SUWA Tomoyuki 諏訪智之

… Alternative Names

諏訪智之スワトモユキ

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Researcher Number	70431541
Other IDs
Affiliation (based on the past Project Information) *help	2022 – 2023: 東北大学, 未来科学技術共同研究センター, 特任准教授 2009 – 2014: 東北大学, 未来科学技術共同研究センター, 助教 2007: Tohoku University, 未来科学技術共同研究センター, 助教 2006: 東北大学, 未来科学技術共同研究センター, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Engineering / Science and Engineering / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator ビット不良評価 / 原子オーダ平坦化 / ストレス誘起リーク電流 / トンネル絶縁膜 Except Principal Investigator 自己整合的しきい値電圧制御 / MONOS構造トランジスタ / しきい値電圧制御 / MONOS型トランジスタ / しきい値電圧チューニング / 電荷注入 … More / MONOS / しきい値電圧ばらつき / ポリシリコン / 薄膜トランジスタ / 3次元構造 / シリサイド / ラフネス / 面方位 / プラズマプロセス / シリコン表面平坦化 / MOSトランジスタ / 半導体製造装置 / 半導体製造プロセス / LSI / MOSFET / シリコン / 光電子分光法 / シリコン窒化膜 / シリコン酸化膜 / 界面 Less

ポリイミド基板上に集積した多数TFTの自己整合的な特性ばらつき均一化技術の確立
- Principal Investigator
  
  後藤哲也
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Foundation for Advancement of International Science
  Tohoku University
Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  2010 – 2014
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tohoku University
Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial Analyses
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tohoku University
高品質・高信頼性絶縁膜の形成プロセスに関する研究Principal Investigator
- Principal Investigator
  
  諏訪智之
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Young Scientists (Start-up)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University

All 2023 2015 2014 2013 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation

[Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers2015
- Author(s)
  Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4S Pages: 04DA04-04DA04
- DOI
  10.7567/jjap.54.04da04
- NAID
  210000144951
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010, KAKENHI-PROJECT-24360129, KAKENHI-PROJECT-26820121
[Journal Article] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching2014
- Author(s)
  Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Issue: 3 Pages: 47-53
- DOI
  10.1149/06103.0047ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014
- Author(s)
  Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 61 Issue: 2 Pages: 401-407
- DOI
  10.1149/06102.0401ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010, KAKENHI-PROJECT-24360129
[Journal Article] Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si (100) substrate near the interface2013
- Author(s)
  Tomoyuki Suwa, Akinobu Teramoto, Kohki Nagata, Atsushi Ogura, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, and Takeo Hattori
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 109 Pages: 197-199
- DOI
  10.1016/j.mee.2013.03.004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s2013
- Author(s)
  Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
- Journal Title
  
  IEEE Transactions on Semiconductor Manufacturing
  
  Volume: 26 Issue: 3 Pages: 288-295
- DOI
  10.1109/tsm.2013.2260568
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species2013
- Author(s)
  Tomoyuki Suwa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 3R Pages: 031302-031302
- DOI
  10.7567/jjap.52.031302
- NAID
  40019616826
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Influence of Forming Gas Annealing on SiO2/Si(100) Interface Structures Formed Utilizing Oxygen Molecules Different From That Utilizing Oxygen Radicals2012
- Author(s)
  Tomoyuki Suwa
- Journal Title
  
  ECS Transactions
  
  Volume: 45 Pages: 453-460
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface2012
- Author(s)
  Tomoyuki Suwa
- Journal Title
  
  ECS Transactions
  
  Volume: 50 Pages: 313-318
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Clear Difference between the Chemical Structure of SiO_2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules2011
- Author(s)
  Tomoyuki Suwa
- Journal Title
  
  ECS Transactions
  
  Volume: 35 Pages: 115-122
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010
- Author(s)
  T.Suwa, A.Teramoto, Y.Kumagai, K.Abe, X.Li, Y.Nakao, M.Yamamoto, Y.Kato, T.Muro, T.Kinoshita, T.Ohmi, T.Hattori
- Journal Title
  
  Journal of Applied Physics Letters
  
  Volume: 96 Pages: 173103-173104
- NAID
  110008106358
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Atomically Flattening Technology at 850℃ for Si(100) Surface2010
- Author(s)
  X.Li, T.Suwa, A.Teramoto, R.Kuroda, S.Sugawa, T.Ohmi
- Journal Title
  
  ECS Transactions
  
  Volume: 28 Pages: 299-309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010
- Author(s)
  T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori
- Journal Title
  
  Applied Physics Letters Vol. 96, No. 10
- NAID
  110008106358
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010
- Author(s)
  T.Suwa
- Journal Title
  
  Applied Physics Letters Vol.96
- NAID
  110008106358
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Atomically Flat Silicon Surface and Silicon /Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs2009
- Author(s)
  R. Kuroda, T. Suwa, A. Teramoto, R. Hasebe, S. Sugawa, T. Ohmi
- Journal Title
  
  IEEE Trans.Electron Devices Vol. 56, No. 2
  
  Pages: 291-298
- NAID
  120002338863
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Complementary Metal-Oxide-Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface2009
- Author(s)
  R. Kuroda, A. Teramoto, Y. Nakao, T. Suwa, M. Konda, R. Hasebe, X. Li, T. Isogai, H. Tanaka, S. Sugawa, T. Ohmi
- Journal Title
  
  Jpn.J.Appl.Phys vol. 48
- NAID
  210000066559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si_3N_4/Si interfaces formed using nitrogen-hydrogen radicals2008
- Author(s)
  T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
- Journal Title
  
  Journal of Applied Physics Vol. 104, No. 11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Journal Article] Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O_2/NO Plasma Oxynitridation2007
- Author(s)
  Tomoyuki Suwa
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 2148-2152
- NAID
  10022545171
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18860006
[Journal Article] ラジカル窒化シリコン酸窒化膜における窒素プロファイルのX線光電子分光分析による評価2007
- Author(s)
  河瀬和雅, 梅田浩司, 井上真雄, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
- Journal Title
  
  真空 (日本真空協会) Vol. 50, No. 11
  
  Pages: 672-677
- NAID
  10020009875
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] MONOS 型低温ポリシリコン TFT におけるしきい値電圧制御2023
- Author(s)
  後藤哲也，諏訪智之，片山慶太, 西田脩, 池上浩, 須川成利
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] MONOS 型ポリシリコンTFT でのしきい値電圧制御に関する検討2023
- Author(s)
  後藤哲也，諏訪智之，須川成利
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] Threshold Voltage Control of LTPS TFTs with MONOS Structure2023
- Author(s)
  Tetsuya Goto, Tomoyuki Suwa, Keita Katayama, Shu Nishida, Hiroshi Ikenoue, and Shigetoshi Sugawa
- Organizer
  2023 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] Characterization of MONOS-Type Polycrystalline Silicon Thin Film Transistors2023
- Author(s)
  Tetsuya Goto, Tomoyuki Suwa, Keita Katayama, Shu Nishida, Hiroshi Ikenoue, and Shigetoshi Sugawa
- Organizer
  2023Asia-Pacific Workshop on Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers2014
- Author(s)
  T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and K. Sibusawa
- Organizer
  The 2014 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center, つくば
- Year and Date
  2014-09-09
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] 応用物理学会優秀論文賞受賞記念講演"Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species"2014
- Author(s)
  諏訪智之、寺本章伸、熊谷勇喜、阿部健一、李翔、中尾幸久、山本雅士、野平博司、室隆桂之、木下豊彦、須川成利、大見忠弘、服部健雄
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学, 札幌
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014
- Author(s)
  Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
- Organizer
  225th Meeting of The Electrochemical Society
- Place of Presentation
  Hilton Orlando Bonnet Creek, Orlando, USA
- Year and Date
  2014-05-14
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching2014
- Author(s)
  Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
- Organizer
  225th Meeting of The Electrochemical Society
- Place of Presentation
  Hilton Orlando Bonnet Creek, Orlando, USA
- Year and Date
  2014-05-13
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Detection of oxidation-induced compressive stress in Si (100) substrate near the SiO2/Si interface with atomic-scale resolution2013
- Author(s)
  T. Suwa, K. Nagata, H. Nohira, K. Nakajima, A. Teramoto, A. Ogura, K. Kimura, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, T. Ohmi
- Organizer
  The 2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Angle-Resolved Photoelectron Spectroscopy Study on Interfacial Transition Layer and Oxidation-Induced Residual Stress in Si (100) Substrate Near the Interface2013
- Author(s)
  T. Suwa, A. Teramoto, K. Nagata, A. Ogura, T. Muro, T. Kinoshita, T. Ohmi, and T. Hattori
- Organizer
  18th Conference of "Insulating Films on Semiconductors"
- Place of Presentation
  Cracow, Poland
- Year and Date
  2013-06-26
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Clear difference between the chemical structure of SiO_2/Si interface formed using oxygen radicals and that formed using oxygen molecules2011
- Author(s)
  Tomoyuki Suwa
- Organizer
  219th Meeting of The Electrochemical Society
- Place of Presentation
  Montreal, Canada
- Year and Date
  2011-05-02
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Clear Difference between Chemical Structure of SiO_2/Si Interface Formed Using Oxygen Radicals and That Formed Using Oxygen Molecules2011
- Author(s)
  Tomoyuki Suwa
- Organizer
  2011 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  Nagoya
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] High reliable SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing2011
- Author(s)
  X.Li, R.Kuroda, T.Suwa, A.Teramoto, S.Sugawa, T.Ohmi
- Organizer
  2011 Interanational Workshop on Dielectric Thin Films For Future Electron Devices : Science and Technology
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] 原子スケールで平坦なSiO_2/Si界面極近傍における歪評価2010
- Author(s)
  服部真季, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘, 小金澤智之, 廣沢一郎
- Organizer
  応用物理学会、19p-P13-13
- Place of Presentation
  東海大学
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] Study on Compositional Tran-sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron2009
- Author(s)
  T. Suwa, T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, T. Hattori
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009)
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] UV-Raman Spectroscopy Study on SiO_2/Si Interface2009
- Author(s)
  M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, A. Teramoto, T. Hattori, T. Ohmi
- Organizer
  Symposium on Dielectric and Semiconductor Materials、Devices、and Processing、215th ECS Meeting
- Place of Presentation
  San Francisco
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] Study on Compositional Tran- sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron2009
- Author(s)
  T.Suwa
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Busan、Korea
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] UVラマン分光法によるSiO_2/Si界面の評価2009
- Author(s)
  服部真季, 吉田哲也, 小瀬村大亮, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
- Organizer
  応用物理学会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-19360014
[Presentation] シリコン表面の原子オーダー平坦化技術2007
- Author(s)
  諏訪智之
- Organizer
  電子情報通信学会シリコン材料・デバイス研究
- Place of Presentation
  仙台
- Year and Date
  2007-10-05
- Data Source
  KAKENHI-PROJECT-18860006
[Presentation] Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species
- Author(s)
  Tomoyuki Suwa
- Organizer
  2012 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface
- Author(s)
  Tomoyuki Suwa
- Organizer
  222th Meeting of The Electrochemical Society
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Changes in SiO2/Si(100) Interface Structure Induced by Forming Gas Annealing
- Author(s)
  Tomoyuki Suwa
- Organizer
  221th Meeting of The Electrochemical Society
- Place of Presentation
  Seattle, USA
- Data Source
  KAKENHI-PROJECT-22000010

1. GOTO Tetsuya (00359556)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
2. HATTORI Takeo (10061516)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
3. KIMURA Kenji (50127073)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. NAKAJIMA Kaoru (80293885)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. NOHIRA Hiroshi (30241110)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
6. TERAMOTO Akinobu (80359554)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
7. KINOSHITA Toyohiko (60202040)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. OHMI Tadahiro (20016463)

# of Collaborated Projects: 1 results

# of Collaborated Products: 14 results
9. HIRAYAMA Masaki (70250701)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SUWA Tomoyuki 諏訪 智之

諏訪 智之 スワ トモユキ

Research Projects

Research Products

Co-Researchers

ポリイミド基板上に集積した多数TFTの自己整合的な特性ばらつき均一化技術の確立

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial Analyses

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

高品質・高信頼性絶縁膜の形成プロセスに関する研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si (100) substrate near the interface2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species2013

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Influence of Forming Gas Annealing on SiO2/Si(100) Interface Structures Formed Utilizing Oxygen Molecules Different From That Utilizing Oxygen Radicals2012

Author(s)

Journal Title

Data Source

[Journal Article] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface2012

Author(s)

Journal Title

Data Source

[Journal Article] Clear Difference between the Chemical Structure of SiO_2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules2011

Author(s)

Journal Title

Data Source

[Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Atomically Flattening Technology at 850℃ for Si(100) Surface2010

Author(s)

SUWA Tomoyuki 諏訪智之

諏訪智之スワトモユキ