Tabuchi Masao 田渕雅夫

… Alternative Names

TABUCHI Masao 田渕雅夫

田淵雅夫タブチマサオ

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Researcher Number	90222124
Other IDs
External Links
Affiliation (Current)	2024: 名古屋大学, シンクロトロン光研究センター, 教授
Affiliation (based on the past Project Information) *help	2019 – 2023: 名古屋大学, シンクロトロン光研究センター, 教授 2013 – 2016: 名古屋大学, シンクロトロン光研究センター, 教授 2010 – 2014: 名古屋大学, シンクロトロン光研究センター, 特任教授 2013: 名古屋大学, 学内共同利用施設等, 教授 2012 – 2013: 名古屋大学, 学内共同利用施設等, 特任教授 … More 2007 – 2009: Nagoya University, 大学院・工学研究科, 准教授 2006: 名古屋大学, 大学院工学研究科, 助教授 2003 – 2005: Nagoya University, Dept.of Materials Science and Engineering, Associate Professor, 工学研究科, 助教授 2003: Nagoya University, Engineering, Associate Professor, 工学部, 助教授 2000 – 2002: 名古屋大学, 工学研究科, 講師 1996 – 1999: NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,LECTURER, 工学部, 講師 1993 – 1995: 名古屋大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Electronic materials/Electric materials / Applied materials science/Crystal engineering Except Principal Investigator Applied materials science/Crystal engineering / Electronic materials/Electric materials / Applied materials science/Crystal engineering / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 14:Plasma science and related fields / Crystal engineering / 電子材料工学 / Thin film/Surface and interfacial physical properties / Electron device/Electronic equipment
Keywords	Principal Investigator X線CTR散乱 / 化合物半導体 / 結晶成長 / InGaAs / OMVPE / X線回折 / その場測定 / X線CTR散乱測定 / ヨハンソン分光結晶 / その場観察 … More / 組成分布 / ヘテロ界面 / 蛍光EXAFS / MOCVD / crystal growth / X-ray diffraction / X-ray CTR scattering / analysis of multilayer structure / epitaxial growth / compound semiconductor / 装置調整法の確立 / 1次元検出器 / 2次元検出器 / 回折測定の簡便な高精度化 / 回折測定の簡便な高速化 / 界面 / OMCVD / 複雑な多層構造の解析 / エピタキシャル / Diffusion of In atoms / Alignment method of optics / Computer simulation of X-ray scattering / Portable measurement system / Synchrotron radiation / atomic scale distributions / distributions of impurity atoms / X-ray CTR scattering measurement / 相互拡散 / 原子層単位 / 界面構造 / 半導体ヘテロ構造 / 薄膜多層構造 / 不純物原子 / In原子の拡散 / アライメント調整法の確立 / X線散乱の計算機シミュレーション / 可搬な測定系 / 放射光 / 原子層単位の原子分布 / 不純物原子分布 / 稼動部のない測定 / X線反射率測定 / X線散乱 / X線集光光学系 / 回転機構排除 / 分光集光結晶 / X線回折測定 / 量子井戸 / 半導体超微細化 / 結晶工学 / 回転移動不要 / 角度分散のあるX線 / 既存の実験室系X線源 / 半導体結晶成長 / X 線回折・散乱 / GaAs / ZnSe / デルタドーピング / InP / GaInN / 原子層 / 表界面 / 異種接合構造 / 不純物 / Er添加InP / 1原子層 / InPAs … More Except Principal Investigator 半導体 / InP / Er / 量子機能 / 結晶成長 / 希土類元素 / 蛍光EXAFS法 / OMVPE法 / STM / AFM / 量子効果 / ErP / ランタノイド化合物 / ATOMIC LAYER / SEMICONDUCTORS / QUANTUM FUNCTIONS / HYBRID STRUCTURES / METALS / INSULATORS / OMVPE / 複合構造 / 金属 / 絶縁体 / 共添加 / エルビウム / 量子ドット / 有機金属気相エピタキシャル法 / III-V族半導体 / X線CTR散乱法 / GaInP / 希土類イオン / 局在スピン / EXAFS / 1原子層 / 成長初期過程 / 蛍光EXAFS / タングステン / 金属不純物ドープ / 金属援用終端法 / 転位 / ダイヤモンド / ガリウムヒ素半導体 / 動態観測 / 損傷敏感試料 / 電子顕微鏡 / 半導体フォトカソード / AlGaAs半導体 / 窒化ガリウム半導体 / パルス電子ビーム / 負電子親和力表面 / 電子ビーム / フォトカソード / 結晶欠陥 / control of heterointerface / doubleheterostructures / erbium / stimulated emission / atomically-controlled growth / materials for new semiconductor lasers / semiconductors / rare-earth-doped III-V / ヘテロ界面制御 / ダブルヘテロ構造 / 誘導放出 / 原子レベル制御成長 / 新規半導体レーザ用材料 / 希土類添加III-V族半導体 / Ultra-high Doping / Light Amplifier / Semiconductors / Co-doping / Rare-Earth Elements / 希上類元素 / 超高濃度 / 光増幅素子 / semimetal-semiconductor transition / quantum effects / atomicallv-controlled growth / semiconductor structures / semimetal / lanthanoide / 半金属―半導体転移 / 半金属-半導体転移 / 原子層制御成長 / 半導体低次元量子構造 / 半金属 / GROWTH CONTROL / HETEROSTRUCTURE GROWTH / CRYSTAL STRUCTURES / INTERFACE / SURFACE / 制御 / ヘテロ成長 / 結晶構造 / 界面 / 表面 / X-ray CTR scattering / Super-heteroepitaxy / Lanthanoide / δド-ピング / STS / 走査トンネル顕微鏡 / 原子間刀顕微鏡 / 原子層制御スーパーヘテロエピタキシャル / GROWTH SYSTEM / 作製装置 / GROWTH CONDITIONS / PHOTOREFLECTANCE / X-RAY CTR / HETEROSTRUCTURE / QUANTUM STRUCTURES / 評価 / 成長 / 原子層制御 / 量子構造 / 異種V族 / INITIAL GROWTH PROCESS / FLUORESCENCE EXAFS / SENICONDUCTORS / エピタキシャル成長 / 低温物性 / 鉄系超伝導体 / 分子線エピタキシー法 / 超伝導材料 / 量子ビーム / 量子エレクトロニクス / 表面・界面物性 / スピントロニクス / 金属内包フラーレン / 配列ナノ空間物質 / X線構造解析 / CTR散乱法 / ヘテロ界面 / 受光素子 / 液滴ヘテロエピタキシー法 / 発光素子 / III-V族化合物半導体 / 有機金属気相成長法 / 白色LED / 臨界成長温度 / 局所構造 / 半導体レーザ / Dy / 2〜3μm帯発光 / ジスプロシウム / X線CTR法 / GaP / 干渉の制御 / 原子位置 / X線 / 干渉効果 / 電子波 / 結合長 / 表面置換 / 界面構造 / InPAs / 原子レベル Less

Interaction between transition metal impurities and dislocations in diamond crystals
- Principal Investigator
  
  花田賢志
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  公益財団法人科学技術交流財団(あいちシンクロトロン光センター、知の拠点重点研究プロジェクト統括部)
Semiconductor electron beam source that brings fine-area dynamics observation technology to damage sensitive samples
- Principal Investigator
  
  Nishitani Tomohiro
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 14:Plasma science and related fields
- Research Institution
  Nagoya University
In-situ observation of threading dislocation conversion in high-quality SiC growth
- Principal Investigator
  
  Ujihara Toru
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Nagoya University
High quality thin films of iron-based superconductors and the fabrication technology of superconducting junctions
- Principal Investigator
  
  HIROSHI Ikuta
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Improvement of quantum efficiency of super-high brightness and high spin-polarization photocathodes
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya Industrial Science Research Institute
  Nagoya University
Development of X-ray diffractomator to realize in-situ observation of crystal growthPrincipal Investigator
- Principal Investigator
  
  TABUCHI MASAO
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Development of X-ray scattering measurement system for in-situ observations of semiconductor crystalline growthPrincipal Investigator
- Principal Investigator
  
  TABUCHI Masao
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Intrinsic Hetero-interface Structures and Their Formation
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
分散量子ドットによる超広帯域可視・赤外光デバイスの作製
- Principal Investigator
  
  竹田美和
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya University
Analysis of semiconductor multi-layer structure by X-ray CTR scattering measurementPrincipal Investigator
- Principal Investigator
  
  TABUCHI Masao
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Distributions of impurity atoms in semiconductors analyzed by X-ray CTR scattering measurementPrincipal Investigator
- Principal Investigator
  
  TABUCHI Masao
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and O
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Materials for new semiconductor lasers; atomically-controlled, growth of rare-earth-doped III-V semiconductors with high quality
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka University
  Nagoya University
III-V族化合物半導体における希土類原子配置による局在スピンの制御と物件
- Principal Investigator
  
  藤原康文
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Nagoya University
Atomically-controlled growth and properties of low-dimensional lanthanoide/semiconductor quantum structures
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
III-V族化合物半導体における希土類原子配置による局在スピンの制御と物性
- Principal Investigator
  
  藤原康文
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Nagoya University
室温動作2〜3μm帯半導体レーザ用材料:Dy添加III-V族半導体の作製と発光特性
- Principal Investigator
  
  藤原康文
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
III-V族化合物半導体における希土類原子配置による局在スピンの制御と物性
- Principal Investigator
  
  藤原康文
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
X線CTR散乱法による異種接合半導体表界面の結晶構造評価Principal Investigator
- Principal Investigator
  
  田渕雅夫
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
CRYSTAL STRUCTURE ANALYSIS OF SURFACE AND INTERFACE 1 ATOMIC LAYER AND CONTROL OF HETEROSTRUCTURE GROWTH
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NAGOYA UNIVERSITY
蛍光EXAFS法、X線CTR法を利用したIII/V族半導体接合界面の原子配列の解析Principal Investigator
- Principal Investigator
  
  田渕雅夫
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
ATOMIC-LAYER CONTROLLED SUPER-HETEROEPITAXY AND PROPERTIES OF LANTHANOIDE/SEMICONDUCTOR STRUCTURES
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NAGOYA UNIVERSITY
RESEARCH ON ATOMIC LAYER CONTROLLED GROWTH AND CHARACTERIZATION OF SEMICONDUCTOR QUANTUM STRUCTURES WITH DIFFERENT GROUP-V ATOMS
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NAGOYA UNIVERSITY
DEVELOPMENT OF FABRICATION SYSTEM FOR NEW QUANTUM FUNCTIONAL MATERIALS OF SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY
X線励起電子波による干渉効果とその制御
- Principal Investigator
  
  竹田美和
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
蛍光EXAFS、X線CTR測定によるIII/V族半導体接合界面での原子配列の解析Principal Investigator
- Principal Investigator
  
  田淵雅夫
- Project Period (FY)
  1994
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
蛍光EXAFSによる成長素過程のその場測定と原子レベルミクロ構造の制御
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Nagoya University
RESEARCH ON NEW QUANTUM FUNCTIONAL MATERIALS BY SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  1992 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  NAGOYA UNIVERSITY

[Book] 「回折結晶学の基礎」結晶工学の基礎、第6章2010
- Author(s)
  田渕雅夫
- Total Pages
  16
- Publisher
  応用物理学会
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency2021
- Author(s)
  Morita Iori、Ishikawa Fumitaro、Honda Anna、Sato Daiki、Koizumi Atsushi、Nishitani Tomohiro、Tabuchi Masao
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBK02-SBBK02
- DOI
  10.35848/1347-4065/abd6e0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00666
[Journal Article] In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy2014
- Author(s)
  G.X. Ju, Y. Honda, M. Tabuchi, Y. Takeda, H. Amano
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246003
[Journal Article] Growth of a smooth CaF2 layer on NdFeAsO thin film2014
- Author(s)
  N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada, and H. Ikuta
- Journal Title
  
  J. Phys. Conf. Ser.
  
  Volume: 507 Issue: 1 Pages: 012047-012047
- DOI
  10.1088/1742-6596/507/1/012047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246007
[Journal Article] Growth of BaFe_2(As, P)_2 thin films by molecular beam epitaxy and strain effect on superconducting properties2014
- Author(s)
  T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta
- Journal Title
  
  Superconductor Science and Technology
  
  Volume: 27 Issue: 6 Pages: 65005-65005
- DOI
  10.1088/0953-2048/27/6/065005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10465, KAKENHI-PROJECT-24246007
[Journal Article] In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy2014
- Author(s)
  Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano
- Journal Title
  
  J. Appl. Phys
  
  Volume: 115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360009
[Journal Article] X-ray investigation of GaInN single quamtum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy2013
- Author(s)
  G.X. Ju, Y. Kato, Y. Honda, M. Tabuchi, Y. Takeda, H. Amano
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 11 Issue: 3-4 Pages: 393-396
- DOI
  10.1002/pssc.201300670
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246003
[Journal Article] Critical current density and grain boundary property of BaFe_2(As, P)_2 thin films2013
- Author(s)
  A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, Y. Takeda. H. Ikuta
- Journal Title
  
  Physica C : Superconductivity
  
  Volume: 494 Pages: 181-184
- DOI
  10.1016/j.physc.2013.04.047
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J10465, KAKENHI-PROJECT-24246007
[Journal Article] In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum well2013
- Author(s)
  G. X. Ju, S. Fuchi, M. Tabuchi, Y. Takeda
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 370 Pages: 36-41
- DOI
  10.1016/j.jcrysgro.2012.09.028
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246003
[Journal Article] Analysis of Cs/GaAs NEA surface by XAFS2013
- Author(s)
  K.Tsubota, M.Tabuchi, T.Nishitani, A.Era, Y.Takeda
- Journal Title
  
  J. Phys. : Conf. Ser.
  
  Volume: Vol. 430 Pages: 12079-12079
- Data Source
  KAKENHI-PROJECT-23360009
[Journal Article] In situ X-ray measurements of MOVPE growth of In_xGa_<1-x>N single quantum well2013
- Author(s)
  G.X.Ju, S.Fuchi, M.Tabuchi, and Y.Takeda
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol. 370 Pages: 36-41
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246003
[Journal Article] In situ X-ray reflectivity of indium supplied on GaN templates by metalorganic vapor phase epitaxy2013
- Author(s)
  G.X. Ju, S. Fuchi, M. Tabuchi, and Y. Takeda
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 114
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246003
[Journal Article] In situ X-ray reflectivity measurements on annealed InxGa1-xN epilayer grown by metalorganic vapor phase epitaxy2013
- Author(s)
  G.X. Ju, S. Fuchi, M. Tabuchi, Y. Takeda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- NAID
  210000142606
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23246003
[Journal Article] Initial Stages of High-Temperature CaF2/Si(001) Epitaxial Growth Studied by Surface X-Ray Diffraction2011
- Author(s)
  S.Suturin, N.Sokolov, A.Banshchikov, R.Kyutt, O.Sakata, T.Shimura, J.Harada, M.Tabuchi, and Y.Takeda
- Journal Title
  
  J. Nanoscience and Nanotechnology
  
  Volume: Volume11, Number 4 Pages: 2990-2996
- Data Source
  KAKENHI-PROJECT-23360009
[Journal Article] X-ray characterization of GaN and related materials at growth temperatures system design and measurements2011
- Author(s)
  Y. Takeda, K. Ninoi, G. Ju, H. Kamiya, T. Mizuno, S. Fuchi, and M. Tabuchi
- Journal Title
  
  Materials Science and Engineering
  
  Volume: Vol.24 Pages: 12002-12002
- DOI
  10.1088/1757-899x/24/1/012002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator2011
- Author(s)
  H. Tameoka, T. Kawase, M. Tabuchi, and Y. Takeda
- Journal Title
  
  Physica Status Solidi(c)
  
  Volume: ol. 8, No.2 Issue: 2 Pages: 294-296
- DOI
  10.1002/pssc.201000508
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] X-ray characterization of GaN and related materials at growth temperatures-system design and measurements2011
- Author(s)
  Y.Takeda, S.Fuchi, M.Tabuchi, 他
- Journal Title
  
  IOP Conf.Series : Materials Science and Engineering
  
  Volume: 24
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator2011
- Author(s)
  M.Tabuchi, H.Tameoka, T.Kawase, and Y.Takeda
- Journal Title
  
  IOP Conf. Ser.
  
  Volume: Vol. 24 Pages: 12007-12007
- Data Source
  KAKENHI-PROJECT-23360009
[Journal Article] X-ray characterization at growth temperatures of In_xGa_<1-x>N growth by MOVPE2011
- Author(s)
  S.Fuchi, M.Tabuchi, Y.Takeda, 他
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 1143-1146
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator2011
- Author(s)
  H.Tameoka, T.Kawase, M.Tabuchi, and Y.Takeda
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8, No.2 Pages: 294-296
- Data Source
  KAKENHI-PROJECT-23360009
[Journal Article] Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator2011
- Author(s)
  M.Tabuchi, H.Tameoka, T.Kawase, Y.Takeda
- Journal Title
  
  IOP Conf.Ser.
  
  Volume: 24 Pages: 12007-12007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360009
[Journal Article] Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures2011
- Author(s)
  S.Fuchi, M.Tabuchi, Y.Takeda, 他
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 318 Pages: 1139-1142
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Ga and As composition profiles in InP/GaInAs/InP heterostructures-X-ray CTR scattering and cross-sectional STM measurements2010
- Author(s)
  Y. Takeda, M. Tabuchi, and A. Nakamura
- Journal Title
  
  Journal of Physics : Condensed Matter
  
  Volume: Vol.22 Issue: 47 Pages: 474011-474011
- DOI
  10.1088/0953-8984/22/47/474011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Ga and As composition profiles in InP/GaInAs/InP heterostructures-X-ray CTR scattering and cross-sectional STM measurements2010
- Author(s)
  Y.Takeda, M.Tabuchi, 他
- Journal Title
  
  Journal of Physics : Condensed Matter
  
  Volume: 22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures2010
- Author(s)
  K. Ninoi, G. Ju, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.318 Issue: 1 Pages: 1139-1142
- DOI
  10.1016/j.jcrysgro.2010.10.201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] X-ray characterization at growth temperatures of InxGa1-xN growth by MOVPE2010
- Author(s)
  G. Ju, K. Ninoi, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: Vol.318 Issue: 1 Pages: 1143-1146
- DOI
  10.1016/j.jcrysgro.2010.11.051
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures2009
- Author(s)
  M. Tabuchi, A. Mori, H. Tameoka, K. Fujii, and Y. Takeda
- Journal Title
  
  Transactions of the Materials Research Society of Japan
  
  Volume: Vol.34, No.4 Pages: 593-595
- NAID
  130004676258
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures2009
- Author(s)
  M.Tabuchi, Y.Takeda, 他
- Journal Title
  
  Trans.Mat.Res.Soc.Jpn. 34
  
  Pages: 593-595
- NAID
  130004676258
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System2009
- Author(s)
  Y. Takeda, T. Mizuno, H. Kamiya, K. Ninoi, and M. Tabuchi
- Journal Title
  
  Transactions of the Materials Research Society of Japan
  
  Volume: Vol.34, No.4 Pages: 585-588
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System2009
- Author(s)
  Y.Takeda, M.Tabuchi, 他
- Journal Title
  
  Trans.Mat.Res.Soc.Jpn. 34
  
  Pages: 585-588
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator2009
- Author(s)
  M. Tabuchi, H. Tameoka, T. Kawase, and Y. Takeda
- Journal Title
  
  Transactions of the Materials Research Society of Japan
  
  Volume: Vol.34, No.4 Pages: 589-5918
- NAID
  130004676257
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator2009
- Author(s)
  M.Tabuchi, Y.Takeda, 他
- Journal Title
  
  Trans.Mat.Res.Soc.Jpn. 34
  
  Pages: 589-591
- NAID
  130004676257
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Buried Heterostructure of nitride semiconductors revealed by laboratory level X-ray CTR scattering2008
- Author(s)
  Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
- Journal Title
  
  Transactions of the Materials Research Society of Japan
  
  Volume: Vol.33 Pages: 547-550
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-ray GTR Scattering2008
- Author(s)
  Y. Takeda, Y. Maeda, T. Mizuno, M. Tabuchi
- Journal Title
  
  Trans. Mat. Res. Soc. Jpn 33
  
  Pages: 547-550
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360006
[Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semi- conductor hetero-interfaces2008
- Author(s)
  Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda
- Journal Title
  
  Trans. Mat. Res. Soc. Jpn. Vol. 33
  
  Pages: 591-594
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces2008
- Author(s)
  Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi and Y. Takeda
- Journal Title
  
  Trans. Mat. Res. Soc. Jpn 33
  
  Pages: 591-594
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360006
[Journal Article] X-ray CTR scatterittg measurements using conventional x-ray source to study semiconductor hetero-interfaces2008
- Author(s)
  Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, Y. Takeda
- Journal Title
  
  Trans. Mat. Res. Soc. Jpn. 33
  
  Pages: 591-594
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces2008
- Author(s)
  Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda
- Journal Title
  
  Transactions of the Materials Research Society of Japan
  
  Volume: Vol.33 Pages: 591-594
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Buried Heterostructure of nitride semi-conductors revealed by laboratory level X-ray CTR scattering2008
- Author(s)
  Y. Takeda, Y. Maeda, T. Mizuno and M. Tabuchi
- Journal Title
  
  Trans. Mat. Res. Soc. Jpn. Vol.33
  
  Pages: 547-550
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Buried Heterostructure of nitride semiconductors revealed by laboratory level X-ray CTR scattering2008
- Author(s)
  Y. Takeda, Y. Maeda, T. Mizuno. M. Tabuchi
- Journal Title
  
  Trans. Mat. Res. Soc. Jpn. 33
  
  Pages: 547-550
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interfac2007
- Author(s)
  M. Tabuchi
- Journal Title
  
  J. Phys.: Conference Series 83
  
  Pages: 12031-12031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360006
[Journal Article] Study on buried interfaces in semiconductor heterostructures by X-ray reflectivity2007
- Author(s)
  Y. Takeda and M. Tabuchi
- Journal Title
  
  Transactions of the Materials Research Society of Japan
  
  Volume: Vol.32, No.1 Pages: 187-192
- NAID
  130007922814
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007
- Author(s)
  A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
- Journal Title
  
  Indium Phosphide and Related Materials 2007 IPRM2007
  
  Pages: 315-318
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] GaNおよび関運材料のX線非破壊その場評価システムの開発2007
- Author(s)
  Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
- Journal Title
  
  第7回赤崎記念研究センターシンポジウム資料 7
  
  Pages: 19-23
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] The importance to reveal buried interfaces in the semicondutor heterostructure devices2007
- Author(s)
  Y. Takeda and M. Tabuchi
- Journal Title
  
  J. Phys. Conference Series 83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement2007
- Author(s)
  M. Tabuchi and Y. Takeda
- Journal Title
  
  J. Cryst. Growth Vol. 298
  
  Pages: 12-17
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices2007
- Author(s)
  Y. Takeda and M. Tabuchi
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: Vol.83 Pages: 12002-12002
- DOI
  10.1088/1742-6596/83/1/012002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Analysis of In Distribution in GaInN/GaN Multilayer Structures by X-ray CTR Scattering2007
- Author(s)
  M.Tabuchi, Y.Ohtake, Y.Takeda
- Journal Title
  
  Transactions of the Materials Research Society of Japan 32巻・1号
  
  Pages: 219-222
- NAID
  130007922817
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface2007
- Author(s)
  M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: Vol.83 Pages: 12031-12031
- DOI
  10.1088/1742-6596/83/1/012031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Study on Buried Interfaces in Semiconductor Heterostructures by X-ray Reflectivity2007
- Author(s)
  Y.Takeda, M.Tabuchi
- Journal Title
  
  Transactions of the Materials Research Society of Japan 32巻・1号
  
  Pages: 187-192
- NAID
  130007922814
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices (invited)2007
- Author(s)
  Y. Takeda, M. Tabuchi and J. Phys.
- Journal Title
  
  Conference Series Vol.83
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices2007
- Author(s)
  Y. Takeda and M. Tabuchi
- Journal Title
  
  J. Phys. : Conference Series Vol. 83
  
  Pages: 12002-12002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360006
[Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface2007
- Author(s)
  M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda
- Journal Title
  
  J. Phys. Conference Series 83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface2007
- Author(s)
  M. Tabuchi, A. Mori, Y. Ohtake and Y. Takeda
- Journal Title
  
  J. Phys. : Conference Series Vol. 83
  
  Pages: 12031-12031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360006
[Journal Article] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering2007
- Author(s)
  M. Tabuchi, Y. Ohtake and Y. Takeda
- Journal Title
  
  Trans. Mat. Res. Soc. Jpn. Vol.32 No.9
  
  Pages: 219-222
- NAID
  130007922817
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation2007
- Author(s)
  Y.Ohtake, T.Eguchi, S.Miyake, W.S.Lee, M.Tabuchi, Y.Takeda
- Journal Title
  
  AIP Conference Proceedings 879巻
  
  Pages: 1619-1622
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Study on buried interfaces in semiconductor heterostructures by X-ray reflectivity (invited)2007
- Author(s)
  Y. Takeda and M. Tabuchi
- Journal Title
  
  Trans. Mat. Res. Soc. Jpn. Vol. 32, No. 1
  
  Pages: 187-192
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Atomic Scale Analysis of MOVPE Grown Heterostructures by X-ray Crystal Truncation Rod Scattering Measurement2007
- Author(s)
  M.Tabuchi, Y.Takeda
- Journal Title
  
  J. Cryst. Growth 298巻
  
  Pages: 12-17
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering2007
- Author(s)
  M. Tabuchi, Y. Ohtake, and Y. Takeda
- Journal Title
  
  Transactions of the Materials Research Society of Japan
  
  Volume: Vol.32, No.9 Pages: 219-222
- NAID
  130007922817
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Formation of Patterned GaInAs/GaAs Hetero-structures Using Amorphous Arsenic Mask2007
- Author(s)
  Y.Noritake, T.Yamada, M.Tabuchi, Y.Takeda
- Journal Title
  
  J. Cryst. Growth 301-302巻
  
  Pages: 876-879
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Investigation of Hetero-interfaces Formed in InP/GaInAs/InP Structures with Different Growth Rates2006
- Author(s)
  Y.Ohtake, T.Eguchi, S.Miyake, W.S.Lee, M.Tabuchi, Y.Takeda
- Journal Title
  
  Indium Phosphide and Related Materials 2006 IPRM2006
  
  Pages: 290-293
- Data Source
  KAKENHI-PROJECT-18106001
[Journal Article] Investigation of Hetero-Interfaces formed in InP/GaInAs/InP Structures with Different Growth Rates2006
- Author(s)
  Y.Ohtake, T.Eguchi, S.Miyake, W.S.Lee, M.Tabuchi, Y.Takeda
- Journal Title
  
  The Indium Phosphide and Related Materials Conference (IPRM06) 18
- Data Source
  KAKENHI-PROJECT-16656107
[Journal Article] Perturbation method of analysis of crystal truncation rod dat2005
- Author(s)
  I.K.Robbinson, M.Tabuchi, S.Hisadome, R.Oga, Y.Takeda
- Journal Title
  
  Journal of Applied Crystallography 8
  
  Pages: 299-305
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360006
[Journal Article] Perturbation method of analysis of crystal truncation rod data2005
- Author(s)
  I.K.Robbinson, M.Tabuchi, S.Hisadome, R.Oga, Y.Takeda
- Journal Title
  
  Journal of Applied Crystallography 8
  
  Pages: 299-305
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360006
[Journal Article] Collection of reciprocal space maps using imaging plates at the Australian National Beamline Facility at the Photon Factory2004
- Author(s)
  S.Mudie, K.Pavlov, M.Morgan, J.Hester, M.Tabuchi, Y.Takeda
- Journal Title
  
  J.Synchrotron Radiation 11
  
  Pages: 406-413
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360006
[Journal Article] Size dependence of the work function in InAs quantum dots on GaAs(001) as studied by Kelvin force probe microscopyc2004
- Author(s)
  T.Yamauchi, M.Tabuchi, A.Nakamura
- Journal Title
  
  Applied Physics Letters 84(19)
  
  Pages: 3834-3836
- Data Source
  KAKENHI-PROJECT-16656107
[Journal Article] X線 CTR散乱法と断面STMによるヘテロ界面形成過程の考察-OMVPE法によるInP/IhGaAs/INPの形成-2004
- Author(s)
  竹田美和, 田渕雅夫, 大賀涼, 山川市朗, 中村新男
- Journal Title
  
  信学技報 CPM2004-40
  
  Pages: 53-57
- Data Source
  KAKENHI-PROJECT-16656107
[Journal Article] Collection of reciprocal space maps using imaging plates at the Australian National Beamline Facility at the Photon Factory2004
- Author(s)
  S.Mudie, K.Pavlov, M.Morgan, J.Hester, M.Tabuchi, Y.Takeda
- Journal Title
  
  J. Synchrotron Radiation 11
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360006
[Presentation] Impact of As2 pressure on the molecular beam epitaxial growth of AlGaAs superlattice at temperature over 700℃2021
- Author(s)
  Reiji Suzuki, Iori Morita, Fumitaro Ishikawa, Anna Honda, Daiki Sato, Atsushi Koizumi, Tomihiro Nishitani, Masao Tabuchi
- Organizer
  21st International Conference on Molcular Beam Epitaxy (ICMBE 2021), September 6-9, ONLINE
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] As2を利用した700℃以上成長温度でのフォトカソード構造AlGaAs/GaAs超格子MBE成長2021
- Author(s)
  鈴木玲士, 石川史太郎, 本田杏奈, 佐藤大樹, 小泉淳, 西谷智博, 田渕雅夫
- Organizer
  第82回応用物理学会秋季学術講演会, 2021年9月12日, オンライン開催
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode2020
- Author(s)
  I. Morita, F. Ishikawa, A. Honda, D. Sato, A. Koizumi, T. Nishitani, M. Tabuchi
- Organizer
  Solid State Devices and Materials 2020
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] フォトカソード応用のためのAlGaAs系ヘテロ構造の分子線エピタキシャル成長2019
- Author(s)
  森田伊織, 石川史太郎, 西谷智博, 田渕雅夫
- Organizer
  2019年度応用物理学会中国四国支部若手半導体研究会
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] フォトカソード応用AlGaAs系材料のMBE成長2019
- Author(s)
  森田伊織, 石川史太郎, 西谷智博, 田渕雅夫
- Organizer
  2019年度応用物理・物理系学会中国四国支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] SEM imaging using photo-electron beam by semiconductor photocathode2019
- Author(s)
  Tomohiro Nishitani, Daiki Sato, Haruka Shikano, Tomoaki Kawamata, Atsushi Koizumi, Hokuto Iijima, Masao Tabuchi
- Organizer
  The 63th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] フォトカソード応用AlGaAs超格子試料のMBE成長2019
- Author(s)
  森田伊織, 石川史太郎, 西谷智博, 田渕雅夫
- Organizer
  2019年度応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] MBE growth of AlGaAs superlattice for photocathode2019
- Author(s)
  I. Morita, F. Ishikawa, T. Nishitani and M. Tabuchi
- Organizer
  38th Electronic Materials Symposium EMS-38
- Data Source
  KAKENHI-PROJECT-19H00666
[Presentation] Atomic Level In-Situ Monitoring during Epitaxial Growth of Group III Nitrides2013
- Author(s)
  G.X. Ju, S. Fuchi, M. Tabuchi, Y. Takeda, Y. Honda, M. Yamaguchi, and
- Organizer
  第74回応用物理学関係連合講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] Continuous In situ X-ray Reflectance on InxGa1-xN Single Quantum Well by MOVPE2013
- Author(s)
  G.X. Ju, Y. Honda, S. Fuchi, M. Tabuchi, Y. Takeda, H. Amano
- Organizer
  OPTICS & PHOTONICS International Congress 2013, Conference on LED and Its Industrial Application’13 (LEDIA’13)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] Continuous in situ X-ray reflectivity measurement on InGaN epitaxial growth by MOVPE2013
- Author(s)
  G.X Ju, Y. Honda, M. Tabuchi, Y. Takeda, H. Amano
- Organizer
  The 17th International Conference on Crystal Growth (ICCGE-17)
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] 化合物半導体界面構造のX 線CTR 散乱測定による解析 -あいちSR の現状をまじえて-2013
- Author(s)
  田渕雅夫
- Organizer
  Workshop: CROSSroads of Users and J-PARC, 第7回「機能する界面、反応する表面」
- Place of Presentation
  いばらき量子ビーム研究センター
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] In situ X-ray investigation on InGaN SQWs with various growth conditions of quantum barrier by MOVPE2013
- Author(s)
  G.X Ju, Y. Honda, M. Tabuchi, Y. Takeda, H. Amano
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Washington DC , USA
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] In situ X-ray investigation on InGaN SQWs with various growth conditions o of GaN barriers by MOVPE2013
- Author(s)
  G.X. Ju, S. Fuchi, M. Tabuchi, Y. Takeda, H. Amano
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha University, Kyotanabe Campus, Japan.
- Data Source
  KAKENHI-PROJECT-23246003
[Presentation] 窒化物半導体結晶の特異構造形成を理解するためのX線によるその場観察装置の開2012
- Author(s)
  田渕雅夫、益田征典、安西孝太、鞠光旭、二木浩之、森康博、渕真悟、竹田美和
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学早稲田キャンパス
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] GaAs(110)基板上に作製したCs/GaAs-NEA表面2012
- Author(s)
  坪田光治、恵良淳史、西谷智博、田渕雅夫
- Organizer
  第15回XAFS 討論会、1O12
- Place of Presentation
  白兎会館、鳥取
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] Observation of Position Dependence of InP/GaInAsP/InP Quantum Well Structure Grown on Pattern-Masked Substrate2012
- Author(s)
  M. Tabuchi
- Organizer
  Interational Union of Materials Research Scientists - Inter. Conf. Electronic Materials 2012 (IUMRS-ICEM 2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] GaAs に吸着したCs が作るNEA 表面のXAFS測定2012
- Author(s)
  坪田光治、恵良淳史、田渕雅夫、竹田美和、西谷智博
- Organizer
  第28回PF シンポジウム、UG-01-08
- Place of Presentation
  つくば国際会議場
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] 窒化物半導体結晶の特異構造形成を理解するためのX 線によるその場観察装置の開発2012
- Author(s)
  田渕雅夫、益田征典、安西孝太、鞠光旭、二木浩之、森康博、渕真悟、竹田美和
- Organizer
  第59回応用物理学関係連合講演会、15p-F11-3
- Place of Presentation
  早稲田大学早稲田キャンパス
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] Analysis of Cs/GaAs NEA surface by XAFS2012
- Author(s)
  K.Tsubota, A.Era, M.Tabuchi, T.Nishitani, Y.Takeda
- Organizer
  The 15th Inter. Conf. X-ray Absorption Fine Structure (XAFS15), I1274
- Place of Presentation
  Bejin, China
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] Observation of Position Dependence of InP/GaInAsP/InP Quantum Well Structure Grown on Pattern-Masked Substrate2012
- Author(s)
  M.Tabuchi, K.Fujii, O.Sakata, M.Sugiyama, and Y.Takeda
- Organizer
  Interational Union of Materials Research Scientists Inter. Conf. Electronic Materials 2012 (IUMRS-ICEM 2012), D7-101756
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum well2012
- Author(s)
  渕、田渕、竹田, 他
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Development of X-ray diffractometer for X-ray CTR measurement using Johansson monochromator and quick measurements2011
- Author(s)
  M.Tabuchi, Y.Takeda, 他
- Organizer
  11th Akasaki Research Center Symposium
- Place of Presentation
  名古屋大学(愛知県)(招待講演)
- Year and Date
  2011-12-09
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] ヨハンソン分光結晶を用いたX 線CTR 散乱の短時間測定系の開発2011
- Author(s)
  二木浩之、益田征典、森康博、田渕雅夫、竹田美和
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会、17
- Place of Presentation
  学習院大学創立100周年記念会館
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] 蛍光収量法によるNEA 表面作製中のGaAs上へのCs 吸着量の測定2011
- Author(s)
  坪田光治、恵良淳史、田渕雅夫、竹田美和、西谷智博
- Organizer
  応用物理学会結晶工学分科会主催2011年・年末講演会、18
- Place of Presentation
  学習院大学創立100周年記念会館
- Year and Date
  2011-12-15
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] New X-ray CTR scattering measurement system using conventional X-ray source for in-situ observation of OMVPE growth of nitride semiconductor heterostructures2010
- Author(s)
  K. Ninoi, G. Ju, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] In_xGa_<1-x>N grown by MOVPE installed in the CTR scattering measurement system2010
- Author(s)
  渕、田渕、竹田, 他
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X-Ray Characterization of Semiconductor Heterostructures at the Atomic-Level2010
- Author(s)
  Y. Takeda and M. Tabuchi
- Organizer
  2010 International Symposium on Crystal Growth
- Place of Presentation
  Hanyang University, Seoul, Korea
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Growth and characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system2010
- Author(s)
  Y. Takeda, H. Kamiya, K. Ninoi, G. X. Ju, S. Fuchi, and M. Tabuchi
- Organizer
  9th Akasaki Research Center Symposium
- Place of Presentation
  Hotel Rubura Ohzan, Nagoya, Japan
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Growth temperature and room temperature characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system2010
- Author(s)
  Y. Takeda, K. Ninoi, G. X. Ju, S. Fuchi, and M. Tabuchi
- Organizer
  10th Akasaki Research Center Symposium
- Place of Presentation
  Hotel Rubura Ohzan, Nagoya, Japan
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] New X-ray CTR scattering measurement system using conventional X-ray source for in-situ observation of OMVPE growth of nitride semiconductor heterostructures2010
- Author(s)
  S.Fuchi, M.Tabuchi, Y.Takeda, 他
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Growth temperature and room temperature characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system2010
- Author(s)
  Y.Takeda, S.Fuchi, M.Tabuchi, 他
- Organizer
  10th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya (Japan)(招待講演)
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator2010
- Author(s)
  Y.Takeda, M.Tabuchi, 他
- Organizer
  The 37th International Symposium Compound Semi-conductors (ISCS2010)
- Place of Presentation
  Kagawa (Japan)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 半導体成長環境下におけるその場X線反射率測定2010
- Author(s)
  渕、田渕、竹田, 他
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 窒化物半導体のOMVPE成長過程その場測定用実験室系X線CTR散乱測定装置の開発2010
- Author(s)
  渕、田渕、竹田, 他
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X-ray CTR scattering measurement at growth temperature of In_xGa_<1-x>N grown by MOVPE2010
- Author(s)
  S.Fuchi, M.Tabuchi, Y.Takeda, 他
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Development of X-ray diffractometer for quick X-ray CTR scattering observation of thin-film crystal growth equipped with focusing monochromator2010
- Author(s)
  Y.Takeda, S.Fuchi, M.Tabuchi, 他
- Organizer
  The 16th International Conference on Crystal Growth (ICCG-16)
- Place of Presentation
  Beijing (China)(招待講演)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X-ray characterization of semiconductor heterostructures at the atomic-level2010
- Author(s)
  Y.Takeda, M.Tabuchi
- Organizer
  2010 International Symposium on Crystal Growth
- Place of Presentation
  Seoul (Korea)(招待講演)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Growth and characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system2010
- Author(s)
  竹田美和, 田渕雅夫, 他
- Organizer
  9^<th> Akasaki Research Center Symposium
- Place of Presentation
  ルブラ王山、名古屋
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator2010
- Author(s)
  H. Tameoka, T. Kawase, M. Tabuchi, and Y. Takeda
- Organizer
  The 37th International Symposium Compound Semiconductors(ISCS2010)
- Place of Presentation
  FrC3-7, Takamatsu Symbol Tower, Kagawa, Japan
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X-ray CTR scattering measurement at growth temperature of InxGa1-xN grown by MOVPE2010
- Author(s)
  G. Ju, K. Ninoi, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 半導体OMVPE成長過程のその場X線反射率測定の試み2010
- Author(s)
  渕、田渕、竹田, 他
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会
- Place of Presentation
  学習院大学(東京都)
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 半導体のOMVPE成長のその場測定用実験室系X線CTR散乱測定装置の開発2009
- Author(s)
  田渕雅夫, 竹田美和, 他
- Organizer
  応用物理学会結晶工学分科会
- Place of Presentation
  学習院大学
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 結晶成長のその場観察を目指した新しいX線CTR散乱装置の開発2009
- Author(s)
  田渕雅夫, 竹田美和, 他
- Organizer
  第39回結晶成長学会国内会議
- Place of Presentation
  名古屋大学
- Year and Date
  2009-11-14
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 実験室系X線CTR散乱測定装置におけるソーラスリットの効果2009
- Author(s)
  田渕雅夫, 竹田美和, 他
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Influence of Growth Rate and Temperature on InP/GaInAs Interface Structure Analyzed by X-ray CTR Scattering Measurement2009
- Author(s)
  H. Tameoka, A. Mori, M. Tabuchi and Y. Takeda
- Organizer
  2009 Indium Posphide and Related Materials (IPRM2009)
- Place of Presentation
  Beach, CA, USA
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] 半導体における埋もれた界面の重要性とその測定・解析法2009
- Author(s)
  竹田美和, 田渕雅夫
- Organizer
  第56回応用物理学会関係連合講演会, X線・中性子による埋もれた界面研究の最前線
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] ヨハンソン分光結晶を用いたX線CTR散乱測定装置の開発2009
- Author(s)
  田渕雅夫, 竹田美和, 他
- Organizer
  埋もれた界面のX線・中性子回折に関するワークショップ
- Place of Presentation
  筑波大学東京キャンパス
- Year and Date
  2009-07-01
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 結晶成長その場観察を目指した新しいX線CTR散乱測定装置の開発2009
- Author(s)
  田渕雅夫, 竹田美和, 他
- Organizer
  応用物理学会結晶工学分科会
- Place of Presentation
  学習院大学
- Year and Date
  2009-12-11
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 半導体における埋もれた界面の重要性とその測定・解析法2009
- Author(s)
  竹田美和, 田渕雅夫
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement2009
- Author(s)
  H. Tameoka, A. Mori, M. Tabuchi, and Y. Takeda
- Organizer
  2009 Indium Phosphide and Related Materials(IPRM2009)
- Place of Presentation
  MA2. 4, Newport Beach, CA, USA
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] InP/GaInAs/IhPヘテロ構造におけるAs原子蓄積過程の検討2009
- Author(s)
  田渕雅夫, 竹田美和, 他
- Organizer
  埋もれた界面のX線・中性子回折に関するワークショップ
- Place of Presentation
  筑波大学東京キャンパス
- Year and Date
  2009-07-13
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] InP/GalnAs/InPヘテロ界面におけるAs原子吸着効果の温度依存性のX線CTR散乱法による解析2009
- Author(s)
  森晶子, 為岡博, 藤井克典, 川瀬達也, 田渕雅夫, 竹田美和
- Organizer
  第22回日本放射光学会年会・放射光科学合同シンポジウム
- Place of Presentation
  東京大学本郷キャンパス
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement2009
- Author(s)
  H. Tameoka, A. Mori, M. Tabuchi and Y. Takeda
- Organizer
  2009 Indium Phosphide and Related Materials (IPRM2009)
- Place of Presentation
  MA2.4, Newport Beach, CA, USA
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Influence of Growth Rate and Temperature on InP/GaInAs Interface Structure Analyzed by X-ray CTR Scattering Measurement2009
- Author(s)
  田渕雅夫, 竹田美和, 他
- Organizer
  2009 Indium Posphide and Related Materials
- Place of Presentation
  Newport Beach, CA, 米
- Year and Date
  2009-05-11
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 半導体における埋もれた界面の重要性とその測定・解析法2009
- Author(s)
  竹田美和, 田渕雅夫
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] 半導体における埋もれた界面の重要性とその測定・解析法(invited)2009
- Author(s)
  竹田美和, 田渕雅夫
- Organizer
  第56回応用物理学会関係連合講演会, 「X線・中性子による埋もれた界面研究の最前線」
- Place of Presentation
  筑波大学(31a-D-3)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] ヨハンソン分光結晶を用いた実験室系X線CTR散乱測定装置の開発2009
- Author(s)
  為岡博, 川瀬達也, 田渕雅夫, 竹田美和
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] InP/GaInAs/InPヘテロ界面におけるAs原子吸着効果の温度依存性のX線CTR散乱法による解析2009
- Author(s)
  森晶子, 為岡博, 藤井克典, 川瀬達也, 田渕雅夫, 竹田美和
- Organizer
  第22回日本放射光学会年会・放射光科学合同シンポジウム
- Place of Presentation
  東京大学本郷キャンパス
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] ヨハンソン分光結晶を用いた実験室系X線CTR散乱測定装置の開発2009
- Author(s)
  為岡博, 川瀬達也, 田渕雅夫, 竹田美和
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] ヨハンソン分光結晶を用いた実験室系X線CTR散乱測定装置の開発2009
- Author(s)
  為岡博, 川瀬達也, 田渕雅夫, 竹田美和
- Organizer
  第56回応用物理学会関係連合講演会.
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定2008
- Author(s)
  水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  第27回電子材料シンポジウム(EMS27)
- Place of Presentation
  ラフォーレ修善寺
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds2008
- Author(s)
  Y. Takeda, T. Mizuno, H. Kamiya, M. Tabuchi
- Organizer
  8th Akasaki Research Center Symp.
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2008-11-20
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds2008
- Author(s)
  Y. Takeda, T. Mizuno, H. Kamiya, and M. Tabuchi
- Organizer
  8th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2008-11-20
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds (invited)2008
- Author(s)
  Y. Takeda, T. Mizuno, H. Kamiya and M. Tabuchi
- Organizer
  8th Akasaki Research Center Symp.
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2008-11-20
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 成長温度と成長速度がInP/GaInAs 界面に及ぼす影響のX 線CTR 散乱法による解析2008
- Author(s)
  為岡博, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  応用物理学会結晶工学分科会主催 2008年年末講演会
- Place of Presentation
  学習院大学
- Year and Date
  2008-12-11
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] 成長温度と成長速度がInP/GaInAs界面に及ぼす影響のX線CTR散乱法による解析2008
- Author(s)
  為岡博, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] 成長温度と成長速度がInP/GalnAs界面に及ぼす影響のX線CTR散乱法による解析2008
- Author(s)
  為岡博, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature effects2008
- Author(s)
  A. Mori, H. Tameoka, M. Tabuchi, Y. Takeda
- Organizer
  2008 Indium Phosphide and Related Materials(IPRM2008)
- Place of Presentation
  Versailles, France
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定(EMS賞受賞)2008
- Author(s)
  水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  第27回電子材料シンポジウム(EMS27)
- Place of Presentation
  ラフォーレ修善寺(K-15)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 成長温度と成長遠度がInP/GalnAs界面に及ぼす影響のX線CTR散乱法による解析2008
- Author(s)
  為岡博, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定2008
- Author(s)
  水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  第27回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] InP/GalnAs界面におけるAs原子吸着効果の温度依存性-X線CTR散乱法による解析-2008
- Author(s)
  森晶子, 為岡博, 川瀬達也, 藤井克憲, 田渕雅夫, 竹田美和
- Organizer
  応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  学習院大学
- Year and Date
  2008-12-11
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature Effects2008
- Author(s)
  A. Mori, H. Tameoka, M. Tabuchi, and Y. Takeda
- Organizer
  2008 Indium Phosphide and Related Materials 2008(IPRM2008)
- Place of Presentation
  WeP6, Versailles, France
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] InP/GaInAs界面におけるAs 原子吸着効果の温度依存性-X線CTR散乱法による解析-2008
- Author(s)
  森晶子, 為岡博, 川瀬達也, 藤井克憲, 田渕雅夫, 竹田美和
- Organizer
  応用物理学会結晶工学分科会主催 2008年年末講演会
- Place of Presentation
  学習院大学
- Year and Date
  2008-12-11
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] X-ray CTR scattering analysis of as accumulation on GaInAs surface and growth temperature effects2008
- Author(s)
  A. Mori, H. Tameoka, M. Tabuchi, Y. Takeda
- Organizer
  Indium Posphide and Related Materials 2008 (IPRM2008)
- Place of Presentation
  Versailles, France
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] 成長温度と成長速度がInP/GalnAs界面に及ぼす影響のX線CTR散乱法による解析2008
- Author(s)
  為岡博, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  応用物理学会結晶工学分科会年末講演会
- Place of Presentation
  学習院大学
- Year and Date
  2008-12-11
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 異なる成長温度での InP/GaInAs界面 As 原子分布に対する成長中断の影響2008
- Author(s)
  森晶子、為岡博、田渕雅夫、竹田美和
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE2007
- Author(s)
  M. Tabuchi
- Organizer
  The 15th International Conference on Crystal Growth
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] 窒化物半導体の埋もれたヘテロ構造2007
- Author(s)
  竹田美和, 田渕雅夫
- Organizer
  第18回日本MRS学術シンポジウム
- Place of Presentation
  日本大学理工学部駿河台校舎
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] X-ray CTR scattering measurements to reveal the effect of the growth interruption processes on the InP/InGaAs interface structures2007
- Author(s)
  M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
- Organizer
  The 15th International Conference on CrystalGrowth, o07
- Place of Presentation
  Salt Lake City, USA
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 実験室系のX線源を用いたX線CTR散乱測定による半導体へテロ界面の評価2007
- Author(s)
  前田義紀, 水野哲也, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  第37回結晶成長国内会議(NCCG-37)
- Place of Presentation
  北海道大学(06aC09)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Development of in-situ X-ray non-invasive characterization system on GaN and related compounds2007
- Author(s)
  Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
- Organizer
  7th Akasaki Research Center Symposium-To the New Horizon of the Nitride Research-
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2007-10-19
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE2007
- Author(s)
  M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
- Organizer
  The 15th International Conference on Crystal Growth, o06
- Place of Presentation
  Salt Lake City, USA
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X線CTR散乱法で解析するInP/GaInAs界面形成過程2007
- Author(s)
  田渕雅夫
- Organizer
  埋もれた界面のX線・中性子解析に関するワークショップ2007
- Place of Presentation
  東北大学金属材料研究所
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] InP/GaInAs界面における原子の分布広がり発生メカニズム2007
- Author(s)
  森晶子, 大竹悠介, 田渕雅夫, 竹田美和
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工大
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007
- Author(s)
  A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
- Organizer
  The 19th International Conference on Indium Phosphide and Related Materials, PB29
- Place of Presentation
  Matsue, Japann
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE2007
- Author(s)
  M. Tabuchi, Y. Ohtake, A. Mori and Y. Takeda
- Organizer
  The 15th International Conference on Crystal Growth (ICCG15)
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] InP/GaInAs界面における原子の分布広がり発生メカニズム2007
- Author(s)
  森晶子、大竹悠介、田渕雅夫、竹田美和
- Organizer
  第68回応用物理学会学術講演会8a-H-3
- Place of Presentation
  北海道工大
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 実験室系のX線回折装置による半導体へテロ界面のX線CTR散乱測定2007
- Author(s)
  前田義紀, 水野哲也, 森晶子, 竹田美和, 田渕雅夫
- Organizer
  第18回日本MRS学術シンポジウム
- Place of Presentation
  日本大学理工学部駿河台校舎(G-P04-M)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 窒化物半導体の埋もれたヘテロ構造(invited)2007
- Author(s)
  竹田美和, 田渕雅夫
- Organizer
  第18回日本M R S 学術シンポジウム
- Place of Presentation
  日本大学理工学部駿河台校舎(G-06-I)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X-ray CTR scattering measurements to reveal the effect of the growth interruption processes on the InP/InGaAs interface structures2007
- Author(s)
  M. Tabuchi
- Organizer
  The 15th International Conference on Crystal Growth
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] Development of in-situ X-ray non-invasive characterization system on GaN and related compounds (invited)2007
- Author(s)
  Y. Takeda, Y. Maeda, T. Mizuno and M. Tabuchi
- Organizer
  7th Akasaki Research Center Symp.
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2007-10-09
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 実験室系のX線源を用いたX線CTR散乱測定による半導体ヘテロ界面の評価2007
- Author(s)
  前田義紀, 水野哲也, 森晶子, 田渕雅夫, 竹田美和
- Organizer
  第37回結晶成長国内会議(NCCG-37), 06aC09
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE2007
- Author(s)
  M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
- Organizer
  The 15th International Conference on Crystal Growth(ICCG15)
- Place of Presentation
  o06, Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X-ray CTR scattering measurements to reveal the effect of the growth interruption processes on the InP/InGaAs interface structures2007
- Author(s)
  M. Tabuchi, Y. Ohtake, A. Mori and Y. Takeda
- Organizer
  The 15th International Conference on Crystal Growth (ICCG15)
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PROJECT-19360006
[Presentation] 埋め込まれたInAsナノドットのGI-SAXSを用いた構造解析2007
- Author(s)
  久野啓志、大高幹雄、中野聡志、奥田浩司、落合庄治郎、則竹陽介、鈴木裕史、竹田美和、田渕雅夫
- Organizer
  第18回日本MRS学術シンポジウム、G-P05-M
- Place of Presentation
  日本大学理工学部駿河台校舎
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 異なる成長温度でのInP/Ga_<0.47>In_<0.53>As界面As原子分布に対する成長中断の影響2007
- Author(s)
  森晶子、為岡博、田渕雅夫、竹田美和
- Organizer
  第55回応用物理学会関係連合講演会、29aZT-5
- Place of Presentation
  日本大学理工学部船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 実験室系のX線回折装置による半導体ヘテロ界面のX線CTR散乱測定2007
- Author(s)
  前田義紀、水野哲也、森晶子、竹田美和、田渕雅夫
- Organizer
  第18回日本MRS学術シンポジウム、G-P04-M
- Place of Presentation
  日本大学理工学部駿河台校舎
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X線CTR散乱法で解析するInP/GaInAs界面形成過程2007
- Author(s)
  田渕雅夫
- Organizer
  埋もれた界面のX線・中性子回折に関するワークショップ2007
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] 窒化物半導体の埋もれたヘテロ構造2007
- Author(s)
  竹田美和、田渕雅夫
- Organizer
  第18回日本MRS学術シンポジウム、G-06-I(Invited)
- Place of Presentation
  日本大学理工学部駿河台校舎
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007
- Author(s)
  A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
- Organizer
  2007 Indium Phosphide and Related Materials 2007(IPRM2007)
- Place of Presentation
  PB29, Kunibiki Messe, Matsue, Japan
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X線CTR散乱法によるGaInN/GaN量子井戸構造中のIn組成分布の解析2006
- Author(s)
  大竹悠介, 田渕雅夫, 竹見政義, 岡川広明, 竹田美和
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学(30p-C-9)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] X 線C T R 散乱測定によるGaInN/GaN多層構造中のIn原子分布の解析2006
- Author(s)
  田渕雅夫, 大竹悠介, 竹田美和
- Organizer
  第17回日本M R S 学術シンポジウム
- Place of Presentation
  日本大学理工学部駿河台校舎(G-P02)
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering (invited)2006
- Author(s)
  M. Tabuchi and Y. Takeda
- Organizer
  6th Akasaki Research Center Symp.
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2006-12-05
- Data Source
  KAKENHI-PROJECT-18106001
[Presentation] Growth of BaFe2(As,P)2 Thin Films by Molecular Beam Epitaxy
- Author(s)
  H. Ikuta, Y. Mori, A. Sakagami, T. Kawaguchi, M. Tabuchi, and T. Ujihara
- Organizer
  11th European Conference on Applied Superconductivity (EUCAS2013)
- Place of Presentation
  Genova, Italy
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] BaFe2(As,P)2薄膜のMBE成長と接合作製
- Author(s)
  森康博，坂上彰啓，川口昂彦，田渕雅夫，宇治原徹，生田博志
- Organizer
  2013年春季第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] IBAD-MgO/金属テープ上へのBaFe2(As,P)2薄膜のMBE成長と評価
- Author(s)
  森康博, F. Kurth, 藤本亮祐, 川口昂彦, J. Hänisch, B. Holzapfel, K. Iida, C. Tarantini, 田渕雅夫, 宇治原徹, 生田博志
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] MBE Growth of Iron-based Superconductor Thin Films and Junction Fabrication
- Author(s)
  H. Ikuta, T. Kawaguchi, H. Uemura, T. Ohno, A. Sakagami, M. Tabuchi, T. Ujihara, Y. Takeda
- Organizer
  11th International Symposium on High Temperature Superconductors in High Frequency Fields (HTSHFF2012)
- Place of Presentation
  松島
- Invited
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] Fe過剰BaFe2(As,P)2薄膜の臨界電流密度増大の起源
- Author(s)
  森康博, 藤本亮祐, 坂上彰啓, 原田俊太, 宇治原徹, 田渕雅夫, 生田博志
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] Strain effect on the superconducting properties of BaFe2(As,P)2 thin films
- Author(s)
  Y. Mori, R. Fujimoto, A. Sakagami, T. Kawaguchi, M. Tabuchi, T. Ujihara, H. Ikuta
- Organizer
  26th International Symposium on Superconductivity (ISS2013)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] NdFeAs(O,F)薄膜を用いた超伝導接合の作製
- Author(s)
  川口昂彦，角谷直紀，田渕雅夫，宇治原徹，竹田美和，生田博志
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] 鉄系超伝導体薄膜の粒界接合特性
- Author(s)
  川口昂彦，坂上彰啓，森康博，角谷直紀，田渕雅夫，宇治原徹，竹田美和，生田博志
- Organizer
  日本物理学会2012年秋季大会
- Place of Presentation
  横浜国立大学
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] BaFe2(As,P)2の超伝導特性の歪効果
- Author(s)
  川口昂彦，坂上彰啓，森康博，田渕雅夫，宇治原徹，生田博志
- Organizer
  日本物理学会第68回年次大会
- Place of Presentation
  広島大学
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] Growth of a smooth CaF2 layer on NdFeAsO thin film
- Author(s)
  N. Sumiya, M. Chihara, T. Kawaguchi, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada, and H. Ikuta
- Organizer
  11th European Conference on Applied Superconductivity (EUCAS2013)
- Place of Presentation
  Genova, Italy
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] BaFe2(As,P)2超伝導薄膜のMBE成長と粒界特性の評価
- Author(s)
  森　康博，坂上彰啓，川口昂彦，田渕雅夫，宇治原徹，竹田美和，生田博志
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] NdFeAs(O,F)薄膜上のCaF2層の成長及び接合作製
- Author(s)
  角谷直紀，川口昂彦，田渕雅夫，宇治原徹，生田博志
- Organizer
  2013年春季第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] 可視光およびX線を用いた窒化物半導体結晶成長原子レベルその場観察
- Author(s)
  鞠光旭, 渕真悟, 田渕雅夫, 竹田美和, 本田善央, 山口雅史, 天野浩
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-23360009
[Presentation] Jc and Grain Boundary Properties of BaFe2(As,P)2 Thin Films
- Author(s)
  A. Sakagami, T. Kawaguchi, Y. Mori, M. Tabuchi, T. Ujihara, and H. Ikuta
- Organizer
  25th International Symposium on Superconductivity (ISS2012)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] 鉄系超伝導体NdFeAsO薄膜上への平坦なCaF2層成長
- Author(s)
  角谷直紀，千原真志，川口昂彦，田渕雅夫,宇治原徹，一瀬中，塚田一郎，生田博志
- Organizer
  応用物理学会SC東海地区学術講演会2013
- Place of Presentation
  名古屋大学東山キャンパス
- Data Source
  KAKENHI-PROJECT-24246007
[Presentation] Growth of a smooth insulator layer on NdFeAsO and junction fabrication
- Author(s)
  N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A. Ichinose, I. Tsukada, and H. Ikuta
- Organizer
  26th International Symposium on Superconductivity (ISS2013)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-24246007

1. TAKEDA Yoshikazu (20111932)

# of Collaborated Projects: 21 results

# of Collaborated Products: 152 results
2. FIJIWARA Yasufumi (10181421)

# of Collaborated Projects: 14 results

# of Collaborated Products: 0 results
3. NONOGAKI Yoichiro (40300719)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
4. UJIHARA Toru (60312641)

# of Collaborated Projects: 5 results

# of Collaborated Products: 3 results
5. OYANAGI Hiroyuki

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
6. OFUCHI Hironori (40312996)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
7. FUCHI Shingo (60432241)

# of Collaborated Projects: 3 results

# of Collaborated Products: 70 results
8. JIN Xiugaung (20594055)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. OKUDA Hiroshi (50214060)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
10. HIROSHI Ikuta (30231129)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
11. TANAKA Yukio (40212039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. NAKAMURA Arao (50159068)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. YOSHIDA Hiroshi (30133929)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. Nishitani Tomohiro (40391320)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
15. 原田俊太 (30612460)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 目黒多加志 (20182149)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 成田哲博 (30360613)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 本田善央 (60362274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
20. 石川史太郎 (60456994)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
21. 市川修平 (50803673)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 保田英洋 (60210259)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 七井靖 (80755166)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 花田賢志 (30637319)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 有元圭介 (30345699)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. TATSUTA Toshiaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. HARADA Jimpei

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. TAKAHEI Ken-ichiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 澤井巳喜夫

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 町田英明

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Tabuchi Masao 田渕 雅夫

TABUCHI Masao 田渕 雅夫

田淵 雅夫 タブチ マサオ

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Development of X-ray diffractomator to realize in-situ observation of crystal growthPrincipal Investigator

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Development of X-ray scattering measurement system for in-situ observations of semiconductor crystalline growthPrincipal Investigator

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Analysis of semiconductor multi-layer structure by X-ray CTR scattering measurementPrincipal Investigator

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Distributions of impurity atoms in semiconductors analyzed by X-ray CTR scattering measurementPrincipal Investigator

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Tabuchi Masao 田渕雅夫

TABUCHI Masao 田渕雅夫

田淵雅夫タブチマサオ