HIJIKATA Yasuto 土方泰斗

Researcher Number	70322021
Other IDs	https://orcid.org/0000-0002-6314-0401
External Links
Affiliation (Current)	2024: 埼玉大学, 情報メディア基盤センター, 准教授
Affiliation (based on the past Project Information) *help	2023 – 2024: 埼玉大学, 情報メディア基盤センター, 准教授 2009 – 2023: 埼玉大学, 理工学研究科, 准教授 2014: 埼玉大学, 大学院理工学研究科, 准教授 2011: 埼玉大学, 大学院・理工学研究科, 准教授 2006: Saitama University, Graduate School of Science and Engineering, Associate Professor, 大学院理工学研究科, 助教授 … More 2006: 埼玉大学, 理工学研究科, 助教授 2005: 埼玉大学, 工学部, 助手 2001 – 2002: 埼玉大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 21:Electrical and electronic engineering and related fields Except Principal Investigator Applied materials science/Crystal engineering / Medium-sized Section 21:Electrical and electronic engineering and related fields / Crystal engineering / Electronic materials/Electric materials
Keywords	Principal Investigator 炭化ケイ素(SiC)半導体 / MOS界面 / 単一光子源 / 炭化ケイ素(SiC) / 炭化ケイ素 / 炭化ケイ素半導体 / 円偏光 / スピン電流注入 / 単一光子源(SPS) / 偏光 … More / スピン電流 / 量子暗号通信 / もつれ光子対 / アレイ化 / 透明電極膜 / 紫外光応答 / 反転層形成 / 可視光応答 / 光応答 / 半導体物性 / 放射線 / 電子・電気材料 / フォトリソグラフィー / 埋め込みチャネル構造 / バンドギャップ / 電荷輸送 / 放射線耐性 / イオン注入 / 埋込チャネル構造 / 界面準位密度 / MOSキャパシタ / ガンマ線照射効果 / CCD / 分光偏光解析 / フォトルミネッセンス / SiおよびC原子放出現象 / 酸化界面 / 転位 / 積層欠陥 / 熱酸化 / 超精密計測 / モニタリング / 低消費電力・高エネルギー密度 / デバイス設計・製造プロセス / 赤外材料・素子 / テラヘルツ … More Except Principal Investigator 光物性 / SiC / 界面 / 結晶工学 / 単一光子 / 半導体物性 / DFT / 等電子トラップ / MBE、エピタキシャル / 応用光学・量子光工学 / エピタキシャル / 移動度キラー / SiC-MOS / 局在 / 電子状態計算 / 量子コンピュータ / 界面欠陥 / 密度汎関数理論 / 第一原理計算 / 酸化 / ダングリングボンド / Pbcセンタ / 点欠陥 / α-Ga2O3 / 移動度 / SiC/SiO2 / 単一光子光源 / 欠陥 / 量子エレクトロニクス / 放射線 / 格子欠陥 / 量子センシング / isoelectronic trap / single photon / optical properties / advanced functional device / light source technology / crystal engineering / epitaxial / 先端機能デバイス / 光源技術 / infrared reflectance spectroscopy / ultraviolet photoemission spectroscopy / x-ray photoemission spectroscopy / spectropic ellipsometry / interface / oxide films / IV semiconductors / 分光エリプソメトリ / 赤外反射分光 / 紫外光電子分光 / X線光電子分光 / 分光偏光解析 / 酸化膜 / 炭化珪素(SiC) / IV族半導体 / 原子層ドーピング / 励起子分子 / 応用光学・量子光光学 / 量子もつれ光子対 / 量子光学 / エピタキシャル成長 / 半導体 / MBE,エピタキシャル / 応用光学・量子光工学MBE Less

Realization of an entangled photon-pair emitting device using silicon carbide semiconductorPrincipal Investigator
- Principal Investigator
  
  土方泰斗
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Saitama University
Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS devicePrincipal Investigator
- Principal Investigator
  
  土方泰斗
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Saitama University
Elucidation of SiC-MOS interfaces by developing electronic structure calculation methods
- Principal Investigator
  
  松下雄一郎
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic properties
- Principal Investigator
  
  Matsushita Yu-ichiro
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
Quantum state measurements of single photon sources in silicon carbide devices
- Principal Investigator
  
  Ohshima Takeshi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  National Institutes for Quantum and Radiological Science and Technology
Development of an extreme environment resistive CCD using silicon carbidePrincipal Investigator
- Principal Investigator
  
  HIJIKATA Yasuto
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saitama University
Generation and control of quantum correlated photons from atomic-layer doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Elucidation of formation mechanism of oxidation-induced fault in silicon carbide semiconductorsPrincipal Investigator
- Principal Investigator
  
  HIJIKATA Yasuto
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saitama University
Single Photon Generation from locally doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
テラヘルツ反射分光法による炭化珪素半導体の電気的特性の非破壊マッピング測定Principal Investigator
- Principal Investigator
  
  土方泰斗
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saitama University
Study on single photon emission utilizing isoelectronic traps
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Characterization of the Interfaces between IV-IV Semiconductors and Ultra-Thin Oxide films
- Principal Investigator
  
  YOSHIDA Sadafumi
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saitama University

[Book] Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy2013
- Author(s)
  S. Yoshida, Y. Hijikata, and H. Yaguchi
- Total Pages
  26
- Publisher
  INTECH open access publisher
- Data Source
  KAKENHI-PROJECT-24560365
[Book] Physics and Technology of Silicon Carbide Devices2013
- Author(s)
  Yasuto Hijikata
- Total Pages
  402
- Publisher
  INTECH open access publisher
- Data Source
  KAKENHI-PROJECT-24560365
[Book] Thermal Oxidation Mechanism of Silicon Carbide2013
- Author(s)
  Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida
- Total Pages
  26
- Publisher
  INTECH open access publisher
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Spin property improvement of boron vacancy defect in hexagonal boron nitride by thermal treatment2023
- Author(s)
  T. Suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y. Nishiya, Y.-i. Matsushita, K. Harii, Y. Masuyama, Y. Hijikata, and T. Ohshima
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 3 Pages: 032006-032006
- DOI
  10.35848/1882-0786/acc442
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K18292, KAKENHI-PROJECT-20K05352, KAKENHI-PROJECT-21H04553, KAKENHI-PROJECT-23K22787
[Journal Article] Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces2021
- Author(s)
  Hijikata Yasuto、Komori Shota、Otojima Shunsuke、Matsushita Yu-Ichiro、Ohshima Takeshi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 20 Pages: 204005-204005
- DOI
  10.1063/5.0048772
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-20H00355
[Journal Article] Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing2019
- Author(s)
  Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Satoh, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 963 Pages: 709-713
- DOI
  10.4028/www.scientific.net/msf.963.709
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure2019
- Author(s)
  Y. Matsushita, Y. Furukawa, Y. Hijikata, T. Ohshima
- Journal Title
  
  Applied Surface Science
  
  Volume: 464 Pages: 451-454
- DOI
  10.1016/j.apsusc.2018.09.072
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-18H03873, KAKENHI-PROJECT-15H03967
[Journal Article] Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties2019
- Author(s)
  S.-i. Sato, T. Narahara, Y. Abe, Y. Hijikata, T. Umeda, T. Ohshima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 126 Issue: 8 Pages: 083105-083105
- DOI
  10.1063/1.5099327
- NAID
  120007132685
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056
[Journal Article] Macroscopic simulations of the SiC thermal oxidation process based on the Si and C emission model2019
- Author(s)
  Hijikata Yasuto
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 92 Pages: 253-258
- DOI
  10.1016/j.diamond.2019.01.012
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-15H03967
[Journal Article] Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface2018
- Author(s)
  S.-i. Sato, T. Honda, T. Makino, Y. Hijikata, S.-Y. Lee, T. Ohshima
- Journal Title
  
  ACS Photonics
  
  Volume: 5 Issue: 8 Pages: 3159-3165
- DOI
  10.1021/acsphotonics.8b00375
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-15H03967
[Journal Article] Various Single Photon Sources Observed in SiC pin Diodes2018
- Author(s)
  H. Tsunemi, T. Honda, T. Makino, S. Onoda, S.-I. Sato, Y. Hijikata, T. Ohshima
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 924 Pages: 204-207
- DOI
  10.4028/www.scientific.net/msf.924.204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-15H03967
[Journal Article] Generation of stacking faults in 4H-SiC epilayer induced by oxidation2018
- Author(s)
  Asafuji Ryosuke、Hijikata Yasuto
- Journal Title
  
  Materials Research Express
  
  Volume: 5 Issue: 1 Pages: 015903-015903
- DOI
  10.1088/2053-1591/aaa00c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing2018
- Author(s)
  Y. Yamazaki, Y. Chiba, T. Makino, S. -I. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S.-Y. Lee, T. Ohshima
- Journal Title
  
  J. Mater. Res.
  
  Volume: 33 Issue: 20 Pages: 3355-3361
- DOI
  10.1557/jmr.2018.302
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-15H03967
[Journal Article] Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals2018
- Author(s)
  Y. Hijikata, T. Horii, Y. Furukawa, Y. Matsushita, T. Ohshima
- Journal Title
  
  J. Phys. Commun.
  
  Volume: 2 Issue: 11 Pages: 111003-111003
- DOI
  10.1088/2399-6528/aaede4
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H01056, KAKENHI-PROJECT-18H03770, KAKENHI-PROJECT-15H03967
[Journal Article] Impacts of Gate Bias and its Variation on Gamma-ray Irradiation Re-sistance of SiC MOSFETs2017
- Author(s)
  Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Yokoseki, Takahiro Makino, Shi-nobu Onoda, Akinori Takeyama, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, and Yasuto Hijikata
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 214 Issue: 4 Pages: 1600446-1600446
- DOI
  10.1002/pssa.201600446
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide2017
- Author(s)
  H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov
- Journal Title
  
  Nano Letters
  
  Volume: - Issue: 5 Pages: 2865-2870
- DOI
  10.1021/acs.nanolett.6b05395
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047, KAKENHI-PROJECT-16K13721, KAKENHI-PROJECT-15H03967
[Journal Article] Creation and Functionalization of Defects in SiC by Proton Beam Writing2017
- Author(s)
  T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. V. Astakhov
- Journal Title
  
  Mater. Sci. Forum
  
  Volume: 897 Pages: 233-237
- DOI
  10.4028/www.scientific.net/msf.897.233
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286047, KAKENHI-PROJECT-15H03967
[Journal Article] Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs2017
- Author(s)
  Satoshi Mitomo, Takuma Matsuda, Koichi Murata, Takashi Yokoseki, Takahiro Makino, Akinori Takeyama, Shi-nobu Onoda, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, and Yasuto Hijikata
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 214 Issue: 4 Pages: 1600425-1600425
- DOI
  10.1002/pssa.201600425
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Unified theory of silicon carbide oxidation based on the Si and C emission model2016
- Author(s)
  Daisuke Goto and Yasuto Hijikata
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 49 Issue: 22 Pages: 225103-225103
- DOI
  10.1088/0022-3727/49/22/225103
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region2016
- Author(s)
  T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 1S Pages: 01AD01-01AD01
- DOI
  10.7567/jjap.55.01ad01
- NAID
  210000145957
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Improvement of radiation response of SiC MOSFETs under high temperature and humidity circumstance2016
- Author(s)
  Akinori Takeyama, Takuma Matsuda, Takashi Yokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Shinobu Onoda, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 10 Pages: 104101-104101
- DOI
  10.7567/jjap.55.104101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers2016
- Author(s)
  T. Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
- Journal Title
  
  Superlattices and Microstructures
  
  Volume: 99 Pages: 197-201
- DOI
  10.1016/j.spmi.2016.03.005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature2016
- Author(s)
  Takuma Matsuda, Takashi Yokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
- Journal Title
  
  Materials Science Forum
  
  Volume: 858 Pages: 860-863
- DOI
  10.4028/www.scientific.net/msf.858.860
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers2015
- Author(s)
  Yutaro Miyano, Ryosuke Asafuji, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
- Journal Title
  
  AIP Advances
  
  Volume: 5 Issue: 12 Pages: 127116-127116
- DOI
  10.1063/1.4938126
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers2015
- Author(s)
  Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 327-330
- DOI
  10.4028/www.scientific.net/msf.821-823.327
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy2015
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, and H. Yaguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54 Issue: 5 Pages: 051201-051201
- DOI
  10.7567/jjap.54.051201
- NAID
  210000145121
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24360004, KAKENHI-PROJECT-26390057
[Journal Article] Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region2015
- Author(s)
  T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: -
- NAID
  210000145957
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-rays by Thermal Treatments2015
- Author(s)
  T. Yokoseki, H. Abe, T. Makino, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata and T. Ohshima
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 705-708
- DOI
  10.4028/www.scientific.net/msf.821-823.705
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate2015
- Author(s)
  Yasuto Hijikata, Ryosuke Asafuji, Ryotaro Konno, Yurie Akasaka, Ryo Shinoda
- Journal Title
  
  AIP Advances
  
  Volume: 5 Pages: 067128-067128
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15H03967
[Journal Article] Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry2015
- Author(s)
  D. Goto, Y. Hijikata, S. Yagi, and H. Yaguchi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 117 Issue: 9 Pages: 095306-095306
- DOI
  10.1063/1.4914050
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry2015
- Author(s)
  D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 821-823 Pages: 371-374
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys2014
- Author(s)
  W. Okubo, S. Yagi, Y. Hijikata, K. Onabe, and H. Yaguchi
- Journal Title
  
  Physica Status Solidi A
  
  Volume: 211 Issue: 4 Pages: 752-755
- DOI
  10.1002/pssa.201300462
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360004, KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-26390057
[Journal Article] Si emission into the oxide layer during oxidation of silicon carbide2014
- Author(s)
  Yasuto Hijikata, Yurie Akasaka, Shuhei Yagi, and Hiroyuki Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 778-780 Pages: 553-556
- DOI
  10.4028/www.scientific.net/msf.778-780.553
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2013
- Author(s)
  RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 85-87
- DOI
  10.1016/j.jcrysgro.2012.12.043
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model2013
- Author(s)
  Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, and Sadafumi Yoshida
- Journal Title
  
  Materials Science Forum
  
  Volume: 740-742 Pages: 833-836
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013
- Author(s)
  Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
- Journal Title
  
  THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012
  
  Volume: 1566 (1) Pages: 538-539
- DOI
  10.1063/1.4848523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K. Takamiya, Y.Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: Vol.706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H. Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: 706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry2012
- Author(s)
  Keiko Kouda, Yasuto Hijikata, Shuhei Yagi, and Hiroyuki Yaguchi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 112 Issue: 2 Pages: 24502-24502
- DOI
  10.1063/1.4736801
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Micro-Photoluminescence study on the influence of oxidation on stacking faults in 4H-SiC epilayers2012
- Author(s)
  Hikaru Yamagata, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 5 Pages: 51302-51302
- DOI
  10.1143/apex.5.051302
- NAID
  10030593386
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24560365
[Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in NitrogenDelta-DopedGaAs2012
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 5 Issue: 11 Pages: 111201-111201
- DOI
  10.1143/apex.5.111201
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-20104004, KAKENHI-PROJECT-23360135, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single is electronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Physica
  
  Volume: Vol.42, No10 Issue: 10 Pages: 2529-2531
- DOI
  10.1016/j.physe.2009.12.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2529-2531
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy2007
- Author(s)
  S.Oishi, Y.Hijikata, H.Yaguchi, S.Yoshida
- Journal Title
  
  Mater. Sci. Forum 556-557
  
  Pages: 423-426
- Data Source
  KAKENHI-PROJECT-17760247
[Journal Article] Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation2007
- Author(s)
  Y.Hijikata, S.Yoshida, F.Moscatelli, A.Poggi, S.Solmi, S.Cristiani, R.Nipoti
- Journal Title
  
  Mater. Sci. Forum 556-557
  
  Pages: 651-654
- Data Source
  KAKENHI-PROJECT-17760247
[Journal Article] Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose2007
- Author(s)
  A.Poggi, F.Moscatelli, Y.Hijikata, S.Solmi, M.Sanmartin, F.Tamarri, R.Nipoti
- Journal Title
  
  Mater. Sci. Forum 556-557
  
  Pages: 639-642
- Data Source
  KAKENHI-PROJECT-17760247
[Journal Article] Characterization of Oxide Films on 4H-SiC Epitaxial (000-1) Faces by High-Energy-Resolution Photoemission Spectroscopy : Comparison between Wet and Dry Oxidation2006
- Author(s)
  Y.Hijikata, H.Yaguchi, S.Yoshida, Y.Takata, K.Kobayashi, H.Nohira, T.Hattori
- Journal Title
  
  J. Appl. Phys. 100
  
  Pages: 53710-53710
- Data Source
  KAKENHI-PROJECT-17760247
[Journal Article] Simultaneous Determination of Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Infrared Reflectance Spectroscopy2006
- Author(s)
  S.Oishi, Y.Hijikata, H.Yaguchi, S.Yoshida
- Journal Title
  
  Jpn. J. Appl. Phys. 45
- Data Source
  KAKENHI-PROJECT-17760247
[Journal Article] Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements using Synchrotron2005
- Author(s)
  Y.Hijikata, H.Yaguchi, S.Yoshida, Y.Takata, K.Kobayashi, S.Shin, H.Nohira, T.Hattori
- Journal Title
  
  Mater.Sci.Forum 483-485
  
  Pages: 585-588
- Data Source
  KAKENHI-PROJECT-17760247
[Journal Article] Effect of Ar Post-Oxidation Annealing on Oxide-4H-SiC Interfaces Studied by Capacitance to Voltage Measurements and Photoemission Spectroscopy2005
- Author(s)
  Y.Hijikata, H.Yaguchi, Y.Ishida, M.Yoshikawa, S.Yoshida
- Journal Title
  
  J.Vac.Sci.Technol.A 23(2)
  
  Pages: 298-303
- Data Source
  KAKENHI-PROJECT-17760247
[Journal Article] Growth of high-quality hexagonal InN on 3C-SiC(001) by molecular beam epitaxy2005
- Author(s)
  H.Yaguchi, Y.Kitamura, K.Nishida, Y.Iwahashi, Y.Hijikata, S.Yoshida
- Journal Title
  
  Physica Status Solidi (c) 2(7)
  
  Pages: 2267-2270
- Data Source
  KAKENHI-PROJECT-17760247
[Presentation] 電子線照射により形成した4H-SiC中シリコン空孔の荷電状態とドーピング濃度の関係2023
- Author(s)
  張盛杰, 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 張啓航, 土田秀一, 土方泰斗, 大島武
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] 電子線照射による 4H-SiC 中窒素・空孔複合欠陥の高濃度形成2023
- Author(s)
  張啓航, 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 張盛杰, 土田秀一, 土方泰斗, 大島武
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] ナノダイヤモンド温度センサを用いたカーボンナノチューブの熱電測定2023
- Author(s)
  杉本昂暉, 土方泰斗, 清水麻希
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] 電子線照射による 4H-SiC 中窒素・空孔複合欠陥の高濃度形成2023
- Author(s)
  張啓航, 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 張盛杰, 土田秀一, 土方泰斗, 大島武
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] 電子線照射により形成した4H-SiC中シリコン空孔の荷電状態とドーピング濃度の関係2023
- Author(s)
  張盛杰, 佐藤真一郎, 村田晃一, 花輪雅史, 元木秀, 張啓航, 土田秀一, 土方泰斗, 大島武
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] ナノダイヤモンド温度センサを用いたカーボンナノチューブの熱電測定2023
- Author(s)
  杉本昂暉, 土方泰斗, 清水麻希
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] Generation of boron vacancy defects in hexagonal boron nitride by high temperature ion irradiation2022
- Author(s)
  T. Suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y.-I. Matsushita, Y. Nishiya, Y. Masuyama, Y. Hijikata, T Ohshima
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures2022
- Author(s)
  S. Motoki, S.-I. Sato, Y. Masuyama, Y. Yamazaki, S. Saiki, Y. Hijikata, T. Ohshima
- Organizer
  Defects in solids for quantum technologies (DSQT)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] Characteristics of the single photon sources formed at the MOS interface2022
- Author(s)
  Yasuto Hijikata
- Organizer
  The 3rd Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] 高エネルギー電子線照射による4H-SiC中シリコン空孔の高濃度形成2022
- Author(s)
  元木秀, 佐藤真一郎, 佐伯誠一，村田晃一，増山雄太, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures2022
- Author(s)
  S. Motoki, S.-I. Sato, Y. Masuyama, Y. Yamazaki, S. Saiki, Y. Hijikata, T. Ohshima
- Organizer
  Defects in solids for quantum technologies (DSQT)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] Characteristics of the single photon sources formed at the MOS interface2022
- Author(s)
  Yasuto Hijikata
- Organizer
  The 3rd Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] Generation of boron vacancy defects in hexagonal boron nitride by high temperature ion irradiation2022
- Author(s)
  T. Suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y.-I. Matsushita, Y. Nishiya, Y. Masuyama, Y. Hijikata, T Ohshima
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K18292
[Presentation] 高エネルギー電子線照射による4H-SiC中シリコン空孔の高濃度形成2022
- Author(s)
  元木秀, 佐藤真一郎, 佐伯誠一，村田晃一，増山雄太, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22787
[Presentation] SiCデバイス内の3次元配列シリコン空孔を用いた光検出磁場共鳴測定2019
- Author(s)
  山﨑雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC2019
- Author(s)
  T. Narahara, S.-i. Sato, K. Kojima, Y. Yamazaki, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Room temperature electronic-controllable quantum devices using single-photon sources in SiC crystals2019
- Author(s)
  Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
- Organizer
  2nd The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] PLイメージング法による異なるオフカット角を有する4H-SiC基板中の酸化誘起積層欠陥の観測2019
- Author(s)
  新田翔司，土方泰斗
- Organizer
  先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響2019
- Author(s)
  楢原拓真, 佐藤真一郎, 児島一聡, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Position-Selective Silicon Vacancy Formation in Silicon Carbide Devices using Proton Beam Writing2019
- Author(s)
  T. Ohshima, Y. Yamazaki, Y. Chiba, Y. Hijikata, K. Kojima, S.-Y. Lee, W. Kada
- Organizer
  Quantum 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係2019
- Author(s)
  楢原拓真，佐藤真一郎，児島一聡，山﨑雄一, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 同位体酸素を用いたSiC表面に形成される単一光子源の構造推定2019
- Author(s)
  土方泰斗，松下　雄一郎，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC デバイス内に作製したシリコン空孔の光・電気同時励起時における光学特性2019
- Author(s)
  山﨑雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Creation of nitrogen-vacancy centers in SiC by ion irradiation2019
- Author(s)
  T. Ohshima, S.-i. Sato, T. Narahara, Y. Yamazaki, Y. Abe, T. Umeda, Y. Hijikata
- Organizer
  30th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment2019
- Author(s)
  Y. Chiba, Y. Yamazaki, S.i. Sato, T. Makino, N. Yamada, T. Satoh, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC結晶中シリコン空孔の光検出磁気共鳴信号にアニール温度が及ぼす影響2019
- Author(s)
  千葉陽史, 山﨑雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 同位体酸素を用いたSiC 表面に形成される単一光子源の構造推定2019
- Author(s)
  土方泰斗, 松下雄一郎，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles2019
- Author(s)
  S.-i. Sato, T. Narahara, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Structure identification and characterization of the single-photon sources formed on the surface of silicon carbide crystal2019
- Author(s)
  Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
- Organizer
  2019 Energy Materials and Nanotechnology on Epitaxy (EMN Meeting on Epitaxy 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Room temperature electronic-driven quantum devices using single defects in silicon carbide semiconductors2019
- Author(s)
  Y. Hijikata
- Organizer
  2019 International Seminar on Electron Devices Design and Production (SED-2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment2019
- Author(s)
  Y. Chiba, Y. Yamazaki, S.i. Sato, T. Makino, N. Yamada, T. Satoh, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC結晶中シリコン空孔の光検出磁気共鳴信号にアニール温度が及ぼす影響2019
- Author(s)
  千葉陽史, 山﨑雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC結晶中シリコン空孔のODMR信号に熱処理温度が及ぼす影響2019
- Author(s)
  千葉陽史, 山﨑雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Optically detected magnetic resonance study of 3D arrayed silicon vacancies in SiC pn diodes2019
- Author(s)
  Y. Yamazaki, Y. Chiba, S.-I. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiCデバイス内の3次元配列シリコン空孔を用いた光検出磁場共鳴測定2019
- Author(s)
  山﨑雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] γ線照射が炭化ケイ素表面発光中心の生成・発光特性に与える影響2019
- Author(s)
  山﨑雄一，常見大貴，佐藤真一郎, 土方泰斗，大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成におけるイオンビーム照射の影響2019
- Author(s)
  楢原拓真，佐藤真一郎，土方泰斗，大島武
- Organizer
  第66回応用物理学会春季学術講演会 (11p-70A-14) (大岡山) 2019.3.11.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC2019
- Author(s)
  T. Narahara, S.-i. Sato, K. Kojima, Y. Yamazaki, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Position-Selective Silicon Vacancy Formation in Silicon Carbide Devices using Proton Beam Writing2019
- Author(s)
  T. Ohshima, Y. Yamazaki, Y. Chiba, Y. Hijikata, K. Kojima, S.-Y. Lee, W. Kada
- Organizer
  Quantum 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC結晶中シリコン空孔のODMR信号に熱処理温度が及ぼす影響2019
- Author(s)
  千葉陽史, 山﨑雄一, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles2019
- Author(s)
  S.-i. Sato, T. Narahara, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Creation of nitrogen-vacancy centers in SiC by ion irradiation2019
- Author(s)
  T. Ohshima, S.-i. Sato, T. Narahara, Y. Yamazaki, Y. Abe, T. Umeda, Y. Hijikata
- Organizer
  30th International Conference on Defects in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成におけるイオンビーム照射の影響2019
- Author(s)
  楢原拓真, 佐藤真一郎, 土方泰斗, 大島武
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Below-Gap励起光を用いたFET構造4H-SiCの欠陥準位の検出2019
- Author(s)
  小野寺奎, 鎌田憲彦, 土方泰斗, 武山昭憲, 大島武, 吉江徹
- Organizer
  第80回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC デバイス内に作製したシリコン空孔の光・電気同時励起時における光学特性2019
- Author(s)
  山﨑雄一, 千葉陽史, 佐藤真一郎, 牧野高紘, 山田尚人, 佐藤隆博, 土方泰斗, 児嶋一聡, 土田秀一, 星乃紀博, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響2019
- Author(s)
  楢原拓真, 佐藤真一郎, 児島一聡, 山﨑雄一, 土方泰斗, 大島武
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 同位体酸素を用いたSiC表面に形成される単一光子源の構造推定2019
- Author(s)
  土方泰斗，松下雄一郎，大島武
- Organizer
  第66回応用物理学会春季学術講演会 (9a-PB3-5) (大岡山) 2019.3.9.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] γ線照射が炭化ケイ素表面発光中心の生成・発光特性に与える影響2019
- Author(s)
  山崎雄一郎，常見大貴，佐藤真一郎，土方泰斗，大島武
- Organizer
  第66回応用物理学会春季学術講演会 (11p-70A-15) (大岡山) 2019.3.11.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Optically detected magnetic resonance study of 3D arrayed silicon vacancies in SiC pn diodes2019
- Author(s)
  Y. Yamazaki, Y. Chiba, S.-I. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係2019
- Author(s)
  楢原拓真，佐藤真一郎，児島一聡，山﨑雄一, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第6回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC半導体が実現する室温電子駆動量子センサ2018
- Author(s)
  土方泰斗，牧野高紘，佐藤真一郎，山崎雄一，大島武
- Organizer
  第2回量子生命科学研究会第２回学術集会 (P1) (東大本郷) 2018.5.10.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Growth Rate Simulations of Oxide Films on Silicon Carbide based on the Si and C Emission Model2018
- Author(s)
  Y. Hijikata
- Organizer
  2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] プロトンビーム描画を用いてSiCデバイス中に作製したシリコン空孔のODMR測定2018
- Author(s)
  千葉陽史，山﨑雄一，牧野高紘，佐藤真一郎，山田尚人,　佐藤隆博, 児島一聡, 土方泰斗，大島武
- Organizer
  2018年第79回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Position-selective introduction of electrically excitable color centers in SiC pn junction diode by proton beam writing2018
- Author(s)
  Y. Yamazaki, Y. Chiba, T. Makino, S. -i. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S. Y. Lee, T. Ohshima
- Organizer
  16th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] A Macroscopic Simulation of the SiC Thermal Oxidation Process based on the Si and C Emission Model2018
- Author(s)
  Yasuto Hijikata
- Organizer
  The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2018 (Beijing, China) 2018.7.11.
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer2018
- Author(s)
  Y. Hijikata, Y. Furukawa, Y. -i. Matsushita, T. Ohshima
- Organizer
  2018 E-MRS Spring meeting and Exhibit
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] プロトンビーム描画を用いたSiC pinダイオード中への発光中心の形成2018
- Author(s)
  千葉陽史, 常見大貴, 本多智也, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer2018
- Author(s)
  Y. Hijikata, Y. Furukawa, Y.-i. Matsushita, and T. Ohshima
- Organizer
  European Materials Research Society (E-MRS) 2018 Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC半導体表面に形成した単一光子源の低温フォトルミネッセンス特性2018
- Author(s)
  音嶋俊介，松下雄一郎，大島武，土方泰斗
- Organizer
  第79回応用物理学会秋季学術講演会 (21a-141-13) (名古屋) 2018.9.21.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] A Macroscopic Simulation of the SiC Thermal Oxidation Process based on the Si and C Emission Model2018
- Author(s)
  Y. Hijikata
- Organizer
  The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM)
- Invited
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] SiC表面に形成される単一光子源の酸化膜厚依存性2018
- Author(s)
  常見大貴，佐藤真一郎，山﨑雄一，牧野高紘，土方泰斗，大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-18H03770
[Presentation] Growth Rate Simulations of Oxide Films on Silicon Carbide based on the Si and C Emission Model2018
- Author(s)
  Yasuto Hijikata
- Organizer
  2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018) (Zhuhai, China) 2018.12.25.
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] プロトンビーム描画プロセスがSiC pnダイオード中に導入したシリコン空孔の光学特性に与える影響2018
- Author(s)
  山﨑雄一，千葉陽史，牧野高紘,　佐藤真一郎，山田尚人, 佐藤隆博, 土方泰斗，児島一聡,　 S. -Y. Lee, 大島武
- Organizer
  2018年第79回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC半導体を用いた非接触給電装置の耐放射線性評価2018
- Author(s)
  赤川拓，川原藤樹，金子裕良，武山昭憲，大島武，土方泰斗
- Organizer
  先進パワー半導体分科会第5回講演会 (IIB-28) (京都) 2018.11.7.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] SiC表面に形成される単一光子源の酸化膜厚依存性2018
- Author(s)
  常見大貴，佐藤真一郎，山﨑雄一，牧野高紘，土方泰斗，大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] プロトンビーム描画により形成したシリコン空孔の光学特性劣化要因に関する研究2018
- Author(s)
  山﨑雄一，千葉陽史，牧野高紘, 佐藤真一郎，山田尚人, 佐藤隆博, 加田渉, 土方泰斗，児島一聡, S. -Y. Lee, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] プロトンビーム描画プロセスがSiC pnダイオード中に導入したシリコン空孔の光学特性に与える影響2018
- Author(s)
  山﨑雄一，千葉陽史，牧野高絋，山田尚人，佐藤隆博，土方泰斗，児島一聡，大島武
- Organizer
  第79回応用物理学会秋季学術講演会 (21a-141-10) (名古屋) 2018.9.21.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成と発光特性2018
- Author(s)
  楢原拓真，佐藤真一郎，土方泰斗，大島武
- Organizer
  先進パワー半導体分科会第5回講演会 (IA-7) (京都) 2018.11.6.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] プロトンビーム描画により形成されたSiC pnダイオード中シリコン空孔のODMR測定2018
- Author(s)
  千葉陽史，山﨑雄一，牧野高絋，佐藤真一郎，山田尚人，佐藤隆博，児島一聡，土方泰斗，大島武
- Organizer
  先進パワー半導体分科会第5回講演会 (IIA-10) (京都) 2018.11.7.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] 4H-SiCエピ層中の積層欠陥近傍における単一光子源の発光効率向上2018
- Author(s)
  赤堀周平、古川頼誉、松下雄一郎、大島武、土方泰斗
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC p+nn+ダイオード中の単一光子源の発光特性に関する考察2018
- Author(s)
  常見大貴，佐藤真一郎，山﨑雄一，牧野高絋，土方泰斗，大島武
- Organizer
  第79回応用物理学会秋季学術講演会 (21a-141-12) (名古屋) 2018.9.21.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] SiC表面に形成される単一光子源の酸化膜厚依存性2018
- Author(s)
  常見大貴，佐藤真一郎，山﨑雄一，牧野高絋，土方泰斗，大島武
- Organizer
  先進パワー半導体分科会第5回講演会 (IIB-24) (京都) 2018.11.7.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] プロトンビーム描画により形成したシリコン空孔の光学特性劣化要因に関する研究2018
- Author(s)
  山﨑雄一，千葉陽史，牧野高絋，佐藤真一郎，山田尚人，佐藤隆博，加田渉，土方泰斗，児島一聡，S.-Y.Lee，大島武
- Organizer
  先進パワー半導体分科会第5回講演会 (IIB-5) (京都) 2018.11.7.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] 4H-SiC酸化によるアモルファス構造が表面単一光子光源に与える影響の理論的分析2018
- Author(s)
  古川頼誉, 土方泰斗, 大島武, 松下雄一郎
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC p+nn+ダイオード中の単一光子源の発光特性に関する考察2018
- Author(s)
  常見大貴, 佐藤真一郎, 山﨑雄一, 牧野高紘, 土方泰斗, 大島武
- Organizer
  2018年第79回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Creating single photon sources in SiC pn diodes using proton beam writing2018
- Author(s)
  Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, T. Ohshima, Y. Hijikata
- Organizer
  2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018) (Zhuhai, China) 2018.12.25.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs2018
- Author(s)
  T. Makino, S. Takano, S. Harada, Y. Hijikata, and T. Ohshima
- Organizer
  2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC) (Hawaii, USA) (PG2) 2018.7.18.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] プロトンビーム描画により形成されたSiC pnダイオード中シリコン空孔のODMR測定2018
- Author(s)
  千葉陽史，山﨑雄一，牧野高紘，佐藤真一郎，山田尚人,　佐藤隆博，加田渉，児島一聡，土方泰斗，大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] プロトンビーム描画を用いてSiCデバイス中に作製したシリコン空孔のODMR測定2018
- Author(s)
  千葉陽史，山﨑雄一，牧野高絋，佐藤真一郎，山田尚人，佐藤隆博，児島一聡，土方泰斗，大島武
- Organizer
  第79回応用物理学会秋季学術講演会 (21a-141-11) (名古屋) 2018.9.21.
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Creation of electrically controllable radiation centers in SiC using proton beam writing2018
- Author(s)
  Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima
- Organizer
  12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer2018
- Author(s)
  Y. Hijikata, Y. Furukawa, Y.-i. Matsushita, and T. Ohshima
- Organizer
  European Materials Research Society (E-MRS) 2018 Spring Meeting (Strasbourg, France) (I.8.3) 2018.6.20.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Creation of silicon vacancy in silicon carbide device by proton beam writing toward quantum applications2018
- Author(s)
  Takeshi Ohshima, Yuichi Yamazaki, Yuji Chiba, Naoto Yamada, Shin-ichiro Sato, Takahiro Satoh, Yasuto Hijikata, Sang-Yun Lee, Kazutoshi Kojima
- Organizer
  25th International Conference on Application of Accelerators in Research and Industry (CAARI2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成と発光特性2018
- Author(s)
  楢原拓真, 佐藤真一郎, 土方泰斗, 大島武
- Organizer
  応用物理学会　先進パワー半導体分科会第5回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 負ゲートバイアス印加によるSiC MOSFETのガンマ線照射劣化挙動2017
- Author(s)
  武山昭憲，松田拓磨，三友啓，村田航一，牧野高紘，小野田忍，大久保秀一，田中雄季，神取幹郎，吉江徹，土方泰斗，大島武
- Organizer
  先進パワー半導体分科会第3回講演会 (名古屋)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] 4H-SiCエピ層中の積層欠陥近傍における単一光子源の発光効率向上2017
- Author(s)
  赤堀周平，古川頼誉，松下雄一郎，大島武，土方泰斗
- Organizer
  第65回応用物理学会春季学術講演会 (早稲田)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Various single photon sources observed in SiC pin diodes2017
- Author(s)
  H. Tsunemi, T. Honda, T. Makino, S. Onoda, S-I. Sato, Y. Hijikata, and T. Ohshima
- Organizer
  Inter. Conf. SiC and Related Materials (ICSCRM2017)(Washington D.C.)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] プロトンビーム描画を用いたSiC pinダイオード中への発光中心の形成2017
- Author(s)
  千葉陽史，常見大貴，本多智也，牧野高紘，佐藤信一郎，山田尚人，佐藤隆博，土方泰斗，大島武
- Organizer
  第65回応用物理学会春季学術講演会 (早稲田)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] 4H-SiC酸化によるアモルファス構造が表面単一光子源に与える影響の理論的分析2017
- Author(s)
  古川頼誉，土方泰斗，大島武，松下雄一郎
- Organizer
  第65回応用物理学会春季学術講演会 (早稲田)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] 重イオン照射によるSiC-MOSFET中の誘起収集電荷の発生過程2017
- Author(s)
  高野修平，牧野高紘，原田信介，土方泰斗，大島武
- Organizer
  第78回応用物理学会秋季学術講演会 (福岡)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] SiC p+nn+ダイオードに形成される単一光子源の発光スペクトル2017
- Author(s)
  常見大貴、本多智也、牧野高絋、小野田忍、佐藤真一郎、土方泰斗、大島武
- Organizer
  第78回応用物理学会秋季学術講演会 (福岡)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] チャネルサイズがSiC-MOSFETのガンマ線照射効果に及ぼす影響2017
- Author(s)
  武山昭憲，牧野高紘，大久保秀一，田中雄季，神取幹郎，吉江徹，土方泰斗，大島武
- Organizer
  第65回応用物理学会春季学術講演会 (早稲田)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] バイアス印加によるSiCダイオード中の発光中心の発光強度変化2017
- Author(s)
  本多智也，常見大貴，小野田忍，牧野高紘，佐藤真一郎，土方泰斗，大島武
- Organizer
  先進パワー半導体分科会第3回講演会 (名古屋)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] SiC p+nn+ダイオード中の発光中心のバイアス電圧による発光強度変化2017
- Author(s)
  本多智也、常見大貴、児島一聡、佐藤真一郎、牧野高紘、小野田忍、土方泰斗、大島武
- Organizer
  第78回応用物理学会秋季学術講演会 (福岡)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Enhanced single photon emission near stacking fault in 4H-SiC epilayer2017
- Author(s)
  Y. Hijikata, S. Akahori, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Functionalization of Silicon Carbide by Particle Irradiation toward Quantum Devices2017
- Author(s)
  T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S. Sato, S. Onoda, Y. Hijikata
- Organizer
  2017 MRS Fall Meeting and Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiCエピ層における積層欠陥近傍の単一光子源の発光特性2017
- Author(s)
  赤堀周平、古川頼誉、松下雄一郎、大島武、土方泰斗
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] トレンチゲート型SiC-MOSFETにおける放射線誘起破壊現象の物理過程探索と耐性評価2017
- Author(s)
  高野修平，牧野高紘，原田信介，土方泰斗，大島武
- Organizer
  先進パワー半導体分科会第3回講演会 (名古屋)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Contraolled 3D Placement of Vacancy Spins for Quantum Applications in Silicon Carbide2017
- Author(s)
  H. Kraus, D. Simin, C. Kasper, W. Kada, Y. Hijikata, C. J. Cochrane, T. Ohshima, V. Dyakonov, G. Astakhov
- Organizer
  Inter. Conf. SiC and Related Materials (ICSCRM2017)(Washington D.C.)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] 4H-SiC 中の積層欠陥が単一光子光源の発光波長に及ぼす影響の理論的分析2017
- Author(s)
  古川頼誉，土方泰斗，大島武，松下雄一郎
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC 中の積層欠陥が単一光子光源の発光波長に及ぼす影響の理論的分析2017
- Author(s)
  古川頼誉，土方泰斗，大島武，松下雄一郎
- Organizer
  先進パワー半導体分科会第3回講演会 (名古屋)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] SiC p+nn+ダイオード中の発光中心のバイアス電圧による発光強度変化2017
- Author(s)
  本多智也, 常見大貴, 児島一聡, 佐藤真一郎, 牧野高紘, 小野田忍, 土方泰斗, 大島武
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 負ゲートバイアス印加がSiC MOSFETのガンマ線照射劣化に及ぼす影響2017
- Author(s)
  武山昭憲，牧野高紘，大久保秀一，田中雄季，神取幹郎，吉江徹，土方泰斗，大島武
- Organizer
  第78回応用物理学会秋季学術講演会 (福岡)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Various single photon sources observed in SiC pin diodes2017
- Author(s)
  H. Tsunemi, T. Honda, T. Makino, S. Onoda, S-I. Sato, Y. Hijikata, T. Ohshima
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Functionalization of Silicon Carbide by Particle Irradiation toward Quantum Devices2017
- Author(s)
  T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S.-i. Sato, S. Onoda, Y. Hijikata
- Organizer
  2017 MRS Fall meeting(Boston, USA)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] バイアス印加によるSiCダイオード中の発光中心の発光強度変化2017
- Author(s)
  本多智也, 常見大貴, 小野田忍, 佐藤真一郎, 牧野高紘, 土方泰斗, 大島武
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] 4H-SiCエピ層における積層欠陥近傍の単一光子源の発光特性2017
- Author(s)
  赤堀周平、古川頼誉、松下雄一郎、大島武、土方泰斗
- Organizer
  第78回応用物理学会秋季学術講演会 (福岡)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Enhanced Single Photon Emission near Stacking Fault in 4H-SiC Epilayer2017
- Author(s)
  Y. Hijikata, S. Akahori, and T. Ohshima
- Organizer
  Inter. Conf. SiC and Related Materials (ICSCRM2017)(Washington D.C.)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] SiC p+nn+ダイオードに形成される単一光子源の発光特性2017
- Author(s)
  常見大貴、本多智也、牧野高絋、小野田忍、佐藤真一郎、土方泰斗、大島武
- Organizer
  先進パワー半導体分科会第3回講演会 (名古屋)
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Observation of Single Photon Sources in Silicon Carbide PiN Diodes2017
- Author(s)
  T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S. Sato, S. Onoda, Y. Hijikata, B. C. Johnson, J. R. Klein, A. Lohrmann, J. C. McCaiium
- Organizer
  International Union of Materials Research Societies, The 15th International Conference on Advanced Materials (IUMRS-ICAM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC p+nn+ダイオード表面に形成される単一光子源の発光特性2017
- Author(s)
  常見大貴, 本多智也, 佐藤真一郎, 小野田忍, 牧野高紘, 土方泰斗, 大島武
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] SiC p+nn+ダイオードに形成される単一光子源の発光スペクトル2017
- Author(s)
  常見大貴，本多智也，牧野高紘，小野田忍，佐藤真一郎，土方泰斗，大島武
- Organizer
  2017年第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Controlled 3D Placement of Vacancy Spins for Quantum Applications in Silicon Carbide2017
- Author(s)
  H. Kraus, D. Simin, C. Kasper, W. Kada, Y. Hijikata, C. Cochrane, T. Ohshima, V. Dyakonov, G. V. Astakhov
- Organizer
  International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01056
[Presentation] Generation of stacking faults in 4H-SiC epilayer during oxidation2016
- Author(s)
  Ryosuke Asafuji and Yasuto Hijikata
- Organizer
  Energy Materials Nanotechnology (EMN) on Epitaxy 2016
- Place of Presentation
  Budapest, Hungary
- Year and Date
  2016-09-05
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs2016
- Author(s)
  S. Mitomo, T. Matsuda, K. Murata, T. Tokoseki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
- Organizer
  European Materials Research Society (E-MRS) 2016 Spring Meeting
- Place of Presentation
  Lille, France
- Year and Date
  2016-05-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Impacts of Gate Bias and its Variation on Gamma-ray Irradiation Resistance of SiC MOSFETs2016
- Author(s)
  Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Tokoseki, Takahiro Makino, Akinori Takeyama, Shinobu Onoda,Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Takeshi Ohshima , Yasuto Hijikata
- Organizer
  European Materials Research Society (E-MRS) 2016 Spring Meeting
- Place of Presentation
  Lille, France
- Year and Date
  2016-05-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] SiC酸化膜界面のパッシベーション技術2016
- Author(s)
  土方泰斗
- Organizer
  応用物理学会先進パワー半導体分科会第２回個別討論会
- Place of Presentation
  名駅ＡＢＣビル（名古屋中村区）
- Year and Date
  2016-08-01
- Invited
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] A Development of Super Radiation-Hardened Power Electronics Using Silicon Carbide Semiconductors -Toward MGy-Class Radiation Resistivity-2015
- Author(s)
  Y. Hijikata, S. Mitomo, T. Matsuda, K. Murata, T. Yokoseki, T. Makino, A. Takeyama, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, and T. Ohshima
- Organizer
  The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA)
- Place of Presentation
  桐生市市民文化会館（群馬県桐生市）
- Year and Date
  2015-11-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] ゲートバイアス印加を伴うSiC MOSFETへのガンマ線照射効果2015
- Author(s)
  村田航一，三友啓，松田拓磨，横関貴史，牧野高紘，阿部浩之，小野田忍，大久保秀一，田中雄季，神取幹郎，吉江徹，大島武，土方泰斗
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県・平塚市）
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 第一原理計算によるInAsN混晶のバンド構造に関する研究2015
- Author(s)
  宮崎貴史, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学(神奈川県・平塚市)
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] SiC熱酸化における界面からのSi、C放出と界面欠陥2015
- Author(s)
  土方泰斗
- Organizer
  応用物理学会先進パワー半導体分科会第１回個別討論会
- Place of Presentation
  埼玉大学東京ステーションカレッジ（東京都千代田区）
- Year and Date
  2015-08-04
- Invited
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature2015
- Author(s)
  Takuma Matsuda, Takashi Tokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
- Organizer
  International Conference on SiC and Related Materials (ICSCRM2015)
- Place of Presentation
  Giargini Naxos, Italy
- Year and Date
  2015-10-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] SiC-MOSFETへのガンマ線照射効果の酸化膜作製プロセスによる違い2015
- Author(s)
  三友啓，松田拓磨，村田航一，横関貴史，牧野高紘，阿部浩之，小野田忍，大島武，大久保秀一，田中雄季，神取幹郎，吉江徹，土方泰斗
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県・平塚市）
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers2015
- Author(s)
  T.Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
- Organizer
  The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XVI 2015)
- Place of Presentation
  Suzhou, China
- Year and Date
  2015-09-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] 高温下ガンマ線照射したSiC MOSFETの耐放射線性評価2015
- Author(s)
  松田拓磨，横関貴史，三友啓，村田航一，牧野高紘，阿部浩之，小野田忍，大久保秀一，田中雄季，神取幹郎，吉江徹，大島武，土方泰斗
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県・平塚市）
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Si及びC原子放出モデルに基づくSiC熱酸化メカニズムの統合理論2015
- Author(s)
  土方泰斗、浅藤亮祐
- Organizer
  第76回秋季応用物理学会講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H03967
[Presentation] Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region2015
- Author(s)
  T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
- Organizer
  ISPlasma2015
- Place of Presentation
  名古屋大学（愛知県・名古屋市）
- Year and Date
  2015-03-27
- Invited
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers2014
- Author(s)
  Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi
- Organizer
  10th Europian Concerence on Silicon Carbide and Related Materilas
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-24
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well2014
- Author(s)
  Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
- Organizer
  The 41st International Symposium on Compound Semiconductors
- Place of Presentation
  モンペリエ(フランス)
- Year and Date
  2014-05-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] ガンマ線照射したSiC MOSFETの特性の安定性2014
- Author(s)
  横関貴史、牧野高紘、阿部浩之、小野田忍、大島武、田中雄季、神取幹郎、吉江徹、土方泰斗
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道・札幌市）
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry2014
- Author(s)
  D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi
- Organizer
  10th Europian Concerence on Silicon Carbide and Related Materilas
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-24
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] フォトルミネッセンス法による4H-SiCエピ層中の酸化誘因欠陥の観察2014
- Author(s)
  宮野祐太郎、八木修平、土方泰斗、矢口裕之
- Organizer
  応用物理学会先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち（愛知県・名古屋市）
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] SiC酸化へのArアニール導入による酸化膜成長速度の変化2014
- Author(s)
  今野良太郎，八木修平，土方泰斗，矢口裕之
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道・札幌市）
- Year and Date
  2014-09-19
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] ガンマ線照射したSiC MOSFETの熱アニールによる特性劣化の回復2014
- Author(s)
  横関貴史、阿部浩之、牧野高紘、小野田忍、田中雄季、神取幹郎、吉江徹、土方泰斗、大島武
- Organizer
  応用物理学会先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち（愛知県・名古屋市）
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] In-situ分光エリプソメータによるSiC酸化過程の面方位依存性測定 (II)2014
- Author(s)
  後藤大祐、八木修平、土方泰斗、矢口裕之
- Organizer
  応用物理学会先進パワー半導体分科会第１回講演会
- Place of Presentation
  ウインクあいち（愛知県・名古屋市）
- Year and Date
  2014-11-19
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-rays by Thermal Treatments2014
- Author(s)
  T. Yokoseki, H. Abe, T. Makino, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata and T. Ohshima
- Organizer
  10th Europian Concerence on Silicon Carbide and Related Materilas
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-09-22
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Gamma-Ray Irradiation Response of Silicon Carbide Semiconductor Devices: Extremely High Radiation Resistance2014
- Author(s)
  S. Sato, S. Onoda, T. Makino, N. Fujuta, T. Ohshima1, T. Yokoseki, K. Tanaka, Y. Hijikata, Y. Tanaka, M. Kandori, T. Yoshie
- Organizer
  7th International Youth Nuclear Congress
- Place of Presentation
  Burgos, Spain
- Year and Date
  2014-07-09
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012
- Author(s)
  K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
- Organizer
  31st International Conference on the Physics of Semiconductors
- Place of Presentation
  スイス連邦工科大学チューリッヒ校(スイス)
- Year and Date
  2012-08-02
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] GaAs中窒素δドープ超格子のエネルギー構造評価2012
- Author(s)
  野口駿介, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光2012
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs中の窒素原子対が形成する単一の等電子トラップからの発光に対する一軸応力の影響2012
- Author(s)
  新井佑也, 星野真也, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良県新公会堂(奈良県)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012
- Author(s)
  金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] 第一原理計算によるGaAsNの電子構造に対する原子配置の影響に関する研究2012
- Author(s)
  坂元圭, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec, Canada)(招待講演)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K.Takamiya, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H.Yaguchi
- Organizer
  The 7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec,Canada)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Is oelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Organizer
  The 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs(110)中の単一等電子トラップからの発光の偏光特性2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトリフレクタンススペクトル2010
- Author(s)
  大久保航, 石川輝, 八木修平, 土方泰斗, 吉田貞史, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010
- Author(s)
  星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2010
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010
- Author(s)
  石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Photoluminescence from single is oelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2009
- Author(s)
  T. Fukushima, M. Ito, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  神戸国際会議場 (兵庫県)
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光2009
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2009
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2009
- Author(s)
  福島俊之, M.Ito, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, S.Kuboys, 片山竜二, 尾鍋研太郎
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  兵庫県・神戸国際会議場
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 堆積と熱酸化による4H-SiC MOS 構造の作製(II)
- Author(s)
  大谷篤志, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市浦和区）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 堆積と熱酸化による4H-SiC MOS 構造の作製
- Author(s)
  大谷篤志，八木修平，土方泰斗，矢口裕之
- Organizer
  第21回SiC及び関連ワイドギャップ半導体研究会
- Place of Presentation
  大阪（大阪市中央公会堂）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model
- Author(s)
  Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida
- Organizer
  9th European Conference of SiC and Related Matterials
- Place of Presentation
  Russia (Saint-Petersburg)
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] SiC-MOSキャパシタの電気特性のガンマ線照射線量依存性
- Author(s)
  田中量也, 横関貴史, 藤田奈津子，牧野高紘, 小野田忍, 大島武, 田中雄季, 神取幹郎, 吉江徹, 土方泰斗
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] In-situ分光エリプソメーターによるSiC酸化過程の面方位依存性測定
- Author(s)
  後藤大祐, 八木修平, 土方泰斗, 矢口裕之
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市浦和区）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 堆積と熱酸化による4H-SiC MOS 構造の作製
- Author(s)
  大谷篤志，八木修平，土方泰斗，矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山（愛媛/松山大学）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Co-60ガンマ線によるSiC-MOSFETのI-V特性の劣化評価
- Author(s)
  横関貴史, 田中量也, 藤田奈津子, 牧野高紘, 小野田忍, 大島武, 田中雄季, 神取幹郎, 吉江徹, 土方泰斗
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市浦和区）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Si emission into the oxide layer during oxidation of silicon carbide
- Author(s)
  Yasuto Hijikata, Yurie Akasaka, Shuhei Yagi, and Hiroyuki Yaguchi
- Organizer
  International Conference on SiC and Related Materials (ICSCRM2013)
- Place of Presentation
  Seagaia Convention Center (宮崎県宮崎市)
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] ワイドギャップ半導体MIS界面の電気的評価
- Author(s)
  土方泰斗
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市浦和区）
- Invited
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Photoreflectance Study of the Temperature Dependence of Excitonic Transitions in Dilute GaAsN Alloys
- Author(s)
  W. Okubo, S. Yagi, Y. Hijikata, K. Onabe and H. Yaguchi
- Organizer
  10th International Conference on Nitride Semiconductors 2013
- Place of Presentation
  ゲイロード・ナショナル・リゾート・アンド・コンベンション・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
- Author(s)
  K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
- Organizer
  4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  UCLAコンファレンス・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] ガンマ線照射後のSiC-MOSキャパシタ及びPiN ダイオードの電気的特性の変化
- Author(s)
  田中量也, 横関貴史, 藤田奈津子，岩本直也, 牧野高紘, 小野田忍, 大島武, 田中雄季, 神取幹郎, 吉江徹, 土方泰斗
- Organizer
  SiC及び関連半導体研究第22回講演会
- Place of Presentation
  埼玉会館（埼玉県さいたま市浦和区）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] 4H-SiCエピ膜中積層欠陥への熱酸化の影響について
- Author(s)
  宮野祐太郎，矢口裕之，土方泰斗，八木修平
- Organizer
  第60回春季応用物理学会講演会
- Place of Presentation
  厚木（神奈川工科大学）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] スパッタ薄膜成長による4H-SiC 基板中の非発光再結合中心生成
- Author(s)
  加藤寿悠，八木修平，土方泰斗，矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山（愛媛/松山大学）
- Data Source
  KAKENHI-PROJECT-24560365
[Presentation] Si及びSiC-MOSFETのI-V特性に対するガンマ線照射の影響
- Author(s)
  横関貴史, 田中量也, 藤田奈津子, 牧野高紘, 小野田忍, 大島武, 田中雄季, 神取幹郎, 吉江徹, 土方泰斗
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-24560365

1. YAGUCHI Hiroyuki (50239737)

# of Collaborated Projects: 5 results

# of Collaborated Products: 62 results
2. Ohshima Takeshi (50354949)

# of Collaborated Projects: 5 results

# of Collaborated Products: 79 results
3. Matsushita Yu-ichiro (90762336)

# of Collaborated Projects: 4 results

# of Collaborated Products: 8 results
4. ONABE Kentaro (50204227)

# of Collaborated Projects: 2 results

# of Collaborated Products: 37 results
5. KATAYAMA Ryuji (40343115)

# of Collaborated Projects: 2 results

# of Collaborated Products: 34 results
6. YAGI Shuhei (30421415)

# of Collaborated Projects: 2 results

# of Collaborated Products: 30 results
7. KUBOYA Shigeyuki (70583615)

# of Collaborated Projects: 2 results

# of Collaborated Products: 32 results
8. AKIYAMA Hidefumi (40251491)

# of Collaborated Projects: 2 results

# of Collaborated Products: 29 results
9. YOSHIDA Sadafumi (70302510)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. 藤ノ木享英 (10361354)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. 押山淳 (80143361)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
12. 波多野睦子 (00417007)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 櫻井鉄也 (60187086)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 吉岡裕典 (60712528)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 針井一哉 (00633900)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. ONODA Shinobu

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
17. 梅田享英

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

HIJIKATA Yasuto 土方 泰斗

Research Projects

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Co-Researchers

Realization of an entangled photon-pair emitting device using silicon carbide semiconductorPrincipal Investigator

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Generation of arbitrary polarized single-photons by injection of spin electric current to a silicon carbide MOS devicePrincipal Investigator

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Elucidation of SiC-MOS interfaces by developing electronic structure calculation methods

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Multi-scale calculations for complex correlation appearing in SiC oxidation and its impact on electronic properties

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Quantum state measurements of single photon sources in silicon carbide devices

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Development of an extreme environment resistive CCD using silicon carbidePrincipal Investigator

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Generation and control of quantum correlated photons from atomic-layer doped semiconductors

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Elucidation of formation mechanism of oxidation-induced fault in silicon carbide semiconductorsPrincipal Investigator

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Single Photon Generation from locally doped semiconductors

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テラヘルツ反射分光法による炭化珪素半導体の電気的特性の非破壊マッピング測定Principal Investigator

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Study on single photon emission utilizing isoelectronic traps

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Characterization of the Interfaces between IV-IV Semiconductors and Ultra-Thin Oxide films

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[Book] Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy2013

Author(s)

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Publisher

HIJIKATA Yasuto 土方泰斗