Fujinoki Takahide 藤ノ木享英 (梅田享英)

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梅田享英

藤ノ木享英(梅田享英) フジノキタカヒデ

藤ノ木享英フジノキタカヒデ

UMEDA Takehide 梅田享英

梅田享英ウメダタカヒデ

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Researcher Number	10361354
Other IDs
Affiliation (Current)	2025: 筑波大学, 数理物質系, 准教授
Affiliation (based on the past Project Information) *help	2017 – 2024: 筑波大学, 数理物質系, 准教授 2012 – 2016: 筑波大学, 数理物質科学研究科(系), 准教授 2013 – 2015: 筑波大学, 数理物質系, 准教授 2007: University of Tsukuba, 大学院・図書館情報メディア研究科, 准教授 2006: 筑波大学, 大学院図書館情報メディア研究科, 助教授 2004 – 2005: 筑波大学, 大学院・図書館情報メディア研究科, 助教授
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / Electronic materials/Electric materials / Medium-sized Section 29:Applied condensed matter physics and related fields Except Principal Investigator Crystal engineering / Medium-sized Section 21:Electrical and electronic engineering and related fields / Applied materials science/Crystal engineering / Science and Engineering
Keywords	Principal Investigator MOS界面 / 炭化ケイ素 / 電子スピン共鳴分光 / MOSFET / 4H-SiC / 電子スピン共鳴 / MOS界面欠陥 / GaN / 第一原理計算 / 窒化ガリウム … More / ワイドギャップ半導体 / 移動度劣化 / ESR / 界面欠陥 / 閾値変動 / 界面準位 / パワーエレクトロニクス / シリコン / 2値現象 / Variable Retention Time / DRAM / 電流検出電子スピン共鳴 / IV族系半導体 / 炭素ダングリングボンド / PbCセンター / BVセンター / スピン欠陥 / 電流検出型電子スピン共鳴 / 電流検出 / ダイヤモンド / スピン依存チャージポンピング / 電流検出型電子スピン共鳴分光 / SiC / ダングリングボンド / しきい値シフト / 界面水素 / チャネルドーピング / 界面窒素 / EDMR / しきい値電圧 / 電流検出ESR法 / ESR法 / 電界効果トランジスタ / 酸化膜界面 / チャネル移動度 / 空孔-酸素複合欠陥 / フッ素 / 双安定性 / 微細MOSFET / 点欠陥 / 集積回路 / 結晶欠陥 / シリコン集積回路 … More Except Principal Investigator 半導体物性 / 放射線 / 光物性 / 格子欠陥 / 結晶工学 / 炭化ケイ素 / 量子コンピュータ / 移動度キラー / 局在 / 界面 / 電子状態計算 / 有効質量近似 / 界面処理 / DFT / 虚時間発展法 / SiC-MOS / 界面欠陥 / SiC / 量子エレクトロニクス / 量子センシング / 単一光源欠陥中心 / 量子コンピューティング / 新機能材料 / スピン / 欠陥エンジニアリング / スピン緩和 / 燐ドナー / パルス電子スピン共鳴 / シリコン / ダイヤモンド / 電子スピン Less

Elucidation of SiC-MOS interfaces by developing electronic structure calculation methods
- Principal Investigator
  
  Matsushita Yu-ichiro
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
ワイドギャップ半導体MOS界面欠陥の正体の横断的解明Principal Investigator
- Principal Investigator
  
  藤ノ木享英 (梅田享英)
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  University of Tsukuba
Quantum state measurements of single photon sources in silicon carbide devices
- Principal Investigator
  
  Ohshima Takeshi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
Electron-spin-resonance characterization on interface defects at wide-gap semiconductor (SiC and GaN) MOS interfacesPrincipal Investigator
- Principal Investigator
  
  Umeda Takahide
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Control of Photons and Spins of High-Brightness Single Photon Center in Silicon Carbide
- Principal Investigator
  
  OHSHIMA Takeshi
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
  Japan Atomic Energy Agency
Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradationPrincipal Investigator
- Principal Investigator
  
  Fujinoki Takahide
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Tsukuba
Controlling of Single Photon Source in Silicon Carbide
- Principal Investigator
  
  OHSHIMA Takeshi
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Japan Atomic Energy Agency
電流検出電子スピン共鳴法によるシリコン微細デバイスの2値現象の観察Principal Investigator
- Principal Investigator
  
  梅田享英
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba
半導体電子スピン系量子コンピュータの要素技術の開発
- Principal Investigator
  
  磯谷順一
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
微細電子デバイス中の点欠陥に対する超高感度電子スピン共鳴スペクトロスコピーの研究Principal Investigator
- Principal Investigator
  
  梅田享英
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  University of Tsukuba

All 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2007 2006 Other

All Journal Article Presentation

[Journal Article] 電流検出ESRによるSiC中の欠陥検出のための＋αの研究技術2023
- Author(s)
  梅田享英
- Journal Title
  
  応用物理
  
  Volume: 93 Pages: 120-124
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00340
[Journal Article] Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface2023
- Author(s)
  Sometani Mitsuru、Nishiya Yusuke、Kondo Ren、Inohana Rei、Zeng Hongyu、Hirai Hirohisa、Okamoto Dai、Matsushita Yu-ichiro、Umeda Takahide
- Journal Title
  
  APL Materials
  
  Volume: 11 Issue: 11 Pages: 111119-111124
- DOI
  10.1063/5.0171143
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00340, KAKENHI-PROJECT-21H04553
[Journal Article] Negatively charged boron vacancy center in diamond2022
- Author(s)
  T. Umeda, K. Watanabe, H. Hara, H. Sumiya, S. Onoda, A. Uedono, I. Chuprina, P. Siyushev, F. Jelezko, J. Wrachtrup, J. Isoya
- Journal Title
  
  Physical Review B
  
  Volume: 105 Issue: 16
- DOI
  10.1103/physrevb.105.165201
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00340
[Journal Article] Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs2022
- Author(s)
  Y. Abe, A. Chaen, M. Sometani, S. Harada, Y. Yamazaki, T. Ohshima, T. Umeda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 120 Issue: 6 Pages: 064001-064001
- DOI
  10.1063/5.0078189
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00340, KAKENHI-PROJECT-20J15088
[Journal Article] Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000 )/ SiO2 interfaces with wet oxidation2020
- Author(s)
  T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, S. Harada, T. Hatakeyama
- Journal Title
  
  Applied Physics Letters
  
  Volume: 115 Issue: 15 Pages: 151602-151602
- DOI
  10.1063/1.5116170
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface2020
- Author(s)
  Umeda T.、Kobayashi T.、Sometani M.、Yano H.、Matsushita Y.、Harada S.
- Journal Title
  
  Applied Physics Letters
  
  Volume: 116 Issue: 7 Pages: 071604-071604
- DOI
  10.1063/1.5143555
- NAID
  120007003559
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-17H02781
[Journal Article] Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4HSiC(0001)/SiO2 interfaces2020
- Author(s)
  T. Umeda, Y. Nakano, E. Higa, T. Okuda, T. Kimoto, T. Hosoi, H. Watanabe, M. Sometani, S. Harada
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 127 Issue: 14 Pages: 145301-145301
- DOI
  10.1063/1.5134648
- NAID
  120007132646
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Nearly degenerate ground state of phosphorus donor in diamond2020
- Author(s)
  C. Shinei , H. Kato, H. Watanabe, T. Makino, S. Yamasaki, S. Koizumi, T. Umeda
- Journal Title
  
  Physical Review Materials
  
  Volume: 4 Issue: 2
- DOI
  10.1103/physrevmaterials.4.024603
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00340
[Journal Article] Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face 4H-SiC/SiO2 interfaces2020
- Author(s)
  E. Higa, M. Sometani, H. Hirai, H. Yano, S. Harada, T. Umeda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 116 Issue: 17 Pages: 171602-171602
- DOI
  10.1063/5.0002944
- NAID
  120007132633
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Anomalous carbon clusters in 4H-SiC/SiO2 interfaces2019
- Author(s)
  Y. Kagoyama, M. Okamoto, T. Yamasaki, N. Tajima, J. Nara, T. Ohno, H. Yano, S. Harada, and T. Umeda
- Journal Title
  
  J. Applied Physics
  
  Volume: 125 Issue: 6 Pages: 065302-065302
- DOI
  10.1063/1.5066356
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03830, KAKENHI-PROJECT-17H02781
[Journal Article] Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties2019
- Author(s)
  S.-i. Sato, T. Narahara, Y. Abe, Y. Hijikata, T. Umeda, T. Ohshima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Issue: 8 Pages: 083105-083105
- DOI
  10.1063/1.5099327
- NAID
  120007132685
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs2018
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, S. Onoda, M. Haruyama, W. Kada, O. Hanaizumi, R. Kosugi, S. Harada, T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 924 Pages: 281-284
- DOI
  10.4028/www.scientific.net/msf.924.281
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin-resonance spectroscopy2018
- Author(s)
  T. Umeda, G.-W. Kim, T. Okuda, M. Sometani, T. Kimoto, S. Harada
- Journal Title
  
  Applied Physics Letters
  
  Volume: 113 Issue: 6 Pages: 061605-061605
- DOI
  10.1063/1.5041059
- NAID
  120007127942
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors2018
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 112 Issue: 3
- DOI
  10.1063/1.4994241
- NAID
  120007133812
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-17H02781
[Journal Article] Interface defects in C-face 4H-SiC MOSFETs: An electrically-detected-magnetic-resonance study2017
- Author(s)
  T. Umeda, M. Okamoto, H. Yoshioka, G.-W. Kim, S. Ma, R. Arai, T. Makino, T. Ohshima, S. Harada
- Journal Title
  
  ECS Transactions
  
  Volume: 80 Issue: 1 Pages: 147-153
- DOI
  10.1149/08001.0147ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H02781
[Journal Article] A silicon Carbide Room-Temperature Single-Photon Source2014
- Author(s)
  S. Castelletto, B. C. Johnson, V. Ivády, N. Stavrias, T. Umeda, A. Gali, T. Ohshima
- Journal Title
  
  Nature Materials
  
  Volume: 13 Issue: 2 Pages: 151-156
- DOI
  10.1038/nmat3806
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656025
[Journal Article] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance2014
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 414-417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] SiC MOS interface states: difference between Si face and C face2013
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Pages: 55-60
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] 4H-SiC MOS界面の電子スピン共鳴分光評価2013
- Author(s)
  梅田享英, 岡本光央, 小杉亮治, 原田信介, 荒井亮, 佐藤嘉洋, 牧野高紘, 大島武, 奥村元
- Journal Title
  
  シリコンテクノロジー（応用物理学会分科会）
  
  Volume: 161 Pages: 98-102
- Data Source
  KAKENHI-PROJECT-25286054
[Journal Article] Fabrication of Single Photon Centres in Silicon Carbide2012
- Author(s)
  B. C. Johnson, S. Castelletto, T. Ohshima. T. Umeda
- Journal Title
  
  IEEE conference publication, Proceedings of 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
  
  Volume: 1 Pages: 217-218
- DOI
  10.1109/commad.2012.6472328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10F00802, KAKENHI-PROJECT-24656025
[Journal Article] 先端DRAMにおけるデータ保持時間の変動現象のメカニズム〜単一点欠陥が引き起こすデバイス劣化現象2007
- Author(s)
  梅田享英
- Journal Title
  
  応用物理 76
  
  Pages: 1037-1040
- NAID
  10019855429
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18760229
[Journal Article] Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories2006
- Author(s)
  T.Umeda
- Journal Title
  
  Applied Physics Letters 88
  
  Pages: 253504-253504
- NAID
  120007131777
- Data Source
  KAKENHI-PROJECT-18760229
[Presentation] 4H-SiC(11-20)面（a面） MOS界面欠陥の電子スピン共鳴分光（ESR/EDMR）評価2023
- Author(s)
  近藤蓮、染谷満、渡部平司、梅田享英
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00340
[Presentation] Carbon dangling-bond energy levels at 4H-SiC(0001)/SiO2 interface determined by EDMR, C-V and first-principles calculation2023
- Author(s)
  M. Sometani, Y. Nishiya, R. Kondo, R. Inohana, H. Zeng, H. Hirai, D. Okamoto, Y. Matsushita,T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00340
[Presentation] Comparison of polar-face and non-polar faces 4H-SiC/SiO2 interfaces revealed by magnetic resonance and related techniques2023
- Author(s)
  R. Kondo, H. Zeng, M. Sometani, H. Hirai, H. Watanabe, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00340
[Presentation] a面4H-SiC MOS界面の室温～低温ESR/EDMR評価2023
- Author(s)
  近藤蓮、曽弘宇、染谷満、平井悠久、渡部平司、梅田享英
- Organizer
  先進パワー半導体分科会第１０回講演会
- Data Source
  KAKENHI-PROJECT-20H00340
[Presentation] SiC 中点欠陥およびMOS 界面欠陥とデバイスへの影響2022
- Author(s)
  梅田享英
- Organizer
  ワイドギャップ半導体学会第９回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00340
[Presentation] EDMRとCV測定の組み合わせによるSiO2/SiC界面欠陥のエネルギーレベルの推定2022
- Author(s)
  染谷満、西谷侑将、近藤蓮、猪鼻伶、曾弘宇、平井悠久、岡本大、松下雄一郎、梅田享英
- Organizer
  先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-20H00340
[Presentation] Electrical detection of Tv2a-type VSi centres in SiC-MOSFET2021
- Author(s)
  Y. Abe, A. Chaen, M. Sometani, S. Harada, Y. Yamazaki, T. Ohshima, T. Umeda
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00340
[Presentation] C面窒化4H-SiC/SiO2界面の電流検出型電子スピン共鳴分光2019
- Author(s)
  成ケ澤雅人，比嘉栄斗，染谷満，畠山哲夫，原田信介，梅田享英
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] The PbC (carbon dangling bond) center at 4H-SiC(0001)/SiO2 interface: An EDMR study2019
- Author(s)
  T. Umeda, T. Kobayashi, Y. Matsushita, E. Higa, H. Yano, M. Sometani, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 電流検出電子スピン共鳴分光（EDMR）2019
- Author(s)
  梅田享英
- Organizer
  学振145委員会「結晶加工と評価技術」第162回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Carbon Pb center (the PbC center) at 4H-SiC(0001)/SiO2 interface2019
- Author(s)
  T. Umeda, Y. Nakano, E. Higa, H. Yano, M. Sometani, S. Harada
- Organizer
  30th International Conference on Defects in Semiconductors (ICDS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC Si面・a面・m面界面欠陥の電流検出型電子スピン共鳴分光法による評価2019
- Author(s)
  比嘉栄斗，染谷満，原田信介，矢野裕司，梅田享英
- Organizer
  第6回先進パワー半導体分科会講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC MOSFETチャネルの単一光子源のゲート電圧制御22019
- Author(s)
  阿部裕太，梅田享英，岡本光央，原田信介，佐藤真一郎，山﨑雄一，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] The PbC (carbon dangling bond) center at 4H-SiC(0001)/SiO2 interface: A first-principles study2019
- Author(s)
  T. Kobayashi, T. Umeda, Y. Matsushita
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] The effect of γ-ray irradiation on optical properties of single photon sources in 4H- SiC MOSFET2019
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, S. Harada, Y. Yamazaki, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Creation of nitrogen-vacancy centers in SiC by ion irradiation2019
- Author(s)
  T. Ohshima, S.-i. Sato, T. Narahara, Y. Yamazaki, Y. Abe, T. Umeda, Y. Hijikata
- Organizer
  30th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Identifications of major and minor interface defects at C-face 4H-SiC/SiO2 interfaces with wet oxidation2019
- Author(s)
  T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, T. Hatakeyama, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Electrically-detected-magnetic-resonance study on interface defects at a-face and m-face 4H-SiC/SiO2 interfaces2019
- Author(s)
  E. Higa, M. Sometani, S. Harada, H. Yano, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] C面４H-SiCウェット酸化の特殊性と界面欠陥：EDMR分光からの知見2019
- Author(s)
  梅田享英，鹿児山陽平，富田和輝，阿部裕太，岡本光央，畠山哲夫，原田信介
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC(0001)/SiO2界面の炭素ダングリングボンド欠陥（PbCセンター）2018
- Author(s)
  梅田享英、神成田亘平、奥田貴史、木本暢恒、染谷満、原田信介
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 15NOポストアニール後の4H-SiC MOS界面の窒素ドーピングのESR定量2018
- Author(s)
  梅田享英，染谷満，原田信介
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] SiC-MOS界面欠陥の起源：電子スピン共鳴分光の最新の結果より2018
- Author(s)
  梅田享英
- Organizer
  先進パワー半導体分科会第5回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Electron-spin-resonance characterization on interface carbon defects at 4H-SiC/SiO2 interfaces formed by ultrahigh-temperature oxidation2018
- Author(s)
  T. Umeda, T. Hosoi, T. Okuda, T. Kimoto, M. Sometani, S. Harada, H. Watanabe
- Organizer
  European Conference on Silicon Carbide and Related Materials 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 電流検出型電子スピン共鳴による(000-1)4H-SiC/SiO2界面炭素ダングリングボンドの検出2018
- Author(s)
  鹿児山陽平、梅田享英、染谷満、原田信介、畠山哲夫
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] a面およびm面4H-SiC MOSFETにおける単一光子源の探索2018
- Author(s)
  阿部裕太，梅田享英，原田信介，佐藤真一郎，山﨑雄一，大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Near Infrared Photoluminescence from Nitrogen-Vacancy Centers in Silicon Carbide2018
- Author(s)
  S.-I. Sato, Y. Abe, T. Umeda, T. Ohshima
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Oxidation-process dependence of single photon sources embedded in 4H-SiC MOSFETs2017
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] Interface carbon defect at Si-face 4H-SiC/SiO2 interfaces detected by electron spin resonance2017
- Author(s)
  G.-W. Kim, T. Okuda, T. Kimoto, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC MOSFETチャネルの単一光子源の偏光角度依存性2017
- Author(s)
  阿部裕太、岡本光央、小野田忍、大島武、春山盛善、加田渉、花泉修、小杉亮治、原田信介、梅田享英
- Organizer
  2017年　第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Oxidation-process dependence of Single photon sources embedded in 4H-SiC MOSFETs2017
- Author(s)
  Y. Abe, M. Okamoto, S. Onoda, T. Ohshima, M. Haruyama, W. Kada, O. Hanaizumi, R. Kosugi, S. Harada, Y. Kagoyama, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC MOSFETチャネルの単一光子源のゲート電圧制御2017
- Author(s)
  梅田亨英, 阿部裕太, 岡本光央, 原田信介, 春山盛善, 加田渉, 花泉修, 小野田忍, 大島武
- Organizer
  2017年第78回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Interface defects related to threshold-voltage shift in C-face 4H-SiC MOSFETs: An EDMR study2017
- Author(s)
  T. Umeda, M. Okamoto, H. Yoshioka, G.-W. Kim, S. Ma, R. Arai, T. Makino, T. Ohshima, S. Harada
- Organizer
  232nd Electrochemical Society Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H02781
[Presentation] 4H-SiC MOSFETチャネル中の単一光子源に対する水素の影響2017
- Author(s)
  阿部裕太, 岡本光央, 小野田忍, 大島武, 春山盛善, 加田渉, 花泉修, 原田信介, 鹿児山陽平, 梅田亨英
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016
- Author(s)
  梅田享英、阿部裕太、Y.-W. Zhu、岡本光央、小杉亮治、原田信介、春山盛善、小野田忍、大島武
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC MOSFETにおける単一発光欠陥の界面酸化プロセス依存性の共焦点顕微鏡評価2016
- Author(s)
  阿部裕太、梅田享英、岡本光央、小杉亮治、原田信介、波多野睦子、岩崎孝之、小野田忍、大島武、春山盛善、加田渉、花泉修
- Organizer
  2016年　第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016
- Author(s)
  梅田享英，阿部裕太，Y.-W. Zhu，岡本光央，小杉亮治，原田信介，春山盛善，牧野高紘，小野田忍，大島武
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] エピタキシャル基板を使用した4H-SiC MOS窒化界面のESR評価2016
- Author(s)
  梅田享英、鹿児山陽平、奥田貴史、須田淳、木本暢恒、小杉亮治、岡本光央、原田信介
- Organizer
  第63回応用物理学学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC MOSFETにおける単一発光欠陥の酸化膜界面依存性の共焦点顕微鏡評価2016
- Author(s)
  阿部裕太、岡本光央、小杉亮治、原田信介、波多野睦子、岩崎孝之、小野田忍、春山盛善、加田渉、花泉修、大島武、梅田享英
- Organizer
  応用物理学会先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場、茨城県つくば市
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Microscopic difference between dry and wet oxidations of C-face 4H-SiC MOSFFETs studied by electrically detected magnetic resonance2015
- Author(s)
  Y. Kagoyama, M. Okamoto, S. Harada, R. Arai, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Electrically Detected Magnetic Resonance Study on Interface Defects Responsible forThreshold‐Voltage Shift in C‐face 4H‐SiC MOSFETs2015
- Author(s)
  T. Umeda, R. Arai, S.J. Ma, G.W. Kim, M. Okamoto, H. Yoshioka, S. Harada, T. Makino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC2015
- Author(s)
  K. Murakami, S. Tanai, T. Okuda, J. Suda, T. Kimoto, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] An interfacial defect complex (the P8/9 centers) in C-face 4H-SiC MOSFET studied by electrically detected magnetic resonance2015
- Author(s)
  T. Umeda, R. Arai, M. Okamoto, R. Kosugi, S. Harada
- Organizer
  International Conference on Silicon Carbide and Related Materials 2016
- Place of Presentation
  Sicily, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] ESR study on Hydrogen Passivation of Intrinsic Defects in P-type and Semi-insulating 4H-SiC2015
- Author(s)
  K. Murakami, S. Tanai, T. Okuda, J. Suda, T. Kimoto, and T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials 2015
- Place of Presentation
  Giardini Naxos (Sicily, Italy)
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 4H‐SiC中の点欠陥はどこまで分かっているか？：バルク結晶とMOS界面2014
- Author(s)
  梅田享英
- Organizer
  第2回筑波大学パワーエレクトロニクス未来技術研究会
- Place of Presentation
  筑波大学東京キャンパス
- Year and Date
  2014-12-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Fabrication of Single Photon Centres in Silicon Carbide2012
- Author(s)
  B. C. Johnson, S. Castelletto, T. Ohshima and T. Umeda
- Organizer
  2012 Conference on Optoelectronic and Microelectronic Materials and Devices
- Place of Presentation
  Univ. of Melbourne (Melbourne, Australia)
- Data Source
  KAKENHI-PROJECT-24656025
[Presentation] Fabrication of Single Photon Centres in Silicon Carbide2012
- Author(s)
  B. C. Johnson, S. Castelletto, T. Ohshima and T. Umeda
- Organizer
  2012 Conference on Optoelectronic and Microelectronic Materials and Devices
- Place of Presentation
  University of Melbourne (Melbourne, Australia)
- Data Source
  KAKENHI-PROJECT-24656025
[Presentation] フッ素注入による欠陥制御を行ったDRAMセルの電子スピン共鳴分光評価2007
- Author(s)
  大崎純一・梅田享英・小此木堅祐・大湯静憲
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-18760229
[Presentation] シリコンカーバイド（4H-SiC）中の格子欠陥の評価：電子スピン共鳴（ESR）法と、第一原理計算の対応
- Author(s)
  梅田享英
- Organizer
  第24回格子欠陥フォーラム
- Place of Presentation
  かんぽの宿恵那（恵那市）
- Year and Date
  2014-09-11 – 2014-09-12
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance
- Author(s)
  T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2013
- Place of Presentation
  Miyazaki, Japan
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Electrically Detected Magnetic Resonance (EDMR) Study on Interface Defects in C-face 4H-SiC Metal-Oxide-Semi-conductor Field Effect Transistors
- Author(s)
  G.W. Kim, S.J. Ma, R. Arai, M. Okamoto, S. Harada, T. Makino, T. Ohshima, T. Umeda
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC MOS界面窒化処理における窒素ドーピングのESR定量
- Author(s)
  梅田享英、佐藤嘉洋、佐久間由貴、小杉亮治
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] SiC MOS interface states: difference between Si face and C face
- Author(s)
  T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
- Organizer
  224th Electrochemical Society Meeting
- Place of Presentation
  The Hilton San Francisco Hotel, San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 電流検出ESRによる C面4H-SiC MOSFET界面欠陥からの水素脱離の観察
- Author(s)
  荒井亮、梅田享英、佐藤嘉洋、岡本光央、原田信介、小杉亮治、奥村元、牧野高紘、大島武
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学、京都府
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Nitrogen doping to channel regions of 4H-SiC MOSFETs characterized by electron spin resonance
- Author(s)
  T. Umeda, Y. Sato, R. Kosugi, M. Okamoto), S. Harada, H. Okumura
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] 4H-SiC中の空孔欠陥と水素の反応と、水素複合欠陥のESR評価
- Author(s)
  棚井創基、村上功樹、奥田貴史、須田淳、木本恒暢、小杉亮治、大島武、梅田享英
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] SiC中の単一発光源となる欠陥の探索
- Author(s)
  大島武，小野田忍，牧野高紘，岩本直也，B. C. Johnson，A. Lohrmann，T. Karle，J. C. McCallum，S. Castelletto，梅田享英，佐藤嘉洋，朱煜偉，V. Ivády，A. Gali，春山盛善，加田渉，花泉修
- Organizer
  2014年　第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道・札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 容量検出型電子スピン共鳴分光法による4H-SiC MOSFETの結晶欠陥の測定
- Author(s)
  鹿児山陽平、岡本光央、小杉亮治、原田信介、牧野高紘、大島武、梅田享英
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-15
- Data Source
  KAKENHI-PROJECT-25286054
[Presentation] Defects in 4H-SiC MOSFETs studied by Capacitively Detected Magnetic Resonance
- Author(s)
  Y. Kagoyama, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, T. Makino, T. Ohshima
- Organizer
  European Conference on Silicon Carbide and Related Materials (ECSCRM) 2014
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-25286054

1. OHSHIMA Takeshi (50354949)

# of Collaborated Projects: 5 results

# of Collaborated Products: 19 results
2. HARADA Shinsuke (20392649)

# of Collaborated Projects: 3 results

# of Collaborated Products: 35 results
3. OKAMOTO Mitsuo (60450665)

# of Collaborated Projects: 2 results

# of Collaborated Products: 21 results
4. Matsushita Yu-ichiro (90762336)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
5. 磯谷順一 (60011756)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
6. 土方泰斗 (70322021)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
7. KOSUGI Ryouji (10356991)

# of Collaborated Projects: 1 results

# of Collaborated Products: 14 results
8. ONODA Shinobu (30414569)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
9. 水落憲和 (00323311)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 波多野睦子 (00417007)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 牧野俊晴 (20360258)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
12. 五十嵐信行 (40771100)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 染谷満 (60783644)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
14. 吉岡裕典 (60712528)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 押山淳 (80143361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. ONO Takahisa

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
17. JOHNSON Brett

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results

Fujinoki Takahide 藤ノ木 享英 (梅田 享英)

梅田享英

藤ノ木 享英(梅田享英) フジノキ タカヒデ

藤ノ木 享英 フジノキ タカヒデ

UMEDA Takehide 梅田 享英

梅田 享英 ウメダ タカヒデ

Research Projects

Research Products

Co-Researchers

Elucidation of SiC-MOS interfaces by developing electronic structure calculation methods

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

ワイドギャップ半導体MOS界面欠陥の正体の横断的解明Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Quantum state measurements of single photon sources in silicon carbide devices

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Electron-spin-resonance characterization on interface defects at wide-gap semiconductor (SiC and GaN) MOS interfacesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Control of Photons and Spins of High-Brightness Single Photon Center in Silicon Carbide

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Electron-spin-resonance study on SiC-MOSFETs and their MOS interface defects related to channel-mobility degradationPrincipal Investigator

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Controlling of Single Photon Source in Silicon Carbide

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電流検出電子スピン共鳴法によるシリコン微細デバイスの2値現象の観察Principal Investigator

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半導体電子スピン系量子コンピュータの要素技術の開発

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微細電子デバイス中の点欠陥に対する超高感度電子スピン共鳴スペクトロスコピーの研究Principal Investigator

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[Journal Article] 電流検出ESRによるSiC中の欠陥検出のための＋αの研究技術2023

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[Journal Article] Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC(0001)/SiO2 interface2023

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[Journal Article] Negatively charged boron vacancy center in diamond2022

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Fujinoki Takahide 藤ノ木享英 (梅田享英)

藤ノ木享英(梅田享英) フジノキタカヒデ

藤ノ木享英フジノキタカヒデ

UMEDA Takehide 梅田享英

梅田享英ウメダタカヒデ