Oomi Syunichirou 大見俊一郎

… Alternative Names

Ohmi Shun-ichiro 大見俊一郎

OHMI Shunーichiro 大見俊一郎

OHMI Shun-ichiro 大見俊一郎

大見俊一郎オオミシユンイチロウ

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Researcher Number	30282859
Other IDs
Affiliation (Current)	2025: 東京科学大学, 工学院, 准教授
Affiliation (based on the past Project Information) *help	2019 – 2022: 東京工業大学, 工学院, 准教授 2016 – 2017: 東京工業大学, 工学院, 准教授 2015: 東京工業大学, 総合理工学研究科(研究院), 准教授 2007 – 2010: 東京工業大学, 大学院・総合理工学研究科, 准教授 2001 – 2005: 東京工業大学, 大学院・総合理工学研究科, 助教授 … More 1999 – 2000: Tokyo Institute of Technology, Precision and Intelligence Lab., ASSISTANT, 精密工学研究所, 助手 1997: 東京工業大学, 精密工学研究所, 助手 1997: 東工大, 精密工学研究所, 助手 Less
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Electron device/Electronic equipment / 電子デバイス・機器工学 Except Principal Investigator Electronic materials/Electric materials / Electron device/Electronic equipment / Thin film/Surface and interfacial physical properties / 電子デバイス・機器工学 / Science and Engineering
Keywords	Principal Investigator 不揮発性メモリ / RFマグネトロンスパッタ法 / ECRスパッタ法 / 強誘電体薄膜 / 高周波(RF)マグネトロンスパッタ法 / 電子サイクロトロン共鳴(ECR)スパッタ法 / Si表面原子レベル平坦化 / 不揮発性多値メモリ / 高周波（RF）マグネトロンスパッタ法 / 電子サイクロトロン共鳴（ECR）スパッタ法 … More / 高誘電率薄膜 / 強誘電体 / 電荷蓄積 / 分極 / ルブレン / ペンタセン / 窒素添加六ホウ化ランタン / トップゲート構造 / しきい値制御 / 疑似相補型トランジスタ / 集積化 / 微細化 / 低仕事関数金属 / 界面制御 / 相補型トランジスタ / 有機絶縁体 / 有機半導体 … More Except Principal Investigator MOSFET / SrBi_2Ta_2O_9 / ゲート絶縁膜 / ML-MOSFET / SBSI / TML-MOSFET / SiGe / La_2O_3 / HfO_2 / metalorganic chemical vapor deposition (MOCVD) / 強誘電体メモリ / YMnO_3 / SOI / 強誘電体 / 強誘電体ゲートトランジスタ / 不揮発性メモリ / HfNO / lateral selective etching of SiGe / hydoro-nitric acid / PtSi / HfON / i-SiGe横方向選択エッチング / フッ硝酸溶液 / HfNO薄膜 / SiGe横方向選択エッチング / フッ硝酸 / ML-MOFET / Dielectric constant / Maximum entropy concept / Rare oxide film / High dielectric constant film / gate insulators / Angle-resolved photoelectron spectroscopy / photoelectron spectroscopy / Synchrotron radiation / 硬X線 / シリコン界面 / 高エネルギー光電子分光法 / 希土類金属酸化膜 / 電子帯構造 / 誘電率 / 最大エントロピー法 / 希土類酸化膜 / 高誘電率膜 / 角度分解光電子分光法 / 光電子分光法 / 放射光 / molecular beam deposition (MBD) / gate insulator / high-dielectric-constant (high-K) material / SrZrO_3 / ZrO_2 / ゾルゲル法 / ランタニア / ハフニア / 分子線蒸着法 / 有機金属化学気相堆積法 / 高誘電率材料 / plasma-assisted MOCVD / ferroelectric memory / 酸素プラズマ / プラズマ / 有機金属気相成長法(MOCVD) / ferroelectric-gate transistor / neural network / non-volatile memory / ferroelectrics / ニューラルネット / Silicon / Memory / Ferroelectric / Si / PbZr_<1-x>Ti_xO_3 / MFSFET / シリコン / メモリ / C_60 / TrFE / PVDF / ペンタセン / PVDF/TrFE / フレキシブルメモリ / 有機半導体 / 有機強誘電体 / 集積回路 / 電子デバイス / 吸湿性 / 低温長時間アニール / Chemical Oxide / 極浅接合 / ガスドーピング / SiO_2換算膜厚 / リーク電流 / レーザーアニール / 拡散層 / プラズマドーピング / 高誘電率 / MBE / LSI / CMOS Less

The invention of hafnium-based multi-bit non-volatile memory utilizing polarization/charge trap smart functionsPrincipal Investigator
- Principal Investigator
  
  Ohmi Shun-ichiro
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
A study on integrated single organic semiconductor complementary transistors with top-gate structuresPrincipal Investigator
- Principal Investigator
  
  Ohmi Shun-ichiro
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
A study on low-power, high-density integrated circuits for flexible organic FeRAMs
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  2007 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon Interface
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Musashi Institute of Technology
A Study on Novel Multi-Layer Channel MOSFET/SOI with 10 nm Gate Length and Beyond
- Principal Investigator
  
  SAKAI Tetsushi
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
グローバル・デバイス・インテグレーション技術の創製
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Systematic survey and property control of high-dielectric-constant thin films for gate insulators of next generation MOSFETs
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY
  Tokyo Institute of Technology
Development of Low-Temperature MOCVD Technology for Ferroelectric Thin Films
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
高誘電体薄膜の超高清浄シリコン基板上への形成Principal Investigator
- Principal Investigator
  
  大見俊一郎
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
Study on Singl-Transistor-Cell-Type Ferroelectric Memory
- Principal Investigator
  
  ISHIWARA Hiroshi
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
Study on memory characteristics of non-volatile ferroelectric-gate transistors for neural network applications
- Principal Investigator
  
  TOKUMITSU Eisuke
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY

[Book] 2020版　薄膜作製応用ハンドブック, 第3章第1節 “誘電率・分極”2020
- Author(s)
  権田俊一監修，大見俊一郎, 工藤聡也（分担）
- Total Pages
  1468
- Publisher
  ㈱エヌ・ティー・エス
- ISBN
  9784860436315
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Kr-plasma sputtering for Pt gate electrode deposition on MFSFET with 5 nm-thick ferroelectric nondoped HfO2 gate insulator for analog memory application2023
- Author(s)
  Joong-Won Shin, Masakazu Tanuma, and Shun-ichiro Ohmi
- Journal Title
  
  IEICE Trans. Electron
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] 新材料による革新的強誘電体メモリの創製　ハフニウム系強誘電体が究極の半導体メモリを実現する2022
- Author(s)
  大見俊一郎
- Journal Title
  
  クリーンテクノロジー
  
  Volume: 第３２巻, 第８号 Pages: 45-50
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] 紙の基板を用いた有機強誘電体トランジスタの作製と有機太陽電池への応用2022
- Author(s)
  朴炳垠,大見俊一郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2022-60 Pages: 24-27
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] The Effect of Inter Layers on the Ferroelectric Undoped HfO2 Formation2022
- Author(s)
 Masakazu TANUMA, Joong-Won SHIN, and Shun-ichiro OHMI
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E105.C Issue: 10 Pages: 584-588
- DOI
 10.1587/transele.2021FUP0004
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2022-10-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19H00758
[Journal Article] 強誘電性ノンドープ HfO2薄膜を用いた MFSFET のしきい値電圧制御に関する検討2022
- Author(s)
  田沼将一,Joong-Won Shin, 大見俊一郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2022-63 Pages: 38-42
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer2022
- Author(s)
 Eun-Ki HONG, Kyung Eun PARK, and Shun-ichiro OHMI
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E105.C Issue: 10 Pages: 589-595
- DOI
 10.1587/transele.2021FUP0005
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2022-10-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19H00758
[Journal Article] Investigation of random telegraph noise characteristics of Hf-based MONOS nonvolatile memory devices with HfO2 and HfON tunneling layers2022
- Author(s)
  Jooyoung Pyo, Akio Ihara, and Shun-ichiro Ohmi,
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SC Pages: SC1066-SC1066
- DOI
  10.35848/1347-4065/ac4893
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] MFSFET with 5nm Thick Ferroelectric Nondoped HfO2 Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition2022
- Author(s)
 Joong-Won SHIN, Masakazu TANUMA, Nonmembers, and Shun-ichiro OHMI
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E105.C Issue: 10 Pages: 578-583
- DOI
 10.1587/transele.2021FUP0003
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2022-10-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19H00758
[Journal Article] Effects of sputtering power on the formation of 5 nm thick ferroelectric nondoped HfO2 gate insulator for MFSFET application2022
- Author(s)
  Joong-Won Shin, Masakazu Tanuma, and Shun-ichiro Ohmi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SH Pages: SH1010-SH1010
- DOI
  10.35848/1347-4065/ac6385
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] 表面熱析出法を用いた単原子層 h-BN 薄膜/LaB6ヘテロ構造の作製とその評価2022
- Author(s)
  長岡克己,相澤俊,大見俊一郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2022-57 Pages: 13-15
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO2 and HfON tunneling layer2022
- Author(s)
  Jooyoung Pyo, Akio Ihara, Wendi Zhang, Shuma Nishino, and Shun-ichiro Ohmi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SB Pages: SB1001-SB1001
- DOI
  10.35848/1347-4065/ac340c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Ultrathin Ferroelectric Nondoped HfO2 for MFSFET　with High-speed and Low-voltage Operation2022
- Author(s)
  J.W. Shin, M. Tanuma, J. Pyo, and S. Ohmi
- Journal Title
  
  80th Device Research Conference (DRC)
  
  Volume: - Pages: 73-74
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] A study on low-voltage operation of pentacene-based floating-gate memory utilizing Ar/N2-plasma nitridation with N-doped LaB6 metal and high-k LaBxNy insulator2022
- Author(s)
  Eun-Ki HONG, Shun-ichiro OHMI
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2022-61 Pages: 28-33
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] A study on threshold voltage control of MFSFET with ultrathin ferroelectric nondoped HfO2 gate insulator for analog memory applications2022
- Author(s)
  Joong-Won SHIN, Masakazu TANUMA and Shun-ichiro OHMI
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2022-56 Pages: 9-12
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] MFSFET with Ferroelectric HfN for Analog Memory Application2022
- Author(s)
  S. Ohmi, A. Ihara, M. Tanuma, J.Y. Pyo, and J.W. Shin
- Journal Title
  
  80th Device Research Conference (DRC)
  
  Volume: - Pages: 77-78
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Ferroelectric Hafnium Nitride Thin Films Directly Formed on Si(100) Substrate2021
- Author(s)
  S. Ohmi、Y. Ohtaguchi、A. Ihara、H. Morita
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 9 Pages: 1036-1040
- DOI
  10.1109/jeds.2021.3123438
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO2 Formation for MFSFET With Pt Gate Electrode2021
- Author(s)
  S. Ohmi、 M. G. Kim、M. Kataoka、M. Hayashi、R. M. D. Mailig
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 68 Issue: 5 Pages: 2427-2433
- DOI
  10.1109/ted.2021.3064907
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] 界面層を用いた強誘電性ノンドープ HfO2薄膜形成に関する検討2021
- Author(s)
  田沼将一, Joong-Won Shin, 大見俊一郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2021-47 Pages: 12-15
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] HfN multi charge trapping layers for Hf-based metal-oxide-nitride-oxide-Si nonvolatile memory2021
- Author(s)
  S. Ohmi, Y. Horiuchi, H. Morita, A. Ihara, and J.Y. Pyo
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 60 Issue: SB Pages: SBBB03-SBBB03
- DOI
  10.35848/1347-4065/abe09f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Post metallization annealing effect utilizing Pt gate electrode for MFSFET with ferroelectric nondoped HfO2 formed by Ar/O2-plasma sputtering2021
- Author(s)
  Shun-ichiro Ohmi、Masakazu Kataoka、Masaki Hayashi
- Journal Title
  
  MRS Advances
  
  Volume: 6 Issue: 9 Pages: 259-263
- DOI
  10.1557/s43580-021-00065-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Investigation of the HfON Tunneling Layer of MONOS Device for Low-Voltage and High-Speed Operation Nonvolatile Memory Application2021
- Author(s)
  Jooyoung Pyo、Hiroki Morita、Akio Ihara、Shun-ichiro Ohmi
- Journal Title
  
  IEEE Transactions on Semiconductor Manufacturing
  
  Volume: 34 Issue: 3 Pages: 323-327
- DOI
  10.1109/tsm.2021.3068458
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for floating-gate memory applications2021
- Author(s)
  Eun-Ki HONG and Shun-ichiro OHMI
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2021-46 Pages: 8-11
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator2021
- Author(s)
  J.W. Shin、M. Tanuma、S. Ohmi
- Journal Title
  
  79th Device Research Conference, Conf. Dig.
  
  Volume: 79 Pages: 29-30
- DOI
  10.1109/drc52342.2021.9467241
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layer for multi-bit/cell operation2021
- Author(s)
  Jooyoung PYO, Akio Ihara and Shun-ichiro OHMI
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2021-48 Pages: 16-19
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications2021
- Author(s)
  S. Ohmi、H. Morita、M. Hayashi、A. Ihara、J.Y. Pyo
- Journal Title
  
  79th Device Research Conference, Conf. Dig.
  
  Volume: 79 Pages: 67-68
- DOI
  10.1109/drc52342.2021.9467182
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] The Effect of Si Surface Flattening Process on the MISFET With High-k HfNx Multilayer Gate Dielectrics2021
- Author(s)
  Akio Ihara、Hiroki Morita、Jooyoung Pyo、 Shun-Ichiro Ohmi
- Journal Title
  
  IEEE Transactions on Semiconductor Manufacturing
  
  Volume: 34 Issue: 3 Pages: 328-332
- DOI
  10.1109/tsm.2021.3068475
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Threshold Voltage Control for MONOS Nonvolatile Memory with High-k HfN/HfO2 Stacked Layers for Analog Memory Application2020
- Author(s)
  Shun-Ichiro Ohmi and Jooyoung Pyo
- Journal Title
  
  International Conference on Processing & Manufactureing of Advanced Materials Processing, Fabrication, Properties, Applications, Materials Science Forum
  
  Volume: 1016 Pages: 1065-1070
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering2020
- Author(s)
 Shun-ichiro OHMI, Shin Ishimatsu, Yusuke Horiuchi, and Sohya Kudoh
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E103.C Issue: 6 Pages: 299-303
- DOI
 10.1587/transele.2019FUP0001
- NAID
 130007850079
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2020-06-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19H00758
[Journal Article] Reduction of process temperature for Si surface flattening utilizing Ar/H2 ambient annealing and its application to SOI-MISFETs with bilayer HfN high-k gate insulator2020
- Author(s)
  Shun-ichiro Ohmi, Yusuke Horiuchi and, Sohya Kudoh
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 59 Issue: SC Pages: SCCB02-SCCB02
- DOI
  10.7567/1347-4065/ab5173
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Improvement of Hf-based Metal/Oxide/Nitride/Oxide/Si Nonvolatile Memory Characteristics by Si Surface Atomically Flattening2020
- Author(s)
  Shun-ichiro Ohmi, Yusuke Horiuchi, and Sohya Kudoh
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 59
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] A two-step wet etching process for the integration of PdEr/HfO2 gate stack structure on the gate-first Schottky barrier MOSFET2020
- Author(s)
  Rengie Mark D. MAILIG, Yuichiro ARUGA, and Shun-ichiro OHMI
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2020-17 Pages: 16-19
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Bias-voltage-dependent measurement of apparent barrier height on low-work-function thin film2020
- Author(s)
  Katsumi Nagaoka and Shun-ichiro Ohmi
- Journal Title
  
  Journal of Vacuum Science & Technology
  
  Volume: B 38 Issue: 6 Pages: 62801-62801
- DOI
  10.1116/6.0000436
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes2020
- Author(s)
 Min Gee KIM, Masakazu KATAOKA, Rengie Mark D. MAILIG, Shun-ichiro OHMI
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E103.C Issue: 6 Pages: 280-285
- DOI
 10.1587/transele.2019FUP0005
- NAID
 130007850083
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2020-06-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19H00758
[Journal Article] The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process2020
- Author(s)
  Rengie Mark D. MAILIG, Min Gee KIM, Shun-ichiro OHMI
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E103.C Issue: 6 Pages: 286-292
- DOI
  10.1587/transele.2019FUP0006
- NAID
  130007850082
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2020-06-01
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] The Effect of Kr/O2 Sputtering on the Ferroelectric Properties of SrBi2Ta2O9 Thin Film Formation2019
- Author(s)
 B. Zeng, J. Liao, Q. Peng, M. Liao, Y. Zhou, and S. Ohmi
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E102.C Issue: 6 Pages: 441-446
- DOI
 10.1587/transele.2018FUP0005
- NAID
 130007657493
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2019-06-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19H00758
[Journal Article] Low Temperature Formation of Pd2Si with TiN Encapsulating Layer and Its Application to Dopant Segregation Process2019
- Author(s)
 R. M. D. Mailig and S. Ohmi
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E102.C Issue: 6 Pages: 447-452
- DOI
 10.1587/transele.2018FUP0001
- NAID
 130007657485
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2019-06-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19H00758
[Journal Article] The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)2019
- Author(s)
 M. G. Kim and S. Ohmi
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E102.C Issue: 6 Pages: 435-440
- DOI
 10.1587/transele.2018FUP0002
- NAID
 130007657484
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2019-06-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-19H00758
[Journal Article] Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application2019
- Author(s)
  Min Gee KIM, Masakazu KATAOKA, Masaki HAYASHI, Rengie Mark D. MAILIG, and Shun-ichiro OHMI
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2019-56 Pages: 17-20
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications2019
- Author(s)
  Rengie Mark D. MAILIG, Yuichiro ARUGA, Min Gee KIM, and Shun-ichiro OHMI
- Journal Title
  
  電子情報通信学会シリコン材料・デバイス研究会
  
  Volume: SDM2019-61 Pages: 39-43
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] The influence of Hf interlayers for Ferroelectric Non-Doped HfO2 with Suppressing the interfacial Layer Formation2019
- Author(s)
  Shun-ichiro Ohmi, Masakazu Kataoka, and Min Gee Kim
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SI Pages: SIIB16-SIIB16
- DOI
  10.7567/1347-4065/ab19b1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Scanning tunneling spectroscopy study of 20 nm-thick nitrogen-doped lanthanum hexaboride thin film2019
- Author(s)
  K. Nagaoka, W. Hayami, S. Ohmi
- Journal Title
  
  Vacuum
  
  Volume: 170 Pages: 108973-108973
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer2019
- Author(s)
  Jooyoung PYO, Yusuke HORIUCHI, and Shun-ichiro OHMI
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2019-57 Pages: 21-24
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] 多層電荷蓄積層を用いたHf 系 MONOS 型不揮発性多値メモリに関する検討2019
- Author(s)
  堀内勇介, 表柱栄, 大見俊一郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2019-58 Pages: 25-28
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] 界面層を用いた強誘電性ノンドープ HfO2 薄膜の Si(100)基板上への直接形成2019
- Author(s)
  片岡正和, 林将生, Min Gee Kim, 大見俊一郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2019-54 Pages: 7-10
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process2019
- Author(s)
  S. Ohmi, Y. Tsukamoto, and R. M. D. Mailig
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E102.C Issue: 6 Pages: 453-457
- DOI
  10.1587/transele.2018FUP0003
- NAID
  130007657492
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2019-06-01
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00758
[Journal Article] Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes2018
- Author(s)
 Yasutaka Maeda, Mizuha Hiroki, and Shun-ichiro Ohmi
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E101.C Issue: 5 Pages: 323-327
- DOI
 10.1587/transele.E101.C.323
- NAID
 130006729709
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2018-05-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-15K13969, KAKENHI-PROJECT-18J14821
[Journal Article] Investigation of pentacene growth on SiO2 gate insulator after photolithography for nitrogen-doped LaB6 bottom-contact electrode formation2018
- Author(s)
  Yasutaka Maeda, Mizuha Hiroki, and Shun-ichiro Ohmi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 4S Pages: 04FL13-04FL13
- DOI
  10.7567/jjap.57.04fl13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13969, KAKENHI-PROJECT-18J14821
[Journal Article] Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator2018
- Author(s)
  Mizuha Hiroki, Yasutaka Maeda, and Shun-ichiro Ohmi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 2S2 Pages: 02CA08-02CA08
- DOI
  10.7567/jjap.57.02ca08
- NAID
  210000148645
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] Steep subthreshold swing of pentacene-based organic field-effect transistor with nitrogen-doped LaB6 interfacial layer2017
- Author(s)
  Yasutaka Maeda, and Shun-ichiro Ohmi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 4S Pages: 04CL06-04CL06
- DOI
  10.7567/jjap.56.04cl06
- NAID
  210000147643
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET2017
- Author(s)
 Yasutaka Maeda, Shun-ichiro Ohmi, Tetsuya Goto and Tadahiro Ohmi
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E100.C Issue: 5 Pages: 463-467
- DOI
 10.1587/transele.E100.C.463
- NAID
 130005631609
- ISSN
 0916-8524, 1745-1353
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-15K13969
[Journal Article] 非晶質ルブレンをゲート絶縁膜に用いたトップゲート型OFETに関する検討2017
- Author(s)
  大見俊一郎, 廣木瑞葉, 張鴻立, 前田康貴
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2017-4 Pages: 15-18
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] Narrow Line Crystallization of Rubrene Thin Film Enhanced by Yb Interfacial Layer for Single Crystal Channel OFET Application2017
- Author(s)
  Shun-ichiro Ohmi, Mizuha Hiroki, and Yasutaka Maeda
- Journal Title
  
  75th Device Research Conference Conf. Dig.
  
  Volume: 75 Pages: 183-184
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] HfO2をゲート絶縁膜に用いたペンタセンOFETのデバイス特性に関する検討2017
- Author(s)
  前田康貴, 劉野原, 廣木瑞葉, 大見俊一郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: SDM2017-54 Pages: 25-30
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] 低仕事関数金属界面制御層を用いた有機半導体トランジスタのデバイス特性2016
- Author(s)
  大見俊一郎、前田康貴、古山脩、廣木瑞葉
- Journal Title
  
  電子情報通信学会　信学技報
  
  Volume: 116 Pages: 11-15
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] SiO2上におけるウェットプロセスがペンタセン薄膜形成に与える影響2016
- Author(s)
  前田康貴, 廣木瑞葉, 大見俊一郎
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 116 Pages: 31-34
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] High Quality Pentacene Film Formation on N-doped LaB6 Donor Layer2016
- Author(s)
  Yasutaka Maeda, Shun-ichiro Ohmi, Tetsuya Goto, and Tadahiro Ohmi
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E99-C Pages: 535-540
- NAID
  130005148972
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] HfO2をゲート絶縁膜に用いたペンタセンOFETのデバイス特性に関する検討2015
- Author(s)
  前田康貴、劉野原、大見俊一郎
- Journal Title
  
  電子情報通信学会　信学技報
  
  Volume: 115 Pages: 49-52
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13969
[Journal Article] Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer2011
- Author(s)
  Y-U.Song, H.Ishiwara, S.Ohmi
- Journal Title
  
  IEICE Trans.on Electronics E94-C
  
  Pages: 767-770
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206039
[Journal Article] Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer2011
- Author(s)
  Y-U.Song, H.Ishiwara, S.Ohmi
- Journal Title
  
  IEICE Trans.on Electronics
  
  Volume: E94-C(in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206039
[Journal Article] Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics2009
- Author(s)
  Md. Akhtaruzzaman, S. Ohmi, J. Nishida, Y. Yamashita, H. Ishiwara
- Journal Title
  
  Jpn. J. Appl. Phys 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206039
[Journal Article] Study on stability of pentacene-based metal-oxide-semiconductor diodes in air using capacitance-voltage characteristics2009
- Author(s)
  Md.Akhtaruzzaman, S.Ohmi, J.Nishida, Y.Yamashita, H.Ishiwara
- Journal Title
  
  Jpn.J.Appl.Phys. 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206039
[Journal Article] Electrical Characteristics and Stability of Pentacene Field-Effect Transistors in Air Using HfO_2 as a Gate Insulator2009
- Author(s)
  Md.Akhtaruzzaman, S.Ohmi, H.Ishiwara
- Journal Title
  
  MRS Proceedings 1115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206039
[Journal Article] Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly (vinylidene fluoride-trifluoroethylene) copolymer films2008
- Author(s)
  J-W. Yoon, S. Ohmi, B-E. Park, H. Ishiwara
- Journal Title
  
  Appl. Phys. Lett. Vol. 93
  
  Pages: 162904-162906
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206039
[Journal Article] Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly(vinyliden fluoride-trifluoro-ethylene) copolymer films2008
- Author(s)
  J-W.Yoon, S.Ohmi, B-E.Park, H.Ishiwara
- Journal Title
  
  Appl.Phys.Lett. 93
  
  Pages: 162904-162906
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206039
[Journal Article] Impact of Kr gas mixing in oxygen plasma etching of ferroelectric poly (vinylidene fluoride-trifluoroethylene) copolymer films2008
- Author(s)
  J-W. Yoon, S. Ohmi, B-E. Park, H. Ishiwara
- Journal Title
  
  Appl. Phys. Lett 93
  
  Pages: 162904-162906
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206039
[Journal Article] Thermal Stability of LaO_x/Si Interfacial Transition Layer2005
- Author(s)
  H.Nohira, T.Yoshida, H.Okamoto, Ng Jin Aun, Y.Kobayashi, S.Ohmi, H.Iwai, E.Ikenaga, K.Kobayashi, Y.Takata, T.Hattori
- Journal Title
  
  ECS Transactions 1
  
  Pages: 87-95
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, et al.
- Journal Title
  
  Applied Surface Science 234
  
  Pages: 493-496
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Novel SOI Fabrication Process Utilizing the Selective Etching for Si/SiGe Stacked Layers : Separation by Bonding Si Islands Technology (SBSI)2004
- Author(s)
  S.Ohmi et al.
- Journal Title
  
  Second International Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices
  
  Pages: 77-78
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Journal Article] Electrical Characteristics for Lu_2O_3 Thin Films Fabricated by E-beam Deposition Method2004
- Author(s)
  S.Ohmi, M.Takeda, H.Ishiwara, H.Iwai
- Journal Title
  
  Journal of The Electrochemical Society 151
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SoGe stacked layers2004
- Author(s)
  D, Sasaki, S, Ohmi, M.Sakuraba, J.Murota, T.Sakai
- Journal Title
  
  Appl.Surf.Sci.224 2004 270 283 224
  
  Pages: 270-273
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, T.Hattori
- Journal Title
  
  Applied Surface Science 234
  
  Pages: 493-496
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai
- Journal Title
  
  Microelectronic Engineering 72
  
  Pages: 283-287
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Characterization of AlON this films formed by ECR plasma oxidation ofAlN/Si(100)2004
- Author(s)
  Shun-ichiro Ohmi, Go Yamanaka, Tetsushi Sakai
- Journal Title
  
  IEICE Trans.Electron E87-C
  
  Pages: 24-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Journal Article] Characterization of AlON thin films formed by ECR plasma oxidation of AlN/Si(100)2004
- Author(s)
  Shun-ichiro Ohmi et al.
- Journal Title
  
  IEICE Trans. Electon. E87-C
  
  Pages: 24-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Journal Article] Chemical and electronic structures of Lu_2O_3/Si interfacial transition layer2003
- Author(s)
  H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, et al.
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 234-238
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics2003
- Author(s)
  C.Ohshima, J.Taguchi, I.Kashiwagi, H.Yamamoto, S.Ohmi, H.Iwai
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 302-306
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Chemical and electronic structures of Lu2O3/Si interfacial transition layer2003
- Author(s)
  H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, T.Hattori
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 234-238
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Characterization of La_2O_3 and Yb_2O_3 Thin Films for High-k Gate Insulator Application2003
- Author(s)
  S.Ohmi, C.Kobayashi, I.Kashiwagi, C.Ohshima, H.Ishiwara, H.Iwai
- Journal Title
  
  Journal of The Electrochemical Society 150
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Effect of surface treatment of Si substrates and annealing condition on high・k rare earth oxide gate dielectrics2003
- Author(s)
  C.Ohshima, J.Taguchi, I.Kashiwagi, H.Yamamoto, S.Ohmi, H.Iwai
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 302-306
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] AlON thin films formed by ECR plasma oxidation for high-k gate insulator application
- Author(s)
  Go Yamanaka, Shun-ichiro Ohmi, Tetsushi Sakai
- Journal Title
  
  Mat.Res.Soc.Symp: proc. 786
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206039
[Patent] 強誘電性薄膜の形成方法、それを備える半導体装置2022
- Inventor(s)
  大見俊一郎
- Industrial Property Rights Holder
  大見俊一郎
- Industrial Property Rights Type
  特許
- Filing Date
  2022
- Overseas
- Data Source
  KAKENHI-PROJECT-19H00758
[Patent] 積層体、積層体を含む電子源及び電子デバイス、並びに積層体の製法及び浄化方法2021
- Inventor(s)
  長岡克己, 相澤俊,　大見俊一郎
- Industrial Property Rights Holder
  長岡克己, 相澤俊,　大見俊一郎
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-154427
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-19H00758
[Patent] 半導体装置および浮遊ゲートデバイスの製造方法2021
- Inventor(s)
  大見俊一郎
- Industrial Property Rights Holder
  大見俊一郎
- Industrial Property Rights Type
  特許
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-19H00758
[Patent] 半導体装置および浮遊ゲートデバイスの製造方法2021
- Inventor(s)
  大見俊一郎
- Industrial Property Rights Holder
  大見俊一郎
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-082485
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-19H00758
[Patent] 強誘電性薄膜の形成方法、それを備える半導体装置2021
- Inventor(s)
  大見俊一郎
- Industrial Property Rights Holder
  大見俊一郎
- Industrial Property Rights Type
  特許
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-19H00758
[Patent] 半導体装置2021
- Inventor(s)
  大見俊一郎
- Industrial Property Rights Holder
  大見俊一郎
- Industrial Property Rights Type
  特許
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-19H00758
[Patent] 分極/電荷蓄積融合型ハフニウム系不揮発性多値メモリ2019
- Inventor(s)
  大見俊一郎
- Industrial Property Rights Holder
  大見俊一郎
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2019-122028
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] The effect of post metallization annealing sequence on the Pt gate etching immunity of MFSFET with ferroelectric non-doped HfO22023
- Author(s)
  Xinyue Zhang, Joong-Won Shin, Masakazu Tanuma, and Shun-ichiro Ohmi
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] ReRAM characteristics utilizing pentacene/LaBxNy insulator stacked structure2023
- Author(s)
  Feng Hao Li, Eun Ki Hong, Jia Ang Zhao, and Shun-ichiro Ohmi
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Effects of plasma damage reduction for Pt gate electrode deposition on the variation of MFSFET characteristics with ferroelectric nondoped HfO22023
- Author(s)
  Joong-Won Shin, Masakazu Tanuma, and Shun-ichiro Ohmi
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Ar/N2-plasma nitridation process for LaBxNy tunnel layer formation on pentacene-based floating-gate memory utilizing N-doped LaB6 metal and high-k LaBxNy insulator2023
- Author(s)
  Eun-Ki Hong and Shun-ichiro Ohmi
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 強誘電性ノンドープHfO2 薄膜を用いた MFSFET における界面制御層の効果2022
- Author(s)
  田沼将一，Joong-Won Shin，大見俊一郎
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] PMA Condition Dependence on the FeNOS Diodes with Ferroelectric Non-Doped HfO2 Blocking Layer2022
- Author(s)
  Wendi Zhang, Shun-ichiro Ohmi, Masakazu Tanuma,Joong-Won Shin
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Investigation of the etching process for Pt gate electrode on the ferroelectric property of 5 nm thick nondoped HfO2 thin films2022
- Author(s)
  Joong-Won Shin, Masakazu Tanuma, and Shun-ichiro Ohmi
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Ar/N2 plasma nitridation process for the gate stack isolation to realize pentacene based floating gate memory u tilizing N doped LaB6 metal and high-k LaBxNy insulator2022
- Author(s)
  Eun Ki Hong and Shun-ichiro Ohmi
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Ultrathin Ferroelectric Nondoped HfO2 for MFSFET　with High-speed and Low-voltage Operation2022
- Author(s)
  J.W. Shin, M. Tanuma, J. Pyo, and S. Ohmi,
- Organizer
  80th Device Research Conference (DRC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 強誘電性ノンドープ HfO2薄膜を用いた MFSFET のしきい値電圧制御に関する検討2022
- Author(s)
  田沼将一, Joong-Won Shin, 大見俊一郎
- Organizer
  電子情報通信学会技術研究報告
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Deposition rate dependence of the 5 nm-thick ferroelectric nondoped HfO2 on MFSFET characteristics2022
- Author(s)
  Masakazu Tanuma, Joong-Won Shin, and Shun-ichiro Ohmi
- Organizer
  International Symposium on Semiconductor Manufacturing (ISSM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 表面熱析出法を用いた単原子層 h-BN 薄膜/LaB6ヘテロ構造の作製とその評価2022
- Author(s)
  長岡克己,　相澤俊,　大見俊一郎
- Organizer
  電子情報通信学会技術研究報告
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] A study on threshold voltage control of MFSFET with ultrathin ferroelectric nondoped HfO2 gate insulator for analog memory applications2022
- Author(s)
  Joong-Won SHIN, Masakazu TANUMA and Shun-ichiro OHMI
- Organizer
  電子情報通信学会技術研究報告
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 強誘電性ノンドープ HfO2薄膜を用いた MFSFET のしきい値電圧制御に関する検討2022
- Author(s)
  田沼将一，Joong-Won Shin，大見俊一郎
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] LaBxNy Insulator Formation Utilizing Ar/N2-Plasma Nitridation of N-doped LaB6 Metal Layer2022
- Author(s)
  Eun-Ki Hong, Shun-ichiro Ohmi
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 紙の基板を用いた有機強誘電体トランジスタの作製と有機太陽電池への応用2022
- Author(s)
  朴炳垠, 大見俊一郎
- Organizer
  電子情報通信学会技術研究報告
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Evaluation of random telegraph noise in Hf based MONOS nonvolatile memory with HfO2 and HfON tunneling layer2022
- Author(s)
  Jooyoung Pyo and Shun-ichiro Ohmi
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 高機能誘導電体薄膜による低消費電力不揮発性メモリの研究開発2022
- Author(s)
  大見俊一郎
- Organizer
  ENEX2022
- Invited
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Advanced Flash Memory utilizing High-k Thin Films2022
- Author(s)
  Jooyoung PYO, Eun-Ki HONG, and Shun-ichiro Ohmi
- Organizer
  ENEX2022
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] LaB6 系界面制御層を用いたペンタセンｐ型OFET の特性向上と不揮発性メモリへの応用に関する研究2022
- Author(s)
  趙嘉昂, 大見俊一郎
- Organizer
  令和４年度電気学会東京支部第12回学生研究発表会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 強誘電性HfN 薄膜の形成におけるSi 基板面方位依存性に関する研究2022
- Author(s)
  井出明徳, 大見俊一郎
- Organizer
  令和４年度電気学会東京支部第12回学生研究発表会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] The Influence of Kr-Plasma Sputtering for Pt Gate Electrode Deposition on 5 nm Thick Ferroelectric Nondoped HfO2 Formation2022
- Author(s)
  Joong-Won Shin, Shun-ichiro Ohmi, M
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] A study on low-voltage operation of pentacene-based floating-gate memory utilizing Ar/N2-plasma nitridation with N-doped LaB6 metal and high-k LaBxNy insulator2022
- Author(s)
  Eun-Ki HONG, Shun-ichiro OHMI
- Organizer
  電子情報通信学会技術研究報告
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 強誘電性ノンドープHfO2 薄膜形成における界面層厚の低減とMFSFET の動作特性に関する検討2022
- Author(s)
  田沼将一，Joong-Won Shin，大見俊一郎
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Threshold Voltage Variation of MFSFET with 5 nm-Thick Nondoped HfO22022
- Author(s)
  Masakazu Tanuma,Joong-Won Shin, Shun-ichiro Ohmi
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Hf-based Ferroelectric Thin Films for MFSFET Application2022
- Author(s)
  Joong-Won Shin and Shun-ichiro Ohmi
- Organizer
  ENEX2022
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] MFSFET with Ferroelectric HfN for Analog Memory Application2022
- Author(s)
  S. Ohmi, A. Ihara, M. Tanuma, J.Y. Pyo, and J.W. Shin
- Organizer
  80th Device Research Conference (DRC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Low-voltage operation of pentacene-based floating-gate memory utilizing N-doped LaB6 metal and high-k LaBxNy insulator stacked structure2022
- Author(s)
  Eun-Ki Hong, Shun-ichiro Ohmi
- Organizer
  International Conference on Solid State Devices and Material (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Interface property of floating-gate memory structure with LaBxNy insulator and N-doped LaB6 metal layer formed on Si(100) by quasi-static C-V measurement2022
- Author(s)
  Eun-Ki Hong, Joong-Won Shin, and Shun-ichiro Ohmi
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces (ISCSI)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 強誘電性 HfNx薄膜の形成と MFSFET の動作特性に関する検討2022
- Author(s)
  井出明徳, 田沼将一, 井原爽生, 大見俊一郎
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 強誘電性ノンドープHfO2 薄膜の2 段階堆積プロセスに関する検討2022
- Author(s)
  山嵜光義, 大見俊一郎
- Organizer
  令和４年度電気学会東京支部第12回学生研究発表会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Kr plasma sputtering for Pt gate electrode deposition on the ferroelectric property of 5 nm thick nondoped HfO2 directly formed on Si(100)2022
- Author(s)
  Joong-Won Shin, Masakazu Tanuma, and Shun-ichiro Ohmi
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for floating-gate memory applications2021
- Author(s)
  Eun-Ki HONG and Shun-ichiro OHMI
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Sputtering power dependence of Pt gate electrode deposition on 5 nm thick ferroelectric nondoped HfO2 formation2021
- Author(s)
  Joong-Won Shin, Shun-ichiro Ohmi, Masakazu Tanuma
- Organizer
  2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 窒素添加LaB6薄膜を用いた極薄h-BN/LaB6ヘテロ構造の作製2021
- Author(s)
  長岡克己、相澤俊、大見俊一郎
- Organizer
  薄膜材料デバイス研究会第18回研究集会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] The effect of sputtering power for Pt gate electrode deposition on the ferroelectric property of 5 nm thick undoped HfO22021
- Author(s)
  Joong-Won Shin, Masakazu Tanuma, and Shun-ichiro Ohmi
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Investigation of Random Telegraph Noise Characteristics of Hf-based MONOS Nonvolatile Memory Devices with HfO2 and HfON Tunneling Layer2021
- Author(s)
  Jooyoung Pyo, Akio Ihara, and Shun-ichiro Ohmi
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Multi-level 2-bit/cell Operation Utilizing Hf-based MONOS Nonvolatile Memory with HfON Tunneling Layer2021
- Author(s)
  Jooyoung Pyo, Yukinori Ono, and Shun-ichiro Ohmi
- Organizer
  The 6th International Symposium on Biomedical Engineering
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Effect of low sputtering gas pressure on the LaBxNy insulator formation for pentacene-based floating gate memory application2021
- Author(s)
  Eun-Ki Hong, KyungEun Park, and Shun-ichiro Ohmi
- Organizer
  2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] A study of Ar/N2-sputtering gas pressure on electrical characteristics of LaBxNy insulator formed by RF sputtering2021
- Author(s)
  Eun-Ki Hong and Shun-ichiro Ohmi
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator2021
- Author(s)
  J.W. Shin, M. Tanuma, and S. Ohmi
- Organizer
  79th Device Research Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Sputtering gas pressure dependence on the LaBxNy insulator formation2021
- Author(s)
  Eun-Ki Hong and Shun-ichiro Ohmi
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Investigation of suppression of SiO2 interfacial layer formation during ferroelectric non-doped HfO2 formation2021
- Author(s)
  田沼将一, Joong-Won Shin, 大見俊一郎
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 窒素添加LaB6薄膜を用いた極薄h-BN/LaB6ヘテロ構造の作製2021
- Author(s)
  長岡克己、相澤俊、大見俊一郎
- Organizer
  第14 回　日本ホウ素・ホウ化物研究発表会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Suppression of SiO2 interfacial layer formation during ferroelectric nondoped HfO2 formation2021
- Author(s)
  Masakazu Tanuma, Joongwon Shin, Masaki Hayashi, and Shun-ichiro Ohmi
- Organizer
  The 8th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Hf-based MONOS nonvolatile memory for high-speed and low-voltage operation2021
- Author(s)
  Shun-ichiro Ohmi, Yusuke Horiuchi, Jooyoung Pyo, Min Gee Kim
- Organizer
  International Conference on Processing & Manufactoring of advanced Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Pentacene-based organic floating-gate memory utilizing N-doped LaB6 metal and LaBxNy insulating layers for flexible device applications2021
- Author(s)
  Shun-ichiro Ohmi, Kyung Eun Park, Hideki Kamata, and Eun Ki Hong
- Organizer
  APL Material
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Multi level 2 bit/cell O peration U tilizing Hf based MONOS Nonvolatile Memory with HfON Tunneling Layer2021
- Author(s)
  Jooyoung Pyo,　Morita Hiroki, Akio Ihara , and Shun ichiro Ohmi
- Organizer
  The 8th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 界面層を用いた強誘電性ノンドープ HfO2薄膜形成に関する検討2021
- Author(s)
  田沼将一, Joong-Won Shin, 大見俊一郎
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] The effect of inter layers on the ferroelectric undoped HfO2 formation2021
- Author(s)
  Masakazu Tanuma, Joong-Won Shin, and Shun-ichiro Ohmi
- Organizer
  2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Random telegraph noise in Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layer2021
- Author(s)
  Jooyoung Pyo, Akio Ihara, and Shun-ichiro Ohmi
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 新材料による革新的強誘電体メモリの創製2021
- Author(s)
  大見俊一郎
- Organizer
  東京工業大学　新技術説明会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Ferroelectric Nondoped HfO2 Blocking Layer Formation for　Hf-based FeNOS Analog Memory Applications2021
- Author(s)
  S. Ohmi, H. Morita, M. Hayashi, A. Ihara, and J.Y. Pyo
- Organizer
  79th Device Research Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] he Effect of Sputtering Power on the Reliability of MFS Diode with 5 nm Thick Ferroelectric Nondoped HfO22021
- Author(s)
  Joong-Won Shin, Masakazu Tanuma, Shun-ichiro Ohmi
- Organizer
  International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layer for multi-bit/cell operation2021
- Author(s)
  Jooyoung PYO, Akio Ihara and Shun-ichiro OHMI
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] PdErSi Source and Drain for Schottky Barrier MOSFET with HfO2 Gate Insulator Fabricated by Low Thermal Budget Gate-First Process2020
- Author(s)
  Rengie Mark D. Mailig, Yuichiro Aruga, and Shun-ichiro Ohmi
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Investigation of high-k HfN multilayer gate　dielectrics for MISFET fabricated with　Si surface flattening2020
- Author(s)
  Akio Ihara, Jooyoung Pyo, R.M.D. Mailig, Hiroki Morita, and Shun-ichiro Ohmi
- Organizer
  International Symposium on Semiconductor Manufacturing
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO2 and HfON tunneling layer2020
- Author(s)
  Jooyoung Pyo, Yusuke Horiuchi, and Shun-ichiro Ohmi
- Organizer
  67th JSAP Spring Meeting
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Ar/N2-plasma Sputtering Pressure Dependence on Electrical Characteristics of HfON Tunneling Layer Formed by the Plasma Oxidation of HfN for Hf-Based MONOS Diodes2020
- Author(s)
  Jooyoung Pyo, Hiroki Morita, Akio Ihara,and Shun-ichiro Ohmi
- Organizer
  International Symposium on Semiconductor Manufacturing
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] The low temperature fabrication of gate-first Schottky barrier pMOSFET with PdErSi source and drain2020
- Author(s)
  Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, and Shun-ichiro Ohmi
- Organizer
  67th JSAP Spring Meeting
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] HfN Multi Charge Trapping Layers for Hf-based MONOS Nonvolatile Memory2020
- Author(s)
  S. Ohmi, Y. Horiuchi, H. Morita, A. Ihara, and J.Y. Pyo
- Organizer
  2020 International Conference on Solid State Devices and Materials, VIRTUAL conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 多層電荷蓄積層を有するHf系MONOS型不揮発性メモリの検討2020
- Author(s)
  堀内勇介, 森田大貴, 表柱栄, 大見俊一郎
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] A two-step wet etching process for the integration of PdEr/HfO2 gate stack structure on the gate-first Schottky barrier MOSFET2020
- Author(s)
  Rengie Mark D. MAILIG, Yuichiro ARUGA, and Shun-ichiro OHMI
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Hf 界面層を用いた強誘電性ノンドープ HfO2の薄膜化と MFSFET への応用2020
- Author(s)
  Masaki Hayashi, Masakazu Kataoka, Min Gee Kim, and Shun-ichiro Ohmi
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Hf 界面層を用いた強誘電性ノンドープ HfO2薄膜の形成とMFSFET の特性向上2020
- Author(s)
  片岡正和, 林将生, Min Gee Kim, 大見俊一郎
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering2020
- Author(s)
  S. Ohmi, M.G. Kim, M. Kataoka, M. Hayashi, and R.M.D. Mailig
- Organizer
  78th Device Research Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] The Schottky barrier height reduction of PdEr-silicide utilizing dopant segregation process2019
- Author(s)
  R.M.D. Mailig, M.G. Kim, and S. Ohmi
- Organizer
  2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 5 nm thick ferroelectric undoped HfO2 formed on Si(100) with Pt electrodes2019
- Author(s)
  Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, and Shun-ichiro Ohmi
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 高機能ハフニウム系薄膜を用いた新構造不揮発性メモリの研究2019
- Author(s)
  大見俊一郎
- Organizer
  電子情報通信学会北海道支部講演会
- Invited
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] SOI Surface Atomically Flattening by Ar/H2 Annealing for MISFET with High-k HfN Gate Insulator2019
- Author(s)
  Shun-ichiro Ohmi, Yusuke Horiuchi, Shin Ishimatsu, and Sohya Kudoh
- Organizer
  The 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer2019
- Author(s)
  Jooyoung PYO, Yusuke HORIUCHI and Shun-ichiro OHMI
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] The Evaluation of PtHfSi/n-Si(100) Schottky Barrier Height by Boron Dopant Segregation with Short Annealing Duration2019
- Author(s)
  R.M.D. Mailig, M.G. Kim, and S. Ohmi
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Ｈｆ混晶化PtSiの形成とデバイス応用に関する研究2019
- Author(s)
  有賀雄一郎，大見俊一郎
- Organizer
  電気学会東京支部カンファレンス学生研究発表会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications2019
- Author(s)
  Rengie Mark D. MAILIG, Yuichiro ARUGA, Min Gee KIM and Shun-ichiro OHMI
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Ultrathin HfN multilayer gate insulator formation with high dielectric constant induced by interface polarization2019
- Author(s)
  Shun-ichiro Ohmi, Yizhe Ding, and Sohya Kudoh
- Organizer
  77th Device Research Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Ferroelectric undoped HfO2 thin film directly deposited on Si(100) utilizing low temperature PMA process with TiN gate electrode2019
- Author(s)
  M.G. Kim, M. Kataoka, R.M.D. Mailig, and S. Ohmi,
- Organizer
  2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Work function and electronic structure measurements on nitrogen-doped LaB6 thin film prepared by RF sputtering deposition2019
- Author(s)
  K. Nagaoka, and S. Ohmi,
- Organizer
  International Symposium on Sputtering and Plasma Processes 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] In-situ N2-plasma nitridation for high-k HfN gate insulator formed by ECR plasma sputtering2019
- Author(s)
  S. Ohmi, S. Ishimatsu, Y. Horiuchi, and S. Kudoh
- Organizer
  2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] In-situ プロセスによるＨｆ系MONOS構造の形成とデバイス応用に関する研究2019
- Author(s)
  森田大貴，大見俊一郎
- Organizer
  電気学会東京支部カンファレンス学生研究発表会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 界面層を用いた強誘電性ノンドープ HfO2 薄膜の Si(100)基板上への直接形成2019
- Author(s)
  片岡正和, 林将生, Min Gee Kim, 大見俊一郎
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Improvement of Hf-based MONOS Nonvolatile Memory Characteristics by Si surface Atomically Flattening2019
- Author(s)
  Shun-ichiro Ohmi, Yusuke Horiuchi, and Sohya Kudoh
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 強誘電性ノンドープ HfO2薄膜の Si(100)基板上への形成とデバイス応用に関する研究2019
- Author(s)
  林将生，大見俊一郎
- Organizer
  電気学会東京支部カンファレンス学生研究発表会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Work Function and Electronic Structure Measurements on Nitrogen-Doped LaB6 Thin Film by Scanning Tunneling Microscope2019
- Author(s)
  K. Nagaoka, and S. Ohmi
- Organizer
  20th International Vacuum Electronics Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application2019
- Author(s)
  Min Gee KIM, Masakazu KATAOKA, Masaki HAYASHI, Rengie Mark D. MAILIG and Shun-ichiro OHMI
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] Work Function and Electronic Structure Measurements on Nitrogen-doped Lanthanum Hexaboride (LaB6) Thin Film by STM2019
- Author(s)
  K. Nagaoka, and S. Ohmi
- Organizer
  3rd International Conference on Applied Surface Science,
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 多層電荷蓄積層を用いたHf 系 MONOS 型不揮発性多値メモリに関する検討2019
- Author(s)
  堀内勇介, 表柱栄, 大見俊一郎
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H00758
[Presentation] 窒素添加LaB6界面制御層によるしきい値制御を用いたペンタセンPseudo-CMOS2018
- Author(s)
  前田康貴, 廣木瑞葉, 小松勇貴, 大見俊一郎
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] PFP薄膜を用いたn型OFETにおける窒素添加LaB6界面制御層の効果2017
- Author(s)
  前田康貴、廣木瑞葉、大見俊一郎
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] HfO2をゲート絶縁膜に用いたペンタセンOFETのデバイス特性に関する検討2017
- Author(s)
  前田康貴,劉野原, 廣木瑞葉, 大見俊一郎
- Organizer
  電子情報通信学シリコン材料・デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Top-gate type pentacene-based OFET with a-rubrene gate insulator2017
- Author(s)
  Mizuha Hiroki, Yasutaka Maeda, and Shun-ichiro Ohmi
- Organizer
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Influence of Surface Treatment of SiO2 Gate Insulator forPentacene-based OFETs with Nitrogen-doped LaB6 Bottom-Contact Electrode Formation Process2017
- Author(s)
  Yasutaka Maeda, Mizuha Hiroki, and Shun-ichiro Ohmi
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Narrow Line Crystallization of Rubrene Thin Film Enhanced by Yb Interfacial Layer for Single Crystal Channel OFET Application2017
- Author(s)
  Shun-ichiro Ohmi, Mizuha Hiroki, and Yasutaka Maeda
- Organizer
  75th Device Research Conference (DRC)
- Place of Presentation
  米国
- Year and Date
  2017-06-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] 非晶質ルブレンをゲート絶縁膜に用いたトップゲート型OFETに関する検討2017
- Author(s)
  大見俊一郎, 廣木瑞葉, 張鴻立, 前田康貴
- Organizer
  シリコン材料・デバイス研究会/有機エレクトロニクス研究会
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Electron Injection of N-type Pentacene-based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes2017
- Author(s)
  Yasutaka Maeda, and Shun-ichiro Ohmi
- Organizer
  2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2017)
- Place of Presentation
  韓国
- Year and Date
  2017-07-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] ペンタセン薄膜形成に対する窒素添加LaB6電極パターニングの影響2017
- Author(s)
  前田康貴, 廣木瑞葉, 大見俊一郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] 強誘電体クロコン酸薄膜のYb界面制御層上への形成2017
- Author(s)
  張鴻立, 前田　康貴, 大見俊一郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] 非晶質ルブレンをゲート絶縁膜に用いたトップゲート型OFETに関する検討2017
- Author(s)
  大見俊一郎, 廣木瑞葉, 張鴻立, 前田康貴
- Organizer
  電子情報通信学会SDM/OME研究会
- Place of Presentation
  鹿児島
- Year and Date
  2017-04-20
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Top-gate type pentacene-based OFET with a-rubrene gate insulator2017
- Author(s)
  Mizuha Hiroki, Yasutaka Maeda, and Shun-ichiro Ohmi
- Organizer
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)
- Place of Presentation
  福井
- Year and Date
  2017-06-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Narrow Line Crystallization of Rubrene Thin Film Enhanced by Yb Interfacial Layer for Single Crystal Channel OFET Application2017
- Author(s)
  Shun-ichiro Ohmi, Mizuha Hiroki, and Yasutaka Maeda
- Organizer
  75th Device Research Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Electron Injection of N-type Pentacene-based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes2017
- Author(s)
  Yasutaka Maeda, and Shun-ichiro Ohmi
- Organizer
  2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] リフトオフによる微細S/D電極形成とOFETのデバイス特性2017
- Author(s)
  廣木　瑞葉, 前田　康貴, 大見俊一郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] 非晶質ルブレンゲート絶縁膜を用いたデュアルゲート型ペンタセン2017
- Author(s)
  廣木瑞葉, 前田康貴，大見俊一郎
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] AuGeソース/ドレイン電極を用いたボトムコンタクト型ペンタセンOFETの作製2016
- Author(s)
  廣木瑞葉、前田康貴、大見俊一郎
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] ペンタセンOFETのデバイス特性における窒素添加LaB6界面制御層厚依存性2016
- Author(s)
  前田康貴, 大見俊一郎
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Yb界面制御層を用いたルブレン薄膜のチャネル領域結晶化に関する検討2016
- Author(s)
  古山脩、大見俊一郎
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] 窒素添加LaB６界面層によるｐ型ペンタセンOFETの界面制御2016
- Author(s)
  前田康貴、大見俊一郎、後藤哲也、大見忠弘
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Steep Subthreshold Swing of Pentacene-based OFET with Nitrogen-doped LaB6 Interfaciaal Layer2016
- Author(s)
  Yasutaka Maeda, and Shun-ichiro Ohmi
- Organizer
  2016 International Conference on Solid State Devices and Materials
- Place of Presentation
  筑波
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] SiO2上におけるウェットプロセスがペンタセン薄膜形成に与える影響2016
- Author(s)
  前田康貴, 廣木瑞葉, 大見俊一郎
- Organizer
  電子情報通信学会SDM研究会
- Place of Presentation
  仙台
- Year and Date
  2016-10-26
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] 低仕事関数金属界面制御層を用いた有機半導体トランジスタのデバイス特性2016
- Author(s)
  大見俊一郎、前田康貴、古山脩、廣木瑞葉
- Organizer
  電子情報通信学会　シリコン材料・デバイス/有機エレクトロニクス合同研究会
- Place of Presentation
  沖縄
- Year and Date
  2016-04-08
- Invited
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET2016
- Author(s)
  Yasutaka Maeda, Shun-ichiro Ohmi, Tetsuya Goto and Tadahiro Ohmi
- Organizer
  2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)
- Place of Presentation
  函館
- Year and Date
  2016-07-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] 非晶質ルブレンをゲート絶縁膜として用いたトップゲート型ペンセンOFETの作製2016
- Author(s)
  廣木瑞葉, Nithi Atthi, 前田康貴, 大見俊一郎
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] ペンタセン薄膜の初期成長過程の基板依存性2015
- Author(s)
  前田康貴、劉野原、大見俊一郎、後藤哲也、大見忠弘
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Si and Organic Semiconductor Devices with High-k Gate Insulator2015
- Author(s)
  Shun-ichiro Ohmi
- Organizer
  Thai Microelectronics Research Center Lecture
- Place of Presentation
  Thailand
- Year and Date
  2015-12-01
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] HfO2をゲート絶縁膜に用いたペンタセンOFETのデバイス特性に関する検討2015
- Author(s)
  前田康貴、劉野原、大見俊一郎
- Organizer
  電子情報通信学会　シリコン材料・デバイス研究会
- Place of Presentation
  仙台
- Year and Date
  2015-10-29
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] トップゲート構造を有するペンタセンOFETの作製に関する検討2015
- Author(s)
  廣木瑞葉、前田康貴、大見俊一郎
- Organizer
  電気学会東京支部カンファレンス第6回学生研究発表会
- Place of Presentation
  東京
- Year and Date
  2015-08-31
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] 窒化添加LaB６界面層を用いた単一有機半導体CMOSに関する検討2015
- Author(s)
  前田康貴、大見俊一郎
- Organizer
  電子情報通信学会　バイオテクノロジー＆エレクトロニクス研究討論会
- Place of Presentation
  東京
- Year and Date
  2015-12-11
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] High quality pentacene film formation on nitrogen-doped LaB6 donor Layer2015
- Author(s)
  Yasutaka Maeda, Shun-ichiro Ohmi, Tetsuya Goto, and Tadahiro Ohmi
- Organizer
  2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Korea
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13969
[Presentation] Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON high-k gate insulator2010
- Author(s)
  M.Liao, H.Ishiwara, S.Ohmi
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer2010
- Author(s)
  Y-U.Song, S.Ohmi
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Tokyo.
- Year and Date
  2010-06-30
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer2010
- Author(s)
  Y-U.Song, S.Ohmi
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applicatios of Advanced Semiconductor Devices
- Place of Presentation
  東京
- Year and Date
  2010-06-30
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Excellent interface properties of pentacene based metal-oxide-semiconductor diodes utilizing HfON high-k gate insulator2010
- Author(s)
  M.Liao, H.Ishiwara, S.Ohmi
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tokyo.
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Electrical characteristics of OFETs with thin gate dielectric2009
- Author(s)
  Y-U.Song, S.Ohmi, H.Ishiwara
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Tokyo.
- Year and Date
  2009-06-24
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Electrical characteristics and air-stability of pentacene based MOS diodes2008
- Author(s)
  Md. Akhtaruzzaman, S. Ohmi, H. Ishiwara
- Organizer
  Fall Meeting of Mater. Res. Soc
- Place of Presentation
  Boston
- Year and Date
  2008-12-03
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Ferroelectrics characteristics of p(VDF-TrFE) thin films patterned by plasma etching2008
- Author(s)
 J-W.Yoon, S.Ohmi, B-E.Park, H.Ishiwara
- Organizer
 20^<th> Intern.Sympo.on Integrated Ferroelectrics
- Place of Presentation
 Singapore.
- Year and Date
 2008-06-11
- Data Source
 KAKENHI-PROJECT-19206039
[Presentation] A study on air stability of pentacene based MOS diode structures2008
- Author(s)
  Md Akhtaruzzaman, S.Ohmi, J.Nishida, Y.Yamashita, H.Ishiwara
- Organizer
  Intern.Conf.on Solid State Device and Materials
- Place of Presentation
  Tsukuba.
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Ferroelectrics characteristics of p(VDF-TrFE) thin films patterned by plasma etching2008
- Author(s)
  J. W. Yoon, S. Ohmi, H. Ishiwara
- Organizer
  20th Intern. Sympo. on Integrated Ferroelectrics
- Place of Presentation
  Singapore
- Year and Date
  2008-06-11
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Electrical characteristics and air-stability of pentacene based MOS diodes2008
- Author(s)
  Md. Akhtaruzzaman, S. Ohmi, H. Ishiwara
- Organizer
  Fall Meeting of Mater. Res. Soc.
- Place of Presentation
  Boston
- Year and Date
  2008-12-03
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Electrical characteristics and air-stability of pentacene based MOS diodes2008
- Author(s)
  Md.Akhtaruzzaman, S.Ohmi, H.Ishiwara
- Organizer
  Fall Meeting of Mater.Res.Soc.
- Place of Presentation
  Boston.
- Year and Date
  2008-12-03
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Characteristics of metal-ferroelectric-insulator-semiconductor structures based on poly (vinyliden fluoride-trifluoroethylene)2008
- Author(s)
  尹珠元、大見俊一郎、石原宏
- Organizer
  電子情報信学会シリコン材料・デバイス研究会
- Place of Presentation
  東京
- Year and Date
  2008-03-14
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] Ferroelectric characteristics of p(VDF-TrFE) thin films patterned by plasma etching2008
- Author(s)
  J. W. Yoon, S. Ohmi, H. Ishiwara
- Organizer
  20th Intern. Sympo. on Integrated Ferroelectrics
- Place of Presentation
  Singapore
- Year and Date
  2008-06-11
- Data Source
  KAKENHI-PROJECT-19206039
[Presentation] A study on air stability of pentacene based MOS diode structures2008
- Author(s)
  Md. Akhtaruzzaman, S. Ohmi, J. Nishida, Y. Yamashita, H. Ishiwara
- Organizer
  Intern. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-19206039

1. TOKUMITSU Elisuke (10197882)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
2. ISHIWARA Hiroshi (60016657)

# of Collaborated Projects: 4 results

# of Collaborated Products: 20 results
3. IWAI Hiroshi (40313358)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
4. FUJISAKI Yoshihisa (00451013)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. YAMAMOTO Shuu'itiro (50313375)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. AIZAWA Koji (40222450)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. HATTORI Takeo (10061516)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
8. KOBAYASHI Keisuke (50372149)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. TAKATA Yasutaka (90261122)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
10. NOHIRA Hiroshi (30241110)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
11. SAKAI Tetsushi (60313368)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
12. MUROTA Junichi (70182144)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
13. 長岡克己 (80370302)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
14. 後藤哲也 (00359556)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 舟窪浩 (90219080)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. KIJIMA Takeshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. MAEDA Yasutaka

# of Collaborated Projects: 1 results

# of Collaborated Products: 39 results
18. HIROKI Mizuha

# of Collaborated Projects: 1 results

# of Collaborated Products: 25 results
19. FURUYAMA Shu

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results

Oomi Syunichirou 大見 俊一郎

Ohmi Shun-ichiro 大見 俊一郎

OHMI Shunーichiro 大見 俊一郎

OHMI Shun-ichiro 大見 俊一郎

大見 俊一郎 オオミ シユンイチロウ

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The invention of hafnium-based multi-bit non-volatile memory utilizing polarization/charge trap smart functionsPrincipal Investigator

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A study on integrated single organic semiconductor complementary transistors with top-gate structuresPrincipal Investigator

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高誘電体薄膜の超高清浄シリコン基板上への形成Principal Investigator

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[Book] 2020版 薄膜作製応用ハンドブック, 第3章第1節 “誘電率・分極”2020

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[Journal Article] Kr-plasma sputtering for Pt gate electrode deposition on MFSFET with 5 nm-thick ferroelectric nondoped HfO2 gate insulator for analog memory application2023

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[Journal Article] 新材料による革新的強誘電体メモリの創製 ハフニウム系強誘電体が究極の半導体メモリを実現する2022

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Oomi Syunichirou 大見俊一郎

Ohmi Shun-ichiro 大見俊一郎

OHMI Shunーichiro 大見俊一郎

OHMI Shun-ichiro 大見俊一郎

大見俊一郎オオミシユンイチロウ

[Book] 2020版　薄膜作製応用ハンドブック, 第3章第1節 “誘電率・分極”2020

[Journal Article] 新材料による革新的強誘電体メモリの創製　ハフニウム系強誘電体が究極の半導体メモリを実現する2022

[Journal Article] Ultrathin Ferroelectric Nondoped HfO2 for MFSFET　with High-speed and Low-voltage Operation2022