Honda Yoshio 本田善央

… Alternative Names

HONDA Yoshio 本田善央

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Researcher Number	60362274
Other IDs
Affiliation (Current)	2025: 名古屋大学, 未来材料・システム研究所, 教授
Affiliation (based on the past Project Information) *help	2023 – 2025: 名古屋大学, 未来材料・システム研究所, 教授 2015 – 2024: 名古屋大学, 未来材料・システム研究所, 准教授 2015: 名古屋大学, 未来材料システム研究所, 准教授 2014: 名古屋大学, 大学院工学研究科, 准教授 2013 – 2014: 名古屋大学, 工学(系)研究科(研究院), 准教授 … More 2013 – 2014: 名古屋大学, 工学研究科, 准教授 2012: 名古屋大学, 大学院・工学研究科, 助教 2011 – 2012: 名古屋大学, 工学(系)研究科(研究院), 助教 2010 – 2012: Nagoya University, 工学研究科, 助教 2007 – 2010: Nagoya University, 大学院・工学研究科, 助教 2006: 名古屋大学, 大学院工学研究科, 助手 2004 – 2005: 名古屋大学, 大学院・工学研究科, 助手 2003 – 2004: NAGOYA UNIVERSITY, Graduate School of Engineering, Research Associate, 工学研究科, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Basic Section 30010:Crystal engineering-related / Medium-sized Section 21:Electrical and electronic engineering and related fields / Microdevices/Nanodevices / Applied materials science/Crystal engineering / Science and Engineering Except Principal Investigator Applied materials science/Crystal engineering / Medium-sized Section 14:Plasma science and related fields / Medium-sized Section 30:Applied physics and engineering and related fields … More / Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related / Basic Section 80040:Quantum beam science-related / General applied physics / Science and Engineering / Electronic materials/Electric materials / Engineering / Science and Engineering Less
Keywords	Principal Investigator GaN / InGaN / Si基板 / MOVPE / 半極性 / 半極性・非極性 / 選択成長 / HVPE / HVPE法 / バンドエンジニアリング … More / 電子デバイス応用 / AlInGaN / 分極ドーピング / バンドオフセット制御 / HBT / 4元混晶 / SJダイオード / Mgのメモリー効果 / Mgの偏析 / 高速エピタキシャル成長 / パワーデバイス / SJ / SJ構造 / Mgドーピング / pn接合 / 窒化物半導体 / レーザー構造 / 加圧MOVPE / レーザー / 半極性面 / レーザ / Si / LED / 双晶 / STEM / フォトルミネッセンス / ナノワイヤ / 量子細線 / 半導体物性 / 半導体超微細化 / 結晶成長 / MBE / 誘導放出 / 光学特性 / 無極性 / 選択成長法 / AlN / GaNバルク単結晶 / GaNバルク結晶 … More Except Principal Investigator 窒化物半導体 / 結晶成長 / GaN / 半導体検出器 / BGaN / III族窒化物半導体 / 中性子検出 / ナノワイヤ / シリコン基板 / 選択成長 / MOVPE / 窒化ガリウム / エピタキシャル成長 / イメージングセンサー / III族窒化物 / エピタキシャル / 半導体 / 超格子 / 太陽電池 / LED / 格子欠陥 / InGaN / 光導波路 / 面間拡散 / ファセット成長 / 不純物ドーピング / 国際共同研究 / デバイスプロセス / フォトミキシング / トランジスタ / 真空デバイス / 光電変換 / THz級電磁波 / 疑似直接検出 / イメージセンサー / トリハライド気相成長 / 転位 / 中性子検出器 / ガリウムヒ素半導体 / 動態観測 / 損傷敏感試料 / 電子顕微鏡 / 半導体フォトカソード / AlGaAs半導体 / 窒化ガリウム半導体 / パルス電子ビーム / 負電子親和力表面 / 電子ビーム / フォトカソード / 先端機能デバイス / 放射線 / α線飛程 / 中性子検出半導体 / 中性子半導体検出器 / 光物性 / Ｘ線 / 結晶工学 / 半導体レーザ / 量子構造 / 発光素子 / 量子閉じ込め / ナノ材料 / 不純物 / 半導体発光デバイス / 量子効果 / 特異構造 / SiC / 半導体発光材料 / 微細構造評価 / 光学特性 / ポーラス結晶 / ナノ構造 / 半導体レーザー / 量子殻 / Quantum dot / HVPE / Surface diffusion / Growth on facets / Selective growth / Hetero-epitaxy / 異種基板 / 緩衝層 / 三族窒化物 / 伝導性制御 / 量子細線 / ダブルヘテロ構造 / 量子ドット / HVPE法 / MOVPE法 / 表面拡散 / 選択成長法 / ヘテロエピタキシ / 電子線励起電流 / 電子線励起深紫外レーザ / ソーラーブラインド紫外線検出器 / バルクAlN / ナノカーボン電極 / 分極半導体 / グラフェン / カーボンナノチューブ / 低加速電圧SEM / 分極電荷エンジニアリング / 電子線ホログラフィ / バルクAlN基板 / 深紫外発光素子 / 深紫外 / 分極ドーピング / 熱処理 / ナノカーボン / 結晶成長その場観察 / AlGaN / AlN / 電気・電子材料 / ピエゾ電界 / トランスポート / 結晶欠陥 / 分極電荷 / ｐｎ接合 / ヘテロ構造 / 電界効果 / 炭素ドーピング / インパクトイオン化 / 黄色帯発光 / 格子空孔 / 分極電界 / ビルトイン電界効果 / 内部量子効率 / PA MBE / 窒素ラジカル / PAMBE / FTIR評価 / TEM観察 / PL / TEM / 疑似格子整合 / MOVPE成長 / シリコンホトニクス / 遠赤外吸収スペクトル / 透過電子顕微鏡観察 / 有機金属気相成長 / 熱力学 / 圧力印加MOVPE / 可視長波長LED / 量子効率 / 青色LED / 緑色LED / 加圧MOVPE / 圧力印加有機金属化合物気相成長法 / 可視長波長 LED / 電子線ホログラフィー / 界面構造 / Si基板 / 時間分解分光 / 光デバイス / ナノヘテロ構造 / ナノへテロ構造 Less

全窒化ガリウムパワー統合プラットフォームの開発に関する研究Principal Investigator
- Principal Investigator
  
  本田善央
- Project Period (FY)
  2025 – 2026
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Nagoya University
Fabrication of composition-controlled InGaN alloy thick films by controlling precursor molecules based on thermodynamics
- Principal Investigator
  
  村上尚
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related
- Research Institution
  Tokyo University of Agriculture and Technology
真空光トランジスタの創成と超高周波電磁波発生
- Principal Investigator
  
  加藤和利
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Kyushu University
Development of ultra-high resolution neutron imaging by quasi-direct detection using BGaN detector
- Principal Investigator
  
  中野貴之
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 14:Plasma science and related fields
- Research Institution
  Shizuoka University
Hetero-bipolar transistors with quaternary mixed AlGaInN polarized doping layersPrincipal Investigator
- Principal Investigator
  
  本田善央
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Nagoya University
Functional Extension of Nitride Semiconductors by Epitaxial Integration of Novel Materials
- Principal Investigator
  
  小林篤
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Fund for the Promotion of Joint International Research (International Collaborative Research)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Tokyo University of Science
High speed growth of pn junction by HVPE for fabrication of SJ diodPrincipal Investigator
- Principal Investigator
  
  Honda Yoshio
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples
- Principal Investigator
  
  Nishitani Tomohiro
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 14:Plasma science and related fields
- Research Institution
  Nagoya University
Development of thermal neutron imaging sensor using BGaN semiconductor detector
- Principal Investigator
  
  Nakano Takayuki
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 80040:Quantum beam science-related
- Research Institution
  Shizuoka University
Creation of a multi-dimensional and scale singularity structure in crystals and understanding of its mechanism
- Principal Investigator
  
  Kamiyama Satoshi
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Meijo University
Development of BGaN semiconductor devices for neutron semiconductor detector
- Principal Investigator
  
  Nakano Takayuki
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  General applied physics
- Research Institution
  Shizuoka University
Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Nagoya University
A high efficiency III nitride solar cell with graded composition top layer
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Aichi Institute of Technology
LD fabrication on semipolar GaN/Si by induced pressure InGaN growth and strain controlPrincipal Investigator
- Principal Investigator
  
  HONDA YOSHIO
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Development of bridged nitride semiconductor nanowire LED on Si substratePrincipal Investigator
- Principal Investigator
  
  HONDA Yoshio
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Nagoya University
Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2011
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Growth of high-quality thick InGaN by raised-pressure MOVPE
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Growth of high quality GaN on an Si substrate
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Aichi Institute of Technology
Optical property improvement of the semipolar GaN on Si by the reduction of stacking faults or point defects.Principal Investigator
- Principal Investigator
  
  HONDA Yoshio
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長Principal Investigator
- Principal Investigator
  
  本田善央
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substrate
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2004 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Si基板上A1Nテンプレートを用いたHVPE法による厚膜GaNバルク結晶の作製Principal Investigator
- Principal Investigator
  
  本田善央
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATE
- Principal Investigator
  
  SAWAKI Nobuhiko
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY

[Journal Article] Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping2024
- Author(s)
  Kumabe Takeru、Yoshikawa Akira、Kawasaki Seiya、Kushimoto Maki、Honda Yoshio、Arai Manabu、Suda Jun、Amano Hiroshi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 71 Issue: 5 Pages: 3396-3402
- DOI
  10.1109/ted.2024.3367314
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22KJ1532, KAKENHI-PROJECT-23K26559
[Journal Article] Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy2024
- Author(s)
  Hamasaki Kansuke、Ohnishi Kazuki、Nitta Shugo、Fujimoto Naoki、Watanabe Hirotaka、Honda Yoshio、Amano Hiroshi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 628 Pages: 127529-127529
- DOI
  10.1016/j.jcrysgro.2023.127529
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K13672, KAKENHI-PROJECT-22K18808
[Journal Article] Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector2024
- Author(s)
  Hisaya Nakagawa, Kosuke Hayashi, Atsuya Miyazawa, Yoshio Honda, Hiroshi Amano, Toru Aoki, and Takayuki Nakano
- Journal Title
  
  Sensors and Materials
  
  Volume: 36 Issue: 1 Pages: 169
- DOI
  10.18494/SAM4647
- ISSN
  0914-4935, 2435-0869
- Year and Date
  2024-01-26
- Language
  English
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23H00099
[Journal Article] Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering2023
- Author(s)
  Atsushi Kobayashi, Yoshio Honda, Takuya Maeda, Tomoya Okuda, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 1 Pages: 011002-011002
- DOI
  10.35848/1882-0786/ad120b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KK0094, KAKENHI-PROJECT-23K26557
[Journal Article] Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN2023
- Author(s)
  Kumabe Takeru、Kawasaki Seiya、Watanabe Hirotaka、Honda Yoshio、Amano Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 122 Issue: 25 Pages: 252107-252107
- DOI
  10.1063/5.0155363
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1532, KAKENHI-PROJECT-23K26559
[Journal Article] Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN2023
- Author(s)
  Kumabe Takeru、Kawasaki Seiya、Watanabe Hirotaka、Honda Yoshio、Amano Hiroshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 123 Issue: 25 Pages: 252101-252101
- DOI
  10.1063/5.0180062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1532, KAKENHI-PROJECT-23K26559
[Journal Article] Effective neutron detection using vertical-type BGaN diodes2021
- Author(s)
  Nakano Takayuki、Mochizuki Ken、Arikawa Takuya、Nakagawa Hisaya、Usami Shigeyoshi、Honda Yoshio、Amano Hiroshi、Vogt Adrian、Sch?tt Sebastian、Fiederle Michael、Kojima Kazunobu、Chichibu Shigefusa F.、Inoue Yoku、Aoki Toru
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 130 Issue: 12 Pages: 124501-124501
- DOI
  10.1063/5.0051053
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H04394
[Journal Article] AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency2021
- Author(s)
  Morita Iori、Ishikawa Fumitaro、Honda Anna、Sato Daiki、Koizumi Atsushi、Nishitani Tomohiro、Tabuchi Masao
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBK02-SBBK02
- DOI
  10.35848/1347-4065/abd6e0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00666
[Journal Article] Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication2021
- Author(s)
  Hidehiro Yasuda, Tomohiro Nishitani, Shuhei Ichikawa, Shuhei Hatanaka, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Quantum Beam Science
  
  Volume: 5 Issue: 1 Pages: 5-5
- DOI
  10.3390/qubs5010005
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K15174, KAKENHI-PROJECT-17H06154, KAKENHI-PROJECT-19H00666
[Journal Article] Multiple electron beam generation from InGaN photocathode2021
- Author(s)
  Sato Daiki、Shikano Haruka、Koizumi Atsushi、Nishitani Tomohiro、Honda Yoshio、Amano Hiroshi
- Journal Title
  
  Journal of Vacuum Science & Technology B
  
  Volume: 39 Issue: 6 Pages: 062209-062209
- DOI
  10.1116/6.0001272
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00666
[Journal Article] Recovery of quantum efficiency on Cs/O-activated GaN and GaAs photocathodes by thermal annealing in vacuum2020
- Author(s)
  Sato Daiki、Nishitani Tomohiro、Honda Yoshio、Amano Hiroshi
- Journal Title
  
  Journal of Vacuum Science & Technology B
  
  Volume: 38 Issue: 1 Pages: 012603-012603
- DOI
  10.1116/1.5120417
- NAID
  120006957719
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00666
[Journal Article] Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode2020
- Author(s)
  Sato Daiki、Honda Anna、Koizumi Atsushi、Nishitani Tomohiro、Honda Yoshio、Amano Hiroshi
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 223 Pages: 111229-111229
- DOI
  10.1016/j.mee.2020.111229
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00666
[Journal Article] Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy2016
- Author(s)
  Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146522
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Highly elongated vertical GaN nanorod arrays on Si substrates with AlN seed layer by pulsed-mode metalorganic vapor2016
- Author(s)
  S. Y. Bae , B. O. Jung , K. Lekhal , S. Y. Kim , J. Y. Lee , D. S. Lee , M. Deki , Y. Honda and H. Amano
- Journal Title
  
  CrysEngComm
  
  Volume: 18 Issue: 9 Pages: 1505-1514
- DOI
  10.1039/c5ce02056e
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366, KAKENHI-PROJECT-25000011
[Journal Article] Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering2016
- Author(s)
  Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, and Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146505
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Study of radiation detection properties of GaN pn diode2016
- Author(s)
  Mutsuhito Sugiura, Maki Kushimoto, Tadashi Mitsunari, Kohei Yamashita, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Hidenori Mimura, Toru Aoki and Takayuki Nakano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FJ02-05FJ02
- DOI
  10.7567/jjap.55.05fj02
- NAID
  210000146544
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24686014, KAKENHI-PROJECT-16H03899
[Journal Article] Growth of semipolar (1-101) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001)2016
- Author(s)
  Maki Kushimoto, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum2015
- Author(s)
  S. Y. Bae, B. O. Jung, K. Lekhal, D. S. Lee, M. Deki, Y. Honda and H. Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146528
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Resonant Raman and FTIR spectra of carbon doped GaN2015
- Author(s)
  S.Ito, H.Kobayashi, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Journal Title
  
  J. Crystal Growth
  
  Volume: 414 Pages: 56-61
- DOI
  10.1016/j.jcrysgro.2014.11.024
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells2015
- Author(s)
  Maki Kushimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 2 Pages: 022702-022702
- DOI
  10.7567/apex.8.022702
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-14J03143, KAKENHI-PROJECT-24686041, KAKENHI-PROJECT-25000011
[Journal Article] Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region2015
- Author(s)
  Jung Byung Oh, Bae Si-Young, Kim Sang Yun, Lee Seunga, Lee Jeong Yong, Lee Dong-Seon, Kato Yoshikhiro, Honda Yoshio, Amano Hiroshi
- Journal Title
  
  Nano Energy
  
  Volume: 11 Pages: 294-303
- DOI
  10.1016/j.nanoen.2014.11.003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14F04366, KAKENHI-PROJECT-25000011
[Journal Article] Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique2014
- Author(s)
  Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  CrystEngComm
  
  Volume: 16 Issue: 11 Pages: 2273-2282
- DOI
  10.1039/c3ce42266f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14F04366, KAKENHI-PROJECT-25000011
[Journal Article] Nature of yellow luminescence band in GaN grown on Si substrate2014
- Author(s)
  S.Ito, T.Nakakita, N.Sawaki, M.Irie, T.Hikosaka, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 11S Pages: 11RC02-11RC02
- DOI
  10.7567/jjap.53.11rc02
- NAID
  210000144631
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24656019
[Journal Article] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Proc. SPIE
  
  Volume: 8625 Pages: 6-6
- DOI
  10.1117/12.2002738
- Data Source
  KAKENHI-PROJECT-22360009, KAKENHI-PROJECT-24656019
[Journal Article] Stacking faults and luminescence property of In- GaN nanowires2013
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Stacking 10 nm図 4:STEM 観察による InGaN ナノワイヤにおける双晶図 5 :InGaN ナノワイヤにおける双晶密度と積分 PL 強度の関係1011021034 1055 1056 1057 1058 105Integrated PL intensity (a.u.)Density of stacking faults (/cm)図 6:HOPG 基板上 GaN ナノワイヤ1μm faults and luminescence property of In- GaN nanowires2013
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Fabrication of InGaN/GaN Multiple Quantum Wells on (1-101) GaN2013
- Author(s)
  T. Tanikawa, T. Sano, M. Kushimoto, Y. Honda, M. Yamaguchi, H. Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 8S Pages: 08JC05-08JC05
- DOI
  10.7567/jjap.52.08jc05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24686041
[Journal Article] GaN nanowires grown on a graphite substrate by RF-MBE2013
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] GaN nanowires grown on a graphite substrate by RF-MBE2013
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate2012
- Author(s)
  T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, N.Sawaki
- Journal Title
  
  phys.stat.sol.(b)
  
  Volume: 249 Issue: 3 Pages: 468-471
- DOI
  10.1002/pssb.201100445
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J08362, KAKENHI-PROJECT-22360009
[Journal Article] Impurity incorporation in semipolar (1-101)GaN grown on Si substrate2012
- Author(s)
  N.Sawaki, K.Hagiwara, T.Hikosaka, and Y.Honda
- Journal Title
  
  Semiconductor Science & Technology
  
  Volume: 27 Issue: 2 Pages: 5-5
- DOI
  10.1088/0268-1242/27/2/024006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Growth of InGaN Nanowires on a (111)Si Substrate by RF-MBE2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  phys. stat. sol. (c)
  
  Volume: 9 Issue: 3-4 Pages: 646-649
- DOI
  10.1002/pssc.201100446
- NAID
  110008726018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] A local vibration mode in a carbon doped (1-101)AlGaN2012
- Author(s)
  N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Journal Title
  
  Proc. SPIE
  
  Pages: 7-7
- DOI
  10.1117/12.905529
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  phys. stat. sol
  
  Volume: 9 Pages: 646-649
- NAID
  110008726018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Nitride LEDs on Si substrate2011
- Author(s)
  N.Sawaki and Y.Honda
- Journal Title
  
  Science China Technological Sciences
  
  Volume: 54 Issue: 1 Pages: 38-41
- DOI
  10.1007/s11431-010-4182-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Spontaneous formation of highly regular superlattice structure in InGa N epilayers grown by molecular beam epitaxy2011
- Author(s)
  Z.H.Wu, Y.Kawai, Y.-Y.Fang, C.Q.Chen, H.Kondo, M.Hori, Y.Honda, M.Yamaguchi, H.Amano
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98 Issue: 14
- DOI
  10.1063/1.3574607
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656015
[Journal Article] Drastic Reduction of Dislocation Density in Semipolar (11-22) GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy2011
- Author(s)
  T.Murase, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, N.Sawaki
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000138251
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760012
[Journal Article] Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates2011
- Author(s)
  I.W.Feng, X.K.Cao, J.Li, J.Y.Lin,H.X.Jiang, N.Sawaki, Y.Honda,T.Tanikawa, and J.M.Zavada
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 98 Issue: 8 Pages: 3-3
- DOI
  10.1063/1.3556678
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Drastic reduction of dislocation density in semipolar (11-22)GaN stripe crystal on silicon substrate by dual selective metal-organic vapor phase epitaxy2011
- Author(s)
  T.Murase, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 1S1 Pages: 01AD04-01AD04
- DOI
  10.1143/jjap.50.01ad04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semi-polar GaN2011
- Author(s)
  Z.H.Wu, T.Tanikawa, T.Murase, Y.Y.Fang, C.Q.Chen, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 98 Issue: 5 Pages: 98-98
- DOI
  10.1063/1.3549561
- Year and Date
  2011-01-31
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy2011
- Author(s)
  Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98
- URL
  http://dx.doi.org/10.1063/1.3574607
- Data Source
  KAKENHI-PROJECT-23656015
[Journal Article] Drastic Reduction of Dislocation Density in Semipolar(11-22)GaN Stripe Crystal on Si Substrate by Dual Selective Metal-Organic Vapor Phase Epitaxy2010
- Author(s)
  T.Murase, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, N.Sawaki
- Journal Title
  
  Jpn.J.Appl.Phys. 50
- NAID
  210000138251
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760012
[Journal Article] HVPE growth of a -plane GaN on a GaN template(110)Si substrate2010
- Author(s)
  T.Tanikawa, N.Suzuki, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys.stat.sol.(c) 7
  
  Pages: 1760-1763
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760012
[Journal Article] HVPE growth of a-plane GaN on a GaN template (110)Si substrate2010
- Author(s)
  T.Tanikawa, N.Suzuki, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys.stat.sol.(c)
  
  Volume: 7 Pages: 1760-1763
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760012
[Journal Article] HVPE growth of a-plane GaN on a GaN template (110)Si substrate2010
- Author(s)
  T.Tanikawa, N.Suzuki, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  physica status solidi C
  
  Volume: 7 Issue: 7-8 Pages: 1760-1763
- DOI
  10.1002/pssc.200983563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360009
[Journal Article] Reduction of dislocations in a (11-22)GaN grown by selective MOVPE on (113)Si2009
- Author(s)
  T.Tanikawa, Y.Kagohashi, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2879-2882
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760012
[Journal Article] Growth and properties of semi-polar GaN on a patterned silicon substrate2009
- Author(s)
  N.Sawaki, T.Hikosaka, N, Koide, S.Tanaka, Y.Honda, M.Yamaguchi
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2867-2874
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760012
[Journal Article] Growth and properties of semi-polar GaN on a patterned silicon substrate2009
- Author(s)
  N. Sawaki, T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi and T. Tanaka
- Journal Title
  
  J. Crystal Growth Online 14 Jan. doi.10.1016
  
  Pages: 1-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Reduction of dislocations in a(11-22)GaN grown by selective MOVPE on(113)Si2009
- Author(s)
  T.Tanikawa, Y.Kagohashi, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2879-2882
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760012
[Journal Article] Growth and properties of semi-polar GaN on a patterned silicon substrate2009
- Author(s)
  N.Sawaki, T.Hikosaka, N.Koide, S.Tanaka, Y.Honda, M.Yamaguchi
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2867-2874
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760012
[Journal Article] Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE2008
- Author(s)
  T.Tanikawa, T.Hikosaka, Y.Honda, M.Yamaguchi and N.Sawaki
- Journal Title
  
  phys. sta. sol.(c) 5
  
  Pages: 2966-2968
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Fabrication and properties of semi- polar (1-101) and (11-22)InGaN/GaN MQW light emitting diode on patterned Si substrates2008
- Author(s)
  T.Hikosaka, T.Tanikawa, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. sta. sol.(c) 5
  
  Pages: 2234-2237
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth of non-polar (11-20)GaN on a patterned (110)Si substrate by selective MOVPE2008
- Author(s)
  T.Tanikawa, D.Rudolph, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  J.Crystal Growth 310
  
  Pages: 4999-5002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Al doping in (1-101)GaN films grownon patterned (001)Si substrate2007
- Author(s)
  T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki, J
- Journal Title
  
  Appl. Phys 101.103513
  
  Pages: 1-5
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] MOVPE growth and cathodoluminescence properties of GaN microcrystal co-doped with Zn and Si2007
- Author(s)
  Y. Honda, 他
- Journal Title
  
  J. Crystal Growth 300
  
  Pages: 110-113
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Series resistance of n-Si/AlGaN/GaN structure grown by MOVPE2007
- Author(s)
  Y.Honda, S.Kato, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat. sol 4
  
  Pages: 2740-2743
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN hetero- structures2007
- Author(s)
  X.X.Han, Y.Honda, T.Narita, M.Yamaguchi, and N.Sawaki, J
- Journal Title
  
  Phys.: Condens. Matter 19, 046204
  
  Pages: 1-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Mg doping in (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE2007
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  J.Crystal Growth 298
  
  Pages: 207-210
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Cathodoluminescence Properties of InGaN codoped with Zn and Si2006
- Author(s)
  Y.Honda, Y.Yanase, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (c) 3・6
  
  Pages: 1915-1918
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Carbon Incorporation on (1 101) Facet of A1GaN in Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Jap. J. Appl. Phys. 45・10A
  
  Pages: 7655-7660
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] The surface diffusion of Ga on an A1GaN/GaN stripe structure in the selective MOVPE2006
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (b) 243・7
  
  Pages: 1665-1668
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented(001)Si substrate by selective MOVPE2006
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat.sol 3
  
  Pages: 1425-1428
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure2006
- Author(s)
  H.Kondo, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Jap. J. Appl. Phys. 45・5A
  
  Pages: 4015-4017
- NAID
  40007248571
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] p-type conduction in a C-doped (1-101) GaN grown on a 7-degree-off oriented (001) Si substrate by selective MOVPE2006
- Author(s)
  T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  phys. stat. sol. (c) 3・6
  
  Pages: 1425-1428
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Stata Solidi 2
  
  Pages: 2349-2352
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Uniform growth of GaN on AlN template (111)Si substrate by HYPE2005
- Author(s)
  Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Phys.Stat.Sol.(c) 2巻・7号
  
  Pages: 2125-2128
- Data Source
  KAKENHI-PROJECT-16760252
[Journal Article] Uniform growth of GaN on AIN templated (111) Si substrate by HVPE2005
- Author(s)
  Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Status Solidi (c) 2巻・7号
  
  Pages: 2125-2128
- Data Source
  KAKENHI-PROJECT-16760252
[Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005
- Author(s)
  T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  phys. stat. sol 2
  
  Pages: 2349-2352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE2005
- Author(s)
  T.Hikosaka, Y.Honda, N.Koide, M.Yamaguchi, N.Sawaki
- Journal Title
  
  IOP Conf.Series 184
  
  Pages: 251-254
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Uniform growth of GaN on AlN templated (111)Si substrate by HVPE2005
- Author(s)
  Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Status Solidi (c) 印刷中
- Data Source
  KAKENHI-PROJECT-16760252
[Journal Article] Incorporation of carbon on a (1-101)facet of GaN by MOVPE2005
- Author(s)
  N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
- Journal Title
  
  J.Cryst.Growth 284
  
  Pages: 341-346
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Uniform growth of GaN on AlN templated (111)Si substrate by HVPE2005
- Author(s)
  Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
- Journal Title
  
  Physica Stata Solidi 2
  
  Pages: 2125-2128
- Data Source
  KAKENHI-PROJECT-16106001
[Journal Article] Optical and electrical properties of (1-101)GaN grown on a 7°off-axis (001)Sisubstrate2004
- Author(s)
  T.Hikosaka, T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
- Journal Title
  
  Appl. Phys. Lett 84
  
  Pages: 4717-4719
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16106001
[Patent] 窒化物半導体構造およびその製造方法2007
- Inventor(s)
  澤木宣彦、本田善央、彦坂年輝、谷川智之
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007-06-07
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 耐環境性向上を目指した低 B 組成 BGaN 中性子検出器の作製と評価2024
- Author(s)
  工藤涼兵、櫻井辰大、小久保瑛斗、川崎晟也、都木克之、西澤潤一、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] 長波長中性子ビームを用いた BGaN 検出器の中性子検出特性評価2024
- Author(s)
  櫻井辰大、安藤光佑、工藤涼兵、川崎晟也、都木克之、西澤潤一、日野正裕、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] Fabrication and characterization of BGaN diodes for nuclear instrumentation system2023
- Author(s)
  Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  Inter-Academia 2023 (iA2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] 過酷環境下での動作を目指した BGaN ダイオードの作製と諸特性評価2023
- Author(s)
  工藤涼兵、櫻井辰大、川崎晟也、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] Development of BGaN diodes with high radiation tolerance for nuclear instrumentation system2023
- Author(s)
  Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  International Conference on Materials and Systems for Sustainability 2023 (ICMaSS2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] 高ドーズ中性子照射場における BGaN 検出器の放射線検出特性評価2023
- Author(s)
  櫻井辰大、工藤涼兵、川崎晟也、岸下徹一、櫻井良憲、八島浩、牧野高紘、大島武、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] Fabrication and characterization of BGaN diodes for nuclear instrumentation system2023
- Author(s)
  Ryohei Kudo, Tatsuhiro Sakurai, Seiya Kawasaki, Tetsuichi Kishishita, Yoshinori Sakurai, Hiroshi Yashima, Takahiro Makino, Takeshi Ohshima, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  he 14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] Development of BGaN growth on Mg-doped GaN template for neutron imaging sensors2023
- Author(s)
  Yusaku Hashimoto, Shun Nishikawa, Seiya Kawasaki, Genichiro Wakabayashi, Yoshio Honda, Hiroshi Amano, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  Inter-Academia 2023 (iA2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23H00099
[Presentation] Structural Properties of Epitaxial ScAlN Films Grown by Sputtering: Experimental and Machine Learning Approaches2023
- Author(s)
  Atsushi Kobayashi,Yoshio Honda,Takuya Maeda,Kohei Ueno,Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] III族窒化物半導体検出器の高温耐性評価2022
- Author(s)
  林幸佑、中川央也、川崎晟也、出来真斗、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] 傾斜組成 BGaN 層を用いた BGaN 放射線検出器の開発2022
- Author(s)
  夏目朋幸、宮澤篤也、中村大輔、林幸佑、橋本優作、川崎晟也、權熊、若林源一郎、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] Pulsed electron microscopes using photoelectron beam from GaN semiconductor photocathodes2022
- Author(s)
  T. Nishitani,A. Narita, H. Iijima, A. Koizumi, D. Sato, S. Noda, Y. Arakawa, H. Shikano, Y. Honda and H. Amano
- Organizer
  The 9th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2022)
- Invited
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] 耐高温中性子半導体検出器に向けた新規BGaNデバイスの作製2022
- Author(s)
  中村大輔、西川瞬、小関凌也、林幸佑、川崎晟也、權熊、若林源一郎、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] BGaN 中性子検出器における結晶品質およびデバイス構造が検出特性に与える影響(2)2021
- Author(s)
  宮澤篤也、太田悠斗、松川真也、林幸佑、中川央也、川崎晟也、安藤悠人、本田善央、天野浩、嶋紘平、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] GaNダイオード放射線検出器のα線検出特性の温度依存性2021
- Author(s)
  中川央也、林幸佑、宮澤篤也、本田善央、天野浩、中野貴之、青木徹
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] Impact of growth pressure on the neutron-detection efficiency of BGaN diodes2021
- Author(s)
  A. Miyazawa, Y. Ohta, S. Matsukawa, K. Hayashi, H. Nakagawa, S. Kawasaki, Y. Ando, G. Wakabayashi, Y. Honda, H. Amano, K. Shima, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki, T. Nakano
- Organizer
  2021 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2021 IEEE NSD MIC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] NEA活性化方法におけるInGaNフォトカソードの電子放出特性の違い, The difference of InGaN photocathode with photoemission characteristic in NEA activation method2021
- Author(s)
  鹿島将央, 佐藤大樹, 小泉淳, 飯島北斗, 西谷智博, 本田善央, 天野浩, 目黒多加志
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] Impact of As2 pressure on the molecular beam epitaxial growth of AlGaAs superlattice at temperature over 700℃2021
- Author(s)
  Reiji Suzuki, Iori Morita, Fumitaro Ishikawa, Anna Honda, Daiki Sato, Atsushi Koizumi, Tomihiro Nishitani, Masao Tabuchi
- Organizer
  21st International Conference on Molcular Beam Epitaxy (ICMBE 2021), September 6-9, ONLINE
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] BGaNダイオードの高温環境下における検出特性評価2021
- Author(s)
  林幸佑、中川央也、宮澤篤也、川崎晟也、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] 厚膜BGaN結晶成長におけるGaN中間層の影響およびデバイス特性評価2021
- Author(s)
  松川真也、太田悠斗、宮澤篤也、中川央也、川崎晟也、安藤悠人、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] As2を利用した700℃以上成長温度でのフォトカソード構造AlGaAs/GaAs超格子MBE成長2021
- Author(s)
  鈴木玲士, 石川史太郎, 本田杏奈, 佐藤大樹, 小泉淳, 西谷智博, 田渕雅夫
- Organizer
  第82回応用物理学会秋季学術講演会, 2021年9月12日, オンライン開催
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode2020
- Author(s)
  I. Morita, F. Ishikawa, A. Honda, D. Sato, A. Koizumi, T. Nishitani, M. Tabuchi
- Organizer
  Solid State Devices and Materials 2020
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] BGaN中性子検出器における結晶品質およびデバイス構造が検出特性に与える影響2020
- Author(s)
  太田悠斗、高橋祐吏、山田夏暉、宮澤篤也、中川央也、川崎晟也、本田善央、天野浩、嶋紘平、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] Improvement of neutron detection efficiency for BGaN semiconductor detectors2019
- Author(s)
  T. Nakano, Y. Takahashi, Y. Ohta, N. Yamada, H. Nakagawa, Y. Honda, H. Amano, K. Shima, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki
- Organizer
  2019 IEEE Nuclear Science Symposium (NSS) and Medical Imaging Conference (MIC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] Evaluation of BGaN growth temperature dependence and fabrication of neutron semiconductor detectors2019
- Author(s)
  Yuri Takahashi, Takayuki Maruyama, Natsuki Yamada, Kazushi Ebara, Yuto Ohta, Hisaya Nakagawa, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano, Kazunobu Kojima, Shigehusa Chichibu, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] Surface Functional Recovery with Anneal Treatment for GaN Photocathode2019
- Author(s)
  Daiki Sato, Tomohiro Nishitani, Yoshio Honda, and Hiroshi Amano
- Organizer
  The 63th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] BGaN結晶成長におけるTMB流量依存性の検討および中性子検出器の開発2019
- Author(s)
  太田悠斗、高橋祐吏、丸山貴之、山田夏暉、中川央也、川崎晟也、宇佐美茂佳、本田善央、天野浩、嶋紘平、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  日本結晶成長学会ナノエピ分科会「第11回ナノ構造・エピタキシャル成長講演会」
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] BGaN半導体中性子検出器のチップサイズ小型化2019
- Author(s)
  山田夏暉、太田悠斗、高橋祐吏、丸山貴之、中川央也、川崎晟也、宇佐美茂佳、本田善央、天野浩、井上翼、青木徹、中野貴之
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] BGaN結晶成長におけるTMB流量依存性の検討および中性子検出デバイスの作製2019
- Author(s)
  太田悠斗、高橋祐吏、丸山貴之、山田夏暉、中川央也、川崎晟也、宇佐美茂佳、本田善央、天野浩、嶋紘平、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H04394
[Presentation] 中性子イメージングセンサーに向けたBGaN半導体検出器の開発2018
- Author(s)
  高橋祐吏、丸山貴之、山田夏暉、江原一司、太田悠人、中川央也、宇佐美茂佳、本田善央、天野浩、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] Fabrication of BGaN solid state detector for neutron imaging2018
- Author(s)
  Takayuki NAKANO, Ken MOCHIZUKI, Takayuki MARUYAMA, Natsuki YAMADA, Hisaya NAKAGAWA, Shigeyoshi USAMI, Yoshio HONDA, Hiroshi AMANO, Kazunobu KOJIMA, Shigefusa F. CHICHIBU, Yoku INOUE, Toru AOKI
- Organizer
  International Workshop on Position Sensitive Neutron Detectors (PSND 2018 WORKSHOP)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] Fabrication and evaluation of thick BGaN neutron detection diodes2018
- Author(s)
  Takayuki Maruyama, Yuri Takahashi, Natsuki yamada, Kazushi Ebara, Hisaya Nakagawa, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano, Kazunobu Kojima, Shigefusa F. Chichibu, Yoku Inoue, Toru Aoki, and Takayuki Nakano
- Organizer
  The International Workshop on Nitride Semiconductors 2018 (IWN 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] 厚膜BGaN中性子半導体検出器の作製と放射線検出特性評価2018
- Author(s)
  丸山貴之、望月健、中川央也、宇佐美茂佳、本田善央、天野浩、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] BGaN半導体検出器の厚膜化および放射線検出特性評価2018
- Author(s)
  高橋祐吏、丸山貴之、山田夏暉、江原一司、望月健、中川央也、宇佐美茂佳、本田善央、天野浩、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] Radiation detection characteristics of BGaN semiconductor detectors2018
- Author(s)
  N. Yamada, K. Mochizuki, T. Maruyama, K. Ebara, Y. Takahashi, H. Nakagawa, S. Usami, Y. Honda, H. Amano, K. Kojima, S. F. Chichibu, Y. Inoue, T. Aoki, T. Nakano
- Organizer
  2018 IEEE Nuclear Science Symposium and Medical Imaging Conference, and Workshop on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] MOVPE 法を用いた厚膜 BGaN 成長および縦型中性子検出デバイスの作製2018
- Author(s)
  高橋祐吏、丸山貴之、山田夏暉、江原一司、望月健、中川央也、宇佐美茂佳、本田善央、天野浩、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] MOVPE 法を用いた厚膜BGaN 結晶成長の検討および縦型中性子検出デバイスの作製2018
- Author(s)
  丸山貴之、高橋祐吏、山田夏暉、江原一司、望月健、中川央也、宇佐美茂佳、本田善央、天野浩、小島一信、秩父重英、井上翼、青木徹、中野貴之
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] BGaN半導体材料を用いた新規熱中性子検出器の提案と開発2017
- Author(s)
  中野貴之、望月健、宇佐美茂佳、本田善央、天野浩、小島一信、秩父重英、三村秀典、井上翼、青木徹
- Organizer
  日本原子力学会2017年秋の大会
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] Fabrication and evaluation of vertical type BGaN diodes by MOVPE using trimethylboron2017
- Author(s)
  K. Mochizuki, T. Nakamura, T. Arikawa, Y. Inoue, S. Usami, M. Kushimoto, Y. Honda, H. Amano, K. Kojima, S. F. Chichibu, H. Mimura, T. Aoki, and T. Nakano
- Organizer
  The 12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] GaNダイオードを用いた各照射条件下におけるα線検出特性評価2017
- Author(s)
  中野貴之、有川卓弥、中川央也、宇佐美茂佳、久志本真希、本田喜央、天野浩、Schütt Sebastian、Vogt Adrian、Fiederle Michael、三村秀典、井上翼、青木徹
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, (神奈川県、横浜市)
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] Fabrication and evaluation of vertical type BGaN neutron detection diodes2017
- Author(s)
  T. Nakano, K. Mochizuki, T. Arikawa, H. Nakagawa, S. Usami, Y. Honda, H. Amano, K. Kojima, S. F. Chichibu, H. Mimura, Y. Inoue, T. Aoki
- Organizer
  2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, and Workshop on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] BGaN縦型ダイオードの作製と放射線検出特性の評価2017
- Author(s)
  望月健、中村匠、有川卓弥、宇佐美茂佳、久志本真希、本田善央、天野浩、小島一信、秩父重英、三村秀典、井上翼、青木徹、中野貴之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, (神奈川県、横浜市)
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] The growth of self-organized GaN nanowires on Si substrate by Molecular Beamepitaxy2016
- Author(s)
  Yoshio Honda, Yuri Tsutsumi, Tatsuya Hattori, and Hiroshi Amano
- Organizer
  ISPlasma 2016
- Place of Presentation
  名古屋大学
- Year and Date
  2016-02-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] レーザ散乱を用いたInGaN結晶成長表面粗さ回復の観察2016
- Author(s)
  山本哲也、田村彰、永松謙太郎、新田州吾、本田善央、天野浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 光電流測定によるLED内部量子効率評価2016
- Author(s)
  宇佐美茂佳、本田善央、天野浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] In-situ monitoring of InGaN growth by Laser absorption and scattering method2016
- Author(s)
  Yoshio Honda, Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano
- Organizer
  SPIE. PHOTONICS WEST
- Place of Presentation
  San Francisco, CA, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Characterization of pin-GaN diodes radiation detection for alpha-ray2016
- Author(s)
  T. Arikawa, K. Mochizuki, M. Sugiura, H. Nakagawa, S. Usami, M. Kushimoto, Y. Honda, H. Amano, S. Schütt, A. Vogt, M. Fiederle, H. Mimura, Y. Inoue, T. Aoki, T. Nakano
- Organizer
  2016 IEEE Nuclear Science Symposium and Medical Imaging Conference, and Workshop on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors (NSS/MIC/RTSD)
- Place of Presentation
  Strasbourg Convention Center, (Strasbourg, France)
- Year and Date
  2016-10-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] III族窒化物放射線検出器に向けたGaN半導体α線検出特性の評価2016
- Author(s)
  中川央也, 有川卓弥, 望月健, 宇佐美茂佳, 久志本真希, 本田善央, 天野浩, 三村秀典, 井上翼, 中野貴之, 青木徹
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、（新潟県、新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] Study on the range of alpha particles in GaN diodes2016
- Author(s)
  T. Nakano, T. Arikawa, K. Mochizuki, M. Sugiura, H. Nakagawa, S. Usami, M. Kushimoto, Y. Honda, H. Amano, S. Schütt, A. Vogt, M. Fiederle, H. Mimura, Y. Inoue, T. Aoki
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
- Place of Presentation
  Nagoya Congress Center, (Nagoya, Japan)
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H03899
[Presentation] SELECTIVE GaN GROWTH ON AMORPHOUS LAYER BY COMBINED EPITAXY WITH MBE AND MOCVD2015
- Author(s)
  Si-Young Bae, Jung-Wook Min, Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Yong-Tak Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  ICNS-11
- Place of Presentation
  Beijing, China
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Selective Area Growth of GaN Nanorods on Si (111) Grown by Pulsed-Mode MOCVD2015
- Author(s)
  Si-Young Bae, Byuong Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  EーMRS学会
- Place of Presentation
  France
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] レーザその場観察を用いたInGaN結晶成長2015
- Author(s)
  山本哲也、田村彰、本田善央、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 001)Si基板上半極性面InGaN光共振器の誘導放出特性2015
- Author(s)
  久志本　真希、本田善央、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス(神奈川県平塚市)
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] Lasing Properties of (1-101) InGaN/GaN Stripe Cavity Structure on Patterned (001) Si Substrate2015
- Author(s)
  Maki Kushimoto, Yoshio Honda, Hiroshi Amano
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Si基板上(1-101)InGaNストライプレーザー作製に向けた共振器構造2015
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第7回窒化物半導体結晶成長講演会(プレISGN-6)
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] InGaN 系光デバイスの成長と特性評価2015
- Author(s)
  本田善央、田村彰、山本哲也、李昇我、久志本真希、天野浩
- Organizer
  STR 結晶成長結晶成長とデバイス解析
- Place of Presentation
  横浜
- Year and Date
  2015-06-26
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] InGaN成長中の光散乱を用いたin situ観察と成長機構2015
- Author(s)
  本田善央、田村彰、山本哲也、久志本真希、天野浩
- Organizer
  第23回シンポジウム「窒化物半導体の成長技術とメカニズム理解」
- Place of Presentation
  早稲田大学
- Year and Date
  2015-05-22
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Optical Characterization and Structural Investigation of GaN Nanorod Arrays and its Based InGaN/GaN MQWs Core-Shell Nanoarchitecture Arrays2015
- Author(s)
  Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Masataka Imura, Yoshio Honda, Hiroshi Amano
- Organizer
  2015 MRS Spring Meeting
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2015-04-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Reduction of Residual Carbon on Un-doped GaN Grown using Metal Organic Hydrogen Chloride Vapor Phase Epitaxy2015
- Author(s)
  Zheng Ye, Zheng Sun, Kentaro Nagamatsu, Manato Deki, Yoshio Honda, and Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] InGaN growth mechanism evaluation by In-situ monitoring based on LAS2015
- Author(s)
  Yoshio Honda, Akira Tamura, Tetsuya Yamamoto, Maki Kushimoto, Hiroshi Amano
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  京都大学
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of Highly Ordered GaN Nanorod Light-Emitting Didoes on Si-Based AlN Template for Epitaxial Transfer2015
- Author(s)
  Si-Young Bae, Byuong Oh Jung, Ho-Jun Lee, Kaddour Lekhal, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Characterization of light-emitting diode efficiency by biased photocurrent and photoluminescence measurement2015
- Author(s)
  宇佐美茂佳、光成正、本田善央、天野浩
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Fabrication of High Indium Content InGaN Quantum Wells on Semipolar (1-101) Micro Stripe Crystals/Si2015
- Author(s)
  M. Kushimoto, Y. Honda and H. Amano
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  滋賀県
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth and Characterization of Semipolar (1-101) High-Indium-Content InGaN Quantum Wells on Si (001)2015
- Author(s)
  Maki Kushimoto, Yoshio Honda, Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Low Temperature Volumetric Acceptor Activation of Bulk Mg-Doped GaN by Micro wave Irradiation2015
- Author(s)
  Marc L Olsson, Yoshio Honda, Hiroshi Amano
- Organizer
  MRS-Fall Meeting
- Place of Presentation
  Boston, Massachusetts, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 世界を照らす青色LED2015
- Author(s)
  本田善央
- Organizer
  第20回東海地区分析研究会議講演会
- Place of Presentation
  愛知県名古屋市
- Year and Date
  2015-10-16
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] HVPE and VLS-HVPE Synthesis of GaN Nanowires2015
- Author(s)
  Kaddour LEKHAL, Tadashi Mitsunari, R. Kizu, Si-Young Bae, Yoshio Honda and Hiroshi Amano
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Optimal Growth Condition in Pulsed-Mode MOVPE Process for Selective Area Growth of GaN Nanorod Arrays and Its Based 3D-LED Structure2015
- Author(s)
  Byung Oh JUNG, Si-Young BAE, Masataka IMURA, Yoshio HONDA, Hiroshi AMANO
- Organizer
  ICMAT2015 & IUMRS-ICA2015
- Place of Presentation
  Suntec City, Singapore
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた(0001)面GaN上InGaN/GaN多重量子井戸の成長Ⅱ2015
- Author(s)
  田村彰、山本哲也、本田善央、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた(0001)面GaN上lnGaN/GaN多重量子井戸の成長2015
- Author(s)
  田村彰、山本哲也、本田善央、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Effect of Increasing Pressure on the Growth of High-Indium-Content InGaN by MOVPE2015
- Author(s)
  A. Tamura, T. Yamamoto, K. Yamashita, Y. Honda, H. Amano
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (001)Si基板上半極性面InGaN光共振器の誘導放出特性2015
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス (神奈川県平塚市)
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Compatibility of hydride vapor phase epitaxy process with synthesis of horizontal and vertical GaN nanowires2015
- Author(s)
  Kaddour Lekhall, Si-Young Bae, Ho-Jun Lee, Zheng Sun, Manato Deki, Yoshio Honda and Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of InGaN well layer with an in-situ monitoring system2015
- Author(s)
  山本哲也、田村彰、宇佐美茂佳、永松謙太郎、新田州吾、本田善央、天野浩
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Structural and optical study of core-shell InGaN layers of GaN nanorods on Si substrates via pulsed-mode MOCVD2015
- Author(s)
  Byung Oh Jung, Kaddour Lekhal Dong-Seon Lee, Manato Deki, Yoshio Honda, and Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] バイアス印加光電流およびバイアス印加PL測定によるLED評価2015
- Author(s)
  宇佐美茂佳, 本田善央、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学 (神奈川県平塚市)
- Year and Date
  2015-03-10
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 半極性(1-101)GaNストライプ結晶上高In組成InGaN成長2015
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 指向性スパッタリングAlN中間層を用いたSi(001)基板上単結晶(10-13)GaN成長2015
- Author(s)
  光成正, 本田善央, 天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] MOHVPE法により成長したGaN膜中の光容量測定2015
- Author(s)
  出来真斗、叶正、本田善央、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Optical gain spectra of (1-101) InGaN stripe cavity structures on a patterned (001) Si substrate2014
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  IWN2014
- Place of Presentation
  Wroclaw Centennial Hall conference center
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (1-101) InGaNマイクロキャビティの誘導放出2014
- Author(s)
  久志本　真希、本田善央、天野浩
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺（静岡県伊豆市）
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] X線反射、CTR散乱及びレーザ吸収散乱法を用いた窒化物半導体結晶成長の原子レベルその場観察2014
- Author(s)
  田村彰、山下康平、光成正、鞠光旭、本田善央、田渕雅夫、竹田美和、渕真悟、天野浩
- Organizer
  平成26年度文部科学省ナノテクノロジープラットフォーム事業微細構造解析プラットフォーム放射光利用研究セミナー
- Place of Presentation
  大阪大学大学院基礎工学研究科国際棟セミナー室
- Year and Date
  2014-09-05
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Pre-sputter Technology for GaN Acceptor Doping by Mg-ion Implantation2014
- Author(s)
  孫政, 永山勉, 渡邊哲也, 本田善央, 天野浩
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Effect of Pressure Increase on the Growth of High-In-Content InGaN by MOVPE2014
- Author(s)
  A. Tamura, T. Yamamoto, K. Yamashita, T. Mitsunari, Y. Honda
- Organizer
  ISSLED2014
- Place of Presentation
  International Conference Center, National Sun Yat-sen University (Kaohsiung, Taiwan)
- Year and Date
  2014-12-19
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Realization of vertically well-aligned GaN nanowire based core-shell array growth by MOVPE : Morphology evolution and luminescent properties2014
- Author(s)
  Byung Oh Jung, Si-Young Bae, Masataka Imura, Yoshio Honda, Hiroshi Amano
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlGaN/GaN超格子分極によるp型伝導の温度依存性2014
- Author(s)
  石井貴大, 本田善央, 山口雅史, 天野浩
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] LEDにおける光電流を考慮した内部量子効率測定2014
- Author(s)
  宇佐美茂佳、本田善央、天野浩
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (001)Si基板上半極性面工nGaN光共振器の誘導放出特性2014
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Optical gain spectra of (1–101) InGaN stripe cavity structures2014
- Author(s)
  Maki Kushimoto, Yoshio Honda, Hiroshi Amano
- Organizer
  IWN2014
- Place of Presentation
  Wroclaw Centennial Hall conference center
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] Growth optimization of green InGaN multi-quantum well by in situ monitoring system2014
- Author(s)
  光成正、本田善央、天野浩
- Organizer
  LEDIA'14
- Place of Presentation
  横浜市
- Year and Date
  2014-04-22
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Recent Development of Atomic-Level in Situ Growth Monitoring Tools for the Fabrication of Nitride-Based Light Emitting Devices2014
- Author(s)
  H. Amano, G. Ju, A. Tamura, S. Usami, K. Yamashita, T. Mitsunari, Y. Honda, M. Tabuchi, Y. Takeda, S. Fuchi
- Organizer
  WLED-5
- Place of Presentation
  Jeju, Korea
- Year and Date
  2014-06-03
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] FTIR spectra in a heavily carbon doped (0001)GaN2014
- Author(s)
  K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Organizer
  ISPlasma2014
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] 加圧MOVPE法を用いた半極性面上InGaN/GaN多重量子井戸の成長2014
- Author(s)
  田村彰、本田善央、天野浩
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (001) Si基板上(1-101)ストライプInGaN共振器構造の誘導放出2014
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Two types of buffer layer for the growth of GaN on highly lattice mismatched substrates and their impact on the development of sustainable systems2014
- Author(s)
  Tadashi Mitsunari, Koji Okuno, Yoshio Honda, Hiroshi Amano
- Organizer
  Deutsche Physikalische Gesellschaft e. V.
- Place of Presentation
  Dresden, Germany
- Year and Date
  2014-04-03
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Study of Ga-polar GaN nanowire arrays formation mechanism using pulsed-mode MOVPE growth technique2014
- Author(s)
  Byung Oh Jung, Si-Young Bae, Dong-Seon Lee. Yoshio Honda, Hiroshi Amano
- Organizer
  ISGN-5
- Place of Presentation
  The Westin Hotel Peachtree Plaza, Atlanta, Georgia, USA
- Year and Date
  2014-05-17
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた半極性面上InGaN/GaN多重量子井戸の成長2014
- Author(s)
  田村彰、本田善央、天野浩
- Organizer
  第7回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] TiN層を導入した昇華法AlN成長2014
- Author(s)
  袴田涼馬, 本田善央, 天野浩
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Detail study on AlN bulk crystal grown by sublimation2014
- Author(s)
  袴田涼馬, 本田善央, 天野浩
- Organizer
  IUMRS-ICA2014
- Place of Presentation
  福岡大学(福岡県福岡市)
- Year and Date
  2014-08-24
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Diffuse laser based in situ monitoring of the growth of green InGaN multi quantum well2014
- Author(s)
  光成正, 本田善央, 天野浩, 他
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺 (静岡県伊豆市)
- Year and Date
  2014-07-09
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 逆方向バイアス下光電流測定によるSRHモデル修正2014
- Author(s)
  宇佐美茂佳、本田善央、天野浩
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of (1-101)InGaN stripes on patterned (001)Si substrate2014
- Author(s)
  曾根康和、久志本真希、本田善央、天野浩
- Organizer
  IUMRS-ICA2014
- Place of Presentation
  福岡大学(福岡県福岡市)
- Year and Date
  2014-08-24
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlGaN系材料・発光デバイスの現状と今後の課題2014
- Author(s)
  石井貴大、袴田涼馬、若杉侑也、本田善央、天野造、山川雅康、伴和仁、永松謙太郎、岡田成仁、井村将隆、岩谷素顕
- Organizer
  (独)日本学術振興会第145委員会
- Place of Presentation
  明治大学駿河台キャンパス
- Year and Date
  2014-01-17
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた半極性面上InGaN/GaN多重量子井戸の成長2014
- Author(s)
  田村彰、本田善央、天野浩
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Orientation improvement of AlN with thin Ti pre-deposition on the Si (001) substrate2014
- Author(s)
  光成正, 本田善央, 天野浩
- Organizer
  IWN2014
- Place of Presentation
  Wroclaw Centennial Hall conference center
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Laser-based in situ monitoring of high In-content InGaN growth on GaN (0001)2014
- Author(s)
  光成正, 本田善央, 天野浩, 他
- Organizer
  ISSLED 2014
- Place of Presentation
  台湾国立中山大学
- Year and Date
  2014-12-15
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Ultraprecision surface monitoring during growth of InGaN on GaN2014
- Author(s)
  H. Amano, G. Ju, A. Tamura, K. Yamashita, T. Mitsunari, Y. Honda, M. Tabuchi, Y. Takeda, and S. Fuchi
- Organizer
  WUPP for Wide-gap Semiconductors, 2014
- Place of Presentation
  Bath, UK
- Year and Date
  2014-08-21
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (1-101) InGaNマイクロキャビティの誘導放出2014
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Nature of yellow luminescence band in high quality GaN2014
- Author(s)
  S.Ito, T.Nakakita, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma2014
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Selective area grown GaN nanowire based InGaN/GaN MQWs coaxial array : structural characterization and luminescent properties2014
- Author(s)
  Byung Oh Jung, Si-Young Bae, Sang Yun Kim, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano
- Organizer
  2014 MRS Fall Meeting
- Place of Presentation
  Hynes Convention Center、Sheraton Boston Hotel (Boston, Massachesetts, USA)
- Year and Date
  2014-11-29
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 金属マスクを用いた昇華法AlN選択成長2014
- Author(s)
  袴田涼馬, 本田善央, 天野浩
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate2013
- Author(s)
  S.Ito, T.Nakagita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasam 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate2013
- Author(s)
  K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Anisotropic Optical Properties of Semipolar (1-101) InGaN/GaN Multiple Quantum Wells on a Patterned Si Substrate2013
- Author(s)
  M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  京都（同志社大学）
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] 加圧MOVPE法を用いたInGaN/GaN多重量子井戸の成長2013
- Author(s)
  土井友博,　本田善央,　山口雅史,　天野浩
- Organizer
  第74回応用物理学会
- Place of Presentation
  京都（同志社大学）
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2013, Feb. 4
- Place of Presentation
  San Francisco (USA).
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate2013
- Author(s)
  K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2013
- Place of Presentation
  Nagoya.
- Year and Date
  2013-01-31
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Coalescence and generation of stacking faults in a (1-101)GaN grown on a patterned (001)Si substrate2013
- Author(s)
  T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Taipei
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] High pressure InGaN growth on Sapphire substrate by MOVPE2013
- Author(s)
  Yoshio Honda, Tomohiro Doi, Masahito Yamaguchi and Hiroshi Amano
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  京都（同志社大学）
- Invited
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2013
- Place of Presentation
  San Francisco (USA)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate2013
- Author(s)
  S.Ito, T.Nakagita, H.Iwata, N.Sawakui, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2012
- Place of Presentation
  Nagoya (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 半極性(1-101)GaN における積層欠陥の振る舞い2013
- Author(s)
  中北太平、伊藤翔悟、岩田博之、澤木宣彦、本田善央、山口雅史、天野浩
- Organizer
  電気関係学会東海支部学術講演会
- Place of Presentation
  静岡大学
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Growth of high quality GaN on (111)Si using AlN:In nucleation layer2013
- Author(s)
  S.Ito, T.Nakagita, S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  6th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Taipei
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Si基板上GaN/AlInNエピタキシャル膜のPLスペクトル2013
- Author(s)
  伊藤翔悟、中北太平、澤木宣彦、入江将嗣、本田善央、山口雅史、天野浩
- Organizer
  電気関係学会東海支部学術講演会
- Place of Presentation
  静岡大学
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013
- Author(s)
  N.Sawaki, T.Nakagita, S.Ito, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE-OPTO 2013
- Place of Presentation
  San Francisco (USA)
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Light Emission Polarization Properties of (1-101) InGaN/GaN MQWs with Cavity Structure on Patterned Si Substrate2013
- Author(s)
  M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  10th International Conference on Nitride Semiconductors(ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] High pressure InGaN growth by MOVPE2012
- Author(s)
  Y. Honda, S. Sakakura, T. Doi, T. Tanikawa, M. Yamaguchi, and H. Amano
- Organizer
  第31回電子材料シンポジウム31th Electronic Materials Symposium (EMS-31)
- Place of Presentation
  静岡県伊豆市
- Year and Date
  2012-07-11
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] Si 基板上 InGaN ナノワイヤの積層欠陥と発光特性2012
- Author(s)
  田畑拓也,白知鉉,本田善央,山口雅史,天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Optical polarization properties in semipolar (1-101) InGaN/GaN multiple quantum well on a patterned Si Substrate2012
- Author(s)
  M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  北海道札幌市
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012
- Author(s)
  S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  International Workshop on NitrideSemiconductors
- Place of Presentation
  Sapporo.
- Year and Date
  2012-10-18
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] RF-MBE法によるガラス基板上InGaNナノ構造の作製2012
- Author(s)
  中川慎太, 田畑拓也, 本田善央, 山口雅史, 天野浩, 渕真悟, 竹田美和
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第4回　窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] InGaN growth on GaN/Sapphire by high pressure MOVPE2012
- Author(s)
  Y. Honda, S. Sakakura, T. Doi, T. Tanikawa, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  北海道札幌市
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] Si基板上InGaNナノワイヤの積層欠陥と発光特性2012
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012
- Author(s)
  S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo (Japan)
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Challenge for the growth of high-In-content InGaN2012
- Author(s)
  T. DOI:, T. Ohata, T. Tabata, S. Nakagawa, Y. Kawai, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  III-V and III-N-based High Efficiency Solar Cells for Future Energy Harvesting(Invited)
- Place of Presentation
  Chiba, Japan
- Year and Date
  2012-05-11
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Si 基板上 III-V族化合物半導体ナノワイヤの成長と応用2012
- Author(s)
  山口雅史,白知鉉,田畑拓也,中川慎太, 本田善央, 天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Si基板上半極性面(1-101)GaNストライプ上InGaN/GaN多重量子井戸構造の偏光特性2012
- Author(s)
  久志本真希・谷川智之・本田善央・山口雅史・天野浩
- Organizer
  信学会電子デバイス(ED)研究会
- Place of Presentation
  愛知県豊橋市
- Year and Date
  2012-05-17
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] InGaN growth on GaN/Sapphire by high pressure MOVPE2012
- Author(s)
  Yoshio Honda
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate2012
- Author(s)
  K.Hagiwara, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma 2012
- Place of Presentation
  Kasugai.
- Year and Date
  2012-03-06
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 加圧MOVPE法によるInGaN結晶成長2012
- Author(s)
  坂倉誠也、土井友博、大畑俊也、谷川智之、本田善央、山口雅史、天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Polarization properties 1n InGaN/GaN multiple quantum well on semipolar (1-101) GaN/Si2012
- Author(s)
  M. Kushimoto, T. Tanikawa, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  第31回電子材料シンポジウム31th Electronic Materials Symposium (EMS-31)
- Place of Presentation
  静岡県伊豆市
- Year and Date
  2012-07-11
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] RF-MBE法によるグラファイト基板上GaNナノワイヤの成長2012
- Author(s)
  中川慎太，田畑拓也，本田善央，山口雅史，天野　浩
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE 法によるグラファイト基板上 GaN ナノワイヤの成長2012
- Author(s)
  中川慎太,田畑拓也,本田善央,山口雅史,天野浩
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Year and Date
  2012-09-14
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 加圧MOVPEによるInGaN結晶成長2012
- Author(s)
  本田善央, 坂倉誠也, 土井友博, 谷川智之, 山口雅史, 天野
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] GaN nanowires grown on a graphite substrate by RF-MBE2012
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 高In組成InGaN実用化にむけて2012
- Author(s)
  天野浩、山口雅史、本田善央、谷川智之、坂倉誠也、大畑俊也、田畑拓也
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] GaN nanowires grown on a graphite substrate by RF-MBE2012
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo
- Year and Date
  2012-10-19
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Stacking faults and luminescence property of In- GaN nanowires2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] A local vibration mode in a carbon doped (1-101)AlGaN2012
- Author(s)
  N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  SPIE Photonics West 2012
- Place of Presentation
  San Francisco (USA).
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE2012
- Author(s)
  S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasam 2012
- Place of Presentation
  Kasugai.
- Year and Date
  2012-03-07
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] Stacking faults and luminescence property of In- GaN nanowires2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo
- Year and Date
  2012-10-19
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE 法によるガラス基板上 InGaN ナノ構造の作製2012
- Author(s)
  中川慎太,田畑拓也,本田善央,山口雅史, 天野浩, 渕真悟 , 竹田美和
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] TEM analyses of high-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  ISPlasma
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] 加圧MOVPE法によるInGaN/GaN MQW構造のIn組成揺らぎの改善2011
- Author(s)
  大畑俊也, 坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  春日、福岡
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] (111)Si基板上GaNのボイドを用いた残留応力低減2011
- Author(s)
  光成正, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (要旨集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] RF-MBE 法による(111)Si 基板上への InGaN ナノワイヤの成長 II2011
- Author(s)
  田畑拓也,白知鉉,本田善央,山口雅史,天野浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Growth of InGaN Nanowires on a (111)Si Substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  Glasgow, U.K.
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer2011
- Author(s)
  S.Kawakita, H.Iwata, D.Kato, T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  Toba.
- Year and Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] RF-MBE 法による(111)Si 基板上へのInGaN ナノワイヤの成長II2011
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学（山形県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  鳥羽国際ホテル（三重県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  Glasgow (U.K.)
- Year and Date
  2011-07-14
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 組成および井戸層厚を変調させたInGaN擬周期構造に関する研究2011
- Author(s)
  坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  第3回窒化物半導体結晶成長講演会
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長2011
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  信学会電子デバイス(ED)研究会
- Place of Presentation
  名古屋ベンチャービジネスラボラトリー（愛知県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Second- and third-generation nitride-based LEDs and challenge for future photovoltaic applications2011
- Author(s)
  T.Sano, T.Ohata, S.Sakakura, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, M.Mori, M.Iwaya, M.Imade, Y.Mori
- Organizer
  EDIS2011
- Place of Presentation
  生命ホール、大阪(招待講演)
- Year and Date
  2011-12-17
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] MBE 法による Si 基板上化合物半導体ナノワイヤ成長と評価2011
- Author(s)
  山口雅史,白知鉉,田畑拓也,本田善央,天野浩
- Organizer
  第15回名古屋大学 VBL シンポジウム
- Place of Presentation
  名古屋
- Year and Date
  2011-11-08
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate2011
- Author(s)
  K.Hagiwara, R.Katayama, M.Amano, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
- Place of Presentation
  T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano, "High-quality GaN grown on (111)Si using an AlInN intermediate layer," Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), May 23 (2011), Toba.
- Year and Date
  2011-05-25
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] FTIR spectra and LVMs in a carbon doped (1-101)GaN grown on a (001)Si substrate by MOVPE," ISPlasma2011
- Author(s)
  K.Hagiwara, M.Amano, R.Katayama, N.Sawaki, Y.Honda, T.Hikosaka, T.Tanikawa, N.Koide, M.Yamaguchi, and H.Amano
- Data Source
  KAKENHI-PROJECT-22360009
[Presentation] GaN growth on patterned Si/GaN template by HVPE2011
- Author(s)
  Y.Honda
- Organizer
  7th International Workshop on Bulk Nitride Semiconductor(IWBNS-7)
- Place of Presentation
  Koyasan(高野山)
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] Effect of high-quality GaN substrates on the improvement of performance of group-III-nitride-based devices2011
- Author(s)
  H.Amano, T.Sugiyama, T.Tanikawa, Y.Honda, M.Yamaguchi, Y.Isobe, A.Mishima, T.Makino, M.Iwaya, M.Imade, Y.Kitaoka, Y.Mori
- Organizer
  ECO-MATES2011
- Place of Presentation
  阪急ホテルエクスポパーク、大阪(招待講演)
- Year and Date
  2011-11-29
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 石英基板上InGaN ナノワイヤの成長2011
- Author(s)
  山口雅史，田畑拓也，白　知鉉，本田善央，天野　浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学（山形県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] GaN growth on patterned Si/GaN template by HVPE2011
- Author(s)
  Y.Honda
- Organizer
  7th International Workshop on Bulk Nitride Semiconductor (IWBNS-7)
- Place of Presentation
  Koyasan和歌山県伊都郡高野町
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] RF-MBE法による(111)Si基板上へのInGaNナノワイヤの成長2011
- Author(s)
  田畑拓也, 白知鉉, 本田善央, 山口雅史, 天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (要旨集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] 紫外～赤色LED究極効率を目指した窒化物半導体結晶成長技術2010
- Author(s)
  天野浩, 本田善央, 山口雅史
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会「GaN系プラネットコンシャスデバイス・材料の現状」
- Place of Presentation
  仙台
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Si基板上(1-101)InGaN/GaN MQWストライプレーザー構造の光学特性2010
- Author(s)
  村瀬輔, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] Si基板上(1-101)InGaN/GaN MQWストライプレーザー構造の光学特性2010
- Author(s)
  村瀬輔, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス(長崎県長崎市)
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] 半極性面GaNストライプ上InGaN/GaN MQWのMOVPE選択成長(II)2010
- Author(s)
  谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] Recent development of nitride-based micro- and nano-rod structure on Si and their application to high performance light emitters2010
- Author(s)
  T.Tanikawa, T.Murase, T.Tabata, Y.Kawai, Y.Honda, M.Yamaguchi, H.Amano
- Organizer
  9th International Akasaki Research Center Symposium
- Place of Presentation
  Nagoya(名古屋)
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] 加工Si基板上(1-101)GaNの不純物取り込み2010
- Author(s)
  山下康平, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] 加工Si基板上(1-101)GaNの不純物取り込み2010
- Author(s)
  山下康平, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス(長崎県長崎市)
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] 加圧MOVPE法を用いたInGaN結晶成長2010
- Author(s)
  坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  東京
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Recent development of nitride-based micro- and nano-rod structure on Si and their application to high performance light emitters2010
- Author(s)
  T.Tanikawa, T.Murase, T.Tabata, Y.Kawai, Y.Honda, M.Yamaguchi, H.Amano
- Organizer
  9th International Akasaki Research Center Symposium
- Place of Presentation
  Nagoya
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] 半極性面GaNストライプ上InGaN/GaN MQWのMOVPE選択成長(II)2010
- Author(s)
  谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス(長崎県長崎市)
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission properties under photo-excitation2009
- Author(s)
  B.Kim, T.Tanikawa, Y.Honda, M.Yamaguchi, N.Sawaki
- Organizer
  The 14th International Conference on Modulated Semiconductor structures
- Place of Presentation
  Kobe(神戸)神戸国際会議場
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] Si基板上半極性面GaNへのInGaNヘテロ成長2009
- Author(s)
  本田善央
- Organizer
  第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大(東京)
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] Si基板上半極性面GaNへのInGaNヘテロ成長2009
- Author(s)
  本田善央
- Organizer
  第1回窒化物半導体結晶成長講演会
- Place of Presentation
  日東京農工大(東京)
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] GaN/InGaN hetero growth on(1-101)and (11-22)GaN on Si substrate2009
- Author(s)
  Y.Honda, T.Tanikawa, B.J.Kim, M.Yamaguchi, N.Sawaki
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  Shiga(滋賀)
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] 選択MOVPE法を用いたSi基板上(11-22)GaNの転位低減2009
- Author(s)
  村瀬輔, 谷川智之, 本田善央, 山口雅史, 澤木宣彦
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山市)
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] GaN/InGaN hetero growth on (1-101) and (11-22) GaN on Si substrate2009
- Author(s)
  Y.Honda, T.Tanikawa, B.J.Kim, M.Yamaguchi, N.Sawaki
- Organizer
  第28回電子材料シンポジウム
- Place of Presentation
  Shiga(滋賀))ラフォーレンホニ
- Data Source
  KAKENHI-PROJECT-20760012
[Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate (Invited)2008
- Author(s)
  N.Sawaki, T.Hikosaka, N.Koide, Y.Honda, and Yamaguchi
- Organizer
  ISGN-2
- Place of Presentation
  Izu
- Year and Date
  2008-07-09
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] DAP emission band in a carbon doped (1-101)GaN grown on (001) Si substrate2008
- Author(s)
  Y. Honda, 他
- Organizer
  Intern. Workshop Nitride Semiconductor 2008
- Place of Presentation
  Montreux (Swiss)
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Time-resolved spectroscopy in an undoped GaN (1-101)2007
- Author(s)
  EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Organizer
  HCIS-15
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN2007
- Author(s)
  J.Saida, EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
- Organizer
  ICNS-7
- Place of Presentation
  Las Vegas
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] 加工シリコン基板上への半極性GaNの選択成長と物性2007
- Author(s)
  彦坂年輝、谷川智之、本田善央、山口雅史、澤木宣彦
- Organizer
  JSPS-162研究会
- Place of Presentation
  川口屋リバーサイドホテル
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Acceptor Level due to Carbon in a (1-101)AlGaN2006
- Author(s)
  N.Sawaki, N.Koide, T.Hikosaka, Y.Honda, and M.Yamaguchi
- Organizer
  28th ICPS
- Place of Presentation
  Wien
- Data Source
  KAKENHI-PROJECT-16106001
[Presentation] Improvement of crystalline quality of GaN on Si by an AlInN nucleation layer
- Author(s)
  T.Yagi, R.Tanabe, T.Kanematsu, H.Kobayashi, N.Sawaki, M.Irie, Y.Honda, and H.Amano
- Organizer
  ISPlasma 2015
- Place of Presentation
  Nagoya University(名古屋市千種区)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Demonstration of GaInN-based laser pumped by an electron beam
- Author(s)
  M. Iwaya, K. Kozaki, T. Yamada, T. Takeuchi, S. Kamiyama, I. Akasaki, Y. Honda, H. Amano, S. Iwayama, J. Matsuda, N. Matsubara, and T. Matsumoto
- Organizer
  International workshop on nitride semiconductors
- Place of Presentation
  ヴロツワフ/ポーランド
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (001)Si 基板上半極性面InGaN 光共振器の誘導放出特性
- Author(s)
  久志本　真希、本田善央、天野浩
- Organizer
  第75回　応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-16 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24686041
[Presentation] Effect of annealing on the defect related emission in GaN grown on Si substrate
- Author(s)
  H.Kobayashi, T.Yagi, R.Tanabe, T.Kanematsu,H.Iwata, N.Sawaki, M.Irie, Y.Honda, and H.Amano
- Organizer
  APWS 2015
- Place of Presentation
  The K Seoul Hotel (Seoul, Korea)
- Year and Date
  2015-05-17 – 2015-05-20
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] 炭素ドープ半極性(1-101)GaN の光学特性
- Author(s)
  小林宙主、澤木宣彦、山下康平、彦坂年輝、本田善央、天野浩
- Organizer
  平成26年電気電子情報関係学会東海支部連合大会
- Place of Presentation
  中京大学（名古屋市天白区）
- Year and Date
  2014-09-08 – 2014-09-09
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Optical spectra and yellow luminescence in C doped GaN
- Author(s)
  H.Kobayashi, N.Sawaki, K.Yamashitta, T.Hikosaka, Y.Honda, and H.Aman
- Organizer
  ISPlasma 2015
- Place of Presentation
  Nagoya University(名古屋市千種区)
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24656019
[Presentation] Resonant Raman and FTIR spectra of carbon doped GaN
- Author(s)
  S.Ito, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
- Organizer
  ICMOVPE 2014
- Place of Presentation
  EPFL(Lousanne, Swiss)
- Year and Date
  2014-07-13 – 2014-07-18
- Data Source
  KAKENHI-PROJECT-24656019

1. YAMAGUCHI Masahito (20273261)

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2. SAWAKI Nobuhiko (70023330)

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# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
32. 若林源一郎 (90311852)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
33. 加藤和利 (10563827)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
34. 前田辰郎 (40357984)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
35. 三上裕也 (80943662)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
36. 小林篤 (20470114)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
37. 前田拓也 (20965694)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
38. KUSHIMOTO Maki

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
39. LU SHUN

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
40. 大西一生

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
41. BAE Si-Young

# of Collaborated Projects: 0 results

# of Collaborated Products: 6 results
42. 畑中修平

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Honda Yoshio 本田 善央

HONDA Yoshio 本田 善央

Research Projects

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全窒化ガリウムパワー統合プラットフォームの開発に関する研究Principal Investigator

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Hetero-bipolar transistors with quaternary mixed AlGaInN polarized doping layersPrincipal Investigator

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High speed growth of pn junction by HVPE for fabrication of SJ diodPrincipal Investigator

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LD fabrication on semipolar GaN/Si by induced pressure InGaN growth and strain controlPrincipal Investigator

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Development of bridged nitride semiconductor nanowire LED on Si substratePrincipal Investigator

Honda Yoshio 本田善央

HONDA Yoshio 本田善央