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NAKAYAMA Takashi  中山 隆史

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Researcher Number 70189075
Other IDs
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Affiliation (based on the past Project Information) *help 2017 – 2022: 千葉大学, 大学院理学研究院, 教授
2016 – 2017: 千葉大学, 大学院理学研究科, 教授
2011 – 2015: 千葉大学, 理学(系)研究科(研究院), 教授
2014: 千葉大学, 理学研究科, 教授
2007 – 2010: Chiba University, Graduate School of Science, Professor … More
2007 – 2010: 千葉大学, 理学系研究科, 教授
2000 – 2009: Chiba University, Faculty of Science, Professor, 理学部, 教授
2003: Chiba University, Faculty of Science, Professor, 理学部, 助教授
1995 – 1999: 千葉大学, 理学部, 助教授
1998: Chiba University, Department of Physics, Associate Professor, Dr., 理学部, 助教授
1988 – 1995: 千葉大学, 理学部, 助手 Less
Review Section/Research Field
Principal Investigator
Condensed matter physics I / 固体物性Ⅰ(光物性・半導体・誘電体) / Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
Except Principal Investigator
固体物性Ⅰ(光物性・半導体・誘電体) / 物性一般(含基礎論) / Thin film/Surface and interfacial physical properties / Mathematical physics/Fundamental condensed matter physics / 固体物性Ⅱ(磁性・金属・低温) / Science and Engineering / Electron device/Electronic equipment … More / Condensed matter physics I / Thin film/Surface and interfacial physical properties / Science and Engineering / 物性一般(含極低温・固体物性に対する理論) Less
Keywords
Principal Investigator
第一原理計算 / 金属クラスター / 混晶化 / 原子空孔 / ショットキーバリア / 電子構造 / 半導体物性 / 計算物理 / 物性理論 / 表面・界面物性 … More / ギャップ状態 / 電場環境下 / dislocation / first-principles calculation / 極性反転 / 転位 / 空孔 / 積層欠陥 / アンチサイト / electronic structure / 電子状態 / ダングリングボンド / 反射率差スペクトル / 結晶成長 / クラスター / 金属/半導体界面 / 有機半導体 / 金属/半導体界面 / 拡散 / シリサイド / 界面 / 光学スペクトル / 直接・間接ギャップ半導体 / 半導体粒界 / 酸素空孔 / 量子井戸 / pn接合界面 / 原子拡散侵入 / エネルギー共鳴 / トンネル電流 / pn接合 / イオン拡散 / イオン価数 / 二酸化ケイ素 / ワイドギャップ半導体 / ドーパント / 有機固体 / 絶縁・半導体 / 金属電極 / 点欠陥 / 金属イオン / 侵入拡散 / イオン化 / 金属/固体界面 / charge transfer dynamics / amino acid / interface polarization / surface and interface / nonlocal response / optical response function / 偏光 / 荷電表面 / 光励起イオン化 / スペクトルの消滅 / 誘電関数 / 光学応答スペクトル / 垂直分極 / 量子摩擦 / 過渡電流 / 電荷中性理論 / ファンデアワールス結合 / 生体アミノ酸 / 電荷移動ダイナミクス / アミノ酸 / 界面分極 / 表面界面 / 非局所応答 / 光学応答関数 / surface-polarity conversion / interface mixing / defect core structure / molecular dynamics / stacking-fault tetrahedron / epitaxial growth / 融解消滅 / 電荷不整 / ヘテロエピタキシー / モンテカルロ・シミュレーション / 熱消滅 / ドーム構造 / 積層欠陥芯 / 窒化物半導体 / シリコン / 界面形成 / 表面極性反転 / 欠陥芯構造 / 分子動力学 / 積層欠陥四面体 / エピタキシャル成長 / optical anisotropy / heterovalent interface / stacking faults / antisite / crystal growth simulation / vacancy defect / first principles calculation / (110)表面・界面 / 初期成長層 / ヘテロエピ成長 / 空孔配列 / バンドベンティング / 価電子不整 / ダイマー / ダイクロライド / エッチング / 層状酸化 / モンテカルロシミュレーション / 光学異方性 / 空孔欠陥 / ヘテロバレント界面 / 結晶成長シミュレーション / optical transition / dangling bond / adsorption / reconstruction / reflectance difference spectra / interface / surface / crystal growth / 局所場効果 / 異族半導体界面 / ダイマー状態 / 再構成構造 / 光学変遷 / GaAs表面 / 光学遷移 / 吸着表面 / 再構成表面 / 半導体表面 / パイエルス転移 / 次元依存性 / ペンタセン / PTCDA / キャリア伝導 / 不純物散乱 / 相互作用 / 欠陥準位 / 励起子散乱 / 吸着構造 / 不純物分布 / 原子間相互作用 / 不純物欠陥 / 共有結合 / イオン結合 / 電場環境 / 巨大歪環境 / 有機分子固体 / 化合物化 / 界面制御 / 電場下イオン化 / 偏析界面層 / 有機分子半導体 / 混晶過程 / 金属誘起ギャップ状態 / 界面欠陥 / 構造安定性 / 原子拡散 / 界面ボンド分極 / 界面ボンド混成 / 析出 / オリゴアセン / InN界面 / 界面偏析 / 界面構造 / 格子間原子 / 強結合モデル / 界面欠陷 / ドーピング / 偏析 / 電荷中性準位 / 局在化 / 発光スペクトル / ド-ピング / 励起子構造 / 混晶半導体 / 歪超格子 / II-VI族半導体超格子 / バンドオフセット / 歪構造 / 半導体超格子 / 亜鉛化合物半導体 … More
Except Principal Investigator
第一原理計算 / 理論 / 反強磁性体 / 半導体 / 量子効果 / ラマン散乱 / 量子スピン系 / バンド構造 / 超格子 / 半導体量子構造 / スピンギャップ / 交換散乱機構 / 高温超伝導 / 半導体超格子 / ナノデバイス / ナノ物性 / 半導体デバイス / 界面 / ナノサイエンス / 三角格子 / 低次元系 / スピン波 / 量子反強磁性 / 電子状態 / レ-ザ / 多軌道タイトバインディング法 / IV族元素 / ナノリボン / スピン軌道相互作用 / タイトバインディング近似 / 物質合成 / 物質設計 / エッジ状態 / 物質創製 / 二次元物質 / スタネン / ゲルマネン / シリセン / Spin Gap / Spin Wave / Singlet Ground State / Bose-Condensation / Quantum Chaos / Jahn-Teller Distortion / Exchange-Scattering Spectra / Antiferromagnets / 低エネルギー励起 / 数値対角化 / シングレツト対 / スピンギギャップ / ボース凝縮 / ヤーンテラー歪 / 交換散乱スペクトル / シングレット基底 / ボース凝縮体 / 量子カオス / ヤーンテラー効果 / 磁気ラマンスペクトル / EXACT DIAGONALIZATION / REPRODUCTION OF SPECTRA / TRIPLET DIMERS / LADDER HEISENBERG SYSTEM / QUANTUM ANTIFERROMAGNETS / SINGLET GRIND STATE / MAGNETIC RAMAN SPECTRA / EXCHANGE SCATTERING / トリプレット対の励起 / シングレット基底状態 / 梯子構造反強磁性体 / 摂動論 / 数値対角化計算 / 量子スピン / はしご格子 / 磁気ラマン散乱 / Spin polarization / Exciton bifurcation / Charged exciton / Biexciton / High pressure and high magnetic field / Exciton magnetic polaron / Interface magnetism / Diluted magnetic semiconductor quantum structures / スピン緩和 / 縮退四光波混合 / スピン / 励起子分岐 / 荷電励起子 / 励起子分子 / 高圧強磁場 / 励起子磁気ポーラロン / 界面磁化 / 希薄磁性半導体量子井戸 / high pressure / chloride compound / fluoride compound / orbital ordering / 磁化率 / 高圧 / 強磁性的軌道整列 / 反強磁性的軌道整列 / 弗化物磁性体 / 塩化物磁性体 / 化物磁性体 / 軌道整列 / 高圧下磁性 / antiferro magnetic order / many-electreon states / copper oxides / optical properties / strong magnetic field / semiconductor superlattices / bound exciton / first principles / 膜厚依存性 / アルカリハライド超格子 / アルミニウム燐 / ガリウム燐 / 励起子 / 多重量子井戸構造 / 超伝導状態 / YBCO / 反強磁性秩序 / 多電子状態 / 銅酸化物高温超伝導体 / 光学特性 / 強磁場 / 束縛励起子 / impurity defect / first-principle calculation / relaxation dynamics / structural change / non-equilibrium material / metastable structure / defect reaction / electronic excitation / 不純物・欠陥 / 緩和ダイナミックス / 構造変化 / 非平衡物質 / 準安定構造 / 欠陥反応 / 電子励起 / N+N Meeting / Friendship / Mega-gauss Lab. / New Quantum Phenomena / Superconductors / Semiconductors / LDSD / COLLABOTRATION PROGRAMME / EPSRC-MONBUSHO / メソスコピック系 / 総括会議 / 量子ホール効果 / 磁気輸送現象 / 磁気光学 / 超強磁場 / 日英共同研究 / 酸化物超伝導体 / 磁気共鳴 / 動的応答 / スピングラス / シミュレーション / コンピュータ / スピン動力学 / 分子動力学法 / モデリング / 原子間力モデル / 電極反応 / 非平衡ダイナミクス / 熱伝導 / 第一原理分子動力学法 / シリコンデバイス / シリコン結晶 / ナノ電子物性科学 / 移動度 / ひずみ / シリコン / 電子輸送 / 電子デバイス / 電子物性 / 表面科学 / 不純物ドープ / シリコン結晶シリコンデバイス / 集積回路 / 局在スピン / 走査プローブ顕微鏡 / マイクロ派パルス伝導 / 走査ゲート顕微法(SGM) / 量子ポイントコンタクト(QPC) / マイクロ波パルス伝導 / 近藤効果 / 局在磁気モーメント(LMM) / 結合量子ポイントコンタクト / 走査ゲート顕微法 / スピン操作 / スピン生成 / 量子ポイントコンタクト / 界面準位 / 絶縁体 / 界面反応 / 金属 / 酸化物 / 将来デバイス / 炭素ナノチューブ / MOSトランジスタ / 新材料 / ナノ界面 / 磁気異方性 / マグノン / スピン系 / 反強磁性相関 / スピンの縮み / ボゴリューボフ変換 / 擬ポテンシャル法 / シリサイド / エネルギー勾配法 / 格子緩和 / 圧力誘起構造相転移 / アルカリ吸着 / 強磁性ニッケル / 自己相互作用補正 / 吸着構造 / 表面原子操作 / 稀土類鉄化合物 / 光学非線型感受率 / フルポテンシャルKKR法 / 超ソフト擬ポテンシャル法 / 第一原理的分子動力学法 / レーザ / 基底状態 / ハイゼンベルク型交換相互作用 / RVB / フリップ・フロップ数 / 量子ゆらぎ / 正方格子 / 原子層エピタキシ / ホットウォ-ルエピタキシ / 有機金属分子線エピタキシ / 分子線エピタキシ Less
  • Research Projects

    (32 results)
  • Research Products

    (325 results)
  • Co-Researchers

    (72 People)
  •  Theory of gap states at metal/semiconductor interfaces; annihilation mechanism and deformation in electric fieldsPrincipal Investigator

    • Principal Investigator
      NAKAYAMA Takashi
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
    • Research Institution
      Chiba University
  •  Theory of metal-atom ionization and diffusion around metal/solid interfaces in electric fieldsPrincipal Investigator

    • Principal Investigator
      Nakayama Takashi
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Condensed matter physics I
    • Research Institution
      Chiba University
  •  Synthesis of New Group IV Two Dimensional Materials

    • Principal Investigator
      Shiraishi Kenji
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Nagoya University
  •  Theory of impurity-atom defects in organic semiconductors based on by the first-principles calculationsPrincipal Investigator

    • Principal Investigator
      Nakayama Takashi
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Condensed matter physics I
    • Research Institution
      Chiba University
  •  Theory of atom diffusion and structural stability of metal/semiconductor interfaces: from inorganic to organic systemsPrincipal Investigator

    • Principal Investigator
      NAKAYAMA Takashi
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Condensed matter physics I
    • Research Institution
      Chiba University
  •  Studies on Structure Sampling and Non-Equilibrium Dynamics Using Ab-Initio Molecular Dynamics Methods

    • Principal Investigator
      TSUNEYUKI Shinji
    • Project Period (FY)
      2010 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  New Schottky-barrier theory responding to interface structuresPrincipal Investigator

    • Principal Investigator
      NAKAYAMA Takashi
    • Project Period (FY)
      2008 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Condensed matter physics I
    • Research Institution
      Chiba University
  •  Electron Spin Observation and Controlling in Quantum Point Contacts

    • Principal Investigator
      OCHIAI Yuichi
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Condensed matter physics I
    • Research Institution
      Chiba University
  •  Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals

    • Principal Investigator
      ENDOH Tetsuo
    • Project Period (FY)
      2007 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Tohoku University
  •  Theoretical Design of Nano-Device and Nano-Interface by First Principles Approach

    • Principal Investigator
      SHIRAISHI Kenji
    • Project Period (FY)
      2006 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      University of Tsukuba
  •  New development of the theories of nano-interfaces and their application to nano-devices

    • Principal Investigator
      SHIRAISHI Kenji
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      University of Tsukuba
  •  First-principles nonlocal optical response theory of semiconductor surfaces and interfaces with vertical polarizationPrincipal Investigator

    • Principal Investigator
      NAKAYAMA Takashi
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Condensed matter physics I
    • Research Institution
      Chiba University
  •  Calculation of Raman Spectra in Quantum Antiferromagnetic Systems containing Spin Gaps

    • Principal Investigator
      NATSUME Yuhei
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Mathematical physics/Fundamental condensed matter physics
    • Research Institution
      Chiba University
  •  First-principles theoretical study on formation dynamics, defect structures, and electronic structures of interface stacking faults during epitaxial growthPrincipal Investigator

    • Principal Investigator
      NAKAYAMA Takashi
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      固体物性Ⅰ(光物性・半導体・誘電体)
    • Research Institution
      Chiba University
  •  CALCULATION OF LIGHT SCATTERING SPECTRA RELATED TO LOW-ENERGY EXCITATION IN LOW-DIMENSIONAL QUANTUM ANTIFERROMAGENTICS SYSTEMS

    • Principal Investigator
      NATSUME Yuhei
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      物性一般(含基礎論)
    • Research Institution
      CHIBA UNIVERSITY
  •  Photon spin charge texture in nano-semiconductor physics

    • Principal Investigator
      TAKEYAMA Shojiro
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      固体物性Ⅰ(光物性・半導体・誘電体)
    • Research Institution
      Chiba University
  •  First principles calculation of growth dynamics and electronic properties of heterovalent burried-vacancy interfacesPrincipal Investigator

    • Principal Investigator
      NAKAYAMA Takashi
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      固体物性Ⅰ(光物性・半導体・誘電体)
    • Research Institution
      Chiba University
  •  低次元量子反強磁性系の磁気的低エネルギー励起とその光学的性質に関する理論計算

    • Principal Investigator
      夏目 雄平
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      物性一般(含基礎論)
    • Research Institution
      Chiba University
  •  ELECTRONIC STATES OF (GaP)m(AlP)n SHORT PERIOD SUPERLATTICES AND MULTI-QUANTUM WELL STRUCTURES AND THE MECHANISM OF PHOTOLUMINESCENCE

    • Principal Investigator
      KAMIMURA Hiroshi
    • Project Period (FY)
      1996 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      固体物性Ⅰ(光物性・半導体・誘電体)
    • Research Institution
      SCIENCE UNIVERSITY OF TOKYO
  •  Orbital ordering and magnetism of fluoride and chloride compounds at high pressures

    • Principal Investigator
      YAMADA Isao
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      固体物性Ⅱ(磁性・金属・低温)
    • Research Institution
      Chiba University
  •  First principles calculation of optical spectra of GaAs growing surface structuresPrincipal Investigator

    • Principal Investigator
      NAKAYAMA Takashi
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      固体物性Ⅰ(光物性・半導体・誘電体)
    • Research Institution
      Chiba University
  •  量子性の強い低次元反強磁性体のマグノン励起とそのラマン散乱に関する理論と数値計算

    • Principal Investigator
      夏目 雄平
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      物性一般(含基礎論)
    • Research Institution
      Chiba University
  •  Theoretical Study of Novel Structures of Materials by Electronic Excitation and Unified Model

    • Principal Investigator
      SHINOZUKA Yuzo
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      固体物性Ⅰ(光物性・半導体・誘電体)
    • Research Institution
      Yamaguchi University
  •  II-VI族混晶半導体歪超格子における青色発光スペクトルの機構に関する理論的研究Principal Investigator

    • Principal Investigator
      中山 隆史
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      固体物性Ⅰ(光物性・半導体・誘電体)
    • Research Institution
      Chiba University
  •  Low Dimensional Structures and Devices

    • Principal Investigator
      KAMIMURA Hiroshi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Institution
      Science University of Tokyo
  •  計算物理学-物性研究における新展開-A01第一原理からの物性予測

    • Principal Investigator
      塚田 捷
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  半導体量子構造の作製と新物性に関する研究

    • Principal Investigator
      藤田 茂夫
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  半導体量子構造の作製と新物性に関する研究

    • Principal Investigator
      藤田 茂夫
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  量子反強磁性正方格子基底状態の拡張型RVB描像とド-ブされたホ-ルの振舞の表現

    • Principal Investigator
      NATSUME Yuhei
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      物性一般(含極低温・固体物性に対する理論)
    • Research Institution
      Chiba University
  •  半導体量子構造の作製と新物性に関する研究

    • Principal Investigator
      藤田 茂夫
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  II-VI族化合物半導体超格子の電子構造と光学的性質の研究Principal Investigator

    • Principal Investigator
      中山 隆史
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Chiba University
  •  短距離相互作用スピングラス状態の動的応答現象に関する計算機シミュレーション

    • Principal Investigator
      夏目 雄平
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Institution
      Chiba University

All 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation Book Patent

  • [Book] Electronic processes in organic electronics: Bridging nanostructure, electronic states and device properties2015

    • Author(s)
      Y. Tomita, T. Nakayama
    • Total Pages
      427
    • Publisher
      Springer Japan
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Book] 次世代結晶性半導体におけるナノ成膜ダイナミックスと界面量子効果2013

    • Author(s)
      中山隆史
    • Publisher
      (株)NTS出版
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Book] "計算科学に基づく半導体ナノ界面構造と電子物性の評価", 「ポストシリコン半導体-ナノ成膜ダイナミックスと基板・界面効果」4編1章2節2013

    • Author(s)
      中山隆史, 小日向恭祐
    • Publisher
      (株)NTS出版
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Book] ポストシリコン半導体 --ナノ成膜ダイナミクスと基板・界面効果-- 第4編1章2節2013

    • Author(s)
      中山隆史、小日向恭祐
    • Total Pages
      10
    • Publisher
      NTS出版
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Book] Comprehensive Semiconductor Science and Technology(Eds.Mahajan, Kamimura, and Bhattacharya)(Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011

    • Author(s)
      T.Nakayama, Y.Kangawa, K.Shiraishi
    • Publisher
      Elsevier B.V.
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Book] Atomic Structures and Electronic Properties of Semiconductor Interfaces, in "Comprehensive Semiconductor Science and Technology"2011

    • Author(s)
      T.Nakayama
    • Publisher
      Elsevier B.V., Amsterdam
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Book] Comprehensive Semiconductor Science and Technology(Eds.Mahajan, Kamimura, and Bhattacharya Section 1.12)(Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011

    • Author(s)
      T.Nakayama, Y.Kangawa, K.Shiraishi
    • Publisher
      Elsevier B.V., Amsterdam
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Book] Comprehensive Semiconductor Science and Technology (Atomic Structures and Electronic Properties of Semiconductor Interfaces)2011

    • Author(s)
      T.Nakayama
    • Publisher
      Elsevier B.V, Amsterdam
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Book] "Atomic Structures and Electronic Properties of Semiconductor Interfaces", in "Comprehensive Semiconductor Science and Technology", Eds. Mahajan, Kamimura, and Bhattacharya2011

    • Author(s)
      T. Nakayama, Y. Kangawa, K. Shiraishi
    • Publisher
      Elsevier B.V.
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Book] Comprehensive Semiconductor Science and Technology2011

    • Author(s)
      T. Nakayama
    • Publisher
      Elsevier B.V., Amsterdam
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Book] The Oxford Handbook of Nanoscience and Technology(Eds.Narlikar and Fu)(Role of computational science in Si nanotechnologies and devices)2010

    • Author(s)
      K.Shiraishi, T.Nakayama
    • Publisher
      Oxford University Press
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Book] The Oxford Handbook of Nanoscience and Technology(Eds.Narlikar and Fu, Vol.III)(Role of computational science in Si nanotechnologies and devices)2010

    • Author(s)
      K.Shiraishi, T.Nakayama
    • Publisher
      Oxford University Press
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Book] 物理学ハンドブック(章:量子物性-代表物質のバンド構造-)2006

    • Author(s)
      中山隆史(分担執筆)
    • Publisher
      朝倉書店
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Book] 「表面・界面工学大系 基礎編」 第8章第1節 界面の電子状態2005

    • Author(s)
      中山隆史(本多健一他編)
    • Publisher
      フジ・テクノシステム社
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Photo-carrier induced composition separation in mixed-halide CsPb(I<sub>x</sub>Br<sub>1-x</sub>)<sub>3</sub> perovskite semiconductors; first-principles calculation2023

    • Author(s)
      Tomita Ami、Nakayama Takashi
    • Journal Title

      Applied Physics Express

      Volume: 16 Issue: 4 Pages: 041002-041002

    • DOI

      10.35848/1882-0786/acc6b3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Journal Article] Clustering feature of metal atoms in pentacene molecular solids: a first-principles study2022

    • Author(s)
      S. Watanabe, Y. Tomita, K. Kawabata, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 61 Issue: 2 Pages: 021003-021003

    • DOI

      10.35848/1347-4065/ac41e2

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Journal Article] Enhancement of tunneling currents by isoelectronic nitrogen-atom doping at semiconductor pn junctions; comparison of indirect and direct band-gap systems2022

    • Author(s)
      Cho Sanghun、Nakayama Takashi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 61 Issue: 12 Pages: 124002-124002

    • DOI

      10.35848/1347-4065/ac9fb0

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Journal Article] Effect of electron transfer on metal-atom penetration into SiO2 in electric field: First-principles study2021

    • Author(s)
      R. Nagasawa, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 60 Issue: 3 Pages: 031005-031005

    • DOI

      10.35848/1347-4065/abe0f4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Journal Article] New types of resonant tunneling currents at Si-p/n junctions: One-dimensional model calculation2021

    • Author(s)
      S. Cho, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 60 Issue: 5 Pages: 054002-054002

    • DOI

      10.35848/1347-4065/abf782

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Journal Article] Electronic structures and impurity segregation around extended defects in pentacene films: first-principles study2021

    • Author(s)
      S. Watanabe, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 60 Issue: SB Pages: SBBG05-SBBG05

    • DOI

      10.35848/1347-4065/abdf71

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Journal Article] Impacts of terminal molecules on metal-atom diffusion into alkane self-assembled-monolayer films: first-principles study2021

    • Author(s)
      S. Watanabe, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 60 Issue: 12 Pages: 125505-125505

    • DOI

      10.35848/1347-4065/ac3181

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Journal Article] Theoretical studies on the switching mechanism of VMCO memories2019

    • Author(s)
      T. Nakanishi, K. Chokawa, M. Araidai, T. Nakayama, K. Shiraishi
    • Journal Title

      Microelectronic Engineering

      Volume: 215 Pages: 110997-110997

    • DOI

      10.1016/j.mee.2019.110997

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Origin of Fermi-level depinning at TiN/Ge(001) interfaces: first-principles study2019

    • Author(s)
      T. Nishimoto, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 6 Pages: 061007-061007

    • DOI

      10.7567/1347-4065/ab1c6d

    • NAID

      210000155856

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Resonance-enhanced tunneling current through Si-p/n junction with additional dopants; theoretical study2019

    • Author(s)
      S. Cho, S. Iizuka, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 6 Pages: 061004-061004

    • DOI

      10.7567/1347-4065/ab1717

    • NAID

      210000155673

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Origin of Fermi-level depinning at metal/Ge interfaces: first-principles study on effect of segregation2019

    • Author(s)
      T. Nishimoto, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 印刷中

    • NAID

      210000156461

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Effect of electric field on formation energies of point defects around metal/SiC and metal/GaN interfaces: First-principles study2019

    • Author(s)
      R. Nagasawa, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 9 Pages: 091006-091006

    • DOI

      10.7567/1347-4065/ab3839

    • NAID

      210000156878

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Metal-atom penetration and diffusion in organic solids: difference between σ- and π- orbital molecular systems2019

    • Author(s)
      S. Watanabe, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 印刷中

    • NAID

      210000156689

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Structural and Charging Stability of Metal Nanodot Memory in SiO2; First-Principles Study2018

    • Author(s)
      T. Nakayama, S. Yamazaki, Y. Shiraishi
    • Journal Title

      ECS Transactions

      Volume: 86 Issue: 2 Pages: 69-75

    • DOI

      10.1149/08602.0069ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] First-principles study of giant thermoelectric power in incommensurate TlInSe22018

    • Author(s)
      Ishikawa M.、Nakayama T.、Wakita K.、Shim Y. G.、Mamedov N.
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 16

    • DOI

      10.1063/1.5011337

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K05993, KAKENHI-PROJECT-17K05488, KAKENHI-PROJECT-17K06357
  • [Journal Article] Acceleration of metal-atom diffusion under electric field at metal/insulator interfaces: First principles study2018

    • Author(s)
      R.Nagasawa, Y.Asayama, T.Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4S Pages: 04FB05-04FB05

    • DOI

      10.7567/jjap.57.04fb05

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Physics of Fermi-Level "Unpinning" at Metal/Ge Interfaces; First-Principles View2018

    • Author(s)
      T. Nakayama, T. Nishimoto
    • Journal Title

      ECS Transactions

      Volume: 86 Issue: 7 Pages: 291-298

    • DOI

      10.1149/08607.0291ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology2017

    • Author(s)
      T. Mori, S. Iizuka, T. Nakayama
    • Journal Title

      MRS communications

      Volume: 7 Issue: 3 Pages: 541-550

    • DOI

      10.1557/mrc.2017.63

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-17K05488, KAKENHI-PROJECT-15H05526
  • [Journal Article] Metal-atom interactions and clustering in organic semiconductor systems2017

    • Author(s)
      Y. Tomita, T. Park, T. Nakayama
    • Journal Title

      J. Electronic Materials

      Volume: 印刷中 Issue: 7 Pages: 3927-3932

    • DOI

      10.1007/s11664-016-5090-4

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] Ionization and diffusion of metal atoms under electric field at metal/insulator interfaces; First-principles study2017

    • Author(s)
      Y. Asayama, M. Hiyama, T. Nakayama
    • Journal Title

      Materials Science in Semiconductor Processng

      Volume: 印刷中 Pages: 78-82

    • DOI

      10.1016/j.mssp.2016.09.010

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] Metal-atom Ionization and Diffusion under Electric Field around Metal/insulator Interfaces; First-principles View (invited paper)2017

    • Author(s)
      T. Nakayama, Y. Asayama, R. Nagasawa
    • Journal Title

      ECS Transactions

      Volume: 80 Issue: 1 Pages: 285-293

    • DOI

      10.1149/08001.0285ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Journal Article] Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study2017

    • Author(s)
      S.Iizuka, Y.Asayama, T.Nakayama
    • Journal Title

      Mater. Sci. Semicond. Processing

      Volume: 印刷中 Pages: 279-282

    • DOI

      10.1016/j.mssp.2016.11.031

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] Defect distribution and Schottky barrier at metal/Ge interfaces: Role of metal-induced gap states2016

    • Author(s)
      S. Sasaki, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 11 Pages: 111302-111302

    • DOI

      10.7567/jjap.55.111302

    • NAID

      210000147222

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] Quantum process of exciton dissociation at organic semiconductor interfaces; Effects of interface roughness and hot exciton2016

    • Author(s)
      H. Iizuka, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 2 Pages: 021601-021601

    • DOI

      10.7567/jjap.55.021601

    • NAID

      210000146019

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] Fundamental processes of exciton scattering at organic solar-cell interfaces: One-dimensional model calculation2016

    • Author(s)
      Y. Masugata, H. Iizuka, K. Sato, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 8 Pages: 081601-081601

    • DOI

      10.7567/jjap.55.081601

    • NAID

      210000146929

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] Physics of Metal/Ge Interfaces; Interface Defects and Fermi-Level Depinning2016

    • Author(s)
      T. Nakayama, S. Sasaki, Y. Asayama
    • Journal Title

      ECS trans

      Volume: 75 Pages: 643-650

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] Stability and electronic structures of isoelectronic impurity complexes in Si: First-principles study2016

    • Author(s)
      S. Iizuka, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 10 Pages: 101301-101301

    • DOI

      10.7567/jjap.55.101301

    • NAID

      210000147118

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] Tunneling Desorption of Atomic Hydrogen on the Surface of Titanium Dioxide2015

    • Author(s)
      T. Minato, S. Kajita, C-L. Pang, N. Asao, Y. Yamamoto, T. Nakayama, M. Kawai, and Y. Kim
    • Journal Title

      ACS Nano.

      Volume: 9 Issue: 7 Pages: 6837-6842

    • DOI

      10.1021/acsnano.5b01607

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26400310, KAKENHI-PROJECT-15H02025, KAKENHI-PROJECT-25286012
  • [Journal Article] First-Principles Calculation of Electronic Properties of Isoelectronic Impurity Complexes in Si2015

    • Author(s)
      S. Iizuka, T. Nakayama
    • Journal Title

      Appl. Phys. Express

      Volume: 8 Issue: 8 Pages: 081301-081301

    • DOI

      10.7567/apex.8.081301

    • NAID

      210000137599

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] First-principles study of doping properties in ZnSnAs22015

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      phys. stat. sol. (c)

      Volume: 印刷中 Issue: 6 Pages: 814-817

    • DOI

      10.1002/pssc.201400277

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Journal Article] First-Principles Study of Schottky Barrier Behavior at Fe3Si/Ge(111) Interfaces2014

    • Author(s)
      K. Kobinata, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 53 Issue: 3 Pages: 035701-035701

    • DOI

      10.7567/jjap.53.035701

    • NAID

      210000143441

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] First-principles evaluation of penetration energy of metal atom into Si substrate2014

    • Author(s)
      T. Hiramatsu, T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 53 Issue: 5 Pages: 058006-058006

    • DOI

      10.7567/jjap.53.058006

    • NAID

      210000143765

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] First-principles theoretical study of optical properties of oxygen-doped II-VI semiconductors2014

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Phys. Status Solidi C

      Volume: 印刷中 Issue: 7-8 Pages: 1229-1232

    • DOI

      10.1002/pssc.201300557

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] First-principles study of Pt-film stability on doped graphene sheets2014

    • Author(s)
      T. Park, Y. Tomita, T. Nakayama
    • Journal Title

      Surf. Sci.

      Volume: 621 Pages: 7-15

    • DOI

      10.1016/j.susc.2013.10.011

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] First-principles evaluation of penetration energy of metal atom into Si substrate2014

    • Author(s)
      T. Hiramatsu, T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 印刷中

    • NAID

      210000143765

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach2013

    • Author(s)
      Y. Kangawa, T. Akiyama, T. Ito, K. Shiraishi, T. Nakayama
    • Journal Title

      Materials 2013

      Volume: 6 Issue: 8 Pages: 3309-3361

    • DOI

      10.3390/ma6083309

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361, KAKENHI-PROJECT-24560025
  • [Journal Article] First-principles study of oxygen-doping states in II-VI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Physica Stat. Sol

      Volume: 10 Issue: 11 Pages: 1385-1388

    • DOI

      10.1002/pssc.201300249

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] Energetics and electron states of Au/Ag incorporated into crystalline/amorphous silicon2013

    • Author(s)
      M. Y. Yang, K. Kamiya, T. Yamauchi, T. Nakayama, K. Shiraishi
    • Journal Title

      J. Appl. Phys

      Volume: 114 Issue: 6

    • DOI

      10.1063/1.4817432

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study2012

    • Author(s)
      T. Nakayama
    • Journal Title

      Thin Solid Films

      Volume: 520 Pages: 3374-3378

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] First-principles Calculations of Metal-atom Diffusion in Oligoacene Molecular Semiconductor Systems2012

    • Author(s)
      Y. Tomita, T. Nakayama
    • Journal Title

      Organic Electr

      Volume: 13 Issue: 9 Pages: 1487-1498

    • DOI

      10.1016/j.orgel.2012.04.019

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] Theoretical study of Si-based ionic switch2012

    • Author(s)
      T. Yamauchi, M. Y. Yang, K. Kamiya, K. Shiraishi, T. Nakayama
    • Journal Title

      Appl. Phys. Lett

      Volume: 100 Issue: 20

    • DOI

      10.1063/1.4718758

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] 表面界面の光学応答スペクトル2011

    • Author(s)
      中山隆史
    • Journal Title

      真空

      Volume: 54 Pages: 529-536

    • NAID

      10029840009

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] N-doping induced band-gap reduction in III-V semiconductors : First-principles calculations2011

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Journal Title

      Phys. Stat. Sol. C

      Volume: 8 Pages: 352-355

    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] Optical Response Spectra of Surfaces and Interfaces2011

    • Author(s)
      T. Nakayama
    • Journal Title

      J. Vac.Soc.Jpn

      Volume: 54 Issue: 8 Pages: 529-536

    • DOI

      10.1016/j.tsf.2011.10.091

    • NAID

      10029840009

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] Optical Response Spectra of Surfaces and Interfaces2011

    • Author(s)
      T. Nakayama, K. Kobinata
    • Journal Title

      Journal of the Vacuum Society of Japan

      Volume: 54 Issue: 10 Pages: 529-536

    • DOI

      10.3131/jvsj2.54.529

    • NAID

      130002116993

    • ISSN
      1882-2398, 1882-4749
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Journal Article] Firstprinciples study on Nitrogen-induced band-gap reduction in III-V semi conductors2010

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Journal Title

      Physics Procedia 3

      Pages: 1363-1366

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First Principles Study2010

    • Author(s)
      T.Nakayama, Y.Maruta, K.Kobinara
    • Journal Title

      ECS Trans 33

      Pages: 913-919

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010

    • Author(s)
      T.Nakayama
    • Journal Title

      ECS Transaction

      Volume: 33 Pages: 913-919

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Van der Waals Interactions for Isolated Systems Calculated Using Density Functional Theory within Plasmon-Pole Approx-imation2010

    • Author(s)
      Y.Ono, K.Kusakabe, T.Nakayama
    • Journal Title

      J.Phys.Soc.Jpn. 79

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Metal-Atom Diffusion in Organic Solids : First-Principles Study of Graphene and Polyacetylene Syatems2010

    • Author(s)
      Y.Tomita, T.Nakayama
    • Journal Title

      Appl.Phys.Express 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010

    • Author(s)
      T.Nakayama, Y.Maruta, K.Kobinara
    • Journal Title

      ECS Trans Vol.33, No.10

      Pages: 1-7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Chemical Trend of Schottky-Barrier Change by Segregation Layers at Metal/Si Interfaces : First-Principles Study2010

    • Author(s)
      T.Nakayama
    • Journal Title

      ECS Trans.

      Volume: 33 Pages: 913-919

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Stability and Schottky barrier of silicides: First-principles study2009

    • Author(s)
      T.Nakayama, S.Sotome, S.Shinji
    • Journal Title

      Micro electronics Eng. 86

      Pages: 1718-1721

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Firstprinciples study on band-gap reduction in GaN/GaSb superlattices2009

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Journal Title

      Micro electronics J 40

      Pages: 824-826

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] First-principles Study of Schottky-Barrier Behavior at Metal/InN Interfaces2009

    • Author(s)
      Y.Takei, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 48

    • NAID

      40016704628

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama
    • Journal Title

      Microelectronic Engineering 86

      Pages: 1718-1721

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation2009

    • Author(s)
      Y. Tomita, T. Nakayama, H. Ishii
    • Journal Title

      e-J.Surf.Sci.Nanotech. Vol.7

      Pages: 606-616

    • NAID

      130004439158

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19204030
  • [Journal Article] Transient current behavior through molecular bridge systems; effects of intra-molecule current on quantum relaxation and oscillation2009

    • Author(s)
      Y. Tomita, T. Nakayama, H. Ishii
    • Journal Title

      e-J. Surf. Sci. Nanotech. 7

      Pages: 606-616

    • NAID

      130004439158

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] Stability and Schottky barrier of silicides : Firstprinciples study2009

    • Author(s)
      T.Nakayama, S.Sotome, S.Shinji
    • Journal Title

      Microelectronic Engineering 86

      Pages: 1718-1721

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Transient current behavior through molecular bridge systems ; effects of intra-molecule current on quantum relaxation and oscillation2009

    • Author(s)
      Y.Tomita, T.Nakayama, H.Ishii
    • Journal Title

      eJ.Surf.Sci.Nanotech. 7

      Pages: 606-616

    • NAID

      130004439158

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Electron carrier generation at edge dislocations in InN films; First-principles study2009

    • Author(s)
      Y.Takei, T.Nakayama
    • Journal Title

      J.Cryst.Growth 311

      Pages: 2767-2771

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama
    • Journal Title

      Microelectronic Eng 86

      Pages: 1718-1721

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] Stability and Schottky barrier of silicides: First-principles study2009

    • Author(s)
      T. Nakayama, S. Sotome, S. Shinji
    • Journal Title

      Microelectronic Eng. 86

      Pages: 1718-1721

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] Why and How Atom Intermixing Proceeds at Metal/Si Interfaces; Silicide Formation vs. Random Mixing2008

    • Author(s)
      T. Nakayama
    • Journal Title

      ECS Transaction 16

      Pages: 787-795

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Energy-level alignment, ionization, and stability of bio-amino acids at amino-acid/Si junctions2008

    • Author(s)
      M.Oda, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 47

      Pages: 3712-3718

    • NAID

      40016057275

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Relaxation Process of Transient Current through Nanoscale Systems ; Density Matrix Calculations2008

    • Author(s)
      H. Ishii, Y. Tomita, Y. Shigeno, T. Nakayama
    • Journal Title

      e-J.Surf.Sci.Nanotech. Vol.6

      Pages: 213-221

    • NAID

      130004933990

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19204030
  • [Journal Article] Why and How Atom Intermixing Proceeds at Metal/Si Interfaces ; Silicide Formation vs. Random Mixing2008

    • Author(s)
      T.Nakayama, S.Shinji, S.Sotome
    • Journal Title

      ECS Trans Vol.16, No.10(招待講演論文)

      Pages: 787-795

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] Relaxation Process of Transient Current through Nanoscale Systems ; Density Matrix Calculations2008

    • Author(s)
      H.Ishii, Y.Tomita, Y.Shigeno, T.Nakayama
    • Journal Title

      eJ.Surf.Sci.Nanotech. 6

      Pages: 213-221

    • NAID

      130004933990

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] 金属/絶縁体界面の統一理論2008

    • Author(s)
      白石賢二、中山隆史
    • Journal Title

      表面科学 29

      Pages: 92-98

    • NAID

      10021165483

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360017
  • [Journal Article] Atomic and electronic structures of stair-rod dislocations in Si and GaAs2008

    • Author(s)
      R.Kobayashi, T.Nakayama
    • Journal Title

      Jpn.J.Appl.Phys. 47

      Pages: 4417-4421

    • NAID

      40016110952

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Journal Article] 金属/絶縁体界面の物理:ショットキーバリアと原子間混晶化2007

    • Author(s)
      中山隆史、白石賢二
    • Journal Title

      表面科学 28

      Pages: 28-33

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] Surface strain and hexagonal/cubic polymorphism in InGaN epitaxy: first-principles study2007

    • Author(s)
      T. Nakayama, et. al.
    • Journal Title

      phys. stat. sol. (c) 4

      Pages: 299-302

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] 金属/絶縁体界面の物理:ショットキーバリアと原子混晶化2007

    • Author(s)
      中山隆史
    • Journal Title

      表面科学 28

      Pages: 28-33

    • NAID

      10018461516

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Surface strain and hexagonal/cubic polymorphism in InGaN epitaxy: first-principles study2007

    • Author(s)
      T. Nakayama
    • Journal Title

      phys. stat. sol. (c) 4

      Pages: 299-302

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Physics of metal/high-k interfaces: Schottky barriers and atom intermixing (in Japanese)2007

    • Author(s)
      T. Nakayama, et. al.
    • Journal Title

      Hyoumenkagaku 28

      Pages: 28-33

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Surface strain and hexagonal/cubic polymorphism in InGaN epitaxy : first-principles study2007

    • Author(s)
      T.Nakayama
    • Journal Title

      phys. stat. sol. (C) 4巻

      Pages: 299-302

    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Handbook of Physics (Chapter Quantum properties -Band structures of representative materials-, in Japanese)2006

    • Author(s)
      T. Nakayama, et. al. (partial contributor)
    • Journal Title

      Asakura Publisher Tokyo

      Pages: 315-321

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006

    • Author(s)
      T. Nakayama
    • Journal Title

      J. Phys. Conf. Ser. 38

      Pages: 216-219

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures - Remarkable Advantages of La_2O_3 over HfO_2 -2006

    • Author(s)
      K.Ohmori, P.Ahmet, K.Shiraishi, K.Yamabe, H.Watanabe, Y.Akasaka, N.Umezawa, K.Nakajima, M.Yoshitake, T.Nakayama, K.-S.Chang, K.Kakushima, Y.Nara, M.L.Green, H.Iwai, K.Yamada, T.Chikyow
    • Journal Title

      ECS Transactions 3(3)

      Pages: 351-351

    • Data Source
      KAKENHI-PROJECT-18360017
  • [Journal Article] Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy2006

    • Author(s)
      R.Kobayashi, T.Nakayama
    • Journal Title

      Thin Solid Films 508

      Pages: 29-29

    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006

    • Author(s)
      T.Nakayama
    • Journal Title

      J. Phys. Conf. Ser. 38巻

      Pages: 216-219

    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006

    • Author(s)
      T.Nakayama, S.Itaya, D.Murayama
    • Journal Title

      J.Phys.Conf.Ser. 38

      Pages: 216-216

    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces -2006

    • Author(s)
      K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
    • Journal Title

      ECS Transactions 2(1)

      Pages: 25-25

    • Data Source
      KAKENHI-PROJECT-18360017
  • [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006

    • Author(s)
      T.Nakayama, S.Itaya, D.Murayama
    • Journal Title

      J. Phys. Conf. Ser. 38

      Pages: 216-216

    • Data Source
      KAKENHI-PROJECT-18360017
  • [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006

    • Author(s)
      T. Nakayama, S. Itaya, D. Murayama
    • Journal Title

      J. Phys. Conf. Ser. 38

      Pages: 216-219

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] Physics of Metal/High-k Interfaces2006

    • Author(s)
      T.Nakayama, K.Shiraishi, S.Miyazaki, Y.Akasaka, T.Nakaoka, K.Torii, A.Ohta, P.Ahmet, K.Ohmori, N.Umezawa, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
    • Journal Title

      ECS Transactions 3(3)

      Pages: 129-129

    • Data Source
      KAKENHI-PROJECT-18360017
  • [Journal Article] New Theory of Effective Work Functions at Metal/High-k Dielectric Interfaces-Application to Metal/High-k HfO_2 And La_2O_3 Dielectric Interfaces-2006

    • Author(s)
      K.Shiraishi, T.Nakayama, Y.Akasaka, S.Miyazaki, T.Nakaoka, K.Ohmori, P.Ahmet, K.Torii, H.Watanabe, T.Chikyow, Y.Nara, H.Iwai, K.Yamada
    • Journal Title

      ECS Transactions 2(1)

      Pages: 25-25

    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] Physics of Metal/High-k interfaces2006

    • Author(s)
      T.Nakayama
    • Journal Title

      ECS transactions 3巻

      Pages: 129-140

    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] THEORETICAL STUDIES ON THE PHYSICAL PROPERTIES OF POLY-SI AND METAL GATES/HfO_2 RELATED HIGH-K DIELECTRICS INTERFACES2006

    • Author(s)
      K.Shiraishi, K.Torii, Y.Akasaka, T.Nakayama, T.Nakaoka, S.Miyazaki, T.Chikyow, K.Yamada, Yasuo Nara
    • Journal Title

      ECS Transactions 1(5)

      Pages: 479-479

    • Data Source
      KAKENHI-PROJECT-18360017
  • [Journal Article] Thernal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy2006

    • Author(s)
      R.Kobayashi, T.Nakayama
    • Journal Title

      Thin Solid Films 508

      Pages: 29-29

    • Data Source
      KAKENHI-PROJECT-18360017
  • [Journal Article] Physics of Metal/High-k Interfaces2006

    • Author(s)
      T. Nakayama, et. al.
    • Journal Title

      ECS transactions 3

      Pages: 129-140

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Physics of Metal/High-k Interfaces2006

    • Author(s)
      T. Nakayama
    • Journal Title

      ECS transactions 3

      Pages: 129-140

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy2006

    • Author(s)
      R. Kobayashi, T. Nakayama
    • Journal Title

      Thin Solid Films 508

      Pages: 29-32

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Journal Article] Nano-scale view of atom intermixing at metal/semiconductor interfaces2006

    • Author(s)
      T. Nakayama, et. al.
    • Journal Title

      J. Phys. Conf. Ser 38

      Pages: 216-219

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Electronic structures of natural quantum-dot system ; Si stacking-fault tetrahedron2005

    • Author(s)
      T.Nakayama
    • Journal Title

      phys.stat.sol.(c) 2巻

      Pages: 3125-3128

    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Ultrathin metal layers to convert surface polarity of nitride semiconductors2005

    • Author(s)
      T. Nakayama
    • Journal Title

      phys. stat. sol. (b) 242

      Pages: 1209-1213

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Electronic structures of natural quantum-dot system; Si stacking-fault tetrahedron2005

    • Author(s)
      T. Nakayama
    • Journal Title

      phys. stat. sol. (c) 2

      Pages: 3125-3128

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Electronic structures of natural quantum-dot system; Si stacking-fault tetrahedron2005

    • Author(s)
      T. Nakayama, et. al.
    • Journal Title

      phys. stat. sol. (c) 2

      Pages: 3125-3128

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Journal Article] Ultrathin metal layers to convert surface polarity of nitride semiconductors2005

    • Author(s)
      T. Nakayama, et. al.
    • Journal Title

      phys. stat. sol. (b) 242

      Pages: 1209-1213

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Patent] トンネル電流駆動素子(トンネル電界効果ラジスタ及びその製造方法)2022

    • Inventor(s)
      加藤公彦, 森貴洋, 飯塚将太, 中山隆史, 趙祥勲
    • Industrial Property Rights Holder
      加藤公彦, 森貴洋, 飯塚将太, 中山隆史, 趙祥勲
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2022-019819
    • Filing Date
      2022
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Patent] 半導体素子、半導体集積回路及び半導体素子の製造方法2021

    • Inventor(s)
      加藤, 森, 飯塚, 中山隆史, 趙, 加藤
    • Industrial Property Rights Holder
      加藤, 森, 飯塚, 中山隆史, 趙, 加藤
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2021-063816
    • Filing Date
      2021
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Si-pn接合中のSiGe量子井戸の共鳴準位によるトンネル電流の増大2023

    • Author(s)
      趙祥勲, 中山隆史
    • Organizer
      第28回電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の 物理― (EDIT 28)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] ハライド混晶ペロブスカイト半導体 CsPb(IxBr1-x)3 の光誘起相分離: 第一原理計算による検討2023

    • Author(s)
      冨田愛美, 中山隆史
    • Organizer
      第28回電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の 物理― (EDIT 28)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Resonance-enhanced tunneling currents at quantum-well-embedded Si-pn junctions2022

    • Author(s)
      S. Cho, T. Nakayama
    • Organizer
      20th Int. Symp. on the Physics of Semiconductors and Applications (ISPSA 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] ハライド混晶ペロブスカイトCsPb(I_xBr_(1-x))_3の安定性:第一原理計算による検討2022

    • Author(s)
      冨田愛美, 中山隆史
    • Organizer
      第69回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Resonance enhanced tunneling currents at Si-pn junctions; theoretical study2022

    • Author(s)
      Takashi Nakayama
    • Organizer
      19th Conf. on Gettering and Defect Engineering in Semiconductor Technology (GADEST-19)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 酸素空孔の帯電が誘起する金属酸化物の構造変化:第一原理計算による検討2022

    • Author(s)
      新井千慧, 中山隆史
    • Organizer
      第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] First-principles Theoretical Study on Photo-induced Composition Separation of Mixed-halide Perovskites CsPb(IxBr1-x)3 for Solar-cell Application2022

    • Author(s)
      A. Tomita, T. Nakayama
    • Organizer
      2022 Int. Conf. on Solid State Devices and Materials (SSDM 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Stability and optical properties of low-dimensional perovskite CsnPbXn+2 semiconductors; First-principles study2022

    • Author(s)
      A. Tomita, T. Nakayama
    • Organizer
      20th Int. Symp. on the Physics of Semiconductors and Applications (ISPSA 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] HfO2強誘電相の安定化:第一原理計算に基づく考察 (招待講演)2022

    • Author(s)
      中山隆史
    • Organizer
      第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 強誘電HfO2薄膜の安定性と誘電特性:第一原理計算による検討2022

    • Author(s)
      牧芳和, 新井千慧, 洗平昌晃, 白石賢二, 中山隆史
    • Organizer
      第69回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 太陽電池系ペロブスカイト混晶半導体における光誘起組成分離: 第一原理計算に基づく理論2022

    • Author(s)
      中山隆史
    • Organizer
      2022年度多元系化合物・太陽電池研究会 年末講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] HfO2薄膜の安定性と誘電特性:第一原理計算による検討2022

    • Author(s)
      牧芳和, 新井千慧, 中山隆史
    • Organizer
      第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 単純金属/Ge界面のフェルミレベル・デピニング:第一原理計算による検討2022

    • Author(s)
      西本瑛, 植田夏葉, 中山隆史
    • Organizer
      第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Formation and Optical Properties of Perovskite Semiconductor Nanodots; First-principles Theoretical Study2022

    • Author(s)
      T. Nakayama, A. Tomita
    • Organizer
      9th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-IX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 半導体のpn接合における点欠陥・不純物を介したトンネル電流の理論的検討2022

    • Author(s)
      加藤珠良偉, 趙祥勲, 中山隆史
    • Organizer
      第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 低次元薄膜半導体のpn接合におけるトンネル電流の振る舞い:その理論的検討2022

    • Author(s)
      趙祥勲, 飯塚将太, 中山隆史
    • Organizer
      第27回電子デバイス界面テクノロジー研究会 (EDIT 2022)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Si-pn 接合中の SiGe 量子井戸の共鳴準位によるトンネル電流の増大2022

    • Author(s)
      趙祥勲, 加藤公彦, 飯塚将太, 森貴洋, 中山隆史
    • Organizer
      第69回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 金属酸化物中の酸素空孔の拡散と分布形態:第一原理計算に基づくその化学的傾向の検討2021

    • Author(s)
      笈川拓也、中山隆史
    • Organizer
      第26回電子デバイス界面テクノロジー研究会 (EDIT 2021)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 金属/SiC界面のショットキーバリアの界面原子による変調:第一原理計算による検討2021

    • Author(s)
      西本瑛、中山隆史
    • Organizer
      第26回電子デバイス界面テクノロジー研究会 (EDIT 2021)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 0次元ペロブスカイト半導体Cs_4PbX_6の安定性と光学的性質:第一原理計算による検討2021

    • Author(s)
      冨田愛美, 中山隆史
    • Organizer
      第82回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Control of Point-defect Formation by Electric Field at Metal/semiconductor Interfaces; First-principles View (invited talk)2021

    • Author(s)
      Takashi Nakayama
    • Organizer
      Int. Conf. Processing & Manufactoring of Advanced Materials (THERMEC 2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 強誘電HfO2相の安定性における帯電と歪の複合効果:第一原理計算による検討2021

    • Author(s)
      新井千慧、白石悠人、洗平昌晃、白石賢二、中山隆史
    • Organizer
      第26回電子デバイス界面テクノロジー研究会 (EDIT 2021)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] p/n接合中の共鳴不純物準位によるトンネル電流の増大:直接・間接バンドギャップ系の比較2021

    • Author(s)
      趙祥勲、中山隆史
    • Organizer
      第26回電子デバイス界面テクノロジー研究会 (EDIT 2021)
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] p/n接合中の共鳴不純物準位によるトンネル電流の増大:直接・間接バンドギャップ系の比較2021

    • Author(s)
      趙祥勲,中山隆史
    • Organizer
      第68回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] ペンタセン膜中の金属原子クラスターの形態と安定性:第一原理計算による検討2021

    • Author(s)
      渡邊駿汰,川端康平, 富田陽子,中山隆史
    • Organizer
      第68回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 遷移金属酸化物中の酸素空孔の拡散と分布の理論的検討2020

    • Author(s)
      笈川拓也、長澤立樹、中山隆史
    • Organizer
      第81回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 帯電が誘起する強誘電直方晶 HfO2薄膜の安定性:第一原理計算による検討2020

    • Author(s)
      新井千慧、白石悠人、洗平昌晃、白石賢二、中山隆史
    • Organizer
      第81回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] ペンタセン膜中の構造欠陥の電子状態:第一原理計算による検討2020

    • Author(s)
      渡邊駿汰、中山隆史
    • Organizer
      第81回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Charging-induced Stabilization of Ferroelectric Orthorhombic HfO2 Phase: Key Growth Processes based on First-principles Study2020

    • Author(s)
      T.Nakayama, K.Arai, Y.Shiraishi, R.Nagasawa, M.Araidai, K.Shiraishi
    • Organizer
      51th IEEE Semiconductor Interface Specialists Conference (IEEE SISC 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Charging-induced stabilization of ferroelectric orthorhombic HfO2 films: first-principles study on key growth conditions2020

    • Author(s)
      K.Arai, Y.Shiraishi, R.Nagasawa, M.Araidai, K.Shiraishi, T.Nakayama
    • Organizer
      2020 Int. Conf. on Solid State Devices and Materials (SSDM 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] 不純物を持つ Si-p/n接合におけるトンネル電流:3次元計算による検討2020

    • Author(s)
      趙祥勲、中山隆史
    • Organizer
      第81回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] Electronic structures and impurity accumulation around extended defects in pentacene films: first-principles study2020

    • Author(s)
      S.Watanabe, T.Nakayama
    • Organizer
      2020 Int. Conf. on Solid State Devices and Materials (SSDM 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K03815
  • [Presentation] First-principles study of defect properties in radiation-detectable TlBr2019

    • Author(s)
      M.Ishikawa, T.Nakayama, K.Wakita, Y.G.Shim, T.Onodera, N.Mamedov
    • Organizer
      The 46th International Symposium on Compound Semiconductor, Nara Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] New types of resonant tunneling currents at Si-p/n junctions; Theoretical design2019

    • Author(s)
      S. Cho, T. Nakayama
    • Organizer
      International Conference on Solid State Devices and materials (SSDM 2019), Nagoya Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Scattered distribution of oxygen vacancies in anatase TiO2 film; first-principles study on VMCO-memory characteristics2019

    • Author(s)
      T. Oikawa, R. Nagasawa, M. Araidai, K. Shiraishi, T. Nakayama
    • Organizer
      International Conference on Solid State Devices and materials (SSDM 2019), Nagoya Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Physics of Gap-state Control at Metal/Semiconductor Junctions; Schottky Barrier and Interface Defects2019

    • Author(s)
      T. Nakayama
    • Organizer
      19th International Workshop on Junction Technology (IWJT 2019), Kyoto Japan
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Generation of one-dimensional metal-atom nano-rods in insulating SAM films: first-principles study2019

    • Author(s)
      S. Watanabe, T. Nakayama
    • Organizer
      International Conference on Solid State Devices and materials (SSDM 2019), Nagoya Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Metal-atom Penetration into Organic Solids: Difference between σ- and π-orbital Molecular Systems2018

    • Author(s)
      S. Watanabe, T. Nakayama
    • Organizer
      14th Int. Conf. Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] 金属/半導体・絶縁体界面のショットキーバリアと安定性:gap状態の役割2018

    • Author(s)
      中山隆史
    • Organizer
      日本学術振興会第154委員会 第107回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Metal-atom distribution and its effects on carrier transport in organic semiconductors2018

    • Author(s)
      Y. Tomita, K. Kawabata, T. Nakayama
    • Organizer
      UK Semiconductors 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] TiN/Ge界面のショットキーバリアに関する第一原理計算による検討Ⅱ -乱れた界面のショットキーバリア-2018

    • Author(s)
      西本俊輝、中山隆史
    • Organizer
      第65回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Origin of Fermi-level depinning at metal/Ge interfaces: first-principles study2018

    • Author(s)
      T. Nishimoto, T. Nakayama
    • Organizer
      14th Int. Conf. Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Electronic and optical properties of 2-dimensional incommensurate Tl-based semiconductors: First-principles study on TlInS2 ,TlGaSe2 and TlGaS22018

    • Author(s)
      M. Ishikawa, T. Nakayama, K. Wakita, Y. G. Shim, N. Mamedov
    • Organizer
      34th Int. Conf. Physics of Semiconductors (ICPS2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Structural and Charging Stability of Metal Nanodot Memory in SiO2; First-Principles Study2018

    • Author(s)
      T. Nakayama, S. Yamazaki, Y. Shiraishi
    • Organizer
      Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] 金属/SiO2界面における電場下での金属原子の拡散2018

    • Author(s)
      長澤立樹、浅山佳大、中山隆史
    • Organizer
      第65回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Physics of Fermi-Level "Unpinning" at Metal/Ge Interfaces; First-Principles View2018

    • Author(s)
      T. Nakayama, T. Nishimoto
    • Organizer
      Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] 金属原子の有機分子膜への侵入過程に関する理論的検討-ペンタセンの場合2018

    • Author(s)
      渡邊駿汰,中山隆史
    • Organizer
      第65回応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Metal-atom distribution and its effects on carrier transport in organic semiconductors2018

    • Author(s)
      Y. Tomita, K. Kawabata, T. Nakayama
    • Organizer
      19th Int. Symp.Physics of Semiconductors and Applications (ISPSA 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Resonance-enhanced Tunneling Current through Doped Si-p/n Junction; Theoretical Study2018

    • Author(s)
      S. Cho, S. Iizuka, T. Nakayama
    • Organizer
      2018 Int. Conf. on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Why Fermi-level Pinning is broken at some Metal/Ge Interfaces: based on first-principles study of TiN/Ge(001)2018

    • Author(s)
      T. Nakayama, T. Nishimoto
    • Organizer
      9th Int. SiGe Technol. and Device Meeting & 11th Int. Conf. on Silicon Epitaxy and Hetero-structures
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] 金属原子の有機SAM膜への侵入過程に関する理論的検討2017

    • Author(s)
      渡邊駿汰,中山隆史
    • Organizer
      第78回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Acceleration of metal-atom diffusion under electric field at metal/insulator interfaces: First principles study2017

    • Author(s)
      R.Nagasawa, Y.Asayama, T.Nakayama
    • Organizer
      2017 Int. Conf. on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] First-principles study of optical properties in incommensurate TlInS2 ,TlGaSe2 and TlGaS22017

    • Author(s)
      M.Ishikawa, T.Nakayama, K.Wakita, Y.G.Shim, N.Mamedov
    • Organizer
      29th Int. Conf. Defects in Semiconductors (ICDS29)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] TiN/Ge界面のショットキーバリアに関する第一原理計算による検討2017

    • Author(s)
      西本俊輝、中山隆史
    • Organizer
      第78回応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Metal-atom Ionization and Diffusion under Electric Field around Metal/insulator Interfaces; First-principles View2017

    • Author(s)
      T. Nakayama, Y. Asayama, R. Nagasawa
    • Organizer
      232nd ECS MEETING
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05488
  • [Presentation] Metal-Atom Penetration and Clustering Processes in PTCDA Thin Films; First-Principles Study of Film Degradation2016

    • Author(s)
      K. Kawabata, T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Epochal Tsukuba (Tsukuba Japan)
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Physics of Metal/Ge Interfaces: Interface Defects and Fermi-level Depinning2016

    • Author(s)
      T. Nakayama, S. Sasaki, Y. Asayama
    • Organizer
      PRiME 2016 (Pasific Rim Meeting on Electrochemical and Solid-state Science)
    • Place of Presentation
      Honolulu USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study2016

    • Author(s)
      S. Iizuka, T. Nakayama
    • Organizer
      ISCSI-VII/ISTDM2016(7th Int. Symp. on Control of Semiconductor Interfaces & Int. SiGe Technology and Device Meeting)
    • Place of Presentation
      Nagoya Univ. (Nagoya Japan)
    • Year and Date
      2016-06-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Charge Retention and Stability of Metal Nanodots in SiO2: First-principles Study on Metal Dependence2016

    • Author(s)
      S. Yamazaki, Y. Asayama, Y. Onda, T. Nakayama
    • Organizer
      SSDM 2016 (Int. Conf. Solid State Devices and Materials)
    • Place of Presentation
      Epochal Tsukuba (Tsukuba Japan)
    • Year and Date
      2016-09-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Ionization and diffusion of metal atoms under electric field at metal/insulator interfaces; First-principles study2016

    • Author(s)
      Y. Asayama, M. Hiyama, T. Nakayama
    • Organizer
      ISCSI-VII/ISTDM2016(7th Int. Symp. on Control of Semiconductor Interfaces & Int. SiGe Technology and Device Meeting)
    • Place of Presentation
      Nagoya Univ. (Nagoya Japan)
    • Year and Date
      2016-06-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] First-principles study of optical properties of incommensurate TlInSe2 and TlInS22016

    • Author(s)
      M. Ishikawa, T. Nakayama, K. Wakita, Y. G. Shim, N. Mamedov
    • Organizer
      ICTMC-20 (20th Int. Conf. Ternary and Multinary Compounds)
    • Place of Presentation
      Halle Germany
    • Year and Date
      2016-09-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] First-principles study of Giant thermoelectric power in incommensurate TlInSe2 and TlInS22016

    • Author(s)
      M. Ishikawa, T. Nakayama, K. Wakita, Y. G. Shim, N. Mamedov
    • Organizer
      19th Int. Conf. Superlattices, Nanostructures and Nanodevices
    • Place of Presentation
      Hong Kong China
    • Year and Date
      2016-07-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Quantum processes of exciton scattering at organic solar organic solar cell interfaces2016

    • Author(s)
      T. Nakayama
    • Organizer
      EMN (Energy Materials Nanotechnology) Qingdao Meeting 2016
    • Place of Presentation
      Qingdao China
    • Year and Date
      2016-06-07
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Metal-atom interactions and clustering in organic semiconductor systems2016

    • Author(s)
      Y. Tomita, T. Nakayama
    • Organizer
      19th Int. Conf. Superlattices, Nanostructures and Nanodevices
    • Place of Presentation
      Hong Kong China
    • Year and Date
      2016-07-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Structural and electronic stability of metal nanodots in amorphous SiO22016

    • Author(s)
      T. Nakayama, Y. Asayama, Y. Onda
    • Organizer
      ICSNN 2016 (19th Int. Conf. on Superlattices, Nanostructures and Nanodevices)
    • Place of Presentation
      Hong Kong China
    • Year and Date
      2016-07-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Quantum processes of exciton dissociation at organic solar-cell interfaces; Effects ofinterface disorder, hot exciton, and polaron2015

    • Author(s)
      T. Nakayama, H. Iizuka, Y. Masugata
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2015))
    • Place of Presentation
      Kona (USA)
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Molecular Vibration Effects on Exciton Scattering Processes at Organic Semiconductor Interfaces2015

    • Author(s)
      Y. Masugata, T. Nakayama
    • Organizer
      15th Int. Conf. Formation of Semiconductor Interfaces (ICFSI-15)
    • Place of Presentation
      International Conference Center Hiroshima (Hiroshima, Hiroshima)
    • Year and Date
      2015-11-15
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] First-principles study of TlInSe2 and TlInS22015

    • Author(s)
      M. Ishikawa, T. Nakayama, K. Wakita, N. Mamedov
    • Organizer
      Int. Conf. Thermoelectric Materials Science 2015 (TMS2015)
    • Place of Presentation
      Nagoya University (Aichi, Nagoya)
    • Year and Date
      2015-11-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Physics of Metal/Ge Interfaces: Fermi-level Unpinning and Interface Disorders2015

    • Author(s)
      T. Nakayama
    • Organizer
      2015 Energy Materials Nanotechnology Cancun Meeting
    • Place of Presentation
      Cancun (Mexico)
    • Year and Date
      2015-07-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Chemical Trend of Isoelectronic Traps in Si Tunnel FET; First-Principles Study2015

    • Author(s)
      S. Iizuka, T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials (SSDM 2015)
    • Place of Presentation
      Sapporo Convention Center (Hokkaido, Sapporo)
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] First-principles study of Nanostructure of TlInSe22015

    • Author(s)
      M. Ishikawa, T. Nakayama, K. Wakita, N. Mamedov
    • Organizer
      Euro. MRS 2015
    • Place of Presentation
      Warsaw (Poland)
    • Year and Date
      2015-09-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] ポリタイプ結晶の電子物性 -積層欠陥と空孔秩序を中心に-2015

    • Author(s)
      中山隆史
    • Organizer
      第45回結晶成長国内会議 (NCCG45)
    • Place of Presentation
      北海道大学 (北海道,札幌)
    • Year and Date
      2015-10-19
    • Invited
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] 第一原理計算によるII-VI族化合物半導体の酸素ドープの光学特性の解析2014

    • Author(s)
      石川真人、中山隆史
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] 第一原理計算によるSn/Ge界面の構造とSBH変調の関係2014

    • Author(s)
      小日向恭祐, 中山隆史
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] 金属/半導体界面における拡散過程の理論検討2014

    • Author(s)
      平松智記, 中山隆史
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Enhanced stability of Pt monolayer films on doped graphene sheets2013

    • Author(s)
      Y. Tomita, T. Park, and T. Nakayama
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A.
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] 自己組織化単分子膜における金属原子の拡散2013

    • Author(s)
      吉田一行、中山隆史
    • Organizer
      第33回表面科学学術講演会
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Enhanced stability of Pt monolayer films on doped graphene sheets2013

    • Author(s)
      Y. Tomita, T. Park, T. Nakayama
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] 3サイト分子架橋系におけるループ電流の過渡特性に関する理論研究2013

    • Author(s)
      飯塚秀行,中山隆史
    • Organizer
      第33回表面科学学術講演会
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Quantum processes of Exciton dissociation at Organic Semiconductor Interfaces2013

    • Author(s)
      K. Sato, T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Fukuoka Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Quantum Processes of Exciton Dissociation at Semiconductor Heterointerfaces2013

    • Author(s)
      T. Nakayama, K. Sato
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] First-principles study of oxygen-doping electric optical states2013

    • Author(s)
      M. Ishikawa and T. Nakayama
    • Organizer
      18th Int. Conf. Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
    • Place of Presentation
      Matsue, Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] FirstPrinciples Theoretical Study of Optical Properties of Oxygen-doped II-VI Semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      16th Int. Conf. II-VII Compound and Related Materials
    • Place of Presentation
      Nagahama, Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] First-Principles Theoretical Study of Optical Properties of Oxygen-doped II-VI Semiconductors2013

    • Author(s)
      M. Ishikawa and T. Nakayama
    • Organizer
      16th Int. Conf. II-VI Compound and Related Materials (II-VI 2013)
    • Place of Presentation
      Nagahama, Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Firstprinciples study of oxygen-doping electric optical states in II-VI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      18th Int. Conf. Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
    • Place of Presentation
      Matsue, Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Firstprinciples study of oxygen-doping states in IIVI semiconductors2013

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      40th Int. Symp. Compound Semiconductors
    • Place of Presentation
      Kobe Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Physics of Interface Segregation; What Determine Schottky Barrier at Metal/Semiconductor Interfaces ?2013

    • Author(s)
      T. Nakayama
    • Organizer
      2013 JSAP-MRS (Japan-USA) Joint Symposia
    • Place of Presentation
      Kyoto Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] First-principles study of oxygen-doping states in II VI semiconductors2013

    • Author(s)
      M. Ishikawa and T. Nakayama
    • Organizer
      ISCS 2013 - 40th Int. Symp. Compound Semiconductors
    • Place of Presentation
      Kobe Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] 界面における電子正孔対の解離シミュレーション2013

    • Author(s)
      佐藤紅介、中山隆史
    • Organizer
      第33回表面科学学術講演会
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Quantum Processes of Exciton Dissociation at Semiconductor Heterointerfaces2013

    • Author(s)
      T. Nakayama and K. Sato
    • Organizer
      Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN 2013)
    • Place of Presentation
      Kauai U.S.A.
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] 分子架橋系における分子-電極接合の幾何と過渡電流2013

    • Author(s)
      佃真吾, 中山隆史
    • Organizer
      第33回表面科学学術講演会
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Disorderinduced Schottky-barrier Changes at Metal/Semiconductor Interfaces; Firstprinciples Calculations2012

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Dopingenhanced Stability of Catalytic Pt Ultrathin Films on Graphene Sheet : First-principles Calculations2012

    • Author(s)
      T. Park, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond
    • Place of Presentation
      Zurich Switzerland
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Firstprinciples study of band-gap reduction of II-VI semiconductors by Oxygen dopings; Comparison to III-V Systems2012

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      17th Int. Conf. Superlattices, Nanostructures, Nanodevices
    • Place of Presentation
      Dresden Germany
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] First-principles Study of Atomic Impurity States in Organic Semiconductors : Their Chemical Classification2012

    • Author(s)
      Y. Tomita, T. Nakayama, S. Okada
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Oxygendoping-induced Band-gap Reduction in II-VI Semiconductors; Comparison to III-V Systems2012

    • Author(s)
      M. Ishikawa, T. Nakayama
    • Organizer
      31st Int. Conf. Phys. Semicond. (ICPS2012)
    • Place of Presentation
      Zurich Switzerland
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Schottkybarrier change by structural disorders at metal/Si interfaces2011

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      Simulation of Semiconductor Processes and Devices (SISPAD)
    • Place of Presentation
      Osaka Japan
    • Year and Date
      2011-09-10
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Physics of Schottkybarrier change by segregation and structural disorder at metal/Si interfaces : First-principles study2011

    • Author(s)
      T. Nakayama
    • Organizer
      ICSI-72011 (7th Int. Conf. Si Epitaxy and Heterostructures)
    • Place of Presentation
      Leuven Belgium
    • Invited
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Firstprinciples study of metal-atom diffusion in graphene and organic solids : intrinsic difference from inorganic systems2011

    • Author(s)
      Y. Tomita, T. Nakayama
    • Organizer
      ISANN 2011 (Int. Symp. Advanced Nanostructures and Nano-Devices)
    • Place of Presentation
      Maui USA
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] How and why loop currents are generated in molecular bridge systems : density-matrix calculation of time evolustion2011

    • Author(s)
      T. Nakayama, H. Iizuka, G. Anagama, Y. Tomita
    • Organizer
      ISANN 2011 (Int. Symp. Advanced Nanostructures and Nano-Devices)
    • Place of Presentation
      Maui USA
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] How and why loop currents are generated in molecular bridge systems: density-matrix calculation of time evolustion2011

    • Author(s)
      T. Nakayama
    • Organizer
      International Symposium on Advanced Nanostructures and Nano-Devices
    • Place of Presentation
      Maui, USA
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study2011

    • Author(s)
      T. Nakayama
    • Organizer
      7th International Conference on Si Epitaxy and Heterostructures(招待講演)
    • Place of Presentation
      Leuven, Belgium
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Photo-absorption spectra of nitrogen-doped InP and GaP : Comparison of direct and indirect band-gap systems2010

    • Author(s)
      M.Ishikawa, T.Nakayama
    • Organizer
      Int.Conf.Superlattices, Nano-structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-22
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control (invited)2010

    • Author(s)
      T.Nakayama
    • Organizer
      International Conference on Solid-State and integrated Circuit Technology
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2010-11-03
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides : First-principles Study2010

    • Author(s)
      T.Nakayama
    • Organizer
      International Symposium on Technology Evolutionfor Silicon Nano-Electronics
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-06-05
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] ナノ界面科学の課題2010

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      長崎大(シンポジウム招待講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010

    • Author(s)
      T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
    • Organizer
      IEDM 2010
    • Place of Presentation
      San Francisco USA
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Suicides exist in Nature2010

    • Author(s)
      T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
    • Organizer
      International Electron Device Meeting (IEDM)
    • Place of Presentation
      サンフランシスコ、米国
    • Year and Date
      2010-12-07
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] 金属/絶縁体界面の物理 -電子準位はどのように整列するのか-2010

    • Author(s)
      中山隆史
    • Organizer
      触媒学会主催 第3回新電極触媒シンポジウム講演
    • Place of Presentation
      静岡(招待講演)
    • Year and Date
      2010-09-09
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control2010

    • Author(s)
      T.Nakayama
    • Organizer
      Int.Conf.on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      Shanghai, China (招待講演)
    • Year and Date
      2010-11-04
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Metal-atom diffusion in organic semiconductors : graphene and oligoacene systems2010

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      30th Int.Conf.Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] ナノ界面科学の課題2010

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会 シンポジウム講演
    • Place of Presentation
      長崎大学(招待講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] ナノ界面科学の課題2010

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会シンポジウム
    • Place of Presentation
      長崎
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Conf.Superlattices, Nano-structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-20
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010

    • Author(s)
      T.Nakayama
    • Organizer
      International Conference on Superlattices, Nano- structures and Nanodevices 2010
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-20
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Metal Silicides : Stability, Stoichiometry, and Schottky Barrier Control2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Conf.on Solid-State and Integrated Circuit Technology
    • Place of Presentation
      Shanghai China(招待講演)
    • Year and Date
      2010-11-03
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides: First-principles Study2010

    • Author(s)
      中山隆史
    • Organizer
      Int.Symp.Technology Evolution for Silicon Nano-Electronics
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2010-06-05
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Doping properties of metal silicides : firstprinciples study on solubility and Schottky barrier2010

    • Author(s)
      T.Nakayama, S.Sotome
    • Organizer
      30th Int.Conf.Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010

    • Author(s)
      中山隆史, 他
    • Organizer
      2010 IEEE International Electron Devices Meeting
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2010-12-07
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Doping properties of metal silicides : first-principles study on solubility and Schottky barrier2010

    • Author(s)
      T.Nakayama
    • Organizer
      30th Int.Conf.Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] 金属/絶縁体界面の物理-電子準位はどのように整列するのか-2010

    • Author(s)
      中山隆史
    • Organizer
      触媒学会燃料電池関連触媒研究会
    • Place of Presentation
      伊東(招待講演)
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] First-principles study of metal-cluster adsorption on graphene/graphite sheets2010

    • Author(s)
      T.Park, T.Nakayama
    • Organizer
      5th Int.Workshop on Electronic Structure and Processes at Molecular-Based Interfaces
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2010-01-26
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Doping properties of metal silicides : first-principles study on solubility and Schottky barrier2010

    • Author(s)
      T.Nakayama
    • Organizer
      30th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2010-07-29
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Segregation-induced Schottky-barrier change at metal/Si interfaces : First-principles study on chemical trend2010

    • Author(s)
      T.Nakayama
    • Organizer
      Int.Conf.Superlattices, Nanostructures and Nanodevices
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-07-20
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Stability, Doping, and Schottky Barrier of Polymorphic Silicides : First-principles Study2010

    • Author(s)
      T.Nakayama
    • Organizer
      Int.Symp.Technology Evolution for Silicon Nano-Electronics
    • Place of Presentation
      東京
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Transient current behavior at nano-contact nano-scale systems(invited)2009

    • Author(s)
      T.Nakayama
    • Organizer
      Photonics Integration-Core Electronics Workshop
    • Place of Presentation
      Cambridge, England
    • Year and Date
      2009-07-03
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Transient current behavior in nano-linked molecular-bridge systems; what causes applied-pulse deformation?2009

    • Author(s)
      T. Nakayama
    • Organizer
      5th Int. Conf. Molecular electronics and Bioelectronics
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2009-03-16
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Adsorption and Diffusion of Metal Atoms in/on Graphene Sheets ; First-principles Study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      15th Int.Symp.Intercalation Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-13
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama, S.Sotome, S.Shinji
    • Organizer
      16th Biannual Conf. Insulating Films on Semi conductors
    • Place of Presentation
      Cambridge, England
    • Year and Date
      2009-06-30
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Schottky barrier at metal/high-k-oxide interfaces2009

    • Author(s)
      中山隆史
    • Organizer
      2nd Int.Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Anan, Japan(招待講演)
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Universal Behavior of Metal-atom Diffusions in Organic Pentacene and Graphene Systems ; First-principles Study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-02
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Energy-level alignment,ionization,and hole transfer of bio-amino acids at protein/semiconductor junctions2009

    • Author(s)
      T. Nakayama
    • Organizer
      5th Int. Conf. Molecular electronics and Bioelectronics
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2009-03-17
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Ionization and Hole-transport in Bio-amino-acid Protein using Amino-acid/Semiconductor Junctions2009

    • Author(s)
      T.Nakayama, M.Oda
    • Organizer
      15th Int.Symp.Intercalation Compounds, Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-12
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] 未来デバイス界面の物理-ショットキーバリアと量子散逸を例に2009

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      筑波大(シンポジウム招待講演)
    • Year and Date
      2009-04-01
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Stability and Schottky barrier of silicides : First-principles study2009

    • Author(s)
      T.Nakayama
    • Organizer
      16th Biannual Conference of Insulating Films on Semi conductors
    • Place of Presentation
      Cambridge, England
    • Year and Date
      2009-06-30
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Ionization and Hole-transport in Bio-amino-acid Protein using Amino-acid/Semiconductor Junctions2009

    • Author(s)
      T.Nakayama
    • Organizer
      15th Int.Symposium on Intercalation Compounds
    • Place of Presentation
      Beijing, China
    • Year and Date
      2009-05-12
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Metal-atom diffusion in organic solids : graphene and acetylene prototypes2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      5th Int.Conf.Molecular electronics and Bioelectronics
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      2009-03-17
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] 可視光で見る埋もれた界面の電子:反射率差分光(RDS)の物理2009

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会講演会
    • Place of Presentation
      .筑波大(シンポジウム招待講演)
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Polymorphic Silicide Interfaces ; First-principles Study of Stability, Doping, and Schottky Barrier2009

    • Author(s)
      T.Nakayama
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Metal atom diffusion in organic solids ; first-principles study2009

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      G-COE Workshop on Organic Elctronics : Electronic States, Charge Transport and Devices
    • Place of Presentation
      Chiba, Japan(招待講演)
    • Year and Date
      2009-11-05
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Polymorphic Silicide Interfaces ; Firstprinciples Study of Stability, Doping, and Schottky Barrier2009

    • Author(s)
      T.Nakayama, S.Sotome
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Transient current behavior at nano-contact nano-scale systems2009

    • Author(s)
      中山隆史
    • Organizer
      Photonics Integration-Core Electronics Workshop
    • Place of Presentation
      Cambridge, UK(招待講演)
    • Year and Date
      2009-07-03
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Schottky barrier at metal/high-k-oxide interfaces(invited)2009

    • Author(s)
      T.Nakayama
    • Organizer
      2nd Int.Workshop on Epitaxial Growth and Fundam ental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Anan, Japan
    • Year and Date
      2009-08-09
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Transient current behavior in nano-linked molecularbridge systems ; what causes appliedpulse deformation?2009

    • Author(s)
      中山隆史
    • Organizer
      5th Int. Conf.Molecular Elect.Bioelectronics
    • Place of Presentation
      Miyazaki, Japan(招待講演)
    • Year and Date
      2009-03-16
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Schottky barrier at metal/high-k interfaces (invited)2008

    • Author(s)
      T. Nakayama
    • Organizer
      2008 MRS Spring Meeting
    • Place of Presentation
      San Francisco USA
    • Year and Date
      2008-03-26
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] First-principles study of defect-induced carrier generation in InN films; dislocation vs. vacancies and electrode interfaces2008

    • Author(s)
      T. Nakayama
    • Organizer
      15th Int. Conf.Superlattices,Nanostructures,and Nanodevices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-05
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Schottky barrier at metal/high-k interfaces2008

    • Author(s)
      T.Nakayama, R.Ayuda, H.Nii, K.Shiraishi
    • Organizer
      2008 MRS Spring Meeting
    • Place of Presentation
      San Francisco, USA(招待講演)
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Currentinduced quantum friction of nanolinked molecule vibration2008

    • Author(s)
      T.Nakayama, Y.Shigeno
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Theoretical investigations on metal/high-k interfaces2008

    • Author(s)
      K. Shiraishi. T. Nakayama, S. Miyazaki, A. Ohta, Y. Akasaka, H. Watanabe, Y. Nara, K. Yamada
    • Organizer
      2008 International Conference on Solid-State and Integrated-Circuit Technology
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Theory of current-induced friction of nano-linked molecule vibration2008

    • Author(s)
      T. Nakayama
    • Organizer
      15th Int. Conf.Superlattices,Nanostructures,Nanodevices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-07
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Defect-induced carrier generation in InN films (invited)2008

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Workshops on Frontier Optoelectronic Materials and Devices
    • Place of Presentation
      Hakone, Japan
    • Year and Date
      2008-03-03
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Physics of Schottky barrier at metal/high-k interfaces(invited)2008

    • Author(s)
      T. Nakayama
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      San Francisco,USA
    • Year and Date
      2008-03-26
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Stability and Schottky barrier of polymorphic Ni_xSi_y silicides on Si substrate; first-principles study2008

    • Author(s)
      T. Nakayama
    • Organizer
      29th Inc. Conf. Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-2008

    • Author(s)
      K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta, S. Miyazaki
    • Organizer
      214th Meeting of Electrochemical Society
    • Place of Presentation
      Pheonix, AZ., USA
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Defectrinduced carrier generation in InN films(invited)2008

    • Author(s)
      T. Nakayama
    • Organizer
      Int.Workshops on Frontier Optoelectronic Materials and Devices
    • Place of Presentation
      Hakone,Japan
    • Year and Date
      2008-03-03
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Electron carrier generation by edge dislocations in InN films ; first-principles study2008

    • Author(s)
      T.Nakayama, Y.Takei
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-08-01
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Schottky barrier at metal/high-k interfaces (invited)2008

    • Author(s)
      T. Nakayama
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2008-03-26
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Stability and Schottky barrier of polymorphic NixSiy silicides on Si substrate ; first-principles study2008

    • Author(s)
      T.Nakayama, S.Shinji
    • Organizer
      29th Int.Conf.Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Electron carrier generation by edge dislocations in InN films; first_ principles study2008

    • Author(s)
      T. Nakayama
    • Organizer
      29th Inc. Conf. Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-08-01
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Current-induced quantum friction in nano-linked molecule vibration2008

    • Author(s)
      中山隆史
    • Organizer
      13th Advanced Heterostructure and Nanostructures Workshop
    • Place of Presentation
      Kona, USA
    • Year and Date
      2008-12-09
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Theory of current-induced friction of nano-linked molecule vibration2008

    • Author(s)
      T.Nakayama, Y.Shigeno
    • Organizer
      15th Int.Conf.Superlattices, Nanostructures, Nano devices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-07
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Defect-induced carrier generation in InN films (invited)2008

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Workshops on Frontier Optoelectronic Materials and Devices
    • Place of Presentation
      Hakone Japan
    • Year and Date
      2008-03-03
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Firstprinciples study of defect-induced carrier generation in InN films ; dislocation vs. vacancies and electrode interfaces2008

    • Author(s)
      T.Nakayama, Y.Takei
    • Organizer
      15th Int.Conf.Superlattices, Nanostructures, Nano devices
    • Place of Presentation
      Natal, Brazil
    • Year and Date
      2008-08-05
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Electronic breathing of transient current through molecule-bridge systems2008

    • Author(s)
      Y.Tomita, T.Nakayama
    • Organizer
      13th Advanced Heterostructure and Nanostructures Workshop
    • Place of Presentation
      Kona, USA
    • Year and Date
      2008-12-09
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Physics of Schottky barrier at Metal/high-k Interfaces2008

    • Author(s)
      T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
    • Organizer
      2008 MRS Spring Meeting
    • Place of Presentation
      San Francisco, USA(invited)
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Physics of Schottky barrier at Metal/high-k Interface2008

    • Author(s)
      T. Nakayama, R. Ayuda, H. Nii, K. Shiraishi
    • Organizer
      2008 MRS Spring Meeting, H5.5
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18360017
  • [Presentation] Current-induced quantum friction of nano-linked molecule vibration2008

    • Author(s)
      T. Nakayama
    • Organizer
      29th Inc. Conf. Physics Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      2008-07-29
    • Data Source
      KAKENHI-PROJECT-20540310
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces ; theoretical view2007

    • Author(s)
      T. Nakayama(Invited)
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18360017
  • [Presentation] Theoretical Studies on Fermi Level Pining of Hf-Based High-K Gate Stacks Based on Thermodynamics2007

    • Author(s)
      K., Shiraishi・Y., Akasaka・G., Nakamura・T., Nakayama・S., Miyazaki・H., Watanabe・A., Ohta・K., Ohmori・T., Chikyow・Y., Nara・K., Yamada
    • Organizer
      212th Meeting of Electrochemical Society
    • Place of Presentation
      Washington D. C., USA
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007

    • Author(s)
      K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, K. Yamada
    • Organizer
      211th Meeting of Electrochemical Society
    • Place of Presentation
      Chicago, USA
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Schottky banier and stability of metal/high-k ilterfaces;theoreticalview (invited)2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int.Conf.on Sohd State Devices and Materials
    • Place of Presentation
      Tsukuba,Japan
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces ; theoretical view2007

    • Author(s)
      T.Nakayama
    • Organizer
      Int.Conf.Solid State Devices and Materials
    • Place of Presentation
      Tsukuba Japan [Invited]
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007

    • Author(s)
      K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, K. Yamabe, and K. Yamada
    • Organizer
      211th Meeting of Electrochemical Society
    • Place of Presentation
      Chicago, USA
    • Data Source
      KAKENHI-PROJECT-18360017
  • [Presentation] Recent Progress in Understanding the Mechanism of Shottoky Barrier Height Formation at Various Interfaces2007

    • Author(s)
      K. Shiraishi, T. Nakayama, S. Okada, S. Miyazaki, H. Watanabe, Y. Akasaka, T. Chikyow, Y. Nara, K. Yamada
    • Organizer
      International Symposium on Theories of Organic-Metal Interfaces 2007
    • Place of Presentation
      Suita, Osaka, Japan
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Unusual Schottky Barrier at Metal/High-k Interfaces (invited)2007

    • Author(s)
      中山隆史
    • Organizer
      物性研短期研究会「計算物性物理学の進展」
    • Place of Presentation
      物性研 柏
    • Year and Date
      2007-11-01
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Theoretical Studies on Metal/.High-k Gate Stacks2007

    • Author(s)
      K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada
    • Organizer
      211th Meeting of Electrochemical Society
    • Place of Presentation
      Chicago, USA
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Ionization of bio-amino acids/Transient current in nano-contact systems; theoretical study (invited)2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Workshop on Super-Functionality Organic Devices
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2007-06-19
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan.
    • Data Source
      KAKENHI-PROJECT-18360017
  • [Presentation] Theoretical Studies on Metal/. High-k Gate Stacks2007

    • Author(s)
      K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S.Miyazaki, H.Watanabe, A.Ohta, K. Ohmori, T. Chikyow, Y. Nara, K.Yamabe, and K. Yamada(Invited)
    • Organizer
      211th Meeting of Electrochemical Society, Chicago
    • Place of Presentation
      USA
    • Data Source
      KAKENHI-PROJECT-18360017
  • [Presentation] Ionization of bio-amino acids/Transient current ill nanocontact systems; theoretical study(invited)2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int.Workshop on Super'Functionality Organic Devices
    • Place of Presentation
      Chiba,Japan
    • Year and Date
      2007-06-19
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Unusual Schottky Barrier at Metal/High-k Interfaces (invited)2007

    • Author(s)
      T. Nakayama
    • Organizer
      ISSP University of Tokyo meeting "development of computational condensed matter physics"
    • Place of Presentation
      Kashiwa Japan
    • Year and Date
      2007-11-01
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Ionization of bio-amino acids/Transient current in nano-contact systems; theoretical study (invited)2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Workshop on Super-Functionality Organic Devices
    • Place of Presentation
      Chiba Japan
    • Year and Date
      2007-06-19
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view (invited)2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view (invited)2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Conf. on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba Japan
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Schottky barrier and stability of metal/high-k interfaces; theoretical view2007

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan.
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Physics at metal/insulator interfaces; atomic and electronic structures (invited, in Japanese)2006

    • Author(s)
      T. Nakayama
    • Organizer
      Jpn. Appl. Phys. Meeting Symp
    • Place of Presentation
      Ritsumeikan Univ. Shiga Japan
    • Year and Date
      2006-08-28
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Physics of Metal/High-k Interfaces2006

    • Author(s)
      T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
    • Organizer
      Fourth International Symposium on High Dielectric Constant Gate Stacks at the 210th Meeting of Electrochemical Society
    • Place of Presentation
      Cancun, Mexico
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] 金属/絶縁体界面の物理-構造と電子物性-(invited)2006

    • Author(s)
      中山隆史
    • Organizer
      応用物理学会シンポジウム
    • Place of Presentation
      立命館大 滋賀
    • Year and Date
      2006-08-28
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Defect Formation in Si and ZnSe/GaAs Epitaxy (invited)2006

    • Author(s)
      T. Nakayama
    • Organizer
      Int. Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Bonassola Italy
    • Year and Date
      2006-09-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Design principles for effective workfunctions of gate metals (invited)2006

    • Author(s)
      T. Nakayama
    • Organizer
      SEMI Forum Japan
    • Place of Presentation
      Osaka Japan
    • Year and Date
      2006-06-12
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Physics of Metal/High-k Interfaces (invited)2006

    • Author(s)
      T. Nakayama
    • Organizer
      4th Int. Symp. on High Dielectric Constant Gate Stacks
    • Place of Presentation
      Cancun Mexico
    • Year and Date
      2006-11-02
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] 金属/絶縁体界面の物理:その構造と電子特性(invited)2006

    • Author(s)
      中山隆史
    • Organizer
      ゲートスタック第11回研究会-材料・プロセス・評価の物理-
    • Place of Presentation
      三島 静岡
    • Year and Date
      2006-02-03
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] What Happen at High-k Dielectric Interfaces?2006

    • Author(s)
      K. Shiraishi, T. Nakayama, Y. Akasaka, H. Takeuchi, S. Miyazaki, N. Umezawa, G. Nakamura, A. Ohta, T. Nakaoka, H. Watanabe, K. Yamabe, K. Ohmori, P. Ahmet, T. Chikyow, Y. Nara, H. Iwai, K. Yamada
    • Organizer
      37th IEEE Semiconductor Interface Specialist Conference
    • Place of Presentation
      San Diego, CA, USA
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] Physics of metal/insulator interfaces; crystal structures and electronic properties (invited, in Japanese)2006

    • Author(s)
      T. Nakayama
    • Organizer
      11th gate Stack meeting Physics of materials, processes and analysis
    • Place of Presentation
      Mishima Sizuoka Japan
    • Year and Date
      2006-02-03
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Elemental processes of interface analysis theoretical view (invited, in Japanese)2006

    • Author(s)
      T. Nakayama
    • Organizer
      Surf. Sci. Soc. Lecture
    • Place of Presentation
      Tokyo Science Univ., Tokyo
    • Year and Date
      2006-11-16
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Physics of interfaces between gate electrodes and high-k dielectrics2006

    • Author(s)
      K. Shiraishi, H. Takeuchi, Y. Akasaka, T. Nakayama, S. Miyazaki, T. Nakaoka, A. Ohta, H. Watanabe, N. Umezawa, K. Ohmori, P. Ahmet, K. Toii, T. Chikyow, Y. Nara, T-J. King Liu, H. Iwai, K. Yamada
    • Organizer
      8th International Conference on Solid-State and Integrated-Circuit Technology
    • Place of Presentation
      Shanghai, China
    • Data Source
      KAKENHI-PROJECT-18063003
  • [Presentation] 理論から見た界面分析の基礎過程(invited)2006

    • Author(s)
      中山隆史
    • Organizer
      表面科学会基礎講座
    • Place of Presentation
      東京理科大 東京
    • Year and Date
      2006-11-16
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17540291
  • [Presentation] Why Defect Density Remarkably Increases at Metal/Ge Interfaces;

    • Author(s)
      T. Nakayama
    • Organizer
      2014 Workshop on Innovative Nanoscale Devices and Systems (WINDS)
    • Place of Presentation
      Kohala USA
    • Year and Date
      2014-11-30 – 2014-12-05
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Stability and Schottky Barrier of Spin-polarized Fe3Si/Ge Interfaces; First-Principles Study

    • Author(s)
      K. Kobinata, T. Nakayama
    • Organizer
      8th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-8)
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Chemical Trend of Atomic Impurity States in Organic Semiconductor Films; Theoretical Investigation

    • Author(s)
      Y. Tomita, T. Nakayama
    • Organizer
      2012 Int. Conf. on Solid State Devices and Materials (SSDM2012)
    • Place of Presentation
      Kyoto Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] How and Why Loop Currents Are Generated in Molecular Bridge Systems : Density-Matrix Calculation of Time Evolution

    • Author(s)
      H. Iizuka, T. Nakayama, G. Anagama
    • Organizer
      6th Int. Symp. Surface Science(ISSS-6)
    • Place of Presentation
      Tokyo Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Physics of Fermi-level Unpinning at Metal/Ge Interfaces

    • Author(s)
      T. Nakayama, K.Kobinata, S.Sasaki
    • Organizer
      Int. Conf. Superlattice, Nanostructures, and Nanodevices (ICSNN 2014)
    • Place of Presentation
      Savannah USA
    • Year and Date
      2014-08-03 – 2014-08-08
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Defect distribution and MIGS at metal/Ge interfaces: first-principles study

    • Author(s)
      S. Sasaki, T.Hiramastu, K.Kobinata, T.Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials (SSDM2014)
    • Place of Presentation
      Tsukuba Japan
    • Year and Date
      2014-09-08 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Physics of Metal/Ge Interfaces: Fermi-level Unpinning and Interface Disorders

    • Author(s)
      T. Nakayama, K.Kobinata, S.Sasaki
    • Organizer
      Int. Uni. Material Research Society (IUMRS 2014)
    • Place of Presentation
      Fukuoka Japan
    • Year and Date
      2014-08-24 – 2014-08-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Quantum Process of Exciton Dissociation at Organic Semiconductor Interfaces

    • Author(s)
      T. Nakayama, Y.Masugata, K.Sato
    • Organizer
      Int. Conf. Superlattice, Nanostructures, and Nanodevices (ICSNN 2014)
    • Place of Presentation
      Savannah USA
    • Year and Date
      2014-08-03 – 2014-08-08
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] First-Principles Study of N, O, and F Molecule-Dot Doping in III-V and II-VI Semiconductors

    • Author(s)
      M. Ishikawa, T.Nakayama
    • Organizer
      Int. Conf. Superlattice, Nanostructures, and Nanodevices (ICSNN 2014)
    • Place of Presentation
      Savannah USA
    • Year and Date
      2014-08-03 – 2014-08-08
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Theoretical study of current fluctuation in multi-contact molecular bridge systems

    • Author(s)
      S. Tsukuda, T.Nakayama
    • Organizer
      Int. Conf. Solid State Devices and Materials (SSDM2014)
    • Place of Presentation
      Tsukuba Japan
    • Year and Date
      2014-09-08 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-26400310
  • [Presentation] Enhanced Stability of Catalytic Pt Ultrathin Films on Doped Graphene Sheets : Firstprinciples Study

    • Author(s)
      T. Park, T. Nakayama
    • Organizer
      6th Int. Symp. Surface Science (ISSS-6)
    • Place of Presentation
      Tokyo Japan
    • Data Source
      KAKENHI-PROJECT-23540361
  • [Presentation] Quantum process of exciton dissociation at disordered organic solar-cell interfaces

    • Author(s)
      H. Iizuka, T.Nakayama
    • Organizer
      The 7th Int. Symp. Surface Science
    • Place of Presentation
      Matsue Japan
    • Year and Date
      2014-11-02 – 2014-11-06
    • Data Source
      KAKENHI-PROJECT-26400310
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