Matsumura Ryo 松村亮

… Alternative Names

MATSUMURA Ryo 松村亮

Less

Researcher Number	90806358
Other IDs
Affiliation (Current)	2025: 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 主任研究員
Affiliation (based on the past Project Information) *help	2023 – 2024: 国立研究開発法人物質・材料研究機構, ナノアーキテクトニクス材料研究センター, 主任研究員 2020 – 2022: 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 研究員 2017 – 2018: 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 研究員
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Basic Section 21060:Electron device and electronic equipment-related / Electronic materials/Electric materials Except Principal Investigator Medium-sized Section 28:Nano/micro science and related fields
Keywords	Principal Investigator 結晶成長 / 半導体 / ゲルマニウム / ナノワイヤ / 光デバイス / ゲルマニウムスズ / 光学デバイス / 電子デバイス / Siナノワイヤ / スズ … More / シリコン / 疑似単結晶薄膜 / 金属誘起層交換成長 / 疑似単結晶テンプレート / VLS法 / 金属触媒成長 / 太陽電池 / 薄膜 / 半導体ナノワイヤ … More Except Principal Investigator トランジスタ / ゲルマニウム / シリコン / ナノワイヤ Less

光電融合LSIへ向けた絶縁膜上におけるGe系光学材料の結晶成長と光電デバイス応用Principal Investigator
- Principal Investigator
  
  松村亮
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  National Institute for Materials Science
Development of vertical HEMT-type devices using Si-Ge core-shell heterojunction nanowires
- Principal Investigator
  
  深田直樹
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  National Institute for Materials Science
Realize of GeSn/Ge vertical nanowire and its application to next generation transitorPrincipal Investigator
- Principal Investigator
  
  MATSUMURA Ryo
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  National Institute for Materials Science
Bottom up growth of Si based nanowires on insulating substratesPrincipal Investigator
- Principal Investigator
  
  Matsumura Ryo
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  National Institute for Materials Science

All 2024 2023 2022 2021 2020 2018

All Journal Article Presentation

[Journal Article] Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications2023
- Author(s)
  Saputro Rahmat Hadi、Maeda Tatsuro、Matsumura Ryo、Fukata Naoki
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 162 Pages: 107516-107516
- DOI
  10.1016/j.mssp.2023.107516
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K14796, KAKENHI-PROJECT-23K13370, KAKENHI-PROJECT-21H04642
[Journal Article] Synthesis of Large-Area GeS Thin Films with the Assistance of Pre-deposited Amorphous Nanostructured GeS Films: Implications for Electronic and Optoelectronic Applications2023
- Author(s)
  Zhang Qinqiang、Matsumura Ryo、Fukata Naoki
- Journal Title
  
  ACS Applied Nano Materials
  
  Volume: xxxx Issue: 8 Pages: 6920-6928
- DOI
  10.1021/acsanm.3c00669
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K14796, KAKENHI-PROJECT-21K20393, KAKENHI-PROJECT-23K13370, KAKENHI-PROJECT-21H04642
[Journal Article] Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing2022
- Author(s)
  Saputro Rahmat Hadi、Matsumura Ryo、Fukata Naoki
- Journal Title
  
  ECS Transactions
  
  Volume: 108 Issue: 5 Pages: 79-82
- DOI
  10.1149/10805.0079ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04642, KAKENHI-PROJECT-20K14796
[Journal Article] Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention2022
- Author(s)
  Matsumura Ryo、Fukata Naoki
- Journal Title
  
  ACS Applied Materials and Interfaces
  
  Volume: 14 Issue: 1 Pages: 1472-1477
- DOI
  10.1021/acsami.1c20660
- Data Source
  KAKENHI-PROJECT-20K14796
[Journal Article] Formation of Free Hydrogen Gas By Annealing ALD-Al<sub>2</sub>O<sub>3</sub>/Si Stacked Structure2022
- Author(s)
  Matsumura Ryo、Fukata Naoki
- Journal Title
  
  ECS Transactions
  
  Volume: 108 Issue: 5 Pages: 57-61
- DOI
  10.1149/10805.0057ecst
- Data Source
  KAKENHI-PROJECT-21H04642, KAKENHI-PROJECT-20K14796
[Journal Article] Sb 添加Ge 縦型pn ダイオードの電気特性に及ぼす基板加熱堆積の効果2021
- Author(s)
  ラハマトハディサプトロ, 松村亮, 深田直樹
- Journal Title
  
  電子デバイス界面テクノロジー研究会材料・プロセス・デバイス特性の物理プロシーディング集
  
  Volume: - Pages: 133-136
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K14796
[Journal Article] Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films2021
- Author(s)
  Saputro Rahmat Hadi、Matsumura Ryo、Fukata Naoki
- Journal Title
  
  Crystal Growth and Design
  
  Volume: 21 Issue: 11 Pages: 6523-6528
- DOI
  10.1021/acs.cgd.1c00966
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04642, KAKENHI-PROJECT-20K14796
[Journal Article] Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing2021
- Author(s)
  Matsumura Ryo、Ishii Satoshi、Fukata Naoki
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 134 Pages: 106024-106024
- DOI
  10.1016/j.mssp.2021.106024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04642, KAKENHI-PROJECT-20K14796
[Journal Article] Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications2021
- Author(s)
  Saputro Rahmat Hadi、Matsumura Ryo、Fukata Naoki
- Journal Title
  
  ECS Transactions
  
  Volume: 102 Issue: 2 Pages: 147-150
- DOI
  10.1149/10202.0147ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04642, KAKENHI-PROJECT-20K14796
[Journal Article] Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing2021
- Author(s)
  Matsumura Ryo、Fukata Naoki
- Journal Title
  
  ECS Transactions
  
  Volume: 102 Issue: 2 Pages: 141-146
- DOI
  10.1149/10202.0141ecst
- Data Source
  KAKENHI-PROJECT-20K14796
[Journal Article] Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing2021
- Author(s)
  Matsumura Ryo、Fukata Naoki
- Journal Title
  
  ECS Meeting Abstracts
  
  Volume: MA2021-01 Issue: 30 Pages: 1016-1016
- DOI
  10.1149/ma2021-01301016mtgabs
- Data Source
  KAKENHI-PROJECT-21H04642
[Journal Article] 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成長2021
- Author(s)
  松村亮, 深田直樹
- Journal Title
  
  電子デバイス界面テクノロジー研究会材料・プロセス・デバイス特性の物理プロシーディング集
  
  Volume: - Pages: 63-66
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K14796
[Journal Article] Self-organized〈1 0 0〉direction growth of germanium film on insulator obtained by high speed continuous wave laser annealing2021
- Author(s)
  Matsumura Ryo、Fukata Naoki
- Journal Title
  
  Materials Letters
  
  Volume: 288 Pages: 129328-129328
- DOI
  10.1016/j.matlet.2021.129328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04642, KAKENHI-PROJECT-20K14796
[Journal Article] Growth of Tensile Strained Poly Germanium Thin Film on Glass Substrates by High Speed Continuous Wave Laser Annealing, and its Application to Germanium-Tin2020
- Author(s)
  Matsumura Ryo、Fukata Naoki
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 9 Issue: 6 Pages: 063002-063002
- DOI
  10.1149/2162-8777/aba4f1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] Synthesis of Large-Area GeS Thin Films Using Vapor Transport Method2024
- Author(s)
  張秦強，松村亮，深田直樹
- Organizer
  春季第71回応用物理学関係連合講演会
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Temperature Dependence of GeS Crystallization by Using a Vapor Transport Method2023
- Author(s)
  Qinqiang ZHANG, Ryo MATSUMURA, Naoki FUKATA
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] High-Speed Continuous Wave Laser Annealing: Non-equilibrium growth of Highly-Strained Germanium-Based Materials2023
- Author(s)
  MATSUMURA, Ryo, SAPUTRO, Rahmat Hadi, FUKATA, Naoki
- Organizer
  MRM2023/IUMRS-ICA2023. 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13370
[Presentation] Temperature dependence of GeS crystallization by vapor transport method2023
- Author(s)
  Qinqiang Zhang, Ryo Matsumura and Naoki Fukata
- Organizer
  春季第70回応用物理学関係連合講演会
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Optical Property Enhancement through Alloying in High-Speed CWLA-Grown n-type Ge-based Materials2023
- Author(s)
  Rahmat Hadi Saputro, Ryo Matsumura, Tatsuro Maeda, and Naoki Fukata
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Temperature Dependence of GeS Crystallization by Using a Vapor Transport Method2023
- Author(s)
  張秦強, 松村亮，深田直樹
- Organizer
  秋季第84回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] CWレーザーアニールによる高歪みn型Geのバンド構造解析2023
- Author(s)
  ラハマトハディサプトロ，松村亮，前田辰郎,深田直樹
- Organizer
  春季第70回応用物理学関係連合講演会
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge1-xSnx Grown on Ge(100)2023
- Author(s)
  Rahmat Hadi Saputro, Tatsuro Maeda , Ryo Matsumura , and Naoki Fukata
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Growth speed dependence on growth feature of n-Ge thin films fabricated by high-speed CW laser annealing2023
- Author(s)
  Rahmat Hadi Saputro, Ryo Matsumura, Tatsuro Maeda, and Naoki Fukata
- Organizer
  EM-NANO 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Effect of amorphous GeS on the morphology of crystallized GeS by vapor transport method2023
- Author(s)
  ZHANG, Qinqiang, MATSUMURA, Ryo, FUKATA, Naoki
- Organizer
  2023年第84回応用物理学会秋季学術講演会. 2023
- Data Source
  KAKENHI-PROJECT-23K13370
[Presentation] 高速 CW レーザアニルによる n型 Si0.1Ge0.9薄膜の結晶成長2023
- Author(s)
  ラハマトハディサプトロ，松村亮，前田辰郎, 深田直樹
- Organizer
  秋季第84回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Growth of Germanium-based crystals on insulating substrates by non-equilibrium approach.2023
- Author(s)
  MATSUMURA, Ryo, FUKATA, Naoki.
- Organizer
  EM-NANO2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13370
[Presentation] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge1-xSnx Grown on Ge(100)2023
- Author(s)
  SAPUTRO, Rahmat Hadi, 前田辰郎, MATSUMURA, Ryo, FUKATA, Naoki.
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13370
[Presentation] Crystallization of n-type Si0.1Ge0.9 thin films by high-speed CW laser annealing.2023
- Author(s)
  SAPUTRO, Rahmat Hadi, MATSUMURA, Ryo, 前田辰郎, FUKATA, Naoki
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K13370
[Presentation] Formation of Free Hydrogen Gas by Annealing ALD-Al2O3/Si stacked structure2022
- Author(s)
  Ryo Matsumura and Naoki Fukata
- Organizer
  The 241st ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Optical properties of highly strained n-Ge films grown by CW laser annealing2022
- Author(s)
  R Hadi Saputro, Ryo Matsumura, Naoki Fukata
- Organizer
  応用物理学会
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] Realization of Highly-Strained n-type Ge-on-Insulator by CW Laser Annealing2022
- Author(s)
  R Hadi Saputro, Ryo Matsumura, Naoki Fukata
- Organizer
  SSDM
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] Crystallization of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing2022
- Author(s)
  Rahmat Hadi Saputro, Ryo Matsumura and Naoki Fukata
- Organizer
  The 241st ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Formation2021
- Author(s)
  Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata
- Organizer
  The 239sh ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Sb添加Ge縦型pnダイオードの電気特性に及ぼす基板加熱堆積の効果2021
- Author(s)
  サプトロラハマトハディ, 松村亮, 深田直樹
- Organizer
  第26回電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成⻑2021
- Author(s)
  松村亮, 深田直樹
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第26回研究会)
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Formation2021
- Author(s)
  Saputro Rahmat Hadi, MATSUMURA, Ryo, FUKATA, Naoki
- Organizer
  239th ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] Sb添加Ge縦型pnダイオードの電気特性に及ぼす基板加熱堆積の効果. 第26回電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理2021
- Author(s)
  サプトロラハマトハディ, 松村亮, 深田直樹
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第26回研究会)
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] Growth of high Sn concentration Germanium-tin films on insulators by microsecond laser annealing2021
- Author(s)
  R. Matsumura, N. Fukata
- Organizer
  The 239sh ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04642
[Presentation] Growth of high Sn concentration Germanium-tin films on insulators by microsecond laser annealing2021
- Author(s)
  MATSUMURA, Ryo, FUKATA, Naoki
- Organizer
  239th ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成長2021
- Author(s)
  松村亮, 深田直樹
- Organizer
  電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理― (第26回研究会)
- Data Source
  KAKENHI-PROJECT-20K14796
[Presentation] Single domain poly-Si film on insulating substrate by limited region aluminum induced layer exchange growth2018
- Author(s)
  松村亮王云帆 JEVASUWANWipakorn 深田直樹
- Organizer
  EMRS2018Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H07351
[Presentation] Growth of Au/Sn-catalyzed Ge 1-x Sn x nanowires with high Sn content (~5 at.%)2018
- Author(s)
  孫永烈松村亮 JEVASUWANWipakorn 深田直樹
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H07351
[Presentation] The Structural Controlled SiNWs by Wet and Dry Etching Processes for Photovoltaic Applications2018
- Author(s)
  JEVASUWANWipakorn CHENJunyi SUBRAMANIThiyagu PRADELKen Kei Shinotsuka Yoshihisa Hatta 武井俊朗松村亮深田直樹
- Organizer
  EMRS2018Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H07351

1. 深田直樹 (90302207)

# of Collaborated Projects: 1 results

# of Collaborated Products: 20 results
2. J. Wipakorn (40748216)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 宮崎剛 (50354147)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 本久順一 (60212263)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 冨岡克広 (60519411)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Matsumura Ryo 松村 亮

MATSUMURA Ryo 松村 亮

Research Projects

Research Products

Co-Researchers

光電融合LSIへ向けた絶縁膜上におけるGe系光学材料の結晶成長と光電デバイス応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of vertical HEMT-type devices using Si-Ge core-shell heterojunction nanowires

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Realize of GeSn/Ge vertical nanowire and its application to next generation transitorPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Bottom up growth of Si based nanowires on insulating substratesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Synthesis of Large-Area GeS Thin Films with the Assistance of Pre-deposited Amorphous Nanostructured GeS Films: Implications for Electronic and Optoelectronic Applications2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Direct Detection of Free H2 Outgassing in Blisters Formed in Al2O3 Atomic Layers Deposited on Si and Methods of Its Prevention2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Formation of Free Hydrogen Gas By Annealing ALD-Al<sub>2</sub>O<sub>3</sub>/Si Stacked Structure2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Sb 添加Ge 縦型pn ダイオードの電気特性に及ぼす基板加熱堆積の効果2021

Author(s)

Journal Title

Data Source

[Journal Article] Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing2021

Author(s)

Matsumura Ryo 松村亮

MATSUMURA Ryo 松村亮

[Presentation] 高速 CW レーザアニルによる n型 Si0.1Ge0.9薄膜の結晶成長2023