Ohtake Akihiro 大竹晃浩

… Alternative Names

OHTAKE Akihiro 大竹晃浩

大竹晃浩オオタケアキヒロ

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Researcher Number	30267398
Other IDs
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員
Affiliation (based on the past Project Information) *help	2023 – 2024: 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主幹研究員 2015: 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主幹研究員 2013 – 2014: 独立行政法人物質・材料研究機構, 先端フォトニクス材料研究ユニット, 主幹研究員 2012: 物質材料研究機構, 量子ドットセンター, 主幹研究員 2012: 独立行政法人物質・材料研究機構, その他部局等, 研究員 … More 2012: 独立行政法人物質・材料研究機構, 先端フォトニクス材料, 主幹研究員 2012: 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット・量子ナノ構造グループ, 主幹研究員 2011 – 2012: 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主幹研究員 2011: 物質・材料研究機構, 量子ドットセンター, 主幹研究員 2010: 独立行政法人物質・材料研究機構, 量子ドットセンター, 主幹研究員 2010: 電気通信大学, 物質・材料研究機構量子ドットセンター, 主幹研究員 1995: 早稲田大学, 理工学部, 助手 Less
Review Section/Research Field	Principal Investigator Basic Section 29020:Thin film/surface and interfacial physical properties-related / Nanomaterials/Nanobioscience / Material processing/treatments Except Principal Investigator Basic Section 30010:Crystal engineering-related / Nanostructural physics / Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 分子線エピタキシー / 遷移金属ダイカルコゲナイド / ガリウムヒ素 / 表面再配列 / 希薄窒化半導体 / 表面構造 / 化合物半導体 / ナノ表面・界面 / 薄膜成長動的過程 / 表面構造解析 / 反射高速電子回折法 / 化合物半導体表面 … More Except Principal Investigator … More 結晶成長 / 転位 / InAs / GaAs / 赤外線センサー / 量子情報 / インジウム燐 / もつれ合い / 偏光 / エレクトロルミネッセンス素子 / 化合物半導体 / もつれ合い光子対 / ガリウム砒素 / 量子通信 / もつれ光子対 / 自己形成 / 分子線エピタキシー / 量子ドット / エピタキシャル / マイクロ・ナノデバイス / 半導体物性 / Ⅲ－Ⅴ族化合物半導体 / エピタキシャル成長 / MOSFET / 表面・界面物性 / Ⅲ-Ⅴ族化合物半導体 / 電子・電気材料 / GaAs表面 / Mn原子ワイヤ / 走査トンネル顕微鏡 / Ｍｎ原子ワイヤ / 強磁性 / 電子回折法 / 第一原理計算 / 初期吸着構造 / III-V族化合物半導体表面 Less

Fabrication of new infrared photodetectors by using defects at lattice-mismatched interface
- Principal Investigator
  
  間野高明
- Project Period (FY)
  2024 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institute for Materials Science
カルコゲナイド系層状物質の高品質ヘテロ積層構造：ＭＢＥ法による成長技術の開発Principal Investigator
- Principal Investigator
  
  大竹晃浩
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  National Institute for Materials Science
Self-assemmbly of ideal quantum dots by droplet epitaxy
- Principal Investigator
  
  Mano Takaaki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Nanostructural physics
- Research Institution
  National Institute for Materials Science
Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
- Principal Investigator
  
  YASUDA Tetsuji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute of Advanced Industrial Science and Technology
Development of the novel ferromagnetic materials by the two-dimensional structure control and clarification of the mechanism of the ferromagnetism for Mn-GaAs
- Principal Investigator
  
  NAKAMURA Jun
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  The University of Electro-Communications
Surface atomic structure of compound semiconductors treated with active nitrogen speciesPrincipal Investigator
- Principal Investigator
  
  OHTAKE Akihiro
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Nanomaterials/Nanobioscience
- Research Institution
  National Institute for Materials Science
半導体ヘテロ接合界面形成の動的過程評価Principal Investigator
- Principal Investigator
  
  大竹晃浩
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Material processing/treatments
- Research Institution
  Waseda University

All 2023 2015 2014 2013 2012 2011 2010 Other

All Journal Article Presentation Patent

[Journal Article] Atomic structure of the Se-passivated GaAs(001) surface revisited2023
- Author(s)
  Ohtake Akihiro、Suga Takayuki、Goto Shunji、Nakagawa Daisuke、Nakamura Jun
- Journal Title
  
  Scientific Reports
  
  Volume: 13 Issue: 1
- DOI
  10.1038/s41598-023-45142-y
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K04592
[Journal Article] Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A2015
- Author(s)
  N. Ha, T. Mano, T. Kuroda, K. Mitsuishi, A. Ohtake, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, and K. Sakoda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 4S Pages: 04DH07-04DH07
- DOI
  10.7567/jjap.54.04dh07
- NAID
  210000145031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289091, KAKENHI-PROJECT-25390011
[Journal Article] Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion2015
- Author(s)
  N. Ha, T. Mano, Y.-L. Chou, Y.-N Wu, S.-J. Cheng, J. Bocquel, P. M. Koenraad, A. Ohtake, Y. Sakuma, K. Sakoda, and T. Kuroda
- Journal Title
  
  Physical Review B
  
  Volume: 92 Issue: 7
- DOI
  10.1103/physrevb.92.075306
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390011, KAKENHI-PROJECT-25289091
[Journal Article] (2)‘Extremely high- and low-density of Ga droplets on GaAs{111}A,B: Surface-polarity dependence2015
- Author(s)
  A. Ohtake, N. Ha, and T. Mano
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 15 Issue: 1 Pages: 485-488
- DOI
  10.1021/cg501545n
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390011
[Journal Article] Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors2014
- Author(s)
  A. Ohtake, T. Mano, N. Miyata, T. Mori, and T. Yasuda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 3
- DOI
  10.1063/1.4862542
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246058
[Journal Article] Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces2014
- Author(s)
  Noriyuki Miyata, Akihiro Ohtake, Masakazu Ichikawa, Takahiro Mori, and Tetsuji Yasuda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 23
- DOI
  10.1063/1.4882643
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246058
[Journal Article] Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions2014
- Author(s)
  A. Ohtake, T. Mano, A. HAgiwara, and J. Nakamura
- Journal Title
  
  Crystal Growth & Design
  
  Volume: 14 Issue: 6 Pages: 3110-3115
- DOI
  10.1021/cg500355f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390011
[Journal Article] Controlled incorporation of Mn in GaAs: Role of surface reconstructions2013
- Author(s)
  Akihiro Ohtake, Atsushi Hagiwara, and Jun Nakamura
- Journal Title
  
  Physical Review
  
  Volume: B 87 Issue: 16
- DOI
  10.1103/physrevb.87.165301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360020
[Journal Article] Atomic-scale characterization of the N incorporation on GaAs(001)2011
- Author(s)
  A. Ohtake
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 110
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22510117
[Journal Article] Atomic scale characterization of the N incorporation in GaAs (001)2011
- Author(s)
  A.Ohtake
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 110 Issue: 3
- DOI
  10.1063/1.3609066
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22510117
[Patent] 表面の平坦性および結晶構造の完全性に優れたGaSb/InAs/S1（111）構造とその形成方法、並びにその構造を用いたMOSデバイスおよび赤外線検出デバイス2013
- Inventor(s)
  宮田典幸, 安田哲二, 大竹晃浩, 真野高明
- Industrial Property Rights Holder
  産業技術総合研究所, 国立研究開発法人物質・材料研究機構
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-195290
- Filing Date
  2013-09-20
- Acquisition Date
  2017-06-09
- Data Source
  KAKENHI-PROJECT-24246058
[Patent] 表面の平坦性および結晶構造の完全性に優れたGaSb/InAs/Si(111)構造とその形成方法、並びにその構造を用いたMOSデバイスおよび赤外検出デバイス2013
- Inventor(s)
  大竹晃浩、間野高明、宮田典幸、安田哲二
- Industrial Property Rights Holder
  大竹晃浩、間野高明、宮田典幸、安田哲二
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-195290
- Filing Date
  2013-09-20
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] (111)A基板上の格子不整合系エピタキシーの諸現象：ドット形成と歪み緩和の理解と制御にむけて2015
- Author(s)
  間野高明, 大竹晃浩, HA Neul, 黒田隆, 佐久間芳樹, 迫田和彰
- Organizer
  第１１回量子ナノ材料セミナー
- Place of Presentation
  電気通信大学
- Year and Date
  2015-12-08
- Invited
- Data Source
  KAKENHI-PROJECT-25390011
[Presentation] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy2015
- Author(s)
  HA Neul, 間野高明, 黒田隆, Shun-Jen Cheng, Paul M. Koenraad, 大竹晃浩, 佐久間芳樹, 迫田和彰
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25390011
[Presentation] Recent development of droplet epitaxy in NIMS: InAs QDs on InP(111)A for telecom-application and reconstruction-dependent Ga droplet formation on GaAs (100)2014
- Author(s)
  T. Mano, A.Ohtake, T. Kuroda, N. Ha, X. Liu, K. Mitsuishi, A. Hagiwara, J. Nakamura, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, and K. Sakoda
- Organizer
  2nd Workshop Droplet Epitaxy of Semiconductor Nanostructures
- Place of Presentation
  フィレンツェ
- Year and Date
  2014-05-16
- Invited
- Data Source
  KAKENHI-PROJECT-25390011
[Presentation] Electrical Characteristics and Thermal Stability of HfO2/GaSb MOS Interfaces Formed on Clean GaSb(100)-c(2×6) Surfaces2013
- Author(s)
  N. Miyata, A. Ohtake, M. Ichikawa, T. Yasuda
- Organizer
  2013 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Atomic Arrangements and structural stability of the Mn adsorbed GaAs(001) surfaces2012
- Author(s)
  Atsushi Hagiwara, Akihiro Ohtake, and Jun Nakamura
- Organizer
  American Vacuum Society 59th International Symposium & Exhibition (AVS-59)
- Place of Presentation
  Tampa, USA
- Year and Date
  2012-10-30
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Initial stage of heteroepitaxy on GaAs(001): adsorbate-induced surface reconstructions2012
- Author(s)
  A.Ohtake
- Organizer
  The Seventeenth International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Nara
- Invited
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Initial nitridation processes of GaAs(001)2012
- Author(s)
  Akihiro Ohtake
- Organizer
  31st International Conference on the Physics of Semiconductors, July 2012
- Place of Presentation
  Zürich, Switzerland
- Data Source
  KAKENHI-PROJECT-22510117
[Presentation] Initial stage of heteroepitaxy on GaAs(001): adsorbate-induced surface reconstructions2012
- Author(s)
  A. Ohtake
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Nara, Japan
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-22510117
[Presentation] Initial stage of heteroepitaxy on GaAs(001): adsorbate-induced surface reconstructions2012
- Author(s)
  Akihiro Ohtake
- Organizer
  17th International Conference on Molecular Beam Epitaxy, September 2012
- Place of Presentation
  Nara, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22510117
[Presentation] Initial stage of heteroepitaxy on GaAs(001): adsorbate-induced surface reconstructions2012
- Author(s)
  Akihiro Ohtake
- Organizer
  The 17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Initial nitridation processes of GaAs(001)2012
- Author(s)
  A. Ohtake
- Organizer
  31st International Conference on the Physics of Semiconductors
- Place of Presentation
  Zurich, Switzerland
- Year and Date
  2012-07-31
- Data Source
  KAKENHI-PROJECT-22510117
[Presentation] 活性窒素種を照射したGaAs(001)表面構造2011
- Author(s)
  大竹晃浩
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県山形市)
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-22510117
[Presentation] Mn-induced surface reconstructions on GaAs(001)2011
- Author(s)
  A.Ohtake, M.Hirayama, Y.Kanno, J.Nakamura
- Organizer
  38th International Symposiutm on Compound Semiconductors
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Mn吸着(2x2)-GaAs(001)表面構造および電子状態2011
- Author(s)
  菅野雄介、大竹晃浩、中村淳
- Organizer
  日本物理学会第67回年次大会
- Place of Presentation
  西宮
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] GaAs(001)-(2x2)Mn表面の原子配列と電子状態評価2011
- Author(s)
  菅野雄介、大竹晃浩、平山基、中村淳
- Organizer
  日本物理学会2011年秋季大会
- Place of Presentation
  富山
- Year and Date
  2011-09-23
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Mn-induced surface reconstructions on GaAs(001)2011
- Author(s)
  Akihiro Ohtake, Motoi Hirayama, Yusuke Kanno, and Jun Nakamura
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS-38)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] 活性窒素種を照射したGaAs(001)表面構造2011
- Author(s)
  大竹晃浩
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-22510117
[Presentation] Mn吸着GaAs(001)表面の原子配列2010
- Author(s)
  大竹晃浩、萩原敦、中村淳
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Mn吸着GaAs(001)表面の原子配列
- Author(s)
  大竹晃浩
- Organizer
  第７３会応用物理学会学術講演会
- Place of Presentation
  松山
- Data Source
  KAKENHI-PROJECT-22360020
[Presentation] Si(111)上でのGaSbヘテロエピタキシーとHfO2/GaSb MOSキャパシタの作製
- Author(s)
  大竹晃浩、間野高明、宮田典幸、森貴洋、安田哲二
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246058
[Presentation] Si(100)上のGaSbナノコンタクトへテロエピ成長とHfO2/GaSb MOS特性
- Author(s)
  宮田典幸、大竹晃浩、市川昌和、森貴洋、安田哲二
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246058

1. Mano Takaaki (60391215)

# of Collaborated Projects: 2 results

# of Collaborated Products: 6 results
2. NAKAMURA Jun (50277836)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
3. YASUDA Tetsuji (90220152)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
4. MAEDA Tatsuro (40357984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. MIYATA Noriyuki (40358130)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
6. NARA Jun (30354145)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. FUJISHIRO Hiroki (60339132)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. ICHIKAWA Masakazu (20343147)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
9. TANAKA Masatoshi (90130400)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. KURODA Takashi (00272659)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
11. 川津琢也 (00444076)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 宮崎英樹 (10262114)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 石田暢之 (10451444)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. SAKUMA Yoshiki

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Ohtake Akihiro 大竹 晃浩

OHTAKE Akihiro 大竹 晃浩

大竹 晃浩 オオタケ アキヒロ

Research Projects

Research Products

Co-Researchers

Fabrication of new infrared photodetectors by using defects at lattice-mismatched interface

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

カルコゲナイド系層状物質の高品質ヘテロ積層構造：ＭＢＥ法による成長技術の開発Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Self-assemmbly of ideal quantum dots by droplet epitaxy

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Valence-band engineering and interface-dipole control for realizing III-V pMOSFET

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of the novel ferromagnetic materials by the two-dimensional structure control and clarification of the mechanism of the ferromagnetism for Mn-GaAs

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Surface atomic structure of compound semiconductors treated with active nitrogen speciesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

半導体ヘテロ接合界面形成の動的過程評価Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Atomic structure of the Se-passivated GaAs(001) surface revisited2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A2015

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] (2)‘Extremely high- and low-density of Ga droplets on GaAs{111}A,B: Surface-polarity dependence2015

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Self-Assembled Growth of Ga Droplets on GaAs(001): Role of Surface Reconstructions2014

Ohtake Akihiro 大竹晃浩

OHTAKE Akihiro 大竹晃浩

大竹晃浩オオタケアキヒロ