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Sugahara Satoshi  菅原 聡

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SUGAHARA Satoshi  菅原 聡

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Researcher Number 40282842
Other IDs
External Links
Affiliation (Current) 2025: 東京科学大学, 総合研究院, 准教授
Affiliation (based on the past Project Information) *help 2020 – 2024: 東京工業大学, 科学技術創成研究院, 准教授
2016 – 2018: 東京工業大学, 科学技術創成研究院, 准教授
2014 – 2015: 東京工業大学, 像情報工学研究所, 准教授
2010: 東京工業大学, 大学院・総合理工学研究科, 准教授
2009: 東京工業大学, 理工学研究科附属像情報工学研究, 准教授 … More
2009: 東京工業大学, 理工学研究科附属像情報工学研究施設, 准教授
2007: 東京工業大学, 大学院・理工学研究科, 准教授
2007: 東京工業大学, 理工学研究科附属像情報工学研究施設, 准教授
2006: 東京工業大学, 大学院理工学研究科, 助教授
2006: 東京工業大学, 理工学研究科附属像情報工学研究施設, 助教授
2005: 東京大学, 大学院・新領域創成科学研究科, 助手
2005: University of Tokyo, Graduate School of Frontier Sciences, Research Associate, 大学院新領域創成科学研究科, 助手
2005: University of Tokyo, Graduate School of Frontier Sciences, Research Associate, 新領域創成科学研究科, 助手
2003 – 2004: 東京大学, 大学院・工学系研究科, 助手
2000: 東工大, 工学部, 助手
1996 – 1999: 東京工業大学, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Basic Section 60040:Computer system-related / Medium-sized Section 60:Information science, computer engineering, and related fields / 表面界面物性 / 電子デバイス・機器工学
Except Principal Investigator
Applied materials science/Crystal engineering / Science and Engineering / Electron device/Electronic equipment / Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related / 電子デバイス・機器工学
Keywords
Principal Investigator
低消費電力 / 集積回路 / SRAM / CMOS / スピントランジスタ / スピントロニクス / Ge / Si / シリコン / PIM … More / アクセラレータ / ニューラルネットワーク / AIアクセラレータ / マクロ技術 / ニューラルネットワーク・アクセラレータ / processing-in-memory / 低電圧メモリ / 低電圧ロジック / 超低消費電力高速メモリ / 超低消費電力高速ロジック / 超低消費電力高速ロジック・メモリ / 超低電圧トランジスタ / ultralow voltage / Beyond-CMOS / スピン注入源 / スピン蓄積効果 / 非局所デバイス / スピンデバイス / スピン伝導 / スピン注入 / 不揮発 / 低電圧 / メモリ / フリップフロップ / SRAM / パワーゲーティング / SoC / マイクロプロセッサ / 待機時電力 / 強磁性ショットキー接 / MOSデバイス / シリコンテクノロジー / ナノ構造 / 強磁性半導体 / スピンエレクトロニクス / Precursor chemistry / Surface structure / STM / Atomic-layer-epitaxy / Heteropitaxy / ゲルマニウムの表面偏析 / ゲルマニウムヘテロエピタキシ- / 原子層エピタキシ- / 超格子 / ヘテロ構造 / ゲルマニウム / 原子層エピタキシー … More
Except Principal Investigator
GaMnAs / CAICISS / ALE / Si / 強磁性半導体 / MnAs / スピントロニクス / Hetero Structure / Germanium / Silicon / 超格子 / AES / GeFe / トンネル磁気抵抗効果 / ヘテロ構造 / 分子線エピタキシー / スピン / InGaMnAs / GeMn / AFM / Super Lattice / Atomic Layer Epitaxy / 横方向成長 / SOI / 磁気光学効果 / 共鳴トンネル効果 / 強磁性トンネル接合 / スピンMOSFET / ゲルマニウム / シリコン / 横方向結晶成長 / トンネルFE / バイポーラトランジスタ / 化合物半導体 / ナノシート / 低消費電力 / ラテラルHBT / トンネルFET / 逆ピエゾ効果 / 圧電体 / 超磁歪 / サマリウム鉄 / スピン注入磁化反転 / MRAM / スピントランスファートルク / 磁気抵抗変化素子 / 逆磁歪効果 / waveguide-type optical isolator / tunneling magnetoresistance / magneto-optical effect / spin / semiconductor magneto-photonic crystals / 強磁性ナノクラスター / クラスター / キュリー温度 / 磁気光学結晶 / 導波路型光アイソレータ / 半導体磁気光学結晶 / Spin MOSFET / Tunneling magnetoresistance / Heterostructure / Electronic device / Spintronics / 電子スピントロニクスデバイス / キャリアスピン / ヘテロ構造電子デバイス / 磁気抵抗効果 / 強磁性転移温度 / 選択ドープヘテロ構造 / デルタドープ / スピン依存伝導 / MnAs微粒子 / 電子デバイス / super lattice / Ge hetero interface / 平坦性 / 組成分布 / サーファクタント / XPS / Geヘテロ界面 / 最表面組成 / ヘテロ成長 / Ge界面 / 原子層成長 / silicon / Atomic Lager Epitary / Display / Phase-Shift / Lateral Growth / Poly Si / Thin-Film Transistor / Excimer-Laser / デイスプレイ / シリコン薄膜 / 結晶粒径 / エキシマレーザ / SiC / 多結晶シリコン / ディスプレイ / 位相シフト / 多結晶Si / 薄膜トランジスタ / エキシマレーザ結晶化 / Hetero Interface / Manmade Crystal / 人工結晶 / 原子層エピロキシ- / ヘテロ接合 / Ge人工結晶 / 原子層エピタキシ- / ジャイロ磁気効果 / スピン波励起 / 光励起磁性 / 端面発光 / スピン発光ダイオード / スピン依存性光学遷移 / スピン注入 / スピン依存光学遷移 / 金属・半導体ハイブリッド構造 / 磁化才差運動 / 光励起現象 / スピン流 / スピンダイナミクス / キャリア誘起強磁性 / 超高速現象 / スピン光デバイス / 光誘起磁化 / スピン依存光物性 / ナノスピンデバイス / スピントランジスタを / リコンフィギャラブル / スピン起電力 / スピントラジスタ / リコンフイギャラブル / 電子デバイス・集積回路 / スピントランジスタ / 不揮発性メモリ / トンネル磁気抵抗 / 磁性半導体 / 微粒子 / スピントロニクス・デバイス / 再構成可能 / スピンデバイス / 強磁性 / 面方位 / 移動度 / GOI / MOSFET / 低誘電率膜 / 層間絶縁膜 / 低誘電卒膜 / 二酸化シリコン / テトラ・エトキシ・シラン / 液相堆積 Less
  • Research Projects

    (19 results)
  • Research Products

    (223 results)
  • Co-Researchers

    (26 People)
  •  エネルギー極小点動作PIM型ニューラルネットワークアクセラレータの研究開発Principal Investigator

    • Principal Investigator
      菅原 聡
    • Project Period (FY)
      2022 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 60040:Computer system-related
    • Research Institution
      Institute of Science Tokyo
  •  Creation of compound semiconductor lateral heterojunctions and their application to electronic devices

    • Principal Investigator
      Miyamoto Yasuyuki
    • Project Period (FY)
      2021 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Tokyo Institute of Technology
  •  Circuit technology and architecture for ultralow-power high-speed integrated circuits using beyond-CMOS devicesPrincipal Investigator

    • Principal Investigator
      Sugahara Satoshi
    • Project Period (FY)
      2020 – 2023
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 60:Information science, computer engineering, and related fields
    • Research Institution
      Tokyo Institute of Technology
  •  Nonvolatile power-gating technology based on CMOS/spintronics-hybrid CMOS circuitsPrincipal Investigator

    • Principal Investigator
      Sugahara Satoshi
    • Project Period (FY)
      2014 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Tokyo Institute of Technology
  •  Si-channel Hanle-effect spin devices for spin injection and spin transport.Principal Investigator

    • Principal Investigator
      Sugahara Satoshi
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Tokyo Institute of Technology
  •  Ultra-low power magnetization switching technology for magnetic tunnel junctions using inverse magnetostrictive effect

    • Principal Investigator
      Takamura Yota
    • Project Period (FY)
      2014 – 2015
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Tokyo Institute of Technology
  •  Elucidation and control of photo-magnetism in ferromagnetic semiconductors

    • Principal Investigator
      MUNEKATA Hiro
    • Project Period (FY)
      2007 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Tokyo Institute of Technology
  •  Nano-structure functional devices based Ge-based channels

    • Principal Investigator
      TAKAGI Shinichi
    • Project Period (FY)
      2006 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Reconfigurable Nano-Spin Devices

    • Principal Investigator
      TANAKA MASAAKI (TANAKA Masaaki)
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      The University of Tokyo
  •  シリコン系強磁性半導体の創製とそのスピンデバイスへの応用Principal Investigator

    • Principal Investigator
      菅原 聡
    • Project Period (FY)
      2004 – 2006
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Tokyo Institute of Technology
      The University of Tokyo
  •  Semiconductor Spintronics Heterostructure Electronic Devices

    • Principal Investigator
      TANAKA Masaaki
    • Project Period (FY)
      2002 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Semiconductor-baaed magneto-photonic crystals and their applications

    • Principal Investigator
      TANAKA Masaaki
    • Project Period (FY)
      2002 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  表面状態制御によるSiGe混晶表面へのSiの単原子層吸着Principal Investigator

    • Principal Investigator
      菅原 聡
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      表面界面物性
    • Research Institution
      Tokyo Institute of Technology
  •  Study of Si/Ge Strain-Controlled Atomic-Laver Super-Lattices

    • Principal Investigator
      MATSUMURA Masakiyo
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (A).
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology
  •  Evaluation of Si/Ge ALE super lattice with high depth resolution AES method

    • Principal Investigator
      UCHIDA Yasutaka
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Teikyo University of Science and Technology
  •  原子層オーダーの界面急峻性を持ったシリコン/ゲルマニウムヘテロ構造の新しい形成法Principal Investigator

    • Principal Investigator
      菅原 聡
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Tokyo Institute of Technology
  •  テトラ・イソシアネート・シランを用いたシリコンの液相堆積

    • Principal Investigator
      MATSUMURA Masakiyo
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Tokyo Institute of Technology
  •  Study of basic technology for System-on-Glass

    • Principal Investigator
      MATSUMURA Masakiyo
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Tokyo Institute of Technology
  •  Preparation and Characterization of Si-based Manmade Crystals

    • Principal Investigator
      MATSUMURA Masakiyo
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo Institute of Technology

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 Other

All Journal Article Presentation Book Patent

  • [Book] Spin-transistor technology for spintronics/CMOS hybrid logic circuits and systems2016

    • Author(s)
      S. Sugahara, Y. Shuto, and S. Yamamoto
    • Total Pages
      25
    • Publisher
      John Wiley & Sons, Ltd
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Book] Comprehensive Nanoscience and Technology, Vol.4(III-V and Group-IV Based Ferromagnetic Semiconductors for Spintronics)2011

    • Author(s)
      M.Tanaka, S.Ohya, Y.Shuto, S.Yada, S.Sugahara
    • Publisher
      Academic Press (Oxford)
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Book] "III-V and Group-IV Based Ferromagnetic Semiconductors for Spintronics"Comprehensive Nanoscience and Technology, AcademicPress(Oxford)(Vol.40)2011

    • Author(s)
      M.Tanaka, S.Ohya, Y.Shuto, S.Yada, S.Sugahara
    • Total Pages
      500
    • Publisher
      Academic Press (Oxford)
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Book] Electronic Device Architectures for the Nano-CMOS Era-From Ultimate CMOS Scaling to Beyond CMOS Devices, Chapter 52008

    • Author(s)
      S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane and S. Sugahara
    • Total Pages
      23
    • Publisher
      Pan Stanford Publishing
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Book] Electronic Device Architectures for the Nano-CMOS Era - From Ultimate CMOS Scaling to Beyond CMOS Devices, Chapter 52008

    • Author(s)
      S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane and S. Sugahara
    • Publisher
      Pan Stanford Publishing
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Binarized Neural Network Accelerator Macro Using Ultralow-Voltage Retention SRAM for Energy Minimum-Point Operation2022

    • Author(s)
      Shiotsu Yusaku、Sugahara Satoshi
    • Journal Title

      IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

      Volume: 8 Issue: 2 Pages: 134-144

    • DOI

      10.1109/jxcdc.2022.3225744

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-21J10430, KAKENHI-PROJECT-23K24812
  • [Journal Article] CMOS プラットフォームを用いた新技術の創成:超低消費電力 CMOS ロジックシステム,BeyondCMOS デバイス,体温を用いた熱電発電モジュール2022

    • Author(s)
      菅原聡
    • Journal Title

      日本熱電学会誌

      Volume: 18 Pages: 159-162

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K21791
  • [Journal Article] Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits2020

    • Author(s)
      Y. Shiotsu, S. Yamamoto, Y. Shuto, H. Funakubo, M. K. Kurosawa and S. Sugahara
    • Journal Title

      IEEE Trans. on Electron Devices

      Volume: 67 Issue: 9 Pages: 3852-3860

    • DOI

      10.1109/ted.2020.3008891

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20K21791
  • [Journal Article] Design and energy-efficient architectures for nonvolatile static random access memory using magnetic tunnel junctions2019

    • Author(s)
      Kitagata Daiki、Yamamoto Shuu’ichirou、Sugahara Satoshi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SB Pages: SBBB12-SBBB12

    • DOI

      10.7567/1347-4065/ab00f5

    • NAID

      210000135442

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Journal Article] Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM2017

    • Author(s)
      Y. Takamura, Y. Shuto, S. Yamamoto, H. Funakubo, M. K. Kurosawa, S. Nakagawa, S. Sugahara
    • Journal Title

      Solid-State Electronics

      Volume: 128 Pages: 194-199

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Journal Article] Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs2016

    • Author(s)
      Y. Takamura, Y. Shuto, S. Yamamoto, H. Funakubo, M. K. Kurosawa, S. Nakagawa, S. Sugahara.
    • Journal Title

      2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

      Volume: 1 Pages: 72-75

    • DOI

      10.1109/ulis.2016.7440055

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26870192
  • [Journal Article] Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing2015

    • Author(s)
      Taiju Akushichi, Yota Takamura, Yusuke Shuto, and Satoshi Sugahara
    • Journal Title

      J. Appl. Phys.

      Volume: 117

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Journal Article] abrication and characterization of a spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5 /MgO /Si tunnel contact2015

    • Author(s)
      Yu Kawame, Taiju Akushichi, Yota Takamura, Yusuke Shuto, and Satoshi Sugahara
    • Journal Title

      J. Appl. Phys.

      Volume: 117

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Journal Article] Analysis and design of nonlocal spin devices with bias-induced spin-transport acceleration2015

    • Author(s)
      Yota Takamura, Taiju Akushichi, Yusuke Shuto, and Satoshi Sugahara
    • Journal Title

      J. Appl. Phys.

      Volume: 117

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Journal Article] Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices2014

    • Author(s)
      6.Y. Takamura, T. Akushichi, A. Sadano, T. Okihio, Y. Shuto, and S. Sugahara
    • Journal Title

      J. Appl. Phys

      Volume: 115 Issue: 17

    • DOI

      10.1063/1.4868502

    • NAID

      120006582326

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Journal Article] Magnetoresistance of a Spin Metal-Oxide-Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts2010

    • Author(s)
      R.Nakane, T.Harada, K.Sugiura, S.Sugahara, M.Tanaka
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • NAID

      210000069374

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] High Performance Ultrathin(110)-Oriented Ge-On-Insulator pMOSFETs Fabricated by Ge Condensation Technique2010

    • Author(s)
      S.Dissanayake, S.Sugahara, M.Takenaka, S.Takagi
    • Journal Title

      Applied Physics Express 3

      Pages: 41302-41302

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Magnetoresistance of a Spin Metal-Oxide-Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts2010

    • Author(s)
      R.Nakane, T.Harada, K.Sugiura, S.Sugahara, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys. 49

    • NAID

      210000069374

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] A new spin-functional MOSFET based on magnetic tunnel junction technology : pseudo-spin-MOSFET2010

    • Author(s)
      Y.Shuto, R.Nakane, W.Wang, H.Sukegawa, S.Yamamoto, M.Tanaka, K.Inomata, S.Sugahara
    • Journal Title

      Applied Physics Express 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] スピン機能MOSFETによる新しいエレクトロニクスの展開2009

    • Author(s)
      菅原聡
    • Journal Title

      応用物理 vol. 78, no. 3

      Pages: 236-241

    • NAID

      10024751164

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] スピン機能MOSFETによる新しいエレクトロニクスの展開2009

    • Author(s)
      菅原聡
    • Journal Title

      応用物理 78

      Pages: 236-241

    • NAID

      10024751164

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-On-Insulator Metal-Oxide- Semiconductor Field-Effect Transistors2009

    • Author(s)
      K. Morii, S. Dissanayake, S. Tanabe, R. Nakane, M. Takenaka, S. Sugahara, S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys. vol.48,no.4

    • NAID

      210000066561

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors2009

    • Author(s)
      K.Morii, S.Dissanayake, S.Tanabe, R.Nakane, M.Takenaka, S.Sugahara, S.Takagi
    • Journal Title

      Japanese Journal of Applied Physics 48

    • NAID

      210000066561

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] スピン機能MOSFETによる新しいエレクトロニクスの展開2009

    • Author(s)
      菅原聡
    • Journal Title

      応用物理 vol.78,no.3

    • NAID

      10024751164

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008

    • Author(s)
      S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama
    • Journal Title

      IEEE Trans. Electron Devices(Invited Paper) Vol. 55, No. 1

      Pages: 21-39

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] (110) Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka and S. Takagi
    • Journal Title

      Thin Solid Films Vol. 517, Issue 1

      Pages: 178-180

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] (110) Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
    • Journal Title

      Thin Solid Films Vol.517,Issue1

      Pages: 178-180

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Formation of Si and Ge-based FullHeusler Alloy Thin Films Using SOI and GOI Substrates for the HalfMetallic Source and Drain of Spin Transistors2008

    • Author(s)
      Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane and S. Sugahara
    • Journal Title

      ECS Transactions 16

      Pages: 945-952

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance2008

    • Author(s)
      S. Takagi, T. Irisawa, T. Tezuka, T. Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka, N. Sugiyama
    • Journal Title

      IEEE Trans. Electron Devices Vol.55,No.1

      Pages: 21-39

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors2008

    • Author(s)
      Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane and S. Sugahara
    • Journal Title

      ECS Transactions Vol. 16

      Pages: 945-952

    • NAID

      120006581933

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Carrier-transport-enhanced channel CMOS for improved power consumption and performance (lnvited Paper)2008

    • Author(s)
      S. Takagi, T. lrisawa, T. Tezuka, T.Numata, S. Nakaharai, N. Hirashita, Y. Moriyama, K. Usuda, E. Toyoda, S. Dissanayake, M. Shichijo, R. Nakane, S. Sugahara, M. Takenaka and N. Sugiyama
    • Journal Title

      IEEE Transaction on Electron Devices 55

      Pages: 21-39

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] (110)Ultra-thin GOI Layers Fabricated by Ge Condensation Method2008

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka and S. Takagi
    • Journal Title

      Thin Solid Films 517

      Pages: 178-180

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors2008

    • Author(s)
      Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane, S. Sugahara
    • Journal Title

      ECS Transactions Vol.16

      Pages: 945-952

    • NAID

      120006581933

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Magneto-optical and magneto-transport properties of anorphous ferromagnetic semiconductor Gel-xMnx thin films2008

    • Author(s)
      S. Yada, M. Tanaka, and S. Sugahara
    • Journal Title

      Appl. Phys. Lett. 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Gate Dielectric Formation and MIS Interface Characterization on Ge2007

    • Author(s)
      S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara, N. Sugiyama
    • Journal Title

      Microelectronic Engineering vol.84,Issue9-10

      Pages: 2314-2319

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Gate Dielectric Formation and MIS interface Characterization on Ge2007

    • Author(s)
      S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K lkeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama
    • Journal Title

      Microelectronic Engineering 84

      Pages: 2314-2319

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Gate Dielectric Formation and MIS Interface Characterization on Ge2007

    • Author(s)
      S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama
    • Journal Title

      Microelectronic Engineering vol. 84, Issue 9-10

      Pages: 2314-2319

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Ultrathin Ge-On-lnsulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy2007

    • Author(s)
      T. Uehara, H. Matsubara, S. Sugahara and S. Takagi
    • Journal Title

      Japanese Journal of Applied Physics 46

      Pages: 2117-2121

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] (Invited paper) Metal-Oxide-Semiconductor Based Spin Devices for Reconfigurable Logic2007

    • Author(s)
      M. Tanaka and S. Sugahara
    • Journal Title

      IEEE Transactions on Electron Devices 54

      Pages: 961-976

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Structural and magnetic properties of self-organized Ge_<1-x>Mn_x nanocolumns in epitaxially grown Mn-doped Ge thin films2007

    • Author(s)
      S.Yada, M.Tanaka, S.Sugahara
    • Journal Title

      4^<th> International School and Conference on Spintronics and Quantum Information Technology (掲載決定済み)

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] Metal-Oxide-Semiconductor Based Spin Devices for Reconfigurable Logic2007

    • Author(s)
      M.Tanaka, S.Sugahara
    • Journal Title

      Invited paper in the Special Issue on Spintronics, IEEE Transactions on Electron Devices Vol.54(Invited paper)

      Pages: 961-976

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels2007

    • Author(s)
      S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata, N. Hirashita, Y. Moriyama, K. Usuda, S. Dissanayake, M. Tekenaka, S. Sugahara and N. Sugiyama
    • Journal Title

      ECS Transaction 11

      Pages: 61-74

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Mobility- Enhanced Device Technologies Using SiGe/Ge MOS Channels2007

    • Author(s)
      S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata, N. Hirashita, Y. Moriyama, K. Usuda, S. Dissanayake, M. Tekenaka, S. Sugahara, N. Sugiyama
    • Journal Title

      ECS Trans. Vol.11,No.6

      Pages: 61-74

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Reconfigurable Logic Gates Using Single Electron Spin Transistors2007

    • Author(s)
      Pham Nam Hai, S. Sugahara and M. Tanaka
    • Journal Title

      Jpn.J. Appl. Phys. 46

      Pages: 6579-6585

    • NAID

      40015642830

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Metal-Oxide-Semiconductor Based Spin Devices for Reconfigurable Logic2007

    • Author(s)
      M. Tanaka and S. Sugahara
    • Journal Title

      Invited paper in the Special Issue on Spintronics, IEEE Transactions on Electron Devices Vol. 54

      Pages: 961-976

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy2007

    • Author(s)
      T. Uehara, H. Matsubara, S. Sugahara and S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys. vol. 46, no. 4B

      Pages: 2117-2121

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Ultrathin Ge-On-Insulator Metal Source/Drain p-Channel MOSFETs Fabricated By Low Temperature Molecular Beam Epitaxy2007

    • Author(s)
      T. Uehara, H. Matsubara, S. Sugahara, S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys. vol.46,no.4B

      Pages: 2117-2121

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Mobility- Enhanced Device Technologies Using SiGe/Ge MOS Channels2007

    • Author(s)
      S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata, N. Hirashita, Y. Moriyama, K. Usuda, S. Dissanayake, M. Tekenaka, S. Sugahara and N. Sugiyama
    • Journal Title

      ECS Trans. Vol. 11, No. 6

      Pages: 61-74

    • Data Source
      KAKENHI-PROJECT-18063005
  • [Journal Article] Reeonfigurable Logic Gates Using Single Electron Spin Transistors2007

    • Author(s)
      Pham Nam Hai, S. Sugahara and M. Tanaka
    • Journal Title

      Jpn. J. Appl. Phys 46

      Pages: 6579-6585

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Reconfigurable Logic Gates Using Single Electron Spin Transistors2007

    • Author(s)
      Pham Nam Hai, S.Sugahara, M.Tanaka,
    • Journal Title

      Jpn.J.Appl.Phys. 46

      Pages: 6579-6585

    • NAID

      40015642830

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Spin MOSFETs as a basis for silicon-based spin-electronics2006

    • Author(s)
      S.Sugahara
    • Journal Title

      4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV) 4

      Pages: 153-153

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] Ferromagnetism in Mn-doped amorphous Ge thin films2006

    • Author(s)
      S.Yada, M.Tanaka, S.Sugahara
    • Journal Title

      4th Int. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV) 4

      Pages: 119-119

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] Spin MOSFETs As a Basis for Spintronics2006

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      ACM Trans. on Storage vol.2, no.2

      Pages: 197-219

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] Magneto-optical properties of a new group IV ferromagnetic semiconductor Gel-xFex grown by molecular beam epitaxy2006

    • Author(s)
      Y.Shuto, M.Tanaka, S.Sugahara
    • Journal Title

      J. Appl. Phys. 99

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Perspective on Field-Effect Spin-Transistor2006

    • Author(s)
      S.Sugahara
    • Journal Title

      Physica Status Solidi C vol.3, no.12

      Pages: 4405-4413

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] Magneto-optical properties of a new group IV ferromagnetic semiconductor Gel-Fex grown by molecular beam epitaxy2006

    • Author(s)
      Y.Shuto, M.Tanaka, S.Sugahara
    • Journal Title

      J. Appl. Phys. 99

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Preparation and characterization of ferromagnetic DO3-phase Fe3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications2006

    • Author(s)
      R.Nakane, M.Tanaka, S.Sugahara
    • Journal Title

      Applied Physics Letters 89

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Magneto-optical properties of a new group IV ferromagnetic semiconductor Gel-xFex grown by molecular beam epitaxy2006

    • Author(s)
      Y.Shuto, M.Tanaka, S.Sugahara
    • Journal Title

      Journal of Applied Physics 99

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] スピントランジスタの研究動向2006

    • Author(s)
      菅原聡
    • Journal Title

      応用物理学会薄膜・表面物理分科会主催第34回薄膜・表面セミナー 34

      Pages: 59-70

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] "Schottky barrier height of ferromagnet/Si(001) junctions" Appl. Phys. Lett. 89,072110/1-3(2006).2006

    • Author(s)
      K.Sugiura, R.Nakane, S.Sugahara, M.Tanaka
    • Journal Title

      Applied Physics Letters 89

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) and their integrated circuit applications2006

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      ACM Transactions on Storage Vol.2 No.2

      Pages: 197-219

    • Data Source
      KAKENHI-PROJECT-18106007
  • [Journal Article] A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) using a ferromagnetic semiconductor for the channel2005

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      J. Appl. Phys. 97

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Phys.Rev.Lett. 95

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] A Spin Metal-Oxide-Semiconductor Field-Effect Transistor (Spin MOSFET) with a Ferromagnetic Semiconductor for the Channel2005

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      J.Appl.Phys. 97

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-Doped Ge Thin Films2005

    • Author(s)
      S.Sugahara, K.L.Lee, S.Yada, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys 44

    • NAID

      10016873250

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] Spin MOSFETs as a basis for spintronics2005

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      ACM Trans.on Storage (発表予定)

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Physical Review Letters 95

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Spin Metal-Oxide-Semiconductor Field-Effect Transistors (Spin MOSFETs) for Spin-Electronic Integrated Circuits2005

    • Author(s)
      S.Sugahara
    • Journal Title

      IEE Proc.Circuits, Device-Systems 152

      Pages: 355-365

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] スピントランジスタ2005

    • Author(s)
      菅原 聡
    • Journal Title

      電子情報通信学会誌 (発表予定)

    • NAID

      10016585491

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Ainemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Physical Review Letters 95

      Pages: 17201-17201

    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-doped Ge Thin Film2005

    • Author(s)
      S.Sugahara, K.L.Lee, S.Yada, M.Tanaka
    • Journal Title

      Jpn. J. Appl. Phys. (Express Letter) Vol.44

    • NAID

      10016873250

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-based Ge Thin Film2005

    • Author(s)
      S.Sugahara, K.L.Lee, S.Yada, M.Tanaka
    • Journal Title

      Japanese Journal of Applied Physics(Express Letter) 44

    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET)using a ferromagnetic semiconductor for the channel2005

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      J. Appl. Phys. 97

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-doped Ge Thin Film2005

    • Author(s)
      S.Sugahara, K.L.Lee, S.Yada, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys.(Express Letter) 44

    • NAID

      10016873250

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Spin Metal-Oxide-Semiconductor Field-Effect Transistors (Spin MOSFETs) for Spin-Electronic Integrated Circuits2005

    • Author(s)
      S.Sugahara
    • Journal Title

      IEE Proc.Circuits, Devices & Systems (発表予定)

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Virtual Journal of Nanoscale Science & Technology Vol.12, No.2

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] スピントランジスタ2005

    • Author(s)
      菅原聡
    • Journal Title

      電子情報通信学会誌 88

      Pages: 541-550

    • NAID

      10016585491

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Phys. Rev. Lett. 95

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Virtual Journal of Nanoscale Science & Technology Vol.12, No.2

    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] A Spin Metal-Oxide-Semiconductor Field Effect Transistor (Spin MOSFET) with a Ferromagnetic Semiconductor for the Channel2005

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      J.Appl.Phys. (発表予定)

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Journal Article] High Temperature Ferromagnetism in GaAs-based Heterostructures with Mn Delta Doping2005

    • Author(s)
      A.M.Nazmul, T.Amemiya, Y.Shuto, S.Sugahara, M.Tanaka
    • Journal Title

      Physical Review Letters 95

      Pages: 17201-17201

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] A spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) using a ferromagnetic semiconductor for the channel2005

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      Journal of Applied Physics 97

    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Precipitation of Amorphous Ferromagnetic Semiconductor Phase in Epitaxially Grown Mn-doped Ge Thin Film2005

    • Author(s)
      S.Sugahara, K.L.Lee, S.Yada, M.Tanaka
    • Journal Title

      Japanese Journal of Applied Physics (Express Letter) 44

    • NAID

      10016873250

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] Spin-Filter Transistor2004

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys. 43

    • NAID

      10013276677

    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Novel Reconfigurable Logic Gates Using Spin Metal-Oxide- Semiconductor Field-Effect Transistors2004

    • Author(s)
      T.Matsuno, S.Sugahara, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys. 43

      Pages: 6032-6037

    • NAID

      10013573360

    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] "Epitaxial growth and magnetic properties of MnAs/NiAs/MnAs spin-valve trilayers on GaAs(001) substrates (2004).2004

    • Author(s)
      R.Nakane, S.Sugahara, M.Tanaka
    • Journal Title

      Physica E21

      Pages: 991-995

    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] A spin metal-oxide-semiconductor field-effect transistor using half-met allic-ferromagnet contacts for the source and drain2004

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      Appl.Phys.Lett. 84

      Pages: 2307-2309

    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain2004

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      Appl. Phys. Lett. 84

      Pages: 2307-2309

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain2004

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      Applied Physics Letters 84

      Pages: 2307-2309

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Electrical and optical control of ferromagnetism in III-V semiconductor heterostructures at high temperature (-100 K)2004

    • Author(s)
      A.M.Nazmul, S.Kobayashi, S.Sugahara, M.Tanaka
    • Journal Title

      Jpn. J. Appl. Phys. 43

    • NAID

      10012039243

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] A Spin-Filter Transistor and Its Applications2004

    • Author(s)
      S.Sugahara, M.Tanaka
    • Journal Title

      Physica E21

      Pages: 996-1001

    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Effect of post-growth annealing on the morphology and magnetic properties of MnAs thin films grown on GaAs(001) substrates2004

    • Author(s)
      R.Nakane, S.Sugahara, M.Tanaka
    • Journal Title

      J.Appl.Phys. 95

      Pages: 6558-6561

    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Electrical and optical control of ferromagnetism in III-V semiconductor heterostructures at high temperature (〜100K)2004

    • Author(s)
      A.M.Nazmul, S.Kobayashi, S.Sugahara, M.Tanaka
    • Journal Title

      Jpn.J.Appl.Phys. 43

    • NAID

      10012039243

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] Novel Reconfigurable Logic Gates Using Spin Metal-Oxide- Semiconductor Field-Effect Transistors2004

    • Author(s)
      T.Matsuno, S.Sugahara, M.Tanaka
    • Journal Title

      Japanese Journal Applied Physics 43

      Pages: 6032-6037

    • NAID

      10013573360

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Epitaxial growth and magnetic properties of MnAs/NiAs/MnAs spin-valve trilayers on GaAs(001) substrates2004

    • Author(s)
      R.Nakane, S.Sugahara, M.Tanaka
    • Journal Title

      Physica E21

      Pages: 991-995

    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Novel Reconfigurable Logic Gates Using Spin Metal-Oxide- Semiconductor Field-Effect Transistors2004

    • Author(s)
      T.Matsuno, S.Sugahara, M.Tanaka
    • Journal Title

      Jpn. J. Appl. Phys. 43

      Pages: 6032-6037

    • NAID

      10013573360

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Electrical and optical control of ferromagnetism in III-V semiconductor heterostructures at high temperature (~100K)2004

    • Author(s)
      A.M.Nazmul, S.Kobayashi, S.Sugahara, M.Tanaka
    • Journal Title

      Jpn, J.Appl.Phys. 43

    • NAID

      10012039243

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Control of Ferromagnetism in Mn Delta-doped GaAs-based Heterostructures2004

    • Author(s)
      A.M.Nazmul, S.Kobayashi, S.Sugahara, M.Tanaka
    • Journal Title

      Physica E21

      Pages: 937-942

    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] Structural and Transport Properties of Mn-delta-doped GaAs2003

    • Author(s)
      A.M.Nazmul, S.Sugahara, M.Tanaka
    • Journal Title

      J. Cryst. Growth 251

      Pages: 303-310

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Ferromagnetism and High Curie Temperature in Semiconductor Heterostructures with Mn-delta-doped GaAs and p-type Selective Doping2003

    • Author(s)
      A.M.Nazmul, S.Sugahara, M.Tanaka
    • Journal Title

      Phys.Rev. B67

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14205003
  • [Journal Article] Ferromagnetism and High Curie Temperature in Semiconductor Heterostructures with Mn-delta-doped GaAs and p-type Selective Doping2003

    • Author(s)
      A.M.Nazmul, S.Sugahara, M.Tanaka
    • Journal Title

      Physical Review B 67

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Ferromagnetism and High Curie Temperature in Semiconductor Heterostructures with Mn-delta-doped GaAs and p-type Selective Doping2003

    • Author(s)
      A.M.Nazmul, S.Sugahara, M.Tanaka
    • Journal Title

      Phys. Rev. B67

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Transport Properties of Mn delta-doped GaAs and the effect of selective doping2002

    • Author(s)
      A.M.Nazmul, S.Sugahara, M.Tanaka
    • Journal Title

      Appl. Phys. Lett. 80

      Pages: 3120-3122

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Transport Properties of Mn delta-doped GaAs and the effect of selective doping2002

    • Author(s)
      A.M.Nazmul, S.Sugahara, M.Tanaka
    • Journal Title

      Appl. Phys. Lett 80

      Pages: 3120-3122

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14076207
  • [Journal Article] Magneto-Optical Properties of Group IV Semiconductor Ge_<1-x>Fe_x Grown by Low-Temperature Molecular Beam Epitaxy

    • Author(s)
      S.Shuto, M.Tanaka, S.Sugahara
    • Journal Title

      J.Appl.Phys. (印刷中)

    • Data Source
      KAKENHI-PROJECT-16686024
  • [Patent] 電子回路2017

    • Inventor(s)
      菅原 聡,山本 修一郎
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] 電子回路2017

    • Inventor(s)
      菅原聡,北形大樹,山本修一郎
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2017
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] 双安定回路と不揮発性素子とを備える記憶回路2017

    • Inventor(s)
      周藤 悠介,山本 修一郎,菅原 聡
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2017
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] 磁気抵抗素子および記憶回路2016

    • Inventor(s)
      菅原 聡,高村 陽太,中川 茂樹
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2016
    • Acquisition Date
      2018
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] 記憶回路2015

    • Inventor(s)
      菅原 聡,周藤 悠介,山本 修一郎
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015
    • Acquisition Date
      2018
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] ピエゾ抵抗体をチャネルに用いたトランジスタおよび電子回路2015

    • Inventor(s)
      周藤 悠介,黒澤 実,舟窪 浩,山本 修一郎,菅原 聡
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015
    • Acquisition Date
      2018
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] ピエゾ抵抗体をチャネルに用いたトランジスタおよび電子回路2015

    • Inventor(s)
      周藤 悠介,黒澤 実,舟窪 浩,山本 修一郎,菅原 聡
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015
    • Acquisition Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] 記憶回路2015

    • Inventor(s)
      菅原 聡,周藤 悠介,山本 修一郎
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015
    • Acquisition Date
      2017
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] 双安定回路と不揮発性素子とを備える記憶回路2015

    • Inventor(s)
      周藤 悠介,山本 修一郎,菅原 聡
    • Industrial Property Rights Holder
      JST
    • Industrial Property Rights Type
      特許
    • Filing Date
      2015
    • Acquisition Date
      2017
    • Overseas
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Patent] 論理回路および単電子スピントランジスタ2010

    • Inventor(s)
      ファムナムハイ, 菅原聡, 田中雅明
    • Industrial Property Rights Holder
      科学技術振興機構
    • Filing Date
      2010-08-27
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Patent] 論理回路および単電子スピントランジスタ2010

    • Inventor(s)
      ファムナムハイ, 菅原聡, 田中雅明
    • Industrial Property Rights Holder
      科学技術振興機構
    • Filing Date
      2010-08-27
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Patent] 論理回路および単電子スピントランジスタ2006

    • Inventor(s)
      ファムナムハイ, 菅原聡, 田中雅明
    • Industrial Property Rights Holder
      科学技術振興機構
    • Industrial Property Number
      2007-509157
    • Filing Date
      2006-02-02
    • Acquisition Date
      2010-08-27
    • Data Source
      KAKENHI-PROJECT-18106007
  • [Presentation] ピエゾエレクトロニックトランジスタで構成した超低電圧SRAMのばらつき耐性2024

    • Author(s)
      塩津勇作,菅原聡
    • Organizer
      応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21791
  • [Presentation] 並列化MACユニットを有するULVR-SRAMを用いたBNNアクセラレータマクロ2023

    • Author(s)
      塩津勇作,菅原聡
    • Organizer
      応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K24812
  • [Presentation] 新型超低電圧リテンションSRAM (ULVR-SRAM)マクロの設計と性能解析2023

    • Author(s)
      伊藤克俊,塩津勇作,菅原聡
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K24812
  • [Presentation] 超低電圧リテンションSRAMのエネルギー最小点動作とそのBNNアクセラレータへの応用2022

    • Author(s)
      塩津勇作,原拓実,菅原聡
    • Organizer
      電子情報通信学会集積回路研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K24812
  • [Presentation] 新型超低電圧リテンションSRAM (ULVR-SRAM)セルの提案2022

    • Author(s)
      伊藤克俊,塩津勇作,山本修一郎,菅原聡
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K24812
  • [Presentation] 新型超低電圧リテンションSRAM (ULVR-SRAM)セルの提案2022

    • Author(s)
      伊藤克俊,塩津勇作,山本修一郎,菅原聡
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21791
  • [Presentation] 超低電圧リテンションSRAMのパワーゲーティング性能とアーキテクチャ2021

    • Author(s)
      矢野広気,塩津勇作,山本修一郎,菅原聡
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21791
  • [Presentation] ボディバイアス効果を用いたULVR-SRAMセルの設計とそのパワーゲーティング性能2021

    • Author(s)
      塩津勇作,吉田隼,山本修一郎,菅原聡
    • Organizer
      LSIとシステムのワークショップ2021
    • Data Source
      KAKENHI-PROJECT-20K21791
  • [Presentation] バルクデバイスを用いた超低電圧リテンションFlip-Flopの設計と解析2021

    • Author(s)
      松﨑翼,塩津勇作,山本修一郎,菅原聡
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21791
  • [Presentation] ボディバイアス制御ULVR-SRAMの設計と解析2021

    • Author(s)
      斎藤修平,塩津勇作,原拓実,山本修一郎,菅原聡
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21791
  • [Presentation] 擬似不揮発性FFの速度性能優先設計とその回路性能2018

    • Author(s)
      北形大樹,松﨑翼,山本修一郎,菅原聡
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] デュアルモードインバータを用いた疑似不揮発性SRAMの設計と解析2018

    • Author(s)
      吉田隼,北形大樹,山本修一郎,菅原聡
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] デュアルモードインバータを用いた疑似不揮発性FFの設計と解析2018

    • Author(s)
      北形大樹,山本修一郎,菅原聡
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Design and Performance of Virtually Nonvolatile Retention Flip-Flop Using Dual-Mode Inverters2018

    • Author(s)
      D. Kitagata, S. Yamamoto, and S. Sugahara
    • Organizer
      IEEE 2nd New Generation of Circuits & Systems Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] 新構造ピエゾエレクトロニックトランジスタの低リーク設計とそのSRAMへの応用2018

    • Author(s)
      塩津勇作,山本修一郎,舟窪浩,黒澤実,菅原聡
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] A New Architecture of Store Energy and Latency Reduction for Nonvolatile SRAM Based on Spintronics/CMOS-Hybrid Technology2018

    • Author(s)
      D. Kitagata, S. Yamamoto, and S. Sugahara
    • Organizer
      2018 International Conference on Solid State Device and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] 新構造ピエゾエレクトロニックトランジスタの設計とそのデバイス・回路性能2018

    • Author(s)
      塩津勇作,山本修一郎,周藤悠介,舟窪浩,黒澤実,菅原聡
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] デュアルパワースイッチを用いた擬似不揮発性SRAMの設計と解析2018

    • Author(s)
      吉田隼,北形大樹,山本修一郎,菅原聡
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Design and Circuit Performance of a New Piezoelectronic Transistor2018

    • Author(s)
      Y. Shiotsu, S. Yamamoto, Y. Shuto, H. Funakubo, M. K. Kurosawa, and S. Sugahara
    • Organizer
      2018 IEEE Silicon Nanoelectronics Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] 新構造ピエゾエレクトロニックトランジスタの設計方法2018

    • Author(s)
      塩津勇作,山本修一郎,舟窪浩,黒澤実,菅原聡
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Virtually Nonovolatile Retention Flip-Flop Using FinFET Technology2018

    • Author(s)
      D. Kitagata, S. Yamamoto, and S. Sugahara
    • Organizer
      2018 IEEE Silicon Nanoelectronics Workshop
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Virtually Nonvolatile Retention SRAM cell Using Dual-Mode Inverters2018

    • Author(s)
      D. Kitagata, H. Yoshida, S. Yamamoto, and S. Sugahara
    • Organizer
      IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] 階層型ストアフリー電源遮断を用いた不揮発性SRAMのエネルギー性能2018

    • Author(s)
      北形大樹,山本修一郎,菅原聡
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] 不揮発性SRAMの設計とエネルギー性能の解析2017

    • Author(s)
      北形大樹,周藤悠介,山本修一郎,菅原聡
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      東京
    • Year and Date
      2017-03-19
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] 不揮発性SRAMのアーキテクチャとエネルギー性能2017

    • Author(s)
      北形大樹,周藤悠介,山本修一郎,菅原聡
    • Organizer
      電気情報通信学会集積回路研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Analysis of Spin Accumulation in a Si Channel Using CoFe/MgO/Si Spin Injectors2017

    • Author(s)
      T. Akushichi, D. Kitagata, Y. Shuto, and S. Sugahara
    • Organizer
      Electron Device Technology and Manufacturing Conference
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2017-02-28
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Hierarchical Store-Free Architecture for Nonvolatile SRAM Using STT-MTJs2017

    • Author(s)
      D.Kitagata, S.Yamamoto, and S.Sugahara
    • Organizer
      EEE International Electron Devices Meeting (IEDM) MRAM special session 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] 強磁性トンネル接合を用いた不揮発性SRAMの待機時電力削減能力2017

    • Author(s)
      北形大樹,山本修一郎,菅原聡
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Piezoelectronic Transistor for Low-Voltage High-Speed Integrated Electronics2017

    • Author(s)
      Sugahara, Y.Shuto, S.Yamamoto, H.Funakubo, and M.K.Kurosawa
    • Organizer
      IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Robust Design of Electric-field-assisted Nonlocal Si-MOS Spin-devices2016

    • Author(s)
      D. Kitagata, T. Akushichi, Y. Takamura, Y. Shuto, and S. Sugahara
    • Organizer
      2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016)
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2016-06-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Spin injection into silicon using CoFe/TiO2/Si tunnel contacts2016

    • Author(s)
      Y. Ikuse, T. Akushichi, Y. Shuto, Y. Takamura, and S. Sugahara
    • Organizer
      The 13th Joint MMM-Intermag Conference
    • Place of Presentation
      San Diego, CA, USA
    • Year and Date
      2016-01-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Nonvolatile Power-gating Architecture for SRAM using SOTB Technology2016

    • Author(s)
      Y. Shuto, S. Yamamoto, and S. Sugahara
    • Organizer
      2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016)
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2016-06-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Design and Implementation of Nonvolatile Power-Gating SRAM Using SOTB Technology2016

    • Author(s)
      Y. Shuto, S. Yamamoto, and S. Sugahara
    • Organizer
      International Symposium on Low Power Electronics and Design (ISLPED)
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2016-08-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] New power-gating architectures using nonvolatile retention: Comparative study of nonvolatile power-gating (NVPG) and normally-off architectures for SRAM2016

    • Author(s)
      Y. Shuto, S. Yamamoto, and S. Sugahara
    • Organizer
      29th IEEE International Conference on Microelectronic Test Structures (ICMTS)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2016-03-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] 電界アシスト4端子非局所MOSデバイスの解析と設計2016

    • Author(s)
      北形大樹,悪七泰樹,菅原聡
    • Organizer
      第21回スピン工学の基礎と応用 (PASPS-21)
    • Place of Presentation
      札幌市
    • Year and Date
      2016-12-12
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Energy Performance of Nonvolatile Power-Gating SRAM Using SOTB Technology2016

    • Author(s)
      Y. Shuto, S. Yamamoto, and S. Sugahara
    • Organizer
      46th European Solid-State Device/Circuit Conference (ESSDERC/ESSCIRC)
    • Place of Presentation
      Lausanne, Switzerland
    • Year and Date
      2016-09-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs2016

    • Author(s)
      Y. Takamura, Y. Shuto, S. Yamamoto, H. Funakubo, M.K. Kurosawa, S. Nakagawa, S. Sugahara
    • Organizer
      EUROSOI-ULIS 2016
    • Place of Presentation
      Vienna, Austlia
    • Year and Date
      2016-01-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26870192
  • [Presentation] Spin Accumulation in a Si Channel using High-Quality CoFe/MgO/Si Spin Injectors2016

    • Author(s)
      T. Akushichi, D. Kitagata, Y. Takamura, Y. Shuto, and S. Sugahara
    • Organizer
      2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016)
    • Place of Presentation
      Honolulu, USA
    • Year and Date
      2016-06-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] 不揮発性SRAMを用いたパワーゲーティングアーキテクチャの定量比較2015

    • Author(s)
      周藤悠介, 山本修一郎, 菅原聡
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋市, 愛知
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] CoFe/TiO2/Siトンネルコンタクトを用いたSiへのスピン注入2015

    • Author(s)
      生瀬裕之, 悪七泰樹, 周藤悠介, 髙村陽太, 菅原聡
    • Organizer
      第20回スピン工学の基礎と応用 (PASPS-20)
    • Place of Presentation
      仙台市, 宮城
    • Year and Date
      2015-12-03
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices2015

    • Author(s)
      Daiki Kitagata, Taiju Akushichi, Yota Takamura, Yusuke Shuto, Satoshi Sugahara
    • Organizer
      2015 IEEE Silicon Nanoelectronics Workshop (SNW2015)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-06-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] CMOS/スピントロニクス融合技術による待機時消費電力削減アーキテクチャ2015

    • Author(s)
      周藤悠介, 山本修一郎, 菅原聡
    • Organizer
      応用物理学会スピントロニクス研究会
    • Place of Presentation
      千代田区, 東京
    • Year and Date
      2015-11-12
    • Invited
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Fabrication of high quality Co2FeSi0.5Al0.5/CoFe/MgO/Si tunnel contacts for Si-channel spin devices2015

    • Author(s)
      T. Kondo, T. Akushichi, Y. Takamura, Y. Shuto, and S. Sugahara
    • Organizer
      第20回スピン工学の基礎と応用 (PASPS-20)
    • Place of Presentation
      仙台市, 宮城
    • Year and Date
      2015-12-03
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Fabrication of high-quality Co2FeSi0.5Al0.5/CoFe/MgO/Si spin injectors for Si-channel spin devices2015

    • Author(s)
      Tsuyoshi Kondo, Yu Kawame, Yota Takamura, Yusuke Shuto, Satoshi Sugahara
    • Organizer
      2015 IEEE Silicon Nanoelectronics Workshop (SNW2015)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-06-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Design of electric-field-assisted nonlocal silicon-channel spin devices2015

    • Author(s)
      D. Kitagata, T. Akushichi, Y. Takamura, Y. Shuto, and S. Sugahara
    • Organizer
      第20回スピン工学の基礎と応用 (PASPS-20)
    • Place of Presentation
      仙台市, 宮城
    • Year and Date
      2015-12-03
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Quantitative comparison of power-gating architectures for FinFET-based nonvolatile SRAM using spintronics retention technology2015

    • Author(s)
      Yusuke Shuto, Shuu’ichirou Yamamoto, Satoshi Sugahara
    • Organizer
      4th Berkeley Symposium on Energy Efficient Electronic Systems (E3S)
    • Place of Presentation
      Berkeley, CA, USA
    • Year and Date
      2015-10-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Inverse-magnetostriction-induced switching current reductionfor spin-transfer torque MTJs2015

    • Author(s)
      Yota Takamura , Shigeki Nakagawa , Satoshi Sugahara
    • Organizer
      The 76th JSAP Autumn Meeting, 2015
    • Place of Presentation
      NAGOYA CONGRESS CENTER
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-26870192
  • [Presentation] スピントランジスタによる新しいエレクトロニクスの展開2009

    • Author(s)
      菅原聡
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究会(SDM)
    • Place of Presentation
      大岡山, 東京
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Spin-functional MOSFETs2009

    • Author(s)
      菅原聡
    • Organizer
      International Symposium on Silicon Nano Devices in 2030 : Prospects by World's Leading Scientists
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Electrical Properties of(110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Technique2009

    • Author(s)
      S.Dissanayake, Y.Shuto, S.Sugahara, M.Takenaka, S.Takagi
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学、富山県
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] スピン機能MOSFETとその集積回路応用2009

    • Author(s)
      菅原聡
    • Organizer
      日本磁気学会第168回研究会第26回スピンエレクトロニクス専門研究会
    • Place of Presentation
      仙台、富城
    • Year and Date
      2009-11-02
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] High Performance(110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique2009

    • Author(s)
      S.Dissanayake, S.Sugahara, M.Takenaka, S.Takagi
    • Organizer
      International Conference on Solid Sate Devices and Materials(SSDM2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] SOI-Based Spin- Transistor Technologies (invited)2009

    • Author(s)
      S. Sugahara, Y. Takamura
    • Organizer
      215th ECS Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Spin-functional MOSFETs (invited)2009

    • Author(s)
      S. Sugahara
    • Organizer
      International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
    • Place of Presentation
      Tokyo Institute of Technology, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] スピン機能MOSFETとその集積回路応用(invited)2009

    • Author(s)
      菅原聡
    • Organizer
      日本磁気学会第168回研究会第26回スピンエレクトロニクス専門研究会
    • Place of Presentation
      仙台, 宮城
    • Year and Date
      2009-11-02
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique2009

    • Author(s)
      S. Dissanayake, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      SSDM
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Spin-Transistor Electronics with Spin-MOSFETs (invited)2009

    • Author(s)
      Satoshi Sugahara
    • Organizer
      Symposium: Integration of Metallic and Semiconductor Systems in Spin Electronics, The 32nd Annual Conference on Magnetics in Japan
    • Place of Presentation
      Tagajo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] スピン機能MOSFETによる新しいエレクトロニクスの展開(invited)2009

    • Author(s)
      菅原聡
    • Organizer
      応用物理学会シリコンテクノロジー分科会第111回研究集会
    • Place of Presentation
      大岡山, 東京
    • Year and Date
      2009-03-16
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] SOI-Based Spin-Transistor Technologies2009

    • Author(s)
      S.Sugahara, Y.Takamura
    • Organizer
      1st International Symposium on Graphene and Emerging Materials for Post-CMOS Applications, 215th Meeting of The Electrochemical Society
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] スピントランジスタによる新しいエレクトロニクスの展開(invited)2009

    • Author(s)
      菅原聡
    • Organizer
      電子情報通信学会シリコン材料・デバイス研究会(SDM)
    • Place of Presentation
      大岡山, 東京
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] SpihTransistor Electronics with Spin-MOSFETs2008

    • Author(s)
      Satoshi Sugahara
    • Organizer
      Symposium : Integration of Metallic and Semiconductor Systems in Spin Electronics, The 32nd Annual Conference on Magnetics in Japan
    • Place of Presentation
      Tagajo, Japan(invited)
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs2008

    • Author(s)
      K. Morii, S. Dissanayake, S. Tanabe, R. Nakane, M. Takenaka, S. Sugahara and S. Takaai
    • Organizer
      2008 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] RTAを用いて作製したフルホイスラー合金Co2FeSi、Co2FeGeの構造2008

    • Author(s)
      高村陽太, 長浜陽平, 西島輝, 中根了昌, 宗片比呂夫, 菅原聡
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      於日本大学
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Electrical Characteristics of (110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2008

    • Author(s)
      Sanjeewa Dissanayake, Yusuke Shuto, Satoshi Sugahara, Mitsuru Takenaka, Shinichi Takagi
    • Organizer
      2008年秋季第69回応用物理学会学術講演会
    • Place of Presentation
      於中部大学
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication Technique of Si- and Ge-based Full-Heusler Alloys for Half-metallic Source/Drain Spin MOSFETs2008

    • Author(s)
      Yota Takamura, Akira Nishijima, Yohei Nagahama, Ryosho Nakane, Satoshi Sugahara
    • Organizer
      4th Intl. Nanotechnology Conf. on Communication and Cooperation
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Spin transport across depletion region and energy barriers in GaAs -AlGaAs heterostructures2008

    • Author(s)
      H.Munekata, J.Hayafuji, Y.Gyoda, M.Yarimizu, W.Terui, S.Sugahara
    • Organizer
      5th Intern'l Conf.on Physics and Applications of Spin-related Phenomena in Semiconductors
    • Place of Presentation
      Foz do Iguasu, Parana Brazil
    • Year and Date
      2008-08-05
    • Data Source
      KAKENHI-PLANNED-19048020
  • [Presentation] スピンMOSFETとその高機能ロジックへの応用2008

    • Author(s)
      菅原聡
    • Organizer
      STRJワークショップ2007
    • Place of Presentation
      東京
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication Technique of Si and Ge-based FullHeusler Alloys for Half-metallic Source/Drain Spin MOSFETs2008

    • Author(s)
      Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane and S. Sugahara
    • Organizer
      4th Intl. Nanotechnology Conf. on Communication and Cooperation
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] スピン機能MOSFETとその高機能ロジックへの展開-電荷とスピンの融合による新しい高性能・高機能集積回路技術-2008

    • Author(s)
      菅原聡
    • Organizer
      JST Innovation Bridge
    • Place of Presentation
      東京
    • Year and Date
      2008-03-10
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors2008

    • Author(s)
      Yota Takamura, Yohei Nagahama, Akira Nishijima, R. Nakane, S. Sugahara
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)
    • Place of Presentation
      Honolulu, USA
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs2008

    • Author(s)
      Kiyohito Morii, Sanjeewa Dissanayake, Satoshi Tanabe, Ryosho Nakane, Mitsuru Takenaka, Satoshi Sugahara, Shinichi Takagi
    • Organizer
      2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka and S. Takagi
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V), pp. 233-234
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] (110)Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, H. Kumagai, T. Uehara, Y. Shuto, S. Sugahara and S. Takagi
    • Organizer
      5th international Conference on SiGe(C)Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Year and Date
      2007-05-22
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation2007

    • Author(s)
      S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, R. Nakane, S. Sugahara, M. Takenaka
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs2007

    • Author(s)
      S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, R. Nakane, M. Takenaka and S. Sugahara
    • Organizer
      34th International Symposium on Compound Semiconductors (ISCS2007)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2007-10-16
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Germanium-on-insulator (GOI)基板を用いたホイスラー合金の作製とその評価2007

    • Author(s)
      高村陽太, 西島輝, 中根了昌, 宗片比呂夫, 菅原聡
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      於北海道工業大学
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Gate Dielectric Formation and MIS interface Characteriation on Ge(invited)2007

    • Author(s)
      S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. lkeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama
    • Organizer
      15th lnsulating Films on Semiconductors(INFOS2007)
    • Place of Presentation
      Athens, Greece
    • Year and Date
      2007-06-23
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka and S. Takagi
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations- (ISCSI-V)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2007-11-14
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Rapid thermal annealingを用いたフルホイスラー合金の作製と評価2007

    • Author(s)
      高村陽太, 西島輝, 長浜陽平, 中根了昌, 宗片比呂夫, 菅原聡
    • Organizer
      第12回「半導体スピン工学の基礎と応用」研究会
    • Place of Presentation
      吹田
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication of (110) GOI Layers by Ge Condensation of SiGe/ (110) SOI Structure and Application to pMOSFET Devices2007

    • Author(s)
      S. Dissanayake, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      2nd International Conference on Industrial and Information Systems (ICIIS 2007)
    • Place of Presentation
      Sri Lanka
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effects of Annealing on (110) GOI Layers Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      於北海道工業大学
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Gate Dielectric Formation and MIS Interface Characterization on Ge (invited)2007

    • Author(s)
      S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara, N. Sugiyama
    • Organizer
      15th Insulatring Films on Semiconductors (INFOS2007)
    • Place of Presentation
      Athens, Greece
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Gate Dielectric Formation and MIS Interface Characterization on Ge (invited)2007

    • Author(s)
      S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara and N. Sugiyama
    • Organizer
      15th Insulatring Films on Semiconductors (INFOS2007), pp. 2314-2319
    • Place of Presentation
      Athens, Greece
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs2007

    • Author(s)
      S. Takagi, T. Uehara, S. Tanabe, H. Matsubara, R. Nakane, M. Takenaka, S. Sugahara
    • Organizer
      34th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Evaluation of SiO2/GeO2/Ge MlS Interface Properties by Low Temperature Conductance Method2007

    • Author(s)
      H. Matsubara, H. Kumagai, S. Sugahara and M. Takenaka and S. Takagi
    • Organizer
      International Conference on Solid State Devices and Materials(SSDM)
    • Place of Presentation
      Tsukuba, Japan
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, S. Tanabe, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces (ISCSI-V)
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Evaluation of SiO2/GeO2/Ge MIS Interface Properties by Low Temperature Conductance Method2007

    • Author(s)
      H. Matsubara, H. Kumagai, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      Ext. Abs. SSDM
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] (110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, H. Kumagai, T. Uehara, Y. Shuto, S. Sugahara, S. Takagi
    • Organizer
      5th International Conference on SiGe(C) Epitaxy and Heterostructures
    • Place of Presentation
      Marseille, France
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Understanding and Control of Ge MIS Interface Properties (invited)2007

    • Author(s)
      S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Harada, T. Yamamoto, N. Sugiyama, M. Nishikawa, H. Kumagai, H. Matsubara, R. Nakane, M. Takenaka and S. Sugahara
    • Organizer
      4th International Symposium on Advanced Gate Stack Technology
    • Place of Presentation
      Dallas, USA
    • Year and Date
      2007-09-27
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] (110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, H. Kumagai, T. Uehara, Y. Shuto, S. Sugahara and S. Takagi
    • Organizer
      5th International Conference on SiGe(C) Epitaxy and Heterostructures, pp. 57-58
    • Place of Presentation
      Marseille, France
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation2007

    • Author(s)
      S. Takagi, H. Matsubara, M. Nishikawa, T. Sasada, R. Nakane, S. Sugahara and M. Takenaka
    • Organizer
      5th International Symposium on Control of Semiconductor Interfaces-for Next Generation ULSI Process Integrations- (ISCSI-V)
    • Place of Presentation
      Tokyo, Japan
    • Year and Date
      2007-11-13
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication of(110)GOI Layers by Ge Condensation of SiGe/(110)SOI Structure and Application to pMOSFET Devices2007

    • Author(s)
      S. Dissanayake, S. Sugahara, M. Takenaka and S. Takagi
    • Organizer
      2nd International Conference on Industrial and Information Systems(ICIIS 2007)
    • Place of Presentation
      University of Peradeniya, Sri Lanka
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] (110) surface Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method2007

    • Author(s)
      S. Dissanayake, H. Kumagai, Y. Shuto, S. Sugahara, S. Takagi
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      於北海道工業大学
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth2006

    • Author(s)
      T. Uehara, H. Matsubara, S. Sugahara, S. Takagi
    • Organizer
      Ext. Abs. SSDM
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication of SiO2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge2006

    • Author(s)
      H. Kumagai, M. Shichijo, H. Ishikawa, T. Hoshii, S. Sugahara, Y. Uchida, S. Takagi
    • Organizer
      Ext. Abs. SSDM
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Fabrication of (110) GOI Layers by Ge Condensation of SiGe/ (110) SOI Structures2006

    • Author(s)
      Sanjeewa Dissanayake, 熊谷寛, 菅原聡, 高木信一
    • Organizer
      2006秋応物第67回応用物理学会学術講演会
    • Place of Presentation
      於立命館大学
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Metal Source/Drain Ge MOSFET Technologies (invited)2006

    • Author(s)
      S. Takagi, K. Ikeda, T. Maeda, S. Nakaharai, N. Sugiyama, T. Uehara, S. Sugahara
    • Organizer
      Workshop on Gate Stack and Contact Engineering for sub-30nm FETs
    • Place of Presentation
      Monterey Plaza Hotel, Monterey CA, USA
    • Year and Date
      2006-09-05
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Near-threshold voltage operation of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture

    • Author(s)
      7.Yusuke Shuto, Shuu'ichirou Yamamoto, and Satoshi Sugahara
    • Organizer
      2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S2014)
    • Place of Presentation
      Millbrae, CA, USA
    • Year and Date
      2014-10-06 – 2014-10-10
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Analysis and design of nonlocal spin devices with bias-induced spin-transport acceleration

    • Author(s)
      Yota Takamura, Taiju Akushichi, Yusuke Shuto, and Satoshi Sugahara
    • Organizer
      59th Annual Magnetism and Magnetic Materials Conference (MMM2014)
    • Place of Presentation
      Honolulu, HI, USA
    • Year and Date
      2014-11-03 – 2014-11-07
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] 0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture

    • Author(s)
      8.Yusuke Shuto, Shuu'ichirou Yamamoto, and Satoshi Sugahara
    • Organizer
      2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014)
    • Place of Presentation
      Yokohama, Japan
    • Year and Date
      2014-09-09 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] “Fabrication of a CoFe/TiO2/Si tunnel contact and its spin-injector application

    • Author(s)
      Yusuke Shuto, Katsunori Takahashi, Taiju Akushichi, and Satoshi Sugahara
    • Organizer
      59th Annual Magnetism and Magnetic Materials Conference (MMM2014)
    • Place of Presentation
      Honolulu, HI, USA
    • Year and Date
      2014-11-03 – 2014-11-07
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

    • Author(s)
      Taiju Akushichi, Yota Takamura, Yusuke Shuto, and Satoshi Sugahara
    • Organizer
      59th Annual Magnetism and Magnetic Materials Conference (MMM2014)
    • Place of Presentation
      Honolulu, HI, USA
    • Year and Date
      2014-11-03 – 2014-11-07
    • Data Source
      KAKENHI-PROJECT-26630153
  • [Presentation] Comparative Study of Power-Gating Architectures for Nonvolatile SRAM Cells Based on spintronics Technology

    • Author(s)
      Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara
    • Organizer
      2014 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS2014)
    • Place of Presentation
      Okinawa, Japan
    • Year and Date
      2014-11-17 – 2014-11-20
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Electrical Properties of (110)-oriented Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Technique

    • Author(s)
      S. Dissanayake, Y. Shuto, S. Sugahara, M. Takenaka, S. Takagi
    • Organizer
      2008年秋季応用物理学会
    • Data Source
      KAKENHI-PROJECT-18063005
  • [Presentation] Comparative study of power-gating architectures for nonvolatile FinFET-SRAM using spintronics-based retention technology

    • Author(s)
      Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara
    • Organizer
      18th Design, Automation and Test in Europe (DATE15)
    • Place of Presentation
      Grenoble, France
    • Year and Date
      2015-03-09 – 2015-03-13
    • Data Source
      KAKENHI-PROJECT-26249049
  • [Presentation] Design and performance of nonvolatile SRAM cells based on pseudo-spin-FinFET architecture

    • Author(s)
      Y. Shuto, S. Yamamoto, and S. Sugahara
    • Organizer
      2014 IEEE Silicon Nanotechnology Workshop (SNW2014)
    • Place of Presentation
      Honolulu, HI, USA
    • Year and Date
      2014-06-08 – 2014-06-09
    • Data Source
      KAKENHI-PROJECT-26249049
  • 1.  MATSUMURA Masakiyo (30110729)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 2.  UCHIDA Yasutaka (80134823)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 3.  TANAKA MASAAKI (30192636)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 53 results
  • 4.  TAKENAKA Mitsuru (20451792)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 29 results
  • 5.  NAKANE Ryosho (50422332)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 5 results
  • 6.  KITAMOTO Yoshitaka (10272676)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  TAKAGI Shinichi (30372402)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 50 results
  • 8.  OHYA Shinobu (20401143)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 9.  MUNEKATA Hiro (60270922)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 10.  INOUE Junichiro (60115532)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  Takamura Yota (20708482)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 12.  Nakagawa Shigeki (60180246)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 13.  Funakubo Hiroshi (90219080)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  Kurosawa Minoru. K. (70170090)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  Yamamoto Shu'uichiro (50313375)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 16.  Shuto Yusuke (80523670)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 17.  Miyamoto Yasuyuki (40209953)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  ファム ナム ハイ (50571717)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 3 results
  • 19.  橋本 佑介 (20400989)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  今井 茂 (40223309)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  福田 浩一 (00586282)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  荒井 昌和 (90522003)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 23.  後藤 高寛 (70827914)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  HAYAMA Hiroshi
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  黒澤 実
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results
  • 26.  船窪 浩
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results

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