• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

YAMADA Keisaku  山田 啓作

ORCIDConnect your ORCID iD *help
Researcher Number 30386734
Other IDs
Affiliation (based on the past Project Information) *help 2010: 筑波大学, 数理物質科学研究科, 教授
2009: ナノ理工学研究機構, 客員教授(専任扱い)
2007 – 2009: 早稲田大学, 附置研究所, 教授
2008: 早稲田大学, ナノ理工学研究機構, 客員教授(専任扱い)
2007: 早稲田大学, ナノ理工学研究機構, 教授
Review Section/Research Field
Except Principal Investigator
Science and Engineering / Electron device/Electronic equipment
Keywords
Except Principal Investigator
ショットキー障壁 / Niシリサイド / メタル・ソース・ドレイン / 極浅接合 / MOSFET / シリコンデバイス / シリコン結晶 / 半導体 / ナノ電子物性科学 / 移動度 … More / ひずみ / シリコン / 電子輸送 / 電子デバイス / 電子物性 / 表面科学 / 不純物ドープ / シリコン結晶シリコンデバイス / ナノデバイス / 集積回路 / 半導体デバイス / メタルゲート / コンビナトリアル手法 / high-k絶縁膜 / ゲートスタック Less
  • Research Projects

    (3 results)
  • Research Products

    (37 results)
  • Co-Researchers

    (6 People)
  •  超平滑界面の耐熱性シリサイド薄膜を用いたメタルソース・ドレインMOSFETの研究

    • Principal Investigator
      大毛利 健治
    • Project Period (FY)
      2008 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Waseda University
  •  新材料ゲートスタック構造に向けた超高速一斉デバイス特性評価手法の開発

    • Principal Investigator
      大毛利 健治
    • Project Period (FY)
      2007
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Waseda University
  •  Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals

    • Principal Investigator
      ENDOH Tetsuo
    • Project Period (FY)
      2007 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Tohoku University

All 2011 2010 2009 2008 2007 Other

All Journal Article Presentation Patent

  • [Journal Article] Influences of carrier transport on drain-current variability of MOSFETs2011

    • Author(s)
      K.Ohmoril, K.Shiraishi, K.Yamada
    • Journal Title

      Key Materials Engineering

      Volume: 470 Pages: 184-187

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Experimental Characterization of Quasi-Fermi Potential Profile in the Channel of a Silicon Nanowire Field-Effect Transistor with Four-Terminal Geometry2011

    • Author(s)
      S.Sato, K.Ohmori, K.Kakushima, P.Ahmet, K.Natori, K.Yamada, H.Iwai
    • Journal Title

      Applied Physics Express

      Volume: 044201

    • NAID

      10028209795

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HfO2/interface-layer gate-stack MOSFETs2011

    • Author(s)
      T.Matsuki, R.Hettiarachchi, W.Feng, K.Shiraishi, K.Yamada, K.Ohmori
    • Journal Title

      Microelectronic Engineering (印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Structural effect of channel cross-section on the gate capacitance of Silicon nanowire field-effect transistors2011

    • Author(s)
      S.Sato, K.Kakushima, P.Ahmet, K.Ohmori, K.Natori, K.Yamada, H.Iwai
    • Journal Title

      ECS Transactions

      Volume: 34 Pages: 87-92

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HtO2/interface-layer gate-stack MOSFETs2011

    • Author(s)
      T.Matsuki, R.Hettiarachchi, W.Feng, K.Shiraishi, K.Yamada, K.Ohmori
    • Journal Title

      Microelectronic Engineering

      Volume: (未定)(印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Influences of carrier transport on drain-current variability of MOSFETs2011

    • Author(s)
      K.Ohmori, K.Shiraishi, K.Yamada
    • Journal Title

      Key Materials Engineering 470

      Pages: 184-187

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration2010

    • Author(s)
      S.Sato, H.Kamimura, H.Arai, K.Kakushima, P.Ahmet, K.Ohmori, K.Yamada, H.Iwai
    • Journal Title

      Solid-State Electronics

      Volume: 54 Pages: 925-928

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks2010

    • Author(s)
      J.Chen, T.Sekiguchi, N.Fukata, M.Takase, Y.Nemoto, R.Hasunuma, K.Yamada, T, Chikyow
    • Journal Title

      ECS Transactions.

      Volume: 28 Pages: 299-304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors2010

    • Author(s)
      S.Sato, K.Kakushima, P.Ahmet, K.Natori, K.Yamada, H.Iwai
    • Journal Title

      Microelectronics Reliability

      Volume: (印刷中,印刷中)

    • NAID

      120007130892

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Journal Article] Control of crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008

    • Author(s)
      K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
    • Journal Title

      ECS Transactions 13(未定(印刷中))

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19026014
  • [Journal Article] An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks

    • Author(s)
      J.Chen, T.Sekiguchi, N.Fukata, M.Takase,Y.Nemoto, R.Hasunuma, K.Yamada, T,Chikyow
    • Journal Title

      ECS Transactions Vol.28

      Pages: 299-304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Patent] Siナノワイヤのシリサイドの形成方法2010

    • Inventor(s)
      山田啓作、大毛利健治, 他
    • Industrial Property Rights Holder
      早稲田大学、東工大
    • Industrial Property Number
      2010-079972
    • Filing Date
      2010-03-31
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] Silicon-on-Insulator Thickness Dependence of Photoluminescence from Electron-Hole Droplet2011

    • Author(s)
      Y.Sakurai, K.Shiraishi, K.Ohmori, K.Yamada, S.Nomura
    • Organizer
      The Third International Symposium on Interdisciplinary Materials Science (ISIMS-2011)
    • Place of Presentation
      つくば
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Influence of Gate-first Process on Low-frequency Noise in EOT-scaling of Poly-Si/TiN/HfO2/SiO2 Gate-stack MOSFETs2011

    • Author(s)
      Takeo Matsuki, Ranga Hettiarachchi, Wei Feng, Kenji Shiraishi, Keisaku Yamada, Kenji Ohmori
    • Organizer
      International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] チャネル断面の角に注目したナノワイヤトランジスタの電気特性評価2011

    • Author(s)
      佐藤創志、角嶋邦之、Parhat Ahmet、大毛利健治、名取研二、山田啓作、岩井洋
    • Organizer
      第16回ゲートスタック研究会
    • Place of Presentation
      東京
    • Year and Date
      2011-01-23
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Influence of Gate-first Process on Low-frequency Noise in EOT-scaling of Poly-Si/TiN/HfO2/SiO2 Gate-stack MOSFETs2011

    • Author(s)
      T.Matsuki, R.Hettiarachchi, W.Feng, K.Shiraishi, K.Yamada, K.Ohmori
    • Organizer
      International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
    • Place of Presentation
      Tokyo
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Effect of Substrate Biasing on Low-Frequency Noise in n-MOSFETs for Different Impurity Concentrations2011

    • Author(s)
      Ranga Hettiarachchi, Takeo Matsuki, Wei Feng, Keisaku Yamada, Kenji Ohmori
    • Organizer
      International Workshop on Dielectric Thin Films for Future ULSI Devices (IWDTF)
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] デバイス評価に向けたSiナノワイヤーの発光測定2011

    • Author(s)
      櫻井蓉子、大毛利健治、山田啓作、角嶋邦之、岩井洋、白石賢二、野村晋太郎
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      厚木
    • Year and Date
      2011-03-24
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] シリコンナノワイヤトランジスタの電気特性の絶縁膜厚依存性2011

    • Author(s)
      佐藤創志、角嶋邦之、Ahmet Parhat、大毛利健治、名取研二、山田啓作、岩井洋
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      厚木
    • Year and Date
      2011-03-23
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Siナノワイヤトランジスタの電気特性の断面形状依存性2010

    • Author(s)
      佐藤創志、新井英明、角嶋邦之、大毛利健治、岩井洋、山田啓作, 他
    • Organizer
      春期第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] Siナノワイヤトランジスタの作製プロセスと電気特性の断面形状依存性2010

    • Author(s)
      佐藤創志、新井英朗、角嶋邦之、大毛利健治、山田啓作、岩井洋, 他
    • Organizer
      ゲートスタック研究会-材料・プロセス・評価の物理-
    • Place of Presentation
      静岡県三島市
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Suicides exist in Nature2010

    • Author(s)
      T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
    • Organizer
      International Electron Device Meeting (IEDM)
    • Place of Presentation
      サンフランシスコ、米国
    • Year and Date
      2010-12-07
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Si Nanowire Device and its Modeling2010

    • Author(s)
      H.Iwai, K.Natori, K.Kakushima, K.Shiraishi, J.Iwata, A.Oshiyama, K.Yamada, K.Ohmori
    • Organizer
      15th International Conference on Simulation of Semicon ductor Processes and Devices
    • Place of Presentation
      ボローニャ、イタリア
    • Year and Date
      2010-09-06
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature2010

    • Author(s)
      T.Nakayama, K.Kakushima, O.Nakatsuka, Y.Machida, S.Sotome, T.Matsuki, K.Ohmori, H.Iwai, S.Zaima, T.Chikyow, K.Shiraishi, K.Yamada
    • Organizer
      IEDM 2010
    • Place of Presentation
      San Francisco USA
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability2010

    • Author(s)
      S.Sato, Y.Lee, K.Kakushima, P.Ahmet, K.Ohmori, K.Natori, K.Yamada, H.Iwai
    • Organizer
      40th European Solid-State Device Research Conference
    • Place of Presentation
      セビリア、スペイン
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] キャリア移動度評価によるシリコンナノワイヤトランジスタの電気特性解析2010

    • Author(s)
      佐藤創志、角嶋邦之、パールハットアヘメト、大毛利健治、名取研二、岩井洋、山田啓作
    • Organizer
      電子情報通信学会SDM研究会6月研究会
    • Place of Presentation
      東京
    • Year and Date
      2010-06-22
    • Data Source
      KAKENHI-PROJECT-19206037
  • [Presentation] Fabrication of Gatearound Si Nanowire Transistors for Characterizing Carrier Transport2009

    • Author(s)
      Kenji Ohmori, S. Sato, H. Kamimura, H. Iwai. K. Yamada, et.al.
    • Organizer
      Mini-colloquium for Nano CMOS and Nanowire 2009
    • Place of Presentation
      Tokyo Institute of Technology
    • Year and Date
      2009-02-21
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] 四端子測定TEGを用いたSiナノワイヤトランジスタのチャネル内電位測定2009

    • Author(s)
      佐藤創志、上村英之、角嶋邦之、大毛利健治、山田啓作、岩井洋、他
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-30
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] Effect of carrier transport on threshold voltage variability in Si MOSFET2009

    • Author(s)
      K.Ohmori, Y.Ohkura, K.Shiraishi, K.Yamada
    • Organizer
      The 14th International Conference of Modulated Semiconductor Structures(MSS-14)
    • Place of Presentation
      Kobe,Japan
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] Fabrication of Si nanowira FETs and their Characteristics2009

    • Author(s)
      K.Kakushima, S.Sato, K.Ohmori, H.Iwai, K.Yamada
    • Organizer
      G-COE PRICE International Symposium on Silicon Nanodevices in 2030 : Prospects by World' s Leading Scientists
    • Place of Presentation
      Tokyo Institute of Technology
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] High-Performance Si Nanowire FET with a Semi Gate-Around Structure Suitable for Integration2009

    • Author(s)
      S.Sato, K.Kaushima, K.Ohmori, K.Yamada, N.Iwai, et al.
    • Organizer
      39th European Solid-State Device Research Conference(ESSDERC)
    • Place of Presentation
      Athens, Greece
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] アモルファス金属材料のLSIへの応用2008

    • Author(s)
      山田啓作、大毛利健治、知京豊裕
    • Organizer
      早稲田大学ナノテクノロジーフォーラム・「金属ガラス」イノベーションフォーラム
    • Place of Presentation
      早稲田大学
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] Si Finのアスペクト比最適化により作製した円形Siナノワイヤの形状に関する研究2008

    • Author(s)
      佐藤創志、大毛利健治、角嶋邦之、山田啓作、岩井洋、他
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-02
    • Data Source
      KAKENHI-PROJECT-20035013
  • [Presentation] Control of crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices2008

    • Author(s)
      (Invited) K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
    • Organizer
      213th Meeting of The Electrochemical Society
    • Place of Presentation
      Phoenix, AZ, USA
    • Year and Date
      2008-05-20
    • Data Source
      KAKENHI-PROJECT-19026014
  • [Presentation] Wide Controllability of Flatband Voltage by Tuning Crystalline Microstructures in Metal Gate Electrodes2007

    • Author(s)
      K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima, T. Adachi, A. Ishikawa, Y. Sugita, Y. Nara, Y. Ohji, K. Shiraishi, K. Yamabe, K. Yamada
    • Organizer
      International Electron Devices Meeting
    • Place of Presentation
      Washington DC, USA
    • Year and Date
      2007-12-11
    • Data Source
      KAKENHI-PROJECT-19026014
  • [Presentation] C添加による金属ゲート材料の結晶構造制御とアモルファス化2007

    • Author(s)
      大毛利健治、細井卓治、渡部平司、山田啓作、知京豊裕
    • Organizer
      秋季 第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PROJECT-19026014
  • [Presentation] Landscape of Combinatorial Materials Exploration and Materials Informatics2007

    • Author(s)
      Chikyow Toyohiro, T. Nagata, N. Umezawa, M. Yoshitake, K. Ohmori, T. Yamada, M. Lippma and H. Koinuma
    • Organizer
      2007 MRS Fall Meeting
    • Place of Presentation
      Boston, MA, USA
    • Year and Date
      2007-11-26
    • Data Source
      KAKENHI-PROJECT-19026014
  • 1.  CHIKYOW Toyohiro (10354333)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 9 results
  • 2.  大毛利 健治 (00421438)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 14 results
  • 3.  ENDOH Tetsuo (00271990)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  SUEMITSU Maki (00134057)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  NAKAYAMA Takashi (70189075)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 6.  SHINADA Takahiro (30329099)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

URL: 

Are you sure that you want to link your ORCID iD to your KAKEN Researcher profile?
* This action can be performed only by the researcher himself/herself who is listed on the KAKEN Researcher’s page. Are you sure that this KAKEN Researcher’s page is your page?

この研究者とORCID iDの連携を行いますか?
※ この処理は、研究者本人だけが実行できます。

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi