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NARITSUKA SHIGEYA  成塚 重弥

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NARITSUKA Shigeya  成塚 重弥

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Researcher Number 80282680
Other IDs
Affiliation (Current) 2025: 名城大学, 理工学部, 研究員
Affiliation (based on the past Project Information) *help 2024: 名城大学, 理工学部, 教授
2004 – 2022: 名城大学, 理工学部, 教授
2000 – 2003: 名城大学, 理工学部, 助教授
1999: GRADUATE SCHOOL OF ENGINEERING, UNIVERSITY OF TOKYO, LECTURER, 大学院・工学系研究科, 講師
1996 – 1998: 東京大学, 大学院・工学系研究科, 助手
1996: 東京大学, 大学院工学系研究科, 助手
Review Section/Research Field
Principal Investigator
Crystal engineering / Electronic materials/Electric materials / Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Electronic materials/Electric materials / 電子デバイス・機器工学
Except Principal Investigator
Applied materials science/Crystal engineering / Electronic materials/Electric materials / 電子デバイス・機器工学 / Basic Section 28030:Nanomaterials-related … More / Basic Section 21050:Electric and electronic materials-related / Engineering / Science and Engineering / Science and Engineering / Nanomaterials chemistry / Nanomaterials/Nanobioscience / Applied materials science/Crystal engineering Less
Keywords
Principal Investigator
マイクロチャンネルエピタキシー / 窒化ガリウム / 横方向成長 / シリコン / 電気・電子材料 / Si / グラフェン / ヘテロエピタキシャル成長 / リモートエピタキシー / 転位低減 … More / 転位低減化 / グラフェンマスク / 超高速情報処理 / 電子デバイス・機器 / 結晶成長 / MBE,エピタキシャル / 選択成長 / 有機金属分子線成長 / 格子欠陥 / MBEエピタキシャル / 光・電子集積回路 / 分子線エピタキシ / マイクロチャンネルエピタキシ / ヘテロエピタキシー / GaAs / 半導体 / 高温アルコールCVD / MBE / 減圧マイクロプラズマ処理 / 無転位テンプレート基板 / グラフェン減圧CVD / グラフェン析出法 / グラフェンの直接成長 / CBE / Ⅲ-Ⅴ on Si / 応力低減 / マイクロプラズマ / 化学ビームエピタキシー / Molecular beam epitaxy / Si substrate / Droplet epitaxy / GaN dot / Si thermal oxide / STM lithography / Scanning tunnel microscopy / Nanochannel epitaxy / 有限要素法 / 残留応力 / 自然酸化膜 / GaNマスク / GaAs基板 / 分子線結晶成長(MBE) / ビーム誘起横方向成長(BILE) / STMソグラフィー / 走査型トンネル顕微鏡(STM) / ナノチャンネルエピタキシー(NCE) / 面間拡散 / STMリソグラフィー / 走査トンネル顕微鏡 / 分子線結晶成長 / Si基板 / 液滴エピタキシー / GaNドット / Si熱酸化膜 / STMリングラフィー / 走査型トンネル顕微鏡 / ナノチャンネルエピタキシー / oxygen impurity / OEIC / long lifetime laser diode / VCSEL / microchannel epitaxy / dislocation-free / hetero-epitaxy / 反応性イオンエッチング / 液相エピタキシ / マイクロチャネルエピタキシ / 面発光ダイオード / 屈折率導波構造 / AlGaAs高純度化 / 面発光レーザーダイオード / Si基板上のGaAsエピタキシ / 電流酸化狭窄構造 / 酸化ブロック構造 / 分子線エピタキシ(MBE) / 面発光レーザダイオード / Si基板上のGaAsエピタキシー / 酸素不純物 / 長寿命レーザー / 面発光レーザー / 無転位化 / 回転撹拌 / 縦方向成長抑制 / テンプレート基板 / メサ加工基板 / 回転攪拌 / 流速支援 / 液相成長 / 高速情報処理 / 集積回路 / MBE、エピタキシャル / 低角入射マイクロチャンネルエピタキシー / 発光素子 / パターン成長 / 太陽電池 / 温度勾配 / 温度差LPE成長 / チャンネル成長法(CGE) / らせん転位 / Ge / 液相成長(LPE) / ステップ源 / 反位相領域(APD) / 回転双晶 / メサ型リッジ / ステップフリーエピタキシー / 非発光センター / 不純物混入 / 無転位結晶 / ヘテロエピタキシ / 光・電子集積化回路 / 光学デバイス / 残留応力低減 / 転位密度低減 / 格子不整合の大きな系の成長 … More
Except Principal Investigator
GaAs / MnAs / GaMnAs / GaSb / カーボンナノチューブ / 磁気光学効果 / MBE / グラフェン / SiC / 分子線エピタキシ / optical isolator / magneto-optical effect / 光アイソレータ / μ-RHEED / 磁性半導体 / GaAs : Mn / 分子線エピタキシー / heteroepitaxy / シリコン(Si) / Bridgman growth / microgravity / ブリッジマン成長 / 半導体 / 面間拡散 / オペランド測定 / CVD / 触媒 / EXAFS / XAFS / ガリウムヒ素系半導体 / 相関測定 / 分光エリプソメトリー法 / ビーム品質 / コンタクト比抵抗 / SCOWA / モードロック / 半導体増幅器 / 斜め導波路 / 半導体レーザ / バイセクション構造 / 無反射コート / GaAs系半導体 / 超短パルス / granular structure / tunneling magneto-resistance (TMR) / magnetic tunnel junction / magnetic semiconductor / テンプレート法 / MnGa / 量子へテロ構造 / 半導体ハイブリッド系材料 / ErAs / 半導体ハイブリッド材料 / 磁性体 / グラニュラー構造 / トンネル磁気抵抗効果 / 強磁性トンネル接合 / semiconductor-waveguide-type optical isolator / transverse magneto-optical Kerr effect / DBR (Distributed Bragg Reflector) / Faraday effect / s,p-d交換相互作用 / 半導体磁気光学結晶 / (InGaMn)As / (GaMn)As / III-V族ベース強磁性半導体 / 光の局在 / グラニュラー / 磁気光学結晶 / 導波路型光アイソレータ / 横磁気カー効果 / DBR / ファラデー効果 / liquid phase epitaxy(LPE) / molecular beam epitaxy(MBE) / dislocation-free crystal / vertical-cavity surface-emitting laser diode / sillicon(Si) / galliumarsenide(GaAs) / microchannel epitaxy(MCE) / 面発光レーザ / Si / マイクロチャネルエピタキシ / 液相エピタキシ / 無転位結晶 / 面発光レーザー / 砒化ガリウム(GaAs) / ヘテロエピタキシ / マイクロチャンネルエピタキシ / impurity distribution / Mrangoni flow / dislocation density / X-ray topograph / strain free growth / 不純物分布 / マランゴニ対流 / 転位密度 / X線トポグラフ / 無歪成長 / マイクログラビティ / AィイD2s2ィエD2 molecules / macro-step / pyramid structure / surface diffusion / intersurface diffusion / molecular beam epitaxy / As_4分子 / 巨大ステップ / ピラミッド構造 / 拡散距離 / ferromagnetic semiconductor GaMnAs / ferromagnmet-semiconductor heterostructures / molecular beam epitaxy (MBE) / ferromagnet hybrid materials system / III-V-semiconductor / Si substrates / 磁気異方性 / 低温MBE / 希薄磁性半導体 / エピタキシャル強磁性薄膜 / 磁性体融合体 / 量子準位 / 磁性半導体超格子 / p-d交換相互作用 / キャリア誘起強磁性 / 異常ホール効果 / MnAS / 磁気結合 / スピンバルブ / MnAs 三層構造 / GaAs:Mn / 磁性体融合系 / III-V半導体 / laser diode / release of residual stress / Opto-electronic Integrated circuit (OEIC) / dislocation-free region / epitaxial lateral overgrowth (ELO) / Indiumphosphide (InP) / silicon (Si) / VME(Vapour Mixing Epitaxy) / MQW構造 / Si基板 / インジウム燐(InP) / 空間分解フォトルミネッセンス測定 / ヘテロエピタキシャル成長 / 空間分解フォトルミネッセンス法 / 有限要素法 / 横方向成長法(ELO) / ELO比 / 液相エピタキシャル法(LPE) / レーザーダイオード / 残留応力低減 / 光・電子集積回路(OEIC) / 無転位領域 / 横方向成長(ELO) / 燐化インジウム(InP) / ヘテロエピタキシ- / Te impurity / melt growth / GAS program / Space Shuttle / space experiment / ブリッジマン成長、 / 融液成長、 / GaSb、 / GASプログラム、 / スペースシャトル、 / 宇宙実験、 / Te不純物 / 融液成長 / GASプログラム / スペースシャトル / 宇宙実験 / 微小重力 / 電子線励起電流 / 電子線励起深紫外レーザ / ソーラーブラインド紫外線検出器 / バルクAlN / ナノカーボン電極 / 分極半導体 / 低加速電圧SEM / 分極電荷エンジニアリング / 電子線ホログラフィ / バルクAlN基板 / 深紫外発光素子 / ナノワイヤ / 深紫外 / 分極ドーピング / 熱処理 / ナノカーボン / 結晶成長その場観察 / AlGaN / AlN / 電気・電子材料 / スピンエレクトロニクス / 先端機能デバイス / エピタキシャル / 結晶成長 / 超伝導体 / 電子・光機能 / 薄膜 / エピタキシャル成長 / 酸化物エレクトロニクス / スピントロニクス / 結晶工学 / 過飽和度 / 液相エピタキシャル成長 / Ga / 液相成長法 / ガリウム / LPE法 / X線吸収分光 / 表面・界面 / 電気的特性 / 表面分解法 / X 線吸収分光 / 光電子分光 / ヘテロ接合 / 走査トンネル顕微鏡 / 触媒化学気相成長法 / ガスソース成長法 / 紫外線 / ガスソース成長 / ラマン分光 / 光励起 / 低温成長 / Si基板上の化合物半導体 / 絶縁膜上半導体薄膜 / Si基盤上の化合物半導体 / 絶縁膜上半導体 / 選択成長 / 横方向成長 / 低角入射分子線 Less
  • Research Projects

    (25 results)
  • Research Products

    (715 results)
  • Co-Researchers

    (43 People)
  •  Improvement of hetero epitaxial growth using graphenePrincipal Investigator

    • Principal Investigator
      成塚 重弥
    • Project Period (FY)
      2024 – 2028
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Meijo University
  •  Study on ultrashort pulsed semiconductor laser diodes for fluorescent bio-imaging

    • Principal Investigator
      Miyajima Takao
    • Project Period (FY)
      2019 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Meijo University
  •  Operando EXAFS study on growth mechanism of carbon nanotube

    • Principal Investigator
      MARUYAMA TAKAHIRO
    • Project Period (FY)
      2019 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 28030:Nanomaterials-related
    • Research Institution
      Meijo University
  •  Basic research for realization of heteroepitaxial growth platformPrincipal Investigator

    • Principal Investigator
      Naritsuka Shigeya
    • Project Period (FY)
      2015 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Meijo University
  •  Invention of 3D Active sites in Advanced Semiconductors and Functional Materials

    • Principal Investigator
      Fukumura Tomoteru
    • Project Period (FY)
      2014 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Tohoku University
      The University of Tokyo
  •  Growth of GaN template substrate by flow-assisted-mode liquid phase epitaxyPrincipal Investigator

    • Principal Investigator
      Naritsuka Shigeya
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Meijo University
  •  Fabrication of high-quality graphene by liquid phase epitaxial growth

    • Principal Investigator
      Maruyama Takahiro
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Nanomaterials chemistry
    • Research Institution
      Meijo University
  •  Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices

    • Principal Investigator
      AMANO Hiroshi
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
      Engineering
    • Research Institution
      Nagoya University
  •  Approach from crystal growth to overcome limits of Si integrated circuitsPrincipal Investigator

    • Principal Investigator
      NARITSUKA Shigeya
    • Project Period (FY)
      2010 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Meijo University
  •  Fabrication and property of CNT/SiC heterojunction formed by surface decomposition of SiC

    • Principal Investigator
      MARUYAMA Takahiro
    • Project Period (FY)
      2009 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Nanomaterials/Nanobioscience
    • Research Institution
      Meijo University
  •  Growth of dislocation-free GaN on Si substrates for long-life optical devices in opto-electronic integrated circuitsPrincipal Investigator

    • Principal Investigator
      NARITSUKA Shigeya
    • Project Period (FY)
      2006 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Meijo University
  •  Carbon Nanotube Growth using photo-excitation

    • Principal Investigator
      MARUYAMA Takahiro
    • Project Period (FY)
      2005 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Meijo University
  •  低コスト太陽電池用半導体単結晶基板の新作製法Principal Investigator

    • Principal Investigator
      成塚 重弥
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Meijo University
  •  Realization of dislocation-free epitaxy using nanochannel epitaxyPrincipal Investigator

    • Principal Investigator
      NARITSUKA Shigeya
    • Project Period (FY)
      2002 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Meijo University
  •  低角入射分子線エピタキシ法による絶縁膜上への半導体単結晶薄膜の横方向成長

    • Principal Investigator
      西永 頌
    • Project Period (FY)
      2000 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Meijo University
  •  Fabrication of VCSEL on dislocation free GaAs epitaxial layer grown on Si substratePrincipal Investigator

    • Principal Investigator
      NARITSUKA Shigeya, 西永 頌
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Meijo University
  •  ハイブリッドマイクロチャンネルエピタキシーを用いたSi上のGaAs無転位結晶Principal Investigator

    • Principal Investigator
      成塚 重弥
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Meijo University
      The University of Tokyo
  •  Band-engineering using III-V based ferromagnetic semiconductors and its application to magneto-optical devices

    • Principal Investigator
      TANAKA Masaaki
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  Ferromagnet/Semiconductor Hybrid Materials : Epitaxial Growth and Applications

    • Principal Investigator
      TANAKA Masaaki
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  GROWTH OF HIGH QUALITY SEMICONDUCTORS BY CONTAINER LESS METHOD UNDER MICROGRAVITY

    • Principal Investigator
      NISHINAGA Tatau
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      UNIVERSITY OF TOKYO
  •  Studies of High Quality GaAs Layers Heteroepitaxially Grown on Si Substrates by Microchannel Epitaxy and Fabrication of Laser Diodes

    • Principal Investigator
      NISHINAGA Tatau
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      The University of Tokyo
  •  STUDIES ON INTERSURFACE DIFFUSION IN NANO-STRUCTURE EPITAXY

    • Principal Investigator
      NISHINAGA Tatau
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Growth and properties of III-V-semiconductor/ferromagnet hybrid materials system (GaAs : Mn)

    • Principal Investigator
      TANAKA Masaaki
    • Project Period (FY)
      1996 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  MELT GROWTH OF SEMICONDUCTORS IN WEIGHTLESS ENVIRONMENT

    • Principal Investigator
      NISHINAGA Tatau
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  Studies of High Quality InP Layrs Heteroepitaxially Grown on Si Substrates by Epitaxial Lateral Overgrowth and Fabrication of Long-wavelengh Laser Diodes

    • Principal Investigator
      NISHINAGA Tatau
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      The University of Tokyo

All 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] Initial Growth Process of Carbon Nanotubes in Surface Decomposition of SiC2011

    • Author(s)
      Takahiro Maruyama, Shigeya Naritsuka
    • Total Pages
      18
    • Publisher
      In Tech (Rijeka, Croatia)
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Single-walled carbon nanotube growth from Ni catalyst particles under conventional growth conditions by alcohol catalytic chemical vapor deposition: in situ X-ray absorption fine structrure study2023

    • Author(s)
      Shusaku Karasawa, Takahiro Saida, Kamal Parasad Sharma, Sigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 62 Issue: SG Pages: SG1036-SG1036

    • DOI

      10.35848/1347-4065/acbe05

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Journal Article] In situ XAFS study on chemical states of Co and Ir nanoparticles under conventional growth condition of single-walled carbon nanotube via alcohol catalytic chemical vapor deposition2022

    • Author(s)
      Shusaku Karasawa, Kamal Prasad Sharma, Daiki Yamamoto, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Chem. Phys. Lett.

      Volume: 808 Pages: 140135-140135

    • DOI

      10.1016/j.cplett.2022.140135

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Journal Article] In situ XAFS study of the chemical state of a Co catalyst during single-walled carbon nanotube growth under conventinal growth conditions using alcohol catalytic chemical vapor deposition2022

    • Author(s)
      Shusaku Karasawa, Kamal Prasad Sharma, Daiki Yamamoto, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Chem. Phys. Lett.

      Volume: 804 Pages: 139889-139889

    • DOI

      10.1016/j.cplett.2022.139889

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Journal Article] Iridium-Catalyzed Single-Walled Carbon Nanotube Synthesis by Alcohol-Gas-Source Method Under Low Ethanol Pressure: Growth Temperature Dependence2022

    • Author(s)
      Daiki Yamamoto, Shusaku Karasawa, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Cryst. Res. Technol.

      Volume: 2022 Issue: 6 Pages: 2100226-2100226

    • DOI

      10.1002/crat.202100226

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Journal Article] Osumium catalyzed growth of vertically aligned and small-diameter single-walled carbon nanotubes by alcohol catalytic chemical vapor deposition2021

    • Author(s)
      Takahiro Maruyama, Daiki Yamamoto, Masaya Kobayashi, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka
    • Journal Title

      Diamond Relat. Mater.

      Volume: 117 Pages: 108501-108501

    • DOI

      10.1016/j.diamond.2021.108501

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Journal Article] Effect of growth temperature and ethanol flow rate on synthesis of single-walled carbon nanotube by alcohol catalytic chemical vapor deposition using Ir catalyst in hot-wall reactor2021

    • Author(s)
      Ai Misaki, T. Saida, S. Naritsuka, T. Maruyama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 60 Issue: 1 Pages: 015003-015003

    • DOI

      10.35848/1347-4065/abd0c5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Journal Article] Vertically aligned growth of small-diameter single-walled carbon nanotubes by alcohol catalytic chemical vapor deposition with Ir catalyst2020

    • Author(s)
      Maruyama Takahiro、Okada Takuya、Sharma Kamal Prasad、Suzuki Tomoko、Saida Takahiro、Naritsuka Shigeya、Iizumi Yoko、Okazaki Toshiya、Iijima Sumio
    • Journal Title

      Applied Surface Science

      Volume: 509 Pages: 145340-145340

    • DOI

      10.1016/j.apsusc.2020.145340

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03558, KAKENHI-PROJECT-19H02563
  • [Journal Article] Precipitation of multilayer graphene directly on gallium nitride template using Tungsten capping layer2020

    • Author(s)
      Yamada Jumpei、Ueda Yuki、Maruyama Takahiro、Naritsuka Shigeya
    • Journal Title

      Journal of Crystal Growth

      Volume: 534 Pages: 125493-125493

    • DOI

      10.1016/j.jcrysgro.2020.125493

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Journal Article] 分子線エピタキシー法により成長したGaAs系半導体レーザの室温パルス発振2020

    • Author(s)
      宮嶋孝夫、荒川亮太、石川裕介、神林大介、森田悠斗、森本晃平、宇野光輝、下原光貴、今井大地、成塚重弥
    • Journal Title

      名城大学総合研究所 紀要

      Volume: 25 Pages: 17-19

    • Data Source
      KAKENHI-PROJECT-19H02176
  • [Journal Article] Transfer-free fabrication of a graphene transparent electrode on a GaN-based light-emitting diode using the direct precipitation method2019

    • Author(s)
      Yamada Jumpei、Usami Shigeyoshi、Ueda Yuki、Honda Yoshio、Amano Hiroshi、Maruyama Takahiro、Naritsuka Shigeya
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 4 Pages: 040904-040904

    • DOI

      10.7567/1347-4065/aafe70

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-26105002, KAKENHI-WRAPUP-19H05451, KAKENHI-PROJECT-15H03558
  • [Journal Article] Crystal orientation effects of sapphire substrate on graphene direct growth by metal catalyst-free low-pressure CVD2019

    • Author(s)
      Ueda Yuki、Yamada Jumpei、Ono Taishi、Maruyama Takahiro、Naritsuka Shigeya
    • Journal Title

      Applied Physics Letters

      Volume: 115 Issue: 1 Pages: 013103-013103

    • DOI

      10.1063/1.5098806

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Journal Article] Effect of growth pressure on graphene direct growth on r-plane and c-plane sapphires by low-pressure CVD2018

    • Author(s)
      Ueda Yuki、Yamanda Jumpei、Fujiwara Kyosuke、Yamamoto Daichi、Maruyama Takahiro、Naritsuka Shigeya
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SA Pages: SAAE04-SAAE04

    • DOI

      10.7567/1347-4065/aaec86

    • Peer Reviewed
    • Data Source
      KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558, KAKENHI-INTERNATIONAL-15K21719
  • [Journal Article] Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate2018

    • Author(s)
      Kambayashi Daisuke、Mizuno Yosuke、Takakura Hiroyuki、Maruyama Takahiro、Naritsuka Shigeya
    • Journal Title

      Journal of Crystal Growth

      Volume: 496-497 Pages: 74-79

    • DOI

      10.1016/j.jcrysgro.2018.04.011

    • Peer Reviewed
    • Data Source
      KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558, KAKENHI-INTERNATIONAL-15K21719
  • [Journal Article] Mesa orientation dependence of lateral growth of GaN microcannnel epitaxy by electric liquid phase epitaxy using mesa-shaped substrate2018

    • Author(s)
      D. Kambayashi, Y. Mizuno, H. Takakura, T. Maruyama, S. Naritsuka
    • Journal Title

      J. Cryst. Growth

      Volume: -

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Journal Article] Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth2018

    • Author(s)
      Kusakabe Yasuhiro、Sugiyama Hayata、Takenaka Shun、Suzuki Yohei、Maruyama Takahiro、Naritsuka Shigeya、Shimizu Kazuo
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 8 Pages: 085501-085501

    • DOI

      10.7567/jjap.57.085501

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558
  • [Journal Article] Low-pressure N2 microplasma treatment for substrate surface cleaning prior to GaN selective growth2018

    • Author(s)
      Y. Kusakabe, H. Sugiyama, S. Takenaka, Y. Suzuki, T. Maruyama, S. Naritsuka, K. Shimizu
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: -

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Journal Article] Effects of fabrication method of Al2O3 buffer layer on Rh-catalyzed growth of single-walled carbon nanotubes by alcohol-gas-source chemical vapor deposition2017

    • Author(s)
      Kiribayashi Hoshimitsu、Fujii Takayuki、Kozawa Akinari、Ogawa Seigo、Saida Takahiro、Naritsuka Shigeya、Maruyama Takahiro
    • Journal Title

      J. Cryst. Growth

      Volume: 468 Pages: 114-118

    • DOI

      10.1016/j.jcrysgro.2016.10.068

    • Peer Reviewed
    • Data Source
      KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002
  • [Journal Article] Low temperature growth of single-walled carbon nanotubes from Ru catalysts by alcohol catalytic chemical vapor deposition2017

    • Author(s)
      Fujii Takayuki、Kiribayashi Hoshimitsu、Saida Takahiro、Naritsuka Shigeya、Maruyama Takahiro
    • Journal Title

      Diamond and Related Materials

      Volume: 77 Pages: 97-101

    • DOI

      10.1016/j.diamond.2017.06.009

    • Peer Reviewed
    • Data Source
      KAKENHI-INTERNATIONAL-15K21719, KAKENHI-PLANNED-26105002
  • [Journal Article] Spectroscopic study of X-ray absorption near-edge structure of chemical states of Pt catalyst during growth of single-walled carbon nanotubes2017

    • Author(s)
      Kumakura Makoto、Kozawa Akinari、Saida Takahiro、Naritsuka Shigeya、Maruyama Takahiro
    • Journal Title

      J. Cryst. Growth

      Volume: 468 Pages: 155-158

    • DOI

      10.1016/j.jcrysgro.2016.10.030

    • Peer Reviewed
    • Data Source
      KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002
  • [Journal Article] Low temperature growth of single-walled carbon nanotubes from Rh catalysts2017

    • Author(s)
      Maruyama Takahiro、Kozawa Akinari、Saida Takahiro、Naritsuka Shigeya、Iijima Sumio
    • Journal Title

      Carbon

      Volume: 116 Pages: 128-132

    • DOI

      10.1016/j.carbon.2017.01.098

    • Peer Reviewed
    • Data Source
      KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002
  • [Journal Article] Effects of Al2O3 Type on Activity of Al2O3-Supported Rh Catalysts in Single-Walled Carbon Nanotubes Growth by CVD2017

    • Author(s)
      Kiribayashi Hoshimitsu、Fujii Takayuki、Saida Takahiro、Naritsuka Shigeya、Maruyama Takahiro
    • Journal Title

      MRS Adv

      Volume: 2 Issue: 2 Pages: 89-95

    • DOI

      10.1557/adv.2017.25

    • Peer Reviewed
    • Data Source
      KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002
  • [Journal Article] Single-walled carbon nanotube synthesis using Pt catalysts under low ethanol pressure via cold-wall chemical vapor deposition in high vacuum2016

    • Author(s)
      Takahiro Maruyama, Hiroki Kondo, Ranajit Ghosh, Akinari Kozawa, Shigeya Naritsuka, Yoko Iizumi, Toshiya Okazaki, Sumio Iijima
    • Journal Title

      Carbon

      Volume: 96 Pages: 6-13

    • DOI

      10.1016/j.carbon.2015.09.010

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Journal Article] Lateral growth of GaN by liquid phase electroepitaxy using mesa-shaped substrate2016

    • Author(s)
      D. Kambayashi, H. Takakura, M. Tomita, M. Iwakawa, Y. Mizuno, T. Maruyama, S. Naritsuka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 10 Pages: 105502-105502

    • DOI

      10.7567/jjap.55.105502

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558, KAKENHI-PROJECT-26600089, KAKENHI-INTERNATIONAL-15K21719
  • [Journal Article] Synthesis of single-walled carbon nanotubres from Pd catalysts by gas source method using ethanol in high vacuum2016

    • Author(s)
      Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Journal Article] Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source2016

    • Author(s)
      Takahiro Maruyama, , Yutaka Yamashita, Takahiro Saida, Shin-ichiro Tanaka, Shigeya Naritsuka
    • Journal Title

      Journal of Crystal Growth

      Volume: 11 Pages: 053-053

    • DOI

      10.1016/j.jcrysgro.2016.11.053

    • Peer Reviewed
    • Data Source
      KAKENHI-PUBLICLY-16H00913, KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558
  • [Journal Article] Effect of N2 microplasma treatment on initial growth of GaN by metal-organic molecular beam epitaxy2016

    • Author(s)
      Y. Suzuki, Y. Kusakabe, S. Uchiyama, T. Maruyama, S. Naritsuka, K. Shimizu
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 8 Pages: 081002-081002

    • DOI

      10.7567/jjap.55.081002

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558, KAKENHI-PROJECT-26600089
  • [Journal Article] Direct growth of multilayer graphene by precipitation method using W capping layer2016

    • Author(s)
      J. Yamada, Y. Ueda, T. Maruyama, S. Naritsuka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 10 Pages: 100302-100302

    • DOI

      10.7567/jjap.55.100302

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558, KAKENHI-PROJECT-26600089
  • [Journal Article] Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization2016

    • Author(s)
      Masafumi Tomita, Yosuke Mizuno, Hiroyuki Takakura, Daisuke Kambayashi, Shigeya Naritsuka, and Takahiro Maruyama
    • Journal Title

      J. Cryst. Growth

      Volume: 440 Pages: 13-16

    • DOI

      10.1016/j.jcrysgro.2016.01.030

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-26600089, KAKENHI-PROJECT-15H03558, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002, KAKENHI-INTERNATIONAL-15K21719
  • [Journal Article] Microchannel epitaxy2016

    • Author(s)
      S. Naritsuka
    • Journal Title

      Prog. Cryst. Growth Charact. Mater.

      Volume: 62 Issue: 2 Pages: 302-316

    • DOI

      10.1016/j.pcrysgrow.2016.04.016

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558, KAKENHI-PROJECT-26600089
  • [Journal Article] Single-walled carbon nanotube growth on SiO2/Si using Rh catalysts by alcohol gas source chemical vapor deposition2016

    • Author(s)
      Akinari Kozawa, Hoshimitsu Kiribayashi, Seigo Ogawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Diamond Relat. Mater.

      Volume: 63 Pages: 159-164

    • DOI

      10.1016/j.diamond.2015.11.003

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25600031, KAKENHI-PROJECT-25000011
  • [Journal Article] Single-Walled Carbon Nanotube Growth from Pt catalysts using Alcohol Gas Source Method : Comparison with Co catalysts2015

    • Author(s)
      Akinari Kozawa, Hiroki Kondo, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Trans. Mater. Res. Soc.

      Volume: 40 Pages: 405-408

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Journal Article] Synthesis of single-wallec carbon nanotubres from Pd catalysts by gas source method using ethanol in high vacuum2015

    • Author(s)
      Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 1S Pages: 6-13

    • DOI

      10.7567/jjap.55.01ae02

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031, KAKENHI-PROJECT-25000011
  • [Journal Article] Growth Mechanism of Single-Walled Carbon Nanotubes from Pt Catalysts by Alcohol Catalytic CVD2015

    • Author(s)
      Takahiro Maruyama, Hiroki Kondo, Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka and Sumio Iijima
    • Journal Title

      MRS Proceedings

      Volume: mrsf14-1752 Pages: 1-4

    • DOI

      10.1557/opl.2015.43

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25400326, KAKENHI-PROJECT-25000011
  • [Journal Article] In Situ High-Temperature NEXAFS Study on Carbon Nanotube and Graphene Formation by Thermal Decomposition of SiC2015

    • Author(s)
      Takahiro Maruyama, Shigeya Naritsuka, and Kenta Amemiya
    • Journal Title

      J. Phys. Chem. C

      Volume: 119 Issue: 47 Pages: 26698-26705

    • DOI

      10.1021/acs.jpcc.5b05854

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03558, KAKENHI-PROJECT-25600031, KAKENHI-PROJECT-25000011
  • [Journal Article] Single-Walled Carbon Nanotube Growth from Pt catalysts using Alcohol Gas Source Method: Comparison with Co catalysts2015

    • Author(s)
      Akinari Kozawa, Hiroki Kondo, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: 40 Issue: 4 Pages: 405-408

    • DOI

      10.14723/tmrsj.40.405

    • NAID

      130005113374

    • ISSN
      1382-3469, 2188-1650
    • Language
      English
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Journal Article] Abnormal growth in super-low supersaturation microchannel epitaxy of (001) GaAs and its improvement2015

    • Author(s)
      Masafumi Tomita, Hiroyuki Takakura, Daisuke Kambayashi, Mizuno, Shigeya Naritsuka, and Takahiro Maruyama
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 54 Issue: 2 Pages: 025502-025502

    • DOI

      10.7567/jjap.54.025502

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-26600089
  • [Journal Article] Effect of arsenic cracking on In incorporation into MBE-grown InGaAs layer2015

    • Author(s)
      H. Iha, Y. Hirota, M. Yamauchi, N. Yamamoto, T. Maruyama, S. Naritsuka
    • Journal Title

      Phys. Status Solidi C

      Volume: 12 Issue: 6 Pages: 524-527

    • DOI

      10.1002/pssc.201400286

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Journal Article] Precipitation of high-quality multilayer-graphene using Al2O3 barrier and Au cap layers2015

    • Author(s)
      J. Yamada, M. Suzuki, Y. Ueda, T. Maruyama, S. Naritsuka
    • Journal Title

      MRS Proc.

      Volume: 1786 Pages: 1-6

    • DOI

      10.1557/opl.2015.766

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-15H03558, KAKENHI-PROJECT-25000011
  • [Journal Article] Selective growth of GaN by liquid phase electroepitaxy using aluminaum oxide mask2014

    • Author(s)
      Daisuke Kambayashi, Hiroyuki Takakura, Masafumi Tomita, Muneki Iwakawa, Yosuke Mizuno, Junpei Yamada, Takahiro Maruyama and Shigeya Naritsuka
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 53 Issue: 11S Pages: 11RC06-11RC06

    • DOI

      10.7567/jjap.53.11rc06

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-26105002, KAKENHI-PROJECT-26600089
  • [Journal Article] Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)2014

    • Author(s)
      Noriyuki Kuwano, Yuki Ryu, Masatoshi Mitsuhara, Chia-Hung Lin, Shota Uchiyama, Takahiro Maruyama, Yohei Suzuki, Shigeya Naritsuka
    • Journal Title

      J. Cryst. Growth

      Volume: 印刷中 Pages: 409-413

    • DOI

      10.1016/j.jcrysgro.2013.11.032

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Selective growth of (001) GaAs using a patterned graphene mask2014

    • Author(s)
      Yujirou Hirota, Yuya Shirai, Hiromu Iha, Yusuke Kito, Manabu Suzuki, Hironao Kato, Nao Yamamoto, Takahiro Maruyama, and Shigeya Naritsuka
    • Journal Title

      J. Cryst. Growth

      Volume: 印刷中 Pages: 563-566

    • DOI

      10.1016/j.jcrysgro.2014.01.033

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131, KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-26105002
  • [Journal Article] Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy2013

    • Author(s)
      Shigeya Naritsuka
    • Journal Title

      J. Crystal. Growth

      Volume: 印刷中

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Liquid phase electro-epitaxy of c-plane GaN layer under atmospheric pressure2013

    • Author(s)
      K. Shimizu, Y. Noma, M. Blajan, and S. Naritsuka
    • Journal Title

      IEEE Transactions on Industry Applications

      Volume: 49 Pages: 2308-2313

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy2013

    • Author(s)
      S. Naritsuka, C.H. Lin, S. Uchiyama, and T. Maruyama
    • Journal Title

      J. Crystal.Growth

      Volume: 378 Pages: 303-306

    • DOI

      10.1016/j.jcrysgro.2012.11.001

    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Liquid Phase Electro-Epitaxy of c-plane GaN layer under atmospheric pressure2013

    • Author(s)
      Daisuke Kanbayashi, Takeshige Hishida, Masahumi Tomita, Hiroyuki Takakura, Takahiro Maruyama and Shigeya Naritsuka
    • Journal Title

      J. Res. Inst. Meijo Univ.

      Volume: 12 Pages: 99-104

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Low-Temperature Single-Walled Carbon Nanotube Growth from Pt Catalysts Using Alcohol Gas Source Method in High Vacuum2013

    • Author(s)
      Hiroki Kondo, Naoya Fukuoka, Ranajit Ghosh, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 6S Pages: 06GD02-06GD02

    • DOI

      10.7567/jjap.52.06gd02

    • NAID

      210000142340

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01354, KAKENHI-PROJECT-25600031
  • [Journal Article] Formation of Carbon Nanotube/n-type 6H-SiC Heterojunction by Surface Decomposition of SiC and Its Electric Properties2013

    • Author(s)
      Takatoshi Yajima, Satoshi Sakakibara, Shigeya Naritsuka, Hiroyuki Yamane, Nobuhiro Kosugi, Takahiro Maruyama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 6S Pages: 06GD01-06GD01

    • DOI

      10.7567/jjap.52.06gd01

    • NAID

      210000142339

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Journal Article] Study of thermal crystallization of Ni catalysis for graphene CVD2013

    • Author(s)
      Yusuke Kito, Hiroya Yamauchi, Shigeya Naritsuka and Takahiro Maruyama
    • Journal Title

      J. Res. Inst. Meijo Univ.

      Volume: 12 Pages: 43-48

    • NAID

      40020217207

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Temperature dependence of a-plane GaN low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy2013

    • Author(s)
      Shigeya Naritsuka, Chia-Hung Lin, Shota Uchiyama, and Takahiro Maruyama
    • Journal Title

      physica status solidi(C)

      Volume: 10 Issue: 3 Pages: 392-395

    • DOI

      10.1002/pssc.201200647

    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Growth of Single-Walled Carbon Nanotubes from Pt catalysts by the Alcohol Gas Source Method under Low Ethanol Pressure: Growth Temperature Dependence2013

    • Author(s)
      Takahiro Maruyama, Hiroki Kondo, Naoya Fukuoka, Shigeya Naritsuka
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: 38 Issue: 4 Pages: 585-588

    • DOI

      10.14723/tmrsj.38.585

    • NAID

      130005004258

    • ISSN
      1382-3469, 2188-1650
    • Language
      English
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Journal Article] Nobuhiro Kosugi, Band alignment of a carbon nanotube/n-type 6H-SiC heterojunction formed by surface decomposition of SiC using photoelectron spectroscopy2012

    • Author(s)
      Takahiro Maruyama, Satoshi Sakakibara, Shigeya Naritsuka, Wataru Norimatsu, Michiko Kusunoki, Hiroyuki Yamane
    • Journal Title

      Appl. Phys. Lett.

      Volume: 101巻

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy2012

    • Author(s)
      Chia-Hung Lin, Shota Uchiyama, Takahiro Maruyama, and Shigeya Naritsuka
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 4 Pages: 045501-045501

    • DOI

      10.1143/apex.5.045501

    • NAID

      10030593184

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Band Alignment of a carbon nanotube/n-type 6H-SiC heterojunction formed by surface decomposition of SiC using photoelectron spectroscopy2012

    • Author(s)
      Takahiro Maruyama, Satoshi Sakakibara, Shigeya Naritsuka, Wataru Norimatsu, Michiko Kusunoki, Hiroyuki Yamane, Nobuhiro Kosugi (Takahiro Maruyama)
    • Journal Title

      Appl. Phys. Lett.

      Volume: 101 Issue: 9 Pages: 92106-92106

    • DOI

      10.1063/1.4748792

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119, KAKENHI-PROJECT-24685032
  • [Journal Article] Near-edgeX-rayabsorption fine structure study of vertically aligned carbon nanotubesgrown by the surface decomposition of SiC2012

    • Author(s)
      Takahiro Maruyama, Yuki Ishiguro,Shigeya Naritsuka, Wataru Norimatsu, Michiko Kusunoki, Kenta Amemiya, Hideshi Ishii,ToshiakiOhta
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 51巻

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy2012

    • Author(s)
      Chia-Hung Lin, Ryota Abe, Shota Uchiyama, Takahiro Maruyama, Shigeya Naritsuka
    • Journal Title

      J. Cryst. Growth

      Volume: 352 Issue: 1 Pages: 214-217

    • DOI

      10.1016/j.jcrysgro.2011.10.051

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Direct Growth of Carbon Nanotubes on ZnO (000-1) Substrate Surface using Alcohol Gas Source Method in High Vacuum Method2012

    • Author(s)
      Takayasu Iokawa, Tomoyuki Tsutsui, Shigeya Naritsuka
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 51 Issue: 1S Pages: 01AH04-01AH04

    • DOI

      10.1143/jjap.51.01ah04

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Low Temperature Synthesis of Single-Walled Carbon Nanotubes in a High Vacuum using Pt catalyst in Alcohol Gas Source Method2012

    • Author(s)
      Naoya Fukuoka, Yoshihiro Mizutani, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijima (N. Fukuoka)
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 51 Issue: 6S Pages: 06FD23-06FD23

    • DOI

      10.1143/jjap.51.06fd23

    • NAID

      210000140739

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] X-ray photoemission spectroscopy study of GaAs (111) B substrate naitridation using an RF-radical source2012

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Takahiro Maruyama
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 51 Issue: 4R Pages: 048004-048004

    • DOI

      10.1143/jjap.51.048004

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Single-Walled Carbon Nanotube Synthesis on SiO2/Si substrates at very low pressures by the alcohol gas source method using a Pt catalyst2012

    • Author(s)
      Yoshihiro Mizutani, Naoya Fukuoka, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijima (Y. Mizutani)
    • Journal Title

      Diamond & Relat. Mater.

      Volume: 26 Pages: 78-82

    • DOI

      10.1016/j.diamond.2012.04.007

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Near-edge X-ray absorption fine structure study of vertically aligned carbon nanotubes grown by the surface decomposition of SiC2012

    • Author(s)
      Takahiro Maruyama, Yuki Ishiguro, Shigeya Naritsuka, Wataru Norimatsu, Michiko Kusunoki, Kenta Amemiya, Hideshi Ishii, Toshiaki Ohta (T. Maruyama)
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 51 Issue: 5R Pages: 55102-55102

    • DOI

      10.1143/jjap.51.055102

    • NAID

      40019280423

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119, KAKENHI-PROJECT-23550107
  • [Journal Article] XPS study of Low Temperature Nitridation of GaAs (001) Surface using RF-radical source2012

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Yohei Monno, Takahiro
    • Journal Title

      Jpn.J.Appl.Phys.

      Volume: 51 Issue: 1R Pages: 015602-015602

    • DOI

      10.1143/jjap.51.015602

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Effect of mask material on selective growth of GaN by RF-MBE2011

    • Author(s)
      Yuki Nagae, Takenori Iwatsuki, Yuya Shirai, Yuki Osawa, Shigeya Naritsuka, Takahiro Maruyama
    • Journal Title

      J. Crystal Growth

      Volume: 324 Issue: 1 Pages: 88-92

    • DOI

      10.1016/j.jcrysgro.2011.04.022

    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy2011

    • Author(s)
      Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka
    • Journal Title

      J.Crystal Growth

      Volume: 318 Pages: 450-453

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Low angle incidence microchannel epitaxy of GaN using ammonia-based organic molecular beam epitaxy2011

    • Author(s)
      Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka
    • Journal Title

      J.Crystal Growth

      Volume: 318 Pages: 446-449

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Kenta Amemiya, Initial stage of carbon nanotube formation process by surface decomposition of SiC2011

    • Author(s)
      Takahiro Maruyama,Satoshi Sakakibara, Shigeya Naritsuka
    • Journal Title

      STM and NEXAFS study, Diamond & Relat. Mater.

      Volume: 20巻 Pages: 1325-1328

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] XPS study of nitridation mechanism of GaAs (001) surface by RF-radical source2011

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Yohei Monno, Takahiro Maruyama
    • Journal Title

      physica status solidi (c)

      Volume: 8 Pages: 291-293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Journal Article] Single-Walled Carbon Nanotube Growth in High Vacuum using Pt Catalyst in Alcohol Gas Source Method2011

    • Author(s)
      T.Maruyama, Y.Mizutani, S.Naritsuka S.Lijima
    • Journal Title

      Materials Express

      Volume: 1 Issue: 4 Pages: 267-272

    • DOI

      10.1166/mex.2011.1046

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] SWNT growth on A120x/Co/A120x multilayer catalyst using alcohol gas source method in high vacuum2011

    • Author(s)
      Y.Mizutani, K.Sato, T.Maruyama, S.Naritsuka
    • Journal Title

      J.Cryst.Growth

      Volume: 318 Issue: 1 Pages: 1101-1104

    • DOI

      10.1016/j.jcrysgro.2010.11.084

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Sumio Iijima, Single-Walled Carbon Nanotube Growth in High Vacuum using Pt Catalyst in Alcohol Gas Source Method2011

    • Author(s)
      Takahiro Maruyama, Yoshihiro Mizutani, Shigeya Naritsuka
    • Journal Title

      Mater. Express

      Volume: 1巻 Pages: 267-272

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Initial stage of carbon nanotube formation process by surface decomposition of SiC : STM and NEXAFS study2011

    • Author(s)
      T.Maruyama, S.Sakakibara, S.Naritsuka, K.Amemiya
    • Journal Title

      Diamond & Relat.Mater.

      Volume: 20 Issue: 10 Pages: 1325-1328

    • DOI

      10.1016/j.diamond.2011.09.001

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Effect of Annealing in a Hydrogen Atmosphere on Carbon Nanocap Formation in Surface Decomposition of6H-SiC(000-1)2010

    • Author(s)
      K. Ueda, Y. Iijima, T. Maruyama and S.Naritsuka
    • Journal Title

      J. Nanotechnol. Nanosci.

      Volume: 10巻 Pages: 4054-4059

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Effect of Anncaling in a Hydrogen Atmosphere on Carbon Nanocap Formation in Surface Decomposition of 6H-SiC(000-1)2010

    • Author(s)
      K.Ueda, Y.Iijima, T.Maruyama, S.Naritsuka
    • Journal Title

      J.Nanotechnol.Nanosci 10

      Pages: 4054-4059

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Low-Temperature Synthesis of Single-Walled Carbon Nanotubes by Alcohol Gas Source Growth in High Vacuum2010

    • Author(s)
      T. Maruyama, K. Sato, Y. Mizutani, K.Tanioku, T. Shiraiwa and S. Naritsuka
    • Journal Title

      J. Nanotechnol. Nanosci.

      Volume: 10巻 Pages: 4095-4101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Effect of Buffer Thickness on Single-Walled Carbon Nanotube Growth using Aluminum Oxide Buffer Layer with Alcohol Gas Source Method2010

    • Author(s)
      Kuniori Sato, Tomoyuki Shiraiwa, Takahiro Maruyama, Shigeya Naritsuka
    • Journal Title

      J.Nanotechnol.Nanosci. 10

      Pages: 3929-3933

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Low-Temperature Synthesis of Single-Walled Carbon Nanotubes by Alcohol Gas Source Growth in High Vacuum2010

    • Author(s)
      T.Maruyama, K.Sato, Y.Mizutani, K.Tanioku, T.Shiraiwa, S.Naritsuka
    • Journal Title

      J.Nanotechnol.Nanosci. 10

      Pages: 4095-4101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Enhancement of Single-Walled Carbon Nanotube Formation Using Aluminum Oxide Buffer Layer in Alcohol Gas Source Method2010

    • Author(s)
      Takahiro Maruyama, Tomoyuki Shiraiwa, Kuninori Sato, Shigeya Naritsuka
    • Journal Title

      MRS Proceedings 1142-JJ

      Pages: 5-7

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Influence of substrate temperature on nitridation of(001)GaAs using RF-radical source2009

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Takahiro Maruyama
    • Journal Title

      J.Cryst.Growth 311

      Pages: 2992-2995

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Effect of Buffer Thickness on Single-Walled Carbon Nanotube Growth using Aluminum Oxide Buffer Layer with Alcohol Gas Source Method2009

    • Author(s)
      Kuniori Sato, Tomoyuki Shiraiwa Takahiro Maruyama, and Shigeya Naritsuka
    • Journal Title

      J. Nanosci. Nanotechnol. (掲載決定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source2009

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Takahiro Maruyama
    • Journal Title

      J. Cryst. Growth 311

      Pages: 2992-2995

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article]2009

    • Author(s)
      Takahiro Maruyama, Shigeya Naritsuka, Michiko Kusunoki
    • Journal Title

      Research Progress in Materials Science(NOVA Science Publishers)

      Pages: 131-148

    • Data Source
      KAKENHI-PROJECT-21510119
  • [Journal Article] Effect of crystallographic orientation of microchannel on low-angle incidence microchannel epitaxy on (001) GaAs substrate2009

    • Author(s)
      Shigeya Naritsuka, Shuji Matsuoka, Yuji Ishida, Takahiro Maruyama
    • Journal Title

      J. Cryst. Growth 311

      Pages: 1778-1782

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Effect of crystallographic orientation of microchannel on low-angle in cidence microchannel epitaxy on(001)GaAs substrate2009

    • Author(s)
      Shigeya Naritsuka, Shuji Matsuoka, Yuji Ishida, Takahiro Maruyama
    • Journal Title

      J.Cryst.Growth 311

      Pages: 1778-1782

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Enhancement of Single-Walled Carbon Nanotube Formation using Aluminum Oxide Buffer Layer in Alcohol Gas Source Method2009

    • Author(s)
      T. Maruyama, T. Shiraiwa, K. Sato, S. Naritsuka
    • Journal Title

      Mater. Res. Soc. Svmp. Proc. 1142(on line)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Low-Temperature Synthesis of Single-Walled Carbon Nanotubes by Alcohol Gas Source Growth in High Vacuum2009

    • Author(s)
      T. Maruyama, K. Sato, Y. Mizutani, K. Tanioku, T. Shiraiwa, and S. Naritsuka
    • Journal Title

      J. Nanosci. Nanotechnol. (掲載決定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Effect of Annealing in a Hydrogen Atmosphere on Carbon Nanocap Formation in Surface Decomposition of 6H-SiC(000-12009

    • Author(s)
      K. Ueda, Y. Iijima, T. Maruyama, and S. Naritsuka
    • Journal Title

      J. Nanosci. Nanotechnol. (掲載決定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Effect of crystallographic orientation of microchannel on low-angle incidence microchannel epitaxy on (001)GaAs substrate2008

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Ishida, T. Maruyama
    • Journal Title

      J. Crystal Growth 311

      Pages: 1778-1782

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Effect of crystallographic orientation of microchannel on low-angle incidence microchannel epitaxy on(001)GaAs substrate2008

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Ishida, T. Maruyama
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 1778-1782

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Optimization of initial growth in low-angle incidence microchannel epitaxy of GaAs on (001) GaAs substrates2008

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Yamashita, T. Maruyama
    • Journal Title

      J. Crystal Growth 310(7-9)

      Pages: 1571-1575

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Liquid-phase epitaxy of GaAs by temperature difference method to realize wide lateral growth2008

    • Author(s)
      S. Naritsuka, Y. Tejima, K. Fujie, T. Maruyama
    • Journal Title

      J. Crystal Growth 310(7-9)

      Pages: 1642-1646

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Liquid-phase epitaxy of GaAs by temperature difference method to realize wide lateral growth2008

    • Author(s)
      S. Naritsuka, Y. Tejima, K. Fujie, T. Maruyama
    • Journal Title

      Journal of Crystal Growth 310(7-9)

      Pages: 1642-1646

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Low temperature growth of carbon nanotubes on Si substrates in high vacuum2008

    • Author(s)
      Kenji Tanioku, Takahiro Maruyama, and Shigeya Naritsuka
    • Journal Title

      Diamond Relat. Mater. 17

      Pages: 589-593

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Effect of crystallographic orientation of microchannel on low-angle incidence microchannel epitaxy on (001) GaAs substrate2008

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Ishida, T. Maruyama
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 1778-1782

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Optimization of initial growth in low-angle incidence microchannel epitaxy of GaAs on (001) GaAs substrates2008

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Yamashita, T. Maruyama
    • Journal Title

      Journal of Crystal Growth 310(7-9)

      Pages: 1571-1575

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Optimization of initial growth in low-angle incidence microchannel epitaxy of GaAs on(001)GaAs substrates2008

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Yamashita, T. Maruyama
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 1571-1575

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Low temperature growth of carbon nanotubes on Si substrates in high vacuum2008

    • Author(s)
      K. Tanioku, T. Maruyama, S. Naritsuka
    • Journal Title

      Diamond Relat. Mater. 17

      Pages: 589-593

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Effect of substrate surface on GaN dot structure grown on Si(111) by droplet epitaxy2007

    • Author(s)
      H. Otsubo, T. Kondo, Y. Yamamoto T. Maruyama, S. Naritsuka
    • Journal Title

      Phys. Stat. sol. No.7

      Pages: 2322-2325

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] GaAs/c-GaN/GaAs Multi-Layered Structure Fabricated by Using RF-Plasma Source Nitridation Technique2007

    • Author(s)
      Y. Yamamoto, M. Mori, H. Otsubo, T. Maruyama and S. Naritsuka
    • Journal Title

      Phys.Stat.sol. No.7

      Pages: 2326-2329

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] In situ annealing of GaN dot structures grown by droplet epitaxy on (111) Si substrates2007

    • Author(s)
      S. Naritsuka, T. Kondo, H. Otsubo, K. Saitoh, Y. Yamamoto, T. Maruyama
    • Journal Title

      J. Crystal Growth 300(1)

      Pages: 118-122

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Effect of substrate surface on GaN dot structure grown on Si(111)by droplet epitaxy2007

    • Author(s)
      H. Otsubo, T. Kondo, Y. Yamamoto T. Maruyama and S. Naritsuka
    • Journal Title

      Phys. Stat. sol No7

      Pages: 2322-2325

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Formation mechanism of rotational twins in beam-induced lateral epitaxy on(111)B GaAs substrate2007

    • Author(s)
      S. Naritsuka, S. Matsuoka, T. Kondo, K. Saitoh, T. Suzuki, Y. Yamamoto and T. Maruyama
    • Journal Title

      J. Crystal Growth 301-302

      Pages: 42-46

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrate2007

    • Author(s)
      S. Naritsuka, S. Matsuoka, T. Kondo, K. Saitoh, T. Suzuki, Y. Yamamoto, T. Maruyama
    • Journal Title

      J. Crystal Growth 301-302

      Pages: 42-46

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Fabrication of GaN dot structure by droplet epitaxy using NH_32007

    • Author(s)
      T. Maruyama, H. Otsubo, T. Kondo, Y. Yamamoto and S. Naritsuka
    • Journal Title

      J. Crystal Growth 301-302

      Pages: 486-489

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Study of lateral growth of AlGaAs microchannel epitaxy2007

    • Author(s)
      A. Hattori, S. Naritsuka, K. Tsuge and T. Maruyama
    • Journal Title

      名城大学総合研究所 総合学術研究論文集 第6号

      Pages: 97-104

    • NAID

      40016818824

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Study of lateral growth of AlGaAs microchannel epitaxy2007

    • Author(s)
      Atsushi Hattori, Shigeya Naritsuka, Kei Tsuge, Takahiro Maruyama
    • Journal Title

      名城大学総合研究所 総合学術研究論文集 第6号

      Pages: 97-104

    • NAID

      40016818824

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Fabrication of GaN dot structure by droplet epitaxy using NH_32007

    • Author(s)
      T. Maruyama, H. Otsubo, T. Kondo, Y. Yamamoto, S. Naritsuka
    • Journal Title

      J. Crystal Growth 301-302

      Pages: 486-489

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] GaAs/c-GaN/GaAs Multi-Layered Structure Fabricated by Using RF-Plasma Source Nitridation Technique2007

    • Author(s)
      Y. Yamamoto, M. Mori, H. Otsubo, T. Maruyama and S. Naritsuka
    • Journal Title

      Phys. Stat. sol No7

      Pages: 2326-2329

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] In situ annealing of GaN dot structures grown by droplet epitaxy on (111) Si substrates2007

    • Author(s)
      Naritsuka, Shigeya
    • Journal Title

      Journal of Crystal Growth 300(1)

      Pages: 118-122

    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Formation mechanism of rotational twins in beam-induced lateral epitaxy on (111)B GaAs substrate2007

    • Author(s)
      Naritsuka, Shigeya
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 42-46

    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] STM and XPS studies of early stages of carbon nanotube growth by surface decomposition of 6H-SiC(000-1) under various oxygen pressures2007

    • Author(s)
      T. Maruyama, H. Bang, N. Fujita, Y. Kawamura, S. Naritsuka, and M. Kusunoki
    • Journal Title

      Diamond Relat. Mater 16

      Pages: 1078-1081

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] GaAs/ c-GaN/ GaAs Multi-Layered Structure Fabricated by Using RF-Plasma Source Nitridation Technique2007

    • Author(s)
      Y. Yamamoto, M. Mori, H. Otsubo, T. Maruyama, S. Naritsuka
    • Journal Title

      Phys. Stat. sol. No7

      Pages: 2326-2329

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] In situ annealing of GaN dot structures grown by droplet epitaxy on(111)Si substrates2007

    • Author(s)
      S. Naritsuka, T. Kondo, H. Otsubo, K. Saitoh, Y. Yamamoto and T. Maruyama
    • Journal Title

      J. Crystal Growth 300(1)

      Pages: 118-122

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Precise control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor2006

    • Author(s)
      M.Mizutani, F.Teramae, K.Takeuchi, T.Murase, S.Naritsuka, T.Maruyama
    • Journal Title

      J.J.A.P 45 4B

      Pages: 3552-3555

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Precise control of growth of DBR by MBE using in-situ reflectance monitoring system2006

    • Author(s)
      M. Mizutani, F. Teramae, O. Kobayashi, S. Naritsuka, T. Maruyama
    • Journal Title

      phys. stat. sol. (c)3

      Pages: 659-662

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Fabrication of GaN dot structures on Si substrates by droplet epitaxy2006

    • Author(s)
      T. Kondo, K. Saito, Y. Yamamoto, T. Maruyama, S. Naritsuka
    • Journal Title

      phys. stat. sol. (c)

      Pages: 1700-1703

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Observation of Nanosized Caps Structures on 6H-SiC(0001-) Substrates by Ultrahigh-Vacuum Scanning Tunneling Microscopy2006

    • Author(s)
      H. Bang, Y. Ito, Y. Kawamura, E. Hosoda, C. Yoshida, T. Maruyama, S. Naritsuka and M. Kusunoki
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 372-374

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Characterization of small-diameter carbon nanotubes and carbon nanocaps on SiC(000-1) using Raman spectroscopy2006

    • Author(s)
      T.Maruyama, T.Shiraiwa, N.Fujita, Y.Kawamura, S.Naritsuka, M.Kusunoki
    • Journal Title

      Jpn. J. Appl. Phys. 45巻

      Pages: 7231-7233

    • NAID

      10018246912

    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Precise control of Vertical-Cavity Surface-Emitting Laser Structural Growth Using Molecular Beam Epitaxy In Situ Reflectance Monitor2006

    • Author(s)
      M. Mizutani, F. Teramae, K. Takeuchi, T. Murase, S. Naritsuka, T. Maruyama
    • Journal Title

      Jpn. J. Appl. Phys 45 4B

      Pages: 3552-3555

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Precise Control of Growth of VCSEL Structure by using MBE in-situ Reflectance Monitor2006

    • Author(s)
      M.Mizutani, F.Teramae, K.Takeuchi, T.Murase, S.Naritsuka, T.Maruyama
    • Journal Title

      Jpn.J.Appl.Phys. 印刷中

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Observation of Nanosized Caps Structures on 6H-SiC(000 1^^-) Substrates by Ultrahigh-Vacuum Scanning Tunneling Microscopy2006

    • Author(s)
      H.Bang, Y.Ito, Y.Kawamura, E.Hosoda, C.Yoshida, T.Maruyama, S.Naritsuka, M.Kusunoki
    • Journal Title

      Jpn.J.Appl.Phys. 45巻

      Pages: 372-374

    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Precise Control of Growth of DBR by MBE using in-situ reflectance monitoring system2006

    • Author(s)
      M.Mizutani, F.Teramae, O.Kobayashi, S.Naritsuka, T.Maruyama
    • Journal Title

      Phys.Stat.Sol 3

      Pages: 659-662

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Scanning-tunneling-microscopy of the formation of carbon nanocaps on SiC(000-1)2006

    • Author(s)
      T. Maruyama, H. Bang, Y. Kawamura, N. Fujita, K. Tanioku, T. Shiraiwa, Y. Hozumi, S. Naritsuka and M. Kusunoki
    • Journal Title

      Chem. Phys. Lett. 423

      Pages: 317-320

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Fabrication of GaN dot structures on Si substrate by droplet epitaxy2006

    • Author(s)
      T.Kondo, K.Saitoh, Y.Yamamoto, S.Naritsuka, T.Maruyama
    • Journal Title

      J.Cryst.Growth 印刷中

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Fabrication of nitrided mask on GaAs surface and its machinability in STM lithography2006

    • Author(s)
      Y. Yamamoto, S. Matsuoka, T. Kondo, T. Maruyama, S. Naritsuka
    • Journal Title

      Materials Research Society Symposium Proceedings 891

      Pages: 157-162

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Journal Article] Characterization of small-diameter carbon nanotubes and carbon nanocaps on SiC(000-1) using Raman spectroscopy2006

    • Author(s)
      T. Maruyama, T. Shiraiwa, N. Fujita, Y. Kawamura, S. Naritsuka, and M. Kusunoki
    • Journal Title

      Jpn. J. Appl. Phys. 45

      Pages: 7231-7233

    • NAID

      10018246912

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] Precise control of growth of DBR by MBE using in-sifu reflectance monitoring system2006

    • Author(s)
      M.Mizutani, F.Teramae, O.Kobayashi, S.Naritsuka, T.Maruyama
    • Journal Title

      phys.stat.sol.? 3

      Pages: 659-662

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Fabrication of GaN dot structures on Si substrates by droplet epitaxy2006

    • Author(s)
      T.Kondo, K.Saito, Y.Yamamoto, T.Maruyama, S.Naritsuka
    • Journal Title

      phys.stat.sol.(a)

      Pages: 1700-1703

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Scanning-tunneling-mnicroscopy of the formation of carbon nanocaps on SiC(000-1)2006

    • Author(s)
      T.Maruyama, H.Bang, Y.Kawamura, N.Fujita, K.Tanioku, T.Shiraiwa, Y.Hozumi, S.Naritsuka, M.Kusunoki
    • Journal Title

      Chem. Phys. Lett. 423巻

      Pages: 317-320

    • Data Source
      KAKENHI-PROJECT-17560015
  • [Journal Article] "Precise reflectance monitoring system" control of growth of DBR by MBE using in-situ2006

    • Author(s)
      M.Mizutani, F.Teramae, O.Kobayashi, S.Naritsuka, T.Maruyama
    • Journal Title

      phys.stat.sol.(c) 3

      Pages: 659-662

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Fabrication of GaN dot structures on Si substrates by droplet epitaxy2006

    • Author(s)
      T.Kondo, K.Saito, Y.Yamamoto, T.Maruyama, S.Naritsuka
    • Journal Title

      phys.stat.sol.(a) 203 7

      Pages: 1700-1703

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Fabrication Process of Nitrided Mask on GaAs Surface for Nano Lithography2005

    • Author(s)
      Y.Yamamoto, T.Kondo, S.Matsuoka, T.Maruyama, S.Naritsuka
    • Journal Title

      Extended Abstracts of the 24th Electronic Materials Symposium 24

      Pages: 253-253

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Lithography of nanometer-size pattern in surface oxide of GaAs using ultrahigh-Vacuum scanning tunnel microscope2005

    • Author(s)
      H.Uemura, Y.Ito, Y.Kawamura, T.Maruyama, S.Naritsuka
    • Journal Title

      Journal of Research Insitute of Meijo University 4

      Pages: 133-139

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Defect formation mechanism in beam-induced lateral epitaxy on (111)B GaAs substrate2005

    • Author(s)
      K.Saitoh, T.Suzuki, T.Maruyama, S.Naritsuka
    • Journal Title

      J.Crystal Growth 277

      Pages: 51-56

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Lithography of nanometer-size pattern in surface oxide of GaAs using ultrahigh-vacuum scanning tunnel microscope2005

    • Author(s)
      H.Uemura, Y.Ito, Y.Kawamura, T.Maruyama, S.Naritsuka
    • Journal Title

      Journal of Research Institute of Meijo University no.4

      Pages: 133-139

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Multinuclear layer-by-layer growth on Ge(111)by LPE2005

    • Author(s)
      T.Maruyama, K.Matsuda, N.Naritsuka
    • Journal Title

      J.Crystal Growth 275

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Multinuclear layer-by-layer growth on Ge(111) by LPE2005

    • Author(s)
      T.Maruyama, K.Matsuda, N.Naritsuka
    • Journal Title

      J.Crystal Growth

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation2005

    • Author(s)
      S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Nishinaga
    • Journal Title

      Jpn.J.Appl.Phys.

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Multinuclear layer-by-layer growth on Ge(111) by LPE2005

    • Author(s)
      T.Maruyama, K.Matsuda, N.Naritsuka
    • Journal Title

      J.Crystal Growth 275

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation2005

    • Author(s)
      S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Nishinaga
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 1669-1672

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Density Control of GaN dots on Si substrates by droplet epitaxy2005

    • Author(s)
      T.Kondo, K.Saitoh, Y.Yamamoto, T.Maruyama, S.Naritsuka
    • Journal Title

      Extended Abstracts of the 24^<th> Electronic Materials Symposium 24

      Pages: 229-229

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation2005

    • Author(s)
      S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Nishinaga
    • Journal Title

      Jpn.J.Appl.Phys 44

      Pages: 1669-1672

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Growth mechanism of beam induced lateral epitaxy on (001)GaAs substrate in molecular beam epitaxy2004

    • Author(s)
      S.Naritsuka, T.Suzuki, K.Saitoh, T.Maruyama, T.Nishinaga
    • Journal Title

      J.Crystal Growth 276

      Pages: 64-71

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Simulation of three-Dimensional Stress in GaAs Microchannel Epitaxy Layer on Si Substrates2004

    • Author(s)
      S.Naritsuka, M.Okada, T.Maruyama
    • Journal Title

      Jpn.J.Appl.Phya. 43

      Pages: 3289-3292

    • NAID

      10013154233

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Beam induced lateral epitaxy of GaAs grown directly on Si(001) ridge structure by molecular beam epitaxy2004

    • Author(s)
      T.Kondo, K.Saitoh, T.Maruyama, S.Naritsuka
    • Journal Title

      Extended Abstracts of the 23^<rd> Electronic Materials Symposium

      Pages: 63-63

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Atomically flat surface on Ge(111) mesa by LPE growth2004

    • Author(s)
      K.Matsuda, T.Maruyama, S.Naritsuka
    • Journal Title

      Extended Abstracts of the 23^<rd> Electronic Materials Symposium

      Pages: 67-67

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Growth mechanism of beam induced lateral epitaxy on (001) GaAs substrate in molecular beam epitaxy"2004

    • Author(s)
      S.Naritsuka, T.Suzuki, K.Saitoh, T.Maruyama, T.Nishinaga
    • Journal Title

      J.Crystal Growth 276

      Pages: 64-71

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Simulation of Three-Dimensional Stress in GaAs Microchannel Epitaxy Layer on Si Substrates2004

    • Author(s)
      S.Naritsuka, M.Okada, T.Maruyama
    • Journal Title

      Jpn.J.Appl.Phys. 43

      Pages: 3289-3292

    • NAID

      10013154233

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Growth mechanism of beam induced lateral epitaxy on (001) GaAs substrate in molecular beam epitaxy2004

    • Author(s)
      S.Naritsuka, T.Suzuki, K.Saitoh, T.Maruyama, T.Nishinaga
    • Journal Title

      J.Crystal Growth 276

      Pages: 64-71

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Beam induced lateral epitaxy : a new approach for lateral growth in molecular beam epitaxy2003

    • Author(s)
      T.Suzuki, S.Naritsuka, T.Maruyama, T.Nishinaga
    • Journal Title

      Cryst.Res.Technol. 38, No.7-8

      Pages: 614-618

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Oxygen incorporation into MBE-grown AlGaAs layers2003

    • Author(s)
      S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Maruyama, T.Nishinaga
    • Journal Title

      Materials Research Society Symposium Proceeding Vol.744

      Pages: 445-449

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Beam induced lateral epitaxy : a new approach for lateral growth in molecular beam epitaxy2003

    • Author(s)
      T.Suzuki, S.Naritsuka, T.Maruyama, T.Nishinaga
    • Journal Title

      Cryst. Res. Technol 38 7-8

      Pages: 614-618

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Numerical model for Oxygen incorporation in AlGaAs layer grown by molecular beam epitaxy2003

    • Author(s)
      S.Naritsuka, O.Kobayashi, T.Maruyama
    • Journal Title

      Jpn.J.Appl.Phys. 42

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] LPE growth of atomically flat Ge layer on a mesa pattern2003

    • Author(s)
      T.Maruyama, K.Matsuda, N.Saikawa, S.Naritsuka
    • Journal Title

      Proceeding of 2003 MRS fall meeting 788

      Pages: 583-583

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Oxygen incorporation into MBE-grown AIGaAs layers2003

    • Author(s)
      S.Naritsuka, O.Kobayashi, K.Mitsuda, T.Maruyama, T.Nishinaga
    • Journal Title

      Materials Research Society Symposium Proceeding 744

      Pages: 445-449

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Beam induced lateral epitaxy : a new way to lateral growth in molecular beam epitaxy2003

    • Author(s)
      S.Naritsuka, K.Saitoh, T.Suzuki, T.Maruyama
    • Journal Title

      Proceeding of 2003 MRS fall meeting 799

      Pages: 91-91

    • Data Source
      KAKENHI-PROJECT-14350172
  • [Journal Article] Numerical model for Oxygen incorporation in AlGaAs layer grown by molecular beam epitaxy2003

    • Author(s)
      S.Naritsuka, O.Kobayashi, T.Maruyama
    • Journal Title

      Jon.J.Appl.Phys. 42

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350172
  • [Patent] グラフェン基板の製造方法2017

    • Inventor(s)
      成塚重弥、上田悠貴
    • Industrial Property Rights Holder
      成塚重弥、上田悠貴
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-091586
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Patent] グラフェン基板、及びこの製造方法2017

    • Inventor(s)
      成塚重弥、山田純平
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-073383
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Patent] 導電体、及び導電体の製造方法2017

    • Inventor(s)
      成塚重弥、山田純平、藤原亨介
    • Industrial Property Rights Holder
      成塚重弥、山田純平、藤原亨介
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2017-174591
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Patent] グラフェン素材の製造方法及びグラフ ェン素材2011

    • Inventor(s)
      成塚重弥,丸山隆浩
    • Industrial Property Rights Holder
      学校法人 名城大学
    • Filing Date
      2011-06-14
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Patent] グラフェン配線構造2011

    • Inventor(s)
      成塚重弥,丸山隆浩
    • Industrial Property Rights Holder
      学校法人 名城大学
    • Filing Date
      2011-07-26
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Patent] グラフェン素材の製造方法2011

    • Inventor(s)
      成塚重弥,丸山隆浩
    • Industrial Property Rights Holder
      学校法人 名城大学
    • Filing Date
      2011-07-05
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Patent] グラフェン素材の製造方法及びグラフ ェン素材2011

    • Inventor(s)
      成塚重弥,丸山隆浩
    • Industrial Property Rights Holder
      学校法人 名城大学
    • Filing Date
      2011-02-15
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Patent] グラフェン素材の製造方法及びグラフェン素材2010

    • Inventor(s)
      成塚重弥、丸山隆浩
    • Industrial Property Rights Holder
      名城大学
    • Industrial Property Number
      2010-284762
    • Filing Date
      2010-12-26
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Patent] カーボンナノチューブの作製方法、電流制御素子及びその作製方法2006

    • Inventor(s)
      成塚重弥、丸山隆浩、楠美智子
    • Industrial Property Rights Holder
      学校法人名城大学、財団法人ファインセラミックスセンター
    • Filing Date
      2006-05-25
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Patent] カーボンナノチューブの製造方法2006

    • Inventor(s)
      粟野祐二、成塚重弥、川端章夫、丸山隆浩
    • Industrial Property Rights Holder
      富士通株式会社、学校法人名城大学
    • Filing Date
      2006
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Elucidation of growth mechanism of single-walled carbon nanotubes from platinum catalyst by in situ XAFS analysis2023

    • Author(s)
      Shusaku Karasawa, Kamal Sharma, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      第64回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] その場 XAFS 測定による単層カーボンナノチューブ成長中の 鉄族金属触媒の化学状態の解明2023

    • Author(s)
      柄澤 周作, サラマ カマル, 才田 隆広, 成塚 重弥, 丸山 隆浩
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] その場 XAFS 測定による単層カーボンナノチューブ 成長メカニズムの解明: Ir 触媒と Pt 触媒の比較2023

    • Author(s)
      柄澤 周作, サラマ カマル, 才田 隆広, 成塚 重弥, 丸山 隆浩
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] その場 XAFS 測定による単層カーボンナノチューブ成長中の Co 触媒と Ir 触媒の化学状態の比較2022

    • Author(s)
      柄澤 周作,サラマ カマル,才田 隆広,成塚 重弥,丸山 隆浩
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] In situ XAFS analysis of chemical state of catalyst particles during single-walled carbon nanotube growth by chemical vapor deposition2022

    • Author(s)
      Takahiro Maruyama, Shusaku Karasawa, Kamal Prasad Shrama, Shigeya Naritsuka and Takahiro Saida
    • Organizer
      35th International Microprocesses and Nanotechnology Conference (MNC 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] その場 XAFS 測定による単層カーボンナノチューブ 成長メカニズムの解明: Fe 触媒と Ni 触媒の比較2022

    • Author(s)
      柄澤 周作,サラマ カマル,才田 隆広,成塚 重弥,丸山 隆浩
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] In situ XAFS analysis of chemical state of Co catalysts prepared by solution method during single-walled carbon nanotube growth2022

    • Author(s)
      Shusaku Karasawa, Kamal Prasad Sharma, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      The 22nd International Vacuum Congress (IVC-22)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] その場XAFS測定による単層カーボンナノチューブ成長メカニズムの解明: Co触媒とIr触媒の比較2021

    • Author(s)
      柄澤 周作,山本 大貴,サラマ カマル,才田 隆広,成塚 重弥,丸山 隆浩
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] Effect of carrier gas on chemical states of Co catalyst during SWCNT growth: in situ XAFS analysis2021

    • Author(s)
      Shusaku Karasawa, Daiki Yamamoto, Kamal Sharma, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      第62回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] キャリアガスによるSWCNT成長中のCo触媒の化学状態への影響:その場XAFS測定による分析2021

    • Author(s)
      柄澤 周作,山本 大貴,サラマ カマル,才田 隆広,成塚 重弥,丸山 隆浩
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] その場XAFS測定による単層カーボンナノチューブ成長メカニズムの解明:Co触媒とFe触媒の比較2021

    • Author(s)
      柄澤 周作,山本 大貴,サラマ カマル,才田 隆広,成塚 重弥,丸山 隆浩
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] In situ XAFS analysis of growth process of single-walled carbon nanotubes from Co and Fe catalysts2021

    • Author(s)
      S. Karasawa, K. P. Sharma, D. Yamamoto, T. Saida, S. Naritsuka and T. Maruyama
    • Organizer
      The 9th International Symposium on Surface Science~Toward Sustainable Development~ (ISSS-9)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] Synthesis of small-diameter SWCNTs by ACCVD using the period 6 platinum-group elements catalysts2021

    • Author(s)
      Takahiro Maruyama, Kamal Prasad Sharma, Takuya Okada, Daiki Yamamoto, Takahiro Saida, Shigeya Naritsuka
    • Organizer
      International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials (NT21)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] Growth of vertically-aligned and small-diameter single-walled carbon nanotubes by CVD using Ir and Os catalysts2021

    • Author(s)
      T. Maruyama, K. P. Sharma, D. Yamamoto, T. Okada, M. Kobayashi, T. Saida and S. Naritsuka
    • Organizer
      The 9th International Symposium on Surface Science~Toward Sustainable Development~ (ISSS-9)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] Ir触媒を用いたアルコールCVD法によるSiO2/Si基板上単層カーボンナノチューブ成長の成長温度依存性2021

    • Author(s)
      山本大貴,サラマ カマル,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] Co触媒からの単層カーボンナノチューブ生成における キャリアガスの影響:その場XAFS測定による分析2021

    • Author(s)
      丸山 隆浩, 柄澤 周作, 山本 大貴, カマル プラサド サラマ, 才田 隆広, 成塚 重弥
    • Organizer
      2021年日本表面真空学会学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] a面サファイア上のグラフェンのCVD成長メカニズムの検討2020

    • Author(s)
      上田 悠貴   山田 純平   丸山 隆浩   成塚 重弥
    • Organizer
      第58回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Ir触媒を用いたアルコールCVD法による単層カーボンナノチューブ成長のエタノール圧力依存性2020

    • Author(s)
      山本 大貴,サラマ カマル プラマド,才田 隆広,成塚 重弥,丸山 隆浩
    • Organizer
      第81回 応用物理学会 秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] 分子線成長によるNi薄膜の配向性に与える成長温度の効果2020

    • Author(s)
      中島 諒人  樫尾 達也  伊藤 翼  丸山 隆浩  成塚 重弥
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] THzエリプソメトリーを用いたサファイア上グラフェンの電気特性評価2020

    • Author(s)
      鈴木 拓輝  佐藤 希一  藤井 高志  毛利 真一郎  荒木 努  岩本 敏志  佐藤 幸徳  上田 悠貴  成塚 重弥
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] ナノダイヤモンドを用いた多層グラフェンの直接析出成長の低温化に関する検討2020

    • Author(s)
      樫尾 達也  中島 諒人  山田 純平  上田 悠貴  丸山 隆浩  成塚 重弥
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 減圧CVDによるa面サファイア基板上でのグラフェン直接成長 ----- 成長圧力依存性 -----2020

    • Author(s)
      上田 悠貴  山田 純平  丸山 隆浩  成塚 重弥
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 放射光X線を用いたグラフェン析出成長過程のその場観察 - Ni触媒結晶化の効果 -2020

    • Author(s)
      山田 純平  上田 悠貴  丸山 隆浩  成塚 重弥
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] THz分光解析によるグラフェンのバックグランド誘電率の推定2020

    • Author(s)
      藤井 高志  毛利 真一郎  荒木 努  上田 悠貴  成塚 重弥  岩本 敏志
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 抵抗加熱式CZ法による直径6インチ金属Ni単結晶作成2020

    • Author(s)
      高橋 和也  福田 承生  藤井 高志  川又 透  杉山 和正  成塚 重弥
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Synthesis of 3D hybrid Structures composed of Single-walled CNTs and Mesopores Carbon by Chemical Vapor Deposition2020

    • Author(s)
      Aliza Khaniya Sharma   Kamal P Sharma   Takahiro Saida   Shigeya Naritsuka   Takahiro Maruyama
    • Organizer
      第58回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Pt 触媒を用いたアルコール CVD 法による 単層カーボンナノチューブ成長:収率向上に関する検討2020

    • Author(s)
      山本 大貴  サラマ カマル  才田 隆広  成塚 重弥  丸山 隆浩
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 白金族元素を触媒に用いた細径単層カーボンナノチューブの作製2020

    • Author(s)
      丸山隆浩,岡田拓也,サラマ・カマル,才田隆広,成塚重弥
    • Organizer
      2020年日本表面真空学会学術講演会
    • Data Source
      KAKENHI-PROJECT-19H02563
  • [Presentation] Direct precipitation growth of multi-layer graphene using W capping layer -Dependence of growth atmosphere-2020

    • Author(s)
      山田 純平   上田 悠貴   丸山 隆浩   成塚 重弥
    • Organizer
      第58回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 流速支援液相成長を用いたGaNの成長メカニズムの検討2019

    • Author(s)
      成塚重弥  神林大介  丸山隆浩
    • Organizer
      第48回結晶成長国内会議
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Synthesis of Vertically-Aligned Single-Walled Carbon Nanotubes Having Small Diameters by ACCVD Using Ir Catalysts2019

    • Author(s)
      Takahiro Maruyama Takuya Okada Kamal Sharma Tomoko Suzuki Takahiro Saida Shigeya Naritsuka
    • Organizer
      The 20th International Conference on the Science and Application of Nanotubes and Low-Dimensional Materials (NT19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] LIQUID-PHASE GROWTH OF FEW-LAYERED GRAPHENE ON SAPPHIRE SUBSTRATES USING GA MELTS2019

    • Author(s)
      T. Maruyama S. Sawada T. Saida S. Naritsuka
    • Organizer
      19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Improvement of CVD direct growth of graphene using crystal orientation effects of sapphire substrate2019

    • Author(s)
      Y. Ueda J. Yamada T. Maruyama S. Naritsuka
    • Organizer
      International Symposium on Advanced Nanocarbon Materials ~Science Technology and Application
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Ir触媒からの単層カーボンナノチューブ成長:触媒膜厚依存性2019

    • Author(s)
      丸山 隆浩  岡田 拓也  カマル サラマ  鈴木 智子  才田 隆広  成塚 重弥
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Growth of single-walled carbon nanotubes on chemically etched graphene layers by coldwall CVD using Ir catalysts2019

    • Author(s)
      Aliza Khaniya Sharma   Kamal P Sharma   Saeki Mayumi   Saida Takahiro   Naritsuka Shigeya   Maruyama Takahiro
    • Organizer
      第57回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Single-walled carbon nanotubes growth on mesoporous carbon by chemical vapor deposition using Co catalyst2019

    • Author(s)
      Sharma Aliza  サラマ カマル  才田 隆広  成塚 重弥  丸山 隆浩
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 2インチr面サファイア上の高均一単層グラフェンのCVD成長2019

    • Author(s)
      上田 悠貴   山田 純平   丸山 隆浩   成塚 重弥
    • Organizer
      第57回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] In situ XRD measurement of precipitation of multilayer graphene2019

    • Author(s)
      Jumpei Yamada Yuki Ueda Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      第57回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Cu蒸気触媒を用いた減圧CVDによるr面サファイア上のグラフェン直接成長 --- 成長温度依存性 ---2019

    • Author(s)
      上田 悠貴, 山田 純平, 小野 大志, 丸山 隆浩, 成塚 重弥
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] ナノダイヤモンドを用いた析出法によるSiO2/Si基板上への多層グラフェンの直接成長 ~降温速度依存性~2019

    • Author(s)
      樫尾 達也   中島 諒人   山本 大地   丸山 隆浩   成塚 重弥
    • Organizer
      第57回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 分子線エピタキシー法で成長したGaAs系バイセクションレーザの設計と作製2019

    • Author(s)
      石川裕介、荒川亮太、神林大介、成塚重弥、今井大地、宮嶋孝夫
    • Organizer
      第80回応用物理学会秋季学術講演会 (2019 北海道大学 札幌キャンパス)
    • Data Source
      KAKENHI-PROJECT-19H02176
  • [Presentation] Precipitation of multilayer graphene directly on gallium nitride template using W capping layer2019

    • Author(s)
      Jumpei Yamada Yuki Ueda Takahiro Maruyama Shigeya Naritsuka
    • Organizer
      19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 角度分解光電子微細構造法によるC-doped GaNの結晶構造評価2019

    • Author(s)
      熊木 雄貴  成塚 重弥  下村 勝
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] サファイア基板上でのNi薄膜の熱処理結晶化2019

    • Author(s)
      中島諒人  樫尾達也  山田純平  上田悠貴  丸山隆浩  成塚重弥
    • Organizer
      第48回結晶成長国内会議
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Ir触媒を用いた通常型コールドウォールCVD法による単層カーボンナノチューブの垂直配向成長2019

    • Author(s)
      佐伯 檀   カマル サラマ   才田 隆広   成塚 重弥   丸山 隆浩
    • Organizer
      第57回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 減圧CVDによる2インチr面サファイア基板上の単層グラフェンの直接成長2019

    • Author(s)
      上田 悠貴  山田 純平  丸山 隆浩  成塚 重弥
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Pt触媒を用いたアルコールCVD法における単層カーボンナノチューブの成長量増加に向けて2019

    • Author(s)
      山本 大貴   カマル サラマ   才田 隆広   成塚 重弥   丸山 隆浩
    • Organizer
      第57回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] In situ XANES Study on Growth Process of Carbon Nanotubes2019

    • Author(s)
      Takahiro Maruyama Makoto Kumakura Takahiro Saida Shigeya Naritsuka
    • Organizer
      MRS Fall Meeting & Exhibit
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 分子線エピタキシー法で成長したGaAs系バイセクションレーザの設計と作製2019

    • Author(s)
      石川 裕介  荒川 亮太  神林 大介  成塚 重弥  今井 大地  宮嶋 孝夫
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] X-ray in situ observation of graphene precipitating directly on sapphire substrate2019

    • Author(s)
      Shigeya Naritsuka   Jumpei Yamada   Yuki Ueda   Asato Nakashima   Tatsuya Kashio   and Takahiro Maruyama
    • Organizer
      38th Electronic Materials Symposium (EMS-38)
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] ナノダイヤモンドを用いた析出法によるSiO2 /Si基板上への多層グラフェンの直接成長 ~ 降温速度依存性 ~2019

    • Author(s)
      樫尾 達也   中島 諒人   山本 大地   上田 悠貴  山田 純平  丸山 隆浩   成塚 重弥
    • Organizer
      第42回 結晶成長討論会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 電極を用いないサファイア上グラフェンの電気特性測定2019

    • Author(s)
      藤井 高志  毛利 真一郎  荒木 努  上田 悠貴  成塚 重弥  岩本 敏志
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] グラフェンマスクを用いた電解めっきによる銅のリモートエピに関する検討2019

    • Author(s)
      藤原亨介、山本大地、上田悠貴、山田純平、伊藤幹人、丸山隆浩、成塚重弥
    • Organizer
      第47回結晶成長国内会議
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Low-temperature direct growth of graphene on r-plane sapphire using Cu vapor catalyst by CVD2019

    • Author(s)
      Yuki Ueda Jumpei Yamada Taishi Ono Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      19th International Conference on Crystal Growth and Epitaxy (ICCGE-19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] グラフェンマスクを用いたa面GaN低角入射マイクロチャンネルエピタキシーの薄膜化に関する検討2019

    • Author(s)
      竹中 駿、加藤大輔、佐々井耕平、丸山隆浩、成塚重弥
    • Organizer
      第47回結晶成長国内会議
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] サファイア上グラフェンの抵抗率の非接触・非破壊計測2019

    • Author(s)
      藤井 高志, 毛利 真一郎, 荒木 努, 上田 悠貴, 成塚 重弥, 岩本 敏志
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] GaNのリモートエピタキシーに関するトライアル2019

    • Author(s)
      丹羽和希   上田悠貴   山田純平   佐々井耕平   成塚重弥   丸山隆浩
    • Organizer
      第42回 結晶成長討論会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] c面サファイア基板上Ni薄膜の熱処理結晶化のX線回折測定による評価結晶成長討論会2019

    • Author(s)
      中島諒人  樫尾達也  山田純平  上田悠貴  丸山隆浩  成塚重弥
    • Organizer
      第42回 結晶成長討論会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Cu蒸気触媒を用いた減圧CVDによるr面サファイア上のグラフェン直接成長 --- 成長温度依存性 ---2019

    • Author(s)
      成塚 重弥, 中島 諒人, 山田 純平, 上田 悠貴, 丸山 隆浩
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Understanding of Optical Phenomenon in Atomically Thin Two-dimensional Material and its Heterostructures for Novel Application2018

    • Author(s)
      T. Okada, S. Ogawa, T. Fujii, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      ISPlasma2018/IC-PLANTS2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] その場X線回折測定を用いたグラフェン析出成長メカニズムの検討2018

    • Author(s)
      成塚重弥,山田純平 ,上田悠貴 , 竹中 駿
    • Organizer
      新学術領域研究「3D活性サイト科学」第8回成果発表会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] その場XANES測定による単層カーボンナノチューブ成長中のCoおよびNi触媒粒子の分析2018

    • Author(s)
      丸山 隆浩, 熊倉 誠, 才田 隆広, 成塚 重弥
    • Organizer
      第54回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Growth temperature dependence of low-pressure CVD graphene directly grown on r-plane sapphire2018

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Taishi Ono, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      2018 MRS Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Cu蒸気触媒を用いた減圧CVDによるr面サファイア上のグラフェン直接成長 --- 成長温度依存性 ---2018

    • Author(s)
      上田 悠貴, 山田 純平, 小野 大志, 丸山 隆浩, 成塚 重弥
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] In situ synchrotron X-ray diffraction study of direct precipitation of multilayer graphene2018

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Shun Takenaka, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      37th Electronic Materials Symposium (EMS-37)
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Growth pressure dependence of graphene direct growth on r-plane sapphire by low-pressure CVD2018

    • Author(s)
      Y. Ueda, J. Yamada, K. Fujiwara, D. Yamamoto, T. Maruyama, S. Naritsuka
    • Organizer
      ISPlasma2018/IC-PLANTS2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] テラヘルツ時間領域分光法を用いたグラフェンの散乱時間と電気特性測定2018

    • Author(s)
      藤井 高志, 左右田 航平, 毛利 真一郎, 荒木 努, 上田 悠貴, 成塚 重弥, 岩本 敏志
    • Organizer
      第55回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] 窒化ガリウムテンプレート基板上への多層グラフェンの直接析出成長2018

    • Author(s)
      山田 純平、上田 悠貴、山本 大地、藤原 亨介、丸山 隆浩、成塚 重弥
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] High-density Growth of Single-walled Carbon Nanotube at low Temperature by Alcohol Gas Source Method using Co Catalyst2018

    • Author(s)
      T. Okada, S. Ogawa, T. Fujii, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      ISPlasma2018/IC-PLANTS2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] 大気圧流速支援液相成長法によるGaNの成長2018

    • Author(s)
      成塚 重弥、神林 大介
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] In situ synchrotron X-ray diffraction study of precipitation of multilayer graphene from Ni catalyst2018

    • Author(s)
      山田 純平, 上田 悠貴, 竹中 駿, 丸山 隆浩, 成塚 重弥
    • Organizer
      第55回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 減圧CVDによるグラフェンの直接成長 --- サファイア表面の結晶方位の影響 ---2018

    • Author(s)
      上田 悠貴, 山田 純平, 小野 大志, 丸山 隆浩, 成塚 重弥
    • Organizer
      第55回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] 減圧CVDによるr面サファイア上でのグラフェンの直接成長--- 3-Hexyne分圧依存性 ---2018

    • Author(s)
      上田 悠貴、山田 純平、藤原 亨介、山本 大地、丸山 隆浩、成塚 重弥
    • Organizer
      第65回応用物理学会春季学術講演会、早稲田大学西早稲田キャンパス、東京、3月17日-20日
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] In situ synchrotron X-ray diffraction study of precipitation of multilayer graphene from Ni catalyst2018

    • Author(s)
      山田 純平, 上田 悠貴, 竹中 駿, 丸山 隆浩, 成塚 重弥
    • Organizer
      第55回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] その場X線回折測定を用いたグラフェン析出成長メカニズムの検討2018

    • Author(s)
      成塚重弥,山田純平 ,上田悠貴 , 竹中 駿
    • Organizer
      新学術領域研究「3D活性サイト科学」第8回成果発表会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] テラヘルツ時間領域分光法を用いたグラフェンの散乱時間と電気特性測定2018

    • Author(s)
      藤井 高志, 左右田 航平, 毛利 真一郎, 荒木 努, 上田 悠貴, 成塚 重弥, 岩本 敏志
    • Organizer
      第55回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 窒化ガリウムテンプレート基板上への多層グラフェンの直接析出成長2018

    • Author(s)
      山田 純平、上田 悠貴、山本 大地、藤原 亨介、丸山 隆浩、成塚 重弥
    • Organizer
      第65回応用物理学会春季学術講演会、早稲田大学西早稲田キャンパス、東京、3月17日-20日
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] サファイア上グラフェンの抵抗率の非接触・非破壊計測2018

    • Author(s)
      藤井 高志, 毛利 真一郎, 荒木 努, 上田 悠貴, 成塚 重弥, 岩本 敏志
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] r面サファイア上無触媒減圧CVDグラフェン直接成長における成長温度依存性2018

    • Author(s)
      上田 悠貴、山田 純平、小野 大志、丸山 隆浩、成塚 重弥
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 大気圧流速支援液相成長法によるGaNの成長2018

    • Author(s)
      成塚 重弥、神林 大介
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] ナノダイヤモンドを用いた多層グラフェンのSiO2/Si基板上への直接析出成長2018

    • Author(s)
      山本 大地、山田 純平、上田 悠貴、藤原 亨介、丸山 隆浩、成塚 重弥
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] グラフェンマスクを用いたa面GaN低角入射マイクロチャンネルエピタキシーの薄膜化に関する検討2018

    • Author(s)
      竹中 駿、加藤大輔、佐々井耕平、丸山隆浩、成塚重弥
    • Organizer
      第47回結晶成長国内会議
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] ナノダイヤモンドを用いた多層グラフェンのSiO2/Si基板上への直接析出成長2018

    • Author(s)
      山本 大地、山田 純平、上田 悠貴、藤原 亨介、丸山 隆浩、成塚 重弥
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] c面サファイア基板上Ni薄膜の熱処理結晶化のX線回折測定による評価2018

    • Author(s)
      成塚 重弥, 中島 諒人, 山田 純平, 上田 悠貴, 丸山 隆浩
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] ナノダイヤモンドを用いた多層グラフェンのSiO2/Si基板上への直接析出成長――加熱温度依存――2018

    • Author(s)
      山本 大地、山田 純平、上田 悠貴、藤原 亨介、丸山 隆浩、成塚 重弥
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] 減圧CVDによるグラフェンの直接成長 --- サファイア表面の結晶方位の影響 ---2018

    • Author(s)
      上田 悠貴, 山田 純平, 小野 大志, 丸山 隆浩, 成塚 重弥
    • Organizer
      第55回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] r面サファイア上無触媒減圧CVDグラフェン直接成長における成長温度依存性2018

    • Author(s)
      上田 悠貴、山田 純平、小野 大志、丸山 隆浩、成塚 重弥
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Growth pressure dependence of graphene direct growth on r-plane sapphire by low-pressure CVD2018

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      ISPlasma2018/IC-PLANTS2018
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] アルコールCVD法によるIr触媒からの単層カーボンナノチューブ成長2018

    • Author(s)
      藤井 貴之、小川 征悟、岡田 拓也、才田 隆広、成塚 重弥、丸山 隆広
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Graphene direct growth on sapphire2018

    • Author(s)
      Shigeya Naritsuka
    • Organizer
      International Symposium & School on Crystal Growth Fundamentals
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Growth temperature dependence of low-pressure CVD graphene directly grown on r-plane sapphire2018

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Taishi Ono, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      2018 MRS Fall Meeting & Exhibit
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] ナノダイヤモンドを用いた多層グラフェンのSiO2/Si基板上への直接析出成長――加熱温度依存――2018

    • Author(s)
      山本 大地、山田 純平、上田 悠貴、藤原 亨介、丸山 隆浩、成塚 重弥
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] グラフェンマスクを用いた電解めっきによる銅のリモートエピに関する検討2018

    • Author(s)
      藤原亨介、山本大地、上田悠貴、山田純平、伊藤幹人、丸山隆浩、成塚重弥
    • Organizer
      第47回結晶成長国内会議
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] In situ synchrotron X-ray diffraction study of direct precipitation of multilayer graphene2018

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Shun Takenaka, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      37th Electronic Materials Symposium (EMS-37)
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Growth pressure dependence of graphene direct growth on r-plane sapphire by low-pressure CVD2018

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      ISPlasma2018/IC-PLANTS2018, Meijo University, Nagoya, Japan, March 4-9
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 減圧CVDによるr面サファイア上でのグラフェンの直接成長--- 3-Hexyne分圧依存性 ---2018

    • Author(s)
      上田 悠貴、山田 純平、藤原 亨介、山本 大地、丸山 隆浩、成塚 重弥
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Graphene direct growth on sapphire2018

    • Author(s)
      Shigeya Naritsuka
    • Organizer
      International Symposium & School on Crystal Growth Fundamentals
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] XANESによる単層カーボンナノチューブ生成時におけるFe触媒のその場測定2018

    • Author(s)
      熊倉 誠、岡田 拓也、才田 隆広、成塚 重弥、丸山 隆浩
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Understanding of Optical Phenomenon in Atomically Thin Two-dimensional Material and its Heterostructures for Novel Application2018

    • Author(s)
      Takuya Okada, Seigo Ogawa, Takayuki Fujii, Takahiro Saida, Shigeya Naritsuka and Takahiro Maruyama
    • Organizer
      ISPlasma2018/IC-PLANTS2018, Meijo University, Nagoya, Japan, March 4-9
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Low Temperature Synthesis of Single-Wall Carbon Nanotubes from Ru Catalysts by Alcohol Gas Source Method in High Vacuum2017

    • Author(s)
      T. Fujii, T. Okada, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      MRS Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Wキャップ層を用いた直接析出法における低温でのグラフェン核形成に関する検討2017

    • Author(s)
      山田 純平, 上田 悠貴, 山本 大地, 藤原 亨介, 丸山 隆浩, 成塚 重弥
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Fabrication of Single-Walled Carbon nanotube/Graphene Hybrid Structure using Alcohol Catalytic Chemical Vapor Deposition2017

    • Author(s)
      T. Maruyama, R. Ghosh, Y. Iwashige, S. Ogawa, T. Saida, S. Naritsuka, S. Iijima
    • Organizer
      The International Nanotech & NanoScience Conference and Exhibition (Nanotech France 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] パルスメッキによるグラフェン上銅薄膜の作製2017

    • Author(s)
      藤原亨介,山本大地,山田純平,上田悠貴,丸山隆浩,成塚重弥
    • Organizer
      第46回結晶成長国内会議、ホテルコンコルド浜松、静岡、2017年11月27日~11月29日
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Rh触媒を用いた単層カーボンナノチューブ作製時におけるAl2O3バッファ層による生成量増加のメカニズム2017

    • Author(s)
      丸山隆浩,桐林星光,才田隆広,成塚重弥
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] a面およびc面サファイア基板上への無触媒CVDによるグラフェンの直接成長 --- 成長温度依存性 ---2017

    • Author(s)
      上田悠貴,山田純平,藤原亭介,山本大地,丸山隆浩,成塚重弥
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Au-Ni触媒を用いた減圧CVDによる多層グラフェンの均一性向上2017

    • Author(s)
      成塚重弥,上田悠貴, 山田純平, 藤原亨介, 山本大地, 丸山隆浩
    • Organizer
      新学術領域研究「3D活性サイト科学」第5回成果発表会
    • Place of Presentation
      伊豆
    • Year and Date
      2017-03-04
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Direct precipitation growth of multilayer graphene using Ni-Au catalyst2017

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Daichi Yamamoto, Kyosuke Fujiwara, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      第53回フラーレン・ナノチューブ・グラフェン総合シンポジウム,京都大学宇治キャンパス,9月13日-15日
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] u-Ni触媒を用いた減圧CVDによる多層グラフェンの均一性向上2017

    • Author(s)
      成塚重弥,上田悠貴 , 山田純平 , 藤原亨介, 山本大地, 丸山隆浩
    • Organizer
      新学術領域研究「3D活性サイト科学」第5回成果発表会
    • Place of Presentation
      伊豆山研修センター, 静岡
    • Year and Date
      2017-03-04
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Au-Ni触媒CVDによる高い均一性を有する多層グラフェン成長に関する研究2017

    • Author(s)
      上田悠貴 , 山田純平 , 藤原亨介, 山本大地, 丸山隆浩, 成塚重弥
    • Organizer
      第52回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京大学、東京
    • Year and Date
      2017-03-01
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Pulsed current-mode plating of smooth thin copper layer on graphene for fabrication of copper-graphene composite2017

    • Author(s)
      K. Fujiwara, D. Yamamoto, J. Yamada, Y. Ueda, T. Maruyama, S. Naritsuka
    • Organizer
      6th Electronic Materials Symposium (EMS-36)
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Study of Nucleation of Graphene in Direct Precipitation Method2017

    • Author(s)
      J. Yamada, Y. Ueda, D. Yamamoto, K. Fujiwara, T. Maruyama, S. Naritsuka
    • Organizer
      MRS Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Single-Walled Carbon Nanotubes Synthesis by Alcohol Gas Source Method at Low Temperature using Ru Catalysts2017

    • Author(s)
      T. Fujii, T. Okada, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Au-Ni触媒CVDによる高い均一性を有する多層グラフェン成長に関する研究2017

    • Author(s)
      上田悠貴, 山田純平, 藤原亨介, 山本大地, 丸山隆浩, 成塚重弥
    • Organizer
      第52回フラーレン・ナノチューブ・グラフェン総合シンポジウム 平成29年度秀でた利用6大成果 最優秀賞受賞講演
    • Place of Presentation
      東京
    • Year and Date
      2017-03-01
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Wキャップ層を用いた直接析出法における低温でのグラフェン核形成に関する検討2017

    • Author(s)
      山田 純平, 上田 悠貴, 山本 大地, 藤原 亨介, 丸山 隆浩, 成塚 重弥
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜、神奈川
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] パルスメッキによるグラフェン上銅薄膜の作製2017

    • Author(s)
      藤原亨介,山本大地,山田純平,上田悠貴,丸山隆浩,成塚重弥
    • Organizer
      第46回結晶成長国内会議
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Growth Mechanism of Carbon Nanotubes on SiC C-face by Thermal Decomposition2017

    • Author(s)
      T. Maruyama, S. Naritsuka, K. Amemiya, M. Kusunoki
    • Organizer
      International Symposium on Epitaxial Graphene 2017 (ISEG2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Study of direct precipitation mechanism of graphene on sapphire using X-ray diffraction2017

    • Author(s)
      Shigeya Naritsuka, Jumpei Yamada, Yuki Ueda, Daich Yamamoto, Kyosuke Fujiwara, Takahiro Maruyama, Hayato Goto, and Yusuke Wakabayashi
    • Organizer
      Swedish-Japanese Workshop on Nano-Structure Science by Novel Light Sources, Lund, Sweden, October 2-3
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Study of Nucleation of Graphene in Direct Precipitation Method2017

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Daichi Yamamoto, Kyosuke Fujiwara, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      2017 MRS Fall Meeting & Exhibit, Hynes Convention Center, Sheraton Boston Hotel, Boston (USA), November 26-December 1
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] u/Ni触媒を用いた良好な均一性を有する多層グラフェンのCVD成長2017

    • Author(s)
      上田 悠貴, 山田 純平, 藤原 亨介, 山本 大地, 丸山 隆浩, 成塚 重弥
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜、神奈川
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Usage of graphene mask for expanding lateral-growth in GaN low angle incidence microchannel epitaxy2017

    • Author(s)
      Shun Takenaka, Yuki Ueda, Jumpei Yamada, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      36th Electronic Materials Symposium (EMS-36), Nagahama Royal Hotel, Shiga, Nov. 8-10
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Single-Walled Carbon Nanotube Synthesis from Rh Catalysts by Alcohol Gas Source Method2017

    • Author(s)
      T. Maruyama, A. Kozawa, T. Saida, S. Naritsuka, S. Iijima
    • Organizer
      The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] c面およびr面サファイア上のグラフェンCVD成長メカニズムの検討2017

    • Author(s)
      上田悠貴, 山田純平, 藤原亨介, 山本大地, 丸山隆浩, 成塚重弥
    • Organizer
      第46回結晶成長国内会議、ホテルコンコルド浜松、静岡、2017年11月27日~11月29日
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] In Situ XANES Study on Chemical States of Metal Catalysts During SWCNT Growth2017

    • Author(s)
      M. Kumakura, H. Kiribayashi, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      MRS Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Study of condition of copper plating on graphene2017

    • Author(s)
      藤原亭介,山本大地,山田純平,上田悠貴,丸山隆浩,成塚重弥
    • Organizer
      第53回フラーレン・ナノチューブ・グラフェン総合シンポジウム,京都大学宇治キャンパス,9月13日-15日
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Wキャップ層を用いたグラフェン直接析出法におけるAuボトム層の効果2017

    • Author(s)
      山田純平,上田悠貴,山本大地,藤原亭介,丸山隆浩,成塚重弥
    • Organizer
      第78回応用物理学会秋季学術講演会,福岡国際会議場・福岡国際センター・福岡サンパレスホテル,9月5日-8日
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Au/Ni触媒を用いた良好な均一性を有する多層グラフェンのCVD成長2017

    • Author(s)
      上田 悠貴, 山田 純平, 藤原 亨介, 山本 大地, 丸山 隆浩, 成塚 重弥
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      横浜
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Wキャップ層を用いたグラフェン直接析出法におけるAuボトム層の効果2017

    • Author(s)
      山田純平,上田悠貴,山本大地,藤原亭介,丸山隆浩,成塚重弥
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] a面およびc面サファイア基板上への無触媒CVDによるグラフェンの直接成長 --- 成長温度依存性 ---2017

    • Author(s)
      上田悠貴,山田純平,藤原亭介,山本大地,丸山隆浩,成塚重弥
    • Organizer
      第78回応用物理学会秋季学術講演会,福岡国際会議場・福岡国際センター・福岡サンパレスホテル,9月5日-8日
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Study of condition of copper plating on graphene2017

    • Author(s)
      藤原亭介,山本大地,山田純平,上田悠貴,丸山隆浩,成塚重弥
    • Organizer
      第53回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Direct precipitation growth of multilayer graphene using Ni-Au catalyst2017

    • Author(s)
      J. Yamada, Y. Ueda, D. Yamamoto, K. Fujiwara, T. Maruyama, S. Naritsuka
    • Organizer
      第53回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] XANESによる単層カーボンナノチューブ生成時における遷移金属触媒のその場測定2017

    • Author(s)
      熊倉誠,桐林星光,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Dependence on the annealing temperature on precipitation growth of multilayer graphene using nano diamond as a carbon source2017

    • Author(s)
      D. Yamamoto, J. Yamada, Y. Ueda, K. Fujiwara, T. Maruyama, S. Naritsuka
    • Organizer
      6th Electronic Materials Symposium (EMS-36)
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Single-Walled Carbon Nanotube Growth from Platinum-group Metal Catalysts2017

    • Author(s)
      T. Maruyama, H. Kondo, A. Kozawa, T. Fujii, T. Saida, S. Naritsuka, S. Iijima
    • Organizer
      International Conference on Green Chemistry/Engineering and Technologies for Sustainable Development (GCET-2017)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] アルコールCVD法によるRu触媒からの単層カーボンナノチューブの低温成長及び成長機構の検討2017

    • Author(s)
      藤井貴之,小川征悟,岡田拓也,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Usage of graphene mask for expanding lateral-growth in GaN low angle incidence microchannel epitaxy2017

    • Author(s)
      S. Takenaka, Y. Ueda, J. Yamada, T. Maruyama, S. Naritsuka
    • Organizer
      6th Electronic Materials Symposium (EMS-36)
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Fabrication of Single-Walled Carbon nanotube/Graphene Hybrid Structure using Alcohol Catalytic Chemical Vapor Deposition2017

    • Author(s)
      T. Maruyama, R. Ghosh, Y. Iwashige, S. Ogawa, T. Saida, S. Naritsuka, S. Iijima
    • Organizer
      The International Nanotech & NanoScience Conference and Exhibition (Nanotech France 2017), Paris, France, June 28-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] c面およびr面サファイア上のグラフェンCVD成長メカニズムの検討2017

    • Author(s)
      上田悠貴, 山田純平, 藤原亨介, 山本大地, 丸山隆浩, 成塚重弥
    • Organizer
      第46回結晶成長国内会議
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Study of direct precipitation mechanism of graphene on sapphire using X-ray diffraction2017

    • Author(s)
      S. Naritsuka, J. Yamada, Y. Ueda, D. Yamamoto, K. Fujiwara, T. Maruyama, H. Goto, Y. Wakabayashi
    • Organizer
      Swedish-Japanese Workshop on Nano-Structure Science by Novel Light Sources & JSPA Grand-in-Aid for Scientific Research on Innovation Areas “3D Active-Site Science
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Pulsed current-mode plating of smooth thin copper layer on graphene for fabrication of copper-graphene composite2017

    • Author(s)
      Kyosuke Fujiwara1, Daichi Yamamoto, Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      36th Electronic Materials Symposium (EMS-36), Nagahama Royal Hotel, Shiga, Nov. 8-10
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Improvement of crystalline quality of directly grown multilayer graphene by precipitation method using slow cooling and crystalized Ni catalyst2016

    • Author(s)
      S. Naritsuka, J. Yamada, Y. Ueda, K. Fujiwara, D. Yamamoto, T. Maruyama
    • Organizer
      新学術領域研究「3D活性サイト科学」第4回成果発表会
    • Place of Presentation
      大阪
    • Year and Date
      2016-09-10
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Improvement of reproducibility of GaN LAIMCE by MOMBE using a low-pressure microplasma treatment2016

    • Author(s)
      Yasuhiro Kusakabe, Yuichi Nagatsu, Shogo Suzuki, Takahiro Maruyama, Kazuo Shimizu, and Shigeya Naritsuka
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Effect of crystallization of Ni catalyst on low-temperature direct-precipitation of multilayer graphene2016

    • Author(s)
      J. Yamada, Y. Ueda, K. Fujiwara, D. Yamamoto, T. Maruyama, S. Naritsuka
    • Organizer
      第51回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      札幌
    • Year and Date
      2016-09-07
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Improvement of reproducibility of GaN LAIMCE by MOMBE using low-pressure microplasma treatment2016

    • Author(s)
      Yasuhiro Kusakabe, Yuichi Nagatsu, Shogo Suzuki, Takahiro Maruyama, Kazuo Shimizu, and Shigeya Naritsuka
    • Organizer
      16th International Summer School on Crystal Growth
    • Place of Presentation
      Lake Biwa, Shiga, Japan
    • Year and Date
      2016-08-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Two-step growth of graphene directly grown on sapphire substrate by non-catalytic alcohol CVD2016

    • Author(s)
      Y. Ueda, J. Yamada, K. Fujiwara, D. Yamamoto, T. Maruyama, S. Naritsuka
    • Organizer
      第51回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      札幌
    • Year and Date
      2016-09-07
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Effect of crystallization of Ni catalyst on low-temperature direct-precipitation of multilayer graphene2016

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      第51回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      北海道立道民活動センターかでる2・7、札幌
    • Year and Date
      2016-09-07
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Liquid phase growth of few-layer graphene on sapphire substrates using Ga melts2016

    • Author(s)
      T. Maruyama, Y. Yamashita, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Influence of growth temperature on nucleation during non-catalytic alcohol CVD of graphene on sapphire substrate2016

    • Author(s)
      Shigeya Naritsuka, Yuki Ueda, Jumpei Yamada, Kyosuke Fujiwara, Daichi Yamamoto and Takahiro Maruyama
    • Organizer
      新学術領域研究「3D活性サイト科学」第4回成果発表会
    • Place of Presentation
      大阪大学, 大阪
    • Year and Date
      2016-09-10
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] CVD-growth of highly-uniform multilayer graphene using Au/Ni catalyst2016

    • Author(s)
      Yuki Ueda, Junpei Yamada, Itsuka Uchibori, Masashi Horibe, Shinichi Matsuda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      8th International Symposium on Advaced Plasema Science and its Applications for Nitrides and Nanometerials (ISPlasma2016)/8th Intranational Conference on Plasma-Nano Technology & Science (IC-PLANTS2016)
    • Place of Presentation
      Nagoya University, Aichi, Japan
    • Year and Date
      2016-03-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Study of direct growth of mechanism of multiplayer graphene by precipitation method using W capping layer2016

    • Author(s)
      山田純平, 上田悠貴, 丸山隆浩, 成塚重弥
    • Organizer
      The 35th Electronic Materials Symposium (EMS-35)
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      2016-06-06
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] 結晶化Niを用いた析出法における多層グラフェンの低温直接成長2016

    • Author(s)
      山田 純平、上田 悠貴、藤原 享介、山本 大地、丸山 隆浩、成塚 重弥
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 酸化グラフェン上への単層カーボンナノチューブ成長: Pt,Fe,Co触媒の比較2016

    • Author(s)
      小川 征悟、小澤 顕成、桐林 星光、才田 隆広、成塚 重弥、丸山 隆浩
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-02-20
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Direct growth of μm order patterned multi-layer graphene by precipitation method using W capping layer2016

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京大学、東京
    • Year and Date
      2016-02-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] SiC 表面上のエピタキシャルグラフェン上へのBN 成長の検討2016

    • Author(s)
      夏目 拓弥、村部 雅央、才田 隆広、成塚 重弥、丸山 隆浩
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Low-pressure microplasma treatment of GaN surface for improvement of reproducibility of micro-scale growth2016

    • Author(s)
      Y. Kusakabe, Y. Nagatsu, S.Suzuki, S. Naritsuka, T. Maruyama, K. Shimizu
    • Organizer
      ISPlasma2016/IC-PLANTS2016
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-03-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Improvement of reproducibility of GaN LAIMCE by MOMBE using low-pressure microplasma treatment2016

    • Author(s)
      Y. Kusakabe, Y. Nagatsu, S. Suzuki, T. Maruyama, K. Shimizu, S. Naritsuka
    • Organizer
      The 16th International Summer School on Crystal Growth
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      2016-08-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Study of non-catalytic CVD of graphene on sapphire substrate ----- Effect of growth temperature on nucleation -----2016

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Itsuki Uchibori, Masashi Horibe, Shinichi Matsuda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京大学、東京
    • Year and Date
      2016-02-19
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Improvement of crystalline quality of directly grown multilayer graphene by precipitation method using crystallized Ni catalyst2016

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Influence of growth temperature on nucleation during non-catalytic CVD of graphene on sapphire substrate2016

    • Author(s)
      Y. Ueda, J. Yamada, T. Maruyama, S. Naritsuka
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Liquid phase growth of few-layer graphene on sapphire substrates using Ga melts2016

    • Author(s)
      T. Maruyama, Y. Yamashita, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] CVD-growth of highly-uniform multilayer graphene using Au/Ni catalyst2016

    • Author(s)
      Yuki Ueda, Junpei Yamada, Itsuka Uchibori, Masashi Horibe, Shinichi Matsuda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      8th International Symposium on Advaced Plasema Science and its Applications for Nitrides and Nanometerials (ISPlasma2016)
    • Place of Presentation
      Naogya University, Nagoya, Japan
    • Year and Date
      2016-03-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Low-Temperature Direct-Growth of Multilayer Graphene by Precipitation Method Using Crystallized Ni Catalyst2016

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      Materials Research Society Fall Meeting & Exhibit
    • Place of Presentation
      Boston, Massachusetts, USA
    • Year and Date
      2016-11-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Investigation of growth mechanism on non-catalytic CVD growth of graphene on sapphire substrate2016

    • Author(s)
      上田悠貴, 山田純平, 丸山隆浩, 成塚重弥
    • Organizer
      The 35th Electronic Materials Symposium (EMS-35)
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      2016-06-06
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Improvement of crystalline quality of directly grown multilayer graphene by precipitation method using crystallized Ni catalyst2016

    • Author(s)
      J. Yamada, Y. Ueda, K. Fujiwara, D. Yamamoto, T. Maruyama, S. Naritsuka
    • Organizer
      The 16th International Summer School on Crystal Growth
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      2016-08-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Effect of NH3 flow rate on microchannel epitaxy of GaN by liquid phase electroepitaxy using mesa shaped GaN template substrate2016

    • Author(s)
      D. Kambayashi, Y. Mizuno, T. Maruyama, S. Naritsuka
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Two-step growth of graphene directly grown on sapphire substrate by non-catalytic alcohol CVD2016

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      第51回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      北海道立道民活動センターかでる2・7、札幌
    • Year and Date
      2016-09-07
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Microchannel epitaxy2016

    • Author(s)
      Shigeya Naritsuka
    • Organizer
      16th International Summer School on Crystal Growth
    • Place of Presentation
      Lake Biwa, Shiga, Japan
    • Year and Date
      2016-08-01
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Direct growth of patterned multi-layer graphene by precipitation method using patterned W capping layer2016

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      The 50th Fullerenes-Nanotubes-Graphene General Symposium
    • Place of Presentation
      東京大学
    • Year and Date
      2016-02-20
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Growth temperature dependence of non-catalytic CVD growth of graphene on sapphire substrate2016

    • Author(s)
      Y. Ueda, J. Yamada, T. Maruyama, S. Naritsuka
    • Organizer
      58th Electronic Materials Conference
    • Place of Presentation
      Newark, USA
    • Year and Date
      2016-06-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Improvement of GaN regrowth by MOMBE using low pressure nitrogen microplasma2016

    • Author(s)
      Y. Kusakabe, T. Maruyama, S. Naritsuka
    • Organizer
      International Workshop on Nitrides Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] サファイア基板上へのグラェン無触媒 CVDにおける成長時間依存性2016

    • Author(s)
      上田 悠貴, 山田 純平, 内堀 樹, 堀部 真史, 松田 晋一, 丸山 隆浩, 成塚 重弥
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学、東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 結晶化Niを用いた析出法における多層グラフェンの低温直接成長2016

    • Author(s)
      山田 純平、上田 悠貴、藤原 享介、山本 大地、丸山 隆浩、成塚 重弥
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Wキャップ層を用いた析出法により直接成長した多層グラフェンの結晶性向上に関する検討2016

    • Author(s)
      山田純平, 上田悠貴, 丸山隆浩, 成塚重弥
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学、東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Wキャップ層を用いた析出法により直接成長した多層グラフェンの結晶性向上に関する検討2016

    • Author(s)
      山田純平,上田悠貴,丸山隆浩,成塚重弥
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Study of direct growth of mechanism of multiplayer graphene by precipitation method using W capping layer2016

    • Author(s)
      山田純平,上田悠貴,丸山隆浩,成塚重弥
    • Organizer
      35th Electronic Materials Symposium (EMS-35)
    • Place of Presentation
      Laforet Biwako, Shiga
    • Year and Date
      2016-07-06
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Study of non-catalytic CVD of graphene on sapphire substrate ----- Effect of growth temperature on nucleation -----2016

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Itsuki Uchibori, Masashi Horibe, Shinichi Matsuda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      The 50th Fullerenes-Nanotubes-Graphene General Symposium
    • Place of Presentation
      東京大学
    • Year and Date
      2016-02-20
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Improvement of crystalline quality of directly grown multilayer graphene by precipitation method using crystallized Ni catalyst2016

    • Author(s)
      J. Yamada, Y. Ueda, T. Maruyama, S. Naritsuka
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Rh触媒を用いた単層カーボンナノチューブ成長におけるAl2O3バッファ層作製法の検討2016

    • Author(s)
      桐林 星光、小川 征悟、小澤 顕成、才田 隆広、成塚 重弥、丸山 隆浩
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-02-20
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] XANESによるSWNT用Pt触媒の解析2016

    • Author(s)
      熊倉 誠,小澤顕成,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第19回XAFS討論会P-19
    • Place of Presentation
      名古屋
    • Year and Date
      2016-09-03
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Improvement of reproducibility of GaN LAIMCE by MOMBE using a low-pressure microplasma treatment2016

    • Author(s)
      Y. Kusakabe, Y. Nagatsu, S. Suzuki, T. Maruyama, K. Shimizu, S. Naritsuka,
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Improvement of reproducibility of GaN LAIMCE by MOMBE using low-pressure microplasma treatment2016

    • Author(s)
      Yasuhiro Kusakabe, Yuichi Nagatsu, Shogo Suzuki, Takahiro Maruyama, Kazuo Shimizu, and Shigeya Naritsuka
    • Organizer
      16th International Summer School on Crystal Growth
    • Place of Presentation
      Lake Biwa, Shiga, Japan
    • Year and Date
      2016-08-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] CVD-growth of highly-uniform multilayer graphene using Au/Ni catalyst2016

    • Author(s)
      Y. Ueda, J. Yamada, I. Uchibori, M. Horibe, S. Matsuda, T. Maruyama, S. Naritsuka
    • Organizer
      ISPlasma2016/IC-PLANTS2016
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-03-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Rh触媒を用いたアルコールガスソース法による400℃以下での単層カーボンナノチューブ成長2016

    • Author(s)
      小澤 顕成、桐林 星光、小川 征悟、才田 隆広、成塚 重弥、丸山 隆浩
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-02-20
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Influence of growth temperature on nucleation during non-catalytic CVD of graphene on sapphire substratet2016

    • Author(s)
      Yuki Ueda, Jumpei Yamanda, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      16th International Summer School on Crystal Growth
    • Place of Presentation
      Lake Biwa, Shiga, Japan
    • Year and Date
      2016-08-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Direct Growth of Multilayer Graphene as Transparent Electrode on GaN-Based Light Emitting Diode2016

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka, Shigeyoshi Usami, Yoshio Honda and Hiroshi Amano
    • Organizer
      International Workshop on Nitrides Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Boston, Massachusetts, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Direct growth of multilayer graphene as transparent electrode on GaN-based light emitting diode2016

    • Author(s)
      J. Yamada, Y. Ueda, T. Maruyama, S. Naritsuka, S. Usami, Y. Honda, H. Amano
    • Organizer
      International Workshop on Nitrides Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Growth temperature dependence of non-catalytic CVD growth of graphene on sapphire substrate2016

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      58th Electronic Materials Conference
    • Place of Presentation
      Univ. Delaware, Newark, USA
    • Year and Date
      2016-06-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Study of non-catalytic CVD of graphene on sapphire substrate -Effect of growth temperature on nucleation-2016

    • Author(s)
      Y. Ueda, J. Yamada, I. Uchibori, M. Horibe, S. Matsuda, T. Maruyama, S. Naritsuka
    • Organizer
      第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京
    • Year and Date
      2016-02-19
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] SiC表面上のエピタキシャルグラフェン上へのBN成長の検討2016

    • Author(s)
      夏目 拓弥、村部 雅央、才田 隆広、成塚 重弥、丸山 隆浩
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-02-20
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Improvement of crystalline quality of directly grown multilayer graphene by precipitation method using slow cooling and crystalized Ni catalyst2016

    • Author(s)
      Shigeya Naritsuka, Jumpei Yamada, Yuki Ueda, Kyosuke Fujiwara, Daichi Yamamoto and Takahiro Maruyama
    • Organizer
      新学術領域研究「3D活性サイト科学」第4回成果発表会
    • Place of Presentation
      大阪大学, 大阪
    • Year and Date
      2016-09-10
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Wキャップ層を用いた析出法により直接成長した多層グラフェンの結晶性向上に関する検討2016

    • Author(s)
      山田 純平,上田 悠貴,丸山 隆浩,成塚 重弥
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-02-20
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Improvement of crystalline quality of directly grown multilayer graphene by precipitation method using crystallized Ni catalyst2016

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Kyosuke Fujiwara, Daichi Yamamoto, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      16th International Summer School on Crystal Growth
    • Place of Presentation
      Lake Biwa, Shiga, Japan
    • Year and Date
      2016-08-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Low-pressure microplasma treatment of GaN surface for improvement of reproducibility of micro-scale growth2016

    • Author(s)
      Yasuhiro Kusakabe, Yuichi Nagatsu, Shogo Suzuki, Shigeya Naritsuka, Takahiro Maruyama, and Kazuo Sshimizu
    • Organizer
      8th International Symposium on Advaced Plasema Science and its Applications for Nitrides and Nanometerials (ISPlasma2016)
    • Place of Presentation
      Naogya University, Nagoya, Japan
    • Year and Date
      2016-03-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Improvement of GaN Regrowth by MOMBE using Low Pressure Nitrogen Microplasma2016

    • Author(s)
      Yasuhiro Kusakabe, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      International Workshop on Nitrides Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] SiC 表面上のエピタキシャルグラフェン上へのBN 成長の検討2016

    • Author(s)
      夏目 拓弥、村部 雅央、才田 隆広、成塚 重弥、丸山 隆浩
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学、東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Wキャップ層を用いた析出法により直接成長した多層グラフェンの結晶性向上に関する検討2016

    • Author(s)
      山田純平,上田悠貴,丸山隆浩,成塚重弥
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学、東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] その場減圧窒素マイクロプラズマ処理によるMOMBE GaN成長再現性の向上2016

    • Author(s)
      日下部 安宏、丸山 隆浩、清水 一男、成塚 重弥
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Investigation of growth mechanism on non-catalytic CVD growth of graphene on sapphire substrate2016

    • Author(s)
      上田悠貴, 山田純平,丸山隆浩,成塚重弥
    • Organizer
      35th Electronic Materials Symposium (EMS-35)
    • Place of Presentation
      Laforet Biwako, Shiga
    • Year and Date
      2016-07-06
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] サファイア基板上へのグラフェンの無触媒CVDにおける成長時間依存性2016

    • Author(s)
      上田 悠貴、山田 純平、内堀 樹、堀部 真史、松田 晋一、丸山 隆浩、成塚 重弥
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-02-20
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Influence of growth temperature on nucleation during non-catalytic CVD of graphene on sapphire substrate2016

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Improvement of GaN Regrowth by MOMBE using Low Pressure Nitrogen Microplasma2016

    • Author(s)
      Yasuhiro Kusakabe, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      International Workshop on Nitrides Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orlando, Florida, USA
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 無触媒2段階CVD成長によるサファイア基板上への高品質グラフェンの直接成長2016

    • Author(s)
      上田 悠貴、山田 純平、藤原 亨介、山本 大地、丸山 隆浩、成塚 重弥
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Influence of growth temperature on nucleation during non-catalytic alcohol CVD of graphene on sapphire substrate2016

    • Author(s)
      S. Naritsuka, Y. Ueda, J. Yamada, K. Fujiwara, D. Yamamoto, T. Maruyama,
    • Organizer
      新学術領域研究「3D活性サイト科学」第4回成果発表会
    • Place of Presentation
      大阪
    • Year and Date
      2016-09-10
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Improvement of reproducibility of GaN LAIMCE by MOMBE using a low-pressure microplasma treatment2016

    • Author(s)
      Yasuhiro Kusakabe, Yuichi Nagatsu, Shogo Suzuki, Takahiro Maruyama, Kazuo Shimizu, and Shigeya Naritsuka
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] サファイア基板上へのグラェン無触媒 CVDにおける成長時間依存性2016

    • Author(s)
      上田 悠貴 , 山田 純平 , 内堀 樹, 堀部 真史 , 松田 晋一,丸山 隆浩 , 成塚 重弥
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学、東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 無触媒2段階CVD成長によるサファイア基板上への高品質グラフェンの直接成長2016

    • Author(s)
      上田 悠貴、山田 純平、藤原 亨介、山本 大地、丸山 隆浩、成塚 重弥
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Michrochannel epitaxy2016

    • Author(s)
      S. Naritsuka
    • Organizer
      The 16th International Summer School on Crystal Growth
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      2016-08-01
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Direct growth of μm order patterned multi-layer graphene by precipitation method using W capping layer2016

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京大学、東京
    • Year and Date
      2016-02-19
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Influence of growth temperature on nucleation during non-catalytic CVD of graphene on sapphire substrate2016

    • Author(s)
      Y. Ueda, J. Yamada, K. Fujiwara, D. Yamamoto, T. Maruyama, S. Naritsuka
    • Organizer
      The 16th International Summer School on Crystal Growth
    • Place of Presentation
      Shiga, Japan
    • Year and Date
      2016-08-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Effect of NH3 flow rate on Microchannel Epitaxy of GaN by Liquid Phase Electroepitaxy using mesa shaped GaN template substrate2016

    • Author(s)
      Daisuke Kambayashi, Yosuke Mizuno, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] その場減圧窒素マイクロプラズマ処理によるMOMBE GaN成長再現性の向上2016

    • Author(s)
      日下部 安宏、丸山 隆浩、清水 一男、成塚 重弥
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ, 新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Direct growth of μm order patterned multi-layer graphene by precipitation method using W capping layer2016

    • Author(s)
      J. Yamada, Y. Ueda, T. Maruyama, S. Naritsuka
    • Organizer
      第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京
    • Year and Date
      2016-02-19
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] その場減圧窒素マイクロプラズマ処理によるMOMBE GaN成長再現性の向上2016

    • Author(s)
      日下部 安宏、丸山 隆浩、清水 一男、成塚 重弥
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ,新潟
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Microchannel epitaxy2016

    • Author(s)
      Shigeya Naritsuka
    • Organizer
      16th International Summer School on Crystal Growth
    • Place of Presentation
      Lake Biwa, Shiga, Japan
    • Year and Date
      2016-08-01
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] サファイア基板上へのグラェン無触媒 CVDにおける成長時間依存性2016

    • Author(s)
      上田 悠貴, 山田 純平, 内堀 樹, 堀部 真史, 松田 晋一,丸山 隆浩, 成塚 重弥
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Effect of NH3 flow rate on Microchannel Epitaxy of GaN by Liquid Phase Electroepitaxy using mesa shaped GaN template substrate2016

    • Author(s)
      Daisuke Kambayashi, Yosuke Mizuno, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Low-pressure microplasma treatment of GaN surface for improvement of reproducibility of micro-scale growth2016

    • Author(s)
      Yasuhiro Kusakabe, Yuichi Nagatsu, Shogo Suzuki, Shigeya Naritsuka, Takahiro Maruyama, and Kazuo Sshimizu
    • Organizer
      8th International Symposium on Advaced Plasema Science and its Applications for Nitrides and Nanometerials (ISPlasma2016)/8th Intranational Conference on Plasma-Nano Technology & Science (IC-PLANTS2016)
    • Place of Presentation
      Nagoya University, Aichi, Japan
    • Year and Date
      2016-03-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Low-temperature direct-growth of multilayer graphene by precipitation method using crystallized Ni catalyst2016

    • Author(s)
      J. Yamada, Y. Ueda, T. Maruyama, S. Naritsuka
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Year and Date
      2016-11-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Study of non-catalytic CVD of graphene on sapphire substrate -Effect of growth temperature on nucleation-2016

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Itsuki Uchibori, Masashi Horibe, Shinichi Matsuda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      第50回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京大学、東京
    • Year and Date
      2016-02-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] メサ加工基板を用いたLPEE GaNマイクロチャンネルエピタキシー―メサ方向依存性―2015

    • Author(s)
      神林大介、岩川宗樹、水野陽介、白木優子、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Nucleation control of multilayer graphene by precipitation method using diffusion barrier and two-step annealing2015

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Manabu Suzuki, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Au/Ni触媒を用いた高均一な多層グラフェンCVD成長の成長温度依存2015

    • Author(s)
      上田悠貴、山田純平、内堀樹、堀部真史、松田晋一、丸山隆浩、成塚重弥
    • Organizer
      第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      福岡
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Synthesis of Single-Walled Carbon Nanotubes from Rh Catalysts at Low Temperature by Alcohol Gas Source Method in High Vacuum2015

    • Author(s)
      Akinari Kozawa, Hoshimitsu Kiribayashi, Seigo Ogawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      The 49th Fullerenes-Nanotubes-Graphene General Symposium (FNTG)
    • Place of Presentation
      北九州国際会議場
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] MOMBEを用いたGaN再成長界面に与える窒素マイクロプラズマ処理の効果2015

    • Author(s)
      日下部安宏、成塚重弥、丸山隆弘、清水一男
    • Organizer
      第45回結晶成長国内会議
    • Place of Presentation
      北海道大学、北海道
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] NEXAFSその場測定を用いたSiC表面分解法によるカーボンナノチューブ生成初期過程の解明2015

    • Author(s)
      丸山隆浩,成塚重弥,雨宮健太
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] 3Dプリンターを用いた流速支援GaN液相成長のボート設計2015

    • Author(s)
      岩川宗樹、神林大介、水野陽介、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Experimental study of growth mechanism of GaAs microchannel epitaxy2015

    • Author(s)
      Yousuke Mizuno, Masahumi Tomita, Hiroyuki Takakura, Muneki Iwakawa, Daisuke Kambayashi, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      20th American Conference on Crystal Growth and Epitaxy (ACCGE-20)
    • Place of Presentation
      Big Sky, Montana, USA
    • Year and Date
      2015-08-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 2段階アニール析出法による高品質多層グラフェンの合成2015

    • Author(s)
      上田悠貴、鈴木学、山田純平、成塚重弥、丸山隆浩
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、神奈川
    • Year and Date
      2015-03-11
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] アルコールガスソース法によるRh触媒からの単層カーボンナノチューブ成長2015

    • Author(s)
      小澤 顕成、才田 隆広、成塚 重弥、丸山 隆浩
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] GaAsマイクロチャンネルエピタキシーの法線方向成長速度に与える不純物の影響2015

    • Author(s)
      水野陽介、 冨田将史、 神林大介、 高倉宏幸、 岩川宗樹、 白木優子、 丸山隆浩、 成塚重弥
    • Organizer
      第45回結晶成長国内会議
    • Place of Presentation
      北海道大学、札幌、北海道
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] GaAsマイクロチャンネルエピタキシーの法線方向成長速度に与える不純物の影響2015

    • Author(s)
      水野陽介、 冨田将史、 神林大介、 高倉宏幸、 岩川宗樹、 白木優子、 丸山隆浩、 成塚重弥
    • Organizer
      第45回結晶成長国内会議
    • Place of Presentation
      北海道大学、札幌
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Wキャップ層を用いた析出法における多層グラフェンの直接成長2015

    • Author(s)
      山田純平、上田悠貴、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Au/Ni触媒を用いた高均一な多層グラフェンCVD成長の成長温度依存2015

    • Author(s)
      上田悠貴、山田純平、内堀樹、堀部真史、松田晋一、丸山隆浩、成塚重弥
    • Organizer
      第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      北九州国際会議場、福岡
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Microchannel epitaxy of GaN by liquid phase electroepitaxy using mesa-shaped substrate2015

    • Author(s)
      Muneki Iwakawa, Daisuke Kambayashi, Yousuke Mizuno, Hiroyuki Takakura, Masafumi Tomita, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      International Conference on Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Precipitation of high-quality multilayer graphene using alumina barrier and Au capping layers2015

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Manabu Suzuki, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      Naogya University, Nagoya, Japan
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Growth temperature dependence of CVD-growth of highly uniform multilayer grapahene using Au/Ni catalyst2015

    • Author(s)
      Yuki Ueda, Junpei Yamada, Itsuki Uchibori, Masashi Horibe, Shinichi Matsuda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      The 49th Fullerenes-Nanotubes-Graphene General Symposium (FNTG)
    • Place of Presentation
      北九州国際会議場
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Rh触媒を用いたアルコールガスソース法による単層カーボンナノチューブ低温成長2015

    • Author(s)
      小澤顕成,桐林星光,小川征悟,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Wキャップ層を用いた析出法における多層グラフェンの直接成長メカニズムの検討2015

    • Author(s)
      山田純平、鈴木学、上田悠貴、丸山隆浩、成塚重弥
    • Organizer
      第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      北九州国際会議場、福岡
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] メサ加工基板を用いた電流制御型液相成長によるGaNのマイクロチャネルエピタキシー ―メサ膜厚の効果―2015

    • Author(s)
      岩川宗樹、神林大介、水野陽介、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第45回結晶成長国内会議
    • Place of Presentation
      北海道大学、札幌、北海道
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] 3Dプリンターを用いた流速支援GaN液相成長のボート設計2015

    • Author(s)
      岩川宗樹、神林大介、水野陽介、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] メサ加工基板を用いた電流制御型液相成長によるGaNのマイクロチャネルエピタキシー ―メサ膜厚の効果―2015

    • Author(s)
      岩川宗樹、神林大介、水野陽介、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第45回結晶成長国内会議
    • Place of Presentation
      札幌
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] MOMBEを用いたGaN再成長界面に与える窒素マイクロプラズマ処理の効果2015

    • Author(s)
      日下部安宏、成塚重弥、丸山隆弘、清水一男
    • Organizer
      第45回結晶成長国内会議
    • Place of Presentation
      札幌
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Precipitation of High-Quality Multilayer-Graphene Using Al2O3 Barrier and Au Cap Layers2015

    • Author(s)
      Jumpei Yamada, Manabu Suzuki, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      Matereials Research Symposium (MRS) spring Meeting & Exhibit
    • Place of Presentation
      San Fransisco
    • Year and Date
      2015-04-05
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Au/Ni 触媒を用いた CVD 法による高品質多層グラフェン合成のための水素流量の検討2015

    • Author(s)
      上田 悠貴、山田 純平、内堀 樹、堀部 真史、松田 晋一、丸山 隆浩、成塚 重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Wキャップ層を用いた析出法における多層グラフェンの直接成長2015

    • Author(s)
      山田純平、上田悠貴、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth of single-walled carbon nanotubes with narrow chirality distributions from Rh catalysts by alcohol gas source method in high vacuum2015

    • Author(s)
      Akinari Kozawa, Hoshimitsu Kiribayashi, Seigo Ogawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Experimental study of growth mechanism of GaAs microchannel epitaxy2015

    • Author(s)
      Y. Mizuno, M. Tomita, H. Takakura, M. Iwakawa, D. Kambayashi, T. Maruyama, S. Naritsuka
    • Organizer
      20th American Conference on Crystal Growth and Epitaxy (ACCGE-20)
    • Place of Presentation
      Montana, USA
    • Year and Date
      2015-08-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Nucleation control of multilayer graphene by precipitation method using diffusion barrier and two-step annealing2015

    • Author(s)
      Y. Ueda, J. Yamada, M. Suzuki, T. Maruyama, S. Naritsuka
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Microchannel Epitaxy of GaN Layer using Mesa-shaped Substrate by Liquid Phase Electroepitaxy -Mesa Orientation Dependence2015

    • Author(s)
      D. Kambayashi, M. Iwakawa, Y. Mizuno, Y. Shiraki, S. Naritsuka
    • Organizer
      Technical digest of the 6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Shizuoka
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Single-Walled Carbon Nanotube Growth Using Pd Catalyst by Alcohol Gas Source Method in High Vacuum2015

    • Author(s)
      Kiribayashi, S. Ogawa, A. Kozawa, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      28th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Toyama International Conference Center
    • Year and Date
      2015-11-10
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] メサ加工基板を用いた電流制御型液相成長によるGaNのマイクロチャネルエピタキシー ―メサ膜厚の効果―2015

    • Author(s)
      岩川宗樹、神林大介、水野陽介、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第45回結晶成長国内会議
    • Place of Presentation
      北海道大学、北海道
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Al_2O_3バリア層、Auキャップ層を用いた析出法における 高品質多層グラフェン生成に与えるアニール時間の効果2015

    • Author(s)
      山田純平、鈴木学、上田悠貴、丸山隆浩、成塚重弥
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、神奈川
    • Year and Date
      2015-03-11
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] メサ加工基板を用いたLPEE GaNマイクロチャンネルエピタキシー ―メサ方向依存性―2015

    • Author(s)
      神林大介、岩川宗樹 、水野陽介、白木優子 、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Alcohol catalytic CVD synthesis of small-diameter single-walled carbon nanotubes from Pt catalysts2015

    • Author(s)
      Takahiro Maruyama, Fusashi Ikuta, Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Yoko Iizumi, Toshiya Okazaki, Sumio Iijima
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Microchannel epitaxy of GaN by liquid phase electroepitaxy using mesa-shaped substrate2015

    • Author(s)
      Muneki Iwakawa, Daisuke Kambayashi, Yousuke Mizuno, Hiroyuki Takakura, Masafumi Tomita, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      International Conference on Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijin, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Au/Ni 触媒を用いた CVD 法による高品質多層グラフェン合成のための水素流量の検討2015

    • Author(s)
      上田 悠貴、山田 純平、内堀 樹、堀部 真史、松田 晋一、丸山 隆弘、成塚 重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Single-walled carbon nanotube growth on graphene oxide using Pt catalysts by alcohol gas source method2015

    • Author(s)
      Seigo Ogawa, Akinari Kozawa, Hoshimitsu Kiribayashi, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Wキャップ層を用いた析出法における多層グラフェンの直接成長2015

    • Author(s)
      山田純平、上田悠貴、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Al_2O_3バリア層、Auキャップ層を用いた析出法よる高品質多層グラフェンの生成2015

    • Author(s)
      成塚重弥、山田純平、鈴木学、上田悠貴、丸山隆浩
    • Organizer
      新学術領域研究「3D活性サイト科学」成果報告会
    • Place of Presentation
      国際高等研究所、京都府
    • Year and Date
      2015-03-14
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Microchannel Epitaxy of GaN Layer using Mesa-shaped Substrate by Liquid Phase Electroepitaxy &#8211; Mesa Orientation Dependence2015

    • Author(s)
      Daisuke Kambayashi, Muneki Iwakawa, Yosuke Mizuno, Yuko Shiraki, and Shigeya Naritsuka
    • Organizer
      6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Act City Hamamatsu, Shizuoka, Japan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] 3Dプリンターを用いた流速支援GaN液相成長のボート設計2015

    • Author(s)
      岩川宗樹、神林大介、水野陽介、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Precipitation of high-quality multilayer-graphene using Al2O3 barrier and Au cap layers2015

    • Author(s)
      Jumpei Yamada, Manabu Suzuki, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      Materials Research Society Fall Meeting & Exhibit
    • Place of Presentation
      Boston, Massachusetts, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Microchannel epitaxy of GaN by liquid phase electroepitaxy using mesa-shaped substrate2015

    • Author(s)
      Muneki Iwakawa, Daisuke Kambayashi, Yousuke Mizuno, Hiroyuki Takakura, Masafumi Tomita, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      International Conference on Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Al_2O_3バリア層、Auキャップ層を用いた高品質多層グラフェンの析出法におけるアニール温度依存性2015

    • Author(s)
      山田純平, 鈴木学, 上田悠貴, 丸山隆弘, 成塚重弥
    • Organizer
      第48回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京大学、東京
    • Year and Date
      2015-02-23
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Au/Ni 触媒を用いた CVD 法による高品質多層グラフェン合成のための水素流量の検討2015

    • Author(s)
      上田 悠貴、山田 純平、内堀 樹、堀部 真史、松田 晋一、丸山 隆弘、成塚 重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Precipitation of high-quality multilayer graphene using alumina barrier and Au capping layers2015

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Manabu Suzuki, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Experimental study of growth mechanism of GaAs microchannel epitaxy2015

    • Author(s)
      Yousuke Mizuno, Masahumi Tomita, Hiroyuki Takakura, Muneki Iwakawa, Daisuke Kambayashi, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      20th American Conference on Crystal Growth and Epitaxy (ACCGE-20)
    • Place of Presentation
      Big Sky, Montana, USA
    • Year and Date
      2015-08-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Nucleation control of multilayer graphene by precipitation method using diffusion barrier and two-step annealing2015

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Manabu Suzuki, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      Naogya University, Nagoya, Japan
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] MOMBEによるa面GaNの低角入射マイクロチャンネルエピタキシー2015

    • Author(s)
      日下部安宏、丸山隆浩、成塚重弥、清水一男、金田省吾
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] CNT formation process from 6H-SiC (000-1)2015

    • Author(s)
      Takahiro Maruyama, Yasuyuki Kawamura, Hyungjin Bang, Naomi Fujita, Tomoyuki Shiraiwa, Kenji Tanioku, Yoko Hozumi, Shigeya Naritsukal, and Michiko Kusunoki
    • Organizer
      Materials Research Society Fall Meeting & Exhibit
    • Place of Presentation
      Boston, Massachusetts, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Microchannel Epitaxy of GaN Layer using Mesa-shaped Substrate by Liquid Phase Electroepitaxy &#8211; Mesa Orientation Dependence2015

    • Author(s)
      Daisuke Kambayashi, Muneki Iwakawa, Yosuke Mizuno, Yuko Shiraki, and Shigeya Naritsuka
    • Organizer
      6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Act City, Hamamatsu, Shizuoka
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Nucleation control of multilayer graphene by precipitation method using diffusion barrier and two-step annealing2015

    • Author(s)
      Yuki Ueda, Jumpei Yamada, Manabu Suzuki, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Microchannel Epitaxy of GaN Layer using Mesa-shaped Substrate by Liquid Phase Electroepitaxy -Mesa Orientation Dependence2015

    • Author(s)
      Daisuke Kambayashi, Muneki Iwakawa, Yosuke Mizuno, Yuko Shiraki, and Shigeya Naritsuka
    • Organizer
      6th International Symposium on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Hamamatsu, Shizuoka, Jpan
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Precipitation of high-quality multilayer graphene using alumina barrier and Au capping layers2015

    • Author(s)
      J. Yamada, Y. Ueda, M. Suzuki, T. Maruyama, S. Naritsuka
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] 低エタノール圧力下におけるPt触媒からの単層カーボンナノチューブ生成過程の解明2015

    • Author(s)
      小澤顕成,桐林星光,小川征悟,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第45回結晶成長国内会議(NCCG-45)
    • Place of Presentation
      北海道大学
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Wキャップ層を用いた析出法における多層グラフェンの直接成長メカニズムの検討2015

    • Author(s)
      山田純平、鈴木学、上田悠貴、丸山隆浩、成塚重弥
    • Organizer
      第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      福岡
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Study of dicrect growth mechanism of multi-layer graphene by precipitation method using W capping layer2015

    • Author(s)
      Junpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      The 49th Fullerenes-Nanotubes-Graphene General Symposium (FNTG)
    • Place of Presentation
      北九州国際会議場
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] GaAsマイクロチャンネルエピタキシーの法線方向成長速度に与えるSiドーピングの効果2015

    • Author(s)
      水野陽介、冨田将史、神林大介、高倉宏幸、岩川宗樹、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Single-walled carbon nanotube growth on Al2Ox/Pd/Al2Ox multilayer catalyst using alcohol gas source method2015

    • Author(s)
      Hoshimitsu Kiribayahsi, Akinari Kozawa, Seigo Ogawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Single-Walled Carbon Nanotubes Synthesis using Al2Ox/Pd/Al2Ox Multilayer Catalysts by Alcohol Gas Source Method in High Vacuum2015

    • Author(s)
      Hoshimitsu Kiribayashi, Akinari Kozawa, Seigo Ogawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      The 49th Fullerenes-Nanotubes-Graphene General Symposium (FNTG)
    • Place of Presentation
      北九州国際会議場
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Single-Walled Carbon Nanotube Growth at Low Temperature from Rh Catalysts by Alcohol Gas Source Method2015

    • Author(s)
      Akinari Kozawal, Hoshimitsu Kiribayashi, Seigo Ogawa, Takahiro Saida, Shigeya Naritsuka, and Takahiro Maruyama
    • Organizer
      Materials Research Society Fall Meeting & Exhibit
    • Place of Presentation
      Boston, Massachusetts, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Wキャップ層を用いた析出法における多層グラフェンの直接成長メカニズムの検討2015

    • Author(s)
      山田純平、鈴木学、上田悠貴、丸山隆浩、成塚重弥
    • Organizer
      第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      北九州国際会議場、福岡
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] Precipitation of high-quality multilayer-graphene using Al_2O_3 barrier and Aucap layers2015

    • Author(s)
      Jumpei Yamada, Manabu Suzuki, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      Materials Research Society Fall Meeting & Exhibit
    • Place of Presentation
      Boston, Massachusetts, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Precipitation of high-quality multilayer graphene using alumina barrier and Au capping layers2015

    • Author(s)
      Jumpei Yamada, Yuki Ueda, Manabu Suzuki, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      The Sixteenth International Conference on the Science and Application of Nanotubes (NT15)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2015-06-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] “Rh触媒を用いたアルコールCVD法による単層カーボンナノチューブ成長2015

    • Author(s)
      小澤顕成,桐林星光,小川征悟,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第45回結晶成長国内会議(NCCG-45)
    • Place of Presentation
      北海道大学
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Au/Ni触媒を用いた高均一な多層グラフェンCVD成長の成長温度依存2015

    • Author(s)
      上田悠貴、山田純平、内堀樹、堀部真史、松田晋一、丸山隆浩、成塚重弥
    • Organizer
      第49回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      北九州国際会議場、福岡
    • Year and Date
      2015-09-07
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Microchannel epitaxy of GaN by liquid phase electroepitaxy using mesa-shaped substrate2015

    • Author(s)
      M. Iwakawa, D. Kambayashi, Y. Mizuno, H. Takakura, M. Tomita, T. Maruyama, S. Naritsuka
    • Organizer
      International Conference on Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] GaAsマイクロチャンネルエピタキシーの法線方向成長速度に与えるSiドーピングの効果2015

    • Author(s)
      水野陽介、冨田将史、神林大介、高倉宏幸、岩川宗樹、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] MOMBEによるa面GaNの低角入射マイクロチャンネルエピタキシー2015

    • Author(s)
      日下部安宏、丸山隆浩、成塚重弥、清水一男、金田省吾
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03558
  • [Presentation] GaAsマイクロチャンネルエピタキシーの法線方向成長速度に与えるSiドーピングの効果2015

    • Author(s)
      水野陽介、冨田将史、神林大介、高倉宏幸、岩川宗樹、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Wキャップ層を用いた析出法における多層グラフェンの直接成長2015

    • Author(s)
      山田純平、上田悠貴、丸山隆浩、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Single-Walled Carbon Nanotube Growth at Low Temperature from Rh Catalysts by Alcohol Gas Source Method2015

    • Author(s)
      Akinari Kozawa, Hoshimitsu Kiribayashi, Seigo Ogawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      Materials Research Society (MRS) Fall Meeting
    • Place of Presentation
      Boston
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Precipitation of high-quality multilayer-graphene using Al2O3 barrier and Au cap layers2015

    • Author(s)
      J. Yamada, M. Suzuki, Y. Ueda, T. Maruyama, S. Naritsuka
    • Organizer
      Abstract of Materials Research Society Fall Meeting & Exhibit, Boston
    • Place of Presentation
      Boston, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Precipitation of high-quality multilayer-graphene using Al2O3 barrier and Au cap layers2015

    • Author(s)
      Jumpei Yamada, Manabu Suzuki, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      Materials Research Society (MRS) Fall Meeting
    • Place of Presentation
      Boston
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] GaAsマイクロチャンネルエピタキシーの法線方向成長速度に与える不純物の影響2015

    • Author(s)
      水野陽介、冨田将史、神林大介、高倉宏幸、岩川宗樹、白木優子、丸山隆浩、成塚重弥
    • Organizer
      第45回結晶成長国内会議
    • Place of Presentation
      札幌
    • Year and Date
      2015-10-19
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] CVD Synthesis of Single-Walled Carbon Nanotubes from Rh catalysts using Alcohol Gas Source Method2015

    • Author(s)
      A. Kozawa, T. Saida, S. Naritsuka, T. Maruyama
    • Organizer
      9th International Conference on New Diamond and Nano Carbons 2015 (NDNC2015)
    • Place of Presentation
      静岡県コンベンションアーツセンター
    • Year and Date
      2015-05-24
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Au/Ni 触媒を用いた CVD 法による高品質多層グラフェン合成のための水素流量の検討2015

    • Author(s)
      上田 悠貴、山田 純平、内堀 樹、堀部 真史、松田 晋一、丸山隆弘、成塚 重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] メサ加工基板を用いたLPEE GaNマイクロチャンネルエピタキシー ―メサ方向依存性―2015

    • Author(s)
      神林大介、岩川宗樹 、水野陽介、白木優子 、成塚重弥
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場、愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] メタンを炭素源に用いたPt触媒からの単層カーボンナノチューブ成長2014

    • Author(s)
      河合赳,成塚重弥,丸山隆浩
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Growth of high-quality multi-layer graphene by precipitation method using diffusion barrier and two step annealing2014

    • Author(s)
      Yuki Ueda, Manabu Suzuki, Junpei Yamada, Shigeya Naritsuka, and Takahiro Maruyama
    • Organizer
      第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      名古屋大学、愛知
    • Year and Date
      2014-09-03
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 配線応用に向けたグラフェン成長技術の動向2014

    • Author(s)
      成塚 重弥
    • Organizer
      日本学術振興会 産学協力研究委員会 半導体界面制御技術第154委員会 第93回研究会
    • Place of Presentation
      キャンパス・イノベーションセンター(CIC) (東京都港区)
    • Year and Date
      2014-11-05
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] アルコールガスソース法によるPd触媒からの単層カーボンナノチューブ成長2014

    • Author(s)
      小澤顕成,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学札幌キャンパス
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Study on Syntesis of Single-Walled Carbon Nanotubes from Pt catalysts by Gas Soruce Method using Ethanol in High Vacuum2014

    • Author(s)
      H. Kondo, R. Ghosh, S. Naritsuka, T. Maruyama
    • Organizer
      ISPlasma2014/IC-PLANTS2014
    • Place of Presentation
      名城大学天白キャンパス
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] MOMBEを用いたGaN初期成長に与えるN_2マイクロプラズマ処理の効果2014

    • Author(s)
      鈴木陽平, 内山翔太, 丸山隆浩, 成塚重弥, 清水一男, 野間悠太, 金田省吾
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      2014-03-20
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Au, Al_2O_3バリア層を用いたグラフェン析出法における核形成制御2014

    • Author(s)
      山田純平, 鈴木学, 上田悠貴, 成塚重弥, 丸山隆弘
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、北海道
    • Year and Date
      2014-09-18
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Synthesis of Multi-layer Graphene for Wiring Application by Precipitation Method using Hybrid Diffusion Barrier Layer2014

    • Author(s)
      Manabu Suzuki, Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      名古屋大学、愛知
    • Year and Date
      2014-09-02
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Selective growth of GaN by Liquid Phase Electroepitaxy using Al2O3 mask2014

    • Author(s)
      H. Takakura, M. Tomita, D. Kambayashi, M. Iwakawa, Y. Misuno, J. Yamada, S. Naritsuka, and T. Maruyama
    • Organizer
      6th Int. Symp. Advanced Plasma Sci. and its Appl. for Nitrides and Nanomaterials, 7th Int. Con. On Plasma-Nano Tech. & Sci.
    • Place of Presentation
      Nagoya, Japan
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Nucleation control of graphene in precipitation method by the use of Al203 barrier and Au capping layers2014

    • Author(s)
      Jnmpei Yamada, Manabu Suzuki, Yuki Ueda, Shigeya Naritsuka, and Takahiro Maruyama
    • Organizer
      第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      名古屋大学、愛知
    • Year and Date
      2014-09-02
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] GaAs MCEにおけるステップ源である積層欠陥からの2次元核の生成2014

    • Author(s)
      冨田将史,高倉宏幸,岩川宗樹,水野陽介,山田純平,神林大介,成塚重弥,丸山隆浩
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] 配線応用に向けたグラフェン成長技術の動向2014

    • Author(s)
      成塚重弥
    • Organizer
      日本学術振興会 産学協力研究委員会 半導体界面制御技術第154委員会 第93回研究会
    • Place of Presentation
      キャンパス・イノベーションセンター(CIC)東京、東京
    • Year and Date
      2014-11-05
    • Description
      【発表確定】
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 酸化アルミニウムマスクを用いた電流制御型液相成長によるGaN選択成長2014

    • Author(s)
      高倉宏幸,冨田将史,神林大介,岩川宗樹,水野陽介,山田純平,成塚重弥,丸山隆浩
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] コールドウォールCVD法によるPt触媒からの単層カーボンナノチューブ成長2014

    • Author(s)
      澤木祐哉,中島佑太,成塚重弥,丸山隆浩
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Al_2O_3バリア層を用いた析出法による多層グラフェンの作製2014

    • Author(s)
      鈴木学, 山田純平, 上田悠貴, 成塚重弥, 丸山隆浩
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、北海道
    • Year and Date
      2014-09-19
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth of Single-Walled Carbon Nanotubes from Pt Catalysts by Hot-Filament Assited Chemical Vapor Deposition2014

    • Author(s)
      Y. Sawaki, Y. Nakashima, S. Naritsuka, T. Maruyama
    • Organizer
      ISPlasma2014/IC-PLANTS2014
    • Place of Presentation
      名城大学天白キャンパス
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] a-C層を挿入したNi触媒を用いた多層グラフェンのアルコールCVD2014

    • Author(s)
      鈴木学, 鬼頭祐典, 早川直邦, 成塚重弥, 丸山隆浩
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      2014-03-17
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] a-C層を挿入したNi触媒を用いた多層グラフェンのアルコールCVD2014

    • Author(s)
      鈴木学,鬼頭祐典,早川直邦,成塚重弥,丸山隆浩
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] アルコールガスソース法におけるPt触媒からの単層カーボンナノチューブ成長メカニズムの検討2014

    • Author(s)
      近藤弘基,Ghosh Ranajit,成塚重弥,丸山隆浩
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] a-C層を挿入したNi触媒を用いた多層グラフェンのアルコールCVD2014

    • Author(s)
      鈴木学, 鬼頭祐典, 早川直邦, 成塚重弥, 丸山隆浩
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      2014-03-17
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOMBEを用いたGaN初期成長に与えるN2マイクロプラズマ処理の効果2014

    • Author(s)
      鈴木陽平,内山翔太,丸山隆浩,成塚重弥,清水一男,野間悠太,金田省吾
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Low temperature selective growth of c-plane GaN using a Ti mask by RF-MBE2013

    • Author(s)
      Nao yamamoto,Hironao Kato,Yujiro Hirota,Hiromu Iha,Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      31th Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Laroret Biwako, Shiga
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Liquid-Phase Electroepitaxy of GaN at atmospheric pressure using ammonia and Ga-Ge solution2013

    • Author(s)
      D. Kanbayashi, T. Hishida, M. Tomita, H. Takakura, T. Maruyama and S. Naritsuka
    • Organizer
      25th Interanational Conference on Indium Phoshide and Related Maerials
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] 二段階成長を用いたLAIMCEによるa面GaNの合体平坦化2013

    • Author(s)
      鈴木 陽平,内山 翔太,丸山 隆浩,成塚 重弥
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] c-plane GaN selective growth by liquid phase electroepitaxy under atmospheric pressure2013

    • Author(s)
      Shigeya Naritsuka, Daisuke Kambayashi, Hiroyuki Takakura, Masafumi Tomita, Takahiro Maruyama
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] GaAsマイクロチャンネルエピタキシーにおける マスクパターン形状による過飽和度制御2013

    • Author(s)
      冨田将史,高倉宏幸,岩川宗樹,水野陽介,山田純平,菱田武重,神林大介,成塚重弥
    • Organizer
      第74回応用物理学会周期学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Comparative study of selective growth of GaAs on Ti, SiO2, and graphene masks by molecular beam epitaxy2013

    • Author(s)
      H. Iha, Y. Hirota, Y. Shirai, T. Iwatsuki, H. Kato, N. Yamamoto, S. Naritsuka and T. Maruyama
    • Organizer
      31th Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Laroret Biwako, Shiga
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Selective growth of (0 0 1) GaAs using patterned graphene mask2013

    • Author(s)
      Yujirou Hirota, Yuya Shirai, Hiromu Iha, Yusuke Kito, Manabu Suzuki, Hironao Kato, Nao Yamamoto, Takahiro Maruyama and Shigeya Naritsuka
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] GaN超低角入射マイクロチャンネルエピタキシーに関する基礎的検討2013

    • Author(s)
      加藤 浩直,山本 菜緒,廣田 雄二郎,伊覇 広夢,成塚 重弥,丸山 隆浩
    • Organizer
      第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Carbon Nanotube/n-type SiC Heterojunction by Surface Decomposition of SiC: Growth and Electric Property2013

    • Author(s)
      Takatoshi Yajima, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      2013MRS Fall Meeting
    • Place of Presentation
      Boston, MA, USA
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] SiC表面分解法による4H-SiC上へのCNT形成とCNT/4H-SiCヘテロ界面の電気的特性2013

    • Author(s)
      矢嶋孝敏,成塚重弥,丸山隆浩
    • Organizer
      第60回応用物理学会春季学術講演会27p-G12-16
    • Place of Presentation
      神奈川工科大学(神奈川県厚木市)
    • Year and Date
      2013-03-27
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Behavior of Defects in a-Plane GaN Films Grown by Low-Angle-Incidence Microchannel Epitaxy (LAIMCE)2013

    • Author(s)
      Noriyuki Kuwano, Yuki Ryu, Masatoshi Mitsuhara, Chia-Hung Lin, Shota Uchiyama, Takahiro Maruyama, Yohei Suzuki and Shigeya Naritsuka
    • Organizer
      17th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Single-Walled Carbon Nanotube Growth with Narrow Diameter Distribution from Pt catalysts by alcohol gas source method2013

    • Author(s)
      Hiroki Kondo, Ranajit Ghosh, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijima
    • Organizer
      2013MRS Fall Meeting
    • Place of Presentation
      Boston, MA, USA
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Ni触媒を用いたアルコールCVD法による多層グラフェンの成長2013

    • Author(s)
      鈴木学,鬼頭佑典, 早川直邦, 成塚重弥, 丸山隆浩
    • Organizer
      第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Selective growth of (001) GaAs with graphene mask2013

    • Author(s)
      Yujiro Hirota and Shigeya Naritsuka
    • Organizer
      15th Interanational Summer School on Crystal Growth
    • Place of Presentation
      Gdansk, Poland
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Low temperature synthesis and growth mechanism of single-walled carbon nanotubes from Pt catalysts in the alcohol gas source method2013

    • Author(s)
      Hiroki Kondo, Naoya Fukuoka, Shigeya Naritsuka, and Takahiro Maruyama
    • Organizer
      The 14th International Conference on the Science and Application of Nanotubes (NT13)
    • Place of Presentation
      Finland
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] EB 蒸着法により作製したPt 触媒を用いた 高真空アルコールガスソース法によるSWNT 低温成長2013

    • Author(s)
      近藤 弘基, Ranajit Ghosh, 成塚 重弥, 丸山 隆浩, 飯島 澄男
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Ni触媒を用いたアルコールCVD法による多層グラフェンの成長2013

    • Author(s)
      鈴木学, 鬼頭佑典, 早川直邦, 成塚重弥, 丸山隆浩
    • Organizer
      第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター、長野
    • Year and Date
      2013-11-07
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Low-temperature single-walled carbon nanotubes synthesis from Pt catalysts in the alcohol gas source method and its growth mechanism2013

    • Author(s)
      Hiroki Kondo, Ranajit Ghosh, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijima
    • Organizer
      第45回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      大阪大学大阪大学会館
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] tudy of abnormal growth in (100) GaAs microchannel epitaxy –Effect of mask pattern–2013

    • Author(s)
      M.Tomita,H.Takakura,T.Hishida,D.Kanbayashi,S.Naritsuka andT.Maruyama
    • Organizer
      31th Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Laroret Biwako, Shiga
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] グラフェンマスク上のGaAs MBE選択成長メカニズムの検討2013

    • Author(s)
      廣田雄二郎, 伊覇広夢, 鬼頭佑典, 鈴木学, 加藤浩直, 山本菜緒, 丸山隆浩, 成塚重弥
    • Organizer
      第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター、長野
    • Year and Date
      2013-11-07
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] タングステマクを用いた電流制御型液相成長によるGaNGaN選択成長2013

    • Author(s)
      高倉宏幸,神林大介,冨田将史,成塚重弥,丸山隆浩
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] GaN 横方向成長を目指したタングステンマスクによる電流制御型液相成長2013

    • Author(s)
      高倉宏幸,冨田将史,神林大介,岩川宗樹,水野陽介,山田純平,成塚重弥,丸山隆浩
    • Organizer
      第74回応用物理学会周期学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] グラフェンマスク上のGaAs MBE選択成長メカニズムの検討2013

    • Author(s)
      廣田雄二郎, 伊覇広夢, 鬼頭佑典, 鈴木学, 加藤浩直, 山本菜緒, 丸山隆浩, 成塚重弥
    • Organizer
      第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] GaAsマイクロチャンネルエピタキシーにおける マスクパターン形状による過飽和度制御2013

    • Author(s)
      冨田将史,高倉宏幸,岩川宗樹,水野陽介,山田純平,菱田武重,神林大介,成塚重弥
    • Organizer
      第43回結晶成長国内会議(NCCG-43)
    • Place of Presentation
      長野市生涯学習センター
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Property of carbon nanotube/SiC heterojunctions formed by surface decomposition of SiC2013

    • Author(s)
      Takahiro Maruyama, Takatoshi Yajima, Satoshi Sakakibara, Shigeya Naritsuka
    • Organizer
      The 14th International Conference on the Science and Application of Nanotubes (NT13)
    • Place of Presentation
      Finland
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Ishii, T. Ohta, NEXAFS study on carbon nanotube growth by surface decomposition of SiC2012

    • Author(s)
      T. Maruyama, S. Sakakibara, Y. Ishiguro, S.Naritsuka, K. Amemiya, H.
    • Organizer
      The Annual World Conference on Carbon (Carbon 2012), 497
    • Place of Presentation
      Auditorium Maximum, Krakow, Porland
    • Year and Date
      2012-06-18
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] SiC表面分解法によるカーボンナノチューブ成長における昇温速度の影響2012

    • Author(s)
      石黒祐樹,榊原聡,伊藤宏晃,矢嶋孝敏,成塚重弥,丸山隆浩
    • Organizer
      第59回応用物理学関係連合講演会15a-A3-4、早稲田大学
    • Place of Presentation
      東京都新宿区
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] 高分解能光電子分光によるCNT/SiC界面バンドアライメントの研究2012

    • Author(s)
      榊原悟史, 丸山隆浩, 成塚重弥, 山根宏之, 小杉信博
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] NH_3-MOMBEによるa面GaN低角入射マイクロチャンネルエピタキシー(2)~成長時間依存性~2012

    • Author(s)
      内山翔太, 林家弘, 丸山隆浩, 成塚重弥
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] グラフェンの性質、作製および配線材への応用2012

    • Author(s)
      成塚重弥
    • Organizer
      平成24年度「夢の材料グラフェンの新技術・新商品・新事業を考える研究会」
    • Place of Presentation
      MSAT 名古屋
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Effect of Growth Temperature on Growth Rate in Carbon Nanotube Formation by Surface Decomposition of SiC2012

    • Author(s)
      Takatoshi Yajima, Satoshi Sakakibara, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      第43回フ ラーレン・ナノチューブ・グラフェン総 合シンポジウム 1P-37、東北大学百周年記念会館
    • Place of Presentation
      川内萩ホール(仙台)
    • Year and Date
      2012-09-05
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Low angle incidence microchannel epitaxy of a-plane GaN grown by ammonia-based metal-organic molecular beam epitaxy --- Optimization of [NH3] / [TMG] ratio ---2012

    • Author(s)
      Shigeya Naritsuka
    • Organizer
      54th Annual Electronic Materials Conference
    • Place of Presentation
      PennStater Conference Center, University Park, PA, USA
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxy2012

    • Author(s)
      Shigeya Naritsuka
    • Organizer
      7th Interanational Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Nara Prefectureal New Public Hall
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] t触媒を用いた高真空アルコールガスソース法によるSWNT成長:成長温度依存性2012

    • Author(s)
      福岡直也, 水谷芳裕, 近藤弘基, 丸山隆浩, 成塚重弥, 飯島澄男
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] RF-MBEによるGaN選択成長のためのGa吸着原子再蒸発のメカニズム2012

    • Author(s)
      岩月剛徳, 加藤浩直, 白井優也, 廣田雄二郎, 丸山隆浩, 成塚重弥
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] SiC表面分解法によるカーボンナノチューブ成長における昇温速度の影響2012

    • Author(s)
      石黒祐樹, 榊原聡, 伊藤宏晃, 矢嶋孝敏, 成塚重弥, 丸山隆浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Temperature dependence of a-plane GaN low angle incidence microchannel epitaxy grown by ammonia-based metal-organic molecular beam epitaxy2012

    • Author(s)
      Shigeya Naritsuka, C.H. Lin, S. Uchiyama, and T. Maruyama
    • Organizer
      4th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      St. Peterburg, Russia
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Low angle incidence microchannel epitaxy of a-plane GaN grown by ammonia-based metal-organic molecular beam epitaxy (1)-[NH_3]/[TMG] ratio dependence2012

    • Author(s)
      林家弘, 内山翔太, 丸山隆浩, 成塚重弥
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] サファイア基板上でのNi触媒結晶化過程に与える熱処理の効果2012

    • Author(s)
      山内洋哉, 鬼頭佑典, 成塚重弥, 丸山隆浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] In situ NEXAFS Study on Carbon Nanotube Growth Process by Surface Decomposition of SiC2012

    • Author(s)
      Takahiro Maruyama, Yuki Ishiguro, Satoshi Sakakibara, Shigeya Naritsuka and Kenta Amemiya
    • Organizer
      第43回フ ラーレン・ナノチューブ・グラフェン総 合シンポジウム 1P-34、東北大学百周年 記念会館
    • Place of Presentation
      川内萩ホール(仙台)
    • Year and Date
      2012-09-05
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Band alignment of carbon nanotube/n-type 6H-SiC heterojunction determined by photoelectron spectroscopy2012

    • Author(s)
      T. Maruyama, S. Sakakibara, S. Naritsuka, H. Yamane and N. Kosugi
    • Organizer
      第31回電子材料シンポジ ウム(EMS-31)Th3-7
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2012-07-12
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] 低降温速度GaAsマイクロチャンネルエピタキシーにおける異常成長の検討2012

    • Author(s)
      菱田武重, 杉浦高志, 河村知洋, 神林大介, 成塚重弥, 丸山隆浩
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] アンモニアガスを用いた常圧液相成長によるGaN薄膜の成長2011

    • Author(s)
      風間正志, 岡崎佑馬、成塚重弥, 丸山隆浩
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Selective growth of GaN using SiO_2 or Ti masks by radio frequency molecular beam epitaxy2011

    • Author(s)
      T.Iwatsuki, Y.Nagae, Y.Osawa, Y.Shirai, T.Maruyama, S.Naritsuka
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] [NH_3]/[TMG] flow ratio dependence of micro-channel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy2011

    • Author(s)
      C.H.Lin, R.Abe, S.Uchiyama, Y.Uete, T.Maruyama, S.Naritsuka
    • Organizer
      5th Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
    • Place of Presentation
      Ise, Mie
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Low Temperature Synthesis of Single-Walled Carbon Nanotubes in a High Vacuum using Pt Catalyst in Alcohol Gas Source Method2011

    • Author(s)
      N.Fukuoka, Y.Mizutani, T.Maruyama, S.Naritsuka, S.
    • Organizer
      24th International Microprocesses and Nanotechnology Conference (MNC2011)
    • Place of Presentation
      全日空ホテル京都(京都)
    • Year and Date
      2011-10-27
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] RF-MBEによるGaN選択成長に与えるSiO_2マスクとTiマスクの効果2011

    • Author(s)
      岩月剛徳, 長江祐基, 大澤佑来, 白井優也, 成塚重弥, 丸山隆浩
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] 高温NEXAFS法によるカーボンナノキャップ生成過程の観察2011

    • Author(s)
      丸山隆浩、榊原悟史、成塚重弥、雨宮健太
    • Organizer
      第41回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      首都大学東京南大沢キャンパス
    • Year and Date
      2011-09-05
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] 高真空アルコールガスソース法によるPt触媒を用いた低圧力成長におけるSWNTの直径分布2011

    • Author(s)
      水谷芳裕、福岡直也、丸山隆浩、成塚重弥、飯島澄男
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-09-01
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] NH_3ベースMOMBEによるGaN選択成長の表面形状に与える[NH_3]/[TMG]の効果2011

    • Author(s)
      内山翔太, 林家弘, 丸山隆浩, 成塚重弥
    • Organizer
      第41回日本結晶成長国内会議
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] 高温NEXAFSその場測定によるカーボンナノチューブ成長初期過程の観察2011

    • Author(s)
      丸山隆浩、榊原悟史、成塚重弥、雨宮健太
    • Organizer
      第14回XAFS討論会
    • Place of Presentation
      岡崎コンファレンスセンター
    • Year and Date
      2011-09-11
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] (111)B GaAs低角入射マイクロチャネルエピタキシーに与えるAs圧の効果2011

    • Author(s)
      白井優也, 大澤佑来, 長江祐基, 岩月剛徳, 成塚重弥, 丸山隆浩
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Formation Process of Carbon Nanocap in Carbon Nanotube Growth by Surface Decomposition of SiC2011

    • Author(s)
      T. Maruyama, S. Sakakibara, H. Ito, S.Naritsuka and K. Amemiya
    • Organizer
      International Conference on New Diamond and Nano Carbons 2011 (NDNC 2011), Kunibiki Messe
    • Place of Presentation
      Matsue, Japan
    • Year and Date
      2011-05-17
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] アンモニア系有機金属分子線エピタキシーによるGaNのマイクロチャネルエピタキシー:[NH_3]/[TMG]流量比依存性2011

    • Author(s)
      林家弘, 阿部亮太, 植手芳樹, 内山翔太, 丸山隆浩, 成塚重弥
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Lateral growth of GaN with Low Angle Incidence Microchannnel Epitaxy by radio frequency plasma-assisted molecular beam epitaxy2011

    • Author(s)
      Shigeya Naritsuka, Yuki Nagae, Takenori Takatsuki, Yuya Shirai, Takahiro Maruyama
    • Organizer
      16th Semiconducting and Insulating Materials Conference (SIMC XVI)
    • Place of Presentation
      Stockholm, Sweden
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Photoemission study of Energy Band Alignment of CNT/SiC Heterostructure Formed by Surface Decomposition2011

    • Author(s)
      S.Sakakibara, H.Ito, S.Naritsuka, H.Yamane, E.
    • Organizer
      12th International Conference on the Science and Application of Nanotubes (NT11)
    • Place of Presentation
      Cambridge, UK
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] GaN薄膜のアンモニアガスを用いた大気圧下の液相成長2011

    • Author(s)
      風間正志, 小島春輝, 佐藤秀治郎, 山内洋哉, 成塚重弥, 丸山隆浩
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Formation Process of Carbon Nanocap in Carbon Nanotube Growth by Surface Decomposition of SiC2011

    • Author(s)
      T.Maruyama, S.Sakakibara, H.Tto, S.Naritsuka, K.Amemiva
    • Organizer
      International Conference on New Diamond and Nano Carbons 2011 (NDNC 2011)
    • Place of Presentation
      くにびきメッセ(松江)
    • Year and Date
      2011-05-17
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Effect of [NH_3]/[TMG] ratio on micro-channel epitaxy of GaN grown by ammonia-based metal-organic molecular beam epitaxy2011

    • Author(s)
      C.Lin, R.Abe, S.Uchiyama, T.Maruyama, S.Naritsuka
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] アンモニアベース有機金属分子線エピタキシーによるGaNの横方向成長2011

    • Author(s)
      内山翔太, 林家弘, 丸山隆浩, 成塚重弥
    • Organizer
      電子情報通信学会電子部品・材料研究会
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] In situ NEXAFS study of Initial Growth Process of Carbon Nanotube by Surface Decomposition of SiC2011

    • Author(s)
      Takahiro Maruyama, Satoshi Sakakibara, Hiroaki Itoh, Shigeya Naritsuka and Kenta Amemiya
    • Organizer
      12th International Conference on the Science and Application of Nanotubes (NT11), P133 2011 年 7 月 11 日 & Satellite Meeting Metrology, Standardization and Industrial Quality of Graphene and Nanotubes (MSIGN11)
    • Place of Presentation
      Cambridge, UK
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] (111) B GaAs基板上のGaAs低角入射マイクロチャンネルエピタキシーにおけるGa供給量の効果2011

    • Author(s)
      白井優也, 岩月剛徳, 廣田雄二郎, 加藤浩直, 成塚重弥, 丸山隆浩
    • Organizer
      第41回日本結晶成長国内会議
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] NH_3-based MOMBEによるGaN横方向成長層中の転位評価2011

    • Author(s)
      林家弘, 内山翔太, 丸山隆浩, 成塚重弥
    • Organizer
      第41回日本結晶成長国内会議
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] 高温NEXAFSその場測定によるカーボンナノチューブ成長初期過程の観察2011

    • Author(s)
      丸山隆浩、榊原悟史、成塚重弥、雨宮健太
    • Organizer
      第14回XAFS討論会3O02、岡崎コンファレンスセンター
    • Place of Presentation
      岡崎市
    • Year and Date
      2011-09-11
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] 真空アルコールガスソース法を用いたPt/SiO2/Si基板上でのSWNTの低圧力低温成2011

    • Author(s)
      福岡直也、水谷芳裕、丸山隆浩、成塚重弥、飯島澄男
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-09-01
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Low angle incidence microchannel epitaxy of GaN by ammonia-based metal-organic molecular beam epitaxy with [1-100]-direction microchannel2011

    • Author(s)
      Chia-Hung Lin, Ryota Abe, Shota Uchiyama, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      18th American Conference on Crystal Growth and Epitaxy & 15th DS Biennial Workshop on Organometallic Vapor Phase Epitaxy (ACCGE18 & 0MVPE15)
    • Place of Presentation
      Monterey, California, USA
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Single-Walled Carbon Nanotube Growth at Low Pressure from Pt catalyst using Alcohol Gas Source Method2011

    • Author(s)
      Yoshihiro Mizutani, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      12th International Conference on the Science and Application of Nanotubes (NT11)
    • Place of Presentation
      Cambridge, UK
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] SiC表面分解法によるカーボンナノチューブ生成における昇温速度の影響2011

    • Author(s)
      石黒祐樹、榊原悟史、伊藤宏晃、成塚重弥、丸山隆浩
    • Organizer
      第41回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      首都大学東京南大沢キャンパス
    • Year and Date
      2011-09-05
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] アンモニアガスを用いた大気圧下でのGaN薄膜の液相成長2011

    • Author(s)
      風間正志, 山内洋哉, 岡崎佑馬, 成塚重弥, 丸山隆浩
    • Organizer
      第41回日本結晶成長国内会議
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] 電流制御型LPEを用いたGaSb(001)の成長-電流値依存性-2010

    • Author(s)
      佐藤秀治郎, 小島春輝, 成塚重弥, 丸山隆浩
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] AlGaAs-based optical device fabricated on Si substrate using microchannel epitaxy2010

    • Author(s)
      D. Kanbayashi, Y. Ando, T. Kawakami, S. Naritsuka, T. Maruyama
    • Organizer
      The TMS Annual Meeting & Exhibition
    • Place of Presentation
      Washington State Convention Center, WA, USA
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy2010

    • Author(s)
      Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      Extended abstracts of 29^<th> Electronic Materials Symposium (EMS-29)
    • Place of Presentation
      Laforet Shuzenji, Izu
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] SiC表面分解によるカーボンナノチ ューブ生成初期過程のその場NEXAFS測 定の試み2010

    • Author(s)
      丸山隆浩,榊原悟史,成塚重弥,雨宮健太
    • Organizer
      第71回応用物理学会学術講演 会 17a-ZQ-3
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-17
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] XPS study of Nitridation of GaAs(001) Surface using RF-radical Source2010

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Yohei Monno, Takahiro Maruyama
    • Organizer
      The 37th International Symposium on Compound Semiconductors
    • Place of Presentation
      Takamatsu, Kagawa
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] MOMBEを用いたGaNの選択成長、横方向成長2010

    • Author(s)
      成塚重弥
    • Organizer
      分子線エピタキシー結晶成長研究会
    • Place of Presentation
      長岡技術科学大学(招待講演)
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] 表面分解法で4H-SiCと6H-SiCから成長したカーボンナノチューブのラマン分光法での比較2010

    • Author(s)
      石黒祐樹、榊原悟史、伊藤宏晃、丸山隆浩、成塚重弥
    • Organizer
      第40回フラーレン・ナノチューブ総合シンポジウム1P-5
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] SiC表 面分解法により形成したCNT/SiC接合界 面の電気的特性2010

    • Author(s)
      榊原悟史,丸山隆浩,成塚重弥
    • Organizer
      第71回応用物理学会学 術講演会 16p-ZQ-3
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Fabrication of AlGaAs-based Vertical Cavity Surface Emitting Laser on Si Substrate using Microchannel Epitaxy2010

    • Author(s)
      Y.Ando, D.Kanbayashi, T.Kawakami, H.Sato, T.Maruyama, S.Naritsuka
    • Organizer
      Extended abstracts of 29^<th> Electronic Materials Symposium (EMS-29)
    • Place of Presentation
      Laforet Shuzenji, Izu
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] アンモニアガスを用いた液相成長によるGaN薄膜の成長2010

    • Author(s)
      風間正志、小島春輝、佐藤秀治郎、成塚重弥、丸山隆弘
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] 温度差法LPEを用いたGaAs(001)マイクロチャンネルエピタキシーのための成長条件の検討2010

    • Author(s)
      小島春輝, 佐藤秀治郎, 風間正志, 成塚重弥, 丸山隆浩
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] アンモニア系MOMBEを用いたGaN選択成長の結晶表面形態に与える温度の効果2010

    • Author(s)
      阿部亮太, 林家弘, 丸山隆浩, 成塚重弥
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Effects of Water Addition on Single-Walled Carbon Nanotube Growth by Alcohol Gas Source Method in High Vacuum2010

    • Author(s)
      Takahiro Maruyama, Kuninori Sato, Shigeya Naritsuka
    • Organizer
      11th International Conference on the Science and Application of Nanotubes (NT10), 278
    • Place of Presentation
      Montreal, Canada
    • Year and Date
      2010-06-30
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Low angle incidence microchannel epitaxy of GaN using ammonia-based organic molecular beam epitaxy2010

    • Author(s)
      Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG-16)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy2010

    • Author(s)
      Chia-Hung Lin, Ryota Abe, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG-16)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] MOMBEによるGaNの選択成長、横方向成長2010

    • Author(s)
      阿部亮太、林家弘、丸山隆浩、成塚重弥
    • Organizer
      第2回窒化物半導体結晶成長講演会
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] Optimization of growth conditions for selective growth and lateral growth of GaN by RF-MBE2010

    • Author(s)
      Yuki Nagae, Takahiro Maruyama,Shigeya Naritsuka, Yuki Osawa
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG-16)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-22360131
  • [Presentation] SWNT Growth on Al_2O_x/Co/Al_2O_x Multilayer Catalyst using Alcohol Gas Source Method in High Vacuum2010

    • Author(s)
      佐藤一徳, 水谷芳裕, 丸山隆浩, 成塚重弥
    • Organizer
      第38回フラーレン・ナノチューブ総合シンポジウム
    • Place of Presentation
      名城大学(名古屋)
    • Year and Date
      2010-03-03
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] XPS Study of Nitridation Mechanism of GaAs (001) Surface using RF-radical Source (O-14)2009

    • Author(s)
      Shigeya Naritsuka, Yohei Monno, Midori Mori, Yoshitaka Takeuchi, Takahiro Maruyama
    • Organizer
      SemiconNano 2009
    • Place of Presentation
      Anan, Tokushima (invited)
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] 温度差法を用いたGaAs(001)マイクロチャンネルエピタキシーの成長条件の改善2009

    • Author(s)
      小島春輝, 佐藤秀治郎, 風間正志, 成塚重弥, 丸山隆浩
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Enhancement Mechanism of SWNT Yield with Al2Ox Buffer Layer in Low Temperature Growth,2009 MRS Fall Meeting K 5.272009

    • Author(s)
      Kuninori Sato, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      Hynes Convention Center and Sheraton Boston Hotel
    • Place of Presentation
      Boston, MA, USA
    • Year and Date
      2009-11-30
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] RFラジカル源を用いたGaAs(001)表面窒化によるGaN超薄膜の形成2009

    • Author(s)
      成塚重弥, 門野洋平, 森みどり, 竹内義孝, 丸山隆浩
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] 低温バッファー層の科学2009

    • Author(s)
      成塚重弥
    • Organizer
      日本学術振興会、結晶成長の科学と技術161委員会 第61回研究会
    • Place of Presentation
      京都市産業技術研究所 工業技術センター、京都 (招待論文)
    • Year and Date
      2009-12-04
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] GaSb電流制御型LPEの基礎的検討2009

    • Author(s)
      佐藤秀治郎, 小島春輝, 成塚重弥, 丸山隆浩
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] XPS Study of Nitridation Mechanism of GaAs(001)Surface using RF-radical Source2009

    • Author(s)
      成塚重弥, 門野洋平, 森みどり, 竹内義孝, 丸山隆浩
    • Organizer
      SemiconNano 2009(invited)
    • Place of Presentation
      Anan, Tokushima
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Purification of Carbon Nanotube Films Formed on SiC Substrates by Surface Decomposition2009

    • Author(s)
      Takahiro Maruyama, Fumiya Nakahama, Shigeya Naritsuka
    • Organizer
      2009 MRS Fall Meeting K 14.40, Hynes Convention Center and Sheraton Boston Hotel
    • Place of Presentation
      Boston, MA, USA
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] RFラジカル源を用いたGaAs(001)表面窒化によるGaN超薄膜の形成2009

    • Author(s)
      成塚重弥、門野洋平、森みどり、竹内義孝、丸山隆浩
    • Organizer
      第70回応用物理学会学術講演会 (8a-F-1)
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] アルコールガスソース法によるカーボンナノチューブ低温成長におけるA1_2O_x膜厚の影響2009

    • Author(s)
      佐藤一徳, 水谷芳裕, 丸山隆浩, 成塚重弥
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学(つくば市)
    • Year and Date
      2009-04-02
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] 低温バッファー層の科学2009

    • Author(s)
      成塚重弥
    • Organizer
      日本学術振興会、結晶成長の科学と技術161委員会 第61回研究会
    • Place of Presentation
      京都市産業技術研究所工業技術センター
    • Year and Date
      2009-12-04
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Ni-SiドーピングしたGaAsからの近赤外発光2009

    • Author(s)
      成塚重弥、行田哲也、山本芙美、手嶋康将、丸山隆浩
    • Organizer
      第56回応用物理学関係連合講演会 (31p-P11-4)
    • Place of Presentation
      筑波大学(つくば)
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Enhancement Mechanism of SWNT Yield with Al_2O_x Buffer Layer in Low Temperature Growth2009

    • Author(s)
      Kuninori Sato, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Hynes Convention Center(ボストン)
    • Year and Date
      2009-11-30
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] TMGとNR3を用いたMOMBEによるGaN薄膜の成長2009

    • Author(s)
      阿部亮太, 林家弘, 成塚重弥, 丸山隆浩
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] 高真空アルコールガスソース法による単層カーボンナノチューブ低温成長における酸化アルミニウムバッファ層の効果2009

    • Author(s)
      水谷芳裕, 佐藤一徳, 丸山隆浩, 成塚重弥
    • Organizer
      第36回フラーレン・ナノチューブ総合シンポジウム
    • Place of Presentation
      名城大学(名古屋)
    • Year and Date
      2009-03-05
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Influence of Water Addition on Carbon Nanotube Growth by Alcohol Gas Source Method in High Vacuum2009

    • Author(s)
      佐藤一徳, 丸山隆浩, 成塚重弥
    • Organizer
      第37回フラーレン・ナノチューブ総合シンポジウム
    • Place of Presentation
      つくば国際会議場(つくば)
    • Year and Date
      2009-09-03
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] SiC表面分解法により生成したカーボンナノチューブ膜の精製2009

    • Author(s)
      丸山隆浩,中浜郁也,成塚重弥
    • Organizer
      第70回応用物理学会学術講演会9p-ZR-11
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] RFラジカル源を用いたMBE-GaN選択成長に関する基礎的検討2009

    • Author(s)
      長江祐基, 丸山隆浩, 成塚重弥
    • Organizer
      日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
    • Place of Presentation
      東京農工大小金井キャンパス
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] SiC表面分解法により生成したカーボンナノチューブ膜の精製2009

    • Author(s)
      丸山隆浩, 中浜郁也, 成塚重弥
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山)
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Purification of Carbon Nanotube Films Formed on SiC Substrates by Surface Decomposition2009

    • Author(s)
      Takahiro Maruyama, Fumiya Nakahama, Shigeya Naritsuka
    • Organizer
      2009 MRS Fall Meeting
    • Place of Presentation
      Hynes Convention Center(ボストン)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Ni-SnドーピングしたGaAsからの近赤外発光2009

    • Author(s)
      成塚重弥, 行田哲也, 山本芙美, 手嶋康将, 丸山隆浩
    • Organizer
      第56回応用物理学会学術講演会
    • Place of Presentation
      日本大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] マイクロチャンネルエピタキシーを用いたSi基板上GaAs系共振器型発光ダイオードの作製2009

    • Author(s)
      神林大介, 川上拓也, 安藤悠平, 成塚重弥, 丸山隆浩
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] ウェットエッ手ングによる端面ミラーを持つAlGaAs系レーザの試作2009

    • Author(s)
      川上拓也, 神林大介, 安藤悠平, 成塚重弥, 丸山隆浩
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] RFラジカル源を用いたMBE-GaN選択成長における基板温度の効果2009

    • Author(s)
      長江祐基, 神林大介, 川上拓也, 大沢佑来, 丸山隆浩, 成塚重弥
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Fabrication of GaAs-based resonant cavity light emitting diode on Sisubstrate using microchannel epitaxy2009

    • Author(s)
      安藤悠平, 神林大介, 川上拓也, 丸山隆浩, 成塚重弥
    • Organizer
      Extended Abstracts of the 28th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Shiga
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] (111)B GaAs低角入射マイクロチャンネルエピタキシーのための基礎的検討2009

    • Author(s)
      大澤佑来, 神林大介, 安藤悠平, 成塚重弥, 丸山隆浩
    • Organizer
      第39回結晶成長国内会議(NCCG-39)
    • Place of Presentation
      名古屋大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] RF-MBEによるGaAs表面窒化超薄膜のフォトルミネッセンス評価2008

    • Author(s)
      神林大介, 森みどり, 竹内義孝, 成塚重弥, 丸山隆浩
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Influence of Al oxide buffer layer for improving SWNT yield by alcohol gas source technique2008

    • Author(s)
      Takahiro Maruyama, Tomoyuki Shiraiwa, and Shigeya Naritsuka
    • Organizer
      2008 MRS Fall Meeting JJ 5.6
    • Place of Presentation
      Hynes Convention Center and Sheraton Boston Hotel, Boston, MA, USA
    • Year and Date
      2008-12-01
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Low Temperature Synthesis of Single-Walled Carbon Nanotube by Alcohol Gas Source Growth in High Vacuum2008

    • Author(s)
      T, Maruyama, K. Sato, Y. Mizutani, S. Naritsuka
    • Organizer
      The IUMRS international Conference in Asia 2008(IUMRS-ICA 2008)
    • Place of Presentation
      名古屋国際会議場(名古屋)
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Carbon Nanotube Growth by SiC Surface Decomposition in Hydrogen Ambient2008

    • Author(s)
      K. Ueda, Y. Iijima, T. Maruyama, S. Naritsuka
    • Organizer
      The IUMRS international Conference in Asia 2008(IUMRS-ICA 2008)
    • Place of Presentation
      名古屋国際会議場(名古屋)
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Effect of crystal orientation of microchannel on low-angle incidence microchannel epitaxy on (001) GaAs substrate2008

    • Author(s)
      Shigeya Naritsuka, Shuji Matsuoka, Yuji Ishida, Takahiro Maruyama
    • Organizer
      Abstract of International Conference on Molecular Beam Epitaxy (MBE2008)
    • Place of Presentation
      Vancouver, Canada
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Effect of crystal orientation of microchannel on low-angle incidence microchannel epitaxy on (001)GaAS substrate2008

    • Author(s)
      Shigeya Naritsuka, Shuji Matsuoka, Yuji Ishida, Takahiro Maruyama
    • Organizer
      International Conference on Molecular Beam Epitaxy (MBE2008)
    • Place of Presentation
      Vancouver, Canada
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Optimization of growth condition of GaAs (001) microchannel epitaxy2008

    • Author(s)
      Y. Tejima, K. Suzuki, T. Maruyama, S. Naritsuka
    • Organizer
      27^<th> Electronic Materials Symposium(EMS-27)
    • Place of Presentation
      Laforet Shuzenji, Japan
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] 酸化Alバッファ層を用いたアルコールガスソース法によるカーボンナノチューブ低温成長2008

    • Author(s)
      佐藤一徳, 丸山隆浩, 成塚重弥
    • Organizer
      第69回応用物理学学術講演会
    • Place of Presentation
      中部大学(春日井市)
    • Year and Date
      2008-09-04
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Role of Al oxide buffer layer in carbon nanotube growth by alcohol gas source method2008

    • Author(s)
      K. Sato, K. Tanioku, T. Shiraiwa, T. Maruyama, S. Naritsuka
    • Organizer
      The 27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      ラフォーレ修善寺(伊豆長岡、静岡)
    • Year and Date
      2008-07-09
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Dependence of SWNT growth yield on Al oxide buffer layer thickness by alcohol gas source method in high vacuum2008

    • Author(s)
      T. Maruyama, T. Shiraiwa, S. Naritsuka
    • Organizer
      19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (Diamond 2008)
    • Place of Presentation
      Sitges, Spain
    • Year and Date
      2008-09-08
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] RF-ラジカルを用いたGaAs(001)表面の窒化における格子緩和メカニズム2008

    • Author(s)
      成塚重弥、森みどり、竹内義孝、神林大介、門野洋平、丸山隆浩
    • Organizer
      第38回結晶成長国内会議 (06aA08)
    • Place of Presentation
      仙台市戦災復興記念館
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Temperature dependence of nitridation of (001)GaAS surface and its effect to morphology of overgrown GaAs layer2008

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Takahiro Maruyama
    • Organizer
      27^<th> Electronic Materials Symposium(EMS-27)
    • Place of Presentation
      Laforet Shuzenji, Japan
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] ガスソース法によるカーボンナノチューブ成長への酸化Alバッファ層挿入効果2008

    • Author(s)
      丸山隆浩, 白岩倫行, 成塚重弥
    • Organizer
      第55回応用物理学関係連合講演会29p-J-20
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] High yield synthesis and growth mechanism of carbon nanotube using alcohol gas source method in high vacuum2008

    • Author(s)
      Takahiro Maruyama, Kuninori Sato, Kenji Tanioku, Tomoyuki Shiraiwa, Shigeya Naritsuka
    • Organizer
      Ninth International Conference on the Science and Application of Nanotubes (NT08)
    • Place of Presentation
      Le Corum, Montpellier, France
    • Year and Date
      2008-06-30
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source2008

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Takahiro Maruyama
    • Organizer
      Second International Symposium on Growth of III-nitride(ICGN-2)
    • Place of Presentation
      Laforet Shuzenji, Japan
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] RF-ラジカルを用いたGaAs(001)表面の窒化における格子緩和メカニズム2008

    • Author(s)
      成塚重弥, 森みどり, 竹内義孝, 神林大介, 門野洋平, 丸山隆浩
    • Organizer
      第38回結晶成長国内会議
    • Place of Presentation
      仙台市戦災復興記念館
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Fabrication of InN dot structures by droplet epitaxy using NH_32008

    • Author(s)
      Shigeya Naritsuka, Hiroaki Otsubo, Shoji Osaki, Takahiro Maruyama
    • Organizer
      XXI Congress and General Assembly of the International Union of Crystallography(IUCr)
    • Place of Presentation
      Grand Cube Osaka, Japan
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Fabrication of InN dot structures by droplet epitaxy using NH_32008

    • Author(s)
      Shigeya Naritsuka, Hiroaki Otsubo, Shoji Osaki, Takahiro Maruyama
    • Organizer
      XXI Congress and General Assembly of the International Union of Crystallography (IUCr)
    • Place of Presentation
      Grand Cube Osaka
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Effect of Buffer Thickness on Single-Walled Carbon Nanotube Growth using Aluminum Oxide Buffer Layer with Alcohol Gas Source Method2008

    • Author(s)
      K. Sato, T. Shiraiwa, T. Maruyama, S. Naritsuka
    • Organizer
      The IUMRS international Conference in Asia 2008(IUMRS-ICA 2008)
    • Place of Presentation
      名古屋国際会議場(名古屋)
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source2008

    • Author(s)
      Shigeya Naritsuka, Midori Mori, Yoshitaka Takeuchi, Takahiro Maruyama
    • Organizer
      Second International Symposium on Growth of III-nitride(ICGN-2)
    • Place of Presentation
      Laforet Shuzenji
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Effect of crystal orientation of microchannel on low-angle incidence microchannel epitaxy on(001)GaAs substrate2008

    • Author(s)
      Shigeya Naritsuka, Shuji Matsuoka, Yuji Ishida and Takahiro Maruyama
    • Organizer
      International Conference on Molecular Beam Epitaxy(MBE2008)
    • Place of Presentation
      Vancouver,Canada
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] (001)GaAa低角入射マイクロチャンネルエピタキシーに与えるマイクロチャンネル方位の影響2008

    • Author(s)
      川上拓也, 松岡秀司, 石田裕詞, 成塚重弥, 丸山隆浩
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Influence of Al oxide buffer layer for improving SWNT yield by alcoholgas source technique2008

    • Author(s)
      T. Maruyama, T. Shiraiwa, S. Naritsuka
    • Organizer
      2008 MRS Fall Meeting
    • Place of Presentation
      ボストン(アメリカ)
    • Year and Date
      2008-12-01
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] 温度差法を用いたGaAs (001)マイクロチャンネルエピタキシーによる横方向成長2008

    • Author(s)
      手嶋康将, 鈴木堅志郎, 成塚重弥, 丸山隆浩
    • Organizer
      電子情報通信学会技術研究報告
    • Place of Presentation
      名古屋工業大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Low Temperature Synthesis of Single-Walled Carbon Nanotube by Alcohol Gas Source Growth in High Vacuum2008

    • Author(s)
      T. Maruyama, K. Sato, Y. Mizutani and S. Naritsuka
    • Organizer
      The IUMRS international Conference in Asia 2008 (IUMRS-ICA 2008) O7
    • Place of Presentation
      Nagoya Congress Center, Japan
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] 温度差法によるGaAs(001)マイクロチャンネルエピタキシーの成長条件の最適化2008

    • Author(s)
      手嶋康将, 鈴木堅志郎, 丸山隆浩, 成塚重弥
    • Organizer
      第38回結晶成長国内会議
    • Place of Presentation
      仙台市戦災復興記念館
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] High yield synthesis and growth mechanism of carbon nanotube using alcohol gas source method in high vacuum2008

    • Author(s)
      T. Maruyama, K. Sato, K. Tanioku, T. Shiraiwa, S. Naritsuka
    • Organizer
      Ninth International Conference on the Science and Application of Nanotubes (NT08)
    • Place of Presentation
      モンペリエ(フランス)
    • Year and Date
      2008-06-30
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] SiC表面分解カーボンナノチューブ生成における水素ガスの効果2008

    • Author(s)
      上田和史, 飯島祐樹, 丸山隆浩, 成塚重弥
    • Organizer
      第69回応用物理学学術講演会
    • Place of Presentation
      中部大学(春日井市)
    • Year and Date
      2008-09-05
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Enhancement of Carbon Nanotube Growth at Low Temperature using A1_2O_x Buffer Layer in Alcohol Gas Source Method2008

    • Author(s)
      丸山隆浩, 佐藤一徳, 白岩倫行, 成塚重
    • Organizer
      第35回フラーレン・ナノチューブ総合シンポジウム
    • Place of Presentation
      東京工業大学(東京都目黒区)
    • Year and Date
      2008-08-28
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] AlGaAs MCEにおける過飽和度制御2007

    • Author(s)
      服部篤、丸山隆浩、成塚重弥
    • Organizer
      第37回結晶成長国内会議
    • Place of Presentation
      北海道大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Low angle incidence microchannel Epitaxy of GaAs layer on GaAs (001) substrates2007

    • Author(s)
      S. Matsuoka, Y. Yamamoto, T. Kondo, T. Maruyama, S. Naritsuka
    • Organizer
      TMS Annual Meeting & Exhibition
    • Place of Presentation
      Orlando, Florida, USA
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] GaAsMCEの浮き上がり現象に与えるマスク表面張力の影響2007

    • Author(s)
      山本朗夫、今井巧、伊藤浩士、神林大介、成塚重弥、丸山隆弘
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Low angle incidence microchannel Epitaxy of GaAs layer on GaAs(001)substrates2007

    • Author(s)
      S. Matsuoka, Y. Yamamoto, T. Kondo, T. Maruyama and S. Naritsuka
    • Organizer
      TMS Annual Meeting & Exhibition
    • Place of Presentation
      Orlando, Florida, USA
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] マイクロチャンネルエピタキシーの結合によるAlGaAsの全面平坦成長2007

    • Author(s)
      服部篤、柘植慧、成塚重弥、丸山隆浩
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Liquid phase epitaxy of GaAs by temperature difference method to realize wide lateral growth2007

    • Author(s)
      S. Naritsuka, Y. Tejima, K. Fujie and T. Maruyama
    • Organizer
      The 15th International Conference on Crystal Growth
    • Place of Presentation
      Salt Lake City, USA
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] SiC表面分解カーボンナノチューブ生成法におけるナノチューブ/SiC界面制御2007

    • Author(s)
      丸山隆浩、楠美智子、成塚重弥
    • Organizer
      第37回結晶成長国内会議05aB04
    • Place of Presentation
      北海道大学、札幌市北区、(招待講演)
    • Year and Date
      2007-11-15
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] 超高真空STMによるSiO_2/Si(111)ナノリソグラフィー(2)2007

    • Author(s)
      山本陽、北野宏樹、森みどり、谷奥健次、丸山隆浩、成塚重弥
    • Organizer
      第54回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Growth Optimization of Low Angle Incidence Microchannel Epitaxy of GaAs layer on(001)GaAs substrates2007

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Yamashita, Y. Yamamoto and T. Maruyama
    • Organizer
      The 15th International Conference on Crystal Growth
    • Place of Presentation
      Salt Lake City, USA
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Surface Oxidation and Carbon Nanotube Formation in Surface Decomposition of 6H-SiC2007

    • Author(s)
      T. Maruyama, N. Fujita, S. Naritsuka, M. Kusunoki
    • Organizer
      2007MRS Fall Meeting II 5.26, Hynes Convention Center and Sheraton Boston Hotel
    • Place of Presentation
      Boston, MA, USA
    • Year and Date
      2007-11-26
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Carbon nanotube growth on SiO_2/Si at low tempreture using alcohol gas source in high vacuum2007

    • Author(s)
      T. Maruyama, K. Tanioku and S. Naritsuka
    • Organizer
      Extended Abstracts of the 26th Electronic Materials Symposium (EMS-26), I2
    • Place of Presentation
      Laforet Biwako, Moriyama, Shiga
    • Year and Date
      2007-07-05
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] アンモニアを用いたドロップレットエピタキシー法によるInNドット作製の検討2007

    • Author(s)
      大坪弘明、大崎洋司、丸山隆浩、成塚重弥
    • Organizer
      第37回結晶成長国内会議
    • Place of Presentation
      北海道大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Rf-ラジカル源を用いた(001)GaAs表面の窒化過程の研究2007

    • Author(s)
      森みどり、竹内義孝、山本陽、丸山隆浩、成塚重弥
    • Organizer
      第37回結晶成長国内会議
    • Place of Presentation
      北海道大学
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Growth Optimization of Low Angle Incidence Microchannel Epitaxy of GaAs layer on (001)GaAs substrates2007

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Yamashita, Y. Yamamoto, T. Maruyama
    • Organizer
      The 15th International Conference on Crystal Growth 948
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Liquid phase epitaxy of GaAs by temperature difference method to realize wide lateral growth2007

    • Author(s)
      S. Naritsuka, Y. Tejima, K. Fujie, T. Maruyama
    • Organizer
      The 15th International Conference on Crystal Growth 823
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Low Temperature Synthesis of Carbon Nanotube on Si substrate Using Alcohol Gas Source in High Vacuum2007

    • Author(s)
      T. Maruyama, K. Tanioku, S. Naritsuka
    • Organizer
      2007MRS Fall Meeting II 14.3, Hynes Convention Center and Sheraton Boston Hotel
    • Place of Presentation
      Boston, MA, USA
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Carbon nanotube growth on SiO_2/Si at low tempreture using alcoholgas source in high vacuum2007

    • Author(s)
      T. Maruyama, K. Tanioku and S. Naritsuka
    • Organizer
      Extended Abstracts of the 26th Electronic Materials Symposium(EMS-26)
    • Place of Presentation
      Laforet Biwako, Shiga
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Growth Optimization of Low Angle Incidence Microchannel Epitaxy of GaAs layer on(001)GaAs substrates2007

    • Author(s)
      S. Naritsuka, S. Matsuoka, Y. Yamashita, Y. Yamamoto and T. Maruyama
    • Organizer
      The 15th International Conference on Crystal Growth
    • Place of Presentation
      Salt Lake City,Utah,USA
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] STM and XPS studies of early stage of carbon nanotube growth on 6H-SiC(000-1) under various oxygen pressures2006

    • Author(s)
      T. Maruyama, N. Fujita, Y. Kawamura, H. Bang, S. Naritsuka and M. Kusunoki
    • Organizer
      The 17th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides, DIAM2006
    • Place of Presentation
      Estoril, Portugal
    • Year and Date
      2006-09-04
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Carbon Nanocpap and Carbon Nanotube Growth on SiC by Surface Decomposition2006

    • Author(s)
      T. Maruyama, S. Naritsuka, M. Kusunoki
    • Organizer
      14^<th> Int. Conf. Composites/Nano Engineering (ICCE-14), Renaissance Suites
    • Place of Presentation
      Broomfield, Boulder, Colorado, USA
    • Year and Date
      2006-07-03
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] GaNドット構造の液滴エピタキシーにおけるアンモニア雰囲気中の熱処理効果2006

    • Author(s)
      成塚重弥、大坪弘明、近藤俊行、山本陽、丸山隆浩
    • Organizer
      第36回結晶成長国内会議 (01pB02)
    • Place of Presentation
      大阪大学
    • Year and Date
      2006-11-01
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Formation mechanism of rotation twin in beam induced lateral epitaxy on (111)B GaAs substrate2006

    • Author(s)
      S. Naritsuka, S. Matsuoka, T. Kondo, Y. Yamamoto, K. Saitoh, T. Maruyama
    • Organizer
      The 14^<th> International Conference on MBE
    • Place of Presentation
      Tokyo
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] In-situ annealing of GaN dot structures grown by droplet epitaxy on (111) Si substrates2006

    • Author(s)
      S. Naritsuka, T. Kondo, H. Otsubo, K. Saitoh, Y. Yamamoto, T. Maruyama
    • Organizer
      First International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Linkoping, Sweden
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] GaAs/ c-GaN/ GaAs Multi-Layered Structure Fabricated by Using RF-Plasma Source Nitridation Technique2006

    • Author(s)
      Y. Yamamoto, M. Mori, H. Otsubo, T. Maruyama, S. Naritsuka
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] Formation process of carbon nanocap from SiC(000-1) surface through thermal decomposition2006

    • Author(s)
      T. Maruyama, Y. Kawamura, H. Bang, N. Fujita, T. Shiraiwa, K. Tanioku, Y. Hozumi, S. Naritsuka and M. Kusunoki
    • Organizer
      第30回フラーレン・ナノチューブ総合シンポジウム2P-29
    • Place of Presentation
      名城大学(名古屋)
    • Year and Date
      2006-01-08
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] Effect of substrate surface on GaN dot structure grown on Si(111) by droplet epitaxy2006

    • Author(s)
      H. Otsubo, T. Kondo, Y. Yamamoto T. Maruyama, S. Naritsuka
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] GaAs表面窒化によるGaN超薄膜の作製とGaAs/c-GaN/GaAs多層構造の作製2006

    • Author(s)
      成塚重弥
    • Organizer
      東北大学電気通信研究所共同プロジェクト研究会
    • Place of Presentation
      ホールサムインばんじ
    • Year and Date
      2006-11-17
    • Data Source
      KAKENHI-PROJECT-18360155
  • [Presentation] SiC表面におけるナノキャップ形成過程2005

    • Author(s)
      丸山隆浩、方炯軫、河村康之、吉田千紗、細田悦子、成塚重弥、楠美智子
    • Organizer
      文部科学省ナノテクノロジー総合支援プロジェクト「分子・物質総合合成・解析支援グループ」成果発表会、「分子・物質に視点をおいたナノテクノロジー・ナノサイエンスIII」
    • Place of Presentation
      岡崎コンファレンスセンター
    • Year and Date
      2005-03-23
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] STM observation of formation process of carbon nanotube from 6H-SiC (000-1)2005

    • Author(s)
      T. Maruyama, Y. Kawamura, H. Bang, N. Fujita, T. Shiraiwa, K. Tanioku, Y. Hozumi, S. Naritsuka and M. Kusunoki
    • Organizer
      Abstract of 2005 MRS fall meeting, Hynes Convention Center and Sheraton Boston Hotel
    • Place of Presentation
      Boston, MA, Rall
    • Year and Date
      2005-11-28
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] STM and XPS study of CNT nano-cap formation from 6H-SiC(000-1)2005

    • Author(s)
      T. Maruyama, Y. Kawamura, H. Bang, N. Fujita, T. Shiraiwa, K. Tanioku, Y. Hozumi, S. Naritsuka and M. Kusunoki
    • Organizer
      第29回フラーレン・ナノチューブ総合シンポジウム 2P-21
    • Place of Presentation
      京都大学
    • Year and Date
      2005-07-25
    • Data Source
      KAKENHI-PROJECT-17560015
  • [Presentation] SWNT Growth from Pt Catalyst at Very Low Pressures by the Alcohol Gas Source Method

    • Author(s)
      Takahiro Maruyama, Naoya Fukuoka, Hiroki Kondo Ranajit Ghosh, Shigeya Naritsuka (T. Maruyama)
    • Organizer
      2012 MRS Fall Meeting
    • Place of Presentation
      ボストン(アメリカ)
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Single-walled carbon nanotube growth from Pt catalysts by cold-wall ACCVD

    • Author(s)
      T. Maruyama, H. Kondo, Y. Sawaki, R. Ghosh, S. Naritsuka, T. Okazaki, S. Iijima
    • Organizer
      The 15th International Conference on the Science and Application of Natnotubes (NT14)
    • Place of Presentation
      University of Southern California, Los Angeles, USA
    • Year and Date
      2014-06-02 – 2014-06-06
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] 拡散バリアと2 段階熱処理を用いた析出法による高品質多層グラフェンの成長

    • Author(s)
      上田悠貴, 鈴木学, 山田純平, 丸山隆浩, 成塚重弥
    • Organizer
      第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      名古屋大学(愛知県名古屋市)
    • Year and Date
      2014-09-03 – 2014-09-05
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Lateral Growth of GaN by Liquid Phase Electroepitaxy using aluminum oxide mask

    • Author(s)
      Muneki Iwakawa, Hiroyuki Takakura, Masafumi Tomita, Daisuke Kambayashi, Yosuke Mizuno, Shigeya Naritsuka, and Takahiro Maruyama
    • Organizer
      33th Electronic Materials Symposium (EMS-33)
    • Place of Presentation
      Laroret Shuzenji, Izu
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Syntesis of Single-Waled Carbon Nanotubes from Pd Catalysts by Gas Source Method Using Ethanol in High Vacuum

    • Author(s)
      Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      ISPlasma2015/IC-PLANTS2015
    • Place of Presentation
      Nagoya University, Nagoya
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] Low Temperature Growth of SWNTs on Pt catalyst by Alcohol Gas Source Method in High Vacuum

    • Author(s)
      Hiroki Kondo, Naoya Fukuoka, Ghosh Ranajit, Shigeya Naritsuka, Takahiro Maruyama, Sumio Iijim (T. Maruyama)
    • Organizer
      第43回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      仙台市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Pt触媒を用いた高真空アルコールガスソース法によるSWNT低温成長

    • Author(s)
      近藤弘基,福岡直也,水谷芳裕,Ghosh Ranajit,成塚重弥,丸山隆浩,飯島澄男 (丸山隆浩)
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      松山市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] GaAs MCEにおけるらせんステップ源による法線成長速度決定メカニズム

    • Author(s)
      水野 陽介、冨田 将史、高倉 宏幸、岩川 宗樹、神林 大介、丸山 隆浩、成塚 重弥
    • Organizer
      第62回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Effect of Growth Temperature on Growth Rate in Carbon Nanotube Formation by Surface Decomposition of SiC

    • Author(s)
      Takatoshi Yajima, Satoshi Sakakibara, Shigeya Naritsuka, Takahiro Maruyama (T. Maruyama)
    • Organizer
      第43回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      仙台市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] 3Dプリンターを用いた流速支援GaN液相成長用ボートの検討

    • Author(s)
      岩川宗樹,高倉宏幸,冨田将史,神林大介,水野陽介,山田純平,安井亮太,丸山隆浩,成塚重弥
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学, 名古屋
    • Year and Date
      2014-07-25 – 2014-07-26
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Synthesis of Multi-Layer Graphene by Precipitation Method Using Hybrid Diffusion Barrier Layer

    • Author(s)
      Manabu Suzuki, Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      2014 MRS Fall Meeting & Exhibit
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-12-01 – 2014-12-05
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Precipitation of High-Quality Multilayer-Graphene Using Al_2O_3 Barrier and Au Cap Layers

    • Author(s)
      Jumpei Yamada, Manabu Suzuki, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      Matereials Research Symposium (MRS) spring Meeting & Exhibit
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2014-04-05 – 2014-04-10
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] NEXAFS study on carbon nanotube growth by surface decomposition of SiC

    • Author(s)
      T. Maruyama, S. Sakakibara, Y. Ishiguro, S. Naritsuka, K. Amemiya, H. Ishii, T. Ohta (T. Maruyama)
    • Organizer
      The Annual World Conference on Carbon (Carbon 2012)
    • Place of Presentation
      クラクフ(ポーランド)
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] メサ加工テンプレート基板を用いた電流制御型液相成長によるGaN横方向成長

    • Author(s)
      高倉宏幸, 冨田将史, 神林大介, 岩川宗樹, 水野陽介, 山田純平, 安井亮太, 丸山隆浩, 成塚重弥
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Effect of N2 micro plasma treatment on initial growth of GaN by MOMBE

    • Author(s)
      Yohei Suzuki, Toshihiro Inagaki, Shota Uchiyama, Takahiro Maruyama, Shigeya Naritsuka, Yuuta Noma, Shogo Kaneda, and Kazuo Shimizu
    • Organizer
      International Workshop on Nitrides Semiconductors 2014 (IWN2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] メサ加工基板を用いた電流制御型液相成長によるGaNの横方向成長領域の評価

    • Author(s)
      高倉宏幸,岩川宗樹,神林大介,冨田将史,水野陽介,山田純平,安井亮太,丸山隆浩,成塚重弥
    • Organizer
      第44回結晶成長国内会議
    • Place of Presentation
      学習院大学、東
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Synthesis of Multi-Layer Graphene by Precipitation Method Using Hybrid Diffusion Barrier Layer

    • Author(s)
      Manabu Suzuki, Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      2014 Matereials Research Symposium (MRS) Fall Meeting & Exhibit
    • Place of Presentation
      Boston, USA
    • Year and Date
      2014-11-30 – 2014-12-05
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] MOMBEを用いたGaN初期成長に与えるその場N2マイクロプラズマ処理の効果

    • Author(s)
      鈴木 陽平,日下部 安宏,丸山 隆浩,成塚 重弥,清水 一男,野間 悠太,金田 省吾
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] In situ NEXAFS Study on Carbon Nanotube Growth Process by Surface Decomposition of SiC

    • Author(s)
      Takahiro Maruyama, Yuki Ishiguro, Satoshi Sakakibara, Shigeya Naritsuka, Kenta Amemiya (T. Maruyama)
    • Organizer
      第43回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      仙台市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] N2マイクロプラズマを用いたGaN低角入射マイクロチャンネルエピタキシーにおける再成長の改善

    • Author(s)
      鈴木陽平,日下部安宏,丸山隆浩,成塚重弥
    • Organizer
      第44回結晶成長国内会議
    • Place of Presentation
      学習院大学(東京都豊島区)
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] High-Quality Multi-Layer Graphene by Precipitation Method with Two Step Annealing

    • Author(s)
      Yuki Ueda, Manabu Suzuki, Jumpei Yamada, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      7th International Symposium on Advaced Plasema Science and its Applications for Nitrides and Nanometerials / 8th Intranational Conference on Plasma-Nano Technology & Science
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Carbon Nanotube Growth on ZnO(0001) Zn-face using Gas Source Method in High Vacuum

    • Author(s)
      Takeshi Kawai, Shigeya Naritsuka, Takahiro Maruyama (T. Maruyama)
    • Organizer
      第43回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      仙台市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Au,Al2O3バリア層を用いたグラフェン析出法における核形成制御

    • Author(s)
      山田純平, 鈴木学, 上田悠貴, 成塚重弥, 丸山隆弘
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] GaAs MCEにおける表面過飽和度と法線成長速度の関係

    • Author(s)
      冨田将史,高倉宏幸,岩川宗樹,水野陽介,山田純平, 神林大介, 丸山隆浩, 成塚重弥
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Au キャップ層、Al2O3 バリア層を用いたグラフェン析出法における核形成制御

    • Author(s)
      山田純平, 鈴木学, 上田悠貴, 成塚重弥, 丸山隆弘
    • Organizer
      第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      名古屋大学(愛知県名古屋市)
    • Year and Date
      2014-09-03 – 2014-09-05
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] 表面ステップの移動を制御するマスクパターンを用いたGaAs MCE横縦比の向上

    • Author(s)
      水野陽介,冨田将史,神林大介,高倉宏幸,岩川宗樹,安井亮太,丸山隆浩,成塚重弥
    • Organizer
      第44回結晶成長国内会議
    • Place of Presentation
      学習院大学(東京都豊島区)
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] 膜厚制御メサ加工基板を用いた電流制御型液相成長によるGaN横方向成長

    • Author(s)
      岩川 宗樹、高倉 宏幸、冨田 将史、神林 大介、安井 亮太、水野 陽介、丸山 隆浩、成塚 重弥
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Growth of multilayer graphene by hybrid method of alcohol CVD and precipitation

    • Author(s)
      Shigeya Naritsuka, Yusuke Kito, Manabu Suzuki, Naokuni Hayakawa, Junpei Yamada, and Takahiro Maruyama
    • Organizer
      25th International Conference on Diamond and Carbon Materials
    • Place of Presentation
      Madrid, Spain
    • Year and Date
      2014-09-07 – 2014-09-11
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Al2O3バリア層、Auキャップ層を用いた高品質多層グラフェンの析出法におけるアニール温度依存性

    • Author(s)
      山田純平 , 鈴木学, 上田悠貴 , 丸山隆弘, 成塚重弥
    • Organizer
      第48回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京大学(東京都文京区)
    • Year and Date
      2015-02-21 – 2015-02-23
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Synthesis of Multi-layer Graphene for Wiring Application by Precipitation Method using Hybrid Diffusion Barrier Layer

    • Author(s)
      Manabu Suzuki, Jumpei Yamada, Yuki Ueda, Takahiro Maruyama, and Shigeya Naritsuka
    • Organizer
      第47回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      名古屋大学(愛知県名古屋市)
    • Year and Date
      2014-09-03 – 2014-09-05
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Al2O3バリア層を用いた析出法による多層グラフェンの作製

    • Author(s)
      鈴木学,山田純平, 上田悠貴, 成塚重弥, 丸山隆浩
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] メサ加工基板を用いた電流制御型液相成長によるGaNの横方向成長領域の評価

    • Author(s)
      高倉宏幸,岩川宗樹,神林大介,冨田将史,水野陽介,山田純平,安井亮太,丸山隆浩,成塚重弥
    • Organizer
      第44回結晶成長国内会議
    • Place of Presentation
      学習院大学(東京都豊島区)
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Selective growth of GaN by Liquid Phase Electroepitaxy using Al_2O_3 mask

    • Author(s)
      H. Takakura, M. Tomita, D. Kambayashi, M. Iwakawa, Y. Misuno, J. Yamada, S. Naritsuka, and T. Maruyama
    • Organizer
      6th Int. Symp. Advanced Plasma Sci. and its Appl for Nitrides and Nanomaterials, 7th Int. Con. on Plasma-Nano Tech. & Sci.
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2014-03-02 – 2014-03-06
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] アルコールガスソース法によるPt触媒からの単層カーボンナノチューブ成長:Co触媒との比較

    • Author(s)
      小澤顕成,才田隆広,成塚重弥,丸山隆浩
    • Organizer
      第24回日本MRS年次大会
    • Place of Presentation
      横浜市開港記念会館&横浜情報文化センター
    • Year and Date
      2014-12-10 – 2014-12-12
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] High-Quality Multi-Layer Graphene by Precipitation Method with Two Step Annealing

    • Author(s)
      Yuki Ueda, Manabu Suzuki, Jumpei Yamada, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      7th International Symposium on Advaced Plasema Science and its Applications for Nitrides and Nanometerials (ISPlasma2015)/ 8th Intranational Conference on Plasma-Nano Technology & Science (IC-PLANTS2015)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2015-03-26 – 2015-03-31
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] GaAs MCEにおける表面過飽和度と法線成長速度の関係

    • Author(s)
      冨田将史,高倉宏幸,岩川宗樹,水野陽介,山田純平, 神林大介, 丸山隆浩, 成塚重弥
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、北海道
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Band alignment of carbon nanotube/n-type 6H-SiC heterojunction determined by photoelectron spectroscopy

    • Author(s)
      T. Maruyama, S. Sakakibara, S. Naritsuka, H. Yamane, N. Kosugi (T. Maruyama)
    • Organizer
      第31回電子材料シンポジウム(EMS-31)
    • Place of Presentation
      伊豆市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] 2段階アニール析出法による高品質多層グラフェンの合成

    • Author(s)
      上田 悠貴、鈴木 学、山田 純平、成塚 重弥、丸山 隆浩
    • Organizer
      第62回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Synthesis of Single-Walled Carbon Nanotubes from Rh Catalysts by Alcohol Gas Source Method in High Vacuum

    • Author(s)
      Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Takahiro Maruyama
    • Organizer
      The 48th Fullerenes-Nanotubes-Graphene General Symposium (FNTG)
    • Place of Presentation
      The University of Tokyo
    • Year and Date
      2015-02-21 – 2015-02-23
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] 表面ステップの移動を制御するマスクパターンを用いたGaAs MCE横縦比の向上

    • Author(s)
      水野陽介,冨田将史,神林大介,高倉宏幸,岩川宗樹,安井亮太,丸山隆浩,成塚重弥
    • Organizer
      第44回結晶成長国内会議
    • Place of Presentation
      学習院大学、東京
    • Year and Date
      2014-11-06 – 2014-11-08
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] 膜厚制御メサ加工基板を用いた電流制御型液相成長によるGaN横方向成長

    • Author(s)
      岩川 宗樹、高倉 宏幸、冨田 将史、神林 大介、安井 亮太、水野 陽介、丸山 隆浩、成塚 重弥
    • Organizer
      第62回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Single-Walled Carbon Nanotube Growth under Low Ethanol Pressure by the Gas Source Method: Comparison between Pt and Co Catalysts

    • Author(s)
      T. Maruyama, N. Fukuoka, H. Kondo, Y. Mizutani, S. Naritsuka, S. Iijima (T. Maruyama)
    • Organizer
      IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
    • Place of Presentation
      横浜市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] SiC表面分解法により形成した垂直配向カーボンナノチューブのNEXAFS測定

    • Author(s)
      丸山隆浩,石黒祐樹,榊原悟史,成塚重弥,乗松 航,楠美智子,雨宮健太,石井秀司,太田俊明 (丸山隆浩)
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      松山市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] NEXAFS Study of Carbon Nanotube Alignment formed by Surface Decomposition of SiC

    • Author(s)
      Y. Ishiguro, S. Sakakibara, S. Naritsuka, W. Norimatsu, M. Kusunoki, K. Amemiya, H. Ishii, T. Ohta, T. Maruyama  (T. Maruyama)
    • Organizer
      IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
    • Place of Presentation
      横浜市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] EB蒸着法により作製したPt触媒を用いた高真空アルコールガスソース法によるSWNT成長

    • Author(s)
      近藤弘基,福岡直也,Ghosh Ranajit,成塚重弥,丸山隆浩,飯島澄男 (丸山隆浩)
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      厚木市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Al2O3バリア層、Auキャップ層を用いた析出法における 高品質多層グラフェン生成に与えるアニール時間の効果

    • Author(s)
      山田 純平、鈴木 学、上田 悠貴、丸山 隆浩、成塚 重弥
    • Organizer
      第62回 応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] Relationship between surface supersaturation and vertical growth rate in GaAs microchannel epitaxy

    • Author(s)
      M. Tomita, T. Takakura, Y. Mizuno, M. Iwakawa, D. Kanbayashi, S. Naritsuka, and T. Maruyama
    • Organizer
      The 45th Annual Conference of British Association for Crystal Growth (BACG2014)
    • Place of Presentation
      Leeds, England
    • Year and Date
      2014-07-13 – 2014-07-15
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth mechanism of Single-Walled Carbon Nanotubes from Pt catalysts by alcohol catalytic CVD

    • Author(s)
      Takahiro Maruyama, Hiroki Kondo, Akinari Kozawa, Takahiro Saida, Shigeya Naritsuka, Sumio Iijima
    • Organizer
      2014MRS Fall Meeting
    • Place of Presentation
      Hynes Convention Center, Boston, MA, USA
    • Year and Date
      2014-12-01 – 2014-12-06
    • Data Source
      KAKENHI-PROJECT-25600031
  • [Presentation] メサ加工テンプレート基板を用いた電流制御型液相成長によるGaN横方向成長

    • Author(s)
      高倉宏幸, 冨田将史, 神林大介, 岩川宗樹, 水野陽介, 山田純平, 安井亮太, 丸山隆浩, 成塚重弥
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学、北海道
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] 高真空アルコールガスソース法によるPt触媒からのSWNT成長

    • Author(s)
      福岡直也,水谷芳裕,近藤弘基,Ghosh Ranajit,成塚重弥,丸山隆浩,飯島澄男 (丸山隆浩)
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      松山市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Relationship between surface supersaturation and vertical growth rate in GaAs microchannel epitaxy

    • Author(s)
      M. Tomita, T. Takakura, Y. Mizuno, M. Iwakawa, D. Kanbayashi, S. Naritsuka, and T. Maruyama
    • Organizer
      The 45th Annual Conference of British Association for Crystal Growth (BACG2014)
    • Place of Presentation
      Leeds, England
    • Year and Date
      2014-07-13 – 2014-07-15
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] SWNT growth from Pt catalysts on Al2Ox buffer layer by Alcohol Gas Source Method in High Vacuum

    • Author(s)
      Naoya Fukuoka, Hiroki Kondo, Yuya Sawaki, Ranajit Ghosh, Shigeya Naritsuka, Takahiro Maruyama (T. Maruyama)
    • Organizer
      第44回フラーレン・ナノチューブ・グラフェン総合シンポジウム
    • Place of Presentation
      東京都文京区
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] GaAs MCEにおけるらせんステップ源による法線成長速度決定メカニズム

    • Author(s)
      水野 陽介、冨田 将史、高倉 宏幸、岩川 宗樹、神林 大介、丸山 隆浩、成塚 重弥
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学、神奈川
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-26600089
  • [Presentation] Effect of N_2 micro plasma treatment on initial growth of GaN by MOMBE

    • Author(s)
      Yohei Suzuki, Toshihiro Inagaki, Shota Uchiyama, Takahiro Maruyama, Shigeya Naritsuka, Yuuta Noma, Shogo Kaneda, and Kazuo Shimizu
    • Organizer
      International Workshop on Nitrides Semiconductors 2014 (IWN2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth of multilayer graphene by hybrid method of alcohol CVD and precipitation

    • Author(s)
      Shigeya Naritsuka
    • Organizer
      25th International Conference on Diamond and Carbon Materials
    • Place of Presentation
      Madrid, Spain
    • Year and Date
      2014-09-07 – 2014-09-11
    • Data Source
      KAKENHI-PLANNED-26105002
  • [Presentation] SiC表面分解法による4H-SiC上へのCNT形成とCNT/4H-SiCヘテロ界面の電気的特性

    • Author(s)
      矢嶋孝敏,成塚重弥,丸山隆浩 (丸山隆浩)
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      厚木市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Electric Property of CNT/n-type 6H-SiC Heterojunctions formed by Surface Decomposition of SiC

    • Author(s)
      T. Yajima, S. Sakakibara, S. Naritsuka, T. Maruyama (T. Maruyama)
    • Organizer
      25th International Microprocesses and Nanotechnology Conference (MNC 2012)
    • Place of Presentation
      神戸市
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Temperature dependence study of SWNT growth using Pt catalyst in Alcohol Gas Source Method in High vacuum

    • Author(s)
      N. Fukuoka, Y. Mizutani, H. Kondo, S. Naritsuka, T. Maruyama, S. Iijima (T. Maruyama)
    • Organizer
      The Annual World Conference on Carbon (Carbon 2012)
    • Place of Presentation
      クラクフ(ポーランド)
    • Data Source
      KAKENHI-PROJECT-21510119
  • [Presentation] Precipitation of High-Quality Multilayer-Graphene Using Al2O3 Barrier and Au Cap Layers

    • Author(s)
      Jumpei Yamada, Manabu Suzuki, Yuki Ueda, Takahiro Maruyama, Shigeya Naritsuka
    • Organizer
      2015 Matereials Research Symposium (MRS) Spring Meeting & Exhibit
    • Place of Presentation
      San Fransisco, USA
    • Year and Date
      2015-04-05 – 2015-04-10
    • Data Source
      KAKENHI-PLANNED-26105002
  • 1.  MARUYAMA Takahiro (30282338)
    # of Collaborated Projects: 12 results
    # of Collaborated Products: 483 results
  • 2.  NISHINAGA Tatau (10023128)
    # of Collaborated Projects: 11 results
    # of Collaborated Products: 0 results
  • 3.  TANAKA Masaaki (30192636)
    # of Collaborated Projects: 9 results
    # of Collaborated Products: 0 results
  • 4.  KAMIYAMA Satoshi (10340291)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 5.  AMANO Hiroshi (60202694)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  SAIDA TAKAHIRO (90710905)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 48 results
  • 7.  TACHIKAWA Masami
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  MORI Hidefumi
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  TANAKA SHIN-ICHIRO (00227141)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 10.  Fukumura Tomoteru (90333880)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  Honda Yoshio (60362274)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  DEKI Manato (80757386)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  OHNO Yutaka (10324451)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  MIYAKE Hideto (70209881)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  TAKEUCHI Tetsuya (10583817)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  IWAYA Motoaki (40367735)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  FUKUYAMA Hiroyuki (40252259)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  NAKANO Yoshiaki (50183885)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  ANDO Yoshinori (30076591)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  Miyajima Takao (50734836)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 21.  内富 直隆 (20313562)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  白方 祥 (10196610)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 23.  Lippmaa Mikk (10334343)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  田中 成泰 (70217032)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  ゲルハルト ファーソル (10251472)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 26.  清水 一男 (90282681)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 27.  今井 大地 (20739057)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 28.  今西 正幸 (00795487)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 29.  HIROSE Yasushi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 30.  ASAKAWA Kiyoshi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 31.  HUO C.
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 32.  GE P.
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 33.  NIE Y.
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 34.  NIE Yuxin
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 35.  GE Peiwen
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 36.  HUO Chongru
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 37.  HUO C
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 38.  GE P
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 39.  NIE Y
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 40.  BENZ K.W.
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 41.  REGEL L.L.
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 42.  WILCOX W.R.
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 43.  GHOSH Ranajit
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 3 results

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