Chichibu Shigefusa 秩父重英

… Alternative Names

CHICHIBU Shigefusa 秩父重英

秩父重英チチブシゲフサ

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Researcher Number	80266907
Other IDs
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Affiliation (Current)	2025: 東北大学, 多元物質科学研究所, 教授
Affiliation (based on the past Project Information) *help	2015 – 2024: 東北大学, 多元物質科学研究所, 教授 2006 – 2013: 東北大学, 多元物質科学研究所, 教授 2006: University of Tsukuba, Graduate School of Pure and Applied Sciences, Associate Professor, 大学院数理物質科学研究科, 助教授 2004 – 2005: 筑波大学, 大学院・数理物質科学研究科, 助教授 1999 – 2003: 筑波大学, 物理工学系, 助教授 1995: 東京理科大学, 理工学部, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 21050:Electric and electronic materials-related / Condensed matter physics I / Science and Engineering Except Principal Investigator Basic Section 30010:Crystal engineering-related / Medium-sized Section 30:Applied physics and engineering and related fields / Basic Section 21020:Communication and network engineering-related / Crystal engineering / Electronic materials/Electric materials / 電子デバイス・機器工学 / Science and Engineering
Keywords	Principal Investigator 酸化亜鉛 / 励起子 / 励起子ポラリトン / ヘリコン波励起プラズマ / エピタキシャル成長 / エピタキシー / 窒化ホウ素 / ポリタイプ / 窒化ホウ素(BN) / 窒化ボロン … More / フェムト秒電子銃 / 時間空間同時分解分光 / ヘリコン波励起プラズマスパッタ / 微小共振器 / 電気・電子材料 / MgZnO / 分布ブラッグ反射鏡 / フォトルミネッセンス / 量子井戸 / 気相合成 / グラファイト相BN / 閃亜鉛鉱構造 / 六方晶 / 時間分解分光 / 深紫外線 / 直接遷移 / 間接遷移 / カソードルミネッセンス / 電子顕微鏡 / フェムト秒電子線 / フェムト秒集束電子線 / フェムト秒レーザ / BN / 光電子銃 / 半導体物性 / AlInN / 空間分解 / 時間分解 / フェムト秒励起 / 結晶成長 / 結晶工学 / 特異構造 / 光物性 / magnesium zinc oxide / multilayer structures / epitaxy / distributed Bragg reflector / transparent conducting oxides / dielectric oxides / zinc oxide / Helicon-wave-excited-plasma / 酸化マグネシウム亜鉛 / 多層構造 / 透明導電膜 / 誘電体酸化物 / 結晶評価 / 時間空間同時分解計測 / ワイドバンドギャップ半導体 / 高輝度フェムト秒収束電子線 / 縮退四光波混合 / ポラリトンレーザー / 電子・電気材料 / 反射鏡 / 多層膜 / 共振器 / 誘電体多層膜 / 紫外光 / N_2O / プラズマ / ヘリコン波 / ZnO / スパッタ / フォトルシネセンス / 紫外線発光 / 原子層 / プラズマ分光 / MBE / 時間分解PL / フォトルミネッセンス(PL) / 局在励起子 / 組成不均一性 / InGaN混晶 / 立方晶窒化物 / 窒化物半導体 / エキシトン発光 / 結晶場分裂エネルギー / 光・キャリア閉じ込め / ドメイン構造 / 熱膨張係数 / 可視発光 / 混晶組成制御 … More Except Principal Investigator 陽電子消滅 / GaN / 点欠陥 / ZnO / BaSi_2 / III族窒化物半導体 / II属窒化物半導体 / フォトルミネッセンス / 不純物活性化 / イオン注入 / III属窒化物半導体 / 2次元原子層基板 / 高圧下結晶成長 / 窒化ホウ素 / 不純物制御 / 合成合成 / 六方晶窒化ホウ素単結晶 / インターカーレーション / 2次元光・電子デバイス / 高純度単結晶 / 反応性溶媒 / 遠紫外線発光 / 高圧合成 / 六方晶窒化ホウ素 / ５G / 窒化物光半導体 / ソーラーブラインド / MIMO伝送 / ソーラーブラインド通信 / 光センシング / 深紫外LED / 光無線通信 / 光物性 / 非極性面 / 深紫外光源 / AlInN / REAR EARTH / IMPURITY DOPING / POINT DEFECT / MONOENERGETIC POSITRON BEAM / POSITRON ANNIHILATION / Eu / Tb / 希土類ドープ / 不純物ドープ / 低速陽電子ビーム / energy band structure / control of conduction type / MBE growth / beta-FeSi2 / silicide / solar battery / 鉄シリサイド / 移動度 / 同時蒸着法 / 多層膜法 / エネルギーバンド構造 / エネルギー・バンド構造 / 伝導型制御 / MBE成長 / β-FeSi_2 / シリサイド / 太陽電池 / CL / MBE / AIN / 非輻射再結合 / 第一原理計算 / 光学測定 / InN / AlN / 発光ダイナミックス Less

グラファイト型層状窒化ホウ素の気相合成と光電子素子材料としての物性解明Principal Investigator
- Principal Investigator
  
  秩父重英
- Project Period (FY)
  2023 – 2024
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tohoku University
六方晶および閃亜鉛鉱構造窒化ホウ素の高温気相エピタキシャル成長と導電性制御Principal Investigator
- Principal Investigator
  
  秩父重英
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Tohoku University
A study of the activation mechanism of implanted impurities and control of point defect in group III nitride
- Principal Investigator
  
  上殿明良
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  University of Tsukuba
Modification of the bandgap of hexagonal BN and deep-ultraviolet luminescence dynamics of excitons in themPrincipal Investigator
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tohoku University
Synthesis of high quality single crystals for sience of Boron Nitride
- Principal Investigator
  
  TANIGUCHI Takashi
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  National Institute for Materials Science
LED-based optical wireless communications in the solar-blind band
- Principal Investigator
  
  Yoshinari Awaji
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21020:Communication and network engineering-related
- Research Institution
  National Institute of Information and Communications Technology
Developement and application of spatio-time-resolved cathodoluminescence for wide bandgap nanostructuresPrincipal Investigator
- Principal Investigator
  
  Chichibu Shigefusa
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Condensed matter physics I
- Research Institution
  Tohoku University
Spatio-time-resolved cathodoluminescence studies on singularity crystalsPrincipal Investigator
- Principal Investigator
  
  Chichibu Shigefusa
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Luminescence dynamics of BN exhibiting large excitonic effects in the deep ultraviolet wavelength regionPrincipal Investigator
- Principal Investigator
  
  Chichibu Shigefusa
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Realization of high-power and high-efficiency light-emitting devices based on AlInN
- Principal Investigator
  
  Kojima Kazunobu
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Tohoku University
Development of a spatio-time-resolved cathodoluminescence spectroscopy technique applicable for wide bandgap semiconductors through the generation and focusing of high-brightness femtosecond pulsed photoelectron beamsPrincipal Investigator
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Helicon-wave-excited-plasma sputtering epitaxy of polariton laser structures for room temperature operationPrincipal Investigator
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2010 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Epitaxial growth and fabrication of microcavities by the helicon-wave-excited-plasma sputtering methodPrincipal Investigator
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Study of point defects and light-emitting dynamics in group-III nitride semiconductors
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Development of oxide semiconductor and dielectric electronics using helicon-wave-excited-plasma sputtering methodsPrincipal Investigator
- Principal Investigator
  
  CHICHIBU Shigefusa
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
酸化亜鉛系半導体を用いた室温動作励起子ポラリトンレーザ実現に関する基礎研究Principal Investigator
- Principal Investigator
  
  秩父重英
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
ヘリコン波励起プラズマスパッタエピタキシー法の提案と酸化物半導体ナノ構造の形成Principal Investigator
- Principal Investigator
  
  秩父重英
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
STUDY OF POINT DEFECTS IN GaN AND RELATED COMPOUND SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATION
- Principal Investigator
  
  UEDONO Akira
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  UNIVERSITY OF TSUKUBA
Investigation of a solar battery using the environmentally friendly semiconductor : beta-FeSi_2
- Principal Investigator
  
  HASEGAWA Fumio
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  University of Tsukuba
窒化物半導体量子井戸構造の光学遷移過程における励起子局在効果の研究Principal Investigator
- Principal Investigator
  
  秩父重英
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
MOCVD成長高品質銅カルコパイライト半導体エピタキシャル層の発光素子化検討Principal Investigator
- Principal Investigator
  
  秩父重英
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo University of Science

[Book] 2020版薄膜作製応用ハンドブック2020
- Author(s)
  秩父重英
- Total Pages
  14
- Publisher
  (株)エヌ・ティー・エス
- ISBN
  9784860436315
- Data Source
  KAKENHI-PROJECT-17H02907
[Book] 2020版薄膜作製応用ハンドブック2020
- Author(s)
  秩父重英
- Total Pages
  14
- Publisher
  (株)エヌ・ティー・エス
- ISBN
  9784860436315
- Data Source
  KAKENHI-PLANNED-16H06427
[Book] 「ワイドバンドギャップ半導体の新機能出現と時間空間分解分光計測」2011
- Author(s)
  秩父重英,羽豆耕治
- Publisher
  マテリアルインテグレーション(特集:地域と世界に貢献する東北大学多元物質科学研究所)、第24巻,4,5月号
- Data Source
  KAKENHI-PROJECT-23656206
[Book] Technology of Gallium Nitride Crystal Growth, edited by D.Ehrentraut, E.Meissner, and M.Bockowski "Chapter 13, Optical properties of GaN substrates", pp.277-293. ISBN 978-3-642-04828-9 e-ISBN 978-3-642-04830-22009
- Author(s)
  S.F.Chichibu
- Publisher
  Springer Series in Materials Sciences, 2009
- Data Source
  KAKENHI-PLANNED-18069001
[Book] Advances in Light Emitting Materials(edited by B. Monemar and H.Grimmeiss)("Impact of Point Defects on the Luminescence Properties of (Al,Ga)N", Materials Science Forum 590, pp.233-248(2008) ISBN0-87849-358-1 ISBN-13978-087849-358-6)2008
- Author(s)
  S.F.Chichibu, A.Uedono, T.Onuma, S.P.DenBaars, U.K.Mishra, J.S.Speck, S.Nakamura
- Total Pages
  278
- Publisher
  Trans Tech Publications, Stafa-Zuerich
- Data Source
  KAKENHI-PLANNED-18069001
[Book] Advances in Light Emitting Materials2008
- Author(s)
  S. F. Chichibu
- Total Pages
  16
- Publisher
  Trans Tech Publications
- Data Source
  KAKENHI-PLANNED-18069001
[Book] Advances in Light Emitting Materials, edited by B. Monemar and H. Grimmeiss, (edited by B. Monemar and H. Grimmeiss), (Impact of Point Defects on the Luminescence Properties of (Al,Ga)N)2008
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, S. P. DenBaars, U. K. Mishra, J. S. Speck and S. Nakamura
- Total Pages
  278
- Publisher
  Stafa-Zuerich
- Data Source
  KAKENHI-PLANNED-18069001
[Book] 第42回応用物理学会スクール (2008年春季)2008
- Author(s)
  秩父重英, 他
- Data Source
  KAKENHI-PROJECT-19360137
[Journal Article] Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam2023
- Author(s)
  Uedono Akira、Sakurai Hideki、Uzuhashi Jun、Narita Tetsuo、Sierakowski Kacper、Ishibashi Shoji、Chichibu Shigefusa F.、Bockowski Michal、Suda Jun、Ohokubo Tadakatsu、Ikarashi Nobuyuki、Hono Kazuhiro、Kachi Tetsu
- Journal Title
  
  Proc. SPIE 12421, Gallium Nitride Materials and Devices
  
  Volume: XVIII Pages: 25-25
- DOI
  10.1117/12.2646233
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21082
[Journal Article] Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors [Featured Article]2022
- Author(s)
  Chichibu S. F.、Shima K.、Kikuchi K.、Umehara N.、Takiguchi K.、Ishitani Y.、Hara K.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 120 Issue: 23 Pages: 2319041-7
- DOI
  10.1063/5.0090431
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K20993
[Journal Article] Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation2022
- Author(s)
  Uedono Akira、Sakurai Hideki、Uzuhashi Jun、Narita Tetsuo、Sierakowski Kacper、Ishibashi Shoji、Chichibu Shigefusa F.、Bockowski Michal、Suda Jun、Ohkubo Tadakatsu、Ikarashi Nobuyuki、Hono Kazuhiro、Kachi Tetsu
- Journal Title
  
  physica status solidi (b)
  
  Volume: 259 Issue: 10 Pages: 2200183-2200183
- DOI
  10.1002/pssb.202200183
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21082
[Journal Article] Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg2021
- Author(s)
  Shima K.、Tanaka R.、Takashima S.、Ueno K.、Edo M.、Kojima K.、Uedono A.、Ishibashi S.、Chichibu S. F.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 119 Issue: 18 Pages: 182106-182106
- DOI
  10.1063/5.0066347
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K21082
[Journal Article] Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam2021
- Author(s)
  Uedono Akira、Tanaka Ryo、Takashima Shinya、Ueno Katsunori、Edo Masaharu、Shima Kohei、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
- Journal Title
  
  Scientific Reports
  
  Volume: 11 Issue: 1
- DOI
  10.1038/s41598-021-00102-2
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K21082
[Journal Article] 東北大学グリーンネストICT LEDを用いたノイズに強い光無線通信技術の研究~ 真夏の直射日光下において毎秒1ギガビット以上の通信速度を実現~2021
- Author(s)
  小島一信, 秩父重英, 吉田悠来, 白岩雅輝, 菅野敦史, 山本直克, 淡路祥成, 平野光, 長澤陽祐, 一本松正道
- Journal Title
  
  電波技術協会報FORN
  
  Volume: 342
- Data Source
  KAKENHI-PROJECT-19H02145
[Journal Article] Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy2020
- Author(s)
  A. Uedono, M. Dickmann, W. Egger, C. Hugenschmidt, S. Ishibashi, and S. F. Chichibu
- Journal Title
  
  Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), Gallium Nitride Materials and Devices XV, Edited by H. Fujioka, H. Morkoc, and U. T. Schwarz
  
  Volume: 11280 Pages: 11-11
- DOI
  10.1117/12.2541518
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Temperature dependence of internal quantum efficiency of radiation for the near-band-edge emission of GaN crystals quantified by omnidirectional photoluminescence spectroscopy2020
- Author(s)
  K. Kojima, K. Ikemura, and S. F. Chichibu
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 (10) Issue: 10 Pages: 1055041-4
- DOI
  10.35848/1882-0786/abb788
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals2020
- Author(s)
  K. Kojima, F. Horikiri, Y. Narita, T. Yoshida, H. Fujikura, and S. F. Chichibu
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 (1) Issue: 1 Pages: 0120041-4
- DOI
  10.7567/1882-0786/ab5adc
- NAID
  210000157633
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H04809, KAKENHI-PROJECT-18K19028
[Journal Article] Self-organized micro-light-emitting diode structure for high-speed solar-blind optical wireless communications2020
- Author(s)
  K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 (3) Issue: 3 Pages: 0311031-4
- DOI
  10.1063/5.0013112
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-19H02145
[Journal Article] Correlation between the internal quantum efficiency and photoluminescence lifetime of the near-band-edge emission in a ZnO single crystal grown by the hydrothermal method2020
- Author(s)
  K. Kojima and S. F. Chichibu
- Journal Title
  
  Applied Physical Express
  
  Volume: 13 (12) Issue: 12 Pages: 1210051-5
- DOI
  10.35848/1882-0786/abcd73
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors2020
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
- Journal Title
  
  Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), Gallium Nitride Materials and Devices XV, Edited by H. Fujioka, H. Morkoc, and U. T. Schwarz
  
  Volume: 11280 Pages: 10-10
- DOI
  10.1117/12.2545409
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Urbach-Martienssen tail as the origin of the two-peak structure in the photoluminescence spectra for the near-band-edge emission of a freestanding GaN crystal observed by omnidirectional photoluminescence spectroscopy2020
- Author(s)
  K. Kojima and S. F. Chichibu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 (17) Issue: 17 Pages: 1711031-5
- DOI
  10.1063/5.0028134
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors2020
- Author(s)
  S. F. Chichibu, Y. Ishikawa, K. Hazu, and K. Furusawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 (2) Issue: 2 Pages: 0205011-17
- DOI
  10.7567/1347-4065/ab5ef4
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H02907
[Journal Article] Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams2020
- Author(s)
  Akira Uedono, Kanako Shojiki, Kenjiro Uesugi, Shigefusa F Chichibu, Shoji Ishibashi, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Hideto Miyake
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 128 Issue: 8 Pages: 085704-085704
- DOI
  10.1063/5.0015225
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15025, KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] 窒化アルミニウムガリウム深紫外発光ダイオードを用いたギガビット級ソーラーブラインド光無線通信2020
- Author(s)
  小島一信，秩父重英，吉田悠来，白岩雅輝，淡路祥成，菅野敦史，山本直克，平野光
- Journal Title
  
  月刊OPTRONICS (６月号)
  
  Volume: 83 Pages: 1-6
- Data Source
  KAKENHI-PROJECT-19H02145
[Journal Article] Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN2020
- Author(s)
  Chichibu Shigefusa F.、Shima Kohei、Kojima Kazunobu、Kangawa Yoshihiro
- Journal Title
  
  Scientific Reports
  
  Volume: 10 Issue: 1 Pages: 185701-11
- DOI
  10.1038/s41598-020-75380-3
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PLANNED-16H06427
[Journal Article] Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams2019
- Author(s)
  Uedono Akira、Iguchi Hiroko、Narita Tetsuo、Kataoka Keita、Egger Werner、Koschine T?njes、Hugenschmidt Christoph、Dickmann Marcel、Shima Kohei、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
- Journal Title
  
  physica status solidi (b)
  
  Volume: 256 Issue: 10 Pages: 1900104-1900104
- DOI
  10.1002/pssb.201900104
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes2019
- Author(s)
  K. Shima, K. Kojima, A. Uedono, and S. F. Chichibu
- Journal Title
  
  Proceedings of IWJT2019: IEEE Xplore Digital Library
  
  Volume: none Pages: 1-4
- DOI
  10.23919/iwjt.2019.8802886
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Internal quantum efficiency of radiation in a bulk CH3NH3PbBr3 perovskite crystal quantified by using the omnidirectional photoluminescence spectroscopy2019
- Author(s)
  K. Kojima, K. Ikemura, K. Matsumori, Y. Yamada, Y. Kanemitsu, and S. F. Chichibu
- Journal Title
  
  APL Materials
  
  Volume: 7 Issue: 7 Pages: 0711161-6
- DOI
  10.1063/1.5110652
- NAID
  120006712292
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H02907, KAKENHI-PROJECT-17H04809
[Journal Article] Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere2019
- Author(s)
  K. Kojima, K. Ikemura, and S. F. Chichibu
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 (6) Issue: 6 Pages: 0620101-4
- DOI
  10.7567/1882-0786/ab2165
- NAID
  210000156009
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H04809, KAKENHI-PROJECT-18K19028
[Journal Article] Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures2019
- Author(s)
  Chichibu Shigefusa F.、Shima Kohei、Kojima Kazunobu、Takashima Shin-ya、Ueno Katsunori、Edo Masaharu、Iguchi Hiroko、Narita Tetsuo、Kataoka Keita、Ishibashi Shoji、Uedono Akira
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC0802-SC0802
- DOI
  10.7567/1347-4065/ab0d06
- NAID
  210000156122
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps2019
- Author(s)
  K. Kojima, Y. Nagasawa, A. Hirano, M. Ippommatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 114 Issue: 1 Pages: 0111021-5
- DOI
  10.1063/1.5063735
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H02907, KAKENHI-PROJECT-17H04809
[Journal Article] In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film2019
- Author(s)
  S. F. Chichibu, K. Kojima, K. Hazu, Y. Ishikawa, K. Furusawa, S. Mita, R. Collazo, Z. Sitar, and A. Uedono
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 (15) Issue: 15 Pages: 1519031-5
- DOI
  10.1063/1.5116900
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H02907
[Journal Article] Nearly temperature-independent ultraviolet light emission intensity of indirect excitons in hexagonal BN microcrystals2018
- Author(s)
  Chichibu Shigefusa F.、Ishikawa Youichi、Kominami Hiroko、Hara Kazuhiko
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 6 Pages: 065104-065104
- DOI
  10.1063/1.5021788
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H02907, KAKENHI-PROJECT-16K14222
[Journal Article] The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN2018
- Author(s)
  Chichibu S. F.、Uedono A.、Kojima K.、Ikeda H.、Fujito K.、Takashima S.、Edo M.、Ueno K.、Ishibashi S.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 123 Issue: 16 Pages: 161413-161413
- DOI
  10.1063/1.5012994
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H02907, KAKENHI-PLANNED-16H06424, KAKENHI-PROJECT-17H04809
[Journal Article] Room-temperature photoluminescence lifetime for the near-band-edge emission of (000-1) p-type GaN fabricated by sequential ion-implantation of Mg and H2018
- Author(s)
  Shima K.、Iguchi H.、Narita T.、Kataoka K.、Kojima K.、Uedono A.、Chichibu S. F.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 19 Pages: 191901-191901
- DOI
  10.1063/1.5050967
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H04809
[Journal Article] Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate2018
- Author(s)
  Chichibu S. F.、Shima K.、Kojima K.、Takashima S.、Edo M.、Ueno K.、Ishibashi S.、Uedono A.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Issue: 21 Pages: 211901-211901
- DOI
  10.1063/1.5030645
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlxGa1-xN multiple quantum wells2017
- Author(s)
  K. Kojima, K. Furusawa, Y. Yamazaki, H. Miyake, K. Hiramatsu, and S. F. Chichibu
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 1 Pages: 0158021-4
- DOI
  10.7567/apex.10.015802
- NAID
  210000135740
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-26706003, KAKENHI-PLANNED-16H06415
[Journal Article] Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate2017
- Author(s)
  Kazunobu Kojima;Shinya Takashima;Masaharu Edo;Katsunori Ueno;Mitsuaki Shimizu;Tokio Takahashi;Shoji Ishibashi;Akira Uedono;Shigefusa F. Chichibu
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 6 Pages: 0610021-4
- DOI
  10.7567/apex.10.061002
- NAID
  210000135863
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Defect-resistant radiative performance of m-plane immiscible Al1-xInxN epitaxial nanostructures for deep-ultraviolet and visible polarized-light emitters2017
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Journal Title
  
  Advanced Materials
  
  Volume: 29 Issue: 5 Pages: 16036441-9
- DOI
  10.1002/adma.201603644
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-15K13344
[Journal Article] Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals2017
- Author(s)
  Kojima Kazunobu、Ikeda Hirotaka、Fujito Kenji、Chichibu Shigefusa F.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 3 Pages: 032111-032111
- DOI
  10.1063/1.4995398
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-17H04809
[Journal Article] Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer2017
- Author(s)
  H. Nakai, M. Sugiyama, S. F. Chichibu
- Journal Title
  
  Applied Physics Letter
  
  Volume: 110 Issue: 18 Pages: 181102-181102
- DOI
  10.1063/1.4982653
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06274, KAKENHI-PLANNED-16H06427
[Journal Article] Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate2017
- Author(s)
  K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, A. Uedono,S. F. Chichibu
- Journal Title
  
  Applied Physics Express
  
  Volume: 11
- NAID
  210000135863
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams2017
- Author(s)
  Uedono Akira、Takashima Shinya、Edo Masaharu、Ueno Katsunori、Matsuyama Hideaki、Egger Werner、Koschine Tonjes、Hugenschmidt Christoph、Dickmann Marcel、Kojima Kazunobu、Chichibu Shigefusa F.、Ishibashi Shoji
- Journal Title
  
  Phys. Stat. Sol. B
  
  Volume: 2017 Issue: 4 Pages: 1700521-1700521
- DOI
  10.1002/pssb.201700521
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
[Journal Article] Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting　NiO film deposited on an n-type GaN homoepitaxial layer2017
- Author(s)
  H. Nakai, M. Sugiyama, and S. F. Chichibu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 印刷中
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06427
[Journal Article] Spectroscopic ellipsometry studies on the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate2016
- Author(s)
  K. Kojima, D. Kagaya, Y. Yamazaki, H. Ikeda, K. Fujito, and S. F. Chichibu
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 5S Pages: 05FG04-05FG04
- DOI
  10.7567/jjap.55.05fg04
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13344
[Journal Article] Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements2013
- Author(s)
  S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, A. Uedono, S. Mita, J. Xie, R. Collazo, and Z. Sitar
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 14 Pages: 1421031-5
- DOI
  10.1063/1.4823826
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: 50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: Vol. 50, No.42 Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656206
[Journal Article] Electronic Structure and Spontaneous Polarization in ScxAlyGa1-x-yN Alloys Lattice-Matched to GaN: A First-Principles Study2013
- Author(s)
  K. Shimada, S. F. Chichibu, M. Hata, H. Sazawa, T. Takada, and T. Sota
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JM04-08JM04
- DOI
  10.7567/jjap.52.08jm04
- NAID
  210000142746
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu,K. Hiramatsu, A. Uedono
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 113 Issue: 21 Pages: 2135061-6
- DOI
  10.1063/1.4807906
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-24560010
[Journal Article] Impacts ofSi-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al_<0.6>Ga_<0.4>N films grown on AlN templates by metalorganic vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu, K. Hiramatsu, and A. Uedono
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vo. 113
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656206
[Journal Article] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu, K. Hiramatsu, and A. Uedono
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol.113,No.21 Pages: 2135061-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun2013
- Author(s)
  K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 103 Issue: 5 Pages: 0521081-4
- DOI
  10.1063/1.4817297
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-24760250
[Journal Article] Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys2013
- Author(s)
  S. F. Chichibu, T. Onuma, K. Hazu, and A. Uedono
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 10 Issue: 3 Pages: 501-506
- DOI
  10.1002/pssc.201200676
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-23656206, KAKENHI-PROJECT-23760021
[Journal Article] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2013
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, A. Uedono
- Journal Title
  
  Electrochemical Society Transactions
  
  Volume: 50 Issue: 42 Pages: 1-8
- DOI
  10.1149/05042.0001ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Structural, elastic, and polarization parameters and band structures of wurtzite ZnO and MgO2012
- Author(s)
  S. -H. Jang and S. F. Chichibu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol.112,No.7 Pages: 0735031-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Signatures of Γ1-Γ5 mixed-mode polaritons in polarized reflectance spectra of ZnO2012
- Author(s)
  A. Takagi, A. Nakamura, A. Yoshikaie, S. Yoshioka, S. Adachi, S. F. Chichibu, and T. Sota
- Journal Title
  
  Journal of Physics: Condensed Matter
  
  Volume: Vol.24,No.41 Pages: 4158011-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth2012
- Author(s)
  S. F. Chichibu, M. Kagaya, P. Corfdir, J. D. Ganiere, B. Deveaud-Pledran, N. Grandjean, S. Kubo, and K. Fujito
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: Vol. 27,024008 Issue: 2 Pages: 1-7
- DOI
  10.1088/0268-1242/27/2/024008
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656206
[Journal Article] Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique2012
- Author(s)
  K. Hazu, S. F. Chichibu, S. Adachi, and T. Sota
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol.111,No.9 Pages: 0935221-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence2012
- Author(s)
  Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and S. F. Chichibu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 101 Issue: 21 Pages: 2121061-4
- DOI
  10.1063/1.4767357
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-23656206
[Journal Article] Structural, elastic, and polarization paremeters and band structures of wurtzite ZnO and MgO2012
- Author(s)
  S. -H. Jang and S. F. Chichibu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112 Issue: 7 Pages: 0735031-6
- DOI
  10.1063/1.4757023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Femtosecond-laser-driven photoelectron-gun for time-resolved cathodoluminescence measurement of GaN2012
- Author(s)
  T.Onuma, Y.Kagamitani, K.Hazu, T.Ishiguro, T.Fukuda, S.F.Chichibu
- Journal Title
  
  Review of Scientific Instruments
  
  Volume: 83 Issue: 4 Pages: 0439051-7
- DOI
  10.1063/1.3701368
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-23656206, KAKENHI-PROJECT-23760021
[Journal Article] Femtosecond-laser-driven photoelectron gun for time-resolved cathodoluminescence measurement of GaN2012
- Author(s)
  T. Onuma, Y. Kagamitani, K. Hazu, T. Ishiguro, T. Fukuda, and S. F. Chichibu
- Journal Title
  
  Review of Scientific Instruments
  
  Volume: Vol.83,No.4 Pages: 0439051-7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam2012
- Author(s)
  A.Uedono, S.Ishibashi, K.Tenjinbayashi, T.Tsutsui, K.Nakahara, D.Takamizu, S.F.Chichibu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 111 Issue: 1 Pages: 0145081-6
- DOI
  10.1063/1.3675516
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Signatures of Γ1－Γ5 mixed-mode polaritons in polarized reflectance spectra of ZnO2012
- Author(s)
  A. Takagi, A. Nakamura, A. Yoshikaie, S. Yoshioka, S. Adachi, S. F. Chichibu, and T. Sota
- Journal Title
  
  Journal of Physics: Condensed Matter
  
  Volume: 24 Issue: 41 Pages: 4158011-8
- DOI
  10.1088/0953-8984/24/41/415801
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-22310063, KAKENHI-PROJECT-24654079
[Journal Article] Helicon-wave-excited- plasma sputtering epitaxy of Nb-doped Ti0-2 films on GaN2011
- Author(s)
  A.N.Fouda, K.Hazu, T.Nakayama, A.Tanaka, S.F.Chichibu
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 8 Pages: 534-536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Time-resolved photoluminescence of a two-dimensional electron gas in an Al_<0.2>Ga_<0.8>N/GaN heterostructure fabricated on ammonothermal GaN substrates2011
- Author(s)
  Chichibu, et al.
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Major impacts of point defects and impurities on the carrier recombination dynamics in AlN2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, A.Uedono
- Journal Title
  
  Appl.Phys.Lett. 97
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] ワイドバンドギャップ半導体の新機能出現と時間空間分解分光計測2011
- Author(s)
  秩父重英, 羽豆耕治
- Journal Title
  
  マテリアルインテグレーション(特集)
  
  Volume: 24 Pages: 273-276
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Spontaneous polarization and band gap bowing in Y_xAl_yGa_<1-x-y>N alloys lattice-matched to GaN2011
- Author(s)
  K.Shimada, A.Zenpuku, K.Fujiwara, K.Hazu, S.F.Chichibu, M.Hata, H.Sazawa, T.Takada, T.Sota
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 100 Issue: 7 Pages: 0741141-5
- DOI
  10.1063/1.3651154
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Time-resolved photoluminescence of a two-dimensional electron gas in an Al_<0.2>Ga_<0.8>N/GaN heterostructure fabricated on ammonothermal GaN substrates2011
- Author(s)
  S.F.Chichibu, K.Hazu, Y.Kagamitani, T.Onuma, D.Ehrentraut, T.Fukuda, T.Ishiguro
- Journal Title
  
  Applied Physics Express 4
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Collateral evidence for an excellent radiative performance of Al_xGa_<1-x>N alloy films of high AlN mole fractions2011
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, A.Uedono
- Journal Title
  
  Applied Physics Letters
  
  Volume: 99 Issue: 5 Pages: 0519021-3
- DOI
  10.1063/1.3615681
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-23656206, KAKENHI-PROJECT-23760021
[Journal Article] ワイドバンドギャップ半導体の新機能出現と時間空間分解分光計測2011
- Author(s)
  秩父重英,羽豆耕治
- Journal Title
  
  マテリアルインテグレーション (特集)
  
  Volume: 24 Pages: 273-276
- Data Source
  KAKENHI-PROJECT-23656206
[Journal Article] Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (10-1-1) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy2010
- Author(s)
  T.Onuma, A.Uedono, H.Asamizu, H.Sato, J.F.Kaeding, M.Iza, S.P.DenBaars, S.Nakamura, S.F.Chichibu
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Transparent semi-conducting Nb-doped anatase Ti0_2 films deposited by helicon-wave-excited-plasma sputtering2010
- Author(s)
  A.Fouda, K.Hazu, M.Haemori, T.Nakayama, A.Tanaka, S.F.Chichibu
- Journal Title
  
  Journal of Vacuum Science and Technology B
  
  Volume: 29 Pages: 110171-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-doped Ti0_2 Films on a GaN Template by the Helicon-Wave-Excited- Plasma Sputtering Epitaxy Method2010
- Author(s)
  K.Hazu, A.Fouda, T.Nakayama, A.Tanaka, S.F.Chichibu
- Journal Title
  
  Applied Physics Express
  
  Volume: 3 Pages: 911021-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Identification of extremely radiative nature of AlN by time-resolved photoluminescence2010
- Author(s)
  T.Onuma, K.Hazu, A.Uedono, T.Sota, S.F.Chichibu
- Journal Title
  
  Appl.Phys.Lett. 96
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Surface stoichiometry and activity control for atomically smooth low dislocation density ZnO and pseudomorphic MgZnO epitaxy on a Zn-polar ZnO substrate by the helicon-wave-excited-plasma sputtering epitaxy method2010
- Author(s)
  Y. Sawai, H. Hazu, and S. F. Chichibu
- Journal Title
  
  Journal of Applied Physics
  
  Volume: Vol.108,No.6 Pages: 0635411-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246037
[Journal Article] Major impacts of point defects and impurities on the carrier recombination dynamics in AlN2010
- Author(s)
  S.F.Chichibu, et al.
- Journal Title
  
  Appl.Phys.Lett.
  
  Volume: 97
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2009
- Author(s)
  T.Onuma, T.Shibata, K.Kosaka, K.Asai, S.Sumiya, M.Tanaka, T.Sota, A.Uedono, S.F.Chichibu
- Journal Title
  
  J.App.Phys. 105
- NAID
  120002338505
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Ga-doped ZnO transparent conducting films prepared by helicon-wave-excited plasma sputtering2009
- Author(s)
  S. Masaki, H. Nakanishi, M. Sugiyama, S. F. Chichibu
- Journal Title
  
  Physica Status Solidi (c) Vol. 6
  
  Pages: 1109-1111
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360137
[Journal Article] Fabrication of a n-type ZnO/p-type Cu-Al-O heterojunction diode by sputtering deposition methods2009
- Author(s)
  S. Takahata, K. Saiki, T. Imao, H. Nakanishi, M. Sugiyama, S. F. Chichibu
- Journal Title
  
  Physica Status Solidi (c) Vol. 6
  
  Pages: 1105-1108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360137
[Journal Article] Nonpolar and Semipolar Group III Nitride-Based Materials2009
- Author(s)
  J.S.Speck, S.F.Chichibu
- Journal Title
  
  MRS Bulletin
  
  Volume: 34 Pages: 304-309
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] III族窒化物半導体(Al, Ga)Nにおける発光特性と点欠陥の相関関係2009
- Author(s)
  秩父重英, 上殿明良
- Journal Title
  
  日本結晶成長学会誌(総合報告)
  
  Volume: 36 Pages: 166-177
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films2009
- Author(s)
  H. Amaike, K. Hazu, Y. Sawai, S. F. Chichibu
- Journal Title
  
  Applied Physics Express Vol. 2, No. 10
  
  Pages: 1055031-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360137
[Journal Article] Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2009
- Author(s)
  T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, T. Sota, A. Uedono and S. F. Chichibu
- Journal Title
  
  J. App. Phys 105
- NAID
  120002338505
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] ZnO系半導体の発光寿命と結晶欠陥の関係2008
- Author(s)
  秩父重英
- Journal Title
  
  第42回応用物理学会スクール(2008年春季)「ZnO系半導体の結晶成長、デバイスの基礎」テキスト
  
  Pages: 71-81
- Data Source
  KAKENHI-PROJECT-19360137
[Journal Article] Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy2008
- Author(s)
  秩父重英
- Journal Title
  
  Appl. Phys. Lett 93
- NAID
  120002338447
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metalorganic vapor phase epitaxy on low defect density free-standing GaN substrates2008
- Author(s)
  秩父重英
- Journal Title
  
  Appl. Phys. Lett. 93
- NAID
  120002338439
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metalorganic vapor phase epitaxy on low defect density free-standing GaN substrates2008
- Author(s)
  S.F.Chichibu
- Journal Title
  
  Applied Physics Letters 92
  
  Pages: 0919121-3
- NAID
  120002338439
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Recombination dynamics of excitons in Mg0.11Zn0.890 alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beamepitaxy2007
- Author(s)
  M.Kubota, T.Onuma, A.Tsukazaki, A.Ohtomo, M.Kawasaki, T.Sota, S.F.Chichibu
- Journal Title
  
  Applied Physics Letters 90
  
  Pages: 1-3
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Recombination dynamics of excitons in Mg_<0.11> Zn_<0.89>O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy2007
- Author(s)
  M.Kubota, T.Onuma, A.Tsukazaki, A.Ohtomo, M.Kawasaki, T.Sota, S.F.Chichibu
- Journal Title
  
  Applied Physics Letters 90 (14)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007
- Author(s)
  S.F.Chichibu
- Journal Title
  
  Philosophical Magazine 87
  
  Pages: 2019-2039
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Growth of single-phase CuInGaSe_2 photoabsorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source2007
- Author(s)
  M.Sugiyama, A.Kinoshita, M.Fukaya, H.Nakanishi, S.F.Chichibu
- Journal Title
  
  Thin Solid Films 515
  
  Pages: 5867-5870
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. Denbaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han and T. Sot
- Journal Title
  
  Philosophical Magazine 87
  
  Pages: 2019-2039
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Recombination dynamics of excitons in MgO. 11ZnO. 890 alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy2007
- Author(s)
  M.Kubota, T.Onuma, A.Tsukazaki, A.Ohtomo, M.Kawasaki, T.Sota, S.F.Chichibu
- Journal Title
  
  Applied Physics Letters 90
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Growth of single-phase CuInGaSe_2 photoabsorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source2007
- Author(s)
  M.Sugiyama, A.Kinoshita, M.Fukaya, H.Nakanishi, S.F.Chichibu
- Journal Title
  
  Thin Solid Films 515 (15)
  
  Pages: 5867-5870
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Growth of single-phase CuInGaSe_2 photoabsorbing alloy films by the selenization method using diethylselenide as a less-hazardous Se source2007
- Author(s)
  M.Sugiyama, A.Kinoshita, M.Fukaya, H.Nakanishi, S.F.Chichibu
- Journal Title
  
  Thin Solid Films on-line
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Impacts f dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonotheramal method2007
- Author(s)
  S.F.chichibu
- Journal Title
  
  Applied Physics Letters 91
  
  Pages: 2519111-3
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Origin of localized excitations in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation Techniques2007
- Author(s)
  S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.Denbaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, T.Sota
- Journal Title
  
  Philosophical Magazine 87
  
  Pages: 2019-2039
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069001
[Journal Article] Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a-plane sapphire2007
- Author(s)
  T. Koyama, N. Shibata, A. N. Fouda, S. F. Chichibu
- Journal Title
  
  Journal of Applied Physics Vol. 102
  
  Pages: 0735051-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360137
[Journal Article] Preparation of High Ga-content CuInGaSe_2 Films by Selenization of Metal Precursors Using Diethylselenide as a Less-Hazardous Source2006
- Author(s)
  A.Kinoshita, M.Fukaya, H.Nakanishi, M.Sugiyama, S.F.Chichibu
- Journal Title
  
  Physica Status Solidi (c) 3(8)
  
  Pages: 2539-2542
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Use of Diethylselenide for the Preparation of CuInGaSe_2 Films by Selenization of Metal Precursors Premixed with Se2006
- Author(s)
  M.Sugiyama, F.B.Dejene, A.Kinoshita, M.Fukaya, V.Alberts, H.Nakanishi, S.F.Chichibu
- Journal Title
  
  Physica Status Solidi (c) 3(8)
  
  Pages: 2543-2546
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects2006
- Author(s)
  S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukuazaki, A.Ohtomo, M.Kawasaki
- Journal Title
  
  Journal of Applied Physics 99 (9)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Preparation of High Ga-content CuInGaSe_2 Films by Selenization of Metal Precursors Using Diethylselenide as a Less-Hazardous Source2006
- Author(s)
  A.Kinoshita, M.Fukaya, H.Nakanishi, M.Sugiyama, S.F.Chichibu
- Journal Title
  
  Physica Status Solidi (c) 3 (8)
  
  Pages: 2539-2542
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Helicon-wave-excited Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films2006
- Author(s)
  M.Sugiyama, A.Murayama, T.Imao, K.Saiki, H.Nakanishi, S.F.Chichibu
- Journal Title
  
  Physica Status Solidi (a) 203(11)
  
  Pages: 2882-2886
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] The use of diethylselenide as a less-hazardous source in CuInGaSe_2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se2006
- Author(s)
  M.Sugiyama, F.B.Dejene, A.Kinoshita, M.Fukaya, Y.Maru, T.Nakagawa, H.Nakanishi, V.Alberts, S.F.Chichibu
- Journal Title
  
  Journal of Crystal Growth 294 (2)
  
  Pages: 214-217
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] The use of diethylselenide as a less-hazardous source in CuInGaSe_2 photoabsorbing alloy formation by selenization of metal precursors premixed with Se2006
- Author(s)
  M.Sugiyama, F.B.Dejene, A.Kinoshita, M.Fukaya, Y.Maru, T.Nakagawa, H.Nakanishi, V.Alberts, S.F.Chichibu
- Journal Title
  
  Journal of Crystal Growth 294(2)
  
  Pages: 214-217
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Dielectric SiO_2/ZrO_2 distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method2006
- Author(s)
  S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama
- Journal Title
  
  Applied Physics Letters 88 (16)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Helicon-wave-excited Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films2006
- Author(s)
  M.Sugiyama, A.Murayama, T.Imao, K.Saiki, H.Nakanishi, S.F.Chichibu
- Journal Title
  
  Physica Status Solidi (a) 203 (11)
  
  Pages: 2882-2886
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Use of Diethylselenide for the Preparation of CuInGaSe_2 Films by Selenization of Metal Precursors Premixed with Se2006
- Author(s)
  M.Sugiyama, F.B.Dejene, A.Kinoshita, M.Fukaya, V.Alberts, H.Nakanishi, S.F.Chichibu
- Journal Title
  
  Physica Status Solidi (c) 3 (8)
  
  Pages: 2543-2546
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Helicon-Wave-Excited-Plasma Sputtering Deposition of Ga-doped ZnO Transparent Conducting Films for CIS-based Solar Cell Application2006
- Author(s)
  A.Murayama, T.Imao, K.Saiki, H.Nakanishi, M.Sugiyama, S.Chichibu
- Journal Title
  
  Abstracts Book of International Conference on Ternary and Multinary Componds 15
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Dielectric SiO_2/ZrO_2 distributed Bragg reflectors for ZnO microcavities prepared by the reactive helicon-wave-excited-plasma sputtering method2006
- Author(s)
  S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama
- Journal Title
  
  Applied Physics Letters 88(16)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects2006
- Author(s)
  S.F.Chichibu, T.Onuma, M.Kubota, A.Uedono, T.Sota, A.Tsukuazaki, A.Ohtomo, M.Kawasaki
- Journal Title
  
  Journal of Applied Physics 99(9)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Fabrication of p-CuGaS_2/n-ZnO : Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods2005
- Author(s)
  S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, T.Onuma
- Journal Title
  
  Journal of Physics and Chemistry of Solids 66 (11)
  
  Pages: 1868-1871
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Fabrication of p-CuGaS_2 /n-ZnO : Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods2005
- Author(s)
  S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, T.Onuma
- Journal Title
  
  Journal of Physics and Chemistry of Solids 66(11)
  
  Pages: 1868-1871
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005
- Author(s)
  Chichibu, Uedono, Tsukazaki, Onuma, Zamfirescu, Ohtomo, Kavokin, Cantwell, Litton, Sota, Kawasaki
- Journal Title
  
  Semiconductor Science and Technology (4月出版)
- Data Source
  KAKENHI-PROJECT-15656080
[Journal Article] Vacancy-type defects in wide-gap semiconductors probed by positron annihilation2005
- Author(s)
  A.Uedono, S.F.Chichibu
- Journal Title
  
  Extended Abstracts of 24th Electronic Materials Symposium 24
  
  Pages: 333-334
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Fabrication of p-CuGaS_2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods2005
- Author(s)
  S.F.Chichibu, T.Ohmori, N.Shibata, Y.Koyama, T.Onuma
- Journal Title
  
  Journal of Physics and Chemistry of Solids 66(11)
  
  Pages: 1868-1871
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Exciton-polariton spectra and limiting factors for the room temperature photoluminescence efficiency in ZnO2005
- Author(s)
  Chichibu, Uedono, Tsukazaki, Onuma, Zamfirescu, Ohtomo, Kavokin, Cantwell, Litton, Sota, Kawasaki
- Journal Title
  
  Semiconductor Science and Technology (4月出版)
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005
- Author(s)
  S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, M.Kawasaki
- Journal Title
  
  Semiconductor Science and Technology 20
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Exeiton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO2005
- Author(s)
  S.F.Chichibu, A.Uedono, A.Tsukazaki, T.Onuma, M.Zamfirescu, A.Ohtomo, A.Kavokin, G.Cantwell, C.W.Litton, T.Sota, M.Kawasaki
- Journal Title
  
  Semiconductor Science and Technology 20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Importance of lattice-matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO2004
- Author(s)
  T.Koyama, S.F.Chichibu
- Journal Title
  
  Journal of Applied Physics 95(12)
  
  Pages: 7856-7861
- Data Source
  KAKENHI-PROJECT-15656080
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.Yoo T.Chikyow, T.Sota,, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85(23)
  
  Pages: 5586-5588
- Data Source
  KAKENHI-PROJECT-15656080
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.-.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85 (23)
  
  Pages: 5586-5588
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.-Z.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85(23)
  
  Pages: 5586-5588
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] In situ monitoring of Zn* and Mg* species during helicon-wave-excited-plasma sputtering epitaxy of ZnO and Mg_<0.06>Zn_<0.94>O films2004
- Author(s)
  T.Koyama, T.Ohmori, N.Shibata, T., Onuma, S.F.Chichibu
- Journal Title
  
  Journal of Vacuum Science and Technology B 22(4)
  
  Pages: 2220-2225
- Data Source
  KAKENHI-PROJECT-15656080
[Journal Article] Improved surface morphology in GaN homoepitaxy by NH3-source molecular beam epitaxy2004
- Author(s)
  Koida, Onuma, Nakamura, Chichibu 他
- Journal Title
  
  Journal of Vacuum Science and Technology B 22(4)
  
  Pages: 2158-2164
- Data Source
  KAKENHI-PROJECT-15656080
[Journal Article] Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer2004
- Author(s)
  T.Onuma, S.F.Chichibu, A.Uedono, Y.Yoo, T.Chikyow, T.Sota, M.Kawasaki, H.Koinuma
- Journal Title
  
  Applied Physics Letters 85(23)
  
  Pages: 5586-5588
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector2004
- Author(s)
  S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, T.Onuma
- Journal Title
  
  Applied Physics Letters 85 (19)
  
  Pages: 4403-4405
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Greenish-white electroluminescence from p-type CuGaS_2 heterojunction diodes using n-type ZnO as an electron injector2004
- Author(s)
  S.F.Chichibu, T.Ohmori, N.Shibata, T.Koyama, T.Onuma
- Journal Title
  
  Applied Physics Letters 85(19)
  
  Pages: 4403-4405
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360146
[Journal Article] Radiative and nonradiative excitonic transitions in nonpolar (11-20) and polar (000-1) and (0001) ZnO epilayers2004
- Author(s)
  T.Koida, SF.Chichibu, A.Uedono, T.Sota, A.Tsukazaki, M.Kawasaki
- Journal Title
  
  Applied Physics Letters 84(7)
  
  Pages: 1079-1081
- Data Source
  KAKENHI-PROJECT-15656080
[Journal Article] Investigation of direct and indirect band gaps of [100]-oriented nearly strain-free β-FeSi_2 films grown by molecular-beam epitaxy.2002
- Author(s)
  K.Takakura, N.Hiroi, T.Suemasu, S.F.Chichibu, F.Hasegawa
- Journal Title
  
  Applied Physics Letters Vol.80, No.4
  
  Pages: 556-558
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12450137
[Patent] 積層体およびその製造方法、それを用いた機能素子2010
- Inventor(s)
  秩父重英, 羽豆耕治, 中山徳行, 田中明和
- Industrial Property Rights Holder
  秩父重英, 羽豆耕治, 中山徳行, 田中明和
- Industrial Property Number
  2010-045920
- Filing Date
  2010-03-02
- Data Source
  KAKENHI-PROJECT-19360137
[Patent] 積層体およびその製造方法、それを用いた機能素子2010
- Inventor(s)
  秩父重英, 羽豆耕治, 中山徳行, 田中明和
- Industrial Property Rights Holder
  東北大学・住友金属鉱山(株)
- Industrial Property Number
  2010-004592
- Filing Date
  2010-03-02
- Data Source
  KAKENHI-PROJECT-19360137
[Patent] 紫外線窒化物半導体発光素子およびその製造方法2008
- Inventor(s)
  秩父重英
- Industrial Property Rights Holder
  東北大学・三菱化学
- Industrial Property Number
  2008-219525
- Filing Date
  2008-08-28
- Data Source
  KAKENHI-PLANNED-18069001
[Patent] 紫外線窒化物半導体発光素子およびその製造方法2007
- Inventor(s)
  秩父重英,尾沼猛儀,小山享宏,宗田孝之,池田大勝
- Industrial Property Rights Holder
  東北大学・早稲田大学
- Industrial Property Number
  2007-297191
- Filing Date
  2007-11-15
- Data Source
  KAKENHI-PLANNED-18069001
[Patent] 紫外線窒化物半導体発光素子およびその製造方法2007
- Inventor(s)
  秩父, 重英・尾沼, 猛儀・小山, 享宏・宗田, 孝之・池田, 大勝
- Industrial Property Rights Holder
  東北大学・早稲田大学
- Filing Date
  2007-11-15
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 低圧酸性アモノサーマル成長GaNのミッドギャップ再結合過程2024
- Author(s)
  嶋紘平，上殿明良，石橋章司，石黒徹，秩父重英
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] GaN成長層・Mgイオン注入層の室温フォトルミネッセンス寿命 (II)2024
- Author(s)
  秩父重英，嶋紘平，上殿明良，石橋章司，田中亮，高島信也，上野勝典，江戸雅晴，渡邉浩崇，本田善央，須田淳，天野浩，加地徹，生田目俊秀，色川芳宏，小出康夫
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] GaN成長層・Mgイオン注入層の室温フォトルミネッセンス寿命 (III)2024
- Author(s)
  秩父重英，嶋紘平，上殿明良，石橋章司，田中亮，高島信也，上野勝典，江戸雅晴，渡邉浩崇，本田善央，須田淳，天野浩，加地徹，生田目俊秀，色川芳宏，小出康夫
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] BCl3/NH3を用いてサファイア基板上にCVD成長させたhBN薄膜および多形BNセグメントの陰極線蛍光評価2024
- Author(s)
  嶋紘平,粕谷拓生,髙屋竣大,辻谷陽仁,原和彦,秩父重英
- Organizer
  2024年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-23K17757
[Presentation] 炭素フリー原料を用いてサファイア基板上にCVD成長させたhBN薄膜の発光ダイナミクス2023
- Author(s)
  粕谷拓生,嶋紘平,原和彦,秩父重英
- Organizer
  2023年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-23K22786
[Presentation] Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures2023
- Author(s)
  S. F. Chichibu, K. Shima, H. Iguchi, T. Narita, K. Kataoka, H. Sakurai, M. Bockowski, J. Suda, T. Kachi, S. Takashima, R. Tanaka, K. Ueno, M. Edo, S. Ishibashi, and A. Uedono
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] 炭素フリー原料を用いてサファイア基板上にCVD成長させたhBN薄膜の間接遷移励起子の発光ダイナミクス2023
- Author(s)
  粕谷拓生, 嶋紘平, 梅原直己, 原和彦, 秩父重英
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K20993
[Presentation] Luminescence studies of Mg implanted and undoped GaN on GaN structures processed by ultra high pressure annealing2023
- Author(s)
  K. Shima, T. Narita, K. Kataoka, S. Ishibashi, A. Uedono, M. Bockowski, J. Suda, T. Kachi, and S. F. Chichibu
- Organizer
  14th Int. Conf. Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] 陰極線励起による単層六方晶BNのバンド端発光の観測2023
- Author(s)
  嶋紘平, Tin S. Cheng, Christopher J. Mellor, Peter H. Benton, Christine Elias, Bernard Gil, Guillaume Cassabois, Sergei V. Novikov, 秩父重英
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K20993
[Presentation] Spatially resolved cathodoluminescence studies of graphitic BN segments formed in hexagonal BN epilayers grown on a (0001) sapphire by CVD2023
- Author(s)
  S. F. Chichibu, N. Umehara, K. Hara, and K. Shima
- Organizer
  The 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov.12-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K17757
[Presentation] Effect on QWs Qualities of Thickness of Homoepitaxial AlN on AlN/sapphire Prepared by Sputtering and High temperature Annealing2023
- Author(s)
  R. Akaike, K. Uesugi, K. Shima, S. F. Chichibu, A. Uedono, and H. Miyake
- Organizer
  14th Int. Conf. Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] Ultraviolet luminescence dynamics of hexagonal BN epilayers grown by chemical vapor deposition using carbon-free precursors2023
- Author(s)
  T. Kasuya, K. Shima, K. Hara, and S. F. Chichibu
- Organizer
  65th Electronic Materials Conference (EMC2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K20993
[Presentation] Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam2023
- Author(s)
  A. Uedono, H. Sakurai, J. Uzuhashi, T. Narita, K. Sierakowski, S. Ishibashi, S. F. Chichibu, M. Bockowski, and J. Suda
- Organizer
  SPIE Photonics West
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N2023
- Author(s)
  K. Shima, R. Tanaka, S. Takashima, K. Ueno, M. Edo, A. Uedono, S. Ishibashi, and S. F. Chichibu
- Organizer
  21th Int. Workshop on Junction Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] 炭素フリー原料を用いてサファイア基板にCVD成長させたhBN薄膜に混在する多形BNの空間分解カソードルミネッセンス評価2023
- Author(s)
  秩父重英,梅原直己,原和彦,嶋紘平
- Organizer
  2023年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-23K17757
[Presentation] 陰極線励起による単層六方晶BNのバンド端発光の観測2023
- Author(s)
  嶋紘平,T.S.Cheng,C.J.Mellor,P.H.Beton,C.Elias,B.Gil,G.Cassabois,S.V.Novikov,秩父重英
- Organizer
  2023年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-23K22786
[Presentation] Ultraviolet luminescence dynamics of hexagonal BN epilayers grown by chemical vapor deposition using carbon-free precursors2023
- Author(s)
  T. Kasuya, K. Shima, K. Hara, and S. F. Chichibu
- Organizer
  65th Electronic Materials Conference (EMC-65)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22786
[Presentation] Impacts of vacancy clusters on the luminescence dynamics in Mg implanted GaN on GaN structures2023
- Author(s)
  S. F. Chichibu, A. Uedono, H. Iguchi, T. Narita, K. Kataoka, M. Bockowski, J. Suda, T. Kachi, S. Takashima, R. Tanaka, K. Ueno, M. Edo, S. Ishibashi, and K. Shima
- Organizer
  14th Int. Conf. Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] Ultraviolet luminescence dynamics of hexagonal BN epilayers grown by chemical vapor deposition using carbon-free precursors2023
- Author(s)
  T. Kasuya, K. Shima, K. Hara, and S. F. Chichibu
- Organizer
  65th Electronic Materials Conference (EMC-65), University of California, Santa Barbara, California, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K17757
[Presentation] 炭素フリー原料を用いてサファイア基板にCVD成長させた多型を含むhBN薄膜における間接遷移励起子の発光ダイナミクス2022
- Author(s)
  秩父重英, 嶋紘平, 菊地清, 梅原直己, 瀧口佳祐, 石谷善博, 原和彦
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K20993
[Presentation] 空孔ガイドMg拡散法によるp型イオン注入GaNの空間分解CL評価2022
- Author(s)
  嶋紘平, 田中亮, 高島信也, 上野勝典, 江戸雅晴, 小島一信, 上殿明良, 秩父重英
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] 超高圧アニールによる Mgイオン注入 p型GaNのルミネッセンス評価2022
- Author(s)
  嶋紘平，櫻井秀樹，石橋章司，上殿明良，M. Bockowski，須田淳，加地徹，秩父重英
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] Emission dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors2022
- Author(s)
  S. F. Chichibu, K. Shima, K. Kikuchi, N. Umehara, K. Takiguchi, Y. Ishitani, and K. Hara
- Organizer
  International Workshop on Nitride Semiconductors 2022 (IWN2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K20993
[Presentation] Near-band-edge recombination in monolayer hBN epitaxial films studied using cathodoluminescence spectroscopy2022
- Author(s)
  K. Shima, C. Elias, T. S. Cheng, C. J. Mellor, P. H. Beton, S. V. Novikov, B. Gil, G. Cassabois, and S. F. Chichibu
- Organizer
  11th International Workshop on Nitride Semiconductors (IWN2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22786
[Presentation] Near-band-edge recombination in monolayer hBN epitaxial films studied using cathodoluminescence spectroscopy2022
- Author(s)
  K. Shima, C. Elias, T. S. Cheng, C. J. Mellor, P. H. Beton, S. V. Novikov, B. Gil, G. Cassabois, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2022 (IWN2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K20993
[Presentation] 炭素フリー原料を用いてサファイア基板にCVD成長させた多型を含むhBN薄膜における間接遷移励起子の発光ダイナミクス2022
- Author(s)
  秩父重英,嶋紘平,菊地清,梅原直己,瀧口佳祐,石谷善博,原和彦
- Organizer
  2022年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-23K22786
[Presentation] 第43回優秀論文賞受賞記念講演エピタキシャル成長及びイオン注入により作製されたGaN基板上Mg添加p型GaNの室温フォトルミネッセンス寿命2022
- Author(s)
  秩父重英，嶋紘平，小島一信，高島信也，上野勝典，江戸雅晴，井口紘子，成田哲生，片岡恵太，石橋章司，上殿明良
- Organizer
  応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] Emission dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by chemical vapor deposition using carbon-free precursors2022
- Author(s)
  S. F. Chichibu, K. Shima, N. Umehara, K. Takiguchi, Y. Ishitani, and K. Hara
- Organizer
  11th International Workshop on Nitride Semiconductors (IWN2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22786
[Presentation] 陽電子消滅を用いたMgイオン注入により形成したp型GaNのMg活性プロセスと空孔型欠陥の研究2022
- Author(s)
  上殿明良，田中亮，高島信也，上野勝典，江戸雅晴，嶋紘平，小島一信，秩父重英，石橋章司
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K21082
[Presentation] High-speed solar-blind optical wireless communication enabled by DUV LED2022
- Author(s)
  Yuki Yoshida, Kazunobu Kojima, Masaki Shiraiwa, Atsushi Kanno, Akira Hirano, Yosuke Nagasawa, Masamichi Ippommatsu, Naokatsu Yamamoto, Shigefusa F. Chichibu, and Yoshinari Awaji
- Organizer
  Photonics West 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] (Al,Ga,In)Nの輻射・非輻射再結合過程に点欠陥が及ぼす影響2021
- Author(s)
  秩父重英,嶋紘平,小島一信,上殿明良,石橋章司
- Organizer
  日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会　第121回研究会(第五期総括記念研究会)
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Striped and fin-shaped cation orderings and self-formed compositional superlattices in an m-plane Al0.7In0.3N on GaN heterostructure2021
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, and Y. Kangawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Characterization of AlGaN deep-ultraviolet light-emitting diodes grown on AlN/sapphire templates with dense macro-steps and its application of high-speed solar-blind optical wireless communications2021
- Author(s)
  K. Kojima, A. Hirano, Y. Nagasawa, Y. Honda, H. Amano, Y.Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, and S. F. Chichibu
- Organizer
  The International Conference on UV LED Technologies & Applications (ICULTA 2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] Macroscopically homogeneous cathodoluminescence mapping images of c-plane nearly lattice-matched Al1-xInxN films on a GaN substrate2021
- Author(s)
  L. Y. Li, K. Shima, M. Yamanaka, K. Kojima, T. Egawa, T. Takeuchi, M. Miyoshi, and S. F. Chichibu
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Vacancies in AlN deposited by radio-frequency sputtering and MOVPE studied by positron annihilation spectroscopy2021
- Author(s)
  A. Uedono, K. Shojiki, K. Uesugi, S. F. Chichibu, S. Ishibash, M. Dickmann, W. Egger, C. Hugenschmidt, and H. Miyake
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] AlN単結晶上にHVPE成長させたSi添加AlN基板の発光特性2021
- Author(s)
  秩父重英,嶋紘平,小島一信, B. Moody,三田清二,R. Collazo, Z. Sitar,熊谷義直,上殿明良
- Organizer
  2021年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Cathodoluminescence studies of AlN epilayers grown by MOVPE on sputtered AlN templates annealed at high temperature2021
- Author(s)
  K. Shima, T. Kasuya, K. Shojiki, K. Uesugi, K. Kojima, A. Uedono, H. Miyake, and S. F. Chichibu
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 陽電子消滅によるスパッタ堆積AlN薄膜中の空孔型欠陥検出2021
- Author(s)
  上殿明良,正直花奈子,上杉謙次郎,秩父重英,石橋章司,M. Dickmann, W. Egger, C. Hugenschmidt,三宅秀人
- Organizer
  2021年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] InGaN/GaN多重量子殻の時間空間分解カソードルミネッセンス評価2021
- Author(s)
  嶋紘平,Weifang Lu,小島一信,上山智,竹内哲也,秩父重英
- Organizer
  2021年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 格子整合系c面AlInN/GaNヘテロ構造のルミネッセンス評価2021
- Author(s)
  李リヤン,嶋紘平,山中瑞樹,小島一信,江川孝志,竹内哲也,三好実人,秩父重英
- Organizer
  2021年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 深紫外AlGaN LEDを用いたギガビット級ソーラーブラインド光無線通信2021
- Author(s)
  小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,平野光,長澤陽祐,一本松正道,秩父重英
- Organizer
  電子情報通信学会総合大会光エレクトロニクス（OPE）セッション
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Mgイオン注入後の空孔ガイド拡散法により形成したp型GaNのルミネッセンス評価2021
- Author(s)
  嶋紘平,田中亮,高島信也,上野勝典,江戸雅晴,小島一信,上殿明良,秩父重英
- Organizer
  2021年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 深紫外AlGaN LEDを用いたギガビット級ソーラーブラインド光無線通信2021
- Author(s)
  小島一信, 吉田悠来, 白岩雅輝, 淡路祥成, 菅野敦史, 山本直克, 平野光, 長澤陽祐, 一本松正道, 秩父重英
- Organizer
  電子情報通信学会総合大会 2021年3月
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] Self-formed compositional superlattices triggered by cation orderings in m-plane Al1-xInxN on GaN2021
- Author(s)
  S. F. Chichibu, K, Shima, K. Kojima, and Y. Kangawa
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Omnidirectional photoluminescence (ODPL) spectroscopy for the quantification of quantum efficiency of radiation in GaN crystals2021
- Author(s)
  K. Kojima and S. F. Chichibu
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Current progress of omnidirectional photoluminescence spectroscopy for the quantification of quantum efficiency of radiation in GaN crystals2021
- Author(s)
  K. Kojima, K. Ikemura, and S. F. Chichibu
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2021, OPTO, Gallium Nitride Materials and Devices XV (OE107)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 炭素フリー原料を用いてサファイア基板に気相成長させたh-BN薄膜の空間分解カソードルミネッセンス評価2021
- Author(s)
  秩父重英,嶋紘平,梅原直己,小島一信,原和彦
- Organizer
  2021年第82回応用物理学会秋季学術講演会[10p-N101-8]
- Data Source
  KAKENHI-PROJECT-20K20993
[Presentation] 低圧酸性アモノサーマル成長バルクGaN結晶のルミネッセンス評価2021
- Author(s)
  嶋紘平,栗本浩平,包全喜,三川豊,小島一信,石黒徹,秩父重英
- Organizer
  2021年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam2021
- Author(s)
  A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. F. Chichibu, and T. Kachi
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2021, OPTO, Gallium Nitride Materials and Devices XV (OE107)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Characterization of a self-organized deep-ultraviolet micro-light-emitting diode structure for high-speed solar-blind optical wireless communications2020
- Author(s)
  K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu
- Organizer
  Conference on Lasers and Electro-Optics (CLEO) 2020, Laser Science to Photonic Applications, Session Free-Space & Underwater Communication
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 時間空間分解カソードルミネッセンス法によるワイドバンドギャップ窒化物半導体の評価2020
- Author(s)
  秩父重英
- Organizer
  「放射線科学とその応用第186委員会」第36回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20K20993
[Presentation] 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(1)2020
- Author(s)
  嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
- Organizer
  2020年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 自己組織的に形成された深紫外マイクロ発光ダイオード構造の変調特性2020
- Author(s)
  小島一信、吉田悠来、白岩雅輝、淡路祥成、菅野敦史、山本直克、平野光、長澤陽祐、一本松正道、秩父重英
- Organizer
  レーザー学会第４０回年次大会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(3)-断面CL-2020
- Author(s)
  秩父重英,嶋紘平,小島一信
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(2)2020
- Author(s)
  粕谷拓生,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
- Organizer
  2020年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 全方位フォトルミネセンス計測：新しい評価技術2020
- Author(s)
  小島一信, 秩父重英
- Organizer
  日本学術振興会光電相互変換第125委員会第250回記念研究会「新しい光電変換材料・評価法」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(2)2020
- Author(s)
  中須大蔵,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(1)2020
- Author(s)
  嶋紘平,中須大蔵,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaNに格子整合するc面AlInN薄膜の空間分解カソードルミネッセンス2020
- Author(s)
  李リヤン,嶋紘平,山中瑞樹,小島一信,江川孝志,竹内哲也,三好実人,秩父重英
- Organizer
  2020年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 陽電子消滅法によるMgイオン注入GaNの空孔型欠陥の焼鈍特性及び欠陥によるキャリア捕獲の研究2020
- Author(s)
  上殿明良,高島信也,江戸雅晴,上野勝典,松山秀昭,Marcel Dickmann,Werner Egger,Christoph Hugenschmidt, 嶋紘平,小島一信,秩父重英,石橋章司
- Organizer
  応用物理学会先進パワー半導体分科会第7回個別討論会「GaN p 型イオン注入」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 陽電子を用いた超高圧焼鈍によるイオン注入GaNの欠陥回復特性の研究2020
- Author(s)
  上殿明良,櫻井秀樹,成田哲生,Sierakowski Kacper,Bockowski Michal,須田淳,石橋章司,嶋紘平,秩父重英,加地徹
- Organizer
  第49回結晶成長国内会議(JCCG-49), シンポジウム「窒化物半導体における不純物制御」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 時間空間分解カソードルミネッセンス法によるワイドバンドギャップ窒化物半導体の評価2020
- Author(s)
  秩父重英
- Organizer
  日本学術振興会放射線科学とその応用第186委員会第36回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 全方位フォトルミネセンス分光にて観測される双峰性スペクトルの起源2020
- Author(s)
  小島一信,秩父重英
- Organizer
  2020年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] スパッタAlN上にMOVPE成長させたAlN薄膜のカソードルミネッセンス評価2020
- Author(s)
  粕谷拓生,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会,「第12回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaN結晶の輻射量子効率に対して炭素不純物および非輻射再結合中心が及ぼす影響2020
- Author(s)
  小島一信,堀切文正,成田好伸,吉田丈洋,藤倉序章,秩父重英
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] PVT成長AlN上にHVPE成長させたSi添加AlN基板の陰極線蛍光評価2020
- Author(s)
  秩父重英,嶋紘平,小島一信,Baxter Moody,三田清二,Ramon Collazo,Zlatko Sitar,熊谷義直,上殿明良
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors2020
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2020, OPTO, Gallium Nitride Materials and Devices XV (OE107)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(2)2020
- Author(s)
  中須大蔵,嶋紘平,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] AlGaN LEDとBeyond 5G2020
- Author(s)
  吉田悠来，小島一信，白岩雅輝，菅野敦史，平野光，長澤陽祐，一本松正道，山本直克，秩父重英，淡路祥成
- Organizer
  応用物理学会　応用電子物性分科会応用電子物性分科会研究例会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] PVT成長AlN上にHVPE成長させたSi添加AlN基板の陰極線蛍光評価2020
- Author(s)
  秩父重英,嶋紘平,小島一信,Baxter Moody,三田清二,Ramon Collazo,Zlatko Sitar,熊谷義直,上殿明良
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(4)2020
- Author(s)
  秩父重英,嶋紘平,稲富悠也,小島一信,寒川義裕
- Organizer
  2020年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] c面エピタキシャルAl0.82In0.18N/GaN構造の空間分解カソードルミネッセンス2020
- Author(s)
  李リヤン,嶋紘平,山中瑞樹,小島一信,江川孝志,竹内哲也,三好実人,秩父重英
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会,「第12回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Characterization of a self-organized deep-ultraviolet micro-light-emitting diode structure for high-speed solar-blind optical wireless communications2020
- Author(s)
  K. Kojima, Y. Yoshida, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, A. Hirano, Y. Nagasawa, M. Ippommatsu, and S. F. Chichibu
- Organizer
  2020 Conference on Lasers and Electro-Optics (CLEO) (2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] Up-to 292-Mbps deep-UV communication over a diffuse-line-of-sight link based on silicon photo multiplier array2020
- Author(s)
  Y. Yoshida, K. Kojima, M. Shiraiwa, Y. Awaji, A. Kanno, N. Yamamoto, and S. F. Chichibu
- Organizer
  2020 European Conference on Optical Communication (ECOC) (2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] GaN結晶の輻射量子効率と炭素不純物濃度の相関2020
- Author(s)
  小島一信,堀切文正,成田好伸,吉田丈洋,藤倉序章,秩父重英
- Organizer
  2020年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 全方位フォトルミネッセンス(ODPL)分光法によるGaNウェハの発光量子効率マッピング評価2020
- Author(s)
  池村賢一郎,小島一信,秩父重英,堀切文正
- Organizer
  2020年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy2020
- Author(s)
  A. Uedono, M. Dickmann, W. Egger, C. Hugenschmidt, S. Ishibashi, and S. F. Chichibu
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2020, OPTO, Gallium Nitride Materials and Devices XV (OE107
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] AlNおよび高AlNモル分率AlGaN混晶におけるAl空孔複合体の役割2020
- Author(s)
  秩父重英,嶋紘平,小島一信,三宅秀人,上殿明良
- Organizer
  応用物理学会結晶工学分科会,応用電子物性分科会との連携研究例会「紫外材料・デバイス開発の最前線」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaNに格子整合するc面AlInN薄膜の空間分解陰極線ルミネッセンス2020
- Author(s)
  李リヤン,嶋紘平,山中瑞樹,小島一信,江川孝志,竹内哲也,三好実人,秩父重英
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(1)2020
- Author(s)
  嶋紘平,中須大蔵,正直花奈子,上杉謙次郎,小島一信,上殿明良,三宅秀人,秩父重英
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 深紫外AlGaN発光ダイオードとマルチピクセルフォトンカウンタを用いたソーラーブラインド帯モバイル光無線通信2020
- Author(s)
  小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,平野光,長澤陽祐,一本松正道,秩父重英
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(3)-断面CL-2020
- Author(s)
  秩父重英,嶋紘平,小島一信
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 深紫外AlGaN発光ダイオードの時間分解エレクトロルミネセンス分光2019
- Author(s)
  小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,平野光,長澤陽祐,一本松正道,秩父重英,
- Organizer
  2019年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] マクロステップを持つc面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の構造解析(1)2019
- Author(s)
  小島一信,長澤陽祐,平野光,一本松正道,本田善央,天野浩,赤崎勇,秩父重英,
- Organizer
  2019年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 全方位フォトルミネセンス（ODPL）法を用いた半導体結晶の光物性評価2019
- Author(s)
  小島一信,秩父重英
- Organizer
  ナノテスティング学会「第２５回Ｐ＆Ａ解析研究会」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 気相成長m面自立AlN基板およびホモエピタキシャル層の偏光特性と発光ダイナミクス2019
- Author(s)
  秩父重英,小島一信,羽豆耕治,石川陽一,古澤健太郎,三田清二,R.Collazo,Z.Sitar,上殿明良
- Organizer
  2019年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Dependences of external quantum efficiency of radiation and photoluminescence lifetime on the carbon concentration in GaN on GaN structures2019
- Author(s)
  K. Kojima, F. Horikiri, Y. Narita, T. Yoshida, and S. F. Chichibu
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 注入深さ・極性面の異なるMgイオン注入GaNのフォトルミネッセンス2019
- Author(s)
  秩父重英,嶋紘平,井口紘子,成田哲生,片岡恵太,小島一信,上殿明良
- Organizer
  2019年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] エピタキシャル成長およびイオン注入Mg添加GaN中の非輻射再結合中心2019
- Author(s)
  秩父重英,嶋紘平,小島一信,高島信也,上野勝典,江戸雅晴,井口紘子,成田哲生, 片岡恵太,石橋章司,上殿明良
- Organizer
  応用物理学会シリコンテクノロジー分科会接合研究委員会研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 全方位フォトルミネセンス（ODPL）法を用いた半導体結晶の光物性評価2019
- Author(s)
  小島一信,秩父重英
- Organizer
  ナノテスティング学会「第２５回Ｐ＆Ａ解析研究会」
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 窒化物半導体特異構造の時間空間分解カソードルミネッセンス評価2019
- Author(s)
  秩父重英,嶋紘平,小島一信,
- Organizer
  窒化物半導体特異構造の科学－ナノ物性評価技術の進展と物性制御 2019年春季応用物理学会シンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Quantification of external quantum efficiency for near-band-edge emission of freestanding h-BN crystals under photo-excitation2019
- Author(s)
  K. Kojima, K. Watanabe, T. Taniguchi, and S. F. Chichibu
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019), Spectroscopy & growth of h-BN II
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 時間空間分解カソードルミネッセンスによるワイドバンドギャップ半導体の所発光ダイナミクス評価2019
- Author(s)
  秩父重英
- Organizer
  日本表面真空学会 2019年6月研究例会「電子ビーム技術の新展開」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 深紫外 AlGaN 発光ダイオードを用いたギガビット級光無線通信2019
- Author(s)
  吉田悠来 , 小島一信 , 白岩雅輝, 淡路祥成 , 菅野敦史 , 山本直克 , 秩父重英 , 平野光 , 一本松正道
- Organizer
  日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第115回研究会研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] 窒化物半導体の時間空間分解カソードルミネッセンス評価2019
- Author(s)
  秩父重英
- Organizer
  応用物理学会薄膜・表面物理研究会第47回薄膜・表面物理セミナー「半導体GaNの基礎と応用」
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes2019
- Author(s)
  K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Role of Al-vacancy complexes in AlN and high AlN mole fraction AlGaN alloys2019
- Author(s)
  S. F. Chichibu, H. Miyake, and A. Uedono
- Organizer
  4th International Workshop on UV Materials and Devices (IWUMD-IV)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Improvement in the luminescence property of hexagonal boron nitride grown by CVD on a c-plane sapphire substrate2019
- Author(s)
  K.Hara, N. Umehara, K. Shima, K. Kojima, and S. F. Chichibu
- Organizer
  The 4th International Conference on Physics of 2D Crystals (ICP2C4)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Impact of vacancy complexes on the nonradiative recombination processes in III-N devices2019
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Improvement in the luminescence property of hexagonal boron nitride grown by CVD on a c-plane sapphire substrate2019
- Author(s)
  K. Hara, N. Umehara, K. Shima, K. Kojima, and S. F. Chichibu
- Organizer
  The 4th International Conference on Physics of 2D Crystals (ICP2C4)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 窒化物半導体特異構造の時間空間分解カソードルミネッセンス評価2019
- Author(s)
  秩父重英,嶋紘平,小島一信
- Organizer
  窒化物半導体特異構造の科学－ナノ物性評価技術の進展と物性制御 2019年春季応用物理学会シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 深紫外AlGaN発光ダイオードの顕微エレクトロルミネセンス測定2019
- Author(s)
  小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,平野光,長澤陽祐,一本松正道,秩父重英
- Organizer
  2019年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Quantification of external quantum efficiency for near-band-edge emission of freestanding h-BN crystals under photo-excitation2019
- Author(s)
  K. Kojima, K. Watanabe, T. Taniguchi, and S. F. Chichibu
- Organizer
  Compound Semiconductor Week 2019 (CSW 2019), Spectroscopy & growth of h-BN II
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes2019
- Author(s)
  K. Shima, K. Kojima, A. Uedono, and S. F. Chichibu
- Organizer
  19th International Workshop on Junction Technology (IWJT2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Effects of an extra Al metal added during the acidic ammonothermal growth of GaN crystals2019
- Author(s)
  D. Tomida, Q. Bao, M. Saito, K. Kurimoto, M. Ito, T. Ishiguro, and S. F. Chichibu
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Helicon-wave-excited-plasma sputtering epitaxy of (001) anatase or (100) rutile TiO2 films on a (0001) GaN template for optoelectronic applications2019
- Author(s)
  S. F. Chichibu
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2019, OPTO
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Photoluminescence studies of sequentially Mg and H ion-implanted GaN with various implantation depths and crystallographic planes2019
- Author(s)
  K. Shima, H. Iguchi, T. Narita, K. Kataoka, K. Kojima, A. Uedono, and S. F. Chichibu
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 気相成長m面自立AlN基板およびホモエピタキシャル層の偏光特性と発光ダイナミクス2019
- Author(s)
  秩父重英,小島一信,羽豆耕治,石川陽一,古澤健太郎,三田清二,R.Collazo,Z.Sitar,上殿明良
- Organizer
  2019年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Impact of vacancy complexes on the nonradiative recombination processes in III-N devices2019
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, S. Ishibashi, and A. Uedono
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] マクロステップを持つc面AlN/サファイアテンプレート上に成長させたAlGaN量子井戸の構造解析(1)2019
- Author(s)
  小島一信,長澤陽祐,平野光,一本松正道,本田善央,天野浩,赤崎勇,秩父重英,
- Organizer
  2019年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Time-resolved luminescence studies of indirect excitons in h-BN epitaxial films grown by chemical vapor deposition using carbon-free precursors2019
- Author(s)
  S. F. Chichibu, N. Umehara, K. Takiguchi, K. Shima, K. Kojima, Y. Ishitani, and K. Hara
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Role of Al-vacancy complexes in AlN and high AlN mole fraction AlGaN alloys2019
- Author(s)
  S. F. Chichibu, H. Miyake, and A. Uedono
- Organizer
  th International Workshop on UV Materials and Devices (IWUMD-IV)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 深紫外AlGaN発光ダイオードの顕微エレクトロルミネセンス測定2019
- Author(s)
  小島一信、吉田悠来、白岩雅輝、淡路祥成、菅野敦史、山本直克、平野光、長澤陽祐、一本松正道、秩父重英
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] 窒化物半導体の時間空間分解カソードルミネッセンス評価2019
- Author(s)
  秩父重英
- Organizer
  応用物理学会薄膜・表面物理研究会第47回薄膜・表面物理セミナー「半導体GaNの基礎と応用」－パワーデバイス開発のための合成・分析・構造設計技術－
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] An Outdoor Evaluation of 1-Gbps Optical Wireless Communication using AlGaN-based LED in 280-nm Band2019
- Author(s)
  Yuki Yoshida, Kazunobu Kojima, Masaki Shiraiwa, Yoshinari Awaji, Atsushi Kanno, Naokatsu Yamamoto, Shigefusa F. Chichibu, Akira Hirano, Masamichi Ippommatsu
- Organizer
  Conference on Lasers and Electro-Optics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02145
[Presentation] Time-resolved luminescence studies of indirect excitons in h-BN epitaxial films grown by chemical vapor deposition using carbon-free precursors2019
- Author(s)
  S. F. Chichibu, N. Umehara, K. Takiguchi, K. Shima, K. Kojima, Y. Ishitani, and K. Hara
- Organizer
  The 13th International Conference on Nitride Semiconductors (ICNS-13)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 多光子励起による窒化ガリウム結晶の時間分解フォトルミネセンス分光(2)2019
- Author(s)
  小島一信,谷川智之,粕谷拓生,片山竜二,田中敦之,本田善央,天野浩,秩父重英
- Organizer
  2019年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 時間空間分解カソードルミネッセンスによるワイドバンドギャップ半導体の所発光ダイナミクス評価2019
- Author(s)
  秩父重英
- Organizer
  日本表面真空学会 2019年6月研究例会「電子ビーム技術の新展開」
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] バンド端近傍発光の外部量子効率が4%を超える六方晶BN単結晶の光学評価2018
- Author(s)
  小島一信,渡邊賢司,谷口尚,秩父重英,
- Organizer
  2018年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(1)2018
- Author(s)
  秩父重英,小島一信,
- Organizer
  2018年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Spatio-time-resolved cathodoluminescence of h-BN microcrystals2018
- Author(s)
  S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] サファイア基板に気相成長させたh-BN薄膜の発光ダイナミクス2018
- Author(s)
  秩父重英,嶋紘平,梅原直己,小島一信,原和彦,
- Organizer
  2018年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE2018
- Author(s)
  Y. Inatomi, A. Kusaba, Y. Kangawa, K. Kojima, and S. F. Chichibu
- Organizer
  The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaN結晶成長技術の進展と発光特性向上の現状2018
- Author(s)
  秩父重英,上殿明良
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会, プレIWN2018第１０回窒化物半導体結晶成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Carrier trapping properties of defects in Mg-implanted GaN probed by monoenergetic positron beams2018
- Author(s)
  A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, and S. Ishibashi
- Organizer
  The 45th International Symposium on Compound Semiconductors (ISCS 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Mgイオン注入N極性面GaNの時間分解フォトルミネッセンス評価2018
- Author(s)
  嶋紘平,井口紘子,成田哲生,片岡恵太,上殿明良,小島一信,秩父重英
- Organizer
  2018年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] サファイア基板に気相成長させた六方晶BN薄膜の発光スペクトル2018
- Author(s)
  秩父重英,梅原直己,小島一信,原和彦
- Organizer
  2018年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  The 3rd International Conference on Physics of 2D Crystals (ICP2C3),
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Microscopic structure of boosting IQE for AlGaN-based UV-B (285 nm) LED grown on macrosteps2018
- Author(s)
  Y. Nagasawa, K. Kojima, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE2018
- Author(s)
  Y. Inatomi, A. Kusaba, Y. Kangawa, K. Kojima, and S. F. Chichibu
- Organizer
  The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18),
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] AlN,AlGaN薄膜および量子井戸の発光特性2018
- Author(s)
  秩父重英,小島一信,三宅秀人,平松和正,上殿明良,
- Organizer
  日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第110回研究会・特別公開シンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  The 3rd International Conference on Physics of 2D Crystals (ICP2C3)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] P-type Conduction of Mg-ion Implanted N-polar GaN and the Optical Investigation2018
- Author(s)
  T. Narita, K. Kataoka, H. Iguchi, K. Shima, K. Kojima, S. F. Chichibu, M. Kanechika, T. Uesugi, and T. Kachi:
- Organizer
  The 6th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'18),
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  The 3rd International Conference on Physics of 2D Crystals (ICP2C3)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Current localization structure observed in AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN templates with macrosteps2018
- Author(s)
  K. Kojima, Y. Nagasawa, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018),
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 酸性アモノサーマル法による大口径GaNバルク結晶作製技術の展望2018
- Author(s)
  秩父重英,斉藤真,包全喜,冨田大輔,嶋紘平,小島一信,石黒徹,
- Organizer
  日本学術振興会結晶加工と評価技術145委員会パワーデバイス用シリコンおよび関連半導体に関する研究会（第6回）
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 280nm帯深紫外AlGaN発光ダイオードを用いた日光下における1.6 Gbps光無線伝送2018
- Author(s)
  小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,秩父重英,
- Organizer
  2018年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(1)2018
- Author(s)
  秩父重英,小島一信
- Organizer
  2018年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] サファイア基板に気相成長させた六方晶BN薄膜の発光スペクトル2018
- Author(s)
  秩父重英,梅原直己,小島一信,原和彦
- Organizer
  2018年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Mg添加GaNエピ層及びイオン注入層のフォトルミネッセンス評価2018
- Author(s)
  秩父重英,嶋紘平,小島一信,高島信也,上野勝典,江戸雅晴,井口紘子,成田哲生,片岡恵太,石橋章司,上殿明良,
- Organizer
  応用物理学会結晶工学分科会, 第149回結晶工学分科会研究会「GaNonGaNパワーデバイスにむけて～p型GaNの結晶工学～」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 陽電子消滅法によるp-GaNエピ層、イオン注入層の点欠陥評価2018
- Author(s)
  上殿明良,石橋章司,小島一信,秩父重英,
- Organizer
  応用物理学会結晶工学分科会, 第149回結晶工学分科会研究会「GaNonGaNパワーデバイスにむけて～p型GaNの結晶工学～」
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Influence of Self Absorption in Two-Photon-Excitation Photoluminescence of GaN2018
- Author(s)
  T. Tanikawa, T. Fujita, K. Kojima, S. F. Chichibu, and T. Matsuoka
- Organizer
  The 19th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-19)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 六方晶BNの薄膜成長とその深紫外発光評価2018
- Author(s)
  原和彦,梅原直己,小島一信,秩父重英
- Organizer
  2018年春季応用物理学会,　多元化合物の新規な物性と応用, 多元系化合物・太陽電池研究会企画シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] Spatio-time-resolved cathodoluminescence of h-BN microcrystals2018
- Author(s)
  S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Different nonradiative recombination between on the terraces and macrosteps of uneven QW for 285 nm-LED grown on AlN template with dense macrosteps2018
- Author(s)
  Y. Nagasawa, K. Kojima, R. Sugie, A. Hirano, M. Ippommatsu, H. Amano, I. Akasaki, and S. F. Chichibu
- Organizer
  The International Workshop on UV Materials and Devices (IWUMD)
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  The 3rd International Conference on Physics of 2D Crystals (ICP2C3)
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] サファイア基板に気相成長させた六方晶BN薄膜の発光スペクトル2018
- Author(s)
  秩父重英,梅原直己,小島一信,原和彦
- Organizer
  2018年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] MOVPE成長m面AlInN/GaNヘテロ構造における特異構造(2)2018
- Author(s)
  稲富悠也,草場彰,柿本浩一,寒川義裕,小島一信,秩父重英,
- Organizer
  2018年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere2018
- Author(s)
  K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu, :
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Spatio-time-resolved cathodoluminescence of h-BN microcrystals2018
- Author(s)
  S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Different nonradiative recombination between on the terraces and macrosteps of uneven QW for 285 nm-LED grown on AlN template with dense macrosteps2018
- Author(s)
  Y. Nagasawa, K. Kojima, R. Sugie, A. Hirano, M. Ippommatsu, H. Amano, I. Akasaki, and S. F. Chichibu
- Organizer
  The International Workshop on UV Materials and Devices (IWUMD)
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Microscopic structure of boosting IQE for AlGaN-based UV-B (285 nm) LED grown on macrosteps2018
- Author(s)
  Y. Nagasawa, K. Kojima, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sappire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  Materials Research Society, 2018 Fall Meeting
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sapphire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018),
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] サファイア基板に気相成長させたh-BN薄膜の発光ダイナミクス2018
- Author(s)
  秩父重英,嶋紘平,梅原直己,小島一信,原和彦
- Organizer
  2018年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Luminescence dynamics of indirect excitons in h-BN epitaxial films grown by BCl3-NH3 chemical vapor deposition on a c-plane sappire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  Materials Research Society, 2018 Fall Meeting,
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Quantum efficiency of radiation in wide bandgap semiconductors2018
- Author(s)
  K. Kojima and S. F. Chichibu
- Organizer
  19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaNの二光子励起フォトルミネッセンス測定における自己吸収の影響2018
- Author(s)
  谷川智之,小島一信,秩父重英,松岡隆志
- Organizer
  2018年春季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Luminescence spectra of hexagonal BN thin films grown by chemical vapor deposition on a c-plane sapphire substrate2018
- Author(s)
  S. F. Chichibu, N. Umehara, K. Shima, K. Kojima, and K. Hara
- Organizer
  The 3rd International Conference on Physics of 2D Crystals (ICP2C3)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] 280nm帯深紫外AlGaN発光ダイオードを用いた日光下における1.6 Gbps光無線伝送2018
- Author(s)
  小島一信,吉田悠来,白岩雅輝,淡路祥成,菅野敦史,山本直克,秩父重英
- Organizer
  2018年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Room-temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted Mg-doped GaN on GaN structures2018
- Author(s)
  S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, K. Ueno, M. Edo, H. Iguchi, T. Narita, K. Kataoka, S. Ishibashi, and A. Uedono
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018),
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaN結晶成長技術の進展と発光特性向上の現状2018
- Author(s)
  秩父重英,上殿明良
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会, プレIWN2018第１０回窒化物半導体結晶成長講演会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] AlN,AlGaN薄膜および量子井戸の発光特性2018
- Author(s)
  秩父重英,小島一信,三宅秀人,平松和正,上殿明良,
- Organizer
  日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第110回研究会・特別公開シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Recent progress in acidic ammonothermal growth of GaN crystals2018
- Author(s)
  S. F. Chichibu, M. Saito, Q. Bao, D. Tomida, K. Kurimoto, K. Shima, K. Kojima, and T. Ishiguro
- Organizer
  The 7th International Symposium of Growth of III-Nitrides (ISGN-7),
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Quantum efficiency of radiation in wide bandgap semiconductors2018
- Author(s)
  K. Kojima and S. F. Chichibu
- Organizer
  19th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN19),
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Current localization structure observed in AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN templates with macrosteps2018
- Author(s)
  K. Kojima, Y. Nagasawa, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018）
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Spatio-time-resolved cathodoluminescence studies on hexagonal BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara
- Organizer
  The 2nd International Conference on Physics of 2D Crystals (ICP2C2)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Spatio-Time-Resolved Cathodoluminescence studies of h-BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] サファイア基板上に成長した六方晶窒化ホウ素薄膜の深紫外カソードルミネッセンス2017
- Author(s)
  原和彦,梅原直己,秩父重英,小島一信,光野徹也,小南裕子
- Organizer
  日本結晶成長学会第46回結晶成長国内会議(JCCG-46)
- Invited
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] Carrier trapping/detrapping properties of defects in Mg-implanted GaN probed by monoenergetic positron beams2017
- Author(s)
  A. Uedono, S. Takashima, M. Edo, K. Ueno, H. Matsuyama, W. Egger, T. Koschine, C. Hugenschmidt, M. Dickmann, K. Kojima, S. F. Chichibu, and S. Ishibashi
- Organizer
  The 45th International Symposium on Compound Semiconductors (ISCS 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaN中の非輻射再結合中心の正体とその特性2017
- Author(s)
  秩父重英,小島一信,上殿明良
- Organizer
  応用物理学会結晶工学分科会, 第147回結晶工学分科会研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Spatio-time-resolved cathodoluminescence studies on hexagonal BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara
- Organizer
  The 2nd International Conference on Physics of 2D Crystals (ICP2C2)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] IQE Quantification of Nitride Semiconductors - Omnidirectional photoluminescence (ODPL) measurement utilizing an integrating sphere -2017
- Author(s)
  K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu:
- Organizer
  The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'17)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Periodic compositional undulation in the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a GaN substrate2017
- Author(s)
  S. F. Chichibu and K. Kojima:
- Organizer
  European Materials research, optoelectronic devices and sensors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Spatio-time-resolved cathodoluminescence studies of hexagonal BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara
- Organizer
  International Workshop on UV Materials and Devices (IWUMD) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] n-GaNホモエピ薄膜上へのp-NiOスパッタ堆積とUV光吸収太陽電池及びLEDの試作2017
- Author(s)
  王澤樺,中井洋志,杉山睦,秩父重英
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 偏光遷移領域におけるc面AlGaN量子井戸構造の量子細線型状態密度2017
- Author(s)
  坂井繁太,南琢人,小島一信,秩父重英,山口敦史
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] A high internal quantum efficiency of the emission in GaN single crystals observed by omnidirectional photoluminescence (ODPL)2017
- Author(s)
  K. Kojima, H. Ikeda, K. Fujito, and S. F. Chichibu
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 全方位フォトルミネセンス(ODPL)法を用いた窒化物半導体の発光量子効率測定2017
- Author(s)
  小島一信,三宅秀人,平松和政,秩父重英,
- Organizer
  日本結晶成長学会第46回結晶成長国内会議(JCCG-46)
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Periodic compositional undulation in the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a GaN substrate2017
- Author(s)
  S. F. Chichibu and K. Kojima
- Organizer
  European Materials Research Society, 2017 Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 高品質窒化ガリウム単結晶の光物性評価2017
- Author(s)
  小島一信,秩父重英,池田宏隆,藤戸健史
- Organizer
  2017年秋季セラミクス協会第30回シンポジウム
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Spatio-Time-Resolved Cathodoluminescence studies of h-BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Spatio-Time-Resolved Cathodoluminescence studies of h-BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] m面AlInNエピタキシャルナノ構造を用いた偏光光源の可能性2017
- Author(s)
  秩父重英,小島一信,上殿明良,佐藤義孝
- Organizer
  2017年春季応用物理学会シンポジウム
- Place of Presentation
  横浜国際平和会議場（神奈川県横浜市）
- Year and Date
  2017-03-14
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 六方晶BN微結晶の発光ダイナミクス評価(3)2017
- Author(s)
  秩父重英,石川陽一,小南裕子,原和彦
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] A theoretical proposal for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlxGa1-xN multiple quantum wells2017
- Author(s)
  K. Kojima, K. Furusawa, Y. Yamazaki, H. Miyake, K. Hiramatsu, and S. F. Chichibu:
- Organizer
  The 18th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN18)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Optical and defect characteristics of m-plane Al1-xInxN epitaxial nanostructures2017
- Author(s)
  S. F. Chichibu, K. Kojima, and A. Uedono
- Organizer
  8th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Vacuum-fluorescent-display devices emitting polarized deep-ultraviolet and visible lights using m-plane Al1-xInxN epitaxial nanostructures2017
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaN基板上Mg添加GaNの時間分解フォトルミネッセンス評価2017
- Author(s)
  秩父重英,小島一信,嶋紘平,高島信也,江戸雅晴,上野勝典,石橋章司,上殿明良
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Consideration of Shockley-Read-Hall nonradiative recombination centers in wide bandgap (Al,Ga)N and ZnO2017
- Author(s)
  S. F. Chichibu, K. Kojima, K. Shima, A. Uedono, and S. Ishibashi
- Organizer
  Materials Research Society, 2017 Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Consideration of Shockley-Read-Hall nonradiative recombination centers in wide bandgap (Al,Ga)N and ZnO2017
- Author(s)
  S. F. Chichibu, K. Kojima, K. Shima, A. Uedono, and S. Ishibashi
- Organizer
  Materials Research Society, 2017 Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Spatio-time-resolved cathodoluminescence studies of hexagonal BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara
- Organizer
  International Workshop on UV Materials and Devices (IWUMD) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Theoretical study of composition pulling effect in AlGaN and AlInN MOVPE2017
- Author(s)
  Y. Inatomi, Y. Kangawa, S. F. Chichibu, and K. Kakimoto
- Organizer
  International Workshop on UV Materials and Devices (IWUMD) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Compositional modulation for high AlN mole fraction AlxGa1-xN multiple quantum wells to enhance overlap integral of carrier wavefunctions2017
- Author(s)
  K. Kojima, Y. Hayashi, K. Hiramatsu, H. Miyake, and S. F. Chichibu:
- Organizer
  International Workshop on UV Materials and Devices (IWUMD) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Spatio-time-resolved cathodoluminescence studies on hexagonal BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, Y. Kominami, and K. Hara
- Organizer
  The 2nd International Conference on Physics of 2D Crystals (ICP2C2)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Quantum-Wire-Like Density of States in c-plane AlGaN Quantum Wells in Polarization-Crossover Composition Region2017
- Author(s)
  S. Sakai, T. Minami, K. Kojima, S. F. Chichibu, and A. A. Yamaguchi
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] UV light absorbing and emitting diodes consisting of a p-type NiO film deposited on an n-type GaN homoepitaxial epilayer2017
- Author(s)
  W. Zehua, H. Nakai, M. Sugiyama, and S. F. Chichibu
- Organizer
  Materials Research Society, 2017 Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 六方晶BN微結晶の発光ダイナミクス評価(3)2017
- Author(s)
  秩父重英,石川陽一,小南裕子,原和彦
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 六方晶BN微結晶の発光ダイナミクス評価(4)2017
- Author(s)
  秩父重英,石川陽一,小南裕子,原和彦
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Origin and properties of intrinsic Shockley-Read-Hall nonradiative recombination centers in GaN2017
- Author(s)
  S. F. Chichibu, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Optical characteristics of c-plane AlGaN multiple-quantum-well light-emitting diode structures with macro-size steps2017
- Author(s)
  K. Kojima, Y. Nagasawa, A. Hirano, M. Ipponmatsu, Y. Honda, H. Amano, I. Akasaki, and S. F. Chichibu
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaNの低転位密度化・高純度化と主要な非輻射再結合中心2017
- Author(s)
  秩父重英,上殿明良,嶋紘平,小島一信,石橋章司
- Organizer
  応用物理学会先進パワー半導体分科会第3回個別討論会「GaN縦型パワーデバイスのドリフト層成長技術」
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Vacuum-fluorescent-display devices emitting polarized deep-ultraviolet and visible lights using m-plane Al1-xInxN epitaxial nanostructures2017
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Organizer
  11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 六方晶BNの薄膜成長とその深紫外発光評価2017
- Author(s)
  原和彦,梅原直己,小島一信,秩父重英
- Organizer
  2018年春季応用物理学会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Spatio-time-resolved cathodoluminescence studies of hexagonal BN microcrystals2017
- Author(s)
  S. F. Chichibu, Y. Ishikawa, H. Kominami, and K. Hara
- Organizer
  International Workshop on UV Materials and Devices (IWUMD) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] GaNの低転位密度化・高純度化と主要な非輻射再結合中心2017
- Author(s)
  秩父重英,上殿明良,嶋紘平,小島一信,石橋章司
- Organizer
  応用物理学会先進パワー半導体分科会第3回個別討論
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] GaN中の非輻射再結合中心の正体とその特性2017
- Author(s)
  秩父重英,小島一信,上殿明良
- Organizer
  応用物理学会結晶工学分科会, 第147回結晶工学分科会研究会「ワイドバンドギャップ半導体デバイス～窒化物・SiCにおける成長・プロセス欠陥の評価と制御～」
- Invited
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] A way to achieve more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlGaN MQWs2017
- Author(s)
  S. F. Chichibu, K. Kojima, K. Furusawa, Y. Yamazaki, K. Hiramatsu, and H.Miyake
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] ワイドギャップ半導体の発光量子効率と発光寿命の相関2017
- Author(s)
  小島一信,秩父重英
- Organizer
  応用物理学会励起ナノプロセス研究会第13回研究会
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Cathodoluminescence characterization of the hexagonal boron nitride thin films grown on c-plane sapphire substrates2017
- Author(s)
  N. Umehara, T. Kouno, H. Kominami, K. Kojima, S. F. Chichibu, and K. Hara
- Organizer
  International Workshop on UV Materials and Devices (IWUMD) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] 二次組成変調によって電子・正孔波動関数の重なり積分を増強させた　c面AlGaN多重量子井戸の発光特性評価2017
- Author(s)
  小島一信,林侑介,三宅秀人,平松和政,秩父重英,
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Origin and properties of intrinsic Shockley-Read-Hall nonradiative recombination centers in GaN2017
- Author(s)
  S. F. Chichibu, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 六方晶BN微結晶の発光ダイナミクス評価(3)2017
- Author(s)
  秩父重英,石川陽一,小南裕子,原和彦
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Optical and defect characteristics of m-plane Al1-xInxN epitaxial nanostructures2017
- Author(s)
  S. F. Chichibu, K. Kojima, and A. Uedono
- Organizer
  8th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] 六方晶BN微結晶の発光ダイナミクス評価(4)2017
- Author(s)
  秩父重英,石川陽一,小南裕子,原和彦
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-16K14222
[Presentation] 六方晶BN微結晶の発光ダイナミクス評価(4)2017
- Author(s)
  秩父重英,石川陽一,小南裕子,原和彦
- Organizer
  2017年秋季応用物理学会
- Data Source
  KAKENHI-PROJECT-17H02907
[Presentation] Role of point defects on the luminescent properties of epitaxial and ion-implanted Mg-doped GaN fabricated on a GaN substrate2017
- Author(s)
  S. F. Chichibu, K. Kojima, S. Takashima, M. Edo, K. Ueno, M. Shimizu, T. Takahashi, S. Ishibashi, and A. Uedono
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] マクロステップを有するc面AlGaN量子井戸発光ダイオード構造の発光特性2017
- Author(s)
  小島一信,長澤陽祐,平野光,一本松正道,本田善央,天野浩,赤崎勇,秩父重英
- Organizer
  2017年春季応用物理学会
- Place of Presentation
  横浜国際平和会議場（神奈川県横浜市）
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] フェムト秒レーザ励起光電子銃によるⅢ族窒化物半導体の時間・空間分解カソードルミネッセンス評価2016
- Author(s)
  秩父　重英
- Organizer
  電子情報通信学会第4回超高速光エレクトロニクス研究会-UFO・IPDA・OPE・OME合同研究会
- Place of Presentation
  東北大学　片平キャンパス（宮城県仙台市）
- Year and Date
  2016-11-24
- Invited
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Defect-resistant emission properties of nonpolar m-plane Al1-xInxN epilayers for deep-ultraviolet to visible polarized-light-emitting vacuum fluorescent display devices2016
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13344
[Presentation] Defect-resistant luminescent probability of m-plane AlInN alloy films for deep ultraviolet and visible polarized light-emitters2016
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Organizer
  European Materials Research Society, 2016 Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-09-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13344
[Presentation] Defect-resistant emission properties of nonpolar m-plane Al1-xInxN epilayers for deep-ultraviolet to visible polarized-light-emitting vacuum fluorescent display devices2016
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Organizer
  International Workshop on Nitride Semiconductors 2016 (IWN2016)
- Place of Presentation
  Orland, Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 自立GaN基板上m面Al1-xInxNエピタキシャル薄膜の発光特性(Ⅳ)2016
- Author(s)
  秩父重英，小島一信，山崎芳樹，佐藤義孝，上殿明良
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13344
[Presentation] Metalorganic vapor phase epitaxy of pseudomorphic m-plane Al1-xInxN alloy films on a low defect density m-plane GaN substrate2016
- Author(s)
  S. F. Chichibu, K. Kojima, Y. Yamazaki, and K. Furusawa
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] Defect-resistant luminescent probability of m-plane AlInN alloy films for deep ultraviolet and visible polarized light-emitters2016
- Author(s)
  S. F. Chichibu, K. Kojima, A. Uedono, and Y. Sato
- Organizer
  European Materials Research Society, 2016 Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-09-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06427
[Presentation] 自立GaN基板上m面Al1-xInxNエピタキシャル薄膜の発光特性2016
- Author(s)
  秩父重英，小島一信，上殿明良
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会第８回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学（京都府京都市）
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15K13344
[Presentation] Metalorganic vapor phase epitaxy of pseudomorphic m-plane Al1-xInxN alloy films on a low defect density m-plane GaN substrate2016
- Author(s)
  S. F. Chichibu, K. Kojima, Y. Yamazaki, and K. Furusawa
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13344
[Presentation] Metalorganic vapor phase epitaxy and time-resolved luminescence studies of pseudomorphic m-plane Al1-xInxN epitaxial films on a low defect density m-plane GaN substrate2015
- Author(s)
  S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, H. Ikeda, and K. Fujito
- Organizer
  The 6th International Symposium on Growth of III-Nitrides (ISGN-6)
- Place of Presentation
  Hamamatsu, Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13344
[Presentation] Spectroscopic ellipsometry studies on the m-plane Al1-xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate2015
- Author(s)
  K. Kojima, D. Kagaya, Y. Yamazaki, H. Ikeda, K. Fujito, and S. F Chichibu
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Beijin, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13344
[Presentation] Time-resolved and spatially-resolved luminescence studies on ultraviolet to green luminescence peaks of m-plane Al1-xInxN epilayers grown on a low defect density m-plane GaN substrate2015
- Author(s)
  S. F. Chichibu, K. Kojima, Y. Yamazaki, K. Furusawa, H. Ikeda, and K. Fujito
- Organizer
  The 11th International Conference on Nitride Semiconductors (ICNS-11)
- Place of Presentation
  Beijin, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13344
[Presentation] 水熱合成ZnO ターゲットを用いたZnO薄膜のヘリコン波励起プラズマスパッタエピタキシー(2)2014
- Author(s)
  古澤健太郎,中沢駿仁,石川陽一,田代公則,秩父重英
- Organizer
  2014年春季応用物理学会
- Place of Presentation
  相模原市
- Year and Date
  2014-03-17
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 反応性ヘリコン波励起プラズマスパッタ法によるZnO系微小光共振器形成の検討2014
- Author(s)
  古澤健太郎,柿畑研人,小山雅史,秩父重英
- Organizer
  2014年春季応用物理学会
- Place of Presentation
  相模原市
- Year and Date
  2014-03-17
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 高輝度表面入射型パルス電子銃を搭載した時間空間分解カソードルミネッセンス装置によるHVPE成長GaN基板の評価2013
- Author(s)
  石川陽一,古澤健太郎,田代公則,羽豆耕治,長尾哲,池田宏隆,藤戸健史,秩父重英
- Organizer
  2013年春季応用物理学会(30p-G21-3)
- Place of Presentation
  神奈川工業大学,神奈川県
- Year and Date
  2013-03-30
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors2013
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia
- Place of Presentation
  京都
- Year and Date
  2013-09-17
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Impacts of point defects on the photoluminescence lifetime of Si-doped Al_<0.6>Ga_<0.4>N epilayers grown on an AlN template2012
- Author(s)
  S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Miyake, K. Hiramatsu, and A. Uedono
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo,Japan
- Year and Date
  2012-10-17
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] 表面入射型パルス光電子銃を搭載した時間空間分解カソードルミネッセンス装置によるワイドバンドギャップ半導体の評価2012
- Author(s)
  古澤健太郎,石川陽一,田代公則,羽豆耕治,秩父重英
- Organizer
  2012年秋季応用物理学会(12p-H10-21)
- Place of Presentation
  愛媛大学,愛媛県
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] 単結晶酸化亜鉛薄膜へのN,Pイオン注入と熱処理効果2012
- Author(s)
  藤本龍吾, 和田凉太, 小池一歩, 佐々誠彦, 矢野満明, 吉田謙一, 長町信治, 羽豆耕治, 秩父重英
- Organizer
  日本材料学会半導体エレクトロニクス部門委員会
- Place of Presentation
  京都工芸繊維大学,京都府
- Year and Date
  2012-03-24
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 高AlNモル分率AlGaN混晶薄膜の時間分解PL/CL評価2012
- Author(s)
  秩父重英,羽豆耕治,尾沼猛儀,上殿明良
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学, 東京都
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Si添加Al_<0.6>Ga_<0.4>N混晶薄膜の時間分解フォトルミネッセンス評価2012
- Author(s)
  羽豆耕治, 石川陽一, 田代公則, 三宅秀人, 平松和政, 上殿明良, 秩父重英
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] ルチルおよびアナターゼTiO_2/GaNヘテロ界面のX線光電子分光法による価電子帯オフセット評価2012
- Author(s)
  羽豆耕治, 中山徳行, 田中明和, 秩父重英
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Advantages and issues of m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for InGaN and AlGaN epitaxial growth, 招待講演2012
- Author(s)
  S. F. Chichibu, K. Hazu, P. Corfdir, J.-D. Ganiere, B. Deveaud-Pledran, N. Grandjean, S. Kubo, H. Namita, S. Nagao, K. Fujito, K. Shimoyama, and A. Uedono
- Organizer
  German Physical Society (DPG) Spring Meeting, Technical University of Berlin
- Place of Presentation
  Berlin, Germany
- Year and Date
  2012-03-26
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Spatio-time-resolved cathodoluminescence study using a femtosecond focused electron beam on freestanding GaN substrates grown by hydride vapor phase epitaxy2012
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  The 39th International Symposium on Compound Semiconductors (ISCS 2012)
- Place of Presentation
  Santa Barbara, CA, USA
- Year and Date
  2012-08-29
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] 時空間同時分解カソードルミネッセンス法によるIII族窒化物半導体評価(2)-HVPE成長GaN基板(2)-2012
- Author(s)
  石川陽一, 羽豆耕治, 田代公則, 松本創, 藤戸健史, 下山謙司, 秩父重英
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] フェムト秒パルス電子線発生とワイドギャップ半導体の評価2012
- Author(s)
  秩父重英,羽豆耕治,石川陽一,古澤健太郎,上殿明良
- Organizer
  2012年春季応用物理学会(招待講演)
- Place of Presentation
  早稲田大学,東京
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Advantages and issues of m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for InGaN and AlGaN epitaxial growth2012
- Author(s)
  S. F. Chichibu, K. Hazu, P. Corfdir, J. -D. Ganiere, B. Deveaud-Pledran, N. Grandjean, S. Kubo, H. Namita, S. Nagao, K. Fujito, K. Shimoyama, and A. Uedono
- Organizer
  German Physical Society (DPG) Spring Meeting(招待講演)
- Place of Presentation
  Berlin, Germany
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] 時空間同時分解カソードルミネッセンス法によるIII族窒化物半導体評価(2) - HVPE成長GaN基板(2) -2012
- Author(s)
  石川陽一,羽豆耕治,田代公則,松本創,藤戸健史,下山謙司,秩父重英
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学, 東京都
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] フェムト秒パルス電子線発生とワイドギャップ半導体の評価2012
- Author(s)
  秩父重英,羽豆耕治,石川陽一,古澤健太郎,上殿明良
- Organizer
  2012年春季応用物理学会シンポジウム
- Place of Presentation
  東京(依頼講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 水熱合成ZnOターゲットを用いたZnO薄膜のヘリコン波励起プラズマスパッタエピタキシー2012
- Author(s)
  張成燻,羽豆耕治,秩父重英
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  東京
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] III-V族窒化物半導体の欠陥評価最前線2012
- Author(s)
  秩父重英,上殿明良
- Organizer
  応用物理学会シリコンテクノロジー分科会第148回研究集会
- Place of Presentation
  グランキューブ大阪(大阪国際会議場),大阪府,招待講演
- Year and Date
  2012-06-14
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] 水熱合成ZnOターゲットを用いたZnO薄膜のヘリコン波励起プラズマスパッタエピタキシー2012
- Author(s)
  張成燻, 羽豆耕治, 秩父重英
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] フェムト秒パルス電子線発生とワイドギャップ半導体の評価2012
- Author(s)
  秩父重英, 羽豆耕治, 石川陽一, 古澤健太郎, 上殿明良
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都(シンポジウム招待)(招待講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 高AlNモル分率AlGaN混晶薄膜の時間分解PL/CL評価2012
- Author(s)
  秩父重英, 羽豆耕治, 尾沼猛儀, 上殿明良
- Organizer
  2012年春季応用物理学会
- Place of Presentation
  早稲田大学,東京都
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy2012
- Author(s)
  S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), Session J3: Materials for Solid State Lighting, Hawaii Convention Center
- Place of Presentation
  Honolulu, Hawaii, USA
- Year and Date
  2012-10-08
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Timeresolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys, 招待講演2012
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  The Fourth International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Year and Date
  2012-07-18
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] ヘリコン波励起プラズマスパッタ法によるNb添加TiO_2薄膜の堆積(3)2011
- Author(s)
  羽豆耕治, フォウダアリィ, 南風盛将光, 中山徳行, 田中明和, 秩父重英
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 時空間同時分解カソードルミネッセンス法によるIII族窒化物半導体評価(1) - HVPE成長GaN基板2011
- Author(s)
  石川陽一,羽豆耕治,松本創,藤戸健史,下山謙司,秩父重英
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学, 山形県
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] GaNと格子整合するY_xAl_yGa_<1-x-y>Nの自発分極とバンドギャップボーイングの第一原理計算2011
- Author(s)
  島田和宏, 羽豆耕治, 秩父重英, 秦雅彦, 高田朋幸, 佐沢洋幸, 宗田孝之
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学,山形県
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] ウルツ鉱型Mg_xZnl-_x0混晶の弾性テンソル要素に関する考察2011
- Author(s)
  張成燻, 羽豆耕治, 秩父重英
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] m面自立GaN基板のチルトモゼイク異方性がNH3-MBE成長m面Al_<0.25>Ga_<0.75>N薄膜の発光特性に与える影響2011
- Author(s)
  秩父重英, 他
- Organizer
  2011年春季応用物理学会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] ヘリコン波励起プラズマスパッタエピタキシーによるC面GaN上へのルチル/アナターゼTio_2:Nb薄膜の結晶相選択成長2011
- Author(s)
  羽豆耕治, フォウダアリィ, 中山徳行, 田中明和, 秩父重英
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚柿
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] ヘリコン波励起プラズマスパッタ法によるNb添加TiO_2薄膜の堆積(4)2011
- Author(s)
  羽豆耕治, 南風盛将光, 中山徳行, 田中明和, 秩父重英
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学,山形県
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Point defects in GaN and related group-III nitrides studied by means of positron annihilation2011
- Author(s)
  A.Uedono, S.Ishibashi, S.F.Chichibu, K.Akimoto
- Organizer
  SPIE Photonics West California
- Place of Presentation
  USA
- Year and Date
  2011-01-23
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys2011
- Author(s)
  S. F. Chichibu, T. Onuma, K. Hazu, T. Sota, and A. Uedono
- Organizer
  European Materials Research Society, 2011 Spring Meeting(招待講演)
- Place of Presentation
  Nice, France
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, T.Sota, A.Uedono
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-12
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] AlNエピタキシャル薄膜の発光寿命と点欠陥他の関係について2011
- Author(s)
  秩父重英,羽豆耕治,尾沼猛儀,上殿明良
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学, 山形県
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] 気相合成NH_4Cl鉱化剤を用いて成長したアモノサーマルGaN基板上にMOVPE形成したAlGaN/GaNの時間分解フォトルミネッセンス評価2011
- Author(s)
  秩父重英, 他
- Organizer
  2011年春季応用物理学会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] AlNエピタキシャル薄膜の発光寿命と点欠陥他の関係について2011
- Author(s)
  秩父重英, 羽豆耕治, 尾沼猛儀, 上殿明良
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学,山形県
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 偏光反射スペクトル解析によるZnOの物性値の同定2011
- Author(s)
  羽豆耕治, 吉海江憲, 吉岡宗一郎, 高木絢子, 鳥井康介, 宗田孝之, 秩父重英
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学,山形県
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] ウルツ鉱型Mg_xZn_<1-x>O混晶の弾性テンソル要素C_<13>、C_<33>に関する考察2011
- Author(s)
  張成燻, 羽豆耕治, 秩父重英
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学,山形県
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Identification of extremely radiative nature of AlN by time-resolved photoluminescence and time-resolved cathodoluminescence measurements2011
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, A.Uedono, T.Sota
- Organizer
  SPIE Photonics West California
- Place of Presentation
  USA
- Year and Date
  2011-01-22
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys2011
- Author(s)
  S. F. Chichibu, T. Onuma, K. Hazu, T. Sota, and A. Uedono
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] フェムト秒パルス電子線を用いた窒化物半導体の時間・空間分解カソードルミネッセンス計測2011
- Author(s)
  秩父重英
- Organizer
  多元系機能性材料研究会平成23年度年末講演会
- Place of Presentation
  愛媛大学,愛媛県
- Year and Date
  2011-12-10
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN andhigh AlN mole fraction AlGaN alloys, 招待講演2011
- Author(s)
  S. F. Chichibu, T. Onuma, K. Hazu, T. Sota, and A. Uedono
- Organizer
  European Materials Research Society, 2011 Spring Meeting
- Place of Presentation
  Session F, Nice, France
- Year and Date
  2011-05-10
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] MOVPE成長AlN薄膜の点欠陥・不純物が発光寿命に及ぼす影響2011
- Author(s)
  秩父重英, 他
- Organizer
  2011年春季応用物理学会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] ウルツ鉱型MgxZn1-xO混晶の弾性テンソル要素C13、C33に関する考察2011
- Author(s)
  張成燻,羽豆耕治,秩父重英
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 偏光反射スペクトル解析によるZnO の物性値の同定2011
- Author(s)
  羽豆耕治,吉海江憲,吉岡宗一郎,高木絢子,鳥井康介,宗田孝之,秩父重英
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形
- Year and Date
  2011-09-01
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN and high AlN mole fraction AlGaN alloys2011
- Author(s)
  S.F.Chichibu, T.Onuma, K.Hazu, T.Sota, A.Uedono
- Organizer
  European Materials Research Society, 2011 Spring Meeting
- Place of Presentation
  Nice, France(招待)(招待講演)
- Year and Date
  2011-05-11
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] m面ZnO基板の偏光反射スペクトルの解析2011
- Author(s)
  羽豆耕治, 吉海江憲, 吉岡宗一郎, 高木絢子, 鳥井康介, 宗田孝之秩父重英
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] ヘリコン波励起プラズマスパッタエピタキシーによるc面GaN上へのルチル/アナターゼTiO_2:Nb薄膜の結晶相選択成長(2)2011
- Author(s)
  羽豆耕治, 中山徳行, 田中明和, 秩父重英
- Organizer
  2011年秋季応用物理学会
- Place of Presentation
  山形大学,山形県
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence study on a freestanding GaN substrate grown by halide vapor phase epitaxy2011
- Author(s)
  Y. Ishikawa, K. Hazu, H. Matsumoto, K. Suzaki, K. Fujito, S. Nagao, M. Shigeiwa, and S. F. Chichibu
- Organizer
  The 9th International Conference on Nitride Semiconductors (ICNS-9)
- Place of Presentation
  Glasgow, UK
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] フェムト秒パルス電子線を用いた窒化物半導体の時間・空間分解カソードルミネッセンス計測2011
- Author(s)
  秩父重英
- Organizer
  多元系機能性材料研究会平成23年度年末講演会
- Place of Presentation
  愛媛大学, 愛媛県
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Identification of extremely radiative nature of AlN by time-resolved photoluminescence and time-resolved cathodoluminescence measurements2011
- Author(s)
  S.F.Chichibu, et al.
- Organizer
  SPIE Photonics West
- Place of Presentation
  California, USA(招待講演)
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] AlN及び高AlNモル分率AlxGa1・xNエピタキシャル層の時間分解分光計測2010
- Author(s)
  秩父重英, 尾沼猛儀, 羽豆耕治, 上殿明良, 宗田孝之
- Organizer
  応用物理学会応用電子物性分科会研究例会「紫外光デバイスの進展:材料物性と応用」
- Place of Presentation
  大阪大学吹田キャンパス
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] フェムト秒電子ビームを用いた窒化物半導体の時間分解分光計測2010
- Author(s)
  秩父重英, 羽豆耕治, 鏡谷勇二, 尾沼猛儀, 石黒徹, 福田承生
- Organizer
  東北大学金属材料研究所ワークショップ
- Place of Presentation
  東北大学金属材料研究所
- Year and Date
  2010-10-25
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] ヘリコン波励起プラズマスパッタエピタキシーによるZn極性ZnO基板上へのMgZnO/ZnOヘテロ構造形成2010
- Author(s)
  秩父重英
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] フェムト秒電子ビームを用いた窒化物半導体の時間分解分光計測2010
- Author(s)
  秩父重英
- Organizer
  東北大学金属材料研究所ワークショップ
- Place of Presentation
  東北大学金属材料研究所(招待講演)
- Year and Date
  2010-10-25
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Spatio-time-resolved Cathodoluminescence Studies on the m-plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate by Metalorganic Vapor Phase Epitaxy2010
- Author(s)
  M.Kagaya, P.Corfdir, J.-D. Ganiere, B.Deveaud-Pledran, N.Grandjean, S.F. Chichibu
- Organizer
  Int.Workshop on Nitride Semiconductors
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] パルス電子線を用いた窒化物半導体のピコ秒時間分解分光計測(1)-パルス電子線発生とGaN計測-2010
- Author(s)
  秩父重英
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Ammonothermal growth of GaN using a gas-phase synthesized acidic mineralizer and homoepitaxy by metalorganic vapor phase epitaxy2010
- Author(s)
  S.F.Chichibu, Y.Kagamitani, K.Hazu, T.Onuma, T.Ishiguro, T.Fukuda
- Organizer
  3rd Int.Sym.on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-04
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Deposition of Anatase Nb-doped Ti0_2 Thin Films on Glass Substrates by Helicon-Wave-Excited-Plasma Sputtering method2010
- Author(s)
  A.N.Fouda, K.Hazu, T.Nakayama, A.Tanaka, S.F.Chichibu
- Organizer
  The 37th International Symposium on Compound Semiconductors
- Place of Presentation
  Kagawa,Japan
- Year and Date
  2010-05-31
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] ヘリコン波励起プラズマスパッタエピタキシーによるZn極性ZnO基板上へのMgZnO/ZnOヘテロ構造形成2010
- Author(s)
  秩父重英, 澤井泰, 天池宏明, 羽豆耕治
- Organizer
  2010年第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] 時空間同時分解カソードルミネッセンス法によるm面自立GaN基板上InGaN薄膜の局所キャリアダイナミクス解析2010
- Author(s)
  加賀谷宗仁, P.Corfdir, J.D.Ganiere, B.Deveaud-Pledran, N.Grandjean, 秩父重英
- Organizer
  第65回応用物理学会東北支部学術講演会
- Place of Presentation
  東北大学
- Year and Date
  2010-11-25
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Impacts of point defects on the luminescence properties of (Al,Ga)N2010
- Author(s)
  S.F.Chichibu
- Organizer
  The Society of Photo-Optical Instrumentation Engineers (SPIE) Photonics West 2010, OPTO, Gallium Nitride Materials and Devices V
- Place of Presentation
  San Francisco, USA
- Year and Date
  2010-01-25
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Helicon-Wave-Excited-Plasma Sputtering Epitaxy of Nb-doped TiO_2 films on GaN2010
- Author(s)
  S.F.Chichibu, A.N.Fouda T.Nakayama, A.Tanaka, K.Hazu
- Organizer
  The 37th International Symposium on Compound Semiconductors
- Place of Presentation
  Kagawa,Japan
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] TiO_2:Nb薄膜のGaNへのヘリコン波励起プラズマスパッタエピタキシー2010
- Author(s)
  羽豆耕治, アリーフォウダ, 中山徳行, 田中明和, 秩父重英
- Organizer
  2010年第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] 気相合成した酸性鉱化剤を用いて成長したアモノサーマルGaN及びMOVPEホモエピタキシャル層の評価2010
- Author(s)
  秩父重英, 鏡谷勇二, 羽豆耕治, 尾沼猛儀, 石黒徹, 福田承生
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Ammonothermal growth of GaN using a gas-phase synthesized acidic mineralizer and homoepitaxy by metalorganic vapor phase epitaxy2010
- Author(s)
  S.F.Chichibu, et al.
- Organizer
  3^<rd> Int.Sym.on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-04
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] m面AlGaN混晶薄膜の発光スペクトルと構造・点欠陥の関係2010
- Author(s)
  秩父重英
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会第2回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の新しい流れ」
- Place of Presentation
  三重大学(招待講演)
- Year and Date
  2010-05-14
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Time-resolved Photoluminescence and Time-resolved Cathodoluminescence Studies on AlN Epilayers Grown by Low-pressure Metalorganic Vapor Phase Epitaxy2010
- Author(s)
  S.F.Chichibu, K.Hazu, Y.Kagamitani, T.Onuma, D.Ehrentraut, T.Fukuda, T.Ishiguro
- Organizer
  Int.Workshop on Nitride Semiconductors
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] ヨウ化アンモニウムを鉱化剤に用いたアモノサーマル法によるGaN育成2010
- Author(s)
  鏡谷勇二, 栗林岳人, 羽豆耕治, 尾沼猛儀, 冨田大輔, 志村玲子, 秩父重英, 杉山和正, 横山千昭, 石黒徹, 福田承生
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Time-resolved photoluminescence and time-resolved cathodoluminescence studies on AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy2010
- Author(s)
  S.F.Chichibu, K.Hazu, T.Onuma, T.Sota, A.Uedono
- Organizer
  Int.Workshop on Nitride Semiconductors
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Time-resolved Photoluminescence and Time-resolved Cathodoluminescence Studies on AlN Epilayers Grown by Low-pressure Metalorganic Vapor Phase Epitaxy2010
- Author(s)
  S.F.Chichibu
- Organizer
  Int.Workshop on Nitride Semiconductors
- Place of Presentation
  Florida, U.S.A.
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Identification of cathodoluminescence peaks in m-plane AlxGa1-xN epilayers grown on freestanding GaN substrates prepared by halide vapor phase epitaxy2010
- Author(s)
  K.Hazu, M.Kagaya, T.Hoshi, T.Onuma, S.F.Chichibu
- Organizer
  3rd Int.Sym.on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Year and Date
  2010-07-04
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 自立GaN基板へのm面Al_<1-x>In_xN薄膜のMOVPE成長2010
- Author(s)
  秩父重英
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(平塚市)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] AlN及び高AlNモル分率Al_xCa_<1-x>Nエピタキシャル層の時間分解分光計測2010
- Author(s)
  秩父重英
- Organizer
  応用物理学会応用電子物性分科会研究例会「紫外光デバイスの進展:材料物性と応用]
- Place of Presentation
  大阪大学吹田キャンパス(招待講演)
- Year and Date
  2010-05-21
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Optical properties of GaN crystals gown by the amonothermal method using aidic meralizers and homoepitaxial flms grown by metalorganic vapor phase epitaxy2010
- Author(s)
  K.Hazu, Y.Kagamitani, T.Onuma, T.Ishiguro, T.Fukuda, S.F.Chichibu
- Organizer
  Int.Workshop on Nitride Semiconductors
- Place of Presentation
  Florida, USA
- Year and Date
  2010-09-19
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Observation of exciton-polariton emissions from ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy2009
- Author(s)
  Y. Sawai, H. Amaike, K. Hazu, S. F. Chichibu
- Organizer
  The 36th International Symposium on Compound Semiconductors (ISCS 2009)
- Place of Presentation
  Santa Barbara, CA, USA
- Year and Date
  2009-09-01
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] Growth issues and optical properties of nonpolar (Al,In,Ga)N films and quantum wells2009
- Author(s)
  秩父重英
- Organizer
  The 3rd Japan-Germany Joint Workshop on Nanoelectronics
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2009-01-21
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Cu(AI, Ga, In)(S, Se)_2カルコパイライト型半導体の有機金属化学気相エピタキシャル成長2009
- Author(s)
  秩父重英
- Organizer
  2009年春季応用物理学会シンポジウム
- Place of Presentation
  つくば
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] 非極性面窒化物半導体エピタキシャル薄膜成長の課題と光学遷移過程の特徴2009
- Author(s)
  秩父重英
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大学(東京都小金井市)(招待講演)
- Year and Date
  2009-05-16
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] NH_3-MBE成長m面Al_xGa_<1-x>N薄膜の空間分解陰極線蛍光評価2009
- Author(s)
  秩父重英
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県富山市)
- Year and Date
  2009-08-10
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] ヘリコン波励起プラズマスパッタエピタキシーによるZn極性ZnO基板上へのホモエピ成長2009
- Author(s)
  澤井泰, 天池宏明, 羽豆耕治, 秩父重英
- Organizer
  2009年秋季第70回応用物理学術講演会
- Place of Presentation
  富山県富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] Spatially-resolved cathodoluminescence study on m-plane Al_xGa_<1-x>N films grown on m-plane free-standing GaN substrates2009
- Author(s)
  S.F.Chichibu
- Organizer
  The 8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth2008
- Author(s)
  秩父重英
- Organizer
  50th Electronic Materials Conference
- Place of Presentation
  California, USA
- Year and Date
  2008-06-25
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Optical properties of nearly stacking-fault-free m-plane (In, Ga)N films grown by metalorganicivapor phase epitaxy on low defect density free-standing substrates2008
- Author(s)
  秩父重英
- Organizer
  The Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  Izu, Japan
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 点欠陥がAIN薄膜の発光特性に与える影響2008
- Author(s)
  秩父重英
- Organizer
  特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
- Place of Presentation
  学士会館(東京)
- Year and Date
  2008-08-01
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Effects of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN prepared by seeded ammonothermal growth2008
- Author(s)
  秩父重英
- Organizer
  The Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  Izu, Japan
- Year and Date
  2008-07-08
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Impacts of Dislocation Bending and growth polar direction on the Local Cathodoluminescence Spectra of GaN Prepared by Seeded Ammonothermal Growth2008
- Author(s)
  秩父重英
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] GaNテンプレート及びバルクZnO基板上へのZnOのHWPSE成長2008
- Author(s)
  天池宏明, 澤井泰, 羽豆耕治, 尾沼猛儀, 小山享宏, 秩父重英
- Organizer
  2008年秋季応用物理学会
- Place of Presentation
  愛知県
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] Helicon-wave-excited-plasma sputtering epitaxy of ZnO on GaN templates and bulk ZnO substrates2008
- Author(s)
  H. Amaike, Y. Sawai, K. Hazu, T. Onuma, T. Koyama, S. F. Chichibu
- Organizer
  The 5th International Workshop on ZnO and Related Materials
- Place of Presentation
  Michigan, USA
- Year and Date
  2008-09-22
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] 非極性面窒化物半導体薄膜成長と問題点2008
- Author(s)
  秩父重英
- Organizer
  東北大学多元物質科学研究所窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  仙台, 宮城
- Year and Date
  2008-10-30
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] m面自立GaN基板上へのInGaN薄膜のMOVPE成長2008
- Author(s)
  秩父重英
- Organizer
  2008年春季応用物理学会
- Place of Presentation
  千葉、日本
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Optical properties of nearly stacking-fault-free m-plane (In, Ga)N films grown by metalorganic vapor phase epitaxy on low defect density free-standing substrates2008
- Author(s)
  秩父重英
- Organizer
  50th Electronic Materials Conference
- Place of Presentation
  California, USA
- Year and Date
  2008-06-27
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Impacts of point defects on the recombination dynamics and emission efficiency of (Al,Ga)N2008
- Author(s)
  S. F. Chichibu, T. Onuma, and A. Uedono
- Organizer
  The Fourth Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)
- Place of Presentation
  Sendai, Japan
- Year and Date
  2008-05-23
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] ZnO系半導体の発光寿命と結晶次陥の関係2008
- Author(s)
  秩父重英
- Organizer
  第42回応用物理学会スクール(2008年春季)「ZnO系半導体の結晶成長、デバイスの基礎」
- Place of Presentation
  日大船橋校舎
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19360137
[Presentation] 塩基性鉱化剤を用いた安熱合成GaNエピタキシャル層の講造おおび発光特性2008
- Author(s)
  秩父重英
- Organizer
  2008年春季応用物理学会
- Place of Presentation
  千葉、日本
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Optical Properties of Nearly Stacking-Fault-Free m-plane GaN and InGaN Films Grown by Metalorganic Vapor Phase Epitaxy on Low Defect Density Free-Standing Substrates2008
- Author(s)
  秩父重英
- Organizer
  International Workshop on Nitride Semiconductors
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Impacts of point defects on the recombination dynamics and emission efficiency of (Al.Ga)N2008
- Author(s)
  秩父重英
- Organizer
  The Fourth Asian Conference on Crystal Growth and Crystal Technology
- Place of Presentation
  Sendai, Japan
- Year and Date
  2008-05-23
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] MOVPE of nearly stacking-fault-free m-plane (In,Ga)N films on low defect density free-standing GaN substrates2008
- Author(s)
  秩父重英
- Organizer
  27th Electronic Materials Symposium
- Place of Presentation
  修善寺, 静岡
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Raditive and nonradiative processes in (Al,In,Ga)N alloy films2007
- Author(s)
  S. F. Chichibu, A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, U. K. Mishra, S. Nakamura, S. Yamaguchi, S. Kamiyama, H. Amano, I. Akasaki, J. Han, and T. Sota
- Organizer
  14th Semiconducting and Insulating Materials Conference
- Place of Presentation
  Fayetteville, Arkansas, USA
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] AIN, GaNにおける貫通転位密度と点欠陥密度の関係2007
- Author(s)
  秩父重英
- Organizer
  2007年秋季応用物理学会
- Place of Presentation
  北海道、日本
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Correlation between the ciolet luminescence intensity and defect density in ALN epilayers grown by NH3 source molecular beam epitaxy2007
- Author(s)
  S. F, Chichibu
- Organizer
  The 34th International Symposium on Compound Semiconductors (ISCS 2007)
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2007-11-17
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 陽電子消滅を用いた窒化物光半導体の空孔型欠陥の検出2007
- Author(s)
  上殿明良・秩父重英
- Organizer
  応用物理学会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 非極性InGaN量子井戸の空間分解CL評価2007
- Author(s)
  秩父重英
- Organizer
  第3回ナノマテリアル解析セミナー
- Place of Presentation
  つくば国際会議場エポカル
- Year and Date
  2007-09-14
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Homoepitaxial growth of nearly stacking-fault-free m-plane (In, Ga)N films by metalorganic vapor phase using low defect density free-standing substrates2007
- Author(s)
  S. F, Chichibu
- Organizer
  The 7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, Necada, USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Correlation between Al cacancy concentration and intensities of deep cathodoluminescence bands in AIN epilayers grown by NH3-source molecular beam epitaxy2007
- Author(s)
  S. F, Chichibu
- Organizer
  26th Electronic Materials Symposium
- Place of Presentation
  Shiga, Japan
- Year and Date
  2007-07-06
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Origin of edfect-insensitive emission probability in (Al, In, Ga)N alloy films containing In2007
- Author(s)
  S. F, Chichibu
- Organizer
  The 7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, Necada, USA
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] Radiative and nonradiative processes in (Al, In, Ga)N alloy films2007
- Author(s)
  S. F, Chichibu
- Organizer
  14th Smiconducting and Insulating Materials Conference (SIMC-XIV)
- Place of Presentation
  Fayetteville, Arkansas, USA
- Year and Date
  2007-04-18
- Data Source
  KAKENHI-PLANNED-18069001
[Presentation] 高輝度表面入射型パルス電子銃を搭載した時間空間分解カソードルミネッセンス装置によるHVPE成長GaN基板の評価
- Author(s)
  石川陽一,古澤健太郎,田代公則,羽豆耕治,長尾哲,池田宏隆,藤戸健史,秩父重英
- Organizer
  2013年春季応用物理学会
- Place of Presentation
  神奈川工大, 神奈川県
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Effects of Si-doping on the near-band-edge emission dynamics of Al0.6Ga0.4N epilayers grown on AlN templates by metalorganic vapor phase epitaxy
- Author(s)
  S. F. Chichibu, H. Miyake, K. Hazu, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hiramatsu, A. Uedono
- Organizer
  The IUMRS International Conference in Asia 2013 (IUMRS-ICA-2013)
- Place of Presentation
  Bangalore, India
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence studies on AlN epitaxial films grown on low dislocation density bulk AlN substrates prepared by the physical vapor transport method
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Furusawa, K. Hazu, S. Mita, J. Xie, R. Collazo, Z. Sitar
- Organizer
  The 10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, DC,USA
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Local carrier dynamics in freestanding GaN substrates grown by hydride vapor phase epitaxy studied using the spatio-time-resolved cathodoluminescence technique
- Author(s)
  K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] III-V族窒化物半導体の欠陥評価最前線
- Author(s)
  秩父重英,上殿明良
- Organizer
  応用物理学会　シリコンテクノロジー分科会第148回研究集会
- Place of Presentation
  グランキューブ大阪（大阪国際会議場）
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Si添加Al0.6Ga0.4N混晶薄膜の時間分解カソードルミネッセンス評価
- Author(s)
  羽豆耕治,石川陽一,田代公則,古澤健太郎,三宅秀人,平松和政,上殿明良,秩父重英
- Organizer
  2013年春季応用物理学会
- Place of Presentation
  神奈川工大, 神奈川県
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] m面GaN基板上にNH3-MBE成長したAl0.25Ga0.75Nの時間空間分解CL評価-GaN基板のチルトモゼイクが発光特性に及ぼす影響-
- Author(s)
  秩父重英,羽豆耕治,石川陽一,田代公則,古澤健太郎,長尾哲,藤戸健史
- Organizer
  2012年秋季応用物理学会
- Place of Presentation
  愛媛大学,愛媛県
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Local carrier dynamics in freestanding GaN substrates grown by hydride vapor phase epitaxy studied using the spatio-time-resolved cathodoluminescence technique
- Author(s)
  K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, K. Fujito, A. Uedono, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 水熱合成ZnOターゲットを用いたZnO薄膜のヘリコン波励起プラズマスパッタエピタキシー(2)
- Author(s)
  古澤健太郎,中沢駿仁,石川陽一,田代公則,秩父重英
- Organizer
  2014年春季応用物理学会
- Place of Presentation
  相模原市
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 高輝度表面入射型パルス電子銃を搭載した時間空間分解カソードルミネッセンス装置によるHVPE成長GaN基板の評価
- Author(s)
  石川陽一,古澤健太郎,田代公則,羽豆耕治,長尾哲,池田宏隆,藤戸健史,秩父重英
- Organizer
  2013年春季応用物理学会
- Place of Presentation
  神奈川工大,神奈川県
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence studies on local exciton dynamics of a freestanding GaN substrate grown by hydride vapor phase epitaxy
- Author(s)
  K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu
- Organizer
  The 40th International Symposium on Compound Semiconductors (ISCS 2013)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 表面入射型パルス光電子銃を搭載した時間空間分解カソードルミネッセンス装置によるワイドバンドギャップ半導体の評価
- Author(s)
  古澤健太郎,石川陽一,田代公則,羽豆耕治,秩父重英
- Organizer
  2012年秋季応用物理学会
- Place of Presentation
  愛媛大学,愛媛県
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] AlNテンプレート上Si添加高AlNモル分率AlxGa1-xN多重量子井戸の時間空間分解陰極線蛍光分光評価
- Author(s)
  秩父重英,石川陽一,古澤健太郎,田代公則,大友友美,三宅秀人,平松和政
- Organizer
  2014年春季応用物理学会
- Place of Presentation
  相模原市
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] m面GaN基板上にNH3-MBE成長したAl0.25Ga0.75Nの時間空間分解CL評価-GaN基板のチルトモゼイクが発光特性に及ぼす影響-
- Author(s)
  秩父重英,羽豆耕治,石川陽一,田代公則,古澤健太郎,長尾哲,藤戸健史
- Organizer
  2012年秋季応用物理学会
- Place of Presentation
  愛媛大学,愛媛県
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Band alignments and lateral transport properties of Nb-doped (100) rutile- and (001) anatase-TiO2 / (0001) GaN heteroepitaxial structures
- Author(s)
  K. Hazu, T. Ohtomo, T. Nakayama, A. Tanaka, and S. F. Chichibu
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 表面入射型パルス光電子銃を搭載した時間空間分解カソードルミネッセンス装置によるワイドバンドギャップ半導体の評価
- Author(s)
  古澤健太郎,石川陽一,田代公則,羽豆耕治,秩父重英
- Organizer
  2012年秋季応用物理学会
- Place of Presentation
  愛媛大学,愛媛県
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy
- Author(s)
  S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), ECS222nd
- Place of Presentation
  Hawaii, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  The Fourth International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Invited
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Impacts of point defects on the photoluminescence lifetime of Si-doped Al0.6Ga0.4N epilayers grown on an AlN template
- Author(s)
  S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Miyake, K. Hiramatsu, and A. Uedono
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 「ワイドバンドギャップ窒化物・酸化物半導体の発光寿命と点欠陥の関係」
- Author(s)
  秩父重英,上殿明良
- Organizer
  ワイドギャップ半導体光・電子デバイス162委員会 10月定期研究会
- Place of Presentation
  名城大学
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Local emission dynamics in and around the sub-surface basal-plane stacking faults in GaN studied by the spatio-time-resolved cathodoluminescence method using a front-excitation photoelectron gun
- Author(s)
  K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu
- Organizer
  The 10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, DC,USA
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] 時間空間分解カソードルミネッセンス法による単一積層欠陥回りでの発光ダイナミクス解析
- Author(s)
  古澤健太郎,石川陽一,田代公則,羽豆耕治,長尾哲,池田宏隆,藤戸健史,秩父重英
- Organizer
  2013年秋季応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Local carrier dynamics in and around the sub-surface stacking faults in GaN studied using spatio-time-resolved cathodoluminescence equipped with a front-excitation configuration femtosecond pulsed photoelectron gun
- Author(s)
  K. Furusawa, Y. Ishikawa, M. Tashiro, K. Hazu, S. Nagao, H. Ikeda, K. Fujito, and S. F. Chichibu
- Organizer
  2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence studies on freestanding GaN substrates grown by hydride vapor phase epitaxy
- Author(s)
  S. F. Chichibu, Y. Ishikawa, K. Hazu, M. Tashiro, K. Furusawa, H. Namita, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012), ECS222nd
- Place of Presentation
  Hawaii, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Influences of point defects on the emission dynamics of wide bandgap nitride and oxide semiconductors
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  2013 Japan Society of Applied Physics - Materials Research Society Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] III-V族窒化物半導体の欠陥評価最前線
- Author(s)
  秩父重英,上殿明良
- Organizer
  応用物理学会　シリコンテクノロジー分科会第148回研究集会
- Place of Presentation
  グランキューブ大阪（大阪国際会議場）
- Invited
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] 六方晶BN微結晶の時間・空間分解カソードルミネッセンス評価
- Author(s)
  石川陽一,田代公則,羽豆耕治,古澤健太郎,小南裕子,原和彦,秩父重英
- Organizer
  2012年秋季応用物理学会
- Place of Presentation
  愛媛大学,愛媛県
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] Effects of Si-doping on the recombination dynamics of excitons in AlGaN alloys studied by time-resolved cathodoluminescence
- Author(s)
  S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Hazu, K. Furusawa, K. Hiramatsu, A. Uedono
- Organizer
  European Materials Research Society, 2013 Spring Meeting, Session L: Group III nitrides
- Place of Presentation
  Strasbourg, France
- Invited
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Spatio-time-resolved cathodoluminescence study using a femtosecond focused electron beam on freestanding GaN substrates grown by hydride vapor phase epitaxy
- Author(s)
  S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, S. Nagao, K. Fujito, and A. Uedono
- Organizer
  The 39th International Symposium on Compound Semiconductors (ISCS 2012)
- Place of Presentation
  Santa Barbara, CA, USA
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] GaNと格子整合するScxAlyGa1-x-yNの自発分極と電子構造の第一原理計算
- Author(s)
  島田和宏,秩父重英,秦雅彦,高田朋幸,佐沢洋幸,宗田孝之
- Organizer
  2012年秋季応用物理学会
- Place of Presentation
  愛媛大学,愛媛県
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Impacts of point defects on the photoluminescence lifetime of Si-doped Al0.6Ga0.4N epilayers grown on an AlN template
- Author(s)
  S. F. Chichibu, K. Hazu, Y. Ishikawa, M. Tashiro, H. Miyake, K. Hiramatsu, and A. Uedono
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23656206
[Presentation] 気相成長AlN基板上AlNエピタキシャル層の時間空間分解カソードルミネッセンス計測
- Author(s)
  秩父重英,石川陽一,田代公則,古澤健太郎,羽豆耕治,J.Xie,三田清二,R.Collazo,Z.Sitar
- Organizer
  2013年秋季応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Transport and emission properties of Nb-doped n++-type (001) anatase-TiO2 / Mg-doped p-type (0001) GaN heteroepitaxial structures
- Author(s)
  M. Yamagishi, K. Hazu, T. Ohtomo, Y. Ishikawa, K. Furusawa, T. Nakayama, and S. F. Chichibu
- Organizer
  The 10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington, DC,USA
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] ZnO単結晶基板上AlInGaN薄膜の屈折率分散の測定
- Author(s)
  羽豆耕治,加賀谷宗仁,秩父重英
- Organizer
  2012年秋季応用物理学会
- Place of Presentation
  愛媛大学,愛媛県
- Data Source
  KAKENHI-PROJECT-22246037
[Presentation] Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys
- Author(s)
  S. F. Chichibu and A. Uedono
- Organizer
  The Fourth International Symposium on Growth of III-Nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Invited
- Data Source
  KAKENHI-PROJECT-22246037

1. UEDONO Akira (20213374)

# of Collaborated Projects: 7 results

# of Collaborated Products: 74 results
2. Kojima Kazunobu (30534250)

# of Collaborated Projects: 7 results

# of Collaborated Products: 183 results
3. 嶋紘平 (40805173)

# of Collaborated Projects: 4 results

# of Collaborated Products: 74 results
4. SOTA Takayuki (90171371)

# of Collaborated Projects: 3 results

# of Collaborated Products: 12 results
5. SUGIYAMA Mutsumi (40385521)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
6. HAZU Kouji (30367057)

# of Collaborated Projects: 2 results

# of Collaborated Products: 89 results
7. SUEMASU Takashi (40282339)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
8. 原和彦 (80202266)

# of Collaborated Projects: 2 results

# of Collaborated Products: 17 results
9. OSHIYAMA Atsushi (80143361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. UCHIDA Kazuyuki (10393810)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. SHIRAISHI Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. FURUSAWA Kentaro (40392104)

# of Collaborated Projects: 1 results

# of Collaborated Products: 28 results
13. HASEGAWA Fumio (70143170)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
14. AKIMOTO Katsuhiro (90251040)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. Yoshinari Awaji (50358876)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
16. TANIGUCHI Takashi (80354413)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 山崎芳樹 (20730352)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
18. 中須大蔵 (40801254)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
19. 吉田悠来 (50573036)

# of Collaborated Projects: 1 results

# of Collaborated Products: 12 results
20. 町田友樹 (00376633)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 山田貴壽 (30306500)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 宮川仁 (40552667)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 石橋章司 (30356448)

# of Collaborated Projects: 1 results

# of Collaborated Products: 19 results
24. 奥村宏典 (80756750)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. NAKAI Hiroshi

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
26. KANGAWA Yoshihiro

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
27. 正直花奈子

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Chichibu Shigefusa 秩父 重英

CHICHIBU Shigefusa 秩父 重英

秩父 重英 チチブ シゲフサ

Research Projects

Research Products

Co-Researchers

グラファイト型層状窒化ホウ素の気相合成と光電子素子材料としての物性解明Principal Investigator

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六方晶および閃亜鉛鉱構造窒化ホウ素の高温気相エピタキシャル成長と導電性制御Principal Investigator

Principal Investigator

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A study of the activation mechanism of implanted impurities and control of point defect in group III nitride

Principal Investigator

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Review Section

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Modification of the bandgap of hexagonal BN and deep-ultraviolet luminescence dynamics of excitons in themPrincipal Investigator

Principal Investigator

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Synthesis of high quality single crystals for sience of Boron Nitride

Principal Investigator

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LED-based optical wireless communications in the solar-blind band

Principal Investigator

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Developement and application of spatio-time-resolved cathodoluminescence for wide bandgap nanostructuresPrincipal Investigator

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Spatio-time-resolved cathodoluminescence studies on singularity crystalsPrincipal Investigator

Principal Investigator

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Luminescence dynamics of BN exhibiting large excitonic effects in the deep ultraviolet wavelength regionPrincipal Investigator

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Realization of high-power and high-efficiency light-emitting devices based on AlInN

Principal Investigator

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Development of a spatio-time-resolved cathodoluminescence spectroscopy technique applicable for wide bandgap semiconductors through the generation and focusing of high-brightness femtosecond pulsed photoelectron beamsPrincipal Investigator

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Helicon-wave-excited-plasma sputtering epitaxy of polariton laser structures for room temperature operationPrincipal Investigator

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Epitaxial growth and fabrication of microcavities by the helicon-wave-excited-plasma sputtering methodPrincipal Investigator

Principal Investigator

Chichibu Shigefusa 秩父重英

CHICHIBU Shigefusa 秩父重英

秩父重英チチブシゲフサ

[Book] 2020版薄膜作製応用ハンドブック2020

[Book] 2020版薄膜作製応用ハンドブック2020