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YOSHIDA Masayuki  吉田 正幸

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… Alternative Names

YOSHIDA MASAYUKI  吉田 正幸

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Researcher Number 80038984
External Links
Affiliation (based on the past Project Information) *help 1998 – 2000: 吉田半導体研究所, 所長
1995: KYUSHU INSTITUTE OF DESIGN,PROFESSOR, 教授
1995: 福岡工業大学, 工学部, 教授
1994: 九州芸術工科大学, 教授
1987: 九州芸術工科大学, 共同専門教室, 教授
1986: PROFESSOR, KYUSHU INSTITUTE OF DESIGN, 共通専門教室, 教授
Review Section/Research Field
Except Principal Investigator
電子デバイス・機器工学 / Applied materials
Keywords
Except Principal Investigator
シリコン / 結晶欠陥 / 半導体 / Dislocations / Crystal Defects / Semiconductor / <II> - <VI> compounds / Gallium Arsenide / Germanium / Silicon … More / 不純物 / 転位 / II-VI化合物 / ガリウム砒素 / ゲルマニウム / process simulation / impurity diffusion / spreading resistance / carrier concentration / active layer / buried oxide / ultra thin SOI / silicon LSI / 埋込酸化膜 / シミュレーションモデル / 低消費電力LSI / LSI / 格子間Si / シュミレーションモデル / SOI / プロセスシミュレータ / プロセスシミュレーション / 不純物拡散 / 拡がり抵抗法 / キャリア濃度 / 活性層 / 埋込み酸化膜 / 極薄SOI / シリコンLSI / elemental boron source / rapid thermal diffusion / modeling of dopant profiles / ultra-shallow junctions / silicon / diffusion of boron / プロセスモデリング / ド-ピング / 元素ボロン拡散源 / 急速熱拡散 / ドーパント分布のモデリング / 極浅接合 / ボロン拡散 / IIIーV族半導体 / IV族半導体 / 欠陥物性 Less
  • Research Projects

    (4 results)
  • Co-Researchers

    (11 People)
  •  Modeling of Impurity Diffusion in SOI Substrates for Future LSIs

    • Principal Investigator
      ARAI Eisuke
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Nagoya Institute of Technology
  •  FORMATION OF ULTRA-SHALLOW PN-JUNCTIONS AND MODELING OF DOPANT PROFILES

    • Principal Investigator
      KUWANO Hiroshi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      KEIO UNIVERSITY
  •  半導体の結晶欠陥物性の制御とその応用

    • Principal Investigator
      SUMINO KOJI
    • Project Period (FY)
      1987
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Tohoku University
  •  PHYSICS OF CRYSTAL DEFECTS IN SEMICONDUCTORS

    • Principal Investigator
      SUMINO KOJI
    • Project Period (FY)
      1985 – 1986
    • Research Category
      Grant-in-Aid for Co-operative Research (A)
    • Research Field
      Applied materials
    • Research Institution
      TOHOKU UNIVERSITY
  • 1.  SUMINO KOJI (50005849)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 2.  NANNICHI YASUO (10133026)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 3.  UMENO MASATAKA (50029071)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  MIKOSHIBA NOBUO (70006279)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 5.  TAKEUCHI SHIN (60013512)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  KUWANO Hiroshi (10051525)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  MATSUMOTO Satoru (00101999)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  ARAI Eisuke (90283473)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  UCHIDA Hideo (10293739)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 10.  SHAO Chunlin (20242828)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  ICHIMURA Masaya (30203110)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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