Yaguchi Hiroyuki 矢口裕之

… Alternative Names

矢口裕之ヤグチヒロユキ

YAGUCHI Hiroyuki 矢口裕之

YAMAGUCHI Hiroyuki 矢口裕之

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Researcher Number	50239737
Other IDs	https://orcid.org/0000-0003-0621-3501
Affiliation (Current)	2025: 埼玉大学, 理工学研究科, 教授
Affiliation (based on the past Project Information) *help	2024: 埼玉大学, 理工学研究科, 教授 2018 – 2021: 埼玉大学, 理工学研究科, 教授 2009 – 2016: Saitama University, 理工学研究科, 教授 2009 – 2012: 埼玉大学, 大学院・理工学研究科, 教授 2007: 埼玉大学, 大学院・理工学研究科, 准教授 … More 2006: Saitama University, Graduate School of Science and Engineering, Associate Professor, 大学院理工学研究科, 助教授 2005: 埼玉大学, 工学部, 助教授 2001 – 2002: 埼玉大学, 工学部, 助教授 1998 – 1999: Saitama Univ., Faculty of Engineering, Associate Professor, 工学部, 助教授 1995 – 1997: 東京大学, 大学院・工学系研究科, 助手 1996: 東京大学, 工学系研究科, 助手 1994: 東京大学, 工学部, 助手 1992: 東京大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Basic Section 21050:Electric and electronic materials-related / Basic Section 30010:Crystal engineering-related Except Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Crystal engineering / Basic Section 30010:Crystal engineering-related / Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering / Applied optics/Quantum optical engineering
Keywords	Principal Investigator 単一光子 / 光物性 / 太陽電池 / 等電子トラップ / エピタキシャル成長 / MBE、エピタキシャル / 応用光学・量子光工学 / 結晶工学 / エピタキシャル / 半導体物性 … More / フォトルミネッセンス / フォトリフレクタンス / 化合物半導体 / 非発光再結合中心 / 非発光再結合 / 二波長励起フォトルミネッセンス / アップコンバージョン発光 / 電子局在状態 / 第一原理計算 / 希釈窒化物半導体 / isoelectronic trap / single photon / optical properties / advanced functional device / light source technology / crystal engineering / epitaxial / 先端機能デバイス / 光源技術 / 原子層ドーピング / 励起子分子 / 応用光学・量子光光学 / 量子もつれ光子対 / 量子光学 / 半導体 / MBE,エピタキシャル / 応用光学・量子光工学MBE / ヘテロ構造 / 短周期超格子 / 分子線セル / ゲルマニウム / シリコン / 光第2高調波発生 / 固体ソース / 分子線エピタキシ- / 有機金属気相エピタキシ- / 偏光 / 歪 / 半導体レーザ / 半導体量子細線 / バンドラインアップ / ガリウム砒素リン / 半導体超格子 / トランスジェニック植物 / 耐冷性 / 脂肪酸組成 / 葯 / 遺伝子導入 / ガリウム砒素燐 / シリコン・ゲルマニウム / 間接遷移型半導体 / ヘテロ界面平坦性 / バンド不連続量 … More Except Principal Investigator 窒化物半導体 / 転位 / MOVPE / 結晶成長 / エピタキシャル成長 / AlGaP / SiGe / 分光偏光解析 / フォトルミネッセンス / 電子顕微鏡 / 格子欠陥 / 劣化 / 発光デバイス / 半導体物性 / 結晶工学 / 量子ドット / 差周波発生 / 光第2高調波発生 / 波長変換 / 非線形光学 / 高効率化 / 動作時の欠陥検出 / 紫外LED / 緑色LED / 青色LED / 禁制帯内励起光 / 非発光再結合 / 欠陥準位 / 青～緑色LED / UV-LED / infrared reflectance spectroscopy / ultraviolet photoemission spectroscopy / x-ray photoemission spectroscopy / spectropic ellipsometry / interface / oxide films / SiC / IV semiconductors / 分光エリプソメトリ / 赤外反射分光 / 紫外光電子分光 / X線光電子分光 / 界面 / 酸化膜 / 炭化珪素(SiC) / IV族半導体 / resistance against oxidation / magnesia / epitaxial growth / pulsed laser ablation / ferroelectric oxides / nitride semiconductors / ferroelectric waveguides / blue laser diodes / チタン酸ジルコン酸鉛 / バッファ層 / 耐酸化性 / 酸化マグネシウム / レーザアブレーション / 酸化物強誘電体 / 窒化物系半導体 / 強誘電体光導波路 / 青色半導体レーザ / no phonon transition / neighboring confinement structure / indireck semiconductors / アルミニウムガリウム燐 / シリコンゲルマニウム / 無フォノン発光 / 隣接閉じ込め構造 / 間接遷移型半導体 / Antiphase Domain / Quasi Phase Matching / Sublattice Reversal / Domain Inversion / Compound Semiconductor / Second-Harmonic Generation / Frequency Conversion / Nonlinear Optics / 差調波発生 / アンチフェイズドメイン / 疑似位相整合 / 副格子交換 / 分極反転 / 化合物半導体 / METALORGANIC VAPOR PHASE EPITAXY / GALLIUM NITRADE / GALLIUM PHOSPHIDE / METASTABLE ALLOY SEMICONDUCTOR / WIDEGAP COMPOUND SEMICONDUCTOR / GaPN ALLOY / NITRIDE ALLOY SEMICONDUCTOR / MOVPE法 / 有機金属気相成長法 / 窒化ガリウム / ガリウムリン / 準安定混晶半導体 / ワイドギャップ化合物半導体 / GaPN混晶 / 窒化物混晶半導体 / 点欠陥 / 光照射 / 欠陥 / 希釈窒化物半導体 / フォノン局在制御 / 時間分解計測 / 時間分解PL / 太陽電池 / 量子井戸 / フォノン / キャリアダイナミクス / フォノンダイナミクス / 光物性 / 結晶欠陥 / 励起子 / フォノンエンジニアリング / 炭化ケイ素半導体 / SiおよびC原子放出現象 / 酸化界面 / 積層欠陥 / 熱酸化 / 炭化ケイ素(SiC)半導体 / 長寿命化 / 信頼性 / III族窒化物半導体 / 立方晶III族窒化物 / MBE / III-N半導体 / 立方晶III-N半導体 / 立方晶窒化物半導体 / 窒化インジウム / 希薄窒化物 / 自己形成量子ドット / ジメチルヒドラジン / InGaAsN / 量子ナノ構造 / III-V-N混晶 / 希薄窒化物半導体 / 励起子共鳴 / 非対称構造 / 半導体量子井戸 / GaPN / GaAsN / エピタキシー機構 / 構造変換 / ヘテロエピタキシー / 立方晶GaN / GaN / ナイトライド Less

Improvement of the efficiency of photovoltaic cells using two-step optical absorption through band tail statesPrincipal Investigator
- Principal Investigator
  
  矢口裕之
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Saitama University
Development of High Efficiency Photovoltaic Cells Using Electron Localized States in Dilute Nitride SemiconductorsPrincipal Investigator
- Principal Investigator
  
  Yaguchi Hiroyuki
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Saitama University
Characterization of defect levels in UV-LEDs by below-gap excitation light under operating condition
- Principal Investigator
  
  Kamata Norihiko
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Saitama University
Study on the Behavior of Defects in Dilute Nitride Semiconductors and Improvement of Device Reliability
- Principal Investigator
  
  Ueda Osamu
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Kanazawa Institute of Technology
Advanced research on semiconductor optical device materials by controlling phonon transport under non-thermal equilibrium state
- Principal Investigator
  
  Ishitani Yoshihiro
- Project Period (FY)
  2013 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Chiba University
Generation and control of quantum correlated photons from atomic-layer doped semiconductorsPrincipal Investigator
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Elucidation of formation mechanism of oxidation-induced fault in silicon carbide semiconductors
- Principal Investigator
  
  HIJIKATA Yasuto
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saitama University
Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Study of Optical Irradiation on Nobel Materials and Quantum DotStructures for Next Generation Optical Devices
- Principal Investigator
  
  UEDA Osamu
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kanazawa Institute of Technology
有機N原料によるInNおよび関連混晶薄膜のMOVPE成長
- Principal Investigator
  
  尾鍋研太郎
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Single Photon Generation from locally doped semiconductorsPrincipal Investigator
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structures
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Study on single photon emission utilizing isoelectronic trapsPrincipal Investigator
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Characterization of the Interfaces between IV-IV Semiconductors and Ultra-Thin Oxide films
- Principal Investigator
  
  YOSHIDA Sadafumi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saitama University
Fabrication of novel monolithic optical devices composed of blue laser diodes and ferroelectric optical waveguides
- Principal Investigator
  
  MASUDA Atsushi
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Japan Advanced Institute of Science and Technology
シリコン・ゲルマニウム規則混晶からの光第二高調波発生に関する研究Principal Investigator
- Principal Investigator
  
  矢口裕之
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
非対称構造半導体量子井戸の2次非線形光学特性の研究
- Principal Investigator
  
  近藤高志
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  The University of Tokyo
Domain-Inversion Epitaxy and Its Application to Wavelength Conversion Devices
- Principal Investigator
  
  ITO Ryoichi
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Research on Optical Transitions of Indirect Semiconductors with Novel Superstructures
- Principal Investigator
  
  SHIRAKI Yasuhiro
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
歪導入による半導体量子ナノ構造の偏光特性の制御Principal Investigator
- Principal Investigator
  
  矢口裕之
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
ガリウム砒素リン系半導体超格子構造による高効率発光素子材料の実現Principal Investigator
- Principal Investigator
  
  矢口裕之
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
STUDY ON GROWTH AND MATERIAL PROPERTIES OF METASTABLE NITRIDE ALLOY SEMICONDUCTORS
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  THE UNIVERSITY OF TOKYO
フォトリフレタンス分光法による間接遷移型半導体を材料とした超構造半導体の研究Principal Investigator
- Principal Investigator
  
  矢口裕之, 鳥山欽哉
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
  Tohoku University
ナイトライド系化合物半導体の立方晶構造変換ヘテロエピタキシー機構の研究
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo

[Book] Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy2013
- Author(s)
  S. Yoshida, Y. Hijikata, and H. Yaguchi
- Total Pages
  26
- Publisher
  INTECH open access publisher
- Data Source
  KAKENHI-PROJECT-24560365
[Book] Thermal Oxidation Mechanism of Silicon Carbide2013
- Author(s)
  Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida
- Total Pages
  26
- Publisher
  INTECH open access publisher
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Influence of Laser Irradiation on the Photoluminescence Intensity of InGaAsN Quantum Wells2021
- Author(s)
  Md. Zamil Sultan, Shuhei Yagi, Kengo Takamiya, Hiroyuki Yaguchi and Osamu Ueda
- Journal Title
  
  North American Academic Research Journal
  
  Volume: 4 Pages: 240-251
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612
[Journal Article] Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence2021
- Author(s)
  Sanjida Ferdous, Hiroki Iwai, Norihiko Kamata, Hiroyuki Yaguchi, Shuhei Yagi
- Journal Title
  
  physica status solidi (b)
  
  Volume: 258 Issue: 11
- DOI
  10.1002/pssb.202100119
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02612
[Journal Article] Detection of nonradiative recombination centers in GaPN (N:0.105%) by below-gap excitation light2020
- Author(s)
  S. Ferdous, N. Kamata, S. Yagi, and H. Yaguchi
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 257 Issue: 2 Pages: 1900377-1900377
- DOI
  10.1002/pssb.201900377
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17KK0127, KAKENHI-PROJECT-19H02612
[Journal Article] Photoluminescence intensity change of GaP1-xNx alloys by laser irradiation2020
- Author(s)
  Sultan Md. Zamil、Shiroma Akinori、Yagi Shuhei、Takamiya Kengo、Yaguchi Hiroyuki
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 9 Pages: 095302-095302
- DOI
  10.1063/5.0020793
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612, KAKENHI-PROJECT-17KK0127
[Journal Article] Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates2017
- Author(s)
  K. Ishii, S. Yagi, and H. Yaguchi
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 254 Issue: 2 Pages: 1600542-1600542
- DOI
  10.1002/pssb.201600542
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-26390057
[Journal Article] Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation2016
- Author(s)
  N. Kamata, M. Suetsugu, D. Haque, S. Yagi, H. Yaguchi, F. Karlsson, P.O. Holtz
- Journal Title
  
  Physica Stat. Solidi. B
  
  Volume: 254 Issue: 2 Pages: 1600566-1600566
- DOI
  10.1002/pssb.201600566
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05895, KAKENHI-PROJECT-26390057
[Journal Article] Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers2015
- Author(s)
  Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 327-330
- DOI
  10.4028/www.scientific.net/msf.821-823.327
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Microstructures of InN films on 4H-SiC (0001) substrate grown by RF-MBE2015
- Author(s)
  P. Jantawongrit, S. Sanorpim, H. Yaguchi, M. Orihara, and P. Limsuwan
- Journal Title
  
  J. Semicond.
  
  Volume: 36 Issue: 8 Pages: 083002-083002
- DOI
  10.1088/1674-4926/36/8/083002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390057
[Journal Article] Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy2015
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, and H. Yaguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 5 Pages: 051201-051201
- DOI
  10.7567/jjap.54.051201
- NAID
  210000145121
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360004, KAKENHI-PROJECT-26390057
[Journal Article] Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry2015
- Author(s)
  D. Goto, Y. Hijikata, S. Yagi, and H. Yaguchi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 117 Issue: 9 Pages: 095306-095306
- DOI
  10.1063/1.4914050
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N δ-doped superlattices2015
- Author(s)
  T. Suzuki, K. Okada, S. Yagi, S. Naitoh, Y. Shoji, Y. Hijikata, Y. Okada, and H. Yaguchi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 54 Issue: 8S1 Pages: 08KA07-08KA07
- DOI
  10.7567/jjap.54.08ka07
- NAID
  210000145536
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390057, KAKENHI-PROJECT-25286048
[Journal Article] Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry2015
- Author(s)
  D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 371-374
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Control of intermediate-band configulation in GaAs:N δ-doped superlattice2015
- Author(s)
  K. Osada, T. Suzuki, S. Yagi, S. Naitoh, Y. Shoji, Y. Y. Hijikata, Y. Okada, and H. Yaguchi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 8S1 Pages: 08KA04-08KA04
- DOI
  10.7567/jjap.54.08ka04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26390057, KAKENHI-PROJECT-25286048
[Journal Article] First-principles study on the conduction band electron states of GaAsN alloys2014
- Author(s)
  K. Sakamoto and H. Yaguchi
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 11 Issue: 3-4 Pages: 911-913
- DOI
  10.1002/pssc.201300531
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360004, KAKENHI-PROJECT-26390057
[Journal Article] Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys2014
- Author(s)
  W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 211 Issue: 4 Pages: 752-755
- DOI
  10.1002/pssa.201300462
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360004, KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-26390057
[Journal Article] Enhanced optical absorption due to E+-related band transition in GaAs:N2014
- Author(s)
  S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H.
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 10 Pages: 102301-102301
- DOI
  10.7567/apex.7.102301
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-26390057
[Journal Article] Si emission into the oxide layer during oxidation of silicon carbide2014
- Author(s)
  Yasuto Hijikata, Yurie Akasaka, Shuhei Yagi, and Hiroyuki Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 553-556
- DOI
  10.4028/www.scientific.net/msf.778-780.553
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: In Press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2013
- Author(s)
  RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 85-87
- DOI
  10.1016/j.jcrysgro.2012.12.043
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 307-309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286048
[Journal Article] Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model2013
- Author(s)
  Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, and Sadafumi Yoshida
- Journal Title
  
  Materials Science Forum
  
  Volume: 740-742 Pages: 833-836
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] RF-MBE growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe,
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (In Press)
- URL
  http://www.sciencedirect.com/science/journal/00220248?oldURL=y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013
- Author(s)
  Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
- Journal Title
  
  THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
  
  Volume: 1566 (1) Pages: 538-539
- DOI
  10.1063/1.4848523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] RF-MBE growth of cubic InN nano-scale dots on cubic GaN2013
- Author(s)
  J. Suzuki, M. Orihara, S. Yagi, Y. Hijikata, H. Yaguchi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 454-458
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286048
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K. Takamiya, Y.Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: Vol.706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H. Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry2012
- Author(s)
  Keiko Kouda, Yasuto Hijikata, Shuhei Yagi, and Hiroyuki Yaguchi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112 Issue: 2 Pages: 24502-24502
- DOI
  10.1063/1.4736801
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Micro-Photoluminescence study on the influence of oxidation on stacking faults in 4H-SiC epilayers2012
- Author(s)
  Hikaru Yamagata, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 5 Pages: 51302-51302
- DOI
  10.1143/apex.5.051302
- NAID
  10030593386
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5 Issue: 11 Pages: 111201-111201
- DOI
  10.1143/apex.5.111201
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-20104004, KAKENHI-PROJECT-23360135, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] Single photon emission from nitrogen delta-doped semiconductors2011
- Author(s)
  H.Yaguchi
- Journal Title
  
  Proc.of SPIE
  
  Volume: 7945
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Single photon emission from nitrogen delta-doped semiconductors2011
- Author(s)
  H. Yaguchi
- Journal Title
  
  SPIE
  
  Volume: Vol.7945 Pages: 79452F-79452F
- DOI
  10.1117/12.865770
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] A simple theoretical approach to analyze polarization properties insemipolar and nonpolar InGaN quantum wells2011
- Author(s)
  Atsushi A. Yamaguchi and K. Kojima
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 98
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560012
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single is electronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Physica
  
  Volume: Vol.42, No10 Issue: 10 Pages: 2529-2531
- DOI
  10.1016/j.physe.2009.12.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2529-2531
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence study of isoelectronic traps in dilute GaAsN alloys2007
- Author(s)
  H.Yaguchi et al.
- Journal Title
  
  Physica Status Solidi (c) (未定)(to be published)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560004
[Journal Article] Photoluminescence study of isoelectronic traps in dilute GaAsN alloys2007
- Author(s)
  H.Yaguchi et al.
- Journal Title
  
  Physica Status Solidi (c) to be published
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560004
[Journal Article] Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys2006
- Author(s)
  H.Yaguchi et al.
- Journal Title
  
  Physica Status Solidi (b) (to be published)(未定)
- Data Source
  KAKENHI-PROJECT-17560004
[Journal Article] Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys2006
- Author(s)
  H.Yaguchi et al.
- Journal Title
  
  Physica Status Solidi (c) Vol.3, No. 6
  
  Pages: 1907-1910
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560004
[Journal Article] Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys2006
- Author(s)
  H.Yaguchi et al.
- Journal Title
  
  Physica Status Solidi (c) Vol.3 No.6
  
  Pages: 1907-1910
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560004
[Journal Article] Photo-induced improvement of radiative efficient and structural changes in GaAsN alloys2006
- Author(s)
  H.Yaguchi et al.
- Journal Title
  
  Physica Status Solidi (c) Vol.e,No.6
  
  Pages: 1907-1910
- Data Source
  KAKENHI-PROJECT-17560004
[Presentation] First-Principles Study of the Band Tail States and Optical Properties of Gallium Phosphide Nitride Alloys2022
- Author(s)
  Hiroyuki Yaguchi
- Organizer
  International Conference on the Physics of Semiconductors 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] Arsenic Composition Dependence of Up-Conversion Luminescence of GaPAsN Alloys2022
- Author(s)
  Kengo Takamiya, Sultan Md. Zamil, Shuhei Yagi, Hiroyuki Yaguchi
- Organizer
  International Conference on the Physics of Semiconductors 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] 中間バンド型GaPN混晶のキャリア再結合過程の光学的評価：窒素濃度1.4％と3.2％の比較2021
- Author(s)
  岩井　宏樹、フェルドス　サンジーダ、鎌田　憲彦、八木　修平、矢口　裕之
- Organizer
  第68回応用物理学会春季学術講演会、19p-Z29-1
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] InGaN-LED動作時の禁制帯内励起光照射による非発光再結合準位の検出2021
- Author(s)
  千代田　夏樹、鎌田　憲彦、矢口　裕之
- Organizer
  第68回応用物理学会春季学術講演会、19p-Z29-2
- Data Source
  KAKENHI-PROJECT-18K04954
[Presentation] 第一原理計算を用いたGaPN混晶のバンドテイルによる光吸収についての検討2021
- Author(s)
  矢口裕之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] Optical Characterization of Carrier Recombination Process in GaPN Alloys: Excitation Source and Nitrogen Concentration Dependence2021
- Author(s)
  Hiroki Iwai, Sanjida Ferdous, Norihiko Kamata, Shuhei Yagi, Hiroyuki Yaguchi
- Organizer
  2021 MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] 中間バンド型GaPN混晶のキャリア再結合過程の光学的評価：窒素濃度1.4%と3.2%の比較2021
- Author(s)
  岩井広樹, フェルドスサンジーダ, 鎌田憲彦, 八木修平, 矢口裕之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] GaPN混晶のアップコンバージョン発光へのバンドギャップエネルギーを超える励起光の影響2020
- Author(s)
  相良鋼, 高宮健吾, 八木修平, 矢口裕之
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] 第一原理計算によるGaPN 混晶におけるバンドテイル状態の検討2020
- Author(s)
  矢口裕之
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] Photoluminescence Intensity Change of InGaAsN Quantum Well by Laser Irradiation2020
- Author(s)
  Md Zamil Sultan, Shuhei Yagi, Kengo Takamiya, Hiroyuki Yaguchi
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] Laser Induced Degradation of Photoluminescence Intensity in GaPN2019
- Author(s)
  Md Zamil Sultan, Akinori Shiroma, Shuhei Yagi, Kengo Takamiya, Hiroyuki Yaguchi
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] Photoluminescence Intensity Change of GaPN by Laser Irradiation2019
- Author(s)
  Sultan Md. Zamil, Akinori Shiroma, Shuhei Yagi, Kengo Takamiya, and Hiroyuki Yaguchi
- Organizer
  7th International Workshop on Eptaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] Two-Wavelength Excited Photoluminescence Study of Upconversion Photoluminescence from GaPN Alloys2019
- Author(s)
  Hiroyuki Yaguchi, Wataru Takahashi, Kengo Takamiya, Shuhei Yagi, Norihiko Kamata, Yuji Hazama and Hidefumi Akiyama
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] Upconversion Luminescence from GaPN Alloys with Various N Compositions2019
- Author(s)
  Kengo Takamiya, Wataru Takahashi, Shuhei Yagi, Norihiko Kamata, Yuji Hazama, Hidefumi Akiyama, and Hiroyuki Yaguchi
- Organizer
  7th International Workshop on Eptaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02612
[Presentation] 中間バンド型GaPN混晶でのキャリア再結合過程の光学的評価2017
- Author(s)
  根岸知華、ドゥラルハク、鎌田憲彦、矢口裕之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] 1 eV帯InGaAs:N δドープ超格子の作製2017
- Author(s)
  梅田峻平，八木修平，宮下直也，岡田至崇，矢口裕之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] n型GaAs:N δドープ超格子の電気的特性評価2017
- Author(s)
  加藤諒，八木修平，岡田至崇，矢口裕之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Properties of dilute nitride pseudo-alloys grown using a nitrogen delta-doping technique2017
- Author(s)
  S. Yagi, Y. Okada, H. Yaguchi
- Organizer
  SPIE Photonics West OPTO (10099-14)
- Place of Presentation
  San Francisco, USA
- Year and Date
  2017-01-31
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] レーザ照射によるGaInNAs半導体の発光効率への影響2016
- Author(s)
  米倉成一、高宮健吾、八木修平、上田修、矢口裕之
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Growth of InN/GaN Dots on 4H‐SiC(0001) 4° off Vicinal Substrates by Molecular Beam Epitaxy2016
- Author(s)
  K. Matsuoka, S. Yagi, H. Yaguchi
- Organizer
  19th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Optical Characterization of Carrier Recombination Processes in GaPN by Two-Wavelength Excited Photoluminescence2016
- Author(s)
  M. Suetsugu, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson, and P. -O. Holtz
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  富山国際会議場（富山県・富山市）
- Year and Date
  2016-06-27
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Nano-Structural Characterization of Cubic InN Dots Grown on Single-Domain Cubic GaN by Transmission Electron Microscopy2016
- Author(s)
  S. Yagi, K. Ishii, H. Yaguchi
- Organizer
  19th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Effect of Low Temperature Growth and a Distributed Bragg Reflector on the emission　from Molecular Beam Epitaxy‐Grown Er δ‐doped GaAs2016
- Author(s)
  K. Takamiya, M. Suto, K. Iimura, S. Yagi, H. Yaguchi
- Organizer
  19th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Self-Organized Growth of Cubic InN Dot Arrays on MgO (001) Vicinal Substrates2016
- Author(s)
  K. Ishii, S. Yagi, and H. Yaguchi
- Organizer
  43rd International Symposium on Compound Semiconductors
- Place of Presentation
  Toyama, Japan
- Year and Date
  2016-06-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 4H-SiC微傾斜基板上に作製した自己組織化InN/GaNドットの配列性制御2016
- Author(s)
  松岡圭佑，八木修平，矢口裕之
- Organizer
  第78回応用物理学会春季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 第一原理計算によるInAsN混晶の伝導帯の解析2015
- Author(s)
  宮崎貴史, 八木修平, 矢口裕之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 第一原理計算によるGaAs:N δドープ超格子における光学遷移に関する研究2015
- Author(s)
  吉川洋生, 八木修平, 矢口裕之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 第一原理計算によるInAsN混晶のバンド構造に関する研究2015
- Author(s)
  宮崎貴史, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学(神奈川県・平塚市)
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Nonradiative recombination pathway via the intermediate band in GaP1-xNx studied by below-gap excitation2015
- Author(s)
  M. Suetsugu, M. Eriksson, K. F. Karlsson, P. O. Holtz, N. Kamata, S. Yagi, and H. Yaguchi
- Organizer
  28th Int. Conf. Defects in Semiconductors
- Place of Presentation
  Espoo(Finland)
- Year and Date
  2015-07-31
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] GaAs:N δドープ超格子を有する太陽電池の二段階吸収2015
- Author(s)
  鈴木智也, 八木修平, 土方泰斗, 岡田至崇, 矢口裕之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県・平塚市）
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Lateral alignment of InN nano-scale dots grown on 4H-SiC (0001)2015
- Author(s)
  S. Mori, S. Yagi, M. Orihara, K. Takamiya and H. Yaguchi
- Organizer
  11th International Conference on Nitride Semiconductors
- Place of Presentation
  Beijin, China
- Year and Date
  2015-08-30
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Epitaxial relationship of GaN grown on GaAs (110) by RF-molecular beam2015
- Author(s)
  T. Ikarashi, M. Orihara, S. Yagi, S. Kuboya, R. Katayama, and H. Yaguchi
- Organizer
  11th Int. Conf. Nitride Semiconductors
- Place of Presentation
  Beijing(China)
- Year and Date
  2015-09-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Optical and Structural Characterization of GaAs:N δ-Doped Superlattices Grown by Molecular Beam Epitaxy2015
- Author(s)
  S. Yagi, Y. Sato, N. Ueyama, T. Suzuki, K. Osada, Y. Okada, and H. Yaguchi
- Organizer
  5th Int. Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  Hsinchu(Taiwan)
- Year and Date
  2015-09-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Lateral alignment of InN nano-scale dots grown on 4H-SiC (0001) vicinal substrates2015
- Author(s)
  S. Mori, S. Yagi, M. Orihara, K. Takamiya, and H. Yaguchi
- Organizer
  11th Int. Conf. Nitride Semiconductors
- Place of Presentation
  Beijing(China)
- Year and Date
  2015-09-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Luminescence and Quenching Properties in GaPN Revealed by Below-Gap Excitation2014
- Author(s)
  M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata, S. Yagi, and H. Yaguchi
- Organizer
  The 14th International Symposium on the Science and Technology of Lighting
- Place of Presentation
  コモ(イタリア)
- Year and Date
  2014-06-23
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers2014
- Author(s)
  Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi
- Organizer
  10th Europian Concerence on Silicon Carbide and Related Materilas
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-24
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Molecular Beam Epitaxy Growth of Intermediate Band Materials Based on GaAs:N δ-Doped Superlattices2014
- Author(s)
  T. Suzuki, K. Osada, S. Yagi, S. Naito, Y. Hijikata, Y. Okada, and H. Yaguchi
- Organizer
  6th World Conference on Photovoltaic Energy Conversion
- Place of Presentation
  国立京都国際会館（京都府・京都市）
- Year and Date
  2014-11-25
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Control of Intermediate Band Configuration in GaAs:N δ-doped Superlattice2014
- Author(s)
  K. Osada, T, Suzuki, S. Yagi, S. Naito, Y. Shoji, Y. Okada, Y. Hijikata, and H. Yaguchi
- Organizer
  6th World Conference on Photovoltaic Energy Conversion
- Place of Presentation
  国立京都国際会館（京都府・京都市）
- Year and Date
  2014-11-26
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well2014
- Author(s)
  Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  モンペリエ(フランス)
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Resonant tunneling of electrons through cubic-InN quantum dots embedded2014
- Author(s)
  S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  Montpellier, France
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry2014
- Author(s)
  D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi
- Organizer
  10th Europian Concerence on Silicon Carbide and Related Materilas
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-24
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] フォトルミネッセンス法による4H-SiCエピ層中の酸化誘因欠陥の観察2014
- Author(s)
  宮野祐太郎、八木修平、土方泰斗、矢口裕之
- Organizer
  応用物理学会先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち（愛知県・名古屋市）
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] SiC酸化へのArアニール導入による酸化膜成長速度の変化2014
- Author(s)
  今野良太郎，八木修平，土方泰斗，矢口裕之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道・札幌市）
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] In-situ分光エリプソメータによるSiC酸化過程の面方位依存性測定 (II)2014
- Author(s)
  後藤大祐、八木修平、土方泰斗、矢口裕之
- Organizer
  応用物理学会先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち（愛知県・名古屋市）
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 中間バンド型太陽電池に向けたGaAs:Nδドープ超格子のMBE成長2014
- Author(s)
  鈴木智也, 長田一輝, 八木修平, 内藤俊弥, 土方泰斗, 岡田至崇, 矢口裕之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道・札幌市）
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Degradation of InGaN/GaN SQW Structure under Optical Irradiation2014
- Author(s)
  O. Ueda, A. A. Yamaguchi, S. Tanimoto, S. Nishibori, K. Kumakura, and H. Yamamoto
- Organizer
  International Workshop on Nitride Semiconductors IWN 2014
- Place of Presentation
  Wroclaw (Poland)
- Year and Date
  2014-08-27
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Anomalous excitation power dependence of the luminescence from2014
- Author(s)
  Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  Montpellier, France
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well2014
- Author(s)
  Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  Montpellier (France)
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-26390057
[Presentation] Y立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長2013
- Author(s)
  角田雅弘,森川生,窪谷茂幸,片山竜二,矢口裕之,尾鍋研太郎
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(神奈川)
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] InN/GaNドット多重積層構造に向けたGaNキャップ層成長条件の検討2013
- Author(s)
  徳田英俊, 折原操, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012
- Author(s)
  K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
- Organizer
  31st International Conference on the Physics of Semiconductors
- Place of Presentation
  スイス連邦工科大学チューリッヒ校(スイス)
- Year and Date
  2012-08-02
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Growth of Cubic AlN Films on MgO substrates by MBE2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, H. Yaguchi, K. Onabe,
- Organizer
  GCOE International Sympsium on Physical Sciences Frontier
- Place of Presentation
  東京
- Year and Date
  2012-12-09
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] GaAs中窒素δドープ超格子のエネルギー構造評価2012
- Author(s)
  野口駿介, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光2012
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] First Principles Study on the Effect of the Position of Nitrogen Atoms on the Electronic Structure of GaAsN2012
- Author(s)
  K. Sakamoto and H. Yaguchi
- Organizer
  31st International Conference on the Physics of Semiconductors
- Place of Presentation
  スイス連邦工科大学チューリッヒ校(スイス)
- Year and Date
  2012-07-31
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] 窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響2012
- Author(s)
  新井佑也, 星野真也, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良県新公会堂(奈良県)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012
- Author(s)
  金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] 第一原理計算によるGaAsNの電子構造に対する原子配置の影響に関する研究2012
- Author(s)
  坂元圭, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec, Canada)(招待講演)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K.Takamiya, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Single photon emission from nitrogen delta-doped semiconductors2011
- Author(s)
  H. Yaguchi
- Organizer
  SPIE Photonics West OPTO
- Place of Presentation
  Moscone Center (San Francisco, USA)
- Year and Date
  2011-01-27
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H.Yaguchi
- Organizer
  The 7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec,Canada)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Is oelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Organizer
  The 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs(110)中の単一等電子トラップからの発光の偏光特性2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Single photon emission from nitrogen delta-doped semiconductors2011
- Author(s)
  H.Yaguchi
- Organizer
  SPIE Photonics West OPTO
- Place of Presentation
  Mosone Center (San Francisco, USA)
- Year and Date
  2011-01-27
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトリフレクタンススペクトル2010
- Author(s)
  大久保航, 石川輝, 八木修平, 土方泰斗, 吉田貞史, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010
- Author(s)
  星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2010
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010
- Author(s)
  石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Photoluminescence from single is oelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2009
- Author(s)
  T. Fukushima, M. Ito, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  神戸国際会議場 (兵庫県)
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Polarization properties of photoluminescence from individual isoelectronic traps in nitrogen delta-doped semiconductors : effect of host crystals2009
- Author(s)
  矢口裕之
- Organizer
  The Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  徳島県・阿南工業高等専門学校
- Year and Date
  2009-08-11
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] GaAs(001)および(111)面基板上に作製した窒素δドープGaAs中の等電子トラップからの発光2009
- Author(s)
  福島俊之, 矢口裕之
- Organizer
  第5回量子ナノ材料セミナー
- Place of Presentation
  埼玉県・埼玉大学
- Year and Date
  2009-07-29
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光2009
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] InP(001)板上へのInPN薄膜のMOVPE成長2009
- Author(s)
  関裕紀,窪谷茂幸,ティユクァントゥ,片山竜二,矢口裕之,尾鍋研太郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2009
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2009
- Author(s)
  福島俊之, M.Ito, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, S.Kuboys, 片山竜二, 尾鍋研太郎
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  兵庫県・神戸国際会議場
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2009
- Author(s)
  関裕紀, 窪谷茂幸, ティユクァントゥ, 片山竜二, 矢口裕之, 尾鍋研太郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学 (茨城)
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Polarization properties of photoluminescence from individual is oelectronic traps in nitrogen delta-doped semiconductors : effect of host crystals2009
- Author(s)
  H. Yaguchi
- Organizer
  The Second International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  阿南工業高等専門学校 (徳島県)
- Year and Date
  2009-08-11
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008
- Author(s)
  谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(千葉)
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008
- Author(s)
  谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学 (千葉)
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007
- Author(s)
  谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2007年秋季第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学 (北海道)
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007
- Author(s)
  谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2007年秋季第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学(北海道)
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Growth of Cubic AlN Films on MgO substrates by MBE
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
- Organizer
  GCOE International Sympsium on Physical Sciences Frontier
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Stacked Structure of Self-Organized Cubic InN Nano-Scale Dots Grown by
- Author(s)
  S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, and H. Yaguchi
- Organizer
  The 40th International Symposium on Compound Semiconductors
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-25286048
[Presentation] 立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長
- Author(s)
  角田雅弘、森川生、窪谷茂幸、片山竜二、矢口裕之、尾鍋研太郎
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学（厚木市）
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 堆積と熱酸化による4H-SiC MOS 構造の作製(II)
- Author(s)
  大谷篤志, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市浦和区）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 堆積と熱酸化による4H-SiC MOS 構造の作製
- Author(s)
  大谷篤志，八木修平，土方泰斗，矢口裕之
- Organizer
  第21回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  大阪（大阪市中央公会堂）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model
- Author(s)
  Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida
- Organizer
  9th European Conference of SiC and Related Matterials
- Place of Presentation
  Russia (Saint-Petersburg)
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 第一原理計算によるGaAsN混晶の伝導帯の解析に関する研究
- Author(s)
  坂本圭, 矢口裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] In-situ分光エリプソメーターによるSiC酸化過程の面方位依存性測定
- Author(s)
  後藤大祐, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市浦和区）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 堆積と熱酸化による4H-SiC MOS 構造の作製
- Author(s)
  大谷篤志，八木修平，土方泰斗，矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山（愛媛/松山大学）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] First Principles Study on the Conduction Band Electron States of GaAsN Alloys
- Author(s)
  K. Sakamoto and H. Yaguchi
- Organizer
  10th International Conference on Nitride Semiconductors 2013
- Place of Presentation
  ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Si emission into the oxide layer during oxidation of silicon carbide
- Author(s)
  Yasuto Hijikata, Yurie Akasaka, Shuhei Yagi, and Hiroyuki Yaguchi
- Organizer
  International Conference on SiC and Related Materials (ICSCRM2013)
- Place of Presentation
  Seagaia Convention Center (宮崎県宮崎市)
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Photoreflectance Study of the Temperature Dependence of Excitonic Transitions in Dilute GaAsN Alloys
- Author(s)
  W. Okubo, S. Yagi, Y. Hijikata, K. Onabe and H. Yaguchi
- Organizer
  10th International Conference on Nitride Semiconductors 2013
- Place of Presentation
  ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
- Author(s)
  K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
- Organizer
  4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  UCLAコンファレンス・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] 4H-SiCエピ膜中積層欠陥への熱酸化の影響について
- Author(s)
  宮野祐太郎，矢口裕之，土方泰斗，八木修平
- Organizer
  第60回春季応用物理学会講演会
- Place of Presentation
  厚木（神奈川工科大学）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] スパッタ薄膜成長による4H-SiC 基板中の非発光再結合中心生成
- Author(s)
  加藤寿悠，八木修平，土方泰斗，矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山（愛媛/松山大学）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 第一原理計算によるInAsN混晶のバンド構造に関する研究
- Author(s)
  宮崎貴史, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学、神奈川
- Year and Date
  2015-03-12 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25286048

1. ONABE Kentaro (50204227)

# of Collaborated Projects: 11 results

# of Collaborated Products: 49 results
2. KONDO Takashi (60205557)

# of Collaborated Projects: 6 results

# of Collaborated Products: 0 results
3. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
4. KATAYAMA Ryuji (40343115)

# of Collaborated Projects: 5 results

# of Collaborated Products: 46 results
5. HIJIKATA Yasuto (70322021)

# of Collaborated Projects: 5 results

# of Collaborated Products: 62 results
6. ITO Ryoichi (40133102)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
7. YAGI Shuhei (30421415)

# of Collaborated Projects: 4 results

# of Collaborated Products: 46 results
8. KUBOYA Shigeyuki (70583615)

# of Collaborated Projects: 3 results

# of Collaborated Products: 38 results
9. AKIYAMA Hidefumi (40251491)

# of Collaborated Projects: 3 results

# of Collaborated Products: 31 results
10. UEDA Osamu (50418076)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
11. IKENAGA Noriaki (30512371)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
12. USAMI Noritaka (20262107)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. YOSHIDA Sadafumi (70302510)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
14. 深津晋 (60199164)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
15. 高宮健吾 (70739458)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
16. YAMAMOTO Takahisa (20220478)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. YAMAGUCHI Atsushi (60449428)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
18. SAKUMA Yoshiki (60354346)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. GONOKAMI Makoto (70161809)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. YOSHIMOTO Masahiro (20210776)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. Ishitani Yoshihiro (60291481)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. Ken Morita (30448344)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. Bei Ma (90718420)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. OSADA Toshihito (00192526)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. MASUDA Atsushi (30283154)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. SHIMIZU Tatsuo (30019715)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. MORIMOTO Akiharu (60143880)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. Kamata Norihiko (50211173)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
29. 鳥山欽哉 (20183882)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 篠塚雄三 (30144918)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
31. 平山秀樹 (70270593)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
32. SAKUNTAM Sanorpim

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
33. Kensuke Oki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
34. MA BEI

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

Yaguchi Hiroyuki 矢口 裕之

矢口 裕之 ヤグチ ヒロユキ

YAGUCHI Hiroyuki 矢口 裕之

YAMAGUCHI Hiroyuki 矢口 裕之

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Improvement of the efficiency of photovoltaic cells using two-step optical absorption through band tail statesPrincipal Investigator

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Development of High Efficiency Photovoltaic Cells Using Electron Localized States in Dilute Nitride SemiconductorsPrincipal Investigator

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Generation and control of quantum correlated photons from atomic-layer doped semiconductorsPrincipal Investigator

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Single Photon Generation from locally doped semiconductorsPrincipal Investigator

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Study on single photon emission utilizing isoelectronic trapsPrincipal Investigator

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Yaguchi Hiroyuki 矢口裕之

矢口裕之ヤグチヒロユキ

YAGUCHI Hiroyuki 矢口裕之

YAMAGUCHI Hiroyuki 矢口裕之