• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

SUWA Tomoyuki  諏訪 智之

ORCIDConnect your ORCID iD *help
… Alternative Names

諏訪 智之  スワ トモユキ

Less
Researcher Number 70431541
Other IDs
Affiliation (based on the past Project Information) *help 2022 – 2023: 東北大学, 未来科学技術共同研究センター, 特任准教授
2009 – 2014: 東北大学, 未来科学技術共同研究センター, 助教
2007: Tohoku University, 未来科学技術共同研究センター, 助教
2006: 東北大学, 未来科学技術共同研究センター, 助手
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
Basic Section 21050:Electric and electronic materials-related / Engineering / Science and Engineering / Thin film/Surface and interfacial physical properties
Keywords
Principal Investigator
ビット不良評価 / 原子オーダ平坦化 / ストレス誘起リーク電流 / トンネル絶縁膜
Except Principal Investigator
自己整合的しきい値電圧制御 / MONOS構造トランジスタ / しきい値電圧制御 / MONOS型トランジスタ / しきい値電圧チューニング / 電荷注入 … More / MONOS / しきい値電圧ばらつき / ポリシリコン / 薄膜トランジスタ / 3次元構造 / シリサイド / ラフネス / 面方位 / プラズマプロセス / シリコン表面平坦化 / MOSトランジスタ / 半導体製造装置 / 半導体製造プロセス / LSI / MOSFET / シリコン / 光電子分光法 / シリコン窒化膜 / シリコン酸化膜 / 界面 Less
  • Research Projects

    (4 results)
  • Research Products

    (40 results)
  • Co-Researchers

    (9 People)
  •  ポリイミド基板上に集積した多数TFTの自己整合的な特性ばらつき均一化技術の確立

    • Principal Investigator
      後藤 哲也
    • Project Period (FY)
      2022 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Foundation for Advancement of International Science
      Tohoku University
  •  Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface

    • Principal Investigator
      OHMI Tadahiro
    • Project Period (FY)
      2010 – 2014
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
      Engineering
    • Research Institution
      Tohoku University
  •  Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial Analyses

    • Principal Investigator
      HATTORI Takeo
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Tohoku University
  •  高品質・高信頼性絶縁膜の形成プロセスに関する研究Principal Investigator

    • Principal Investigator
      諏訪 智之
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Young Scientists (Start-up)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tohoku University

All 2023 2015 2014 2013 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation

  • [Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers2015

    • Author(s)
      Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DA04-04DA04

    • DOI

      10.7567/jjap.54.04da04

    • NAID

      210000144951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010, KAKENHI-PROJECT-24360129, KAKENHI-PROJECT-26820121
  • [Journal Article] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching2014

    • Author(s)
      Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Journal Title

      ECS Transactions

      Volume: 61 Issue: 3 Pages: 47-53

    • DOI

      10.1149/06103.0047ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014

    • Author(s)
      Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Journal Title

      ECS Transactions

      Volume: 61 Issue: 2 Pages: 401-407

    • DOI

      10.1149/06102.0401ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010, KAKENHI-PROJECT-24360129
  • [Journal Article] Angle-resolved photoelectron spectroscopy study on interfacial transition layer and oxidation-induced residual stress in Si (100) substrate near the interface2013

    • Author(s)
      Tomoyuki Suwa, Akinobu Teramoto, Kohki Nagata, Atsushi Ogura, Hiroshi Nohira, Takayuki Muro, Toyohiko Kinoshita, Shigetoshi Sugawa, Tadahiro Ohmi, and Takeo Hattori
    • Journal Title

      Microelectronic Engineering

      Volume: 109 Pages: 197-199

    • DOI

      10.1016/j.mee.2013.03.004

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] A Test Circuit for Extremely Low Gate Leakage Current Measurement of 10 aA for 80 000 MOSFETs in 80 s2013

    • Author(s)
      Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Journal Title

      IEEE Transactions on Semiconductor Manufacturing

      Volume: 26 Issue: 3 Pages: 288-295

    • DOI

      10.1109/tsm.2013.2260568

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species2013

    • Author(s)
      Tomoyuki Suwa
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 3R Pages: 031302-031302

    • DOI

      10.7567/jjap.52.031302

    • NAID

      40019616826

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] Influence of Forming Gas Annealing on SiO2/Si(100) Interface Structures Formed Utilizing Oxygen Molecules Different From That Utilizing Oxygen Radicals2012

    • Author(s)
      Tomoyuki Suwa
    • Journal Title

      ECS Transactions

      Volume: 45 Pages: 453-460

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface2012

    • Author(s)
      Tomoyuki Suwa
    • Journal Title

      ECS Transactions

      Volume: 50 Pages: 313-318

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] Clear Difference between the Chemical Structure of SiO_2/Si Interfaces Formed Using Oxygen Radicals versus Oxygen Molecules2011

    • Author(s)
      Tomoyuki Suwa
    • Journal Title

      ECS Transactions

      Volume: 35 Pages: 115-122

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010

    • Author(s)
      T.Suwa, A.Teramoto, Y.Kumagai, K.Abe, X.Li, Y.Nakao, M.Yamamoto, Y.Kato, T.Muro, T.Kinoshita, T.Ohmi, T.Hattori
    • Journal Title

      Journal of Applied Physics Letters

      Volume: 96 Pages: 173103-173104

    • NAID

      110008106358

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] Atomically Flattening Technology at 850℃ for Si(100) Surface2010

    • Author(s)
      X.Li, T.Suwa, A.Teramoto, R.Kuroda, S.Sugawa, T.Ohmi
    • Journal Title

      ECS Transactions

      Volume: 28 Pages: 299-309

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010

    • Author(s)
      T. Suwa, A. Teramoto, Y. Kumagai, K. Abe, X. Li, Y. Nakao, M. Yamamoto, Y. Kato, T. Muro, T. Kinoshita, T. Ohmi, T. Hattori
    • Journal Title

      Applied Physics Letters Vol. 96, No. 10

    • NAID

      110008106358

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals2010

    • Author(s)
      T.Suwa
    • Journal Title

      Applied Physics Letters Vol.96

    • NAID

      110008106358

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Atomically Flat Silicon Surface and Silicon /Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs2009

    • Author(s)
      R. Kuroda, T. Suwa, A. Teramoto, R. Hasebe, S. Sugawa, T. Ohmi
    • Journal Title

      IEEE Trans.Electron Devices Vol. 56, No. 2

      Pages: 291-298

    • NAID

      120002338863

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Complementary Metal-Oxide-Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface2009

    • Author(s)
      R. Kuroda, A. Teramoto, Y. Nakao, T. Suwa, M. Konda, R. Hasebe, X. Li, T. Isogai, H. Tanaka, S. Sugawa, T. Ohmi
    • Journal Title

      Jpn.J.Appl.Phys vol. 48

    • NAID

      210000066559

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Angle-resolved photoelectron study on the structures of silicon nitride films and Si_3N_4/Si interfaces formed using nitrogen-hydrogen radicals2008

    • Author(s)
      T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, T. Suwa, A. Teramoto, T. Ohmi, T. Hattori
    • Journal Title

      Journal of Applied Physics Vol. 104, No. 11

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Journal Article] Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O_2/NO Plasma Oxynitridation2007

    • Author(s)
      Tomoyuki Suwa
    • Journal Title

      Japanese Journal of Applied Physics 46

      Pages: 2148-2152

    • NAID

      10022545171

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18860006
  • [Journal Article] ラジカル窒化シリコン酸窒化膜における窒素プロファイルのX線光電子分光分析による評価2007

    • Author(s)
      河瀬和雅, 梅田浩司, 井上真雄, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
    • Journal Title

      真空 (日本真空協会) Vol. 50, No. 11

      Pages: 672-677

    • NAID

      10020009875

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] MONOS 型低温ポリシリコン TFT におけるしきい値電圧制御2023

    • Author(s)
      後藤 哲也,諏訪 智之,片山 慶太, 西田 脩, 池上 浩, 須川 成利
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K04194
  • [Presentation] MONOS 型ポリシリコンTFT でのしきい値電圧制御に関する検討2023

    • Author(s)
      後藤 哲也,諏訪 智之,須川 成利
    • Organizer
      2023年第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-22K04194
  • [Presentation] Threshold Voltage Control of LTPS TFTs with MONOS Structure2023

    • Author(s)
      Tetsuya Goto, Tomoyuki Suwa, Keita Katayama, Shu Nishida, Hiroshi Ikenoue, and Shigetoshi Sugawa
    • Organizer
      2023 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04194
  • [Presentation] Characterization of MONOS-Type Polycrystalline Silicon Thin Film Transistors2023

    • Author(s)
      Tetsuya Goto, Tomoyuki Suwa, Keita Katayama, Shu Nishida, Hiroshi Ikenoue, and Shigetoshi Sugawa
    • Organizer
      2023Asia-Pacific Workshop on Advanced Semiconductor Devices
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22K04194
  • [Presentation] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers2014

    • Author(s)
      T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and K. Sibusawa
    • Organizer
      The 2014 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba International Congress Center, つくば
    • Year and Date
      2014-09-09
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] 応用物理学会優秀論文賞受賞記念講演"Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species"2014

    • Author(s)
      諏訪智之、寺本章伸、熊谷勇喜、阿部健一、李翔、中尾幸久、山本雅士、野平博司、室隆桂之、木下豊彦、須川成利、大見忠弘、服部健雄
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学, 札幌
    • Year and Date
      2014-09-19
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] Flattening Technique of (551) Silicon Surface Using Xe/H2 Plasma2014

    • Author(s)
      Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Organizer
      225th Meeting of The Electrochemical Society
    • Place of Presentation
      Hilton Orlando Bonnet Creek, Orlando, USA
    • Year and Date
      2014-05-14
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] Effect of Composition Ratio on Erbium Silicide Work Function on Different Morphology of Si(100) Surface Changed by Alkaline Etching2014

    • Author(s)
      Hiroaki Tanaka, Tomoyuki Suwa, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, and Tadahiro Ohmi
    • Organizer
      225th Meeting of The Electrochemical Society
    • Place of Presentation
      Hilton Orlando Bonnet Creek, Orlando, USA
    • Year and Date
      2014-05-13
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] Detection of oxidation-induced compressive stress in Si (100) substrate near the SiO2/Si interface with atomic-scale resolution2013

    • Author(s)
      T. Suwa, K. Nagata, H. Nohira, K. Nakajima, A. Teramoto, A. Ogura, K. Kimura, T. Muro, T. Kinoshita, S. Sugawa, T. Hattori, T. Ohmi
    • Organizer
      The 2013 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Fukuoka, Japan
    • Year and Date
      2013-09-26
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] Angle-Resolved Photoelectron Spectroscopy Study on Interfacial Transition Layer and Oxidation-Induced Residual Stress in Si (100) Substrate Near the Interface2013

    • Author(s)
      T. Suwa, A. Teramoto, K. Nagata, A. Ogura, T. Muro, T. Kinoshita, T. Ohmi, and T. Hattori
    • Organizer
      18th Conference of "Insulating Films on Semiconductors"
    • Place of Presentation
      Cracow, Poland
    • Year and Date
      2013-06-26
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] Clear difference between the chemical structure of SiO_2/Si interface formed using oxygen radicals and that formed using oxygen molecules2011

    • Author(s)
      Tomoyuki Suwa
    • Organizer
      219th Meeting of The Electrochemical Society
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2011-05-02
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] Clear Difference between Chemical Structure of SiO_2/Si Interface Formed Using Oxygen Radicals and That Formed Using Oxygen Molecules2011

    • Author(s)
      Tomoyuki Suwa
    • Organizer
      2011 International Conference on SOLID STATE DEVICES AND MATERIALS
    • Place of Presentation
      Nagoya
    • Year and Date
      2011-09-29
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] High reliable SiO_2 Films on Atomically Flat Silicon Surface Formed by Low Temperature Pure Ar Annealing2011

    • Author(s)
      X.Li, R.Kuroda, T.Suwa, A.Teramoto, S.Sugawa, T.Ohmi
    • Organizer
      2011 Interanational Workshop on Dielectric Thin Films For Future Electron Devices : Science and Technology
    • Place of Presentation
      東京
    • Year and Date
      2011-01-20
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] 原子スケールで平坦なSiO_2/Si界面極近傍における歪評価2010

    • Author(s)
      服部真季, 小瀬村大亮, 武井宗久, 永田晃基, 赤松弘彬, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘, 小金澤智之, 廣沢一郎
    • Organizer
      応用物理学会、19p-P13-13
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-19
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] Study on Compositional Tran-sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron2009

    • Author(s)
      T. Suwa, T. Aratani, M. Higuchi, S. Sugawa, E. Ikenaga, J. Ushio, H. Nohira, A. Teramoto, T. Ohmi, T. Hattori
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2009)
    • Place of Presentation
      Busan, Korea
    • Year and Date
      2009-06-25
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] UV-Raman Spectroscopy Study on SiO_2/Si Interface2009

    • Author(s)
      M. Hattori, T. Yoshida, D. Kosemura, A. Ogura, T. Suwa, A. Teramoto, T. Hattori, T. Ohmi
    • Organizer
      Symposium on Dielectric and Semiconductor Materials、Devices、and Processing、215th ECS Meeting
    • Place of Presentation
      San Francisco
    • Year and Date
      2009-05-25
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] Study on Compositional Tran- sition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron2009

    • Author(s)
      T.Suwa
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Busan、Korea
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] UVラマン分光法によるSiO_2/Si界面の評価2009

    • Author(s)
      服部真季, 吉田哲也, 小瀬村大亮, 小椋厚志, 諏訪智之, 寺本章伸, 服部健雄, 大見忠弘
    • Organizer
      応用物理学会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PROJECT-19360014
  • [Presentation] シリコン表面の原子オーダー平坦化技術2007

    • Author(s)
      諏訪智之
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究
    • Place of Presentation
      仙台
    • Year and Date
      2007-10-05
    • Data Source
      KAKENHI-PROJECT-18860006
  • [Presentation] Dependence of chemical structures of transition layer at SiO2/Si(100) interface on oxidation temperature, annealing in forming gas, and oxidizing species

    • Author(s)
      Tomoyuki Suwa
    • Organizer
      2012 International Conference on SOLID STATE DEVICES AND MATERIALS
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] Comprehensive Study on Chemical Structures of Compositional Transition Layer at SiO2/Si(100) Interface

    • Author(s)
      Tomoyuki Suwa
    • Organizer
      222th Meeting of The Electrochemical Society
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-22000010
  • [Presentation] Changes in SiO2/Si(100) Interface Structure Induced by Forming Gas Annealing

    • Author(s)
      Tomoyuki Suwa
    • Organizer
      221th Meeting of The Electrochemical Society
    • Place of Presentation
      Seattle, USA
    • Data Source
      KAKENHI-PROJECT-22000010
  • 1.  GOTO Tetsuya (00359556)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 6 results
  • 2.  HATTORI Takeo (10061516)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 7 results
  • 3.  KIMURA Kenji (50127073)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  NAKAJIMA Kaoru (80293885)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  NOHIRA Hiroshi (30241110)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 6.  TERAMOTO Akinobu (80359554)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 9 results
  • 7.  KINOSHITA Toyohiko (60202040)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 8.  OHMI Tadahiro (20016463)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 14 results
  • 9.  HIRAYAMA Masaki (70250701)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

URL: 

Are you sure that you want to link your ORCID iD to your KAKEN Researcher profile?
* This action can be performed only by the researcher himself/herself who is listed on the KAKEN Researcher’s page. Are you sure that this KAKEN Researcher’s page is your page?

この研究者とORCID iDの連携を行いますか?
※ この処理は、研究者本人だけが実行できます。

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi