Ohshima Takeshi 大島武

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OHSHIMA Takeshi 大島武

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Researcher Number	50354949
Other IDs	https://orcid.org/0000-0002-7850-3164
Affiliation (Current)	2025: 国立研究開発法人量子科学技術研究開発機構, 高崎量子技術基盤研究所量子機能創製研究センター, センター長
Affiliation (based on the past Project Information) *help	2024: 国立研究開発法人量子科学技術研究開発機構, 高崎量子技術基盤研究所量子機能創製研究センター, センター長 2022 – 2023: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所量子機能創製研究センター, センター長 2020 – 2021: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 部長 2019 – 2020: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 部長(定常) 2016 – 2019: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 上席研究員(定常) … More 2016: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所先端機能材料研究部, 上席研究員 2016: 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所・先端機能材料研究部, プロジェクトリーダー 2015: 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 研究主幹 2015: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究主幹 2013 – 2014: 独立行政法人日本原子力研究開発機構, 原子力科学研究部門量子ビーム応用研究センター, 研究主幹 2005 – 2012: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 研究主幹 2011: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門, 半導体耐放射線性研究グループリーダー 2009: 独立行政法人日本原子力研究開発機構, 量子ビーム応用研究部門・環境・産業応用研究開発ユニット, 研究主幹 2006: Japan Atomic Energy Agency, Quantum Beam Science Directorate, Senior Scientist 2004: 日本原子力研究所, 材料開発部, 副主任研究員 Less
Review Section/Research Field	Principal Investigator Crystal engineering / Nuclear engineering / Medium-sized Section 30:Applied physics and engineering and related fields / Applied materials science/Crystal engineering Except Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Nuclear engineering / Basic Section 21050:Electric and electronic materials-related / Broad Section C / Electron device/Electronic equipment / Energy engineering … More / Particle/Nuclear/Cosmic ray/Astro physics / Applied materials science/Crystal engineering / Nanostructural science / Science and Engineering Less
Keywords	Principal Investigator 光物性 / 結晶工学 / 量子センシング / 放射線 / 半導体物性 / 格子欠陥 / 炭化ケイ素(SiC) / スピン欠陥 / 量子エレクトロニクス / 単一光源欠陥中心 … More / 量子コンピューティング / 新機能材料 / スピン / 欠陥エンジニアリング / 炭化ケイ素 / 界面準立 / 結晶損傷 / 電荷収集 / イオン照射効果 / 炭化ケイ素(Sic) / 界面準位 / イオンビーム誘起過渡電流 / Mosキャパシタ / ゲート酸化膜リーク電流 / 容量変化 / MOSキャパシタ / ビーム科学 / 放射線工学 / イオンビーム誘起過度電流(TIBIC) / 少数キャリア拡散長 / 電荷収集効率(CCE) / イオン誘起過渡電流(TIBIC) / n^+pダイオード / 非イオン化エネルギー損失 / 照射損傷 / 電荷収集効率 / p^+n及びn^+pダイオード / 耐放射線性検出器 / 放射線理工学 … More Except Principal Investigator SiC / 耐放射線 / CMOS集積回路 / MOS界面 / 単一光子源 / 炭化ケイ素(SiC) / 界面 / DFT / 電子デバイス / 極限環境エレクトロニクス / シリコンカーバイド半導体 / ダイヤモンド / 炭化ケイ素 / 量子コンピュータ / 垂直磁気異方性磁化膜 / 円偏光 / スピン電流注入 / 単一光子源(SPS) / 偏光 / スピン電流 / ワイドバンドギャップ半導体 / 高温 / 移動度キラー / 局在 / 電子状態計算 / 有効質量近似 / 界面処理 / 虚時間発展法 / SiC-MOS / 界面欠陥 / 量子暗号通信 / 炭化ケイ素(SiC)半導体 / もつれ光子対 / 高温動作集積回路 / 耐放射線集積回路 / 耐放射線デバイス / 高温動作 / 密度汎関数理論 / 第一原理計算 / 酸化 / ダングリングボンド / Pbcセンタ / 点欠陥 / α-Ga2O3 / 移動度 / SiC/SiO2 / 単一光子光源 / 欠陥 / 極限環境 / 電子デバイス・集積回路 / 電子デバイス・電子機器 / 廃炉技術 / 耐高温動作 / MOSFET / シリコンカーバイド / 格子欠陥 / 表面改質 / 欠陥デザイン / 水素吸蔵初期反応速度 / 水素吸蔵合金 / 量子ビーム / マイクロビーム / 位置敏感型検出器 / 位置敏感型 / ワイドバンドギャップ / IBIC / 高エネルギーイオン / 大気取出し窓兼イオン位置検出器 / ダイヤモンド薄膜 / ダイヤモンド検出器 / 低質量ダークマター / ダークマター / 低雑音集積回路 / ワイドギャップ半導体 / 軽い暗黒物質 / 半導体検出器 / 暗黒物質 / radiation effect / characterization / solar cell / luminescence / レミネッセンス / 放射線劣化 / 結晶評価 / 太陽電池 / ルミネッセンス / 同位体制御 / 電子スピン共鳴 / NVセンター / 量子コンピューティング / スピントロニクス / 量子情報 / 実験 / 照射効果 / 挙動 / 粒子 / 超高エネルギー / スピン緩和 / 燐ドナー / パルス電子スピン共鳴 / シリコン / 電子スピン / 半導体物性 Less

Research on SiC Extreme-Envionment Electronics for Exploring Human's New Frontiers
- Principal Investigator
  
  黒木伸一郎
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Hiroshima University
Realization of an entangled photon-pair emitting device using silicon carbide semiconductor
- Principal Investigator
  
  土方泰斗
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Saitama University
Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS device
- Principal Investigator
  
  土方泰斗
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Saitama University
Elucidation of SiC-MOS interfaces by developing electronic structure calculation methods
- Principal Investigator
  
  Matsushita Yu-ichiro
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
Research on Silicon-Carbide IoT Platform for Harsh Environment Applications
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Hiroshima University
Quantum state control with advanced optical technique for spin defects in silicon carbidePrincipal Investigator
- Principal Investigator
  
  Ohshima Takeshi
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  National Institutes for Quantum Science and Technology
Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic properties
- Principal Investigator
  
  Matsushita Yu-ichiro
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
Quantum state measurements of single photon sources in silicon carbide devicesPrincipal Investigator
- Principal Investigator
  
  Ohshima Takeshi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
Research on Silicon Carbide Harsh Environment Electronics
- Principal Investigator
  
  Kuroki Shin-Ichiro
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
Control of Photons and Spins of High-Brightness Single Photon Center in Silicon CarbidePrincipal Investigator
- Principal Investigator
  
  OHSHIMA Takeshi
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
  Japan Atomic Energy Agency
Study of diamond thin film as a beam exit window to the atmosphere for high energy ions and a position-sensitivity detector
- Principal Investigator
  
  Kamiya Tomihiro
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Nuclear engineering
- Research Institution
  Gunma University
  Japan Atomic Energy Agency
The hydrogen occlusion materials high function in the defect design by the quantum beam irradiation
- Principal Investigator
  
  ABE Hiroshi
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Energy engineering
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
  Japan Atomic Energy Agency
Development of wide gap semiconductor pixel detector for light dark matter search
- Principal Investigator
  
  Tanaka Manobu
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Particle/Nuclear/Cosmic ray/Astro physics
- Research Institution
  High Energy Accelerator Research Organization
Controlling of Single Photon Source in Silicon CarbidePrincipal Investigator
- Principal Investigator
  
  OHSHIMA Takeshi
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Japan Atomic Energy Agency
Mechanism of the Destruction of Oxide on Silicon Carbide due to ChargeInduced by Ion BeamsPrincipal Investigator
- Principal Investigator
  
  OHSHIMA Takeshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nuclear engineering
- Research Institution
  Japan Atomic Energy Agency
Experimental study on behavior and radiation effect of very high-energy particles in matters
- Principal Investigator
  
  NAKASHIMA Hiroshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nuclear engineering
- Research Institution
  Japan Atomic Energy Agency
2キュービットゲートを用いた鎖状スケーラブル量子コンピュータの開発
- Principal Investigator
  
  磯谷順一
- Project Period (FY)
  2009
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Nanostructural science
- Research Institution
  University of Tsukuba
Induced Charge Evaluation for the Development of Particle Detectors Fabricated on Silicon CarbidePrincipal Investigator
- Principal Investigator
  
  OHSHIMA Takeshi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Nuclear engineering
- Research Institution
  Japan Atomic Energy Agency
半導体電子スピン系量子コンピュータの要素技術の開発
- Principal Investigator
  
  磯谷順一
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  University of Tsukuba
Development of Luminescence Technique for Accurate Diagnostic Characterization of Semiconductor Materials for Solar Cells
- Principal Investigator
  
  TAJIMA Michio
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Japan Aerospace Exploration Agency

[Book] "SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source" (Chapter 8) in "Handbook of Silicon Carbide Materials and Devices"2023
- Author(s)
  Y. Hijikata, Y.-I. Matsushita, and T. Ohshima
- Total Pages
  464
- Publisher
  Taylor & Francis, CRC
- ISBN
  9780367188269
- Data Source
  KAKENHI-PROJECT-22K18292
[Book] "SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source" (Chapter 8) in "Handbook of Silicon Carbide Materials and Devices"2023
- Author(s)
  Y. Hijikata, Y.-I. Matsushita, and T. Ohshima
- Total Pages
  464
- Publisher
  Taylor & Francis, CRC
- ISBN
  9780367188269
- Data Source
  KAKENHI-PROJECT-23K22787
[Book] Handbook of Silicon Carbide Materials and Devices2023
- Author(s)
  Yasuto Hijikata, Yu-ichiro Matsushita, Takeshi Ohshima
- Total Pages
  19
- Publisher
  CRC Press
- ISBN
  9780367188269
- Data Source
  KAKENHI-PROJECT-21H04553
[Journal Article] Optically detected magnetic resonance of silicon vacancies in 4H-SiC at elevated temperatures toward magnetic sensing under harsh environments2023
- Author(s)
  Motoki Shu、Sato Shin-ichiro、Saiki Seiichi、Masuyama Yuta、Yamazaki Yuichi、Ohshima Takeshi、Murata Koichi、Tsuchida Hidekazu、Hijikata Yasuto
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 133 Issue: 15 Pages: 154402-154402
- DOI
  10.1063/5.0139801
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00355, KAKENHI-PROJECT-22K18292, KAKENHI-PROJECT-23K22787
[Journal Article] Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor2023
- Author(s)
  Masayuki Tsutsumi, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 1 Pages: 100-103
- DOI
  10.1109/led.2022.3226494
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Spin property improvement of boron vacancy defect in hexagonal boron nitride by thermal treatment2023
- Author(s)
  T. Suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y. Nishiya, Y.-i. Matsushita, K. Harii, Y. Masuyama, Y. Hijikata, and T. Ohshima
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 3 Pages: 032006-032006
- DOI
  10.35848/1882-0786/acc442
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K18292, KAKENHI-PROJECT-20K05352, KAKENHI-PROJECT-23K22787, KAKENHI-PROJECT-21H04553
[Journal Article] Two-Emitter Multimode Cavity Quantum Electrodynamics in Thin-Film Silicon Carbide Photonics2023
- Author(s)
  Lukin Daniil M.、Guidry Melissa A.、Yang Joshua、Ghezellou Misagh、Deb Mishra Sattwik、Abe Hiroshi、Ohshima Takeshi、Ul-Hassan Jawad、Vuckovic Jelena
- Journal Title
  
  Physical Review X
  
  Volume: 13 Issue: 1
- DOI
  10.1103/physrevx.13.011005
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Electrical detection of nuclear spins via silicon vacancies in silicon carbide at room temperature2022
- Author(s)
  Nishikawa Tetsuri、Morioka Naoya、Abe Hiroshi、Morishita Hiroki、Ohshima Takeshi、Mizuochi Norikazu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 121 Issue: 18 Pages: 184005-184005
- DOI
  10.1063/5.0115928
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K20502, KAKENHI-PROJECT-20H00355, KAKENHI-PROJECT-21H04653, KAKENHI-PROJECT-23K22796
[Journal Article] Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors2022
- Author(s)
  Akinori Takeyama, Takahiro Makino, Yasunori Tanaka, Shin-Ichiro Kuroki, and Takeshi Ohshima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 24 Pages: 244503-244503
- DOI
  10.1063/5.0095841
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Five-second coherence of a single spin with single-shot readout in silicon carbide2022
- Author(s)
  Anderson Christopher P.、Glen Elena O.、Zeledon Cyrus、Bourassa Alexandre、Jin Yu、Zhu Yizhi、Vorwerk Christian、Crook Alexander L.、Abe Hiroshi、Ul-Hassan Jawad、Ohshima Takeshi、Son Nguyen T.、Galli Giulia、Awschalom David D.
- Journal Title
  
  Science Advances
  
  Volume: 8 Issue: 5
- DOI
  10.1126/sciadv.abm5912
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors2022
- Author(s)
  Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 10 Pages: 1713-1716
- DOI
  10.1109/led.2022.3200124
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H00252
[Journal Article] Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC2022
- Author(s)
  Zwier Olger V.、Bosma Tom、Gilardoni Carmem M.、Yang Xu、Onur Alexander R.、Ohshima Takeshi、Son Nguyen T.、van der Wal Caspar H.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 9 Pages: 094401-094401
- DOI
  10.1063/5.0077112
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide2022
- Author(s)
  Morioka Naoya、Liu Di、Soykal Oney O.、Gediz Izel、Babin Charles、Stohr Rainer、Ohshima Takeshi、Son Nguyen Tien、Ul-Hassan Jawad、Kaiser Florian、Wrachtrup Jorg
- Journal Title
  
  Physical Review Applied
  
  Volume: 17 Issue: 5
- DOI
  10.1103/physrevapplied.17.054005
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Modified divacancies in 4H-SiC2022
- Author(s)
  Son N. T.、Shafizadeh D.、Ohshima T.、Ivanov I. G.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 132 Issue: 2 Pages: 025703-025703
- DOI
  10.1063/5.0099017
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity2022
- Author(s)
  Kazutoshi Kojima, Shin-ichiro Sato, Takeshi Ohshima, and Shin-Ichiro Kuroki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 131 Issue: 24 Pages: 245107-245107
- DOI
  10.1063/5.0095457
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00252, KAKENHI-PROJECT-20H00355
[Journal Article] Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars2021
- Author(s)
  Parker R. A.、Dontschuk N.、Sato S.-I.、Lew C. T.-K.、Reineck P.、Nadarajah A.、Ohshima T.、Gibson B. C.、Castelletto S.、McCallum J. C.、Johnson B. C.
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 130 Issue: 14 Pages: 145101-145101
- DOI
  10.1063/5.0055100
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355, KAKENHI-PROJECT-18H01483, KAKENHI-PROJECT-17KK0137
[Journal Article] Influences of hydrogen ion irradiation on NcVsi formation in 4H-silicon carbide2021
- Author(s)
  Narahara Takuma、Sato Shin-ichiro、Kojima Kazutoshi、Hijikata Yasuto、Ohshima Takeshi
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 2 Pages: 021004-021004
- DOI
  10.35848/1882-0786/abdc9e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Fluorescent Silicon Carbide Nanoparticles2021
- Author(s)
  de Vries Mitchell O.、Sato Shin‐ichiro、Ohshima Takeshi、Gibson Brant C.、Bluet Jean‐Marie、Castelletto Stefania、Johnson Brett C.、Reineck Philipp
- Journal Title
  
  Advanced Optical Materials
  
  Volume: 9 Issue: 20 Pages: 2100311-2100311
- DOI
  10.1002/adom.202100311
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Narrow inhomogeneous distribution of spin-active emitters in silicon carbide2021
- Author(s)
  Nagy Roland、Dasari Durga Bhaktavatsala Rao、Babin Charles、Liu Di、Vorobyov Vadim、Niethammer Matthias、Widmann Matthias、Linkewitz Tobias、Gediz Izel、Stohr Rainer、Weber Heiko B.、Ohshima Takeshi、Ghezellou Misagh、Son Nguyen Tien、Ul-Hassan Jawad、Kaiser Florian、Wrachtrup Jorg
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 14 Pages: 144003-144003
- DOI
  10.1063/5.0046563
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Microwave-Assisted Spectroscopy of Vacancy-Related Spin Centers in Hexagonal SiC2021
- Author(s)
  Shang Z.、Berencen Y.、Hollenbach M.、Zhou S.、Kraus H.、Ohshima T.、Astakhov G.V.
- Journal Title
  
  Physical Review Applied
  
  Volume: 15 Issue: 3
- DOI
  10.1103/physrevapplied.15.034059
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces2021
- Author(s)
  Hijikata Yasuto、Komori Shota、Otojima Shunsuke、Matsushita Yu-Ichiro、Ohshima Takeshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 20 Pages: 204005-204005
- DOI
  10.1063/5.0048772
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-20H00355
[Journal Article] Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations2021
- Author(s)
  Yamazaki Yuichi、Chiba Yoji、Sato Shin-ichiro、Makino Takahiro、Yamada Naoto、Satoh Takahiro、Kojima Kazutoshi、Hijikata Yasuto、Tsuchida Hidekazu、Hoshino Norihiro、Lee Sang-Yun、Ohshima Takeshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 2 Pages: 021106-021106
- DOI
  10.1063/5.0028318
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355, KAKENHI-PROJECT-20H02673
[Journal Article] Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices2021
- Author(s)
  Hoang Tuan Minh、Ishiwata Hitoshi、Masuyama Yuta、Yamazaki Yuichi、Kojima Kazutoshi、Lee Sang-Yun、Ohshima Takeshi、Iwasaki Takayuki、Hisamoto Digh、Hatano Mutsuko
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 4 Pages: 044001-044001
- DOI
  10.1063/5.0027603
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355, KAKENHI-PROJECT-20H02673
[Journal Article] Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors2020
- Author(s)
  Castelletto Stefania、Maksimovic Jovan、Katkus Tomas、Ohshima Takeshi、Johnson Brett C.、Juodkazis Saulius
- Journal Title
  
  Nanomaterials
  
  Volume: 11 Issue: 1 Pages: 72-72
- DOI
  10.3390/nano11010072
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Influence of Irradiation on Defect Spin Coherence in Silicon Carbide2020
- Author(s)
  C. Kasper, D. Klenkert, Z. Shang, D. Simin, A. Gottscholl, A. Sperlich, H. Kraus, C. Schneider, S. Zhou, M. Trupke, W. Kada, T. Ohshima, V. Dyakonov, G. V. Astakhov
- Journal Title
  
  Phys. Rev. Appl.
  
  Volume: 13 Issue: 4 Pages: 1-11
- DOI
  10.1103/physrevapplied.13.044054
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770
[Journal Article] Universal coherence protection in a solid-state spin qubit2020
- Author(s)
  Miao Kevin C.、Blanton Joseph P.、Anderson Christopher P.、Bourassa Alexandre、Crook Alexander L.、Wolfowicz Gary、Abe Hiroshi、Ohshima Takeshi、Awschalom David D.
- Journal Title
  
  Science
  
  Volume: 369 Issue: 6510 Pages: 1493-1497
- DOI
  10.1126/science.abc5186
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Entanglement and control of single nuclear spins in isotopically engineered silicon carbide2020
- Author(s)
  Bourassa Alexandre、Anderson Christopher P.、Miao Kevin C.、Onizhuk Mykyta、Ma He、Crook Alexander L.、Abe Hiroshi、Ul-Hassan Jawad、Ohshima Takeshi、Son Nguyen T.、Galli Giulia、Awschalom David D.
- Journal Title
  
  Nature Materials
  
  Volume: 19 Issue: 12 Pages: 1319-1325
- DOI
  10.1038/s41563-020-00802-6
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Journal Article] Electrical and optical control of single spins integrated in scalable semiconductor devices2019
- Author(s)
  C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. U. Hassan, N. T. Son, T. Ohshima, D. D. Awschalom
- Journal Title
  
  Science
  
  Volume: 366 Issue: 6470 Pages: 1225-1230
- DOI
  10.1126/science.aax9406
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770
[Journal Article] Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions2019
- Author(s)
  M. Niethammer, M. Widmann, T. Rendler, N. Morioka, Y-C. Chen, R. Stohr, J. U. Hassan, S. Onoda, T. Ohshima, S-Y. Lee, A. Mukherjee, J. Isoya, N. T. Son, Jorg Wrachtrup
- Journal Title
  
  Nat. Commun.
  
  Volume: 10 Issue: 1 Pages: 1-8
- DOI
  10.1038/s41467-019-13545-z
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770
[Journal Article] Identification of divacancy and silicon vacancy qubits in 6H-SiC2019
- Author(s)
  J. Davidsson, V. Ivady, R. Armiento, T. Ohshima, N. T. Son, A. Gali, I. A. Abrikosov
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 114 Issue: 11 Pages: 112107-112111
- DOI
  10.1063/1.5083031
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770
[Journal Article] Ligand hyperfine interactions at silicon vacancies in 4H-SiC2019
- Author(s)
  N. T. Son, P. Stenberg, V. Jokubavicius, T. Ohshima, J. U. Hassan, I. G Ivanov
- Journal Title
  
  J. Phys.: Condens. Matter
  
  Volume: 31 Issue: 19 Pages: 195501-195501
- DOI
  10.1088/1361-648x/ab072b
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure2019
- Author(s)
  Y. Matsushita, Y. Furukawa, Y. Hijikata, T. Ohshima
- Journal Title
  
  Applied Surface Science
  
  Volume: 464 Pages: 451-454
- DOI
  10.1016/j.apsusc.2018.09.072
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18H03873, KAKENHI-PROJECT-15H03967
[Journal Article] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2019
- Author(s)
  Tomoyasu Ishii, Shin-Ichiro Kuroki, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 613-616
- DOI
  10.4028/www.scientific.net/msf.963.613
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Devic2019
- Author(s)
  M. Widmann, M. Niethammer, D. Y. Fedyanin, I. A. Khramtsov, T. Rendler, I. D. Booker, J. U Hassan, N. Morioka, Y.-C. Chen, I. G. Ivanov, N. T. Son, T. Ohshima, M. Bockstedte, A. Gali, C. Bonato, S.-Y. Lee, J. Wrachtrup
- Journal Title
  
  Nano Lett.
  
  Volume: 19 Issue: 10 Pages: 7173-7180
- DOI
  10.1021/acs.nanolett.9b02774
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770
[Journal Article] Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties2019
- Author(s)
  S.-i. Sato, T. Narahara, Y. Abe, Y. Hijikata, T. Umeda, T. Ohshima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Issue: 8 Pages: 083105-083105
- DOI
  10.1063/1.5099327
- NAID
  120007132685
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC2019
- Author(s)
  N. T. Son, P. Stenberg, V. Jokubavicius, H. Abe, T. Ohshima, J. U. Hassan, I. G. Ivanov
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 114 Issue: 21 Pages: 212105-212105
- DOI
  10.1063/1.5098070
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770
[Journal Article] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2019
- Author(s)
  Jun Inoue, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takahiro Makino, Takeshi Ohshima, Mikael Ostling, Carl-Mikael Zetterling
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 837-840
- DOI
  10.4028/www.scientific.net/msf.963.837
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer2019
- Author(s)
  Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Tomonori Maeda, Takahiro Makino, Akinori Takeyama, Takeshi Ohshima and Shin-Ichiro Kuroki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 8 Pages: 081007-081007
- DOI
  10.7567/1347-4065/ab2dab
- NAID
  210000156569
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2019
- Author(s)
  Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Journal Title
  
  Materials Science Forum
  
  Volume: 963 Pages: 726-729
- DOI
  10.4028/www.scientific.net/msf.963.726
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing2019
- Author(s)
  Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Satoh, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 963 Pages: 709-713
- DOI
  10.4028/www.scientific.net/msf.963.709
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide2019
- Author(s)
  Nagy Roland、Niethammer Matthias、Widmann Matthias、Chen Yu-Chen、Udvarhelyi P?ter、Bonato Cristian、Hassan Jawad Ul、Karhu Robin、Ivanov Ivan G.、Son Nguyen Tien、Maze Jeronimo R.、Ohshima Takeshi、Soykal ?ney O.、Gali ?d?m、Lee Sang-Yun、Kaiser Florian、Wrachtrup J?rg
- Journal Title
  
  Nature Communications
  
  Volume: 10 Issue: 1
- DOI
  10.1038/s41467-019-09873-9
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Electrically driven optical interferometry with spins in silicon carbide2019
- Author(s)
  K. C. Miao, A. Bourassa, C. P. Anderson, S. J. Whiteley, A. L. Crook, S. L. Bayliss, G. Wolfowicz, G. Thiering, P. Udvarhelyi, V. Ivady, H. Abe, T. Ohshima, A. Gali, D. D. Awschalom
- Journal Title
  
  Sci. Adv.
  
  Volume: 5 Issue: 11 Pages: 1-7
- DOI
  10.1126/sciadv.aay0527
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770
[Journal Article] Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors2018
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 112 Issue: 3
- DOI
  10.1063/1.4994241
- NAID
  120007133812
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-17H02781
[Journal Article] Excitation properties of the divacancy in 4H-SiC2018
- Author(s)
  B. Magnusson, N. T. Son, A. Csore, A. Gallstrom, T. Ohshima, A. Gali, I. G. Ivanov
- Journal Title
  
  Phys. Rev. B
  
  Volume: 98 Issue: 19
- DOI
  10.1103/physrevb.98.195202
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC2018
- Author(s)
  V. Ivady, J. Davidsson, N. T. Son, T. Ohshima, I. A. Abrikosov, A. Gali
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 924 Pages: 895-900
- DOI
  10.4028/www.scientific.net/msf.924.895
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Various Single Photon Sources Observed in SiC pin Diodes2018
- Author(s)
  H. Tsunemi, T. Honda, T. Makino, S. Onoda, S.-I. Sato, Y. Hijikata, T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 924 Pages: 204-207
- DOI
  10.4028/www.scientific.net/msf.924.204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-15H03967
[Journal Article] Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals2018
- Author(s)
  Y. Hijikata, T. Horii, Y. Furukawa, Y. Matsushita, T. Ohshima
- Journal Title
  
  J. Phys. Commun.
  
  Volume: 2 Issue: 11 Pages: 111003-111003
- DOI
  10.1088/2399-6528/aaede4
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-15H03967
[Journal Article] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2018
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M.Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 971-974
- DOI
  10.4028/www.scientific.net/msf.924.971
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Creation of Silicon Vacancy in Silicon Carbide by Proton Beam Writing toward Quantum Sensing Applications2018
- Author(s)
  T. Ohshima, T. Satoh, H. Kraus, G. V. Astakhov, V. Dyakonov, P. G. Baranov
- Journal Title
  
  J. Phys. D: Appl. Phys.
  
  Volume: 51 Issue: 33 Pages: 333002-333002
- DOI
  10.1088/1361-6463/aad0ec
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission2018
- Author(s)
  M. Fischer, A. Sperlich, H. Kraus, T. Ohshima, G. V. Astakhov, V. Dyakonov
- Journal Title
  
  Phys. Rev. Appl.
  
  Volume: 9 Issue: 5
- DOI
  10.1103/physrevapplied.9.054006
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2018
- Author(s)
  J. Kajihara, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 924 Pages: 423-427
- DOI
  10.4028/www.scientific.net/msf.924.423
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Bright single photon sources in lateral silicon carbide light emitting diodes2018
- Author(s)
  M. Widmann, M. Niethammer, T. Makino, T. Rendler, S. Lasse, T. Ohshima, J. Ul Hassan, N. T. Son, S.-Y. Lee, J. Wrachtrup
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 112 Issue: 23
- DOI
  10.1063/1.5032291
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs2018
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, S. Onoda, M. Haruyama, W. Kada, O. Hanaizumi, R. Kosugi, S. Harada, T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 924 Pages: 281-284
- DOI
  10.4028/www.scientific.net/msf.924.281
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface2018
- Author(s)
  S.-i. Sato, T. Honda, T. Makino, Y. Hijikata, S.-Y. Lee, T. Ohshima
- Journal Title
  
  ACS Photonics
  
  Volume: 5 Issue: 8 Pages: 3159-3165
- DOI
  10.1021/acsphotonics.8b00375
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-15H03967
[Journal Article] Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide2018
- Author(s)
  R. Nagy, M. Widmann, M. Niethammer, D. B.R. Dasari, I. Gerhardt, O. O. Soykal, M. Radulaski, T. Ohshima, J. Vuckovic, N. T. Son, I. G. Ivanov, S. E. Economou, C. Bonato, S.-Y. Lee, J. Wrachtrup
- Journal Title
  
  Phys. Rev. Applied
  
  Volume: 9 Issue: 3
- DOI
  10.1103/physrevapplied.9.034022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing2018
- Author(s)
  Y. Yamazaki, Y. Chiba, T. Makino, S. -I. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S.-Y. Lee, T. Ohshima
- Journal Title
  
  J. Mater. Res.
  
  Volume: 33 Issue: 20 Pages: 3355-3361
- DOI
  10.1557/jmr.2018.302
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-15H03967
[Journal Article] Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide2017
- Author(s)
  H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
- Journal Title
  
  Nano Letters
  
  Volume: - Issue: 5 Pages: 2865-2870
- DOI
  10.1021/acs.nanolett.6b05395
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047, KAKENHI-PROJECT-16K13721, KAKENHI-PROJECT-15H03967
[Journal Article] Locking of Electron Spin Coherence above 20 ms in Natural Silicon Carbide2017
- Author(s)
  D. Simin, H. Kraus, A. Sperlich, T. Ohshima, G. V. Astakhov, V. Dyakonov
- Journal Title
  
  Phys. Rev. B
  
  Volume: 95 Issue: 16
- DOI
  10.1103/physrevb.95.161201
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Journal Article] Transient current induced in thin film diamonds by swift heavy ions2017
- Author(s)
  S.Sato, T.Makino, T.Ohshima, T.Kamiya, W.Kada, O.Hanaizumi, V.Grilj, N.Skukan, M.Pomorski, G.Vizkelethy
- Journal Title
  
  Diamond & Related Materials
  
  Volume: 75 Pages: 161-168
- DOI
  10.1016/j.diamond.2017.04.005
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249149
[Journal Article] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2017
- Author(s)
  S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Journal Title
  
  Mat. Sci. Forum
  
  Volume: 897 Pages: 669-672
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Journal Article] Creation and Functionalization of Defects in SiC by Proton Beam Writing2017
- Author(s)
  T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. V. Astakhov
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 897 Pages: 233-237
- DOI
  10.4028/www.scientific.net/msf.897.233
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047, KAKENHI-PROJECT-15H03967
[Journal Article] Stark tuning and electrical charge state control of single divacancies in silicon carbide2017
- Author(s)
  C. F. de las Casas, D. J. Christle, J. Ul Hassan, T. Ohshima, N. T. Son, D. D. Awschalom
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 111 Issue: 26
- DOI
  10.1063/1.5004174
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Scalable Quantum Photonics with Single Color Centers in Silicon Carbide2017
- Author(s)
  M. Radulaski, M. Widmann, M. Niethammer, J. L. Zhang, S.-Y. Lee, T. Rendler, K. G. Lagoudakis, N. T. Son, E. Janzeen, T. Ohshima, J. Wrachtrup, J. Vuckovic
- Journal Title
  
  Nano Letters
  
  Volume: 17 Issue: 3 Pages: 1782-1786
- DOI
  10.1021/acs.nanolett.6b05102
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Journal Article] Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide2017
- Author(s)
  V. Ivady, J. Davidsson, N. T. Son, T. Ohshima, I. A. Abrikosov, A. Gali
- Journal Title
  
  Phys. Rev. B
  
  Volume: 96 Issue: 16
- DOI
  10.1103/physrevb.96.161114
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Activation and Control of Visible Single Defects in 4H-, 6H-, and 3C-SiC by Oxidation2016
- Author(s)
  A. Lohrmann, S. Castelletto, J. R. Klein, T. Ohshima, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum and B. C. Johnson
- Journal Title
  
  Applied Physics Letter
  
  Volume: 108 Issue: 2
- DOI
  10.1063/1.4939906
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Journal Article] Charge multiplication effect in thin diamond films2016
- Author(s)
  50.N. Skukan, V. Grilj, I. Sudic;, M. Pomorski, W. Kada, T. Makino, Y. Kambayashi, Y. Andoh, S. Onoda, S. Sato, T. Ohshima, T. Kamiya and M. Jaksic;,
- Journal Title
  
  Applied Physics Letters
  
  Volume: 109 Issue: 4 Pages: 043502-043502
- DOI
  10.1063/1.4959863
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249149
[Journal Article] Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions2016
- Author(s)
  M. Niethammer, M. Widmann, S.-Y. Lee, P. Stenberg, O. Kordina, T. Ohshima, N. T. Son, E. Janzen, J. Wrachtrup
- Journal Title
  
  Phys. Rev. Appl.
  
  Volume: 6 Issue: 3 Pages: 034001-034001
- DOI
  10.1103/physrevapplied.6.034001
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Journal Article] Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy,2016
- Author(s)
  45.W. Kada, Y. Kambayashi, Y. Ando, S. Onoda, H. Umezawa, Y. Mokuno, S. Shikata, T. Makino, M. Koka, O. Hanaizumi, T. Kamiya, T. Ohshima
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  
  Volume: 372 Pages: 151-155
- DOI
  10.1016/j.nimb.2015.12.044
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249149
[Journal Article] The evaluation of radiation damage parameter for CVD diamond2016
- Author(s)
  44.V. Grilj, N. Skukan, M. Jaksic;, M. Pomorski, W. Kada, T. Kamiya, and T. Ohshima
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  
  Volume: 372 Pages: 161-164
- DOI
  10.1016/j.nimb.2015.12.046
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249149
[Journal Article] Coherent Control of Single Spins in Silicon Carbide at Room Temperature2015
- Author(s)
  MatthiasWidmann, Sang-Yun Lee, Torsten Rendler, Nguyen Tien Son, Helmut Fedder, Seoyoung Paik, Li-Ping Yang, Nan Zhao, Sen Yang, Ian Booker, Andrej Denisenko, Mohammad Jamali, S. Ali Momenzadeh, Ilja Gerhardt, Takeshi Ohshima, Adam Gali, Erik Janzen and Jorg Wrachtrup
- Journal Title
  
  Nature Materials
  
  Volume: 14 Issue: 2 Pages: 165-168
- DOI
  10.1038/nmat4145
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26286047
[Journal Article] X-Ray Characterization of Short Pulse Laser Illuminated Hydrogen Storae Alloys Having Very High Performance2015
- Author(s)
  Hiroyuki Daido, Hiroshi ABE, Takashi Shobu, Takuya Shimomura, Shinnosuke Tokuhira, Yusuke Takeyama, Takehiro Furuyama, Akihiko Nishimura Hirohisa Uchida and Takeshi Ohshima
- Journal Title
  
  Proceedings of SPIE 9589, X-Ray Lasers and Coherent X-Ray Sources: Development and Applications XI
  
  Volume: 9589 Pages: 95890K-95890K
- DOI
  10.1117/12.2186898
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26420891
[Journal Article] Isolated Electron Spins in Silicon Carbide with Millisecond Coherence Times2015
- Author(s)
  David J. Christle, Abram L. Falk, Paolo Andrich, Paul V. Klimov, Jawad Ul Hassan, Nguyen T. Son, Erik Janzen, Takeshi Ohshima and David D. Awschalom
- Journal Title
  
  Nature Materials
  
  Volume: 14 Issue: 2 Pages: 160-163
- DOI
  10.1038/nmat4144
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26286047
[Journal Article] Single-Photon Emitting Diode in Silicon Carbide2015
- Author(s)
  A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A. Gali, S. Prawer, J. C. McCallum and B. C. Johnson
- Journal Title
  
  Nature Communications
  
  Volume: 6 Issue: 1
- DOI
  10.1038/ncomms8783
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Journal Article] Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams2015
- Author(s)
  41.W. Kada, Y. Kambayashi, N. Iwamoto, S. Onoda, T. Makino, M. Koka, T. Kamiya, N.Hoshino, H. Tsuchida, K. Kojima, O. Hanaizumi, and T. Ohshima
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  
  Volume: 348 Pages: 240-245
- DOI
  10.1016/j.nimb.2014.12.054
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249149
[Journal Article] Surface Modification of Hydrogen Storage Alloy by Heavy Ion Beams with keV to MeV Irradiation Energies2015
- Author(s)
  Hiroshi ABE, Shinnosuke Tokuhira, Hirohisa Uchida and Takeshi Ohshima
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research Section B365 (2015) 214-217
  
  Volume: 365 Pages: 214-217
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26420891
[Journal Article] Charge Collection Characteristics of A Super-Thin Diamond Membrane Detector Measured With High-Energy Heavy Ions2014
- Author(s)
  N.Iwamoto, T.Makino, W.Kada, N.Skukan, M.Pomorski, V.Grilj, M.Jaksic, S.Onoda, T.Ohshima, T.Kamiya
- Journal Title
  
  IEEE TRANSACTIONS ON NUCLEAR SCIENCE
  
  Volume: 61 Issue: 6 Pages: 3732-3738
- DOI
  10.1109/tns.2014.2360937
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26249149
[Journal Article] A silicon Carbide Room-Temperature Single-Photon Source2014
- Author(s)
  S. Castelletto, B. C. Johnson, V. Ivády, N. Stavrias, T. Umeda, A. Gali, T. Ohshima
- Journal Title
  
  Nature Materials
  
  Volume: 13 Issue: 2 Pages: 151-156
- DOI
  10.1038/nmat3806
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24656025
[Journal Article] Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement2014
- Author(s)
  W.Kada, N,Iwamoto, T.Satoh, S.Onoda, V.Grilj, N.Skukan, M. Koka, T.Ohshima, M.Jaksic, T.Kamiya,
- Journal Title
  
  NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  
  Volume: 331 Pages: 113-116
- DOI
  10.1016/j.nimb.2013.11.040
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26249149
[Journal Article] Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC, MOS Capacitors2012
- Author(s)
  T. Makino, N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, S. Nozaki
- Journal Title
  
  Materials Science Forum
  
  Volume: 717-720 Pages: 469-472
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy : Their Impact on the Degraded Charge Collection Efficiency2012
- Author(s)
  N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida, S. Nozaki
- Journal Title
  
  Materials Science Forum
  
  Volume: 717-720 Pages: 267-270
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Fabrication of Single Photon Centres in Silicon Carbide2012
- Author(s)
  B. C. Johnson, S. Castelletto, T. Ohshima. T. Umeda
- Journal Title
  
  IEEE conference publication, Proceedings of 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
  
  Volume: 1 Pages: 217-218
- DOI
  10.1109/commad.2012.6472328
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10F00802, KAKENHI-PROJECT-24656025
[Journal Article] Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC p^+n Diode Irradiated With High-Energy Electrons2011
- Author(s)
  N.Iwamoto, A.Koizumi, S.Onoda, T.Makino, T.Ohshima, K.Kojima, S.Koike, K.Uchida, S.Nozaki
- Journal Title
  
  IEEE Transaction on Nuclear Science
  
  Volume: 58 Pages: 3328-3332
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-rays2011
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, S. Nozaki, K. Kojima
- Journal Title
  
  Materials Science Forum
  
  Volume: 679-680 Pages: 370-373
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] ingle-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC p^+n Diode Irradiated With High-Energy Electrons2011
- Author(s)
  N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida, and S. Nozaki
- Journal Title
  
  IEEE Transaction on Nuclear Science
  
  Volume: 58 Pages: 3328-3332
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal-Oxide-Semiconductor Capacitors2011
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, M. Deki, S. Nozaki
- Journal Title
  
  AIP conference proceedings 1336 Application of Accelerators in Research and Industry
  
  Pages: 660-664
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Enhanced Charge Collection in Drain Contact of 6H-SiC MOSFETs Induced by Heavy Ion Microbeam2010
- Author(s)
  S.Onoda, G.Vizkelethy, T.Makino, N.Iwamoto, K.Kojima, S.Nozaki, T.Ohshima
- Journal Title
  
  Proc.of 9th Internat.Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)
  
  Pages: 230-233
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Charge Collection Efficiency of 6H-SiC P^+N Diodes Degraded by Low-Energy Electron Irradiation2010
- Author(s)
  N.Iwamoto, S.Onoda, T.Ohshima, K.Kojima, A.Koizumi, K.Uchida, S.Nozaki
- Journal Title
  
  Materials Science Forum 645-648
  
  Pages: 921-924
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Change in Current Induced from Silicon Carbide Metal-Oxide-Semiconductor Capacitors by Oxygen Ions2010
- Author(s)
  T.Ohshima, N.Iwamoto, S.Onoda, T.Makino, M.Deki, S.Nozaki
- Journal Title
  
  Proc.of 9th Internat.Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)
  
  Pages: 85-91
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Enhanced Charge Collection in Drain Contact of 6H-SiC MOSFETs Induced by Heavy Ion Microbeam2010
- Author(s)
  S. Onoda, G. Vizkelethy, T. Makino, N. Iwamoto, K. Kojima, S. Nozaki, T. Ohshima
- Journal Title
  
  Proc. of 9th Internat. Workshop on Radiation Effects on Semiconductor Devices for Space Applications
  
  Pages: 230-233
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation2010
- Author(s)
  N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida, S. Nozaki
- Journal Title
  
  Materials Science Forum
  
  Volume: 645-648 Pages: 921-924
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Change in Current Induced from Silicon Carbide Metal. Oxide-Semiconductor Capacitors by Oxygen Ions2010
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, M. Deki, S. Nozaki
- Journal Title
  
  Proc. of 9th Internat. Workshop on Radiation Effects on Semiconductor Devices for Space Applications
  
  Pages: 85-91
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike2010
- Author(s)
  S. Onoda, T. Makino, N. Iwamoto, G. Vizkelethy, K. Kojima, S. Nozaki, T. Ohshima
- Journal Title
  
  IEEE Transactions on Nuclear Science
  
  Volume: 57 Pages: 3373-3379
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Transient Response to High Energy Heavy Ions in 6H-SiC n+p Diodes2009
- Author(s)
  S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1039-1042
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation2009
- Author(s)
  N. Iwamoto, S. Onoda, S. Hishiki, T. Ohshima, M. Murakami, I. Nakano, K. Kawano
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1043-1046
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices due to Radiations2009
- Author(s)
  S. Onoda, N. Iwamoto, T. Hirao, K. Kawano, K. Kojima, T. Ohshima
- Journal Title
  
  American Institute of Physics Conference Proceedings 1099
  
  Pages: 1010-1013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Transient Response to High Energy Heavy Ions in 6H-SiC n^+p Diodes2009
- Author(s)
  S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
- Journal Title
  
  Materials Science Forum 600-603
  
  Pages: 1039-1042
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV2009
- Author(s)
  S. Onoda, N. Iwamoto, M. Murakami, T. Ohshima, T. Hirao, K. Kojima, K. Kawano, I. Nakano
- Journal Title
  
  Materials Science Forum 615-617
  
  Pages: 861-864
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] NIEL Analysis of Charge Collection Efficiency in Silicon Carbide Diodes Damaged by Gamma-Rays, Electrons and Protons2008
- Author(s)
  T. Ohshima, S. Onoda, N. Iwamoto, K. Kojima, K. Kawano
- Journal Title
  
  Proc. the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications
  
  Pages: 175-178
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Charge Collection Efficiency of 6H-SiC Diodes Damaged by Electron Irradiation2007
- Author(s)
  N. Iwamoto, T. Ohshima, S. Onoda, S. Hishiki, M. Murakami, I. Nakano, K. Kawano
- Journal Title
  
  Proc. of the 26th Sympo. on Mater. Sci. and Engineer. Res. Center of Ion Beam Tech. Hosei Univ.
  
  Pages: 27-30
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions2007
- Author(s)
  S. Onoda, T. Ohshima, T. Hirao, K. Mishima, S. Hishiki, N. Iwamoto, K. Kawano
- Journal Title
  
  IEEE Transactions on Nuclear Science 54
  
  Pages: 2706-2713
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions2007
- Author(s)
  T. Ohshima, T. Satoh, M. Oikawa, S. Onoda, S. Hishiki, T. Hirao, T. Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I Nakano, G. Wagner, H. Itoh
- Journal Title
  
  Materials Science Forum 556-557
  
  Pages: 913-916
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Decrease in Ion Beam Induced Charge of 6H-SiC Diodes2007
- Author(s)
  S. Onoda, N. Iwamoto, T. Ohshima, T. Hirao, K. Kawano
- Journal Title
  
  Proc. of the 26th Sympo. on Mater. Sci. and Engineer. Res. Center of Ion Beam Tech. Hosei Univ.
  
  Pages: 35-40
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Decrease of Charge Collection due to Displacement Damage by Gamma Rays in a 6H-SiC Diode2007
- Author(s)
  S. Onoda, T. Ohshima, T. Hirao, K. Mishima, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
- Journal Title
  
  IEEE Transactions on Nuclear Science 54
  
  Pages: 1953-1960
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Structural Study on(Al) InGaP Single-Junction Solar Cell for Performance Improvement of Triple-Junction Solar Cells2007
- Author(s)
  C. Morioka, M. Imaizumi, H. Sugimoto, S. Sato, T. Ohshima and M. Tajima
- Journal Title
  
  Proc. 17th International Photovoltaic Science and Engineering Conference, Fukuoka, Japan
  
  Pages: 504-505
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16206002
[Journal Article] Degradation of Charge Collection Efficiency Obtained for 6H-SiC n^+p Diodes Irradiated with Gold Ions2007
- Author(s)
  T.Ohshima, T.Satoh, M.Oikawa, S.Onoda, S.Hishiki, T.Hirao, T.Kamiya, T.Yokoyama, A.Sakamoto, R.Tanaka, I Nakano, G.Wagner, H.Itoh
- Journal Title
  
  Materials Science Forum 556-557
  
  Pages: 913-916
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Observation of Charge Collection Efficiency of 6H-SiC n+p Diodes Irradiated with Au-Ions2006
- Author(s)
  N. Iwamoto, T. Ohshima, T. Satoh, M. Oikawa, S. Onoda, S. Hishiki, T. Hirao, T. Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, G. Wagner, H. Itoh, K. Kawano
- Journal Title
  
  Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
  
  Pages: 185-185
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Analysis of Transient Current in SiC Diodes Irradiated with MeV Ions2006
- Author(s)
  S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, K. Mishima, N. Iwamoto, T. Kamiya, K. Kawano
- Journal Title
  
  Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
  
  Pages: 115-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Journal Article] Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy : Their Impact on the Degraded Charge Collection Efficiency
- Author(s)
  N.Iwamoto, A.Koizumi, S.Onoda, T.Makino, T.Ohshima, K.Kojima, S.Koike, K.Uchida, S.Nozaki
- Journal Title
  
  Materials Science Forum
  
  Volume: (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS capacitors
- Author(s)
  T.Makino, N.Iwamoto, S.Onoda, T.Ohshima, K.Kojima, S.Nozaki
- Journal Title
  
  Materials Science Forum
  
  Volume: (印刷中)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360471
[Journal Article] Comparative Study of Transient Current Induced in SiC p+n and n+p Diodes by Heavy Ion Microbeams
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Kamiya, K. Kawano
- Journal Title
  
  Nucl. Inst. Meth. B (in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] 4H-SiC及びSiO2上Pt/Co強磁性薄膜の磁気異方性制御2024
- Author(s)
  六田大貴, 針井一哉, Qixian Liao, 丁浩, 好田誠, 土方泰斗, 大島武
- Organizer
  第71回応用物理学会春季学術講演会 (25a-12F-7)
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] 12C濃縮4H-SiC中に形成したシリコン空孔のODMR特性2024
- Author(s)
  山城宏育, 佐藤真一郎, 村田晃一, 花輪雅史, 張盛杰, 山﨑雄一, 土田秀一, 土方泰斗, 大島武
- Organizer
  第71回応用物理学会春季学術講演会 (23a-52A-7)
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] 4H-SiC及びSiO2上Pt/Co強磁性薄膜の磁気異方性制御2024
- Author(s)
  六田大貴, 針井一哉, Qixian Liao, 丁浩, 好田誠, 土方泰斗, 大島武
- Organizer
  第71回応用物理学会春季学術講演会 (25a-12F-7)
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] 12C濃縮4H-SiC中に形成したシリコン空孔のODMR特性2024
- Author(s)
  山城宏育, 佐藤真一郎, 村田晃一, 花輪雅史, 張盛杰, 山﨑雄一, 土田秀一, 土方泰斗, 大島武
- Organizer
  第71回応用物理学会春季学術講演会 (23a-52A-7)
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] 電子線照射による 4H-SiC 中窒素・空孔複合欠陥の高濃度形成2023
- Author(s)
  張啓航, 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 張盛杰, 土田秀一, 土方泰斗, 大島武
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] Creation of spin defects in silicon carbide and their applications for quantum sensing2023
- Author(s)
  Takeshi Ohshima
- Organizer
  International Workshop of Spin/Quantum Materials and Devices (IWSQMD)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] SiC CMOS Integrated Circuits and Image Sensors for Extreme Environment Applications2023
- Author(s)
  Shin-Ichiro Kuroki, Toya Kai, Masayuki Tsutsumi, Tatsuya Meguro, Vuong Van Cuong, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima
- Organizer
  7th IEEE Electron Devices Technology and Manufacturing (IEEE EDTM2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 電子線照射により形成した4H-SiC中シリコン空孔の荷電状態とドーピング濃度の関係2023
- Author(s)
  張盛杰, 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 張啓航, 土田秀一, 土方泰斗, 大島武
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] 炭化ケイ素中の量子欠陥形成と量子特性評価2023
- Author(s)
  大島武
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] 固体中スピン欠陥を活用した量子センシング2023
- Author(s)
  大島武
- Organizer
  国際ナノテクノロジー総合展・技術会議特別シンポジウム「ナノテクで加速する量子未来社会」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] 電子線照射による 4H-SiC 中窒素・空孔複合欠陥の高濃度形成2023
- Author(s)
  張啓航, 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 張盛杰, 土田秀一, 土方泰斗, 大島武
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] 電子線照射により形成した4H-SiC中シリコン空孔の荷電状態とドーピング濃度の関係2023
- Author(s)
  張盛杰, 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 張啓航, 土田秀一, 土方泰斗, 大島武
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] 電子線照射によって形成した4H-SiC中シリコン空孔の濃度定量2022
- Author(s)
  元木秀, 佐藤真一郎, 佐伯誠一, 増山雄太, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] Creation on Silicon Vacancy in Silicon Carbide and its Application for Quantum Sensing2022
- Author(s)
  T. Ohshima, Y. Yamazaki, T. Tanaka
- Organizer
  The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] Temperature sensitivity improvement of SiC-VSi-based quantum sensor by simultaneous-resonated optically detected magnetic resonance2022
- Author(s)
  Y. Yamazaki, Y. Masuyama, K. Kojima, T. Ohshima
- Organizer
  9th International Conference on Silicon Carbide and Related Materials (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] Bipolar Characteristics of Vanadium-doped 4H-SiC Semi-Insulating Layer for Well-less CMOS Circuits2022
- Author(s)
  Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 高エネルギー電子線照射による4H-SiC中シリコン空孔の高濃度形成2022
- Author(s)
  元木秀, 佐藤真一郎, 佐伯誠一，村田晃一，増山雄太, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] SiC半導体による極限環境エレクトロニクス構築2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  2022年電子情報通信学会総合大会シンポジウム「極限環境で動作する集積回路」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 高線量ガンマ線照射した 4H-SiC JFET のしきい値電圧安定性2022
- Author(s)
  武山昭憲, 牧野高紘, 田中保宣, 黒木伸一郎, 大島武
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 基底・励起準位同時共鳴を用いたシリコン空孔量子センサ温度計測高感度化2022
- Author(s)
  山﨑雄一, 増山雄太, 児島一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] SiC中のVSiによる同時共鳴法を用いた磁場・温度同時計測手法の最適化2022
- Author(s)
  田中友晃，山崎雄一，児島一聡，大島武
- Organizer
  応用物理学会先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] Impact of conductivity type of vanadium doped 4H-SiC epilayer on semi-insulating characteristics2022
- Author(s)
  Kazutoshi Kojima Shinichiro Sato, Takeshi Ohshima and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS UVイメージセンサ画素デバイスの200℃高温動作2022
- Author(s)
  堤将之, 目黒達也, 武山昭憲, 大島武, 田中保宣, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 炭化ケイ素（SiC）の量子技術応用の可能性－スピン欠陥形成と量子センシング応用－2022
- Author(s)
  大島武
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] Creation of Spin Defects in Silicon Carbide by Particle Irradiation for Quantum Applications2022
- Author(s)
  Takeshi Ohshima
- Organizer
  The 8th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] 基底・励起準位同時共鳴ODMRを用いたシリコン空孔量子センサ高感度温度計測2022
- Author(s)
  山﨑雄一, 増山雄太, 児島一聡, 大島武
- Organizer
  応用物理学会先進パワー半導体分科会第9回講演会
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] Coverage Enhancement of Si-SOI/4H-SiC Wafer Direct Bonding by SiO2 insertion2022
- Author(s)
  Kazuya Kawamura, Tatsuya Meguro, Masayuki Tsutsumi, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Generation of boron vacancy defects in hexagonal boron nitride by high temperature ion irradiation2022
- Author(s)
  T. Suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y.-I. Matsushita, Y. Nishiya, Y. Masuyama, Y. Hijikata, T Ohshima
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] 4H-SiC 半絶縁基板を用いた Well-less MOSFET の p/n channel 動作2022
- Author(s)
  甲斐陶弥、児島一聡、大島武、田中保宣、黒木伸一郎
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Generation of boron vacancy defects in hexagonal boron nitride by high temperature ion irradiation2022
- Author(s)
  T. Suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y.-I. Matsushita, Y. Nishiya, Y. Masuyama, Y. Hijikata, T Ohshima
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures2022
- Author(s)
  S. Motoki, S.-I. Sato, Y. Masuyama, Y. Yamazaki, S. Saiki, Y. Hijikata, T. Ohshima
- Organizer
  Conference on Defects in Solids for Quantum Technologies
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] Noise Margins and BTI Characteristics of 4H-SiC CMOS Circuits in High-Temperature Environment2022
- Author(s)
  Takuma Shima, Toya Kai, Kazutoshi Kojima, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2022 (ICSCRM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド極限環境用集積回路および画素デバイスの研究2022
- Author(s)
  黒木伸一郎, 志摩拓真, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武, 児島一聡, 田中保宣
- Organizer
  電気学会電子デバイス研究会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用（第2期）」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors2022
- Author(s)
  Kenta Nishigaito, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC CMOS UVイメージセンサ画素デバイスの200℃高温動作2022
- Author(s)
  堤将之、目黒達也、武山昭憲、大島武、田中保宣、黒木伸一郎
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 高エネルギー電子線照射による4H-SiC中シリコン空孔の高濃度形成2022
- Author(s)
  元木秀, 佐藤真一郎, 佐伯誠一，村田晃一，増山雄太, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures2022
- Author(s)
  S. Motoki, S.-I. Sato, Y. Masuyama, Y. Yamazaki, S. Saiki, Y. Hijikata, T. Ohshima
- Organizer
  Defects in solids for quantum technologies (DSQT)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] Output Characteristics of SOI-Si/4H-SiC Hybrid Pixel Device for Radiation Hardend CMOS Image Sensors2022
- Author(s)
  Tatsuya Meguro, Fumiaki Hasebe, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  European Conference on Silicon Carbide and Related Materials2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures2022
- Author(s)
  S. Motoki, S.-I. Sato, Y. Masuyama, Y. Yamazaki, S. Saiki, Y. Hijikata, T. Ohshima
- Organizer
  Defects in solids for quantum technologies (DSQT)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] Spin Defects in Silicon Carbide and their Applications for Quantum Technology2022
- Author(s)
  Takeshi Ohshima
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] 4H-SiC CMOS SRAM のノイズマージン評価2022
- Author(s)
  甲斐陶弥, 児島一聡, 大島武, 田中保宣, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第 9回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 高エネルギー電子線照射による4H-SiC中シリコン空孔の高濃度形成および磁気センシング感度評価2022
- Author(s)
  元木秀，佐藤真一郎, 佐伯誠一, 村田晃一, 増山雄太, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也，西垣内健汰，武山昭憲，牧野高紘，大島武，田中保宣
- Organizer
  応用物理学会・先進パワー半導体分科会第19回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] ワイドバンドギャップ半導体中の発光・スピン欠陥による量子センシング2021
- Author(s)
  大島武
- Organizer
  薄膜材料デバイス研究会第18回研究集会「結晶成長技術とデバイスの新展開」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] エピタキシャル成長による n/p ウェル構造を用いた 4H-SiC CMOS インバータの特性評価2021
- Author(s)
  志摩拓真, 甲斐陶弥, 児島一聡, 田中保宣, 大島武, 黒木伸一郎
- Organizer
  応用物理学会・先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 耐放射線性炭化ケイ素半導体デバイスの開発2021
- Author(s)
  大島武, 武山昭憲、牧野高紘、黒木伸一郎、田中保宣
- Organizer
  2021年第82回応用物理学会秋季学術講演会シンポジウム「福島第1原発廃炉と福島復興　－応用物理学会の会員として，私たちに何ができるか－」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] シリコンカーバイド（SiC）極限環境エレクトロニクスの研究開発：原子炉廃炉対応から医療応用まで2021
- Author(s)
  黒木伸一郎, 目黒達也, Vuong Van Cuong, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  文部科学省共同利用・共同研究拠点生体医歯工学共同研究拠点　令和2年度成果報告会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 炭化ケイ素中への単一光子源・スピン欠陥の形成と量子科学技術への応用2021
- Author(s)
  大島武
- Organizer
  2021年日本表面真空学会学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] エピタキシャル成長による4H-SiC CMOS Well形成2021
- Author(s)
  甲斐　陶弥 , 児島一聡, 志摩　拓真, 大島武, 田中保宣, 黒木　伸一郎
- Organizer
  応用物理学会・先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] SiC 耐放射線イメージセンサの研究開発2021
- Author(s)
  黒木伸一郎, 目黒達也, 西垣内健汰, 武山昭憲, 牧野高紘, 大島武,田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 19 回研究会　「ワイドバンドギャップ半導体を用いた極限環境エレクトロニクス」
- Invited
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 耐放射線イメージセンサに向けたSOI-Si/4H-SiC画素プロセス2020
- Author(s)
  目黒達也，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 4H-SiC 短チャネル n/p MOSFETs における閾値の評価2020
- Author(s)
  志摩拓真，前田智徳，石川誠治，瀬崎洋，牧野高紘, 大島武, 黒木伸一郎
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] ワイドバンドギャップ半導体の量子科学技術への展開2020
- Author(s)
  大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第7回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響2020
- Author(s)
  武山昭憲，清水奎吾, 牧野高紘, 山崎雄一, 大島武, 黒木伸一郎, 田中保宣
- Organizer
  公益社団法人応用物理学会先進パワー半導体分科会第 7回講演会
- Data Source
  KAKENHI-PROJECT-20H00252
[Presentation] 炭化ケイ素中のシリコン空孔を用いた量子センシング2020
- Author(s)
  山崎雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗,　児島一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第7回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-20H00355
[Presentation] 耐放射線UVイメージセンサのためのフル4H-SiC画素デバイス2019
- Author(s)
  西垣内健汰、目黒達也、武山昭憲、大島武、田中保宣、黒木伸一郎
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 同位体酸素を用いたSiC 表面に形成される単一光子源の構造推定2019
- Author(s)
  土方泰斗, 松下雄一郎，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC2019
- Author(s)
  T. Narahara, S.-i. Sato, K. Kojima, Y. Yamazaki, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles2019
- Author(s)
  S.-i. Sato, T. Narahara, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] ノーマリーオフ型 4H-SiC JFET のガンマ線耐性2019
- Author(s)
  武山昭憲，清水奎吾，牧野高紘，山﨑雄一，大島武，黒木伸一郎，田中保宣
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Creation of silicon vacancy in silicon carbide using proton beam writing techniques for quantum sensing2019
- Author(s)
  T. Ohshima
- Organizer
  Workshop on Ion beams for future technologies 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC デバイス内に作製したシリコン空孔の光・電気同時励起時における光学特性2019
- Author(s)
  山﨑雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響2019
- Author(s)
  楢原拓真, 佐藤真一郎, 児島一聡, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Optically detected magnetic resonance study of 3D arrayed silicon vacancies in SiC pn diodes2019
- Author(s)
  Y. Yamazaki, Y. Chiba, S.-I. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Room temperature electronic-controllable quantum devices using single-photon sources in SiC crystals2019
- Author(s)
  Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
- Organizer
  2nd The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響2019
- Author(s)
  楢原拓真, 佐藤真一郎, 児島一聡, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 同位体酸素を用いたSiC表面に形成される単一光子源の構造推定2019
- Author(s)
  土方泰斗，松下　雄一郎，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC デバイス内に作製したシリコン空孔の光・電気同時励起時における光学特性2019
- Author(s)
  山﨑雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Pixel Array Integration with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened image sensors2019
- Author(s)
  Tatsuya Meguro, Fumiaki Hasebe, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  The 4th International Symposium on Biomedical Engineering (ISBE2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC結晶中シリコン空孔の光検出磁気共鳴信号にアニール温度が及ぼす影響2019
- Author(s)
  千葉陽史, 山﨑雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Creation of silicon vacancy in silicon carbide using proton beam writing techniques for quantum sensing2019
- Author(s)
  T. Ohshima
- Organizer
  Workshop on Ion beams for future technologies 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC による耐放射線エレクトロニクス技術開発2019
- Author(s)
  田中保宣，清水奎吾，小野田忍，武山昭憲，牧野高紘，大島武，目黒達也，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles2019
- Author(s)
  S.-i. Sato, T. Narahara, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC結晶中シリコン空孔の光検出磁気共鳴信号にアニール温度が及ぼす影響2019
- Author(s)
  千葉陽史, 山﨑雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC MOSFETチャネルの単一光子源のゲート電圧制御22019
- Author(s)
  阿部裕太，梅田享英，岡本光央，原田信介，佐藤真一郎，山﨑雄一，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC結晶中シリコン空孔のODMR信号に熱処理温度が及ぼす影響2019
- Author(s)
  千葉陽史, 山﨑雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] γ線照射が炭化ケイ素表面発光中心の生成・発光特性に与える影響2019
- Author(s)
  山﨑雄一，常見大貴，佐藤真一郎, 土方泰斗，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Position-Selective Silicon Vacancy Formation in Silicon Carbide Devices using Proton Beam Writing2019
- Author(s)
  T. Ohshima, Y. Yamazaki, Y. Chiba, Y. Hijikata, K. Kojima, S.-Y. Lee, W. Kada
- Organizer
  Quantum 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 耐放射線イメージセンサに向けた SOI-Si/4H-SiC 画素集積化プロセス2019
- Author(s)
  目黒達也，長谷部史明，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC Pixel Device for UV Image Sensors2019
- Author(s)
  Kenta Nishigaito, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, Shin-Ichiro Kuroki
- Organizer
  The 4th International Symposium on Biomedical Engineering (ISBE2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Radiation hardness of 4H-SiC JFETs in MGy dose ranges,” The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)2019
- Author(s)
  A. Takeyama, K. Shimizu, T. Makino, Y. Yamazaki, S. Kuroki, Y. Tanaka, T. Ohshima
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 短チャネル SiC nMOSFET の温度特性評価2019
- Author(s)
  石井友康，瀬崎洋，石川誠治，前田智徳，牧野高紘，大島武, 黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係2019
- Author(s)
  楢原拓真，佐藤真一郎，児島一聡，山﨑雄一, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiCデバイス内の3次元配列シリコン空孔を用いた光検出磁場共鳴測定2019
- Author(s)
  山﨑雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Position-Selective Silicon Vacancy Formation in Silicon Carbide Devices using Proton Beam Writing2019
- Author(s)
  T. Ohshima, Y. Yamazaki, Y. Chiba, Y. Hijikata, K. Kojima, S.-Y. Lee, W. Kada
- Organizer
  Quantum 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係2019
- Author(s)
  楢原拓真，佐藤真一郎，児島一聡，山﨑雄一, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Structure identification and characterization of the single-photon sources formed on the surface of silicon carbide crystal2019
- Author(s)
  Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
- Organizer
  2019 Energy Materials and Nanotechnology on Epitaxy (EMN Meeting on Epitaxy 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Pixel Array Integration with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened image sensors2019
- Author(s)
  Tatsuya Meguro, Fumiaki Hasebe, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Optically detected magnetic resonance study of 3D arrayed silicon vacancies in SiC pn diodes2019
- Author(s)
  Y. Yamazaki, Y. Chiba, S.-I. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] The effect of γ-ray irradiation on optical properties of single photon sources in 4H- SiC MOSFET2019
- Author(s)
  Y. Abe, T. Umeda, M. Okamoto, S. Harada, Y. Yamazaki, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成におけるイオンビーム照射の影響2019
- Author(s)
  楢原拓真, 佐藤真一郎, 土方泰斗, 大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC-NMOSFETs におけるガンマ線誘起移動度増加現象とその増加機構2019
- Author(s)
  村岡幸輔，瀬崎洋，石川誠治，前田知徳，牧野高紘，大島武，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Below-Gap励起光を用いたFET構造4H-SiCの欠陥準位の検出2019
- Author(s)
  小野寺奎, 鎌田憲彦, 土方泰斗, 武山昭憲, 大島武, 吉江徹
- Organizer
  第80回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC2019
- Author(s)
  T. Narahara, S.-i. Sato, K. Kojima, Y. Yamazaki, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Creation of nitrogen-vacancy centers in SiC by ion irradiation2019
- Author(s)
  T. Ohshima, S.-i. Sato, T. Narahara, Y. Yamazaki, Y. Abe, T. Umeda, Y. Hijikata
- Organizer
  30th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment2019
- Author(s)
  Y. Chiba, Y. Yamazaki, S.i. Sato, T. Makino, N. Yamada, T. Satoh, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 耐放射線 UV イメージセンサのためのフル 4H-SiC 画素デバイス2019
- Author(s)
  西垣内健汰，目黒達也，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment2019
- Author(s)
  Y. Chiba, Y. Yamazaki, S.i. Sato, T. Makino, N. Yamada, T. Satoh, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC Pixel Device with UV Photodiode and MOSFETs for Radiation-Hardened UV Image Sensors2019
- Author(s)
  Kenta Nishigaito, Tatsuya Meguro, Akinori Takeyama, Takeshi Ohshima, Yasunori Tanaka and Shin-Ichiro Kuroki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiCデバイス内の3次元配列シリコン空孔を用いた光検出磁場共鳴測定2019
- Author(s)
  山﨑雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] ノーマリーオフ型4H-SiC JFETのガンマ線照射効果2019
- Author(s)
  武山昭憲、清水奎吾、牧野高紘、山﨑雄一、大島武、黒木伸一郎、田中保宣
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 耐放射線イメージセンサのための 4H-SiC/SOI 基板貼り合わせ技術2019
- Author(s)
  長谷部史明，目黒達也，武山昭憲，大島武，田中保宣，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC結晶中シリコン空孔のODMR信号に熱処理温度が及ぼす影響2019
- Author(s)
  千葉陽史, 山﨑雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 耐放射線イメージセンサに向けたSOI-Si/4H-SiC画素集積化プロセス2019
- Author(s)
  目黒達也、長谷部史明、武山昭憲、大島武、田中保宣、黒木伸一郎
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Creation of nitrogen-vacancy centers in SiC by ion irradiation2019
- Author(s)
  T. Ohshima, S.-i. Sato, T. Narahara, Y. Yamazaki, Y. Abe, T. Umeda, Y. Hijikata
- Organizer
  30th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] プロトンビーム描画を用いてSiCデバイス中に作製したシリコン空孔のODMR測定2018
- Author(s)
  千葉陽史，山﨑雄一，牧野高紘，佐藤真一郎，山田尚人,　佐藤隆博, 児島一聡, 土方泰斗，大島武
- Organizer
  2018年第79回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Position-selective introduction of electrically excitable color centers in SiC pn junction diode by proton beam writing2018
- Author(s)
  Y. Yamazaki, Y. Chiba, T. Makino, S. -i. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S. Y. Lee, T. Ohshima
- Organizer
  16th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] プロトンビーム描画を用いたSiC pinダイオード中への発光中心の形成2018
- Author(s)
  千葉陽史, 常見大貴, 本多智也, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs2018
- Author(s)
  T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Radiation Hardened Silicon Carbide Electronics2018
- Author(s)
  K. Muraoka, S. Ishikawa, H. Sezaki, T. Maeda, T. Makino, T. Ohshima, S.-I. Kuroki
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] プロトンビーム描画により形成されたSiC pnダイオード中シリコン空孔のODMR測定2018
- Author(s)
  千葉陽史，山﨑雄一，牧野高紘，佐藤真一郎，山田尚人,　佐藤隆博，加田渉，児島一聡，土方泰斗，大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Magnetic Field Sensing with Silicon Vacancy in 4H-SiC Under Ambient Conditions2018
- Author(s)
  Hoang Minh Tuan, Takeshi Ohshima, Yuta Masuyama, Takayuki Iwasaki, Digh Hisamoto, Mutsuko Hatano
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Quantum Sensing in 4H-SiC Power Devices2018
- Author(s)
  Hoang Minh Tuan, Takeshi Ohshima, Makoto Nakajima, Kosuke Mizuno, Yuta Masuyama, Takayuki Iwasaki, Digh Hisamoto, Mutsuko Hatano
- Organizer
  2018 MRS Fall Meeting and Exhibit, Materials Research Society
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Direct Bonding of 4H-SiC and SOI Wafers for Radiation-Hardened Image Sensors2018
- Author(s)
  Fumiaki Hasebe, Tatsuya Meguro, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiCエピ層中の積層欠陥近傍における単一光子源の発光効率向上2018
- Author(s)
  赤堀周平、古川頼誉、松下雄一郎、大島武、土方泰斗
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Creation of electrically controllable radiation centers in SiC using proton beam writing2018
- Author(s)
  Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters2018
- Author(s)
  J. Inoue, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T Ohshima, M. Ostling, and C-M. Zetterling
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer2018
- Author(s)
  Y. Hijikata, Y. Furukawa, Y. -i. Matsushita, T. Ohshima
- Organizer
  2018 E-MRS Spring meeting and Exhibit
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer2018
- Author(s)
  Y. Hijikata, Y. Furukawa, Y.-i. Matsushita, and T. Ohshima
- Organizer
  European Materials Research Society (E-MRS) 2018 Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Short-channel 4H-SiC trench MOSFETs for harsh environment electronics2018
- Author(s)
  T. Ishii, S.-I. Kuroki, H. Sezaki, S. Ishikawa, T. Maeda, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  Fukushima Research Conference“Radiation Hardness and Smartness in Remote Technology for Nuclear Decommissioning” Organized by CLADS/JAEA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] プロトンビーム描画プロセスがSiC pnダイオード中に導入したシリコン空孔の光学特性に与える影響2018
- Author(s)
  山﨑雄一，千葉陽史，牧野高紘,　佐藤真一郎，山田尚人, 佐藤隆博, 土方泰斗，児島一聡,　 S. -Y. Lee, 大島武
- Organizer
  2018年第79回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] プロトンビーム描画により形成したシリコン空孔の光学特性劣化要因に関する研究2018
- Author(s)
  山﨑雄一，千葉陽史，牧野高紘, 佐藤真一郎，山田尚人, 佐藤隆博, 加田渉, 土方泰斗，児島一聡, S. -Y. Lee, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC酸化によるアモルファス構造が表面単一光子光源に与える影響の理論的分析2018
- Author(s)
  古川頼誉, 土方泰斗, 大島武, 松下雄一郎
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] a面およびm面4H-SiC MOSFETにおける単一光子源の探索2018
- Author(s)
  阿部裕太，梅田享英，原田信介，佐藤真一郎，山﨑雄一，大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Creation of silicon vacancy in silicon carbide device by proton beam writing toward quantum applications2018
- Author(s)
  Takeshi Ohshima, Yuichi Yamazaki, Yuji Chiba, Naoto Yamada, Shin-ichiro Sato, Takahiro Satoh, Yasuto Hijikata, Sang-Yun Lee, Kazutoshi Kojima
- Organizer
  25th International Conference on Application of Accelerators in Research and Industry (CAARI2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC Trench MOSFETs による短チャネル効果の抑制効果2018
- Author(s)
  石井友康、黒木伸一郎、瀬崎洋、石川誠治、前田智徳、牧野高紘、大島武、Mikael Ostling 、Carl-Mikael Zetterling
- Organizer
  2018年第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC表面に形成される単一光子源の酸化膜厚依存性2018
- Author(s)
  常見大貴，佐藤真一郎，山﨑雄一，牧野高紘，土方泰斗，大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC表面に形成される単一光子源の酸化膜厚依存性2018
- Author(s)
  常見大貴，佐藤真一郎，山﨑雄一，牧野高紘，土方泰斗，大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Effects of High Gamma-Ray Radiation on 3C-SiC nMOSFETs2018
- Author(s)
  Shin-Ichiro Kuroki, Kohei Nagano, Tatsuya Meguro, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, and Yasunori Tanaka
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC p+nn+ダイオード中の単一光子源の発光特性に関する考察2018
- Author(s)
  常見大貴, 佐藤真一郎, 山﨑雄一, 牧野高紘, 土方泰斗, 大島武
- Organizer
  2018年第79回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Near Infrared Photoluminescence from Nitrogen-Vacancy Centers in Silicon Carbide2018
- Author(s)
  S.-I. Sato, Y. Abe, T. Umeda, T. Ohshima
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成と発光特性2018
- Author(s)
  楢原拓真, 佐藤真一郎, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC MOSFETチャネルの単一光子源の偏光角度依存性2017
- Author(s)
  阿部裕太、岡本光央、小野田忍、大島武、春山盛善、加田渉、花泉修、小杉亮治、原田信介、梅田享英
- Organizer
  2017年　第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 4H-SiC 中の積層欠陥が単一光子光源の発光波長に及ぼす影響の理論的分析2017
- Author(s)
  古川頼誉，土方泰斗，大島武，松下雄一郎
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Radiation Response of Silicon Carbide Devices - Degradation and Functionalization -2017
- Author(s)
  T. Ohshima
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC MOSFETチャネルの単一光子源のゲート電圧制御2017
- Author(s)
  梅田亨英, 阿部裕太, 岡本光央, 原田信介, 春山盛善, 加田渉, 花泉修, 小野田忍, 大島武
- Organizer
  2017年第78回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] NbNiシリサイドS/D 3C-SiC nMOSFETsと高ガンマ線照射特性2017
- Author(s)
  永野耕平、目黒達也、武山昭憲、牧野高紘、大島武、田中保宣、黒木伸一郎
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] SiC pinダイオード中の発光中心の観察2017
- Author(s)
  常見大貴、本多智也、牧野高紘、小野田忍、佐藤真一郎、土方泰斗、大島武
- Organizer
  2017年　第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜、神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Various single photon sources observed in SiC pin diodes2017
- Author(s)
  H. Tsunemi, T. Honda, T. Makino, S. Onoda, S-I. Sato, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Low-parasitic-capacitance self-aligned 4H-SiC nMOSFETs for harsh environment electronics2017
- Author(s)
  T. Kurose, S.-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts2017
- Author(s)
  J. Kajihara, S-I. Kuroki, S. Ishikawa, T. Maeda, H. Sezaki, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
- Organizer
  The International Conference on Silicon Carbide and Related Materials 2017 (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] 高周波CMOSインバータに向けた4H-SiCトレンチpMOSFETsの研究2017
- Author(s)
  井上純、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  2018年第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Enhanced single photon emission near stacking fault in 4H-SiC epilayer2017
- Author(s)
  Y. Hijikata, S. Akahori, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiCエピ層における積層欠陥近傍の単一光子源の発光特性2017
- Author(s)
  赤堀周平、古川頼誉、松下雄一郎、大島武、土方泰斗
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 極限環境エレクトロニクスのための4H-SiC nMOSFETs セルフアラインプロセス2017
- Author(s)
  黒瀬達也、黒木伸一郎、石川誠治、前田知徳、瀬崎洋、牧野高紘、大島武、Mikael Ostling、Carl-Mikael Zetterling
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] バイアス印加によるSiCダイオード中の発光中心の発光強度変化2017
- Author(s)
  本多智也, 常見大貴, 小野田忍, 佐藤真一郎, 牧野高紘, 土方泰斗, 大島武
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Ba導入nMOSFETsに対するBTS試験およびガンマ線照射2017
- Author(s)
  村岡幸輔，瀬崎洋，石川誠治，前田知徳，牧野高紘，大島武，黒木伸一郎
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Observation of Single Photon Sources in Silicon Carbide PiN Diodes2017
- Author(s)
  T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S. Sato, S. Onoda, Y. Hijikata, B. C. Johnson, J. R. Klein, A. Lohrmann, J. C. McCaiium
- Organizer
  International Union of Materials Research Societies, The 15th International Conference on Advanced Materials (IUMRS-ICAM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC pMOSFETsの高温特性及びガンマ線曝露効果2017
- Author(s)
  梶原純, 黒木伸一郎, 瀬崎洋, 石川誠治，前田知徳, 牧野高紘, 大島武, Mikael Ostling, and Carl-Mikael Zetterling
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Research on 400°C Thermal Stability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications2017
- Author(s)
  Vuong Van Cuong, Milantha De Silva, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Yasunori Tanaka, and Shin-Ichiro Kuroki
- Organizer
  応用物理学会先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H03253
[Presentation] Oxidation-process dependence of Single photon sources embedded in 4H-SiC MOSFETs2017
- Author(s)
  Y. Abe, M. Okamoto, S. Onoda, T. Ohshima, M. Haruyama, W. Kada, O. Hanaizumi, R. Kosugi, S. Harada, Y. Kagoyama, T. Umeda
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Functionalization of Silicon Carbide by Particle Irradiation toward Quantum Devices2017
- Author(s)
  T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S. Sato, S. Onoda, Y. Hijikata
- Organizer
  2017 MRS Fall Meeting and Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] ダイヤモンドの高速重イオン誘起過渡電流測定とポーラリゼーション効果2017
- Author(s)
  佐藤真一郎 , 牧野高紘 , 大島武 , Vizkelethy Gyorgy , 神谷富裕
- Organizer
  第６４回応用物理春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] SiC p+nn+ダイオード表面に形成される単一光子源の発光特性2017
- Author(s)
  常見大貴, 本多智也, 佐藤真一郎, 小野田忍, 牧野高紘, 土方泰斗, 大島武
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC p+nn+ダイオードに形成される単一光子源の発光スペクトル2017
- Author(s)
  常見大貴，本多智也，牧野高紘，小野田忍，佐藤真一郎，土方泰斗，大島武
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Coherent defect engineering with varying irradiation methods2017
- Author(s)
  C. Kasper, D. Simin, H. Kraus, W. Kada, T. Ohshima, A. Sperlich, C. Salter, M. Trupke, V. Dyakonov, G. V. Astakhov
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC p+nn+ダイオード中の発光中心のバイアス電圧による発光強度変化2017
- Author(s)
  本多智也, 常見大貴, 児島一聡, 佐藤真一郎, 牧野高紘, 小野田忍, 土方泰斗, 大島武
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC MOSFETチャネル中の単一光子源に対する水素の影響2017
- Author(s)
  阿部裕太, 岡本光央, 小野田忍, 大島武, 春山盛善, 加田渉, 花泉修, 原田信介, 鹿児山陽平, 梅田亨英
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Controlled 3D Placement of Vacancy Spins for Quantum Applications in Silicon Carbide2017
- Author(s)
  H. Kraus, D. Simin, C. Kasper, W. Kada, Y. Hijikata, C. Cochrane, T. Ohshima, V. Dyakonov, G. V. Astakhov
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Creation of Single Photon Sources in Wide Bandgap Semiconductors by Ion Irradiation2016
- Author(s)
  T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson3, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
- Organizer
  第26回　日本MRS年次大会
- Place of Presentation
  横浜市開港記念会館　他、神奈川県横浜市
- Year and Date
  2016-12-19
- Invited
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 4H-SiC MOSFETにおける単一発光欠陥の界面酸化プロセス依存性の共焦点顕微鏡評価2016
- Author(s)
  阿部裕太、梅田享英、岡本光央、小杉亮治、原田信介、波多野睦子、岩崎孝之、小野田忍、大島武、春山盛善、加田渉、花泉修
- Organizer
  2016年　第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] プロトンビームライティングによるSiC中へのシリコン空孔の形成2016
- Author(s)
  本多智也、Kraus Hannes、加田渉、小野田忍、春山盛善、佐藤隆博、江夏昌志、神谷富裕、川端駿介、三浦健太、花泉修、土方泰斗、大島武
- Organizer
  応用物理学会先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場、茨城県つくば市
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 3C-SiC中の表面に形成される単一発光源の発光特性と表面処理の関係2016
- Author(s)
  本多智也、小野田忍、土方泰斗、大島武
- Organizer
  2016年　第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Visible Range Photoluminescence from Single Photon Sources in 3C, 4H and 6H Silicon Carbide2016
- Author(s)
  A. Lohrmann, S. Castelletto, J. Klein, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum, T. Ohshima, and B. C. Johnson
- Organizer
  International Conference on Nanoscience and Nanotechnology 2016
- Place of Presentation
  National Convention Center (Canberra, Australia)
- Year and Date
  2016-02-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Creation of Single Photon Emitters in Silicon Carbide using Particle Beam Irradiation2016
- Author(s)
  T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
- Organizer
  20th International Conference on Ion Beam Modification of Materials (IBMM2016)
- Place of Presentation
  Wellington, New Zealand
- Year and Date
  2016-10-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Transient Current Induced in Thin Film Diamonds by Swift Heavy Ions2016
- Author(s)
  S-I. Sato, T. Makino, T. Ohshima, T. Kamiya, W. Kada, V. Grilj, N. Skukan, M. Jaksic, M. Pomorski, G. Vizkelethy
- Organizer
  27th International Conference on Diamond and Carbon Materials
- Place of Presentation
  Le Corum, Montpellier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] Creation and Functionalization of Defects in SiC by Irradiation and Thermal Treatment2016
- Author(s)
  T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
- Organizer
  11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-25
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Development of radiation detector based on CVD diamond membrane with embedded living-cell cultivation environment,2016
- Author(s)
  2.W. Kada, M. Sakai, M. Pomorski, N. Skukan, T. Makino, M. Jaksic;, S. Onoda, T. Ohshima,T. Kamiya, and O. Hanaizumi,
- Organizer
  The 12th International Workshop on Ionizing Radiation Monitoring(IWIRM)
- Place of Presentation
  大洗パークホテル
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] Charge State Switching of Single Silicon Vacancies in SiC2016
- Author(s)
  M. Widmann, M. Niethammer, S.-Y. Lee, I. Booker, T. Ohshima, A. Gali, N. T. Son, E. Janzen, J. Wrachtrup
- Organizer
  11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 次世代高機能デバイスを目指し原子のスピンと光を操る2016
- Author(s)
  大島　武
- Organizer
  第6回CSJ化学フェスタ2016
- Place of Presentation
  タワーホール船堀、東京都江戸川区
- Year and Date
  2016-11-14
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Coherence Properties of the Silicon Vacancy in SiC: from Ensemble to Single Defects2016
- Author(s)
  D.Simin, H. Kraus, A. Sperlich, M. Trupke, T. Ohshima, G. V. Astakhov, V. Dyakonov
- Organizer
  11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Vector Magnetic Field Sensing using Defect Spins in 4H-SiC2016
- Author(s)
  M. Niethammer, M. Widmann, S.-Y. Lee, P. Neumann, P. Stenberg, H. Pedersen, O. Kordina, T. Ohshima, N. T. Son, E. Janzen, J. Wrachtrup
- Organizer
  11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Excitation Properties of the Divacancy in 4H and 3C SiC2016
- Author(s)
  I. G. Ivanov, N. T. Son, T. Ohshima, E. Janzen
- Organizer
  11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
- Place of Presentation
  Halkidiki, Greece
- Year and Date
  2016-09-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 4H-SiC MOSFETにおける単一発光欠陥の酸化膜界面依存性の共焦点顕微鏡評価2016
- Author(s)
  阿部裕太、岡本光央、小杉亮治、原田信介、波多野睦子、岩崎孝之、小野田忍、春山盛善、加田渉、花泉修、大島武、梅田享英
- Organizer
  応用物理学会先進パワー半導体分科会第3回講演会
- Place of Presentation
  つくば国際会議場、茨城県つくば市
- Year and Date
  2016-11-08
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 4H-SiC MOSFET中の単一表面欠陥の共焦点顕微鏡観察2016
- Author(s)
  梅田享英，阿部裕太，Y.-W. Zhu，岡本光央，小杉亮治，原田信介，春山盛善，牧野高紘，小野田忍，大島武
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Investigation of Deep Levels in Diamond based Radiation Detector by Transient Charge Spectroscopy with Focused Heavy Ion Microbeam2015
- Author(s)
  Y. Ando, Y. Kambayashi, W. Kada, S. Onoda, T. Makino, S. Sato, H. Umezawa, Y. Mokuno, S. Shikata, O. Hanaizumi, T. Kamiya and T. Ohshima
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM2015)
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] Surface Modification Effects on Hydrogen Absorpton Property of a Hydrogen Storage Alloy by Short Pulse Laser Irradiation2015
- Author(s)
  Hiroshi Abe, Takuya Shimomura, Shinnosuke Tokuhira, Yukihiro Shimada, Yusuke Takeyama, Takehiro Furuyama, Akihiro Nishimura, Hirohisa Uchida, Hiroyuki Daido and Takeshi Ohshima
- Organizer
  The 7th International Congress on Laser Advanced Materials Processing
- Place of Presentation
  KITAKYUSHU INTERNATIONAL CONFERENCE CENTER(Kitakyushu-shi, Fukuoka)
- Year and Date
  2015-05-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420891
[Presentation] X-Ray Characterization of Short Pulse Laser Illuminated Hydrogen Storage Alloys Having Very High Performance2015
- Author(s)
  Hiroyuki Daido, Hiroshi Abe, Takashi Shobu, Takuya Shimomura, Shinnosuke Tokuhira, Yusuke Takeyama, Takehiro Furuyama, Akihiro Nishimura, Hirohisa Uchida and Takeshi Ohshima
- Organizer
  SPIE Optical Engineering +Applications Conferences
- Place of Presentation
  San Diego, California (USA)
- Year and Date
  2015-08-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26420891
[Presentation] Study of diamond membrane detector aiming at highly-efficient and position-sensitive particle detection for ion beam applications2015
- Author(s)
  T. Kamiya, W. Kada, Y. Kambayashi, T. Makino, S. Onoda, T. Ohshima, N.Iwamoto, S. Shikata, Y. Mokuno, H. Umezawa, M. Pomorski, V. Grilj, N.Skukan, and M. Jakšić
- Organizer
  22nd International Conference on Ion Beam Analysis(IBA2015)
- Place of Presentation
  Opatija, Croatia
- Year and Date
  2015-06-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] Single-Photon Emitting Diode in 4H- and 6H-SiC2015
- Author(s)
  A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A.Gali3, S.Prawer, J.C. McCallum, and B.C. Johnson
- Organizer
  International Conference on Silicon Carbide and Related Materials 2015
- Place of Presentation
  Giardini Naxos (Sicily, Italy)
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices2015
- Author(s)
  S. Castelletto, A. Lohrmann, A.F.M. Almutairi, D.W.M. Lau, M. Negri, M. Bosi, B. C. Johnson, B.C. Gibson, J. C. McCallum, A. Gali, and T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2015
- Place of Presentation
  Giardini Naxos (Sicily, Italy)
- Year and Date
  2015-10-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] 高温熱処理したSiC中に存在する単一光子源2015
- Author(s)
  大島　武，A. Lohrmann，B. C. Johnson，S. Castelletto，小野田忍，牧野高紘，武山昭憲，J. Klein，M. Bosi，M. Negri，D. W. M. Lau，B. C. Gibson，S. Prawer，J. C. McCallum
- Organizer
  応用物理学会先進パワー半導体分科会講演会第2回講演会
- Place of Presentation
  大阪国際交流センター（大阪府大阪市）
- Year and Date
  2015-10-09
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Optically Active Defect Centres in Silicon Carbide Devices2014
- Author(s)
  B.C. Johnson, N. Iwamoto, S. Castelletto, S. Onoda, T. Ohshima, T. Karle and J. C. McCallum
- Organizer
  2014 Internat. Conf. on Nanoscience and Nanotechnology
- Place of Presentation
  Adelaide Convention Centre (Adelaide, Australia)
- Data Source
  KAKENHI-PROJECT-24656025
[Presentation] Optically Active Defect Centres in Silicon Carbide Devices2014
- Author(s)
  B.C. Johnson, N. Iwamoto, S. Castelletto, S. Onoda, T. Ohshima, T. Karle and J. C. McCallum
- Organizer
  2014 International Conference on Nanoscience and Nanotechnology
- Place of Presentation
  Adelaide Convention Centre (Adelaide, Australia)
- Data Source
  KAKENHI-PROJECT-24656025
[Presentation] Fabrication of Single Photon Centres in Silicon Carbide2012
- Author(s)
  B. C. Johnson, S. Castelletto, T. Ohshima and T. Umeda
- Organizer
  2012 Conference on Optoelectronic and Microelectronic Materials and Devices
- Place of Presentation
  University of Melbourne (Melbourne, Australia)
- Data Source
  KAKENHI-PROJECT-24656025
[Presentation] Fabrication of Single Photon Centres in Silicon Carbide2012
- Author(s)
  B. C. Johnson, S. Castelletto, T. Ohshima and T. Umeda
- Organizer
  2012 Conference on Optoelectronic and Microelectronic Materials and Devices
- Place of Presentation
  Univ. of Melbourne (Melbourne, Australia)
- Data Source
  KAKENHI-PROJECT-24656025
[Presentation] Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy : Their Impact on the Degraded Charge Collection Efficiency2011
- Author(s)
  N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida, S. Nozaki
- Organizer
  Internat. Conf. on Silicon Carbide and Related Materials 2011(ICSCRM2011)
- Place of Presentation
  Cleveland(USA)
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS capacitors2011
- Author(s)
  T.Makino, N.Iwamoto, S.Onoda, T.Ohshima, K.Kojima, S.Nozaki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM2011)
- Place of Presentation
  Renaissance Cleveland Hotel, Cleveland (USA)
- Year and Date
  2011-09-14
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS capacitors2011
- Author(s)
  T. Makino, N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, S. Nozaki
- Organizer
  Internat. Conf. on Silicon Carbide and Related Materials 2011(ICSCRM2011)
- Place of Presentation
  Cleveland(USA)
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy : Their Impact on the Degraded Charge Collection Efficiency2011
- Author(s)
  N.Iwamoto, A.Koizumi, S.Onoda, T.Makino, T.Ohshima, K.Kojima, S.Koike, K.Uchida, S.Nozaki
- Organizer
  International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM2011)
- Place of Presentation
  Renaissance Cleveland Hotel, Cleveland (USA)
- Year and Date
  2011-09-13
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Enhanced Charge Collection in Drain Contact of 6H-SiC MOSFETs Induced by Heavy Ion Microbeam2010
- Author(s)
  S. Onoda, G. Vizkelethy, T. Makino, N. Iwamoto, K. Kojima, S. Nozaki, T. Ohshima
- Organizer
  9th Internat. Workshop on Radiation Effects on Semiconductor Devices for Space Applications(9thRASEDA)
- Place of Presentation
  Takasaki(Japan)
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Refreshable Decrease in Peak Height of Ion Beam Induced Transient Current from Silicon Carbide Metal-Oxide-Semiconductor Capacitors2010
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, M. Deki, S. Nozaki
- Organizer
  21st International Conference on the Application of Accelerators in Research and Industry(CAARI)
- Place of Presentation
  Fort Worth(USA)
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Refreshable Decrease in Peak Height of Ion Beam Induced Transient Current from Silicon Carbide Metal-Oxide-Semiconductor Capacitors2010
- Author(s)
  T.Ohshima, N.Iwamoto, S.Onoda, T.Makino, M.Deki, S.Nozaki
- Organizer
  21st International Conference on the Application of Accelerators in Research and Industry (CAARI)
- Place of Presentation
  Worthington Renaissance, Fort Worth, Texas (USA)
- Year and Date
  2010-08-10
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-rays2010
- Author(s)
  T.Ohshima, N.Iwamoto, S.Onoda, T.Makino, S.Nozaki, K.Kojima
- Organizer
  The 8th European Conference on Silicon Carbide and Related Materials (ECSCRM)
- Place of Presentation
  Sundvolden Conf.Center, Oslo (Norway)
- Year and Date
  2010-08-31
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Change in Current Induced from Silicon Carbide Metal. Oxide-Semiconductor Capacitors by Oxygen Ions2010
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, M. Deki, S. Nozaki
- Organizer
  9th Internat. Workshop on Radiation Effects on Semiconductor Devices for Space Applications(9thRASEDA)
- Place of Presentation
  Takasaki(Japan)
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Enhanced Charge Collection in Drain Contact of 6H-SiC MOSFETs Induced by Heavy Ion Microbeam2010
- Author(s)
  S.Onoda, G.Vizkelethy, T.Makino, N.Iwamoto, K.Kojima, S.Nozaki, T.Ohshima
- Organizer
  9th Internat.Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)
- Place of Presentation
  Takasaki City Gallery, Takasaki (Japan)
- Year and Date
  2010-10-27
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Change in Current Induced from Silicon Carbide Metal-Oxide-Semiconductor Capacitors by Oxygen Ions2010
- Author(s)
  T.Ohshima, N.Iwamoto, S.Onoda, T.Makino, M.Deki, S.Nozaki
- Organizer
  9th Internat.Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)
- Place of Presentation
  Takasaki City Gallery, Takasaki (Japan)
- Year and Date
  2010-10-28
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike2010
- Author(s)
  S. Onoda, T. Makino, N. Iwamoto, G. Vizkelethy, K. Kojima, S. Nozaki, T. Ohshima
- Organizer
  IEEE Nuclear and Space Radiation Effects Conference(NSREC)
- Place of Presentation
  Denver(USA)
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-rays2010
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, S. Nozaki, K. Kojima
- Organizer
  The 8th European Conference on Silicon Carbide and Related Materials(ECSCRM)
- Place of Presentation
  Oslo(Norway)
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike2010
- Author(s)
  S.Onoda, T.Makino, N.Iwamoto, G.Vizkelethy, K.Kojima, S.Nozaki, T.Ohshima
- Organizer
  IEEE Nuclear and Space Radiation Effects Conference (NSREC)
- Place of Presentation
  Sheraton, Denver, Colorado (USA)
- Year and Date
  2010-07-21
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Charge Collection Efficiency of 6H-SiC P+N Diodes Degraded by Low-Energy Electron Irradiation2009
- Author(s)
  N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida, and S. Nozaki
- Organizer
  The 13th International Conference on Silicon Carbide and Related Materials 2009(ICSCRM2009)
- Place of Presentation
  Nuremberg(Germany)
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Charge Collection Efficiency of 6H-SiC P^+N Diodes Degraded by Low-Energy Electron Irradiation2009
- Author(s)
  N.Iwamoto, S.Onoda, T.Ohshima, K.Kojima, A.Koizumi, K.Uchida, S.Nozaki
- Organizer
  The 13^<th> International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM2009)
- Place of Presentation
  Nuremberg(Germany)
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-21360471
[Presentation] Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices due to Radiations2008
- Author(s)
  S. Onoda, N. Iwamoto, T. Hirao, K. Kawano, K. Kojima, T. Ohshima
- Organizer
  20th International Conference on the Application of Accelerators in Research and Industry (CAARI)
- Place of Presentation
  Fort Worth(USA)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Comparative Study of Transient Current Induced in SiC p^+n and n^+p Diodes by Heavy Ion Microbeams2008
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Kamiya, K. Kawano
- Organizer
  11th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA)
- Place of Presentation
  Debrecen (Hungary)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV2008
- Author(s)
  S. Onoda, N. Iwamoto, M. Murakami, T. Ohshima, T. Hirao, K. Kojima, K. Kawano, I. Nakano
- Organizer
  7th European Conference on Silicon Carbide and Related Materials (ECSCRM)
- Place of Presentation
  Barcelona (Spain)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] NIEL Analysis of Charge Collection Efficiency in Silicon Carbide Diodes Damaged by Gamma-Rays, Electrons and Protons2008
- Author(s)
  T. Ohshima, S. Onoda, N. Iwamoto, K. Kojima, K. Kawano
- Organizer
  The 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)
- Place of Presentation
  Tsukuba (Japan)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] 数百MeV 級高エネルギー重イオンによる6H-SiCダイオードの電荷収集効率の測定2008
- Author(s)
  小野田忍、大島武、岩本直也、平尾敏雄、児島一聡、河野勝泰
- Organizer
  008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井(日本)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Comparative Study of Transient Current Induced in SiC p+n and n+p Diodes by Heavy Ion Microbeams2008
- Author(s)
  T. Ohshima, N. Iwamoto, S. Onoda, T. Kamiya, K. Kawano
- Organizer
  11th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA)
- Place of Presentation
  Debrecen(Hungary)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV2008
- Author(s)
  S. Onoda, N. Iwamoto, M. Murakami, T. Ohshima, T. Hirao, K. Kojima, K. Kawano, I. Nakano
- Organizer
  7th European Conference on Silicon Carbide and Related Materials (ECSCRM)
- Place of Presentation
  Barcelona(Spain)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices due to Radiations2008
- Author(s)
  S. Onoda, N. Iwamoto, T. Hirao, K. Kawano, K. Kojima, T. Ohshima
- Organizer
  20th International Conference on the Application of Accelerators in Research and Industry (CAARI)
- Place of Presentation
  Fort Worth (USA)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] 数百MeV級高エネルギー重イオンによる6H-SiCダイオードの電荷収集効率の測定2008
- Author(s)
  小野田忍, 大島武, 岩本直也, 平尾敏雄, 児島一聡, 河野勝泰
- Organizer
  2008年秋季第69回応用物理学会学術講演会
- Place of Presentation
  春日井(日本)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] 高エネルギー重イオンによるTIBIC測定技術の開発II2007
- Author(s)
  小野田忍、平尾敏雄、菱木繁臣、大島武
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道(日本)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] 電子線照射により損傷を導入した6H-SiCダイオードの電荷収集効率2007
- Author(s)
  N. Iwamoto, T. Ohshima, S. Onoda, S. Hishiki, M. Murakami, I. Nakano, K. Kawano
- Organizer
  第26回法政大学イオンビーム工学研究所シンポジウム
- Place of Presentation
  東小金井(日本)
- Year and Date
  2007-12-13
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Transient Response to High Energy Heavy Ions in 6H-SiC n+p diodes2007
- Author(s)
  S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu (Japan)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] 6H-SiCダイオードにおけるイオンビーム誘起電荷量の低下2007
- Author(s)
  小野田忍, 岩本直也, 大島武, 平尾敏雄,河野勝泰
- Organizer
  第26回法政大学イオンビーム工学研究所シンポジウム
- Place of Presentation
  東小金井(日本)
- Year and Date
  2007-12-13
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation2007
- Author(s)
  N. Iwamoto, S. Onoda, S. Hishiki, T. Ohshima, M. Murakami, I. Nakano, K. Kawano
- Organizer
  Int. Conf. on Silicon Carbide and Related Materials 2007
- Place of Presentation
  Otsu (Japan)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] 電子線照射された6H-SiC pnダイオードの電荷収集効率2007
- Author(s)
  岩本直也、小野田忍、菱木繁臣、大島武、村上允、中野逸夫、河野勝泰
- Organizer
  2007年(平成19年)秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道(日本)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diodes2007
- Author(s)
  S. Onoda, T. Ohshima, T. Hirao, K. Mishima, S. Hishiki, N. Iwamoto, K. Kojima, K. Kawano
- Organizer
  2007 IEEE Nuclear and Space Radiation Effects Conference
- Place of Presentation
  Hawaii (USA)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Observation of Charge Collection Efficiency of 6H-SiC n+p Diodes Irradiated with Au-Ions2006
- Author(s)
  N. Iwamoto, T. Ohshima, T. Satoh, M. Oikawa, S. Onoda, S. Hishiki, T. Hirao, T. Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, G. Wagner, H. Itoh, K. Kawano
- Organizer
  7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
- Place of Presentation
  Takasaki (Japan)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Analysis of Transient Current in SiC Diodes Irradiated with MeV Ions2006
- Author(s)
  S. Onoda, T. Ohshima, T. Hirao, S. Hishiki, K. Mishima, N. Iwamoto, T. Kamiya, K. Kawano
- Organizer
  7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
- Place of Presentation
  Takasaki(Japan)
- Data Source
  KAKENHI-PROJECT-18360458
[Presentation] Transmission diamond membrane detector and vacuum window for external microbeams
- Author(s)
  N.SKUKAN, W.KADA, N. IWAMOTO, T.KAMIYA,M. Jakšić, T.OHSHIMA, V.GRILJ, M.POMORSKI,
- Organizer
  14th International Conference on Nuclear Microprobe Technology and Applications
- Place of Presentation
  イタリア、パドバ、パドバ大学及びサンガエターノ文化センター
- Year and Date
  2014-07-06 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] Investigation of Deep Levels in Silicon Carbide using Ion-Induced Charge Transient Spectroscopy
- Author(s)
  W.KADA, S. ONODA, N.IWAMOTO, N.HOSHINO, H.TSUCHIDA, T.MAKINO, Y.KANBAYASHI, O.HANAIZUMI, M. KOKA,T. KAMIYA, T.OHSHIMA,
- Organizer
  14th International Conference on Nuclear Microprobe Technology and Applications
- Place of Presentation
  イタリア、パドバ、パドバ大学及びサンガエターノ文化センター
- Year and Date
  2014-07-06 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] Development of Diagnostic Method for Deep Levels in Semiconductors using Charge Induced by Heavy Ion
- Author(s)
  T.OHSHIMA, N. IWAMOTO, M.KOKA,S.ONODA, T. MAKINO, T. KAMIYA, W.KADA, Y.KANBAYASHI, N. HOSHINO, H.TSUCHIDA, K. KOJIMA,
- Organizer
  14th International Conference on Nuclear Microprobe Technology and Applications
- Place of Presentation
  イタリア、パドバ、パドバ大学及びサンガエターノ文化センター
- Year and Date
  2014-07-06 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] Optically Active Defects in Silicon Carbide
- Author(s)
  B. C. Johnson, Alex Lohrmann, H. Bowers, J. C. McCallum and Takeshi Ohshima
- Organizer
  Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2014)
- Place of Presentation
  The University of Western Australia (Perth, Australia)
- Year and Date
  2014-12-14 – 2014-12-17
- Data Source
  KAKENHI-PROJECT-26286047
[Presentation] Development of single ion detection technique for microbeam applications
- Author(s)
  Tomihiro Kamiya, Takahiro Satoh, Masashi Koka, Shinobu Onoda, Takeshi Ohshima, Takahiro Makino, Wataru Kada, Veljko Grilj,
- Organizer
  8th International Symposium on BioPIXE
- Place of Presentation
  クロアチア、ブレッド、ホテルゴルフ
- Year and Date
  2014-09-14 – 2014-09-19
- Invited
- Data Source
  KAKENHI-PROJECT-26249149
[Presentation] SiC中の単一発光源となる欠陥の探索
- Author(s)
  大島武，小野田忍，牧野高紘，岩本直也，B. C. Johnson，A. Lohrmann，T. Karle，J. C. McCallum，S. Castelletto，梅田享英，佐藤嘉洋，朱煜偉，V. Ivády，A. Gali，春山盛善，加田渉，花泉修
- Organizer
  2014年　第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス（北海道・札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26286047

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Ohshima Takeshi 大島 武

OHSHIMA Takeshi 大島 武

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Quantum state control with advanced optical technique for spin defects in silicon carbidePrincipal Investigator

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Quantum state measurements of single photon sources in silicon carbide devicesPrincipal Investigator

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Control of Photons and Spins of High-Brightness Single Photon Center in Silicon CarbidePrincipal Investigator

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Controlling of Single Photon Source in Silicon CarbidePrincipal Investigator

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Mechanism of the Destruction of Oxide on Silicon Carbide due to ChargeInduced by Ion BeamsPrincipal Investigator

Ohshima Takeshi 大島武

OHSHIMA Takeshi 大島武