HIRAYAMA Hideki 平山秀樹

… Alternative Names

平山秀樹ヒラヤマヒデキ

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Researcher Number	70270593
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Affiliation (Current)	2025: 国立研究開発法人理化学研究所, 開拓研究所, 主任研究員 2025: 国立研究開発法人理化学研究所, 光量子工学研究センター, チームディレクター
Affiliation (based on the past Project Information) *help	2024: 国立研究開発法人理化学研究所, 開拓研究本部, 主任研究員 2018 – 2020: 国立研究開発法人理化学研究所, 開拓研究本部, 主任研究員 2015 – 2017: 国立研究開発法人理化学研究所, 平山量子光素子研究室, 主任研究員 2014: 理研, 平山量子光素子研究室, 主任研究員 2012 – 2014: 独立行政法人理化学研究所, 平山量子光素子研究室, 主任研究員 … More 2012: 埼玉大学, 理化学研究所・平山量子光素子研究室, 主任研究員 2011: 理化学研究所 2011: 理化学研究所, 平山量子光素子研究室, 主任研究員 2006 – 2011: 独立行政法人理化学研究所, テラヘルツ量子素子研究チーム, チームリーダー 2010: 埼玉大学, 理化学研究折・テラヘルツ量子素子研究チーム, チームリーダー 2009: 理化学研究所, テラヘルツ量子素子研究チーム, チームリーダー 2007: The Institute of Physical and Chemical Research, Tera-Hertz Quantum Device Group, Team Leader 2006: 東京工業大学, 理化学研究所・高効率LED研究開発チーム, 副主任研究員 2005: 理化学研究所, 極微テバイス工学研究室, 研究員 2004: 東京工業大学, 理化学研究所・極微デバイス工学研究室, 研究員 2003 – 2004: RIKEN, Advanced Devices laboratory, Senior Research Scientist, 石橋極微デバイス工学研究室, 先任研究員 2003: 東京工業大学, 理化学研究所・極微デバイス研究室, 研究員 2003: 独立行政法人理化学研究所, 極微デバイス工学研究室, 先任研究員 2002: The Institute of Physical and Chemical Research, Senior Research Scientist, 半導体工学研究室, 先任研究員 1998 – 2002: 理化学研究所, 半導体工学研究室, 研究員 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Broad Section D / Crystal engineering / Science and Engineering / Science and Engineering / Applied optics/Quantum optical engineering Except Principal Investigator Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Basic Section 21050:Electric and electronic materials-related / Applied materials science/Crystal engineering / Science and Engineering
Keywords	Principal Investigator 窒化物半導体 / 深紫外LED / MOCVD / テラヘルツ / 貫通転位密度 / AlGaN / 超格子 / MBE結晶成長 / 電流注入 / サブバンド間遷移 … More / 量子カスケードレーザ / 紫外LED / 結晶成長 / 内部量子効率 / 量子カスケードレーザー / Wide bandgap / 紫外半導体レーザ / 交互供給成長法 / Mgドーピング / 交互供給法 / MOCVD法 / ワイドバンドギャップ / 自然放出光 / 分子線エピタキシー / 金属プラズモン導波路 / In組成変調 / InAlGaN4元混晶 / 有機金属気相成長法 / III族窒化物半導体 / サブバンド間遷移発光 / バンド内遷移 / バンド内遷位発光 / バンド内遷位 / 未開拓波長 / 量子エレクトロニクス / 深紫外LD / THｚ－QCL / テラヘルツQCL / THz-QCL / テラヘルツ量子カスケードレーザ / 特異構造結晶 / Photoluminescence / Optical properties / Threading dislocation density / UV-LEDs / In segregation / Quaternary InAlGaN / MOCVD成長 / GaN基板 / 貫通転移密度 / 紫外高効率発光 / フォトルミネッセンス / Hall-effect measurement / Co-doping / Mg-doping / Alternating supply method / Deep UV-LED / パルス供給法 / ホール濃度 / サファイヤ / GaN / p型 / 不純物対 / 第一原理計算 / MBE / 高濃度P型 / 交互供給コドーピング / コドーピング / 光取り出し効率 / 光取りだし効率 / 縦型LED / Si基板 / AlN / p型半導体 / 高輝度LED / InAlGN4元混晶 / 貫通転位 / AINテンプレート / InAIGaN / AIGaN / 深外LED / AlNテンプレート / InAlGaN / 注入効率 / 外部量子効率 / アンチサーファクタント / 量子ドットレーザー / 紫外レーザー / 量子ドット … More Except Principal Investigator AlGaN / フォトルミネッセンス / 欠陥準位 / 高効率化 / 動作時の欠陥検出 / 紫外LED / 緑色LED / 青色LED / 禁制帯内励起光 / 非発光再結合 / 青～緑色LED / UV-LED / AlGaAs / GaAs / GaN / Level broadening / Roughness-induced charge / Interface roughness / Random electric field / Self-energy / Dipole scattering / Radom field / Alloy disorder / NEGF / QCL / temperature modulation technique / boron oxide material / flax crystal growth technique / anti-surfactant method / hetero nonlinear photonic crystal / vertical type Deep UV LED / two light beam in-situ monitoring system / deep UV LED / ワイドバンドギャップ / LED / ドーピング / p型 / Al N / ナノテクノロジー / 半導体発光デバイス / 深紫外 / 低転位化 / レーザーリフトオフ / 低転移化 / 縦型LED / 結晶成長 / 深紫外線 / Al GaN / MOCVD / p型ZnO / フラックス法 / 高効率深紫外波長変換 / 非線型フォトニック結晶 / 量子ドットAlInGaN / 表面核生成機構 / 良質AlGaN / 縦型深紫外LED / 温度変調結晶成長法 / ボロン酸化物 / フラックス結晶成長法 / アンチサーファクタント / ヘテロ非線形フォトニック結晶 / 縦型深紫外発光素子 / 2光束その場観測システム / 深紫外半導体発光素子 / Activation energy / Hole concentration / P-type conduction / Impurity doping / Alternative source supply / Aluminum Gallium Nitride / Gallium Nitride / MOVPE / 有機金属気相成長 / 原子層成長法 / 原子位置制御 / 紫外レーザー / 有機金属気相成長法 / スーパーラティス / Mg-ドーピング / III族窒化物半導体 / 活性化エネルギー / 正孔密度 / p型伝導 / 不純物ドーピング / 原料交互供給 / 窒化アルミニウムガリウム / 窒化ガリウム / 有機金属化合物気相成長 / Micromanipulation Technogoly / Spatial Phase Control Regions / Spontaneous Emission Life Time / Spontaneous Emission Control / Photonic Crystals / 選択結晶成長 / リングレーザー / 無しきい値レーザー / マイクロマニピュレーション法 / マイクロマニピュレイション法 / 位相制御領域 / 自然放出寿命 / 自然放出光制御 / フォトニック結晶 / 非発光再結合準位 / 半導体 / 非接触測定 / 2波長励起 Less

A Study on realizing unexplored frequency and room temperature operation THz-QCL through innovation of inter-subband transition mechanismPrincipal Investigator
- Principal Investigator
  
  平山秀樹
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  Institute of Physical and Chemical Research
Searching new operation area for QCL by Gain Mapping using NEGF
- Principal Investigator
  
  Yun Joosun
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Institute of Physical and Chemical Research
Characterization of defect levels in UV-LEDs by below-gap excitation light under operating condition
- Principal Investigator
  
  Kamata Norihiko
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Saitama University
Research on novel light emitting devices using the unique properties generated by singularity of crystalPrincipal Investigator
- Principal Investigator
  
  Hideki Hirayama
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Institute of Physical and Chemical Research
Research on unexplored frequency quantum-cascade lasers using nitride semiconductorsPrincipal Investigator
- Principal Investigator
  
  Hirayama Hideki
- Project Period (FY)
  2015 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Crystal engineering
- Research Institution
  Institute of Physical and Chemical Research
Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substratesPrincipal Investigator
- Principal Investigator
  
  HIRAYAMA Hideki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The Institute of Physical and Chemical Research
Comprehensive multi-level spectroscopy of below-gap states without electrode
- Principal Investigator
  
  KAMATA Norihiko
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Research for Terahertz Quantum Cascade Lasers using Nitride-based SemiconductorsPrincipal Investigator
- Principal Investigator
  
  HIRAYAMA Hideki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The Institute of Physical and Chemical Research
Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope
- Principal Investigator
  
  KAMATA Norihiko
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Research for Far-infrared-Terahertz Quantum Cascade Lasers using Nitride-based SemiconductorsPrincipal Investigator
- Principal Investigator
  
  HIRAYAMA Hideki
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The Institute of Physical and Chemical Research
Research for high-efficiency deep-UV emitting devices using quaternary InAlGaN nitride semiconductorsPrincipal Investigator
- Principal Investigator
  
  HIRAYAMA Hideki
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The Institute of Physical and Chemical Research
Development of deep UV light emitting devices using nano-technology and the application
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  2003 – 2007
- Research Category
  
  Grant-in-Aid for Creative Scientific Research
- Research Institution
  Ritsumeikan University
  Tokyo Institute of Technology
Development of ultraviolet bright light-emitting diodes using quaternary InAlGaNPrincipal Investigator
- Principal Investigator
  
  HIRAYAMA Hideki
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applicationsPrincipal Investigator
- Principal Investigator
  
  HIRAYAMA Hideki, 青柳克信
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN
  Tokyo Institute of Technology
Study on Impurity Co-Doping by Atomic Positional Control
- Principal Investigator
  
  IWAI Souhachi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  RIKEN (The Institute of Physical & Chemical Research)
紫外半導体レーザーの為の高輝度紫外発光III族窒素化物量子ドットに関する研究Principal Investigator
- Principal Investigator
  
  平山秀樹
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  The Institute of Physical and Chemical Research
Fabrication of Photonic Crystals with Spatial Phase Control Regions and their applications to Optical Devices
- Principal Investigator
  
  AOYAGI Yoshinobu
- Project Period (FY)
  1998 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (B)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
  The Institute of Physical and Chemical Research

[Book] O plus E2021
- Author(s)
  平山秀樹
- Publisher
  アドコム・メディア株式会社
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] 特別WEBコラム2020
- Author(s)
  永松謙太郎、安井武史、平山秀樹
- Publisher
  応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] 月刊OPTRONICS2020
- Author(s)
  平山秀樹
- Publisher
  オプトロニクス社
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] クリーンテクノロジー2019
- Author(s)
  平山秀樹
- Total Pages
  5
- Publisher
  日本工業出版
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] Photonics Division2019
- Author(s)
  平山秀樹
- Total Pages
  6
- Publisher
  応用物理学会フォトニクス分科会
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] Recent Progress in AlGaN Deep-UV LEDs2018
- Author(s)
  Hideki Hirayama
- Publisher
  IntechOpen
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] SEMICONDUCTORS AND SEMIMETALS [III-Nitride Semiconductor Optoelectronics]2017
- Author(s)
  H. Hirayama
- Total Pages
  474
- Publisher
  Elsevier
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] SEMICONDUCTORS AND SEMIMETALS [III-Nitride Semiconductor Optoelectronics]2017
- Author(s)
  H. Hirayama
- Total Pages
  474
- Publisher
  Elsevier
- Data Source
  KAKENHI-PROJECT-15H05733
[Book] オプトロニクス2017
- Author(s)
  美濃卓哉、高野隆好、後藤浩嗣、植田充彦、椿健治、平山秀樹
- Total Pages
  180
- Publisher
  オプトロニクス社
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] 学術報告2016
- Author(s)
  平山秀樹
- Total Pages
  34
- Publisher
  太陽紫外線防御研究委員会
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] 信学技報2016
- Author(s)
  大島一晟、定昌史、前田哲利、鎌田憲彦、平山秀樹
- Total Pages
  111
- Publisher
  電子情報通信学会
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] 信学技報2016
- Author(s)
  美濃卓哉，平山秀樹、高野隆好、後藤浩嗣、植田充彦、椿健治
- Total Pages
  111
- Publisher
  電子情報通信学会
- Data Source
  KAKENHI-PLANNED-16H06420
[Book] III-Nitride Ultraviolet Emitters -Technology and Applications-2015
- Author(s)
  H. Hirayama
- Publisher
  Springer Series in Material Science
- Data Source
  KAKENHI-PROJECT-15H05733
[Book] 深紫外LED高効率化への新たな進展2014
- Author(s)
  平山秀樹、前田哲利、藤川紗知恵、豊田史朗、鎌田憲彦
- Total Pages
  9
- Publisher
  オプトロニクス（OPTRONICS）
- Data Source
  KAKENHI-PROJECT-24246010
[Book] 深紫外LED高効率化への新たな進展2014
- Author(s)
  平山秀樹
- Total Pages
  2
- Publisher
  オプトロニクス（OPTRONICS）
- Data Source
  KAKENHI-PROJECT-24246010
[Book] InterLab特集2014
- Author(s)
  平山秀樹、前田哲利、藤川紗知恵、豊田史郎、金澤裕也、鎌田憲彦、椿健治、阪井淳、高野隆好、美濃卓哉、野口憲路
- Total Pages
  7
- Publisher
  株式会社オプトロニクス社
- Data Source
  KAKENHI-PROJECT-24246010
[Book] AlGaN系深紫外LEDの進展と今後の展望2013
- Author(s)
  平山秀樹
- Total Pages
  6
- Publisher
  光産業技術振興協会
- Data Source
  KAKENHI-PROJECT-24246010
[Book] ワイドギャップ半導体2012
- Author(s)
  平山秀樹
- Total Pages
  8
- Publisher
  近未来光エコデバイスへの展開―中赤外、テラヘルツへの広がり―
- Data Source
  KAKENHI-PROJECT-24246010
[Book] LED-UV硬化技術と硬化材料の現状と展望「220-350nm帯AlGaN系紫外LEDの進展と今後の展望2010
- Author(s)
  平山秀樹
- Publisher
  CMC出版(In press)
- Data Source
  KAKENHI-PLANNED-18069014
[Book] グリーンフォトニクス技術資料集-環境ビジネスと光技術-「230-350nm帯AlGaN系紫外高輝度LEDの進展と応用」2010
- Author(s)
  平山秀樹
- Total Pages
  9
- Publisher
  オプトロニクス社
- Data Source
  KAKENHI-PLANNED-18069014
[Book] 「近接場光のセンシング・イメージ技術への応用」第21章「殺菌・医療用途を目指した深紫外LED光源の開発」2010
- Author(s)
  平山秀樹
- Total Pages
  5
- Publisher
  CMC出版
- Data Source
  KAKENHI-PLANNED-18069014
[Book] 光技術コンタクト 48巻8号特集「紫外光学系の動向」「AlGaN系深紫外LEDの進展と展望」2010
- Author(s)
  平山秀樹
- Total Pages
  5
- Publisher
  日本オプトメカトロニクス協会
- Data Source
  KAKENHI-PLANNED-18069014
[Book] ファインセラミックスレポート Vol.28, No.4「AlGaN系深紫外LEDの進展」2010
- Author(s)
  平山秀樹
- Total Pages
  5
- Publisher
  日本ファインセラミックス協会
- Data Source
  KAKENHI-PLANNED-18069014
[Book] 理研環境報告書「深紫外光が導きだす新たなエコ・マーケット」-高品質の結晶を作る数多くのブレークスルーを実現-2009
- Author(s)
  平山秀樹
- Total Pages
  1
- Publisher
  独立行政法理化学研究所
- Data Source
  KAKENHI-PLANNED-18069014
[Book] Display「220-280nm帯AlGaN系深紫外LEDの進展」2009
- Author(s)
  平山秀樹
- Total Pages
  10
- Publisher
  (株)技術情報
- Data Source
  KAKENHI-PLANNED-18069014
[Book] 光技術コンタクト vol.47, 通巻551, 10月号「最短波長領域・高効率深紫外LEDの開発」2009
- Author(s)
  平山秀樹
- Total Pages
  1
- Publisher
  (社)日本オプトメカトロニクス協会
- Data Source
  KAKENHI-PLANNED-18069014
[Book] Modern Wide Bandgap Semiconductores and Related Optoelectronic Devices2007
- Author(s)
  H.Hirayama et al.
- Publisher
  Springer(印刷中)
- Data Source
  KAKENHI-PLANNED-18069014
[Book] 平成18年度光技術動向調査(量子カスケードレーザによる中赤外、テラヘルツ波の発生)2007
- Author(s)
  平山秀樹
- Data Source
  KAKENHI-PROJECT-19206004
[Book] 平成18年度光技術動向調査2007
- Author(s)
  平山秀樹他
- Publisher
  光産業技術振興協会(印刷中)
- Data Source
  KAKENHI-PLANNED-18069014
[Book] 科学立国日本を築く極限に挑む気鋭の研究者たち2006
- Author(s)
  平山秀樹他
- Total Pages
  325
- Publisher
  日刊工業新聞社
- Data Source
  KAKENHI-PLANNED-18069014
[Book] ワイドギャップ半導体光・電子デバイス2006
- Author(s)
  平山秀樹他
- Total Pages
  421
- Publisher
  森北出版(株)
- Data Source
  KAKENHI-PLANNED-18069014
[Book] LED最新技術動向〜性能向上・課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005
- Author(s)
  H.Hirayama
- Publisher
  情報機構
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Book] LED最新技術動向〜性能向上・課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005
- Author(s)
  H.Hirayama
- Publisher
  情報機構
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Book] LED最新技術動向〜性能向上、課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005
- Author(s)
  平山秀樹
- Publisher
  情報機構
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Book] Opt0elelectronic Devices : III-Nitrides, Chapter 11, Quaternary InAlGaN-based UV LEDs2004
- Author(s)
  H.Hirayama
- Publisher
  Elsevier
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Book] Optoelectric Devices : III-V Nitrides, Chapter 11, Quaternary InAlGaN-based UV-LEDs2004
- Author(s)
  H.Hirayama
- Total Pages
  575
- Publisher
  Elsevier
- Data Source
  KAKENHI-PROJECT-14205006
[Book] Quaternary InAlGaN-based UV LEDs, Optoelectronic Devices:III-V Nitres Chaper112004
- Author(s)
  H.Hirayama
- Publisher
  Elsevier
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Book] Opt0electronic Devices : III-Nitrides, Chapter 11, Quaternary InAlGaN-based UV LEDs2004
- Author(s)
  H.Hirayama
- Publisher
  Elsevier
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Demonstration of High Light-Extraction Efficiency of Double-Metal Surface-Emitting Terahertz Quantum Cascade Laser with High Active Region Occupancy by Adopting Uniform Triangular Prism Photonic Crystal2021
- Author(s)
  Joosun Yun, Tsung-Tse Lin, and Hideki Hirayama
- Journal Title
  
  Journal of Lightwave Technology
  
  Volume: submitted
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04251
[Journal Article] Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters2020
- Author(s)
  Khan M Ajmal、Bermundo Juan Paolo、Ishikawa Yasuaki、Ikenoue Hiroshi、Fujikawa Sachie、Matsuura Eriko、Kashima Yukio、Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
- Journal Title
  
  Nanotechnology
  
  Volume: 32 Issue: 5 Pages: 055702-055702
- DOI
  10.1088/1361-6528/abbddb
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs2020
- Author(s)
  Khan M. Ajmal、Itokazu Yuri、Maeda Noritoshi、Jo Masafumi、Yamada Yoichi、Hirayama Hideki
- Journal Title
  
  ACS Applied Electronic Materials
  
  Volume: 2 Issue: 7 Pages: 1892-1907
- DOI
  10.1021/acsaelm.0c00172
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428
[Journal Article] Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED2020
- Author(s)
  Khan M. Ajmal、Takeda Ryohei、Yamada Yoichi、Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
- Journal Title
  
  Optics Letters
  
  Volume: 45 Issue: 2 Pages: 495-498
- DOI
  10.1364/ol.376894
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06428, KAKENHI-PLANNED-16H06420
[Journal Article] Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells2020
- Author(s)
  Murotani Hideaki、Miyoshi Hiroyuki、Takeda Ryohei、Nakao Hiroki、Ajmal Khan M.、Maeda Noritoshi、Jo Masafumi、Hirayama Hideki、Yamada Yoichi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 128 Issue: 10 Pages: 105704-105704
- DOI
  10.1063/5.0015554
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04585, KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428
[Journal Article] Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light2020
- Author(s)
  M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, and Hideki Hirayama
- Journal Title
  
  Optical Materials
  
  Volume: 105 Pages: 109878-109878
- DOI
  10.1016/j.optmat.2020.109878
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Journal Article] High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells2020
- Author(s)
  Murotani Hideaki、Tanabe Ryohei、Hisanaga Keisuke、Hamada Akira、Beppu Kanta、Maeda Noritoshi、Khan M. Ajmal、Jo Masafumi、Hirayama Hideki、Yamada Yoichi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 16 Pages: 162106-162106
- DOI
  10.1063/5.0027697
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04585, KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428
[Journal Article] Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light2020
- Author(s)
  M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda, and Hideki Hirayama
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 3
- DOI
  10.1063/1.5134698
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Journal Article] Nonradiative recombination centers in deep UV-wavelength AlGaN quantum wells detected by below-gap excitation light2019
- Author(s)
  Hossain M. Ismail、Itokazu Yuri、Kuwaba Shunsuke、Kamata Norihiko、Maeda Noritoshi、Hirayama Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCB37-SCCB37
- DOI
  10.7567/1347-4065/ab1069
- NAID
  210000156272
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-18K04954
[Journal Article] Parasitic transport paths in two-well scattering-assisted terahertz quantum cascade lasers2019
- Author(s)
  Li Wang, Tsung-Tse Lin, Ke Wang, and Hideki Hirayama
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 8 Pages: 082003-082003
- DOI
  10.7567/1882-0786/ab2b56
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes2019
- Author(s)
  Itokazu Yuri、Kuwaba Shunsuke、Jo Masafumi、Kamata Norihiko、Hirayama Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1056-SC1056
- DOI
  10.7567/1347-4065/ab1126
- NAID
  210000156252
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Influence of Undoped‐AlGaN Final Barrier of MQWs on the Performance of Lateral‐Type UVB LEDs2019
- Author(s)
  Ajmal Khan Muhammad、Matsuura Eriko、Kashima Yukio、Hirayama Hideki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 216 Issue: 18 Pages: 1970059-1970059
- DOI
  10.1002/pssa.201970059
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Controlled crystal orientations of semipolar AlN grown on an m-plane sapphire by MOCVD2019
- Author(s)
  Jo Masafumi、Itokazu Yuri、Kuwaba Shunsuke、Hirayama Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1031-SC1031
- DOI
  10.7567/1347-4065/ab0f1c
- NAID
  210000156090
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperatures2019
- Author(s)
  Li Wang, Tsung-Tse Lin, Ke Wang, Thomas Grange, Stefan Birner, and Hideki Hirayama
- Journal Title
  
  Scientific reports
  
  Volume: 9 Issue: 1 Pages: 9446-9446
- DOI
  10.1038/s41598-019-45957-8
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] 13 mW operation of a 295?310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications2019
- Author(s)
  Khan M. Ajmal、Maeda Noritoshi、Jo Masafumi、Akamatsu Yuki、Tanabe Ryohei、Yamada Yoichi、Hirayama Hideki
- Journal Title
  
  Journal of Materials Chemistry C
  
  Volume: 7 Issue: 1 Pages: 143-152
- DOI
  10.1039/c8tc03825b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PLANNED-16H06428
[Journal Article] Random electric field induced by interface roughness in GaN/AlGaN multiple quantum wells2019
- Author(s)
  Joosun Yun, Dong-Pyo Han, and Hideki Hirayama
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 12 Pages: 124005-124005
- DOI
  10.7567/1882-0786/ab548a
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04251, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing2019
- Author(s)
  Mogami Yosuke、Motegi Shogo、Osawa Atsushi、Osaki Kazuto、Tanioka Yukitake、Maeoka Atsushi、Jo Masafumi、Maeda Noritoshi、Yaguchi Hiroyuki、Hirayama Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1029-SC1029
- DOI
  10.7567/1347-4065/ab1066
- NAID
  210000156092
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Overcoming the current injection issue in the 310 nm band AlGaN UVB light-emitting diode2019
- Author(s)
  Khan M. Ajmal、Matsuura Eriko、Kashima Yukio、Hirayama Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SA Pages: SAAD01-SAAD01
- DOI
  10.7567/1347-4065/ab460b
- NAID
  210000157156
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD2019
- Author(s)
  Fujikawa Sachie、Ishiguro Toshiya、Wang Ke、Terashima Wataru、Fujishiro Hiroki、Hirayama Hideki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 510 Pages: 47-49
- DOI
  10.1016/j.jcrysgro.2018.12.027
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14113, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates2019
- Author(s)
  Matsumoto Takuma、Ajmal Khan M、Maeda Noritoshi、Fujikawa Sachie、Kamata Norihiko、Hirayama Hideki
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 52 Issue: 11 Pages: 115102-115102
- DOI
  10.1088/1361-6463/aaf60a
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] AlGaN深紫外LDの実現へ向けた最近の進展2019
- Author(s)
  平山秀樹、前田哲利、M. Ajmal Khan、只友一行、岡田成仁、山田陽一
- Journal Title
  
  レーザー研究
  
  Volume: 47 Pages: 196-203
- NAID
  130008074017
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] High output power THz quantum cascade lasers and their temperature dependent performance2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang, and H. Hirayama
- Journal Title
  
  Journal of Infrared and Millimeter Waves
  
  Volume: 37 Pages: 513-522
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Optimization of terahertz quantum cascade lasers by suppressing carrier leakage channel via high-energy state2018
- Author(s)
  Lin Tsung-Tse、Wang Li、Wang Ke、Grange Thomas、Hirayama Hideki
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 11 Pages: 112702-112702
- DOI
  10.7567/apex.11.112702
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-17K14113
[Journal Article] Improving the Light-Extraction Efficiency of AlGaN DUV-LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector2018
- Author(s)
  Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 215 Issue: 8 Pages: 1700436-1700436
- DOI
  10.1002/pssa.201700436
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Effects of Ga Supply on the Growth of (11-22) AlN on m-Plane (10-10) Sapphire Substrates2018
- Author(s)
  Jo Masafumi、Hirayama Hideki
- Journal Title
  
  physica status solidi (b)
  
  Volume: 255 Issue: 5 Pages: 1700418-1700418
- DOI
  10.1002/pssb.201700418
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes2018
- Author(s)
  Maeda Noritoshi、Yun Joosun、Jo Masafumi、Hirayama Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FH08-04FH08
- DOI
  10.7567/jjap.57.04fh08
- NAID
  210000148946
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
- Author(s)
  Wang Ke、Grange Thomas、Lin Tsung-Tse、Wang Li、Jehn Zoltan、Birner Stefan、Yun Joosun、Terashima Wataru、Hirayama Hideki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 6 Pages: 061109-061109
- DOI
  10.1063/1.5029520
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04251, KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-17K14113, KAKENHI-PROJECT-15K13982
[Journal Article] Controlling loss of waveguides for potential GaN terahertz quantum cascade lasers by tuning the plasma frequency of doped layers2018
- Author(s)
  Wang Ke、Lin Tsung-Tse、Wang Li、Terashima Wataru、Hirayama Hideki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 8 Pages: 081001-081001
- DOI
  10.7567/jjap.57.081001
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04296, KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-17K14113, KAKENHI-PROJECT-15K13982
[Journal Article] Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire2018
- Author(s)
  Jo Masafumi、Morishita Naoki、Okada Narihito、Itokazu Yuri、Kamata Norihiko、Tadatomo Kazuyuki、Hirayama Hideki
- Journal Title
  
  AIP Advances
  
  Volume: 8 Issue: 10 Pages: 105312-105312
- DOI
  10.1063/1.5052294
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] 殺菌用・深紫外LEDの進展2018
- Author(s)
  平山秀樹
- Journal Title
  
  月刊バイオインダストリー
  
  Volume: 35 Pages: 63-70
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Improving the Efficiency of AlGaN Deep-UV LEDs by Using Highly Reflective Ni/Al p-Type Electrodes2018
- Author(s)
  Maeda Noritoshi、Jo Masafumi、Hirayama Hideki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 215 Issue: 8 Pages: 1700435-1700435
- DOI
  10.1002/pssa.201700435
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] 殺菌用・深紫外LEDの進展2018
- Author(s)
  平山秀樹
- Journal Title
  
  ファインセラミックスレポート
  
  Volume: 36 Pages: 118-121
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Reflectance of a reflective photonic crystal p-contact layer for improving the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes2018
- Author(s)
  Yun Joosun、Kashima Yukio、Hirayama Hideki
- Journal Title
  
  AIP Advances
  
  Volume: 8 Issue: 12 Pages: 125126-125126
- DOI
  10.1063/1.5062603
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency2017
- Author(s)
  T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki and H. Hirayama
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 3 Pages: 031002-031002
- DOI
  10.7567/apex.10.031002
- NAID
  210000135778
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate2017
- Author(s)
  Tran Binh Tinh、Hirayama Hideki
- Journal Title
  
  Scientific Reports
  
  Volume: 7 Issue: 1 Pages: 12176-12176
- DOI
  10.1038/s41598-017-11757-1
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7?THz2017
- Author(s)
  Lin Tsung-Tse、Hirayama Hideki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 215 Issue: 8 Pages: 1700424-1700424
- DOI
  10.1002/pssa.201700424
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-15K13982
[Journal Article] Design for Stable Lasing of an Indirect Injection THz Quantum Cascade Laser Operating at Less Than 2 THz2017
- Author(s)
  T. T. Lin and H. Hirayama
- Journal Title
  
  International Journal of Materials Science and Applications
  
  Volume: 6 Issue: 5 Pages: 230-230
- DOI
  10.11648/j.ijmsa.20170605.11
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer2017
- Author(s)
  Kashima Yukio、Maeda Noritoshi、Matsuura Eriko、Jo Masafumi、Iwai Takeshi、Morita Toshiro、Kokubo Mitsunori、Tashiro Takaharu、Kamimura Ryuichiro、Osada Yamato、Takagi Hideki、Hirayama Hideki
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 012101-012101
- DOI
  10.7567/apex.11.012101
- NAID
  210000136062
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes2017
- Author(s)
  Hirayama Hideki、Kamata Norihiko、Tsubaki Kenji
- Journal Title
  
  III-Nitride Based Light Emitting Diodes and Applications
  
  Volume: 133 Pages: 267-299
- DOI
  10.1007/978-981-10-3755-9_10
- ISBN
  9789811037542, 9789811037559
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Investigation of the light-extraction efficiency in 280 nm AlGaN-based light-emitting diodes having a highly transparent p-AlGaN contact layer2017
- Author(s)
  J. Yun and H. Hirayama
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 121 Issue: 1
- DOI
  10.1063/1.4973493
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Structural and electrical properties of semipolar (11-22) AlGaN grown on m -plane (1-100) sapphire substrates2017
- Author(s)
  Masafumi Jo, Issei Oshima, Takuma Matsumoto, Noritoshi Maeda, Norihiko Kamata and Hideki Hirayama
- Journal Title
  
  Phys. Status Solidi (c)
  
  Volume: - Issue: 8
- DOI
  10.1002/pssc.201600248
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes2017
- Author(s)
  Hirayama H.
- Journal Title
  
  Semiconductors and Semimetals
  
  Volume: 96 Pages: 85-120
- DOI
  10.1016/bs.semsem.2016.11.002
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] AlGaN紫外LEDの進展と展望2016
- Author(s)
  平山秀樹
- Journal Title
  
  照明学会誌
  
  Volume: 100 Pages: 115-118
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05733
[Journal Article] Performance improvement of AlN crystal quanlity grown on patterned Si (111) substrate for deep UV LED applications2016
- Author(s)
  B. T. Tran, N. Maeda, N. Jo, D. Inoue, T. Kikitsu and H. Hirayama
- Journal Title
  
  Scientific Report
  
  Volume: 6 Issue: 1 Pages: 35681-35681
- DOI
  10.1038/srep35681
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] High-Quality AlN Template Grown on a Patterned Si (111) Substrate2016
- Author(s)
  B. T. Tran, H. Hirayama, M. Jo, N. Maeda, D. Inoue, T. Kikitsu
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: - Pages: 225-229
- DOI
  10.1016/j.jcrysgro.2016.12.100
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
[Journal Article] テラヘルツ量子カスケードレーザーの進展2016
- Author(s)
  平山秀樹
- Journal Title
  
  レーザー研究
  
  Volume: 44 Pages: 520-526
- NAID
  130007957296
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05733
[Journal Article] テラヘルツ量子カスケードレーザーの進展2016
- Author(s)
  平山秀樹
- Journal Title
  
  レーザー研究
  
  Volume: 44 Pages: 520-526
- NAID
  130007957296
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06420
[Journal Article] Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer2016
- Author(s)
  M. Jo, N. Maeda and H. Hirayama
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 1 Pages: 012102-012102
- DOI
  10.7567/apex.9.012102
- NAID
  210000137743
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05733
[Journal Article] Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence2015
- Author(s)
  N. Kamata, A. Z. M. Touhidul Islam, M. Julkarnain, N. Murakoshi, T. Fukuda, and H. Hirayama
- Journal Title
  
  Phys. Status Solidi B
  
  Volume: 252 Issue: 5 Pages: 936-939
- DOI
  10.1002/pssb.201451582
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360005, KAKENHI-PROJECT-25600087
[Journal Article] Growth of non-polar a-plane AlN on r-plane sapphire2015
- Author(s)
  M. Jo and H. Hirayama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FA02-05FA02
- DOI
  10.7567/jjap.55.05fa02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05733
[Journal Article] Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation2015
- Author(s)
  J. Yun, J. I. Shim, H. Hirayama
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 2 Pages: 022104-022104
- DOI
  10.7567/apex.8.022104
- NAID
  210000137382
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] テラヘルツ量子カスケードレーザーの進展と今後の展望2015
- Author(s)
  平山秀樹，寺嶋亘，林宗澤，佐々木美穂
- Journal Title
  
  応用物理
  
  Volume: 84 Pages: 918-923
- NAID
  10031104445
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05733
[Journal Article] Direct growth and controlled coalescence of thick AlN template on micro-circle patterned Si substrate2015
- Author(s)
  B. T. Tran, H. Hirayama, N. Maeda, M. Jo, S. Toyoda and N. Kamata
- Journal Title
  
  Scientific Report
  
  Volume: 5 Issue: 1 Pages: 14734-14734
- DOI
  10.1038/srep14734
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-25600087
[Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep-UV region2014
- Author(s)
  A. Z. M. Touhidul Islam, N. Murakoshi, T. Fukuda, H. Hirayama and N. Kamata
- Journal Title
  
  physica status solidi (c)
  
  Volume: 11 Issue: 3-4 Pages: 832-835
- DOI
  10.1002/pssc.201300405
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region2014
- Author(s)
  A. Z. M. Touhidul Islam, Naoki Murakoshi, Takeshi Fukuda, Hideki Hirayama, and Norihiko Kamata
- Journal Title
  
  Phys. Status Soldi C
  
  Volume: 11 Pages: 832-835
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360005
[Journal Article] 化物LED高効率化のためのナノインプリントとドライエッチングによる微細加工制御技術2014
- Author(s)
  鹿嶋行雄、松浦恵里子、嶋谷聡、小久保光典、田代貴晴、大川貴史、上村隆一郎、長田大和、藤川紗千恵、平山秀樹
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 27-32
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region2014
- Author(s)
  59) A.Z.M.Touhidul Islam,N.Murakoshi,T.Fukuda, H.Hirayama,and N.Kamata
- Journal Title
  
  Phys.Status.Solidi C
  
  Volume: C 11 Pages: 832-835
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360005
[Journal Article] Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes2014
- Author(s)
  H. Hirayama, N. Maeda, S. Fujikawa, S. Toyota and N. Kamata
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 10 Pages: 100209-100209
- DOI
  10.7567/jjap.53.100209
- NAID
  210000144519
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] 高Al組成p型AlGaNコンタクト層を用いた260nm深紫外LED2014
- Author(s)
  定昌史、前田哲利、平山秀樹
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 77-80
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] 素子透明化によるAlGaN深紫外LEDの光取出し効率の高効率化2014
- Author(s)
  平山秀樹、前田哲利、藤川紗知恵、豊田史郎、鎌田憲彦
- Journal Title
  
  OPTRONICS
  
  Volume: 386 Pages: 58-66
- Data Source
  KAKENHI-PROJECT-24360005
[Journal Article] MOCVDを用いたGaN/ALGaNテラヘルツ量子カスケードレーザー（THz-QCL）の作製と7THz発振動作2014
- Author(s)
  豊田史朗,　寺嶋亘,　鎌田憲彦,　平山秀樹
- Journal Title
  
  電子情報通信学会, 信学技報
  
  Volume: ED2014-84 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360005
[Journal Article] 超格子p型AlGaNホール拡散層を用いた深紫外LEDの動作2014
- Author(s)
  前田哲利、定昌史、平山秀樹
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 73-76
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] ウェットエッチングによるサファイア表面加工基板(PSS)を用いた深紫外LED用高品質AlNテンプレートの作製2014
- Author(s)
  金沢裕也、豊田史朗、大島一晟、鎌田憲彦、鹿島行雄、松浦恵里子、嶋谷聡、小久保光典、田代貴晴、大川貴史、上村隆一郎、長田大和、平山秀樹
- Journal Title
  
  信学技報
  
  Volume: 114 Pages: 39-44
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Realization of high-efficiency deep-UV LEDs using transparent p-AlGaN contact layer2014
- Author(s)
  N. Maeda and H. Hirayama
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: No. 11 Pages: 1521-1524
- NAID
  110009887994
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] AlGaN系率紫外LEDの進展2013
- Author(s)
  平山秀樹、藤川紗知恵、鎌田憲彦
- Journal Title
  
  電気学会論文誌C
  
  Volume: Vol. 133 Pages: 1443-1448
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] AlGaN系率紫外LEDの進展2013
- Author(s)
  平山秀樹、藤川紗知恵、鎌田憲彦
- Journal Title
  
  電気学会論文誌　C
  
  Volume: 133 Pages: 1-3
- Data Source
  KAKENHI-PROJECT-24360005
[Journal Article] AlGaN深紫外LEDの高効率化への取り組み2012
- Author(s)
  富田優志、藤川紗千恵、水澤克哉、豊田史朗、鎌田憲彦、平山秀樹
- Journal Title
  
  信学技報
  
  Volume: 112 Pages: 87-92
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] High-efficiency AlGaN deep-UV LEDs fabricated on a- and m-axis oriented c-plane sapphire substrates2012
- Author(s)
  S. Fujikawa, H. Hirayama and N. Maeda
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Pages: 790-793
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate2012
- Author(s)
  N. Maeda, H. Hirayama and S. Fujikawa
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Pages: 810-813
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Characteristics of epitaxial lateral overgrowth AlN templates on (111) Si substrates for AlGaN deep-UV LEDs fabricated on different direction stripe patterns2012
- Author(s)
  T. Mino, H. Hirayama, T. Takano, K. Tsubaki and M. Sugiyama
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Pages: 802-805
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode2012
- Author(s)
  M. Akiba, H. Hirayama, Y. Tomita, Y. Tsukada, N. Maeda, and A. Kamata
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Pages: 806-809
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360005
[Journal Article] Highly-uniform 260 nm-band AlGaN-based deep-ultraviolet light-emitting diodes developed by 2-inch×3 MOVPE system2012
- Author(s)
  T. Mino, H. Hirayama, T. Takano, N. Noguchi and K. Tsubaki
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Pages: 749-752
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode2012
- Author(s)
  M. Akiba, H. Hirayama, Y. Tomita, Y. Tsukada, N. Maeda and A. Kamata
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: 9 Pages: 806-809
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246010
[Journal Article] Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate2011
- Author(s)
  Wataru Terashima, H.Hirayama
- Journal Title
  
  Phys.Status Solidi
  
  Volume: (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate2011
- Author(s)
  W. Terashima and H. Hirayama
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: Vol.8 Pages: 2302-2304
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] Threshold current density reduction by utilizing high-Al-composition barriers in 3.7 THz GaAs/AlGaAs quantum cascade lasers2011
- Author(s)
  T. T. Lin, L. Ying and H. Hirayama
- Journal Title
  
  Appl. Phys. Express
  
  Volume: Vol.5 Pages: 12101-12101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] Threshold current density reduction by utilizing high-Al-composition barriers in 3.7 THz GaAs/AlGaAs quantum cascade lasers2011
- Author(s)
  T.T.Lin, L.Ying, H.Hirayama
- Journal Title
  
  Appl.Phys.Express
  
  Volume: Vol.5 Pages: 12101-12101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] Development of terahertz quantum cascade laser based on III-nitride semiconductors2011
- Author(s)
  W. Terashima and H. Hirayama
- Journal Title
  
  The Review of Laser Engineering
  
  Volume: Vol.39, No.10 Pages: 769-774
- NAID
  10029790290
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] Molwcular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique2011
- Author(s)
  Wataru Terashima, H.Hirayama
- Journal Title
  
  Phys.Status, Solidi A
  
  Volume: (In press)
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] AlGaN系深紫外LEDの進展と展望2011
- Author(s)
  平山秀樹、藤川紗千恵、塚田悠介、鎌田憲彦
- Journal Title
  
  応用物理
  
  Volume: 80(Invited Review) Pages: 319-324
- NAID
  10027969857
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique2011
- Author(s)
  W. Terashima and H. Hirayama
- Journal Title
  
  Phys. Status Solidi A
  
  Volume: Vol.1 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] AlGaN系深紫外LEDの進展と展望(Invited Review)2011
- Author(s)
  平山秀樹, 藤川紗千恵, 塚田悠介, 鎌田憲彦
- Journal Title
  
  応用物理
  
  Volume: Vol.80, No.4 Pages: 319-324
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique2011
- Author(s)
  W.Terashima, H.Hirayama
- Journal Title
  
  Phys.Status Solidi A
  
  Volume: 1 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] 222nm Deep-Ultraviolet AlGaN Quantum WelLight-Emitting Diode with Vertical Emission Properties2010
- Author(s)
  平山秀樹, N.Noguchi, 鎌田憲彦
- Journal Title
  
  Appl.Phys.Exp. 3
  
  Pages: 32102-32102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN LEDs by Using a Multiquantum-Barrier Electron Blocking Layer2010
- Author(s)
  H. Hirayama, Y. Tsukada, T. Maeda, N. Kamata
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer2010
- Author(s)
  H.Hirayama, Y.Tsukada, T.Maeda, N.Kamata
- Journal Title
  
  Appl.Phys.Express 3
  
  Pages: 31002-31002
- NAID
  10027013818
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 深紫外域AlGaN-LEDの高品質化2010
- Author(s)
  鎌田憲彦, 乗松潤, 塚田悠介, 秋葉雅弘, 福田武司, 平山秀樹
- Journal Title
  
  Proc.Human Photonics Forum
  
  Pages: 22-27
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] 222nm Deep-Ultraviolet AlGaN QW Light-Emitting Diode with Vertical Emission Properties2010
- Author(s)
  H. Hirayama, N. Noguchi, N. Kamata
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価2010
- Author(s)
  五十嵐航平、石岡亮、塚田悠介、福田武司、本多善太郎、平山秀樹、鎌田憲彦
- Journal Title
  
  電子情報通信学会技術研究報告(EID2010-31)
  
  Volume: Vol.110,No.404 Pages: 41-44
- NAID
  10027800136
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer2010
- Author(s)
  平山秀樹, 塚田悠介, T.Maeda, 鎌田憲彦
- Journal Title
  
  Appl.Phys.Exp. 3
  
  Pages: 31002-31002
- NAID
  10027013818
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Marked Enhancement in the efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquatum-Barrier Electron Blocking Layer2010
- Author(s)
  H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
- Journal Title
  
  Appl.Phys.Express.3,031002 3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy2010
- Author(s)
  W. Terashima and H. Hirayama
- Journal Title
  
  Appl. Phys. Express
  
  Volume: Vol.3
- NAID
  10027618617
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] 222nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties2010
- Author(s)
  H.Hirayama, N.Noguchi, N.Kamata
- Journal Title
  
  Appl.Phys Express (in press)
- NAID
  10027013951
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs2010
- Author(s)
  平山秀樹, S.Fujikawa, 乗松潤, T.Takano, K.Tsubaki, 鎌田憲彦
- Journal Title
  
  Phys.Stat.Sol.(c) (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] The Utility of Droplet Elimination by Thermal Annealing Technique for Fabrication of GaN/AlGaN Terahertz Quantum Cascade Structure by Radio Frequency Molecular Beam Epitaxy2010
- Author(s)
  W.Terashima, H.Hirayama
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 3
- NAID
  10027618617
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] AlGaN系殺菌用途紫外LEDの進展と今後の展望2010
- Author(s)
  平山秀樹
- Journal Title
  
  表面技術、特集「LED照明と表面技術」
  
  Volume: 61巻9号 Pages: 637-640
- NAID
  10026629249
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] The utility of droplet elimination by thermal annealing technique for fabrication of GaN/AlGaN Terahertz quatum cascade structure by radio frequency molecular beam epitaxy2010
- Author(s)
  Wataru Terashima, H.Hirayama
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 3 Pages: 125501-125501
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Fabrication of Low Threading Dislocation Density ELO-AlN Template for Application to Deep-UV LEDs2009
- Author(s)
  H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
- Journal Title
  
  Phys. Stat. Sol.(c)
  
  Volume: 6, Issue S2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] 222nm single-peaked deep-UV LED with thin AlGaN quantum well layer2009
- Author(s)
  N.Noguchi, 平山秀樹, T.Yatabe, 鎌田憲彦
- Journal Title
  
  Phys.Stat.Sol.(c) 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors2009
- Author(s)
  W.Terashima, H.Hirayama
- Journal Title
  
  Physica Status Solidi(c) 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] 222-282nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire2009
- Author(s)
  平山秀樹, S.Fujikawa, N.Noguchi, 乗松潤, T.Takano, K.Tsubaki, 鎌田憲彦
- Journal Title
  
  Physica Status Solidi A 206
  
  Pages: 1176-1182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors2009
- Author(s)
  W. Terashima, H. Hirayama
- Journal Title
  
  Physica Status Solidi (c) 6(S2)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206004
[Journal Article] Fabrication of low threading dislocation density ELO-AIN template for the application to deep-UV LEDs2009
- Author(s)
  H.Hirayama, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.kamata
- Journal Title
  
  Physica Status Solidi(c) 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors2009
- Author(s)
  W. Terashima and H. Hirayama
- Journal Title
  
  Phys. Status Solidi C
  
  Volume: Vol.6 Pages: 614-617
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] 222nm single-peaked deep-UV LEDE with thin AlGaN quantum well layers2009
- Author(s)
  N.Noguchi, H.Hirayama, T.Yatabe, N.Kamata
- Journal Title
  
  Physica Status Solidi(c) 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN on sapphire2009
- Author(s)
  H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.kamata
- Journal Title
  
  Physica Status Solidi(a) 206
  
  Pages: 1176-1182
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors2009
- Author(s)
  W. Terashima, H. Hirayama
- Journal Title
  
  Physica Status Solidi(c)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206004
[Journal Article] 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire2009
- Author(s)
  H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
- Journal Title
  
  Physica Status Solidi (a)
  
  Volume: 206 Pages: 1176-1182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] 222-282nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AIN template2009
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Proceedings of SPIE 7216
  
  Pages: 7216-58
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Realization of 280nm band AlGaN based UV-LED on large area AlN template with high crystalline quality2009
- Author(s)
  T.Takano, S.Fujikawa, K.Tsubaki, H.Hirayama
- Journal Title
  
  Physica Status Solidi(c) 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN on sapphire2009
- Author(s)
  H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu, T.Takano, K.Tsubaki, N.Kamata
- Journal Title
  
  Physica Status Solidi (a) 206
  
  Pages: 1176-1182
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 222-282nm AlGaN and InAlGaN based deep-UV-LEDs fabricated on high-quality AlN template2009
- Author(s)
  H.Hirayama, N.Noguchi, S.Fujikawa, J.Norimatsu K.Kamata, T.Takano, K.Tsubaki
- Journal Title
  
  SPIE
  
  Pages: 7216-58
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Extremely high efficiency 280nm-band emission from quaternary InAlGaN QWs realized by controlling Si-doped layers2009
- Author(s)
  S.Fujikawa, H.Hirayama, T.Takano, K.Tsubaki
- Journal Title
  
  Physica Status Solidi(c) 6
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Fabrication of low threading dislocation density ELO-AlN template for application to deep-UV LEDs2009
- Author(s)
  H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
- Journal Title
  
  Phys. Stat. Sol.(c)
  
  Volume: Vol.6, Issue S2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] Milliwatt power 270nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template2009
- Author(s)
  H.Hirayama, J.Norimatsu, N.Noguchi, S.Fujikawa, T.Takano, K.Tsubaki, N.Kamata
- Journal Title
  
  Physica Status Solidi(c) 5
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 280nm帯高出力紫外LED2009
- Author(s)
  平山秀樹
- Journal Title
  
  月刊ディスプレー 2月号
  
  Pages: 33-42
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] ELO-AlN テンプレート上に作製した270nm帯 AlGaN 紫外LED2008
- Author(s)
  平山秀樹, 他6名
- Journal Title
  
  電子情報通信学会技術報告 168
  
  Pages: 77-82
- NAID
  110007127194
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Remarkable enhancement of 254-280nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AIN buffer on sapphire2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 2283-2285
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Recent progresses of 220-270nm AlGaN-based deep-UV LEDs2008
- Author(s)
  H. Hirayama
- Journal Title
  
  J. Illum. Engng. Inst. Jpn. 92
  
  Pages: 311-315
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Realization of 340nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 2260-2262
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 226-273 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire2008
- Author(s)
  H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 2969-2969
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method2008
- Author(s)
  H. Hirayama
- Journal Title
  
  Phys. Stat. Solidi QDQ0760
  
  Pages: 1-10
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Quaternary InAIGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method2008
- Author(s)
  H. Hirayama
- Journal Title
  
  Physica Status Solidi(a) (in press)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Ag-metal bonding condition for low-loss double-metal waveguide (DMW) of THz-quantum cascade laser2008
- Author(s)
  L Ying, N. Horiuchi, H. Hirayama
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 7926-7928
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206004
[Journal Article] Realization of 340-nm-band high-output-power (7mW) InAlGaN quantum well ultraviolet light-emitting diode with p-type InAlGaN2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Jap. J. Appl. Phys. 47
  
  Pages: 2941-2944
- NAID
  210000064629
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335nm fabricated by an anti-surfactant method2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 2312-2314
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Realization of 340nm-band high-power UV-LED using p-type InAlGaN2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Journal of light and Visual Environment 32
  
  Pages: 83-37
- NAID
  110006663890
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 27-261nm AlGaN-based deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffers on sapphire2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Journal of Light and Visual Environment 32
  
  Pages: 79-82
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 230nm帯AlGaN紫外LEDの高出力化2008
- Author(s)
  平山秀樹, 他3名
- Journal Title
  
  電子情報通信学会技術報告 167
  
  Pages: 71-76
- NAID
  110007127195
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 227nm AlGaN light-emitting diode with 0.15mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Appl. Phys. Express 1
- NAID
  10025080177
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Improvement of surface roughness and reduction of threading-dislocation density in AlN/AlGaN templates on sapphire by employing trimethylaluminum pulsed supply growth2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 1968-1970
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Remarkable improvement of output power for InAlGaN based ultraviolet LED by improving the crystal quality of AlN/AlGaN templates2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 2102-2104
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire2008
- Author(s)
  H. Hirayama, T. Yatabe, T. Ohashi and N. Kamata
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 2283-2283
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 226-273nm AlGaN deep-ultraviolet light-emitting diodes fabricated on multilayer AlN buffers on sapphire2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 2969-2971
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Quaternary InAIGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by an anti-surfactant method2008
- Author(s)
  H.Hirayama
- Journal Title
  
  Physica Status Solidi(c) 5
  
  Pages: 2312-2315
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] 230-270nm深紫外AlGaN系LEDの進展2008
- Author(s)
  平山秀樹, 他3名
- Journal Title
  
  電気学会論文誌 C 128
  
  Pages: 748-756
- NAID
  10021132357
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Development of 220-270nm AlGaN-based deep UV-LEDs2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Electrical Engineering of Japan 128
  
  Pages: 748-757
- NAID
  110006684469
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density2008
- Author(s)
  H. Hirayama, N. Noguchi, T. Yatabe and N. Kamata
- Journal Title
  
  Appl. Phys. Express 1
  
  Pages: 51101-51101
- NAID
  10025080177
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 340nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers2008
- Author(s)
  H. Hirayama, et al,
- Journal Title
  
  Physica Status Solidi (c) 5
  
  Pages: 2280-2282
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using thin quantum well and AlN buffer with reduced threading dislocation density2008
- Author(s)
  H.Hirayama, N.Noguchi, T.Yatabe, N.Kamata
- Journal Title
  
  Appl.Phys.Express 1
  
  Pages: 51101-51101
- NAID
  10025080177
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 280nm帯 InAlGaN 高出力紫外 LED2008
- Author(s)
  平山秀樹, 他3名
- Journal Title
  
  電子情報通信学会技術報告 169
  
  Pages: 83-88
- NAID
  110007127193
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Ag-metal bonding condition for low-loss double-metal waveguide of terahertz quantum cascade laser2008
- Author(s)
  L Ying, N. Horiuchi, H. Hirayama
- Journal Title
  
  Jap. J. Appl. Phys 47(10)
  
  Pages: 7926-7928
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206004
[Journal Article] 「p-InALGaNと高品質AINを用いた340nm帯高出力LED」2007
- Author(s)
  藤川紗千恵、高野隆好、近藤行廣、平山秀樹
- Journal Title
  
  電子情報通信学会技術研究報告 107
  
  Pages: 29-34
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 231-261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire2007
- Author(s)
  H.Hirayama, T.Yatabe, N.Noguchi, T.Ohashi, N.Kamata
- Journal Title
  
  Appl.Phys.Lett. 91
  
  Pages: 71901-71901
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] "231-261nm AIGaN deep-ultraviolet light-emitting diodes fabri cated on AIN multilayer buffers grown by ammonia pulse-flow method on sapphire"2007
- Author(s)
  H. Hirayama
- Journal Title
  
  Appl. Phys. Lett. 91
  
  Pages: 0719011-3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 「深紫外半導体発光素子およびTHz量子カスケードレーザの開発」2007
- Author(s)
  平山秀樹
- Journal Title
  
  電気学会、光・量子デバイス研究会資料 OQD-07-60
  
  Pages: 1-10
- NAID
  10025660536
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] 231-261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire2007
- Author(s)
  H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata
- Journal Title
  
  Appl. Phys. Lett 91
  
  Pages: 71901-71901
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 「深紫外半導体発光素子およびTHz量子カスケードレーザの開発」2007
- Author(s)
  平山秀樹
- Journal Title
  
  電気学会、光・量子デバイス研究会資料 OQD-07-60
  
  Pages: 1-10
- NAID
  10025660536
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] "250-350nm帯AlGaN系深紫外高輝度LEDの開発"2007
- Author(s)
  平山秀樹、高野隆義、藤川紗千恵、大橋智昭、谷田部透、鎌田憲彦、近藤行廣、
- Journal Title
  
  O plus E Vol.29
  
  Pages: 572-581
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 深紫外半導体発光素子及びTHz量子カスケードレーザの開発2007
- Author(s)
  平山秀樹
- Journal Title
  
  電気学会、光・量子デバイス研究会資料 OQD-07-60
  
  Pages: 1-10
- Data Source
  KAKENHI-PROJECT-19206004
[Journal Article] "230-350nm帯AIGaN系深紫外高輝度LEDの進展と応用"2007
- Author(s)
  平山秀樹
- Journal Title
  
  オプトロニクス(OPTROMICS) 200710月号
  
  Pages: 110-119
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] Influence of residual oxygen impurity in quaternary InAlGaN multiple quantum well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates2006
- Author(s)
  T.Kyono, H.Hirayama et al.
- Journal Title
  
  J. Appl. Phys 99・11
  
  Pages: 1145091-7
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] High-efficiency UV-LEDs using quaternary InAlGaN2006
- Author(s)
  H.Hirayama et al.
- Journal Title
  
  Electrical Engineering in Japan 157・3
  
  Pages: 225-232
- NAID
  210000174185
- Data Source
  KAKENHI-PLANNED-18069014
[Journal Article] 'LED最新技術動向〜性能向上、課題解決集〜、第5章、紫外LEDの短波長化と高効率化の課題と展望2005
- Author(s)
  平山秀樹
- Journal Title
  
  情報機構
  
  Pages: 91-104
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] 窒化物4元混晶を用いた高効率紫外LED2005
- Author(s)
  平山秀樹
- Journal Title
  
  電気学会論文誌C 125
  
  Pages: 160-168
- NAID
  10014301981
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Significant improvements of quantum efficiencies of quaternary InAlGaN UV-LEDs on GaN substrates2005
- Author(s)
  T.Kyono, H.Hirayama, K.Akita, T.Nakamura, K.Ishibashi
- Journal Title
  
  Phys. Stat. Sol.(c) 2, 7
  
  Pages: 2912-2915
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High-efficiency 350 nm-band quaternary InAlGaN- based UV-LED on GaN/sapphire template2005
- Author(s)
  H.Hirayama
- Journal Title
  
  Phys.Stat.Sol.(c) 2
  
  Pages: 2899-2902
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High-efficiency 350 nm-band quaternary InAlGaN- based UV-LED on GaN/sapphire template2005
- Author(s)
  H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
- Journal Title
  
  Phys.Stat.Sol.(c) 2, 7
  
  Pages: 2899-2902
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High-efficiency 350 nm-band quaternary InAlGaN- based UV-LED on GaN/sapphire template2005
- Author(s)
  H.Hirayama
- Journal Title
  
  Phys.Stat.Sol.(c) 2
  
  Pages: 2899-2902
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005
- Author(s)
  H.Hirayama
- Journal Title
  
  J. Appl. Phys. 97
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Significant improvements of quantum efficiencies of quaternary InAlGaN UV-LEDs on GaN substrates2005
- Author(s)
  T.Kyono, H.Hirayama, K.Akita, T.Nakamura, K.Ishibashi
- Journal Title
  
  Phys.Stat.Sol.(c) 2, 7
  
  Pages: 2912-2915
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005
- Author(s)
  H.Hirayama
- Journal Title
  
  J.Appl.Phys. 97
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005
- Author(s)
  H.Hirayama
- Journal Title
  
  J.Appl.Phys. 97
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High-efficiency 350 rm-band quaternary InAIGaN- based UV LED on GaN/sapphire template2005
- Author(s)
  H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
- Journal Title
  
  Phys. Stat. Sol.(c) 2, 7
  
  Pages: 2899-2902
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emittingdiodes2005
- Author(s)
  H.Hirayama
- Journal Title
  
  J.Appl.Phys. 97
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] High-Efficiency UV-LEDs using Quaternary InAlGaN2005
- Author(s)
  H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
- Journal Title
  
  IEEJ, Trans.EIS vol.125, no.2
  
  Pages: 160-168
- NAID
  210000174185
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] 窒化物4元混晶を用いた高効率紫外LED2005
- Author(s)
  平山秀樹
- Journal Title
  
  電気学会論文誌C 125
  
  Pages: 160-168
- NAID
  10014301981
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes2005
- Author(s)
  H.Hirayama
- Journal Title
  
  J. App1. Phys. 97
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] High- Efficiency UV-LEDs using Quaternary InAlGaN2005
- Author(s)
  H.Hirayama, T.Kyono, K.Akita, T.Nakamura, K.Ishibashi
- Journal Title
  
  IEEJ, Trans. EIS vol.125, no.2
  
  Pages: 160-168
- NAID
  210000174185
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Short Wavelength and High- Efficiency Operation of Deep UV LED Using Quaternary InAlGaN2004
- Author(s)
  H.Hirayama, K.Akita, T.Kyono, T.Nakamura, Y.Aoyagi
- Journal Title
  
  The Review of Laser Engineering, Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors Vol.32, no.6
  
  Pages: 402-409
- NAID
  10013161084
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2004
- Author(s)
  平山秀樹
- Journal Title
  
  レーザー研究(「短波長LED・LD、紫外のLED」特集号) 32
  
  Pages: 402-409
- NAID
  10013161084
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Advantage of GaN substrates in InAlGaN quaternary ultraviolet-light-emitting diodes2004
- Author(s)
  K.Akita, T.Nakamura, H.Hirayama
- Journal Title
  
  Jpn.J.Appl.Phys. 43, 12
  
  Pages: 8030-8031
- NAID
  10014215834
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grwon on GaN substrates2004
- Author(s)
  H.Hirayama
- Journal Title
  
  Jpn.J.Appl.Phys 43
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2004
- Author(s)
  平山秀樹
- Journal Title
  
  レーザー研究 32
  
  Pages: 402-409
- NAID
  10013161084
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] 'Quaternary InAlGaN-based UV LEDs, Optoelectronic Devices:III-V Nitres Chaper112004
- Author(s)
  H.Hirayama
- Journal Title
  
  Elsevier
  
  Pages: 285-322
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004
- Author(s)
  H.Hirayama, K.Akita, T.Kyono, T.Nakamura
- Journal Title
  
  Phys. Stat. Sol.(a) 201, 12
  
  Pages: 2639-2643
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Effects of GaN Substrate in Ultraviolet Light-Emitting Diodes2004
- Author(s)
  K.Akita, T.Nakamura, H.Hirayama
- Journal Title
  
  SEI Technical Review Vol.165
  
  Pages: 75-80
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Quaternary InAlGaN based deep UV LED with high-Al-content P-type AlGaN2004
- Author(s)
  H.Hirayama
- Journal Title
  
  Proc.SPIE Int.Soc.Opt.Eng. 5359
  
  Pages: 422-433
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15GS0207
[Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaNUV-LEDs over GaN Substrate2004
- Author(s)
  H.Hirayama et al.
- Journal Title
  
  Phys.Stat.Sol.(a) 201, 12
  
  Pages: 2639-2643
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Effects of GaN Substrates on InA1GaN Quaternary UV LEDs2004
- Author(s)
  K.Akita, T.Nakamura, H.Hirayama
- Journal Title
  
  Phys. Stat. Sol.(a) 201, 12
  
  Pages: 2624-2627
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High-efficiency 352nm Quaternary InAlGaN-based High-efficiency Ultraviolet Light-emitting Diodes Grown on GaN Substrates2004
- Author(s)
  H.Hirayama et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 43, 10A
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004
- Author(s)
  H.Hirayama
- Journal Title
  
  Proc.SPIE Int.Soc.Opt.Eng. 5539
  
  Pages: 422-433
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGAN2004
- Author(s)
  H.Hirayama et al.
- Journal Title
  
  Proc.SPIE.Int.Soc.Opt.Eng. 5359
  
  Pages: 422-433
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Short Wavelength and High- Efficiency Operation of Deep UV LED Using Quaternary InAlGaN2004
- Author(s)
  H.Hirayama, K.Akita, T.Kyono, T.Nakamura, Y.Aoyagi
- Journal Title
  
  The Review of Laser Engineering, Special Issue on Present Status and Future Prospect of Ultraviolet LEDs and LDs Based on Nitride Semiconductors Vol.32, no.6
  
  Pages: 402-409
- NAID
  10013161084
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004
- Author(s)
  H.Hirayama
- Journal Title
  
  Phys.Stat.Sol.(a) 201
  
  Pages: 2639-2643
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004
- Author(s)
  H.Hirayama, K.Akita, T.Kyono, T.Nakamura
- Journal Title
  
  Phys.Stat.Sol.(a) 201, 12
  
  Pages: 2639-2643
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Growth and Annealing Condition of high Al content p-type AlGaN for deep UV-LEDs2004
- Author(s)
  T.Obata, H.Hirayama et al.
- Journal Title
  
  Phys.Stat.Sol.(a) 201, 12
  
  Pages: 2803-2807
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Advantage of GaN substrates in InAlGaN quaternary ultraviolet- light- emitting diodes2004
- Author(s)
  K.Akita, T.Nakamura, H.Hirayama
- Journal Title
  
  Jpn. J. Appl. Phys. 43, 12
  
  Pages: 8030-8031
- NAID
  10014215834
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates2004
- Author(s)
  H.Hirayama
- Journal Title
  
  Jpn.J.Appl.Phys 43
- NAID
  10013611337
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures2004
- Author(s)
  S.Anceau, P.Lefebvre, T.Suski, S.P.Lepkowski, H.Teisseyre, L.H.Dmowski, L.Konczewicz, A.Kaminska, A.Suchocki, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Phys.Stat.Sol.(a) vol.201, no.2
  
  Pages: 190-194
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates2004
- Author(s)
  H.Hirayama, K Akita, T.Kyono, T.Nakamura, K.Ishibashi
- Journal Title
  
  Jpn. J. Appl. Phys. 43, 10A
- NAID
  10013611337
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Milliwatt Power 350-nm-band Quaternary InAlGaN UV-LEDs over GaN Substrate2004
- Author(s)
  H.Hirayama
- Journal Title
  
  Phys.Stat.Sol.(c) 201
  
  Pages: 2639-2643
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] High-efficiency 352 nm quaternary InAlGaN-based ultraviolet light-emitting diodes grown on GaN substrates2004
- Author(s)
  H.Hirayama, K.Akita, T.Kyono, T.Nakamura, K.Ishibashi
- Journal Title
  
  Jpn.J.Appl.Phys. 43, 10A
- NAID
  10013611337
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Effects of GaN Substrates on InAlGaN Quaternary UV LEDs2004
- Author(s)
  K.Akita, T.Nakamura, H.Hirayama
- Journal Title
  
  Phys.Stat.Sol.(a) 201, 12
  
  Pages: 2624-2627
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Effects of GaN Substrate in Ultraviolet Light-Emitting Diodes2004
- Author(s)
  K.Akita, T.Nakamura, H.Hirayama
- Journal Title
  
  SEI Technical Review Vol.165
  
  Pages: 75-80
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Surprisingly low built-in electric fields in quaternary AlInGar heterostructures2004
- Author(s)
  S.Anceau, P.Lefebvre, T.Suski, S.P.Lepkowski, H.Teisseyre, L.H.Dmowski, L.Konczewicz, A.Kaminska, A.Suchocki, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Phys. Stat. Sol.(a) vol.201 no.2
  
  Pages: 190-194
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004
- Author(s)
  H.Hirayama, Y.Aoyagi
- Journal Title
  
  Proc.SPIE Int.Soc.Opt.Eng. 5359
  
  Pages: 422-433
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2004
- Author(s)
  平山秀樹
- Journal Title
  
  レーザー研究 32
  
  Pages: 402-409
- NAID
  10013161084
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs2004
- Author(s)
  T.Obata, H.Hirayama, Y.Aoyagi, K.Ishibashi
- Journal Title
  
  Phys. Stat. Sol.(a) 201, 12
  
  Pages: 2803-2807
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Advantage of GaN Substrates in InAlGaN Quaternary Ultraviolet Light-emitting Diodes2004
- Author(s)
  K.Akita, H.Hirayama et al.
- Journal Title
  
  Jpn.J.Appl.Phys. 43, 12
  
  Pages: 8030-8031
- NAID
  10014215834
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs2004
- Author(s)
  T.Obata, H.Hirayama, Y.Aoyagi, K.Ishibashi
- Journal Title
  
  Phys.Stat.Sol.(a) 201, 12
  
  Pages: 2803-2807
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004
- Author(s)
  H.Hirayama
- Journal Title
  
  Proc.SPIE Int.Soc.Opt.Eng. 5359
  
  Pages: 422-433
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Quaternary InAlGaN based Deep UV LED with High-Al-content p-type AlGaN2004
- Author(s)
  H.Hirayama, Y.Aoyagi
- Journal Title
  
  Proc. SPIE Int. Soc. Opt. Eng. 5359
  
  Pages: 422-433
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Effects of GaN Substrates in InAlGaN Quaternary UV-LEDs2004
- Author(s)
  K.Akita, T.Nakamura, H.Hirayama
- Journal Title
  
  Phys.Stat.Sol.(a) 201, 12
  
  Pages: 2624-2627
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Determination of Built-in Electric Fields in Quaternary InAlGaN Heterostructures2003
- Author(s)
  H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Appl.Phys.Letters vol.82, no.10
  
  Pages: 1541-1543
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2003
- Author(s)
  平山秀樹
- Journal Title
  
  電子情報通信学会技術研究報告 103
  
  Pages: 13-18
- NAID
  10013161084
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Determination of Built-in Electric Fields in Quaternary InAlGaN Heterostructures2003
- Author(s)
  H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Appl. Phys. Letters vol.82, no.10
  
  Pages: 1541-1543
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Recent Progress of UV-LEDs using Quaternary InAlGaN-Toward Shorter Wavelength and High-Efficiency Operation-2003
- Author(s)
  H.Hirayama, K.Akita, T.Nakamura, M.Kiyama, Y.Aoyagi
- Journal Title
  
  Technical Report of IEICE ED2003-134
- NAID
  110003174988
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Recent Progress of UV LEDs-using Quaternary InAlGaN-Toward Shorter Wavelength and High-Efficiency Operation--2003
- Author(s)
  H.Hirayama, K.Akita, T.Nakamura, M.Kiyama, Y.Aoyagi
- Journal Title
  
  Technical Report of IEICE. ED2003-134
- NAID
  110003174988
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] InAlGaN4元混晶を用いた紫外LEDの短波長化と高出力化2003
- Author(s)
  平山秀樹
- Journal Title
  
  電子情報通信学会技術研究報告 103
  
  Pages: 13-18
- NAID
  10013161084
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High-efficiency UV-emission at 345nm from InAlGaN light-emitting diodes2002
- Author(s)
  A.Kinoshita, H.Hirayama, T.Yamabi, A.Hirata, Y.Aoyagi
- Journal Title
  
  GaN and Related Alloys-2001, Mater. Res. Soc. 693
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures2002
- Author(s)
  H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Phys.Stat.Sol.(b) vol.234, no.3
  
  Pages: 764-768
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High Doped p-Type GaN Grown by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Material Research Society Symposium Proceeding Vol.719
  
  Pages: 3-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Fabrication of Low Threading Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices2002
- Author(s)
  H.Hirayama, M.Ainoya, A.Kinoshita, A.Hirata, Y.Aoyagi
- Journal Title
  
  Appl.Phys.Lett. vol.80, no.12
  
  Pages: 2057-2059
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] High Doped 'p-Type GaN Grown by Alternative Co-Doping Technique2002
- Author(s)
  S.Iwai, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Material Research Society Symposium Proceeding Vol.719
  
  Pages: 3-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002
- Author(s)
  H.Hirayama
- Journal Title
  
  Appl.Phys.Lett. 80
  
  Pages: 1589-1591
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Marked enhancement of 320-360nm UV emission in quaternary In_xAl_yGa_<1-x-y> N with In-segregation effect2002
- Author(s)
  H.Hirayama
- Journal Title
  
  Appl.Phys.Lett. 80
  
  Pages: 207-209
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells2002
- Author(s)
  H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
- Journal Title
  
  Appl.Phys.Lett. vol.80, no.1
  
  Pages: 37-39
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002
- Author(s)
  H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
- Journal Title
  
  Appl.Phys.Lett. vol.80, no.9
  
  Pages: 1589-1591
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Marked enhancement of 320-360 nm UV emission in quaternary In_xAl_yGa_<1-x-y>N with In-segregation effect2002
- Author(s)
  H.Hirayama
- Journal Title
  
  Appl.Phys.Lett. 80
  
  Pages: 207-209
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Development of 300 nm Band High-Intensity Ultraviolet (UV) LEDs using Quaternary InAlGaN2002
- Author(s)
  H.Hirayama, A.Kinoshita, Y.Aoyagi
- Journal Title
  
  Oyobuturi Vol.71, No.2
  
  Pages: 204-208
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] 330nm-Band High-Efficiency UV LEDs using Quaternary InAlGaN2002
- Author(s)
  H.Hirayama, Y.Aoyagi
- Journal Title
  
  Japanese Journal of Crystal Growth vol.29, no.3
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Fabrication of Low Threating Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices2002
- Author(s)
  H.Hirayama
- Journal Title
  
  Appl.Phys.Lett. 80
  
  Pages: 2057-2059
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002
- Author(s)
  H.Hirayama
- Journal Title
  
  Appl.Phys.Lett. 80
  
  Pages: 1589-1591
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Marked enhancement of 320-360 nm UV emission in quaternary InxAlyGal-x-yN with In-segregation effect2002
- Author(s)
  H.Hirayama, T.Yamabi, A.Kinoshita, Y.Enomoto, A.Hirata, T.Araki, Y.Nanishi, Y.Aoyagi
- Journal Title
  
  Appl.Phys.Lett. vol.80, no.2
  
  Pages: 207-209
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Fabrication of Low Threading Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices2002
- Author(s)
  H.Hirayama, M.Ainoya, A.Kinoshita, A.Hirata, Y.Aoyagi
- Journal Title
  
  Appl. Phys. Lett. vol.80, no.12
  
  Pages: 2057-2059
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells2002
- Author(s)
  H.Hirayama
- Journal Title
  
  Appl.Phys.Lett. 80
  
  Pages: 37-39
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Effect of thermal annealing on the Pd/Au contact to p-type A10.15Ga0.85N2002
- Author(s)
  B.H.Jun, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Jan. J. Appl. Phys. Vol.41 part 1, no.2A
  
  Pages: 581-582
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells2002
- Author(s)
  H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
- Journal Title
  
  Appl. Phys. Lett. vol.80, no.9
  
  Pages: 1589-1591
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Development of 300 nm Band High-Intensity Ultraviolet(UV) LEDs using Quaternary InAlGaN2002
- Author(s)
  H.Hirayama, A.Kinoshita, Y.Aoyagi
- Journal Title
  
  Oyobuturi Vol.71, No.2
  
  Pages: 204-208
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Investigation of the optimum growth conditions of wide bandgap InAlGaN quaternary for UV-LEDs2002
- Author(s)
  T.Yamabi, A.Kinoshita, H.Hirayama, A.Hirata, Y.Aoyagi
- Journal Title
  
  GaN and Related Alloys-2001, Mater. Res. Soc. 693
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Growth of (In)AlGaN Compound Semiconductors and their Application to 300-nm-Band High-Intensity UV-LEDs2002
- Author(s)
  H.Hirayama, Y.Aoyagi
- Journal Title
  
  The Review of Laser Engineering Vol.30, No.6
  
  Pages: 308-314
- NAID
  130004465336
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Growth of AlN-SiC Solid Solutions by Sequential Supply Epitaxy2002
- Author(s)
  A.Avramescu, H.Hirayama, Y.Aoyagi, S.Tanaka
- Journal Title
  
  J. Crystal Growth vol.234
  
  Pages: 435-439
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters2002
- Author(s)
  H.Hirayama, T.Yamanaka, A.Kinoshita, H.Hiraoka, A.Hirata, Y.Aoyagi
- Journal Title
  
  GaN and Related Alloys-2001, Mater. Res. Soc 693
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] 330nm-Band High-Efficiency UV-LEDs using Quaternary InAlGaN2002
- Author(s)
  H.Hirayama, Y.Aoyagi
- Journal Title
  
  Japanese Journal of Crystal Growth vol.29, no.3
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures2002
- Author(s)
  H.Teisseyre, T.Suski, S.P.Lepkowski, S.Anceau, P.Perlin, P.Lefebvre, L.Konczewicz, H.Hirayama, Y.Aoyagi
- Journal Title
  
  Phys. Stat. Sol.(b) vol.243, no.3
  
  Pages: 764-768
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Marked enhancement of 320-360 nm UV emission in quaternary InxAlyGal-x-yN with In-segregation effect2002
- Author(s)
  H.Hirayama, T.Yamabi, A.Kinoshita, Y.Enomoto, A.Hirata, T.Araki, Y.Nanishi, Y.Aoyagi
- Journal Title
  
  Appl. Phys. Lett. vol.80, no.2
  
  Pages: 207-209
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] InAlGaN4元混晶を用いた330nm帯高効率紫外LED2002
- Author(s)
  平山秀樹
- Journal Title
  
  日本結晶成長学会誌 29
  
  Pages: 18-26
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Journal Article] Growth of (In)AlGaN Compound Semiconductors and their Application to 300-nm-Band High-Intensity UV-LEDs2002
- Author(s)
  H.Hirayama, Y.Aoyagi
- Journal Title
  
  The Review of Laser Engineering Vol.30, No.6
  
  Pages: 308-314
- NAID
  130004465336
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells2002
- Author(s)
  H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi
- Journal Title
  
  Appl. Phys. Lett. vol.80 no.2
  
  Pages: 37-39
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] InAlGaN4元混晶を用いた330nm帯高効率紫外LED2002
- Author(s)
  平山秀樹
- Journal Title
  
  日本結晶成長学会誌 29
  
  Pages: 18-26
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] 340nm-band bright UV-LEDs using Quaternary InAlGaN active region2001
- Author(s)
  H.Hirayama, A.Kinoshita, M.Ainoya, T.Yamanaka, A.Hirata, Y.Aoyagi
- Journal Title
  
  Institute of Physics (IOP) Conference Series No.170: Chapter 2
  
  Pages: 195-200
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] (In)AlGaN窒化物混晶の結晶成長と300nm帯紫外高輝度LEDへの応用2001
- Author(s)
  平山秀樹
- Journal Title
  
  レーザー研究 30
  
  Pages: 308-314
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] InAlGaN4元混晶を用いた300nm帯高輝度紫外LED2001
- Author(s)
  平山秀樹
- Journal Title
  
  月刊ディスプレー(テクノタイムズ社) 13年8月号
  
  Pages: 7-12
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] 短波長光デバイス「紫外LED」2001
- Author(s)
  平山秀樹
- Journal Title
  
  光産業技術振興協会 13年度版
  
  Pages: 19-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] 340nm-band bright UV-LEDs using Quaternary InAlGaN active region2001
- Author(s)
  H.Hirayama
- Journal Title
  
  Institute of Physics (IOP) Conference Series 170
  
  Pages: 195-200
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] InAlGaN4元混晶を用いた330-350nm帯高効率紫外LED2001
- Author(s)
  平山秀樹
- Journal Title
  
  電子情報通信学会技術報告 ED2001-134
  
  Pages: 49-54
- NAID
  110003199708
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Journal Article] pontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate
- Author(s)
  W.Terashima, H.Hirayama
- Journal Title
  
  Phys.Status Solidi.
  
  Volume: (掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246005
[Journal Article] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価
- Author(s)
  五十嵐航平, 石岡亮, 塚田悠介, 福田武司, 本多善太郎, 平山秀樹, 鎌田憲彦
- Journal Title
  
  電子情報通信学会EID2010-31
  
  Pages: 41-44
- NAID
  10027800136
- Data Source
  KAKENHI-PROJECT-21360003
[Journal Article] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN
- Author(s)
  H. Hirayama, N. Noguchi, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki and N. Kamata
- Journal Title
  
  physica Status Solidi (a) in press
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 量子カスケードレーザー素子2020
- Inventor(s)
  平山秀樹，王利
- Industrial Property Rights Holder
  理化学研究所
- Industrial Property Rights Type
  特許
- Filing Date
  2020
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] Quantum cascade laser element2020
- Inventor(s)
  王利，林宗澤，王科，平山秀樹
- Industrial Property Rights Holder
  RIKEN
- Industrial Property Rights Type
  特許
- Filing Date
  2020
- Overseas
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] 深紫外ＬＥＤ装置及びその製造方法2019
- Inventor(s)
  平山秀樹，前田哲利，鹿嶋行雄（他
- Industrial Property Rights Holder
  理化学研究所，丸文（他
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Overseas
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] 深紫外ＬＥＤ装置及びその製造方法2019
- Inventor(s)
  平山秀樹，前田哲利，鹿嶋行雄（他
- Industrial Property Rights Holder
  理化学研究所，丸文（他
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Overseas
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] ＡｌＮバッファー層を備えるテンプレート基板および窒化物半導体素子ならびにそれらの製造方法2019
- Inventor(s)
  平山秀樹，定昌史，前田哲利，大澤篤史，前岡淳史
- Industrial Property Rights Holder
  理化学研究所，株式会社SCREENホールディングス
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] 深紫外ＬＥＤ装置及びその製造方法2019
- Inventor(s)
  平山秀樹，前田哲利，鹿嶋行雄（他
- Industrial Property Rights Holder
  理化学研究所，丸文（他
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Overseas
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] 低転位ＡｌＮの製造方法及びそれに用いる種基板2019
- Inventor(s)
  平山秀樹，岡田成仁，只友一行
- Industrial Property Rights Holder
  理化学研究所，山口大学
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] 深紫外ＬＥＤ装置及びその製造方法2019
- Inventor(s)
  平山秀樹，前田哲利，鹿嶋行雄（他
- Industrial Property Rights Holder
  理化学研究所，丸文（他
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Overseas
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] 量子カスケードレーザー素子2018
- Inventor(s)
  王利，林宗澤，平山秀樹
- Industrial Property Rights Holder
  王利，林宗澤，平山秀樹
- Industrial Property Rights Type
  特許
- Filing Date
  2018
- Data Source
  KAKENHI-PROJECT-15H05733
[Patent] 量子カスケードレーザー素子2018
- Inventor(s)
  王利，林宗澤，平山秀樹
- Industrial Property Rights Holder
  王利，林宗澤，平山秀樹
- Industrial Property Rights Type
  特許
- Filing Date
  2018
- Data Source
  KAKENHI-PLANNED-16H06420
[Patent] 窒化物半導体量子カスケードレーザー2015
- Inventor(s)
  平山秀樹，寺嶋亘
- Industrial Property Rights Holder
  平山秀樹，寺嶋亘
- Industrial Property Rights Type
  特許
- Filing Date
  2015-08-11
- Overseas
- Data Source
  KAKENHI-PROJECT-15H05733
[Patent] 窒化物半導体量子カスケードレーザー2015
- Inventor(s)
  平山秀樹，寺嶋亘
- Industrial Property Rights Holder
  平山秀樹，寺嶋亘
- Industrial Property Rights Type
  特許
- Filing Date
  2015-08-11
- Overseas
- Data Source
  KAKENHI-PROJECT-15H05733
[Patent] 窒化物半導体量子カスケードレーザー2015
- Inventor(s)
  平山秀樹，寺嶋亘
- Industrial Property Rights Holder
  平山秀樹，寺嶋亘
- Industrial Property Rights Type
  特許
- Filing Date
  2015-07-28
- Data Source
  KAKENHI-PROJECT-15H05733
[Patent] 半導体発光素子及び製造方法2013
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  平山秀樹
- Industrial Property Rights Type
  特許
- Filing Date
  2013-10-15
- Data Source
  KAKENHI-PROJECT-24246010
[Patent] 結合ピラーAlNバッファーを用いた高効率深紫外発光素子2012
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  平山秀樹
- Industrial Property Rights Type
  特許
- Filing Date
  2012-11-02
- Data Source
  KAKENHI-PROJECT-24246010
[Patent] 窒化物半導体多重量子構造を有する発光素子及びその製造方法2010
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Filing Date
  2010-02-24
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 光半導体素子及びその製造方法2010
- Inventor(s)
  平山秀樹, 大橋智明, 鎌田憲彦
- Industrial Property Rights Holder
  平山秀樹, 大橋智明, 鎌田憲彦
- Acquisition Date
  2010-06-25
- Data Source
  KAKENHI-PROJECT-21360003
[Patent] 光半導体発光素子及びその製造方法2010
- Inventor(s)
  平山秀樹、大橋智昭、鎌田憲彦
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Acquisition Date
  2010-06-25
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 窒化物半導体多重量子障壁を有する発光素子及びその製造法2010
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  理研
- Industrial Property Number
  2010-038912
- Filing Date
  2010-02-24
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 窒化物半導体層の製造方法、窒化物半導体発光素子の製造方法および窒化物半導体発光素子2009
- Inventor(s)
  平山秀樹, 藤川紗千恵, 椿健治, 高野隆好
- Industrial Property Rights Holder
  独立行政法人理化学研究所, パナソニック電工(株)
- Industrial Property Number
  2009-104408
- Filing Date
  2009-04-22
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 光半導体素子及びその製造方法2009
- Inventor(s)
  平山秀樹, 柴田智彦
- Industrial Property Rights Holder
  独立行政法人理化学研究所, DOWAエレクトロニクス(株)
- Filing Date
  2009-08-28
- Overseas
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 窒化物半導体発光素子2009
- Inventor(s)
  平山秀樹, 藤川紗千恵, 椿健治, 高野隆好
- Industrial Property Rights Holder
  独立行政法人理化学研究所, パナソニック電工(株)
- Industrial Property Number
  2009-104407
- Filing Date
  2009-04-22
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 発光素子形成用複合基板及びその製造方法2008
- Inventor(s)
  平山秀樹、古内史人
- Industrial Property Rights Holder
  理化学研究所、宇部興産株式会社
- Filing Date
  2008-09-03
- Overseas
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 発光素子形成用複合基板及びその製造方法2008
- Inventor(s)
  平山秀樹、古内史人
- Industrial Property Rights Holder
  理化学研究所、宇部興産株式会社
- Filing Date
  2008-09-04
- Overseas
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 1.「光半導体素子及びその製造方法」2007
- Inventor(s)
  平山秀樹、大橋智昭、鎌田憲彦
- Industrial Property Rights Holder
  平山秀樹、大橋智昭、鎌田憲彦
- Industrial Property Number
  2007-219890
- Filing Date
  2007-08-27
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 2.「半導体発光素子及びその製造方法」2007
- Inventor(s)
  平山秀樹、大橋智昭、鎌田憲彦
- Industrial Property Rights Holder
  平山秀樹、大橋智昭、鎌田憲彦
- Industrial Property Number
  2007-219910
- Filing Date
  2007-08-27
- Data Source
  KAKENHI-PLANNED-18069014
[Patent] 半導体発光素子2004
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Industrial Property Number
  2004-007325
- Filing Date
  2004-01-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Patent] 半導体発光素子2004
- Inventor(s)
  平山秀樹, 京野孝史
- Industrial Property Rights Holder
  理研, 住友電工
- Industrial Property Number
  2004-193809
- Filing Date
  2004-06-30
- Data Source
  KAKENHI-PROJECT-14205006
[Patent] 半導体発光素子2004
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Industrial Property Number
  2004-007325
- Filing Date
  2004-01-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Patent] 発光素子及びその製造方法2003
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Industrial Property Number
  2003-296474
- Filing Date
  2003-08-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Patent] p型半導体を用いた紫外発光素子2003
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Industrial Property Number
  2003-017397
- Filing Date
  2003-01-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Patent] p型半導体を用いた紫発光素子2003
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Industrial Property Number
  2003-017397
- Filing Date
  2003-01-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13355001
[Patent] 発光素子及びその製造方法2003
- Inventor(s)
  平山秀樹
- Industrial Property Rights Holder
  独立行政法人理化学研究所
- Industrial Property Number
  2003-296474
- Filing Date
  2003-08-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14205006
[Presentation] GaAs及びGaN系テラヘルツ量子カスケードレーザの進展2021
- Author(s)
  平山秀樹、林宗澤、王利、王科、陳明曦
- Organizer
  第68回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] High-power AlGaN UVC LEDs using PhC reflector p-contact layers2021
- Author(s)
  H. Hirayama, Y. Kashima, E. Matsuura, N. Maeda, M. Jo, Y. Iwaisako, T. Iwai, M. Kokubo, T. Tashiro, H. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima and T. Nagano
- Organizer
  SPIE Photonic West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress on GaN and GaAs-based terahertz quantum-cascade lasers2021
- Author(s)
  H. Hirayama, T. Lin, L. Wang, M. Chen and K. Wang
- Organizer
  Virtual Workshop on Material Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Pure AlGaN UVB LEDs on AlN template: Achieving 9.6% Efficiency at 304nm Emission by Exceeding the Limit of Hole Injection and Light Reflectance2021
- Author(s)
  M. Ajmal Khan, N. Maeda, M. Jo, Y. Yamada, and H. Hirayama
- Organizer
  2021 IUVA ASIA WORKSHOP
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress on GaAs and GaN-based terahertz quantum-cascade lasers2021
- Author(s)
  H. Hirayama, T. Lin, L. Wang, M. Chen and K. Wang
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 深紫外LEDとTHz-QCLの最近の進展2021
- Author(s)
  平山秀樹
- Organizer
  第4回固体レーザーの高速探索と機能開発に向けたレーザー材料研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Enhancing the Current Density of AlGaN-Based UVB Laser Diode by Introducing an Al-graded Mg-doped p-AlGaN Hole Source Layer2021
- Author(s)
  M. Ajmal Khan, N. Maeda, M. Jo, and H. Hirayama
- Organizer
  ISPlasma 2021/IC-PLANTS 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design and MBE growth of GaN quantum cascade lasers for THz (25-60μm) and IR (1-3μm) spectrum range2021
- Author(s)
  L. Wang, T. Lin, K. Wang, M. Chen and H. Hirayama
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高出力・未踏波長テラヘルツ量子カスケードレーザーの進展と展望2021
- Author(s)
  平山秀樹、林宗澤、王利、王科、陳明曦
- Organizer
  理研シンポジウム第8 回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Progress on high-power UVC LEDs by increasing light-extraction efficiency2021
- Author(s)
  H. Hirayama, Y. Kashima, E. Matsuura, N. Maeda and M. Jo
- Organizer
  SPIE Photonic West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Progress of AlGaN UVC LEDs by improving light extraction efficiency2020
- Author(s)
  M. Jo, N, Maeda and H. Hirayama
- Organizer
  SPIE Photonic West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 殺菌用深紫外LEDの進展と展望2020
- Author(s)
  平山秀樹
- Organizer
  UV光源応用実証研究会、第3回会員限定研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] GaAs系およびGaN系テラヘルツ量子カスケードレーザーの進展2020
- Author(s)
  平山秀樹、林宗澤、王科、王利
- Organizer
  レーザー学会学術講演会第40回年次大会講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN 系 UV-A 多重量子井戸構造における内部量子効率と励起子の輻射再結合ダイナミクスの励起強度依存性2020
- Author(s)
  室谷英彰、三好博之、武田椋平、中尾拓希、倉井聡、M. Ajmal Khan、前田哲利、定昌史、平山秀樹、山田陽一
- Organizer
  第81回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] The Influence of Al-Graded undoped-AlGaN Cladding Layer’s Thickness on the Operating Voltages as well as on Injection Current of Ultraviolet-B Laser Diode2020
- Author(s)
  M. Ajmal Khan, N. Maeda, and H. Hirayama
- Organizer
  Optics Virtual 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] High performances of AlGaN-based UVC and UVB LEDs with relaxed buffer layer as well as using p-type graded multi-quantum barrier electron blocking layer2020
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, Y. Kashima and H. Hirayama
- Organizer
  SPIE Photonic West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN系多重量子井戸構造における励起子の輻射・非輻射再結合レートの励起強度依存性2020
- Author(s)
  三好博之，武田椋平，中生拓希，倉井聡，室谷英彰，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] ELO-AlNテンプレートの作製とMQWの評価2020
- Author(s)
  斉藤貴大，金輝俊，岡田成仁，前田哲利，定昌史，平山秀樹，只友一行
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress in GaAs THz-QCLs and towards realizing GAN based QCLs2020
- Author(s)
  K. Wang, T. T. Lin, L. Wang and H. Hirayama
- Organizer
  SPIE Photonic West
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaN深紫外LEDの進展と展望2020
- Author(s)
  平山秀樹
- Organizer
  日本学術振興会、結晶成長の科学と技術第161委員会、第114回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Highly Efficient AlGaN UVB LEDs using Al-Graded Mg-doped p-type Multi-Quantum-Barrier Electron Blocking Layer (Grad p-MQB-EBL)2020
- Author(s)
  M. Ajmal Khan, N. Maeda, M. Jo, Y. Yamada, and H. Hirayama
- Organizer
  LEDIA 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] GaAs系およびGaN系テラヘルツ量子カスケードレーザーの進展2020
- Author(s)
  平山秀樹、林宗澤、王科、王利
- Organizer
  レーザー学会学術講演会第40回年次大会講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 産業化を目指した深紫外LED高効率化の検討2020
- Author(s)
  平山秀樹
- Organizer
  応用電子物性分科会研究例会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN系多重量子井戸構造における励起子レート方程式モデルによる効率Droop現象の解析2020
- Author(s)
  室谷英彰，三好博之，武田椋平，中生拓希，倉井聡，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN系深紫外LEDの進展と応用展開2020
- Author(s)
  平山秀樹
- Organizer
  表面・真空学会若手研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress in GaAs THz-QCLs and towards realizing GAN based QCLs2020
- Author(s)
  K. Wang, T. T. Lin, L. Wang and H. Hirayama
- Organizer
  SPIE Photonic West
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] The improving resolution for dislocation analysis in GaN by three-photon microscopy2020
- Author(s)
  E. Hase, T. Yasui, H. Hirayama and K. Nagamatsu
- Organizer
  SPIE Photonics West
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN UVB LEDs at 310nm emission with high efficiency and light power using partially relaxed n-AlGaN buffer layer2020
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, E. Matsuura, Y. Kashima, Y. Yamada, H. Hirayama
- Organizer
  ISPlasma2020/IC-PLANTS2020
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 電流注入と光励起を用いた UV-LED 内の欠陥準位の検出2020
- Author(s)
  白井草汰、千代田夏樹、鎌田憲彦、糸数雄吏、山初駿太、平山秀樹
- Organizer
  第６７回応用物理学会春季学術講演会、14p-PB2-6、（2020.3.14）
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] 電流注入と光励起を用いたUV-LED内の欠陥準位の検出2020
- Author(s)
  白井草汰，千代田夏樹，鎌田憲彦，糸数雄吏，山初駿太，平山秀樹
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] LEE Enhancement in AlGaN UVC LED using Photonic Crystal Reflector Fabricated on p-GaN Contact Layer2020
- Author(s)
  H. Hirayama, Y. Kashima, Y. Watanabe, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai, M. Kokubo, T. Tashiro, H. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima, Y. Iwaisako and T. Nagano
- Organizer
  SPIE Photonic West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Assisted-scattering two-wall teraherz quantum cascade lasers2020
- Author(s)
  L. Wang, T. T. Lin, M. Chen and H. Hirayama
- Organizer
  テラヘルツ科学の最先端VII
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] DCスパッタAlNテンプレート上UVC AlGaN LEDの作製と評価2019
- Author(s)
  最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，桑葉俊輔，定昌史，前田哲利，矢口裕之，平山秀樹
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN系深紫外LEDの最近の進展と今後の展望2019
- Author(s)
  平山秀樹
- Organizer
  日本金属学会2019年春季（164回）講演大会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of high output power THz QCLs by reducing parasitic leakage current2019
- Author(s)
  T. T. Lin, L. Wang, K. Wang and H. Hirayama
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] DCスパッタAlNを用いたAlGaN層格子緩和の促進2019
- Author(s)
  最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，桑葉俊輔，定昌史，前田哲利，矢口裕之，平山秀樹
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design and analysis of DUV-LEDs and QCLs by utilizing HOKUSAI2019
- Author(s)
  Joosun Yun and Hideki Hirayama
- Organizer
  the ALL-RIKEN workshop
- Data Source
  KAKENHI-PROJECT-18K04251
[Presentation] AlGaN系深紫外LEDの最近の進展2019
- Author(s)
  平山秀樹
- Organizer
  徳島大学ポストLEDフォトニクス研究所開所記念式典
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 殺菌用紫外LEDの開発と今後の展望2019
- Author(s)
  平山秀樹
- Organizer
  OPIE’19紫外線応用技術セミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN歪制御に向けたAlGaN/AlN界面構造とアニール効果の検討2019
- Author(s)
  糸数雄吏，桑葉俊輔，定昌史，鎌田憲彦，平山秀樹
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] LEE enhancement in AlGaN UVC LED using photonic crystal reflector fabricated on p-GaN contact layer2019
- Author(s)
  H. Hirayama, Y. Kashima, Y. Watanabe, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai, M. Kokubo, T. Tashiro, H. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima, Y. Iwaisako and T. Nagano
- Organizer
  SPIE Photonic West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Detection of Nonradiative Recombination Levels in UV-LEDs by Irradiating Below-Gap Excitation Light2019
- Author(s)
  Norihiko Kamata, Ken Matsuda, Sota Shirai, Zentaro Honda, and Hideki Hirayama
- Organizer
  Compound Semiconductor Week (CSW) 2019, TuP-D-11 (Poster), Nara, May 21, 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] Current challenges and future direction for AlGaN based UV-B LEDs grown by LP-MOVPE2019
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama
- Organizer
  European Materials Research Society Spring Meeting 2019 (E-MRS)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Level broadening by dipole scattering in AlGaN/ AlGaN superlattice structures2019
- Author(s)
  J. Yun and H. Hirayama
- Organizer
  Infrared Terahertz Quantum Workshop (ITQW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progression in strained GaN/AlGaN THz-QCLs, growth and fabrication2019
- Author(s)
  L. Wang, T. T. Lin and H. Hirayama
- Organizer
  東北大学＆理研第1回連携ワークショップ
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Influence of Dipole Scattering to Level Broadening and Carrier Transport in AlGaN-based Superlattice Structures2019
- Author(s)
  Joosun Yun and Hideki Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04251
[Presentation] Optimization of THz QCLs by suppressing A leakage current via high energy states2019
- Author(s)
  T. T. Lin, K. Wang, L. Wang and H. Hirayama
- Organizer
  44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Fabrication of UVC AlGaN LEDs on DC-sputtered AlN templates with high-temperature annealing2019
- Author(s)
  Y. Mogami, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, Y. Itokazu, S. Kuwaba, M. Jo, N. Maeda, H. Yaguchi, and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] DCスパッタAlNテンプレートを用いたAlGaN深紫外LEDの作製2019
- Author(s)
  最上耀介，茂手木省吾，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，定昌史，前田哲利，矢口裕之，平山秀樹
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progression in strained GaN/AlGaN THz-QCLs, growth and fabrication2019
- Author(s)
  L. Wang, T. T. Lin and H. Hirayama
- Organizer
  東北大学＆理研第1回連携ワークショップ
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 微傾斜サファイア基板上AlNの選択横方向成長2019
- Author(s)
  斉藤貴大，中村亮太，藤川紗千恵，金輝俊，前田哲利，岡田成仁，平山秀樹，只友一行
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Progress on high output power THz QCLs developed by reducing horizontal parasitic current leakage2019
- Author(s)
  T. T. Lin, K. Wang, L. Wang and H. Hirayama
- Organizer
  電子情報通信学会　電子デバイス研究会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Progress on high output power THz QCLs developed by reducing horizontal parasitic current leakage2019
- Author(s)
  T. T. Lin, K. Wang, L. Wang and H. Hirayama
- Organizer
  電子情報通信学会　電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] GaN/AlGaN based THz-QCL taking into account an interface roughness scattering2019
- Author(s)
  J. Yun and H. Hirayama
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Influence of dipole scattering to level broadening and carrier transport in AlGaN-based superlattice structures2019
- Author(s)
  J. Yun and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of high-efficiency AlGaN deep-UV LEDs2019
- Author(s)
  H. Hirayama, N. Maeda and M. Jo
- Organizer
  SPIE Optics + Photonics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Problems and latest achievements in AlGaN-based deep-UV LEDs2019
- Author(s)
  H. Hirayama
- Organizer
  International Workshop on Ultraviolet Materials and Devices (IWUMD4)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Nonradiative Recombination Centers in UVB AIGaN Quantum Well and Their Temperature Dependence Revealed by Below-Gap Excitation Light2019
- Author(s)
  M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda and Hideki Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), MoP-CH-12(Poster), Okinawa, Nov.11, 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] Challenge and opportunity for mass production of UVC LED by MOVPE on high temperature annealed AlN template2019
- Author(s)
  K. Matsumoto, Y. Tomita, A. Mishima, Y. Yamaoka, S. Koseki, Y. Yano, H. Miyake and H. Hirayama
- Organizer
  Material Research Meeting 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Enhanced strain relaxation in AlGaN layers grown on sputter-based AlN templates2019
- Author(s)
  Y. Mogami, S. Motegi, A. Osawa, K. Osaki, Y. Tomioka, A. Maeoka, Y. Itokazu, S. Kuwaba, M. Jo, N. Maeda, H. Yagichi and H. Hirayama
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 特異構造の特性を生かした新機能発光デバイスの研究2019
- Author(s)
  平山秀樹
- Organizer
  新学術領域研究第4回領域全体会議
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Simulation and growth of GaN/AlGaN based terahertz quantum cascade structures2019
- Author(s)
  K. Wang, L. Wang, T. T. Lin, K. Fukuda, R. Zhang, and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Experimental and theoretical study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers2019
- Author(s)
  L. Wang, T. T. Lin, K. Wang, T. Grange and H. Hirayama
- Organizer
  Infrared Terahertz Quantum Workshop (ITQW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Progress on high-efficiency AlGaN-based UVB-LEDs for both medical and agricultural applications2019
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Optimizing AlGaN-based UVB LEDs using experimental device data in the Nextnano software2019
- Author(s)
  M. C. D. Figueira, A. Trellakis, S. Birner, M. A. Khan and H, Hirayama
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Optimization of THz QCLs by suppressing A leakage current via high energy states2019
- Author(s)
  T. T. Ln, K. Wang, L. Wang and H. Hirayama
- Organizer
  44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] GaN/AlGaN based THz-QCL taking into account an interface roughness scattering2019
- Author(s)
  Joosun Yun and Hideki Hirayama
- Organizer
  the 7th RAP symposium
- Data Source
  KAKENHI-PROJECT-18K04251
[Presentation] AlGaN UVC LEDs directly grown on DC-sputtered and high temperature annealed AlN templates2019
- Author(s)
  S. Kuwaba, Y. Itokazu, S. Motegi, Y. Mogami, A. Osawa, K. Osaki, Y. Tamioka, A. Maeoka, M. Jo, N. Kamata and H. Hirayama
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Nonradiative recombination centers in UVB AlGaN quantum well and their temperature dependence revealed by below-gap excitation light2019
- Author(s)
  M. I. Hossain, Y. Itokazu, S. Kuwaba, N. Kamata, N. Maeda, and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 0.45watt power GaAs-based THz QCL developed by reducing horizontal current leakage utilizing variable Al1-xGaxAs barriers-wells height structure2019
- Author(s)
  T. T. Lin, L. Wang and H. Hirayama
- Organizer
  東北大学＆理研第1回連携ワークショップ
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Near- and far-infrared quantum cascasde lasers based on GaAs and GaN materials: devices design and MBE growth2019
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  電子情報通信学会　電子デバイス研究会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN 系多重量子井戸構造における励起子レート方程式モデルによる効率曲線の解析2019
- Author(s)
  三好博之，武田椋平，中生拓希，倉井聡，室谷英彰，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 0.45watt power GaAs-based THz QCL developed by reducing horizontal current leakage utilizing variable Al1-xGaxAs barriers-wells height structure2019
- Author(s)
  T. T. Lin, L. Wang and H. Hirayama
- Organizer
  東北大学＆理研第1回連携ワークショップ
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Level broadening by dipole scattering in AlGaN/ AlGaN superlattice structures2019
- Author(s)
  J. Yun and H. Hirayama
- Organizer
  Infrared Terahertz Quantum Workshop (ITQW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 電子ブロック層の最適化による250nm AlGaN UVC-LEDの出力改善2019
- Author(s)
  中村励志，藤川紗千恵，前田哲利，遠藤聡，藤代博記，平山秀樹
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Current status and future directions of high power AlGaN-based UVB LEDs with emission of 280nm-320nm2019
- Author(s)
  M. A. Khan and H. Hirayama
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Simulation and growth of GaN/AlGaN based terahertz quantum cascade structures2019
- Author(s)
  2.K. Wang, L. Wang, T. T. Lin, K. Fukuda, R. Zhang, and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] The influence of both Mg-concentration and excimer laser annealing (ELA) on p-AlGaN cladding layer for the application of AlGaN-based UVB Laser Diodes2019
- Author(s)
  M. A. Khan, J. P. Bermudo, Y. Ishikawa, H. Ikenoue, S. Fujikawa, N. Maeda, M. Jo and H. Hirayama
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Improved simulation of MOCVD growth of AlN by using data assimilation2019
- Author(s)
  M. Jo, Y. Itokazu, S. Kuwaba and H. Hirayama
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] DCスパッタAlNテンプレートを用いたUVCLEDの進展2019
- Author(s)
  最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，糸数雄吏，定昌史，前田哲利，矢口裕之，平山秀樹
- Organizer
  電子情報通信学会レーザ・エレクトロニクス研究会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 深紫外LEDの国内外の最新技術と今後の展望2019
- Author(s)
  平山秀樹
- Organizer
  特許庁技術研修セミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Level broadening by dipole scattering in AlGaN/AlGaN superlattice structures2019
- Author(s)
  Joosun Yun and Hideki Hirayama
- Organizer
  Infrared Terahertz Quantum Workshop (ITQW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04251
[Presentation] データ同化を用いたAlN成長シミュレーションの高精度化2019
- Author(s)
  定昌史，糸数雄吏，桑葉俊輔，平山秀樹
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Influence of dipole scattering to level broadening and carrier transport in AlGaN-based superlattice structures2019
- Author(s)
  J. Yun and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent progress and future of GaN and GaAs-based THz-QCL2019
- Author(s)
  K. Wang, L. Wang, T. T. Lin, K. Fukuda and H. Hirayama
- Organizer
  第80回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Experimental and theoretical study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers2019
- Author(s)
  L. Wang, T. T. Lin, K. Wang, T. Grange and H. Hirayama
- Organizer
  Infrared Terahertz Quantum Workshop (ITQW 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaN系多重量子井戸構造における励起子レート方程式モデルによる効率曲線の解析(2)2019
- Author(s)
  室谷英彰，三好博之，武田椋平，中生拓希，倉井聡，M. A. Khan，前田哲利，定昌史，平山秀樹，山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Effect of 4μm-thick buffer as well as 50% relaxed n-AlGaN electron Injection layer on the performance of 308nm UV-B LED2019
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, Y. Yamada, H. Hirayama
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress and future prospects of AlGaN deep-UV LEDs2019
- Author(s)
  H. Hirayama
- Organizer
  48th International School & Conference on the Physics of Semiconductors (Jaszowiec 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] MBE grown p-type AlGaN and deep ultraviolet light emitting diodes2019
- Author(s)
  K. Wang, N. Maeda, M. A. Khan, Z. Li, Y. Wu, T. Tao, B. Liu, R. Zhang and H. Hirayama
- Organizer
  4th International Workshop on Ultraviolet Materials and Devices (IWUMD4)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 深紫外LEDの開発最前線2019
- Author(s)
  定昌史，平山秀樹
- Organizer
  モノづくりフェア2019
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Al系窒化物結晶ヘテロ成長技術とそれを用いた深紫外線LEDの開発2019
- Author(s)
  平山秀樹
- Organizer
  第66回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Optimization of p-cladding layer for improvement of deep ultraviolet light emitting diode performance2019
- Author(s)
  Y. Tomita, A. Mishima, Y. Yamaoka, T. Arimura, S. Koseki, Y. Yano, K. Matsumoto, and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] pクラッド層の最適化によるAlGaN系深紫外LEDの性能向上2019
- Author(s)
  富田優志，三嶋晃，山岡優哉，有村忠信，小関修一，矢野良樹，松本功，平山秀樹
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Radiative and nonradiative recombination rates of excitons and their effects on internal quantum efficiency of AlGaN-based UV-B MQWs2019
- Author(s)
  H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama, and Y. Yamada
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Investigation of AlGaN/AlN interface structure and annealing effect for control of strain re- laxation2019
- Author(s)
  Y. Itokazu, S. Kuwaba, M. Jo, N. Kamata, and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Role of exciton recombination processes on internal quantum efficiency in AlGaN-based UV-B multiple quantum wells2019
- Author(s)
  H. Murotani, H. Miyoshi, R. Takeda, M. A. Khan, N. Maeda, M. Jo, H. Hirayama and Y. Yamada
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Epitaxial lateral overgrowth of AlN with partially non-dislocation-region on vicinal AlN template2019
- Author(s)
  N. Okada, F. Kim, T. Saito, S. Fujikawa, N. Maeda, H. Hirayama and K. Tadatomo
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Improved current injection in AlGaN-based 310 nm-UVB LED for real world applications2019
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama
- Organizer
  ISPlasma2019/IC-PLANTS2019
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] LEE enhancement in AlGaN UVC LED using photonic crystal reflector2019
- Author(s)
  H. Hirayama, Y. Kashima, Y. Watanabe, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai, M. Kokubo, T. Tashiro, K. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kurashima, Y. Iwaisako and T. Nagano
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN量子井戸構造における深紫外誘導放出の温度依存性2019
- Author(s)
  田邉凌平，久永桂典，濱田晟，別府寛太，倉井聡，室谷英彰，前田哲利，定昌史，平山秀樹，山田陽一
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] GaN/AlGaN based THz-QCL taking into account an interface roughness scattering2019
- Author(s)
  J. Yun and H. Hirayama
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Optically pumped stimulated emission from AlGaN-based UV-C multiple quantum wells with high internal quantum efficiency of 16 % at 750 K2019
- Author(s)
  H. Murotani, K. Hisanaga, R. Tanabe, A. Hamada, N. Maeda, M. Jo, H. Hirayama and Y. Yamada
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Experimental and theoretical study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers2019
- Author(s)
  L. Wang, K. Wang, T. T. Lin and H. Hirayama,
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Gain predicted by NEGF method in terahertz quantum cascade lasers based on different semiconductors2019
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of high output power THz QCLs by reducing parasitic leakage current2019
- Author(s)
  T. T. Lin, L. Wang, K. Wang and H. Hirayama
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Near- and far-infrared quantum cascasde lasers based on GaAs and GaN materials: devices design and MBE growth2019
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  電子情報通信学会　電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent progress and future of GaN and GaAs-based THz-QCL2019
- Author(s)
  K. Wang, L. Wang, T. T. Lin, K. Fukuda and H. Hirayama
- Organizer
  第80回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Gain predicted by NEGF method in terahertz quantum cascade lasers based on different semiconductors2019
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Experimental and theoretical study of piezoelectric polarization in GaN/AlGaN terahertz quantum cascade lasers2019
- Author(s)
  L. Wang, K. Wang, T. T. Lin and H. Hirayama
- Organizer
  理研シンポジウム第7 回「光量子工学研究」
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] MBE grown p-type AlGaN and deep ultraviolet light emitting diodes2019
- Author(s)
  K. Wang, N. Maeda, M. A. Khan, Z. Li, Y. Wu, T. Tao, B. Liu, R. Zhang and H. Hirayama
- Organizer
  4th International Workshop on Ultraviolet Materials and Devices (IWUMD4)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Simultaneous improvements in EQE and WPE of AlGaN UV-C LEDs with Ni:AlN/Al Ohmic reflectors2019
- Author(s)
  T. G. Kim, T. H. Lee, H. Hirayama, T. H. Park, K. R. Son
- Organizer
  SPIE Optics + Photonics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 0.44 watt power GaAs/AlGaAs THz QCL developed by reducing horizontal current leakage2019
- Author(s)
  T. T. Lin, L. Wang and H. Hirayama
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Realization of high light output power in AlGaN-based UVB LED at 310±2nm emission using highly relaxed (50%) n-AlGaN electron injection layer2019
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, S. Fujikawa, E. Matsuura, Y. Kashima, Y. Yamada and H. Hirayama
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 0.44 watt power GaAs/AlGaAs THz QCL developed by reducing horizontal current leakage2019
- Author(s)
  T. T. Lin, L. Wang and H. Hirayama
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Achievement of internal quantum efficiency up to 53% at 326nm-UVA emission from AlGaN QWs with engineering of highly relaxed buffer layer2019
- Author(s)
  M.A. Khan, R. Takeda, H. Miyoshi, Y. Yamada, S. Fujikawa, N. Maeda, M. Jo and H. Hirayama
- Organizer
  4th International Workshop on Ultraviolet Materials and Devices (IWUMD4)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 42mW light power from AlGaN-based 302nm-band UVB LEDs: a way forward for UVB LDs2019
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, S. Fujikawa, Y. Yamada, and H. Hirayama
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Influence of the strain relaxation on the optical property of AlGaN quantum wells2019
- Author(s)
  Y. Itokazu, Y. Mogami, S. Kuwaba, S. Motegi, A. Osawa, K. Osaki, Y. Tamioka, M. Jo, N. Kamata and H. Hirayama
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Highly reflective ruthenium (Ru) p-type electrode for AlGaN deep-UV LED2018
- Author(s)
  N. Maeda, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Evolution of morphology and crystalline quality of sputtered AlN films with high-temperature annealing2018
- Author(s)
  Y. Mogami, S. Motegi, A. Osawa, K. Ozaki, C. Tanioka, C. Tanioka, A. Maeoka, M. Jo, N. Maeda, H. Yagichi and H. Hirayama
- Organizer
  International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Characterization of AIGaN based lower bound (280-300nm) UVB LED device grown by MOCVD2018
- Author(s)
  M. A. Khan, Y. Itokazu, T. Matsumoto, S. Minami, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018/IC-PLANTS2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 深紫外LEDの進展と今後の展望2018
- Author(s)
  平山秀樹
- Organizer
  日本学術振興会結晶成長の科学と技術第161委員会第105回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 深紫外AlGaN発光ダイオード特性のp-AlGaN膜厚依存性2018
- Author(s)
  桑葉俊輔、糸数雄吏、定昌史、鎌田憲彦、平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] Theoretical and experimental approaches for GaN/AlGaN Hz quantum cascade lasers2018
- Author(s)
  K. Wang, L. Wang, T. T. Lin and H. Hirayama
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Efficient emission by current injection from 280 nm AlGaN deep-UV LD structures2018
- Author(s)
  N. Maeda, M. Jo, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 深紫外LEDの最近の進展と今後の展望2018
- Author(s)
  平山秀樹
- Organizer
  平成30年度第1回ITEC FORUM
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] GaN系QCL実現に向けたSi基板上GaN/AlGaN超格子構造の作製2018
- Author(s)
  藤川紗千恵，石黒稔也，王科，藤代博記，平山秀樹
- Organizer
  理研シンポジウム　第6回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Optimization of terahertz quantum cascade lasers by suppressing a carrier leakage channel via a high energy state2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang and H. Hirayama
- Organizer
  International Conference on Photonics Research (ICPR2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 紫外線LEDの開発と今後の展望2018
- Author(s)
  平山秀樹
- Organizer
  赤外・紫外特別セミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Controlled crystal orientations of semipolar AlN grown on m-plane sapphire by MOCVD2018
- Author(s)
  M. Jo, Y. Itokazu, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Development of 240 nm-band high output power AlGaN UVC LED2018
- Author(s)
  T. Ishiguro, R. Nakamura, S. Fujikawa, N. Maeda, R. Machida, H. Fujishiro, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] p型ドット電極とリフレクターによるAlGaN深紫外LEDの高効率動作2018
- Author(s)
  前田哲利，J. Yun，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Approach toward GaN-based terahertz quantum-cascade laser2018
- Author(s)
  K. Wang, T. T. Lin, L. Wang, K. Fukuda, and H. Hirayama
- Organizer
  理研シンポジウム　第6回「光量子工学研究」-サブ波長フォトニクス研究と新たな光量子工学の展開-
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Design of asymmetric two-wells indirect pumping terahertz quantum cascade lasers for high-temperature operation2018
- Author(s)
  L. Wang, T. T. Lin, K. Wang, and H. Hirayama
- Organizer
  理研シンポジウム　第6回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 深紫外LEDの基礎・課題と将来展望2018
- Author(s)
  平山秀樹
- Organizer
  日本学術振興会第162委員会第110回研究会特別公開シンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of high power THz QCLs2018
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  Nanotech Malaysia 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 殺菌用に実用化した深紫外LED2018
- Author(s)
  平山秀樹
- Organizer
  理化学研究所一般公開2018サイエンスレクチャー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Milliwatt Power UVA LEDs Developed by Using AlGaN Superlattice (SL) Buffer Layers Fabricated on AlN/Sapphire Templates2018
- Author(s)
  Muhammad Ajmal Khan, Takuma Matsumoto, Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
- Organizer
  The 19th Int. Conf. on Metalorganic Vapor Phase Epitaxy ICMOVPE
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] Design of asymmetric two-wells indirect pumping terahertz quantum cascade lasers for high-temperature operation2018
- Author(s)
  L. Wang, T. T. Lin, K. Wang, and H. Hirayama
- Organizer
  理研シンポジウム　第6回「光量子工学研究」-サブ波長フォトニクス研究と新たな光量子工学の展開-
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 高温アニール処理DCスパッタAlNテンプレートの評価2018
- Author(s)
  最上耀介，茂手木省吾，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，定昌史，前田哲利，矢口裕之，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 280nm帯AlGaN深紫外LD構造の作製とその電流注入発光特性2018
- Author(s)
  前田哲利，定昌史，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LEDの最近の進展2018
- Author(s)
  平山秀樹
- Organizer
  第150回記念微小光学研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高温アニール処理AlN上に作製したUVC-LEDの高効率動作2018
- Author(s)
  糸数雄吏，桑葉俊輔，定昌史，鎌田憲彦，平山秀樹
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] PhCリフレクターを用いたUVC-LEDの高効率化の進展2018
- Author(s)
  鹿嶋行雄，渡邊康弘，柴田智彦，前田哲利，松浦恵里子，岩井武，小久保光典，田代貴晴，古田寛治，上村隆一郎，長田大和，高木秀樹，倉島優一，祝迫恭，長野丞益，平山秀樹
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Evaluation of GaN-based THz-QCL structure on Si substrate grown by MOCVD2018
- Author(s)
  S. Fujikawa, T. Ishiguro, K. Wang, W. Terashima, H. Fujishiro and H. Hirayama
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Reflectance of reflective photonic crystal on p-contact layer of AlGaN deep-UV LED2018
- Author(s)
  J. Yun，鹿島行雄，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 特異構造の特性を生かした新機能発光デバイスの研究2018
- Author(s)
  平山秀樹
- Organizer
  新学術領域研究平成30年度領域全体会議
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of high-power THz-QCLs2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang, and H. Hirayama
- Organizer
  理研シンポジウム　第6回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 深紫外AlGaN発光ダイオード特性のp-AlGaN膜厚依存性2018
- Author(s)
  桑葉俊輔，糸数雄吏，定昌史，鎌田憲彦，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] ノーベル賞受賞中村先生のご紹介、青色発光半導体開発のインパクト2018
- Author(s)
  平山秀樹
- Organizer
  サイエンスシンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LEDの進展と今後の展望2018
- Author(s)
  平山秀樹
- Organizer
  第18回高機能膜フォーラム
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 230-240nm短波長UVC-LEDの高出力化の検討2018
- Author(s)
  石黒稔也，中村励志，藤川紗千恵，前田哲利，藤代博記，平山秀樹
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 半極性AIN/サファイアの結晶成長とUVC-LED実現へのアプローチ2018
- Author(s)
  定昌史, 糸数雄吏, 桑葉俊輔, 鎌田憲彦, 平山秀樹
- Organizer
  独立行政法人日本学術振興会　ワイドギャップ半導体光・電子デバイス第162委員会, 第110回研究会・特別公開シンポジウム「紫外発光デバイスの最前線と将来展望」
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] 325nm emission from highly transparent AlGaN UVA LEDs grown on AlN template in the LP-MOCVD2018
- Author(s)
  M. A. Khan, T. Matsumoto, Y. Itokazu, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Development of high-power THz-QCL by supressing regidual leakage current2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang, and H. Hirayama
- Organizer
  19th East Asia Sub-millimeter-wave Receiver Technology Workshop and 5th RIKEN-NICT Joint Workshop on Terahertz Technology
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LEDの進展と今後の展望2018
- Author(s)
  平山秀樹
- Organizer
  LED総合フォーラム2018 in 徳島
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Progress of 310 nm-band high-efficiency UVB-LED for medical applications2018
- Author(s)
  M. A. Khan, N. Maeda, M. Jo, Y. Yamada and H. Hirayama
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Hybrid growth of AlGaN deep ultraviolet ligh emitting diodes by MBE and MOCVD2018
- Author(s)
  K. Wang, N. Meda, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Resent progress of THz-QCLs2018
- Author(s)
  H. Hirayama
- Organizer
  International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Efficient carrier injection in UVC AlGaN LEDs with thick p-AlGaN layers2018
- Author(s)
  Shunsuke Kuwaba, Yuri Itokazu, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
- Organizer
  The Int. Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] Optimization of terahertz quantum cascade lasers by suppressing a carrier leakage channel via a high energy state2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang and H. Hirayama
- Organizer
  International Conference on Photonics Research (ICPR 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Broadening mechanisms and simulation for GaN based THz QCLs by non-equilibrium Green’s function method2018
- Author(s)
  K. Wang, T. Grange, T. T. Lin, L. Wang, S. Birner, J. Yun, W. Terashima and H. Hirayama
- Organizer
  8th International Quantum Cascade Laser School and Workshop (IQCLSW 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] DCスパッタ法AlNの高温アニール処理とUVC-LEDへのアプローチ2018
- Author(s)
  茂手木省吾，最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，前田哲利，矢口裕之，平山秀樹
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 殺菌用・深紫外LEDの開発2018
- Author(s)
  平山秀樹
- Organizer
  JST新技術説明会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Approach toward GaN-based terahertz quantum-cascade laser2018
- Author(s)
  K. Wang, T. T. Lin, L. Wang, K. Fukuda, and H. Hirayama
- Organizer
  理研シンポジウム　第6回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Narrow band milliwatts power operation of AlGaN based UVB LED for medical applications2018
- Author(s)
  M. A. Khan, T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  International Conference on UV LED Technologies & Applications (ICULTA-2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Theoretical and experimental approaches for GaN/AlGaN Hz quantum cascade lasers2018
- Author(s)
  K. Wang, L. Wang, T. T. Lin and H. Hirayama
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Evaluation of GaN-based THz-QCL structure on Si substrate grown by MOCVD2018
- Author(s)
  S. Fujikawa, T. Ishiguro, K. Wang, W. Terashima, H. Fujishiro and H. Hirayama
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Simulation of optical gain for GAN terahertz quantum cascade lasers by using non-equilibrium green's function method2018
- Author(s)
  K. Wang, T. T. Lin, L. Wang, J. Yun and H. Hirayama
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 高温アニール・再成長により作製したAlNの結晶性に及ぼす核形成条件の影響2018
- Author(s)
  糸数雄吏、桑葉俊輔、定昌史、鎌田憲彦、平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] Hybrid growth of AlGaN deep ultraviolet ligh emitting diodes by MBE and MOCVD2018
- Author(s)
  K. Wang, N. Meda, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 半極性AlN/サファイアの結晶成長とUVC-LED実現へのアプローチ2018
- Author(s)
  定昌史，糸数雄吏，桑葉俊輔，鎌田憲彦，平山秀樹
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高温アニール・再成長により作製したAlNの結晶性に及ぼす核形成条件の影響2018
- Author(s)
  糸数雄吏，桑葉俊輔，定昌史，鎌田憲彦，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlNの選択横方向成長におけるストライプ方位依存性2018
- Author(s)
  金輝俊，斉藤貴大，藤川紗千恵，前田哲利，岡田成仁，平山秀樹，只友一行
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] New design of GaAs based THz-QCL for obtaining high optical gain by indirect-injecting asymmetric-wells superlattice structure2018
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 325nm Emission From Highly Transparent AlGaN UVA LEDs Grown on AlN Template in the LP-MOCVD2018
- Author(s)
  Muhammad Ajmal Khan, Takuma Matsumoto, Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
- Organizer
  The 19th Int. Conf. on Metalorganic Vapor Phase Epitaxy (ICMOVPE)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] Development of 304-310nm-band UVB LEDs both for medical and agricultural applications2018
- Author(s)
  M. A. Khan, N. Maeda, Y. Yamada, and H. Hirayama
- Organizer
  理研シンポジウム　第6回「光量子工学研究」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LEDのp型高反射Ru電極の検討2018
- Author(s)
  前田哲利，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Increased output power of THz-QCLs by reducing leakage current via upper levels2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang and H. Hirayama
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] THz-QCLs toward high output power near liquid nitrogen temperature operation2018
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  CIMTEC 2018-8th Forum on New Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent Progress of high-efficiency AlGaN Deep-UV LEDs2018
- Author(s)
  H. Hirayama, M. Jo, N. Maeda, and N. Kamata
- Organizer
  16th Symposium on the Science and Technology of Lighting (LS-16)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of AlGaN deep-UV LEDs2018
- Author(s)
  H. Hirayama and M. Jo
- Organizer
  International Workshop on UV Materials and Devices 2018 (IWUMD2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of high output power THz quantum cascade lasers2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang and H. Hirayama
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Improving the optical gain at high temperatue in THz-QCLs by using asymmetric two-wells scheme2018
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  8th International Quantum Cascade Laser School and Workshop (IQCLSW2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Broadening mechanisms and simulation for GaN based THz QCLs by non-equilibrium Green’s function method2018
- Author(s)
  K. Wang, T. Grange, T. T. Lin, L. Wang, S. Birner, J. Yun, W. Terashima and H. Hirayama
- Organizer
  8th International Quantum Cascade Laser School and Workshop (IQCLSW2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] m面サファイア上に成長した(11-12)面AlGaN量子井戸の発光特性2018
- Author(s)
  定昌史，糸数雄吏，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Optical Characterization of Defect Levels in AlGaN Multiple Quantum Wells by Using Below-Gap Excitation Light2018
- Author(s)
  N. Kamata, Y. Itokazu, Md H. Ismail, and H. Hirayama
- Organizer
  The 2018 Int. Symp. for Advanced Materials Research (ISAMR 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] 殺菌用・深紫外LEDの進展2018
- Author(s)
  平山秀樹
- Organizer
  第32回JFCAテクノフェスタ
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Over 20 mW operation of 303 nm AlGaN UVB LED with p-AlGaN transparent contact layer2018
- Author(s)
  M. A. Khan，前田哲利，定昌史，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Influence of the nucleation condetions on the quality of AlN layers with high-temperature annealing and regrowth processes2018
- Author(s)
  Y. Itokazu, S. Kuwaba, M. Jo, N. Kamata, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress towards realizing GaN/AlGaN quantum cascade lasers2018
- Author(s)
  K. Wang, L. Wang, T. T. Lin, and H. Hirayama
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Increased output power of THz-QCLs by reducing leakage current via upper levels2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang and H. Hirayama
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
- Author(s)
  K. Wang, T. T. Lin, L. Wang, J. Yun, W. Terashima, H. Hirayama, T. Grange, Z. Jehn, and S. Birnner
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent progress and future prospects of AlGaN deep-UV LEDs2018
- Author(s)
  H. Hirayama and M. Jo
- Organizer
  The International Conference and Exhibition on UV LED Technologies & Applications (ICULTA)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LDの実現に向けた最近の進展2018
- Author(s)
  前田哲利，山田陽一，定昌史，平山秀樹
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Investigation of crystallinity and current injection issue in 310 nm AlGaN UVB LED grown on AlN template in LP-MOVPE2018
- Author(s)
  M. A. Khan, T. Matsumoto, N. Maeda, M. Jo, Y. Yamada, N. Kamata and H. Hirayama
- Organizer
  International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Increasing light-extraction efficiency of AlGaN UVLED with remained low voltage by using PhC reflector on p-GaN contact layer2018
- Author(s)
  H, Hirayama, Y. Kashima, T. Shibata, N. Maeda, M. Jo, E. Matsuura, T. Iwai, M. Kokubo, T. Tashiro, H. Furuta, R. Kamimura, Y. Osada, H. Takagi, Y. Kuwashima, Y. Iwaisako, T. Nagano
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress towards realizing GaN/AlGaN quantum cascade lasers2018
- Author(s)
  K. Wang, L. Wang, T. T. Lin, and H. Hirayama
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent Progress of AlGaN UVC LEDs2018
- Author(s)
  H. Hirayama
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 殺菌用紫外LEDの開発と今後の展望2018
- Author(s)
  平山秀樹
- Organizer
  光とレーザーの科学技術フェア2018紫外線セミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Nonradiative Recombination Centers in AlGaN Deep UV-LEDs Detected by Below Gap Excitation Light2018
- Author(s)
  M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda, and Hideki Hirayama
- Organizer
  The Int. Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] Improvement in EQE of 294 - 303 nm AlGaN UVB LED by increasing the emission efficiency from multiple quantum well (MQW)2018
- Author(s)
  M. A. Khan, N. Maeda, Y. Yamada, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LEDの光取り出し効率の向上2018
- Author(s)
  平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Highly-reflective photonic crystal (HR-PhC) design for increasing light- extraction efficiency (LEE) of AlGaN deep-UV LEDs2018
- Author(s)
  J. Yun, Y. Kashima, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Current leakage suppression in two-well structural THz-QCLs by using asymmetric design2018
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] [Tutrial] Resent progress of THz-QCLs2018
- Author(s)
  H. Hirayama
- Organizer
  International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
- Author(s)
  K. Wang, T. T. Lin, L. Wang, J. Yun, W. Terashima, H. Hirayama, T. Grange, Z. Jehn, and S. Birnner
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Highly reflective Ni doped AlN/Al ohmic reflectors and its application to AlGaN-based flip-chip deep-UV LEDs2018
- Author(s)
  T. H. Lee, T. H. Park, K. R. Son, H. J. Lee, S. K. Kang, H. Hirayama, and T. G. Kim
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Nonradiative recombination centers in AlGaN deep UV-LEDs detected by below-gap excitation light2018
- Author(s)
  M. I. Hossain, Y. Itokazu, S. Kuwaba, N. Kamata, N. Maeda, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of AlGaN deep-UV LEDs by increasing light-extraction efficiency2018
- Author(s)
  H. Hirayama and M. Jo
- Organizer
  The 7th International Symposium on Growth of III-Nitrides (ISGN-7)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LEDの高効率化技術2018
- Author(s)
  平山秀樹
- Organizer
  サイエンス＆テクノロジー社セミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Milliwatt power UVA LEDs developed by using AlGaN superlattice (SL) buffer layers fabricated on AlN/sapphire templates2018
- Author(s)
  M. A. Khan, T. Matsumoto, Y. Itokazu, N. Maeda, M. Jo, N. Kamata, and H. Hirayama
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Efficient carrier injection in UVC AlGaN LEDs with thick p-AlGaN layers2018
- Author(s)
  S. Kuwaba, Y. Itokazu, M. Jo, N. Kamata, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures2018
- Author(s)
  Ke Wang, Tsung-Tse Lin, Li Wang, Joosun Yun, Wataru Terashima, Hideki Hirayama, Thomas Grange, Zoltan Jehn, and Stefan Birner
- Organizer
  International Workshop on Nitride Semiconductors (IWN) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04251
[Presentation] Improved crystal quality of semipolar AlN by employing thermal annealing technique with MOVPE2018
- Author(s)
  M. Jo, S. Minami and H. Hirayama
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] UVCレーザダイオード実現へのアプローチ2018
- Author(s)
  前田哲利，定昌史，松本卓磨，鎌田憲彦，平山秀樹
- Organizer
  日本学術振興会162委員会第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Improving the optical gain at high temperatue in THz-QCLs by using asymmetric two-wells scheme2018
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  8th International Quantum Cascade Laser School and Workshop (IQCLSW 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 深紫外LEDの進展と今後の展望2018
- Author(s)
  平山秀樹
- Organizer
  UV LED Forum in Japan
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Evaluation of DC sputtered AlN template by wet KOH etching2018
- Author(s)
  Y. Mogami, S. Motegi, A. Osawa, K. Osaki, Y. Tanioka, A. Maeoka, M. Jo, N. Maeda, H. Yaguchi, and H. Hirayama
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高効率・深紫外線LEDの普及に向けて2018
- Author(s)
  平山秀樹
- Organizer
  先端的低炭素化技術開発（ALCA）、新技術説明会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 240nm帯AlGaN UVC-LEDの高出力化の検討2018
- Author(s)
  石黒稔也，中村励志，藤川紗千恵，前田哲利，町田龍人，藤代博記，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] GaN系QCL実現に向けたSi基板上GaN/AlGaN超格子構造の作製2018
- Author(s)
  藤川紗千恵，石黒稔也，王科，藤代博記，平山秀樹
- Organizer
  理研シンポジウム　第6回「光量子工学研究」-サブ波長フォトニクス研究と新たな光量子工学の展開-
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaN深紫外LEDの進展と今後の展望2018
- Author(s)
  平山秀樹
- Organizer
  パワー光源及び応用システム研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Optical characterization of defect levels in AlGaN multiple quantum wells by using below-gap excitation light2018
- Author(s)
  N. Kamata, Y. Itokazu, Md H. Ismail, and H. Hirayama
- Organizer
  The 2018 Int. Symp. for Advanced Materials Research (ISAMR 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] DCスパッタAlN膜の高温アニールによる表面状態の変化2018
- Author(s)
  茂手木省吾，最上耀介，大澤篤史，尾崎一人，谷岡千丈，前岡淳史，定昌史，前田哲利，矢口裕之，平山秀樹
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] UVC emission from (11-22) AlGaN quantum wells grown by metal-organic chemical vapor deposition2018
- Author(s)
  M. Jo, Y. Itokazu and H. Hirayama
- Organizer
  International Symposium on Growth of III-Nitrides (ISGN-7)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Development of high-power THz-QCL by supressing regidual leakage current2018
- Author(s)
  T. T. Lin, K. Wang, L. Wang, and H. Hirayama
- Organizer
  19th East Asia Sub-millimeter-wave Receiver Technology Workshop and 5th RIKEN-NICT Joint Workshop on Terahertz Technology
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Influence of the nucleation conditions on the quality of AlN layers with high temperature annealing and regrowth processes2018
- Author(s)
  Yuri Itokazu, Shunsuke Kuwaba, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
- Organizer
  The Int. Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] AlGaN 深紫外LED の高効率化の現状と展望2018
- Author(s)
  平山秀樹
- Organizer
  2018年電子情報通信学会ソサイエティ大会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高出力THz-QCLの進展2017
- Author(s)
  林宗澤，寺嶋亘，平山秀樹
- Organizer
  第3回理研-NICT合同テラヘルツワークショップ/第17回ミリ波サブミリ波受信機ワークショップ
- Place of Presentation
  情報通信研究機構
- Year and Date
  2017-02-27
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design of indirect injection scheme THz QCLs with high operation temperature2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 44th International Symposium on Compound Semiconductors (ISCS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Si基板上へのGaN系THz-QCL構造のMOCVD成長と評価2017
- Author(s)
  石黒稔也，藤川紗千恵，王科，前田哲利，町田龍人，藤代博記，平山秀樹
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LED高反射フォトニック結晶のダメージレス精密加工2017
- Author(s)
  鹿嶋行雄，田代貴晴，小久保光典，上村隆一郎，長田大和，岩井武，森田敏郎，松浦恵里子，前田哲利，定昌史，高木秀樹，平山秀樹
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高出力THz-QCLの進展2017
- Author(s)
  林宗澤，寺嶋亘，平山秀樹
- Organizer
  第3回理研-NICT合同テラヘルツワークショップ/第17回ミリ波サブミリ波受信機ワークショップ
- Place of Presentation
  情報通信研究機構（東京都小金井市）
- Year and Date
  2017-02-27
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaN高効率深紫外LEDの進展2017
- Author(s)
  前田哲利，定昌史，鹿嶋行雄，松浦恵里子，高木秀樹，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和，平山秀樹
- Organizer
  理研シンポジウム　第5回「光量子工学」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of AlGaN-based deep-ultraviolet light-emitting diodes2017
- Author(s)
  M. Jo and H. Hirayama
- Organizer
  8th International conference and Exhibition on LASERS, OPTICS & PHOTONICS
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Exceeding 30% IQE of AlGaN quantum well 304 nm UVB emission and single peak operation of 326nm UV LED2017
- Author(s)
  M. A. Khan, Y. Itokazu, T. Matsumoto, N. Maeda, M. Jo, H. Hirayama and N. Kamata
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Waveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
- Author(s)
  K. Wang, T. T. Lin, W. Terashima and H. Hirayama
- Organizer
  The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高反射Ni/Au電極のNi膜厚最適化によるAlGaN深紫外LEDの外部量子効率9％動作2017
- Author(s)
  前田哲利，定昌史，鹿嶋行雄，松浦恵里子，高木秀樹，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和，平山秀樹
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高反射フォトニック結晶によるAlGaN深紫外LEDの外部量子効率10%動作2017
- Author(s)
  鹿嶋行雄，前田哲利，松浦恵里子，定昌史，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和，高木秀樹，平山秀樹
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design of THz QCLs toward high output power by variable height active structure near liquid nitrogen temperature operation2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 7th Annual World Congress of Nano Science and Technology-2017 (Nano S&T-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Efficiency improvement of AlGaN UVC-LEDs using highly-reflective Ni/Al p-type electrode2017
- Author(s)
  N. Maeda, M. Jo and H. Hirayama
- Organizer
  The 44th International Symposium on Compound Semiconductors (ISCS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Effects of Ga supply on the growth of (11-22) AlN on m-plane (1-100) Sapphire substrates2017
- Author(s)
  M. Jo and H. Hirayama
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Waveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
- Author(s)
  K. Wang, T. T. Lin, W. Terashima and H. Hirayama
- Organizer
  The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Improving EQE (10%) of AlGaN deep-UV LED using highly-reflective photonic ceystal (HR-PhC) on p-contact layer2017
- Author(s)
  Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi and H. Hirayama
- Organizer
  The International Workshop on UV Materials and Devices (IWUMD-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  14th International Conference on Intersubband Transitions in Quantum Wells (ITQW2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Variable height active structure design THz QCLs operating at 3.7 THz with the maximum operation temperature 145 K2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 44th International Symposium on Compound Semiconductors (ISCS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Current status and next challenges for GaN-based QCLs2017
- Author(s)
  Ke Wang, W. Terashima, T. T. Lin and H. Hirayama
- Organizer
  第3回理研-NICT合同テラヘルツワークショップ/第17回ミリ波サブミリ波受信機ワークショップ
- Place of Presentation
  情報通信研究機構（東京都小金井市）
- Year and Date
  2017-02-27
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] テラヘルツ量子カスケードレーザの進展と展望2017
- Author(s)
  平山秀樹、寺嶋亘、林宗澤
- Organizer
  レーザー学会
- Place of Presentation
  徳島大学（徳島県徳島市）
- Year and Date
  2017-01-07
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 透明コンタクト層とレンズを用いたAlGaN深紫外LEDのWPE9.6％動作2017
- Author(s)
  平山秀樹，鹿嶋行雄，松浦恵里子，高木秀樹，前田哲利，定昌史，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 深紫外線LEDの開発2017
- Author(s)
  平山秀樹
- Organizer
  第4回皮膚光線治療推進の会セミナー
- Place of Presentation
  御茶ノ水ソラシティカンファレンスセンター（東京都千代田区）
- Year and Date
  2017-03-19
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 24th Congress of the International Commission for Optics (ICO-24)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 24th Congress of the International Commission for Optics (ICO-24)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Over 10 % EQE AlGaN Deep-UV LED developed by using Transparent p-AlGaN Contact Layer2017
- Author(s)
  H. Hirayama, T. Takano, Jun. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, I. Ohshima, T. Matsumoto and N. Kamata
- Organizer
  SPIE Photonic West, Gallium Nitride Materials and Devices XII (OE107)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent Progress of AlGaN-based Deep-UV LEDs2017
- Author(s)
  H. Hirayama　(Plenary Talk)
- Organizer
  8th Asian Pacific Workshop on Nitride Semiconductors (APWS 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Achievement of high-EQE (9.5%) AlGaN deep-UV LED using highly-reflective photonic crystal (HR-PhC) on p-contact layer2017
- Author(s)
  Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi and H. Hirayama
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Variable height active structure design THz QCLs operating at 3.7 THz with the maximum operation temperature 145 K2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 44th International Symposium on Compound Semiconductors (ISCS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of high-efficiency AlGaN deep-UV LEDs2017
- Author(s)
  H. Hirayama
- Organizer
  International Foulum on Widegap Semiconductors 2017 (IFWS2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of high-power THz-QCLs2017
- Author(s)
  T. T. Lin, K. Wang, L. Wang, K. Fukuda and H. Hirayama
- Organizer
  理研シンポジウム　第5回「光量子工学」
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 深紫外LEDの高効率光取り出し技術2017
- Author(s)
  鹿嶋行雄、平山秀樹
- Organizer
  光とレーザーの科学技術フェア2017
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress and future prospect of AlGaN deep-UV LEDs2017
- Author(s)
  H. Hirayama　(Tutrial Talk)
- Organizer
  International Workshop on UV Materials and Devices 2017 (IWUMD2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Si基板上へのGaN系THz-QCL構造のMOCVD成長と評価2017
- Author(s)
  石黒稔也，藤川紗千恵，王科，前田哲利，町田龍人，藤代博記，平山秀樹
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] テラヘルツ量子カスケードレーザの進展と展望2017
- Author(s)
  平山秀樹
- Organizer
  レーザー学会
- Place of Presentation
  徳島大学（徳島県徳島市）
- Year and Date
  2017-01-07
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Over 10% EQE AlGaN Deep-UV LED developed by using Transparent p-AlGaN contact layer2017
- Author(s)
  H. Hirayama
- Organizer
  2017 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices (GJS 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of AlGaN-based deep-UV LEDs2017
- Author(s)
  H. Hirayama　(Plenary Talk)
- Organizer
  The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design of THz QCLs toward high output power by variable height active structure near liquid nitrogen temperature operation2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 7th Annual World Congress of Nano Science and Technology-2017 (Nano S&T-2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation with Dewar condenser2017
- Author(s)
  T. T. Lin, W. Terashima and H. Hirayama
- Organizer
  The 44th International Symposium on Compound Semiconductors (ISCS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaN系深紫外LED、LD開発の最近の動向、－国際会議報告などから2017
- Author(s)
  平山秀樹
- Organizer
  日本学術振興会第162委員会、第102回研究会
- Place of Presentation
  上智大学（東京都千代田区）
- Year and Date
  2017-03-02
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] フォトニック結晶深紫外LEDの実現～p型コンタクト層における高反射フォトニクス結晶によるAlGaN深紫外LEDの外部量子効率10%動作～2017
- Author(s)
  鹿嶋行雄，前田哲利，松浦恵理子，定昌史，岩井武，森田敏郎，小久保光典，田代貴晴，上村隆一郎，長田大和，倉島優一，高木秀樹，平山秀樹
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Waveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
- Author(s)
  K. Wang, T. T. Lin, W. Terashima and H. Hirayama
- Organizer
  14th International Conference on Intersubband Transitions in Quantum Wells (ITQW2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] THz-QCL designs for high-temperature operation far acrossing the KT limitation2017
- Author(s)
  L. Wang, T. T. Lin, K. Wang and H. Hirayama
- Organizer
  理研シンポジウム　第5回「光量子工学」
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent Progress of High-Efficiency AlGaN Deep-UV LED2017
- Author(s)
  H. Hirayama, Y. Kashima, E. Matsuura, H. Takagi, N. Maeda, M. Jo, T. Iwai, M. Kokubo, T. Tashiro, R. Kamimura and Y. Osada
- Organizer
  Europien Material Research Society (E-MRS) Fall Meeting 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Development of UVB LED for medical applications2017
- Author(s)
  M. Ajmal Khan, Y. Itokazu, T. Matsumoto, S. Minami, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  理研シンポジウム　第5回「光量子工学」
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Calculation of optical gain and design of low waveguide loss for GaN terahertz quantum cascade lasers2017
- Author(s)
  K. Wang, T. T. Lin, L. Wang, J. Yun, W. Terashima and H. Hirayama
- Organizer
  理研シンポジウム　第5回「光量子工学」
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Current status and future of III-nitride ultraviolet and THz emitters2017
- Author(s)
  H. Hirayama, M. Jo, W. Terashima, N. Maeda, T. T. Lin, and K. Wang
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation with Dewar condenser2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 44th International Symposium on Compound Semiconductors (ISCS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN深紫外LEDの最近の進展と展望2017
- Author(s)
  平山秀樹
- Organizer
  第3回JLEDSセミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 紫外線LEDの開発と今後の展望2017
- Author(s)
  平山秀樹
- Organizer
  オプトロニクス社　赤外・紫外特別セミナー
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN系深紫外LEDの最近の進展と展望2017
- Author(s)
  平山秀樹
- Organizer
  ナノ茶論
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Achievement of extremely high WPE (9.6%) of AlGaN deep-UV LED by using transparent contact layer, reflective electrode and lens2017
- Author(s)
  H. Hirayama, T. Shibata, Y. Kashima, E. Matsuura, H. Takagi, N. Maeda, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura and Y. Osada
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Current status and next challenges for GaN-based QCLs2017
- Author(s)
  Ke Wang, W. Terashima, T. T. Lin and H. Hirayama
- Organizer
  第3回理研-NICT合同テラヘルツワークショップ/第17回ミリ波サブミリ波受信機ワークショップ
- Place of Presentation
  情報通信研究機構（東京都小金井市）
- Year and Date
  2017-02-27
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] aveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
- Author(s)
  K. Wang, T. T. Lin, W. Terashima and H. Hirayama
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 250 mW output power operation of GaAs-based THz quantum cascade lasers2017
- Author(s)
  T. T. Lin, W. Terashima and H. Hirayama
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Waveguide design for GaN/AlGaN terahertz quantum cascade lasers2017
- Author(s)
  K. Wang, T. T. Lin, W. Terashima and H. Hirayama
- Organizer
  14th International Conference on Intersubband Transitions in Quantum Wells (ITQW2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 殺菌・医療を目指した紫外線LEDの開発2017
- Author(s)
  平山秀樹
- Organizer
  第39回日本光医学・光生物学会研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] THz quantum cascade lasers toward high output power near liquid nitrogen temperature operation2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  14th International Conference on Intersubband Transitions in Quantum Wells (ITQW2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] EQE enhancement dependency on reflective p-type electrode of Ni/Mg and Rh in AlGaN UVC LED with transparent p-AlGaN contact layer2017
- Author(s)
  N. Maeda, J. Yun, M. Jo and H. Hirayama
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design of indirect injection scheme THz QCLs with high operation temperature2017
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  The 44th International Symposium on Compound Semiconductors (ISCS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 深紫外LED高効率化の進展と展望2017
- Author(s)
  平山秀樹
- Organizer
  光とレーザーの科学技術フェア2017
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] m面サファイア上半極性のアニールによる高品質化2017
- Author(s)
  定昌史，南聡史，平山秀樹
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Current status and future of III-nitride ultraviolet and THz emitters2017
- Author(s)
  H. Hirayama, M. Jo, W. Terashima, N. Maeda, T. T. Lin, and K. Wang
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Improvement of light-extraction efficiency of AlGaN UVC-LEDs by using superlattice hole spreading layer and Al reflector2017
- Author(s)
  N. Maeda, M. Jo and H. Hirayama
- Organizer
  The 44th International Symposium on Compound Semiconductors (ISCS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] m面サファイア基板上半極性AlNの面方位制御とX線回折評価2017
- Author(s)
  定昌史，南聡史，平山秀樹
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Current Status and Future of III-Nitride Ultraviolet and THz Emittres2016
- Author(s)
  H. Hirayama
- Organizer
  International Workshop on Nitiride Semiconductors (IWN 2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Modulation active structure design indirect injection sheme THz QCLs2016
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  EMN Meeting on Terahertz 2016
- Place of Presentation
  San Sebastian, Spain.
- Year and Date
  2016-05-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 高出力THz QCLの最近の進展2016
- Author(s)
  林宗澤，寺嶋亘，平山秀樹
- Organizer
  第13回エクストリームフォトニクス研究会
- Place of Presentation
  ホテル竹島（愛知県蒲郡市）
- Year and Date
  2016-11-14
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] m面サファイア基板上半導性AlGaN/AlNの結晶成長と量子井戸発光特性2016
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  電子情報通信学会　レーザエレクトロニクス研究会
- Place of Presentation
  京都大学桂キャンパス（京都府京都市）
- Year and Date
  2016-12-13
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent Progress of AlGaN Deep-UV LEDs2016
- Author(s)
  H. Hirayama, M. Jo, N. Maeda and N. Kamata
- Organizer
  IS-Plasma 2016 / IC-PLANTS2016
- Place of Presentation
  名古屋大学東山キャンパス（名古屋市千種区）
- Year and Date
  2016-03-08
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent progress of GaN-based　terahertz quantum cascade lasers2016
- Author(s)
  W. Terashima, T. T. Lin and Hideki Hirayama
- Organizer
  5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies (RJUSE TeraTech-2016)
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2016-11-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 光取出し効率改善による高効率(>10％)深紫外LEDの実現2016
- Author(s)
  前田哲利，定昌史，高野隆好，阪井淳，美濃卓哉，椿健治，大島一晟，松本卓磨，鎌田憲彦，鹿島行雄，松浦恵理子，平山秀樹
- Organizer
  第4回「光量子工学研究 - 若手・中堅研究者から見た光量子工学の展開 -」
- Place of Presentation
  理化学研究所（埼玉県和光市
- Year and Date
  2016-11-01
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 310nm帯紫外LED用Ga2O3 (-201)基板上AlGaN (0001)エピタキシャル膜の成長2016
- Author(s)
  森島嘉克，平山秀樹，飯塚和幸，山崎進一，西村良男，山腰茂伸
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Progress of high-power (250 mW) quantum cascade lasers2016
- Author(s)
  Tsung-Tse Lin, Wataru Terashima and Hideki Hirayama
- Organizer
  RAPAC2016
- Place of Presentation
  ヒルトン東京（東京都新宿区）
- Year and Date
  2016-08-02
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] THz quantum cascade laser toward high output power near liquid nitrogen temperature operation with dewar condenser2016
- Author(s)
  T. Lin, W. Terashima and H. Hirayama
- Organizer
  The 41th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2016)
- Place of Presentation
  Copenhargen, Denmark.
- Year and Date
  2016-09-25
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 半導体光デバイスの基礎と今後－青色LEDから深紫外LED、LD、QCLへ－2016
- Author(s)
  平山秀樹
- Organizer
  第63回応用物理学会春期学術講演会チュートリアル講演
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-19
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 化合物半導体を用いた未開拓波長光デバイス，深紫外LED及びTHz-QCLの開発2016
- Author(s)
  平山秀樹
- Organizer
  産総研シンポジウム
- Place of Presentation
  秋葉原UDXカンファレンス（東京都千代田区）
- Year and Date
  2016-02-19
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Future of III-Nitrides-Efficient UVC Emitter and Terahertz QCLs2016
- Author(s)
  H. Hirayama
- Organizer
  Phtonics Conferense 2016
- Place of Presentation
  Phoenix Park, Korea.
- Year and Date
  2016-11-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 半導体発光デバイス未踏領域の進展と展望2016
- Author(s)
  平山秀樹
- Organizer
  理研・分子研合同研究会　第13回エクストリーム・フォトニクス
- Place of Presentation
  ホテル竹島（愛知県蒲郡市）
- Year and Date
  2016-11-14
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Effect of patterned-Si substrate on crystalline quality of AlN template2016
- Author(s)
  B. T. Tran, H. Hirayama, N. Maeda, M. Jo, D, Inoue and T. Kikitsu
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-08-09
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates2016
- Author(s)
  I. Oshima, T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates2016
- Author(s)
  I. Oshima, T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Improvement of AlN crystal quality on Si substrate for deep UV-LED Applications2016
- Author(s)
  B. T. Tran, H. Hirayama, N. Maeda, M. Jo, D. Inoue and T. Kikitsu
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 光取出し効率の向上による高出力UVCLEDの実現2016
- Author(s)
  平山秀樹
- Organizer
  光とレーザーの科学技術フェア2016、紫外線セミナー
- Place of Presentation
  科学技術館（東京都千代田区）
- Year and Date
  2016-11-16
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] THz量子カスケードレーザの進展と展望2016
- Author(s)
  平山秀樹
- Organizer
  第140回微小光学研究会
- Place of Presentation
  日本女子大学（東京都文京区）
- Year and Date
  2016-07-19
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] THz量子カスケードレーザの進展と展望2016
- Author(s)
  平山秀樹
- Organizer
  第140回微小光学研究会
- Place of Presentation
  日本女子大学（東京都文京区）
- Year and Date
  2016-07-19
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] テラヘルツ量子カスケードレーザの進展と今後の展望2016
- Author(s)
  平山秀樹、寺嶋亘、林宗澤
- Organizer
  応用物理学会・テラヘルツ電磁波技術究例会
- Place of Presentation
  東京大学生産技術研究所（東京都目黒区）
- Year and Date
  2016-06-16
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaN系深紫外LEDの進展と展望2016
- Author(s)
  平山秀樹、高野隆好、阪井淳、美濃卓哉、椿健治、定昌史、前田哲利、大島一晟、松本卓磨、鎌田憲彦、鹿嶋行雄、松浦恵里子
- Organizer
  電子情報通信学会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2016-09-20
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Progress of high-power (250 mW) quantum cascade lasers2016
- Author(s)
  Tsung-Tse Lin, Wataru Terashima and Hideki Hirayama
- Organizer
  RAPAC2016
- Place of Presentation
  ヒルトン東京（東京都新宿区）
- Year and Date
  2016-08-02
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN系深紫外レーザーダイオード（LD）実現への進展2016
- Author(s)
  松本卓磨, 大島一晟, 前田哲利, 定昌史, 鎌田憲彦, 平山秀樹
- Organizer
  第4回「光量子工学研究 - 若手・中堅研究者から見た光量子工学の展開 -」
- Place of Presentation
  理研和光地区
- Year and Date
  2016-11-01
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 高出力（250mW）THz量子カスケードレーザーの進展2016
- Author(s)
  林宗澤，平山秀樹
- Organizer
  第4回「光量子工学研究-若手・中堅研究者から見た光量子工学の展開-」
- Place of Presentation
  理化学研究所（埼玉県和光市）
- Year and Date
  2016-11-01
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] THz quantum cascade lasers toward high output power operation2016
- Author(s)
  林宗澤，寺嶋亘，平山秀樹
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Progress of THz Quantum Cascade Laser using Nitride Semiconductor2016
- Author(s)
  H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
- Organizer
  74th Device Research Conference (DRC 2016)
- Place of Presentation
  Newark, USA.
- Year and Date
  2016-06-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Growth of deep-UV (11-22) AlGaN quantum wells on m-plane (1-100) sapphire substrates2016
- Author(s)
  T. Matsumoto, I. Oshima, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Realization of Unexplored Frequancy Terahertz Quantum Cascade Lasers by using III Nitride Semiconductors2016
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  The 25th International Semiconductor Laser Conference (ISLC2016)
- Place of Presentation
  神戸マリンパークオリエンタルホテル（兵庫県神戸市）
- Year and Date
  2016-09-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Improvement of AlN crystal quality on Si substrate for deep UV-LED Applications2016
- Author(s)
  B. T. Tran, H. Hirayama, N. Maeda, M. Jo, D. Inoue and T. Kikitsu
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Approaches towards realizing Deep-UV Laser Diodes (LDs) by controlling p-AlGaN Layers2016
- Author(s)
  T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  RAPAC2016
- Place of Presentation
  ヒルトン東京（東京都新宿区）
- Year and Date
  2016-08-02
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Current Status and Future of III-Nitride Ultraviolet and THz Emittres2016
- Author(s)
  H. Hirayama
- Organizer
  International Workshop on Nitiride Semiconductors (IWN 2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Progress of GaN/AlGaN THz-quantum cascade lasers2016
- Author(s)
  H. Hirayama and W. Terashima
- Organizer
  2016 SPIE Photonic West
- Place of Presentation
  San Francisco, U.S.A.
- Year and Date
  2016-02-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Future of III-Nitrides-Efficient UVC Emitter and Terahertz QCLs2016
- Author(s)
  H. Hirayama
- Organizer
  Phtonics Conferense 2016
- Place of Presentation
  Phoenix Park, Korea.
- Year and Date
  2016-11-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] p型AlGaNコンタクト層を用いた深紫外LEDの注入効率に関する検討2016
- Author(s)
  定昌史、平山秀樹
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] THz quantum cascade laser toward high output power near liquid nitrogen temperature operation with dewar condenser2016
- Author(s)
  T. Lin, W. Terashima and H. Hirayama
- Organizer
  The 41th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2016)
- Place of Presentation
  Copenhargen, Denmark.
- Year and Date
  2016-09-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Effect of patterned-Si substrate on crystalline quality of AlN template2016
- Author(s)
  B. T. Tran, H. Hirayama, N. Maeda, M. Jo, D, Inoue and T. Kikitsu
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-08-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaN系深紫外LD実現へ向けた試み2016
- Author(s)
  松本卓磨, 大島一晟, 前田哲利, 定昌史, 鎌田憲彦, 平山秀樹
- Organizer
  第5回結晶工学未来塾
- Place of Presentation
  東京農工大学（東京都府中市）
- Year and Date
  2016-11-07
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Realization of Unexplored Frequancy Terahertz Quantum Cascade Lasers by using III Nitride Semiconductors2016
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  The 25th International Semiconductor Laser Conference (ISLC2016)
- Place of Presentation
  神戸マリンパークオリエンタルホテル（兵庫県神戸市）
- Year and Date
  2016-09-12
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] UVC-LDエピ構造への高密度電流注入の試み2016
- Author(s)
  松本卓磨、大島一晟、前田哲利、定昌史、鎌田憲彦、平山秀樹
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Realization of Over 10 % EQE AlGaN Deep-UV LED by using Transparent p-AlGaN Contact Layer2016
- Author(s)
  H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata
- Organizer
  The 25th International Semiconductor Laser Conference (ISLC2016)
- Place of Presentation
  神戸マリンパークオリエンタルホテル（兵庫県神戸市）
- Year and Date
  2016-09-12
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] m面サファイア基板上半極性AlGaN/AlN層の結晶成長とドーピング及び量子井戸発光特性2016
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] m面サファイア基板上半導性AlGaN/AlNの結晶成長と量子井戸発光特性2016
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  電子情報通信学会　レーザエレクトロニクス研究会
- Place of Presentation
  京都大学桂キャンパス（京都府京都市）
- Year and Date
  2016-12-13
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Design of p-AlGaN layers for efficient carrier injection in DUV LEDs2016
- Author(s)
  M. Jo and H. Hirayama
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Fabrication of a-plane AlGaN quantum wells on r-plane sapphire2016
- Author(s)
  M. Jo and H. Hirayama
- Organizer
  Compound Semiconductor Week 2016 (CSW2016)
- Place of Presentation
  とやま国際センター（富山県富山市）
- Year and Date
  2016-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 高出力THz QCLの最近の進展2016
- Author(s)
  林宗澤，寺嶋亘，平山秀樹
- Organizer
  理研・分子研合同研究会　第13回エクストリーム・フォトニクス
- Place of Presentation
  ホテル竹島（愛知県蒲郡市）
- Year and Date
  2016-11-14
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] テラヘルツ量子カスケードレーザの進展と今後の展望2016
- Author(s)
  平山秀樹，寺嶋亘，林宗澤
- Organizer
  第63回応用物理学会春期学術講演会シンポジウム
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-21
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 高出力（250mW）THz量子カスケードレーザーの進展2016
- Author(s)
  林宗澤，平山秀樹
- Organizer
  第4回「光量子工学研究 - 若手・中堅研究者から見た光量子工学の展開 -」
- Place of Presentation
  理化学研究所（埼玉県和光市）
- Year and Date
  2016-11-01
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 半極性結晶を用いたUVC-LEDへの進展2016
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  第5回結晶工学未来塾
- Place of Presentation
  東京農工大学（東京都府中市）
- Year and Date
  2016-11-07
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] Recent progress of GaN-based　terahertz quantum cascade lasers2016
- Author(s)
  W. Terashima, T. T. Lin and Hideki Hirayama
- Organizer
  5th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies (RJUSE TeraTech-2016)
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2016-11-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 紫外透明p型AlGaNコンタクト層を用いた高効率深紫外LEDの開発2016
- Author(s)
  美濃卓哉，平山秀樹，高野隆好，後藤浩嗣，植田充彦，椿健治
- Organizer
  電子情報通信学会　レーザエレクトロニクス研究会
- Place of Presentation
  京都大学桂キャンパス（京都府京都市）
- Year and Date
  2016-12-13
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] AlGaN系深紫外LEDの進展と展望2016
- Author(s)
  平山秀樹
- Organizer
  太陽紫外線防御研究委員会第26回シンポジウム
- Place of Presentation
  グランフロント大阪（大阪市北区）
- Year and Date
  2016-03-04
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 半極性AlN基板を用いた高効率LEDの開発2016
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  第4回「光量子工学研究 - 若手・中堅研究者から見た光量子工学の展開 -」
- Place of Presentation
  理研和光地区
- Year and Date
  2016-11-01
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 半極性AlN基板を用いた高効率LEDの開発2016
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  第4回「光量子工学研究-若手・中堅研究者から見た光量子工学の展開-」
- Place of Presentation
  理化学研究所（埼玉県和光市）
- Year and Date
  2016-11-01
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] n-AlGaNバッファー層の2段化によるAlGaN 系DUV LEDの高効率化2016
- Author(s)
  前田哲利、Tran Tinh、定昌史、平山秀樹
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス（東京都目黒区）
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Growth of deep-UV (11-22) AlGaN quantum wells on m-plane (1-100) sapphire substrates2016
- Author(s)
  T. Matsumoto, I. Oshima, N. Maeda, M. Jo, N. Kamata and H. Hirayama
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, USA.
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] 半導体発光デバイス未踏領域の進展と展望2016
- Author(s)
  平山秀樹
- Organizer
  理研・分子研合同研究会第13回エクストリーム・フォトニクス
- Place of Presentation
  ホテル竹島（愛知県蒲郡市）
- Year and Date
  2016-11-14
- Invited
- Data Source
  KAKENHI-PLANNED-16H06420
[Presentation] テラヘルツ量子カスケードレーザの最近の進展2016
- Author(s)
  寺嶋亘、林宗澤、平山秀樹
- Organizer
  レーザーカオス研究会
- Place of Presentation
  おくとろ温泉やまのやど（和歌山県東牟婁郡）
- Year and Date
  2016-05-13
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 無極性a面AlNの高温成長と深紫外LEDへの応用2015
- Author(s)
  定昌史，平山秀樹
- Organizer
  理研シンポジウム第3回「光量子工学研究」
- Place of Presentation
  理化学研究所和光地区（埼玉県和光市）
- Year and Date
  2015-11-12
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] p型AlGaN透明コンタクト層を用いた深紫外LEDの注入機構最適設計2015
- Author(s)
  定昌史，平山秀樹
- Organizer
  理研シンポジウム第3回「光量子工学研究」
- Place of Presentation
  理化学研究所和光地区（埼玉県和光市）
- Year and Date
  2015-11-12
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Development of unexplored frequency semiconductor light sources; deep-UV LEDs and THz-QCLs2015
- Author(s)
  H. Hirayama
- Organizer
  WPI-AIMR
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2015-10-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Precise growth control for AlGaN/GaN Superlattices by MBE and MOCVD for developing GaN-based THz quantum cascade lasers2015
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  EMN 3CG
- Place of Presentation
  Hong Kong, China
- Year and Date
  2015-12-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Growth of AlN template and AlGaN MQWs on micro-circle patterned Si substrate2015
- Author(s)
  B. T. Tran, H. Hirayama, N. Maeda and M. Jo
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaN窒化物半導体の結晶品質向上とデバイス化技術，深紫外LEDの応用展開2015
- Author(s)
  平山秀樹
- Organizer
  サイエンス＆テクノロジー社セミナー
- Place of Presentation
  大井町きゅりあん（東京都品川区）
- Year and Date
  2015-08-27
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 接注入機構を用いたTHz QCL高温動作の進展2015
- Author(s)
  林宗澤，平山秀樹
- Organizer
  理研シンポジウム第3回「光量子工学研究」
- Place of Presentation
  理化学研究所和光地区（埼玉県和光市）
- Year and Date
  2015-11-12
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 未踏波長半導体デバイス－深紫外LEDとTHz-QCLの進展－2015
- Author(s)
  平山秀樹
- Organizer
  電気学会パワー光源産業技術調査専門委員会研究会
- Place of Presentation
  自動車会館（東京都千代田区）
- Year and Date
  2015-10-16
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Development of high-quality AlN crystals on patterned Si substrates for deep-UV LEDs2015
- Author(s)
  B. T. Tran, N. Maeda and H. Hirayama
- Organizer
  理研シンポジウム第3回「光量子工学研究」
- Place of Presentation
  理化学研究所和光地区（埼玉県和光市）
- Year and Date
  2015-11-12
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Modulation barrier design AlxGa1-xAs/GaAs terahertz quantum cascade lasers2015
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  ITQW2015
- Place of Presentation
  Vienna, Austria
- Year and Date
  2015-09-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] テラヘルツ量子カスケードレーザの最近の進展2015
- Author(s)
  林宗澤，寺嶋亘，平山秀樹
- Organizer
  平成27年電気学会電子・情報・システム部門大会
- Place of Presentation
  長崎大学（長崎県長崎市）
- Year and Date
  2015-08-26
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 「未来の光」深紫外線，テラヘルツ光の魅力2015
- Author(s)
  平山秀樹
- Organizer
  三鷹ネットワーク大学講座
- Place of Presentation
  三鷹ネットワーク大学（東京都三鷹市）
- Year and Date
  2015-06-18
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] サファイア加工基板上AlNの結晶成長とそれを用いた深紫外LEDの実現2015
- Author(s)
  金沢裕也，松本卓磨，鎌田憲彦，前田哲利，定昌史，平山秀樹
- Organizer
  理研シンポジウム第3回「光量子工学研究」
- Place of Presentation
  理化学研究所和光地区（埼玉県和光市）
- Year and Date
  2015-11-12
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent progress AlGaN deep-UV LEDs by improving light-extraction efficiency2015
- Author(s)
  H. Hirayama
- Organizer
  2015 IEEE Photonics Society Summer Topical Meeting Series
- Place of Presentation
  Nassau, Bahamas
- Year and Date
  2015-07-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent progress of THz-QCLs using nitride-based semiconductors2015
- Author(s)
  H. Hirayama and W. Terashima
- Organizer
  SPIE Optics + Photonics 2015
- Place of Presentation
  San Diego, U.S.A.
- Year and Date
  2015-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Indirect injection scheme THz QCLs with high operation temperature2015
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  EMN meeting on Vacuum Electronics
- Place of Presentation
  Las Vegas, U.S.A.
- Year and Date
  2015-11-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] GaN/AlGaN系量子カスケードレーザの5.76THz，40Kにおける動作2015
- Author(s)
  寺嶋亘，平山秀樹
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 無極性m面サファイア上AlGaN/AlNの結晶成長と深紫外発行特性2015
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  理研シンポジウム第3回「光量子工学研究」
- Place of Presentation
  理化学研究所和光地区（埼玉県和光市）
- Year and Date
  2015-11-12
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Progress of THz quantum cascade laser using nitride semiconductors2015
- Author(s)
  H. Hirayama and W. Terashima
- Organizer
  ICNS-11
- Place of Presentation
  Beijing, China
- Year and Date
  2015-09-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] テラヘルツ量子カスケードレーザの進展と今後の展望2015
- Author(s)
  平山秀樹
- Organizer
  量子現象利用デバイス技術分科会
- Place of Presentation
  電子情報技術産業協会会議室（東京都千代田区）
- Year and Date
  2015-12-07
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Ga2O3 (-201)基板上AlGaN (0001)エピタキシャル膜の成長2015
- Author(s)
  森島嘉克、平山秀樹、山下佳弘、飯塚和幸、倉又朗人、山腰茂伸
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、東京都渋谷区
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] High-quality AlN template for deep-UV LEDs grown on facet controlled patterned sapphire substrate (FC-PSS)2015
- Author(s)
  Y. Kanazawa, H. Hirayama, N. Maeda, M. Jo, N. Kamata, Y. Kashima, E. Matsuura, S. Shimatani, M. Kokubo, T. Tashiro, T. Ohkawa, R. Kamimura and Y. Osada
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Direct growth of thick AlN template on micro-circle patterned-Si substrate2015
- Author(s)
  B. T. Tran, H. Hirayama, N. Maeda, M. Jo, and S. Toyoda
- Organizer
  CLEO Pacific Rim 2015
- Place of Presentation
  Busan, Korea
- Year and Date
  2015-08-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Growth and optical properties of semi-polar AlN/AlGaN layers grown on m-plane sapphire substrates2015
- Author(s)
  I. Ohshima, M. Jo, N. Maeda, N. Kamata and H. Hirayama
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 未踏の光テラヘルツの地形を拓く－テラヘルツ量子カスケードレーザの開発－2015
- Author(s)
  平山秀樹
- Organizer
  平成27年度「理研と親しむ会」第23回講演会
- Place of Presentation
  理化学研究所仙台地区（宮城県仙台市）
- Year and Date
  2015-07-27
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] m 面サファイア基板上半極性AlN/AlGaN 層の結晶成長と光学特性2015
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] GaN系未開拓波長QCLの進展2015
- Author(s)
  寺嶋亘，平山秀樹
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2015-12-21
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] AlGaAs/GaAs quantum cascade lasers with modulation Al composition barriers design lasing at 3.7 THz, 145 K2015
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  FTT2015
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-09-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Growth of non-polar a-plane AlN on r-plane sapphire2015
- Author(s)
  M. Jo and H. Hirayama
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] GaN系THz-QCLの最近の進展2015
- Author(s)
  寺嶋亘，平山秀樹
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪市立大学（大阪府大阪市）
- Year and Date
  2015-11-27
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 無極性a面AlGaN/AlNの高温成長と深紫外発光特性2015
- Author(s)
  定昌史，平山秀樹
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪市立大学（大阪府大阪市）
- Year and Date
  2015-11-27
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] ファセット表面加工基板上に成長した深紫外LED 用高品質AlN テンプレート2015
- Author(s)
  金沢裕也，平山秀樹，前田哲利，定昌史，鎌田憲彦，鹿嶋行雄，松浦恵里子，嶋谷聡，小久保光典，田代貴晴，大川貴史，上村隆一郎，長田大和
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] r面サファイアを用いたa面AlNの高温成長2015
- Author(s)
  定昌史，平山秀樹
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Recent progress and future prospects of AlGaN deep-UV LEDs2015
- Author(s)
  H. Hirayama
- Organizer
  ISOM’15
- Place of Presentation
  富山国際会議場（富山県富山市）
- Year and Date
  2015-10-05
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] ウェットエッチングによるサファイア表面加工基板(PSS)を用いた深紫外LED用高品質AlNテンプレートの作製2015
- Author(s)
  金沢裕也、豊田史朗、大島一晟、鎌田憲彦、鹿島行雄、松浦恵里子、嶋谷聡、小久保光典、田代貴晴、大川貴史、上村隆一郎、長田大和、平山秀樹
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、東京都渋谷区
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 殺菌用深紫外LEDの進展と今後の展望2015
- Author(s)
  平山秀樹
- Organizer
  光とレーザーの科学技術フェア
- Place of Presentation
  科学技術館（東京都千代田区）
- Year and Date
  2015-11-19
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] m面サファイア上AlGaN/AlNの結晶成長と光学特性2015
- Author(s)
  大島一晟，定昌史，前田哲利，鎌田憲彦，平山秀樹
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪市立大学（大阪府大阪市）
- Year and Date
  2015-11-27
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 窒化物を用いた未開拓領域光デバイスの展望2015
- Author(s)
  平山秀樹
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県守山市）
- Year and Date
  2015-07-15
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] モジュレーションバリア構造を用いた3.7THz 145K量子カスケードレーザ2015
- Author(s)
  林宗澤，平山秀樹
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Up to 40 K lasing operation of 5.7 THz GaN/AlGaN quantum cascade laser2015
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Direct growth and controlled coalescence of thick AlN template on circle patterned-Si substrate2015
- Author(s)
  B. T. Tran, H. Hirayama, S. Toyoda and N. Maeda
- Organizer
  SPIE Optics + Photonics 2015
- Place of Presentation
  San Diego, U.S.A.
- Year and Date
  2015-08-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] THz quantum cascade lasers using nitride semiconductors2015
- Author(s)
  H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
- Organizer
  VI Workshop on Physics and Technologies of Semiconductor Lasers
- Place of Presentation
  Krakow, Poland
- Year and Date
  2015-10-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 「未来の光」深紫外線、テラヘルツ光の魅力2015
- Author(s)
  平山秀樹
- Organizer
  理研仙台一般公開セミナー
- Place of Presentation
  理化学研究所仙台地区（宮城県仙台市）
- Year and Date
  2015-08-01
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Growth and Optical Properties of AlN/AlGaN Heterostructures on Patterned Si Substrate2015
- Author(s)
  T. Tran，前田哲利，定昌史，平山秀樹
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 踏波長光デバイスを目指して－深紫外LEDとテラヘルツQCLの開発－2015
- Author(s)
  平山秀樹
- Organizer
  第38回光通信研究会
- Place of Presentation
  人材開発センター富士Calm（山梨県富士吉田市）
- Year and Date
  2015-08-08
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Fabrication of a 260-nm light-emitting diode with a transparent p-AlGaN layer2015
- Author(s)
  M. Jo, N. Maeda and H. Hirayama
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Characterization of thick AlN templates grown on micro-circle patterned-Si substrates2015
- Author(s)
  Tinh Tran、前田哲利、豊田史朗、平山秀樹
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、東京都渋谷区
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LEDにおける超格子p型AlGaN透明コンタクト層のホール拡散効果2015
- Author(s)
  前田哲利、定昌史、平山秀樹
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、東京都渋谷区
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] AlGaN系深紫外LED高効率化の進展と展望2015
- Author(s)
  平山秀樹，前田哲利，定昌史，鎌田憲彦
- Organizer
  第143回結晶工学分科会研究会
- Place of Presentation
  東京都市大学（東京都世田谷区）
- Year and Date
  2015-06-05
- Invited
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 特異構造結晶の導入による高効率深紫外デバイスとTHz-QCLの開発2015
- Author(s)
  平山秀樹、前田哲利、定昌史、寺嶋亘、豊田史朗、鎌田憲彦
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、東京都渋谷区
- Year and Date
  2015-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] GaN系THz-QCLの最近の進展2015
- Author(s)
  寺嶋亘，平山秀樹
- Organizer
  理研シンポジウム第3回「光量子工学研究」
- Place of Presentation
  理化学研究所和光地区（埼玉県和光市）
- Year and Date
  2015-11-12
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] The improvement of output power characteristics of THz QCLs in 77 K Dewar condenser2015
- Author(s)
  林宗澤，寺嶋亘，平山秀樹
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  東北大学（宮城県仙台市）
- Year and Date
  2015-12-21
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] Terahertz quantum-cascade laser based on III-nitride semiconductors2015
- Author(s)
  H. Hirayama and W. Terashima, S. Toyoda and N. Kamata
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松（静岡県浜松市）
- Year and Date
  2015-11-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05733
[Presentation] 深紫外LEDの開発と今後の展望2014
- Author(s)
  平山秀樹
- Organizer
  OPTICS & PHOTONICS International Congress 2014 (OPIC2014)
- Place of Presentation
  パシフィコ横浜、神奈川県横浜市
- Year and Date
  2014-04-24
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] ワイドギャップ窒化物半導体を用いた深紫外線LED技術2014
- Author(s)
  平山秀樹
- Organizer
  2014最先端実装技術シンポジウム
- Place of Presentation
  東京ビッグサイト、東京都江東区
- Year and Date
  2014-06-05
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] MOCVDを用いたGaN系QCLの結晶成長と評価2014
- Author(s)
  豊田史郎、寺嶋亘、鎌田憲彦、平山秀樹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] MOCVDを用いたGaN系QCLの結晶成長と評価2014
- Author(s)
  豊田史朗，寺嶋亘，鎌田憲彦，平山秀樹
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] AlGaN深紫外LEDとレーザーの可能性2014
- Author(s)
  平山秀樹
- Organizer
  2014年度第1回光材料・応用技術研究会
- Place of Presentation
  機械振興会館、東京都港区
- Year and Date
  2014-06-27
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Development of Highly-Uniform 270 nm Deep-Ultraviolet Light-Emitting Diodes2013
- Author(s)
  T. Mino, H. Hirayama, N. Noguchi, T. Takano and K. Tsubaki
- Organizer
  The 10th Conference on Lasers and Electro-Optics Pacific Rim, The 18th OptoElectronics and Communications Conference / Photonics in Switching 2013 (CLRO-PR & OECC/PS 2013)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Improvement of Light-Extraction Efficiency of Deep-UV LEDs using Transparent p-AlGaN Contact Layer2013
- Author(s)
  N. Maeda and H. Hirayama,
- Organizer
  he 10th Conference on Lasers and Electro-Optics Pacific Rim, The 18th OptoElectronics and Communications Conference / Photonics in Switching 2013 (CLRO-PR & OECC/PS 2013)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] AlN結合ピラーバッファーを用いた高効率深紫外LEDの検討2013
- Author(s)
  豊田史朗、鎌田憲彦、平山秀樹
- Organizer
  第１回光量子工学研究
- Place of Presentation
  埼玉　和光
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 270nm帯深紫外LEDの大面積形成2013
- Author(s)
  美濃卓哉、平山秀樹、野口憲路、高野隆好、椿健治
- Organizer
  情報通信学会、レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪大学吹田キャンパス
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] p-AlGaN透明コンタクト層の組成短波長化とDUV-LEDの高効率化2013
- Author(s)
  前田哲利、平山秀樹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 二波長励起PL 法を用いたInAlGaNの非発光再結合準位評価2013
- Author(s)
  村越尚樹，イスラムトウヒドル，福田武司，鎌田憲彦，平山秀樹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] Growth of Connected Pillar AlN Buffer for AlGaN Deep-UV LEDs2013
- Author(s)
  S. Toyoda, H. Hirayama, Y. Tomita and N. Kamata
- Organizer
  The 10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, DC
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Optical Detection of Nonradiative Recombination Centers in AlGaN Quantum Wells for Deep UV Region2013
- Author(s)
  A. Z. M. Touhidul Islam, N. Murakoshi, T. Fukuda, H. Hirayama and N. Kamata
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Wsshington.DC, USA
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] AlGaN Deep-UV LEDs using High-Al-Content (42-55%) p-AlGaN Contact Layer2013
- Author(s)
  N. Maeda and H. Hirayama
- Organizer
  The 10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, DC
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 結合ピラーAlNバッファーを用いた高効率深紫外LEDの検討2013
- Author(s)
  富田優志、豊田史朗、藤川紗千恵、鎌田憲彦、平山秀樹
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木、神奈川
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LEDバッファー用結合ピラーAlNの結晶成長2013
- Author(s)
  豊田史朗、富田優志、藤川紗千恵、鎌田憲彦、平山秀樹
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木、神奈川
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] AlGaN-based Deep-UV LEDs Fabricated on Connected-Pillar AlN Buffer2013
- Author(s)
  H. Hirayama, Y. Tomita, S. Toyoda, S. Fujikawa and N. Kamata
- Organizer
  The 10th Conference on Lasers and Electro-Optics Pacific Rim, The 18th OptoElectronics and Communications Conference / Photonics in Switching 2013 (CLRO-PR & OECC/PS 2013)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] p-AlGaN透明コンタクト層を用いた深紫外LEDの高効率化の実現2013
- Author(s)
  前田哲利、藤川紗千恵、平山秀樹
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  厚木、神奈川
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Realization of High-Efficiency Deep-UV LEDs using Transparent p-AlGaN Contact Layer2013
- Author(s)
  N. Maeda and H. Hirayama
- Organizer
  The 40th International Symposium on Compound Semiconductors (ISCS 2013)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LED用結合ピラーAINバッファーの改善2013
- Author(s)
  豊田史朗，水澤克哉，鎌田憲彦，平山秀樹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] 透明p型AlGaNコンタクト層を用いた高効率深紫外LEDの実現2013
- Author(s)
  前田哲利、平山秀樹
- Organizer
  第１回光量子工学研究
- Place of Presentation
  埼玉　和光
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LED用結合ピラーバッファーの改善2013
- Author(s)
  豊田史朗、水澤克哉、鎌田憲彦、平山秀樹
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LEDバッファー用結合ピラーAINの結晶成長技術の開拓2012
- Author(s)
  平山秀樹、富田優志、藤川紗千恵、豊田史朗、鎌田憲彦
- Organizer
  第5回公開シンポジウム光・光量子科学技術の新展開
- Place of Presentation
  富士ソフトアキバプラザ(東京)
- Year and Date
  2012-11-23
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] Development of High-Efficiency and Highly-Uniform AlGaN-Based Deep-UV Light-Emitting Diodes by 2-inch×3 Metalorganic Vapor Phase Epitaxy System2012
- Author(s)
  T. Mino, H. Hirayama, N. Noguchi, T. Takano, A. Murai, M. Yasuda and K. Tsubaki
- Organizer
  International Workshop on Nitride Semiconductors (IWN2012)
- Place of Presentation
  東札幌、札幌
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Development of AlGaN Deep-UV LEDs for Greentechnology Applications2012
- Author(s)
  H. Hirayama
- Organizer
  BIT’s 1st Annual World Congress of Greentech
- Place of Presentation
  Guangzhou, China
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] AlGaN 系深紫外LEDの高効率化への取り組み2012
- Author(s)
  富田優志、平山秀樹、藤川紗千恵、水澤克哉、豊田史朗、鎌田憲彦
- Organizer
  第5回公開シンポジウム光・光量子科学技術の新展開
- Place of Presentation
  富士ソフトアキバプラザ(東京)
- Year and Date
  2012-11-23
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] Progress of Deep-UV LEDs using AlGaN-based semiconductors2012
- Author(s)
  S. Fujikawa, N. Kamata and H. Hirayama
- Organizer
  The 2nd RIKEN-McGill University Scientific Workshop
- Place of Presentation
  和光、埼玉
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] フォトニック結晶を用いたAlGaN系深紫外LEDの高効率化2012
- Author(s)
  藤川紗千恵、平山秀樹、鹿嶋行、西原浩巳、田代貴晴、大川貴史、尹成圓、高木秀樹
- Organizer
  第73回応用物理;学会学術講演会
- Place of Presentation
  松山、愛媛
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] High-Efficiency AlGaN-based Deep-UV LEDs Realized by Improving Injection and Light-Extraction Efficiency2012
- Author(s)
  H. Hirayama, M. Akiba, Y. Tomita, S. Fujikawa and N. Kamata
- Organizer
  The 13^<th> Int. Symp. on Science and Technology of Lighting (LS-13),
- Place of Presentation
  Troy, NY, USA(招待講演)
- Year and Date
  2012-06-26
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] 結合ピラーAINバッファーを用いた高効率深紫外LEDの検討2012
- Author(s)
  平山秀樹、富田優志、藤川紗千恵、豊田史朗、鎌田憲彦
- Organizer
  第5回公開シンポジウム光・光量子科学技術の新展開
- Place of Presentation
  富士ソフトアキバプラザ(東京)
- Year and Date
  2012-11-23
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] High-Efficiency AlGaN-based Deep -V LEDs Realized by Improving Injection and Light-Extraction Efficiency2012
- Author(s)
  H. Hirayama, M. Akiba, Y. Tomita, S. Fujikawa and N. Kamata
- Organizer
  13th International Symposium on the Science and Technology of Lighting (LS13)
- Place of Presentation
  Troy, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Improvement of Light Extraction Efficiency of AlGaN Deep-UV LED using 2-Dimensional Photonic Crystal (2D-PhC)2012
- Author(s)
  S. Fujikawa, H. Hirayama, Y. Kashima, H. Nishihara, T. Tashiro, T. Ohkawa, S. W. Youn and H. Takagi
- Organizer
  International Workshop on Nitride Semiconductors (IWN2012)
- Place of Presentation
  東札幌、札幌
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Improvement of Light Extraction Efficiency of AlGaN Deep-UV LED using 2-Dimensional Photonic Crystal (2D-PhC)2012
- Author(s)
  S. Fujikawa, H. Hirayama, Y. Kashima, H. Nishihara, T. Tashiro, T. Ohkawa, S. W. Youn and H. Takagi
- Organizer
  The 4th International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 多重量子障壁を用いた230nm帯短波長・高効率深紫外LEDの実現2012
- Author(s)
  平山秀樹、藤川紗千恵、鎌田憲彦
- Organizer
  第5回公開シンポジウム光・光量子科学技術の新展開
- Place of Presentation
  富士ソフトアキバプラザ(東京)
- Year and Date
  2012-11-23
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] 220-350mm帯AlGaN系深紫外LEDのこれまでの進展2012
- Author(s)
  平山秀樹、藤川紗千恵、前田哲利、富田優志、水澤克哉、豊田史朗、鎌田憲彦
- Organizer
  第5回公開シンポジウム光・光量子科学技術の新展開
- Place of Presentation
  富士ソフトアキバプラザ(東京)
- Year and Date
  2012-11-23
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] Optical Characterization of Non-Radiative Centers and Improvement in Light Extraction Efficiency of Deep UV-LEDs2012
- Author(s)
  N. Kamata, A. Z. M. Touhidul Islam, M. Akiba, K. Igarashi, N. Murakoshi, T. Fukuda and H. Hirayama
- Organizer
  Proc. 5th Lighting Conf. of China, Japan and Korea
- Place of Presentation
  東海大学高輪キャンパス(招待講演)
- Year and Date
  2012-08-24
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] Recent Progress and Future Prospects of AlGaN-based Deep-UV LEDs2012
- Author(s)
  H. Hirayama
- Organizer
  2012 German-Japanese-Spanish Joint Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  Berlin, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Recent Progress and Future Prospects of AlGaN-based Deep-UV LEDs2012
- Author(s)
  H. Hirayama
- Organizer
  LED 50th Anniversary Symposium
- Place of Presentation
  Illinois, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Au/Al-Metal Bonding Conditions for Double Metal Waveguide on GaN based Terahertz Quantum Cascade Laser Structure2011
- Author(s)
  S.Matsumoto, W.Terashima, T.Yasuda, H.Hirayama
- Organizer
  IRMMW-THz 2011
- Place of Presentation
  Houston, U.S.A.
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Reduction of Macro-Step Geometry and Abnormal Nuclei on AlN/Sapphire for use as Deep-UV LED Templates2011
- Author(s)
  N.Maeda, H.Hirayama, M.Akiba, N.Kamata
- Organizer
  9^<th> International Conference on Nitride Semiconductors (ICNS-9), PA1.18
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] AlGaN系深紫外LEDの進展と展望2011
- Author(s)
  平山秀樹
- Organizer
  電気学会パワー半導体レーザパワーLED応用技術調査専門委員会研究会
- Place of Presentation
  市ヶ谷/東京千代田区
- Year and Date
  2011-02-18
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Temperature dependence of threshold current density of GaAs/Al_xGa_(1-x)As terahertz quantum cascade lasers with different Al composition2011
- Author(s)
  T.T.Lin, H.Hirayama
- Organizer
  ITQW2011
- Place of Presentation
  Badesi, Italy
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Recent progress of THz quantum cascade lasers(invited)2011
- Author(s)
  H. Hirayama
- Organizer
  The 4th Japan-Korea Joint Workshop on Terahertz Technology
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Growth of Flat p-GaN Contact Layer by Pulse-Flow Method for High Light-Extraction AlGaN Deep-UV LEDs with Al Electrode2011
- Author(s)
  M. Akiba, Y. Tomita, Y. Tsukada, H. Hirayama, N. Maeda, N. Kamata
- Organizer
  Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
- Place of Presentation
  Toba, Mie, Japan
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Terahertz intersubband electroluminescence from GaN/AlGaN quantum cascade laser structure on AlGaN template2011
- Author(s)
  W.Terashima, H.Hirayama
- Organizer
  IRMMW-THz 2011
- Place of Presentation
  Houston, U.S.A.
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] AlGaN系紫外LEDの進展と展望2011
- Author(s)
  平山秀樹
- Organizer
  同志社大学界面現象研究センター研究会
- Place of Presentation
  同志社大学/京都市京田辺市
- Year and Date
  2011-01-06
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] A軸方向傾斜c面サファイア上に作製した高効率紫外LED2011
- Author(s)
  藤川紗千恵, 平山秀樹, 前田哲利
- Organizer
  2011春応用物理学会(第58回)
- Place of Presentation
  神奈川工科大学/神奈川県厚木市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] AlGaN系深紫外LEDの進展と今後の展望2011
- Author(s)
  平山秀樹
- Organizer
  文部科学省科学研究費補助金特定領域研究「窒化物光半導体のフロンティア」-材料洗剤能力の極限発現-公開シンポジウム
- Place of Presentation
  修善寺/静岡県
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] High-Efficiency Short-Wavelength AlGaN DUV LEDs Realized by Improving Injection Efficiency with MQB2011
- Author(s)
  H. Hirayama, Y. Tsukada, M. Akiba, Y. Tomita, S. Fujikawa, N. Maeda, N. Kamata
- Organizer
  Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
- Place of Presentation
  Toba, Mie, Japan
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] ELO-AlNテンプレートを用いたSi基板上深紫外LED2011
- Author(s)
  美濃卓哉, 高野隆好, 椿健治, 平山秀樹, 杉山正和
- Organizer
  2011春応用物理学会(第58回)
- Place of Presentation
  神奈川工科大学/神奈川県厚木市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Reduction of Macro-Step Geometry and Abnormal Nuclei on AlN/Sapphire for use as Deep-UV LED Templates2011
- Author(s)
  N. Maeda, H. Hirayama, M. Akiba, N. Kamata
- Organizer
  9th Int. Conf. on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Terahertz electroluminescence from intersubband levels in quantum cascade laser based on III-Nitride semiconductors2011
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  ITQW 2011
- Place of Presentation
  Badesi, Italy
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Significant reduction of threshold current density of GaAs/AlGaAs terahertz quantum cascade lasers by using high-Al-content AlGaAs barrier2011
- Author(s)
  T.T.Lin, L.Y.Ying, H.Hirayama
- Organizer
  IRMMW-THz 2011
- Place of Presentation
  Houston, U.S.A.
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Growth of Flat and Thin p-GaN Contact Layer by NH3 Pulse-flow Method for High Light-Extraction AlGaN Deep-UV LEDs2011
- Author(s)
  M.Akiba,Y.Tomita, H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
- Organizer
  9^<th> International Conference on Nitride Semiconductors (ICNS-9), F5.2
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-10
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Temperature dependence of threshold current density of GaAs/AlxGa(1-x) As terahertz quantum cascade lasers with different Al composition2011
- Author(s)
  T. T. Lin and H. Hirayama
- Organizer
  ITQW 2011
- Place of Presentation
  Badesi, Italy
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs2011
- Author(s)
  H. Hirayama, Y. Tsukada, M. Akiba, Y. Tomita, S. Fujikawa, N. Maeda, N. Kamata
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-10
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs2011
- Author(s)
  H.Hirayama, Y.Tsukada, M.Akiba, Y.Tomita, S.Fujikawa, N.Maeda, N.Kamata
- Organizer
  9^<th> International Conference on Nitride Semiconductors (ICNS-9), F4.1
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-10
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Recent progress of THz quantum cascade lasers2011
- Author(s)
  H.Hirayama
- Organizer
  The 4th Japan-Korea Joint Workshop on Terahertz Technology
- Place of Presentation
  Nagoya, Japan(招待講演)
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Au/Al-Metal Bonding Conditions for Double Metal Waveguide on GaN based Terahertz Quantum Cascade Laser Structure2011
- Author(s)
  S. Matsumoto, W. Terashima, T. Yasuda and H. Hirayama
- Organizer
  IRMMW-THz 2011
- Place of Presentation
  Houston, U. S. A
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Properties of GaAs/AlxGal-xAs terahertz quantum cascade lasers with different barrier composition2011
- Author(s)
  Tsung-Tse Lin, Leiying Ying, Hideki Hirayama
- Organizer
  2011春応用物理学会(第58回)
- Place of Presentation
  神奈川工科大学/神奈川県厚木市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Terahertz electroluminescence from intersubband levels in quantum caseade laser based on III-Nitride semiconductors2011
- Author(s)
  W.Terashima, H.Hirayama
- Organizer
  ITQW2011
- Place of Presentation
  Badesi, Italy
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Growth of Flat p-GaN Contact Layer by Pulse-Flow Method for Hig Light-Extraction AlGaN Deep-UV LEDs with Al Electrode2011
- Author(s)
  M.Akiba, Y.Tomita, Y.Tsukada, H.Hirayama, N.Maeda, N.Kamata
- Organizer
  Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
- Place of Presentation
  Toba, Mie, Japan
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Recent progress and future prospects of AlGaN based deep-UV LEDs2011
- Author(s)
  H.Hirayama
- Organizer
  German-Japanese-Spanish Workshop on Frontier Photonic and electronic Materials and Devices
- Place of Presentation
  Granada Spain
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 2.67-2.82 THz intersubband emission from GaN/AlGaN quantum cascade structure2011
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  ICNS-9
- Place of Presentation
  Glasgow, UK
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価2011
- Author(s)
  五十嵐航平、石岡亮、塚田悠介、福田武司、本多善太郎、平山秀樹、鎌田憲彦
- Organizer
  発光型/非発光型ディスプレイ合同研究会
- Place of Presentation
  高知工科大学
- Year and Date
  2011-01-28
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] MQBを用いた230nm帯短波長深紫外LEDの効率改善2011
- Author(s)
  塚田悠介, 平山秀樹, 秋葉雅弘, 富田優志, 前田哲利, 鎌田憲彦
- Organizer
  2011春応用物理学会(第58回)
- Place of Presentation
  神奈川工科大学/神奈川県厚木市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Growth of Flat and Thin p-GaN Contact Layer by NH3 Pulse-flow Method for High Light-Extraction AlGaN Deep-UV LEDs2011
- Author(s)
  M. Akiba, Y. Tomita, H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-10
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Significant reduction of threshold current density of GaAs/AlGaAs terahertz quantum cascade lasers by using high-Al-content AlGaAs barrier2011
- Author(s)
  T. T. Lin, L. Y. Ying and H. Hirayama
- Organizer
  IRMMW-THz 2011
- Place of Presentation
  Houston, U. S. A
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Terahertz intersubband electroluminescence from GaN/AlGaN quantum cascade laser structure on AlGaN template2011
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  IRMMW-THz 2011
- Place of Presentation
  Houston, U. S. A
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] AlGaN系紫外LEDの進展と展望2010
- Author(s)
  平山秀樹
- Organizer
  応用物理学会・応用電子物性分科会研究例会「紫外光デバイスの進展:材料物性と応用」
- Place of Presentation
  大阪大学銀杏会館/大阪府吹田市
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Progress of AlGaN-based Deep-UV LEDs using High-Quality AlN on Sapphire2010
- Author(s)
  H. Hirayama, Y. Tsukada, N. Kamata
- Organizer
  22th Int. Semiconductor Laser Conf.(ISLC2010)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] MQBを用いた高効率250nm帯AlGaN系深紫外LED2010
- Author(s)
  平山秀樹, 塚田悠介, 前田哲利, 鎌田憲彦
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学/三重県津市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] InAlGaN4元混晶を用いた280nm帯殺菌用途深紫外LEDの進展2010
- Author(s)
  藤川紗千恵, 平山秀樹
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の新展開第3回シンポジウム
- Place of Presentation
  日本科学未来館/東京都江東区
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] AlGaN Deep-UV LEDs using Multiquantum-Barrier2010
- Author(s)
  H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
- Organizer
  The 8th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing China
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] First achievement of deep-UV LEDs on Si wafer2010
- Author(s)
  S.Fujikawa, H.Hirayama
- Organizer
  22th International Semiconductor Laser Conference (ISLC2010)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] First Observation of Spontaneous Emission on Injection Current from GaN/AlGaN Terahertz-Quantum Cascade Laser2010
- Author(s)
  W.Terashima, H.Hirayama
- Organizer
  IWN2010
- Place of Presentation
  Florida, U.S.A.
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] High-Power Short-Wavelength AlGaN Deep-UV LEDs Realized by Improving Injection Efficiency2010
- Author(s)
  H. Hirayama, Y. Tsukada, M. Akiba, N. Maeda, N. Kamata
- Organizer
  Int. Workshop on Nitride Semicond.(IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] First Observation of Spontaneous Emission on Injection Current from GaN/AlGaN Terahertz-Quantum Cascade Laser2010
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  IWN2010
- Place of Presentation
  Florida, U. S. A
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Efficiency enhancement in 250nm-band AlGaN deep-UV LEDs using Multiquantum-barrier2010
- Author(s)
  H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
- Organizer
  The 3^<rd> International Symposium on Growth of III-Nitrides(ISGN-3)
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] High-Power Short-Wavelength AlGaN Deep-UV LEDs Realized by Improving Injection Efficiency2010
- Author(s)
  H.Hirayama, Y.Tsukada, M.Akiba, N.Maeda, N.Kamata
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Ni/Al高反射p型電極を用いたAlGaN深紫外LEDの高効率化2010
- Author(s)
  秋葉雅弘, 平山秀樹, 塚田悠介, 前田哲利, 鎌田憲彦
- Organizer
  2010秋応用物理学会(第71回)
- Place of Presentation
  長崎大学/長崎県長崎市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Progress of AlGaN-based Deep-UV LEDs using high-quality ALN on sapphire2010
- Author(s)
  H.Hirayama, Y.Tsukada, N.Kamata
- Organizer
  22th International Semiconductor Laser Conference(ISLC2010)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Recent progress of AlGaN based deep-UV LEDs2010
- Author(s)
  平山秀樹
- Organizer
  SPIE-Photonics West, Materials, Devices and Applications for Solid State Lighting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] AlGaN系紫外LEDの進展と展望2010
- Author(s)
  平山秀樹
- Organizer
  JEITA(電子情報技術産業協会)ワイドバンドギャップ半導体デバイス技術分科会研究会
- Place of Presentation
  JEITA/東京都千代田区
- Year and Date
  2010-11-10
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 窒化物半導体を用いた未踏周波数領域テラヘルツ帯量子カスケードレーザの開発研究2010
- Author(s)
  寺嶋亘、平山秀樹
- Organizer
  財団法人光科学技術振興財団平成19年度研究助成成果報告講演会(招待講演)
- Place of Presentation
  浜松
- Year and Date
  2010-03-04
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Efficiency Enhance-ment in 250 nm-band AlGaN Deep-UV LEDs using Multiquantum-Barrier2010
- Author(s)
  H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
- Organizer
  The 3rd Int. Symp. on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] 247-262nm AlGaN deep-UV LEDs using multiquantum-barrier2010
- Author(s)
  H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
- Organizer
  The 8^<th> International Symposium on Semiconductors Light Emitting Devices(ISSLED2010)
- Place of Presentation
  E3, Beijing, China
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Efficiency enhancementin AlGaN deep-UV LEDs using high-reflectivity Al-based p-type electrode2010
- Author(s)
  M.Akiba, H.Hirayama, Y.Tsukada, N.Maeda, N.kamata
- Organizer
  International Workshop on Nitride Semiconductors(IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Efficiency Enhancement in AlGaN Deep-UV LEDs using High-Reflectivity Al-based p-type Electrode(IWN2010ベストポスター賞)2010
- Author(s)
  M. Akiba, H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] RF-MBE Growth of Terahertz Quantum Cascade Structure on GaN Substrate using Droplets Elimination by Thermal Annealing Technique2010
- Author(s)
  W. Terashima, S. Matsumoto and H. Hirayama
- Organizer
  ISGN3
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Spontaneous Emission from GaN/AlGaN based Terahertz Quantum Cascade Laser Structure grown on GaN Substrate2010
- Author(s)
  W. Terashima and H. Hirayama
- Organizer
  IRMMW-THz 2010
- Place of Presentation
  Rome, Italy
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] 窒化物半導体を用いた未踏周波数領域テラヘルツ帯量子カスケードレーザの開発研究2010
- Author(s)
  寺嶋亘、平山秀樹
- Organizer
  財団法人光科学技術振興財団平成19年度研究助成成果報告講演会
- Place of Presentation
  浜松
- Year and Date
  2010-03-04
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Short-wavelength high-efficiency deep-UV LEDs realized by improving injection efficiency2010
- Author(s)
  H.Hirayama
- Organizer
  International Workshop on Nitride Semiconductors2010(IWM201)
- Place of Presentation
  Florida, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 247-262 nm A1GaN Deep-UVLEDs using Multiquantum-Barrier2010
- Author(s)
  H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
- Organizer
  The 8^<th> International Symposium on Semiconduc tors Light Emitting Devices (ISSLED2010), E3
- Place of Presentation
  Beijing China
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] 近未来の光、テラヘルツ光・深紫外光の魅力-くらしを変える新しい光と応用の広がり-2010
- Author(s)
  平山秀樹
- Organizer
  仙台市市民講座(講座仙台学2010)「仙台とくらし」
- Place of Presentation
  仙台国際センター/宮城県仙台市
- Year and Date
  2010-07-24
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 230-350nm帯InAlGaN系紫外高効率発光デバイスの研究2010
- Author(s)
  平山秀樹
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域、光・光量子科学技術の新展開、第三回公開シンポジウム
- Place of Presentation
  日本科学未来館/東京都江東区
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] AlGaN系紫外LEDの進展と展望2010
- Author(s)
  平山秀樹
- Organizer
  月刊OPTRONICS主催グリーンフォトニクス特別セミナー
- Place of Presentation
  東京都立産業貿易センター/東京都港区
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Si基板上290nm帯InAlGaN深紫外LEDの実現2010
- Author(s)
  藤川紗千恵, 平山秀樹
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学/三重県津市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 光取り出し効率改善によるAlGaN系深紫外LEDの高効率化2010
- Author(s)
  秋葉雅弘, 平山秀樹, 塚田悠介, 鎌田憲彦
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の新展開第3回シンポジウム.
- Place of Presentation
  日本科学未来館/東京都江東区
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Efficiency Enhancement in AlGaN Deep-UV LEDs using High-Refle ctivity Al-based p-type Electrode (IWN2010ベストポスター賞受賞)2010
- Author(s)
  M.Akiba, H.Hirayama, Y.Tsukada N.Maeda, N.Kamata
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Efficiency Enhancement in 250 nm-band AlGaN Deep-UV LEDs using Multiquantum-Barrier2010
- Author(s)
  H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
- Organizer
  The 3^<rd> International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] AlGaN系深紫外LEDの高効率化2010
- Author(s)
  平山秀樹
- Organizer
  電子情報通信学会ソサイエティ大会シンポジウムレーザー量子エレクトロニクス研究会
- Place of Presentation
  大阪府立大学/大阪府堺市
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Realization of InAlGaN QW deep-UV LEDs on Si(111) Substrates2010
- Author(s)
  S.Fujikawa, H.Hirayama
- Organizer
  International Workshop on Nitride Semiconductors(IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Design of multiquantum-barrier electron-blocking layer for 230-280nm-band AlGaN deep-UV LEDs2010
- Author(s)
  Y.Tsukada, H.Hirayama, N.Kamata
- Organizer
  The 8^<th> International Symposium on Semiconductors Light Emitting Devices(ISSLED2010)
- Place of Presentation
  I5, Beijing China
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] GaN/AlGaN Thz-QCLからの電力注入による事前放出光の観測2010
- Author(s)
  寺嶋亘, 平山秀樹
- Organizer
  2010秋応用物理学会(第71回)
- Place of Presentation
  長崎大学/長崎県長崎市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Si基板上280nm帯InAlGaN深紫外LED2010
- Author(s)
  藤川紗千恵, 平山秀樹
- Organizer
  2010秋応用物理学会(第71回)
- Place of Presentation
  長崎大学/長崎県長崎市.
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Advances of AlGaN-based High-Efficiency deep-UV LEDs2010
- Author(s)
  H.hirayama
- Organizer
  Asia Communications and Photonics(ACP2010)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 多重量子障壁電子ブロック層を用いた250nm帯深紫外LEDの高効率化2010
- Author(s)
  平山秀樹, 塚田悠介, 前田哲利, 鎌田憲彦
- Organizer
  第57回2010春応用物理学会
- Place of Presentation
  東海大学/神奈川県厚木市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] GaN系THz-QCLからの電流注入による自然放出光の観測2010
- Author(s)
  寺嶋亘、平山秀樹
- Organizer
  ワイドギャップ半導体光・電子デバイス第162委員会第69回研究会(招待講演)
- Place of Presentation
  キャンパスイノベーションセンター東京
- Year and Date
  2010-05-07
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] RF-MBE growth of terahertz quantum cascade laser structure on GaN Substrate using droplets elimination by thermal annealing techique2010
- Author(s)
  W.Terashima, S.Matsumoto, H.Hirayama
- Organizer
  The 3^<rd> International Symposium on Growth of III-Nitrides (ISGN-3)
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Design of Multiquantum-barrier Electron-Blocking Layer for 230-280 nm-band AlGaN Deep-UV LEDs2010
- Author(s)
  Y.Tsukada, H.Hirayama, N.Kamata
- Organizer
  The 8^<th> International Symposium on Semiconduc tors Light Emitting Devices (ISSLED2010),I5
- Place of Presentation
  Beijing China
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] 低貫通転位密度ALNの結晶成長法開拓と220-280nm帯深紫外LEDの進展2010
- Author(s)
  塚田悠介, 平山秀樹, 秋葉雅弘, 鎌田憲彦
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の新展開第3回シンポジウム
- Place of Presentation
  日本科学未来館/東京都江東区
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 多重量子障壁(MQB)を用いた短波長深紫外LEDの飛躍的高出力化2010
- Author(s)
  塚田悠介, 平山秀樹, 秋葉雅弘, 鎌田憲彦
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域光・光量子科学技術の新展開第3回シンポジウム
- Place of Presentation
  日本科学未来館/東京都江東区
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Marked Efficiency Enhancement of AlGaN-based Deep-UV LEDs using Multiquantum-Barrier2010
- Author(s)
  Y. Tsukada, H. Hirayama, N. Kamata
- Organizer
  22th Int. Semiconductor Laser Conf.(ISLC2010)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] 多重量子障壁(MQB)を用いた高出力AlGaN系深紫外LED2010
- Author(s)
  塚田悠介, 平山秀樹, 秋葉雅弘、前田哲利, 鎌田憲彦
- Organizer
  2010秋応用物理学会(第71回)
- Place of Presentation
  長崎大学/長崎県長崎市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] GaN系THz-QCLからの電流注入による自然放出光の観測2010
- Author(s)
  寺嶋亘、平山秀樹
- Organizer
  ワイドギャップ半導体光・電子デバイス第162委員会第69回研究会
- Place of Presentation
  キャンパスイノベーションセンター東京
- Year and Date
  2010-05-07
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Recent progress of AlGaN based deep-UV LEDs2010
- Author(s)
  H.Hirayama
- Organizer
  7^<th> China International Exhibition and Forum on Solid State Lighting(CHINASSL2010)
- Place of Presentation
  Shinzhen, China
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Optimization of Multiquantum-barrier (MQB) Structure of AlGaN Deep-UV LEDs for Realizing High Injection Efficiency2010
- Author(s)
  Y.Tsukada, H.Hirayama, N.Kamata
- Organizer
  International Workshop on Nitride Semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Design of Multiquantum-barrier Electron-Blocking Layer for 230-280 nm-band AlGaN Deep-UV LEDs2010
- Author(s)
  Y. Tsukada, H. Hirayama, N. Kamata
- Organizer
  The 8th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing China
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Recent progress of AlGaN based deep-UV LEDs2010
- Author(s)
  H.Hirayama
- Organizer
  LG Innotek Forum
- Place of Presentation
  LG Innotek Co., Ltd., Seoul Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Marked efficiency enhancement of AlGaN-based deep-UV LEDs using Multiquantum-barrier2010
- Author(s)
  Y.Tsukada, H.Hirayama, N.Kamata
- Organizer
  22th International Semiconductor Laser Conference(ISLC2010)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 220-280nm AlGaN系紫外LEDの進展2010
- Author(s)
  平山秀樹
- Organizer
  第71回応用物理学会学術講演会シンポジウム「ワイドギャップ窒化物AlGaNの結晶評価と深紫外光デバイス応用」結晶工学分科会企画
- Place of Presentation
  長崎大学/長崎県長崎市
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] AlGaN系紫外LEDの進展と展望2010
- Author(s)
  平山秀樹
- Organizer
  サムコ株式会社セミナー
- Place of Presentation
  サムコ株式会社/京都府伏見区
- Year and Date
  2010-10-05
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] High-power short-wavelength AlGaN deep-UV LEDs realized by improving injection efficiency2010
- Author(s)
  H.Hirayama, Y.Tsukada, M.Akiba, N.Maeda, N.Kamata
- Organizer
  International Workshop on Nitride Semiconductors(IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 280nm-band InAlGaN deep-UV LED on Silicon(111) substrate2010
- Author(s)
  S.Fujikawa, H.Hirayama
- Organizer
  The 3^<rd> International Symposium on Growth of III-Nitrides(ISGN-3)
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] InAlGaN窒化物4元混晶を用いた紫外高効率発光デバイスの研究-220nm帯LEDの放射特性とMQBを用いた紫外LED高効率化-2010
- Author(s)
  平山秀樹
- Organizer
  文部科学省科学研究費補助金特定領域研究「窒化物半導体のフロンティア」-材料潜在能力の極限発現-、H21年度報告会
- Place of Presentation
  滋賀県
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] InAlGaN深紫外発光ダイオードと将来展開2010
- Author(s)
  平山秀樹
- Organizer
  JST戦略的イノベーション創出推進シンポジウム「無機発光素子を用いた高機能照明・次世代レーザ技術の開発」
- Place of Presentation
  JST東京本部/東京都千代田区
- Year and Date
  2010-04-26
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Recent progress of AlGaN based deep-UV LEDs2010
- Author(s)
  H.Hirayama
- Organizer
  Seoul Optodevice Forum
- Place of Presentation
  Seoul Semicondutor/Optodevice Co, Ltd, Seoul, Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Progress of AIGaN-based Deep-UV LEDs using High-Quality AIN on Sapphire2010
- Author(s)
  H.Hirayama, Y.Tsukada, N.Kamata
- Organizer
  22th International Semiconductor Laser Conference (ISLC2010)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] Marked Efficiency Enhancement of AlGaN-based Deep-UV LEDs using Multiquantum-Barrier2010
- Author(s)
  Y.Tsukada, H.Hirayama, N.Kamata
- Organizer
  22th International Semiconductor Laser Conference (ISLC2010)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] GaN/AlGaN THz-QCLからの電流注入による自然放出光の観察2010
- Author(s)
  寺嶋亘、平山秀樹
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] AlGaN系材料界面制御技術と深紫外LEDの進展2010
- Author(s)
  平山秀樹
- Organizer
  アモルファス・ナノ材料日本学術振興会第147委員会(第108回研究会)
- Place of Presentation
  主婦会館/東京都新宿区
- Year and Date
  2010-07-09
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] First observation of spontaneous emission on injection current from GaN/AlGaN Terahertz quantum cascade laser2010
- Author(s)
  W.Terashima, H.Hirayama
- Organizer
  International Workshop on Nitride Semiconductors(IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Optimization of Multiquantum-barrier(MQB) structure of AlGaN deep-UV LEDs for realizing high injection efficiency2010
- Author(s)
  Y.Tsukada, H.Hirayama, N.Kamata
- Organizer
  International Workshop on Nitride Semiconductors(IWN2010)
- Place of Presentation
  Tampa, Florida, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] AlGaN深紫外LEDの電子注入効率改善のためのMQB設計2010
- Author(s)
  塚田悠介, 平山秀樹, 鎌田憲彦
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学/三重県津市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] HVPE growth of crack-free thick AlN film in trench-patterned AlN template2010
- Author(s)
  K.Fujita, K.Okuura, H.Miyake, J.Norimatsu, H.Hirayama
- Organizer
  The 8^<th> International Symposium on Semiconductors Light Emitting Devices(ISSLED2010)
- Place of Presentation
  J4, Beijing China
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] High efficiency 280nm InAlGaN quantum well LEDs fabricated using quite low growth rate epitaxy2009
- Author(s)
  藤川紗千恵, 平山秀樹, 高野隆好, 椿健治
- Organizer
  8^<th> International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] GaN/AlGaN系THz帯量子カスケードレーザの作製と電流注入2009
- Author(s)
  寺島亘, 應磊瑩, 平山秀樹
- Organizer
  第70回2009秋応用物理学会
- Place of Presentation
  富山大学/富山県
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 250nm-band high-efficiency. AlGaN LEDs using In-doped quantum well and p-type layers2009
- Author(s)
  塚田悠介, 平山秀樹, 野口憲路, 鎌田憲彦
- Organizer
  8^<th> International Conference on Nitride Semicond uctors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 220-250nm帯AlGaN量子井戸紫外LEDからの垂直放射の確認2009
- Author(s)
  塚田悠介, 平山秀樹, 野口憲路, 乗松潤, 鎌田憲彦
- Organizer
  第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
- Place of Presentation
  東京農工大学/東京都府中市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 280nm帯紫外LEDにおけるInAlGaNの極低速成長の重要性2009
- Author(s)
  藤川紗千恵, 平山秀樹, 高野隆好, 椿健治
- Organizer
  第70回2009秋応用物理学会
- Place of Presentation
  富山大学/富山県
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Progresses of 220-280nm-band deep-UV-LEDs2009
- Author(s)
  平山秀樹
- Organizer
  Taiwan Display & Solid State Lighting Conference & Exhibition(TSSL2009)
- Place of Presentation
  Taiwan
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Agを用いた両面金属導波路を有するTHz量子カスケードレーザの作製2009
- Author(s)
  應磊瑩、堀内典明、寺嶋亘、平山秀樹
- Organizer
  エクストリームフォトニクスシンポジウム
- Place of Presentation
  和光本所
- Year and Date
  2009-05-20
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Siドーピングによる250nm帯InドープAlGaN量子井戸LED高効率化の検討2009
- Author(s)
  塚田悠介, 藤川紗千恵, 平山秀樹, 乗松潤, 鎌田憲彦
- Organizer
  第70回2009秋応用物理学会
- Place of Presentation
  富山大学/富山県
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Agを用いた両面金属導波路を有するTHz量子カスケードレーザの作製2009
- Author(s)
  應磊瑩、堀内典明、寺嶋亘、平山秀樹
- Organizer
  エクストリームフォトニクスシンポジウム
- Place of Presentation
  理化学研究所(和光本所)
- Year and Date
  2009-05-20
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Surface emitting property of 220-250nm-band AlGaN-based deep-UV LEDs2009
- Author(s)
  平山秀樹, 塚田悠介, 野口憲路, 乗松潤, 鎌田憲彦
- Organizer
  8^<th> International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 240nm AlGaN-LEDのCW1.2mW出力動作2009
- Author(s)
  乗松潤、平山秀樹、塚田悠介、鎌田憲彦
- Organizer
  第70回応用物理学会学術講演会、11p-X-3
- Place of Presentation
  富山大学
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] 大周期ストライプを用いた深紫外LED用ELO-AlNテンプレートの貫通転位の低減2009
- Author(s)
  藤川紗千恵, 乗松潤, 平山秀樹, 鎌田憲彦
- Organizer
  第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
- Place of Presentation
  東京農工大学/東京都府中市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 220-280nm帯深紫外LEDの最新動向2009
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  国際ナノテクノロジー総合展・技術会議
- Place of Presentation
  東京ビッグサイト
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 周期溝構造AIN/サファイア上への減圧HVPE法によるAlN成長2009
- Author(s)
  藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
- Organizer
  第70回2009秋応用物理学会
- Place of Presentation
  富山大学/富山県
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Progresses of 220-280nm-band AlGaN and InAlGaN based deep-UV-LEDs2009
- Author(s)
  平山秀樹
- Organizer
  Asian Pacific Workshop on Nitride Semiconductors(APWS2009)
- Place of Presentation
  China
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] GaN/AlGaN系THz帯量子カスケードレーザ構造の作成と評価2009
- Author(s)
  寺嶋亘、應磊瑩、平山秀樹
- Organizer
  H21年度共同プロジェクト研究会「量子カスケードレーザの高性能化と応用に関する研究」(招待講演)
- Place of Presentation
  東北大学
- Year and Date
  2009-11-04
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] 低貫通転位密度AlNバッファーの開拓と220-280nm帯AlNの実現と紫外LEDへの応用2009
- Author(s)
  平山秀樹, 乗松潤, 塚田悠介, 鎌田憲彦
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域、第二回公開シンポジウム「光・光量子科学技術の新展開」
- Place of Presentation
  日本科学未来館/東京都江東区
- Year and Date
  2009-11-27
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] InAlGaN4元混晶半導体を用いた深紫外発光量子ドットの作製2009
- Author(s)
  高野隆好, 藤川紗千恵, 平山秀樹, 杉山正和
- Organizer
  第56回2009春応用物理学会
- Place of Presentation
  筑波大学/茨城県つくば市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 紫外LED用ELO-AlNテンプレートの作製(横成長領域の拡大)2009
- Author(s)
  平山秀樹, 乗松潤, 野口憲路, 鎌田憲彦
- Organizer
  第56回2009春応用物理学会
- Place of Presentation
  筑波大学/茨城県つくば市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Fabrication of device structure for GaN/AlGaN terahertz quantum cascade laser2009
- Author(s)
  W. Terashima, L. Ying and H. Hirayama
- Organizer
  8^<th> International Conference on Nitride Semiconductors
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] 減圧HVPE法による周期溝加工AlNテンプレート上へのAlN厚膜成長2009
- Author(s)
  奥浦一輝, 片桐佑介, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
- Organizer
  第56回2009春応用物理学会
- Place of Presentation
  筑波大学/茨城県つくば市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 230nm帯AlGaN量子井戸紫外LEDの放射特性2009
- Author(s)
  野口憲路, 平山秀樹, 乗松潤, 鎌田憲彦
- Organizer
  第56回2009春応用物理学会
- Place of Presentation
  筑波大学/茨城県つくば市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 最短波長領域・高効率深紫外LEDの開発2009
- Author(s)
  平山秀樹
- Organizer
  (社)日本オプトメカトロニクス協会、光センシング技術部会研究会
- Place of Presentation
  機械振興会館/東京都港区
- Year and Date
  2009-09-07
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] In混入AlGaN の発光及びp型特性と高効率深紫外LEDへの応用2009
- Author(s)
  平山秀樹
- Organizer
  第70回応用物理学会学術講演会、「紫外発光素子の進展」、特定領域研究企画「窒化物半導体のフロンティア」-材料潜在能力の極限発現-
- Place of Presentation
  富山大学/富山県
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] GaN/AlGaN系THz帯量子カスケードレーザ構造の作成と評価2009
- Author(s)
  寺嶋亘、應磊瑩、平山秀樹
- Organizer
  H21年度共同プロジェクト研究会「量子カスケードレーザの高性能化と応用に関する研究」
- Place of Presentation
  東北大学
- Year and Date
  2009-11-04
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] Siドーピングによる250nm帯InドープAlGaN量子井戸LED高効率化の検討2009
- Author(s)
  塚田悠介、藤川紗千恵、平山秀樹、乗松潤、鎌田憲彦
- Organizer
  第70回応用物理学会学術講演会、11p-X-2
- Place of Presentation
  富山大学
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] 高Al組成InAlGaN4元混晶を用いた深紫外発光量子ドットの結晶成長と発光特性2009
- Author(s)
  高野隆好, 平山秀樹, 杉山正和
- Organizer
  第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
- Place of Presentation
  東京農工大学/東京都府中市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN template2009
- Author(s)
  (Invited) H. Hirayama, et al,
- Organizer
  Semiconductor Lasers and LEDs, Gallium Nitride Materials and Devices IV
- Place of Presentation
  San Jose, USA.
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] ELO法を用いた低貫通転位密度AlNの実現と深紫外UEDへの応用2009
- Author(s)
  平山秀樹, 乗松潤, 藤川紗千恵, 塚田悠介, 鎌田憲彦
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域、第二回公開シンポジウム「光・光量子科学技術の新展開」
- Place of Presentation
  日本科学未来館/東京都江東区
- Year and Date
  2009-11-27
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Recent progresses of AlGaN and InAlGaN based deep-UV-LEDs2009
- Author(s)
  (Invited) H. Hirayama
- Organizer
  Display & Solid State Lighting Conference & Exhibition (DSSL2009)
- Place of Presentation
  Seoul, Korea.
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Ag-metal bonding conditions for low-loss double-metal waveguide for terahertz quantum cascade laser2009
- Author(s)
  L. Ying, N. Ikeda and H. Hirayama
- Organizer
  The 34^<th> International Conference on Infrared, Millimeter, and Terahertz Waves 2009
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-09-24
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] InAlGaN4元混晶を用いた280nm殺菌用途波長高効率LEDの実現2009
- Author(s)
  藤川紗千恵, 平山秀樹, 高野隆好, 椿健治
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域、第二回公開シンポジウム「光・光量子科学技術の新展開」
- Place of Presentation
  日本科学未来館/東京都江東区
- Year and Date
  2009-11-27
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Deep-UV bright emission from high-Al-content InAlGaN quantum dots-growth and optical properties2009
- Author(s)
  高野隆好, 平山秀樹, 杉山正和
- Organizer
  8^<th> International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 窒化物紫外LEDの進展と今後の展望2009
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  光技術動向調査委員会研究会
- Place of Presentation
  幕張
- Year and Date
  2009-01-09
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 240nmAlGaN-LEDのCW1.2mW出力動作2009
- Author(s)
  乗松潤, 平山秀樹, 塚田悠介, 鎌田憲彦
- Organizer
  第70回2009秋応用物理学会
- Place of Presentation
  富山大学/富山県
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 高Al組成InAlGaN4元混晶の結晶成長と250nm帯深紫外高効率LEDの実現2009
- Author(s)
  塚田悠介, 平山秀樹, 野口憲路, 鎌田憲彦
- Organizer
  第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
- Place of Presentation
  東京農工大学/東京都府中市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Low threading dislocation density 4-inch area uniform AlN on sapphire fabricated by controlling AlN unclei2009
- Author(s)
  高野隆好, 平山秀樹, 藤川紗千恵, 椿健治
- Organizer
  8^<th> International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「アンモニアパルス供給多段成長法」の最適化による2インチ3枚対応高品質AlNテンプレートの作製と紫外LEDの作製2009
- Author(s)
  高野隆好, 平山秀樹, 藤川紗千恵, 椿健治
- Organizer
  第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
- Place of Presentation
  東京農工大学/東京都府中市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 2"×3MOCVDを用いた核形成層制御によるサファイア基板上AlNの高品質化2009
- Author(s)
  高野隆好, 藤川紗千恵, 平山秀樹, 椿健治
- Organizer
  第70回2009秋応用物理学会
- Place of Presentation
  富山大学/富山県
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] AlGaN系半導体を用いた深紫外LEDの進展2009
- Author(s)
  平山秀樹
- Organizer
  エクストリームフォトニクスシンポジウム
- Place of Presentation
  理化学研究所/埼玉県和光市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 窒化物半導体を用いたTHzカスケードレーザの構造設計と素子作製2009
- Author(s)
  寺嶋亘、應磊瑩、平山秀樹
- Organizer
  エクストリームフォトニクスシンポジウム
- Place of Presentation
  理化学研究所(和光本所)
- Year and Date
  2009-05-20
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] 窒化物半導体を用いたTHzカスケードレーザの構造設計と素子作製2009
- Author(s)
  寺嶋亘、應磊瑩、平山秀樹
- Organizer
  エクストリームフォトニクスシンポジウム
- Place of Presentation
  和光本所
- Year and Date
  2009-05-20
- Data Source
  KAKENHI-PROJECT-21246005
[Presentation] 250nm帯InAlGaN量子井戸紫外LEDのサブミリワット出力動作2009
- Author(s)
  塚田悠介, 平山秀樹, 藤川紗千恵, 野口憲路, 鎌田憲彦
- Organizer
  第56回2009春応用物理学会
- Place of Presentation
  筑波大学/茨城県つくば市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 低速成長による高Al組成InAlGaN4元混晶の高品質結晶成長・評価と280nm帯深紫外高出力LEDの実現2009
- Author(s)
  藤川紗千恵, 平山秀樹, 高野隆好, 椿健治
- Organizer
  第一回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の将来を展望する」
- Place of Presentation
  東京農工大学/東京都府中市
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 230-350nm帯InAlGaN系深紫外高効率発光デバイスの研究2009
- Author(s)
  平山秀樹
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域、 H21年度報告会
- Place of Presentation
  東京
- Year and Date
  2009-04-28
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Recent progresses of AlGaN and InAlGaN based deep-UV-LEDs2009
- Author(s)
  平山秀樹
- Organizer
  Conference on Lasers and Electro-Optics(CLEO)2009
- Place of Presentation
  Baltimore, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Low threading dislocation density ELO-AlN for deep-UV LEDs fabricated using large period(>20μm)AlN stripes2009
- Author(s)
  平山秀樹, 乗松潤, 藤川紗千恵, 鎌田憲彦
- Organizer
  8^<th> International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Low threading dislocation density AlN on sapphire for DUV-LEDs realized by using multi-AlN-nucleus layers growth by NH3 pulsed-flow epitaxy2009
- Author(s)
  高野隆好, 平山秀樹, 藤川紗千恵, 椿健治
- Organizer
  8^<th> International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 280nm-band quaternary InAlGaN quantum well deep-UV LEDs with p-InAlGaN layers2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  International Symposium on Semiconductor Light emitting devices (ISSLED2008)
- Place of Presentation
  Phoenix, USA.
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 230-350nm紫外LEDの進展と今後の展望2008
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  伯東セミナー
- Place of Presentation
  新宿伯東講堂
- Year and Date
  2008-07-02
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 220-280nm帯AlGaN、InAlGaN系紫外LEDの進展2008
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  フイドギャップ半導体光・電子デバイス、日本学術振興会第162委員会
- Place of Presentation
  伊東
- Year and Date
  2008-12-15
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Growth of high-Al-content AlGaN QWs used for 220-250nm-band high-brightness UV-LEDs2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Extremely high efficiency PL emission from 280nm-band InAlGaN QWs realized by Si-doped layer control2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 222nm single-peaked operation of deep-UV AlGaN MQW LED2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  27^<th> Electronic Materials Symposium (EMS-27)
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 222-282nm AlGaN and InAlGaN based high-efficiency deep-UV-LEDs fabricated on high-quality AlN2008
- Author(s)
  (Invited) H. Hirayama, et al,
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Milliwatt power 270nm-band AlGaN deep-UV LED fabricated on ELO-AlN template2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Extremely high efficiency 280 nm-band emission from quaternary InAlGaN quantum wells realized by controlling Si-doped layers2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 220-280nm窒化物深紫外LEDの進展と今後の展望2008
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  電気学会パワー半導体レーザ応用システム調査専門委員会
- Place of Presentation
  市ヶ谷
- Year and Date
  2008-05-22
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「アンモニアパルス供給多層成長法を用いた深紫外LED用AINバッファーの進展」2008
- Author(s)
  平山秀樹、谷田部透、野口憲路、乗松潤、鎌田憲彦
- Organizer
  2008春応用物理学会(第65回)
- Place of Presentation
  日本大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] ELO-AlNテンプレート上に作製した270nm帯AlGaN-LEDのCWミリワット出力動作2008
- Author(s)
  平山秀樹, 他6名
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「248nmAIGaN深紫外LEDの室温CWミリワット出力動作」2008
- Author(s)
  谷田部透、平山秀樹、野口憲路、乗松潤、鎌田憲彦
- Organizer
  2008春応用物理学会(第65回)
- Place of Presentation
  日本大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 222-273nm AlGaN deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffer on sapphire2008
- Author(s)
  (Invited) H. Hirayama, et al,
- Organizer
  International Symposium on Semiconductor Light emitting devices (ISSLED2008)
- Place of Presentation
  Phoenix, USA.
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「窒化物半導体による深紫外およびテラヘルツ発光素子開発の現状と展望」2008
- Author(s)
  平山秀樹
- Organizer
  ワイドギャップ半導体光・電子デバイス、日本学術振興会第162委員会、特別講演会(第56回研究会)
- Place of Presentation
  主婦会館プラザエフ
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] High-quality AlN buffer fabricated by NH_3 pulse-flow multilayer growth method used for 220-270 nm-band UV-LEDs2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  Second International Symposium on Growth of III-Nitrides (ISGN-2)
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 230nm帯AlGaN紫外LEDの高出力化2008
- Author(s)
  平山秀樹, 他3名
- Organizer
  電子情報通信学会、レーザ・量子エレクトロニクス研究会
- Place of Presentation
  名古屋工業大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] High-efficiency 280nm-band InAlGaN quantum well deep-UV LEDs with Si-doped barrier layers2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  27^<th> Electronic Materials Symposium (EMS-27)
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Fabrication of low threading dislocation density ELO-AlN template for the application to deep-UV LEDs2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] AlN電子ブロック層を用いた230nm帯AlGaN-LEDのCW動作2008
- Author(s)
  平山秀樹, 他3名
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "222-273 nm AIGaN deep ultraviolet light-emitting diodes fabricated on high-quality AIN buffer on sapphire"2008
- Author(s)
  H. Hirayama, T. Yatabe, N. Noguchi and N. Kamata
- Organizer
  International Symposium on Semiconductor Light emitting devices(ISSLED2008)
- Place of Presentation
  Phoenix, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 264nm紫外AlGaN量子井戸LEDのCW11W出力動作2008
- Author(s)
  平山秀樹, 他3名
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 窒化物半導体紫外発光デバイスの進展とMEMSへの融合の可能性2008
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  第25回「センサー・マイクロマシンと応用システム」シンポジウム
- Place of Presentation
  東京
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 窒化物を用いた殺菌用途高出力紫外LEDの開発と今後の展望2008
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  電子ジャーアナル講演会
- Place of Presentation
  東京
- Year and Date
  2008-11-19
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] ELO-AlNテンプレート上に作製した270nm帯紫外LED2008
- Author(s)
  平山秀樹, 他5名
- Organizer
  電子情報通信学会、レーザ・量子エレクトロニクス研究会
- Place of Presentation
  名古屋工業大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 222nm single-peaked deep-UV LED with thin AlGaN quantum well layers2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「量産対応型MOCVDによる270nm帯高出力深紫外LEDの検討」2008
- Author(s)
  高野隆好、藤川紗千恵、椿健治、平山秀樹
- Organizer
  2008春応用物理学会(第65回)
- Place of Presentation
  日本大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Realization of 270nm-band AlGaN based UV-LEDs on large area AlN template with high crystalline quality2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWN2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] SiモジュレーションドープInAlGaN発光層を用いた280nm帯紫外LEDの10mW出力動作2008
- Author(s)
  平山秀樹, 他3名
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「InAIGaN4元混晶を用いた280nm帯深紫外LED」2008
- Author(s)
  藤川紗千恵、平山秀樹、高野隆好、椿健治
- Organizer
  2008春応用物理学会(第65回)
- Place of Presentation
  日本大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 280nm帯InAlGaN高出力LED2008
- Author(s)
  平山秀樹, 他3名
- Organizer
  電子情報通信学会、レーザ・量子エレクトロニクス研究会
- Place of Presentation
  名古屋工業大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「窒化物半導体による深紫外およびテラヘルツ発光素子開発の現状と展望」2008
- Author(s)
  平山秀樹
- Organizer
  ワイドギャップ半導体光・電子デバイス、日本学術振興会第162委員会、特別講演会(第56回研究会)
- Place of Presentation
  主婦会館プラザエフ
- Year and Date
  2008-01-25
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 270nm-band AlGaN deep-UV-LEDs fabricated on ELO-AlN buffer2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  27^<th> Electronic Materials Symposium (EMS-27)
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「222nmAIGaN深紫外LEDのシングルピーク発光動作」2008
- Author(s)
  野口憲路、平山秀樹、谷田部透、鎌田憲彦
- Organizer
  2008春応用物理学会(第65回)
- Place of Presentation
  日本大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Investigation of quantum cascade lasers based on III-nitride semiconductors in the terahertz frequency range2008
- Author(s)
  Terashima W., Hirayama H.
- Organizer
  33^<rd> International Conference on Infrared and Millimeter Waves, 16^<th> International Conference on Terahertz Electronics (IRMMW-THz 2008)
- Place of Presentation
  Pasadena California
- Data Source
  KAKENHI-PROJECT-19206004
[Presentation] Design and fabrication of terahertz quantum cascade laser structure based on III-nitride semiconductors2008
- Author(s)
  W. Terashima, H. Hirayama
- Organizer
  International Workshop on Nitride Semiconductors 2008 (IWM2008)
- Place of Presentation
  Montreux, Switzerland
- Data Source
  KAKENHI-PROJECT-19206004
[Presentation] 窒化物紫外LEDの進展と実用化へ向けた課題2008
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  技術情報協会セミナー
- Place of Presentation
  東京テレコムセンター
- Year and Date
  2008-09-26
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 220-350nm窒化物半導体紫外発光素子の進展と今後の展望2008
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  日本学術振興会、光エレクトロニクス第130委員会
- Place of Presentation
  森戸記念館
- Year and Date
  2008-05-12
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Over 1mW output power 247-254nm AlGaN deep-UV-LEDs realized by reducing threading dislocation density of AlN buffer2008
- Author(s)
  H. Hirayama, et al,
- Organizer
  27^<th> Electronic Materials Symposium (EMS-27)
- Place of Presentation
  Izu
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 220-280nm帯AlGaN、InAlGaN系紫外LEDの進展2008
- Author(s)
  平山秀樹
- Organizer
  文部科学省特定領域研究公開シンポジウム
- Place of Presentation
  東京
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 紫外LED用低貫通転位密度ELO-AlNテンプレートの作製2008
- Author(s)
  平山秀樹, 他5名
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 220-280nm帯深紫外LEDの最新動向2008
- Author(s)
  (招待講演) 平山秀樹
- Organizer
  全日本科学機器展
- Place of Presentation
  東京ビッグサイト
- Year and Date
  2008-11-27
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "280 nm-band quaternary InAIGaN quantum well deep-UV LEDs with p-lnAIGaN layers"2008
- Author(s)
  S. Fujikawa, T, Takano, K. Tsubaki and H. Hirayama
- Organizer
  International Symposium on Semiconductor Light emitting devices(ISSLED2008)
- Place of Presentation
  Phoenix, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Realization of 340 nm-band high-power InAlGaN-based UV-LED by the suppression of electron overflow"2007
- Author(s)
  S. Fujikawa, T. Takano, Y. Kondo ahd H. Hirayama
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "340 nm-band high-power (>7mW) InAlGaN quantum well UV-LED using p-type InAlGaN layers"2007
- Author(s)
  S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Development of Deep-UV and Terahertz Semiconductor Emitting Devices and their Applications"2007
- Author(s)
  H. Hirayama
- Organizer
  The 13Th International Micromachine/Nanotech Symposium, -MEMS Frontier: Innovative Devices by Micro and Nano-Bio Fusion Create New Lifestyles-,
- Place of Presentation
  Tokyo
- Year and Date
  2007-07-26
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] 表面プラズモン導波路を用いたテラヘルツ半導体レーザ2007
- Author(s)
  平山秀樹, 他
- Organizer
  応用物理学会・応用電子物性分科会研究会
- Place of Presentation
  東京
- Year and Date
  2007-10-25
- Data Source
  KAKENHI-PROJECT-19206004
[Presentation] 「深紫外発光InAIGaN4元混晶量子ドットの形成と電流注入発光」2007
- Author(s)
  藤川紗千恵、平山秀樹
- Organizer
  2007秋応用物理学会(第68回)
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Control of polarity and reduction of threading dislocation density (TDD) of AIN/AIGaN template by using TMAl pulse supply growth"2007
- Author(s)
  N. Noguchi, T. Ohashi N. Kamata and H. Hirayama
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「p-InAIGaNと高品質AINを用いた340nm帯高出力LED」2007
- Author(s)
  藤川紗千恵、高野隆好、近藤行廣、平山秀樹
- Organizer
  電子情報通信学会、レーザ・量子エレクトロニクス研究会(LQE)「窒化物半導体光・電子デバイス・材料、及び関連技術」
- Place of Presentation
  福井大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "245-250 nm AlGaN-based deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffer on sapphire"2007
- Author(s)
  H. Hirayama, T. Ohashi, T. Yatabe and N. Kamata
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「261nmAIGaN量子井戸深紫外LEDのCWミリワット動作」2007
- Author(s)
  谷田部透、野口憲路、鎌田憲彦、平山秀樹
- Organizer
  2007秋応用物理学会(第68回)
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「p-InAIGaNと高品質AINを用いた340nm帯紫外高出力LED」2007
- Author(s)
  藤川紗千恵、高野隆好、椿健治、平山秀樹
- Organizer
  応用物理学会・結晶工学分科会研究会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Remarkable enhancement of 254-280 nm deep UV emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire"2007
- Author(s)
  T. Yatabe, H. Hirayama, T. Ohashi and N. Kamata
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「230-350nm帯InAlGaN系深紫外高効率発光デバイスの研究」2007
- Author(s)
  平山秀樹
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」領域、平成19年度新規採択課題キックオフミーデイング
- Place of Presentation
  日本科学未来館
- Year and Date
  2007-10-27
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "227-261 nm AIGaN-based ultraviolet light-emitting diodes fabricated on high-quality AIN buffer on sapphire"2007
- Author(s)
  H. Hirayama, T. Yatabe, N. Noguchi and N. Kamata
- Organizer
  International Conference on White LEDs and Solid State Lighting (White LEDs-07)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Quaternary InA1GaN quantum-dot UV-LED emitting at 335 nm fabricated by an anti-surfactant method"2007
- Author(s)
  H. Hirayama,
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] "High-quality AlN buffer fabricated on sapphire by NH3 pulse-flow multi-layer growth method for application to deep UV LEDs"2007
- Author(s)
  H. Hirayama, T. Ohashi and N. Kamata
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「深紫外半導体発光素子およびTHz量子カスケードレーザの開発」2007
- Author(s)
  平山秀樹
- Organizer
  電気学会、光・量子デバイス研究会
- Place of Presentation
  九州大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "High-quality AIN buffer fabricated on sapphire by ammonia pulse-flow multi-layer growth method for application to deep UV LEDs"2007
- Author(s)
  H. Hirayama, T. Ohashi and N. Kamata
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Remarkable enhancement of 254-288 nm deep UV emission from AIGaN quantum wells by using high-quality AlN buffer on sapphire"2007
- Author(s)
  T. Yatabe, N. Noguchi and N. Kamata, and H. Hirayama
- Organizer
  International Conference on White LEDs and Solid State Lighting (White LEDs-07)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "245-250nm AIGaN-based deep ultraviolet light-emitting diodes fabricated on high-quality AIN buffer on sapphire"2007
- Author(s)
  H. Hirayama, T. Ohashi, T. Yatabe and N. Kamata
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "High-quality AIN buffer fabricated on sapphire by NH3 pulsed-flow multi-layer growth method for application to deep-UV LEDs"2007
- Author(s)
  N. Noguchi, T. Yatabe, T. Ohashi, N. Kamata and H. hirayama
- Organizer
  International Conference on White LEDs and Solid State lighting (White LEDs-07)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Realization of 340 nm band high-power UV-LED using p-type InAlGaN"2007
- Author(s)
  S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
- Organizer
  International Conference on White LEDs and Solid State Lighting (White LEDs-07)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「深紫外半導体発光素子およびTHz量子カスケードレーザの開発」2007
- Author(s)
  平山秀樹
- Organizer
  電気学会、光・量子デバイス研究会
- Place of Presentation
  九州大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PROJECT-15GS0207
[Presentation] "230-350nm窒化物深紫外LEDの進展と今後の展望"2007
- Author(s)
  平山秀樹、谷田部透, 野口憲路, 藤川紗千恵, 高野隆好, 鎌田憲彦, 近藤行廣
- Organizer
  第68回応用物理学会学術講演回、「窒化物の新展開」特定領域研究企画「窒化物光半導体のフロンティア」-材料潜在能力の極限発現一
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Development of Deep-UV and Terahertz Semiconductor Emitting Devices and their Applications"2007
- Author(s)
  H. Hirayama
- Organizer
  The 13Th International Micromachine/Nanotech Symposium, -MEMS Frontier: Innovative Devices by Micro and Nano-Bio Fusion Create New Lifestyles-,
- Place of Presentation
  Tokyo
- Year and Date
  2007-07-26
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "231-261 nm AlGaN quantum well deep ultraviolet light-emitting diodes fabricated on high-quality AlN buffer on sapphire"2007
- Author(s)
  H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi and N. Kamata
- Organizer
  International Symposium on Compound Semiconductors (ISCS2007)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「InAlGaN窒化物4元混晶を用いた紫外LEDの高出力化」2007
- Author(s)
  平山秀樹
- Organizer
  文部省科研費、特定領域研究、「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」、平成18年度研究成果報告会
- Place of Presentation
  熱海後楽園ホテル(静岡)
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "340 nm band high-power (>7mW) InAlGaN quantum well UV-LED using p-type InAlGaN layers"2007
- Author(s)
  S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
- Organizer
  International Symposium on Compound Semiconductors (ISCS2007)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] Development of Deep-UV and terahertz semiconductor emitting devices and their applications (invited)2007
- Author(s)
  Hirayama H.
- Organizer
  13th International Micromachine/Nanotech Symposium
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-19206004
[Presentation] Development of Deep-UV and Terahertz Semiconductor Emitting devices and their Applications2007
- Author(s)
  H.Hirayama
- Organizer
  The 13^<th> International Micromachine/Nanotech Symposium, -MEMS Frontier-
- Place of Presentation
  Tokyo
- Year and Date
  2007-07-26
- Data Source
  KAKENHI-PROJECT-19206004
[Presentation] "Remarkable improvement of output power for InAlGaN based ultraviolet LED by improving the crystal quality of AlN/AlGaN templates"2007
- Author(s)
  T.Takano, S. Fujikawa, Y. Kondo and H. Hirayama
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Remarkable enhancement of 254-280 nm deep UV emission from AIGaN quantum wells by using high-quality AIN buffer on sapphire"2007
- Author(s)
  T. Yatabe, H. Hirayama, T. Ohashi and N. Kamata
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 「231nmAIGaN量子井戸深紫外LEDのシングルピーク発光動作」2007
- Author(s)
  野口憲路、谷田部透、鎌田憲彦、平山秀樹
- Organizer
  2007秋応用物理学会(第68回)
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Realization of 340 nm-band high-power (>7mW) InAlGaN quantum well UV-LED with p-type InAlGaN"2007
- Author(s)
  S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2007)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Realization of 340 nm-band high-power UV-LED using p-type InAlGaN"2007
- Author(s)
  S. Fujikawa, T. Takano, Y. Kondo and H. Hirayama
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  Laforet Biwako Shiga
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Control of polarity and reduction of threading dislocation density (TDD) of AlN/AlGaN buffer on sapphire by using TMAl pulsed supply method"2007
- Author(s)
  N. Noguchi, T. Ohashi N. Kamata and H. Hirayama
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] "Quaternary InAlGaN quantum-dot UV-LED emitting at 335 nmfabricated by an anti-surfactant method"2007
- Author(s)
  H. Hirayama, S. Fujikawa
- Organizer
  International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 深紫外半導体発光素子およびTHz量子カスケードレーザの開発2007
- Author(s)
  平山秀樹
- Organizer
  電気学会・光・量子デバイス研究会
- Place of Presentation
  九州大学
- Year and Date
  2007-12-14
- Data Source
  KAKENHI-PROJECT-19206004
[Presentation] "Remarkable improvement of output power for InAIGaN based UV LED by improving crystal quality of AIN/AIGaN template"2007
- Author(s)
  T. Takano, S. Fujikawa, Y. Kondo and H. Hirayama
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  Laforet Biwako, Shiga
- Data Source
  KAKENHI-PLANNED-18069014
[Presentation] 窒化物半導体による深紫外及びテラヘルツ発光素子開発の現状と展望2007
- Author(s)
  平山秀樹
- Organizer
  ワイドギャップ半導体光・電子デバイス、日本学術振興会第162委員会、特別講演会
- Place of Presentation
  四ツ谷
- Year and Date
  2007-01-25
- Data Source
  KAKENHI-PROJECT-19206004
[Presentation] Recent progress of AlGaN UVC LED by improving light-extraction efficiency
- Author(s)
  H. Hirayama
- Organizer
  Conference on LED and its Industrial Application (LEDIA’14)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-04-22 – 2014-04-24
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LEDの現状と展望
- Author(s)
  平山秀樹
- Organizer
  電子ジャーナルテクニカルセミナー
- Place of Presentation
  千代田、東京
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Development of 260 nm band deep-UV light-emitting diodes on Si substrates
- Author(s)
  T. Mino and H. Hirayama
- Organizer
  Gallium Nitride Materials and Devices VIII in OPTO SPIE Photonic West
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Recent progress and future prospects of AlGaN deep-UV LEDs
- Author(s)
  H. Hirayama
- Organizer
  The 3rd International Symposium on Next-Generation Electronics (ISNE2014)
- Place of Presentation
  Taoyuan, Taiwan
- Year and Date
  2014-05-07 – 2014-05-10
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Enhanced Strain Relaxation using Thin AlGaN Interlayers and its Effect to UVC Quantum Well Emission Properties
- Author(s)
  M. Jo and H. Hirayama
- Organizer
  International Workshop on Nitride semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] ウェットエッチングによるサファイア表面加工基板(PSS)を用いた深紫外LED用高品質AlNテンプレートの作製
- Author(s)
  金沢裕也、豊田史朗、大島一晟、鎌田憲彦、鹿島行雄、松浦恵里子、嶋谷聡、小久保光典、田代貴晴、大川貴史、上村隆一郎、長田大和、平山秀樹
- Organizer
  電子情報通信学会　レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪大学、大阪府吹田市
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Nonradiative Recombination Process in AlGaN Quantum Well and Its Excitation Density Dependence
- Author(s)
  M. Julkarnain, A. Z. M. Touhidul Islam, T. Fukuda, N. Kamata, and H. Hirayama
- Organizer
  Int. Symp. on the Science and Technology of Lighting, (LS14)
- Place of Presentation
  Como, Italy
- Year and Date
  2014-06-22 – 2014-06-27
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] AlGaN系深紫外LEDの進展と展望
- Author(s)
  平山秀樹
- Organizer
  レーザー学会、東京支部セミナー
- Place of Presentation
  横浜、神奈川
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 結合ピラーAlNバッファーを用いた高効率深紫外LEDの開拓
- Author(s)
  富田優志、藤川紗千恵、豊田史朗、鎌田憲彦、平山秀樹
- Organizer
  先端光科学領域シンポジウム2012
- Place of Presentation
  和光、埼玉
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 267 nm AlGaN UVC LED using p-AlGaN superlattice transparent hole-spreading contact layer
- Author(s)
  Y. Kanazawa, J. Yun, S. Toyoda, N. Maeda, N. Kamata and H. Hirayama
- Organizer
  International Symposium on the Science and Technology of Light (LS14)
- Place of Presentation
  Como, Italy
- Year and Date
  2014-06-22 – 2014-06-27
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Extraction of SRH and auger recombination coefficients by utilizing theoretical radiative recombination coefficient and rate equation in LEDs
- Author(s)
  J. Yun, H. Hirayama and J. Shim
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学、北海道札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Recent progress and future prospects of AlGaN-based deep-UV LEDs
- Author(s)
  H. Hirayama
- Organizer
  Light, Energy and the Environment Congress 2014
- Place of Presentation
  Canberra, Australia
- Year and Date
  2014-12-02 – 2014-12-05
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Optical Characterization of Non-Radiative Centers and Improvement in Light Extraction Efficiency of Deep UV-LEDs
- Author(s)
  N. Kamata, A. Z. M. Touhidul Islam, M. Akiba, K. Igarashi, N. Murakoshi, T. Fukuda, H. Hirayama
- Place of Presentation
  Jpn-China-Korea Conf.
- Data Source
  KAKENHI-PROJECT-21360003
[Presentation] MOCVD Growth and Characterization of THz Quantum Cascade Structure
- Author(s)
  S. Toyoda, W. Terashima, N. Kamata, H. Hirayama
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-27 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] Extraction of principle parameters of light-emitting diodes by utilizing rate equation and relative ηEQE vs current curve
- Author(s)
  J. Yun, H. Hirayama and J. Shim
- Organizer
  The 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-14 – 2014-12-19
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 新しい光りデバイスを目指して
- Author(s)
  平山秀樹
- Organizer
  東芝機械㈱セミナー
- Place of Presentation
  沼津、静岡
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 透明コンタクト層を用いた高効率・深紫外LEDの実現
- Author(s)
  前田哲利、定昌史、平山秀樹
- Organizer
  理研シンポジウム第2回「光量子工学研究」
- Place of Presentation
  AER、宮城県仙台市
- Year and Date
  2014-11-25 – 2014-11-26
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Nonradiative Centers in Deep-UV AlGaN-Based Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence
- Author(s)
  N. Kamata, A. Z. M. T. Islam, M. Julkarnain, N. Murakoshi, T. Fukuda and H. Hirayama
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] 267 nm AlGaN UVC LED using p-AlGaN superlattice transparent hole-spreading contact layer
- Author(s)
  Y. Kanazawa, J. Yun、S. Toyoda, N. Maeda, N. Kamata and H. Hirayama
- Organizer
  Int. Symp. on the Science and Technology of Lighting, (LS14)
- Place of Presentation
  Como, Italy
- Year and Date
  2014-06-22 – 2014-06-27
- Data Source
  KAKENHI-PROJECT-24360005
[Presentation] 高Al組成p-AlGaNコンタクト層を用いた深紫外発光ダイオード
- Author(s)
  定昌史、前田哲利、平山秀樹
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学、北海道札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 光取出し改善による高効率AlGaN深紫外の実現
- Author(s)
  藤川紗千恵、平山秀樹
- Organizer
  第3回先端フォトニクスシンポジウム
- Place of Presentation
  日本学術会議講堂
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外・テラヘルツ半導体発光デバイス
- Author(s)
  平山秀樹
- Organizer
  理化学研究所　チュートリアルサイエンス道場
- Place of Presentation
  和光、埼玉
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] InAlGaN4元混晶を用いた高効率深紫外発光デバイスの研究
- Author(s)
  平山秀樹
- Organizer
  CREST「新機能創成に向けた光・光量子科学技術」研究領域、光・光量子科学技術の進展開、第5回シンポジウム
- Place of Presentation
  千代田、東京
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] p-AlGaN透明コンタクト層を用いた高効率深紫外LEDの検討
- Author(s)
  前田哲利、藤川紗千恵、水澤克哉、平山秀樹
- Organizer
  先端光科学領域シンポジウム2012
- Place of Presentation
  和光、埼玉
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] フォトニックナノ構造を用いた深紫外LEDの高効率化
- Author(s)
  藤川紗千恵、平山秀樹
- Organizer
  先端光科学領域シンポジウム2012
- Place of Presentation
  和光、埼玉
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] ピラー構造バッファーを用いた高効率・深紫外LEDの検討
- Author(s)
  金澤裕也、豊田史朗、鎌田憲彦、平山秀樹
- Organizer
  理研シンポジウム第2回「光量子工学研究」
- Place of Presentation
  AER、宮城県仙台市
- Year and Date
  2014-11-25 – 2014-11-26
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LEDの進展と今後の展望
- Author(s)
  平山秀樹
- Organizer
  電気学会、光・量子デバイス研究会
- Place of Presentation
  大岡山、東京
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] High-quality AlN template for deep-UV LED grown on patterned sapphire substrate formed by using nano-imprinting and wet-chemical etching
- Author(s)
  Y. Kanazawa, S. Toyoda, N. Maeda, M. Jo, N. Kamata, Y. Kashima, E. Matsuura, S. Shimatani, M. Kokubo, T. Tashiro, T. Ohkawa, R. Kamimura, Y. Osada and H. Hirayama
- Organizer
  The 10th International Symposium on Semiconductors Light Emitting Devices (ISSLED2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-14 – 2014-12-19
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 深紫外LEDの開発と今後の展望
- Author(s)
  平山秀樹
- Organizer
  OPTICS & PHOTONICS International 2012
- Place of Presentation
  横浜、神奈川
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 高Al組成p型AlGaNコンタクト層を用いた260nm深紫外LED
- Author(s)
  定昌史、前田哲利、平山秀樹
- Organizer
  電子情報通信学会　レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪大学、大阪府吹田市
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] テラヘルツ量子カスケードレーザと深紫外LEDの進展と展望
- Author(s)
  平山秀樹
- Organizer
  古河電工㈱セミナー
- Place of Presentation
  横浜、神奈川
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 窒化物LED高効率化のためのナノインプリントとドライエッチングによる微細加工制御技術
- Author(s)
  鹿嶋行雄、松浦恵里子、嶋谷聡、小久保光典、田代貴晴、大川貴史、上村隆一郎、長田大和、平山秀樹
- Organizer
  電子情報通信学会　レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪大学、大阪府吹田市
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence
- Author(s)
  N. Kamata, A. Z. T. Islam, M. Julkarnain, N. Murakoshi, T. Fukuda and H. Hirayama
- Organizer
  International Workshop on Nitride semiconductors (IWN2014)
- Place of Presentation
  Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] AlGaN系UVC LEDへの透明p-AlGaN超格子ホール横拡散層の導入
- Author(s)
  前田哲利、定昌史、平山秀樹
- Organizer
  第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学、北海道札幌市
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 280nm AlGaN UVC LED using p-AlGaN SL transparent hole-spreading contact layer
- Author(s)
  N. Maeda, M. Jo and H. Hirayama
- Organizer
  The 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2014-12-14 – 2014-12-19
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 未踏波長半導体光源の開発とその応用
- Author(s)
  平山秀樹
- Organizer
  H24年度理研連携促進セミナー
- Place of Presentation
  和光、埼玉
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] テラヘルツ量子カスケードレーザの進展
- Author(s)
  平山秀樹
- Organizer
  理研先端光領域研究シンポジウム
- Place of Presentation
  和光、埼玉
- Invited
- Data Source
  KAKENHI-PROJECT-24246010
[Presentation] 超格子p型AlGaNホール拡散層を用いた深紫外LEDの動作
- Author(s)
  前田哲利、定昌史、平山秀樹
- Organizer
  電子情報通信学会　レーザ・量子エレクトロニクス研究会
- Place of Presentation
  大阪大学、大阪府吹田市
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-24246010

1. KAMATA Norihiko (50211173)

# of Collaborated Projects: 5 results

# of Collaborated Products: 140 results
2. TERASHIMA Wataru (30450406)

# of Collaborated Projects: 4 results

# of Collaborated Products: 86 results
3. AOYAGI Yoshinobu (70087469)

# of Collaborated Projects: 4 results

# of Collaborated Products: 21 results
4. KAWASAKI Koji (10234056)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. IWAI Souhachi (40087474)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
6. FUJIKAWA Sachie (90550327)

# of Collaborated Projects: 2 results

# of Collaborated Products: 21 results
7. IKEDA Noriaki (90267477)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
8. FUKUDA Takeshi (40509121)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
9. SEGAWA Yusaburo (30087473)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. TSUTSUI Kazuo (60188589)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. NOMURA Shintarou (90271527)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. YOSHIDA Hiroshi (30133929)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. TAKEUCHI Misaichi (60284585)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. INOUE Shinnichiro (20391865)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. MATSUMOTO Yuji (60302981)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. KOINUMA Hideomi (70011187)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. Yun Joosun (30817359)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
18. 田中悟 (80281640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 前田瑞夫 (10165657)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 荒川泰彦 (30134638)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 矢口裕之 (50239737)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 林宗澤 (40585155)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
23. 王利 (50804035)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. SHINYA Norio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. DEN Akiharu

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. MUROTANI Hideaki

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results
27. 山田陽一

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
28. WANG Ke

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

HIRAYAMA Hideki 平山 秀樹

平山 秀樹 ヒラヤマ ヒデキ

Research Projects

Research Products

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A Study on realizing unexplored frequency and room temperature operation THz-QCL through innovation of inter-subband transition mechanismPrincipal Investigator

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Searching new operation area for QCL by Gain Mapping using NEGF

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Characterization of defect levels in UV-LEDs by below-gap excitation light under operating condition

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Research on novel light emitting devices using the unique properties generated by singularity of crystalPrincipal Investigator

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Research on unexplored frequency quantum-cascade lasers using nitride semiconductorsPrincipal Investigator

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Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substratesPrincipal Investigator

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Comprehensive multi-level spectroscopy of below-gap states without electrode

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Research for Terahertz Quantum Cascade Lasers using Nitride-based SemiconductorsPrincipal Investigator

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Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope

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Research for Far-infrared-Terahertz Quantum Cascade Lasers using Nitride-based SemiconductorsPrincipal Investigator

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Research for high-efficiency deep-UV emitting devices using quaternary InAlGaN nitride semiconductorsPrincipal Investigator

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Development of deep UV light emitting devices using nano-technology and the application

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Development of ultraviolet bright light-emitting diodes using quaternary InAlGaNPrincipal Investigator

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HIRAYAMA Hideki 平山秀樹

平山秀樹ヒラヤマヒデキ