Makino Takahiro 牧野高紘

… Alternative Names

Researcher Number	80549668
Affiliation (Current)	2022: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所量子機能創製研究センター, 主幹研究員
Affiliation (based on the past Project Information) *help	2017 – 2021: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 主任研究員(定常) 2015: 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 研究員 2015: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究員 2013 – 2014: 独立行政法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 研究員 2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究職 2010 – 2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 博士研究員
Review Section/Research Field	Principal Investigator General applied physics / Applied physics, general Except Principal Investigator Particle/Nuclear/Cosmic ray/Astro physics / Electron device/Electronic equipment / Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator 耐放射線性 / SiC / シングルイベント / パワーデバイス / SETパルス / 論理LSI / イオン照射 / SOI / ソフトエラー / 炭化ケイ素 … More Except Principal Investigator シリコンカーバイド半導体 / 極限環境エレクトロニクス / CMOS集積回路 / 電子デバイス / 電子デバイス・集積回路 / 暗黒物質 / 半導体検出器 / 軽い暗黒物質 / ワイドギャップ半導体 / 低雑音集積回路 / ダークマター / 低質量ダークマター / 耐放射線 / シリコンカーバイド / MOSFET / 耐高温動作 / 廃炉技術 / 電子デバイス・電子機器 / 極限環境 / 耐放射線デバイス / 品質管理 / 機器・人間の信頼性 / 低炭素社会 / 放射線 / 量子ビーム産業応用 / リスク評価 Less

Research on Silicon-Carbide IoT Platform for Harsh Environment Applications
- Principal Investigator
  
  黒木伸一郎
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Hiroshima University
高信頼性LSIの開発コスト削減に向けたソフトエラー耐性スクリーニングの実現
- Principal Investigator
  
  小林大輔
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Japan Aerospace EXploration Agency
Study of ion induced charge collection process in SiC MOSFETsPrincipal Investigator
- Principal Investigator
  
  MAKINO Takahiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  General applied physics
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
Research on Silicon Carbide Harsh Environment Electronics
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Single Event Burnout Mechanisms in SiC devicesPrincipal Investigator
- Principal Investigator
  
  Makino Takahiro
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  General applied physics
- Research Institution
  Japan Atomic Energy Agency
Development of wide gap semiconductor pixel detector for light dark matter search
- Principal Investigator
  
  Tanaka Manobu
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Particle/Nuclear/Cosmic ray/Astro physics
- Research Institution
  High Energy Accelerator Research Organization
Estimation of Single Event Transient Pulses in Logic Cells from a Single TransistorPrincipal Investigator
- Principal Investigator
  
  MAKINO Takahiro
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied physics, general
- Research Institution
  Japan Atomic Energy Agency

All 2021 2020 2019 2018 2017 2016 2015 2013 2011 2010 Other

All Journal Article Presentation

[Journal Article] Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer2019
- Author(s)
  Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Akinori Takeyama, Takeshi Ohshima and Shin-Ichiro Kuroki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: 8 Pages: 081007-081007
- DOI
  10.7567/1347-4065/ab2dab
- NAID
  210000156569
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2019
- Author(s)
  Tomoyasu Ishii, Shin-Ichiro Kuroki, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 613-616
- DOI
  10.4028/www.scientific.net/msf.963.613
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2019
- Author(s)
  Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 726-729
- DOI
  10.4028/www.scientific.net/msf.963.726
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2019
- Author(s)
  Jun Inoue, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 837-840
- DOI
  10.4028/www.scientific.net/msf.963.837
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2018
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M.Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 971-974
- DOI
  10.4028/www.scientific.net/msf.924.971
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2018
- Author(s)
  J. Kajihara, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 423-427
- DOI
  10.4028/www.scientific.net/msf.924.423
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2017
- Author(s)
  S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 669-672
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H‐SiC Schottky Barrier Diodes2016
- Author(s)
  T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 印刷中
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790076
[Journal Article] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes2015
- Author(s)
  Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima
- Journal Title
  
  Material Science Forum
  
  Volume: 821-823 Pages: 575-578
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790076
[Journal Article] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes2015
- Author(s)
  T. Makino, M. Deki, S. Onoda, N. Hoshino, H. Tsuchida, and T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 821-823 Pages: 575-578
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790076
[Journal Article] Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes2013
- Author(s)
  Takahiro Makino, Manato Deki, Naoya Iwamoto, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Toshio Hirao, and Takeshi Ohshima
- Journal Title
  
  IEEE TRANSACTIONS ON NUCLEAR SCIENCE
  
  Volume: 60 Pages: 2647-2650
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25790076
[Journal Article] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2011
- Author(s)
  T.Makino, et al.
- Journal Title
  
  Proceedings of The 9th International Workshop on Radiation Effects on □Semiconductor Devices for Space Applications
  
  Pages: 169-172
- Data Source
  KAKENHI-PROJECT-22760055
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也, 西垣内健汰, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 19 回研究会　「ワイドバンドギャップ半導体を用いた極限環境エレクトロニクス」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド（SiC）極限環境エレクトロニクスの研究開発：原子炉廃炉対応から医療応用まで2021
- Author(s)
  黒木伸一郎, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  文部科学省共同利用・共同研究拠点生体医歯工学共同研究拠点　令和2年度成果報告会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響2020
- Author(s)
  武山昭憲，清水奎吾, 牧野高紘, 山崎雄一, 大島武, 黒木伸一郎, 田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC 短チャネル n/p MOSFETs における閾値の評価2020
- Author(s)
  志摩拓真，前田智徳，石川誠治，瀬崎洋，牧野高紘, 大島武, 黒木伸一郎
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Radiation hardness of 4H-SiC JFETs in MGy dose ranges,” The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)2019
- Author(s)
  A. Takeyama, K. Shimizu, T. Makino, Y. Yamazaki, S. Kuroki, Y. Tanaka, T. Ohshima
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC-NMOSFETs におけるガンマ線誘起移動度増加現象とその増加機構2019
- Author(s)
  村岡幸輔，瀬崎洋，石川誠治，前田知徳，牧野高紘，大島武，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] ノーマリーオフ型 4H-SiC JFET のガンマ線耐性2019
- Author(s)
  武山昭憲，清水奎吾，牧野高紘，山﨑雄一，大島武，黒木伸一郎，田中保宣
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 短チャネル SiC nMOSFET の温度特性評価2019
- Author(s)
  石井友康，瀬崎洋，石川誠治，前田智徳，牧野高紘，大島武, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] ノーマリーオフ型4H-SiC JFETのガンマ線照射効果2019
- Author(s)
  武山昭憲、清水奎吾、牧野高紘、山﨑雄一、大島武、黒木伸一郎、田中保宣
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC による耐放射線エレクトロニクス技術開発2019
- Author(s)
  田中保宣，清水奎吾，小野田忍，武山昭憲，牧野高紘，大島武，目黒達也，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 量産SiC-MOSFETにおける超高エネルギーイオン誘起破壊耐性の評価2019
- Author(s)
  牧野　高紘
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17K05111
[Presentation] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2018
- Author(s)
  T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Radiation Hardened Silicon Carbide Electronics2018
- Author(s)
  K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, T. Makino, T. Ohshima, S.-I. Kuroki
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Short-channel 4H-SiC trench MOSFETs for harsh environment electronics2018
- Author(s)
  T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs2018
- Author(s)
  Takahiro Makino, Shuhei Takano, Shinsuke Harada, Yasuto Hijikata, and Takeshi Ohshima
- Organizer
  IEEE Nuclear and Space Radiation Effects Conference 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05111
[Presentation] Effects of High Gamma-Ray Radiation on 3C-SiC nMOSFETs2018
- Author(s)
  Shin-Ichiro Kuroki, Kohei Nagano, Tatsuya Meguro, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, and Yasunori Tanaka
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2018
- Author(s)
  Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Trench MOSFETs による短チャネル効果の抑制効果2018
- Author(s)
  石井友康、黒木伸一郎、瀬崎洋、石川誠治、前田智徳、牧野高紘、大島武、Mikael Ostling 、Carl-Mikael Zetterling
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2018
- Author(s)
  J. Inoue, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T Ohshima, M. Ostling, and C-M. Zetterling
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2017
- Author(s)
  J. Kajihara, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 高周波CMOSインバータに向けた4H-SiCトレンチpMOSFETsの研究2017
- Author(s)
  井上純、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Research on 400°C Thermal Stability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications2017
- Author(s)
  Vuong Van Cuong, Milantha De Silva, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Ba導入nMOSFETsに対するBTS試験およびガンマ線照射2017
- Author(s)
  村岡幸輔，瀬崎洋，石川誠治，前田知徳，牧野高紘，大島武，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2017
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 極限環境エレクトロニクスのための4H-SiC nMOSFETs セルフアラインプロセス2017
- Author(s)
  黒瀬達也、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC pMOSFETsの高温特性及びガンマ線曝露効果2017
- Author(s)
  梶原純, 黒木伸一郎, 瀬崎洋, 石川誠治，前田知徳, 牧野高紘, 大島武, Mikael Ostling, and Carl-Mikael Zetterling
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiCパワーMOSFETにおける重イオン誘起電荷収集のデバイス構造依存性2017
- Author(s)
  高野修平、牧野高紘、原田信介、児島一聡、土方泰斗、大島武
- Organizer
  第78回　応用物理学会　秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05111
[Presentation] NbNiシリサイドS/D 3C-SiC nMOSFETsと高ガンマ線照射特性2017
- Author(s)
  永野耕平、目黒達也、武山昭憲、牧野高紘、大島武、田中保宣、黒木伸一郎
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] トレンチゲート型SiC-MOSFETにおける放射線誘起破壊現象の物理過程探索と耐性評価2017
- Author(s)
  高野修平, 牧野高紘, 原田信介, 土方泰斗, 大島武
- Organizer
  先進パワー半導体分科会　第4回講演会
- Data Source
  KAKENHI-PROJECT-17K05111
[Presentation] Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H‐SiC Schottky Barrier Diodes2015
- Author(s)
  T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima
- Organizer
  16th International Conference on Silicon Carbide and Related Materials (ICSCRM2015)
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25790076
[Presentation] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2010
- Author(s)
  T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, H. Ikeda and K. Hirose
- Organizer
  The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications(RASEDA)
- Place of Presentation
  Takasaki
- Data Source
  KAKENHI-PROJECT-22760055
[Presentation] Digital Single Event Transient Pulse-Widths estimation in Logic Cells from Heavy-Ion-Induced Transient Currents in a Single MOSFET2010
- Author(s)
  T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, H. Ikeda, and K. Hirose
- Organizer
  IEEE Nuclear and space radiation effects conference
- Place of Presentation
  Denver
- Data Source
  KAKENHI-PROJECT-22760055
[Presentation] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2010
- Author(s)
  T.Makino, et al.
- Organizer
  The 9th International Workshop on Radiation Effects on □Semiconductor Devices for Space Applications (RASEDA-9)
- Place of Presentation
  高崎市高崎シティギャラリー
- Data Source
  KAKENHI-PROJECT-22760055
[Presentation] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes
- Author(s)
  Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima
- Organizer
  European Conference on Silicon Carbide & Related Materials
- Place of Presentation
  World Trade Center, Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25790076

1. OHSHIMA Takeshi (50354949)

# of Collaborated Projects: 3 results

# of Collaborated Products: 32 results
2. Kuroki Shin-Ichiro (70400281)

# of Collaborated Projects: 2 results

# of Collaborated Products: 32 results
3. Tanaka Manobu (00222117)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. KANEKO Junichi (90333624)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. SHIMAOKA Takehiro (80650241)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. MIUCHI Kentaro (80362440)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 田中保宣 (20357453)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
8. 児島一聡 (40371041)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 武山昭憲 (50370424)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
10. 小林大輔 (90415894)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Makino Takahiro 牧野 高紘

MAKINO Takahiro 牧野 高紘

MAKINO Takakahiro 牧野 高紘

Research Projects

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Co-Researchers

Research on Silicon-Carbide IoT Platform for Harsh Environment Applications

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高信頼性LSIの開発コスト削減に向けたソフトエラー耐性スクリーニングの実現

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Study of ion induced charge collection process in SiC MOSFETsPrincipal Investigator

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Research on Silicon Carbide Harsh Environment Electronics

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Single Event Burnout Mechanisms in SiC devicesPrincipal Investigator

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Development of wide gap semiconductor pixel detector for light dark matter search

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Estimation of Single Event Transient Pulses in Logic Cells from a Single TransistorPrincipal Investigator

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[Journal Article] Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer2019

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[Journal Article] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2019

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[Journal Article] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2019

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[Journal Article] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2019

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[Journal Article] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2018

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[Journal Article] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2018

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Makino Takahiro 牧野高紘

MAKINO Takahiro 牧野高紘

MAKINO Takakahiro 牧野高紘