Kojima Kazutoshi 児島一聡

… Alternative Names

児島一聡コジマカズトシ

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Researcher Number	40371041
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究チーム長
Affiliation (based on the past Project Information) *help	2024: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究チーム長 2020 – 2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 研究チーム長
Review Section/Research Field	Except Principal Investigator Broad Section C / Basic Section 30010:Crystal engineering-related / Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords	Except Principal Investigator 高温 / 耐放射線 / CMOS集積回路 / ワイドバンドギャップ半導体 / SiC / 有機金属気相成長 / 不純物 / 高温結晶成長 / AlN / 微細構造 … More / 高温成長 / AlN薄膜 / 窒化アルミニウム / アンモニアフリー / ヘテロエピタキシャル成長 / 窒化物 / 高温動作集積回路 / 耐放射線集積回路 / 電子デバイス / 耐放射線デバイス / 高温動作 / シリコンカーバイド半導体 / 極限環境エレクトロニクス Less

Research on SiC Extreme-Envionment Electronics for Exploring Human's New Frontiers
- Principal Investigator
  
  黒木伸一郎
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Hiroshima University
Research on Silicon-Carbide IoT Platform for Harsh Environment Applications
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Hiroshima University
High-quality hetero-epitaxial AlN research by newly proposed high temperature metalorganic vapor phase epitaxy
- Principal Investigator
  
  SHEN XUQIANG
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  National Institute of Advanced Industrial Science and Technology

All 2022 2021

All Journal Article Presentation

[Journal Article] Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity2022
- Author(s)
  Kazutoshi Kojima, Shin-ichiro Sato, Takeshi Ohshima, and Shin-Ichiro Kuroki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 24 Pages: 245107-245107
- DOI
  10.1063/5.0095457
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252, KAKENHI-PROJECT-20H00355
[Journal Article] Behaviours of the lattice-polarity inversion in AlN growth on c-Al2O3 (0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition2022
- Author(s)
  Shen Xuqiang、Matsuhata Hirofumi、Kojima Kazutoshi
- Journal Title
  
  CrystEngComm
  
  Volume: 24 Issue: 33 Pages: 5922-5929
- DOI
  10.1039/d2ce00652a
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02643
[Journal Article] Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition2022
- Author(s)
  Shen Xu-Qiang、Kojima Kazutoshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 581 Pages: 126496-126496
- DOI
  10.1016/j.jcrysgro.2021.126496
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] High-quality semipolar (10-13) AlN epilayers grown on m-plane sapphire substrates by NH3-free high temperature MOCVD2022
- Author(s)
  X.Q. Shen and K. Kojima
- Organizer
  5th International Workshop on Ultraviolet Materials and Devices (IWUMD 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] Bipolar Characteristics of Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits2022
- Author(s)
  Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Heteroepitaxial growth of AlN by ammonia-free high-temperature metalorganic chemical vapor deposition (AFHT-MOCVD)2022
- Author(s)
  X.Q. Shen and K. Kojima
- Organizer
  International conference on optoelectronic materials, technology and application 2022 (OMTA2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] SiC半導体による極限環境エレクトロニクス構築2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  2022年電子情報通信学会総合大会シンポジウム「極限環境で動作する集積回路」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド極限環境用集積回路および画素デバイスの研究2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  電気学会電子デバイス研究会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用（第2期）」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Lattice-polarity and microstructures in AlN films grown on c-Al2O3 (0001) substrates by NH3-free high-temperature MOCVD2022
- Author(s)
  X.Q. Shen, H. Matsuhata and K. Kojima
- Organizer
  International Workshop on Nitride Semiconductors (IWN2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] 半極性(10-13)面AlNエピ膜中の微細構造の評価2022
- Author(s)
  沈旭強、児島一聡
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] Impact of conductivity type of vanadium doped 4H-SiC epilayer on semi-insulating characteristics2022
- Author(s)
  Kazutoshi Kojima Shinichiro Sato, Takeshi Ohshima and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC 半絶縁基板を用いた Well-less MOSFET の p/n channel 動作2022
- Author(s)
  甲斐陶弥、児島一聡、大島武、田中保宣、黒木伸一郎
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS SRAM のノイズマージン評価2022
- Author(s)
  甲斐陶弥, 児島一聡, 大島武, 田中保宣, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Noise Margins and BTI Characteristics of 4H-SiC CMOS Circuits in High-Temperature Environment2022
- Author(s)
  Takuma Shima, Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] アンモニアフリー高温有機金属気相成長法による高品質(10-13)半極性面AlNヘテロエピタキシャル成長2021
- Author(s)
  沈旭強、児島一聡
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] エピタキシャル成長による n/p ウェル構造を用いた 4H-SiC CMOS インバータの特性評価2021
- Author(s)
  志摩拓真, 甲斐陶弥, 児島一聡, 田中保宣, 大島武, 黒木伸一郎
- Organizer
  応用物理学会・先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] アンモニアフリー高温有機金属気相成長法で成長したAlNヘテロエピタキシャル薄膜中の微細構造評価2021
- Author(s)
  沈旭強、児島一聡
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02643
[Presentation] エピタキシャル成長による4H-SiC CMOS Well形成2021
- Author(s)
  甲斐　陶弥 , 児島一聡, 志摩　拓真, 大島武, 田中保宣, 黒木　伸一郎
- Organizer
  応用物理学会・先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] High quality polar and semipolar AlN grown by ammonia-free high temperature metalorganic chemical vapor deposition2021
- Author(s)
  X. Q. Shen, and K. Kojima
- Organizer
  The 7th International Forum on Wide Bandgap Semiconductors (IFWS2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02643

1. Kuroki Shin-Ichiro (70400281)

# of Collaborated Projects: 2 results

# of Collaborated Products: 10 results
2. 田中保宣 (20357453)

# of Collaborated Projects: 2 results

# of Collaborated Products: 8 results
3. 大島武 (50354949)

# of Collaborated Projects: 2 results

# of Collaborated Products: 10 results
4. 武山昭憲 (50370424)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
5. 牧野高紘 (80549668)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
6. SHEN XUQIANG (50272381)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results

Kojima Kazutoshi 児島 一聡

児島 一聡 コジマ カズトシ

Research Projects

Research Products

Co-Researchers

Research on SiC Extreme-Envionment Electronics for Exploring Human's New Frontiers

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Research on Silicon-Carbide IoT Platform for Harsh Environment Applications

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

High-quality hetero-epitaxial AlN research by newly proposed high temperature metalorganic vapor phase epitaxy

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Behaviours of the lattice-polarity inversion in AlN growth on c-Al2O3 (0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition2022

Author(s)

Journal Title

DOI

Data Source

[Presentation] High-quality semipolar (10-13) AlN epilayers grown on m-plane sapphire substrates by NH3-free high temperature MOCVD2022

Author(s)

Organizer

Data Source

[Presentation] Bipolar Characteristics of Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits2022

Author(s)

Organizer

Data Source

[Presentation] Heteroepitaxial growth of AlN by ammonia-free high-temperature metalorganic chemical vapor deposition (AFHT-MOCVD)2022

Author(s)

Organizer

Data Source

[Presentation] SiC半導体による極限環境エレクトロニクス構築2022

Author(s)

Organizer

Data Source

[Presentation] シリコンカーバイド極限環境用集積回路および画素デバイスの研究2022

Author(s)

Organizer

Data Source

[Presentation] Lattice-polarity and microstructures in AlN films grown on c-Al2O3 (0001) substrates by NH3-free high-temperature MOCVD2022

Author(s)

Organizer

Data Source

[Presentation] 半極性(10-13)面AlNエピ膜中の微細構造の評価2022

Author(s)

Organizer

Data Source

[Presentation] Impact of conductivity type of vanadium doped 4H-SiC epilayer on semi-insulating characteristics2022

Author(s)

Organizer

Data Source

[Presentation] 4H-SiC 半絶縁基板を用いた Well-less MOSFET の p/n channel 動作2022

Author(s)

Organizer

Data Source

[Presentation] 4H-SiC CMOS SRAM のノイズマージン評価2022

Author(s)

Organizer

Data Source

[Presentation] Noise Margins and BTI Characteristics of 4H-SiC CMOS Circuits in High-Temperature Environment2022

Author(s)

Kojima Kazutoshi 児島一聡

児島一聡コジマカズトシ