TANIKAWA TOMOYUKI 谷川智之

… Alternative Names

Tanikawa Tomoyuki 谷川智之

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Researcher Number	90633537
Other IDs	https://orcid.org/0000-0003-0148-9701
Affiliation (Current)	2025: 大阪大学, 大学院工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2022 – 2024: 大阪大学, 大学院工学研究科, 准教授 2019 – 2021: 大阪大学, 工学研究科, 准教授 2016 – 2018: 東北大学, 金属材料研究所, 講師 2014 – 2015: 東北大学, 金属材料研究所, 助教
Review Section/Research Field	Principal Investigator Science and Engineering / Basic Section 30010:Crystal engineering-related / Medium-sized Section 26:Materials engineering and related fields / Electronic materials/Electric materials Except Principal Investigator Crystal engineering / Basic Section 30020:Optical engineering and photon science-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / Medium-sized Section 30:Applied physics and engineering and related fields / Applied physics and engineering and related fields
Keywords	Principal Investigator シリコンカーバイド / 窒化ガリウム / GaN / 転位 / 多光子顕微鏡 / 窒化物半導体 / 多光子励起フォトルミネッセンス / 三次元イメージング / 分極 / InGaN … More / 有機金属気相成長 / 分極電界 / 変調分光 / 積層欠陥 / 次世代半導体 / Ga2O3 / ダイヤモンド / 酸化ガリウム / 結晶欠陥 / ワイドギャップ半導体 / 欠陥 / 特異構造 / フォトルミネッセンス / 半導体 / ハイパーラマン散乱 / ラマン散乱 / X線逆格子マッピング / N極性 / トランジスタ / 有機金属気相成長法 / 高電子移動度トランジスタ / 発光ダイオード / 極性・分極 … More Except Principal Investigator 窒化物半導体 / GaN / 第二高調波発生 / 非線形光学 / 光量子コンピュータ / 光子対発生 / 単一モードレーザ / モノリシック光集積デバイス / ナノ領域電荷ダイナミクス / FT-IR分光 / 2光子励起と深さ方向分析 / 半導体工程検査技術 / テラヘルツ放射顕微鏡 / テラヘルツ放射分光 / 貫通転位 / 点欠陥 / 多光子顕微鏡 / 全方位フォトルミネセンス / 窒化ガリウム / モノリシック共振器 / モノリシック集積 / モノリシック微小共振器 / 量子光学 / ワイドギャップ半導体 / 微小共振器 / モノリシック / 波長変換素子 / ヘテロ構造 / N極性 / 有機金属気相成長法 / 高電子移動度トランジスタ / HEMT / 分極効果 / 有機金属気相成長 / 極性 / パルスレーザー堆積 / 光導波路 / 反応性スパッタリング / パルスレーザ堆積 / 酸化ジルコニウム / 窒化アルミニウム Less

Photon terahertz wave conversion modeling in local fields and its application to semiconductor analysis
- Principal Investigator
  
  斗内政吉
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
光量子コンピューティング用窒化物半導体モノリシック光集積デバイスに関する研究
- Principal Investigator
  
  上向井正裕
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30020:Optical engineering and photon science-related
- Research Institution
  Osaka University
Nondestructive measurement of crystal defects using multiphoton excitation photoluminescencePrincipal Investigator
- Principal Investigator
  
  Tomoyuki Tanikawa
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Osaka University
Imaging of threading dislocations by hyper-Raman scatteringPrincipal Investigator
- Principal Investigator
  
  Tanikawa Tomoyuki
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 26:Materials engineering and related fields
- Research Institution
  Osaka University
Nondestructive measurement of crystal defects using multiphoton excitation photoluminescencePrincipal Investigator
- Principal Investigator
  
  谷川智之
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Osaka University
Realization of a method to visualize the distribution of threading dislocations and point defects in semiconductor crystals
- Principal Investigator
  
  Kojima Kazunobu
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Tohoku University
Control of transport properties in nitride semiconductors by introducing polarization effectsPrincipal Investigator
- Principal Investigator
  
  谷川智之
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Development of monolithic cavity wavelength converter made of widegap semiconductors
- Principal Investigator
  
  Katayama Ryuji
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Research Field
  
  Applied physics and engineering and related fields
- Research Institution
  Osaka University
Crystal Growth of N-polar Nitride Semiconductor Heterostructures with Two-Dimensional Electron Gas
- Principal Investigator
  
  Matsuoka Takashi
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tohoku University
Control of Polarization-Induced Electric Field in Nitride-Semiconductor-Based DevicesPrincipal Investigator
- Principal Investigator
  
  Tanikawa Tomoyuki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light Sources
- Principal Investigator
  
  Katayama Ryuji
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Osaka University
  Tohoku University

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 Other

All Journal Article Presentation Patent

[Journal Article] Demonstration of violet-DFB laser with fairly small temperature dependence in current-light characteristics2024
- Author(s)
  Fukamachi Toshihiko、Nishinaka Junichi、Naniwae Koichi、Usuda Shuichi、Fukai Haruki、Sugitani Akihiko、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 5 Pages: 052004-052004
- DOI
  10.35848/1882-0786/ad40fb
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K26572
[Journal Article] Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal-Organic Vapor Phase Epitaxy2023
- Author(s)
  Murata Tomotaka、Ikeda Kazuhisa、Yamasaki Jun、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji
- Journal Title
  
  physica status solidi (b)
  
  Volume: 260 Issue: 8 Pages: 2200583-2200583
- DOI
  10.1002/pssb.202200583
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02631, KAKENHI-PROJECT-20H02640
[Journal Article] Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks2023
- Author(s)
  Nishikawa Tomoka、Goto Ken、Murakami Hisashi、Kumagai Yoshinao、Uemukai Masahiro、Tanikawa Tomoyuki、Katayama Ryuji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SF Pages: SF1015-SF1015
- DOI
  10.35848/1347-4065/acc18e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02640, KAKENHI-PROJECT-23K17743
[Journal Article] Identification of Burgers vectors of threading dislocations in freestanding GaN substrates via multiphoton-excitation photoluminescence mapping2021
- Author(s)
  Tsukakoshi Mayuko、Tanikawa Tomoyuki、Yamada Takumi、Imanishi Masayuki、Mori Yusuke、Uemukai Masahiro、Katayama Ryuji
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 5 Pages: 055504-055504
- DOI
  10.35848/1882-0786/abf31b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PUBLICLY-19H04532, KAKENHI-PROJECT-19K22043, KAKENHI-PROJECT-20H02640
[Journal Article] Nondestructive characterization of threading dislocations in graded buffer layers of inverted metamorphic solar cells by two-photon excitation spectroscopy2021
- Author(s)
  Ogura Akio、Tanikawa Tomoyuki、Takamoto Tatsuya、Oshima Ryuji、Sugaya Takeyoshi、Imaizumi Mitsuru
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 11 Pages: 111002-111002
- DOI
  10.35848/1882-0786/ac2d10
- Data Source
  KAKENHI-PROJECT-20H02640
[Journal Article] Emission color modulation of InGaN/GaN multiple quantum wells by selective area metalorganic vapor phase epitaxy on hexagonal windows2021
- Author(s)
  Shin Yoshida,Kanako Shojiki,Hideto Miyake,Masahiro Uemukai,Tomoyuki Tanikawa,Ryuji Katayama
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 3 Pages: 030904-030904
- DOI
  10.35848/1347-4065/ac55e5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K15025, KAKENHI-PROJECT-20H02640, KAKENHI-PROJECT-22K14612
[Journal Article] Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping2021
- Author(s)
  Tanikawa Tomoyuki、Tsukakoshi Mayuko、Uemukai Masahiro、Katayama Ryuji
- Journal Title
  
  Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI
  
  Volume: 116861Z Pages: 58-58
- DOI
  10.1117/12.2584794
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Journal Article] Multiphoton Microscopy2020
- Author(s)
  Tanikawa Tomoyuki
- Journal Title
  
  Characterization of Defects and Deep Levels for GaN Power Devices
  
  Volume: - Pages: 1-22
- DOI
  10.1063/9780735422698_007
- ISBN
  9780735422704, 9780735422698, 9780735422728, 9780735422711
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-19H04532, KAKENHI-PROJECT-20H02640, KAKENHI-PROJECT-19K22043
[Journal Article] Observation of Dislocations in Graded Buffer Layers of IMM Single Junction InGaAs Solar Cells by Two-Photon Excitation Photoluminescence2019
- Author(s)
  Ogura Akio, Tanikawa Tomoyuki, Takamoto Tatsuya, Oshima Ryuji, Suzuki Hidetoshi, Imaizumi Mitsuru, Sugaya Takeyoshi
- Journal Title
  
  2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
  
  Volume: - Pages: 0273-0276
- DOI
  10.1109/pvsc40753.2019.8981390
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-19H04532, KAKENHI-PROJECT-20H02640
[Journal Article] Growth of GaN and improvement of lattice curvature using symmetric hexagonal SiO2 patterns in HVPE growth2019
- Author(s)
  Fujimoto Satoru、Itakura Hideyuki、Tanikawa Tomoyuki、Okada Narihito、Tadatomo Kazuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SC1049-SC1049
- DOI
  10.7567/1347-4065/ab1125
- NAID
  210000156181
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K22043, KAKENHI-PUBLICLY-19H04532
[Journal Article] Multiphoton-Excitation Photoluminescence as a Tool for Defect Characterization of GaN Crystal2019
- Author(s)
  Tanikawa Tomoyuki
- Journal Title
  
  Materia Japan
  
  Volume: 58 Issue: 3 Pages: 144-149
- DOI
  10.2320/materia.58.144
- NAID
  130007606778
- ISSN
  1340-2625, 1884-5843
- Year and Date
  2019-03-01
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-16K18074
[Journal Article] Crystal Growth Technology of N-polar Nitride Semiconductors by Metalorganic Vapor Phase Epitaxy2018
- Author(s)
  谷川智之、プラスラットスックキャッティウット、木村健司、窪谷茂幸、松岡隆志
- Journal Title
  
  Journal of the Japanese Association for Crystal Growth
  
  Volume: 45 Issue: 1 Pages: n/a
- DOI
  10.19009/jjacg.3-45-1-01
- NAID
  130006727544
- ISSN
  0385-6275, 2187-8366
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-16K18074
[Journal Article] N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching2018
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 015503-015503
- DOI
  10.7567/apex.11.015503
- NAID
  210000136090
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074, KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-16H03857, KAKENHI-PROJECT-16H04341
[Journal Article] Observation of Threading Dislocation in Thick GaN Crystal Using Inelastically Scattered Electron2018
- Author(s)
  Kiguchi Takanori、Shiraishi Takahisa、Konno Toyohiko J.、Tanikawa Tomoyuki
- Journal Title
  
  Materia Japan
  
  Volume: 57 Issue: 12 Pages: 615-615
- DOI
  10.2320/materia.57.615
- NAID
  130007538920
- ISSN
  1340-2625, 1884-5843
- Year and Date
  2018-12-01
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-17H05325, KAKENHI-PUBLICLY-17H05327, KAKENHI-PROJECT-16K18074
[Journal Article] Three-dimensional imaging of threading dislocations in GaN crystals using two-photon-excitation photoluminescence2018
- Author(s)
  T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, T. Matsuoka
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 3 Pages: 031004-031004
- DOI
  10.7567/apex.11.031004
- NAID
  210000136118
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K18074, KAKENHI-PUBLICLY-17H05325
[Journal Article] Control of impurity concentration in N-polar (000-1) GaN grown by metalorganic vapor phase epitaxy2017
- Author(s)
  Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Matsuoka
- Journal Title
  
  Physics Status Solidi B
  
  Volume: 254 Issue: 8
- DOI
  10.1002/pssb.201600751
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-16H03857
[Journal Article] Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations2017
- Author(s)
  Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 8 Pages: 082101-082101
- DOI
  10.7567/apex.10.082101
- NAID
  210000135940
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-17K19078, KAKENHI-PUBLICLY-17H05335
[Journal Article] Absolute Technique for Measuring Internal Electric Fields in InGaN/GaN Light-Emitting Diodes by Electroreflectance Applicable to All Crystal Orientations2017
- Author(s)
  T. Tanikawa, K. Shojiki, R. Katayama, S. Kuboya, T. Matsuoka, Y.
- Journal Title
  
  Applied Physics Express
  
  Volume: 10
- NAID
  210000135940
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18074
[Journal Article] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar p-type GaN grown by metalorganic vapor phase epitaxy2016
- Author(s)
  R. Nonoda, K. Shojiki, T. Tanikawa, S. Kuboya, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FE01-05FE01
- DOI
  10.7567/jjap.55.05fe01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Nanometer scale fabrication and optical response of InGaN/GaN quantum disks2016
- Author(s)
  Yi-Chun Lai, Akio Higo, Takayuki Kiba, Cedric Thomas, Shula Chen, Chang Yong Lee, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Kanako Shojiki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Gou-Chung Chi, Peichen Yu, Seiji Samukawa
- Journal Title
  
  Nanotechnology
  
  Volume: 27 Issue: 42 Pages: 425401-425401
- DOI
  10.1088/0957-4484/27/42/425401
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06359, KAKENHI-PROJECT-26600082
[Journal Article] Large Stokes-like shift in N-polar (000-1) InGaN/GaN multiple-quantum-well light-emitting diodes2016
- Author(s)
  T. Tanikawa, K. Shojiki, S .Kuboya, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FJ03-05FJ03
- DOI
  10.7567/jjap.55.05fj03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-16K18074
[Journal Article] Homogeneity improvement of N-polar InGaN/GaN multiple quantum wells by using c-plane sapphire substrate with off-cut-angle toward a-sapphire plane2016
- Author(s)
  Kanako Shojiki, Takashi Hanada, Tomoyuki Tanikawa, Yasuhiko Imai, Shigeru Kimura, Ryohei Nonoda, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 (5S) Issue: 5S Pages: 05FA09-05FA09
- DOI
  10.7567/jjap.55.05fa09
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces2016
- Author(s)
  Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda, Takashi Matsuoka
- Journal Title
  
  physica status solidi (a)
  
  Volume: － Issue: 9 Pages: 1600754-1600754
- DOI
  10.1002/pssa.201600754
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN templates by metalorganic vapor phase epitaxy2016
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FA04-05FA04
- DOI
  10.7567/jjap.55.05fa04
- NAID
  210000146483
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] MOVPE growth of N-polar GaN/AlGaN/GaN heterostructure on small off-cut substrate for flat interface2016
- Author(s)
  K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, T. Matsuoka
- Journal Title
  
  2016 Compound Semiconductor Week, CSW 2016
  
  Volume: - Pages: 1-2
- DOI
  10.1109/iciprm.2016.7528837
- Data Source
  KAKENHI-PROJECT-16H03857
[Journal Article] Suppression of metastable-phase inclusion in N-polar (000-1) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy2015
- Author(s)
  K. Shojiki, J.H.Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 (22) Issue: 22
- DOI
  10.1063/1.4922131
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
[Journal Article] Red to blue wavelength emission of N-polar (000-1) InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy2015
- Author(s)
  K. Shojiki, T. Tanikawa, J.H.Choi, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 8 (6) Issue: 6 Pages: 061005-061005
- DOI
  10.7567/apex.8.061005
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
[Patent] 半導体レーザ素子および発光装置2024
- Inventor(s)
  西中淳一、深町俊彦、上向井正裕、片山竜二、谷川智之
- Industrial Property Rights Holder
  ウシオ電機株式会社、国立大学法人大阪大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2024-044657
- Filing Date
  2024
- Data Source
  KAKENHI-PROJECT-23K26572
[Patent] 半導体レーザ素子およびその製造方法、発光装置2024
- Inventor(s)
  西中淳一、深町俊彦、上向井正裕、片山竜二、谷川智之
- Industrial Property Rights Holder
  ウシオ電機株式会社、国立大学法人大阪大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2024-017482
- Filing Date
  2024
- Data Source
  KAKENHI-PROJECT-23K26572
[Patent] 半導体レーザ素子および発光装置2024
- Inventor(s)
  西中淳一、深町俊彦、上向井正裕、片山竜二、谷川智之
- Industrial Property Rights Holder
  ウシオ電機株式会社、国立大学法人大阪大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2024-041407
- Filing Date
  2024
- Data Source
  KAKENHI-PROJECT-23K26572
[Patent] 窒化物半導体レーザ素子およびその製造方法、発光装置2023
- Inventor(s)
  深町俊彦、上向井正裕、片山竜二、谷川智之
- Industrial Property Rights Holder
  ウシオ電機株式会社、国立大学法人大阪大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2023-119337
- Filing Date
  2023
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] InGaN周期スロットレーザーのCW波長可変単一モード動作実証2024
- Author(s)
  楠井大晴，和田拓巳，上向井正裕，谷川智之，片山竜二
- Organizer
  レーザー学会学術講演会第44回年次大会
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] AlN/SiNx水平積層横型擬似位相整合導波路の設計と作製2024
- Author(s)
  本田啓人，上向井正裕，谷川智之，片山竜二
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] 横型擬似位相整合4層極性反転AlN導波路による第二高調波発生の実証2024
- Author(s)
  佐藤栄希，本田啓人，百崎怜，玉野智大，正直花奈子，三宅秀人，上向井正裕，谷川智之，片山竜二
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] 多光子励起過程を利用したβ-Ga2O3の時間分解フォトルミネッセンス分光2023
- Author(s)
  西河巴賀，谷川智之，本田啓人，後藤健，村上尚，熊谷義直，田中敦之，本田善央，天野浩，上向井正裕，片山竜二
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Fabrication of Transverse Quasi-Phase-Matched Channel Waveguide using 4-Layer Polarity Inverted AlN Structure for Second Harmonic Generation2023
- Author(s)
  Eiki Sato, Hiroto Honda, Ryo Momosaki, Tomohiro Tamano, Kanako Shojiki, Hideto Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] Fabrication of InGaN Tunable Single-Mode Laser Using Periodically Slotted Structure2023
- Author(s)
  Taisei Kusui, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
- Organizer
  第42回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] 光ニードル顕微鏡法を用いたGaN結晶内転位の3次元可視化における球面収差補正と空間分解能の評価2023
- Author(s)
  三浦祐樹，小澤祐市，谷川智之，上杉祐貴，佐藤俊一
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Horizontally Stacked Transverse QPM Channel Waveguide for Squeezed Light Generation2023
- Author(s)
  Hiroto Honda, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
- Organizer
  第42回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] DCパルススパッタリング法によるGaNの選択成長2023
- Author(s)
  長谷川大輔，本田達也，上山智，高橋伸明，三浦仁嗣，上向井正裕，谷川智之，片山竜二
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] GaN横型擬似位相整合光子対発生デバイスに向けた高次導波モード励起グレーティング結合器2023
- Author(s)
  古川裕也，本田啓人, 池田和久, 上向井正裕, 谷川智之, 片山竜二
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] High-Order Guided Mode Excitation Grating Coupler for GaN Transverse Quasi-Phase-Matched Photon Pair Generation Device2023
- Author(s)
  Yuya Furukawa, Hiroto Honda, Kazuhisa Ikeda, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
- Organizer
  第42回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] Fabrication of Transverse Quasi-Phase-Matched Channel Waveguide using 4-Layer Polarity Inverted AlN Structure for Second Harmonic Generation2023
- Author(s)
  Eiki Sato, Hiroto Honda, Ryo Momosaki, Tomohiro Tamano, Kanako Shojiki, Hideto Miyake, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
- Organizer
  第42回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] Design of AlN/Ta2O5 Horizontally Stacked Transverse-QPM Channel Waveguide for Squeezed Light Generation2023
- Author(s)
  Hiroto Honda, Masahiro Uemukai, Tomoyuki Tanikawa, and Ryuji Katayama
- Organizer
  14th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26572
[Presentation] Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks2022
- Author(s)
  T. Nishikawa, M. Tsukakoshi, K. Goto, H. Murakami, Y. Kumagai, M. Uemukai, T. Tanikawa, and R. Katayama
- Organizer
  The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Three-dimensional characterization of threading dislocations in heteroepitaxial diamond substrate using multiphoton-excitation photoluminescence2022
- Author(s)
  T. Tanikawa, R. Katayama, S. Ohmagari
- Organizer
  32nd International Conference on Diamond and Carbon Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] EFG成長 (010)β-Ga2O3結晶中のナノパイプの三次元形状2022
- Author(s)
  西河巴賀、塚越真悠子、後藤健、村上尚、熊谷義直、上向井正裕、谷川智之、片山竜二
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 3D Imaging of β-Ga2O3 Crystal Using Multiphoton-Excitation Photoluminescence2022
- Author(s)
  T. Nishikawa, M. Tsukakoshi, K. Goto, H. Murakami, Y. Kumagai, M. Uemukai, T. Tanikawa, and R. Katayama
- Organizer
  2022 MRS Spring Meeting & Exhibit
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] GaN縦型pnダイオード中の特異なフォトルミネッセンス発光2022
- Author(s)
  谷川智之、塚越真悠子、宇佐美茂佳、今西正幸、森勇介、川崎晟也、田中敦之、本田善央、天野浩、上向井正裕、片山竜二
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Identification of Burgers vectors of threading dislocations in HVPE-Grown GaN using Multiphoton-Excitation Photoluminescence2022
- Author(s)
  T. Tanikawa, Y. Ishii, M. Tsukakoshi, R. Terada, M. Adachi, M. Uemukai, R. Katayama
- Organizer
  International Workshop on Nitride Semiconductors (IWN2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] a面GaN/c面GaNの表面活性化接合に向けた表面平坦化プロセス2022
- Author(s)
  安田悠馬、上向井正裕、谷川智之、片山竜二
- Organizer
  第14回ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Fabrication of GaN transverse quasi phase matching photon pair generation device using MOVPE-based epitaxial polarity inversion technology2022
- Author(s)
  K. Ikeda, T. Murata, S. Ichikawa, Y. Fujiwara, T. Tanikawa, M. Uemukai, and R. Katayama
- Organizer
  第41回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] MOVPEエピタキシャル極性反転技術を用いたGaN横型擬似位相整合光子対発生デバイスの作製2022
- Author(s)
  池田和久、村田知駿、市川修平、藤原康文、上向井正裕、谷川智之、片山竜二
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] "Polarity inversion of GaN via AlN oxidation interlayer using metalorganic vapor phase epitaxy"2022
- Author(s)
  T. Murata, K. Ikeda, J. Yamasaki, T. Tanikawa, M. Uemukai, and R. Katayama
- Organizer
  International Workshop on Nitride Semiconductors (IWN2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Polarity inversion of GaN films by metalorganic vapor epitaxy using an AlN interlayer2022
- Author(s)
  Tomoyuki Tanikawa
- Organizer
  The 3rd International Workshop on Materials Science and Advanced Electronics Created by Singularity/ The 2nd International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] ヘテロエピタキシャル成長ダイヤモンド基板中の貫通転位の伝搬挙動2022
- Author(s)
  谷川智之、大曲新矢、上向井正裕、片山竜二
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Correlation Between MPPL and Raman Mapping Images of GaN for Nondestructive Identification of Threading Dislocations2021
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai and R. Katayama
- Organizer
  第40回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Core structure of threading dislocations in GaN2021
- Author(s)
  T. Kiguchi , Y. Kodama, Y. Hayasaka, T. Tanikawa, and T. J. Konno
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Invited
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 多光子励起フォトルミネッセンスによる結晶欠陥の非侵襲観察2021
- Author(s)
  谷川智之
- Organizer
  2021年2月24日新学術領域研究特異構造の結晶科学オンライン成果報告・連絡会（Zoom）
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 多光子励起フォトルミネッセンス法によるβ-Ga2O3結晶のナノパイプ観察2021
- Author(s)
  西河巴賀、塚越真悠子、後藤健、村上尚、熊谷義直、上向井正裕、谷川智之、片山竜二
- Organizer
  第13回ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping2021
- Author(s)
  T. Tanikawa, M. Tsukakoshi, M. Uemukai, R. Katayama
- Organizer
  SPIE Photonics West: Conference 11686 -Gallium Nitride Materials and Devices XVI-
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] Classification of threading dislocations in HVPE-grown n-type GaN substrates by multiphoton-excitation photoluminescence imaging2021
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Invited
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] サファイア基板上N極性GaN薄膜の有機金属気相成長法における平坦化条件の探索2021
- Author(s)
  池田和久，村田知駿，上向井正裕，谷川智之，片山竜二
- Organizer
  第50回結晶成長国内会議（JCCG-50）
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 多光子励起フォトルミネッセンス法によるβ-Ga2O3結晶の三次元イメージング2021
- Author(s)
  西河巴賀、塚越真悠子、後藤健、村上尚、熊谷義直、谷川智之、上向井正裕、片山竜二
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 多光子励起過程を利用した次世代半導体材料の欠陥評価技術2021
- Author(s)
  谷川智之
- Organizer
  日本学術振興会第R032委員会第2回研究会「R032委員会キックオフ研究会：結晶作製Ⅱ」
- Invited
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 多光子励起フォトルミネッセンスによる結晶欠陥の非侵襲観察2021
- Author(s)
  谷川智之
- Organizer
  2021年2月24日新学術領域研究特異構造の結晶科学オンライン成果報告・連絡会（Zoom）
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] Correlation between etch pit size and threading dislocation propagation habit in GaN substrate observed by multiphoton-excitation photoluminescence2021
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] 有機金属気相成長法を用いたGaNエピタキシャル極性反転技術の開発2021
- Author(s)
  村田知駿、谷川智之、上向井正裕、片山竜二
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping2021
- Author(s)
  T. Tanikawa, M. Tsukakoshi, M. Uemukai, R. Katayama
- Organizer
  SPIE Photonics West: Conference 11686 -Gallium Nitride Materials and Devices XVI-
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] フルカラーInGaN多重量子井戸の作製に向けた接合可能な非極性GaN平坦膜の成長2021
- Author(s)
  安田悠馬、谷川智之、上向井正裕、片山竜二
- Organizer
  第13回ナノ構造エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Nondestructive Characterization of Dislocations Using Multiphoton-Excitation Photoluminescence2021
- Author(s)
  T. Tanikawa, A. Ogura, M. Uemukai, and R. Katayama
- Organizer
  SemiconNano2021
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 多光子顕微鏡による化合物半導体の欠陥解析2021
- Author(s)
  谷川智之
- Organizer
  日本学術振興会第R026委員会第7回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] GaN結晶中の貫通転位の非破壊分類に向けた多光子励起PLマッピング像とラマンマッピング像の相関解析2021
- Author(s)
  谷川智之、足立真理子、寺田陸斗、塚越真悠子、上向井正裕、片山竜二
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 窒化物半導体の波長変換デバイス応用2021
- Author(s)
  谷川智之
- Organizer
  応用物理学会中国四国支部・若手半導体研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] GaN結晶中の貫通転位の非破壊分類に向けた多光子励起PLマッピング像とラマンマッピング像の相関解析2021
- Author(s)
  谷川智之、足立真理子、寺田陸斗、塚越真悠子、上向井正裕、片山竜二
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] 気相拡散効果を利用したマルチカラーInGaN多重量子井戸の有機金属気相選択成長2021
- Author(s)
  吉田新，正直花奈子，三宅秀人，谷川智之，上向井正裕，片山竜二
- Organizer
  第50回結晶成長国内会議（JCCG-50）
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Core structure of threading dislocations in GaN2021
- Author(s)
  T. Kiguchi , Y. Kodama, Y. Hayasaka, T. Tanikawa, and T. J. Konno
- Organizer
  "The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)"
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] Nondestructive characterization of GaN by multiphoton-excitation photoluminescence mapping2021
- Author(s)
  T. Tanikawa, M. Tsukakoshi, M. Uemukai, R. Katayama
- Organizer
  SPIE Photonics West: Conference 11686 -Gallium Nitride Materials and Devices XVI-
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] GaN結晶中の貫通転位の非破壊分類に向けた多光子励起PLマッピング像とラマンマッピング像の相関解析2021
- Author(s)
  谷川智之、足立真理子、寺田陸斗、塚越真悠子、上向井正裕、片山竜二
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] "Classification of threading dislocations in HVPE-grown n-type GaN substrates by multiphoton-excitation photoluminescence imaging"2021
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] Fabrication of GaN Polarity Inverted Structure via Ultrathin AlN Oxidation Interlayer using Metalorganic Vapor Phase Epitaxy2021
- Author(s)
  T. Murata, T. Tanikawa, M. Uemukai and R. Katayama
- Organizer
  第40回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Core structure of threading dislocations in GaN2021
- Author(s)
  T. Kiguchi , Y. Kodama, Y. Hayasaka, T. Tanikawa, and T. J. Konno
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] 多光子励起フォトルミネッセンスによる結晶欠陥の非侵襲観察2021
- Author(s)
  谷川智之
- Organizer
  2021年2月24日新学術領域研究特異構造の結晶科学オンライン成果報告・連絡会（Zoom）
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] Comparative study of dislocation classification in HVPE-grown GaN by etch pit method and multiphoton-excitation photoluminescence imaging2020
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  第39回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Correlation between etch pit size and threading dislocation propagation habit in GaN substrate observed by multiphoton-excitation photoluminescence2020
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020)
- Invited
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶中貫通転位の観察と分類2020
- Author(s)
  塚越真悠子、谷川智之、上向井正裕、片山竜二
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] GaN縦型p-nダイオードにおける2光子吸収光電流の測定2020
- Author(s)
  川崎晟也、安藤悠人、田中敦之、塚越真悠子、谷川智之、出来真斗、久志本真希、新田州吾、本田善央、天野浩
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] Correlation between etch pit size and threading dislocation propagation habit in GaN substrate observed by multiphoton-excitation photoluminescence2020
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] "多光子励起フォトルミネッセンス測定における集光スポットサイズを考慮した GaN結晶中の貫通転位の判別"2020
- Author(s)
  塚越真悠子、谷川智之、上向井正裕、片山竜二
- Organizer
  日本結晶成長学会ナノエピ分科会「第12回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶の貫通転位の観察と分類 (2)2020
- Author(s)
  塚越真悠子、谷川智之、上向井正裕、片山竜二
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] Comparative study of dislocation classification in HVPE-grown GaN by etch pit method and multiphoton-excitation photoluminescence imaging2020
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, and R. Katayama
- Organizer
  第39回電子材料シンポジウム
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] 多光子励起PL三次元測定によるGaN基板中の転位の判別2020
- Author(s)
  谷川智之、塚越真悠子、上向井正裕、片山竜二
- Organizer
  ワイドギャップ半導体光・電子デバイス第162委員会第118回研究会「最先端評価技術を用いたワイドギャップ半導体結晶中の転位評価」
- Invited
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶の貫通転位の観察と分類 (2)2020
- Author(s)
  塚越真悠子、谷川智之、上向井正裕、片山竜二
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Comparative study of dislocation classification in HVPE-grown GaN by etch pit method and multiphoton-excitation photoluminescence imaging2020
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, and R. Katayama
- Organizer
  第39回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶の貫通転位の観察と分類 (2)2020
- Author(s)
  塚越真悠子、谷川智之、上向井正裕、片山竜二
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶中貫通転位の観察と分類2020
- Author(s)
  塚越真悠子、谷川智之、上向井正裕、片山竜二
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] 多光子励起フォトルミネッセンス法によるHVPE-GaN結晶中貫通転位の観察と分類2020
- Author(s)
  塚越真悠子、谷川智之、上向井正裕、片山竜二
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] Correlation between etch pit size and threading dislocation propagation habit in GaN substrate observed by multiphoton-excitation photoluminescence2020
- Author(s)
  M. Tsukakoshi, T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  8th International Conference on Light-Emitting Devices and Their Industrial Application (LEDIA2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] 多光子励起フォトルミネッセンス測定における集光スポットサイズを考慮した GaN結晶中の貫通転位の判別2020
- Author(s)
  塚越真悠子、谷川智之、上向井正裕、片山竜二
- Organizer
  日本結晶成長学会ナノエピ分科会「第12回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PROJECT-20H02640
[Presentation] Nondestructive defect characterization of widegap semiconductors using multiphotonexcitation photoluminescence2019
- Author(s)
  T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] Multiphoton-Excitation Photoluminescence: Novel Nondestructive Deffect Characterization Technology2019
- Author(s)
  T. Tanikawa, T. Matsuoka
- Organizer
  19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] 多光子励起による窒化ガリウム結晶の時間分解フォトルミネセンス分光(2)2019
- Author(s)
  小島一信，谷川智之，粕谷拓生，秩父重英，田中敦之，本田善央，天野浩，上向井正裕，片山竜二
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] 多光子顕微鏡によるGaN結晶中の転位伝搬評価2019
- Author(s)
  谷川智之, 松岡隆志
- Organizer
  第145委員会，第161委員会　合同研究会「窒化物半導体における欠陥低減技術の進展と評価技術の最前線」
- Invited
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] Observation of Dislocations in Graded Buffer Layers of IMM Single Junction InGaAs Solar Cells by Two-Photon Excitation Photoluminescence2019
- Author(s)
  A. Ogura, T. Tanikawa, T. Takamoto, R. Oshima, H. Suzuki, M. Imaizumi, T. Sugaya
- Organizer
  46th IEEE Photovoltaic Specialists Conference (PVSC 46)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] 多光子励起による窒化ガリウム結晶の時間分解フォトルミネセンス分光（２）2019
- Author(s)
  小島一信，谷川智之，粕谷拓生，上向井正裕，片山竜二，田中敦之，本田善央，天野浩，秩父重英
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19028
[Presentation] Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence2019
- Author(s)
  谷川智之、大西一生、加納聖也、向井孝志、松岡隆志
- Organizer
  第80回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence2019
- Author(s)
  谷川智之、大西一生、加納聖也、向井孝志、松岡隆志
- Organizer
  第80回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] Multiphoton-Excitation Photoluminescence: Novel Nondestructive Deffect Characterization Technology2019
- Author(s)
  T. Tanikawa, T. Matsuoka
- Organizer
  19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] 多光子顕微鏡によるGaN結晶中の転位伝搬評価2019
- Author(s)
  谷川智之, 松岡隆志
- Organizer
  第145委員会，第161委員会　合同研究会「窒化物半導体における欠陥低減技術の進展と評価技術の最前線」
- Invited
- Data Source
  KAKENHI-PROJECT-19K22043
[Presentation] 多光子励起による窒化ガリウム結晶の時間分解フォトルミネセンス分光（１）2019
- Author(s)
  谷川智之，小島一信，粕谷拓生，秩父重英，田中敦之，本田善央，天野浩，上向井正裕，片山竜二
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19028
[Presentation] Nondestructive defect characterization of widegap semiconductors using multiphotonexcitation photoluminescence2019
- Author(s)
  T. Tanikawa, M. Uemukai, R. Katayama
- Organizer
  9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] 多光子励起による窒化ガリウム結晶の時間分解フォトルミネセンス分光(1)2019
- Author(s)
  谷川智之，小島一信，粕谷拓生，秩父重英，田中敦之，本田善央，天野浩，上向井正裕，片山竜二
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-19H04532
[Presentation] Defect structure analysis of N-polar InGaN/GaN quantum-well structure2018
- Author(s)
  T. Kiguchi, Y. Kodama, T. Shiraishi, T. J. Konno, and T. Tanikawa
- Organizer
  International Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] Si台座構造上 GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018
- Author(s)
  南部誠明，永田拓実，塩見圭史，藤原康文，大西一生，谷川智之，上向井正裕，片山竜二
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] Influence of Self Absorption in Two-Photon-Excitation Photoluminescence of GaN2018
- Author(s)
  T. Tanikawa, T. Fujita, K. Kojima, S. F. Chichibu, and T. Matsuoka
- Organizer
  The 19th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-19)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K19028
[Presentation] MOVPEによる窒素極性窒化物半導体成長2018
- Author(s)
  松岡隆志，谷川智之，窪谷茂幸
- Organizer
  第47回結晶成長国内会議 (JCCG-47）
- Invited
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] GaNの二光子励起フォトルミネッセンス測定における自己吸収の影響2018
- Author(s)
  谷川智之，小島一信，秩父重英，松岡隆志
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K19028
[Presentation] Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs2018
- Author(s)
  T. Suemitsu，Kiattiwut Prasertsuk，T. Tanikawa，T. Kimura，S. Kuboya，and T. Matsuoka
- Organizer
  2018 MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] 窒素極性GaN MIS-HEMTにおける逆バイアスアニールの効果2018
- Author(s)
  末光哲也，Prasertsuk Kiattiwut，谷川智之，木村健司，窪谷茂幸，松岡隆志
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] MOVPE窒素極性成長による窒化物半導体の新展開2018
- Author(s)
  松岡隆志，窪谷茂幸，谷川智之，加納聖也
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] MOVPE窒素極性成長による窒化物半導体の新展開2018
- Author(s)
  松岡隆志，窪谷茂幸，谷川智之，加納聖也
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] Defect structure analysis of N-polar InGaN/GaN quantum-well structure2018
- Author(s)
  T. Kiguchi, Y. Kodama, T. Shiraishi, T. J. Konno, and T. Tanikawa
- Organizer
  International Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] Reverse-Bias-Induced Virtual Gate Phenomenon in N-Polar GaN HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, and T. Matsuoka
- Organizer
  2018 MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] N極性InGaN/GaN量子井戸構造における構造の不均一性2018
- Author(s)
  木口賢紀，白石貴久，兒玉裕美子，今野豊彦，谷川智之
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] Reverse bias annealing effects in N-polar GaN/AlGaN/GaN MIS-HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] Growth of Indium-Including Nitride Semiconductors2018
- Author(s)
  T. Matsuoka，S. Kuboya，and T. Tanikawa
- Organizer
  The 19th International Conference on Metalogranic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] Reverse Bias Annealing Effects in N-polar GaN/AlGaN/GaN MIS-HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, and T. Matsuoka
- Organizer
  Compound Semiconductor Week (CSW) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] 窒素極性GaN MIS-HEMTにおける逆バイアスアニールの効果2018
- Author(s)
  末光哲也, K. Prasertsuk, 谷川智之, 木村健司, 窪谷茂幸, 松岡隆志
- Organizer
  第79回応用物理学会秋季学術講演会講演会
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Growth of Indium-Including Nitride Semiconductors2018
- Author(s)
  T. Matsuoka，S. Kuboya，and T. Tanikawa
- Organizer
  The 19th International Conference on Metalogranic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] MOVPEによる窒素極性窒化物半導体成長2018
- Author(s)
  松岡隆志，谷川智之，窪谷茂幸
- Organizer
  第47回結晶成長国内会議 (JCCG-47）
- Invited
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] Influence of Self Absorption in Two-Photon-Excitation Photoluminescence of GaN2018
- Author(s)
  T. Tanikawa，T. Fujita，K. Kojima，S. F. Chichibu，and T. Matsuoka
- Organizer
  The 19th International Conference on Metalogranic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] Evaluation of deep levels in N-polar GaN epitaxial layers by photo-current DLTS: An approach to reveal the self-compensation effect of Mg doping in p-type GaN2018
- Author(s)
  H. Okamoto, H. Suzuki, R. Nonoda, and T. Tanikawa
- Organizer
  4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] InGaN/GaNヘテロ構造のRF-MBE成長における格子緩和過程のその場観察：格子極性の影響2018
- Author(s)
  谷川智之，山口智広，藤川誠司，佐々木拓生，高橋正光，松岡隆志
- Organizer
  第47回結晶成長国内会議 (JCCG-47）
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] Reverse bias annealing effects in N-polar GaN/AlGaN/GaN MIS-HEMTs2018
- Author(s)
  T. Suemitsu, K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] InGaN/GaNヘテロ構造のRF-MBE成長における格子緩和過程のその場観察：格子極性の影響2018
- Author(s)
  谷川智之，山口智広，藤川誠司，佐々木拓生，高橋正光，松岡隆志
- Organizer
  第47回結晶成長国内会議 (JCCG-47）
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] High-temperature carrier dynamics responsible for a non-radiative process in InGaN nanodisks fabricated by top-down nanotechnology2018
- Author(s)
  Y. Chen，T. Kiba，J. Takayama，A. Higo，T. Tanikawa，S. Samukawa，and A. Murayama
- Organizer
  12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] MOVPEによる窒素極性窒化物半導体成長2018
- Author(s)
  松岡隆志, 谷川智之, 窪谷茂幸
- Organizer
  第47回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] N極性InGaN/GaN量子井戸構造における構造の不均一性2018
- Author(s)
  木口賢紀，白石貴久，兒玉裕美子，今野豊彦，谷川智之
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] Evaluation of deep levels in N-polar GaN epitaxial layers by photo-current DLTS: An approach to reveal the self-compensation effect of Mg doping in p-type GaN2018
- Author(s)
  H. Okamoto, H. Suzuki, R. Nonoda, and T. Tanikawa
- Organizer
  4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] Influence of Self Absorption in Two-Photon-Excitation Photoluminescence of GaN2018
- Author(s)
  T. Tanikawa，T. Fujita，K. Kojima，S. F. Chichibu，and T. Matsuoka
- Organizer
  The 19th International Conference on Metalogranic Vapor Phase Epitaxy (ICMOVPE-XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] Reverse-bias-induced virtual gate phenomenon in N-polar GaN HEMTs2018
- Author(s)
  T. Suemitsu，Kiattiwut Prasertsuk，T. Tanikawa，T. Kimura，S. Kuboya，and T. Matsuoka
- Organizer
  2018 MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] High-temperature carrier dynamics responsible for a non-radiative process in InGaN nanodisks fabricated by top-down nanotechnology2018
- Author(s)
  Y. Chen，T. Kiba，J. Takayama，A. Higo，T. Tanikawa，S. Samukawa，and A. Murayama
- Organizer
  12th International Conference on Excitonic and Photonic Processes in Condensed Matter and Nano Materials (EXCON 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] 窒素極性GaN MIS-HEMTにおける逆バイアスアニールの効果2018
- Author(s)
  末光哲也，Prasertsuk Kiattiwut，谷川智之，木村健司，窪谷茂幸，松岡隆志
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimuram T. Suemitsu, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] Reduction of gate leakage current in N-polar GaN metal-insulator-semiconductor high electron mobility transistors2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, A. Miura, S. Kuboya, T. Suemitsu, and T. Matsuoka
- Organizer
  2017 Annual Meeting of Excellent Graduate Schools for Materials Integration Center and Materials Science Center
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] N極性GaN HEMTsにおけるMIS構造導入によるリーク電流の低減2017
- Author(s)
  プラスラットスックキャッティウット、三浦輝紀、田中真二、谷川智之、木村健司、窪谷茂幸、末光哲也、松岡隆志
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜，横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] N-polar GaN MIS-HEMTs on Small Off-cut Sapphire Substrate for Flat Interface2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  ワイドギャップ半導体光・電子デバイス第162委員会平成29年度特別事業企画委員会100回記念特別公開シンポジウム　『ワイドギャップ半導体の基盤技術と将来展望』～パワー半導体を中心として～
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimuram T. Suemitsu, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Threshold Voltage Engineering of Recessed MIS-Gate N-polar GaN HEMTs2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] MOVPE Growth of N-polar GaN/AlGaN/GaN Inverted HEMT Structures and Their Electrical Properties2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, A. Miura, S. Kuboya, T. Suemitsu, and T. Matsuoka
- Organizer
  3rd Intensive Discussion on Growth of Nitride Semiconductor (IDGN-3)
- Place of Presentation
  東北大学金属材料研究所
- Year and Date
  2017-01-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] 有機金属気相成長法によるN極性InGaNチャンネルHEMT構造の作製2017
- Author(s)
  田中真二，プラスラットスック・キャッティウット，木村健司，谷川智之，末光哲也，松岡隆志
- Organizer
  第134回東北大学金属材料研究所講演会
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] N-polar GaN/AlGaN/GaN MIS-HEMTs on sapphire substrates with small off-cut for flat interface by MOVPE2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimuram T. Suemitsu, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05325
[Presentation] Threshold Voltage Engineering of Recessed MIS-Gate N-polar GaN HEMTs2017
- Author(s)
  K. Prasertsuk, T. Tanikawa, T. Kimura, S. Kuboya, T. Suemitsu, T. Matsuoka
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Control of Impurity Concentration of Undoped N-polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy2016
- Author(s)
  T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] Improvement of Emission Wavelength Homogeneity in N-polar (000-1) InGaN Grown by Metalorganic Vapor Phase Epitaxy2016
- Author(s)
  R. Nonoda, T. Tanikawa, K. Shojiki, S. Tanaka, S. Kuboya, R. Katayama, and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Hilton Orlando Lake Buena Vista, Orlando, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] N 極性 n 型 GaN 上 Ni ショットキーダイオード特性の蒸着法依存性2016
- Author(s)
  寺島勝哉, 野々田亮平, 正直花奈子, 谷川智之, 松岡隆志, 鈴木秀明, 岡本浩
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ，新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] MOVPE Growth of N-polar GaN/AlxGa1-xN/GaN Heterostructure on Small Off-cut Substrate for Flat Interface2016
- Author(s)
  K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2016
- Place of Presentation
  富山国際会議場
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18074
[Presentation] Influence of Growth Conditions on Transport Properties in Undoped N-polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy2016
- Author(s)
  T. Tanikawa, K. Prasertsuk, A. Miura, S. Kuboya, R. Katayama, and T. Matsuoka
- Organizer
  The 4th International Conference on Light-Emitting Devices and Their Industrial Applications（LEDIA’16)
- Place of Presentation
  パシフィコ横浜，横浜
- Year and Date
  2016-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] MOVPE Growth of N-polar GaN/AlGaN/GaN Heterostructure on Small Off-cut Substrate for Flat Interface2016
- Author(s)
  K. Prasertsuk, S. Tanaka, T. Tanikawa, K. Shojiki, T. Kimura, A. Miura, R. Nonoda, F. Hemmi, S. Kuboya, R. Katayama, T. Suemitsu, and T. Matsuoka
- Organizer
  Compound Semiconductor Week 2016
- Place of Presentation
  富山国際会議場, 富山
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03857
[Presentation] 横型疑似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計2015
- Author(s)
  三谷悠貴，片山竜二，劉陳燁，正直花奈子，谷川智之，窪谷茂幸，松岡隆志
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会第7回窒化物半導体研究会
- Place of Presentation
  東北大学片平さくらホール、宮城県仙台市
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates2015
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会第7回窒化物半導体研究会
- Place of Presentation
  東北大学片平さくらホール、宮城県仙台市
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Polarity-controlled MOVPE growth of GaN on PLD-AlN templates2015
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  The 34th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖、滋賀県守山市
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学片平さくらホール（宮城県仙台市）
- Year and Date
  2015-05-07 – 2015-05-08
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Investigation of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by m-line Spectroscopy
- Author(s)
  N. Yoshinogawa, R. Katayama, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  La-Foret Shuzenji, Shizuoka, Japan
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] MOVPE Growth of GaN onto PLD-Grown AlN Interlayer on GaN Templates
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’15)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2015-04-22 – 2015-04-23
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] 横型擬似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計
- Author(s)
  三谷悠貴, 片山竜二, 劉陳燁, 正直花奈子, 谷川智之, 窪谷茂幸, 松岡隆志
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学片平さくらホール（宮城県仙台市）
- Year and Date
  2015-05-07 – 2015-05-08
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Accurate Determination of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by Spectroscopic m-line Technique
- Author(s)
  R. Katayama, N. Yoshinogawa, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wrocław Congress Center, Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Design of the Transverse Quasi-Phase Matched AlN Waveguides for Deep-UV Second Harmonic Generation
- Author(s)
  Y. Mitani, R. Katayama, J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  The 34th Electronic Materials Symposium
- Place of Presentation
  La-Foret Biwako, Shiga, Japan
- Year and Date
  2015-07-15 – 2015-07-17
- Data Source
  KAKENHI-PROJECT-26600082

1. Katayama Ryuji (40343115)

# of Collaborated Projects: 3 results

# of Collaborated Products: 29 results
2. Matsuoka Takashi (40393730)

# of Collaborated Projects: 2 results

# of Collaborated Products: 30 results
3. 上向井正裕 (80362672)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
4. Kojima Kazunobu (30534250)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
5. 横山弘之 (60344727)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 窪谷茂幸 (70583615)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
7. 花田貴 (80211481)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 川原村敏幸 (00512021)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 斗内政吉 (40207593)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 芹田和則 (00748014)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 木村真一 (10252800)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 寒川誠二

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
13. 村山明宏

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
14. 正直花奈子

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

TANIKAWA TOMOYUKI 谷川 智之

Tanikawa Tomoyuki 谷川 智之

Research Projects

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Co-Researchers

Photon terahertz wave conversion modeling in local fields and its application to semiconductor analysis

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光量子コンピューティング用窒化物半導体モノリシック光集積デバイスに関する研究

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Nondestructive measurement of crystal defects using multiphoton excitation photoluminescencePrincipal Investigator

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Imaging of threading dislocations by hyper-Raman scatteringPrincipal Investigator

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Nondestructive measurement of crystal defects using multiphoton excitation photoluminescencePrincipal Investigator

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Realization of a method to visualize the distribution of threading dislocations and point defects in semiconductor crystals

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Control of transport properties in nitride semiconductors by introducing polarization effectsPrincipal Investigator

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Development of monolithic cavity wavelength converter made of widegap semiconductors

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Crystal Growth of N-polar Nitride Semiconductor Heterostructures with Two-Dimensional Electron Gas

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Control of Polarization-Induced Electric Field in Nitride-Semiconductor-Based DevicesPrincipal Investigator

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Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light Sources

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[Journal Article] Demonstration of violet-DFB laser with fairly small temperature dependence in current-light characteristics2024

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Data Source

[Journal Article] Polarity Inversion of GaN via AlN Oxidation Interlayer Using Metal-Organic Vapor Phase Epitaxy2023

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DOI

TANIKAWA TOMOYUKI 谷川智之

Tanikawa Tomoyuki 谷川智之