• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

SAWAKI Nobuhiko  澤木 宣彦

ORCIDConnect your ORCID iD *help
… Alternative Names

澤木 宣彦  サワキ ノブヒコ

沢木 宣彦  サワキ ノブヒコ

澤木 宜彦  サワキ ノブヒコ

Less
Researcher Number 70023330
Other IDs
External Links
Affiliation (Current) 2025: 愛知工業大学, 工学部, 教授
Affiliation (based on the past Project Information) *help 2010 – 2014: 愛知工業大学, 工学部, 教授
2007 – 2008: Nagoya University, 大学院・工学研究科, 教授
2006: 名古屋大学, 大学院工学研究科, 教授
2004 – 2005: 名古屋大学, 大学院・工学研究科, 教授
1997 – 2004: 名古屋大学, 工学研究科, 教授 … More
1991 – 1996: 名古屋大学, 工学部, 教授
1989: 名古屋大学, 工学部, 教授
1987 – 1988: 名古屋大学, 工学部, 助教授
1986: Nagoya University, School of Engineering., 工学部, 助教授 Less
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / 電子材料工学 / Applied materials science/Crystal engineering / Science and Engineering / Applied optics/Quantum optical engineering
Except Principal Investigator
Electron device/Electronic equipment / 電子材料工学 / Science and Engineering / 表面界面物性
Keywords
Principal Investigator
トンネル効果 / フェムト秒分光 / GaN / 窒化物半導体 / 二重量子井戸 / 実空間遷移 / ホットエレクトロン / ホトルミネッセンス / 格子欠陥 / シリコン基板 … More / 選択成長 / 光非線形性 / 結合量子井戸 / 光変調器 / 量子井戸 / 電子波干渉 / ホトルミネセンス / 超格子 / GaAs / 励起子 / 量子細線 / 不純物散乱 / TEM / 光導波路 / 面間拡散 / 光デバイス / ファセット成長 / 不純物ドーピング / MOVPE / 光吸収 / 光変調 / 反交差現象 / 量子準位共鳴 / フォノン散乱 / エネルギー緩和 / 電子格子相互作用 / Real space transfer / Impurity scattering / Phonon scattering / Superlattice / Hetero-structure / Hot electron / Sub-micron electron device / 格子散乱 / ヘテロ接合 / サブミクロン電子デバイス / Quantum dot / HVPE / Surface diffusion / Growth on facets / Selective growth / Hetero-epitaxy / 異種基板 / 緩衝層 / 三族窒化物 / 伝導性制御 / ダブルヘテロ構造 / 量子ドット / HVPE法 / MOVPE法 / 表面拡散 / 選択成長法 / ヘテロエピタキシ / Quantum confined Stark effect / optical device / femto-second spectroscopy / optical nonlinearity / tunneling / coupled quantum wells / optical modulator / 準位共鳴 / 電子・正孔対 / ポンプ・プローブ法 / 非線形デバイス / イメージセンサ / field emitter / luminescence / off axis substrate / defects / quantum well / nano-structure / selective growth / III nitrides / 格子歪み / バンド端発光 / ナノメトール量子構造 / サブミクロン微細構造 / カソードルミネッセンス / フィールドエミッタ / ミネッセンス / 傾斜基板 / 微細構造 / Modulator / Exiton / Optical Absorption / Photoluminescence / Wave Mixing / Optical Nonlinearity / Resonance of Electronic States / Coupled Quantum Well / デルタドープ構造 / 電子波混合 / 量子準位共鳴効果 / TWO DIMENSIONAL ELECTRON GAS / FEMTOSECOND SPECTROSCOPY / PHONON SCATTERING / QUANTUM WIRE / TUNNELING / HOT ELECTRON / DOUBLE QUANTUM WELL / 薄膜多層構造 / フォトルミネッセンス / 二次元電子 / 二次元電子ガス / フォトルミネセンス / LOフォノン散乱 / 多重量子井戸 / ピエゾ電界 / トランスポート / 結晶欠陥 / 分極電荷 / pn接合 / ヘテロ構造 / 電界効果 / 炭素ドーピング / インパクトイオン化 / 黄色帯発光 / 格子空孔 / 分極電界 / ビルトイン電界効果 / 太陽電池 / FTIR評価 / TEM観察 / PL / 疑似格子整合 / MOVPE成長 / シリコンホトニクス / 遠赤外吸収スペクトル / 透過電子顕微鏡観察 / 有機金属気相成長 / 電子線ホログラフィー / 界面構造 / Si基板 / 時間分解分光 / ナノヘテロ構造 / ナノへテロ構造 / p-i構造 / 多波光制御 / 量子閉込めシュタルク効果 / 光透過 / キャリア寿命 / フェトム秒分光 / 光制御 / 光非線刑性 / 非対称結合量子井戸 / クーロンブロッケード / 結合ドット / 表面プラズモン、 / パーコレーション / 電子波束 / 微小FET / 神経回路網 / メゾスコピック / 波動関数の局在・非局在 / 界面凹凸散乱 / 飛行時間法 / トランジスタ / 電子・格子相互作用 / 二重量子井戸構造 … More
Except Principal Investigator
Si_3N_4 / MISHEMT / GaN HEMT / バッファ層 / MOVPE / GaN / ナノ構造 / 単電子デバイス / gate leakage current / inclined gate recess / HfO_2 / current DLTS / breakdown voltage / GaN MISHEMT / 電位測定 / KFM / 高誘電率膜 / 電流コラプス / GaN MISHEM / 深い準位 / DLTS / MBE / フッ素プラズマ処理 / ノーマリオフ型 / 傾斜リセス構造 / 電子速度 / ゲートリーク電流 / 傾斜リセス / ZrO_2 / 電流DLTS / 耐圧 / high-density intgration / atomic-scale control / quantum devices / quantum dot / tunnel barrier / surfaces and interfaces / nanostructure / Single electron devices / 高密度集積化 / 原子スケール制御 / 量子デバイス / 量子ドット / トンネル障壁 / 表面・界面 / カソードルミネッセンス / MIS構造 / Zn添加 / 青色LED / A1GaN / 多層構造 / p形GaN / Mg添加 / カソ-ドルルミネッセンス / pn接合形青色LED / GaAlN / 不純物 / 混晶半導体 / ホトルミネセンス / 有機金属化学気相法 / 気相成長 / 青色発光 / ワイドギャップ半導体 / 無極性 / 半極性 / InGaN / Si基板 / 半極性・非極性 / 選択成長 / トンネル現象 / 量子現象 / 集積回路 / クーロンブロッケード / 単電子トランジスタ Less
  • Research Projects

    (23 results)
  • Research Products

    (100 results)
  • Co-Researchers

    (22 People)
  •  A high efficiency III nitride solar cell with graded composition top layerPrincipal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Aichi Institute of Technology
  •  Growth of high quality GaN on an Si substratePrincipal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Aichi Institute of Technology
  •  加工Si基板上(1-101)及び(11-22)GaNへのInGaNヘテロ成長

    • Principal Investigator
      本田 善央
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Nagoya University
  •  Selective epitaxial growth of nitride nano-hetero structures on patterned silicon substratePrincipal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      2004 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya University
  •  Fabrication and Characterization of High-Breakdown and High-Power GaN HEMTs

    • Principal Investigator
      MIZUTANI Takashi
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Nagoya University
  •  結合多重量子井戸構造による多波光制御に関する研究Principal Investigator

    • Principal Investigator
      澤木 宣彦
    • Project Period (FY)
      2002
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Nagoya University
  •  結合多重量子井戸構造による多波光制御に関する研究Principal Investigator

    • Principal Investigator
      沢木 宣彦
    • Project Period (FY)
      2001
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Review Section
      Science and Engineering
    • Research Institution
      Nagoya University
  •  SELECTIVE GROWTH OF III-NITRIDE MICROSTRUCTURES ON SILICON SUBSTRATEPrincipal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      NAGOYA UNIVERSITY
  •  半導体結合量子ドット構造による疑似神経回路網の作製Principal Investigator

    • Principal Investigator
      澤木 宣彦
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  Selective Growth of GaN pyramids and study of their optical and electronic propertiesPrincipal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      NAGOYA UNIVERSITY
  •  Non-linear optical devices utilizing triply coupled asymmetric GaAs quantum wellsPrincipal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      NAGOYA UNIVERSITY
  •  二重量子井戸構造における電子波干渉効果Principal Investigator

    • Principal Investigator
      澤木 宣彦
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  "Control of surface and interfaces of nano-structures for single electron devices"

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1996 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  二重量子井戸構造における電子波干渉効果Principal Investigator

    • Principal Investigator
      澤木 宣彦
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  単電子ナノエレクトロニクスの基礎

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Hokkaido University
  •  二重量子井戸構造における電子波干渉効果Principal Investigator

    • Principal Investigator
      澤木 宣彦
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  Resonance of Electronic States and Optical Non-linearity in Coupled Quantum Well StructuresPrincipal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      1993 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      NAGOYA UNIVERSITY
  •  Tunneling Phenomena in GaAs/AlGaAs Double Quantum Well StructuresPrincipal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      NAGOYA UNIVERSITY
  •  GaAs/ALGaAs 二重量子井戸構造のホットエレクトロン効果に関する研究Principal Investigator

    • Principal Investigator
      澤木 宣彦
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Nagoya University
  •  半導体超格子のホットエレクトロン効果に関する研究Principal Investigator

    • Principal Investigator
      澤木 宣彦
    • Project Period (FY)
      1987
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Nagoya University
  •  高エネルギーギャップ半導体の結晶成長と光学的性質に関する研究

    • Principal Investigator
      赤崎 勇
    • Project Period (FY)
      1987
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  高性能GaN系青色LEDの試作研究

    • Principal Investigator
      赤崎 勇
    • Project Period (FY)
      1987 – 1989
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      電子材料工学
    • Research Institution
      Nagoya University
  •  Study of hot electron effect in sub-micron semiconductor devices.Principal Investigator

    • Principal Investigator
      SAWAKI Nobuhiko
    • Project Period (FY)
      1985 – 1986
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      NAGOYA UNIVERSITY

All 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] Integration with silicon based microelectronics2011

    • Author(s)
      J.Li, J.Y.Lin, H.X.Jiang, and N.Sawaki, CRC Press (Taylor & Francis Group)
    • Total Pages
      593
    • Publisher
      III-V compound semiconductors;
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Resonant Raman and FTIR spectra of carbon doped GaN2015

    • Author(s)
      S.Ito, H.Kobayashi, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
    • Journal Title

      J. Crystal Growth

      Volume: 414 Pages: 56-61

    • DOI

      10.1016/j.jcrysgro.2014.11.024

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Journal Article] Nature of yellow luminescence band in GaN grown on Si substrate2014

    • Author(s)
      S.Ito, T.Nakakita, N.Sawaki, M.Irie, T.Hikosaka, Y.Honda, M.Yamaguchi, and H.Amano
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 11S Pages: 11RC02-11RC02

    • DOI

      10.7567/jjap.53.11rc02

    • NAID

      210000144631

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Journal Article] Defect generation and annihilation in GaN grown on patterned silicon substrate2013

    • Author(s)
      N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Journal Title

      Proc. SPIE

      Volume: 8625 Pages: 6-6

    • DOI

      10.1117/12.2002738

    • Data Source
      KAKENHI-PROJECT-22360009, KAKENHI-PROJECT-24656019
  • [Journal Article] Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy2013

    • Author(s)
      J.Y.Kim, G.S.Lee, S.G.Jung, M.A.Park, M.J.Shin, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S.W.Kim, H.S.Lee, H.S.Kang, H.S.Jeon, and N.Sawaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 11S Pages: 11NG03-11NG03

    • DOI

      10.7567/jjap.52.11ng03

    • NAID

      210000143121

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Journal Article] Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots2013

    • Author(s)
      M.Kim, M.J.Shin, D.Gwon, H.S.Ahn, S.N.Yi, P.S.Kim, S.C.Yoon, C.Lee, J.Park, K.Shin, D.H.Ha, and N.Sawaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 1S Pages: 01AD02-01AD02

    • DOI

      10.7567/jjap.52.01ad02

    • NAID

      210000141765

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Journal Article] Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate2012

    • Author(s)
      T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, N.Sawaki
    • Journal Title

      phys.stat.sol.(b)

      Volume: 249 Issue: 3 Pages: 468-471

    • DOI

      10.1002/pssb.201100445

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-10J08362, KAKENHI-PROJECT-22360009
  • [Journal Article] Fabrication of AlGaN-based vertical light-emitting diodes2012

    • Author(s)
      S.M.Bae, H.S.Jeon, G.S.Lee, S-G.Jung, K.H.Kim, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S-W.Kim, S.H.Cheon, H-J.Ha and N.Sawaki
    • Journal Title

      J. Ceramic Processing Research

      Volume: 13

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Journal Article] Impurity incorporation in semipolar (1-101)GaN grown on Si substrate2012

    • Author(s)
      N.Sawaki, K.Hagiwara, T.Hikosaka, and Y.Honda
    • Journal Title

      Semiconductor Science & Technology

      Volume: 27 Issue: 2 Pages: 5-5

    • DOI

      10.1088/0268-1242/27/2/024006

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Characterization of GaN on GaN LED by HVPE method2012

    • Author(s)
      S-G.Jung, H.S.Jeon, G.S.Lee, S.M.Bae, K-H.Kim, S.N.Yi, M.Yang, H.S.Ahn, Y.M.Yu, S-W.Kim, S.H.Cheon, H.J.Ha and N.Sawaki
    • Journal Title

      J. Ceramic Processing Research

      Volume: 13

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Journal Article] High efficiency InGaN solar cell with a graded p-InGaN top layer2012

    • Author(s)
      N.Sawaki, T.Fujisawa
    • Journal Title

      Proc.of SPIE

      Volume: 8262 Pages: 826210-826210-7

    • DOI

      10.1117/12.905531

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] A local vibration mode in a carbon doped (1-101)AlGaN2012

    • Author(s)
      N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
    • Journal Title

      Proc. SPIE

      Pages: 7-7

    • DOI

      10.1117/12.905529

    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Nitride LEDs on Si substrate2011

    • Author(s)
      N.Sawaki and Y.Honda
    • Journal Title

      Science China Technological Sciences

      Volume: 54 Issue: 1 Pages: 38-41

    • DOI

      10.1007/s11431-010-4182-2

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Nitride LEDs on Si substrate2011

    • Author(s)
      N.Sawaki
    • Journal Title

      Science China

      Volume: 54 Pages: 38-41

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates2011

    • Author(s)
      I.W.Feng, X.K.Cao, J.Li, J.Y.Lin,H.X.Jiang, N.Sawaki, Y.Honda,T.Tanikawa, and J.M.Zavada
    • Journal Title

      Appl. Phys. Lett.

      Volume: 98 Issue: 8 Pages: 3-3

    • DOI

      10.1063/1.3556678

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Drastic reduction of dislocation density in semipolar (11-22)GaN stripe crystal on silicon substrate by dual selective metal-organic vapor phase epitaxy2011

    • Author(s)
      T.Murase, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50 Issue: 1S1 Pages: 01AD04-01AD04

    • DOI

      10.1143/jjap.50.01ad04

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Reduction of efficiency droop in semipolar (1101)InGaN/GaN light emitting diodes grown on patterned silicon substrates2011

    • Author(s)
      C.H.Chiu, T.Tanikawa, N.Sawaki, 他
    • Journal Title

      Appl.Phys.Express

      Volume: 4 Issue: 1 Pages: 012105-012105

    • DOI

      10.1143/apex.4.012105

    • NAID

      10027782333

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (1-101) semi-polar GaN2011

    • Author(s)
      Z.H.Wu, T.Tanikawa, T.Murase, Y.Y.Fang, C.Q.Chen, Y.Honda, M.Yamaguchi, H.Amano, and N.Sawaki
    • Journal Title

      Appl. Phys. Lett.

      Volume: 98 Issue: 5 Pages: 98-98

    • DOI

      10.1063/1.3549561

    • Year and Date
      2011-01-31
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] HVPE growth of a-plane GaN on a GaN template (110)Si substrate2010

    • Author(s)
      T.Tanikawa, N.Suzuki, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Journal Title

      physica status solidi C

      Volume: 7 Issue: 7-8 Pages: 1760-1763

    • DOI

      10.1002/pssc.200983563

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Journal Article] Growth and properties of semi-polar GaN on a patterned silicon substrate2009

    • Author(s)
      N. Sawaki, T. Hikosaka, N. Koide, Y. Honda, M. Yamaguchi and T. Tanaka
    • Journal Title

      J. Crystal Growth Online 14 Jan. doi.10.1016

      Pages: 1-8

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Growth of semi-polar (11-22)GaN on a (113)Si substrate by selective MOVPE2008

    • Author(s)
      T.Tanikawa, T.Hikosaka, Y.Honda, M.Yamaguchi and N.Sawaki
    • Journal Title

      phys. sta. sol.(c) 5

      Pages: 2966-2968

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Fabrication and properties of semi- polar (1-101) and (11-22)InGaN/GaN MQW light emitting diode on patterned Si substrates2008

    • Author(s)
      T.Hikosaka, T.Tanikawa, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Journal Title

      phys. sta. sol.(c) 5

      Pages: 2234-2237

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Selective MOVPE of III-nitrides and device fabrication on an Si substrate2008

    • Author(s)
      N. Sawaki
    • Journal Title

      Proc. SPIE 7279

      Pages: 727902-727902

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Growth of non-polar (11-20)GaN on a patterned (110)Si substrate by selective MOVPE2008

    • Author(s)
      T.Tanikawa, D.Rudolph, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Journal Title

      J.Crystal Growth 310

      Pages: 4999-5002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Al doping in (1-101)GaN films grownon patterned (001)Si substrate2007

    • Author(s)
      T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki, J
    • Journal Title

      Appl. Phys 101.103513

      Pages: 1-5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Acceptor Level due to Carbon in a (1-101) AIGaN2007

    • Author(s)
      N. Sawaki, 他
    • Journal Title

      AIP Conf. Proc. 893(CD-ROM)

      Pages: 281-281

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Series resistance of n-Si/AlGaN/GaN structure grown by MOVPE2007

    • Author(s)
      Y.Honda, S.Kato, M.Yamaguchi, and N.Sawaki
    • Journal Title

      phys. stat. sol 4

      Pages: 2740-2743

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN hetero- structures2007

    • Author(s)
      X.X.Han, Y.Honda, T.Narita, M.Yamaguchi, and N.Sawaki, J
    • Journal Title

      Phys.: Condens. Matter 19, 046204

      Pages: 1-11

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Mg doping in (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE2007

    • Author(s)
      T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Journal Title

      J.Crystal Growth 298

      Pages: 207-210

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Cathodoluminescence Properties of InGaN codoped with Zn and Si2006

    • Author(s)
      Y.Honda, Y.Yanase, M.Yamaguchi, N.Sawaki
    • Journal Title

      phys. stat. sol. (c) 3・6

      Pages: 1915-1918

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Carbon Incorporation on (1 101) Facet of A1GaN in Metal Organic Vapor Phase Epitaxy2006

    • Author(s)
      N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
    • Journal Title

      Jap. J. Appl. Phys. 45・10A

      Pages: 7655-7660

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] The surface diffusion of Ga on an A1GaN/GaN stripe structure in the selective MOVPE2006

    • Author(s)
      T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
    • Journal Title

      phys. stat. sol. (b) 243・7

      Pages: 1665-1668

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented(001)Si substrate by selective MOVPE2006

    • Author(s)
      T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Journal Title

      phys. stat.sol 3

      Pages: 1425-1428

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Optical phonon-modes and electron-phonon interaction in a quantum dot2006

    • Author(s)
      M.Ishidal, M.Yamaguchi, N.Sawaki
    • Journal Title

      Springer Proceedings in Physics Series 110

      Pages: 253-256

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure2006

    • Author(s)
      H.Kondo, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
    • Journal Title

      Jap. J. Appl. Phys. 45・5A

      Pages: 4015-4017

    • NAID

      40007248571

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] p-type conduction in a C-doped (1-101) GaN grown on a 7-degree-off oriented (001) Si substrate by selective MOVPE2006

    • Author(s)
      T.Hikosaka, N.Koide, Y.Honda, M.Yamaguchi, N.Sawaki
    • Journal Title

      phys. stat. sol. (c) 3・6

      Pages: 1425-1428

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005

    • Author(s)
      T.Narita, Y.Honda, M.Yamaguchi, N.Sawaki
    • Journal Title

      Physica Stata Solidi 2

      Pages: 2349-2352

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Growth and optical properties of InGaN/GaN quantum well on a (1-101) facet2005

    • Author(s)
      T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Journal Title

      phys. stat. sol 2

      Pages: 2349-2352

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Effect of Si doping to the (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE2005

    • Author(s)
      T.Hikosaka, Y.Honda, N.Koide, M.Yamaguchi, N.Sawaki
    • Journal Title

      IOP Conf.Series 184

      Pages: 251-254

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Incorporation of carbon on a (1-101)facet of GaN by MOVPE2005

    • Author(s)
      N.Koide, T.Hikosaka, Y.Honda, M.Yamaguchi, N.Sawaki
    • Journal Title

      J.Cryst.Growth 284

      Pages: 341-346

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Uniform growth of GaN on AlN templated (111)Si substrate by HVPE2005

    • Author(s)
      Y.Honda, M.Okano, M.Yamaguchi, N.Sawaki
    • Journal Title

      Physica Stata Solidi 2

      Pages: 2125-2128

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Electrical and optical properties of (1-101)GaN grown on a 7 degree off oriented (001) Si by selective MOVPE2004

    • Author(s)
      N.Sawaki
    • Journal Title

      Proc. 5th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipment

      Pages: 30-35

    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Optical and electrical properties of (1-101)GaN grown on a 7°off-axis (001)Sisubstrate2004

    • Author(s)
      T.Hikosaka, T.Narita, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Journal Title

      Appl. Phys. Lett 84

      Pages: 4717-4719

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Journal Article] Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN2003

    • Author(s)
      K.Kumada, T.Murata, Y.Ohno, S.Kishimoto, K.Maezawa, T.Mizutani, N.Sawaki
    • Journal Title

      Jpn.J.Appl.Phys. Vol.42,Part 1,No.4B

      Pages: 2250-2253

    • NAID

      10010801569

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15206040
  • [Patent] 窒化物半導体構造およびその製造方法2007

    • Inventor(s)
      澤木宣彦、本田善央、彦坂年輝、谷川智之
    • Industrial Property Rights Holder
      国立大学法人名古屋大学
    • Filing Date
      2007-06-07
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] FTIR spectra in a heavily carbon doped (0001)GaN2014

    • Author(s)
      K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
    • Organizer
      ISPlasma2014
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Nature of yellow luminescence band in high quality GaN2014

    • Author(s)
      S.Ito, T.Nakakita, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      ISPlasma2014
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013

    • Author(s)
      T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      ISPlasma 2013
    • Place of Presentation
      Nagoya (Japan)
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] TEM analyses of GaN grown with AlInN intermediate layer on Si substrate2013

    • Author(s)
      S.Ito, T.Nakagita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      ISPlasam 2013
    • Place of Presentation
      Nagoya.
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate2013

    • Author(s)
      K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      ISPlasma 2013
    • Place of Presentation
      Nagoya (Japan)
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Epitaxial relationship and nano-structures at GaN/Si interface2013

    • Author(s)
      N.Sawaki
    • Organizer
      EMN2013- Open Access 2013
    • Place of Presentation
      Chengdu
    • Invited
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013

    • Author(s)
      N.Sawaki, S.Ito, T.Nakagita, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      SPIE Photonics West 2013, Feb. 4
    • Place of Presentation
      San Francisco (USA).
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] FTIR analyses of carbon doped (1-101)GaN grown on a patterned Si substrate2013

    • Author(s)
      K.Hagiwara, N.Sawaki, K.Yamashita, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      ISPlasma 2013
    • Place of Presentation
      Nagoya.
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Coalescence and generation of stacking faults in a (1-101)GaN grown on a patterned (001)Si substrate2013

    • Author(s)
      T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      6th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Taipei
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013

    • Author(s)
      N.Sawaki, T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      SPIE Photonics West 2013
    • Place of Presentation
      San Francisco (USA)
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] 半極性(1-101)GaN における積層欠陥の振る舞い2013

    • Author(s)
      中北太平、伊藤翔悟、岩田博之、澤木宣彦、本田善央、山口雅史、天野浩
    • Organizer
      電気関係学会東海支部学術講演会
    • Place of Presentation
      静岡大学
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Growth of high quality GaN on (111)Si using AlN:In nucleation layer2013

    • Author(s)
      S.Ito, T.Nakagita, S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      6th Asia-Pacific Workshop on Widegap Semiconductors
    • Place of Presentation
      Taipei
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] nda, M.Yamaguchi, and H.Amano, "Defect structure in a (1-101)GaN grown on a patterned (001)Si substrate2013

    • Author(s)
      T.Nakagita, S.Ito, H.Iwata, N.Sawaki, T.Tanikawa, Y.Ho
    • Organizer
      ISPlasma 2013
    • Place of Presentation
      Nagoya.
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Si基板上GaN/AlInNエピタキシャル膜のPLスペクトル2013

    • Author(s)
      伊藤翔悟、中北太平、澤木宣彦、入江将嗣、本田善央、山口雅史、天野浩
    • Organizer
      電気関係学会東海支部学術講演会
    • Place of Presentation
      静岡大学
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] A high efficiency InGaN solar cell with graded composition p-InGaN top layer2013

    • Author(s)
      T.Fujisawa and N.Sawaki,
    • Organizer
      ISPlasama 2013
    • Place of Presentation
      Nagoya (Japan)
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Defect generation and annihilation in GaN grown on patterned silicon substrate2013

    • Author(s)
      N.Sawaki, T.Nakagita, S.Ito, H.Iwata, T.Tanikawa, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      SPIE-OPTO 2013
    • Place of Presentation
      San Francisco (USA)
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012

    • Author(s)
      S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      International Workshop on NitrideSemiconductors
    • Place of Presentation
      Sapporo.
    • Year and Date
      2012-10-18
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE2012

    • Author(s)
      S.Kawakita, N.Sawaki, 他
    • Organizer
      ISPlasma 2012
    • Place of Presentation
      Kasugai, Aichi, Japan
    • Year and Date
      2012-03-07
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] A local vibration mode in a carbon doped (1-101)AlGaN2012

    • Author(s)
      N.Sawaki, K.Hagiwara, 他
    • Organizer
      SPIE Photonics West 2012
    • Place of Presentation
      SanFrancisco, CA, USA
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] TEM analyses of GaN grown on (111)Si substrate via an AlInN intermediate layer2012

    • Author(s)
      S.Kawakita, H.Iwata, T.Nakagita, S.Ito, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      Sapporo (Japan)
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate2012

    • Author(s)
      K.Hagiwara, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      ISPlasma 2012
    • Place of Presentation
      Kasugai.
    • Year and Date
      2012-03-06
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] 傾斜組成トップ層によるInGaN太陽電池の高効率化2012

    • Author(s)
      藤澤知樹,澤木宣彦
    • Organizer
      電気関係学会東海支部学術講演会
    • Place of Presentation
      豊橋市、日本
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] A local vibration mode in a carbon doped (1-101)AlGaN2012

    • Author(s)
      N.Sawaki, K.Hagiwara, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      SPIE Photonics West 2012
    • Place of Presentation
      San Francisco (USA).
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] HRTEM analyses of GaN/AlInN/(111)Si grown by MOVPE2012

    • Author(s)
      S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      ISPlasam 2012
    • Place of Presentation
      Kasugai.
    • Year and Date
      2012-03-07
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Carbon related local vibration mode in a (1-101)AlGaN grown on a (111)Si substrate2012

    • Author(s)
      K.Hagiwara, N.Sawaki, 他
    • Organizer
      ISPlasma 2012
    • Place of Presentation
      Kasugai, Aichi, Japan
    • Year and Date
      2012-03-06
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] TEM analyses of high-quality GaN grown on (111)Si using an AlInN intermediate layer2011

    • Author(s)
      S.Kawakita, H.Iwata, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      ISPlasma
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Growth and properties of semipolar GaN on patterned Si substrate2011

    • Author(s)
      N.Sawaki
    • Organizer
      DPG Spring Meetings, Deutsche Physikalische Gesellschaft
    • Place of Presentation
      Dresden, Germany
    • Year and Date
      2011-03-17
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Strain relaxation in thick (1-101) InGaN grown on GaN/Si substrate2011

    • Author(s)
      T.Tanikawa, N.Sawaki, 他
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Grasgow, UK
    • Year and Date
      2011-07-12
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer2011

    • Author(s)
      S.Kawakita, H.Iwata, D.Kato, T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
    • Place of Presentation
      Toba.
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] High-quality GaN grown on (111)Si using an AlInN intermediate layer2011

    • Author(s)
      S.Kawakita, N.Sawaki, 他
    • Organizer
      Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Growth, characterization, and crystallographic orientation of overgrown GaN layers on nanostructures by HVPE2011

    • Author(s)
      M.J.Kim, M.J.Shin, N.Sawaki, 他
    • Organizer
      9th Intern.Conf.on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Grasgow, UK
    • Year and Date
      2011-07-13
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate2011

    • Author(s)
      K.Hagiwara, R.Katayama, M.Amano, N.Sawaki, N.Koide, Y.Honda, M.Yamaguchi, and H.Amano
    • Organizer
      Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
    • Place of Presentation
      T.Tachibana, Y.Tani, T.Nakajima, N.Sawaki, M.Irie, Y.Honda, M.Yamaguchi, and H.Amano, "High-quality GaN grown on (111)Si using an AlInN intermediate layer," Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011), May 23 (2011), Toba.
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] FTIR spectra and LVMs in a carbon doped (1-101)GaN grown on a (001)Si substrate by MOVPE," ISPlasma2011

    • Author(s)
      K.Hagiwara, M.Amano, R.Katayama, N.Sawaki, Y.Honda, T.Hikosaka, T.Tanikawa, N.Koide, M.Yamaguchi, and H.Amano
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Growth and properties of semipolar GaN on patterned Si substrate2011

    • Author(s)
      N.Sawaki
    • Organizer
      DPG Spring Meetings, Deutsche Physikalische Gesellschaft
    • Place of Presentation
      Dresden (Germany).
    • Year and Date
      2011-05-17
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Local vibration modes in a carbon doped (1-101)AlGaN grown on a (111)Si substrate2011

    • Author(s)
      K.Hagiwara, N.Sawaki, 他
    • Organizer
      Asia-Pacific Workshop on Widegap Semiconductors (APWS-2011)
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-25
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Nitride LEDs on Si substrate2010

    • Author(s)
      N.Sawaki
    • Organizer
      ISSLED-8
    • Place of Presentation
      Beijing、China
    • Year and Date
      2010-05-20
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] 加工シリコン基板上への窒化物半導体選択ヘテロエピタキシ2010

    • Author(s)
      澤木宣彦
    • Organizer
      仙台結晶成長学会バルク結晶分科会研究会
    • Place of Presentation
      東北大学、仙台市
    • Year and Date
      2010-06-18
    • Data Source
      KAKENHI-PROJECT-22360009
  • [Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate (Invited)2008

    • Author(s)
      N.Sawaki, T.Hikosaka, N.Koide, Y.Honda, and Yamaguchi
    • Organizer
      ISGN-2
    • Place of Presentation
      Izu
    • Year and Date
      2008-07-09
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Compound semiconductors- The crystal growth and creation of new functions-2008

    • Author(s)
      N. Sawaki
    • Organizer
      27 th Electronic Materials. Symposium
    • Place of Presentation
      Izu (Japan)
    • Year and Date
      2008-07-09
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Compound semiconductors- The crystal growth and creation of new functions-(Plenary)2008

    • Author(s)
      N.Sawaki
    • Organizer
      EMS-27
    • Place of Presentation
      Izu
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Growth and properties of semi-polar GaN on a patterned silicon substrate2008

    • Author(s)
      N. Sawaki, 他
    • Organizer
      2nd Intern. Symp. Growth of Nitrides
    • Place of Presentation
      Izu (Japan)
    • Year and Date
      2008-07-08
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Selective MOVPE of III-nitrides and device fabrication on an Si substrate2008

    • Author(s)
      N.Sawaki, N.Sawaki
    • Organizer
      POEM2008
    • Place of Presentation
      Wuhan
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Time-resolved spectroscopy in an undoped GaN (1-101)2007

    • Author(s)
      EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Organizer
      HCIS-15
    • Place of Presentation
      Tokyo
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] 窒化物半導体材料とデバイスの将来展望(プレナリー)2007

    • Author(s)
      澤木宣彦
    • Organizer
      SiCおよび関連ワイドギャップ半導体研究会
    • Place of Presentation
      愛知県女性総合センター
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001)GaN and (1-101)GaN2007

    • Author(s)
      J.Saida, EH.Kim, T.Hikosaka, Y.Honda, M.Yamaguchi, and N.Sawaki
    • Organizer
      ICNS-7
    • Place of Presentation
      Las Vegas
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] 加工シリコン基板上への半極性GaNの選択成長と物性2007

    • Author(s)
      彦坂年輝、谷川智之、本田善央、山口雅史、澤木宣彦
    • Organizer
      JSPS-162研究会
    • Place of Presentation
      川口屋リバーサイドホテル
    • Year and Date
      2007-12-10
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Energy relaxation process of photo-generated carriers in Mg doped (0001) GaN and (1-101) GaN2007

    • Author(s)
      N. Sawaki, 他
    • Organizer
      7 th Intern. Conf. on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas (USA)
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] 窒化物半導体材料とデバイスの将来展望2007

    • Author(s)
      澤木宣彦
    • Organizer
      第17回SiCおよび関連ワイドギャップ半導体研究会
    • Place of Presentation
      愛知県女性総合センター
    • Year and Date
      2007-11-29
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Acceptor Level due to Carbon in a (1-101)AlGaN2006

    • Author(s)
      N.Sawaki, N.Koide, T.Hikosaka, Y.Honda, and M.Yamaguchi
    • Organizer
      28th ICPS
    • Place of Presentation
      Wien
    • Data Source
      KAKENHI-PROJECT-16106001
  • [Presentation] Improvement of crystalline quality of GaN on Si by an AlInN nucleation layer

    • Author(s)
      T.Yagi, R.Tanabe, T.Kanematsu, H.Kobayashi, N.Sawaki, M.Irie, Y.Honda, and H.Amano
    • Organizer
      ISPlasma 2015
    • Place of Presentation
      Nagoya University(名古屋市千種区)
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Effect of annealing on the defect related emission in GaN grown on Si substrate

    • Author(s)
      H.Kobayashi, T.Yagi, R.Tanabe, T.Kanematsu,H.Iwata, N.Sawaki, M.Irie, Y.Honda, and H.Amano
    • Organizer
      APWS 2015
    • Place of Presentation
      The K Seoul Hotel (Seoul, Korea)
    • Year and Date
      2015-05-17 – 2015-05-20
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Characteristics of high-quality AlN thick film grown on c-sapphire substrates by HVPE method

    • Author(s)
      G.S.Lee, H.S.Jeon, C.M.Lee, C.B.Lee, S.N.Yi, M.Yang, H.S.Ahn, S.W.Kim, Y.M.Yu, and N.Sawaki
    • Organizer
      ISPlasma 2015
    • Place of Presentation
      Nagoya University(名古屋市千種区)
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] 炭素ドープ半極性(1-101)GaN の光学特性

    • Author(s)
      小林宙主、澤木宣彦、山下康平、彦坂年輝、本田善央、天野浩
    • Organizer
      平成26年電気電子情報関係学会東海支部連合大会
    • Place of Presentation
      中京大学(名古屋市天白区)
    • Year and Date
      2014-09-08 – 2014-09-09
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Optical spectra and yellow luminescence in C doped GaN

    • Author(s)
      H.Kobayashi, N.Sawaki, K.Yamashitta, T.Hikosaka, Y.Honda, and H.Aman
    • Organizer
      ISPlasma 2015
    • Place of Presentation
      Nagoya University(名古屋市千種区)
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-24656019
  • [Presentation] Resonant Raman and FTIR spectra of carbon doped GaN

    • Author(s)
      S.Ito, K.Araki, K.Suzuki, N.Sawaki, K.Yamashita, Y.Honda, and H.Amano
    • Organizer
      ICMOVPE 2014
    • Place of Presentation
      EPFL(Lousanne, Swiss)
    • Year and Date
      2014-07-13 – 2014-07-18
    • Data Source
      KAKENHI-PROJECT-24656019
  • 1.  YAMAGUCHI Masahito (20273261)
    # of Collaborated Projects: 8 results
    # of Collaborated Products: 26 results
  • 2.  AKASAKI Isamu (20144115)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 3.  HONDA Yoshio (60362274)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 62 results
  • 4.  GOTO Hideo (00195942)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 5.  HASEGAWA Hideki (60001781)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  SUGANO Takuo (50010707)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 7.  TANAKA Shigeyasu (70217032)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 1 results
  • 8.  平松 和政 (50165205)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  安 亨洙 (40303672)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 10.  IWATA Hiroyuki (20261034)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 11 results
  • 11.  KOMA Atsushi (00010950)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  IWAMI Motohiro (80029123)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  YASUDA Yukio (60126951)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  MIZUTANI Takashi (70273290)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 15.  KISHIMOTO shigeru (10186215)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 16.  OHNO Yutaka (10324451)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 17.  川辺 光央 (80029446)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  榊 裕之 (90013226)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  川村 清 (00011619)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  天野 浩 (60202694)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 21.  SUZUKI Takamasa
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  橋本 雅文
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

URL: 

Are you sure that you want to link your ORCID iD to your KAKEN Researcher profile?
* This action can be performed only by the researcher himself/herself who is listed on the KAKEN Researcher’s page. Are you sure that this KAKEN Researcher’s page is your page?

この研究者とORCID iDの連携を行いますか?
※ この処理は、研究者本人だけが実行できます。

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi