Tanaka Yasunori 田中保宣

… Alternative Names

田中保宣タナカヤスノリ

TANAKA Yasunori 田中保宣

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Researcher Number	20357453
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究センター長
Affiliation (based on the past Project Information) *help	2024: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究センター長 2020 – 2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 副研究センター長 2017: 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 総括研究主幹 2014: 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 2011: 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 2008: 産業技術総合研究所, エネルギー半導体エレクトロニクス研究ラボ, 主任研究員 2006 – 2007: 産業技術総合研究所, パワーエレクトロニクス研究センター, 主任研究員
Review Section/Research Field	Except Principal Investigator Power engineering/Power conversion/Electric machinery / Broad Section C / Medium-sized Section 21:Electrical and electronic engineering and related fields / 電力工学・電気機器工学
Keywords	Except Principal Investigator SiC / ワイドバンドギャップ / パワーデバイス / 耐放射線 / CMOS集積回路 / ワイドバンドギャップ半導体 / パワーエレクトロニクス / 静電誘導トランジスタ / 高温 / 高温動作集積回路 … More / 耐放射線集積回路 / 電子デバイス / 耐放射線デバイス / 高温動作 / シリコンカーバイド半導体 / 極限環境エレクトロニクス / 高速半導体スイッチ / パルスパワー / 電力工学 / 炭化硅素 / 省エネルギー / 炭化珪素 / シリコンカーバイド Less

Research on SiC Extreme-Envionment Electronics for Exploring Human's New Frontiers
- Principal Investigator
  
  黒木伸一郎
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Hiroshima University
Research on Silicon-Carbide IoT Platform for Harsh Environment Applications
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Hiroshima University
Pulse power application of SiC power devices with ultra-low loss and high switching speed
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
A new opwerating mode of SiC-buried gate static induction transistor with untra-low on-resistance
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
Improvement in th e reli ability of super low power loss SiC static induction devices
- Principal Investigator
  
  YAN0 Koji
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  University of Yamanashi
Research on the maximum performance of silicon carbide static induction devices
- Principal Investigator
  
  YANO Koji
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電力工学・電気機器工学
- Research Institution
  University of Yamanashi

All 2023 2022 2021 2020 2017 2014 2013 2012 2011 2009 2008 2007 Other

All Journal Article Presentation

[Journal Article] Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor2023
- Author(s)
  Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 1 Pages: 100-103
- DOI
  10.1109/led.2022.3226494
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors2022
- Author(s)
  Akinori Takeyama, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki, and Takeshi Ohshima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 24 Pages: 244503-244503
- DOI
  10.1063/5.0095841
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors2022
- Author(s)
  Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 10 Pages: 1713-1716
- DOI
  10.1109/led.2022.3200124
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)2014
- Author(s)
  A. Takatsuka,Y.Tanaka,K.Yano,N.Matsumoto,T.Yatsuo,and K.Arai
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 899-902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560327
[Journal Article] 1270V, 1.21mΩcm2 SiC buried gate static induction transistors (SiC-BGSITs)2009
- Author(s)
  Y. Tanaka, K. Yano, M. Okamoto, A. Tanaka, K. Arai, T. Yatsuo
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1071-1074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors (BG-SITs)2009
- Author(s)
  K.Yano, Y.Tanaka, T.Yatsuo,A.Takatsuka, M.Okamoto, and K. Arai
- Journal Title
  
  Materials Science Forum
  
  Pages: 1075-1078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of furnoff operation of SiC buried gate static induction transistors (BG-SITs)2009
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto, K. Arai
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1075-1078
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] 1270V, 1.21mΩ cm^2 SiC buried gate static induction transistors (SiC-BGSITs)2009
- Author(s)
  Y.Tanaka, K.Yano, M.Okamoto, A.Tanaka, K.Arai, and T.Yatsuo
- Journal Title
  
  Materials Science Forum
  
  Pages: 1071-1074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] 1270V, 1.21mΩcm2 SiC Buried gate static induction transistors(SiC-BGSITs)2007
- Author(s)
  Y. Tanaka, K. Yano, M. Okamoto, A. Takatsuka, K. Arai, T. Yatsuo
- Journal Title
  
  Tech. Dig., Int. Conf. Silicon Carbide and Related Materials 2007
  
  Pages: 227-228
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors(BG-SITs)2007
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, M. Okamoto, K. Fukuda, K. Arai
- Journal Title
  
  Tech. Dig., Int. Conf. Silicon Carbide and Related Materials 2007
  
  Pages: 170-171
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] Bipolar Characteristics of Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits2022
- Author(s)
  Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC半導体による極限環境エレクトロニクス構築2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  2022年電子情報通信学会総合大会シンポジウム「極限環境で動作する集積回路」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS UVイメージセンサ画素デバイスの200℃高温動作2022
- Author(s)
  堤将之, 目黒達也, 武山昭憲, 大島武, 田中保宣, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors2022
- Author(s)
  Kenta Nishigaito, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS UVイメージセンサ画素デバイスの200℃高温動作2022
- Author(s)
  堤将之、目黒達也、武山昭憲、大島武、田中保宣、黒木伸一郎
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド極限環境用集積回路および画素デバイスの研究2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  電気学会電子デバイス研究会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用（第2期）」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 高線量ガンマ線照射した 4H-SiC JFET のしきい値電圧安定性2022
- Author(s)
  武山昭憲, 牧野高紘, 田中保宣, 黒木伸一郎, 大島武
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC 半絶縁基板を用いた Well-less MOSFET の p/n channel 動作2022
- Author(s)
  甲斐陶弥、児島一聡、大島武、田中保宣、黒木伸一郎
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Output Characteristics of SOI-Si/4H-SiC Hybrid Pixel Device for Radiation Hardend CMOS Image Sensors2022
- Author(s)
  Tatsuya Meguro, Fumiaki Hasebe, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Operating Characteristics of 4H-SiC 3T/4T- Active Pixel Sensors2022
- Author(s)
  Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohsima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS SRAM のノイズマージン評価2022
- Author(s)
  甲斐陶弥, 児島一聡, 大島武, 田中保宣, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Coverage Enhancement of Si-SOI/4H-SiC Wafer Direct Bonding by SiO2 insertion2022
- Author(s)
  Kazuya Kawamura, Tatsuya Meguro, Masayuki Tsutsumi, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Noise Margins and BTI Characteristics of 4H-SiC CMOS Circuits in High-Temperature Environment2022
- Author(s)
  Takuma Shima, Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也, 西垣内健汰, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 19 回研究会　「ワイドバンドギャップ半導体を用いた極限環境エレクトロニクス」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] エピタキシャル成長による n/p ウェル構造を用いた 4H-SiC CMOS インバータの特性評価2021
- Author(s)
  志摩拓真, 甲斐陶弥, 児島一聡, 田中保宣, 大島武, 黒木伸一郎
- Organizer
  応用物理学会・先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 耐放射線性炭化ケイ素半導体デバイスの開発2021
- Author(s)
  大島武, 武山昭憲、牧野高紘、黒木伸一郎、田中保宣
- Organizer
  2021年第82回応用物理学会秋季学術講演会シンポジウム「福島第1原発廃炉と福島復興　－応用物理学会の会員として，私たちに何ができるか－」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] エピタキシャル成長による4H-SiC CMOS Well形成2021
- Author(s)
  甲斐　陶弥 , 児島一聡, 志摩　拓真, 大島武, 田中保宣, 黒木　伸一郎
- Organizer
  応用物理学会・先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也，西垣内健汰，武山昭憲，牧野高紘，大島武，田中保宣
- Organizer
  応用物理学会・先進パワー半導体分科会第19回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド（SiC）極限環境エレクトロニクスの研究開発：原子炉廃炉対応から医療応用まで2021
- Author(s)
  黒木伸一郎, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  文部科学省共同利用・共同研究拠点生体医歯工学共同研究拠点　令和2年度成果報告会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響2020
- Author(s)
  武山昭憲，清水奎吾, 牧野高紘, 山崎雄一, 大島武, 黒木伸一郎, 田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 耐放射線イメージセンサに向けたSOI-Si/4H-SiC画素プロセス2020
- Author(s)
  目黒達也，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] A novel gate drive circuit for high speed turn-on switching of ultra-low feedback capacitance SiC-VJFET2017
- Author(s)
  N. Kikuchi, T. Ishikawa, Y. Tanaka, K. Yano
- Organizer
  Proceedings of International conference on Eeectrical machines and systems (ICEMS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13927
[Presentation] SiC埋め込みゲート型SITにおけるオン抵抗の温度特性2014
- Author(s)
  望月雄貴、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち、名古屋市
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] 3kVノーマリーオフ型SiC-BGSITの設計2014
- Author(s)
  飯塚大臣、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち、名古屋市
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] ゲートオーバードライブによるノーマリーオフ型SiC-BGSITのターンオン性能の改善2013
- Author(s)
  勝俣公貴、田中保宣、八尾勉、高塚章夫、山本真幸、矢野浩司
- Organizer
  SiC及び関連半導体研究台22回講演会
- Place of Presentation
  埼玉会館
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] ゲートオーバードライブによるノーマリーオフSiC埋め込みゲートSITのスイッチング特性改善2012
- Author(s)
  中嶋　竜基、矢野　浩司、田中　保宣、八尾　勉、高塚　章夫
- Organizer
  SIC及び関連ワイドギャップ半導体研究会第２１回講演会
- Place of Presentation
  大阪市中央公会堂（大阪府）
- Data Source
  KAKENHI-PROJECT-24560327
[Presentation] SiC-静電誘導トランジスタの高温逆バイアス試験2011
- Author(s)
  矢野浩司・田中保宣・八尾勉・高塚章夫
- Organizer
  平成23年電気学会全国大会
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-21560294
[Presentation] SiC-静電誘導トランジスタの高温逆バイアス試験2011
- Author(s)
  矢野浩司・田中保宣・八尾勉・高塚章夫
- Organizer
  平成23年電気学会全国大会(本大会は東日本震災のため中止になりましたが、予稿集は震災前に公表されています)
- Place of Presentation
  大阪大学
- Year and Date
  2011-03-01
- Data Source
  KAKENHI-PROJECT-21560294
[Presentation] Application of SiC-BGSITs for DC-DC converters2008
- Author(s)
  Y. Tanaka, K. Yano, A. Takatsuka, K. Arai, T. Yatsuo
- Organizer
  European Silicon Carbide and Related Matterials
- Place of Presentation
  バルセロナ
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] AraiShort circuit operation of SiC buried gate static induction transistors (SiC BGSITs)2008
- Author(s)
  K.Yano, Y.Tanaka, T.Yatsuo,A.Takatsuka, and K.
- Organizer
  European Silicon Carbide and Related Matterials
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] Short circuit operation of SiC buried gate static induction transistors (SiC BGSITs)2008
- Author(s)
  K. Yano, Y. Tanaka, T. Yatsuo, A. Takatsuka, K. Arai
- Organizer
  European Silicon Carbide and Related Matterials
- Place of Presentation
  バルセロナ
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] Application of SiC-BGSITs for DC-DC converters, European Silicon Carbide and Related Matterials2008
- Author(s)
  Y.Tanaka, K.Yano, A.Takatsuka, K.Arai, and T.Yatsuo
- Organizer
  Barcelona
- Year and Date
  2008-09-10
- Data Source
  KAKENHI-PROJECT-18560274
[Presentation] 3.3 kV SiC Buried Gate Static Induction Transistors (SiC-BGSITs) With Ultra Low Specific On-Resistance
- Author(s)
  Yasunori TANAKA , Akio TAKATSUKA, Koji YANO, Norio MATSUMOTO, Tsutomu YATSUO
- Organizer
  European Conference Silicon Carbide & Related Materials
- Place of Presentation
  Grenoble,France
- Year and Date
  2014-09-21 – 2014-09-25
- Data Source
  KAKENHI-PROJECT-24560327

1. YATSUO Tsutomu (10399503)

# of Collaborated Projects: 5 results

# of Collaborated Products: 18 results
2. YANO Koji (90252014)

# of Collaborated Projects: 4 results

# of Collaborated Products: 19 results
3. YAMAMOTO Masayuki (00511320)

# of Collaborated Projects: 2 results

# of Collaborated Products: 3 results
4. Kuroki Shin-Ichiro (70400281)

# of Collaborated Projects: 2 results

# of Collaborated Products: 24 results
5. 児島一聡 (40371041)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
6. 大島武 (50354949)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
7. 武山昭憲 (50370424)

# of Collaborated Projects: 2 results

# of Collaborated Products: 17 results
8. 牧野高紘 (80549668)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results

Tanaka Yasunori 田中 保宣

田中 保宣 タナカ ヤスノリ

TANAKA Yasunori 田中 保宣

Research Projects

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Research on SiC Extreme-Envionment Electronics for Exploring Human's New Frontiers

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Research on Silicon-Carbide IoT Platform for Harsh Environment Applications

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Pulse power application of SiC power devices with ultra-low loss and high switching speed

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A new opwerating mode of SiC-buried gate static induction transistor with untra-low on-resistance

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Improvement in th e reli ability of super low power loss SiC static induction devices

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Research on the maximum performance of silicon carbide static induction devices

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[Journal Article] Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor2023

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[Journal Article] Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors2022

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[Journal Article] Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors2022

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[Journal Article] 3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)2014

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[Journal Article] 1270V, 1.21mΩcm2 SiC buried gate static induction transistors (SiC-BGSITs)2009

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[Journal Article] Three dimensional analysis of turnoff operation of SiC buried gate static induction transistors (BG-SITs)2009

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[Journal Article] Three dimensional analysis of furnoff operation of SiC buried gate static induction transistors (BG-SITs)2009

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[Journal Article] 1270V, 1.21mΩ cm^2 SiC buried gate static induction transistors (SiC-BGSITs)2009

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[Journal Article] 1270V, 1.21mΩcm2 SiC Buried gate static induction transistors(SiC-BGSITs)2007

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Tanaka Yasunori 田中保宣

田中保宣タナカヤスノリ

TANAKA Yasunori 田中保宣

[Presentation] 4H-SiC CMOS UVイメージセンサ画素デバイスの200℃高温動作2022

[Presentation] 4H-SiC CMOS UVイメージセンサ画素デバイスの200℃高温動作2022