AHMET Parhat アヘメトパールハット

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PARHAT Ahmet パールハットアヘメト

AHMET PARHAT アヘメトパールハット

PARHAT AHMET パールハットアヘメト

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Researcher Number	00418675
Affiliation (based on the past Project Information) *help	2010 – 2011: 東京工業大学, フロンティア研究機構, 特任准教授 2009: 東京工業大学, フロンティア研究センター, 特任准教授 2007 – 2008: Tokyo Institute of Technology, フロンティア研究センター, 助教 2006: 東京工業大学, フロンティア創造共同研究センター, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Principal Investigator La_2O_3 / MOSキャパシタ / CMOS / 仕事関数 / La203 / トランジスタ / ランタンオキサイド / 電極材料 / メタルゲート / 希土類酸化物 / 高誘電率絶縁膜 … More Except Principal Investigator … More 表面・界面物性 / 固定電荷 / 価数変化 / シリケート / 界面ダイポール / 半導体 / 高誘電体薄膜 / Niシリサイド / 短チャネル効果 / エネルギー障壁 / drain / Schottky source / しきい値 / 三次元構造MOSFET / 数値解析 / ショットキー接合 / 3次元 / MOSFET / オン電流 / ショットキー / 特性ばらつき / ロバストネス / 3次元構造 / トランジスタ / 感度解析 / シリサイド / FinFET / ダブルゲート / CMOS / ゆらぎ / ばらつき Less

Comprehensive Observation of Interface dipoles at Insulator Semiconductor Interface
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tokyo Institute of Technology
Robustness of Three-Dimensional MOSFETs
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Metal gate materials exploration for future CMOS TechnologyPrincipal Investigator
- Principal Investigator
  
  AHMET Parhat
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology

All 2012 2011 2010 2009 2008 2007 2006

All Journal Article Presentation Patent

[Journal Article] Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics2012
- Author(s)
  H.Wong, B.L.Yang, K.Kakushima, P.Ahmet, H.Iwai
- Journal Title
  
  Vacuum
  
  Volume: 86 Pages: 990-993
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] CovalentNature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012
- Author(s)
  T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  IEEEElectron Dev. Lett
  
  Volume: Vol.33 Pages: 423-425
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Valence number transition and silicate formation of cerium oxide films onSi(100)2012
- Author(s)
  M. Mamatrishat, M. Kouda, K. Kakushima, H. Nohira, P. Ahmet, Y. Kataoka, A. Nishiiyama, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Vacuum
  
  Volume: Vol.86 Pages: 1513-1516
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012
- Author(s)
  T.Kawanago, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 33 Issue: 3 Pages: 423-425
- DOI
  10.1109/led.2011.2178111
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012
- Author(s)
  T.Kawanago, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 59 Issue: 2 Pages: 269-276
- DOI
  10.1109/ted.2011.2174442
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Properties of CeO_x/La_2O_3 gate dielectric and its effects on the MOS transistor characteristics2012
- Author(s)
  H. Wong, B. L. Yang, K. Kakushima, P. Ahmet, H. Iwai
- Journal Title
  
  Vacuum
  
  Volume: Vol.86 Pages: 990-993
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Valence number transition and silicate formation of cerium oxide films on Si(100)2012
- Author(s)
  M. Mamatrishat
- Journal Title
  
  Vacuum
  
  Volume: 86(10) Issue: 10 Pages: 1513-1516
- DOI
  10.1016/j.vacuum.2012.02.050
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003, KAKENHI-PROJECT-21246008
[Journal Article] EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012
- Author(s)
  T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: Vol.59 Pages: 269-276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Rareearth oxide capping effect on La_2O_3 gatedielectrics for equivalent oxidethickness scaling toward 0. 5 nm2011
- Author(s)
  M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011
- Author(s)
  T. Kawanago, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Solid-StateElectron
  
  Volume: Vol.68 Pages: 68-72
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5 nm2011
- Author(s)
  M.Kouda, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  Japanese Journal of Applied Physcis
  
  Volume: 50
- NAID
  210000071407
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices2011
- Author(s)
  M.Kouda, T.Kawanago, P.Ahmet, K.Natori,T.Hattori, H.Iwai, K.Kakushima, A.Nishiyama, N.Sugii, K.Tsutsui
- Journal Title
  
  Journal of Vacuum Science & Technology
  
  Volume: 29 Issue: 6 Pages: 62202-62202
- DOI
  10.1116/1.3660800
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011
- Author(s)
  T.Kawanago, Y.Lee, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  Solid-State Electronics
  
  Volume: 68 Pages: 68-72
- DOI
  10.1016/j.sse.2011.10.006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Interface and electrical properties of Tm_2O_3 gate dielectrics for gate oxide scaling in MOS devices2011
- Author(s)
  M. Kouda, T. Kawanago, P. Ahmet, K. Natori, T. Hattori, H. Iwai, K. Kakushima, A. Nishiyama, N. Sugii, K. Tsutsui
- Journal Title
  
  J. Vac. Sci. Technol. B
  
  Volume: Vol.29 Pages: 62202-62202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors : Separation of Short Channel Effects2010
- Author(s)
  Y.Kobayashi, K.Tsutsui, K.Kakushima, P.Ahmet, V.P.Rao, H.Iwai
- Journal Title
  
  Japanese Journal of Applied Physics 49(掲載決定)
- NAID
  40017085077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness2010
- Author(s)
  Y. Kobayasih, K. Kakushima, P. Ahmet, V.R. Rao, K. Tsutsui, H. Iwai
- Journal Title
  
  Microelectronics Reliability Vol.50
  
  Pages: 332-337
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Characterization of flatband voltage roll-off and roll-up behavior in La_2O_3/silicat gate dielectric2010
- Author(s)
  K. Kakushima, T. Koyanagi, K. Tachi, J. Song, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  Solid-State Electron
  
  Volume: Vol54 Pages: 720-723
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness2010
- Author(s)
  Y.Kobayashi, K.Kakushima, P.Ahmet, V.R.Rao, K.Tsutui, H.Iwai
- Journal Title
  
  Microelectronics Reliability 50
  
  Pages: 332-337
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Electrical Characteristics of Rare Earth(La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric2010
- Author(s)
  K. Matano, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  ECSTrans
  
  Volume: Vol.27 Pages: 1120-1134
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects2010
- Author(s)
  Y. Koyabashi, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys Vol.49
  
  Pages: 44201-44201
- NAID
  40017085077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ch, orkar, T. Hattori, H. Iwai
- Journal Title
  
  ECS Trans Vol.16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K.Noguchi, W.Hosoda, K.Matano, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, A.N.Chandorkar, T.Hattori, H.Iwai
- Journal Title
  
  ECS Transactions 16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Crystallographic Orientation Dependent Electrical Characteristics of La_2O_3 MOS Capacitors2009
- Author(s)
  H. Nakayama, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  ECS Trans
  
  Volume: Vol.25 Pages: 339-345
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi_22008
- Author(s)
  Kazuo Tsutsui, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai
- Journal Title
  
  Microelectronic Engineering 85
  
  Pages: 315-319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Thermal Stability of Ni-silicide Films on Heavily Doped n^+ and P^+ Si Substrates2008
- Author(s)
  Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow and Hiroshi Iwai
- Journal Title
  
  Microelectronic Engineering in press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack2008
- Author(s)
  P. Ahmet, K. Nakagawa, K. Kakushima, H. Nohira, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  Microelectronics Reliability 48
  
  Pages: 1769-1771
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560298
[Journal Article] Thermal Stability of Ni silicide Films on Heavily Doped n+ and p+ Si Substrates2008
- Author(s)
  P. Ahmet, T. Shiozawa, K. Nagahiro, T. Nagata, K. Kakushima, K. Tsutsui, T. Chikyo, H. Iwai
- Journal Title
  
  Microelectronic Engineering Vol.85
  
  Pages: 1642-1645
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic effects in multi-gate MOSFETs2007
- Author(s)
  Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
- Journal Title
  
  IEICE Transactions E90-C
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, and H. Iwai
- Journal Title
  
  ECS Transaction Vol. 6, No. 4
  
  Pages: 83-88
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic effects in multi-gate MOSFETs2007
- Author(s)
  Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
- Journal Title
  
  IEICE Transactions vol. E90-C, No.10
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
- Journal Title
  
  ECS Transaction 6
  
  Pages: 83-88
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes2007
- Author(s)
  K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahmet, K. Kakushima and H. Iwai
- Journal Title
  
  ECS Transaction 11
  
  Pages: 207-213
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y.Kobahashi, K.Tsutsui, K.Kakushima, V.Hariharan, V.R.Rao, P.Ahmet, H.Iwai
- Journal Title
  
  SOI Device Technology 13 (ECS Transaction-Chicago) 3(出版予定)(掲載決定)
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects in Multi-gate MOSFETs2007
- Author(s)
  Y.Kobayashi, C.R.Manoj, K.Tsutsui, V.Hariharan, K.Kakushima, V.R.Rao, P.Ahmet, H.Iwai
- Journal Title
  
  IEICE Transactions on Electronics (出版予定)(掲載決定)
- NAID
  110007541196
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects in Multi-gate MOSFETs2007
- Author(s)
  Y. Kobayashi, V.R. Manoj, K. Tsutsui, V. Hariharan, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
- Journal Title
  
  IEICE Trans. on Electronics Vol.E90-C
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Patent] 半導体装置及びコンデンサ2007
- Inventor(s)
  パールハットアヘメト、岩井洋、服部健雄、筒井一生、角嶋邦之、知京豊裕
- Filing Date
  2007-03-06
- Data Source
  KAKENHI-PROJECT-18560298
[Presentation] 酸化膜中のSiナノワイヤにおけるNi拡散の制御2010
- Author(s)
  茂森直登, 新井英明, 佐藤創志, 角嶋クニユキ, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer2010
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  China Semiconductor Technology International Conference(CSTIC)
- Place of Presentation
  上海、中国
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs2010
- Author(s)
  P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, K. Tsutsui, H. Iwai
- Organizer
  10th Int. Workshop on Junction Technology (IWJT2010)
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-05-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] A Study of Schottky Barrier Height Modulation of NiSi by Interlayer In sertion and Its Application to SOI SB-MOSFETs2009
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB一MOSFETへの応用2009
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用II2009
- Author(s)
  小澤健児, 細田亘, 角嶋邦之, アヘメトパールハット, 筒井一生, 西山彰, 杉井信之, 服部健雄, 名取研二, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Short-channel effects on FinFETs induced by inappropriate fin widths2009
- Author(s)
  Y.Kobayashi, K.Kakushima, P.Ahmet, V.Ramgopal Rao, K.Tsutsui, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETの構造ばらつきによるオン電流のばらつきの検討2009
- Author(s)
  小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Annealing Reaction for Ni Silicidation of Si Nanowire2009
- Author(s)
  H.Arai, H.Kamimura, S.Sato, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  216^<th> Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 2stepアニールを用いた酸化膜中のSiナノワイヤへのNiシリサイド化2009
- Author(s)
  茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  又野克哉, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETの閾値変動における短チャネル効果による影響の切り分け2008
- Author(s)
  小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects2008
- Author(s)
  Yusuke Kobayashi, Kazuo Tsutsui, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
- Organizer
  Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETにおけるショートチャネル効果のフィン幅依存性2008
- Author(s)
  小林勇介, 角嶋邦之, パールハットアヘメト, ラムゴパルラオ, 筒井一生, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs: Separation of Short Channel Effects and Space Charge Effects2008
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
- Organizer
  Int. Conf. on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  Ibaraki, Japan
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A.N. Chandorkar, T. Hattori, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsu i, N. Sugii, A. N. Chandorkar, T. Hattori, and H. Iwai
- Organizer
  Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects2008
- Author(s)
  Y. Kobayashi, A.B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用2008
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 高濃度n^+-Si及びp^+-Si基板上のNiシリサイドの熱安定性の違い2008
- Author(s)
  アヘメトパールハット, 角嶋邦之, 長田貴弘, 筒井一生, 杉井信之, 知京豊裕, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects2008
- Author(s)
  Yusuke Kobayashi, Kazuo Tsutsui, K uniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
- Organizer
  Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2008-09-26
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Improvement of Thermal Stability of Ni Silicide on N^+-Si by Direct Deposition of Group III Element (A1,B) Thin Film at Ni/Si Interface2008
- Author(s)
  K. Tsutsui, T. Shiozawa, K. Nagahiro, Y. Ohishi, K. Kakushima, P. Ahmet, N. Urushihara, M. Suzuki, and H. Iwai
- Organizer
  Materials for Advanced Metalization (MAM2008)
- Place of Presentation
  Dresden, Germany
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects2008
- Author(s)
  Y. Kobayashi, Angada B. Sachidc, K. Tsutsui, K. Kakushima, P. Ahmet, V. Ramgopal Rao and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers2008
- Author(s)
  Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, and Hiroshi Iwai
- Organizer
  7th Int. Semiconductor Technology Conference (ECS-ISTC2008)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
- Organizer
  211th ECS Meeting
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討2007
- Author(s)
  小林勇介, 角嶋邦之, Ahmet P., Rao V.R., 筒井一生, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 極薄Er層を界面に挿入したNiSi/p-Siショットキー障壁の熱処理温度依存性2007
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] La-based oxides for High-k Gate Dielectric Application2006
- Author(s)
  P. Ahmet, K. Kakushima, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Organizer
  ICSICT-2006
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18560298

1. IWAI Hiroshi (40313358)

# of Collaborated Projects: 2 results

# of Collaborated Products: 62 results
2. KAKUSHIMA Kuniyuki (50401568)

# of Collaborated Projects: 2 results

# of Collaborated Products: 62 results
3. HATTORI Takeo (10061516)

# of Collaborated Projects: 1 results

# of Collaborated Products: 18 results
4. TSUTSUI Kazuo (60188589)

# of Collaborated Projects: 1 results

# of Collaborated Products: 44 results

AHMET Parhat アヘメト パールハット

PARHAT Ahmet パールハット アヘメト

AHMET PARHAT アヘメト パールハット

PARHAT AHMET パールハット アヘメト

Research Projects

Research Products

Co-Researchers

Comprehensive Observation of Interface dipoles at Insulator Semiconductor Interface

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Robustness of Three-Dimensional MOSFETs

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Metal gate materials exploration for future CMOS TechnologyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics2012

Author(s)

Journal Title

Data Source

[Journal Article] CovalentNature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012

Author(s)

Journal Title

Data Source

[Journal Article] Valence number transition and silicate formation of cerium oxide films onSi(100)2012

Author(s)

Journal Title

Data Source

[Journal Article] Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Properties of CeO_x/La_2O_3 gate dielectric and its effects on the MOS transistor characteristics2012

Author(s)

Journal Title

Data Source

[Journal Article] Valence number transition and silicate formation of cerium oxide films on Si(100)2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012

Author(s)

Journal Title

Data Source

[Journal Article] Rareearth oxide capping effect on La_2O_3 gatedielectrics for equivalent oxidethickness scaling toward 0. 5 nm2011

Author(s)

Journal Title

Data Source

[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011

Author(s)

Journal Title

Data Source

[Journal Article] Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5 nm2011

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices2011

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011

Author(s)

AHMET Parhat アヘメトパールハット

PARHAT Ahmet パールハットアヘメト

AHMET PARHAT アヘメトパールハット

PARHAT AHMET パールハットアヘメト