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WU Nan-jan  呉 南健

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… Alternative Names

〓 南健  ゴ ナンケン

呉 南建  ゴ ナンケン

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Researcher Number 00250481
Affiliation (based on the past Project Information) *help 1998 – 1999: Fac.of Electro-Communications, Univ.of Electro-Communications, Ass.Pro., 電気通信学部, 助教授
1998: Fac.of Electro-Communications, Univ.of Electro-Communications, Ass.Pro., 電子工学科, 助教授
1997: Hokkaido Univ., Grad.School of Eng.Res.Assoc., 大学院・工学研究科, 助手
1994 – 1996: 北海道大学, 工学部, 助手
Review Section/Research Field
Principal Investigator
電子デバイス・機器工学
Except Principal Investigator
電子デバイス・機器工学 / Electronic materials/Electric materials / 極微細構造工学
Keywords
Principal Investigator
InP / ダイオード / ショットキ / スイッチング / 化合物半導体 / atomic force microscope / self-organization / anodic oxidization / Schottky diode / ショットキー … More / テラヘルツ / GaAs / 原子間力顕微鏡 / 自己組織化 / 陽極酸化 / ショットキーダイオード / Switching / High Speed / Diode / Schottky / 高速 / intrinsic semiconductor island / SET circuit / single-electron-tunneling / logic device / cellular automaton / 学位セル / セリオートマトン / 量子 / 単位セル / 電気化学 / トンネル接合 / セルオートマトン / 電気化学プロセス / 制御 / バリア / 整流 … More
Except Principal Investigator
単電子 / electrochemical process / Schottky barrier / 電気化学プロセス / ショットキー障壁 / インジウムリン / HEMT / BDD / 論理回路 / シングルエレクトロン / indium phosphide / gate circuit / digital circuit / tunnel / single electron / majority logic / 集積 / 多数決 / ゲート回路 / ディジタル回路 / トンネル / 単電子回路 / 多数決論理 / Neuron / Hopfield Network / Boltzmann Machine / Neural Network / Single-Electron Tunneling / ホップフィールドネットワーク / ボルツマンマシン / ニューロン / ニューラルネットワーク / ultrathin Si control layer / interface control / シリコン超薄膜制御層 / 界面制御 / Schottky barrier height / nano metal particle / Fermi-level pinning / metal-semiconductor interface / Schottky limit / パルス法 / ショットキー障壁高 / 金属微粒子 / フェルミ準位ピンニング / 半導体界面 / 金属 / ショットキー極限 / binary decision diagram / logic circuit / SET / Single electron / 二部決定グラフ / ロジック / 二分決定グラフ / Schottky gate / single electron transistor / quantum wire transistor / split gate / in-plane gate / 2DEG / quantum structure / ショットキーゲット / ショットキーゲート / 単電子トランジスタ / 量子細線トランジスタ / スプリットゲート / インプレーンゲート / 2次元電子ガス / 量子構造 / optical communication system / micro-wave devices / optoelectronic ICs / FET / 光通信システム / マイクロ波デバイス / 光電子集積回路 / 電界効果トランジスタ Less
  • Research Projects

    (12 results)
  • Co-Researchers

    (12 People)
  •  Preparation of tera-Herty-band GaAs Schottky diodePrincipal Investigator

    • Principal Investigator
      YASUNAGA Hitoshi, 呉 南健
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      The University of Electro-Communications
  •  Single-electron device based on the majority logic.

    • Principal Investigator
      AMEMIYA Yoshihito
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  High Speed InP Schottky Power RectifierPrincipal Investigator

    • Principal Investigator
      WU Nan-Jian
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      The University of Electro-Communications
      Hokkaido University
  •  Implementation of Ultra Micro Boltzmann Machine Neuron

    • Principal Investigator
      AKAZAWA Masamichi
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Single-electron devices based on the binary decision diagram.

    • Principal Investigator
      AMEMIYA Yoshihito
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkaido University
  •  Cellular-Automaton Circuits Using Single-Electron-Tunneling JunctionsPrincipal Investigator

    • Principal Investigator
      WU Nan-Jian
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkdai University
  •  化合物半導体におけるショットキバリア値の制御Principal Investigator

    • Principal Investigator
      呉 南健
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkaido University
  •  Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"

    • Principal Investigator
      HASHIZUME Tamotsu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      極微細構造工学
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  高速スイッチング電源用の化合物半導体パワーショットキ整流ダイオードの研究Principal Investigator

    • Principal Investigator
      呉 南健
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkaido University
  • 1.  AKAZAWA Masamichi (30212400)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 0 results
  • 2.  AMEMIYA Yoshihito (80250489)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 3.  HASHIZUME Tamotsu (80149898)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 4.  HASEGAWA Hideki (60001781)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 5.  YASUNAGA Hitoshi (40017330)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 6.  FUJIKURA Hajime (70271640)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  SEKI Shouhei
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  MOTOHISA Jyunichi (60212263)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  ASAI Tetsuya (00312380)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  YHO Kanji (60220539)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  SAKAMOTO Katsuyoshi (20251704)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  石井 宏辰
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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