Kuroki Shin-Ichiro 黒木伸一郎

… Alternative Names

KUROKI Shin-ichiro 黒木伸一郎

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Researcher Number	70400281
Other IDs	https://orcid.org/0000-0002-0539-9941
Affiliation (Current)	2026: 広島大学, 半導体産業技術研究所, 教授
Affiliation (based on the past Project Information) *help	2024 – 2026: 広島大学, 半導体産業技術研究所, 教授 2021 – 2022: 広島大学, ナノデバイス研究所, 教授 2018 – 2021: 広島大学, ナノデバイス・バイオ融合科学研究所, 教授 2012 – 2017: 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 2007 – 2011: Tohoku University, 大学院・工学研究科, 助教
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Broad Section C / Medium-sized Section 21:Electrical and electronic engineering and related fields / Biomedical engineering/Biological material science Except Principal Investigator Electron device/Electronic equipment / Medium-sized Section 30:Applied physics and engineering and related fields
Keywords	Principal Investigator CMOS集積回路 / 耐放射線 / 極限環境エレクトロニクス / MOSFET / シリコンカーバイド / 電子デバイス / シリコンカーバイド半導体 / 耐放射線デバイス / 耐高温動作 / 廃炉技術 … More / 高温動作 / ワイドバンドギャップ半導体 / 高温 / SiC / 高温動作集積回路 / 耐放射線集積回路 / 極限環境 / 電子デバイス・集積回路 / 電子デバイス・電子機器 / 耐高温デバイス / MOSFETs / シリコンカーバイド極限環境エレクトロニクス / 原子力発電所廃炉 / 耐高温 / 集積回路 / 移植・再生医療 / 移植・再生医 / TFT / 人工腎臓 / マイクロアレイ / 薄膜トランジスタ / マイクロ・ナノデバイス / ナノバイオ / 人工臓器工学 … More Except Principal Investigator TFT / 結晶配向制御 / Siナノワイヤー / 量子センシング / 光物性 / スピン欠陥 / 結晶工学 / インパルス電磁波 / FACTORVIII / DCIS / IDC / 非浸潤癌 / 浸潤癌 / 画像認識 / 複素インピーダンス / CMOS回路 / マイクロ波 / 回路 / CMOS / 計測システム / 乳がん / 免疫染色 / 複素誘電率 / 血管新生 / 乳腺腫瘍 / 領域選択プロセッシング / センサーネットワーク / レーザーアニール / 半導体プロセス / 薄膜トランジスタ / チャネリング注入 / 結晶配向 / ナノワイヤー / 多結晶シリコン / チャネリング / イオン注入 / 活性化率 / ノックオン注入 / マイクロ波アニール / 極浅接合形成 / 結晶粒 / 電子デバイス Less

人類のフロンティア拡大を支えるSiC極限環境エレクトロニクスの確立Principal Investigator
- Principal Investigator
  
  黒木伸一郎
- Project Period (FY)
  2025 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Hiroshima University
Research on SiC Extreme-Envionment Electronics for Exploring Human's New FrontiersPrincipal Investigator
- Principal Investigator
  
  黒木伸一郎
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Hiroshima University
Research on Silicon-Carbide IoT Platform for Harsh Environment ApplicationsPrincipal Investigator
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Hiroshima University
Quantum state control with advanced optical technique for spin defects in silicon carbide
- Principal Investigator
  
  Ohshima Takeshi
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  National Institutes for Quantum Science and Technology
Research on Silicon Carbide Harsh Environment ElectronicsPrincipal Investigator
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Research on Radiation-Hardened CMOS Integrated Circuits using Wide Bandgap SiC Semiconductor(Fostering Joint International Research)Principal Investigator
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Fund for the Promotion of Joint International Research (Fostering Joint International Research)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Research on the measurement technology of breast tumor angiogenesis
- Principal Investigator
  
  Kikkawa Takamaro
- Project Period (FY)
  2013 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
High radiation resistant CMOS integrated circuits using Wide-Band Gap SiC SemiconductorPrincipal Investigator
- Principal Investigator
  
  Shin-Ichiro Kuroki
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Green LSI Technology Using High-Performance TFT Fabricated by Area-Selective Processing
- Principal Investigator
  
  KOTANI Koji
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Orientation-Aligned Si Nano-wires Formed by Multiple-Channeling Ion-Implantation
- Principal Investigator
  
  ITO Takashi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Control of 3D-Crystallization of Silicon Films on Insulating Substrates and Its Application to Thin Film Transistors
- Principal Investigator
  
  ITO Takashi
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
半導体デバイスの超微細化に向けた革新的な高濃度極浅接合形成技術の創出
- Principal Investigator
  
  伊藤隆司
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tohoku University
Basic Research on TFT Active-Matrix Artificial KidneyPrincipal Investigator
- Principal Investigator
  
  KUROKI Shin-ichiro
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Biomedical engineering/Biological material science
- Research Institution
  Tohoku University

[Journal Article] Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications2025
- Author(s)
  Van Cuong Vuong、Meguro Tatsuya、Ishikawa Seiji、Maeda Tomonori、Sezaki Hiroshi、Kuroki Shin-Ichiro
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 13 Pages: 161-167
- DOI
  10.1109/jeds.2025.3546959
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24H00035
[Journal Article] Impact of interface oxide type on the gamma radiation response of SiC TTL ICs2024
- Author(s)
  Metreveli Alex、Cuong Van、Kuroki Shin-Ichiro、Tanaka Kenichi、Zetterling Carl-Mikael
- Journal Title
  
  Facta universitatis - series: Electronics and Energetics
  
  Volume: 37 Issue: 4 Pages: 599-607
- DOI
  10.2298/fuee2404599m
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Journal Article] Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits2024
- Author(s)
  Van Cuong Vuong、Meguro Tatsuya、Ishikawa Seiji、Maeda Tomonori、Sezaki Hiroshi、Kuroki Shin-Ichiro
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 8 Pages: 086503-086503
- DOI
  10.35848/1347-4065/ad665b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24H00035
[Journal Article] 4H-SiC Radiation Hardened Static Random Access Memory2024
- Author(s)
  Kuroki Shin-Ichiro、Kai Toya、Ozaki Taisei、Kojima Kazutoshi、Takeyama Akinori、Ohshima Takeshi、Tanaka Yasunori
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 45 Issue: 12 Pages: 2280-2283
- DOI
  10.1109/led.2024.3466612
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24H00035
[Journal Article] 4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays2024
- Author(s)
  Meguro Tatsuya、Tsutsumi Masayuki、Takeyama Akinori、Ohshima Takeshi、Tanaka Yasunori、Kuroki Shin-Ichiro
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 8 Pages: 081005-081005
- DOI
  10.35848/1882-0786/ad665f
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24H00035
[Journal Article] Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor2023
- Author(s)
  Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 1 Pages: 100-103
- DOI
  10.1109/led.2022.3226494
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments2023
- Author(s)
  Motoki Shu、Sato Shin-ichiro、Saiki Seiichi、Masuyama Yuta、Yamazaki Yuichi、Ohshima Takeshi、Murata Koichi、Tsuchida Hidekazu、Hijikata Yasuto
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 133 Issue: 15 Pages: 154402-154402
- DOI
  10.1063/5.0139801
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00355, KAKENHI-PROJECT-22K18292, KAKENHI-PROJECT-23K22787
[Journal Article] 500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC2022
- Author(s)
  Vuong Van Cuong, Tadashi Sato, Takamichi Miyazaki, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki and Shin-Ichiro Kuroki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 3 Pages: 036501-036501
- DOI
  10.35848/1347-4065/ac4391
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors2022
- Author(s)
  Akinori Takeyama, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki, and Takeshi Ohshima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 24 Pages: 244503-244503
- DOI
  10.1063/5.0095841
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity2022
- Author(s)
  Kazutoshi Kojima, Shin-ichiro Sato, Takeshi Ohshima, and Shin-Ichiro Kuroki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 24 Pages: 245107-245107
- DOI
  10.1063/5.0095457
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252, KAKENHI-PROJECT-20H00355
[Journal Article] Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors2022
- Author(s)
  Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 10 Pages: 1713-1716
- DOI
  10.1109/led.2022.3200124
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications2022
- Author(s)
  Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 69 Issue: 8 Pages: 4194-4199
- DOI
  10.1109/ted.2022.3184663
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations2021
- Author(s)
  Yamazaki Yuichi、Chiba Yoji、Sato Shin-ichiro、Makino Takahiro、Yamada Naoto、Satoh Takahiro、Kojima Kazutoshi、Hijikata Yasuto、Tsuchida Hidekazu、Hoshino Norihiro、Lee Sang-Yun、Ohshima Takeshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 2 Pages: 021106-021106
- DOI
  10.1063/5.0028318
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355, KAKENHI-PROJECT-20H02673
[Journal Article] Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC2021
- Author(s)
  Kosuke Muraoka、Seiji Ishikawa、Hiroshi Sezaki、Maeda Tomonori、 Satoshi Yasuno、Tomoyuki Koganezawa、Shin-Ichiro Kuroki
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 121 Pages: 105343-105343
- DOI
  10.1016/j.mssp.2020.105343
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Influences of hydrogen ion irradiation on NcVsi formation in 4H-silicon carbide2021
- Author(s)
  Narahara Takuma、Sato Shin-ichiro、Kojima Kazutoshi、Hijikata Yasuto、Ohshima Takeshi
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 2 Pages: 021004-021004
- DOI
  10.35848/1882-0786/abdc9e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC2020
- Author(s)
  Vuong Van Cuong, Takamichi Miyazaki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Yasuno Satoshi, Tomoyuki Koganezawa, Shin-Ichiro Kuroki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 5 Pages: 056501-056501
- DOI
  10.35848/1347-4065/ab86fe
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications2020
- Author(s)
  Van Cuong Vuong、Seiji Ishikawa、Tomonori Maeda、Hiroshi Sezaki、Tetsuya Meguro、Shin-Ichiro Kuroki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 12 Pages: 126504-126504
- DOI
  10.35848/1347-4065/abc924
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2019
- Author(s)
  Tomoyasu Ishii, Shin-Ichiro Kuroki, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 613-616
- DOI
  10.4028/www.scientific.net/msf.963.613
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC2019
- Author(s)
  Kosuke Muraoka, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Shin-Ichiro Kuroki
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 451-455
- DOI
  10.4028/www.scientific.net/msf.963.451
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC2019
- Author(s)
  Vuong Van Cuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Yasuno Satoshi, Tomoyuki Koganezawa, Takamichi Miyazaki, Shin-Ichiro Kuroki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 11 Pages: 116501-116501
- DOI
  10.7567/1347-4065/ab47ac
- NAID
  210000157183
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2019
- Author(s)
  Jun Inoue, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 837-840
- DOI
  10.4028/www.scientific.net/msf.963.837
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] High-Temperature Reliability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications2019
- Author(s)
  Vuong Van Cuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Satoshi Yasuno, Tomoyuki Koganezawa, Takamichi Miyazaki, and Shin-Ichiro Kuroki
- Journal Title
  
  Thin Solid Films
  
  Volume: 669 Pages: 306-314
- DOI
  10.1016/j.tsf.2018.11.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC2019
- Author(s)
  Vuong Van Cuong, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Satoshi Yasuno, Tomoyuki Koganezawa, Shin-Ichiro Kuroki
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 498-501
- DOI
  10.4028/www.scientific.net/msf.963.498
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer2019
- Author(s)
  Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Akinori Takeyama, Takeshi Ohshima and Shin-Ichiro Kuroki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 8 Pages: 081007-081007
- DOI
  10.7567/1347-4065/ab2dab
- NAID
  210000156569
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2019
- Author(s)
  Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 726-729
- DOI
  10.4028/www.scientific.net/msf.963.726
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2018
- Author(s)
  J. Kajihara, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 423-427
- DOI
  10.4028/www.scientific.net/msf.924.423
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Correlation between Field Effect Mobility and Accumulation Conductance at 4H-SiC MOS Interface with Barium2018
- Author(s)
  Kosuke Muraoka, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, and Shin-Ichiro Kuroki
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 477-481
- DOI
  10.4028/www.scientific.net/msf.924.477
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Electrical properties of Ti-Si-C Ohmic contact on ion-implanted n-type 4H-SiC C face2018
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, and Shin-Ichiro Kuroki
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 409-412
- DOI
  10.4028/www.scientific.net/msf.924.409
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2018
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M.Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 971-974
- DOI
  10.4028/www.scientific.net/msf.924.971
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Effects of CF4 surface etching on 4H-SiC MOS Capacitors2018
- Author(s)
  K. Kobayakawa, K. Muraoka, H. Sezaki, S. Ishikawa, T. Maeda, and S.-I. Kuroki
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 465-468
- DOI
  10.4028/www.scientific.net/msf.924.465
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits2017
- Author(s)
  S. S. Suvanam, S-I. Kuroki, L. Lanni, R. Hadayati, T. Ohshima, T. Makino, A. Hallen, C.-M. Zetterling
- Journal Title
  
  IEEE Transactions on Nuclear Science
  
  Volume: 64 Issue: 2 Pages: 852-858
- DOI
  10.1109/tns.2016.2642899
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Journal Article] Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing2017
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 399-402
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15KK0240
[Journal Article] Formation of epitaxial Ti-Si-C Ohmic contact on 4H-SiC C face using pulsed-laser annealing2017
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, Takamichi Miyazaki, Tomoyuki Koganezawa, Satoshi Yasuno, and Shin-Ichiro Kuroki
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 110 Issue: 25 Pages: 2521081-2521085
- DOI
  10.1063/1.4987136
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253, KAKENHI-PROJECT-15KK0240
[Journal Article] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2017
- Author(s)
  S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 669-672
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Journal Article] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2017
- Author(s)
  S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 669-672
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal2017
- Author(s)
  Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Tadashi Sato, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 348-351
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing2017
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 399-402
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal2017
- Author(s)
  Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Tadashi Sato, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 348-351
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15KK0240
[Journal Article] Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation2016
- Author(s)
  S-I. Kuroki, H. Nagatsuma, M. De Silva, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 858 Pages: 864-867
- DOI
  10.4028/www.scientific.net/msf.858.864
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420331
[Journal Article] Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices2016
- Author(s)
  Milantha De Silva,Tomonori Maeda, Seiji Ishikawa,Hiroshi Sezaki, Takamichi Miyazaki, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 5 Pages: 457-460
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15KK0240
[Journal Article] Low resistance ohmic contact formation on 4H-SiC c-face with NbNi silicidation using nano-second laser annealing2016
- Author(s)
  M. D. Silva, S. Ishikawa, T. Kikkawa, and S.-I. Kuroki
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 858 Pages: 549-552
- DOI
  10.4028/www.scientific.net/msf.858.549
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25420331
[Journal Article] 4H-SiC nMOSFETs with As-doped S/D and NbNi Silicide ohmic contacts2016
- Author(s)
  H. Nagatsuma, S-I. Kuroki, M. De Silva, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 858 Pages: 573-576
- DOI
  10.4028/www.scientific.net/msf.858.573
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420331
[Journal Article] Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing2016
- Author(s)
  Milantha De Silva,Seiji Ishikawa, Takamichi Miyazaki, Takamaro Kikkawa,and Shin-Ichiro Kuroki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 109 Issue: 1
- DOI
  10.1063/1.4955406
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15KK0240
[Journal Article] High performance Poly-Si TFTs with Highly Bi-axially Oriented Poly-Si Thin Films Using DLB Continuous-wave Laser Lateral Crystallization2014
- Author(s)
  Masayuki Yamano, Shin-Ichiro Kuroki, Tadashi Sato and Koji Kotani
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360144
[Journal Article] High-performance poly-Si thin film transistors with highly biaxially oriented poly-Si thin films using double line beam continuous-wave laser lateral crystallization2014
- Author(s)
  Masayuki Yamano, Shin-Ichiro Kuroki, Tadashi Sato and Koji Kotani
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.53 Issue: 3S1 Pages: 03CC02-03CC02
- DOI
  10.7567/jjap.53.03cc02
- NAID
  210000143470
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360144
[Journal Article] Low resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC2014
- Author(s)
  Milantha De Silva, Tadashi Sato, Shin-Ichiro Kuroki and Takamaro Kikkawa
- Journal Title
  
  Material Science Forum
  
  Volume: 778-780 Pages: 689-692
- DOI
  10.4028/www.scientific.net/msf.778-780.689
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420331
[Journal Article] In-Plane Grain Orientation Alignment of Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations2012
- Author(s)
  Anri Nakajima, Shin-Ichiro Kuroki, Shuntaro Fujii, and Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Carrier transport and its variation of laser-lateral crystallized poly-Si TFTs2011
- Author(s)
  S.-I. Kuroki, S. Fujii, K. Kotani, andT. Ito
- Journal Title
  
  Elec. Lett.
  
  Volume: 47, 24
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams2011
- Author(s)
  S.Kuroki
- Journal Title
  
  J.Electrochem.Soc.
  
  Volume: 158 Issue: 9 Pages: H924-H924
- DOI
  10.1149/1.3610410
- NAID
  20001037453
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360157, KAKENHI-PROJECT-23360144
[Journal Article] Strain-Induced Back Channel Electron Mobility Enhancement in Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization2011
- Author(s)
  Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phy.
  
  Volume: Vol.50
- NAID
  210000070347
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Carrier transport and its variation of laser-lateral-crystallized poly-Si TFTs2011
- Author(s)
  S.Kuroki
- Journal Title
  
  Electronics Letters
  
  Volume: 47 Issue: 24 Pages: 1336-1338
- DOI
  10.1049/el.2011.2854
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360157, KAKENHI-PROJECT-23360144
[Journal Article] Seed-Free Fabrication of Highly Bi-Axially Oriented Poly-Si Thin Films by Continuous-Wave Laser Crystallization with Double-Line Beams2011
- Author(s)
  Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani, and Takashi Ito
- Journal Title
  
  J. Electrochem. Soc.
  
  Volume: 158, 9
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films2010
- Author(s)
  Shuntaro Fujii, Shin-Ichiro Kuroki, Masayuki Numata, Koji Kotani, Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.48
- NAID
  210000066640
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Ferroelectric Properties of Lead Zirconate Titanate Thin Film on Glass Substrate Crystallized by Continuous-Wave Green Laser Annealing2010
- Author(s)
  Jun Jiang, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19680022
[Journal Article] Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors2010
- Author(s)
  Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, and Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.49
- NAID
  210000068329
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors2010
- Author(s)
  S.Kuroki
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: 49
- NAID
  210000068329
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels2010
- Author(s)
  Takashi ITO, Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI
- Journal Title
  
  IEICE TRANCE. ELECTRON.
  
  Volume: Vol.E93-C, No.11 Pages: 1638-1644
- NAID
  10027983872
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Enhancement of Current Drivability of Nanograting Polycrystalline Silicon Thin-Film Transistors2010
- Author(s)
  Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys 49
- NAID
  210000068329
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19680022
[Journal Article] Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films2009
- Author(s)
  Shuntaro Fujii, Shin-Ichiro Kuroki, Masayuki Numata, Koji Kotani, Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys 48
- NAID
  210000066640
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19680022
[Journal Article] Low-Temperature Recrystallization of Ferroelectric Lead Zirconate Titanate Thin Films on Glass Substrate Using Continuous-Wave Green Laser2009
- Author(s)
  Shin-Ichiro Kuroki, Kiichiro Tago, Koji Kotani, Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys 48
- NAID
  210000066653
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19680022
[Journal Article] Roughness Reduction in Polycrystalline Silicon Thin Films Formed by Continuous-Wave Laser Lateral Crystallization with Cap SiO2 Thin Films2009
- Author(s)
  Vol.48Sunichiro Fujii, Shin-Ichiro Kuroki, Masaki Numata, Koji Kotani, and Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.48
- NAID
  210000066640
- Data Source
  KAKENHI-PROJECT-21360157
[Journal Article] Analysis of Drivability Enhancement Factors in Nanograting Metal-Oxide-Semiconductor Field- Effect Transistors2008
- Author(s)
  Xiaoli Zhu, S. Kuroki, K. Kotani, and T. Ito
- Journal Title
  
  Jpn. J. Appl. Phys 3046-3049
  
  Pages: 3046-3049
- NAID
  210000064666
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360152
[Journal Article] Analysis of Continuous-Wave Laser Lateral Crystallized Polycrystalline Silicon Thin Films with Large Tensile Strain2008
- Author(s)
  Shuntaro Fujii, Shin-Ichiro Kuroki, Xiaoli Zhu, Masayuki Numata, Koji Kotani, Takashi Ito
- Journal Title
  
  Jpn. J. Appl. Phys 47
  
  Pages: 3046-3049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19680022
[Journal Article] Analysis of Continuous-Wave Laser Crystallized Polycrystalline Silicon Films with Large Tensile Strain2008
- Author(s)
  S. Fujii, S. Kuroki, K. Kotani, and T. Ito
- Journal Title
  
  Jpn.J.Appl.Phys 47
  
  Pages: 3081-3085
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360152
[Journal Article] Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization2008
- Author(s)
  S. Fujii, S. Kuroki, K. Kotani, and T. Ito
- Journal Title
  
  ECS Transactions 16
  
  Pages: 145-151
- NAID
  120006581926
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360152
[Journal Article] Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization2008
- Author(s)
  S. Fujii, S. Kuroki, X. Zhu, M. Numata, K. Kotani, T. Ito
- Journal Title
  
  ECS Trans 16(9)
  
  Pages: 145-145
- NAID
  120006581926
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19680022
[Journal Article] Advantages of Nano-Grating Si Substrates in CMOS-FET Characteristics2007
- Author(s)
  Xiaoli Zhu, S. Kuroki, K. Kotani, and T. Ito
- Journal Title
  
  ECS Transactions 11
  
  Pages: 467-472
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360152
[Journal Article] Enlargement of Crystal Grains in Thin Silicon Films by Continuous-Wave Laser Irradiation2007
- Author(s)
  S. Fujii, S. Kuroki, K. Kotani, and T. Ito
- Journal Title
  
  Jpn. J. Appl. Phys 46
  
  Pages: 2501-2504
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360152
[Journal Article] Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability2007
- Author(s)
  Xiaoli Zhu, S. Kuroki, K. Kotani, and T. Ito
- Journal Title
  
  IEICE TRANS. ELECTRON E90-C
  
  Pages: 1830-1836
- NAID
  110007538948
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360152
[Patent] 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置2020
- Inventor(s)
  黒木伸一郎, 岡田智徳, 瀬崎洋
- Industrial Property Rights Holder
  黒木伸一郎, 岡田智徳, 瀬崎洋
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2020-026991
- Filing Date
  2020
- Data Source
  KAKENHI-PROJECT-17H03253
[Patent] 中性子検出素子2020
- Inventor(s)
  黒木伸一郎, 谷口学, 西垣内健汰, 目黒達也
- Industrial Property Rights Holder
  黒木伸一郎, 谷口学, 西垣内健汰, 目黒達也
- Industrial Property Rights Type
  特許
- Filing Date
  2020
- Data Source
  KAKENHI-PROJECT-20H00252
[Patent] 炭化珪素半導体装置及びその製造方法2016
- Inventor(s)
  黒木伸一郎、ミランダシルワ、石川誠治
- Industrial Property Rights Holder
  黒木伸一郎、ミランダシルワ、石川誠治
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-008954
- Filing Date
  2016-01-20
- Data Source
  KAKENHI-PROJECT-25420331
[Patent] マイクロ流路デバイス2009
- Inventor(s)
  黒木伸一郎、伊藤隆司
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2009-074999
- Filing Date
  2009-03-25
- Data Source
  KAKENHI-PROJECT-19680022
[Patent] シリコン酸化膜の堆積方法2007
- Inventor(s)
  伊藤隆司, 黒木伸一郎
- Industrial Property Rights Holder
  東北大学
- Industrial Property Number
  2007-293064
- Filing Date
  2007-11-12
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] [第2回シリコン系半導体エレクトロニクス若手奨励賞（名取研二若手奨励賞）[受賞記念講演] 耐放射線イメージセンサのための4H-SiC 画素センサの研究2025
- Author(s)
  堤将之、目黒達也、武山昭憲、大島武、田中保宣、黒木伸一郎
- Organizer
  2025年第72回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] 廃炉・宇宙開発のためのSiC CMOS集積回路・イメージセンサの研究開発2025
- Author(s)
  黒木伸一郎
- Organizer
  2025年第72回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] 埋め込み型フォトダイオードを有するSiCアクティブピクセルセンサへの4MGyガンマ線照射効果2025
- Author(s)
  谷川宗磨、目黒達也、武山昭憲、大島武、児島一聡、田中保宣、黒木伸一郎
- Organizer
  2025年第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] HE-HAXPESによるMetal/SiC及び絶縁膜/SiC界面の非破壊電子状態分析2025
- Author(s)
  安野聡、西原達平、Vuong Van Cuong、黒木伸一郎
- Organizer
  2025年第72回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] Switching Characteristics of Gate Driver Circuit Based on 4H-SiC MOSFETs at 500℃2024
- Author(s)
  V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki., and S.-I. Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] 500℃ Operation of Gate Driver Circuits Using 4H-SiC MOSFETs for High-Power Applications2024
- Author(s)
  Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Shin-Ichiro Kuroki
- Organizer
  International Workshop on Nanodevice Technologies 2024 (IWNT2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] Electrical Characteristics of N-Channel 4H-SiC MOSFET Under Positive-Bias Stress at 300℃ Ambient2024
- Author(s)
  V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki., and S.-I. Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] SiC CMOS Active Pixel Sensors with Embedded UV Photodiode2024
- Author(s)
  K. Tanigawa, T. Meguro, A. Takeyama, T. Ohshima, K. Kojima, Y. Tanaka, and S.-I Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] Dependence of Gate Oxide Thickness on High-Temperature Characteristics of 4H-SiC MOSFET2024
- Author(s)
  V. V. Cuong, S. Ishikawa, T. Maeda, H. Sezaki., and S.-I. Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] Selective wet-POA Process for 4H-SiC CMOS Image Sensors2024
- Author(s)
  Katsuki Hachimata, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Kazutoshi Kojima, Shin-Ichiro Kuroki
- Organizer
  International Workshop on Nanodevice Technologies 2024 (IWNT2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] 埋め込み型フォトダイオードを有するSiC CMOS アクティブピクセルセンサ2024
- Author(s)
  谷川宗磨，目黒達也，武山昭憲，大島武，児島一聡，田中保宣，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] Wet-POA処理による4H-SiC p-MOSFETのしきい値電圧特性2024
- Author(s)
  東駿翔, V. V. Cuong, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] Fabrication of the planer SiC gate-all-around JFET with channel dose modulation2024
- Author(s)
  T.Amemiya, M.Yamamoto, H.Umezawa, K.Nakayama, T.Kuroiwa, S.Kuroki and Y.Tanaka
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] Vth Reduction Characterization of Wet-POA treated 4H-SiC p MOSFET2024
- Author(s)
  S. Higashi, V.V. Cuong, S-I. Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] 4H-SiC上のNiおよびNi/Nbオーミックコンタクト微細構造の評価2024
- Author(s)
  Nguyen Anh Dung, Vuong Van Cuong, Shin-Ichiro Kuroki
- Organizer
  応用物理学会先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] High-Temperature Reliability of Ni/Ti/Nb Ohmic Contact on p-type 4H-SiC2024
- Author(s)
  Ha Thi Vu, Vuong Van Cuong, Shin-Ichiro Kuroki
- Organizer
  第85回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] 高出力アプリケーション向け4H-SiC MOSFETゲートドライバ回路の高温動作2024
- Author(s)
  ヴォーンヴァン　クオン, 目黒達也, 石川誠治, 前田知徳, 瀬崎洋, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] チャネルドーズ量調整を用いたプレーナー型SiC全周ゲート構造JFETの作製2024
- Author(s)
  雨宮貴紀、山本真幸、梅沢仁、中山浩二、黒岩丈晴、黒木伸一郎、田中保宣
- Organizer
  応用物理学会先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] 4H-SiC Active Pixel Sensorsへの3MGyガンマ線照射効果2024
- Author(s)
  八又勝己，目黒達也，武山昭憲，大島武，児島一聡，田中保宣，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第11回講演会
- Data Source
  KAKENHI-PROJECT-24H00035
[Presentation] SiC CMOS Integrated Circuits and Image Sensors for Extreme Environment Applications2023
- Author(s)
  Shin-Ichiro Kuroki, Toya Kai, Masayuki Tsutsumi, Tatsuya Meguro, Vuong Van Cuong, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima
- Organizer
  7th IEEE Electron Devices Technology and Manufacturing (IEEE EDTM2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Parameter Extraction from Transfer Characteristics Measurement of 4H-SiC MOSFET in Extremely High Temperature Ambient2022
- Author(s)
  Vuong Van Cuong, Tatusya Meguro, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS UVイメージセンサ画素デバイスの200℃高温動作2022
- Author(s)
  堤将之, 目黒達也, 武山昭憲, 大島武, 田中保宣, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Noise Margins and BTI Characteristics of 4H-SiC CMOS Circuits in High-Temperature Environment2022
- Author(s)
  Takuma Shima, Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Bipolar Characteristics of Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits2022
- Author(s)
  Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド極限環境用集積回路および画素デバイスの研究2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  電気学会電子デバイス研究会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用（第2期）」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Bias temperature stress instability in 4H-SiC capacitors with different metal gate in extremely high temperature environment2022
- Author(s)
  Vuong Van Cuong, Kaho Koyanagi, Tatusya Meguro, Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] High-Selective Deep RIE of 4H-SiC with SiO2 Hard Mask in Cl2/HBr/O2 Plasma Chemistry2022
- Author(s)
  Riku Takeuchi, Tadashi Sato, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC Extreme-Environment Electronics: From Nuclear Power Station to New Medical Applications2022
- Author(s)
  Shin-Ichiro Kuroki
- Organizer
  International Workshop on Nanodevice Technologies 2022, in Memory of M. Hirose (IWNT2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Output Characteristics of SOI-Si/4H-SiC Hybrid Pixel Device for Radiation Hardend CMOS Image Sensors2022
- Author(s)
  Tatsuya Meguro, Fumiaki Hasebe, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors2022
- Author(s)
  Kenta Nishigaito, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC半導体による極限環境エレクトロニクス構築2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  2022年電子情報通信学会総合大会シンポジウム「極限環境で動作する集積回路」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS UVイメージセンサ画素デバイスの200℃高温動作2022
- Author(s)
  堤将之、目黒達也、武山昭憲、大島武、田中保宣、黒木伸一郎
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 高線量ガンマ線照射した 4H-SiC JFET のしきい値電圧安定性2022
- Author(s)
  武山昭憲, 牧野高紘, 田中保宣, 黒木伸一郎, 大島武
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Effects of MOS charges on roll-off characteristics of 4H-SiC short channel n/p MOSFETs2022
- Author(s)
  Takuma Shima, Tomonori Maeda, Seiji Ishikawa, Hiroshi Sezaki, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Operating Characteristics of 4H-SiC 3T/4T- Active Pixel Sensors2022
- Author(s)
  Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohsima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS SRAM のノイズマージン評価2022
- Author(s)
  甲斐陶弥, 児島一聡, 大島武, 田中保宣, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Coverage Enhancement of Si-SOI/4H-SiC Wafer Direct Bonding by SiO2 insertion2022
- Author(s)
  Kazuya Kawamura, Tatsuya Meguro, Masayuki Tsutsumi, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC MOSFET 集積回路の高温動作とSiC/金属界面信頼性2022
- Author(s)
  黒木伸一郎, Vuong Van Cuong，志摩拓真，甲斐陶弥，目黒達也
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会　第９回個別討論会「高温動作集積回路開発の現状と課題」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Impact of conductivity type of vanadium doped 4H-SiC epilayer on semi-insulating characteristics2022
- Author(s)
  Kazutoshi Kojima Shinichiro Sato, Takeshi Ohshima and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC 半絶縁基板を用いた Well-less MOSFET の p/n channel 動作2022
- Author(s)
  甲斐陶弥、児島一聡、大島武、田中保宣、黒木伸一郎
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 耐放射線性炭化ケイ素半導体デバイスの開発2021
- Author(s)
  大島武, 武山昭憲、牧野高紘、黒木伸一郎、田中保宣
- Organizer
  2021年第82回応用物理学会秋季学術講演会シンポジウム「福島第1原発廃炉と福島復興　－応用物理学会の会員として，私たちに何ができるか－」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] エピタキシャル成長による4H-SiC CMOS Well形成2021
- Author(s)
  甲斐　陶弥 , 児島一聡, 志摩　拓真, 大島武, 田中保宣, 黒木　伸一郎
- Organizer
  応用物理学会・先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也，西垣内健汰，武山昭憲，牧野高紘，大島武，田中保宣
- Organizer
  応用物理学会・先進パワー半導体分科会第19回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド（SiC）極限環境エレクトロニクスの研究開発：原子炉廃炉対応から医療応用まで2021
- Author(s)
  黒木伸一郎, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  文部科学省共同利用・共同研究拠点生体医歯工学共同研究拠点　令和2年度成果報告会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也, 西垣内健汰, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 19 回研究会　「ワイドバンドギャップ半導体を用いた極限環境エレクトロニクス」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] エピタキシャル成長による n/p ウェル構造を用いた 4H-SiC CMOS インバータの特性評価2021
- Author(s)
  志摩拓真, 甲斐陶弥, 児島一聡, 田中保宣, 大島武, 黒木伸一郎
- Organizer
  応用物理学会・先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC極限環境エレクトロニクスの研究開発：原子炉廃炉対応から宇宙・医療応用まで2021
- Author(s)
  黒木伸一郎
- Organizer
  第二回　電子情報通信学会支部CoEシンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Improve High-Temperature Reliability at 500℃ of Ni/Nb/4H-SiC Ohmic Contact with CF4:O2 Surface Treatment2021
- Author(s)
  Cuong Van Vuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Tetsuya Meguro, Tadashi Sato, Shin-Ichiro Kuroki
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 耐放射線イメージセンサに向けたSOI-Si/4H-SiC画素プロセス2020
- Author(s)
  目黒達也，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響2020
- Author(s)
  武山昭憲，清水奎吾, 牧野高紘, 山崎雄一, 大島武, 黒木伸一郎, 田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC 短チャネル n/p MOSFETs における閾値の評価2020
- Author(s)
  志摩拓真，前田智徳，石川誠治，瀬崎洋，牧野高紘, 大島武, 黒木伸一郎
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC 半導体による極限環境エレクトロニクス構築2020
- Author(s)
  黒木伸一郎
- Organizer
  （公財）科学技術交流財団第 3 回「厳環境下 IoT 向け 3C-SiC 技術研究会」
- Invited
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] イオン注入角制御による 4H-SiC Trench MOSFETs のしきい値制御2019
- Author(s)
  岡田智徳, 井上純, 西山文隆, 瀬崎洋, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Thickness Dependences on Interfacial Properties of SiO2/BaO2 layers　on 4H-SiC (0001)2019
- Author(s)
  Kousuke Muraoka, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, and Shin-Ichiro Kuroki
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 耐放射線UVイメージセンサのためのフル4H-SiC画素デバイス2019
- Author(s)
  西垣内健汰、目黒達也、武山昭憲、大島武、田中保宣、黒木伸一郎
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Pixel Array Integration with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened image sensors2019
- Author(s)
  Tatsuya Meguro, Fumiaki Hasebe, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  The 4th International Symposium on Biomedical Engineering (ISBE2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] イオン注入角制御による4H-SiC基板へのイオン注入高精度化2019
- Author(s)
  岡田智徳、井上純、西山文隆、瀬崎洋、黒木伸一郎
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Thermal Reliability of 4H-SiC Devices and Integrated Circuits Based on 4H-SiC MOSFET at 400℃2019
- Author(s)
  Vuong Van Cuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Kousuke Muraoka, Tetsuya Meguro, and Shin-Ichiro Kuroki
- Organizer
  The 4th International Symposium on Biomedical Engineering (ISBE2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 耐放射線 UV イメージセンサのためのフル 4H-SiC 画素デバイス2019
- Author(s)
  西垣内健汰，目黒達也，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC による耐放射線エレクトロニクス技術開発2019
- Author(s)
  田中保宣，清水奎吾，小野田忍，武山昭憲，牧野高紘，大島武，目黒達也，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Suppression of Ion Channeling Effects in 4H-SiC Substrate by Tilt Angle Control of Ion Implantation2019
- Author(s)
  Tomonori Okada, Jun Inoue, Fumitaka Nishiyama, Hiroshi Sezaki, and Shin-Ichiro Kuroki
- Organizer
  The 4th International Symposium on Biomedical Engineering (ISBE2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] NVESTIGATION OF CF4:O2 SURFACE ETCHING IN Ni/Nb OHMIC CONTACT ON 4H-SiC FOR HARSH ENVIRONMENT ELECTRONICS2019
- Author(s)
  Abhinav Bhansali, Vuong Van Cuong, and Shin-Ichiro Kuroki
- Organizer
  応用物理学会先進パワー半導体分科会第14回研究会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Pixel Array Integration with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened image sensors2019
- Author(s)
  Tatsuya Meguro, Fumiaki Hasebe, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Pixel Device with UV Photodiode and MOSFETs for Radiation-Hardened UV Image Sensors2019
- Author(s)
  Kenta Nishigaito, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] ノーマリーオフ型4H-SiC JFETのガンマ線照射効果2019
- Author(s)
  武山昭憲、清水奎吾、牧野高紘、山﨑雄一、大島武、黒木伸一郎、田中保宣
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 耐放射線イメージセンサのための 4H-SiC/SOI 基板貼り合わせ技術2019
- Author(s)
  長谷部史明，目黒達也，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC CMOS論理回路作製に向けたBOSCHプロセスによるSiCディープエッチング2019
- Author(s)
  森本剣偲郎、村岡幸輔、児島一聡、黒木伸一郎
- Organizer
  2019年第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 耐放射線イメージセンサに向けた SOI-Si/4H-SiC 画素集積化プロセス2019
- Author(s)
  目黒達也，長谷部史明，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 耐放射線イメージセンサに向けたSOI-Si/4H-SiC画素集積化プロセス2019
- Author(s)
  目黒達也、長谷部史明、武山昭憲、大島武、田中保宣、黒木伸一郎
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Characterization of 4H-SiC MOS Capacitors with Different Metal Gates after 400°C High-Temperature Aging Tests2019
- Author(s)
  Vuong Van Cuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, and Shin-Ichiro Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Pixel Device for UV Image Sensors2019
- Author(s)
  Kenta Nishigaito, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Organizer
  The 4th International Symposium on Biomedical Engineering (ISBE2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Radiation hardness of 4H-SiC JFETs in MGy dose ranges,” The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)2019
- Author(s)
  A. Takeyama, K. Shimizu, T. Makino, Y. Yamazaki, S. Kuroki, Y. Tanaka, T. Ohshima
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC-NMOSFETs におけるガンマ線誘起移動度増加現象とその増加機構2019
- Author(s)
  村岡幸輔，瀬崎洋，石川誠治，前田知徳，牧野高紘，大島武，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] ノーマリーオフ型 4H-SiC JFET のガンマ線耐性2019
- Author(s)
  武山昭憲，清水奎吾，牧野高紘，山﨑雄一，大島武，黒木伸一郎，田中保宣
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 短チャネル SiC nMOSFET の温度特性評価2019
- Author(s)
  石井友康，瀬崎洋，石川誠治，前田智徳，牧野高紘，大島武, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] High Temperature Reliability of 4H-SiC Devices and Single Stage 4H-SiC MOSFET Amplifier at 400℃2019
- Author(s)
  Vuong Van Cuong, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Kousuke Muraoka, Tetsuya Meguro, and Shin-Ichiro Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Suppression of Ion Channeling Effects in 4H-SiC Substrate by Tilt Angle Control of Ion Implantation2019
- Author(s)
  Tomonori Okada, Jun Inoue, Fumitaka Nishiyama, Hiroshi Sezaki, and Shin-Ichiro Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Approach to realizing radiation-hardened devices2018
- Author(s)
  Shin-Ichiro Kuroki
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC極限環境エレクトロニクスと放射光による薄膜・界面状態分析2018
- Author(s)
  黒木伸一郎
- Organizer
  SPring-8次世代先端デバイス研究会（第6回）／第32回SPring-8先端利用技術ワークショップ
- Invited
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2018
- Author(s)
  Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Trench MOSFETs による短チャネル効果の抑制効果2018
- Author(s)
  石井友康、黒木伸一郎、瀬崎洋、石川誠治、前田智徳、牧野高紘、大島武、Mikael Ostling 、Carl-Mikael Zetterling
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2018
- Author(s)
  J. Inoue, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T Ohshima, M. Ostling, and C-M. Zetterling
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Short-channel 4H-SiC trench MOSFETs for harsh environment electronics2018
- Author(s)
  T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 極限環境応用に向けた4H-Si C上Ni /Nbオーミックコンタクトの高温信頼性2018
- Author(s)
  ヴォーンヴァンクォン、石川誠治、瀬崎洋、前田知徳、小金澤智之、安野聡、宮崎孝道、黒木伸一郎
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] Characterization of Ba-introduced thin gate oxide on 4H-SiC2018
- Author(s)
  K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, S.-I. Kuroki
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] （チュートリアル講演）パワーエレクトロニクスとワイドバンドギャップ半導体2018
- Author(s)
  黒木伸一郎
- Organizer
  薄膜材料デバイス研究会第１５回研究集会
- Invited
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 高周波CMOSインバータに向けた4H-Si CトレンチpMOSFETsの研究2018
- Author(s)
  井上純、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl -Mikael Zetterling
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2018
- Author(s)
  T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Radiation Hardened Silicon Carbide Electronics2018
- Author(s)
  K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, T. Makino, T. Ohshima, S.-I. Kuroki
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Effects of High Gamma-Ray Radiation on 3C-SiC nMOSFETs2018
- Author(s)
  Shin-Ichiro Kuroki, Kohei Nagano, Tatsuya Meguro, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, and Yasunori Tanaka
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC2018
- Author(s)
  Vuong Van Cuong, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Satoshi Yasuno, Tomoyuki Koganezawa, and Shin-Ichiro Kuroki
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC nMOSFETs における表面CF4エッチングの効果2018
- Author(s)
  小早川貴一、村岡幸輔、瀬崎洋、石川誠治、前田知徳、黒木伸一郎
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Research on 4H-SiC pMOSFETs with NbNi silicide2017
- Author(s)
  Jun Kajihara, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki,Takamaro Kikkawa, Takahiro Makino, Takeshi Oshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The 64th JSAP Spring Meeting
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2017
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2017
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC pMOSFETsの高温特性及びガンマ線曝露効果2017
- Author(s)
  梶原純, 黒木伸一郎, 瀬崎洋, 石川誠治，前田知徳, 牧野高紘, 大島武, Mikael Ostling, and Carl-Mikael Zetterling
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 極限環境エレクトロニクスのための4H-SiC nMOSFETs セルフアラインプロセス2017
- Author(s)
  黒瀬達也、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl -Mikael Zetterling
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] Electrical properties of Ti-Si-C Ohmic contact on ion-implanted n-type 4H-SiC C face2017
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC MOSFETs and Logic Inverters for Harsh Environment Electronics (Invited)2017
- Author(s)
  Shin-Ichiro Kuroki
- Organizer
  19th Takayanagi Kenjiro Memorial Symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Effects of CF4 surface etching on 4H-SiC MOS Capacitors2017
- Author(s)
  K. Kobayakawa, K. Muraoka, H. Sezaki, S. Ishikawa,T. Maeda, and S.-I. Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2017
- Author(s)
  J. Kajihara, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC MOSFETs and Logic Inverters for Harsh Environment Electronics2017
- Author(s)
  Shin-Ichiro Kuroki
- Organizer
  IEEE Sweden(IEEE米国電気電子学会スウェーデン支部）
- Place of Presentation
  Kista, Sweden
- Invited
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2017
- Author(s)
  J. Kajihara, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 高周波CMOSインバータに向けた4H-SiCトレンチpMOSFETsの研究2017
- Author(s)
  井上純、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Research on 400°C Thermal Stability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications2017
- Author(s)
  Vuong Van Cuong, Milantha De Silva, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Metal/SiO2/SiCバンドアライメントのゲート電極金属依存性2017
- Author(s)
  安野聡、小金澤智之、村岡幸輔、小早川貴一、石川誠治、黒木伸一郎
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Correlation between field effect mobility and accumulation conductance at 4H-SiC MOS interface with barium2017
- Author(s)
  K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, and S.-I. Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC MOSFETs and Logic Inverters for Harsh Environment Electronics2017
- Author(s)
  Shin-Ichiro Kuroki
- Organizer
  19th Takayanagi Kenjiro Memorial Symposium
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] Ti-Si-C Ohmic contact formation by laser annealing on n+ 4H-SiC C face2017
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Organizer
  The 64th JSAP Spring Meeting
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] Improvements of 4H-SiC MOS interface with barium2017
- Author(s)
  Kousuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takamaro Kikkawa, Shin-Ichiro Kuroki
- Organizer
  The 64th JSAP Spring Meeting
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 極限環境応用に向けた4H-SiC上Ni/Nbオーミックコンタクトの高温信頼性2017
- Author(s)
  ヴォーンヴァンクォン、石川誠治、瀬崎洋、前田知徳、小金澤智之、安野聡、宮崎孝道、黒木伸一郎
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 極限環境エレクトロニクスのための4H-SiC nMOSFETs セルフアラインプロセス2017
- Author(s)
  黒瀬達也、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Effects of surface etching with CF4 on 4H-SiC MOS Capacitors2017
- Author(s)
  Kiichi Kobayakawa, Kousuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda,Takamaro Kikkawa, Shin-Ichiro Kuroki
- Organizer
  The 64th JSAP Spring Meeting
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] NbNiシリサイドS/D 3C-SiC nMOSFETsと高ガンマ線照射特性2017
- Author(s)
  永野耕平、目黒達也、武山昭憲、牧野高紘、大島武、田中保宣、黒木伸一郎
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Correlation between field effect mobility and accumulation conductance at 4H-SiC MOS interface with barium2017
- Author(s)
  K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, and S.-I. Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Ba導入nMOSFETsに対するBTS試験およびガンマ線照射2017
- Author(s)
  村岡幸輔，瀬崎洋，石川誠治，前田知徳，牧野高紘，大島武，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC pMOSFETsの高温特性及びガンマ線曝露効果2017
- Author(s)
  梶原純, 黒木伸一郎, 瀬崎洋, 石川誠治，前田知徳, 牧野高紘, 大島武, Mi kael Ostling, and Carl -Mikael Zetterling
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] Electrical properties of Ti-Si-C Ohmic contact on ion-implanted n-type 4H-SiC C face2017
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, and Shin-Ichiro Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2016
- Author(s)
  S.-I. Kuroki, H. Nagatsuma, T. Kurose, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC nMOSFETによるPseudo-CMOS論理インバータの研究2016
- Author(s)
  長妻宏郁、黒木伸一郎、黒瀬達也、石川誠治、前田知徳、瀬崎洋、吉川公麿、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都・東工大大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 4H-SiC MOSFETs and Logic Inverters for Radiation-Hardened Electronics2016
- Author(s)
  Shin-Ichiro Kuroki, Hirofumi Nagatsuma, Tatsuya Kurose, Milantha De Silva, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Takahiro Makino, Takashi Ohshima, Mikael Ostling, and Carl-Mikael Zetterling
- Organizer
  International Workshop on Radiation Resistant Sensors and Related Technologies for Nuclear Power Plant Decommissioning (R2SRT2016)(廃炉に向けた耐放射線性センサー及び関連研究に関する国際ワークショップ)
- Place of Presentation
  福島県いわき市
- Year and Date
  2016-04-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC MOSFETs for power and harsh environment electronics2016
- Author(s)
  Shin-Ichiro. Kuroki, Hirofumi Nagatsuma, Milantha De Silva, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Takahiro Makino, Takashi Ohshima, Mikael Ostling, and Carl-Mikael Zetterling
- Organizer
  Annual World Congress of Smart Materials 2016-Develop New Path of Smartness
- Place of Presentation
  Singapore
- Year and Date
  2016-03-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using alkaline earth metal2016
- Author(s)
  K. Muraoka, H. Sezaki, S. Ishikawa, T. Maeda, T. Sato, T. Kikkawa and S-I. Kuroki
- Organizer
  11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] Low resistance Ni/Ti multilayer ohmic contact formation by Laser annealing on 4H-SiC C face2016
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Organizer
  The77th JSAP Autumn Meeting
- Place of Presentation
  新潟市朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] アルカリ土類金属によるSi及び4H-SiCの増殖酸化2016
- Author(s)
  村岡幸輔、瀬崎洋、石川誠治、前田智徳、吉川公麿、黒木伸一郎
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都・東工大大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 4H-SiC nMOSFETsによる論理インバータ回路の研究2016
- Author(s)
  黒瀬達也、黒木伸一郎、長妻宏郁、石川誠治、前田知徳、瀬崎洋、吉川公麿、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都・東工大大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] レーザアニールによる4H-SiC C面上のTi-Si-Cオーミックコンタクトの形成2016
- Author(s)
  ミランタデシルワ、川崎輝尚、吉川公麿、黒木伸一郎
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京都・東工大大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Low resistance Ti-Si-C ohmic contacts for 4H-SiC power devices using Laser annealing2016
- Author(s)
  Milantha De Silva, Teruhisa Kawasaki, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Organizer
  11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15KK0240
[Presentation] 4H-SiC MOSFETs and Logic Inverters for Radiation-Hardened Electronics2016
- Author(s)
  Shin-Ichiro Kuroki
- Organizer
  International Workshop on Radiation Resistant Sensors and Related Technologies for Nuclear Power Plant Decommissioning 2016 (R2SRT2016, 廃炉に向けた耐放射線センサー及び関連研究に関するワークショップ)
- Place of Presentation
  福島県・いわき市
- Year and Date
  2016-04-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] レーザアニールとカーボン侵入型金属による低抵抗SiCオーミック接触の形成2015
- Author(s)
  ミランタデシルワ、石川誠治、前田知徳、瀬崎洋、吉川公麿、黒木伸一郎
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市・名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide2015
- Author(s)
  Hirofumi Nagatsuma, Shin-Ichiro Kuroki, Milantha De Silva, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Mikael Ostling and Carl-Mikael Zetterling
- Organizer
  International Workshop on Nanodevice Technologies 2015
- Place of Presentation
  東広島市
- Year and Date
  2015-03-03
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Characterization of 4H-SiC nMOSFETs with As-doped S/D and NbNi Silicide Contacts After High Gamma-Ray Radiation2015
- Author(s)
  H. Nagatsuma, S-I. Kuroki, M. De Silva, S. Ishikawa, T. Maeda, H. Sezaki, T, Kikkawa, M. Ostling, and C.-M. Zetterling
- Organizer
  The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications(RASEDA2015、第11回宇宙用半導体素子放射線影響国際ワークショップ)
- Place of Presentation
  群馬県・桐生市桐生市・市民文化会館
- Year and Date
  2015-11-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] NbNiシリサイドコンタクト4H-SiC nMOSFETsの高ガンマ線照射後及び高温時の動作特性2015
- Author(s)
  長妻宏郁、黒木伸一郎、Milantha De Silva、石川誠治、前田知徳、瀬崎洋、吉川公麿、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  先進パワー半導体分科会　第2回講演会
- Place of Presentation
  大阪市・大阪国際交流センター
- Year and Date
  2015-11-09
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 極限環境4H-SiC MISFETsのためのAl2O3,Al6Si2O13ゲート絶縁膜の研究2015
- Author(s)
  赤瀬光、Milantha de Silva、長妻宏都、吉川公麿、黒木伸一郎
- Organizer
  2015年度応用物理・物理系学会中国四国支部合同学術講演会
- Place of Presentation
  徳島市・徳島大常三島キャンパス
- Year and Date
  2015-08-01
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 4H-SiC nMOSFETs with As-doped S/D and NbNi silicide ohmic contacts2015
- Author(s)
  H. Nagatsuma, S-I. Kuroki, M. De Silva, S. Ishikawa, T. Maeda, H. Sezaki, T, Kikkawa, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2015(ICSCRM2015, シリコンカーバイト及び関連材料に関する国際会議)
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 4H-SiC MISFETsのためのAl2O3,Al6Si2O13ゲート絶縁膜の研究2015
- Author(s)
  赤瀬光、石川誠治、前田知徳、瀬崎洋、Milantha de Silva、長妻宏都、吉川公麿、黒木伸一郎
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋市・名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Characterization of 4H-SiC nMOSFETs in Harsh Environments; High-Temperature and High Gamma-Ray Radiation2015
- Author(s)
  S-I. Kuroki, H. Nagatsuma, M. De Silva, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2015(ICSCRM2015, シリコンカーバイト及び関連材料に関する国際会議)
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Low Resistance Ohmic Contact Formation for SiC Schottky Barrier Diode2015
- Author(s)
  Milantha De Silva, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, and Takamaro Kikkawa
- Organizer
  International Workshop on Nanodevice Technologies 2015
- Place of Presentation
  東広島市
- Year and Date
  2015-03-03
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 炭素侵入型金属とレーザアニールを用いた4H-SiCパワーデバイスのための低抵抗オーミック抵抗の形成2015
- Author(s)
  Milantha De Silva、石川誠治、吉川公麿、黒木伸一郎
- Organizer
  先進パワー半導体分科会　第2回講演会
- Place of Presentation
  大阪市・大阪国際交流センター
- Year and Date
  2015-11-09
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Low resistance ohmic contact formation on 4H-SiC c-face with NbNi silicidation using nano-second laser annealing2015
- Author(s)
  Milantha De Silva, Seiji Ishikawa, Takamaro Kikkawa, and Shin-Ichiro Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2015(ICSCRM2015, シリコンカーバイト及び関連材料に関する国際会議)
- Place of Presentation
  Giardini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 4H-SiC MOSFETsによる極限環境エレクトロニクスへの展開2015
- Author(s)
  黒木伸一郎、長妻宏郁、Milantha De Silva, 石川誠治、前田知徳、瀬崎洋、吉川公麿、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  薄膜材料デバイス研究会第12回研究集会
- Place of Presentation
  京都市・龍谷大学響都ホール校友会館
- Year and Date
  2015-10-30
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Characterization of Poly-Si TFTs with Highly Bi-Axially Oriented Poly-Si Thin Films Using DLB Continuous-Wave Laser Lateral Crystallization2014
- Author(s)
  Shin-Ichiro Kuroki, Masayuki Yamano, Tadashi Sato, Nobuhiro Hata, Koji Kotani, and Takamaro Kikkawa
- Organizer
  2014 MRS Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] Characterization of Poly-Si TFTs with Highly Bi-Axially Oriented Poly-Si Thin Films Using DLB Continuous-Wave Laser Lateral Crystallization2014
- Author(s)
  Shin-Ichiro Kuroki, Masayuki Yamano, Tadashi Sato, Nobuhiro Hata, Koji Kotani, and Takamaro Kikkawa
- Organizer
  2014 MRS Spring Meeting
- Place of Presentation
  アメリカ・サンフランシスコ
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] TFTオフリーク電流低減のためのオゾンラジカル処理の研究2014
- Author(s)
  平田達誠，黒木伸一郎，山野真幸，佐藤旦，小谷光司，吉川公麿
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川）
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] ダブルラインビーム連続発振レーザラテラル結晶化による高性能poly-Si TFT2014
- Author(s)
  山野真幸，黒木伸一郎，佐藤旦，小谷光司，吉川公麿
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会（SDM）
- Place of Presentation
  沖縄青年会館（那覇市）
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] ダブルラインビーム連続発振レーザ結晶化を用いたpoly-Si TFTにおけるオフリーク電流特性2014
- Author(s)
  山野真幸，黒木伸一郎，佐藤旦，小谷光司，吉川公麿
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川）
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] Leakage Current Reduction of 4H-SiC Schottky Barrier Diode by Using Sacrificial Oxidation2014
- Author(s)
  Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa
- Organizer
  2014 MRS Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] High performance poly-Si Thin Film Transistor with One-dimensionally Long Si Grains Using DLB Continuous-wave Laser Lateral Crystallization2013
- Author(s)
  Masayuki Yamano, Shin-Ichiro Kuroki, Tadashi Sato, and Koji Kotani
- Organizer
  The proceedings of The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD13)
- Place of Presentation
  京都
- Year and Date
  2013-07-02
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] DLB-CLC poly-Si結晶化におけるレーザ照射オーバラップの効果2013
- Author(s)
  山野真幸，黒木伸一郎，佐藤旦，秦信宏, 小谷光司, 吉川公麿
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都）
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] 部分的アモルファス化によるn+ 4H-SiC上のNiシリサイド・オーミック抵抗のTLMパターン依存性2013
- Author(s)
  Milantha de Silva，黒木伸一郎, 佐藤　旦, 吉川　公麿
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Low Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC2013
- Author(s)
  Milantha de Silva, Tadashi Sato, Shin-Ichiro Kuroki and Takamaro Kikkawa
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
- Place of Presentation
  宮崎県宮崎市
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 3軸結晶配向巨大線状Si 結晶グレインを用いた高性能poly-Si 薄膜トランジスタ2013
- Author(s)
  山野真幸, 黒木伸一郎, 佐藤旦, 小谷光司
- Organizer
  薄膜材料デバイス研究会第10回研究集会
- Place of Presentation
  龍谷大学アバンティ響都ホール（京都）
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] High performance poly-Si Thin Film Transistor with One-dimensionally Long Si Grains Using DLB Continuous-wave Laser Lateral Crystallization2013
- Author(s)
  Masayuki Yamano, Shin-Ichiro Kuroki, Tadashi Sato, and Koji Kotani
- Organizer
  International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD13)
- Place of Presentation
  龍谷大学アバンティ響都ホール（京都）
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] ダブルラインビーム連続発振レーザラテラル結晶化によるシリコン薄膜の3軸結晶制御とTFT2012
- Author(s)
  黒木伸一郎
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  那覇市
- Invited
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] Bi-Axially Orientation-Controlled Si Thin Films on Glass Substrates by Double-Line Beam CW Laser Annealing2011
- Author(s)
  Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani, and Takashi Ito
- Organizer
  VIth Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Materials
- Place of Presentation
  Spain
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] Alignment of In-plane Crystallographic Grain Orientations in Polycrystalline Si Films by Normal and Oblique-Angle Ion-Implantations2011
- Author(s)
  Anri Nakajima, Shin-Ichiro Kuroki, Shuntaro Fujii, and Takashi Ito
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  名古屋
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] Crystal Growth of Highly Biaxially-Oriented Poly-Si Thin Films by W-Line Beam Continuous Wave Laser Lateral Crystallization2011
- Author(s)
  Shin-Ichiro Kuroki
- Organizer
  The 18th International Workshop on Active Matrix Flat Panel Displays and Devices(招待講演)
- Place of Presentation
  横浜
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] レーザラテラル結晶化Poly-Si TFTにおける膜中歪みの効果2011
- Author(s)
  黒木伸一郎,川崎雄也,藤井俊太朗,小谷光司,伊藤隆司
- Organizer
  第8回薄膜材料デバイス研究会資料
- Place of Presentation
  京都
- Year and Date
  2011-11-04
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] レーザラテラル結晶化Poly-Si TFTにおける膜中歪みの効果2011
- Author(s)
  黒木伸一郎
- Organizer
  薄膜材料デバイス研究会第8回研究集会
- Place of Presentation
  京都市
- Year and Date
  2011-11-04
- Data Source
  KAKENHI-PROJECT-23360144
[Presentation] Crystal Growth of Highly Biaxially-Oriented Poly-Si Thin Films by W-Line Beam Continuous-Wave Laser Lateral Crystallization2011
- Author(s)
  S.Kuroki
- Organizer
  The 18th International Workshop on Active Matrix Flat Panel Displays and Devices
- Place of Presentation
  東京工業大学ディジタル多目的ホール(招待講演)
- Year and Date
  2011-07-13
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] Strain-Induced Back Channel Electron Mobility Enhancement in Poly-Si TFTs Formed by Continuous-Wave Laser Lateral Crystallization2010
- Author(s)
  Suntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, and Takashi Ito
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Year and Date
  2010-09-30
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] One-dimensionally Long Silicon Grain Formation by Continuous-Wave Green Laser and Its Applications2010
- Author(s)
  Shin-Ichiro Kuroki, Shuntaro Fujii, Jiang Jun, Masaki Midorikawa, Koji Kotani, Takashi Ito
- Organizer
  International Thin-Film Transistor Conference 2010
- Place of Presentation
  姫路市
- Year and Date
  2010-01-28
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Enlargement of Crystal-Grains in Thin Silicon Films Using Continuous Wave Laser Irradiation2010
- Author(s)
  Suntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani, and Takashi Ito
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] ダブルラインビームCLCによる3軸配向性の高いPoly-Si薄膜形成2010
- Author(s)
  黒木伸一郎
- Organizer
  第7回薄膜材料デバイス研究会
- Place of Presentation
  奈良
- Year and Date
  2010-11-06
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] 高性能LTPS-TFT のためのDouble-Line-Beam CLC による高結晶配向Poly-Si 薄膜形成2010
- Author(s)
  黒木伸一郎
- Organizer
  電子情報通信学会SDM研究会
- Place of Presentation
  仙台
- Year and Date
  2010-10-22
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] 石英基板上に作製したVth可変ラテラル結晶化poly-Si TFT2010
- Author(s)
  藤井俊太朗,黒木伸一郎,小谷光司,伊藤隆司
- Organizer
  第57回応用物理学関係連合講演会講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] One-dimensionally Long Silicon Grain Formation by Continuous-Wave Green Laser and Its Applications2010
- Author(s)
  S.Kuroki
- Organizer
  International Thin-Film Transistor Conference 2010
- Place of Presentation
  イーグレ姫路、姫路市
- Year and Date
  2010-01-28
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] ダブルラインビームCLCによる3軸配向性の高いPoly Si薄膜形成2010
- Author(s)
  黒木伸一郎,川崎雄也,藤井俊太朗,小谷光司,伊藤隆司
- Organizer
  第7回薄膜材料デバイス研究会
- Place of Presentation
  奈良
- Year and Date
  2010-11-06
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] 高性能LTPS-TFTのためのDouble-Line-Beam CLCによる高結晶配向Poly-Si薄膜形成2010
- Author(s)
  黒木伸一郎,川崎雄也,藤井俊太朗,小谷光司,伊藤隆司
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  仙台
- Year and Date
  2010-10-22
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] One-dimensionally Long Silicon Grain Formation by Continuous-Wave Green Laser and Its Applications2010
- Author(s)
  S.Kuroki
- Organizer
  International Thin-Film Transistor Conference 2010
- Place of Presentation
  イーグレ姫路、姫路市
- Year and Date
  2010-01-28
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Continuous manipulation of micro particles by Use of dielectrophoresis using asymmetric electrodes array2010
- Author(s)
  Masaki Midorikawa, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito
- Organizer
  5th International Symposium on Medical, Bio- and Nano-Electronics
- Place of Presentation
  仙台市
- Year and Date
  2010-02-25
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate2009
- Author(s)
  Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, Takashi Ito
- Organizer
  the 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台市
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate2009
- Author(s)
  Shin-Ichiro Kuroki, Xiaoli Zhu, Koji Kotani, and Takashi Ito
- Organizer
  2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] Continuous Manipulation of Micro Particles by Use of Asymmetric Electrodes Array2009
- Author(s)
  Masaki Midorikawa, Shin-Ichiro Kuroki, Daiki Obara, K. Kotani, T. Ito
- Organizer
  the 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台市
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] CWレーザ多重回照射によるシリコン薄膜の(100)結晶は配向性向上2009
- Author(s)
  岩田英範, 藤井俊太朗、黒木伸一郎, 小谷光司, 伊藤隆司
- Organizer
  第56回応用物理学会関係連合講演会
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] CWレーザー多重回照射によるシリコン薄膜の(100)結晶配向性向上2009
- Author(s)
  岩田英範、黒木伸一郎、藤井俊太朗、小谷光司、伊藤隆司
- Organizer
  第56回応用物理学関係連合講演会講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] 非対称電極を用いたマイクロビーズの連続的操作2009
- Author(s)
  緑川真己、黒木伸一郎、小原大輝、小谷光司、伊藤隆司
- Organizer
  第56回応用物理学関係連合講演会講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Cap SiO2薄膜によるラテラル結晶化Poly-Si薄膜のラフネス低減2009
- Author(s)
  藤井俊太朗、黒木伸一郎、岩田英範、沼田雅之、小谷光司、伊藤隆司
- Organizer
  第56回応用物理学関係連合講演会講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Highly-(001)-Oriented Ferroelectric PZT Thin Films on Glass by CW Green-Laser Crystallization2009
- Author(s)
  Jun Jiang, Shin-Ichiro Kuroki, Koji Kotani, Takashi Ito
- Organizer
  the 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台市
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate2009
- Author(s)
  S.Kuroki
- Organizer
  The 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台国際ホテル、仙台市
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Cap SiO2薄膜によるラテラル結晶化Poly-Si薄膜のラフネス低減2009
- Author(s)
  藤井俊太朗、黒木伸一郎, 小谷光司, 伊藤隆司
- Organizer
  第56回応用物理学会関係連合講演会
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] CLC poly-Si TFTのキャリア輸送メカニズムの解析2009
- Author(s)
  藤井俊太朗、黒木伸一郎, 小谷光司, 伊藤隆司
- Organizer
  第69回応用物理学会学術講演会
- Year and Date
  2009-09-02
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] The Drivability Enhancement of Poly-Si TFTs by use of Nanograting Substrate2009
- Author(s)
  S.Kuroki
- Organizer
  The 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台国際ホテル、仙台市
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21360157
[Presentation] エタノール添加スラリーを用いたCWレーザ結晶化Si薄膜のCMP2008
- Author(s)
  黒木伸一郎
- Organizer
  薄膜材料デバイス研究会第5回研究集会
- Place of Presentation
  なら100年会館、奈良市
- Year and Date
  2008-10-31
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] Carrier Transport Mechanism in Poly-Si TFTs with One-Dimensionaly Long Grains2008
- Author(s)
  S. Fujii, S. Kuroki, K. Kotani, and T. Ito
- Organizer
  The 2008 International Conference on Solid State Devices and Materials
- Year and Date
  2008-09-13
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] エタノール添加CMPによるCWレーザ結晶化Si薄膜の平坦化2008
- Author(s)
  雅之、黒木伸一郎、藤井俊太朗、小谷光司、伊藤隆司
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  船橋市
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Research on Poly-Si TFTs with One-dimensionally long grains formed by CW laser lateral crystallization2008
- Author(s)
  Xiaoli Zhu, S. Kuroki, K. Kotani, and T. Ito
- Organizer
  SOIM-GCOE08
- Year and Date
  2008-10-16
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] Roughness Reduction Technique for High Performance Poly-Si TFTs by CW Laser Lateral Crystallization with Cap SiO2 Thin Films2008
- Author(s)
  S. Fujii, S. Kuroki, M. Numata, K. Kotani, T. Ito
- Organizer
  the 2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  つくば市
- Year and Date
  2008-09-13
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Carrier Transport Mechanism in Poly-Si TFTs with One-Dimensionally Long Grains2008
- Author(s)
  S. Fujii, S. Kuroki, X. Zhu, M. Numata, K. Kotani, T. Ito
- Organizer
  the 2008 International Conference on Solid State Devices and Materials
- Place of Presentation
  つくば市
- Year and Date
  2008-09-13
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystalli- zation2008
- Author(s)
  S. Fujii, S. Kuroki, K. Kotani, andT. Ito
- Organizer
  214^<th>ECS Meeting
- Year and Date
  2008-10-13
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] CLC poly-Si TFTの電界効果電子移動度2008
- Author(s)
  藤井俊太朗、黒木伸一郎、朱小莉、田主裕一朗、小谷光司、伊藤隆司
- Organizer
  第55回応用物理学関係連合講演会講演会
- Place of Presentation
  船橋市
- Year and Date
  2008-03-28
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Research on High Performance Poly-Si TFTs with One-dimensionally long grain and reduced surface roughness2008
- Author(s)
  S. Fujii, S. Kuroki, K. Kotani, and T. Ito
- Organizer
  SOIM-GCOE08
- Year and Date
  2008-10-16
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] エタノール添加スラリーを用いたCWレーザ結晶化Si薄膜のCMP2008
- Author(s)
  黒木伸一郎, 沼田雅之, 藤井俊太朗, 小谷光司, 伊藤隆司
- Organizer
  薄膜材料デバイス研究会第5回研究集会
- Year and Date
  2008-10-31
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] エタノール添加スラリーを用いたCMPによるCWレーザ結晶化Si薄膜の平坦化2008
- Author(s)
  沼田雅之、黒木伸一郎、藤井俊太朗、小谷光司、伊藤隆司
- Organizer
  電子情報通信学会SDM研究会
- Place of Presentation
  仙台市
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] CLC poly-Si TFTのキャリア輸送メカニズムの解析2008
- Author(s)
  藤井俊太朗、黒木伸一郎、朱小莉、沼田雅之、小谷光司、伊藤隆司
- Organizer
  第69回応用物理学会学術講演会講演会
- Place of Presentation
  春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] エタノール添加スラリーを用いたCWレーザ結晶化Si薄膜のCMP2008
- Author(s)
  黒木伸一郎、沼田雅之、藤井俊太朗、小谷光司、伊藤隆司
- Organizer
  薄膜材料デバイス研究会第5回研究集会
- Place of Presentation
  奈良市
- Year and Date
  2008-10-31
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] エタノール添加スラリーを用いたCMPによるCWレーザ結晶化Si薄膜の平坦化2008
- Author(s)
  沼田雅之, 藤井俊太朗、黒木伸一郎, 小谷光司, 伊藤隆司
- Organizer
  電子情報通信学会SDM研究会
- Year and Date
  2008-10-09
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] Roughness Reduction Technique for High Performance Poly-Si TFTs by CW Laser Lateral Crystallization with Cap SiO_2 Thin Films2008
- Author(s)
  S. Fujii, S. Kuroki, K. Kotani, and T. Ito
- Organizer
  The 2008 International Conference on Solid State Devices and Materials
- Year and Date
  2008-09-12
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] 連続波グリーンレーザ再結晶化Si薄膜における結晶性と歪み2007
- Author(s)
  黒木伸一郎、藤井俊太朗、朱小莉、沼田雅之、小谷光司、伊藤隆司
- Organizer
  薄膜材料デバイス研究会第4回研究集会
- Place of Presentation
  京都市
- Year and Date
  2007-11-02
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] 連続波グリーンレーザ再結晶化Si薄膜における結晶性と歪み2007
- Author(s)
  黒木伸一郎
- Organizer
  薄膜材料デバイス研究会第4回研究集会
- Place of Presentation
  龍谷大学
- Year and Date
  2007-11-02
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] 連続波レーザ結晶化Si薄膜のCMP研磨特性2007
- Author(s)
  沼田雅之, 藤井俊太朗、黒木伸一郎, 小谷光司, 伊藤隆司
- Organizer
  第68回応用物理学会学術講演会
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] ラテラル結晶化Si薄膜におけるイオンチャネリング効果と固相結晶化2007
- Author(s)
  藤井俊太朗、黒木伸一郎, 小谷光司, 伊藤隆司
- Organizer
  第68回応用物理学会学術講演会
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] 連続波グリーンレーザ再結晶化Si薄膜における結晶性と歪み2007
- Author(s)
  黒木伸一郎, 藤井俊太朗, 小谷光司, 伊藤隆司
- Organizer
  薄膜材料デバイス研究会第4回研究集会
- Year and Date
  2007-11-02
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] The Drivability Enhancement Mechanisms in Nano-grating MOSFETs2007
- Author(s)
  Xiaoli Zhu, S. Kuroki, K. Kotani, and T. Ito
- Organizer
  International Conference on Solid State Devices and Materials
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] 連続波グリーンレーザ再結晶化Si薄膜における結晶性と歪み2007
- Author(s)
  黒木伸一郎
- Organizer
  薄膜材料デバイス研究会第4回研究集会
- Place of Presentation
  龍谷大学
- Year and Date
  2007-11-02
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] Lateral Recrystallized Si Thin Films with Large Tensile Strain for High Performance Thin Film Transistors2007
- Author(s)
  S. Fujii, S. Kuroki, K. Kotani, and T. Ito
- Organizer
  International Conference on Solid State Devices and Materials
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] Lateral Recrystallized Si Thin Films with Large Tensile Strain for High Performance Thin Film Transistors2007
- Author(s)
  S. Fujii, S. Kuroki, Z. Xiaoli, M. Numata, K. Kotani, T. Ito
- Organizer
  the 2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  つくば市
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19680022
[Presentation] Research on High-performance Nano-grating Si TFTs2007
- Author(s)
  Xiaoli Zhu, S. Kuroki, K. Kotani, and T. Ito
- Organizer
  The 1st Inter- national Symposium on Information Electronics Systems
- Year and Date
  2007-11-27
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] Advantages of Nano-Grating Si Substrates in CMOS-FET Characteristics2007
- Author(s)
  Xiaoli Zhu, S. Kuroki, K. Kotani, and T. Ito
- Organizer
  212th ECS Meeting
- Year and Date
  2007-10-12
- Data Source
  KAKENHI-PROJECT-19360152
[Presentation] 4H-SiCドライ熱酸化膜への疎水化処理の効果
- Author(s)
  佐藤　旦，黒木伸一郎，石川誠治, 前田知徳, 瀬崎　洋, 吉川公麿
- Organizer
  応用物理学会先端パワー半導体分科会第一回講演会
- Place of Presentation
  名古屋市
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Leakage Current Reduction of 4H-SiC Schottky Barrier Diode by Using Sacrificial Oxidation
- Author(s)
  Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, and Takamaro Kikkawa
- Organizer
  2014 MRS Spring Meeting
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2014-04-21 – 2014-04-25
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] 部分的アモルファス化によりオーミック抵抗の低減とSBD特性評価
- Author(s)
  Milantha De Silva，黒木伸一郎，石川誠治, 前田知徳, 瀬崎　洋, 吉川公麿
- Organizer
  応用物理学会先端パワー半導体分科会第一回講演会
- Place of Presentation
  名古屋市
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-25420331
[Presentation] Nb/Niシリサイドによる４H-SiCオーミックコンタクト電極の研究
- Author(s)
  長妻宏郁，黒木伸一郎，MILANTHA DE SILVA，赤瀬光, 古林寛, 石川誠治，前田知徳, 瀬崎洋,　吉川公麿
- Organizer
  応用物理学会先端パワー半導体分科会第一回講演会
- Place of Presentation
  名古屋市
- Year and Date
  2014-11-19 – 2014-11-20
- Data Source
  KAKENHI-PROJECT-25420331

1. Ohshima Takeshi (50354949)

# of Collaborated Projects: 4 results

# of Collaborated Products: 75 results
2. ITO Takashi (20374952)

# of Collaborated Projects: 3 results

# of Collaborated Products: 40 results
3. KOTANI Koji (20250699)

# of Collaborated Projects: 3 results

# of Collaborated Products: 34 results
4. 牧野高紘 (80549668)

# of Collaborated Projects: 3 results

# of Collaborated Products: 39 results
5. 田中保宣 (20357453)

# of Collaborated Projects: 2 results

# of Collaborated Products: 35 results
6. 児島一聡 (40371041)

# of Collaborated Projects: 2 results

# of Collaborated Products: 16 results
7. 武山昭憲 (50370424)

# of Collaborated Projects: 2 results

# of Collaborated Products: 26 results
8. NAKAJIMA Anri (70304459)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. Kikkawa Takamaro (60304458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 小出哲士 (30243596)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 有廣光司 (70232064)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 波多野睦子 (00417007)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. Zetterling Carl-Mikael

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
14. Östling Mikael

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kuroki Shin-Ichiro 黒木 伸一郎

KUROKI Shin-ichiro 黒木 伸一郎

Research Projects

Research Products

Co-Researchers

人類のフロンティア拡大を支えるSiC極限環境エレクトロニクスの確立Principal Investigator

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Research on SiC Extreme-Envionment Electronics for Exploring Human's New FrontiersPrincipal Investigator

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Research on Silicon-Carbide IoT Platform for Harsh Environment ApplicationsPrincipal Investigator

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Quantum state control with advanced optical technique for spin defects in silicon carbide

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Research on Silicon Carbide Harsh Environment ElectronicsPrincipal Investigator

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Research on Radiation-Hardened CMOS Integrated Circuits using Wide Bandgap SiC Semiconductor(Fostering Joint International Research)Principal Investigator

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Research on the measurement technology of breast tumor angiogenesis

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High radiation resistant CMOS integrated circuits using Wide-Band Gap SiC SemiconductorPrincipal Investigator

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Green LSI Technology Using High-Performance TFT Fabricated by Area-Selective Processing

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Orientation-Aligned Si Nano-wires Formed by Multiple-Channeling Ion-Implantation

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Control of 3D-Crystallization of Silicon Films on Insulating Substrates and Its Application to Thin Film Transistors

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半導体デバイスの超微細化に向けた革新的な高濃度極浅接合形成技術の創出

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Basic Research on TFT Active-Matrix Artificial KidneyPrincipal Investigator

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Kuroki Shin-Ichiro 黒木伸一郎

KUROKI Shin-ichiro 黒木伸一郎