NATORI Akiko 名取晃子

… Alternative Names

名取晃子ナトリアキコ

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Researcher Number	50143368
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2004 – 2009: 電気通信大学, 電気通信学部, 教授 2001 – 2002: 電気通信大学, 電気通信学部, 教授 1996 – 1998: 電気通信大学, 電気通信学部, 教授 1994 – 1995: 電気通信大学, 電気通信学部, 助教授 1988 – 1991: 電気通信大学, 電気通信学部, 助教授 1987: 電気通信大学, 電気通信学部・電子工学科, 講師 1987: 電通大, 電気通信学部, 講師
Review Section/Research Field	Principal Investigator 固体物性Ⅰ(光物性・半導体・誘電体) / Science and Engineering / Condensed matter physics I / Applied materials
Keywords	Principal Investigator 量子ドット / Si / SiO_2 / 局所誘電特性 / 磁場効果 / 多電子基底状態 / 非制限ハートレーフォック法 / 多電子相関効果 / ステップバンチング / magnetic field … More / spin correlation / Hubbard model / quantum Monte Carlo method / electron correlation / spin coupling / double quantum dots / 磁場 / スピン相関 / ハバードモデル / 量子モンテカルロ法 / 電子相関 / スピン結合 / 2重量子ドット / silicon dioxide / hole penetration depth / tunneling barrier / valence band offset / Si酸化膜 / ホール浸入長 / トンネル障壁 / 価電子帯バンドオフセット / Monte Carlo simulation / Tersoff-Dodson potential / surface melting / Si (111) / テルソフ型ポテンシャル / スティリンジャ・ウェーバーポテンシャル / 短距離秩序構造 / モンテカルロシミュレーション / Tersoff-Dodsonポテンシャル / 表面融解 / Si(111) / 計算機シミュレーション / 成長モード / アニーリング / 薄膜成長 / GeO2 / high-k膜 / 計算物理学 / 欠陥 / 表面・界面 / 界面欠陥 / .表面・界面物性 / 半導体超微細化 / 計算物性 / スティックスリップ運動 / 高次スリップ運動 / Tomlinsonモデル / ナノコンタクト / 摩擦力顕微鏡 / 摩擦 / 超潤滑 / ナノトライボロジー / トンネル速度 / 多電子束縛状態 / 磁気スイッチ / ハートレーフォック法 / 磁場誘起転移 / 微分容量 / D^-イオン / ガウス型軌道 / ステップ / 7×7構造相転移 / TSKモデル / Si(111)微斜面 / ドメイン転換 / ステップ問相互作用 / Si(100) / ステップ構造 / エレクトロマイグレ-ション … More Except Principal Investigator 表面拡散 / シリコン表面 / エレクトロマイグレ-ション / 走査オージェ電子分光 / 超薄膜 / 質量輸送 / エレクトロマイグレーション / 界面 / 薄膜成長モード / 物質輸送 / 表面 / 表面エレクトロマイグレーション / 計算機シミュレ-ション / シリコン表面ステップ / ひ化ガリウム表面 / ゲルマニウム表面 / 表面質量輸送 / 電位顕微鏡 / ステップ / Si(111)7×7 Less

ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Electro-Communications
ナノスケールSiO2/Si界面の電子状態と局所誘電特性に及ぼす欠陥の影響Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Electro-Communications
Mechanism of friction and superlubricity in nanometer-scale contactsPrincipal Investigator
- Principal Investigator
  
  NATORI Akiko
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics I
- Research Institution
  The University of Electro-Communications
External field control of a few-particle-bound states in double quantum dotsPrincipal Investigator
- Principal Investigator
  
  NATORI Akiko
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Condensed matter physics I
- Research Institution
  The University of Electro-Communications
Atomistic tunnelig barrier of heteroepitaxial SiO_2/Si(001)Principal Investigator
- Principal Investigator
  
  NATORI Akiko
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  The University of Electro-Communications
半導体ヘテロ界面の異方的量子ドットの多電子束縛状態とトンネル速度と磁場効果Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications
半導体ヘテロ界面の異方的量子ドットの多電子束縛状態とトンネル速度と磁場効果Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications
半導体ヘテロ界面の異方的量子ドットの多電子束縛状態とトンネル速度と磁場効果Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  1996 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  The University of Electro-Communications
異方的量子ドットを介したトンネル電流の多電子相関効果Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications
異方的量子ドットを介したトンネル電流の多電子相関効果Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications
Atomic structures on 1*1 Si (111) surface at high temperaturPrincipal Investigator
- Principal Investigator
  
  NATORI Akiko
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  固体物性Ⅰ(光物性・半導体・誘電体)
- Research Institution
  The University of Electro-Communications
Si(100)、(111)面ステップダイナミクスの通電効果Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications
Si(111)微斜面ステップ構造相転移の研究Principal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  The University of Electro-Communications
エレクトロマイグレ-ションによる半導体界面の形成
- Principal Investigator
  
  安永均
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications
半導体の清浄表面と初期界面の電気的特性
- Principal Investigator
  
  安永均
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications
表面エレクトロマイグレーションによって形成される半導体表面層の研究
- Principal Investigator
  
  安永均
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications
超薄膜の微視的構造と安定性に関する計算機シミュレーションPrincipal Investigator
- Principal Investigator
  
  名取晃子
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Institution
  The University of Electro-Communications
表面エレクトロマイグレーションによる表面新物質相の製作
- Principal Investigator
  
  安永均
- Project Period (FY)
  1987
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Electro-Communications

All 2009 2008 2007 2006

All Journal Article Presentation

[Journal Article] Ballistic thermal conductance of electrons in graphene ribbons2009
- Author(s)
  E.Watanabe, S.Yamaguchi, J.Nakamura, A.Natori
- Journal Title
  
  Phys.Rev.B 80
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] Band bending effects on scanning tunneling microscope images of subsurface dopants2009
- Author(s)
  M.Hirayama, J.Nakamura, A.Natori
- Journal Title
  
  J.Appl.Phys. 105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] In-plane strain effect on dielectric properties of the HfO2 thin films2009
- Author(s)
  S.Wakui, J.Nakamura, A.Natori
- Journal Title
  
  J.Vac Sci.Technol.B 27
  
  Pages: 2020-2023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)2009
- Author(s)
  M.Hirayama, J.Nakamura, A.Natori
- Journal Title
  
  J.Vac.Sci.Technol.B 27
  
  Pages: 2062-2065
- NAID
  10025620814
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] Size effects in friction of multiatomic sliding contacts2008
- Author(s)
  M. Igarashi, J. Nakamura, A. Natori
- Journal Title
  
  Phys. Rev. B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18540313
[Journal Article] Atomic scale dielectric constant near the SiO2/Si(001)interface2008
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Journal Title
  
  J. Vac. Sci. Technol. B 26
  
  Pages: 1579-1584
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20035005
[Journal Article] Size effects in friction of multiatomic sliding contacts2008
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Journal Title
  
  Phys. Rev. B 78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18540313
[Journal Article] Dielectric properties of the interface between Si and SiO22007
- Author(s)
  S.Wakui, J.Nakamura, A.Natori
- Journal Title
  
  Jpn.J.Appl.Phys. 46
  
  Pages: 3261-3264
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026004
[Journal Article] Mechanism of velocity saturation of atomic friction force and dynamic superlubricity at torsional resonance2007
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Journal Title
  
  Jpn. J. Appl. Phys.
- Data Source
  KAKENHI-PROJECT-18540313
[Journal Article] Nano-scale profile of the dielectric constant near the Si/oxide interface:A first-principles approach2007
- Author(s)
  J.Nakamura, S.Wakui, S.Eguchi, R.Yanai, A.Natori
- Journal Title
  
  ECS Trans. 11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19026004
[Journal Article] Mechanism of velocity saturation of atomic friction2007
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Journal Title
  
  Jpn. J. Appl. Phys 46
  
  Pages: 5591-5594
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] Ge酸化物超薄膜の誘電特性2009
- Author(s)
  田村雅大、涌井貞一、中村淳、名取晃子
- Organizer
  第29回表面科学学術講演会
- Place of Presentation
  タワーホール船堀
- Year and Date
  2009-10-27
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] In-plane strain effects on dielectric properties of the HfO2 thin film2009
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Organizer
  36th Conference on the Physics and Chemistry of Surfaces and Interfaces(PCSI-36)
- Place of Presentation
  Santa Barbara, CA, 米国
- Year and Date
  2009-01-12
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Dielectric constant profiles of the thin-films : Alpha- and Beta-quartz phase of(Si or Ge)dioxide2009
- Author(s)
  中村淳, 涌井貞一, 田村雅大, 名取晃子
- Organizer
  12^<th> Conf.on the Formation of Semiconductor Interfaces
- Place of Presentation
  Weimer、ドイツ
- Year and Date
  2009-07-07
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] HfO2超薄膜の誘電特性:結晶構造依存性2009
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] 歪みHfO2薄膜の誘電特性2009
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] 第一原理計算によるSi(001)/La2O3(01-10)界面のバンドオフセット2009
- Author(s)
  谷内亮介、中村淳、名取晃子
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] HfO2超薄膜の局所誘電率プロファイル2008
- Author(s)
  涌井貞一, 中村淳, 名取晃子
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Anomalous enhancement of the local dielectric constant near defects in SiO22008
- Author(s)
  S. Wakui, J. Nakamura, A. Natori
- Organizer
  14th International Conference on Solid Films and Surface(ICSFS-14)
- Place of Presentation
  ダブリン,アイルランド
- Year and Date
  2008-07-01
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Polytype dependence on permittivity of SiC2008
- Author(s)
  J. Nakamura, Y. Iwasaki, S. Wakui, A. Natori
- Organizer
  ICSFS-14
- Place of Presentation
  ダブリン,アイルランド
- Year and Date
  2008-07-03
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] HfO2超薄膜の誘電特性2008
- Author(s)
  涌井貞一, 中村淳, 名取晃子
- Organizer
  第28回表面科学学術講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2008-11-15
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] ナノスケールの摩擦機構:ティップサイズ効果2008
- Author(s)
  五十嵐正典、中村淳、名取晃子
- Organizer
  日本物理学会第63回年次大会
- Place of Presentation
  近畿大学
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] Atomic-scale friction of nanometer-sized cantacts2008
- Author(s)
  M. Igarashi, J. Nakamura, A. Natori
- Organizer
  14^<th> Int. Conf. on Solid Films and Surfaces
- Place of Presentation
  Dublin
- Year and Date
  2008-06-30
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] First- principles evaluation of the polytype-dependence of the local dielectric constant for SiC2008
- Author(s)
  K. Sato, Y. Iwasaki, S. Wakui, J. Nakamura, A. Natori
- Organizer
  ISSS-5
- Place of Presentation
  早稲田大学
- Year and Date
  2008-11-12
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] ナノスケールの摩擦機構 : ティップサイズ効果2008
- Author(s)
  五十嵐正典、中村淳、名取晃子
- Organizer
  日本物理学会2008年春季大会
- Place of Presentation
  近畿大学
- Year and Date
  2008-03-25
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] SiO2薄膜中の欠陥近傍における局所誘電率の異常増大2008
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日大船橋
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] Atomic scale friction of nanometer-sized contacts2008
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Organizer
  14^<th> Int. Conf. on Solid Films and Surfaces
- Place of Presentation
  Dublin
- Year and Date
  2008-06-30
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] SiC結晶多形の誘電率 ; 第一原理計算による積層構造依存性評価2008
- Author(s)
  佐藤耕平, 岩崎雄一, 中村淳, 名取晃子
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大
- Year and Date
  2008-11-15
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Dielectric properties of the ultra-thin La2O3(0001) film2008
- Author(s)
  Y. Ryosuke, J. Nakamura, A. Natori
- Organizer
  5th International Symposium on Surface Science and Nanotechnology(ISSS-5)
- Place of Presentation
  早稲田大学
- Year and Date
  2008-11-11
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] La2O3(0001)超薄膜の誘電特性2008
- Author(s)
  谷内良亮, 中村淳, 名取晃子
- Organizer
  第28回表面科学学術講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2008-11-15
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] SiO2/Si(001)界面におけるナノスケール誘電特性の第一原理計算2008
- Author(s)
  涌井貞一、中村淳、名取晃子
- Organizer
  物理学会第63回年次大会
- Place of Presentation
  近畿大学
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] La2O3(0001)超薄膜の誘電特性2008
- Author(s)
  谷内良亮, 中村淳, 名取晃子
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-20035005
[Presentation] Dielectric properties of the interface between Si and SiO22008
- Author(s)
  S.Wakui, J.Nakamura, A.Natori
- Organizer
  35th Conf. on the Physics and Semiconductor Interface
- Place of Presentation
  Santa Fe
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] Nano-scale profile of the dielectric constant near the Si/oxide interface:A first-principles approach2007
- Author(s)
  J.Nakamura, S.Wakui, S.Eguchi, R.Yanai, A.Natori
- Organizer
  212th ECS
- Place of Presentation
  Washington DC
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] Mechanism of velocity saturation and lateral resonance in atomic-scale friction2007
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Organizer
  IVC-17/ICSS-13 and ICN+T
- Place of Presentation
  Stockholm
- Year and Date
  2007-07-04
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] Dielectric properties of the interface between Si and SiO22007
- Author(s)
  S.Wakui, J.Nakamura, A.Natori
- Organizer
  5th Int.Sympo.on Control ofSemiconductor Inter faces
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-19026004
[Presentation] 原子スケール摩擦力の速度飽和機構2006
- Author(s)
  五十嵐正典、中村淳、名取晃子
- Organizer
  日本物理学会2006年秋季大会
- Place of Presentation
  千葉大学
- Year and Date
  2006-09-23
- Data Source
  KAKENHI-PROJECT-18540313
[Presentation] Mechanism of velocity saturation of atomic friction and the dynamical superlubricity at torsional resonance2006
- Author(s)
  M.Igarashi, J.Nakamura, A.Natori
- Organizer
  14^<th> Int. Colloqui. on Scanning Probe Microscopy
- Place of Presentation
  Atagawa
- Year and Date
  2006-12-07
- Data Source
  KAKENHI-PROJECT-18540313

1. JUN Nakamura (50277836)

# of Collaborated Projects: 4 results

# of Collaborated Products: 38 results
2. 安永均 (40017330)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
3. 奥山直樹 (50017406)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results

NATORI Akiko 名取 晃子

名取 晃子 ナトリ アキコ

Research Projects

Research Products

Co-Researchers

ナノスケールSiO2/Si界面の局所誘電特性に及ぼす欠陥の影響Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

ナノスケールSiO2/Si界面の電子状態と局所誘電特性に及ぼす欠陥の影響Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Mechanism of friction and superlubricity in nanometer-scale contactsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

External field control of a few-particle-bound states in double quantum dotsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Atomistic tunnelig barrier of heteroepitaxial SiO_2/Si(001)Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

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半導体ヘテロ界面の異方的量子ドットの多電子束縛状態とトンネル速度と磁場効果Principal Investigator

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半導体ヘテロ界面の異方的量子ドットの多電子束縛状態とトンネル速度と磁場効果Principal Investigator

Principal Investigator

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半導体ヘテロ界面の異方的量子ドットの多電子束縛状態とトンネル速度と磁場効果Principal Investigator

Principal Investigator

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異方的量子ドットを介したトンネル電流の多電子相関効果Principal Investigator

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異方的量子ドットを介したトンネル電流の多電子相関効果Principal Investigator

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Atomic structures on 1*1 Si (111) surface at high temperaturPrincipal Investigator

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Si(100)、(111)面ステップ ダイナミクスの通電効果Principal Investigator

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Si(111)微斜面ステップ構造相転移の研究Principal Investigator

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エレクトロマイグレ-ションによる半導体界面の形成

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NATORI Akiko 名取晃子

名取晃子ナトリアキコ

Si(100)、(111)面ステップダイナミクスの通電効果Principal Investigator