Kobayashi Daisuke 小林大輔

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KOBAYASHI Daisuke 小林大輔

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Researcher Number	90415894
Other IDs
Affiliation (Current)	2025: 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 准教授
Affiliation (based on the past Project Information) *help	2020 – 2024: 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 准教授 2016: 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 助教 2011 – 2014: 独立行政法人宇宙航空研究開発機構, 宇宙科学研究所, 助教 2007 – 2009: Japan Aerospace Exploration Agency, Institute of Space and Astronautical Science, Assistant Professor 2006: 独立行政法人宇宙航空研究開発機構, 宇宙科学研究本部, 助手
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Thin film/Surface and interfacial physical properties / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 放射線 / ソフトエラー / 量子ビーム産業応用 / 機器・人間の信頼性 / 品質管理 / SET / シングルイベント効果 / 電子デバイス・機器 / 低酸素社会 / 電子デバイス・集積回路 … More / リスク評価 / 低炭素社会 / SETs / Combinational Circuits / VLSIs / Radiation / Design for Testability / Scan Designs / Single-Event Effects / Soft Errors / 論理回路 / VLSI / テスト容易化設計 / スキャン設計 / 熱 / 信頼性 / シングルイベントトランジェント / ディペンダブルコンピューティング / 解析式 / 放射線,X線,粒子線 / モデリング / 宇宙線 / 放射線・X線・粒子線 / 半導体物性 … More Except Principal Investigator 光電子分光 / 界面 / シリコン酸化膜 / 第一原理計算 / 表面 / シリコン / 誘電率 / 欠陥準位 / アモルファス / MOSFET / defect / XANES / XPS / amorphous / interface / SiO2 / 第一原理計 / 酸化膜S / 薄膜 / 酸化膜 Less

放射線を当てずに放射線ソフトエラー信頼性を評価する技術Principal Investigator
- Principal Investigator
  
  小林大輔
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Japan Aerospace EXploration Agency
Soft-Error Screening for Low-Cost High-Reliability LSI DevelopmentPrincipal Investigator
- Principal Investigator
  
  Kobayashi Daisuke
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Japan Aerospace EXploration Agency
XPS Study on ultra thin SiO2 film formed on Si substrates with several surface orientations
- Principal Investigator
  
  Hirose Kazuyuki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Japan Aerospace EXploration Agency
Radiation-induced increase in local temperature and its effects on soft error tolerancePrincipal Investigator
- Principal Investigator
  
  KOBAYASHI Daisuke
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Japan Aerospace Exploration Agency
Study on dielectric constant of ultrathin SiO2 by using XPS and first-principles calculation
- Principal Investigator
  
  HIROSE Kazuyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Japan Aerospace Exploration Agency
Experimental waveform study of SET pulses leading to soft errors in logic LSIPrincipal Investigator
- Principal Investigator
  
  KOBAYASHI Daisuke
- Project Period (FY)
  2008 – 2009
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Japan Aerospace Exploration Agency
Study on dielectric constant of ultrathin films in gate structures
- Principal Investigator
  
  HIROSE Kazuyuki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Japan Aerospace Exploration Agency
LSI Test Technology for Evaluating Soft-Error-Rates in Combinational Logic CircuitsPrincipal Investigator
- Principal Investigator
  
  KOBAYASHI Daisuke
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Japan Aerospace Exploration Agency

All 2023 2022 2021 2017 2016 2015 2012 2011 2010 2009 2008 2007 2006 Other

All Journal Article Presentation Book

[Book] X線光電子分光による誘電率の推定法2016
- Author(s)
  廣瀬和之, 小林大輔
- Total Pages
  6
- Publisher
  技術情報協会
- Data Source
  KAKENHI-PROJECT-26390072
[Journal Article] Threshold and Characteristic LETs in SRAM SEU Cross Section Curves2023
- Author(s)
  Daisuke Kobayashi, Masashi Uematsu, Kazuyuki Hirose
- Journal Title
  
  IEEE Transactions on Nuclear Science
  
  Volume: 70 Issue: 4 Pages: 707-713
- DOI
  10.1109/tns.2023.3244181
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02217
[Journal Article] Exploring magic equations for soft error reliability2023
- Author(s)
  小林大輔、廣瀬和之
- Journal Title
  
  Oyo Buturi
  
  Volume: 92 Issue: 2 Pages: 89-93
- DOI
  10.11470/oubutsu.92.2_89
- ISSN
  0369-8009, 2188-2290
- Year and Date
  2023-02-01
- Language
  Japanese
- Data Source
  KAKENHI-PROJECT-20H02217
[Journal Article] Exploring magic equations for soft-error reliability2023
- Author(s)
  Daisuke Kobayashi, Kazuyuki Hirose
- Journal Title
  
  JSAP Review
  
  Volume: 2023 Issue: 0 Pages: n/a
- DOI
  10.11470/jsaprev.230423
- ISSN
  2437-0061
- Language
  English
- Open Access
- Data Source
  KAKENHI-PROJECT-23K26172
[Journal Article] ITサステナビリティに与える宇宙の影響2023
- Author(s)
  小林大輔
- Journal Title
  
  科学
  
  Volume: 93
- Data Source
  KAKENHI-PROJECT-23K26172
[Journal Article] An SRAM SEU cross section curve physics model2022
- Author(s)
  D. Kobayashi, K. Hirose, K. Sakamoto, Y. Tsuchiya, S. Okamoto, S. Baba, H. Shindou, O. Kawasaki, T. Makino, and T. Ohshima
- Journal Title
  
  IEEE Transactions on Nuclear Science
  
  Volume: 69 Issue: 3 Pages: 232-240
- DOI
  10.1109/tns.2021.3129185
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02217
[Journal Article] Scaling Trends of Digital Single-Event Effects: A Survey of SEU and SET Parameters and Comparison With Transistor Performance2021
- Author(s)
  D. Kobayashi
- Journal Title
  
  IEEE Transactions on Nuclear Science
  
  Volume: 68 Issue: 2 Pages: 124-148
- DOI
  10.1109/tns.2020.3044659
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02217
[Journal Article] Time-Domain Study on Reproducibility of Laser-Based Soft-Error Simulation2017
- Author(s)
  H. Itsuji, D. Kobayashi, N.E. Lourenco, and K. Hirose
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56
- NAID
  210000147576
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390072
[Journal Article] Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique2011
- Author(s)
  H. Seki, Y. Shibuya, D. Kobayashi, H. Nohira, K. Yasuoka, and K. Hirose
- Journal Title
  
  Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials
  
  Pages: 20-21
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理分子軌道計算を用いたSi(Al)化合物の局所的な絶縁破壊電界の推定法2011
- Author(s)
  関洋, 渋谷寧浩, 野平博司, 小林大輔, 泰岡顕治, 廣瀬和之
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理
  
  Volume: 16 Pages: 127-130
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理分子軌道計算を用いた欠陥を持つSiO_2の絶縁破壊電界の推定2011
- Author(s)
  関洋,渋谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Journal Title
  
  第17回ゲートスタック研究会-材料・プロセス・評価の物理-
  
  Pages: 77-80
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique2011
- Author(s)
  H. Seki, Y. Shibuya, D. Kobayashi, H. Nohira, K. Yasuoka, and K. Hirose
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51(4)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  渋谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理
  
  Volume: 16 Pages: 131-134
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理計算を用いたSiO_2多形の静的誘電率推定2011
- Author(s)
  渋谷寧浩,小林大輔,野平博司,廣瀬和之
- Journal Title
  
  第17回ゲートスタック研究会-材料・プロセス・評価の物理-
  
  Pages: 157-160
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理計算を用いた絶縁膜の誘電率推定2010
- Author(s)
  五十嵐智,小林大輔,野平博司,廣瀬和之
- Journal Title
  
  第15回ゲートスタック研究会-材料・プロセス・評価の物理-
  
  Pages: 193-196
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] 第一原理計算を用いた絶縁膜の誘電率推定2010
- Author(s)
  五十嵐智, 小林大輔, 野平博司, 廣瀬和之
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理- 15
  
  Pages: 175-178
- Data Source
  KAKENHI-PROJECT-21360025
[Journal Article] Device-physics-based analytical model for single event transients in SOI CMOS logics2009
- Author(s)
  D.Kobayashi, et al.
- Journal Title
  
  IEEE Transactions on Nuclear Science 56
  
  Pages: 3043-3049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760228
[Journal Article] 第一原理計算を用いた絶縁膜の誘電率推定2009
- Author(s)
  五十嵐智、小林大輔、野平博司、廣瀬和之
- Journal Title
  
  ゲートスタック研究会-材料・プロセス・評価の物理- 第14回
  
  Pages: 175-178
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Device-physics-based analytical model for single event transients in SOI CMOS logics2009
- Author(s)
  D. Kobayashi, K. Hirose, V. Ferlet-Cavrois, D. McMorrow, T. Makino, H. Ikeda, Y. Arai, M. Ohno
- Journal Title
  
  IEEE Transactions on Nuclear Science vol.56,no.6
  
  Pages: 3043-3049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760228
[Journal Article] Waveform observation of digital single-event transients employing monitoring transistor technique2008
- Author(s)
  D. Kobayashi, K. Hirose, Y. Yanagawa, H. Ikeda, H. Saito, V. Ferlet-Cavrois, D. McMorrow, M. Gaillardin, P. Paillet, Y. Arai, M. Ohno
- Journal Title
  
  IEEE Transactions on Nuclear Science vol.55,no.6
  
  Pages: 2872-2879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760228
[Journal Article] Waveform observation of digital single-event transients employing monitoring transistor technique2008
- Author(s)
  D.Kobayashi et al.
- Journal Title
  
  IEEE Transactions on Nuclear Science 55
  
  Pages: 2872-2879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20760228
[Journal Article] Correlation between the dipole moment induced at the Slater transition state and the optical dielectric constant of Si and Al compounds2008
- Author(s)
  K. Hirose, D. Kobayashi, H. Suzuki, H. Nohira
- Journal Title
  
  Applied Physics Letters Vol. 93
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds2008
- Author(s)
  K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Journal Title
  
  Journal of Physics : Conference Series Vol. 100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2007
- Author(s)
  D. Kobayashi, et. al.
- Journal Title
  
  IEEE Transactions on Nuclear Science vol.54, no.4
  
  Pages: 1037-1041
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET2007
- Author(s)
  D. Kobayashi, et. al.
- Journal Title
  
  IEEE Transactions on Nuclear Science vol.54, no.6
  
  Pages: 2347-2354
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] Estimation of single event transient voltage pluses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2007
- Author(s)
  D.Kobayashi et al.
- Journal Title
  
  Proc. 2006 Radiation aeffects on Components and Systemes (RADECS) Workshop (印刷中)
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] Estimation of single event transient voltage pulses in VLST circuits from heavy-ion-induced transients measured in a single MOSFET2007
- Author(s)
  D.Kobayashi et al.
- Journal Title
  
  IEEF Transactions on Nuclear Science 54(4)(印刷中)
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2007
- Author(s)
  D.Kobayashi, et. al.
- Journal Title
  
  IEEE Transactions on Nuclear Science 54
  
  Pages: 1037-1041
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET2007
- Author(s)
  D.Kobayashi, et. al.
- Journal Title
  
  IEEE Transactions on Nuclear Science 54
  
  Pages: 2347-2354
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] Estimation of single event transient voltage pulses in VLSI circuits fromheavy-ion・-induced transient currents measured in a single MOSFET2007
- Author(s)
  D.Kobayashi, et. al.
- Journal Title
  
  IEEE Transactions on Nuclear Science 54
  
  Pages: 1037-1041
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] High-k gate dielectric films studied by extremely asymmetric x-ray diffraction and x-ray photoelectron spectroscopy2007
- Author(s)
  Y. Itoh, K. Akimoto, H. Yoshida, T. Emoto, D. Kobayashi, K. Hirose
- Journal Title
  
  Journal of Physics : Conference Series Vol. 83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006
- Author(s)
  D.Kobayashi et al.
- Journal Title
  
  IEEF Transactions on Nuclear Science 53(6)
  
  Pages: 3372-3378
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006
- Author(s)
  D. Kobayashi, et. al.
- Journal Title
  
  IEEE Transactions on Nuclear Science vol.53, no.6
  
  Pages: 3372-3378
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] Time-domain component analysis of heavy-ion-induced transient-currents in fully-depleted SOi MOSFETs2006
- Author(s)
  D.Kobayashi et al.
- Journal Title
  
  Proc. 7th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)
  
  Pages: 99-102
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interface2006
- Author(s)
  K. Hirose, H. Nohira, D. Kobayashi, T. Hattori
- Journal Title
  
  IEEE 2006 Int. Conf. Solid-State and Integrated Circuit Technology
  
  Pages: 368-371
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006
- Author(s)
  D.Kobayashi, et. al.
- Journal Title
  
  IEEE Transactions on Nuclear Science 53
  
  Pages: 3372-3378
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定2006
- Author(s)
  鈴木治彦、長谷川覚、野平博司、服部健雄、山脇師之、鈴木伸子、小林大輔、廣瀬和之
- Journal Title
  
  応用物理学会分科会シリコンテクノロジー No.82-2
  
  Pages: 55-60
- NAID
  110004757013
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] X-ray photoelectron spectroscopy study of dielectric constants for Si compounds2006
- Author(s)
  K. Hirose, M. Kihara, D. Kobayashi, H. Okamoto, S. Shinagawa, H. Nohira, E. Ikenaga, M. Higuchi, A. Teramoto, S. Sugawa, T. Ohmi, T. Hattori
- Journal Title
  
  Applied Physics letters Vol. 89
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Journal Article] 単体トランジスタで観測された重イオン誘起過渡電流に基づくシングルイベント過渡電圧パルスの波形推定2006
- Author(s)
  小林大輔他
- Journal Title
  
  第7回半導体の放射線照射効果研究会予稿集
  
  Pages: 45-48
- Data Source
  KAKENHI-PROJECT-18560359
[Journal Article] X-ray photoelectron spectroscopy study on dielectric properties of AlN/Al_2O_3 Films2006
- Author(s)
  K. Hirose, H. Suzuki, T. Matsuda, Y. Takenaga, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Journal Title
  
  2006 Int. Workshop on Dielectric Thin Films for Future ULSI Device-Science and Technology-
  
  Pages: 25-26
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] 宇宙ってどれくらい厳しいの? 宇宙と地上をつなぐ方程式~それはなぜ生まれたのか2023
- Author(s)
  小林大輔
- Organizer
  電気学会ナノエレクトロニクス機能化・応用技術調査専門委員会
- Invited
- Data Source
  KAKENHI-PROJECT-23K26172
[Presentation] How Harsh is Space? Equations That Connect Space and Ground VLSI2023
- Author(s)
  Daisuke Kobayashi, Kazuyuki Hirose
- Organizer
  2023 Symposium on VLSI Technology and Circuits
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26172
[Presentation] バンド間トンネリングのソフトエラー信頼性予測への応用可能性2023
- Author(s)
  加藤由高、小林大輔、廣瀬和之
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02217
[Presentation] 二光子吸収過程パルスレーザを用いた重イオン誘起ノイズパルスの入射位置依存性の再現2021
- Author(s)
  出口拓実，小林大輔，廣瀬和之
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02217
[Presentation] An SRAM SEU cross section curve physics model2021
- Author(s)
  D. Kobayashi, K. Hirose, K. Sakamoto, Y Tsuchiya, S. Okamoto, S. Baba, H. Shindou, O. Kawasaki, T. Makino, and T. Ohshima
- Organizer
  IEEE Nuclear and Space Radiation Effects Conference (NSREC)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02217
[Presentation] パルスレーザによる二光子吸収過程を利用した重イオン誘起SETパルス波形のエネルギー依存性の再現2021
- Author(s)
  唐木達矢, 小林大輔，廣瀬和之
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02217
[Presentation] 低照射線量率下のSiO2/Si界面準位生成量に与える膜中Si-H基量の影響2017
- Author(s)
  東口紳太郞, 牧野高紘, 大島武, 小林大輔, 廣瀬和之
- Organizer
  2017年第64回応用物理学会春期学術講演会
- Place of Presentation
  神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] X線照射によるSiO2表面帯電の自発的補償機構の解明に向けた試料電流測定2017
- Author(s)
  張江貴大, 小林大輔, 山本知之, 廣瀬和之
- Organizer
  2017年第64回応用物理学会春期学術講演会
- Place of Presentation
  神奈川県横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] 宇宙用半導体デバイス～日本に残すべき耐環境性技術～2017
- Author(s)
  廣瀬和之, 小林大輔
- Organizer
  電子デバイス界面テクノロジー研究会-材料・プロセス・デバイスの物理-（第22回研究会）
- Place of Presentation
  静岡県三島市
- Year and Date
  2017-01-20
- Invited
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] X 線照射による SiO2 表面帯電の自発的補償機構2016
- Author(s)
  張江貴大, 津吹優太, 岡田啓太郎, 小林大輔, 山本知之, 廣瀬和之
- Organizer
  2016年第77回応用物理学会秋期学術講演会
- Place of Presentation
  新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] 第一原理計算を用いた絶縁破壊電界の推定2016
- Author(s)
  山口記功, 小林大輔, 山本知之, 廣瀬和之
- Organizer
  第26回日本MRS年次大会
- Place of Presentation
  神奈川県横浜市
- Year and Date
  2016-12-19
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] 第一原理計算を用いた SiC 多形における回復率の検討2016
- Author(s)
  山口記功, 小林大輔, 山本知之, 廣瀬和之
- Organizer
  2016年第77回応用物理学会秋期学術講演会
- Place of Presentation
  新潟県新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] Evaluation of Dielectric Constant Deduced from Relaxation Energy at SiO2/Si interfaces2015
- Author(s)
  M. Moriya, Y. Amano, K. Umeda, D. Kobayashi, T. Yamamoto, H. Nohira, and K. Hirose
- Organizer
  2nd International Symposium on Computational Materials and Biological Sciences
- Place of Presentation
  名古屋大学
- Year and Date
  2015-09-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] Ｘ線光電子分光法におけるチャージアップの帯電補償に関する研究2015
- Author(s)
  津吹優太、小林大輔、廣瀬和之
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] 第一原理計算を用いたSiO_2多形の静的誘電率推定2012
- Author(s)
  渋谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  第17回ゲートスタック研究会-材料・プロセス・評価の物理
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いた欠陥を持つSiO_2の絶縁破壊電界の推定2012
- Author(s)
  関洋,渋谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Organizer
  第17回ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique2011
- Author(s)
  H. Seki, Y. Shibuya, D. Kobayashi, H. Nohira, K. Yasuoka, and K. Hirose
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSiO_2の局所構造を反映した絶縁破壊電界の推定2011
- Author(s)
  関洋,渋谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] XPS時間依存測定法によるSiO_2/Si界面の電荷トラップ密度の面方位依存性の評価2011
- Author(s)
  石原由梨,五十嵐智,小林大輔,野平博司,上野和良,廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  渋谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  渋谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理
- Place of Presentation
  東京都目黒区
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSiO_2多形の静的誘電率推定2011
- Author(s)
  渋谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] XPS時間依存測定法によるSiO_2/Si界面の電荷トラップ密度の面方位依存性の評価2011
- Author(s)
  石原由梨, 五十嵐智, 小林大輔, 野平博司, 上野和良, 廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  澁谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi(Al)化合物の局所絶縁破壊電解の推定2011
- Author(s)
  関洋, 澁谷寧浩, 小林大輔, 野平博司, 泰岡顕治, 廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川県厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi(Al)化合物の局所絶縁破壊電解の推定2011
- Author(s)
  関洋,澁谷寧浩,小林大輔,野平博司,泰岡顕治,廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi(Al)化合物の局所的な絶縁破壊電界の推定法2011
- Author(s)
  関洋,渋谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSi化合物の静的誘電率推定2011
- Author(s)
  澁谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  2011年春季第58回応用物理学関係連合講演会
- Place of Presentation
  厚木市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSiO_2/Si界面の誘電率推定2011
- Author(s)
  五十嵐智,小林大輔,野平博司,廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-第15回研究会
- Place of Presentation
  三島市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi(Al)化合物の局所的な絶縁破壊電界の推定法2011
- Author(s)
  関洋, 渋谷寧浩, 野平博司, 小林大輔, 泰岡顕治, 廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] XPS時間依存測定法によるSiO_2/Si界面の電荷トラップ密度の面方位依存性の評価2011
- Author(s)
  石原由梨,五十嵐智,小林大輔,野平博司,上野和良,廣瀬和之
- Organizer
  シリコンテクノロジー研究会
- Place of Presentation
  名古屋市
- Year and Date
  2011-07-04
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Estimation technique for optical dielectric constant of polymorphous SiO_2 through first-principles molecular orbital calculation2010
- Author(s)
  K.Hirose, D.Kobayashi, S.Igarashi, H.Nohira
- Organizer
  12th International Conference on Modern Materials and Technologies
- Place of Presentation
  Montecatini Terme, Italy
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSiO_2/Si界面の誘電率推定2010
- Author(s)
  五十嵐智, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-第15回研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi・Al化合物の絶縁破壊電界の推定2010
- Author(s)
  関洋,澁谷寧浩,野平博司,小林大輔,泰岡顕治,廣瀬和之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Estimation technique f or optical dielectric constant of polym orphous SiO_2 through first-principles mo lecular orbital calculation2010
- Author(s)
  K. Hirose, D. Kobayashi, S. Igarashi, and H. Nohira
- Organizer
  12th International Conference on Modern Materials and Technologies
- Place of Presentation
  Mon tecatini Terme
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] SiO_2/Si界面の誘電率のSi面方位依存性についての考察2010
- Author(s)
  五十嵐智,小林大輔,野平博司,廣瀬和之
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理分子軌道計算を用いたSi・Al化合物の絶縁破壊電界の推定2010
- Author(s)
  関洋, 澁谷寧浩, 野平博司, 小林大輔, 泰岡顕治, 廣瀬和之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎県長崎市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 格子分極起因の誘電率推定法についての考察2010
- Author(s)
  澁谷寧浩,小林大輔,野平博司,廣瀬和之
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 格子分極起因の誘電率推定法についての考察2010
- Author(s)
  澁谷寧浩, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2010年秋季第71画応用物理学会学術講演会
- Place of Presentation
  長崎県長崎市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Estimation technique f or optical dielectric constant of Si an d Al compounds2009
- Author(s)
  K. Hirose, S. Igarashi, D. Kobayashi, and H. Nohira
- Organizer
  11th International Conference on Electronic Spectroscopy & Structure(ICESS-11)
- Place of Presentation
  Nara
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] SOI CMOSテバイスで発生する放射線誘起パルスノイズSETの解析モデル2009
- Author(s)
  小林大輔, 廣瀬和之
- Organizer
  2009年秋季応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県富山市)
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] SOI CMOSデバイスで発生する放射線誘起パルスノイズSETの解析モデル2009
- Author(s)
  小林大輔, 他
- Organizer
  2009年秋季応用物理学会学術講演会
- Place of Presentation
  富山県富山市
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] Device-physics-based analytical model for single event transients in SOI CMOS logics2009
- Author(s)
  D. Kobayashi, K. Hirose, V. Ferlet-Cavrois, D. McMorrow, M. Gaillardin, T. Makino, H. Ikeda, Y. Arai, M. Ohno
- Organizer
  presented in 2009 IEEE Nuclear and Space Radiation Effects Conference (NSREC)
- Place of Presentation
  Quebec City, Quebec, Canada
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] Device-physics-based analytical model for single event transients in SOI CMOS logics2009
- Author(s)
  D.Kobayashi, et al.
- Organizer
  2000 IEEE Nuclear and Space Radiation Effeccts Conference (NSREC)
- Place of Presentation
  Quebec City, Quebec, Canada
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] Estimation technique for optical dielectric constant of Si and Al compounds2009
- Author(s)
  廣瀬和之, 五十嵐智, 小林大輔, 野平博司
- Organizer
  11th International Conference on Electronic Spectroscopy & Structure(ICESS-11)
- Place of Presentation
  Nara
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Analytical expression for temporal width characterization of radiation-induced pulse noises in SOI CMOS logic gates2009
- Author(s)
  D.Kobayashi, et al.
- Organizer
  2009 IEEE International Reliability Physics Symposium (IRPS)
- Place of Presentation
  Montreal, Canada
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] 第一原理計算を用いたSiO_2/Si界面の誘電率推定2009
- Author(s)
  五十嵐智,小林大輔,野平博司,廣瀬和之
- Organizer
  2009年秋期第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] 第一原理計算を用いたSiO_2多形間の誘電率の違いについての検討2009
- Author(s)
  五十嵐智、小林大輔、野平博司、廣瀬和之
- Organizer
  第55回応用物理学会関係連合講演会
- Place of Presentation
  つくば
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Analytical expression for temporal width characterization of radiation-induced pulse noises in SOI CMOS logic gates (審査済・発表決定)2009
- Author(s)
  D.Kobayashi et al.
- Organizer
  2009 IEEE International Reliability Physics Symposium (IRPS)
- Place of Presentation
  Montreal, Canada
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] Device-physics-based analytical model for single event transients in SOI CMOS logics (審査済・発表決定)2009
- Author(s)
  D.Kobayashi et al.
- Organizer
  2009 IEEE Nuclear and Space Radiation Effects Conference (NSREC)
- Place of Presentation
  Quebec, Canada
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] 第一原理計算を用いた絶縁膜の誘電率推定2009
- Author(s)
  五十嵐智、小林大輔、野平博司、廣瀬和之
- Organizer
  ゲートスタック研究会 -材料・プロセス・評価の物理- 第14回
- Place of Presentation
  三島
- Year and Date
  2009-01-13
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] 第一原理計算を用いたSiO_2/Si界面の誘電率推定2009
- Author(s)
  五十嵐智, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2009年秋期第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-21360025
[Presentation] Analytical expression for temporal width characterization of radiation-induced pulse noises in SOI CMOS logic gates2009
- Author(s)
  D. Kobayashi, T. Makino, K. Hirose
- Organizer
  in Proc. 2009 IEEE International Reliability Physics Symposium (IRPS)
- Place of Presentation
  Montreal, Canada
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] Relationship between the dipole moment induced in photoemission process and the optical dielectric constant2008
- Author(s)
  K. Hirose, D. Kobayashi, H. Suzuki, S. Igarashi, H. Nohira
- Organizer
  Dielectric Thin Films for Future ULSI Devices : Science and Technology
- Place of Presentation
  Ookayama
- Year and Date
  2008-11-05
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Waveform observation of digital single-event transients employing monitoring transistor technique2008
- Author(s)
  D.Kobayashi et al.
- Organizer
  2008 IEEE Nuclear and Space Radiation Effects Conference (NSREC)
- Place of Presentation
  Tucson, AZ, USA
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] Waveform observation of digital single-event transients employing monitoring transistor technique2008
- Author(s)
  D. Kobayashi, K. Hirose, Y. Yanagawa, H. Ikeda, H. Saito, V. Ferlet-Cavrois, P. Paillet, D. McMorrow, Y. Arai, M. Ohno
- Organizer
  presented in 2008 IEEE Nuclear and Space Radiation Effects Conference (NSREC)
- Place of Presentation
  Tucson, AZ
- Data Source
  KAKENHI-PROJECT-20760228
[Presentation] First-principles calculation of the Slater transition state for estimating optical dielectric constants of Si and Al dielectric compounds2008
- Author(s)
  K. Hirose, D. Kobayashi, H. Suzuki, S. Igarashi, H. Nohira
- Organizer
  Solid State Device and Materials
- Place of Presentation
  Tsukuba
- Year and Date
  2008-09-23
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] 第一原理計算を用いた絶縁膜の誘電率推定2008
- Author(s)
  五十嵐智、鈴木治彦、小林大輔、野平博司、廣瀬和之
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] First-principles calculation of the Slater transition state for estimating optical dielectric constants of Si and Al dielectric compounds2008
- Author(s)
  K. Hirose, H. Suzuki, D. Kobayashi, H. Nohira
- Organizer
  SiO_2 2008
- Place of Presentation
  Saint-Etienne
- Year and Date
  2008-06-30
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Fast and physically-accurate estimation of single event transient pulses from radiation-induced transient currents measured in a single MOSFET:a simulation-based case study in bulk CMOS logic circuits2007
- Author(s)
  D.Kobayashi, et. al.
- Organizer
  2007 IEEE Workshop on Silicon Errors in Logic-System Effects(SELSE3)
- Place of Presentation
  Austin,TX,USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] 論理回路の新しいソフトエラーモード『シングルイベント・トランジェント』をデバイスレベルで考える2007
- Author(s)
  小林大輔, 他
- Organizer
  2007年秋季第68回応用物理学会学術講演会内シンポジウム「先端LSIに与える放射線の影響"ソフトエラーとハードエラー"」
- Place of Presentation
  北海道工業大学(北海道札幌市)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] シングルイベント過渡パルスの高速・高精度な波形推定:1 原理2007
- Author(s)
  小林大輔, 他
- Organizer
  2007年春季第54回応用物理学関係連合講演会
- Place of Presentation
  青山学院大学(神奈川県相模原市)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Fast and physically-accurate estimation of single event transient pulses from radiation-hlduced transient currents measured in a single MOSFET:a simulation-based case study in bulk CMOS logic circuits2007
- Author(s)
  D.Kobayashi, et. al.
- Organizer
  2007 IEEE Workshop on Silicon Errors in Logic-System Effects(SELSE3)
- Place of Presentation
  Austin, TX, USA
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Relationship between optical dielectric constant and XPS relative chemical shift of 1s and 2p levels for dielectric compounds2007
- Author(s)
  K. Hirose, H. Suzuki, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattroi
- Organizer
  13^<th> International Conference on Surface Science
- Place of Presentation
  Stockholm
- Year and Date
  2007-07-05
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Feasibility study of a table-based SET-pulse estimation in logic cells fromheavy-ion-induced transient currents measured in a single MOSFET2007
- Author(s)
  D.Kobayashi, et. al.
- Organizer
  2007 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
- Place of Presentation
  Honolulu, HI, USA
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET2007
- Author(s)
  D.Kobayashi, et. al.
- Organizer
  2007 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
- Place of Presentation
  Honolulu,HI,USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Feasibility study of a table-based SET-pulse estimation in logic cells from heavy-ion-induced transient currents measured in a single MOSFET2007
- Author(s)
  D. Kobayashi, et. al.
- Organizer
  2007 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
- Place of Presentation
  Honolulu, HI(paper H-6)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Fast and physically-accurate estimation of single event transient pulses from radiation-induced transient currents measured in a single MOSFET: a simulation-based case study in bulk CMOS logic circuits2007
- Author(s)
  D. Kobayashi, et. al.
- Organizer
  2007 IEEE Workshop on Silicon Errors in Logic-Systems Effects(SELSE3)
- Place of Presentation
  Austin, TX
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] 完全空乏型SOI MOSFETにおけるシングルイベント過渡電流の時間領域成分解析2006
- Author(s)
  小林大輔, 他
- Organizer
  2006年秋季第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学(滋賀県草津市)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Al酸化物・窒化物における相対ケミカルシフトと誘電率の関係の検証2006
- Author(s)
  鈴木治彦、松田徹、野平博司、高田恭考、池永英司、小林大輔、小林啓介、服部健雄、廣瀬和之
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  草津
- Year and Date
  2006-08-30
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2006
- Author(s)
  D.Kobayashi, et. al.
- Organizer
  2006 European Workshop on Radiation Effects on Components and Systems(RADECS)
- Place of Presentation
  Athens,Greece
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Time-domain component-analysis of heavy-ion-induced transient-currents in fully-depleted SOI MOSFETs2006
- Author(s)
  D. Kobayashi, et. al.
- Organizer
  7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application(RASEDA)
- Place of Presentation
  Takasaki, Japan(pp.99-102)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Time-domain component-analysis of heavy-ion-induced transient-currents in FD-SOI MOSFETs2006
- Author(s)
  D. Kobayashi, et. al.
- Organizer
  2006 IEEE Nuclear and Space Radiation Effects Conference(NSREC) , FL, late news paper PC-14L
- Place of Presentation
  Ponte Vedra Beach(late news paper PC-14L)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006
- Author(s)
  D.Kobayashi, et. al.
- Organizer
  2006 IEEE Nuclear and Space Radiation Effects Conference(NSREC)
- Place of Presentation
  Ponte Vedra Beach,FL,USA
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETs2006
- Author(s)
  D.Kobayashi, et. al.
- Organizer
  7th Int.Workshop on Radiation Effects on Semiconductor Devices for Space Applications(RASEDA)
- Place of Presentation
  Takasaki,Japan
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] 宇宙用SOI半導体部品の処理能力向上のための放射線誘起過渡現象の研究2006
- Author(s)
  小林大輔, 他
- Organizer
  第7回宇宙科学シンポジウム
- Place of Presentation
  宇宙科学研究本部(神奈川県相模原市)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] 極端に非対称なX線解析法とX線光電子分光法による高誘電率絶縁膜の研究2006
- Author(s)
  伊藤勇希、秋本晃一、吉田広徳、榎本貴志、廣瀬和之、小林大輔、生田目俊秀、鳥海明
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  草津
- Year and Date
  2006-08-30
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] Estimation of single event transient voltage pulses in VLSI circuits from heavy-ion-induced transient currents measured in a single MOSFET2006
- Author(s)
  D. Kobayashi, et. al.
- Organizer
  2006 European Workshop on Radiation Effect on Components and Systems(RADECS) , late news paper LN-6
- Place of Presentation
  Athens, Greece(late news paper LN-6)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] X-ray photoelectron spectroscopy study on dielectric properties of AlN/Al_2O_3 Films2006
- Author(s)
  K. Hirose, H. Suzuki, T. Matsuda, Y. Takenaga, H. Nohira, E. Ikenaga, D. Kobayashi, T. Hattori
- Organizer
  2006 Int. Workshop on Dielectric Thin Films for Future ULSI Device -Science and Technology-
- Place of Presentation
  Kawasaki
- Year and Date
  2006-11-08
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interface2006
- Author(s)
  K. Hirose, H. Nohira, D. Kobayashi, T. Hattori
- Organizer
  IEEE 2006 Int. Conf. Solid-State and Integrated Circuit Technology
- Place of Presentation
  Shanghai
- Year and Date
  2006-10-25
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] 単体トランジスタで観測された重イオン誘起過渡電流に基づくシングルイベント過渡電圧パルスの波形推定2006
- Author(s)
  小林大輔, 他
- Organizer
  第7回半導体の放射線照射効果研究会
- Place of Presentation
  日本大学(千葉県船橋市)
- Year and Date
  2006-12-09
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18560359
[Presentation] XPSを用いたAu/極薄SiO_2界面のバリアハイトの測定2006
- Author(s)
  鈴木治彦、長谷川覚、野平博司、服部健雄、山脇師之、鈴木伸子、小林大輔、廣瀬和之
- Organizer
  応用物理学会分科会シリコンテクノロジー研究会
- Place of Presentation
  広島
- Year and Date
  2006-06-22
- Data Source
  KAKENHI-PROJECT-18360026
[Presentation] XANESから推定したSiO2/Si界面の物性評価
- Author(s)
  森谷真帆, 小林大輔, 山本知之, 廣瀬和之
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] 放射線による局所昇温現象を考慮したソフトエラーシミュレーションの適用可能性
- Author(s)
  小林大輔, 伊藤大智, 廣瀬和之
- Organizer
  第 62 回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス(神奈川県平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24560435
[Presentation] Photoemission and molecular orbital calculation study on atomic structures and physical properties at (SiO2-Si)-interfaces
- Author(s)
  K. Hirose and D. Kobayashi
- Organizer
  18th Research Workshop on Nucleation Theory and Applications
- Place of Presentation
  Joinx Institute for Nuclear Research in Dubna, Russia
- Year and Date
  2014-04-12 – 2014-04-20
- Invited
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] 分子軌道法を用いて求めた回復率の検討
- Author(s)
  若尾周一郎, 小林大輔, 山本知之, 廣瀬和之
- Organizer
  2014年第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] 放射線による局所昇温現象を考慮したソフトエラーシミュレーション
- Author(s)
  小林大輔, 伊藤大智, 廣瀬和之
- Organizer
  第 75 回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス(北海道札幌市)
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24560435
[Presentation] SiO2/Si 界面の緩和エネルギーから推定した誘電率の評価
- Author(s)
  森谷真帆, 天野裕士, 小林大輔, 山本知之, 廣瀬和之
- Organizer
  2014年第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-26390072
[Presentation] Zr Lα線源を用いたAESによるSiO2/Si界面構造の評価
- Author(s)
  天野裕司, 小林大輔, 野平博司, 廣瀬和之
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26390072

1. HIROSE Kazuyuki (00280553)

# of Collaborated Projects: 5 results

# of Collaborated Products: 74 results
2. NOHIRA Hiroshi (30241110)

# of Collaborated Projects: 4 results

# of Collaborated Products: 57 results
3. HATTORI Takeo (10061516)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
4. 牧野高紘 (80549668)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
5. SAITO Hirobumi (80150051)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kobayashi Daisuke 小林 大輔

KOBAYASHI Daisuke 小林 大輔

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放射線を当てずに放射線ソフトエラー信頼性を評価する技術Principal Investigator

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Soft-Error Screening for Low-Cost High-Reliability LSI DevelopmentPrincipal Investigator

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XPS Study on ultra thin SiO2 film formed on Si substrates with several surface orientations

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Radiation-induced increase in local temperature and its effects on soft error tolerancePrincipal Investigator

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Study on dielectric constant of ultrathin SiO2 by using XPS and first-principles calculation

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Experimental waveform study of SET pulses leading to soft errors in logic LSIPrincipal Investigator

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Study on dielectric constant of ultrathin films in gate structures

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LSI Test Technology for Evaluating Soft-Error-Rates in Combinational Logic CircuitsPrincipal Investigator

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[Book] X線光電子分光による誘電率の推定法2016

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[Journal Article] Threshold and Characteristic LETs in SRAM SEU Cross Section Curves2023

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[Journal Article] Exploring magic equations for soft error reliability2023

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[Journal Article] Exploring magic equations for soft-error reliability2023

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[Journal Article] ITサステナビリティに与える宇宙の影響2023

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Kobayashi Daisuke 小林大輔

KOBAYASHI Daisuke 小林大輔