の3原色 / Pn接合 / III族窒化物半導体 / 緑・赤領域 / タンデム構造 / p型GaInN / 窒化物半導体太陽電池 / 緑・赤色領域 / レーザリフトオフ / 超格子 / 半導体 / Off比 / On / リーク電流 / オン抵抗 / HFET / 耐圧 / 低リーク電流 / p型ゲート / ノーマリオフ型素子 / 電力変換素子 / AIN / AIGaN … More Except Principal Investigator 窒化物半導体 / 分極ドーピング / トンネル接合 / ワイドギャップ半導体 / SiC / GaN / 光デバイス / エピタキシャル / ナノワイヤ / ナノ構造 / 半導体 / LED / AIN / p型 / 発光効率 / AlGaN / AlN / 発光ダイオード / 面発光レーザー / ラマン分光 / 縦光学フォノン制御 / 電子散乱 / フォノン制御 / 光導波路 / 量子計算 / 強誘電体 / 自発パラメトリック下方変換 / 第二高調波発生 / 量子光学 / 非線形光学 / エピタキシャル成長 / 半導体物性 / 誘電体物性 / トンネル現象 / 正孔 / ワイドギャップ / 低温成長 / 分極 / 光物性 / Ｘ線 / 結晶工学 / 半導体レーザ / 量子構造 / 発光素子 / 量子閉じ込め / ナノ材料 / 不純物 / 半導体発光デバイス / 量子効果 / 特異構造 / 超格子 / 半導体発光材料 / 微細構造評価 / 光学特性 / ポーラス結晶 / 結晶成長 / 半導体レーザー / 選択成長 / 量子殻 / Junction hetero FET / High breakdown voltage / High power switching / group III nitride / Normally off FET / p-GaN gate / オフ電流 / オン抵抗 / エンハンスメントモード / FET / 高耐圧 / ハイパワースイッチング素子 / GaN系FET / ノーマリーオフ / JHFET / p-GaNゲート / 電子線励起電流 / 電子線励起深紫外レーザ / ソーラーブラインド紫外線検出器 / バルクAlN / ナノカーボン電極 / 分極半導体 / グラフェン / カーボンナノチューブ / 低加速電圧SEM / 分極電荷エンジニアリング / 電子線ホログラフィ / バルクAlN基板 / 深紫外発光素子 / 深紫外 / 熱処理 / ナノカーボン / 結晶成長その場観察 / 電気・電子材料 / 水素脱離 / メモリー効果 / Mg偏析 / 電流狭窄 / 水素脱理 / 低抵抗化 / エッチング / リソグラフィー / Moth-Eye / moth-eye / 窒化物 / 光制御 / 光取り出し効率 / モスアイ構造 / 電子線露光 / 光取出し効率 / レーザダイオード / シミュレーション / 転位 / 原子ステップ / 横方向成長 / 高温MOVPE / AIN基板 / 昇華法 / 量子効率 / 結晶欠陥 / 窒化アルミニウム / 紫外線レーザ / 低転位化 / デバイスシミュレータ / 紫外発光ダイオード / 紫外半導体レーザ / 低転位 / 内部量子効率 / 紫外LD / 紫外LED / LED・LD / UV・DUV / MOVPE / 紫外線 / 光線治療 Less

Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devices
- Principal Investigator
  
  石谷善博
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Chiba University
ワイドギャップ半導体における不純物ドーピング伝導制御からの脱却
- Principal Investigator
  
  竹内哲也
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Meijo University
Departure from conductivity control with impurity doping in widegap semiconductors
- Principal Investigator
  
  竹内哲也
- Project Period (FY)
  2023 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  Meijo University
Far-UV C AlGaN-based electron beam pumped laserPrincipal Investigator
- Principal Investigator
  
  岩谷素顕
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Meijo University
Development of Quantum Computing System Based on Ferroelectric/Paraelectric Stacked Waveguides
- Principal Investigator
  
  KATAYAMA RYUJI
- Project Period (FY)
  2017 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Optical engineering, Photon science
- Research Institution
  Osaka University
Creation of a multi-dimensional and scale singularity structure in crystals and understanding of its mechanism
- Principal Investigator
  
  Kamiyama Satoshi
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Meijo University
Electron beam excited nitride-based UV laserPrincipal Investigator
- Principal Investigator
  
  Iwaya Motoaki
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Meijo University
Novel approaches for hole injections in widegap semiconductors and their applications to novel light-emitting devices
- Principal Investigator
  
  Takeuchi Tetsuya
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Meijo University
Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Nagoya University
Realization of phosphor free white LED for lightingPrincipal Investigator
- Principal Investigator
  
  IWAYA Motoaki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Meijo University
A novel current injection in wide bandgap semiconductors with tunnel junctions
- Principal Investigator
  
  TAKEUCHI Tetsuya
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Meijo University
Innovative hybrid tandem-type white LEDPrincipal Investigator
- Principal Investigator
  
  IWAYA Motoaki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Meijo University
Watt class high power ultraviolet laser diode
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Meijo University
Study of nanostructure fabrication technology for light-wave control
- Principal Investigator
  
  KAMIYAMA Satoshi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Meijo University
AlN系ナイトライドによる次世代小型・超高出力・高効率パワーデバイスPrincipal Investigator
- Principal Investigator
  
  岩谷素顕
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Meijo University
High-Efficiency Nitride-based Power Devices in the Next Generation
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meijo University
紫外発光ダイオードを用いた皮膚病治療システム
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Medical systems
- Research Institution
  Meijo University

[Book] 第3章第1節"MOVPE-サファイア基板上へのc面GaNの成長メカニズム"2012
- Author(s)
  岩谷素顕
- Total Pages
  8
- Publisher
  サイエンスアンドテクノロジー
- Data Source
  KAKENHI-PROJECT-24686003
[Book] 第3章第1節"MOVPE-サファイア基板上へのc面GaNの成長メカニズム"2012
- Author(s)
  岩谷素顕
- Publisher
  サイエンスアンドテクノロジー
- Data Source
  KAKENHI-PROJECT-21686034
[Book] 月刊ディスプレイ2月号「超高輝度GaN系LEDの開発動向」2010
- Author(s)
  岩谷素顕
- Total Pages
  6
- Publisher
  テクノタイムズ社
- Data Source
  KAKENHI-PROJECT-21686034
[Book] 窒化物基板および格子整合基板の成長とデバイス特性2009
- Author(s)
  岩谷素顕、川島毅士、飯田大輔、千田亮太、上山智、天野浩、赤崎勇
- Publisher
  CMC出版
- Data Source
  KAKENHI-PROJECT-21686034
[Book] オプトロニクス9月号「注目の無極性面・半極性面窒化物半導体発光デバイス」2009
- Author(s)
  岩谷素顕
- Total Pages
  6
- Publisher
  テクノタイムズ社
- Data Source
  KAKENHI-PROJECT-21686034
[Book] Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga, In)N films on lattice-mismatched substrates Wiley-VCH Verlag GmbH & Co.KGaA(Editor : T.Paskova)2008
- Author(s)
  H.Amano, T.Kawashima, D.Iida, M.Imura, M.Iwaya, S.Kamiyama, I.Akasaki
- Publisher
  Nitrides with Nonpolar Surfaces
- Data Source
  KAKENHI-PLANNED-18069011
[Book] Nitrides with Nonpolar Surfaces, Metalorganic vapor phase epitaxial growth of nonpolar A1(Ga, In)N films on lattice-mismatched substrates Editor(s) : T. Paskova, 108-1182008
- Author(s)
  H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
- Total Pages
  464
- Publisher
  Wiley-VCH Verlag GmbH & Co. KGaA
- Data Source
  KAKENHI-PLANNED-18069011
[Book] Nitrides with Nonpolar Surfaces, "Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga,In)N films on lattice-mismatched substrates"2008
- Author(s)
  H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
- Total Pages
  464
- Publisher
  Wiley-VCH Verlag GmbH & Co. KGaA (Editor(s): T.Paskova)
- Data Source
  KAKENHI-PLANNED-18069011
[Book] Advances in Light Emitting Materials, Edited by Bo Monemar, Martin Kittler and Hermann Grimmeisss, AlN and AlGaN by MOVPE for UV Light Emitting Devices pp.175-2102008
- Author(s)
  H. Amano, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
- Total Pages
  278
- Publisher
  Trans Technical Publications
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Effect of Polarization‐Charge Modulation on the Carrier‐Injection Efficiency of AlGaN‐Based Ultraviolet‐B Laser Diodes Using Polarization Doping in the p‐Type AlGaN Cladding Layer2024
- Author(s)
  Kondo Ryosuke、Matsubara Eri、Nishibayashi Toma、Yamada Ryoya、Imoto Yoshinori、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Miyake Hideto、Iwaya Motoaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: - Issue: 21 Pages: 2300961-2300961
- DOI
  10.1002/pssa.202300961
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] Effect of Wet Etching on AlGaN‐Based Ultraviolet‐B Laser Diodes Grown on Wet‐Etched Periodic AlN Nanopillars2024
- Author(s)
  Imoto Yoshinori、Hasegawa Ryota、Yabutani Ayumu、Kondo Ryosuke、Nishibayashi Toma、Yamada Ryoya、Matsubara Eri、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Miyake Hideto、Iwaya Motoaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: - Issue: 21 Pages: 2300988-2300988
- DOI
  10.1002/pssa.202300988
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] Homoepitaxial Regrowth of AlGaN on AlGaN Templates Prepared via Chemical Mechanical Polishing and Its Application to UV‐B Laser Diodes2024
- Author(s)
  Yamada Ryoya、Kondo Ryosuke、Miyake Rintaro、Nishibayasi Toma、Matsubara Eri、Imoto Yoshinori、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Miyake Hideto、Iwaya Motoaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: - Issue: 21 Pages: 2400113-2400113
- DOI
  10.1002/pssa.202400113
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser2024
- Author(s)
  Watanabe Ruka、Kobayashi Kenta、Yanagawa Mitsuki、Takeuchi Tetsuya、Kamiyama Satoshi、Iwaya Motoaki、Kamei Toshihiro
- Journal Title
  
  Applied Physics Letters
  
  Volume: 124 Issue: 13 Pages: 131107-131107
- DOI
  10.1063/5.0200294
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23H05460, KAKENHI-PROJECT-22H00304
[Journal Article] Novel UV-B Phototherapy With a Light-Emitting Diode Device Prevents Atherosclerosis by Augmenting Regulatory T-Cell Responses in Mice.2024
- Author(s)
  Tanaka T, Sasaki N, Krisnanda A, Shinohara M, Amin HZ, Horibe S, Ito K, Iwaya M, Fukunaga A, Hirata KI, Rikitake Y.
- Journal Title
  
  J Am Heart Assoc
  
  Volume: 13(2) Issue: 2
- DOI
  10.1161/jaha.123.031639
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K08042, KAKENHI-PROJECT-22H00304
[Journal Article] In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements2024
- Author(s)
  Kobayashi Kenta、Nishikawa Taichi、Watanabe Ruka、Takeuchi Tetsuya、Kamiyama Satoshi、Iwaya Motoaki、Kamei Toshihiro
- Journal Title
  
  physica status solidi (b)
  
  Volume: online Issue: 11 Pages: 2400010-2400010
- DOI
  10.1002/pssb.202400010
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23H05460, KAKENHI-PROJECT-22H00304
[Journal Article] Exfoliation mechanism of AlGaN-based thin films using heated-pressurized water2023
- Author(s)
  Yamada Ryoya、Matsubara Eri、Kondo Ryosuke、Nishibayashi Toma、Hattori Koki、Imoto Yoshinori、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Maruyama Takahiro、Miyake Hideto、Iwaya Motoaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 10 Pages: 105504-105504
- DOI
  10.35848/1882-0786/acfec9
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] Development of High-Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN-Based Ultraviolet-B Laser Diodes and their Device Applications2023
- Author(s)
  Ayumu Yabutani, Ryota Hasegawa, Ryosuke Kondo, Eri Matsubara, Daichi Imai, Sho Iwayama, Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru, Hironori Torii, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya
- Journal Title
  
  Physica Status Soldi A
  
  Volume: 220 Issue: 16 Pages: 831-837
- DOI
  10.1002/pssa.202200831
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04956, KAKENHI-PROJECT-22H00304
[Journal Article] In situ cavity length control of GaN-based vertical-cavity surface-emitting lasers with in situ reflectivity spectra measurements2023
- Author(s)
  Tsuyoshi Nagasawa, Kenta Kobayashi, Ruka Watanabe, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Toshihiro Kamei
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 6 Pages: 066504-066504
- DOI
  10.35848/1347-4065/acdba9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00353, KAKENHI-PROJECT-22H00304
[Journal Article] Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method2023
- Author(s)
  Nishibayashi Toma、Kondo Ryosuke、Matsubara Eri、Yamada Ryoya、Imoto Yoshinori、Hattori Koki、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Miyake Hideto、Naniwae Koichi、Miyoshi Kohei、Yamaguchi Akihiko、Iwaya Motoaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 10 Pages: 104001-104001
- DOI
  10.35848/1882-0786/ad03ac
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared using Different Fabrication Methods2023
- Author(s)
  Matsubara Eri、Omori Tomoya、Hasegawa Ryota、Yamada Kazuki、Yabutani Ayumu、Kondo Ryosuke、Nishibayashi Toma、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Miyake Hideto、Iwaya Motoaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: - Issue: 16 Pages: 2200836-2200836
- DOI
  10.1002/pssa.202200836
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs2022
- Author(s)
  Katsuro Sae、Lu Weifang、Ito Kazuma、Nakayama Nanami、Yamamura Shiori、Jinno Yukimi、Inaba Soma、Shima Ayaka、Sone Naoki、Han Dong-Pyo、Huang Kai、Iwaya Motoaki、Takeuchi Tetsuya、Kamiyama Satoshi
- Journal Title
  
  Nanophotonics
  
  Volume: 11 Issue: 21 Pages: 4793-4804
- DOI
  10.1515/nanoph-2022-0388
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water2022
- Author(s)
  Matsubara Eri、Hasegawa Ryota、Nishibayashi Toma、Yabutani Ayumu、Yamada Ryoya、Imoto Yoshinori、Kondo Ryosuke、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Shojiki Kanako、Kumagai Shinya、Miyake Hideto、Iwaya Motoaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 11 Pages: 116502-116502
- DOI
  10.35848/1882-0786/ac97dc
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K14612, KAKENHI-PROJECT-22H00304
[Journal Article] High-quality n-type conductive Si-doped AlInN/GaN DBRs with hydrogen cleaning2022
- Author(s)
  Kana Shibata, Tsuyoshi Nagasawa, Kenta Kobayashi, Ruka Watanabe, Takayuki Tanaka, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Toshihiro Kamei
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 11 Pages: 112007-112007
- DOI
  10.35848/1882-0786/ac9bc9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00353, KAKENHI-PROJECT-22H00304
[Journal Article] Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation2022
- Author(s)
  Kondo Ryosuke、Yabutani Ayumu、Omori Tomoya、Yamada Kazuki、Matsubara Eri、Hasegawa Ryota、Nishibayashi Toma、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Miyake Hideto、Iwaya Motoaki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 121 Issue: 25 Pages: 253501-253501
- DOI
  10.1063/5.0135033
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs2022
- Author(s)
  Inaba Soma、Lu Weifang、Ito Kazuma、Katsuro Sae、Nakayama Nanami、Shima Ayaka、Jinno Yukimi、Yamamura Shiori、Sone Naoki、Huang Kai、Iwaya Motoaki、Takeuchi Tetsuya、Kamiyama Satoshi
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 14 Issue: 44 Pages: 50343-50353
- DOI
  10.1021/acsami.2c13648
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22H00304
[Journal Article] n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers2021
- Author(s)
  DP. Han, R. Fujiki, R. Takahashi, Y. Ueshima, S. Ueda, W. Lu, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 2 Pages: 021102-021102
- DOI
  10.1063/5.0035343
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy2020
- Author(s)
  T. Akagi, Y. Kozuka, K. Ikeyama, S. Iwayama, M. Kuramoto, T. Saito, T. Tanaka, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 12 Pages: 125504-125504
- DOI
  10.35848/1882-0786/abc986
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-20H00353
[Journal Article] MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs2020
- Author(s)
  N. Goto, N. Sone, K. Iida, W. Lu, A. Suzuki, H. Murakami, M. Terazawa, M. Ohya, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 539 Pages: 125571-125571
- DOI
  10.1016/j.jcrysgro.2020.125571
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire2020
- Author(s)
  K. Sato, S. Yasue, K. Yamada, S. Tanaka, T. Omori, S. Ishizuka, S. Teramura, Y. Ogino, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 3 Pages: 031004-031004
- DOI
  10.35848/1882-0786/ab7711
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416
[Journal Article] Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation2020
- Author(s)
  K. Yanai, W. Lu, Y. Yamane, DP. Han, H. Ou, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Nanomaterials
  
  Volume: 10 Issue: 10 Pages: 2075-2075
- DOI
  10.3390/nano10102075
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Development of Monolithically Grown Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by MOCVD2020
- Author(s)
  K. Ito, W. Lu, N. Sone, Y. Miyamoto, R. Okuda, M. Iwaya, T. Tekeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Nanomaterials
  
  Volume: 10 Issue: 7 Pages: 1354-1354
- DOI
  10.3390/nano10071354
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Characterizations of GaN nanowires and GaInN/GaN multi-quantum shells grown by MOVPE2020
- Author(s)
  N. Goto, W. Lu, H. Murakami, M. Terazawa, J. Uzuhashi, T. Ohkubo, K. Hono, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGE05-SGGE05
- DOI
  10.35848/1347-4065/ab70aa
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation2020
- Author(s)
  DP. Han, CH. Oh, DS. Shin, JI. Shim, M. Iwaya, T. Takeuchi, . Kamiyama, I. Akasaki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 128 Issue: 12 Pages: 123103-123103
- DOI
  10.1063/5.0008041
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] GaN-based vertical cavity surface emitting lasers with lateral optical confinements and conducting distributed Bragg reflectors2020
- Author(s)
  Iida Ryosuke、Ueshima Yusuke、Muranaga Wataru、Iwayama Sho、Takeuchi Tetsuya、Kamiyama Satoshi、Iwaya Motoaki、Akasaki Isamu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGE08-SGGE08
- DOI
  10.35848/1347-4065/ab6e05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01055, KAKENHI-PLANNED-16H06416
[Journal Article] Correlation between Optical and Structural Characteristics in Coaxial GaInN/GaN Multiple Quantum Shell Nanowires with AlGaN Spacers2020
- Author(s)
  W. Lu, Y. Miyamoto, R. Okuda, K. Ito, N. Sone, M. Iwaya, T. Tekeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  ACS Applied Materials & Interfaces
  
  Volume: 12 Issue: 45 Pages: 51082-51091
- DOI
  10.1021/acsami.0c15366
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Aperture diameter dependences in GaN-based vertical-cavity surface-emitting lasers with nano-height cylindrical waveguide formed by BCl3 dry etching2020
- Author(s)
  R. Iida, Y. Ueshima, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki, M. Kuramoto, T. Kamei
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 1 Pages: 012003-012003
- DOI
  10.35848/1882-0786/abcfd7
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-20H00353
[Journal Article] Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures2020
- Author(s)
  W. Lu, K. Ito, N. Sone, R. Okuda, Y. Miyamoto, M. Iwaya, T. Tekeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Applied Surface Science
  
  Volume: 539 Pages: 148279-148279
- DOI
  10.1016/j.apsusc.2020.148279
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Internal loss of AlGaN-based ultraviolet-B band lasr diodes with p-type AlGaN cladding layer using polarization doping2020
- Author(s)
  T. Omori, S. Ishizuka, S. Tanaka, S. Yasue, K. Sato, Y. Ogino, S. Teramura, K. Yamada, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 7 Pages: 071008-071008
- DOI
  10.35848/1882-0786/ab9e4a
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416
[Journal Article] Identifying the cause of thermal droop in GaInN-based LEDs by carrier-and thermo-dynamics analysis2020
- Author(s)
  DP. Han, GW. Lee, SM., Dong-Soo Shin, Jong-In Shim, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  Scientific Reports
  
  Volume: 10 Issue: 1 Pages: 1-11
- DOI
  10.1038/s41598-020-74585-w
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors2020
- Author(s)
  Kei Hiraiwa, Wataru Muranaga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 5 Pages: 055506-055506
- DOI
  10.35848/1882-0786/ab88c6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01055, KAKENHI-PLANNED-16H06416
[Journal Article] Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition2020
- Author(s)
  W. Lu, N. Goto, H. Murakami, N. Sone, K. Iida, M. Terazawa, D.-P. Han, M. Iwaya, T. Tekeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Applied Surface Science
  
  Volume: None Issue: 8 Pages: 145271-145271
- DOI
  10.1021/nl034422t
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Growth and Characterization of Core-Shell Structures Consisting of GaN Nanowire Core and GaInN/GaN Multi-Quantum Shell2020
- Author(s)
  S Kamiyama, W Lu, T Takeuchi, M Iwaya, I Akasaki
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 9 Issue: 1 Pages: 015007-015007
- DOI
  10.1149/2.0252001jss
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Photoluminescence Characterization of Fluorescent SiC with High Boron and Nitrogen Concentrations2020
- Author(s)
  D. Tanaka, W. Lu, S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki
- Journal Title
  
  Materials Science Forum
  
  Volume: 1004 Pages: 265-271
- DOI
  10.4028/www.scientific.net/msf.1004.265
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light ;Emitting Diodes2020
- Author(s)
  DP. Han, S. Ishimoto, R. Mano, W. Lu, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 217 Issue: 7 Pages: 1900713-1900713
- DOI
  10.1002/pssa.201900713
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctions2020
- Author(s)
  K. Kiyohara, M. Odawara, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki, T. Saito
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 11 Pages: 111003-111003
- DOI
  10.35848/1882-0786/abbe80
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-20H00353
[Journal Article] Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers2020
- Author(s)
  K. Sato, S. Yasue, Y. Ogino, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 217 Issue: 14 Pages: 1900864-1900864
- DOI
  10.1002/pssa.201900864
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors2019
- Author(s)
  Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki
- Journal Title
  
  Reports on Progress in Physics
  
  Volume: 82 Issue: 1 Pages: 012502-012502
- DOI
  10.1088/1361-6633/aad3e9
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-17H01055
[Journal Article] Tuning the Resonant Frequency of a Surface Plasmon by Double-Metallic Ag/Au Nanoparticles for High-Eﬃciency Green Light-Emitting Diodes2019
- Author(s)
  Ryoya Mano, Dong-Pyo Han, Kengo Yamamoto, Seiji Ishimoto, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
- Journal Title
  
  Applied Science
  
  Volume: 9 Issue: 2 Pages: 305-305
- DOI
  10.3390/app9020305
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires2019
- Author(s)
  W. Lu, N. Sone, N. Goto, K. Iida, A. Suzuki, D.-P. Han, M. Iwaya, T. Tekeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Nanoscale
  
  Volume: 11 Issue: 40 Pages: 18746-18757
- DOI
  10.1039/c9nr07271c
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy2019
- Author(s)
  Yasuto Akatsuka, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 2 Pages: 025502-025502
- DOI
  10.7567/1882-0786/aafca8
- NAID
  210000135591
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-17H01055
[Journal Article] Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis2019
- Author(s)
  Dong-Pyo Han, Kengo Yamamoto, Seiji Ishimoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 3 Pages: 032006-032006
- DOI
  10.7567/1882-0786/aafca2
- NAID
  210000135589
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Electrical properties of relaxed p-GaN/p-AlGaN superlattices and their application in ultraviolet-B light-emitting devices2019
- Author(s)
  Kosuke Sato, Shinji Yasue, Yuya Ogino, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Journal Title
  
  Jaoanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1016-SC1016
- DOI
  10.7567/1347-4065/ab07a3
- NAID
  210000155940
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Hybrid simulation of light extraction efficiency in multi-quantum-shell NW LED2019
- Author(s)
  M. Terazawa, M. Ohya, K. Iida, N. Sone, A. Suzuki, K. Nokimura, M. Takebayashi, N. Goto, H. Murakami, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCC17-SCCC17
- DOI
  10.7567/1347-4065/ab06b6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Study on N and B Doping by Closed Sublimation Growth Using Separated Ta Crucible2019
- Author(s)
  D Tanaka, H Kurokawa, S Kamiyama, T Takeuchi, M Iwaya, I Akasaki
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 34-37
- DOI
  10.4028/www.scientific.net/msf.963.34
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces2019
- Author(s)
  Wataru Muranaga, Takanobu Akagi, Ryouta Fuwa, Shotaro Yoshida, Junichiro Ogimoto, Yasuto Akatsuka, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki
- Journal Title
  
  Jaoanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCC01-SCCC01
- DOI
  10.7567/1347-4065/ab1253
- NAID
  210000155770
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-17H01055
[Journal Article] Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire LEDs by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition2019
- Author(s)
  N. Sone, A. Suzuki, H. Murakami, N. Goto, M. Terazawa, W. Lu , D.-P. Han, K. Iida, M. Ohya, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  phys. Stat. sol. (a)
  
  Volume: None Issue: 7 Pages: 1900715-1900715
- DOI
  10.1002/pssa.201900715
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] 窒化物半導体による青色レーザーおよび光電変換素子の現状と展望2018
- Author(s)
  竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
- Journal Title
  
  レーザー研究
  
  Volume: 46 Pages: 711-715
- NAID
  130007957688
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] 高効率 GaN 面発光レーザの現状と展望2018
- Author(s)
  竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
- Journal Title
  
  電子情報通信学会論文誌 C
  
  Volume: 101(8) Pages: 312-318
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing2018
- Author(s)
  Junya Hakamata, Yuta Kawase, Lin Dong, Sho Iwayama, Motoaki Iwaya,
- Journal Title
  
  Phys. Status Solidi B
  
  Volume: 1700506 Issue: 5 Pages: 1700506-1700506
- DOI
  10.1002/pssb.201700506
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H02019, KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416
[Journal Article] A GaN-Based VCSEL with a Convex Structure for Optical Guiding2018
- Author(s)
  Natsumi Hayashi, Junichiro Ogimoto, Kenjo Matsui, Takashi Furuta, Takanobu Akagi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 1700648 Issue: 10 Pages: 1700648-1700648
- DOI
  10.1002/pssa.201700648
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-17H01055, KAKENHI-PLANNED-16H06416
[Journal Article] GaN 系量子殻構造の成長と光学特性評価2018
- Author(s)
  上山智・竹内哲也・岩谷素顕・赤﨑勇
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 45
- NAID
  130006727555
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416
[Journal Article] Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates2018
- Author(s)
  Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 484 Pages: 50-55
- DOI
  10.1016/j.jcrysgro.2017.12.036
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019
[Journal Article] High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy2017
- Author(s)
  Akira Yoshikawa, Takaharu Nagatomi, Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 16 Pages: 162102-162102
- DOI
  10.1063/1.5008258
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019
[Journal Article] High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector2017
- Author(s)
  Akira Yoshikawa, Saki Ushida, Kazuhiro Nagase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 19 Pages: 191103-191103
- DOI
  10.1063/1.5001979
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019
[Journal Article] Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN2017
- Author(s)
  Daiki Jinno, Shunya Otsuki, Shogo Sugimori, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 480 Pages: 90-95
- DOI
  10.1016/j.jcrysgro.2017.10.018
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019
[Journal Article] Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer2017
- Author(s)
  Takafumi Hayashi, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
- Journal Title
  
  Scientific Reports
  
  Volume: 7 Issue: 1 Pages: 2944-2944
- DOI
  10.1038/s41598-017-03151-8
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy2017
- Author(s)
  Shota Katsuno, Toshiki Yasuda, Koudai Hagiwara, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 1 Pages: 015504-015504
- DOI
  10.7567/jjap.56.015504
- NAID
  210000147346
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-26286045, KAKENHI-PLANNED-16H06416
[Journal Article] Relationship between lattice relaxation and electrical properties in polarization doping of graded AlGaN with high AlN mole fraction on AlGaN template2017
- Author(s)
  Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hirsoshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 2 Pages: 025502-025502
- DOI
  10.7567/apex.10.025502
- NAID
  210000135770
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-26286045, KAKENHI-PLANNED-16H06416
[Journal Article] Reduction of contact resistance in V-based electrode for high AlN molar fraction n-type AlGaN by using thin SiNx intermediate layer2017
- Author(s)
  Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  Physica Status Solidi C
  
  Volume: - Issue: 8 Pages: 1600243-1600243
- DOI
  10.1002/pssc.201600243
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019
[Journal Article] Theoretical investigation of nitride nanowire-based quantum-shell lasers2017
- Author(s)
  Yuki Kurisaki, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki
- Journal Title
  
  Physica Status Solidi A
  
  Volume: - Issue: 8 Pages: 1600867-1600867
- DOI
  10.1002/pssa.201600867
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06416, KAKENHI-PROJECT-15H02019
[Journal Article] Low-ohmic-contact-resistance V-based electrode for n-type AlGaN with high AlN molar fraction2016
- Author(s)
  Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FL03-05FL03
- DOI
  10.7567/jjap.55.05fl03
- NAID
  210000146566
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] GaInN-based tunnel junctions with graded layers2016
- Author(s)
  Daiki Takasuga, Yasuto Akatsuka, Masataka Ino, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 8 Pages: 081005-081005
- DOI
  10.7567/apex.9.081005
- NAID
  210000138004
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-26286045, KAKENHI-PROJECT-15K13959
[Journal Article] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors2016
- Author(s)
  Kazuki Ikeyama, Yugo Kozuka, Kenjo Matsui, Shotaro Yoshida, Takanobu Akagi, Yasuto Akatsuka, Norikatsu Koide, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 10 Pages: 102101-102101
- DOI
  10.7567/apex.9.102101
- NAID
  210000138061
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] Electrical properties of n-type AlGaN with high Si concentration2016
- Author(s)
  Kunihiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FE02-05FE02
- DOI
  10.7567/jjap.55.05fe02
- NAID
  210000146516
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-15H02019
[Journal Article] Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals2016
- Author(s)
  Yuma Yamamoto, Akira Yoshikawa, Toshiki Kusafuka, Toshiki Okumura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FJ07-05FJ07
- DOI
  10.7567/jjap.55.05fj07
- NAID
  210000146549
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] High-photosensitivity AlGaN-based UV heterostructure-field-effect-transistor-type photosensors2016
- Author(s)
  Akira Yoshikawa, Yuma Yamamoto, Takuya Murase, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FJ04-05FJ04
- DOI
  10.7567/jjap.55.05fj04
- NAID
  210000146546
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells2016
- Author(s)
  Takashi Furuta, Kenjo Matsui, Kosuke Horikawa, Kazuki Ikeyama, Yugo Kozuka, Shotaro Yoshida, Takanobu Akagi, Tetsuya Takeuchi, Satoshi Kamiyama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FJ11-05FJ11
- DOI
  10.7567/jjap.55.05fj11
- NAID
  210000146553
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] Electron and hole accumulations at GaN/AlInN/GaN interfaces and conductive n-type AlInN/GaN distributed Bragg reflectors2016
- Author(s)
  Shotaro Yoshida, Kazuki Ikeyama, Toshiki Yasuda, Takashi Furuta, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FD10-05FD10
- DOI
  10.7567/jjap.55.05fd10
- NAID
  210000146512
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H02019, KAKENHI-PROJECT-26286045
[Journal Article] GaN barrier layer dependence of critical thickness in GaInN/GaN superlattice on GaN characterized by in situ X-ray diffraction2016
- Author(s)
  Junya Osumi, Koji Ishihara, Taiji Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FD11-05FD11
- DOI
  10.7567/jjap.55.05fd11
- NAID
  210000146513
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] 窒化物半導体面発光レーザーの現状2016
- Author(s)
  竹内哲也、岩谷素顕、上山智、赤﨑勇
- Journal Title
  
  照明学会誌
  
  Volume: 100 Pages: 189-189
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] 窒化物半導体面発光レーザの現状と照明応用に向けた将来展望2016
- Author(s)
  竹内哲也、岩谷素顕、上山　智、赤崎　勇
- Journal Title
  
  J. Illum. Engng. Inst. Jpn.
  
  Volume: 100 Pages: 189-192
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26286045
[Journal Article] GaNSb alloys grown with H2 and N2 carrier gases2016
- Author(s)
  Daisuke Komori, Kaku Takarabe, Tetsuya Takeuchi, Takao Miyajima, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 5S Pages: 05FD01-05FD01
- DOI
  10.7567/jjap.55.05fd01
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13959, KAKENHI-PROJECT-26286045
[Journal Article] Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges2015
- Author(s)
  Toshiki Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, and Hiroshi Amano
- Journal Title
  
  Physica Status Solidi (a)
  
  Volume: 212 Issue: 5 Pages: 920-924
- DOI
  10.1002/pssa.201431730
- Description
  オンラインのみ
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-26286045
[Journal Article] GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE2015
- Author(s)
  Daichi Minamikawa, Masataka Ino, Shunsuke Kawai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 252 Issue: 5 Pages: 1127-1131
- DOI
  10.1002/pssb.201451507
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26286045
[Journal Article] Low Resistive and Low Absorptive Nitride-Based Tunnel Junctions2015
- Author(s)
  Daichi Minamikawa, Daiki Takasuka, Masataka Ino, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Journal Title
  
  2014 MRS Fall Meeting Proceeding
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26286045
[Journal Article] Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles2015
- Author(s)
  Daisuke Iida, Ahmed Fadil, Yuntian Chen, Yiyu Ou, Oleksii Kopylov, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Haiyan Ou
- Journal Title
  
  AIP Publishing
  
  Volume: 5 Issue: 9 Pages: 097169-097169
- DOI
  10.1063/1.4931948
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Journal Article] Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes2014
- Author(s)
  Daisuke Iida, Syunsuke Kawai, Nobuaki Ema, Takayoshi Tsuchiya, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 105 Issue: 7 Pages: 072101-072101
- DOI
  10.1063/1.4893757
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article]2014
- Author(s)
  H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and Amano
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 7 Pages: 341041-341041
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Control of crystallinity of GaN grown on sapphire substrate by metalorganic vapor phase epitaxy using in situ X-ray diffraction monitoring method2014
- Author(s)
  Motoaki Iwaya, Taiji Yamamoto, Daiki Tanaka, Daisuke Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki
- Journal Title
  
  Journal of Crystal Growth 401
  
  Volume: 401 Pages: 367-371
- DOI
  10.1016/j.jcrysgro.2013.11.010
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article] 分極制御AlGaN : 層設計と結晶成長2014
- Author(s)
  竹内哲也、岩谷素顕、上山智、天野浩、赤﨑勇
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 41 Pages: 21-32
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] GaNSbのSb取り込みと表面形態に関する検討2014
- Author(s)
  小森大資, 笹島浩希, 鈴木智行,竹内哲也, 上山智, 岩谷素顕, 赤崎勇
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 114 Pages: 7-10
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26286045
[Journal Article] Homoepitaxial growth of AlN layers on freestanding AlN substrate by metalorganic vapor phase epitaxy2014
- Author(s)
  Tomohiro Morishita, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 390 Pages: 46-50
- DOI
  10.1016/j.jcrysgro.2013.12.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Over 1000 channel nitride-based micro-light-emitting diode arrays with tunnel junctions2014
- Author(s)
  M. Watanabe, K. Nakajima, M. Kaga, Y. Kuwano, D. Minamikawa, T. Suzuki, K. Yamashita, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 5S1 Pages: 05FL06-05FL06
- DOI
  10.7567/jjap.53.05fl06
- NAID
  210000143866
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] 分極制御AlGaN：層設計と結晶成長2014
- Author(s)
  竹内哲也、岩谷素顕、上山　智、天野　浩、赤﨑　勇
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 41 Pages: 21-32
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26286045
[Journal Article] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
- Author(s)
  勝野翔太、林　健人、安田俊輝、岩谷素顕、竹内哲也、上山　智、赤﨑　勇、天野　浩
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 114 Pages: 75-80
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26286045
[Journal Article] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
- Author(s)
  勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 赤﨑勇, 天野浩
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 114 Pages: 75-80
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article]2014
- Author(s)
  M. Watanabe, K. Nakajima, M. Kaga, Y. Kuwano, D. Minamikawa, T. Suzuki, K. Yamashita, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Multijunction GaInN-based solar cells using a tunnel junction2014
- Author(s)
  H. Kurokawa, M. Kaga, T. Goda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 3 Pages: 341041-341044
- DOI
  10.7567/apex.7.034104
- NAID
  210000137029
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures2013
- Author(s)
  T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JJ05-08JJ05
- DOI
  10.7567/jjap.52.08jj05
- NAID
  210000142710
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015, KAKENHI-PROJECT-25000011
[Journal Article] Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures2013
- Author(s)
  Tomoyuki Suzuki, Mitsuru Kaga, Kouichi Naniwae, Tsukasa Kitano, Keisuke Hirano, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 82 Issue: 8S Pages: 08JF02-08JF02
- DOI
  10.7567/jjap.52.08jf02
- NAID
  210000142621
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article] Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities2013
- Author(s)
  Kazuki Aoyama, Atsushi Suzuki, Tsukasa Kitano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 82 Issue: 8S Pages: 08JL16-08JL16
- DOI
  10.7567/jjap.52.08jl16
- NAID
  210000142741
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article]2013
- Author(s)
  Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Nitride-based hetero-field-effect transistor-type photosensors with extremely high photosensitivity2013
- Author(s)
  Mami Ishiguro, Kazuya Ikeda, Masataka Mizuno, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Journal Title
  
  Physica Status Solidi RRL 7
  
  Volume: 7 Issue: 3 Pages: 215-217
- DOI
  10.1002/pssr.201206483
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article]2013
- Author(s)
  T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and Isamu Akasaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth2013
- Author(s)
  D. Iida, Y. Kondo, M. Sowa, T. Sugiyama, M. Iwaya, I. Takeuchi, S. Kamiyama, I. Akasaki
- Journal Title
  
  Physica Status Solidi RRL
  
  Volume: 7 Issue: 3 Pages: 211-214
- DOI
  10.1002/pssr.201307023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article] GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes2013
- Author(s)
  Mitsuru Kaga, Takatoshi Morita, Yuka Kuwano, Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 82 Issue: 8S Pages: 08JH07-08JH07
- DOI
  10.7567/jjap.52.08jh07
- NAID
  210000142699
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article] Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers2013
- Author(s)
  Kenjo Matsui, Koji Yamashita, Mitsuru Kaga, Takatoshi Morita, Tomoyuki Suzuki, Tetsuya Takeuch, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 82 Issue: 8S Pages: 08JG02-08JG02
- DOI
  10.7567/jjap.52.08jg02
- NAID
  210000142677
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article] Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions2013
- Author(s)
  Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JK12-08JK12
- DOI
  10.7567/jjap.52.08jk12
- NAID
  210000142725
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] AlN mole fraction dependence of polarization induced hole concentrations in GaN/AlGaN heterostructures2013
- Author(s)
  T. Yasuda, K. Yagi, Tomoyuki Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 印刷中
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Combination of Indium–Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes2013
- Author(s)
  Tsubasa Nakashima, Kenichiro Takeda, Hiroshi Shinzato, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Isamu Akasaki, and Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 82 Issue: 8S Pages: 08JG07-08JG07
- DOI
  10.7567/jjap.52.08jg07
- NAID
  210000142682
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003, KAKENHI-PROJECT-25000011
[Journal Article]2013
- Author(s)
  M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] GaInN-based tunnel junctions in n-p-n light emitting diodes2013
- Author(s)
  M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 印刷中
- NAID
  210000142699
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Combination of Indium-in Oxide and SiO_2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes2013
- Author(s)
  Yuko Matsubara, Tomoaki Yamada, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Journal Title
  
  physica status solidi C
  
  Volume: 10 Issue: 11 Pages: 1537-1540
- DOI
  10.1002/pssc.201300265
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes2013
- Author(s)
  M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JH06-08JH06
- DOI
  10.7567/jjap.52.08jh06
- NAID
  210000142699
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates2012
- Author(s)
  K.Yagi, M. Kaga, K. Yamashita, K. Takeda, M. Iwaya, T. Takeuchi,S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 5R Pages: 051001-051001
- DOI
  10.1143/jjap.51.051001
- NAID
  210000140586
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Indium-Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emit Diodes2012
- Author(s)
  K. Takehara, K. Takeda, S. Ito, H. Aoshiia. M. Iwaya. T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 4R Pages: 42101-1
- DOI
  10.1143/jjap.51.042101
- NAID
  210000140419
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article] Laser lift-off of AlN/sapphire for UV light-emitting diodes2012
- Author(s)
  H. Aoshima, K. Takeda, K. Takehara, S. Ito, M. Mori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.9 Pages: 753-753
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Growth of GaN and AlGaN on(100)β-Ga2O3 substrates2012
- Author(s)
  S. Ito, K. Takeda, K. Nagata, H. Aoshima, K. Takehara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.9 Pages: 519-519
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Growth and light properties of fluorescent SiC for white LEDs2012
- Author(s)
  M. Syvajarvi, R. Yakimova, M. Iwaya, T. Takeuchi, I. Akasaki, and S Kamiyama
- Journal Title
  
  Materials Science Forum
  
  Volume: Vols. 717-720 Pages: 87-92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Growth of GaN and AlGaN on (100) β-Ga203 substrates2012
- Author(s)
  Shun Ito, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Kosuke Takehara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Journal Title
  
  physica status solidi c
  
  Volume: 9 Issue: 3-4 Pages: 519-522
- DOI
  10.1002/pssc.201100499
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Indium-Tin Oxide/Al Reflective Electrodes for Ultraviolet Light-Emitting Diodes2012
- Author(s)
  K. Takehara, K. Takeda, S. Ito, H. Aoshima, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.51 Pages: 42101-42101
- NAID
  210000140419
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Properties of nitride-based photovoltaic cells under concentrated light illumination2012
- Author(s)
  S. Yamamoto, M. Mori, Y. Kuwahara, T. Fujii, T. Nakao, S. Kondo, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Journal Title
  
  Rapid Research Letters
  
  Volume: Vol.6 Pages: 145-145
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Laser lift-off of AIN/sapphire for UV light-emitting diodes2012
- Author(s)
  H Aoshima, K. Takeda, K. Takehara. S. Ito, M. Mori、M Iwaya, T. Takeuchi. S. Kamiyama, I. Akasaki, R Amano
- Journal Title
  
  physica status solidi C
  
  Volume: 9 Issue: 3-4 Pages: 753-75
- DOI
  10.1002/pssc.201100358
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article] Epitaxial Indium Tin Oxide Film Deposited on Sapphire Substrate by Solid-Source Electron Cyclotron Resonance Plasma2012
- Author(s)
  S. Kaneko, H. Torii, M. Soga, K. Akiyama, M. Iwaya, M. Yoshimoto, and T. Amazawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.51
- NAID
  210000140049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] White light-emitting diode based on fluorescent SiC2012
- Author(s)
  S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, R. Yakimova, M. Syvajarvi
- Journal Title
  
  Thin Solid Films
  
  Volume: 522 Pages: 23-25
- DOI
  10.1016/j.tsf.2012.02.017
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686003
[Journal Article] Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors2012
- Author(s)
  K. Ikeda, Y. Isobe, H. Ikki, T. Sakakibara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki and H. Amano
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.9 Pages: 942-942
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells2011
- Author(s)
  Kazuhio Ban, Jun-ichi Yamamoto, Kenichro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Issue: 5 Pages: 052101-052101
- DOI
  10.1143/apex.4.052101
- NAID
  10028210215
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Fluorescent SiC and its application to white light-emitting diodes2011
- Author(s)
  S.Kamiyama, M.Iwaya, T.Takeuchi, I.Akasaki, M.Syvajarvi, R.Yakimova
- Journal Title
  
  Journal of Semiconductors
  
  Volume: 32 Issue: 1 Pages: 013004-013004
- DOI
  10.1088/1674-4926/32/1/013004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate2011
- Author(s)
  T. Nakao, T. Fujii, T. Sugiyama, S. Yamamoto, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.4 Pages: 101001-101001
- NAID
  10029790429
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method2011
- Author(s)
  Masayasu Yamakawa, Kazuki Murata, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Masanobu Azuma
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- NAID
  10028209940
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] 窒化物半導体トンネル接合の作製2011
- Author(s)
  加賀充、飯田大輔、北野　司、山下浩司、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 111 Pages: 105-110
- NAID
  110008725972
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article]2011
- Author(s)
  山下浩司、加賀充、矢木康太、鈴木敦、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 111 Pages: 99-99
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] GaInN-based solar cells using GaInN/GaInN superlattices2011
- Author(s)
  T. Fujii, Y. Kuwahara, D. Iida, Y. Fujiyama, Y. Morita, T. Sugiyama, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Journal Title
  
  physica status solidi(c)
  
  Volume: Volume 8 Pages: 2463-2465
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] AlNテンプレートを用いた高品質AlN/GaN多層膜反射鏡の作製2011
- Author(s)
  矢木康太、加賀充、山下浩司、竹田健一郎、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 111 Pages: 89-93
- NAID
  110008725969
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Microstructures of GaInN/GaInN Superlattices on GaN Substrates2011
- Author(s)
  T.Sugiyama, Y.Kuwahara, Y.Isobe, T.Fujii, K.Nonaka, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Pages: 15701-15701
- NAID
  10027782720
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article]2011
- Author(s)
  加賀充、飯田大輔、北野司、山下浩司、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 111 Pages: 105-105
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method2011
- Author(s)
  M.Yamakawa, K.Murata, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, M.Azuma
- Journal Title
  
  Applied Physics Express 4
- NAID
  10028209940
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Fluorescent SiC and its application to white light-emitting diodes2011
- Author(s)
  S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki, M. Syvajarvi, and R. Yakimova
- Journal Title
  
  Journal of Semiconductors
  
  Volume: Vol.32 Pages: 13004-13004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] III族窒化物半導体トンネル接合を用いた電流経路の検討2011
- Author(s)
  山下浩司、加賀充、矢木康太、鈴木敦志、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 111 Pages: 99-104
- Data Source
  KAKENHI-PROJECT-23560015
[Journal Article] Microstructures of GaInN/GaInN Superlattices on GaN Substrates2011
- Author(s)
  T. Sugiyama, Y. Kuwahara, Y. Isobe, T. Fujii, K. Nonaka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.4 Pages: 15701-15701
- NAID
  10027782720
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate2011
- Author(s)
  Y. Kuwahara, T. Fujii, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujiyama, Y. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.4 Pages: 21001-21001
- NAID
  10027782804
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate2011
- Author(s)
  T.Nakao, T.Fujii, T.Sugiyama, S.Yamamoto, D.Iida, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 4 Issue: 10 Pages: 101001-101001
- DOI
  10.1143/apex.4.101001
- NAID
  10029790429
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells2011
- Author(s)
  Kazuhito Ban, Jun-ichi Yamamoto, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- NAID
  10028210215
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] GaInN-based solar cells using GaInN/GaInN superlattices2011
- Author(s)
  T.Fujii, Y.Kuwahara, D.Iida, Y.Fujiyama, Y.Morita, T.Sugiyama, Y.Isobe, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
- Journal Title
  
  physica status solidi c
  
  Volume: 8 Issue: 7-8 Pages: 2463-2465
- DOI
  10.1002/pssc.201001152
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] その場観察X線回折測定を用いた窒化物半導体の有機金属化合物気相成長2011
- Author(s)
  飯田大輔、岩谷素顕、竹内哲也、上山智、赤崎勇
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: Vol.38 Pages: 227-227
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer2011
- Author(s)
  K.Takeda, K.Nagata, T.Ichikawa, K.Nonaka, Y.Ogiso, Y.Oshimura, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, H.Yoshida, M.Kuwabara, Y.Yamashita, H.Kan
- Journal Title
  
  physica status solidi (c)
  
  Volume: 8 Pages: 464-466
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Growth and characterization of GaN grown on moth-eye patterned sapphire substrates2010
- Author(s)
  A. Ishihara, R. Kawai, T. Kitano, A. Suzuki, T. Kondo, M. Iwaya, H. Amano, S. Kamiyama, and I. Akasaki
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.7 Pages: 2056-2058
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode2010
- Author(s)
  R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.7 Pages: 2180-2182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy2010
- Author(s)
  D.Iida, K.Tamura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 3131-3135
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy2010
- Author(s)
  D.Iida, K.Tamura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 3131-3135
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] GaInN/GaN p-i-n light-emitting solar cells2010
- Author(s)
  Y.Fujiyama, Y.Kuwahara, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (c)
  
  Volume: 7 Pages: 2382-2385
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Nitride-based light-emitting solar cell2010
- Author(s)
  Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.7 Pages: 1807-1809
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] GaInN/GaN p-i-n light-emitting solar cells2010
- Author(s)
  Y. Fujiyama, Y. Kuwahara, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.7 Pages: 2382-2385
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate2010
- Author(s)
  Y. Kuwahara, T. Fujii, Y. Fujiyama, T. Sugiyama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.3 Pages: 111001-111001
- NAID
  10027441681
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates2010
- Author(s)
  Z.Wu, K.Nonaka, Y.Kawai, T.Asai, F.A.Ponce, C.Chen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027441702
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Misfit strain relaxation in m-plane epitaxy of InGaN on ZnO2010
- Author(s)
  Z.H.Wu, K.W.Sun, Q.Y.Wei, A.M.Fischer, F.A.Ponce, Y.Kawai, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 96 Pages: 71909-71909
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Defects in highly Mg-doped AlN2010
- Author(s)
  K.Nonaka, T.Asai, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 207 Pages: 1299-1301
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient2010
- Author(s)
  K.Nagata, T.Ichikawa, K.Takeda, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 207 Pages: 1393-1396
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Realization of Nitride-Based Solar Cell on Freestanding GaN Substrate2010
- Author(s)
  Y.Kuwahara, T.Fujii, Y.Fujiyama, T.Sugiyama, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 3 Pages: 111001-111001
- NAID
  10027441681
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes2010
- Author(s)
  Cyril Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027014973
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode2010
- Author(s)
  R.Kawai, T.Kondo, A.Suzuki, F.Teramae, T.Kitano, K.Tamura, H.Sakurai, M.Iwaya, H.Amano, S.Kamiyama, I.Akasaki, M.Chen, A.Li, K.Su
- Journal Title
  
  pnysica status solidi (c)
  
  Volume: 7 Pages: 2180-2182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer2010
- Author(s)
  T.Asai, K.Nonaka, K.Ban, K.Nagata, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (c)
  
  Volume: 7 Pages: 2101-2103
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Atomic layer epitaxy of AlGaN2010
- Author(s)
  Kentaro Nagamatsu, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Journal Title
  
  physica status solidi (c)
  
  Volume: 7 Pages: 2368-2370
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers2010
- Author(s)
  K.Takeda, F.Mori, Y.Ogiso, T.Ichikawa, K.Nonaka, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (c)
  
  Volume: 7 Pages: 1916-1918
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Compensation effect of Mg-doped aand c-plane GaN films grown by metalorganic vapor phase epitaxy2010
- Author(s)
  D. Iida, K. Tamura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 3131-3135
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Activation energy of Mg in a-plane Ga_<1-x> In_xN(0<x<0.17)2009
- Author(s)
  D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  physica status solidi(b)
  
  Volume: Vol.246 Pages: 1188-1190
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN2009
- Author(s)
  Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025085540
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Activation energy of Mg in Al_<0.25>Ga_<0.75>N and Al_<0.5>Ga_<0.5>N2009
- Author(s)
  K.Nagamatsu, K.Takeda, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Phys.Status Solidi C 6
  
  Pages: 437-439
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN2009
- Author(s)
  R. Senda, T. Matsubara, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.2 Pages: 61004-61004
- NAID
  10025086396
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] High-performance UV detector based on AlGaN/GaN junction heterostructure field-effect transistor with a p-GaN gate2009
- Author(s)
  M. Iwaya, Shuichi Miura, Takahiro Fujii, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.6
- NAID
  40016818863
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy2009
- Author(s)
  Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Volume 311 Pages: 2929-2932
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN2009
- Author(s)
  A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang, R. Senda, D. Iida, M. Iwaya, H. Amano, and F. A. Ponce
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.2 Pages: 4102-4102
- NAID
  10025085540
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Realization of high crystalline-quality and thick GaInN films2009
- Author(s)
  R. Senda, T. Matsubara, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Optimization of electrode configuration in large GaInN light-emitting diodes2009
- Author(s)
  落合渉、河合良介、鈴木敦志、岩谷素顕、天野浩、上山智、赤崎勇
- Journal Title
  
  Physica Status Solidi (C) Vol.6, Issue 6
  
  Pages: 1416-1419
- Data Source
  KAKENHI-PROJECT-18560353
[Journal Article] Relaxation and recovery processes of Al_xGa_<1-x>N grown on AlN underlying layer2009
- Author(s)
  Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2850-2852
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thick m-Plane GaInN Underlying Layer on Grooved GaN2009
- Author(s)
  Ryota Senda, Tetsuya Matsubara, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 61004-61004
- NAID
  10025086396
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Novel UV devices on high-quality AlGaN using grooved underlying layer2009
- Author(s)
  Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al.
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2860-2863
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Improvement of crystalline quality of InGaN epilayers on various crystal planes of ZnO substrate by metal-organic vapor phase epitaxy2009
- Author(s)
  Y. Kawai, S. Ohsuka, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Activation energy of Mg in a-plane Ga_<1-x>In_xN(0<x<0.17)2009
- Author(s)
  Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Physica Status Solidi B 246
  
  Pages: 1188-1190
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Activation energy of Mg in a -plane Ga_<1-x>In_xN(0<x<0.17)2009
- Author(s)
  Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Journal Title
  
  physica status solidi(b) 246
  
  Pages: 1188-1190
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] High-reflectivity Ag-based ohmic contacts for blue light-emitting diodes2009
- Author(s)
  河合良介、森俊晶、落合渉、鈴木敦志、岩谷素顕、天野浩、上山智、赤崎勇
- Journal Title
  
  Physica Status Solidi (C) Vol.6, Issue S2
- Data Source
  KAKENHI-PROJECT-18560353
[Journal Article] High-reflectivity Ag-based p-type ohmic contacts for blue light-emitting diodes2009
- Author(s)
  R. Kawai, T. Mori, W. Ochiai, A. Suzuki, M. Iwaya, H. Amano, S. Kamiyama, and I. Akasaki
- Journal Title
  
  physica status solidi(c)
  
  Volume: Vol.6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Strong emission from GaInN/GaN multiple quantum wells on high-crys talline-quality thick m-plane GaInN underlying layer on grooved GaN2009
- Author(s)
  Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Applied Physics Express 2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Growth of thick GaInN on grooved(10-1-1) GaN/(10-1-2) 4H-SiC2009
- Author(s)
  T. Matsubara, R. Senda, D. Iida, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Volume 311 Pages: 2926-2928
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686034
[Journal Article] Growth of thick GaInN on grooved(1011)GaN/(1012)4H-SiC2009
- Author(s)
  Matsubara, Tetsuya, Senda, Ryota, Iids, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2926-2928
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy2009
- Author(s)
  Iids, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2887-2890
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices2008
- Author(s)
  H. Amano, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
- Journal Title
  
  Mater. Sci. Forum 590
  
  Pages: 175-210
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy2008
- Author(s)
  N. Kato, S. Sato, H. Sugimura, T. Sumii, N. Okada, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh
- Journal Title
  
  Phys, Stat. Sol. (c) 5
  
  Pages: 1559-1561
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates2008
- Author(s)
  M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 2308-2313
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates2008
- Author(s)
  M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh
- Journal Title
  
  Phys, Stat. Sol. (c) 5
  
  Pages: 1582-1584
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates2008
- Author(s)
  M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh
- Journal Title
  
  J. Crystal Growth 310
  
  Pages: 2308-2313
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices2008
- Author(s)
  H.Amano, M.Imura, M.Iwaya, S.Kamiyama, I.Akasaki
- Journal Title
  
  Mater.Sci.Forum 590
  
  Pages: 175-210
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE2008
- Author(s)
  K. Nagamatsu, N. Okada, N. Kato, T. Sumii, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Journal Title
  
  Phys. Stat. Sol. (c) 5
  
  Pages: 3048-3050
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Control of p-type conduction in a-plane Ga_<1-x>In_xN(0<x<0.10)grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy2008
- Author(s)
  Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4996-4998
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire2008
- Author(s)
  K. Iida, H. Watanabe, K. Takeda, F. Mori, H. Tsuzuki, Y. Yamashita, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh
- Journal Title
  
  Phys, Stat. Sol. (c) 5
  
  Pages: 2142-2144
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of A1N on 6H-SiC substrates2008
- Author(s)
  M.Imura, H.Sugimura, N.Okada, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 2308-2313
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN2008
- Author(s)
  K. Nagamatsu, N. Okada, H. Sugimura, H. Tsuzuki, F. Mori, K. Iida, A. Bando, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Journal Title
  
  J. Crystal Growth 310
  
  Pages: 2326-2329
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Fabrication of enhancement-mode Al_xGa_<1-x>N/GaN junction heterostructure field-effect transistors with p-type GaN gate contact2007
- Author(s)
  T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, and I.Akasaki
- Journal Title
  
  phys.stat.sol. (c)4
  
  Pages: 2708-2711
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE2007
- Author(s)
  N.Okada, N.Kato, S.Sato, T.Sumii, N.Fujimoto, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 141-144
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Annihilation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio2007
- Author(s)
  M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 136-140
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers2007
- Author(s)
  M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, . K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 257-260
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of A1N on trench-patterned AlN layers2007
- Author(s)
  M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada,. K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro T. Takagi, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 257-260
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio2007
- Author(s)
  M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 136-140
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers2007
- Author(s)
  M.Imura, K.Nakano, G.Narita, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 257-260
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy2007
- Author(s)
  M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 1458-1462
- NAID
  10018900504
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Epitaxial lateral overgrowth of AIN on trench-patterned AIN layers2007
- Author(s)
  M.Imura, K.Nakano, G.Narita, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 257-260
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Fabrication of enhancement-mode Al_xGa_<1-x>N/GaN junction heterostructure field-effect transistors with p-type GaN gate contact2007
- Author(s)
  T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  physics status solidi (c) Vol.4
  
  Pages: 2708-2711
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18760259
[Journal Article] Control of threshold voltage of enhancement-mode Al_xGa_<1-x>N/GaN junction heterostructure field-effect transistors using p-GaN gate contact2007
- Author(s)
  T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 115-118
- NAID
  10018704414
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Fabrication of enhancement-mode Al_XGa_(1-X) N/GaN junction heterostructure field-effect transistors with p-type GaN gate contact2007
- Author(s)
  T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  phys. stat. sol. (c)4
  
  Pages: 2708-2711
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate2007
- Author(s)
  K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
- Journal Title
  
  Phys. Stat. Sol. (a) 204
  
  Pages: 1848-1852
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification2007
- Author(s)
  N.Okada, N.Kato, S.Sato, T.Sumii, T.Nagai, N.Fujimoto, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Maruyama, T.Takagi, T.Noro, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 349-353
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE2007
- Author(s)
  K. Balakrishnan, K. Iida, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  physica status solidi(c) 4
  
  Pages: 2272-2276
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Fabrication of enhancement-mode A1_xGa_<1-x>N/GaN junction heterostructure field-effecttransistors with p-type GaN gate contact2007
- Author(s)
  T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  phys. stat. sol. (c)4
  
  Pages: 2708-2711
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy2007
- Author(s)
  N. Okada, M. Imura, T. Nagai, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  physica status solidi(c) 4
  
  Pages: 2528-2531
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE2007
- Author(s)
  N. Okada, N. Kato, S. Sato, T. Sumii, N. Fujimoto, M. Imura, K. Balak rishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Takagi, T. Noro and A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 400
  
  Pages: 141-144
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Epitaxial lateral growth of m-plane GaN and Al_<0.18>Ga_<0.82>N on m-plane 4H-SiC and 6H-SiC substrates2007
- Author(s)
  T.Kawashima, T.Nagai, D.Iida, A.Miura, Y.Okadome, Y.Tsuchiya, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 261-264
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Influence of High Temperature in the Growth of Low Dislocation Content AIN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy2007
- Author(s)
  K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 46
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy2007
- Author(s)
  M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1458-1462
- NAID
  10018900504
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Control of threshold voltage of enhancement-mode Al_XGa_(1-X) N/GaN junction heterostructure field-effect transistors using p-GaN gate contact2007
- Author(s)
  T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 115-118
- NAID
  10018704414
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Control of threshold voltage of enhancement-mode Al_xGa_<1-x>N/GaN junction heterostructure field-effect transistors using p-GaN gate contact2007
- Author(s)
  T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics Vol.46
  
  Pages: 115-118
- NAID
  10018704414
- Data Source
  KAKENHI-PROJECT-18760259
[Journal Article] Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio2007
- Author(s)
  M.Imura, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 136-140
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Control of threshold voltage of enhancement-mode Al_xGa_1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact2007
- Author(s)
  T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 115-118
- NAID
  10018704414
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of Al_xGa_<1-x>N (x>0.2) on sapphire and its application to UV-B-light-emitting devices2007
- Author(s)
  K.Iida, T.Kawashima, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 265-267
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Microstructure in nonpolar m-plane GaN and AlGaN films2007
- Author(s)
  T.Nagai, T.Kawashima, M.Imura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 288-292
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths2007
- Author(s)
  M Esmaeili, M Sabooni, H Haratizadeh, P P Paskov, B Monemar, P O Holz, S Kamiyama and M Iwaya
- Journal Title
  
  J. Phys.: Condens. Matter 19
  
  Pages: 356218-356218
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE2007
- Author(s)
  N.Kato, S.Sato, T.Sumii, N.Fujimoto, N.Okada, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Maruyama, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 215-218
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures : influence of Al composition and Si doping2007
- Author(s)
  M.Esmaeili, H.Haratizadeh, B.Monemar, P.P.Paskov, P.O.Holtz, P.Bergman, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Nanotechnology 18
  
  Pages: 25401-25401
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Mg-doped high-quality Al_xGa_<1-x>N(x=0-1)grown by high-temperature metal-organic vapor phase epitaxy2007
- Author(s)
  M. Imura, N. Kato, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  physica status solidi(c) 4
  
  Pages: 2502-2505
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate2007
- Author(s)
  K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
- Journal Title
  
  physica status solidi(a) 204
  
  Pages: 1848-1852
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Annihiation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio2007
- Author(s)
  M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bando
- Journal Title
  
  Journal of Crystal Growth 400
  
  Pages: 136-140
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Annihilation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio2007
- Author(s)
  M.Imura, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 136-140
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Growth of High-Quality AlN with High Growth Rate by High Temperature MOVPE2006
- Author(s)
  N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solidi (To be published)
- Data Source
  KAKENHI-PROJECT-17650155
[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AIN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
- Author(s)
  M.Imura, K.Nakano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 8639-8643
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates2006
- Author(s)
  K.Nakano, M.Imura, G.Narita, T.Kitano, Y.Hirose, N.Fujimoto, N.Okada, T.Kawashima, K.Iida, K.Balakrishnan, M.Tsuda, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Physica Status Solidi (a) 203
  
  Pages: 1632-1635
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Microstructure of thick AlN grown on sapphire by high-temperature MOVPE2006
- Author(s)
  M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solidi (a) 203
  
  Pages: 1626-1631
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT2006
- Author(s)
  Yoshikazu Hirose, Akira Honshio, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Michinobu Tsuda, Hiroshi Amano, Isamu Akasaki
- Journal Title
  
  IEICE Trans. Electron. E89-C
  
  Pages: 1064-1067
- NAID
  110007538789
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy2006
- Author(s)
  M.Imura, K.Nakano, T.Kitano, N.Fujimoto, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Applied Physics Letters 89
  
  Pages: 21901-21901
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Optical signatures of dopants in GaN2006
- Author(s)
  B.Monemar, P.P.Paskov, J.P.Bergman, A.A.Toropov, T.V.Shubina, S.Figge, T.Paskova, D.Hommel, A.Usui, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Materials Science in Semiconductor Processing 9
  
  Pages: 168-174
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact2006
- Author(s)
  N.Tsuyukuchi, K.Nagamatsu, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018158654
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire2006
- Author(s)
  M.Tsuda, H.Furukawa, A.Honshio, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 2509-2513
- NAID
  40007227459
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
- Author(s)
  M.Imura, K.Nakano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 8639-8643
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate2006
- Author(s)
  M.Imura, A.Honshio, Y.Miyake, K.Nakano, N.Tsuchiya, M.Tsuda, Y.Okadome, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Physica B : Condensed Matter 376-377
  
  Pages: 491-495
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45, No.4a(未定)
- NAID
  40007227457
- Data Source
  KAKENHI-PROJECT-17650155
[Journal Article] Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells2006
- Author(s)
  B.Arnaudov, P.P.Paskov, H.Haratizadeh, P.O.Holtz, B.Monemar, S.Kamiyama, M.Iwaya, H.Amano, I.Akasaki
- Journal Title
  
  Physica Status Solidi (c) 3
  
  Pages: 523-1526
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer2006
- Author(s)
  Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al.
- Journal Title
  
  Physics Status Solidi A 206
  
  Pages: 1199-1204
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT2006
- Author(s)
  Y.Hirose, A.Honshio, T.Kawashima, M.Iwaya, S.Kamiyama, M.Tsuda, H.Amano and I.Akasaki
- Journal Title
  
  IEICE Trans.Electron. E89-C
  
  Pages: 1064-1067
- NAID
  110007538789
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact2006
- Author(s)
  N. Tsuyukuchi, K. Nagamatsu, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018158654
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] High On/Off Ratio in Enhancement-Mode Al_xGa_<1-x>N/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact2006
- Author(s)
  T.Fujii, N.Tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018340710
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
- Author(s)
  M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 8639-8643
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Growth of high-quality AlN at high growth rate by high-temperature MOVPE2006
- Author(s)
  N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solidi (c) 3
  
  Pages: 1617-1619
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT2006
- Author(s)
  Yoshikazu Hirose, Akira Honshio, takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Michinobu Tsuda, Hiroshi Amano, Isamu Akasaki
- Journal Title
  
  IEICE Trans. Electron. E89-C
  
  Pages: 64-1067
- NAID
  110007538789
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] A hydrogen-related shallow donor in GaN?2006
- Author(s)
  B.Monemar, P.P.Paskov, J.P.Bergman, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Physica B : Condensed Matter 376-377
  
  Pages: 460-463
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy2006
- Author(s)
  N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 2502-2504
- NAID
  40007227457
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Low-leakage-current enhancement-mode AIGaN/GaN heterostructure field-effect transistor using p-type gate contact2006
- Author(s)
  N.Tsuyukuchi, K.Nagamatsu, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates2006
- Author(s)
  K.Balakrishnan, N.Fujimoto, T.Kitano, A.Bandoh, M.Imura, K.Nakano, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro, K.Shimono, T.Riemann, J.Christen
- Journal Title
  
  Physica Status Solidi (c) 3
  
  Pages: 1392-1395
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN2006
- Author(s)
  M.Tsuda, H.Furukawa, A.Honshio, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Physica Status Solidi (b) 243
  
  Pages: 1524-1528
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High On/Off Ratio in Enhancement-Mode Al_xGa_1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact2006
- Author(s)
  T.Fujii, N.tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018340710
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Dominant shallow acceptor enhanced by oxygen doping in GaN2006
- Author(s)
  B.Monemar, P.P.Paskov, F.Tuomisto, K.Saarinen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, S.Kimura
- Journal Title
  
  Physica B : Condensed Matter 376-377
  
  Pages: 440-443
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High On/Off Ratio in Enhancement-Mode AlxGal-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact2006
- Author(s)
  T.Fujii, N.Tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics Vol.45
- Data Source
  KAKENHI-PROJECT-18760259
[Patent] 緑色発光素子の製造方法2024
- Inventor(s)
  竹内哲也、上山智、岩谷素顕、野津浩太朗、中野元貴
- Industrial Property Rights Holder
  学校法人　名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2024-007922
- Filing Date
  2024
- Data Source
  KAKENHI-PROJECT-23H05460
[Patent] 半導体発光素子および半導体発光素子の製造方法2019
- Inventor(s)
  上山智、竹内哲也、岩谷素顕、赤崎勇、他
- Industrial Property Rights Holder
  名城大、豊田合成、小糸製作所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2019-182829
- Filing Date
  2019
- Data Source
  KAKENHI-PLANNED-16H06416
[Patent] 半導体発光素子および半導体発光素子の製造方法2019
- Inventor(s)
  上山智、竹内哲也、岩谷素顕、赤崎勇、W. Lu、他
- Industrial Property Rights Holder
  名城大、豊田合成、小糸製作所
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2019-164083
- Filing Date
  2019
- Data Source
  KAKENHI-PLANNED-16H06416
[Patent] 紫外線受光素子及び紫外線受光素子の製造方法2018
- Inventor(s)
  岩谷素顕、牛田彩希、吉川陽、永瀬和宏、永富隆清
- Industrial Property Rights Holder
  名城大学、旭化成
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2018-007606
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-15H02019
[Patent] 紫外線受光素子2017
- Inventor(s)
  岩谷素顕、牛田彩希、吉川陽、永瀬和宏
- Industrial Property Rights Holder
  名城大学、旭化成
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-116187
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-15H02019
[Patent] 発光体発光素子および発光体発光素子の製造方法2017
- Inventor(s)
  上山智、竹内哲也、岩谷素顕、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-127720
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-15H02019
[Patent] ⅲ族窒化物半導体発光素子とその製造方法2017
- Inventor(s)
  竹内哲也、上山智、岩谷素顕、赤崎勇、小島久範、安田俊輝、飯田一喜
- Industrial Property Rights Holder
  名城大学、豊田合成
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-217383
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-15H02019
[Patent] 窒化物半導体基板とその製造方法2017
- Inventor(s)
  岩谷素顕、吉川陽、森下朋浩
- Industrial Property Rights Holder
  名城大学、旭化成
- Industrial Property Rights Type
  特許
- Filing Date
  2017
- Overseas
- Data Source
  KAKENHI-PROJECT-15H02019
[Patent] 半導体発光素子および半導体発光素子の製造方法2017
- Inventor(s)
  上山智、竹内哲也、岩谷素顕、赤﨑勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-127720
- Filing Date
  2017
- Data Source
  KAKENHI-PLANNED-16H06416
[Patent] 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子2017
- Inventor(s)
  竹内哲也、岩谷素顕、赤塚泰斗、岩山章、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-217351
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-15H02019
[Patent] 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子2017
- Inventor(s)
  竹内哲也、不破亮太、岩谷素顕、岩山章、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-217348
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-15H02019
[Patent] 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法2016
- Inventor(s)
  竹内哲也、岩谷素顕、赤﨑勇、赤木孝信
- Industrial Property Rights Holder
  竹内哲也、岩谷素顕、赤﨑勇、赤木孝信
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-144041
- Filing Date
  2016-07-22
- Data Source
  KAKENHI-PROJECT-26286045
[Patent] 窒化物半導体素子及びその製造方法2016
- Inventor(s)
  竹内哲也、岩谷素顕、赤﨑勇、赤塚泰斗、赤木孝信
- Industrial Property Rights Holder
  竹内哲也、岩谷素顕、赤﨑勇、赤塚泰斗、赤木孝信
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-154227
- Filing Date
  2016-08-05
- Data Source
  KAKENHI-PROJECT-26286045
[Patent] 窒化物半導体AlGaN系紫外半導体レーザ2016
- Inventor(s)
  岩谷素顕、竹内哲也、上山智、赤崎勇、川瀬祐太、安田俊樹
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-242891
- Filing Date
  2016-12-15
- Data Source
  KAKENHI-PROJECT-15H02019
[Patent] 窒化物半導体発光素子2016
- Inventor(s)
  竹内哲也、高須賀大貴、岩谷素顕、赤﨑勇
- Industrial Property Rights Holder
  竹内哲也、高須賀大貴、岩谷素顕、赤﨑勇
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-038890
- Filing Date
  2016-03-01
- Data Source
  KAKENHI-PROJECT-26286045
[Patent] npn型窒化物半導体発光素子の製造方法、およびnpn型窒化物半導体発光素子2015
- Inventor(s)
  竹内哲也、桑野侑香、岩谷素顕、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Filing Date
  2015-02-23
- Overseas
- Data Source
  KAKENHI-PROJECT-26286045
[Patent] 窒化物半導体発光素子及びその製造方法2015
- Inventor(s)
  竹内哲也、小森大資、財部覚、岩谷素顕、赤崎勇
- Industrial Property Rights Holder
  竹内哲也、小森大資、財部覚、岩谷素顕、赤崎勇
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2015-084802
- Filing Date
  2015-04-17
- Data Source
  KAKENHI-PROJECT-26286045
[Patent] 窒化物半導体発光素子2014
- Inventor(s)
  竹内哲也、岩谷素顕、赤崎　勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Filing Date
  2014-06-16
- Overseas
- Data Source
  KAKENHI-PROJECT-26286045
[Patent] 窒化物半導体発光素子の製造方法、および窒化物半導体発光素子2014
- Inventor(s)
  竹内哲也、桑野侑香、岩谷素顕、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-035192
- Filing Date
  2014-02-26
- Overseas
- Data Source
  KAKENHI-PROJECT-23560015
[Patent] 電流狭窄を有する窒化物半導体発光素子とその製造方法2013
- Inventor(s)
  竹内哲也、桑野侑香、岩谷素顕、上山智、赤﨑勇
- Industrial Property Rights Holder
  竹内哲也、桑野侑香、岩谷素顕、上山智、赤﨑勇
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-025361
- Filing Date
  2013-02-13
- Data Source
  KAKENHI-PROJECT-23560015
[Patent] 電流狭窄を有する窒化物半導体発光素子とその製造方法2013
- Inventor(s)
  竹内哲也、桑野侑香、岩谷素顕、上山智、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-025361
- Filing Date
  2013-02-13
- Overseas
- Data Source
  KAKENHI-PROJECT-23560015
[Patent] 半導体発光素子アレイおよびその製造方法2013
- Inventor(s)
  竹内哲也、渡邉雅大、岩谷素顕、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-155760
- Filing Date
  2013-07-26
- Overseas
- Data Source
  KAKENHI-PROJECT-23560015
[Patent] 窒化物半導体発光素子2013
- Inventor(s)
  竹内哲也、岩谷素顕、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-06-18
- Data Source
  KAKENHI-PROJECT-25000011
[Patent] 半導体発光素子アレイおよびその作成方法2013
- Inventor(s)
  竹内哲也、渡邉雅大、岩谷素顕、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-155760
- Filing Date
  2013-07-26
- Data Source
  KAKENHI-PROJECT-23560015
[Patent] 分極を有する半導体を用いた半導体光素子2013
- Inventor(s)
  竹内哲也、岩谷素顕、赤崎勇、天野浩
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-12-11
- Data Source
  KAKENHI-PROJECT-25000011
[Patent] 自立基板の製造方法、AlN自立基板及びIII族窒化物半導体デバイス2011
- Inventor(s)
  天野浩、岩谷素顕
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2011-060889
- Filing Date
  2011-03-18
- Data Source
  KAKENHI-PLANNED-18069011
[Patent] 半導体素子、及び半導体素子の転位低減方法2010
- Inventor(s)
  岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Industrial Property Rights Holder
  名城大学
- Patent Publication Number
  2012-009784
- Filing Date
  2010-06-28
- Data Source
  KAKENHI-PROJECT-21686034
[Patent] 特許III族窒化物系太陽電池2010
- Inventor(s)
  岩谷素顕、竹内哲也、上山智、天野浩、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2010-146771
- Filing Date
  2010
- Data Source
  KAKENHI-PROJECT-21686034
[Patent] 特許III族窒化物系太陽電池及びその製造方法2010
- Inventor(s)
  岩谷素顕、竹内哲也、上山智、天野浩
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2010-146773
- Filing Date
  2010
- Data Source
  KAKENHI-PROJECT-21686034
[Patent] 白色発光ダイオード2010
- Inventor(s)
  岩谷素顕、上山智、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Patent Publication Number
  2011-249460
- Filing Date
  2010-05-25
- Data Source
  KAKENHI-PROJECT-21686034
[Patent] 特許半導体素子、及び半導体素子の転位低減方法2010
- Inventor(s)
  岩谷素顕、竹内哲也、上山智、天野浩、赤崎勇
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2010-146772
- Filing Date
  2010
- Data Source
  KAKENHI-PROJECT-21686034
[Patent] 発光素子、発光素子用サファイア基板、および発光素子用サファイア基板の製造方法2008
- Inventor(s)
  上山智、岩谷素顕、天野浩、赤崎勇、鈴木敦志、金子由基夫
- Industrial Property Rights Holder
  エルシード(株)
- Industrial Property Number
  2008-242943
- Filing Date
  2008-09-01
- Data Source
  KAKENHI-PROJECT-18560353
[Patent] 発光素子及びその製造方法2008
- Inventor(s)
  上山智, 岩谷素顕, 天野浩, 赤崎勇, 鈴木敦志, 寺前文晴, 北野司, 近藤俊行
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2008-283595
- Filing Date
  2008-11-04
- Data Source
  KAKENHI-PROJECT-18560353
[Patent] 発光素子、発光素子用サファイア基板及び発光素子用サファイア基板の製造方法2008
- Inventor(s)
  上山智, 岩谷素顕, 天野浩, 赤崎勇, 鈴木敦志, 金子由基夫
- Industrial Property Rights Holder
  エルシード(株)
- Industrial Property Number
  2008-242943
- Filing Date
  2008-09-22
- Data Source
  KAKENHI-PROJECT-18560353
[Patent] 発光素子及びその製造方法2008
- Inventor(s)
  上山智、岩谷素顕、天野浩、赤崎勇、鈴木敦志、寺前文晴、北野司、近藤俊行
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2008-283595
- Filing Date
  2008-11-04
- Data Source
  KAKENHI-PROJECT-18560353
[Patent] 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置2006
- Inventor(s)
  津田道信, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Industrial Property Rights Holder
  京セラ株式会社、学校法人名城大学
- Filing Date
  2006-02-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Patent] 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置2006
- Inventor(s)
  津田道信, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Industrial Property Rights Holder
  京セラ株式会社、学校法人名城大学
- Filing Date
  2006-03-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Hydrogen cleaning for High-quality AlInN layers2024
- Author(s)
  Taichi Nishikawa, Kana Shibata, Tsuyoshi Nagasawa, Kenta Kobayashi, Ruka Watanabe, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
- Organizer
  ISPlasma 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Epitaxial growths of highly efficient GaN VCSELs with in situ cavity length control2024
- Author(s)
  Taichi Nishikawa, Kenta Kobayashi, Ruka Watanabe, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
- Organizer
  LEDIA 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] 共振器長制御された高効率GaN系面発光レーザーの発光径依存性2024
- Author(s)
  柳川光樹1、渡邊琉加1、小林憲汰1、西川太一1、竹内哲也1、上山智1、岩谷素顕1
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] PEDOT-LEDへの局在型表面プラズモン効果導入に関する検討2024
- Author(s)
  坂本龍星1、加藤悠真1、伊藤涼太郎1、上山智1、岩谷素顕1、竹内哲也1、松山絵美2、鈴木敦志2
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] In-situ structural controls during the GaN-based VCSEL growths2024
- Author(s)
  T Takeuchi, S Kamiyama, M Iwaya
- Organizer
  Photonics West Gallium Nitride Materials and Devices XIX
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Progress in UV-B laser diodes on lattice-relaxed high-quality AlGaN fabricated on sapphire substrates2024
- Author(s)
  M Iwaya, S Iwayama, T Takeuchi, S Kamiyama, H Miyake
- Organizer
  Photonics West Gallium Nitride Materials and Devices XIX
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] PEDOT/PSSを正孔輸送層に用いたGaInN系青色LEDにおけるJ-V特性改善に関する研究2024
- Author(s)
  加藤悠真1、上山智1、竹内哲也1、岩谷素顕1、松山絵美2、鈴木敦志2
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 化学機械研磨を用いたAlGaN系UV-B LDの結晶表面改善2024
- Author(s)
  山田凌矢1、近藤涼輔1、西林到真1、井本圭紀1、齋藤巧夢1、丸山竣大1、三宅倫太郎1、佐々木祐輔1、岩山章1、岩谷素顕1、竹内哲也1、上山智1、三宅秀人2
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Effects of barrier growth temperature on green GaInN LED characteristics2024
- Author(s)
  M. Yanagawa, M. Nakano, K. Nozu, R. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, K. Nonaka, Y. Kuraoka, T. Yoshino
- Organizer
  ISPlasma 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] 共振器長制御された高効率GaN系面発光レーザーの発光径依存性2024
- Author(s)
  柳川光樹、渡邊琉加、小林憲汰、西川太一、竹内哲也、上山智、岩谷素顕
- Organizer
  第71回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] ウェットエッチングしたAlNナノピラー上に作製したAlGaN系UV-Bレーザーの光学特性評価2024
- Author(s)
  井本圭紀1、三宅倫太郎1、近藤涼輔1、山田凌矢1、西林到真1、松原衣里1、齋藤巧夢1、丸山竣大1、佐々木祐輔1、岩山章1、岩谷素顕1、竹内哲也1、上山智1、三宅秀人2
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 1μmの周期凹凸パターン構造AlN上の波長290nmのAlGaN系UV-B LD2024
- Author(s)
  田中隼也1、手良村昌平1、下川萌葉1、山田和輝1、大森智也1、岩山章1,2、佐藤恒輔1,3、三宅秀人2、岩谷素顕1、竹内哲也1、上山智1、赤﨑勇1,4
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] トンネル接合を用いた積層型RGBモノリシックGaInN系μLEDアレイの作製とメタバース応用への挑戦2024
- Author(s)
  岩谷素顕1、齋藤竜成1、末広好伸1、竹内哲也1、上山智1、飯田大輔2、大川和宏2
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Aperture diameter dependences of highly efficient GaN VCSELs with well-controlled cavity lengths2024
- Author(s)
  Mitsuki Yanagawa, Ruka Watanabe, Kenta Kobayashi, Taichi Nisikawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya
- Organizer
  LEDIA 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] モノリシック型μLEDアレイにおける迷光のサファイア基板膜厚依存性2024
- Author(s)
  長谷川直希1、齋藤竜成1、末広好伸1、岩谷素顕1、竹内哲也1、上山智1
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] GaInN下地層とその場共振器長制御を有する高効率GaN系VCSELのエピタキシャル成長2024
- Author(s)
  西川大智1、小林憲汰1、渡邊琉加1、柳川光樹1、竹内哲也1、上山智1、岩谷素顕1
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 縦型AlGaN系UV-Bレーザーダイオードの作製2024
- Author(s)
  岩谷素顕1、西林到真1、近藤凉輔1、山田凌矢1、井本圭紀1、岩山章1、竹内哲也1、上山智1、三宅秀人2
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] GaInN/GaN多重量子殻LEDにおけるプラズマ発光モニターを用いた(0001)面ITOエッチングに関する検討2024
- Author(s)
  服部祐汰1、上山智1、竹内哲也1、岩谷素顕1、稲葉颯磨1、島綾香1、伊井詩織1、高橋美月1、山中優輝1、久保田光星1
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] In situ structural controls during the GaN-based VCSEL growths2024
- Author(s)
  T. Takeuchi, S. Kamiyama, and M. Iwaya
- Organizer
  SPIE Photonics West 2024
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Fabrication and characterizations of GaN-based nanowire/multi-quantum shell (MQS) LEDs2024
- Author(s)
  Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya
- Organizer
  Photonics West Light-Emitting Devices, Materials, and Applications XXVIII
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Hakki-Paoli法を用いたUV-B半導体レーザーの利得スペクトルの測定2024
- Author(s)
  齋藤巧夢1、近藤涼輔1、松原衣里1、西林到真1、井本圭紀1、山田凌矢1、三宅倫太郎1、丸山竣大1、岩山章1、岩谷素顕1、竹内哲也1、上山智1、三宅秀人2
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 光干渉効果と封止構造を応用した深紫外LEDの高効率化2024
- Author(s)
  奥野浩司1,2、岩月梨恵2、大矢昌輝1、齋藤義樹1,2、袴田新太郎1、松嶌健史1、川岡あや1、下西正太1、石黒永孝2、上山智2、岩谷素顕2、竹内哲也2
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] AlGaN based-UVLED p-type electrode:Yield evaluation of ITO/Al and Ni/Au2024
- Author(s)
  Naoki Hamashima, Rie Iwatsuki, Maho Fujita, Hayata Takahata, Tomoaki Kachi, Ryunosuke Oka, Hisanori Ishiguro, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Koji Okuno and Yoshiki Saito
- Organizer
  The 16th International Symposium on Advanced Plasma Science (ISPlasma2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Ga(In)Nトンネル接合の電気的特性および結晶学的特性2023
- Author(s)
  宇田陽、小林憲汰、可知朋晃、竹内哲也、上山智、岩谷素顕、田中崇之
- Organizer
  第84回　秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Investigation of barriers in green GaInN quantum wells on GaN substrates2023
- Author(s)
  Kotaro Nozu, Motoki Nakano, Ruka Watanabe, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Kentaro Nonaka, Yoshitaka Kuraoka, Takashi Yoshino
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Status and prospects of blue vertical-cavity surface-emitting lasers (VCSELs)2023
- Author(s)
  T. Takeuchi, S. Kamiyama, M. Iwaya
- Organizer
  The 5th Optical Wireless and Fiber Power Transmission Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] その場反射率スペクトル測定を用いたAlInN/GaN DBRの高精度膜厚制御2023
- Author(s)
  小林憲汰、渡邊琉加、西川大智、竹内哲也、岩谷素顕、上山智
- Organizer
  電子情報通信学会　レーザー・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Electrical properties of Mg-doped Al0.35Ga0.65N contact/graded AlGaN layer2023
- Author(s)
  H. Takahata, T. Kachi, M. Fujita, N. Hamashima, R. Oka, H. Ishiguro, T. Takeuchi, S. Kamiyama, M. Iwaya, Y. Saito, K. Okuno
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Mg添加Al0.35Ga0.65Nコンタクト/組成傾斜AlGaN構造の電気的特性2023
- Author(s)
  高畑勇太, 可知朋晃, 藤田真帆, 浜島直紀, 岡龍乃介, 石黒永孝, 竹内哲也, 上山智, 岩谷素顕, 齋藤義樹, 奥野浩司
- Organizer
  第84回　応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] GaN基板上緑色GaInN量子井戸における障壁層の検討2023
- Author(s)
  野津浩太朗、中野元貴、渡邊琉加、柳川光樹、竹内哲也、上山智、岩谷素顕、野中健太朗、倉岡義孝、吉野隆史
- Organizer
  第84回　応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] ITO電極とNb2O5スペーサ層を含むGaN面発光レーザ共振器長制御を活用したGaN系面発光レーザの作製2023
- Author(s)
  渡邊琉加、小林憲汰、柳川光樹、竹内哲也、上山智、岩谷素顕
- Organizer
  電子情報通信学会　レーザー・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] AlGaN系UV-B LDにおけるシャープなヘテロ界面形成に関する検討2023
- Author(s)
  近藤涼輔1、服部光希1、井本圭紀1、山田凌矢1、岩山章1、岩谷素顕1、竹内哲也1、上山智1、三宅秀人2
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Toward enhancement of light output power of AlGaN-based UV-B laser diodes2023
- Author(s)
  Motoaki Iwaya1, Sho Iwayama1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2
- Organizer
  The 6th International Workshop on Ultraviolet Materials and Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] AlGaN量子井戸形成時における成長中断の影響2023
- Author(s)
  岡龍乃介1、可知朋晃1、高畑勇太1、石黒永孝1、竹内哲也1、上山智1、岩谷素顕1、奥野浩司2、齋藤義樹2
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Progress in UV-B laser diodes fabricated on lattice relaxed AlGaN2023
- Author(s)
  Motoaki Iwaya, Ryosuke Kondo, Ryota Hasegawa, Ayumu Yabutani, Eri Matsubara, Toma Nishibayashi, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
- Organizer
  SPIE Photonics West Gallium Nitride Materials and Devices XVIII
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Development of AlGaN-based laser diodes in the UV-A to UV-B regions2023
- Author(s)
  Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
- Organizer
  SPIE Photonics West Novel In-Plane Semiconductor Lasers XXII
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Influence of stray light in monolithic μLED arrays and its reduction2023
- Author(s)
  Naoki Hasegawa1, Tatsunari Saito1, Keigo Imura1, Yoshinobu Suehiro1, Tetsuya Takeuti1, Satoshi Kamiyama1, Motoaki Iwaya1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] AlGaN量子井戸形成時における成長中断の影響2023
- Author(s)
  岡龍乃介, 可知朋晃, 高畑勇太, 石黒永孝, 竹内哲也, 上山智, 岩谷素顕, 奥野浩司, 齋藤義樹
- Organizer
  第84回　応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Wet etching effect of AlN nanopillars in AlGaN grown on AlN nanopillars2023
- Author(s)
  Yoshinori Imoto1, Ryota Hasegawa1, Ayumu Yabutani1, Koki Hattori1, Ryosuke Kondo1, Ryoya Yamada1, Keigo Imura1, Naoki Hasegawa1, Sho Iwayama1, MotoakiIwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] In-situ layer thickness control of AlInN/GaN DBRs with in-situ reflectivity spectra measurements2023
- Author(s)
  Kenta Kobayashi1, Tsuyoshi Nagasawa1, Kana Shibata1, Taichi Nishikawa1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 飽和蒸気圧水でAlxGa1-xNを処理することにより形成された変質層の解析2023
- Author(s)
  松原衣里1、近藤涼輔1、西林到真1、山田凌矢1、井本圭紀1、服部光希1、岩山章1、岩谷素顕1、竹内哲也1、上山智1、小林信太郎3、山本泰司3、三宅秀人2
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 化学機械研磨したAlGaN上にホモエピタキシャル再成長2023
- Author(s)
  山田凌矢1、近藤涼輔1、服部光希1、西林到真1、井本圭紀1、岩山章1、岩谷素顕1、竹内哲也1、上山智1、三宅秀人2
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Fabrication of vertical UV light-emitting devices by separation of sapphire substrates2023
- Author(s)
  Motoaki Iwaya, Toma Nishibayashi, Moe Shimokawa, Ryota Hasegawa, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Ryosuke Kondo, Ayumu Yabutani, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Kohei Miyoshi, Koichi Naniwae, Akihiro Yamaguchi
- Organizer
  SPIE Photonics West Light-Emitting Devices, Materials, and Applications XXVII
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] GaInN-based blue LED with PEDOT/PSS hole transporting layer2023
- Author(s)
  YUMA KATO1, SATOSHI KAMIYAMA1, TETSUYA TAKEUCHI1, MOTOAKI IWAYA1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] GaInN/GaN多重量子殻LEDにおけるプラズマ発光モニターを用いたCl2エッチングによる(0001)面の高抵抗化に関する検討2023
- Author(s)
  服部祐汰1、稲葉颯磨1、島綾香1、伊井詩織1、高橋美月1、山中優輝1、久保田光星1、上山智1、岩谷素顕1、竹内哲也1
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] サファイア基板上AlNテンプレートに対するAlN中間層膜厚の影響2023
- Author(s)
  可知朋晃, 高畑勇太, 岡龍乃介, 石黒永孝, 竹内哲也, 上山智, 岩谷素顕, 齋藤義樹, 奥野浩司
- Organizer
  第84回　応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] AlGaN系UV-B波長レーザダイオードの深さ分解ナノビームX線回折2023
- Author(s)
  谷口翔太1、林侑介1、藤平哲也1、隅谷和嗣2、今井康彦2、木村滋2、岩谷素顕3、三宅秀人4、酒井朗1
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 水素クリーニングを用いた高品質AlInN下地層2023
- Author(s)
  西川大智、柴田夏奈、長澤剛、小林憲汰、渡邊琉加、柳川光樹、竹内哲也、上山智、岩谷素顕
- Organizer
  第84回　秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] UV-B Laser Diode Realized by Two Breakthroughs of Lattice-relaxed High-quality AlGaN and Polarized Doping2023
- Author(s)
  Motoaki Iwaya1, Sho Iwayama1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2
- Organizer
  European Materials Research Society
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] GaN基板上高InNモル分率GaInN量子井戸におけるトレンチ欠陥形成の抑制2023
- Author(s)
  中野元貴、野津浩太朗、渡邊琉加、柳川光樹、竹内哲也、上山智、岩谷素顕
- Organizer
  第15回　ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] 窒化物半導体緑色レーザー特性における端面反射率の影響2023
- Author(s)
  臼井広大、東莉大、竹内哲也、岩谷素顕、上山智
- Organizer
  第84回　秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Investigation of barriers in green GaInN quantum wells on GaN substrates2023
- Author(s)
  kotaro Nozu1, Motoki Nakano1, Ruka watanabe1, Mitsuki Yanagawa1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1, Kentaro Nonaka2, Yoshitaka Kuraoka2, Takashi Yoshino2
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] In-situ layer thickness control of AlInN/GaN DBRs with in-situ reflectivity spectra measurements2023
- Author(s)
  Kenta Kobayashi, Ruka Watanabe, Tsuyoshi Nagasawa, Kana Shibata, Taichi Nishikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Homoepitaxial regrowth of AlGaN on chemically-mechanically polished AlGaN templates and its application to UV-B laser diodes2023
- Author(s)
  Ryoya Yamada1, Ryosuke Kondo1, Koki Hattori1, Toma Nishibayashi1, Yoshinori Imoto1, Eri Matsubara1, Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuhi1, Satoshi Kamiyama1, HIdeto Miyake2
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Mg添加Al0.35Ga0.65Nコンタクト/組成傾斜AlGaN構造の電気的特性2023
- Author(s)
  高畑勇汰1、可知朋晃1、藤田真帆1、浜島直紀1、岡龍之介1、石黒永孝1、竹内哲也1、上山智1、岩谷素顕1、齋藤義樹2、奥野浩司
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] GaInN下地層とその場共振器長制御を有する高効率GaN系VCSELのエピタキシャル成長2023
- Author(s)
  西川大智、小林憲汰、渡邊琉加、柳川光樹、竹内哲也、上山智、岩谷素顕
- Organizer
  第71回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Three-dimensional tomographic analysis of AlGaN-based UV-B wavelength laser diodes2023
- Author(s)
  Shota Taniguchi1, Yusuke Hayashi1, Tetsuya Tohei1, Kazushi Sumitani2, Yasuhiko Imai2, Shigeru Kimura2, Motoaki Iwaya3, Hideto Miyake4, Akira Sakai1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Fabrication of stacked RGB monolithic GaInN-based μLED arrays2023
- Author(s)
  Tatsunari Saito1, Naoki hasegawa1, Keigo Imura1, Yoshinobu Suehiro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Daisuke Iida2, Kazuhiro Ohkawa2, Motoaki Iwaya1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] サファイア基板上AlNテンプレートに対するAlN中間層膜厚の影響2023
- Author(s)
  可知朋晃1、高畑勇汰1、岡龍乃介1、石黒永孝1、竹内哲也1、上山智1、岩谷素顕1、齋藤義樹2、奥野浩司2
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Optimization of p-AlGaN electron blocking layer in GaInN/GaN multi-quantum shell LEDs2023
- Author(s)
  Yuta Hattori1, Soma Inaba1, Ayaka Shima1, Shiori Ii1, Mizuki Takahashi1, Yuki Yamanaka1, Kosei Kubota1, Satoshi Kamiyama1, Tetusya Takeuchi1, Motoaki Iwaya1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Improvement of carrier injection efficiency of UV-B LDs by through polarization charge modulation2023
- Author(s)
  Ryosuke Kondo1, Koki Hattori1, Yoshinori Imoto1, Ryoya Yamada1, Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Optimization of in-reactor in-situ activation annealing conditions for tunnel junction layers of multi-quantum shell GaN-based LDs2023
- Author(s)
  Mizuki Takahashi1, Yuki Yamanaka1, Shiori Ii1, Ayaka Shima1, Soma Inaba1, Kosei Kubota1, Yuta Hattori1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Morphological and emission properties of GaInN/GaN multi-quantum shell nanowires with GaInN/GaN superlattice2023
- Author(s)
  Soma Inaba1, Weifang Lu2, Ayaka Shima1, Shiori Ii1, Mizuki Takahashi1, Yuki Yamanaka1, Yuta Hattori1, Kosei Kubota1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki iwaya1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Development of exfoliation technology for AlGaN from sapphire substrates using saturated vapor pressure heated water and analysis of the mechanism2023
- Author(s)
  Eri Matsubara1, Toma Nishibayashi1, Ryosuke Kondo1, Ryoya Yamada1, Yoshinori Imoto1, Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Shintaro Kobayashi3, Taiji Yamamoto3, Hideto Miyake2
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Effects of Interlayer Thickness on AlN Templates with Sapphire Substrates2023
- Author(s)
  Tomoaki Kachi1, Hayata Takahata1, Ryunosuke Oka1, Hisanori Ishiguro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Yoshiki Saito2, Koji Okuno2
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Effect of underlying layer on red GaInN-based multi-quantum shells on hexagonal nanopyramid structures2023
- Author(s)
  Ayaka Shima1, Weifang Lu2, Mizuki Takahashi1, Yuki Yamanaka1, Soma Inaba1, Shiori Ii1, Yuta Hattori1, Kosei Kubota1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Electrical properties of Mg-doped Al0.35Ga0.65N contact/graded AlGaN layer2023
- Author(s)
  Hayata Takahata1, Tomoaki Kachi1, Maho Fujita1, Naoki Hamashima1, Ryunosuke Oka1, Hisanori Ishiguro1, Tetsuya Tackeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Yoshiki Saito2, Koji Okuno2
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Effects of AlN Interlayer Thickness on AlN Templates with Sapphire Substrates2023
- Author(s)
  Tomoaki Kachi, Hayata Takahata, Ryunosuke Oka, Hisanori Ishiguro, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Yoshiki Saito, Koji Okuno
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H05460
[Presentation] Progress in the development of UV-B laser diodes fabricated on sapphire substrates2023
- Author(s)
  Motoaki Iwaya1, Sho Iwayama1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2
- Organizer
  14th International Conference on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] Increasing the light output power of AlGaN-based ultraviolet-B band laser diodes fabricated on periodic AlN nanopillars2022
- Author(s)
  Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
- Organizer
  International workshop on nitride semiconductors 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 高品質AlGaN結晶の作製とデバイス応用2022
- Author(s)
  岩谷素顕，岩山　章，竹内　哲也, 上山　智, 三宅秀人
- Organizer
  ワイドギャップ半導体学会　チュートリアル：ワイドギャップ半導体光・電子デバイスの最前線
- Invited
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] AlGaN-based UV-B laser diode fabricated on sapphire substrate and its progress2022
- Author(s)
  Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake
- Organizer
  APWS 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] AlGaN-Based UV-B Laser Diodes Fabricated on Lattice-Relaxed AlGaN Formed on Sapphire Substrates2022
- Author(s)
  Motoaki Iwaya, Sho Iwayama, Tetsuya Takeuchi , Satoshi Kamiyama, Hideto Miyake
- Organizer
  The 5th International workshop on ultraviolet materials and devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 深紫外LDの最近の進展2022
- Author(s)
  岩谷素顕，岩山　章，竹内　哲也, 上山　智, 三宅秀人
- Organizer
  光とレーザーの科学技術フェア2022
- Invited
- Data Source
  KAKENHI-PROJECT-22H00304
[Presentation] 近接昇華法による4H-SiCのB,N高濃度コドーピングに関する検討2021
- Author(s)
  山根耀真、Weifang Lu、柳井光佑、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] AlGaN系UV-B LD構造における注入効率向上に関する検討2021
- Author(s)
  薮谷歩武，大森智也，田中隼也，山田和輝，佐藤恒輔，岩山章，岩谷素顕，竹内哲也，上山智，赤﨑勇，三宅秀人
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaInN 系量子殻の光学特性改善のためのGaInN/GaN超格子の検討2021
- Author(s)
  中山奈々美、Weifang Lu、曽根直樹、伊藤和真、宮本義也、奥田廉士、勝呂紗衣、神野幸美、山村志織、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Improvement of device performance in UV-B laser diodes2021
- Author(s)
  M. Iwaya, S. Tanaka, Y. Ogino, M. Shimokawa,K. Yamada, T. Omori, S. Ishizuka, S. Teramura,K. Sato, S. Iwayama, T. Takeuchi, S. Kamiyama,I. Akasaki, H. Miyake
- Organizer
  SPIE Photonics West 2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 量子殻特異構造の作製と光デバイス応用2021
- Author(s)
  上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 高温スパッタ法によるScAlMgO4基板上AlNバッファ層の検討2021
- Author(s)
  寶藏圭祐、韓東杓、眞野稜也、高橋遼、藤木領人、平松稜也、澤井奏人、上山智、竹内哲也、岩谷素顕、赤﨑勇、福田承生、藤井高志
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] In-situ activation of MOVPE-grown GaN tunnel junctions2021
- Author(s)
  T. Ito, M. Odawara, M. Tasaki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 2つの手法を組み合わせたシミュレーション法によるナノパターン化基板を用いたGaInN系緑色LEDの光取り出し効率の計算2021
- Author(s)
  平松稜也, 韓東杓, 眞野稜也, 高橋遼, 藤木領人, 澤井奏人, 寶藏圭祐、上山智, 竹内哲也、岩谷素顕, 赤﨑勇
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 量子殻デバイスへのトンネル接合導入のためのm面GaN基板上トンネル接合成長に関する検討2021
- Author(s)
  山村志織、宮本義也、曽根直樹、Weifang Lu、奥田廉士、伊藤和真、神野幸美、中山奈々美、勝呂紗衣、奥野浩司、水谷浩一、飯田一喜、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] トンネル接合を用いた量子殻レーザの実現に向けたn-GaNへの電極形成に関する検討2021
- Author(s)
  神野幸美,　奥田廉士,　水谷浩一,　奥野浩司,　飯田一喜,　宮本義也,　山村志織,　曽根直樹,　伊藤和真,　勝呂紗衣,　Weifang Lu、中山奈々美、上山智、竹内哲也、岩谷素顕、赤崎勇
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Emission wavelength control of GaInN/GaN multi-quantum shells /nanowires grown by metalorganic vapour phase epitaxy2021
- Author(s)
  K. Ito, W. Lu, N. Sone, Y. Miyamoto, R. Okuda, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  SPIE Photonics West 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] MOVPE growth and fabrication of multi-quantum-shell-based blue lasers2021
- Author(s)
  S. Kamiyama, W. Lu, N. Sone, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction2021
- Author(s)
  Y. Miyamoto, N. Sone, W. Lu, K. Ito, R. Okuda, K. Iida, M. Ohya, K. Okuno, K. Mizutani, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  SPIE Photonics West 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Fabrication of index-guided multi-quantum shell lasers toward room-temperature pulsed lasing operation2021
- Author(s)
  S. Kamiyama T. Takeuchi, M. Iwaya, and I. Akasaki
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 量子殻/トンネル接合を用いたナノワイヤLD実現に向けたGaN結晶中の不純物ドーピング評価2021
- Author(s)
  曽根直樹、宮本義也、奥田廉士、伊藤和真、山村志織、神野幸美、勝呂紗衣、中山奈々美、奥野浩司、水谷浩一、飯田一喜、Weifang Lu、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaInN系量子殻LEDのEL特性2021
- Author(s)
  勝呂紗衣、Weifang Lu、伊藤和真、中山奈々美、曽根直樹、奥田廉士、宮本義也、神野幸美、山村志織、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Device fabrication for multiple quantum shell nanowires based laser diodes2021
- Author(s)
  R. Okuda, W. Lu, N. Sone, Y. Miyamoto, K. Ito, K. Iida, M. Ohya, K. Okuno, K. Mizutani, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  SPIE Photonics West 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 量子殻活性層及びトンネル接合を有するレーザ構造の作製と評価2021
- Author(s)
  奥田廉士、Weifang Lu、曽根直樹、飯田一喜、奥野浩司、水谷浩一、宮本義也、伊藤和真、神野幸美、勝呂紗衣、中山奈々美、山村志織、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] トンネル接合を用いた屈折率導波型量子殻レーザ構造の検討2020
- Author(s)
  奥田廉士、Weifang Lu、曽根直樹、飯田一喜、大矢昌輝、奥野浩司、水谷浩一、宮本義也、伊藤和真、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 高品質AlGaN結晶の結晶成長とその上に作製したUV-B半導体レーザ2020
- Author(s)
  岩谷素顕、佐藤恒輔、田中隼也、手良村昌平、大森智也、山田和輝、石塚彩花、下川萌葉、荻野雄矢、岩山章、竹内哲也、上山智、赤﨑勇、三宅秀人
- Organizer
  第８１回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] ITOを用いた窒化物半導体量子殻LED長波長発光デバイスの作製2020
- Author(s)
  伊藤和真、Weifang Lu、曽根直樹、宮本義也、奥田廉士、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第12回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] AlGaN UVB レーザダイオードのキャリア注入効率の算出2020
- Author(s)
  佐藤恒輔、大森智也、山田和輝、田中隼也、石塚彩花、手良村昌平、岩山章、岩谷素顕、三宅秀人、竹内哲也、上山智、赤﨑勇
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] ミスト供給法を用いたAlInN層の熱酸化の低温化2020
- Author(s)
  松本浩輝、岩山章、小出典克、小田原麻人、竹内哲也、上山智、岩谷素顕、丸山隆浩、赤崎勇
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] ナノワイヤ径及びピッチ制御によるナノワイヤLEDの発光波長制御2020
- Author(s)
  伊藤和真、W. Lu、曽根直樹、村上ヒデキ、後藤七美、寺澤美月、宮本義也、奥田廉士、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] トンネル接合を用いた量子殻LD 実現に向けた結晶成長評価2020
- Author(s)
  曽根直樹、奥田廉士、宮本義也、伊藤和真、飯田一喜、奥野浩司、水谷浩一、大矢昌輝、Weifang Lu、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] サファイア基板上AlGaN材料UVBレーザダイオードの構造検討2020
- Author(s)
  佐藤恒輔，山田和輝, 石塚彩花,田中隼也, 大森智也, 手良村昌平, 岩山章, 三宅秀人,岩谷素顕, 竹内哲也, 上山智, 赤﨑勇
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 組成傾斜AlGaNクラッド層を用いた UV -B LDの内部ロス評価2020
- Author(s)
  大森智也、石塚彩花、田中隼也、佐藤恒輔、安江信次、荻野雄矢、山田和輝、手良村昌平、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅秀人
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] UV -B LDにおける分極ドーピングp型AlGaNクラッド層のAl組成およびMg濃度依存性2020
- Author(s)
  山田和輝、佐藤恒輔、大安江信次、田中隼也、手良村昌平、荻野雄矢、大森智也、石塚彩花、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅秀人、寒川義裕、K. Sakowski
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] ナノパターンを形成したAlNおよび Al0.55Ga0.45N上へのAl0.55Ga0.45Nの結晶成長2020
- Author(s)
  手良村昌平、下川萌葉, 岩山章, 岩谷素顕 , 竹内哲也, 上山智, 赤﨑勇、正直花奈子、三宅秀人
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 近接昇華法による4H-SiCのB,N高濃度コドーピングに関する検討2020
- Author(s)
  山根耀真, 田中大稀, W. Lu, 柳井光佑, 上山智, 竹内哲也, 岩谷素顕, 赤﨑勇
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GRIN-SCH構造を用いたAlGaN系UV-Bレーザダイオードの最適化2020
- Author(s)
  田中隼也、佐藤恒輔、安江信次、荻野雄矢、山田和輝、石塚彩花、手良村昌平、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅秀人
- Organizer
  第８１回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 量子殻/トンネル接合発光デバイスの実現に向けたn-GaN埋め込み成長に関する検討2020
- Author(s)
  宮本義也、後藤七美、曽根直樹、飯田一喜、W. Lu、村上ヒデキ、寺澤美月、伊藤和真、奥田廉士、大矢昌輝、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 量子殻活性層およびトンネル接合を有するナノワイヤ発光デバイス実現に向けた結晶成長に関する検討2020
- Author(s)
  宮本義也、曽根直樹、Weifang Lu、奥田廉士、伊藤和真、奥野浩司、飯田一喜、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 高温アニールしたスパッタAlNテンプレート上に成長した Al 0.6Ga 0.4N厚膜のホモエピタキシャルAlN層依存性2020
- Author(s)
  下川萌葉，手良村昌平，岩山章，岩谷素顕，竹内哲也，上山智，赤﨑勇，三宅秀人
- Organizer
  第49回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Crystal growth and optical property2020
- Author(s)
  S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
- Organizer
  SPIE Photonics West 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 高濃度のホウ素・窒素が添加された蛍光SiCにおける光学特性2019
- Author(s)
  田中大稀，W. Lu，上山智，竹内哲也，岩谷素顕，赤﨑勇
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Cathodoluminescence enhancement in InGaN/GaN multiquantum shell/GaN nanowires core structure by using AlGaN undershells2019
- Author(s)
  W. Lu, N. Goto, N. Sone, K. Iida, A. Suzuki, H. Murakami, M. Terazawa, K. Nokimura, M. Takebayashi, M. Ohya, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Crystal growth and optical property of GaInN/GaN multi-quantum shells and GaN nanowire cores by metalorganic vapor phase epitaxy2019
- Author(s)
  S. Kamiyama, W. Lu, T. Takeuchi, M. Iwaya, I. Akasaki
- Organizer
  IEEE Photonics Conference 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] White LED in combination with bulk and porous fluorescent SiC2019
- Author(s)
  S. Kamiyama, A. Suzuki, W. Lu, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] MOCVD法によるナノワイヤLED上n-GaNキャップ層成長2019
- Author(s)
  後藤七美、曽根直樹、飯田一喜、Weifang Lu、鈴木敦志、軒村恭平、竹林穣、村上ヒデキ、寺澤美月、大矢昌輝、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 近接昇華法を用いた6H-SiCへのB,Nの高濃度コドーピングの検討2019
- Author(s)
  田中大稀, 黒川広朗, 上山智, 岩谷素顕, 竹内哲也, 赤﨑勇
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] コアシェル型ナノワイヤLEDのp-GaNシェル成長に関する検討2019
- Author(s)
  曽根直樹、後藤七美、飯田一喜、大矢昌輝、Weifang Lu、村上ヒデキ、寺澤美月、埋橋淳, 大久保忠勝, 宝野和博, 上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] ミラー形成にTMAHTMAHTMAHウェットエチングを用いたUV デバイスのデバイスのデバイスの特性評価2019
- Author(s)
  安江信次，佐藤恒輔，川瀬雄太，池田隼也、櫻木勇介，岩山章，岩谷素顕，上山智，竹内哲也，赤﨑勇
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 量子殻構造LEDのp型殻用電極に関する検討2019
- Author(s)
  鈴木敦志, 村上ヒデキ, 軒村恭平,竹林穣,後藤七美, 寺澤美月, Weifang Lu,曽根直樹, 飯田一喜,大矢昌輝, 上山智, 竹内哲也, 岩谷素顕, 赤﨑勇
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Improved Uniform Current Injection into Core-shell Type GaInN Nanowire LEDs by Optimizing Growth Condition and Indium-Tin-Oxide Deposition2019
- Author(s)
  N. Sone, A. Suzuki, H. Murakami, K. Nokimura, Minoru Takebayashi, Nanami Goto, Mizuki Terazawa, W. Lu, K. Iida, M. Ohya, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaNナノワイヤとGaInN/GaN多重量子殻のMOVPE成長と構造評価2019
- Author(s)
  後藤七美、曽根直樹、飯田一喜、W. Lu、村上ヒデキ、寺澤美月、埋橋淳, 関口隆史, 大久保忠勝, J. Chen, W. Yi, 宝野和博、大矢昌輝、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 様々なAlNテンプレート上に形成した緩和AlGaN層に作製したUV-Bレーザ2019
- Author(s)
  手良村昌平，川瀬雄太, 池田隼也，櫻木勇介，安江信次, 田中隼也，荻野雄矢，岩谷素顕, 竹内哲也, 上山智, 岩山章, 赤﨑勇, 三宅秀人
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Optical characterization of fluorescent SiC with high boron and nitrogen concentrations2019
- Author(s)
  D. Tanaka, W. Lu, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Luminescent properties of coaxial InGaN/GaN multi-quantum shell with AlGaN undershell grown on GaN nanowire2019
- Author(s)
  W. Lu, N. Goto, N. Sone K. Iida, A. Suzuki, H. Murakami, M. Terazawa, K. Nokimura, M. Tekebayashi, M. Ohya, M. Iwaya, T. Tekeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  E-MRS 2019 Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs2019
- Author(s)
  N. Goto, N. Sone, K. Iida, W. Lu, A. Suzuki, H. Murkami, M. Terazawa, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  The 19th International Conference on Crystal Growth and Eptaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 高効率緑色LEDのための二重金属Ag/Auナノ粒子による表面プラズモン共鳴波長の制御2019
- Author(s)
  真野稜也，ハン・ドンピョ,石本聖治,山本賢吾,上山智, 竹内哲也,岩谷素顕,赤﨑勇
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Fabrication and Characterization of Multi-Quantum-Shell light emitting diodes with Tunnel Junction2019
- Author(s)
  H. Murakami, A. Suzuki, K. Nokimura, M. Takebayashi, N. Goto, M. Terazawa, W. Lu, N. Sone, K. Iida, M. Ohya, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 高反射率AlInN/GaN多層膜反射鏡のためのその場観察反り測定2019
- Author(s)
  平岩恵，村永亘，岩山章，竹内哲也，上山智，岩谷素顕，赤﨑勇
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Growth of GaN nanowire and GaInN/GaN multi-quantum shell (MQS) grown by metal-organic vapor phase epitaxy2018
- Author(s)
  Naoki Sone, Nanami Goto, Mizuki Terazawa, Hideki Murakami, Kyohei Nokimura, Minoru Takebayashi,, Atsushi Suzuki, Kazuyoshi Iida, Masaki Ohya, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] AlN molar fraction dependence of TMAH wet etching on AlGaN2018
- Author(s)
  Shinji Yasue, Kosuke Sato, Yuta Kawase, Junya Ikeda, Yusuke Sakuragi, Sho Iwayama, Motoaki Iwaya,, Satoshi Kamiyama, Tetsuya Takeuchi, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] A 1.8mW GaN-based VCSEL with an n-type conducting bottom DBR2018
- Author(s)
  Wataru Muranaga,youta Fuwa, Takanobu Akagi, Sho Iwayama, Shotaro Yoshida,Yasuto Akatsuka, Junichiro Ogimoto, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaN-based VCSELs: Their Progress and Prospects2018
- Author(s)
  Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  23rd Microoptics Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 深紫外LED発光特性の基板オフ角・方向依存性2018
- Author(s)
  小島久範、小笠原多久満、金明姫、飯田一善、小出典克、竹内哲也、岩谷素顕、上山智、赤崎勇
- Organizer
  第79回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Realization of high photosensitivity AlGaN-based photosensors2018
- Author(s)
  Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Akira Yoshikawa
- Organizer
  International workshop on nitride semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Realization of high performance AlGaN-based UV emitters and detectors2018
- Author(s)
  Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  International Ceramic Congress,
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] AlGaN/アニール処理スパッタAlNテンプレート上に作製した紫外レーザ2018
- Author(s)
  川瀬雄太、池田隼也、櫻木勇介、安江信次、岩山章、金明姫、岩谷素顕、竹内哲也、上山智、赤﨑勇、三宅秀人
- Organizer
  第79回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Optical and structural characterization of GaInN/GaN multiple quantum wells grown on nonpolar a-plane GaN templates by MOVPE2018
- Author(s)
  Shunya Otsuki, Daiki Jinno, Hisayoshi Daicho, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] AlGaN系材料に対するTMAHウェットエッチングのAlNモル分率依存性2018
- Author(s)
  安江信次、佐藤恒輔、川瀬雄太、池田隼也、櫻木勇介、岩山章、岩谷素顕、上山智、竹内哲也、赤崎勇
- Organizer
  第79回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] n-GaN電流拡散層を用いたGaInN系量子殻LEDの光学シミュレーション2018
- Author(s)
  寺澤美月、大矢昌輝、飯田一喜、曽根直樹、鈴木敦志、軒村恭平、竹林穣、後藤七美、村上ヒデキ、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第79回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors2018
- Author(s)
  Megumi Sakata, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Kamiyama
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 量子殻構造を有する LED のデバイス特性評価2018
- Author(s)
  村上ヒデキ、鈴木敦志、軒村恭平、竹林穣、後藤七美、寺澤美月、曽根直樹、飯田一喜、大矢昌輝、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第79回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] UV laser fabricated on relaxed AlGaN high temperature annealed and sputtered AlN Sapphire templates2018
- Author(s)
  Yuta Kawase, Junya Ikeda, Yusuke Sakuragi, shinji Yasue, Sho Iwayama, Myunghee Kim, Motoaki Iwaya,, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hideto Miyake
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] MOVPE-grown GaN-based tunnel junction and its application2018
- Author(s)
  T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  SPIE Photonics West OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Reduction of threading dislocation density in AlInN/GaN DBRs for GaN-based vertical-cavity surface-emitting lasers2018
- Author(s)
  Takanobu Akagi, Yugo Kozuka, Kazuki Ikeyama, Sho Iwayama, Masaru Kuramoto, Tatsuma Saito, Tetsuya, Takeuchi, Satoshi Kamiyama, Motoki Iwaya, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Crystal growth of high quality AlGaN for UV lasers2018
- Author(s)
  Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  The 6th Japan-China Symposium on Crystal Growth and Crystal Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaInN VCSELs with semiconductor-based DBRs2018
- Author(s)
  Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  SPIE photonics Europe
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Realization of High Performance UV Emitters and detectors by using AlGaN Materials2018
- Author(s)
  Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  International Conference on Nanomaterials and Nanotechnology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Study on GaInN/GaN multi-quantum shells for high-performance optoelectronic devices2018
- Author(s)
  S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  SPIE Photonics West 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Growth of GaInN yellow-green LEDs2018
- Author(s)
  Junya Yoshinaga, Tatsuya Ichikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International Conference on MOVPE-XIX
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Growth mechanism of GaInN/GaN multi-quantum shells and GaN nanowire structure grown by metalorganic vapor phase epitaxy2018
- Author(s)
  Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
- Organizer
  The 19th World Congress on Materials Science and Engineering
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018
- Author(s)
  山口修平，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，山田智也，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Observation of crystal growth of group III nitride semiconductors by using in situ X-ray diffraction attached metalorganic vapor phase epitaxial equipment2018
- Author(s)
  Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International Conference on MOVPE-XIX
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] AlGaN-based electron beam excitation UV lasers using AlGaN well layer2018
- Author(s)
  Yusuke Sakuragi, Yuta Kawase, Jyunya Ikeda, Shinji Yasue, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama,, Tetsuya Takeuchi, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] MOVPE　growth of thick and smooth surface GaInN on semipolar (1011) and (1011) GaN substrate and it sapplication of solar cell2018
- Author(s)
  Noboru Muramatsu, Toru Takanishi, Syun Mitsufujji, Kazuya Takahashi, Motoaki Iwayaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International Conference on MOVPE-XIX
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Effects of underlying layers on electrical properties of p-(Al)GaN/p-AlGaN superlattices2018
- Author(s)
  Kosuke Sato,Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 緑色LEDにおける表面プラズモン効果のためのp-GaN層の最適化2018
- Author(s)
  山本賢吾、ハンドンピョ、石本聖治、真野稜也、上山智、竹内哲也、岩谷素顕、赤崎勇
- Organizer
  第79回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Study on emission wavelength control of GaInN multi-quantum-shell / GaN nanowire2018
- Author(s)
  Nanami Goto, Kohei Sasai, Kazuyoshi Iida, Naoki Sone, Atushi Suzuki, Kyohei Nokimura, Minoru Takebayashi, Satoshi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  International Conference on MOVPE-XIX
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Electrically-injected GaN-based VCSELs2018
- Author(s)
  Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  Compound Semiconductor Week
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Substrate off-angle and direction dependences on DUV-LED characteristics2018
- Author(s)
  Hisanori Kojima, Takuma Ogasawara, Myunghee Kim, Yoshiki Saito, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Optical simulation of GaInN-based Multi-Quantum-Shell (MQS) LED using n-GaN current diffusing layer2018
- Author(s)
  Mizuki Terazawa, Masaki Ohya, Kazuyoshi Iida, Naoki Sone, Atsushi Suzuki, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaInN系面発光レーザーの開発と展望2018
- Author(s)
  竹内哲也、上山　智、岩谷素顕、赤﨑　勇
- Organizer
  レーザー学会学術講演会第38回年次大会
- Invited
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Growth and characterization of GaInN/GaN multi-quantum shell (MQS) /GaN nanowire2018
- Author(s)
  Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
- Organizer
  World Congress on Nano Science and Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaInN/GaN multi-quantum shells for high-performance optoelectronic devices2018
- Author(s)
  S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  SPIE Photonics West OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Determination of Internal Quantum Efficiency in Light-emitting Diode under Electrical Injection: IQE Degradation Mechanism Analysis2018
- Author(s)
  Dong-Pyo Han, Kengo Yamamoto, Seiji Ishimoto, Ryoya Mano, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018
- Author(s)
  小野寺卓也，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，久志本真希，鄭惠貞，本田善央，天野浩，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Blue edge-emitting laser diodes with AlInN/AlGaN multiple cladding layers2018
- Author(s)
  Kei Arakawa, Kohei Miyoshi, Tetsuya Takeuchi, Makoto Miyoshi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] EB excitation of UV lasers using the GaN/AlGaN MQW active layers2018
- Author(s)
  Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
- Organizer
  EMN meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 電子線励起による GaN/AlGaN 系レーザー2018
- Author(s)
  岩谷素顕、岩山章、竹内哲也、上山智、赤﨑勇、松本貴裕
- Organizer
  レーザー学会学術講演会第38回年次大会
- Invited
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Optimization of ITO deposition condition for surface plasmon enhanced green LED2018
- Author(s)
  Kengo Yamamoto, Dong-Pyo Han, Seiji Ishimoto, Ryoya Mano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Influence of trap level on Al0.6Ga0.4N/Al0.5Ga0.5N-MSM UV photodetector2018
- Author(s)
  Akira Yoshikawa, Saki Ushida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Modification of underlying layers to improve quantum efficiency in green light emitting diodes2018
- Author(s)
  Seiji Ishimoto, Dong-Pyo Han, Kengo Yamamoto, Ryoya Mano, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 下地GaN/GaInN超格子による緑色LEDの発光特性の変化2018
- Author(s)
  石本聖治、Han Dong-Pyo、山本賢吾、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第79回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaN-based vertical-cavity surface-emitting lasers with MOVPE-grown AlInN/GaN DBRs2018
- Author(s)
  Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  International Conference on MOVPE-XIX
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Fabrication of GaN-based multi-quantum shell LED2018
- Author(s)
  Kyohei Nokimura, Naoki Sone, Atsushi Suzuki, Kazuyoshi Iida, Minoru Takebayashi, Satoshi Kamiyama,, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  International workshop on nitride semiconductors
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 高効率GaN面発光レーザの現状と展望2017
- Author(s)
  竹内哲也・上山　智・岩谷素顕・赤﨑　勇
- Organizer
  電子情報通信学会　総合大会
- Place of Presentation
  名城大学
- Year and Date
  2017-03-22
- Invited
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Modified Shockley diode equation suitable for InGaN-based light-emitting diodes2017
- Author(s)
  Dong-Pyo Han, Jong-In Shim, Dong-Soo Shin, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] X線マイクロビームを用いた窒化物系単一ナノワイヤ上Ga1-xInxN/GaN量子井戸の構造評価2017
- Author(s)
  清木良麻、澁谷弘樹、今井康彦、隅谷和嗣、木村滋、岩瀬航平、宮嶋孝夫、上山智、今井大地、竹内哲也、岩谷素顕、赤崎勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Nitride-based nanowire and multi-quantum shell active layer for advanced photonic devices2017
- Author(s)
  S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  The 3rd Congress on Materials Science and Engineering
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Semipolar (10-1-1) GaInN/GaN p-i-n lightemitting2017
- Author(s)
  N. Muramatsu, T. Takanishi, S. Mitsufuji, M. Iwaya, T. Takeuchi, S.Kamiyama, and I. Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSELs with AlInN/GaN DBRs2017
- Author(s)
  Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  SPIE Photonics west
- Place of Presentation
  San Fransisco
- Year and Date
  2017-01-29
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Nitride-based nanowire and multi-quantum shell active layer for advanced photonic devices2017
- Author(s)
  S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  The 3rd Congress on Materials Science and Engineering
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaNナノワイヤ結晶の限定領域形成に関する基礎検討2017
- Author(s)
  竹林穣、栗崎勇気、澁谷弘樹、M. Kim、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaN-based VCSELs towards high efficiency2017
- Author(s)
  T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  OPIC 2017 LDC’17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] High-performance GaN-based VCSELs2017
- Author(s)
  T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  2017 IEEE Photonics Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSELs with lateral optical confinement structures2017
- Author(s)
  N. Hayashi, K. Matsui, T. Furuta, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  ISPlasma 2017
- Place of Presentation
  Chubu University, Japan
- Year and Date
  2017-02-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 紫外発光素子に向けたp層側光吸収低減の検討2017
- Author(s)
  安田俊輝、桑原奈津子、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017
- Author(s)
  T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
- Organizer
  紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Structural analysis of GaInN/GaN multiquantum wells grown on a GaN {1-100} sidewall of nanowire by using an x-ray micro beam2017
- Author(s)
  R. Seiki, H. Shibuya, Y. Imai, K.Sumitani, S. Kimura, K. Iwase, T. Miyajima, S. Kamiyama, D. Imai, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] r面サファイア基板上スパッタリング成膜AlNバッファ層の結晶品質と熱処理効果2017
- Author(s)
  大槻隼也、神野大樹、大長久芳、上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Modified Shockley diode equation suitable for InGaN-based light-emitting diodes2017
- Author(s)
  D.-P. Han, J.-I. Shim, D.-S. Shin, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Fabrication of GaInN/GaInP/GaAs/Ge 4-junction solar cell using wafer bonding technology2017
- Author(s)
  Kazuya Takahashi Ryoji Shinoda Syun Mitsufuji Motoaki Iwaya Tetsuya Takeuchi Satoshi Kamiyama Tomokazu Hattori Isamu Akasaki, Hiroshi Amano
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaInN vertical-cavity surface-emitting lasers with AlInN/GaN DBRs2017
- Author(s)
  Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  The 12th international conference on nitride semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] AlN系窒化物半導体のウェハ接合技術の検討2017
- Author(s)
  高橋一矢、篠田涼二、岩谷素顕、竹内哲也、上山智、服部友一、赤崎勇、片山竜二、上向井正裕
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Study on growth condition of 3D nanowire/GaInN-based multi-quantum shell active layer2017
- Author(s)
  K. Nokimura, M. H. Kim, A. suzuki, Y. Kurisaki, M. Takebayashi, H. Shibuya, K. Sasai. S. Kamiyama, T. Takeuchi, M. Iwaya, and I. Akasaki
- Organizer
  Materials Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaNナノワイヤ結晶の限定領域形成に関する基礎検討2017
- Author(s)
  林菜摘、松井健城、古田貴士、赤木孝信、竹内哲也、上山智、岩谷素顕、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 名城大学におけるGaInN系面発光レーザの現状とその展望2017
- Author(s)
  竹内哲也、上山　智、岩谷素顕、赤﨑　勇
- Organizer
  光電相互変換第125委員会　第236回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN/GaN tunnel junctions grown by MOVPE2017
- Author(s)
  Ryota Fuwa, Daiki Takasuka, Yasuto Akatsuka, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  LEDIA'17
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] 横方向光閉じ込め構造を有するGaN系面発光レーザ2017
- Author(s)
  林菜摘，松井健城，古田貴士，赤木孝信，竹内哲也，上山智，岩谷素顕，赤﨑勇
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] r面サファイア基板上スパッタリング成膜AlNバッファ層の結晶品質と熱処理効果2017
- Author(s)
  大槻隼也, 神野大樹, 大長久芳, 上山智, 竹内哲也, 岩谷素顕, 赤﨑勇
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Demonstration of AlGaN/GaN UV lasers by electron beam pumping2017
- Author(s)
  Motoaki Iwaya,　Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Mallorca, Spain
- Year and Date
  2017-03-05
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSELs towards high efficiency2017
- Author(s)
  T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Laser Disply Conference 2017
- Place of Presentation
  Yokohama
- Year and Date
  2017-04-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Structure of porous SiC by voltage controlled anodic oxidation method2017
- Author(s)
  H. Kurokawa, S. Kamiyama, I. Akasaki, T. Takeuchi, M. Iwaya, Y. Iwasa
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] アニール処理したスパッタ AlN膜上に形成したAlGaNの特性2017
- Author(s)
  袴田淳哉、川瀬雄太、岩山章、岩谷素顕、上山智、竹内哲也、赤﨑勇、三宅秀人
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaInN/GaN Multi-Quantum-Shell (MQS) on GaN Nanowire for 3D Light-Emitting Diode2017
- Author(s)
  M. H. Kim, K. Nokimura, S. Kamiyama, T. Takeuchi, M. Iwaya, and I. Akasaki
- Organizer
  European Materials Research Society Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 紫外発光素子に向けたp層側光吸収低減の検討2017
- Author(s)
  安田俊輝、桑原奈津子、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaNナノワイヤを用いた高出力LED作製に向けた検討2017
- Author(s)
  軒村恭平、栗崎湧気、上山智、竹内哲也、岩谷素顕、赤崎勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Feasibility study on limited area formation of GaN nanowires for multi-quantum shell LDs2017
- Author(s)
  Minoru Takebayashi, Yuki Kurisaki, Hiroki Shibuya, Myunghee Kim, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, Isamu Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] AlGaN系紫外レーザの現状と期待2017
- Author(s)
  岩谷　素顕, Ling Dong , 岩山　章，川瀬雄太，竹内　哲也, 上山　智, 赤﨑　勇，三宅秀人
- Organizer
  第46回日本結晶成長学会国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Feasibility study on limited area formation of GaN nanowires for multi-quantum shell LDs2017
- Author(s)
  M. Takebayashi, Y. Kurisaki, H. Shibuya, M. Kim, S. Kamiyama, T. Takeuchi, M. Iwaya, Isamu Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaN/GaN tunnel junctions grown by MOVPE2017
- Author(s)
  R. Fuwa, D. Takasuka, Y. Akatsuka, T. Takeuchi, M. Iwaya, S. Kamiyama,and I. Akasaki
- Organizer
  The 5th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Formation and characterization of porous SiC by anodic oxidation using potassium persulfate solution2017
- Author(s)
  Y. Iwasa, S. Kamiyama, M. Iwaya, T. Takeuchi, I. Akasaki
- Organizer
  SPIE NanoPhotonics
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017
- Author(s)
  小野寺卓也，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017
- Author(s)
  山口修平，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，山田智也，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Demonstration of AlGaN/GaN-based UV lasers excited by electron beam2017
- Author(s)
  Motoaki Iwaya,　Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
- Organizer
  SPIE Photonics west
- Place of Presentation
  San Fransisco, USA
- Year and Date
  2017-01-29
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] X 線マイクロビームを用いた窒化物系単一ナノワイヤ上 Ga1-xInxN/GaN 量子井戸の構造評価2017
- Author(s)
  清木良麻，澁谷弘樹，今井康彦，隅谷和嗣，木村滋，岩瀬航平，宮嶋孝夫，上山智，今井大地，竹内哲也，岩谷素顕，赤崎勇
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 高効率窒化物半導体発光素子に向けた新展開2017
- Author(s)
  竹内哲也、上山　智、岩谷素顕、赤﨑　勇
- Organizer
  ワイドギャップ半導体光・電子デバイス第162委員会　第104回合同研究会
- Invited
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSELs with lateral optical confinement structures2017
- Author(s)
  N. Hayashi, K. Matsui, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Low-temperature embedded growth over III-nitride nanowires2017
- Author(s)
  H. Shibuya, Y. Kurisaki,S. Kamiyama, M. Iwaya, T. Takeuchi and I. Akasaki
- Organizer
  ISPlasma 2017
- Place of Presentation
  Nagoya
- Year and Date
  2017-03-01
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaN-based VCSELs Towards High Efficiency2017
- Author(s)
  T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  The 5th International Conference on Light-Emitting Devices and Their Industrial Applications
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Demonstration of electron beam pumped GaN-based laser2017
- Author(s)
  T. Hayashi, N. Nagata, T. Senga, S. Iwayama, M. Iwaya, T.Takeuchi, S.Kamiyama, I. Akasaki, and T. Matsumoto
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Fabrication and characterization of AlGaN templates on annealed sputtering AlN layer2017
- Author(s)
  J. Hakamata, Y. Kawase, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] スパッタ法AlN膜の高温アニールとHVPE法によるホモエピ成長・口頭2017
- Author(s)
  劉怡康、三宅秀人、平松和政、岩谷素顕、赤崎勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Electron beam excitation of ultraviolet laser using a GaN/AlGaN multi quantum well active layer2017
- Author(s)
  Takafumi Hayashi, Lin Dong, Yuta Kawase, Noriaki Nagata, Takashi Senga, Sho Iwayama, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
- Organizer
  The 8th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 横方向光閉じ込め構造を有するGaN系面発光レーザ2017
- Author(s)
  林菜摘、松井健城、古田貴士、赤木孝信、竹内哲也、上山智、岩谷素顕、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 蛍光SiCの発光特性評価2017
- Author(s)
  上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第370回蛍光体同学会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Alternative hole injections in nitride-based light-emitting devices2017
- Author(s)
  T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  2017 MRS Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSELs with lateral optical confinement structures2017
- Author(s)
  N. Hayashi, K. Matsui, T. Furuta, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  ISPlasma 2017
- Place of Presentation
  Nagoya, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] AlN epitaxial growth with Ga supply on off-cut sapphire substrate2017
- Author(s)
  Takuma Ogasawara, Toshiki Yasuda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  LEDIA'17
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017
- Author(s)
  T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] GaInN vertical-cavity surface-emitting lasers with AlInN/GaN DBRs2017
- Author(s)
  T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 電子線励起法によるGaN/AlGaN-MQW レーザ2017
- Author(s)
  林貴文、永田訓章、千賀崇史、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017
- Author(s)
  S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 横方向光閉じ込め構造を有するGaN系面発光レーザ2017
- Author(s)
  林菜摘，松井健城，古田貴士，赤木孝信，竹内哲也，上山智，岩谷素顕，赤﨑勇
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaN-based VCSELs with lateral optical confinement structures2017
- Author(s)
  N. Hayashi , K. Matsui , T. Takeuchi , S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 窒化物半導体における新しい導電性制御：トンネル接合と分極ドーピング2017
- Author(s)
  竹内哲也、岩谷素顕、上山　智、赤﨑　勇
- Organizer
  第36回電子材料シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Acceleration Voltage Dependence of Threshold Power Density in AlGaN/GaN Based Electron2017
- Author(s)
  Motoaki Iwaya, Takafumi Hayash, Noriaki Nagata,Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Takahiro Matsumoto
- Organizer
  11th International Symposium on
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Optical characteristics of plasmonic LEDs with and without dielectic films2017
- Author(s)
  S. Matsuo, J. Ohsumi, K. Niwa, S. Kamiyama, T. Takeuchi, M. Iwaya and I. Akasaki
- Organizer
  SPIE Photonics West 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Realization of electron beam excitation of UV laser using a AlGaN/GaN multi quantum well active layer2017
- Author(s)
  Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
- Organizer
  European Material Research Scociety Symposium Fall meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] High electron concentrations in MOCVD-grown Si-doped dilute AlxGa1-xN on sapphire2017
- Author(s)
  B. Monemar, P. P. Paskov, J. P. Bergman, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama and I. Akasaki
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 紫外発光素子に向けたp層側光吸収低減の検討2017
- Author(s)
  安田俊輝、桑原奈津子、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] GaNナノワイヤを用いた高出力LED作製に向けた検討2017
- Author(s)
  軒村恭平, 栗崎湧気, 上山智, 竹内哲也, 岩谷素顕, 赤崎勇
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Fabrication of high-quality AlN template by high-temperature annealing for deepultraviolet2017
- Author(s)
  Motoaki Iwaya, Takafumi Hayashi, Noriaki Nagata, Takashi Senga, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Takahiro Matsumoto
- Organizer
  International Workshop on UV Materials and Devices 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaInN トンネル接合と n 型 GaNSb による低温 p 側構造の作製2016
- Author(s)
  鈴木健太、財部覚、高須賀大貴、小出典克、竹内哲也、岩谷素顕、上山智、赤﨑勇
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Observation of AlGaN/GaN heterostructure by in situ XRD attached metalorganic vapor phase epitaxial equipment2016
- Author(s)
  J. Osumi, R. Kanayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki,
- Organizer
  18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya/Japan
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Polarization induced hole accumulations in nitride semiconductor heterostructures2016
- Author(s)
  T. Yasuda, S. Yoshida, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  LEDIA’16
- Place of Presentation
  Yokohama, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] ITO/Ga2O3 multilayer electrodes towards deep UV-LEDs2016
- Author(s)
  N. Kuwabara, T. Yasuda, S. Katsuno, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  LEDIA’16
- Place of Presentation
  Yokohama, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Determination of the Site of Sb Occupation in MOCVD-Grown GaN1xSbx Using X-Ray Absorption Fine-Structure Measurements2016
- Author(s)
  Takao Miyajima, Daisuke Komori, Toshiaki Ina, Ryoma Seiki, Kiyofumi Nitta, Tetsuya Takeuchi, Tomoya Uruga, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki,
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] アニール処理AlN下地層上AlGaN/AlN-MQWの光学特性2016
- Author(s)
  袴田淳哉、草深敏匡、千賀崇史、岩谷素顕、竹内哲也、上山智、三宅秀人、赤崎勇
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京/日本
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] X線吸収微細構造測定によるAl0.82In0.18Nの局所構造解析2016
- Author(s)
  清木良麻、小森大資、池山和希、伊奈稔哲、小沼猛儀、宮嶋孝夫、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 3-mW RT-CW GaN-Based VCSELs and Their Temperature Dependence2016
- Author(s)
  Kenjo Matsui, Takashi Furuta, Natsumi Hayashi, Yugo Kozuka, Takanobu Akagi, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki,
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] High Temperature Annealing of Sputtered AlN Buffer Layer on r-Plane Sapphire Substrate and its Effect on Crystalline Quality of a-Plane GaN2016
- Author(s)
  Daiki Jinno, Shun Otsuki, Teruyuki Niimi, Hisayoshi Daicho, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 低温下におけるⅢ族窒化物ナノワイヤの埋め込み成長に関する研究2016
- Author(s)
  澁谷弘樹、上山智、岩谷素顕、竹内哲也、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] アニール処理AlN下地層上AlGaN/AlN-MQWの光学特性2016
- Author(s)
  袴田淳哉、草深敏匡、千賀崇史、岩谷素顕、竹内哲也、上山智、三宅秀人、赤崎勇
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京/日本
- Year and Date
  2016-03-23
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Low Temperature Photoluminescence in Highly Si-Doped AlxGa1-xN with x < 0.092016
- Author(s)
  Bo Monemar, Plamen P. Paskov, K. Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 3-mW RT-CW GaN-based VCSELs and their temperature dependence2016
- Author(s)
  K. Matsui, T. Furuta, N. Hayashi, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  International Workshop on Nitride semiconductors 2016
- Place of Presentation
  Orlando, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] サファイア基板上AlNエピタキシャル層へのGa添加の効果2016
- Author(s)
  小笠原多久満、安田俊輝、竹内哲也、岩谷素顕、上山智、赤﨑勇
- Organizer
  2016結晶工学未来塾
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Characterization of AlGaN/GaN Heterostructure by In Situ X-Ray Diffraction Attached Metal Organic Vapor Phase Epitaxy2016
- Author(s)
  Ryousuke Kanayama, Junya Osumi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Local Structural Analysis around In Atoms in Al0.82In0.18N alloy by Using X-Ray Absorption Fine-Structure Measurements2016
- Author(s)
  Ryoma Seiki, Daisuke Komori, Kazuki Ikeyama, Toshiaki Ina, Takeyoshi Onuma, Takao Miyajima, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Theoretical Investigation of Nitride Nanowire-Based QuantumShell Lasers2016
- Author(s)
  Yuki Kurisaki, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Si3N4による高AlNモル分率n-AlGaN用V系電極の低接触比抵抗化2016
- Author(s)
  永田訓章、森一喜、武田邦宏、草深敏匡、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京/日本
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlGaN多重量子井戸構造のレーザ発振特性のSi濃度依存性2016
- Author(s)
  千賀崇史、永田訓章、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京/日本
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] ITO/Ga2O3 Multilayer Electrodes Towards Deep UV-LEDs2016
- Author(s)
  N. Kuwabara, T. Yasuda, S. Katsuno, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki,
- Organizer
  The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2016-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSELs using Periodic Gain Structures2016
- Author(s)
  K. Matsui, K. Ikeyama, T. Furuta, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2016-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Physical Property of the High Photosensitive Field Effect Transistor Type UV Photosensors with AlGaN/AlGaN Hetero Structure2016
- Author(s)
  Akira Yoshikawa, Saki Ushida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] AlGaN多重量子井戸構造のレーザ発振特性のSi濃度依存性2016
- Author(s)
  千賀崇史、永田訓章、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京/日本
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Room temperature CW operation of GaN-based VCSELs2016
- Author(s)
  K. Matsui, T. Furuta, N. Hayashi, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  IEEE 2016 Lester Eastman Conference
- Place of Presentation
  Bethlehem, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Low Resistivity Ohmic Contact V-Based Electrode Contributed by Using Thin SiNx Intermediate Layer for High AlN Molar Fraction n-Type AlGaN2016
- Author(s)
  Noriaki Nagata, Takashi Senga, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Temperature Dependence in AlGaN-Based Heterostructure Field-Effect Transistor Type UV Photosensors2016
- Author(s)
  Saki Ushida, Akira Yoshikawa, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Design and Fabrication of Modulation-Doped GaN-Based Vertical Cavities for Blue Surface-Emitting Lasers 2016
- Author(s)
  J. Ogimoto, Y. Kozuka, T. Akagi, N. Hayashi, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  International Workshop on Nitride semiconductors 2016
- Place of Presentation
  Orlando, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Polarization Induced Hole Accumulations in Nitride Semiconductor Heterostructures2016
- Author(s)
  T. Yasuda, S. Yoshida, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2016-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSELs using Periodic Gain Structures2016
- Author(s)
  K. Matsui , K. Ikeyama , T. Furuta , Y. Kozuka , T. Akagi , T. Takeuchi , S. Kamiyama , M. Iwaya , and I. Akasaki
- Organizer
  LEDIA’16
- Place of Presentation
  Yokohama, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] X線その場観察MOVPEによるAlGaN/GaNヘテロ構造評価2016
- Author(s)
  金山亮介、大角純也、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Polarization induced holes for ultraviolet emitting devices2016
- Author(s)
  T. Yasuda, S. Yoshida, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  IEEE 2016 Lester Eastman Conference
- Place of Presentation
  Bethlehem, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] 分極電荷による高ホール濃度を有するp型AlGaNの作製2016
- Author(s)
  安田俊輝、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 1.7-mW nitride-based vertical-cavity surface-emitting lasers using AlInN/GaN bottom DBRs2016
- Author(s)
  T. Furuta, K. Matsui, Y. Kozuka, S. Yoshida, N. Hayasi, T. Akagi, N. Koide, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  The 25th International Semiconductor Laser Conference (ISLC2016)
- Place of Presentation
  Kobe, Japan
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] XAFS法を用いたGaN1-xSbx混晶半導体中のSb占有位置評価2016
- Author(s)
  宮嶋孝夫、小森大資、清木良麻、伊奈稔哲、新田清文、鈴木健太、竹内哲也、宇留賀朋哉、上山智、岩谷素顕、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Group-III nitride-based nanostructures for novel optoelectronic devices2016
- Author(s)
  S. Kamiyama, M. Iwaya, T. Takeuchi, I Akasaki
- Organizer
  Nano Science & Technology 2016
- Place of Presentation
  Singapore
- Year and Date
  2016-10-26
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] 窒化物系ナノワイヤーおよび量子殻構造の作製と、光デバイス応用2016
- Author(s)
  上山智、竹内哲也、岩谷素顕、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSEL using a periodic gain structure consisting of two GaInN 5QWs2016
- Author(s)
  K. Matsui, T. Furuta, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya and I. Akasaki
- Organizer
  第35回電子材料シンポジウム
- Place of Presentation
  滋賀
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Nitride-based tunnel junctions with graded GaInN layers2016
- Author(s)
  D. Takasuka, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama and I. Akasaki
- Organizer
  ISPlasma/IC-PLANTS 2016
- Place of Presentation
  Nagoya
- Year and Date
  2016-03-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] High hole accumulation and low p-contact resistande with graded-AlGaN layers2016
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  Nagoya/Japan
- Year and Date
  2016-03-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] High hole accumulation and low p-contact resistande with graded-AlGaN layers2016
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  Nagoya/Japan
- Year and Date
  2016-03-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 電子線励起法によるGaInN/GaN-MQW レーザ2016
- Author(s)
  林貴文、永田訓章、千賀崇史、金山亮介、岩山章、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] MOVPE-grown GaN-based vertical cavity surface emitting lasers2016
- Author(s)
  K. Matsui, T. Furuta, N. Hayashi, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  EMN Meeting on Epitaxy
- Place of Presentation
  Budapest, Hungary
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Nano-size concavo-convex (NCC)サファイア基板を用いた高品質 AlN 膜成長2016
- Author(s)
  吉川陽、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Temperature Dependence of the Nitride-based HFET Structure Photosensors2016
- Author(s)
  S. Ushida, A. Yoshikawa, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2016-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 窒化物半導体 HFET 型光センサの動作に関する温度依存性2016
- Author(s)
  牛田彩希、吉川陽、岩谷素顕、上山智、竹内哲也、赤﨑勇
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Low resistiveGaInN tunneljunctionswith high Si concentrations2016
- Author(s)
  Y. Akatsuka, D. Takasuka, M. Ino, T. Akagi, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasak
- Organizer
  18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya/Japan
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 深紫外LEDのためのITO/Ga203 多層膜透明電極の検討2016
- Author(s)
  桑原奈津子, 安田俊輝, 勝野翔太, 小出典克, 竹内哲也, 岩谷素顕, 上山智, 赤﨑勇
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京/日本
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 高温アニール処理のスパッタ AlN 層における効果2016
- Author(s)
  袴田淳哉、岩谷素顕、上山智、竹内哲也、三宅秀人、赤﨑勇
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Growth and characterization of GaInN/GaN multi-quantum shell active layer for novel optoelectronic devices2016
- Author(s)
  S. Kamiyama, M. Iwaya, T. Takeuchi, I Akasaki
- Organizer
  Collaborative Conference on Crystal Growth
- Place of Presentation
  San Sebastian, Spain
- Year and Date
  2016-09-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06416
[Presentation] Hole accumulation to polarization charges in relaxed AlGaN heterostructures with high AlN mole fractions2016
- Author(s)
  T. Yasuda, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  International Workshop on Nitride semiconductors 2016
- Place of Presentation
  Orlando, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Low-Temperature Grown p-Side Structure with GaInN Tunnel Junction and n-GaNSb2016
- Author(s)
  281.K. Suzuki, K. Takarabe, D. Komori, D. Takasuka, N. Koide, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  The 4th International Conference on Light- Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2016-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Si3N4による高AlNモル分率n-AlGaN用V系電極の低接触比抵抗化2016
- Author(s)
  永田訓章、森一喜、武田邦宏、草深敏匤、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第63回応用物理学会秋季学術講演会
- Place of Presentation
  東京/日本
- Year and Date
  2016-03-23
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Improvement of p-type electrical property by polarization-doping in graded-AlGaN layer2016
- Author(s)
  安田俊輝、勝野翔太、桑原奈津子、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
- Organizer
  第35回電子材料シンポジウム
- Place of Presentation
  滋賀
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Improvement of p-type electrical property by polarization-doping in graded-AlGaN layer2016
- Author(s)
  Y. . Yasuda, S. Katsuno, N. Kuwabara, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki
- Organizer
  35th Electronic Materilas Symposium
- Place of Presentation
  Moriyama, Japan
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] AlGaN系HFET型光センサのSiNxパッシベーション効果2016
- Author(s)
  牛田彩希、吉川陽、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第７７回応用物理学会秋季講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaN-based VCSEL using a periodic gain structure consisting of two GaInN 5QWs2016
- Author(s)
  K. Matsui, T. Furuta, Y. Kozuka, T. Akagi, T. Takeuchi, S. Kamiyama, M. Iwaya and I. Akasaki
- Organizer
  35th Electronic Materilas Symposium
- Place of Presentation
  Moriyama, Japan
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaInN-based tunnel junctionsfor novel optoelectronic devices2016
- Author(s)
  T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  EMN Meeting on Photovoltaics
- Place of Presentation
  HongKong
- Year and Date
  2016-01-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Buried Tunnel Junctions Using Low Resistive GaInN Tunnel Junctions with High Si Concentrations2016
- Author(s)
  Yasuto Akatsuka, Daiki Takasuka, Takanobu Akagi, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Hole Accumulations to Polarization Charges in Relaxed AlGaN Heterostructures with High AlN Mole Fractions2016
- Author(s)
  Toshiki Yasuda, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Si concentration dependence of laser oscillation characteristics in AlGaN multiple quantum well active layer2016
- Author(s)
  T. Senga, N. Nagata, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya/Japan
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Buried tunnel junctions using low resistive GaInN tunnel junctions with high Si concentrations2016
- Author(s)
  Y. Akatsuka, D. Takasuka, T. Akagi, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  International Workshop on Nitride semiconductors 2016
- Place of Presentation
  Orlando, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] GaNSb alloys grown under H2carrier gases2015
- Author(s)
  Daisuke Komori, Kaku Takarabe, Kenta Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] サファイア上AlN テンプレートの表面平坦性の検討2015
- Author(s)
  勝野翔太, 萩原康大, 安田俊輝, 小出典克,岩谷素顕, 竹内哲也, 上山智, 赤﨑勇, 天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-14
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
- Author(s)
  S. Katsuno, T. Yasuda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Growth of high-quality AlN on sapphire using annealing technique2015
- Author(s)
  H. Miyake, S. Tamaki, D. Yasui, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
- Organizer
  9th International Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  韓国
- Year and Date
  2015-11-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Carrier Gas Dependence on GaNSb MOVPE Growth2015
- Author(s)
  D. Komori, H. Sasajima, K. Takarabe, K. Suzuki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] RF加熱式HVPE法を用いたAlN成長2015
- Author(s)
  安井, 三宅, 平松, 岩谷, 赤崎, 天野
- Organizer
  応用物理学会SC東海地区学術講演会2015
- Place of Presentation
  名古屋大学
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Correlation between crystal qualities and electrical properties in Si-doped AlGaN2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2015-05-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaNSb におけるGaSb モル分率のキャリアガス依存性2015
- Author(s)
  小森大資, 財部覚, 鈴木健太, 竹内哲也, 上山智, 岩谷素顕, 宮嶋孝夫, 小出典克,赤﨑勇
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-14
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Epitaxial Growth of AlN Templates with Smooth Surfaces on Sapphire2015
- Author(s)
  S. Katsuno, K. Hagiwara, T. Yasuda, N. Koide, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  2015 Material Research Society Fall Meeting
- Place of Presentation
  Boston/USA
- Year and Date
  2015-12-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Status and Prospects of GaN-Based Vertical Cavity Surface Emitting Lasers (VCSELs)2015
- Author(s)
  T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki:
- Organizer
  International Symposium on Optical Memory
- Place of Presentation
  Fukui, Japan
- Year and Date
  2015-10-05
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Growth of AlN layer on sputtered AlN template substrate by hydride vapor phase epitaxy2015
- Author(s)
  S. Tamaki, D. Yasui, H. Miyake, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
- Organizer
  APWS2015
- Place of Presentation
  ソウル韓国
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Electrical properties of extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction2015
- Author(s)
  Kunihiro Takeda, Kazuki Mori, Toshiki Kusafuka,Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  The 7th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Seoul/Korea
- Year and Date
  2015-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Optimization of growth condition of conductive AlGaN layer with high Al content2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  The 7th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Seoul/Korea
- Year and Date
  2015-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Correlation between Crystal Qualities and Electrical Properties in Si-Doped Al0.6Ga0.4N2015
- Author(s)
  T. Yasuda, S. Katsuno, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] AlN/Sapphire基板を用いたRF加熱式HVPEによるAlN成長2015
- Author(s)
  安井, 三宅, 平松, 岩谷, 赤崎, 天野
- Organizer
  電子情報通信学会技術研究報告ED2015-70
- Place of Presentation
  大阪市立大学
- Year and Date
  2015-11-26
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Nitride-Based Tunnel Junctions towards DeepUV-LEDs2015
- Author(s)
  D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2015-05-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Electrical Properties of High Carrier Concentration n-Type AlGaN2015
- Author(s)
  K. Takeda, K. Mori, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications' 15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 高Al組成のn-AlGaNにおけるV系電極のコンタクト特性2015
- Author(s)
  森一喜、武田邦宏、草深敏匡、岩谷素顕、上山智、竹内哲也、赤崎勇、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] サファイア上AlNテンプレートの表面平坦性の検討2015
- Author(s)
  勝野翔太, 萩原康大, 安田俊輝, 小出典克, 岩谷素顕, 竹内哲也, 上山智, 赤﨑勇, 天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋/日本
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
- Author(s)
  S. Katsuno, T. Yasuda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Low Ohmic contact resistance to high AlN molar fraction n-type AlGaN by V-based electrode2015
- Author(s)
  Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu/Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Electrical characteristics of externally high Si-doped AlGaN with low AlN molar fraction2015
- Author(s)
  Kunihiro Takeda, Motoaki Iwaya, Daisuke Iida, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu/Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Nitride-Based Tunnel Junctions towards Deep UV-LEDs2015
- Author(s)
  D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Organizer
  The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED2015
- Author(s)
  M. Iwaya, D. Iida, K. Takeda, T. Sugiyama, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  11th international coference of nitride semiconductor
- Place of Presentation
  Beijing/China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Contact Characteristics of V-Based Electrode for High AlN Molar Fraction n-AlGaN2015
- Author(s)
  K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Epitaxial Growth of AlN Templates with Smooth Surfaces on Sapphire2015
- Author(s)
  Syouta Katsuno, Koudai Hagiwara, Toshiki Yasuda, Norikatsu Koide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  MRS fall meeting 2015
- Place of Presentation
  Boston, USA
- Year and Date
  2015-11-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] 高キャリア濃度n型AlGaNの電気的特性2015
- Author(s)
  武田邦宏、森一喜、山田知明、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 深紫外LEDに向けた窒化物半導体トンネル接合の検討2015
- Author(s)
  髙須賀大貴,南川大智,井野匡貴,竹内哲也,岩谷素顕,上山智,天野浩,赤﨑勇
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  平塚
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Nitride-Based Buried Tunnel Junctions for Current Confinement in Blue VCSEL2015
- Author(s)
  Masataka Ino, Daiki Takasuka, Kohei Iwase, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Norikatsu Koide, Isamu Akasaki
- Organizer
  MRS fall meeting 2015
- Place of Presentation
  Boston, USA
- Year and Date
  2015-11-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED2015
- Author(s)
  M. Iwaya, D. Iida, K. Takeda, T. Sugiyama, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  11th international coference of nitride semiconductors
- Place of Presentation
  Beijing/China
- Year and Date
  2015-08-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Nitride-Based Tunnel Junctions towards Deep UV-LEDs2015
- Author(s)
  D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications' 15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlGaN-based UV-LEDs with polarization engineering2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  14th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya/japan
- Year and Date
  2015-11-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlGaN-based UV-LEDs with polarization engineering2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  14th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya/Japan
- Year and Date
  2015-11-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] GaInN系面発光レーザの室温パルス発振と今後の展望2015
- Author(s)
  竹内哲也、岩谷素顕、上山　智、赤崎　勇
- Organizer
  産業用LED応用研究会＆JPC紫外線研究会
- Place of Presentation
  東京
- Year and Date
  2015-06-25
- Invited
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] AlInN多層膜反射鏡を有する窒化物半導体面発光レーザのパルス発振2015
- Author(s)
  竹内哲也、岩谷素顕、上山　智、赤崎　勇
- Organizer
  第76回応用物理学会秋季学術講演会シンポジウム
- Place of Presentation
  名古屋
- Year and Date
  2015-09-14
- Invited
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] バナジウム系電極による高AlNモル分率n型AlGaNのとの低接触比抵抗の検討2015
- Author(s)
  森一喜、草深敏匡、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋/日本
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Electron and hole accumulations to polarization charges at GaN/AlInN/GaN interfaces2015
- Author(s)
  Shotaro Yoshida, Kazuki Ikeyama, Toshiki Yasuda, Takashi Furuta, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, and Isamu Akasaki,
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] 窒化物半導体面発光レーザの現状と照明応用に向けた将来展望2015
- Author(s)
  竹内哲也、岩谷素顕、上山　智、赤崎　勇
- Organizer
  第48回照明学会全国大会　固体光源分科会シンポジウム
- Place of Presentation
  福井
- Year and Date
  2015-08-27
- Invited
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
- Author(s)
  S. Katsuno, T. Yasude, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Contact Characteristics of V-Based Electrode for High AlN Molar Fraction n-AlGaN2015
- Author(s)
  K. Mori, K. Takeda, T. Kusafuka,M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2015-05-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Correlation between crystal qualities and electrical properties in Si-doped AlGaN2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] HVPE Growth of Thick AlN on AlN/Sapphire2015
- Author(s)
  H. Miyake, S. Tamaki, D. Yasui, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors
- Place of Presentation
  福岡
- Year and Date
  2015-08-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Electrical Properties of High Carrier Concentration n-Type AlGaN2015
- Author(s)
  K. Takeda, K. Mori, T. Kusafuka,M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications '15
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2015-05-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] Electrical characteristics of externally high Si-doped AlGaN with low AlN molar fraction2015
- Author(s)
  Kunihiro Takeda, Motoaki Iwaya, Daisuke Iida, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu/Japan
- Year and Date
  2015-11-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
- Author(s)
  S. Katsuno, T. Yasude, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] MOVPE Growth of AlNSb Alloys2015
- Author(s)
  K. Suzuki, D. Komori, H. Sasajima, K. Takarabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  The 3rd International Confenerce on Light-Emitting Devices and thier Induatrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Low Ohmic contact resistance to high AlN molar fraction n-type AlGaN by V-based electrode2015
- Author(s)
  Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu/Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02019
[Presentation] 深紫外LEDに向けた窒化物半導体トンネル接合の検討2015
- Author(s)
  高須賀大貴, 南川大智, 井野匡貴, 竹内哲也, 岩谷素顕, 上山智, 天野浩, 赤﨑勇
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlN growth on sputtering AlN template substrate by hydride vapor phase epitaxy2015
- Author(s)
  D. Yasui, S. Tamaki, H. Miyake, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
- Organizer
  The 3th International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  横浜
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Optimization of growth condition of conductive AlGaN layer with high Al content2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  The 7th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Seoul/Korea
- Year and Date
  2015-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Electrical properties of extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction2015
- Author(s)
  Kunihiro Takeda, Kazuki Mori, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  The 7th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Seoul/Korea
- Year and Date
  2015-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation]2014
- Author(s)
  T. Takeuchi, D. Minamikawa, Y. Kuwano, M. Watanabe, M. Iwaya, S. Kamiyama, I. Akasaki
- Organizer
  International conference on metamaterials and nanophysics 2014
- Place of Presentation
  Varadero, Cuba
- Invited
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation]2014
- Author(s)
  M. Ino, Y. Kuwano, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and its Ondustrial Application 2014
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Investigation of hole injection in UV-LEDs utilizing polarization effect2014
- Author(s)
  Toshiki Yasuda, Kento Hayashi, Tsubasa Nakashima, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
- Organizer
  LEDIA'14
- Place of Presentation
  yokohama/japan
- Year and Date
  2014-04-23
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] III族窒化物半導体埋め込みトンネル接合による電流狭窄構造2014
- Author(s)
  桑野侑香、堀川航佑、森田隆敏、井野匡貴、竹内哲也、上山智、岩谷素顕、赤﨑勇
- Organizer
  第61回春季応用物理学会学術講演会
- Place of Presentation
  青山学院大学、相模原
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] GaInN/GaNヘテロ接合における緩和過程の転位密度依存性2014
- Author(s)
  石原耕史，近藤保成，松原大幸，飯田大輔，山本泰司，曽和美保子，岩谷素顕，竹内哲也，上山智，赤﨑勇
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] High reflective and low resistive silver electrode on p-GaN2014
- Author(s)
  Shunsuke Kawai, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  ISPlasma
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] GaNSbのSb取り込みと表面形態に関する検討2014
- Author(s)
  小森大資, 笹島浩希, 鈴木智行, 竹内哲也, 上山智, 岩谷素顕, 赤崎勇
- Organizer
  電子情報通信学会2014　電子デバイス研究会（ED）
- Place of Presentation
  名古屋
- Year and Date
  2014-05-29
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] 窒化物半導体LEDにおける正孔伝導に対する分極電荷の影響2014
- Author(s)
  安田俊輝、勝野翔太、林健人、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation]2014
- Author(s)
  Y. Kuwano, M. Ino, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Ⅲ族窒化物半導体による電流狭窄構造へのトンネル接合の応用2014
- Author(s)
  井野匡貴，南川大智，水野尚之，竹内哲也，上山智，岩谷素顕，赤﨑勇
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation]2014
- Author(s)
  井野匡貴、森田隆敏、桑野侑香、渡邉雅大、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第61回春季応用物理学会学術講演会
- Place of Presentation
  相模原
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Current confinement by nitride-based tunnel junction2014
- Author(s)
  Y. Kuwano, M. Ino, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  ISplasma2014
- Place of Presentation
  名城大学、名古屋
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] 窒化物半導体HFET型UV光センサーの火炎センサー応用2014
- Author(s)
  山本雄磨, 村瀬卓弥, 石黒真未, 山田知明, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇
- Organizer
  第61回応用物理学会秋季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Improvement of the light extraction efficiency in 350-nm-emission UV light-emitting diodes by novel distributed bragg reflector p-type electrode2014
- Author(s)
  T. Nakashima, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  ISPlasma2014/IC-PLANTS2014
- Place of Presentation
  Meijo Univ., Nagoya
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
- Author(s)
  勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
- Organizer
  電子情報通信学会2014　電子デバイス研究会（ED）
- Place of Presentation
  名古屋
- Year and Date
  2014-05-29
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
- Author(s)
  勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
- Organizer
  電子情報通信学会2014 電子デバイス研究会(ED)
- Place of Presentation
  名古屋/日本
- Year and Date
  2014-05-29
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Observation of group III nitride semiconductors by in situ X-ray diffraction monitoring during MOVPE growth2014
- Author(s)
  Motoaki Iwaya, Taiji Yamamoto, Daisuke Iida, Mihoko Sowa, Yasunari Kondo, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  International Conference on Materials and Characterization Techniques
- Place of Presentation
  Vellore, India
- Invited
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] III族窒化物半導体トンネル接合上の高効率LED2014
- Author(s)
  井野　匡貴、森田隆敏、桑野侑香、渡邉雅大、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第61回春季応用物理学会学術講演会
- Place of Presentation
  青山学院大学、相模原
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation]2014
- Author(s)
  桑野侑香、堀川航佑、森田隆敏、井野匡貴、竹内哲也、岩谷素顕、上山智、赤崎勇
- Organizer
  第61回春季応用物理学会学術講演会
- Place of Presentation
  相模原
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] MOCVD法によるSbを添加したAiNおよびGaNの作製2014
- Author(s)
  笹島浩希, 小森大資, 竹内哲也, 岩谷素顕, 上山智, 赤崎勇
- Organizer
  電子情報通信学会2014　電子デバイス研究会（ED）
- Place of Presentation
  名古屋
- Year and Date
  2014-05-29
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Low Resistive and Low Absorptive Nitride-Based Tunnel junctions2014
- Author(s)
  Daichi Minamikawa, Daiki Takasuka, Masataka Ino, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  2014 MRS FALL MEETING ＆ EXHIBIT
- Place of Presentation
  Boston, USA
- Year and Date
  2014-12-02
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Realization of the high conversion efficiency solar cells using high InN molar fraction GaInN active layer2014
- Author(s)
  Motoaki Iwaya, Hironori Kurokawa, Yosuke Katsu, Taiji Yamamoto, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Organizer
  SPIE Photonics West 2014
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 高InNモル分率GaInNを用いたトンネル接合(2)2014
- Author(s)
  南川大智, 井野匡貴, 竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  札幌
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] MOCVDを用いたGaNSbの結晶成長2014
- Author(s)
  小森大資, 笹島浩希, 鈴木智行, 竹内哲也, 上山智, 岩谷素顕, 赤崎勇
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Band Enginnering Considering Negative and Positive polarization Charges in UV-LEDs2014
- Author(s)
  Toshiki Yasuda, Kento Hayashi, Syouta Katsuno, Tsubasa Nakashima, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
- Organizer
  IWN2014
- Place of Presentation
  wroclaw/poland
- Year and Date
  2014-08-27
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 窒化物半導体LEDにおける分極電荷の補償2014
- Author(s)
  勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
- Organizer
  第６回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] 窒化物半導体LEDにおける正孔伝導に対する分極電荷の影響2014
- Author(s)
  安田俊輝、勝野翔太、林健人、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
- Organizer
  日本結晶成長学会ナノエピ分科会2014春季講演会第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋/日本
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] p型GaN上のAg電極を用いた高反射電極の検討2014
- Author(s)
  河合俊介，飯田大輔，岩谷素顕，竹内哲也，上山智，赤﨑勇
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 高感度な窒化物半導体HFET型ソーラーブラインド紫外光センサー2014
- Author(s)
  村瀬卓弥, 石黒真未, 山田知明, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇
- Organizer
  第61回応用物理学会秋季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 分極制御による紫外発光素子のホール注入の検討2014
- Author(s)
  安田俊樹、林健人、竹田健一郎、中島翼、竹内哲也、上山智、岩谷素顕、赤崎勇、天野浩
- Organizer
  第61回応用物理学会秋季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 窒化物半導体LEDにおける分極電荷の補償2014
- Author(s)
  勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋/日本
- Year and Date
  2014-07-25
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] GaInN系トンネル接合を有するLED2014
- Author(s)
  南川大智, 井野匡貴, 竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
- Organizer
  第６回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋
- Year and Date
  2014-07-26
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] An alternative hole injection:Nitride-based tunnel junctions2014
- Author(s)
  T. Takeuchi, D. Minamikawa, Y. Kuwano, M. Watanabe, M. Iwaya, S. Kamiyama, I. Akasaki
- Organizer
  International conference on metamaterials and nanophysics 2014
- Place of Presentation
  Varadero, Cuba
- Invited
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Nitride-Based Light Emitting Diodes with Buried Tunnel Junctions2014
- Author(s)
  M. Ino, Y. Kuwano, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and Its Industrial Application ’14
- Place of Presentation
  パシフィコ横浜、横浜
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] III族窒化物半導体トンネル接合上の高効率LED2014
- Author(s)
  森田隆敏，井野匡貴，桑野侑香，渡邉雅大，岩谷素顕，竹内哲也，上山智，赤﨑勇
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] AlGaN系材料・発光デバイスの現状と今後の課題2014
- Author(s)
  石井貴大、袴田涼馬、若杉侑也、本田善央、天野造、山川雅康、伴和仁、永松謙太郎、岡田成仁、井村将隆、岩谷素顕
- Organizer
  (独)日本学術振興会第145委員会
- Place of Presentation
  明治大学駿河台キャンパス
- Year and Date
  2014-01-17
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation]2014
- Author(s)
  T. Morita, M. Kaga, Y. Kuwano, K. Matsui, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and its Industrial Application 2013
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Ⅲ族窒化物半導体トンネル接合を用いた電流狭窄構造の低抵抗化2014
- Author(s)
  井野　匡貴, 南川大智, 竹内哲也, 上山智, 岩谷素顕, 赤﨑勇
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  札幌
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Nitride-Based p-Side Down LEDs on Tunnel Junction2014
- Author(s)
  T. Morita, M. Kaga, Y. Kuwano, K. Matsui, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and Its Industrial Application ’13
- Place of Presentation
  パシフィコ横浜、横浜
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Observation of GaInN/GaN Superlattice Structures by In Situ X-ray Diffraction Monitoring during Metalorganic Vapor-Phase Epitaxial Growth2013
- Author(s)
  T. Yamamoto, D. Iida, Y. Kondo, M. Sowa, S. Umeda, T. Kato, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  Conference on LED and Its Industrial Application ’13
- Place of Presentation
  Yokohama
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] GaInNトンネル接合素子の低抵抗化2013
- Author(s)
  森田隆敏、加賀充、桑野侑香、松井健城、渡邉雅大、竹内哲也、岩谷素顕、上山智、赤崎勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] モスアイ加工サファイア基板によるLEDの光取り出し効率の改善2013
- Author(s)
  上屋貴義、梅田慎也、曽和美保子、河合俊介、近藤俊行、北野司、森みどり、鈴木敦志、赤崎勇、関根均、難波江宏一、岩谷素顕、竹内哲也、上山智
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation]2013
- Author(s)
  中島啓介、渡邉雅大、加賀充、鈴木智行、南川大智、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Advantages of the Moth-Eye Patterned Sapphire Substrate for the High Perfortnance Nitride Based LEDs2013
- Author(s)
  Toshiyuki Kondo, Tsukasa Kitano, Atsushi Suzuki, Midori Mori, Koichi Naniwae, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  10th International Conference of Nitride Semiconductors, Washington DC
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] トンネル接合を有する青色マイクロLED の電流電圧特性2013
- Author(s)
  中島啓介, 渡邉雅大 , 加賀充 , 鈴木智行 , 南川大智, 竹内哲也, 上山智 , 岩谷素顕, 赤崎勇
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Bandgap dependence in nitride semiconductor-based tunnel junctions2013
- Author(s)
  D. Minamikawa, M. Kaga, Y. Kuwano, T.Morita, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors 2013
- Place of Presentation
  Taiwan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Extreme Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N2013
- Author(s)
  Toru Sugiyama, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  10th International Conference of Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 青色面発光レーザに向けた電流狭窄構造の検討2013
- Author(s)
  中島啓介，渡邉雅大，加賀充，鈴木智行，南川大智，竹内哲也，上山智，岩谷素顕，赤﨑勇
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学、京都
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Externally high sensitivity group III nitride semiconductor based heterostructure field effect transistor type photosensors2013
- Author(s)
  M. Ishiguro, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  3rd International Conference on Materials and Applications for Sensors and Transducers
- Place of Presentation
  Prague, Czech Republic
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Reduction of the threshold power density in AlGaN/AlN multiquntum wells DUV (288 nm) optical pumped lasers2013
- Author(s)
  Tomoaki Yamada, Yuko Matsubara, Hiroshi Shinzato, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha Univ., Kyoto
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 10-μm-Square Micro LED Array with Tunnel Junction2013
- Author(s)
  Masahiro Watanabe, Mitsuru Kaga, Koji Yamashita, Tomoyuki Suzuki, Daichi Minamikawa, Yuka Kuwano, Tetsuya Takeuchi, Satoshi Karniyarna, Motoaki Iwaya, and Isarnu Akasaki
- Organizer
  10th International Conference of Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Influence of growth interruption on performance of nitride-based blue LED2013
- Author(s)
  K. Aoyama, A. Suzuki. I. Kitano, N. Sone. S. Kamiyama. T. Takeuchi, M. Iwaya, I. Akasaki
- Organizer
  SPIE Photonic west 2013
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 表面プラズモンカップリングを利用した緑色LEDの内部量子効率の向上2013
- Author(s)
  飯田大輔、Yuntian Chen、Yiyu Ou、Ahmed Fadil、Oleksii Kopylov、岩谷素顕、竹内哲也、上山智、赤﨑勇、Haiyan Ou
- Organizer
  第5回　窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] GaN低温成長におけるSb添加の効果2013
- Author(s)
  鈴木智行、笹島浩希、松原由布子、加賀充、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Bandgap Dependence in Nitride Semiconductor-Based Tunnel Junctions2013
- Author(s)
  D. Minamikawa, M. Kaga, Y. Kuwano, T. Morita, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  The 6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  New Taipei City, Taiwan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] トンネル接合を用いた多接合窒化物半導体の検討2013
- Author(s)
  黒川泰視, 合田智美, 加賀　充, 岩谷素顕, 竹内哲也, 上山　智, 赤﨑　勇, 天野　浩
- Organizer
  電子情報通信学会 (ED, CPM, LQE合同研究会）
- Place of Presentation
  大阪大学、大阪
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Nitride-Based p-Side Down LEDs on Tunnel Junction2013
- Author(s)
  T. Morita, M. Kaga, Y. Kuwano, K. Matsui, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and Its Industrial Application ’13
- Place of Presentation
  Yokohama
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 窒化物半導体二波長発光ダイオードにおける発光強度比の安定性2013
- Author(s)
  松井健城、山下浩司、加賀充、森田隆敏、鈴木智行、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation]2013
- Author(s)
  森田隆敏、加賀充、桑野侑香、松井健城、渡邉雅大、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] トンネル接合を用いたIII族窒化物半導体多接合型太陽電池2013
- Author(s)
  合田智美, 黒川泰視，森田隆敏, 岩谷素顕, 竹内哲也, 上山智, 赤﨑勇, 天野浩
- Organizer
  応用物理学会 SC東海地区学術講演会2013
- Place of Presentation
  名古屋大学、名古屋
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation]2013
- Author(s)
  竹内哲也、岩谷素顕、上山智、赤崎勇
- Organizer
  日本学術振興ワイドギャップ半導体光・電子デバイス第162委員会第86回研究会
- Place of Presentation
  名城大、名古屋
- Invited
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation]2013
- Author(s)
  D. Minamikawa, M. Kaga, Y. Kuwano, T. Morita, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors 2013
- Place of Presentation
  New Taipei City, Taiwan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] In situ X-ray diffraction monitoring of group III nitride growth by MOVPE2013
- Author(s)
  Motoaki Iwaya, Hironori Kurokawa, Yosuke Katsu, Taiji Yamamoto, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  Workshop on Ultra-Precision Processing for III-Nitride
- Place of Presentation
  Santa Barbara, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Moth-eye Patterned Sapphire Substrate technology for cost effective high performance LED2013
- Author(s)
  Toshiyuki Kondo, Tsukasa Kitano, Atsushi Suzuki, Midori Mori, Koichi Naniwae, Satoshi Kamiyama, Tetsuya Takeuchi , Motoaki Iwaya, and Isamu Akasaki
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] VSL法を用いたAlGaN/AlN多重量子井戸の光学利得測定2013
- Author(s)
  山田知明, 松原由布子, 竹田健一郎, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 天野浩
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] ナノELOによるm面GaInN厚膜の検討2013
- Author(s)
  小崎桂矢、近藤真一郎、土屋貴義、岩谷素顕、上山智、竹内哲也、赤崎勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 窒化物半導体における分極の影響と発光素子への応用2013
- Author(s)
  竹内哲也、岩谷素顕、上山智、赤﨑勇
- Organizer
  第5回　窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学
- Invited
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] トンネル接合を活用した窒化物半導体多接合太陽電池の作製2013
- Author(s)
  黒川泰視，合田智美，加賀充，岩谷素顕，竹内哲也，上山智，赤﨑勇，天野浩
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学、京都
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] 横方向p型活性化における雰囲気ガス依存性2013
- Author(s)
  桑野侑香、加賀充、森田隆敏、山下浩司、南川大智、竹内哲也、岩谷素顕、上山智、赤﨑勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Nitride-based p-side down LEDs on tunnel junction2013
- Author(s)
  T. Morita, M. Kaga, Y. Kuwano, K. Matsui, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and its industrial application '13
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] 新規GaNSb混晶の作製とGaSbモル分率成長温度依存性2013
- Author(s)
  笹島浩希, 鈴木智行, 松原由布子, 竹内哲也, 上山智, 岩谷素顕, 赤崎勇
- Organizer
  第5回　窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] その場観察X線回折法によるGaInN/GaN超格子構造の評価2013
- Author(s)
  山本泰司,　飯田大輔,　近藤保成,　曽和美保子,　梅田慎也, 岩谷素顕,　竹内哲也,　上山智,　赤崎勇
- Organizer
  第5回　窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] LED構造上GaNトンネル接合の低抵抗化2013
- Author(s)
  南川大智、加賀充.岩谷素顕.竹内哲也、上山智、赤崎勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation]2013
- Author(s)
  黒川泰視、合田智美、加賀充、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Externally high sensitivity group III nitride semiconductor based heterostructure field effect transistor type photosensors2013
- Author(s)
  M. Ishiguro, M. Mizuno, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  3rd International conterence on Materials and Applications for Sensors and Transducers
- Place of Presentation
  Progue, Czech Republic
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] LED構造上GaNトンネル接合の低抵抗化2013
- Author(s)
  南川大智、加賀充、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] 表面プラズモンカップリングを利用したGaInN/GaN量子井戸の評価2013
- Author(s)
  飯田大輔、Yuntian Chen、Yiyu Ou、Ahmed Fadil, Oleksii Kopylov、岩谷素顕、竹内哲也、上山智、赤崎勇、Haiyan Ou
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 非対称AlN/GaN多層膜反射鏡の設計と作製2013
- Author(s)
  萩原康大、矢木康太、安田俊輝、竹田健一郎、岩谷素顕、竹内哲也、上山智、赤﨑勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] MOVPE growth of embedded GaN nanocolumn2013
- Author(s)
  Shinya Umeda, Takahiro Kato, Tsukasa Kitano, Toshiyuki Kondo, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 350nm紫外LED光取り出し効率改善に関する研究2013
- Author(s)
  中嶋翼, 竹田健一郎, 岩谷素顕, 上山智, 竹内哲也, 赤崎勇, 天野浩
- Organizer
  電子情報通信学会(ED, CPM, LQE合同研究会)
- Place of Presentation
  大阪大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] In situ X-ray diffraction monitoring of GaInN growth by metalorganic vapor phase epitaxy2013
- Author(s)
  Motoaki Iwaya, Taiji Yamamoto, Daisuke Iida, Yasunari Kondo, Mihoko Sowa, Shinya Umeda, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  7th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] オーバーフロー抑制に向けたnp接合GaInN-LED2013
- Author(s)
  竹内哲也、岩谷素顕、上山　智、赤﨑　勇
- Organizer
  日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会　第86回研究会
- Place of Presentation
  名城大学、名古屋
- Invited
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] GaNSb混晶GaSbモル分率のSb/N比依存性2013
- Author(s)
  笹島浩希，鈴木智行，松原由布子，竹内哲也，上山智，岩谷素顕，赤﨑勇
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Realization of the High Conversion Efficiency Solar Cells using Nitride Semiconductors2013
- Author(s)
  Motoaki Iwaya, Yasushi Kurokawa, Yosuke Katsu, Taiji Yamamoto, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  10th International Conference of Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Stable Balance of Emission Intensities from Two Active Regions in Nitride Semiconductor-Based Light Emitting Diodes2013
- Author(s)
  Kenjo Matsui, Koji Yamashita, Mitsuru Kaga, Takatoshi Morita, Yuka Kuwano, Tomoyuki Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  10th International Conference of Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] トンネル接合を活用した窒化物半導体多接合太陽電池の作製2013
- Author(s)
  黒川泰視，合田智美，加賀充，岩谷素顕，竹内哲也，上山智，赤﨑勇，天野浩
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Dislocation density dependence of stimulated emission characteristics in AlGaN/AlN multi-quantum wells2013
- Author(s)
  Motoaki Iwaya, Yuko Matsubara, Tomoaki Yamada, Kenichiro Takeda, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasak, and Hiroshi Amano
- Organizer
  8th International Workshop on Bulk Nitride Semiconductor
- Place of Presentation
  Kloster Seeon, Germany
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] GaInNトンネル接合素子の低抵抗化2013
- Author(s)
  森田隆敏、加賀充、桑野侑香、松井健城、渡邉雅大、竹内哲也、上山智、岩谷素顕、赤﨑勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] 横方向p型活性化における雰囲気ガス依存性2013
- Author(s)
  桑野佑香、加賀充、森田隆敏、山下浩司、南川大智、竹内哲也、岩谷素顕、上山智,赤崎勇
- Organizer
  第60回応用物瑾学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 窒化物半導体における分極の影響と発光素子への応用2013
- Author(s)
  竹内哲也、岩谷素顕、上山　智、赤﨑　勇
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学、大阪
- Invited
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation]2013
- Author(s)
  M. Watanabe, M. Kaga, T. Suzuki, D. Minamikawa, Y. Kuwano, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Introduction of the Moth-eye patterned sapphire substrate technology for cost effective high-performance LED2013
- Author(s)
  K. Naniwae, M. Mori, T. Kondo, A. Suzuki, T. Kitano, S. Kamiyama, M. Iwaya, T. Takeuchi. I. Akasaki
- Organizer
  SPIE Photonic west 2013
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Direct Evidence of Electron Overflow by Monitoring Emissions from Second Active Region in Nitride-Based Blue LEDs2013
- Author(s)
  K. Hayashi, K. Matsui , T. Morita, T. Suzuki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and Its Industrial Application ’13
- Place of Presentation
  Yokohama
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Improvement of Light Extraction Efficiency in 350-nm Emission UV Light-Emitting Diodes2013
- Author(s)
  Tsubasa Nakashima, Kenitirou Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  10th International Conference of Nitride Semiconductors
- Place of Presentation
  Washington DC
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation]2013
- Author(s)
  M. Watanabe, M. Kaga, K. Yamashita, T. Suzuki, D. Minamikawa, Y. Kuwano, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  10th International Conference of Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] MOVPEにより作製したGaInN/GaN超格子構造のその場観察X線回折法による評価2013
- Author(s)
  山本秦司、飯田大輔.近藤保成、曽和美保子、岩谷素顕、竹内哲也.上山智,赤崎勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] In situ X-ray diffraction monitoring of OMVPE GaInN/GaN superlattice growth2013
- Author(s)
  Taiji Yamamoto, Daisuke Iida, Yasunari Kondo, Mihoko Sowa, Shinya Umeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  The 19th American Conference on Crystal Growth and Epitaxy
- Place of Presentation
  Keystone, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] トンネル接合を有する青色マイクロLED の電流電圧特性2013
- Author(s)
  中島啓介, 渡邉雅大 , 加賀充 , 鈴木智行 , 南川大智, 竹内哲也, 上山智 , 岩谷素顕, 赤崎勇
- Organizer
  第5回　窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Fabrication of moth-eye patterned sapphire substrate (MPSS) and influence of height of corns on the performance of blue LEDs on MPSS2013
- Author(s)
  S. Mizutani, S. Nakashima, M. Iwaya. T. Takeuchi, S. Kamiyama, I. Akasaki, T. Kondo, F. Teramae, A. Suzuki, T. Kitano, M. Mori, M. Matsubara
- Organizer
  SPIE Photonic west 2013
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Bandgap dependence in nitride semiconductor-based tunnel junctions2013
- Author(s)
  D. Minamikawa, M. Kaga, Y. Kuwano, T.Morita, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors 2013
- Place of Presentation
  New Taipei City, Taiwan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation]2013
- Author(s)
  桑野侑香、加賀充、森田隆敏、山下浩司、南川大智、竹内哲也、岩谷素顕、上山智、赤崎勇
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] 10 um square micro LED and 100 channel array with tunnel junctions2013
- Author(s)
  Masahiro Watanabe, Mitsuru Kaga, Koji Yamashita, Tomoyuki Suzuki, Daichi Minamikawa, Yuka Kuwano, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu Akasaki:
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  同志社大学、京都
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] GaNSb Alloys Grown by Low Temperature Metalorganie Vapor Phase Epitaxy2013
- Author(s)
  Tornoyuki Suzuki, Hiroki Sasajima, Yuuko Matsubara, Yugo Kozuka, Tetsuya Takeuchi, Satoshi Karniyama, Motoaki Iwaya, and Isamu Akasaki
- Organizer
  10th International Conference of Nitride Semiconductors
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 新規GaNSb混晶の作製及び高GaSbモル分率に向けた検討2013
- Author(s)
  笹島浩希，鈴木智行，松原由布子，竹内哲也，上山智，岩谷素顕，赤崎勇
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Realization of high efficiency nitride-based solar cells2012
- Author(s)
  I Iwaya, M. Mori, S. Kondo, S. Yamamoto, T. Nakao. T. Fujii, T. Takeuchi, S. Kamiyama, I. Akasaki, E Amano
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 基板・半導体層のナノ加工と半導体デバイスへの応用2012
- Author(s)
  岩谷素顕
- Organizer
  日本機械学会情報・知能・精密機器部門分科会第1回「窒化物半導体デバイスに関わる超精蚤加工プロセス研究会」発会記念特別講演会
- Place of Presentation
  福岡
- Year and Date
  2012-05-30
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 膜厚変化に伴うGaInN/GaNヘテロ接合の微細構造観察2012
- Author(s)
  松原大幸,飯田大輔、杉山徹、近藤保成、曽和美保子、岩谷素顕、竹内哲也、上山智、赤崎勇
- Organizer
  第4回窒化物半導体結晶成長講演会(プレIWN2012)
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation]2012
- Author(s)
  加賀充、山下浩司、森田隆敏、桑野侑香、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] III族窒化物半導体トンネル接合を用いたn-p接合LED2012
- Author(s)
  森田隆敏,加賀充,桑野侑香,松井健城,竹内哲也,上山智,岩谷素顕,赤崎勇
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] III族窒化物半導体トンネル接合を用いたn-p接合LED2012
- Author(s)
  森田隆敏，加賀　充，桑野侑香，松井健城，竹内哲也，上山　智，岩谷素顕，赤崎　勇
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Analysis of crystal growth on group III nitrides by in situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy2012
- Author(s)
  Motoaki Iwaya, Daisuke Iida, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  2012 International Symposium on Crystal Growth
- Place of Presentation
  Soul, Korea
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] GaInN/GaNヘテロ接合におけるミスフィット転位の観察2012
- Author(s)
  松原大幸,飯田大輔.杉山徹,近藤保成,曽和美保子,梅田慎也,岩谷素顕,竹内哲也、上山智.赤崎勇
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Mgドープ中間層を用いた二波長発光ダイオードにおける電流注入依存性量の検1152012
- Author(s)
  松井健城,山下浩司,加賀充,森田隆敏,鈴木智行,竹内哲也,上山智,岩谷素顕,赤崎勇
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Strain Relaxation Mechanism in GaInN/GaN Heterostructure Characterized by in situ X-ray Diffraction Monitoring During Metalorganic Vapor Phase Epitaxy Growth2012
- Author(s)
  M. Iwaya, D. Iida, T. Sugiyama, M. Sowa, Y. Kondo, H Matsubara, T. Takeuchi, S. Kamiyama. and l. Akasaki
- Organizer
  39th International Symposium on Compound Semiconductors
- Place of Presentation
  Santa Barbara, CA, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 窒化物半導体トンネル接合による低抵抗電流注入2012
- Author(s)
  加賀充、山下浩司、森田隆敏、桑野侑香、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇
- Organizer
  第59 回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Strain relaxation mechanism in GaInN/GaN heterostructure characterized by in XRD monitoring during growth and ex situ measurements2012
- Author(s)
  H. Matsubara. D. Iida, T. Sugiyama, Y. Kondo, M. Sowa, S. Umeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] AIGaN/AINにおける下地AIN転位密度依存性2012
- Author(s)
  井手公康,松原由布子,岩谷素顕,竹内哲也,上山智,赤崎勇,天野浩
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] MOVPE growth of embedded GaN nanocolumn2012
- Author(s)
  S. Umeda, T. Kato, T. Kitano, T. Kondo, H. Matsubara, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Lateral hydrogen diffusion at p-GaN layers in nitride-based LEDs with tunnel junctions2012
- Author(s)
  Y. Kuwano, M. Kaga, T. Morita, T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] n-GaN表面層を有する構造内p-GaNのMgアクセプタ活性化2012
- Author(s)
  桑野侑香、加賀充、森田隆敏、山下浩司、南川大智、竹内哲也、岩谷素顕、上山智、赤崎
- Organizer
  電子情報通信学会ED、CPM、LQE合同研究会
- Place of Presentation
  大阪
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation]2012
- Author(s)
  Y. Kuwano, M. Kaga, T. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] ELとPLを組み合わせたLED効率成分の導出方法の検討2012
- Author(s)
  青山和樹,鈴木敦志,北野司,上山智,竹内哲也,岩谷素顕,赤崎勇
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Observation of GaInN strain relaxation using in situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth2012
- Author(s)
  M. Iwaya, D. Iida, D. Tanaka, T. Sugiyama, M. Sowa, Y. Kondo, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  5th LED and solid state lighting conference
- Place of Presentation
  Pusan, Korea
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] n型GaN直下におけるトンネル接合およびp型GaN活性化の検討2012
- Author(s)
  桑野侑香、山下浩司、加賀充、森田隆敏、竹内哲也、岩谷素顕、上山智、赤﨑勇
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] サファイア基板上へのモスアイ構造の形成方法の検討およびLEDへの応用2012
- Author(s)
  土屋貴義、梅田慎也、曽和美保子、近藤俊行、北野司、森みどり、鈴木敦志、難波江宏一、関根均、岩谷素顕、竹内哲也、上山智、赤崎勇
- Organizer
  電子情報通信学会ED、CPM、LQE合同研究会
- Place of Presentation
  大阪
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Carrier injections in nitride-based light emitting diodes including two actiregions with Mg-doped intermediate layers2012
- Author(s)
  K. Matsui, K. Yamashita, M. Kaga, T. Morita, T. Suzuki, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 埋め込み型GaNナノコラム結晶のMOVPE成長に関する検討2012
- Author(s)
  梅田慎也、加藤嵩裕、北野司、近藤俊行、松原大幸、上山智、竹内哲也、岩谷素顕、赤崎勇
- Organizer
  第4回窒化物半導体結晶成長講演会(プレIWN2012)
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Optimizations of Nitride Semiconductor-Based Tunnel Junctions2012
- Author(s)
  M. Kaga, K. Yamashita, T. Morita, Y. Kuwano, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  16th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Pusan, Korea
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] ITOとSi02/AIN誘電体多層膜を組み合わせた電極による350nm紫外LEDの高効率化2012
- Author(s)
  中嶋翼,竹田健一郎,新里紘史,岩谷素顕,上山智,竹内哲也,赤崎勇,天野浩
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Observation group III nitrides semiconductors by in situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth2012
- Author(s)
  Motoaki Iwaya, Daisuke Iida, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  2012 Collaboractive Conference on Crystal Growth
- Place of Presentation
  Orland, USA
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Composition dependence of critical thicknesses in GaInN/GaN characterized by in situ X-ray diffraction measurement2012
- Author(s)
  Y. Kondo, D. Iida, T. Sugiyama. M. Sowa, H. Matsubara, M. Iwaya, T. Takeuchi, S. Kamiyama, and l. Akasaki
- Organizer
  4th International Symposium on Growth of III-Nitrides
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Investigation of AlN/GaN Multilayer Stacks for DBR Applications2012
- Author(s)
  K. Yagi, M. Kaga, K. Yamashita, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, H. Amano, and I. Akasaki
- Organizer
  16th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Pusan, Korea
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Observation of GaInN strain relaxation using in situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth2012
- Author(s)
  I Iwaya, D. Iida, D. Tanaka, T. Sugiyama, M. Sowa, Y. Kondo, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
- Place of Presentation
  Pusan, Korea
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Understanding the relationship between IQE and defects in nitride-based LEDs2012
- Author(s)
  M. Iwaya and H. Amano
- Organizer
  2012 SPIE Photonics west
- Place of Presentation
  San Francisco USA
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] DBR 応用のためのAlN/GaN 多層膜積層構造の検討2012
- Author(s)
  矢木康太、加賀充、山下浩司、竹田健一郎、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第59 回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] AlN mole fraction dependence of polarization induced hole concentrations in GaN/AlGaN heterostructures2012
- Author(s)
  T. Yasuda, K. Yagi, Tomoyuki Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] AlGaInN量子井戸の発光特性に関する検討2012
- Author(s)
  鈴木智行、加賀充、北野司、難波江宏一、平野敬祐、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第59 回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] AIN mole Fraction dependence of polarization induced hole concentrations in GaN/AIGaN heterostructures2012
- Author(s)
  T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, S. Kamiyama, M. Iwaya, I.Akasaki
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation]2012
- Author(s)
  桑野侑香、山下浩司、加賀充、矢木康太、森田隆敏、松井健城、竹内哲也、岩谷素顕、上山智、赤崎勇、天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation]2012
- Author(s)
  森田隆敏、加賀充、桑野侑香、松井健城、岩谷素顕、竹内哲也、上山智、赤崎勇
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] GaInN量子井戸へのAI添加によるAlGalnN量子井戸の作製と評価2012
- Author(s)
  鈴木智行、加賀充、北野司、難波江宏一、平野敬祐、竹内哲也、上山智、岩谷素、赤崎勇
- Organizer
  第4回窒化物半導体結晶成長講演会(プレIWN2012)
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 100チャンネル10μm径マイクロLEDアレイの作製2012
- Author(s)
  渡邉雅大,山下浩司,加賀充,鈴木智行,森田隆敏,竹内哲也,上山智,岩谷素顕,赤崎勇
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] X線その場観察MOVPEにより評価したGaInN/GaNの臨界膜厚2012
- Author(s)
  近藤保成、飯田大輔、杉山徹、曽和美保子、松原大幸、岩谷素顕、竹内哲也、上山智、赤崎勇
- Organizer
  第4回窒化物半導体結晶成長講演会(プレIWN2012)2012
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 窒化物半導体太陽電池の高効率化2012
- Author(s)
  岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Composition dependence of critical thicknesses in GaInN/GaN characterized by situ X-ray diffraction measurement2012
- Author(s)
  . Kondo, D. Iida, T. Sugiyama, H. Matsubara, M. Sowa, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] III族窒化物半導体を用いた低抵抗トンネル接合2012
- Author(s)
  森田隆敏、加賀充、桑野侑香、山下浩司、松井健城、竹内哲也、上山智、岩谷素顕、赤﨑勇
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Observation of GaInN strain relaxation by in situ X-ray diffraction monitoring during metalorganic vapour phase epitaxy growth2012
- Author(s)
  M. Iwaya, D. Iida, T. Sugiyama, M. Sowa, Y. Kondo, H Matsubara, T. Takeuchi, S. Kamiyama, and l. Akasaki
- Organizer
  4th International Symposium on Growth of III-Nitrides
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Microstructure of AIGaN on Low-Dislocation Density AIN Underlying Layer Grown by Epitaxial Lateral Overgrowth2012
- Author(s)
  K Ide. J. Yamamoto, M. Iwaya, S. Kamiyama, T. Takeuchi, I. Akasaki, and H Amano
- Organizer
  16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
- Place of Presentation
  Pusan, Korea
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] ピエゾ・自発分極電荷への正孔蓄積の検討2012
- Author(s)
  安田俊輝,矢木康太,鈴木智行,中嶋翼,渡邉雅大、竹内哲也,上山智,岩谷素顕,赤崎勇
- Organizer
  第73回応用物理学会講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Optimization of crystalline quality of GaN using low temperature buffer layer by in situ X-ray diffraction monitoring2012
- Author(s)
  D. Tanaka, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] n型GaN直下におけるトンネル接合およびp型GaN活性化の検討2012
- Author(s)
  桑野侑香、山下浩司、加賀充、森田隆敏、竹内哲也、岩谷素顕、上山智、赤崎勇
- Organizer
  第4回窒化物半導体結晶成長講演会(プレIWN2012)
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation]2012
- Author(s)
  M. Kaga, M. Yamashita, T. Morita, Y. Kuwano, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  16th International Conference on Metal Organic Vapor Phase Epitaxy
- Place of Presentation
  Pusan, Korea
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Understanding the relationship between IQE and defects in nitride-based LEDs2012
- Author(s)
  Motoaki Iwaya, Hiroshi Amano
- Organizer
  2012 SPIE Photonics west
- Place of Presentation
  San Francisco USA(招待講演)
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Study on efficiency component estimation by electroluminescence and photoluminescense intensities2012
- Author(s)
  K. Aoyama, A. Suzuki, T. Kitano, S. Kamiyama, T. Takeuchi, M. Iwaya, I. Akasaki
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Microstructure analysis of AIGaN on underlying layers with different thread dislocation densities2012
- Author(s)
  K. Ide, Y. Matsubara, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The International Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation]2012
- Author(s)
  T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama, and Isamu Akasaki
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation]2012
- Author(s)
  M. Kaga, T. Morita, Y. Kuwano, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Optimizations of Nitride Semiconductor-Based Tunnel Junctions2012
- Author(s)
  M. Kaga, K. Yamashita, T. Morita, Y. Kuwano, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and l. Akasaki
- Organizer
  16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
- Place of Presentation
  Pusan, Korea
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] 二つの活性層を有する窒化物半導体発光ダイオードのキャリア注入制御2012
- Author(s)
  松井健城、山下浩司、加賀充、森田隆敏、鈴木智行、竹内哲也、上山智、岩谷素顕、赤崎勇
- Organizer
  第59 回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] n 型GaN 表面層を有するトンネル接合p 型層活性化の検討2012
- Author(s)
  桑野侑香、山下浩司、加賀充、矢木康太、森田隆敏、松井健城、竹内哲也、岩谷素顕、上山智、赤崎勇、天野浩
- Organizer
  第59 回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Observation of GaInN strain relaxation using in situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth2012
- Author(s)
  M.Iwaya, D.Iida, D.Tanaka, T.Sugiyama, M.Sowa, Y.Kondo, T.
- Organizer
  5th LED and solid state lighting conference
- Place of Presentation
  Pusan, Korea(招待講演)
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Fabrication of the High Efficiency GaInN Based Solar Cells2011
- Author(s)
  Motaoki Iwaya, Yosuke Kuwahara, Takahiro Fujii, Yoshiki Morita
- Organizer
  16th Semiconducting and Insulating Materials Conference (SIMC-XVI)
- Place of Presentation
  Stockholm, Sweden(招待講演)
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Realization of high conversion-efficiency GaInN based solar cells2011
- Author(s)
  M. Iwaya, Y. Kuwahara, T. Fujii, Y. Fujiyama, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano
- Organizer
  SPIE Photonic West
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] 窒化物半導体トンネル接合に向けた高濃度ドーピング2011
- Author(s)
  加賀　充、山下　浩司、矢木　康太、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Internal quantum efficiency of nitride-basedlight emitting devices2011
- Author(s)
  H. Amano, T. Tabata, G. J. Park, T. Murase, T. Sugiyama, T. Tanikawa, Y. Kawai, Y. Honda, M. Yamaguchi, K. Takeda, M. Iwaya, T. Takeuchi, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Toba, Mie, Japan
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] AlGaN量子井戸構造の光学的特性2011
- Author(s)
  山本準一、伴和仁、竹田健一郎、井手公康、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High temperature MOVPE of AlGaN for UV/DUV devices and increased pressure MOVPE of InGaN for green/yellow devices2011
- Author(s)
  H. Amano, T. Ohata, S. Sakakura, T. Sugiyama, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Miyoshi, M. Imade, Y. Mori, K. Ban, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  E-MRS ICAM IUMRS 2011 Spring Meeting
- Place of Presentation
  Nice, France
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] AlN/GaN多層膜反射鏡の高反射率化2011
- Author(s)
  矢木康太、加賀充、山下浩司、竹田健一郎、谷川智之、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Metalorganic Vapor Epitaxy growth of nitrides analyzed using a novel in situ X-ray diffraction system2011
- Author(s)
  D. Tanaka, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  The 9th International Conference of Nitride Semiconductors
- Place of Presentation
  Glasgow United Kingdum
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] 紫外発光素子用反射電極の検討2011
- Author(s)
  竹原孝祐、竹田健一郎、永田賢吾、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] IQE and EQE of the nitride-based UV/DUV LEDs2011
- Author(s)
  H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  CLEO 2011
- Place of Presentation
  Baltimore, Maryland, USA
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Realization of high-conversion-efficiency GaInN based solar cells2011
- Author(s)
  M.Iwaya, Y.Kuwahara, T.Fujii, Y.Fujiyama, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
- Organizer
  SPIE Photonic West
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] 窒化物半導体トンネル接合の作製2011
- Author(s)
  加賀充、飯田大輔、北野　司、山下浩司、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Improvement of the light extraction efficiency in the GaN based LED by moth-eye structure2011
- Author(s)
  M. Iwaya, T. Kondo, A. Ishihara, T. Kitano, K. Naniwae, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  The 11th International Meeting on Information Display
- Place of Presentation
  Seoul, Korea
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation]2011
- Author(s)
  加賀充、山下浩司、矢木康太、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method2011
- Author(s)
  M. Iwaya, M. Yamakawa, K. Murata, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano, and M. Azuma
- Organizer
  The 9th International Conference of Nitride Semiconductors
- Place of Presentation
  Glasgow United Kingdum
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] GaN系デバイス用基板としてのサファイアに対する期待2011
- Author(s)
  岩谷素顕
- Organizer
  第41回結晶成長国内会議
- Place of Presentation
  つくば
- Year and Date
  2011-11-04
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Improvement of the light extraction efficiency in the GaN based LED by moth-eye structure2011
- Author(s)
  M.Iwaya, T.Kondo, A.Ishihara, T.Kitano, K.Naniwae, T.
- Organizer
  The 11th International Meeting on Information Display
- Place of Presentation
  Seoul, Korea(招待講演)
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] IQE and EQE of the nitride-based UV/DUV LEDs2011
- Author(s)
  M.Iwaya, H.Amano, G.J.Park, T.Tanikawa Y.Honda, M.
- Organizer
  CLEO 2011
- Place of Presentation
  Baltimore, Maryland, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] AlGaN UV-LEDの光取り出し効率の改善2011
- Author(s)
  稲津哲彦、深堀真也、シリルペルノ、金明姫、藤田武彦、長澤陽祐、平野光、一本松正道、岩谷素顕、天野浩、竹内哲也、上山智、赤崎勇
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] β-Ga_2O_3(100)基板上GaN及びAlGaNの成長2011
- Author(s)
  伊藤駿、竹田健一郎、永田賢吾、青島宏樹、竹原孝祐、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Freestanding highly crystalline single crystal AlN substrates grown by a novel closed sublimation method2011
- Author(s)
  Motoaki Iwaya, Masayasu Yamakawa, Kazuki Murata, Tetsuya
- Organizer
  The 9th International Conference of Nitride Semiconductors
- Place of Presentation
  Glasgow United Kingdum(招待講演)
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] 350nm帯紫外LED及びLD構造の注入効率向上2011
- Author(s)
  竹田健一郎、永田賢吾、竹原孝祐、青島宏樹、野中健太朗、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] レーザリフトオフ法による薄膜紫外LED2011
- Author(s)
  青島宏樹、竹田健一郎、永田賢吾、竹原孝祐、伊藤駿、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] AlNテンプレートを用いた高品質AlN/GaN多層膜反射鏡の作製2011
- Author(s)
  矢木康太、加賀充、山下浩司、竹田健一郎、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] III族窒化物半導体トンネル接合を用いた電流経路の検討2011
- Author(s)
  山下浩司、加賀充、矢木康太、鈴木敦志、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  電子情報通信学会電子部品・材料研究会
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-23560015
[Presentation] GaN系デバイス用基板としてのサファイアに対する期待2011
- Author(s)
  岩谷素顕
- Organizer
  第41回結晶成長国内会議
- Place of Presentation
  つくば(招待講演)
- Year and Date
  2011-11-04
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Fabrication of the High Efficiency GaInN Based Solar Cells2011
- Author(s)
  M. Iwaya, Y. Kuwahara, T. Fujii, Y. Morita, T. Nakao, S. Yamamoto, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  16th Semiconducting and Insulating Materials Conference(SIMC-XVI)
- Place of Presentation
  School of Information and Communication Technology, KTH, Stockholm
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] 紫外領域LEDの現状とその可能性2011
- Author(s)
  岩谷素顕
- Organizer
  第25回日本レーザー医学会東海地方会(特別講演)
- Place of Presentation
  名古屋市立大学
- Year and Date
  2011-07-24
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] その場観察X線回折測定を用いた窒化物半導体のMOVPE成長2011
- Author(s)
  飯田大輔、岩谷素顕、竹内哲也、上山智、赤崎勇
- Organizer
  第41回結晶成長国内会議
- Place of Presentation
  つくば
- Year and Date
  2011-11-04
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Role of stacking faults in misfit strain relaxation in m-plane InGaN quantum wells2010
- Author(s)
  A.M.Fischer, Z.H.Wu, F.A.Ponce, R.Senda, D.Iida, M.Iwaya, H.Amano
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Development of High Efficiency 255-350 nm AlGaN-Based Light-Emitting Diodes2010
- Author(s)
  Cyril Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Organizer
  International Workshop on Nitride semiconductors (IWN 2010)
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] MgドープAlN下地層を用いた低転位AlGaNの転位挙動2010
- Author(s)
  野中健太朗, 浅井俊晶, 伴和仁, 山本準一, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 天野浩, Z.H.Wu
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Reduction in threshold current density of UV laser diode2010
- Author(s)
  Kengo Nagata, Kentaro Nonaka, Tomoki Ichikawa, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Microstructure of GaInN/GaInN Superlattice on GaN Substrate2010
- Author(s)
  T.Sugiyama, Y.Kuwahara, Y.Isobe, T.Fujii, K.Nonaka, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano
- Organizer
  International Workshop on Nitride semiconductors
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation2010
- Author(s)
  Z. H. Wu, K. Nonaka, Y. Kawai, T. Asai, F. A. Ponce, C. Q. Chen, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] GaInN/GaInN超格子構造を用いた窒化物半導体太陽電池の高性能化2010
- Author(s)
  桑原洋介、藤山泰治、森田義己、藤井崇裕、杉山徹、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Microstructure of Thick AlGaN Epilayers Using Mg-doped AlN Underlying Layer2010
- Author(s)
  K.Nonaka, T.Asai, K.Ban, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, Z.H.Wu
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] GaN基板を用いた窒化物太陽電池の特性評価2010
- Author(s)
  桑原洋介、藤山泰治、森田義己、藤井崇裕、杉山徹、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] 紫外発光素子用透明電極の検討2010
- Author(s)
  深堀真也, シリルペルノ, 金明姫, 藤田武彦, 稲津哲彦, 長澤陽祐, 平野光, 一本松正道, 岩谷素顕, 上山智, 赤崎勇, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 非極性・半極性窒化物半導体の結晶成長技術2010
- Author(s)
  岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Transparent Electrode for UV Light-Emitting-Diodes2010
- Author(s)
  Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hisashi Sakurai, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Organizer
  International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] MgドープAlN下地層を用いた高品質厚膜AlGaNの微細構造観察2010
- Author(s)
  野中健太朗、浅井俊晶、伴和仁、岩谷素顕、上山智、天野浩、赤崎勇、Zhihao Wu
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] ELO AlGaN下地層上に作製した紫外レーザダイオードの特性評価2010
- Author(s)
  竹田健一郎, 永田賢吾, 竹原孝祐, 青島宏樹, 伊藤駿, 押村吉徳, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤崎勇, 吉田治正, 桑原正和, 山下陽滋, 菅博文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Injection Efficiency in AlGaN-based UV Laser Diode2010
- Author(s)
  Kengo Nagata, Kenichiro Takeda, Yoshinori Oshimura, Kosuke Takehara, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
- Organizer
  International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 酸化ジルコニウムを用いたサファイア基板上LEDの作製2010
- Author(s)
  田村健太, 飯田大輔, 山口修司, 近藤俊行, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] UVレーザダイオードの閾値電流密度の低減2010
- Author(s)
  永田賢吾、野中健太朗、市川友紀、竹田健一郎、岩谷素顕、上山智、天野浩、赤崎勇、吉田治正、桑原正和、山下陽滋、菅博文
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Recent development and future prospects of the fabrication of GaInN-based solar cells2010
- Author(s)
  H. Amano, T. Sugiyama, Y. Kuwahara, Y. Fujiyama, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  The 37th International Conference of Compound Semiconductors
- Place of Presentation
  Takamatsu
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN2010
- Author(s)
  Hiroshi Amano, Masahito Yamaguchi, Yoshio Honda, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16)
- Place of Presentation
  Beijing, China(招待講演)
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Optical waveguide layers in UV laser diodes on the low dislocation density AlGaN underlying layer2010
- Author(s)
  Kenichiro Takeda, Tomoki Ichikawa, Kengo Nagata, Daisuke Sawato, Yuji Ogiso, Yoshinori Oshimura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
- Organizer
  The 37th International Conference of Compound Semiconductors
- Place of Presentation
  Takamatsu, Japan
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation2010
- Author(s)
  Z.H.Wu, K.Nonaka, Y.Kawai, T.Asai, F.A.Ponce, C.Q.Chen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Transmission-electron-microscope characterization of AlGaN/GaN heterostructure on miscut GaN substrate grown by Na flux method2010
- Author(s)
  Tatsuyuki Sakakibara, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Mamoru Imada, Yasuo Kitaoka, Yusuke Mori
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 高組成AlGaN量子井戸構造の光学的特性2010
- Author(s)
  伴和仁、竹田健一郎、山本準一、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN2010
- Author(s)
  Hiroshi Amano, Masahito Yamaguchi, Yoshio Honda, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Optimization of Initial Growth of the Nonpolar m-plane and a-plane GaN Grown on LPE-GaN Substrates by Na Flux Method2010
- Author(s)
  Y.Isobe, D.Iida, T.Sakakibara, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, M.Imade, Y.Kitaoka, Y.Mori
- Organizer
  International Workshop on Nitride semiconductors(IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] 昇華法による単結晶AlNの高速成長2010
- Author(s)
  山川雅康, 村田一喜, 岩谷素顕, 上山智, 竹内哲也, 赤崎勇, 天野浩, 東正信
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Fabrication of nitride-based solar cells on freestanding GaN substrate2010
- Author(s)
  Y.Kuwahara, Y.Fujiyama, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN2010
- Author(s)
  H.Amano, M.Yamaguchi, Y.Honda, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16) 招待講演
- Place of Presentation
  Beijing, China.
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 非極性・半極性窒化物半導体の結晶成長技術2010
- Author(s)
  岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学(招待講演)
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] High-InN-molar-fraction Nitride-based Solar Cells using GaInN/GaInN Superlattice2010
- Author(s)
  Takahiro Fujii, Yosuke Kuwahara, Daisuke Iida, Yasuharu Fujiyama, Yoshiki Morita, Toru Sugiyama, Yasuhiro Isobe, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Organizer
  International Workshop on Nitride semiconductors(IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Homoepitaxial growth of m-plane GaN film on miscut GaN substrates grown by Na flux method2010
- Author(s)
  Y.Isobe, D.Iida, T.Sakakibara, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, M.Imade, Y.Kitaoka, Y.Mori
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] p-AlGaNの活性化アニール特性2009
- Author(s)
  永田賢吾, 竹田健一郎, 市川友紀, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
- Place of Presentation
  東京農工大小金井キャンパス1号館1階ホール
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] モスアイ構造の作製と半導体発光素子への応用2009
- Author(s)
  上山智、瀬古知世、馬渕翔、岩谷素顕、天野浩、赤崎勇、寺前文晴、近藤俊行
- Organizer
  第161委員会、第162委員会合同研究会
- Place of Presentation
  鳥羽
- Year and Date
  2009-03-14
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] 斜めファセット面を用いたAlGaNの全面低転位化2009
- Author(s)
  竹田健一郎, 森史明, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 日本結晶成長学会ナノエピ分科会予稿集, SAT-18, (2009-5)
- Organizer
  第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
- Place of Presentation
  東京農工大小金井キャンパス1号館1階ホール
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Defects in Highly Mg-Doped AlN2009
- Author(s)
  K.Nonaka, T.Asai, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Organizer
  The 8th International Conference on Nitride Semiconductors
- Place of Presentation
  済州島、韓国
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Mg-doped AIN下地層を用いたAlGaN成長2009
- Author(s)
  浅井俊晶, 野中健太郎, 伴和仁, 永田賢昌, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇, SAT-2, pp.85, (2009-5)
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大小金井キャンパス1号館1階ホール
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth of Low-Dislocation-Density AlGaN using Mg-Doped AlN Underlying Layer2009
- Author(s)
  T.Asai, K.Nonaka, K.Ban, K.Nagata, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  済州島、韓国
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High-performance group-III-nitride-based light-emitting solar cells(LESCs)2009
- Author(s)
  M.Iwaya, Y.Kuwahara, Y.Fujiyama, D.Iida, S.Kamiyama, H.Amano, I.Akasaki
- Organizer
  The International Conference on Advanced Materials(ICAM)
- Place of Presentation
  Rio de Janeiro, Brazil
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Internal Quantum Efficiency of GaN/AlGaN Multi Quantum Wells on Different Dislocation Density Underlying Layer2009
- Author(s)
  Kenichiro Takeda, Fumiaki Mori, Yuji Ogiso, Tomoki Ichikawa, Kentaro Nonaka, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Organizer
  ICNS 8
- Place of Presentation
  済州島、韓国
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate2009
- Author(s)
  T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki
- Organizer
  SPIE Photonics West. 2009
- Place of Presentation
  サンノゼ(米国)
- Year and Date
  2009-01-28
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate2009
- Author(s)
  瀬古知世、馬渕翔、寺前文晴、鈴木敦志、金子由基夫、河合良介、上山智、岩谷素顕、天野浩、赤崎勇
- Organizer
  SPIE Photonics West 2009
- Place of Presentation
  San Jose, USA
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes2009
- Author(s)
  H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  SIMC-XV 招待講演
- Place of Presentation
  Vilnius, Lithuania.
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth and Conductivity Control of High-Quality GaInN for the Realization of High Efficiency Photovoltaic Devices2009
- Author(s)
  H.Amano, Y.Kuwahara, Y.Fujiyama, Y.Morita, D.Iida, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  POEM2009
- Place of Presentation
  Wuhan, China
- Year and Date
  2009-08-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 持続可能な社会システム構築のための窒化物半導体の役割2009
- Author(s)
  天野浩、岩谷素顕、上山智、赤崎勇
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大小金井キャンパス1号館1階ホール
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Challenge for short wavelength semiconductor UV laser diodes2009
- Author(s)
  H.Amano, H.Tsuzuki, T.Mori, K.Takeda, K.Nagamatsu, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  Proceedings of SPIE Volume 7216
- Place of Presentation
  San Jose Convention Center, USA
- Year and Date
  2009-01-28
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High Output Power AlGaN/GaN Ultraviolet Light Emitting Diodes by Activation of Mg-Doped P-Type AlGaN in Oxygen Ambient2009
- Author(s)
  Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Organizer
  ICNS 8
- Place of Presentation
  済州島、韓国
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 酸素雰囲気中でのp型AlGaNの活性化による高出力AlGaN/GaN紫外LED2009
- Author(s)
  永田賢吾, 竹田健一郎, 市川友紀, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  応用物理学会第70回応用物理学関連連合講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 活性化アニールによるp型Al_<0.17>Ga_<0.83>Nの正孔濃度と接触比抵抗の評価2009
- Author(s)
  永田賢吾, 竹田健一郎, 永松謙太郎, 都築宏俊, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  応用物理学会第56回応用物理学関連連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High-performance group III nitride-based light-emitting solar cells(LESCs)2009
- Author(s)
  M. Iwaya, Y. Kuwahara, Y. Fujiyama, D. Iida, S. Kamiyama, H. Amano, and I. Akasaki
- Organizer
  The International Conference on Advanced Materials(ICAM)
- Place of Presentation
  Brazil
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Mg-doped AIN下地層によるAlGaNの低転位化の機構2009
- Author(s)
  浅井俊晶, 野中健太朗, 伴和仁, 永田賢昌, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 非極性a面p-GaNのMg濃度の最適化2009
- Author(s)
  田村健太、飯田大輔、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第70回応用物理学関係連合講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes2009
- Author(s)
  H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  SIMC-XV
- Place of Presentation
  Vilnius, Lithuania
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Strain control in GaInN/GaN multiple quantum wells for high-performance green-light emitters2009
- Author(s)
  M. Iwaya, D. Iida, T. Matsubara, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  E-MRS Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] Mg-doped AIN下地層を用いた低転位AlGaNの微細構造観察2009
- Author(s)
  野中健太朗, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth and conductivity control of high-quality-thick GaInN for the realization of high-efficiency photovoltaic cells2009
- Author(s)
  H. Amano, Y. Kuwahara, Y. Fujiyama, Y. Morita, D. Iida, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  The 2^<nd> Photonics and OptoElectronics Meetings(POEM 2009)
- Place of Presentation
  Uhan, China
- Data Source
  KAKENHI-PROJECT-21686034
[Presentation] AlGaN中のMgの活性化エネルギー(II)2009
- Author(s)
  永松謙太郎, 浅井俊晶, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 高温MOVPEを用いたAlN周期溝上AlGaN中の転位密度のAlNモル分率依存性2008
- Author(s)
  浅井俊晶、住井隆文、加藤尚文、佐藤周夜、森俊晶、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(船橋校舎)
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Activation energy of Mg in AlGaN2008
- Author(s)
  K. Nagamatsu, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. and Akasaki
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Swiss
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] NおよびAlをドープした6H-SiCの光学特性評価2008
- Author(s)
  三好晃平、上山智、岩谷素顕、天野浩、赤崎勇
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] p型GaNゲートノーマリーオフ型AlGaN/GaN MIS JHFETのSiNxによる閾値電圧制御2008
- Author(s)
  杉山貴之, 根賀亮平, 水野克俊, 藤井隆弘, 中村彰吾, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋校舎
- Data Source
  KAKENHI-PROJECT-18760259
[Presentation] Short wavelength semiconductor laser diodes2008
- Author(s)
  H. Amano, H. Tsuzuki, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, I. Akasaki
- Organizer
  Japan- Brazil Memorial Symposium on Science and Technology for the Celebration of 100 Years of Japanese Immigration in Brazil
- Place of Presentation
  Universidade de Sao Paulo, Brazil
- Year and Date
  2008-06-25
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Relaxation process of Al_xGa_<1-x>N grown on high-crystalline-quality A1N2008
- Author(s)
  T. Asai, K. Nagata, T. Mori, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Organizer
  Technical Digest ISGN-2
- Place of Presentation
  伊豆
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] AlN上AlGaNの結晶回復過程と溝加工テンプレートによる低転位化2008
- Author(s)
  竹田健一郎, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  文部科学省科学研究費補助金特定領域研究公開シンポジウム「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」
- Place of Presentation
  東京
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Novel UV devices on high quality AlGaN using grooved template2008
- Author(s)
  H. Tsuzuki, F. Mori, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, H. Kan
- Organizer
  Abstracts of the Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  伊豆
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 高正孔濃度p型AlGaN2008
- Author(s)
  永松謙太郎, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
- Place of Presentation
  東京
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Microstructure in Al_xGai_<1-x>N grown on AlN2008
- Author(s)
  Toshiaki Mori, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki
- Organizer
  International Workshop on Nitride semiconductors
- Place of Presentation
  Montreux, Swiss
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Optimization of electrode configuration in large GaInN light-emitting2008
- Author(s)
  落合渉、河合良介、鈴木敦志、岩谷素顕、天野浩、上山智、赤崎勇
- Organizer
  diodes
- Place of Presentation
  Rust Germany
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] ELOを用いた高温MOVPE成長AlN/Sapphire基板上のUV-LD特性評価2008
- Author(s)
  都築宏俊, 森史明, 市川友紀, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 吉田治正, 桑原正和, 山下陽滋, 菅博文
- Organizer
  第69回応用物理学会学術講演会講演予稿集
- Place of Presentation
  中部大
- Year and Date
  2008-09-05
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High-reflectivity Ag-based ohmic contacts for blue light-emitting diodes2008
- Author(s)
  河合良介、森俊晶、落合渉、鈴木敦志、岩谷素顕、天野浩、上山智、赤崎勇
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Monteux, Switzerland
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] 周期溝下地結晶を用いたAl_<0.5>Ga_<0.5>Nの低転位化2008
- Author(s)
  竹田健一郎, 森史明, 小木曽裕二, 森俊晶, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] ELOを用いた高温MOVPE成長AlN/サファイア基板上の高効率UV LED2008
- Author(s)
  都築宏俊、森史明、市川友紀、竹田健一郎、渡邊浩崇、飯田一喜、岩谷素顕、上山智、天野浩、赤崎勇、坂東章
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(船橋校舎)
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] AlGaN中のMgの活性化エネルギー2008
- Author(s)
  永松謙太郎、岡田成仁、井村将隆、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(船橋校舎)
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Microstructure of AlN grown on SiC by high-temperature metalorganic vapor phase epitaxy and epitaxial lateral overgrowth2007
- Author(s)
  M. Imura, N. Okada, B. Krishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Organizer
  The 13th Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Extremely Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by High Temperature MOVPE2007
- Author(s)
  B. Krishnan, H. Sugimura, A. Band oh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  The 7th International Conference of Nitride Semi conductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Stimulated Emission from Nonpolar and Polar AlN2007
- Author(s)
  N. Okada, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani, Y. Yamada
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Nitride-Based UV Lasers2007
- Author(s)
  H. Amano, N. Kato, N. Okada, T. K awashima, K. Iida, K. Nagamatsu, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama and I. Akasaki
- Organizer
  The 20th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS 2007)
- Place of Presentation
  Florida, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] p型GaNゲートを用いた低オン抵抗ノーマリーオフ型AlGaN/GaN Junction HFETs2007
- Author(s)
  根賀亮平、藤井隆弘、中村彰吾、露口士夫、川島毅士、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  春季第54回応用物理学会関係連合講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] p型GaNゲートを用いた高出力低損失normally-off型AlGaN/GaNHFETs2007
- Author(s)
  藤井隆弘、露口士夫、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  春季第54回応用物理学会関係連合講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] p型GaNゲートを用いたnormally-off型A1GaN/GaN HFETsの構造最適化2007
- Author(s)
  水野克俊、藤井隆弘、中村彰吾、根賀亮平、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] UV Emitters Grown on High Crystalline Quality AlGaN on Sapphire2007
- Author(s)
  K. Iida, F. Mori, H. Watanabe, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama. T. Takagi. A. Bandoh
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High drain current and low loss normally-off-mode AIGaN/GaN junction HFETs with p-type GaN gate contact2007
- Author(s)
  T. Fujii, S. Nakamura, K. Mizuno, R. Nega, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Organizer
  Group 45 Japan Society for Promotion of Science No. 110 Meeting
- Year and Date
  2007-04-06
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Internal Quantum Efficiency of Al_xGa_<1-x>N (0<x<1) on AlN Template2007
- Author(s)
  N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani, Y. Yamada
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒素およびホウ素をドープした6H-SiCにおけるDAP発光の温度特性評価2007
- Author(s)
  村田諭是、柴田陽子、生田美奈、杉浦正明、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工大
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] High Drain Current and Low Loss Normally-Off Mode AlGaN/GaN Junction HFETs with p-Type GaN Gate2007
- Author(s)
  Takahiro Fujii, Shogo Nakamura, Katsutoshi Mizuno, Ryota Nega, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Organizer
  The 7th International Conference of Nitride Semiconductors,
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PROJECT-18760259
[Presentation] Critical Issue in Growing High Quality Thick AlGaN by High-Temperature MOVPE2007
- Author(s)
  N. Kato, T. Sumii, S. Sato, H. Sugimura, N. Okada, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. B andoh
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒素およびホウ素をドープした6H-SiCにおけるDAP発光の温度特性評価2007
- Author(s)
  村田諭是, 柴田陽子, 生田美奈, 杉浦正明, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] High temperature metalorganic vapor phase epitaxial growth of AlN and AlGaN for fabrication of high performance UV/DUV emitters2007
- Author(s)
  K. Balakrishnan, Kazuyoshi Iida, H. Watanabe, H. Amano, M. Iwaya, I. Akasaki
- Organizer
  17th International Vacuum Congress(IVC-17),
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒素およびホウ素をドープした6H-SiCのアニール効果2007
- Author(s)
  柴田陽子, 村田諭是, 生田美奈, 杉浦正明, 林啓二, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 新田州吾, 木下博之
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] Effect of sapphire mis-orientation on the growth of AlN by high temperature MOVPE2007
- Author(s)
  K. Nagamatsu, N. Okada, N. Kato, T. Sumii, A. Bando, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 紫外発光素子への期待とIII族窒化物半導体を用いた紫外発光素子の高性能化2007
- Author(s)
  天野浩, 岩谷素顕, 上山智, 赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High drain current and low loss normally-off-mode AlGaN/GaN junction HFETs with p-type GaN gate contact2007
- Author(s)
  T.Fujii, S.Nakamura, K.Mizuno, R.Nega, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
- Organizer
  The 7th International Conference on Nitride Semiconductors(ICNS-7)
- Place of Presentation
  Las Vegas,U.S.A
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Epitaxial lateral overgrowth of low dislocation density AlN by high temperature MOVPE and fabrication of UV optoelectronics devices2007
- Author(s)
  K. Nagamatsu, N. Okada, F. Mori, K. Iida, M. Imura, K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  The 13th Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High drain current and low loss normally-off-mode AlGaN/GaN junction HFETs with p-type GaN gate contact2007
- Author(s)
  T. Fujii, S. Nakamura, K. Mizuno, R. Nega, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Organizer
  The 7th International Conference on Nitride Semiconductors(ICNS-7)
- Place of Presentation
  Las Vegas, U. S. A
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] p型GaNゲートを用いたnormally-off型AlGaN/GaN HFETsの構造最適化2007
- Author(s)
  水野克俊, 藤井隆弘, 中村省吾, 根賀亮平, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18760259
[Presentation] High temperature MOVPE growth-a novel approach to grow high quality AlN layers2007
- Author(s)
  B. Krishnan, M. Imura, S. Satoh, H. Sugimura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  The 13th Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Microstructure of Threading Dislocations Caused by Grain Boundaries in AlN on Sapphire Substrate2007
- Author(s)
  M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Organizer
  The 7th International Conference of Nitride Semi conductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒素およびホウ素をドープした6H-SiCのアニール効果2007
- Author(s)
  柴田陽子、村田諭是、生田美奈、杉浦正明、林啓二、岩谷素顕、上山智、天野浩、赤崎勇、新田州後、木下博之
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工大
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] p型GaNゲートを用いたnormally-off型AlGaN/GaN HFETsの構造最適化2007
- Author(s)
  水野克俊、藤井隆弘、中村彰吾、根賀亮平、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Correlation between crystal qualities and electrical properties in Si-doped Al0.6Ga0.4N
- Author(s)
  Toshiki Yasuda, Syouta Katsuno, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Band Enginnering Considering Negative and Positive polarization Charges in UV-LEDs
- Author(s)
  Toshiki Yasuda, Kento Hayashi, Syouta Katsuno, Tsubasa Nakashima, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Nitride-based optoelectronic devices utilizing tunnel junctions
- Author(s)
  T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  2014 Lester Eastman Conference on High Performance Devices
- Place of Presentation
  Ithaca, USA
- Year and Date
  2014-08-05 – 2014-08-07
- Invited
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Laser lift-off technique for freestanding GaNsubstrate using an In droplet formed by thermaldecomposition of GaInN and its application to LED
- Author(s)
  Motoaki Iwaya, Daisuke Iida, Syunsuke Kawai, Nobuaki Ema, Takayoshi Tsuchiya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-14 – 2014-12-19
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Lattice relaxation process in GaInN/GaN heterostructure system as function of dislocation density in underlying GaN layer
- Author(s)
  Motoaki Iwaya, Koji Ishihara, Taiji Yamamoto, Daisuke Iida, Yasunari Kondo, Hiroyuki Matsubara, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  Workshop on Ultra-Precision Processing for Wide Band Gap Semiconductors
- Place of Presentation
  Bath, UK
- Year and Date
  2014-08-22 – 2014-08-24
- Invited
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Dislocation density dependence of the critical thickness in GaInN/GaN heterostructure
- Author(s)
  Taiji Yamamoto, Daisuke Iida, Yasunari Kondo, Mihoko Sowa, Hiroyuki Matsubara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  17th International Conference on Metalorganic Vapor Phase Epitaxy
- Place of Presentation
  Lausanne, Switzerland
- Year and Date
  2014-07-13 – 2014-07-18
- Invited
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Nitride-based light emitting diodes with buried tunnel junctions
- Author(s)
  M. Ino, Y. Kuwano,T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and ItsIndustrial Application '14
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Nitride-based tunnel junctions as an alternative hole injection
- Author(s)
  T. Takeuchi, M. Iwaya, S. Kamiyama, and I. Akasaki
- Organizer
  International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Invited
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] In-situ x-ray diffraction analysis for MOVPE growth of nitride semiconductors
- Author(s)
  Motoaki Iwaya, Taiji Yamamoto, Koji Ishihara, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  SPIE Photonics West
- Place of Presentation
  San Fransisco, USA
- Year and Date
  2015-02-07 – 2015-02-12
- Invited
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Nitride-Based Light Emitting Diodes with Buried Tunnel Junctions
- Author(s)
  M. Ino, Y. Kuwano, T. Morita, D. Minamikawa, T. Takeuchi, S. Kamiyama, M. Iwaya, and I. Akasaki
- Organizer
  Conference on LED and Its Industrial Application ’14
- Place of Presentation
  Yokohama
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Study of High-Reflective Ag-Based Electrode on p-Type GaN
- Author(s)
  S. Kawai, D. Iida, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
- Organizer
  Conference on LED and Its Industrial Application ’14
- Place of Presentation
  Yokohama
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] モスアイ加工サファイア基板を用いた窒化物系LEDの性能向上検討
- Author(s)
  曽和美保子, 北野司, 近藤俊行, 森みどり, 鈴木敦志, 難波江宏一,上山智, 岩谷素顕, 竹内哲也, 赤﨑勇
- Organizer
  応用物理学会 SC東海地区学術講演会2013
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Laser illuminations: Prospects of blue VCSELs
- Author(s)
  T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki
- Organizer
  LED Japan conference
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-10-15 – 2014-10-17
- Invited
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Optimization of growth condition of conductive AlGaN layer with high Al content
- Author(s)
  Toshiki Yasuda, Syouta Katsuno, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
- Organizer
  The 7th Asia-Pacific Workshop on Widegap Semicounductors
- Place of Presentation
  Seoul, Korea
- Year and Date
  2015-05-17 – 2015-05-20
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] AlN epitaxial growth on sapphire with an intermediate layer
- Author(s)
  Syouta Katsuno, Toshiki Yasuda, Motoaki Iwaya, Testuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Activation Energy of Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped AI0.05Ga0.95N
- Author(s)
  Motoaki Iwaya, Daisuke Iida, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  5th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Atlanta, USA
- Year and Date
  2014-05-18 – 2014-05-22
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] Electrical properties of GaNSb grown at low temperatures
- Author(s)
  K. Takarabe, D. Komori, K. Suzuki, T. Takeuchi, M. Iwaya, S. Kamiyama and I. Akasaki
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Demonstration of GaInN-based laser pumped by an electron beam
- Author(s)
  M. Iwaya, K. Kozaki, T. Yamada, T. Takeuchi, S. Kamiyama, I. Akasaki, Y. Honda, H. Amano, S. Iwayama, J. Matsuda, N. Matsubara, and T. Matsumoto
- Organizer
  International workshop on nitride semiconductors
- Place of Presentation
  ヴロツワフ/ポーランド
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Dislocation Density Dependence of Modal Gain in AlGaN/AlN Multiquantum Wells
- Author(s)
  Tomoaki Yamada, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  5th International Symposium on Growth of III-Nitrides
- Place of Presentation
  アトランタ/アメリカ
- Year and Date
  2014-05-18 – 2014-05-22
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Carrier gas dependence on GaNSb MOVPE growth
- Author(s)
  Daisuke Komori, Hiroki Sasajima, Kaku Takarabe, Kenta Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, and Isamu.Akasaki
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Activation Energy of Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped AI0.05Ga0.95N
- Author(s)
  Motoaki Iwaya, Daisuke Iida, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki
- Organizer
  5th International Symposium on Growth of III-Nitrides
- Place of Presentation
  アトランタ/アメリカ
- Year and Date
  2014-05-18 – 2014-05-22
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] スパッタ法AlNテンプレート基板を用いたAlNのHVPE成長
- Author(s)
  安井大貴、三宅秀人、平松和政、岩谷素顕、赤崎勇、天野浩
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Fabrication of Multi-junction GaInN-Based solar cell
- Author(s)
  Hironori Kurokawa, Mitsuru Kaga, Tomomi Goda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Organizer
  Compound Semiconductor Week 2014
- Place of Presentation
  Montpellier, France
- Year and Date
  2014-05-11 – 2014-05-15
- Data Source
  KAKENHI-PROJECT-24686003
[Presentation] An alternative hole injection: Nitride-based tunnel junctions
- Author(s)
  T. Takeuchi, D. Minamikawa, Y. Kuwano, M. Watanabe, M. Iwaya, S. Kamiyama, I. Akasaki
- Organizer
  International conference on metamaterials and nanophysics 2014
- Place of Presentation
  Varadero, Cuba
- Year and Date
  2014-04-22 – 2014-05-01
- Invited
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Nitride-based Tunnel Junctions towards deep UV-LEDs
- Author(s)
  髙須賀大貴,南川大智,井野匡貴,竹内哲也,岩谷素顕,上山智, 天野浩,赤﨑勇
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] MOVPE grouwth of AlNSb alloys
- Author(s)
  Kenta Suzuki, Daisuke Komori, Hiroki Sasajima, Kaku Takarabe, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-26286045
[Presentation] Investigation of hole injection in UV-LEDs utilizing polarization effect
- Author(s)
  Toshiki Yasuda, Kento Hayashi, Tsubasa Nakashima, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
- Organizer
  Conference on LED and ItsIndustrial Application '14
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-04-22 – 2014-04-24
- Data Source
  KAKENHI-PROJECT-26286045

1. KAMIYAMA Satoshi (10340291)

# of Collaborated Projects: 10 results

# of Collaborated Products: 630 results
2. TAKEUCHI Tetsuya (10583817)

# of Collaborated Projects: 8 results

# of Collaborated Products: 528 results
3. AMANO Hiroshi (60202694)

# of Collaborated Projects: 6 results

# of Collaborated Products: 218 results
4. Honda Yoshio (60362274)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
5. MIYAKE Hideto (70209881)

# of Collaborated Projects: 2 results

# of Collaborated Products: 10 results
6. 田中崇之 (10367120)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
7. 今井大地 (20739057)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
8. 亀井利浩 (90356824)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
9. DEKI Manato (80757386)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. OHNO Yutaka (10324451)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. NARITSUKA Shigeya (80282680)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. FUKUYAMA Hiroyuki (40252259)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. KATAYAMA RYUJI (40343115)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
14. 森田明理 (30264732)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 田中成泰 (70217032)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 松本貴裕 (10422742)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
17. 上向井正裕 (80362672)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
18. 宮嶋孝夫 (50734836)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
19. 石谷善博 (60291481)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 渡邉聡 (00292772)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 秋山亨 (40362363)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. MA BEI (90718420)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 正直花奈子

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
24. 佐々木直人

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

IWAYA MOTOAKI 岩谷 素顕

IWAYA Motoaki 岩谷 素顕

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Far-UV C AlGaN-based electron beam pumped laserPrincipal Investigator

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Electron beam excited nitride-based UV laserPrincipal Investigator

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Realization of phosphor free white LED for lightingPrincipal Investigator

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Innovative hybrid tandem-type white LEDPrincipal Investigator

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AlN系ナイトライドによる次世代小型・超高出力・高効率パワーデバイスPrincipal Investigator

IWAYA MOTOAKI 岩谷素顕

IWAYA Motoaki 岩谷素顕