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Makino Takahiro  牧野 高紘

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MAKINO Takahiro  牧野 高紘

MAKINO Takakahiro  牧野 高紘

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Researcher Number 80549668
Affiliation (Current) 2022: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 量子機能創製研究センター, 主幹研究員
Affiliation (based on the past Project Information) *help 2017 – 2021: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 主任研究員(定常)
2015: 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究員
2015: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究員
2013 – 2014: 独立行政法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究員
2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究職
2010 – 2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 博士研究員
Review Section/Research Field
Principal Investigator
General applied physics / Applied physics, general
Except Principal Investigator
Particle/Nuclear/Cosmic ray/Astro physics / Electron device/Electronic equipment / Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 21060:Electron device and electronic equipment-related
Keywords
Principal Investigator
耐放射線性 / SiC / シングルイベント / パワーデバイス / SETパルス / 論理LSI / イオン照射 / SOI / ソフトエラー / 炭化ケイ素 … More / 放射線 / ショットキーバリアダイオード / Single Event Burnout / MOSFET … More
Except Principal Investigator
シリコンカーバイド半導体 / 極限環境エレクトロニクス / CMOS集積回路 / 電子デバイス / 電子デバイス・集積回路 / 暗黒物質 / 半導体検出器 / 軽い暗黒物質 / ワイドギャップ半導体 / 低雑音集積回路 / ダークマター / 低質量ダークマター / 耐放射線 / シリコンカーバイド / MOSFET / 耐高温動作 / 廃炉技術 / 電子デバイス・電子機器 / 極限環境 / 耐放射線デバイス / 品質管理 / 機器・人間の信頼性 / 低炭素社会 / 放射線 / 量子ビーム産業応用 / リスク評価 Less
  • Research Projects

    (7 results)
  • Research Products

    (46 results)
  • Co-Researchers

    (10 People)
  •  Research on Silicon-Carbide IoT Platform for Harsh Environment Applications

    • Principal Investigator
      黒木 伸一郎
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Hiroshima University
  •  高信頼性LSIの開発コスト削減に向けたソフトエラー耐性スクリーニングの実現

    • Principal Investigator
      小林 大輔
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Japan Aerospace EXploration Agency
  •  Study of ion induced charge collection process in SiC MOSFETsPrincipal Investigator

    • Principal Investigator
      MAKINO Takahiro
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      General applied physics
    • Research Institution
      National Institutes for Quantum and Radiological Science and Technology
  •  Research on Silicon Carbide Harsh Environment Electronics

    • Principal Investigator
      Kuroki Shin-Ichiro
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Hiroshima University
  •  Single Event Burnout Mechanisms in SiC devicesPrincipal Investigator

    • Principal Investigator
      Makino Takahiro
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      General applied physics
    • Research Institution
      Japan Atomic Energy Agency
  •  Development of wide gap semiconductor pixel detector for light dark matter search

    • Principal Investigator
      Tanaka Manobu
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Particle/Nuclear/Cosmic ray/Astro physics
    • Research Institution
      High Energy Accelerator Research Organization
  •  Estimation of Single Event Transient Pulses in Logic Cells from a Single TransistorPrincipal Investigator

    • Principal Investigator
      MAKINO Takahiro
    • Project Period (FY)
      2010 – 2011
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Applied physics, general
    • Research Institution
      Japan Atomic Energy Agency

All 2021 2020 2019 2018 2017 2016 2015 2013 2011 2010 Other

All Journal Article Presentation

  • [Journal Article] Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer2019

    • Author(s)
      Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Akinori Takeyama, Takeshi Ohshima and Shin-Ichiro Kuroki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: 8 Pages: 081007-081007

    • DOI

      10.7567/1347-4065/ab2dab

    • NAID

      210000156569

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2019

    • Author(s)
      Tomoyasu Ishii, Shin-Ichiro Kuroki, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 613-616

    • DOI

      10.4028/www.scientific.net/msf.963.613

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2019

    • Author(s)
      Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 726-729

    • DOI

      10.4028/www.scientific.net/msf.963.726

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2019

    • Author(s)
      Jun Inoue, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
    • Journal Title

      Materials Science Forum

      Volume: 963 Pages: 837-840

    • DOI

      10.4028/www.scientific.net/msf.963.837

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2018

    • Author(s)
      T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M.Ostling, and C.-M. Zetterling
    • Journal Title

      Mat. Sci. Forum

      Volume: 924 Pages: 971-974

    • DOI

      10.4028/www.scientific.net/msf.924.971

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2018

    • Author(s)
      J. Kajihara, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Journal Title

      Mat. Sci. Forum

      Volume: 924 Pages: 423-427

    • DOI

      10.4028/www.scientific.net/msf.924.423

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2017

    • Author(s)
      S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Journal Title

      Mat. Sci. Forum

      Volume: 897 Pages: 669-672

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Journal Article] Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H‐SiC Schottky Barrier Diodes2016

    • Author(s)
      T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima
    • Journal Title

      Mater. Sci. Forum

      Volume: 印刷中

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Journal Article] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes2015

    • Author(s)
      Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima
    • Journal Title

      Material Science Forum

      Volume: 821-823 Pages: 575-578

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Journal Article] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes2015

    • Author(s)
      T. Makino, M. Deki, S. Onoda, N. Hoshino, H. Tsuchida, and T. Ohshima
    • Journal Title

      Mater. Sci. Forum

      Volume: 821-823 Pages: 575-578

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Journal Article] Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes2013

    • Author(s)
      Takahiro Makino, Manato Deki, Naoya Iwamoto, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Toshio Hirao, and Takeshi Ohshima
    • Journal Title

      IEEE TRANSACTIONS ON NUCLEAR SCIENCE

      Volume: 60 Pages: 2647-2650

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Journal Article] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2011

    • Author(s)
      T.Makino, et al.
    • Journal Title

      Proceedings of The 9th International Workshop on Radiation Effects on □Semiconductor Devices for Space Applications

      Pages: 169-172

    • Data Source
      KAKENHI-PROJECT-22760055
  • [Presentation] SiC 耐放射線イメージセンサの研究開発2021

    • Author(s)
      黒木 伸一郎, 目黒 達也, 西垣内 健汰, 武山 昭憲, 牧野 高紘, 大島 武,田中 保宣
    • Organizer
      公益社団法人 応用物理学会 先進パワー半導体分科会 第 19 回研究会 「ワイドバンドギャップ半導体を用いた極限環境エレクトロニクス」
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] シリコンカーバイド(SiC)極限環境エレクトロニクスの研究開発:原子炉廃炉対応から医療応用まで2021

    • Author(s)
      黒木 伸一郎, 目黒 達也, Vuong Van Cuong, 武山 昭憲, 牧野 高紘, 大島 武,田中 保宣
    • Organizer
      文部科学省 共同利用・共同研究拠点 生体医歯工学共同研究拠点 令和2年度成果報告会
    • Invited
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響2020

    • Author(s)
      武山 昭憲,清水 奎吾, 牧野 高紘, 山崎 雄一, 大島 武, 黒木 伸一郎, 田中 保宣
    • Organizer
      公益社団法人 応用物理学会 先進パワー半導体分科会 第 7回講演会
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] 4H-SiC 短チャネル n/p MOSFETs における閾値の評価2020

    • Author(s)
      志摩 拓真,前田 智徳 ,石川 誠治,瀬崎 洋,牧野 高紘, 大島 武, 黒木 伸一郎
    • Organizer
      公益社団法人 応用物理学会 先進パワー半導体分科会 第 7回講演会
    • Data Source
      KAKENHI-PROJECT-20H00252
  • [Presentation] Radiation hardness of 4H-SiC JFETs in MGy dose ranges,” The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)2019

    • Author(s)
      A. Takeyama, K. Shimizu, T. Makino, Y. Yamazaki, S. Kuroki, Y. Tanaka, T. Ohshima
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] SiC-NMOSFETs におけるガンマ線誘起移動度増加現象とその増加機構2019

    • Author(s)
      村岡幸輔,瀬崎洋,石川誠治,前田知徳,牧野高紘,大島武,黒木伸一郎
    • Organizer
      応用物理学会 先進パワー半導体分科会 第6回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] ノーマリーオフ型 4H-SiC JFET のガンマ線耐性2019

    • Author(s)
      武山 昭憲,清水 奎吾,牧野 高紘,山﨑 雄一,大島 武,黒木 伸一郎,田中 保宣
    • Organizer
      応用物理学会 先進パワー半導体分科会 第6回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 短チャネル SiC nMOSFET の温度特性評価2019

    • Author(s)
      石井友康,瀬崎洋,石川誠治,前田智徳,牧野高紘,大島武, 黒木伸一郎
    • Organizer
      応用物理学会 先進パワー半導体分科会 第6回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] ノーマリーオフ型4H-SiC JFETのガンマ線照射効果2019

    • Author(s)
      武山 昭憲、清水 奎吾、牧野 高紘、山﨑 雄一、大島 武、黒木 伸一郎、田中 保宣
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] SiC による耐放射線エレクトロニクス技術開発2019

    • Author(s)
      田中 保宣,清水 奎吾,小野田 忍,武山 昭憲,牧野 高紘,大島 武, 目黒 達也,黒木 伸一郎
    • Organizer
      応用物理学会 先進パワー半導体分科会 第6回講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 量産SiC-MOSFETにおける超高エネルギーイオン誘起破壊耐性の評価2019

    • Author(s)
      牧野 高紘
    • Organizer
      先進パワー半導体分科会 第6回講演会
    • Data Source
      KAKENHI-PROJECT-17K05111
  • [Presentation] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2018

    • Author(s)
      T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Organizer
      12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Radiation Hardened Silicon Carbide Electronics2018

    • Author(s)
      K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, T. Makino, T. Ohshima, S.-I. Kuroki
    • Organizer
      Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Short-channel 4H-SiC trench MOSFETs for harsh environment electronics2018

    • Author(s)
      T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Organizer
      Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs2018

    • Author(s)
      Takahiro Makino, Shuhei Takano, Shinsuke Harada, Yasuto Hijikata, and Takeshi Ohshima
    • Organizer
      IEEE Nuclear and Space Radiation Effects Conference 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K05111
  • [Presentation] Effects of High Gamma-Ray Radiation on 3C-SiC nMOSFETs2018

    • Author(s)
      Shin-Ichiro Kuroki, Kohei Nagano, Tatsuya Meguro, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, and Yasunori Tanaka
    • Organizer
      12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2018

    • Author(s)
      Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
    • Organizer
      12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 4H-SiC Trench MOSFETs による短チャネル効果の抑制効果2018

    • Author(s)
      石井 友康、黒木 伸一郎、瀬崎 洋、石川 誠治、前田 智徳、牧野 高紘、大島 武、Mikael Ostling 、Carl-Mikael Zetterling
    • Organizer
      2018年第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2018

    • Author(s)
      J. Inoue, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T Ohshima, M. Ostling, and C-M. Zetterling
    • Organizer
      12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2017

    • Author(s)
      J. Kajihara, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 高周波CMOSインバータに向けた4H-SiCトレンチpMOSFETsの研究2017

    • Author(s)
      井上 純、黒木 伸一郎、石川 誠治、前田 知徳、瀬崎 洋、牧野 高紘、大島 武、Mikael Ostling、Carl-Mikael Zetterling
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Research on 400°C Thermal Stability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications2017

    • Author(s)
      Vuong Van Cuong, Milantha De Silva, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
    • Organizer
      応用物理学会 先進パワー半導体分科会 第4回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Ba導入nMOSFETsに対するBTS試験およびガンマ線照射2017

    • Author(s)
      村岡幸輔,瀬崎洋,石川誠治,前田知徳,牧野高紘,大島武,黒木伸一郎
    • Organizer
      応用物理学会 先進パワー半導体分科会 第4回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2017

    • Author(s)
      T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 極限環境エレクトロニクスのための4H-SiC nMOSFETs セルフアラインプロセス2017

    • Author(s)
      黒瀬 達也、黒木 伸一郎、石川 誠治、前田 知徳、瀬崎 洋、牧野 高紘、大島 武、Mikael Ostling、Carl-Mikael Zetterling
    • Organizer
      2017年第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] 4H-SiC pMOSFETsの高温特性及びガンマ線曝露効果2017

    • Author(s)
      梶原純, 黒木伸一郎, 瀬崎洋, 石川誠治,前田知徳, 牧野高紘, 大島武, Mikael Ostling, and Carl-Mikael Zetterling
    • Organizer
      応用物理学会 先進パワー半導体分科会 第4回講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] SiCパワーMOSFETにおける重イオン誘起電荷収集のデバイス構造依存性2017

    • Author(s)
      高野修平、牧野 高紘、原田 信介、児島 一聡、土方 泰斗、大島 武
    • Organizer
      第78回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K05111
  • [Presentation] NbNiシリサイドS/D 3C-SiC nMOSFETsと高ガンマ線照射特性2017

    • Author(s)
      永野 耕平、目黒 達也、武山 昭憲、牧野 高紘、大島 武、田中 保宣、黒木 伸一郎
    • Organizer
      2018年第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H03253
  • [Presentation] トレンチゲート型SiC-MOSFETにおける放射線誘起破壊現象の物理過程探索と耐性評価2017

    • Author(s)
      高野 修平, 牧野 高紘, 原田 信介, 土方 泰斗, 大島 武
    • Organizer
      先進パワー半導体分科会 第4回講演会
    • Data Source
      KAKENHI-PROJECT-17K05111
  • [Presentation] Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H‐SiC Schottky Barrier Diodes2015

    • Author(s)
      T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima
    • Organizer
      16th International Conference on Silicon Carbide and Related Materials (ICSCRM2015)
    • Place of Presentation
      Giardini Naxos, Italy
    • Year and Date
      2015-10-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25790076
  • [Presentation] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2010

    • Author(s)
      T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, H. Ikeda and K. Hirose
    • Organizer
      The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications(RASEDA)
    • Place of Presentation
      Takasaki
    • Data Source
      KAKENHI-PROJECT-22760055
  • [Presentation] Digital Single Event Transient Pulse-Widths estimation in Logic Cells from Heavy-Ion-Induced Transient Currents in a Single MOSFET2010

    • Author(s)
      T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, H. Ikeda, and K. Hirose
    • Organizer
      IEEE Nuclear and space radiation effects conference
    • Place of Presentation
      Denver
    • Data Source
      KAKENHI-PROJECT-22760055
  • [Presentation] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2010

    • Author(s)
      T.Makino, et al.
    • Organizer
      The 9th International Workshop on Radiation Effects on □Semiconductor Devices for Space Applications (RASEDA-9)
    • Place of Presentation
      高崎市 高崎シティギャラリー
    • Data Source
      KAKENHI-PROJECT-22760055
  • [Presentation] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

    • Author(s)
      Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima
    • Organizer
      European Conference on Silicon Carbide & Related Materials
    • Place of Presentation
      World Trade Center, Grenoble, France
    • Year and Date
      2014-09-21 – 2014-09-25
    • Data Source
      KAKENHI-PROJECT-25790076
  • 1.  OHSHIMA Takeshi (50354949)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 32 results
  • 2.  Kuroki Shin-Ichiro (70400281)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 32 results
  • 3.  Tanaka Manobu (00222117)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  KANEKO Junichi (90333624)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  SHIMAOKA Takehiro (80650241)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  MIUCHI Kentaro (80362440)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  田中 保宣 (20357453)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 8.  児島 一聡 (40371041)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  武山 昭憲 (50370424)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 10.  小林 大輔 (90415894)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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