Makino Takahiro 牧野高紘

… Alternative Names

MAKINO Takahiro 牧野高紘

MAKINO Takakahiro 牧野高紘

Less

Researcher Number	80549668
Affiliation (Current)	2025: 国立研究開発法人量子科学技術研究開発機構, 高崎量子技術基盤研究所量子機能創製研究センター, 主幹研究員
Affiliation (based on the past Project Information) *help	2024 – 2025: 国立研究開発法人量子科学技術研究開発機構, 高崎量子技術基盤研究所量子機能創製研究センター, 主幹研究員 2022 – 2023: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所量子機能創製研究センター, 主幹研究員 2021: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 主幹研究員 2017 – 2020: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 主任研究員(定常) 2015: 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 研究員 … More 2015: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究員 2013 – 2014: 独立行政法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 研究員 2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究職 2010 – 2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 博士研究員 Less
Review Section/Research Field	Principal Investigator General applied physics / Basic Section 29030:Applied condensed matter physics-related / Applied physics, general Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 14:Plasma science and related fields / Broad Section C / Basic Section 31010:Nuclear engineering-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / Electron device/Electronic equipment / Particle/Nuclear/Cosmic ray/Astro physics
Keywords	Principal Investigator シングルイベント / パワーデバイス / SiC / 耐放射線性 / MOSFET / Single Event Burnout / ショットキーバリアダイオード / 放射線 / 炭化ケイ素 / ソフトエラー … More / SOI / イオン照射 / 論理LSI / SETパルス … More Except Principal Investigator 耐放射線 / CMOS集積回路 / 量子ビーム産業応用 / 放射線 / 機器・人間の信頼性 / 品質管理 / 極限環境 / 電子デバイス・集積回路 / 電子デバイス / 極限環境エレクトロニクス / シリコンカーバイド半導体 / 半導体検出器 / 低酸素社会 / 疑似直接検出 / 窒化ガリウム / III族窒化物 / イメージセンサー / III族窒化物半導体 / BGaN / イメージングセンサー / 中性子検出 / ワイドバンドギャップ半導体 / 高温 / SiC / 金属酸化物 / 原子スイッチ / 極限半導体デバイス / リスク評価 / 低炭素社会 / 高温動作集積回路 / 耐放射線集積回路 / 耐放射線デバイス / 高温動作 / 電子デバイス・電子機器 / 廃炉技術 / 耐高温動作 / MOSFET / シリコンカーバイド / 低質量ダークマター / ダークマター / 低雑音集積回路 / ワイドギャップ半導体 / 軽い暗黒物質 / 暗黒物質 Less

放射線誘起電流によるSiC半導体の偶発破壊素過程の実験的解明Principal Investigator
- Principal Investigator
  
  牧野高紘
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29030:Applied condensed matter physics-related
- Research Institution
  National Institutes for Quantum Science and Technology
原子スイッチによる極限環境用デジタル回路の実現
- Principal Investigator
  
  武山昭憲
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 31010:Nuclear engineering-related
- Research Institution
  National Institutes for Quantum Science and Technology
Research on SiC Extreme-Envionment Electronics for Exploring Human's New Frontiers
- Principal Investigator
  
  黒木伸一郎
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Hiroshima University
Development of ultra-high resolution neutron imaging by quasi-direct detection using BGaN detector
- Principal Investigator
  
  中野貴之
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 14:Plasma science and related fields
- Research Institution
  Shizuoka University
放射線を当てずに放射線ソフトエラー信頼性を評価する技術
- Principal Investigator
  
  小林大輔
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Japan Aerospace EXploration Agency
Research on Silicon-Carbide IoT Platform for Harsh Environment Applications
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Hiroshima University
Soft-Error Screening for Low-Cost High-Reliability LSI Development
- Principal Investigator
  
  Kobayashi Daisuke
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Japan Aerospace EXploration Agency
Study of ion induced charge collection process in SiC MOSFETsPrincipal Investigator
- Principal Investigator
  
  MAKINO Takahiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  General applied physics
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
Research on Silicon Carbide Harsh Environment Electronics
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Single Event Burnout Mechanisms in SiC devicesPrincipal Investigator
- Principal Investigator
  
  Makino Takahiro
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  General applied physics
- Research Institution
  Japan Atomic Energy Agency
Development of wide gap semiconductor pixel detector for light dark matter search
- Principal Investigator
  
  Tanaka Manobu
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Particle/Nuclear/Cosmic ray/Astro physics
- Research Institution
  High Energy Accelerator Research Organization
Estimation of Single Event Transient Pulses in Logic Cells from a Single TransistorPrincipal Investigator
- Principal Investigator
  
  MAKINO Takahiro
- Project Period (FY)
  2010 – 2011
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied physics, general
- Research Institution
  Japan Atomic Energy Agency

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2013 2011 2010 Other

All Journal Article Presentation

[Journal Article] Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors2022
- Author(s)
  Akinori Takeyama, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki, and Takeshi Ohshima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 24 Pages: 244503-244503
- DOI
  10.1063/5.0095841
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] An SRAM SEU cross section curve physics model2022
- Author(s)
  D. Kobayashi, K. Hirose, K. Sakamoto, Y. Tsuchiya, S. Okamoto, S. Baba, H. Shindou, O. Kawasaki, T. Makino, and T. Ohshima
- Journal Title
  
  IEEE Transactions on Nuclear Science
  
  Volume: 69 Issue: 3 Pages: 232-240
- DOI
  10.1109/tns.2021.3129185
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02217
[Journal Article] Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer2019
- Author(s)
  Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Akinori Takeyama, Takeshi Ohshima and Shin-Ichiro Kuroki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 8 Pages: 081007-081007
- DOI
  10.7567/1347-4065/ab2dab
- NAID
  210000156569
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2019
- Author(s)
  Tomoyasu Ishii, Shin-Ichiro Kuroki, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 613-616
- DOI
  10.4028/www.scientific.net/msf.963.613
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2019
- Author(s)
  Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 726-729
- DOI
  10.4028/www.scientific.net/msf.963.726
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2019
- Author(s)
  Jun Inoue, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 837-840
- DOI
  10.4028/www.scientific.net/msf.963.837
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2018
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M.Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 971-974
- DOI
  10.4028/www.scientific.net/msf.924.971
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2018
- Author(s)
  J. Kajihara, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 423-427
- DOI
  10.4028/www.scientific.net/msf.924.423
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2017
- Author(s)
  S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 669-672
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H‐SiC Schottky Barrier Diodes2016
- Author(s)
  T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 印刷中
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790076
[Journal Article] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes2015
- Author(s)
  Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima
- Journal Title
  
  Material Science Forum
  
  Volume: 821-823 Pages: 575-578
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790076
[Journal Article] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes2015
- Author(s)
  T. Makino, M. Deki, S. Onoda, N. Hoshino, H. Tsuchida, and T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 821-823 Pages: 575-578
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25790076
[Journal Article] Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes2013
- Author(s)
  Takahiro Makino, Manato Deki, Naoya Iwamoto, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Toshio Hirao, and Takeshi Ohshima
- Journal Title
  
  IEEE TRANSACTIONS ON NUCLEAR SCIENCE
  
  Volume: 60 Pages: 2647-2650
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25790076
[Journal Article] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2011
- Author(s)
  T.Makino, et al.
- Journal Title
  
  Proceedings of The 9th International Workshop on Radiation Effects on □Semiconductor Devices for Space Applications
  
  Pages: 169-172
- Data Source
  KAKENHI-PROJECT-22760055
[Presentation] 耐環境性向上を目指した低 B 組成 BGaN 中性子検出器の作製と評価2024
- Author(s)
  工藤涼兵、櫻井辰大、小久保瑛斗、川崎晟也、都木克之、西澤潤一、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] 過酷環境下での動作を目指した BGaN ダイオードの作製と諸特性評価2023
- Author(s)
  工藤涼兵、櫻井辰大、川崎晟也、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] 高ドーズ中性子照射場における BGaN 検出器の放射線検出特性評価2023
- Author(s)
  櫻井辰大、工藤涼兵、川崎晟也、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] Development of BGaN diodes with high radiation tolerance for nuclear instrumentation system2023
- Author(s)
  Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] Fabrication and characterization of BGaN diodes for nuclear instrumentation system2023
- Author(s)
  Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  he 14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] SiC CMOS Integrated Circuits and Image Sensors for Extreme Environment Applications2023
- Author(s)
  Shin-Ichiro Kuroki, Toya Kai, Masayuki Tsutsumi, Tatsuya Meguro, Vuong Van Cuong, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima
- Organizer
  7th IEEE Electron Devices Technology and Manufacturing (IEEE EDTM2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Fabrication and characterization of BGaN diodes for nuclear instrumentation system2023
- Author(s)
  Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  Inter-Academia 2023 (iA2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] SiC半導体による極限環境エレクトロニクス構築2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  2022年電子情報通信学会総合大会シンポジウム「極限環境で動作する集積回路」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド極限環境用集積回路および画素デバイスの研究2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  電気学会電子デバイス研究会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用（第2期）」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 高線量ガンマ線照射した 4H-SiC JFET のしきい値電圧安定性2022
- Author(s)
  武山昭憲, 牧野高紘, 田中保宣, 黒木伸一郎, 大島武
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也, 西垣内健汰, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 19 回研究会　「ワイドバンドギャップ半導体を用いた極限環境エレクトロニクス」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] An SRAM SEU cross section curve physics model2021
- Author(s)
  D. Kobayashi, K. Hirose, K. Sakamoto, Y Tsuchiya, S. Okamoto, S. Baba, H. Shindou, O. Kawasaki, T. Makino, and T. Ohshima
- Organizer
  IEEE Nuclear and Space Radiation Effects Conference (NSREC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02217
[Presentation] 耐放射線性炭化ケイ素半導体デバイスの開発2021
- Author(s)
  大島武, 武山昭憲、牧野高紘、黒木伸一郎、田中保宣
- Organizer
  2021年第82回応用物理学会秋季学術講演会シンポジウム「福島第1原発廃炉と福島復興　－応用物理学会の会員として，私たちに何ができるか－」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也，西垣内健汰，武山昭憲，牧野高紘，大島武，田中保宣
- Organizer
  応用物理学会・先進パワー半導体分科会第19回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド（SiC）極限環境エレクトロニクスの研究開発：原子炉廃炉対応から医療応用まで2021
- Author(s)
  黒木伸一郎, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  文部科学省共同利用・共同研究拠点生体医歯工学共同研究拠点　令和2年度成果報告会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響2020
- Author(s)
  武山昭憲，清水奎吾, 牧野高紘, 山崎雄一, 大島武, 黒木伸一郎, 田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC 短チャネル n/p MOSFETs における閾値の評価2020
- Author(s)
  志摩拓真，前田智徳，石川誠治，瀬崎洋，牧野高紘, 大島武, 黒木伸一郎
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Radiation hardness of 4H-SiC JFETs in MGy dose ranges,” The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)2019
- Author(s)
  A. Takeyama, K. Shimizu, T. Makino, Y. Yamazaki, S. Kuroki, Y. Tanaka, T. Ohshima
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC-NMOSFETs におけるガンマ線誘起移動度増加現象とその増加機構2019
- Author(s)
  村岡幸輔，瀬崎洋，石川誠治，前田知徳，牧野高紘，大島武，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] ノーマリーオフ型 4H-SiC JFET のガンマ線耐性2019
- Author(s)
  武山昭憲，清水奎吾，牧野高紘，山﨑雄一，大島武，黒木伸一郎，田中保宣
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 短チャネル SiC nMOSFET の温度特性評価2019
- Author(s)
  石井友康，瀬崎洋，石川誠治，前田智徳，牧野高紘，大島武, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] ノーマリーオフ型4H-SiC JFETのガンマ線照射効果2019
- Author(s)
  武山昭憲、清水奎吾、牧野高紘、山﨑雄一、大島武、黒木伸一郎、田中保宣
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC による耐放射線エレクトロニクス技術開発2019
- Author(s)
  田中保宣，清水奎吾，小野田忍，武山昭憲，牧野高紘，大島武，目黒達也，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 量産SiC-MOSFETにおける超高エネルギーイオン誘起破壊耐性の評価2019
- Author(s)
  牧野　高紘
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17K05111
[Presentation] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2018
- Author(s)
  T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Radiation Hardened Silicon Carbide Electronics2018
- Author(s)
  K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, T. Makino, T. Ohshima, S.-I. Kuroki
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Short-channel 4H-SiC trench MOSFETs for harsh environment electronics2018
- Author(s)
  T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs2018
- Author(s)
  Takahiro Makino, Shuhei Takano, Shinsuke Harada, Yasuto Hijikata, and Takeshi Ohshima
- Organizer
  IEEE Nuclear and Space Radiation Effects Conference 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K05111
[Presentation] Effects of High Gamma-Ray Radiation on 3C-SiC nMOSFETs2018
- Author(s)
  Shin-Ichiro Kuroki, Kohei Nagano, Tatsuya Meguro, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, and Yasunori Tanaka
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2018
- Author(s)
  Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Trench MOSFETs による短チャネル効果の抑制効果2018
- Author(s)
  石井友康、黒木伸一郎、瀬崎洋、石川誠治、前田智徳、牧野高紘、大島武、Mikael Ostling 、Carl-Mikael Zetterling
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2018
- Author(s)
  J. Inoue, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T Ohshima, M. Ostling, and C-M. Zetterling
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2017
- Author(s)
  J. Kajihara, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 高周波CMOSインバータに向けた4H-SiCトレンチpMOSFETsの研究2017
- Author(s)
  井上純、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Research on 400°C Thermal Stability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications2017
- Author(s)
  Vuong Van Cuong, Milantha De Silva, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Ba導入nMOSFETsに対するBTS試験およびガンマ線照射2017
- Author(s)
  村岡幸輔，瀬崎洋，石川誠治，前田知徳，牧野高紘，大島武，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2017
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 極限環境エレクトロニクスのための4H-SiC nMOSFETs セルフアラインプロセス2017
- Author(s)
  黒瀬達也、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC pMOSFETsの高温特性及びガンマ線曝露効果2017
- Author(s)
  梶原純, 黒木伸一郎, 瀬崎洋, 石川誠治，前田知徳, 牧野高紘, 大島武, Mikael Ostling, and Carl-Mikael Zetterling
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiCパワーMOSFETにおける重イオン誘起電荷収集のデバイス構造依存性2017
- Author(s)
  高野修平、牧野高紘、原田信介、児島一聡、土方泰斗、大島武
- Organizer
  第78回　応用物理学会　秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K05111
[Presentation] NbNiシリサイドS/D 3C-SiC nMOSFETsと高ガンマ線照射特性2017
- Author(s)
  永野耕平、目黒達也、武山昭憲、牧野高紘、大島武、田中保宣、黒木伸一郎
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] トレンチゲート型SiC-MOSFETにおける放射線誘起破壊現象の物理過程探索と耐性評価2017
- Author(s)
  高野修平, 牧野高紘, 原田信介, 土方泰斗, 大島武
- Organizer
  先進パワー半導体分科会　第4回講演会
- Data Source
  KAKENHI-PROJECT-17K05111
[Presentation] Epitaxial layer thickness dependence on heavy ion induced charge collection in 4H‐SiC Schottky Barrier Diodes2015
- Author(s)
  T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, T. Ohshima
- Organizer
  16th International Conference on Silicon Carbide and Related Materials (ICSCRM2015)
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25790076
[Presentation] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2010
- Author(s)
  T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, H. Ikeda and K. Hirose
- Organizer
  The 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications(RASEDA)
- Place of Presentation
  Takasaki
- Data Source
  KAKENHI-PROJECT-22760055
[Presentation] Digital Single Event Transient Pulse-Widths estimation in Logic Cells from Heavy-Ion-Induced Transient Currents in a Single MOSFET2010
- Author(s)
  T. Makino, S. Onoda, T. Hirao, T. Ohshima, D. Kobayashi, H. Ikeda, and K. Hirose
- Organizer
  IEEE Nuclear and space radiation effects conference
- Place of Presentation
  Denver
- Data Source
  KAKENHI-PROJECT-22760055
[Presentation] Estimation of Digital Single Event Transient Pulse-Widths in Logic Cells from High-Energy Heavy-Ion-Induced Transient Current in a Single MOSFET2010
- Author(s)
  T.Makino, et al.
- Organizer
  The 9th International Workshop on Radiation Effects on □Semiconductor Devices for Space Applications (RASEDA-9)
- Place of Presentation
  高崎市高崎シティギャラリー
- Data Source
  KAKENHI-PROJECT-22760055
[Presentation] Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes
- Author(s)
  Takahiro Makino, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima
- Organizer
  European Conference on Silicon Carbide & Related Materials
- Place of Presentation
  World Trade Center, Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25790076

1. OHSHIMA Takeshi (50354949)

# of Collaborated Projects: 4 results

# of Collaborated Products: 39 results
2. Kuroki Shin-Ichiro (70400281)

# of Collaborated Projects: 3 results

# of Collaborated Products: 39 results
3. 武山昭憲 (50370424)

# of Collaborated Projects: 3 results

# of Collaborated Products: 10 results
4. Kobayashi Daisuke (90415894)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
5. 田中保宣 (20357453)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
6. 児島一聡 (40371041)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
7. Tanaka Manobu (00222117)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. KANEKO Junichi (90333624)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. SHIMAOKA Takehiro (80650241)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. MIUCHI Kentaro (80362440)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 竹内浩造 (00870255)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 坂本敬太 (60867985)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 坂口将尊 (70626796)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 中野貴之 (00435827)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
15. 青木徹 (10283350)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
16. 本田善央 (60362274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
17. 若林源一郎 (90311852)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Makino Takahiro 牧野 高紘

MAKINO Takahiro 牧野 高紘

MAKINO Takakahiro 牧野 高紘

Research Projects

Research Products

Co-Researchers

放射線誘起電流によるSiC半導体の偶発破壊素過程の実験的解明Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study of ion induced charge collection process in SiC MOSFETsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Single Event Burnout Mechanisms in SiC devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Estimation of Single Event Transient Pulses in Logic Cells from a Single TransistorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] An SRAM SEU cross section curve physics model2022

Author(s)

Journal Title

DOI

Data Source

Makino Takahiro 牧野高紘

MAKINO Takahiro 牧野高紘

MAKINO Takakahiro 牧野高紘