IWATA Naotaka 岩田直高

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IWATA NAOTAKA 岩田直高

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Researcher Number	40708939
Other IDs
Affiliation (Current)	2025: 豊田工業大学, 工学(系)研究科(研究院), 特任教授
Affiliation (based on the past Project Information) *help	2015 – 2023: 豊田工業大学, 工学(系)研究科(研究院), 教授
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / Electron device/Electronic equipment Except Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator スーパー接合 / GaN / 環境発電 / 高電子移動度トランジスタ / ゲーテッドアノードダイオード / 整流用ダイオード / 高耐圧 / 低オン電圧 / 環境発電(エナジーハーベスティング) / GaN(窒化ガリウム) … More / レーザー照射 / アクセプタ / パワーデバイス / ArFエキシマレーザー / 活性化 / Siドナー / Mgアクセプタ / 有機金属気層成長法 / 保護膜 / オーミック電極 / 先端機能デバイス / エピタキシャル / デバイス / 格子欠陥 / トランジスタ / ダイオード / センサー / 深紫外 / 結晶欠陥 / 結晶成長 / 窒化物半導体 … More Except Principal Investigator Si基板 / 縦型FET / パワーFET / AlGaN / ビアホール / Si基板上縦型FET / Si基板上エピ反り低減法 / Si基板上FET / ｐ－化 / レーザー / ＭＯＣＶＤ / ＡｌＮバッファ / Ｓｉ基板 / 縦型電子デバイス / 導電性ＡｌＮバッファー層 / 縦型ＦＥＴ / ＡｌＧａＮ / Si基板上縦型デバイス / レーザーによるオーミックコンタクト形成 / 自然形成ビアホール / 縦型AlGaNショットキーデバイス / オーミックコンタクト / レーザによるｐ型化 / 導電性AlNバッファーレイヤー / AlGaN縦型 / 縦型パワーFET Less

Realization of high-efficiency GaN rectifier diode with 0V on-voltage and high breakdown voltage for energy harvestingPrincipal Investigator
- Principal Investigator
  
  岩田直高
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Toyota Technological Institute
Development of laser-irradiated acceptor activation technology of GaN super junction power devices for high-efficiency power systemsPrincipal Investigator
- Principal Investigator
  
  Iwata Naotaka
- Project Period (FY)
  2018 – 2021
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Toyota Technological Institute
Development of vertical AlGaN high power FET on Si substrate using spontaneous via holes
- Principal Investigator
  
  黒瀬範子
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Ritsumeikan University
Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substratePrincipal Investigator
- Principal Investigator
  
  IWATA NAOTAKA
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyota Technological Institute

All 2024 2023 2022 2021 2020 2019 2018 2017 2016

All Journal Article Presentation

[Journal Article] ArF excimer laser activation of Mg-doped GaN small area mesa device2024
- Author(s)
  M.E. Villamin, R.C. Roca, I. Kamiya & N. Iwata
- Journal Title
  
  Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX
  
  Volume: 128860 Pages: 63-63
- DOI
  10.1117/12.3002082
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K20438, KAKENHI-PROJECT-22K04227
[Journal Article] Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors2022
- Author(s)
  Kawata Soichiro、Zhang Yuwei、Iwata Naotaka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SA Pages: SA1004-SA1004
- DOI
  10.35848/1347-4065/ac7630
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04227
[Journal Article] Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications2021
- Author(s)
  Yuwei Zhang, Soichiro Kawata, and Naotaka Iwata
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SA Pages: SA1013-SA1013
- DOI
  10.35848/1347-4065/ac1b74
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K18866
[Journal Article] High-selectivity dry etching for p-type GaN gate formation of normally-off operation high-electron-mobility transistor2020
- Author(s)
  Iwata Naotaka、Kondo Takaaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SA Pages: SAAD01-SAAD01
- DOI
  10.35848/1347-4065/abb759
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K18866
[Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018
- Author(s)
  Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, and Yoshinobu Aoyagi
- Journal Title
  
  AIP Advances
  
  Volume: 8 Issue: 1 Pages: 015329-015329
- DOI
  10.1063/1.5009970
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H03998
[Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018
- Author(s)
  Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, and Yoshinobu Aoyagi
- Journal Title
  
  AIP ADVANCES
  
  Volume: ８
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16H04357
[Journal Article] InGaAs Triangular Barrier Photodiodes for High-Responsivity Detection of Near-Infrared Light2016
- Author(s)
  Kazuya Sugimura, Masato Ohmor, Takeshi Noda, Tomoya Kojima, Sakunari Kado, Pavel Vitushinskiy, Naotaka Iwata, and Hiroyuki Sakaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 6 Pages: 062101-062101
- DOI
  10.7567/apex.9.062101
- NAID
  210000137928
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03998, KAKENHI-PROJECT-26289095
[Presentation] ArF excimer laser activation of Mg-doped GaN small area mesa device2024
- Author(s)
  Maria Emma Castil Villamin and Naotaka Iwata
- Organizer
  SPIE Photonics West 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] Annealing in oxygen ambient of In-based contact for Mg-doped p-GaN2024
- Author(s)
  Maria Emma Castil Villamin and Naotaka Iwata
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] エネルギーハーベスティングからワイヤレス電力伝送に適用できるGaNヘテロ構造整流ダイオードの研究開発（ポスター発表）2023
- Author(s)
  岩田直高
- Organizer
  早稲田大学アンビエントロニクス研究所 × ワイヤレス電力伝送実用化コンソーシアム × エネルギーハーベスティングコンソーシアムジョイントシンポジウム
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] Formation of In/Au low-temperature contact for vertical superjunction GaN devices with laser-activated p-GaN region2023
- Author(s)
  Maria Emma Castil Villamin and Naotaka Iwata
- Organizer
  International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] GaN heterojunction rectifier diode with low turn-on voltage and high breakdown voltage for energy harvesting2023
- Author(s)
  Naotaka Iwata, Kouki Hino, and Maria Emma Castil Villamin
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] Annealing temperature dependence of In/Au electrode performance on p-GaN2023
- Author(s)
  Maria Emma Castil Villamin and Naotaka Iwata
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] N2/O2雰囲気アニールによるAu/Ni/p-GaNオーム性接触の低抵抗化2023
- Author(s)
  岩田直高, 三明純奈, Maria Emma Castil Villamin
- Organizer
  電子情報通信学会ソサイエティ大会
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] エネルギーハーベスティングからワイヤレス電力伝送に適用できるGaNヘテロ構造整流ダイオードの研究開発2023
- Author(s)
  岩田直高
- Organizer
  早稲田大学アンビエントロニクス研究所 × ワイヤレス電力伝送実用化コンソーシアム × エネルギーハーベスティングコンソーシアムジョイントシンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] 低オン電圧高電流特性を示す環境発電用GaNヘテロ接合整流ダイオード2023
- Author(s)
  日野晃貴、マリアエマヴィリアミン、岩田直高
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04227
[Presentation] Conduction change of Mg and Si co-doped GaN layer by ArF laser irradiation2022
- Author(s)
  Ryuji Kamiya, Yukari Yonetani, Yuwei Zhang, Itaru Kamiya, Noriko Kurose, Yoshinobu Aoyagi, and Naotaka Iwata
- Organizer
  the 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] High breakdown voltage of p-GaN/AlGaN/GaN diode with controlled Mg acceptor charge2022
- Author(s)
  Soichiro Kawata, Satoshi Fukutani, Yuwei Zhang, and Naotaka Iwata
- Organizer
  the 14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] Two-step mesa p-GaN gated anode diode for low-power rectification applications2021
- Author(s)
  Yuwei Zhang and Naotaka Iwata
- Organizer
  2021 International Conference on Solid State Devices and Materials(SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] MgドープGaN層の厚さを変えて電荷濃度を制御したp型GaN/AlGaN/GaNダイオードの耐圧特性2021
- Author(s)
  川田宗一郎, ジャンユーウェイ, 岩田直高
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] Controlled activation of Mg dopant by laser irradiation for p-GaN formation2021
- Author(s)
  Ryuji Kamiya, Takahito Ichinose, Yuwei Zhang, Noriko Kurose, Itaru Kamiya, Yoshinobu Aoyagi, and Naotaka Iwata
- Organizer
  The 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] P-GaN gated AlGaN/GaN diode for rectification applications2021
- Author(s)
  Soichiro Kawata, Hinano Kondo, Yuwei Zhang, and Naotaka Iwata
- Organizer
  The 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications2021
- Author(s)
  Yuwei Zhang, Soichiro Kawata, and Naotaka Iwata
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] P-GaN gate AlGaN/GaN high electron mobility transistor with nearly-zero threshold voltage for power rectification applications2021
- Author(s)
  Yuwei Zhang and Naotaka Iwata
- Organizer
  The 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] Laser-induced local activation of Mg-doped GaN and AlGaN for high power vertical devices2019
- Author(s)
  Noriko Kurose, Naotaka Iwata, and Itaru Kamiya
- Organizer
  SPIE Photonics West 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] p型GaN上に形成したAu/Ni電極の熱処理による低接触抵抗化2019
- Author(s)
  畔柳壮、近藤孝明、安野聡、小金澤智之、岩田直高
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] Formation of ohmic contact to p-type GaN by heat treatment of Au/Ni electrode2019
- Author(s)
  So Kuroyanagi, Satoshi Yasuno, Takaaki Kondo, Tomoyuki Koganezawa, Naotaka Iwata
- Organizer
  12th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] Laser-induced local activation of Mg-doped GaN and AlGaN for high power vertical devices2019
- Author(s)
  Noriko Kurose, Naotaka Iwata, and Itaru Kamiya
- Organizer
  SPIE Photonics West 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] 様々なp型GaNゲート構造をドライエッチングで形成したAlGaN/GaNGaNGaN高電子移動度トランジスタの特性2019
- Author(s)
  近藤孝明、赤澤良彦、岩田直高
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Effects of p-GaN gate structures and their fabrication process on performances of normally-off AlGaN/GaN HEMTs2019
- Author(s)
  Takaaki Kondo, Yoshihiko Akazawa, and Naotaka Iwata
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Characterization of Au/Ni ohmic contact on p-GaN using hard X-ray photoelectron spectroscopy and 2D-X-ray diffraction2019
- Author(s)
  Satoshi Yasuno, Tomoyuki Koganezawa, So Kuroyanagi, Naotaka Iwata
- Organizer
  Materials Research Meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] Au/Ni/p-GaNオーミックコンタクトの熱処理温度依存性とバンドアライメント評価2019
- Author(s)
  安野聡、畔柳壮、小金澤智之、岩田直高
- Organizer
  応用物理学会　先進パワー半導体分科会　第6回講演会
- Data Source
  KAKENHI-PROJECT-18K18866
[Presentation] p型GaNゲートを用いたノーマリオフ動作AlGaN/GaN高電子移動度トランジスタ2018
- Author(s)
  赤澤良彦、近藤孝明、吉川慎也、岩田直高、榊裕之
- Organizer
  第65回春季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Effect of inductively coupled plasma reactive ion etching on performances of p-GaN gate AlGaN/GaN HEMTs2018
- Author(s)
  Yoshihiko Akazawa, Takaaki Kondo, and Naotaka Iwata
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] 選択ドライエッチングがp型GaNゲートAlGaN/GaNGaNGaN高電子移動度トランジスタの特性へ及ぼす影響2018
- Author(s)
  近藤孝明、赤澤良彦、岩田直高
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] レーザを用いた局所p-GaNオーミック電極形成法の開発2018
- Author(s)
  川﨑輝尚、黒瀬範子、松本晃太、岩田直高、青柳克信
- Organizer
  応用物理学会秋季学術講演会2018 シンポジウム
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] 放射光XRD・HAXPESによるAl/Ti/AlGaNの界面反応層の結晶構造及び化学結合状態評価2017
- Author(s)
  安野聡、小金澤智之、鈴木貴之、岩田直高
- Organizer
  第78回秋季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017
- Author(s)
  松本滉太，黒瀬範子，岩田直高，山田郁彦，神谷格，青柳克信
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] MgドープGaNのレーザー誘起による活性化とその局所制御2017
- Author(s)
  松本滉大、黒瀬範子、下野貴史、岩田直高、山田郁彦、神谷格、青柳克信
- Organizer
  第78回秋季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] MgドープGaNへのレーザー照射による局所活性化と結晶性のその場観測2017
- Author(s)
  松本滉太、黒瀬範子、山田郁彦、神谷格、青柳克信、岩田直高
- Organizer
  IEEE Metro Area Workshop in Nagoya
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] HCl表面処理とプラズマ励起原子層堆積 SiNx膜による AlGaN/GaN HEMTの表面安定化2017
- Author(s)
  鈴木貴之、土屋晃祐、大保崇博、赤澤良彦、下野貴史、松本滉太、江口卓也、岩田直高
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜 (神奈川県横浜市)
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] SiNx Passivated GaN HEMT by Plasma Enhanced Atomic Layer Deposition2016
- Author(s)
  Takayuki Suzuk, Tomiaki Yamada, Ryosuke Kawai, Shohei Kawaguchi, Dongyan Zhang, and Naotaka Iwata
- Organizer
  The 43rd International Symposium on Compound Semiconductors (ISCS)
- Place of Presentation
  Toyama International Conference Center (富山県富山市)
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET2016
- Author(s)
  Noriko Kurose, Kota Ozeki, Tsutomu Araki, Naotaka Iwata, Itaru Kamiya, and Yoshinobu Aoyagi
- Organizer
  the 43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama International Conference Center(Toyama, Toyama),Japan
- Year and Date
  2016-06-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04357
[Presentation] プラズマ励起原子層堆積プラズマ励起原子層堆積保護膜によるAlGaN/GaN HEMTの表面安定化2016
- Author(s)
  鈴木貴之、山田富明、河合亮輔、川口翔平、張東岩、岩田直高
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ (新潟県新潟市)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03998
[Presentation] Realization of Conductive AlN Epitaxial Layer on Si Substrate using Spontaneously Formed Nano-Size Via-Holes for Vertical AlGaN High Power FET2016
- Author(s)
  Noriko Kurose, Kota Ozeki, Tsutomu Araki, Naotaka Iwata, Itaru Kamiya, and Yoshinobu Aoyagi
- Organizer
  The 43rd International Symposium on Compound Semiconductors (ISCS)
- Place of Presentation
  Toyama International Conference Center (富山県富山市)
- Year and Date
  2016-06-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03998

1. 神谷格 (10374018)

# of Collaborated Projects: 3 results

# of Collaborated Products: 13 results
2. 荒木努 (20312126)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
3. 黒瀬範子 (50520540)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
4. 青柳克信 (70087469)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
5. VILLAMIN MARIAEMMA

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

IWATA Naotaka 岩田 直高

IWATA NAOTAKA 岩田 直高

Research Projects

Research Products

Co-Researchers

Realization of high-efficiency GaN rectifier diode with 0V on-voltage and high breakdown voltage for energy harvestingPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of laser-irradiated acceptor activation technology of GaN super junction power devices for high-efficiency power systemsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of vertical AlGaN high power FET on Si substrate using spontaneous via holes

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of the monolithic AlGaN deep ultraviolet sensing system on a Si substratePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] ArF excimer laser activation of Mg-doped GaN small area mesa device2024

Author(s)

Journal Title

DOI

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[Journal Article] Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors2022

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DOI

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[Journal Article] Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications2021

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DOI

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[Journal Article] High-selectivity dry etching for p-type GaN gate formation of normally-off operation high-electron-mobility transistor2020

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[Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018

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[Journal Article] Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices2018

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[Journal Article] InGaAs Triangular Barrier Photodiodes for High-Responsivity Detection of Near-Infrared Light2016

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NAID

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[Presentation] ArF excimer laser activation of Mg-doped GaN small area mesa device2024

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[Presentation] Annealing in oxygen ambient of In-based contact for Mg-doped p-GaN2024

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[Presentation] エネルギーハーベスティングからワイヤレス電力伝送に適用できるGaNヘテロ構造整流ダイオードの研究開発（ポスター発表）2023

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[Presentation] Formation of In/Au low-temperature contact for vertical superjunction GaN devices with laser-activated p-GaN region2023

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IWATA Naotaka 岩田直高

IWATA NAOTAKA 岩田直高