GOTO Tetsiua 後藤哲也

Researcher Number	00359556
Other IDs
Affiliation (based on the past Project Information) *help	2023: 公益財団法人国際科学振興財団, その他部局等, 特任研究員 2022: 東北大学, 未来科学技術共同研究センター, 特任教授 2019 – 2021: 東北大学, 未来科学技術共同研究センター, 教授 2008 – 2014: Tohoku University, 未来科学技術共同研究センター, 准教授 2009: Tohoku University, 未来科学共同研究センター, 准教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Engineering / Science and Engineering
Keywords	Principal Investigator 薄膜トランジスタ / マグネトロンスパッタ / 自己整合的しきい値電圧制御 / MONOS構造トランジスタ / しきい値電圧制御 / MONOS型トランジスタ / しきい値電圧チューニング / 電荷注入 / MONOS / しきい値電圧ばらつき … More / ポリシリコン / キセノン / IGZO / 回転マグネットスパッタ / シリコンゲルマニウム / ゲルマニウム … More Except Principal Investigator 不揮発性メモリ / RFマグネトロンスパッタ法 / ECRスパッタ法 / 強誘電体薄膜 / 高周波(RF)マグネトロンスパッタ法 / 電子サイクロトロン共鳴(ECR)スパッタ法 / Si表面原子レベル平坦化 / 不揮発性多値メモリ / 高周波（RF）マグネトロンスパッタ法 / 電子サイクロトロン共鳴（ECR）スパッタ法 / 高誘電率薄膜 / 強誘電体 / 電荷蓄積 / 分極 / 3次元構造 / シリサイド / ラフネス / 面方位 / プラズマプロセス / シリコン表面平坦化 / MOSトランジスタ / 半導体製造装置 / 半導体製造プロセス / LSI / MOSFET / シリコン Less

ポリイミド基板上に集積した多数TFTの自己整合的な特性ばらつき均一化技術の確立Principal Investigator
- Principal Investigator
  
  後藤哲也
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Foundation for Advancement of International Science
  Tohoku University
The invention of hafnium-based multi-bit non-volatile memory utilizing polarization/charge trap smart functions
- Principal Investigator
  
  Ohmi Shun-ichiro
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
Development of high-performance oxide-semiconductor thin-film transistors using rotation magnet sputtering technologyPrincipal Investigator
- Principal Investigator
  
  GOTO Tetsuya
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface
- Principal Investigator
  
  OHMI Tadahiro
- Project Period (FY)
  2010 – 2014
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tohoku University
Development of Germanium Thin Film Transistor for Large Size LiquidCrystal Display with Low Electrical Power Consumption and High DefinitionPrincipal Investigator
- Principal Investigator
  
  GOTO Tetsiua
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University

All 2023 2022 2021 2020 2019 2015 2014 2013 2012 2010 2009 2008 Other

All Journal Article Presentation Patent

[Journal Article] Evaluation of Silicon Nitride Film Formed Using Magnetic-Mirror Confined Plasma Source2019
- Author(s)
  Tetsuya Goto, Seiji Kobayashi, Yuki Yabuta, and Shigetoshi Sugawa
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers2015
- Author(s)
  Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi, Yutaka Kamata, Yuki Kumagai, and Katsuhiko Shibusawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 4S Pages: 04DA04-04DA04
- DOI
  10.7567/jjap.54.04da04
- NAID
  210000144951
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010, KAKENHI-PROJECT-24360129, KAKENHI-PROJECT-26820121
[Journal Article] Low-cost Xe sputtering of amorphous In-Ga-Zn-O thin-film transistors by rotation magnet sputtering incorporating a Xe recycle-and-supply system2014
- Author(s)
  T. Goto, S. Sugawa and T. Ohmi
- Journal Title
  
  J. Vac. Sci. Technol. A
  
  Volume: 32 Issue: 2
- DOI
  10.1116/1.4835775
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760248
[Journal Article] Amorphous In-Ga-Zn-O thin-film transistors prepared by magnetron sputtering using Kr and Xe instead of Ar2014
- Author(s)
  Tetsuya Goto, Shigetoshi Sugawa and Tadahiro Ohmi
- Journal Title
  
  Journal of the Society for Information Display
  
  Volume: 印刷中
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760248
[Journal Article] Amorphous InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering Using Kr and Xe Instead of Ar2014
- Author(s)
  T. Goto, S. Sugawa and T. Ohmi
- Journal Title
  
  J. Soc. Info. Disp.
  
  Volume: (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760248
[Journal Article] Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors2013
- Author(s)
  Tetsuya Goto, Shigetoshi Sugawa and Tadahiro Ohmi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 5R Pages: 50203-50203
- DOI
  10.7567/jjap.52.050203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760248
[Journal Article] Low Contact Resistivity with Low Silicide/p^+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors2010
- Author(s)
  Hiroaki Tanaka, Tatsunori Isogai, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  210000068161
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000010
[Journal Article] Deposition of Microcrystalline Si1-xGex by RF Magnetron Sputtering on SiO_2 Substrates2009
- Author(s)
  A.Hiroe, T.Goto, 他
- Journal Title
  
  Japanese Journal of Applied Physics 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686021
[Journal Article] Rotation Magnet Sputtering: Damage-Free Novel Magnetron Sputtering Using Rotating Helical Magnet with Very High Target Utilization2009
- Author(s)
  Tetsuya Goto, Takaaki Matsuoka, Tadahiro Ohmi
- Journal Title
  
  Journal of Vacuum Science & Technology A,, J. Vac. Sci. Technol. A 27
  
  Pages: 653-659
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686021
[Journal Article] Deposition of Microcrystalline Si_1-xGex by RF Magnetron Sputtering on Si0_2 Substrates2009
- Author(s)
  A. Hiroe, T. Goto, 他
- Journal Title
  
  Japanese Journal of Applied Physics 48 (In the press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686021
[Journal Article] Rotation Magnet Sputtering : Damage-Free Novel Magnetron Sputtering Using Rotating Helical Magnet with Very High Target Utilization2009
- Author(s)
  T.Goto, 他
- Journal Title
  
  Journal of Vacuum Science and Technology A 27
  
  Pages: 653-659
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686021
[Journal Article] Deposition of Microcrystalline Si1-xGex by RF Magnetron Sputtering on SiO2 Substrates2009
- Author(s)
  Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto,, Tadahiro Ohmi
- Journal Title
  
  Jpn. J. Appl. Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686021
[Journal Article] Microcrystalline Si1-xGex Deposited by Magnetron Sputtering2008
- Author(s)
  A. Hiroe, T. Goto, A. Teramoto,, T. Ohmi
- Journal Title
  
  ECS Transactions Thin Film Transistors Vol.16No.9
  
  Pages: 183-192
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] 酸化物半導体装置の製造方法2012
- Inventor(s)
  後藤哲也
- Industrial Property Rights Holder
  東北大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2012-266753
- Filing Date
  2012-12-05
- Data Source
  KAKENHI-PROJECT-24760248
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  大見忠弘、後藤哲也、松岡孝明
- Industrial Property Rights Holder
  国立大学法人東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-16
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  後藤哲也、大見忠弘、松岡孝明
- Industrial Property Rights Holder
  東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-16
- Overseas
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  後藤哲也、大見忠弘、松岡孝明
- Industrial Property Rights Holder
  東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-22
- Overseas
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  大見忠弘、後藤哲也、松岡孝明
- Industrial Property Rights Holder
  国立大学法人東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-23
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  大見忠弘、後藤哲也、松岡孝明
- Industrial Property Rights Holder
  国立大学法人東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-16
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] 回転マグネットスパッタ装置2009
- Inventor(s)
  後藤哲也、大見忠弘
- Industrial Property Rights Holder
  東北大学、東京エレクトロン(株)
- Industrial Property Number
  2009-118169
- Filing Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  後藤哲也、大見忠弘、松岡孝明
- Industrial Property Rights Holder
  東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-29
- Overseas
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  後藤哲也、大見忠弘、松岡孝明
- Industrial Property Rights Holder
  東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-22
- Overseas
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  後藤哲也、大見忠弘、松岡孝明
- Industrial Property Rights Holder
  東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-17
- Overseas
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] 回転マグネットスパッタ装置2009
- Inventor(s)
  大見忠弘、後藤哲也
- Industrial Property Rights Holder
  国立大学法人東北大学、東京エレクトロン(株)
- Industrial Property Number
  2009-118169
- Filing Date
  2009-05-15
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  大見忠弘、後藤哲也、松岡孝明
- Industrial Property Rights Holder
  国立大学法人東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-22
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  大見忠弘、後藤哲也、松岡孝明
- Industrial Property Rights Holder
  国立大学法人東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-29
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  大見忠弘、後藤哲也、松岡孝明
- Industrial Property Rights Holder
  国立大学法人東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-17
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  後藤哲也、大見忠弘、松岡孝明
- Industrial Property Rights Holder
  東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-16
- Overseas
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  大見忠弘、後藤哲也、松岡孝明
- Industrial Property Rights Holder
  国立大学法人東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-30
- Data Source
  KAKENHI-PROJECT-20686021
[Patent] マグネトロンスパッタ装置2009
- Inventor(s)
  後藤哲也、大見忠弘、松岡孝明
- Industrial Property Rights Holder
  東北大学、東京エレクトロン(株)
- Filing Date
  2009-09-30
- Overseas
- Data Source
  KAKENHI-PROJECT-20686021
[Presentation] MONOS 型低温ポリシリコン TFT におけるしきい値電圧制御2023
- Author(s)
  後藤哲也，諏訪智之，片山慶太, 西田脩, 池上浩, 須川成利
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] MONOS 型ポリシリコンTFT でのしきい値電圧制御に関する検討2023
- Author(s)
  後藤哲也，諏訪智之，須川成利
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] MONOS 型ポリシリコンTFT でのしきい値電圧制御に関する検討2023
- Author(s)
  後藤哲也，諏訪智之，須川成利
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Threshold Voltage Control of LTPS TFTs with MONOS Structure2023
- Author(s)
  Tetsuya Goto, Tomoyuki Suwa, Keita Katayama, Shu Nishida, Hiroshi Ikenoue, and Shigetoshi Sugawa
- Organizer
  2023 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] Characterization of MONOS-Type Polycrystalline Silicon Thin Film Transistors2023
- Author(s)
  Tetsuya Goto, Tomoyuki Suwa, Keita Katayama, Shu Nishida, Hiroshi Ikenoue, and Shigetoshi Sugawa
- Organizer
  2023Asia-Pacific Workshop on Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] Silicon Nitride Film Formations Using Magnetic-Mirror Confined Plasma System Developed for Minimal Fab System2022
- Author(s)
  Tetsuya Goto, Thai Quoc Cuong, Seiji Kobayashi, Yuki Yabuta, Shigetoshi Sugawa and Shiro Hara
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04194
[Presentation] Silicon Nitride Film Formations Using Magnetic-Mirror Confined PlasmaSystem Developed for Minimal Fab System2022
- Author(s)
  Tetsuya Goto, Thai Quoc Cuong, Seiji Kobayashi, Yuki Yabuta, Shigetoshi Sugawa and Shiro Hara
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of advanced Semiconductor Devices (AWAD)
- Invited
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] ミニマルファブ用ミラー磁場閉じ込めプラズマCVD装置によるジクロロシランガスを用いたシリコン窒化膜形成2021
- Author(s)
  後藤哲也、小林誠二、タイクオッククオン、薮田勇気、須川成利、原史朗
- Organizer
  第 82 回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] プラズマ成膜技術の将来展望2020
- Author(s)
  後藤哲也
- Organizer
  化学工学会　第51回秋季大会（オンライン）（2020）展望講演
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Selective Laser Annealing Technology for LTPS Thin Film Transistors Fabrications2019
- Author(s)
  Tetsuya Goto, Kaname Imokawa, Takahiro Yamada, Kaori Saito, Jun Gotoh, Hiroshi Ikenoue and Shigetoshi Sugawa,
- Organizer
  Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Atomically Flattening of Si Surface of SOI and Isolation-patterned Wafers2014
- Author(s)
  T. Goto, R. Kuroda, N. Akagawa, T. Suwa, A. Teramoto, X. Li, S. Sugawa, T. Ohmi, Y. Kumagai, Y. Kamata, and K. Sibusawa
- Organizer
  The 2014 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tsukuba International Congress Center, つくば
- Year and Date
  2014-09-09
- Data Source
  KAKENHI-PROJECT-22000010
[Presentation] Impact of the Use of Xe and Its Recycling System for Preparing Amorphous InGaZnO Thin Film Transistors by Dual-Target Rotation Magnet Sputtering2013
- Author(s)
  T. Goto, H. Ishii, S. Sugawa, and T. Ohmi
- Organizer
  The Twelfth International Symposium on Sputtering and Plasma Processes (ISSP 2013)
- Place of Presentation
  Kyoto
- Year and Date
  2013-07-10
- Data Source
  KAKENHI-PROJECT-24760248
[Presentation] Electrical Properties of Amorphous InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering with Using Kr and Xe Instead of Ar2013
- Author(s)
  T. Goto, H. Ishii, S. Sugawa, and T. Ohmi
- Organizer
  Society for Information Display International Symposium 2013
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2013-05-23
- Data Source
  KAKENHI-PROJECT-24760248
[Presentation] Spatial Distribution of Properties of a-IGZO Films Deposited by Rotation Magnet Sputtering Incorporating Dual Target Structure2012
- Author(s)
  T. Goto, S. Sugawa, T. Ohmi
- Organizer
  The 19th International Display Workshops (IDW'12), FMC6-3
- Place of Presentation
  Kyoto
- Year and Date
  2012-12-06
- Data Source
  KAKENHI-PROJECT-24760248
[Presentation] Damage-Free, Uniform and High-Target-Utilization Novel Magnetron Sputtering Plasma Source by Rotating Helical Magnet2009
- Author(s)
  T. Goto, N. Seki, T. Matsuoka, T. Ohmi
- Organizer
  AVS 56th International Symposium & Exhibition
- Place of Presentation
  San Jose
- Year and Date
  2009-11-12
- Data Source
  KAKENHI-PROJECT-20686021
[Presentation] Damage-Free, Uniform and High-Target-Utilization Novel Magnetron Sputtering Plasma Source by Rotating Helical Magnet2009
- Author(s)
  T.Goto, N.Seki, T.Matsuoka, T.Ohmi
- Organizer
  AVS 56th International Symposium & Exhibition
- Place of Presentation
  San Jose, USA
- Year and Date
  2009-11-12
- Data Source
  KAKENHI-PROJECT-20686021
[Presentation] μc-Si_<1-x>Ge_x Deposition on SiO_2 by RF Magnetron Sputtering2008
- Author(s)
  A. Hiroe, T. Goto, 他
- Organizer
  2008 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  つくば市
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-20686021
[Presentation] Micro Crystalline Si1-xGex Deposited by Magnetron Sputtering2008
- Author(s)
  Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto,, Tadahiro Ohmi
- Organizer
  PACIFIC RIM MEETING ON ELECTROCHEMICAL AND SOLID-STATE SCIENCE (PRiME2008)The Electrochemical Society, Meeting Abstracts
- Place of Presentation
  Honolulu, Hawaii(CD-ROM)
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-20686021
[Presentation] μc- Si1-xGex Deposition on SiO2 by RF Magnetron Sputtering2008
- Author(s)
  Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto,, Tadahiro Ohmi
- Organizer
  Extended Abstracts of the 2008 International Conference on SOLID STATE DEVICES AND MATERIALS
- Place of Presentation
  Tsukuba
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-20686021
[Presentation] Impact of the Use of Xe and Its Recycling System for Preparing Amorphous InGaZnO Thin Film Transistors by Dual-Target Rotation Magnet Sputtering
- Author(s)
  Tetsuya Goto, Hidekazu Ishii, Shigetoshi Sugawa, and Tadahiro Ohmi
- Organizer
  The Twelfth International Symposium on Sputtering and Plasma Processes (ISSP 2013)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-24760248
[Presentation] Spatial Distribution of Properties of a-IGZO Films Deposited by　Rotation Magnet Sputtering Incorporating Dual Target Structure
- Author(s)
  Tetsuya Goto, Shigetoshi Sugawa and Tadahiro Ohmi
- Organizer
  International Display Workshops (IDW’12)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-24760248
[Presentation] Electrical Properties of Amorphous InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering Using Kr and Xe Instead of Ar
- Author(s)
  T. Goto, S. Sugawa and T. Ohmi
- Organizer
  Society for Information Display International Symposium 2013
- Place of Presentation
  Canada, Vancouver
- Data Source
  KAKENHI-PROJECT-24760248
[Presentation] Application of Rotation Magnet Sputtering Technology to a-IGZO Film Depositions
- Author(s)
  T. Goto, S. Sugawa and T. Ohmi
- Organizer
  Society for Information Display International Symposium 2014
- Place of Presentation
  USA, San Diego
- Invited
- Data Source
  KAKENHI-PROJECT-24760248

1. SUWA Tomoyuki (70431541)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
2. OHMI Tadahiro (20016463)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
3. HIRAYAMA Masaki (70250701)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. Ohmi Shun-ichiro (30282859)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 長岡克己 (80370302)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 舟窪浩 (90219080)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

GOTO Tetsiua 後藤 哲也

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ポリイミド基板上に集積した多数TFTの自己整合的な特性ばらつき均一化技術の確立Principal Investigator

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The invention of hafnium-based multi-bit non-volatile memory utilizing polarization/charge trap smart functions

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Development of high-performance oxide-semiconductor thin-film transistors using rotation magnet sputtering technologyPrincipal Investigator

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Study on fabrication process of 3-D structured MOS transistor having atomically flat gate insulator/Si interface

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Development of Germanium Thin Film Transistor for Large Size LiquidCrystal Display with Low Electrical Power Consumption and High DefinitionPrincipal Investigator

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[Journal Article] Evaluation of Silicon Nitride Film Formed Using Magnetic-Mirror Confined Plasma Source2019

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[Journal Article] Atomically flattening of Si surface of silicon on insulator and isolation-patterned wafers2015

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[Journal Article] Low-cost Xe sputtering of amorphous In-Ga-Zn-O thin-film transistors by rotation magnet sputtering incorporating a Xe recycle-and-supply system2014

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[Journal Article] Amorphous In-Ga-Zn-O thin-film transistors prepared by magnetron sputtering using Kr and Xe instead of Ar2014

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[Journal Article] Amorphous InGaZnO Thin-Film Transistors Prepared by Magnetron Sputtering Using Kr and Xe Instead of Ar2014

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[Journal Article] Impact of the Use of Xe on Electrical Properties in Magnetron-Sputtering Deposited Amorphous InGaZnO Thin-Film Transistors2013

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[Journal Article] Low Contact Resistivity with Low Silicide/p^+-Silicon Schottky Barrier for High-Performance p-Channel Metal-Oxide-Silicon Field Effect Transistors2010

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[Journal Article] Deposition of Microcrystalline Si1-xGex by RF Magnetron Sputtering on SiO_2 Substrates2009

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[Journal Article] Rotation Magnet Sputtering: Damage-Free Novel Magnetron Sputtering Using Rotating Helical Magnet with Very High Target Utilization2009

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[Journal Article] Deposition of Microcrystalline Si_1-xGex by RF Magnetron Sputtering on Si0_2 Substrates2009

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[Journal Article] Rotation Magnet Sputtering : Damage-Free Novel Magnetron Sputtering Using Rotating Helical Magnet with Very High Target Utilization2009

GOTO Tetsiua 後藤哲也