宮崎 誠一  Miyazaki Seiichi

Japanese Journal of Applied Physics

巻: 63 号: 3 ページ: 03SP04-03SP04

10.35848/1347-4065/ad1ca0

Japanese Journal of Applied Physics

巻: 63 号: 2 ページ: 02SP72-02SP72

10.35848/1347-4065/ad1777

Japanese Journal of Applied Physics

巻: 63 号: 2 ページ: 02SP99-02SP99

10.35848/1347-4065/ad1898

Japanese Journal of Applied Physics

巻: 62 号: SG ページ: SG1007-SG1007

10.35848/1347-4065/acb65c

Materials Science in Semiconductor Processing

巻: 162 ページ: 107526-107526

10.1016/j.mssp.2023.107526

ECS Transactions

巻: 112 号: 1 ページ: 131-137

10.1149/11201.0131ecst

Jpn. J. Appl. Phys.

巻: 62 号: SC ページ: SC1027-SC1027

10.35848/1347-4065/acac6f

Jpn. J. Appl. Phys.

巻: 62 号: SA ページ: SA1002-SA1002

10.35848/1347-4065/ac73d9

Applied Physics Express

巻: 15 号: 5 ページ: 55503-55503

10.35848/1882-0786/ac6727

IEICE Trans, on Electronics

巻: E102-5 ページ: 610-615

IEICE Trans, on Electronics

巻: E102-6 ページ: 616-621

ECS Trans.

巻: 104 号: 4 ページ: 105-112

10.1149/10404.0105ecst

Jpn. J. Appl. Phys.

巻: 62 号: SC ページ: SC1059-SC1059

10.35848/1347-4065/acb1fd

Jpn. J. Appl. Phys.

巻: 61 号: SD ページ: SD1012-SD1012

10.35848/1347-4065/ac61aa

Japanese Journal of Applied Physics

巻: 61 号: SH ページ: SH1012-SH1012

10.35848/1347-4065/ac5fbc

Jpn. J. Appl. Phys.

巻: 61 号: SA ページ: SA1008-SA1008

10.35848/1347-4065/ac2036

Japanese Journal of Applied Physics

巻: 60 号: SB ページ: SBBK05-SBBK05

10.35848/1347-4065/abdad0

Applied Physics Express

巻: 11 号: 1 ページ: 011305-011305

10.7567/apex.11.011305

210000136059

Jpn. J. Appl. Phys.

巻: 58 号: SA ページ: SAAE01-SAAE01

10.7567/1347-4065/aaeb38

210000135209

Semicond. Sci. Technol.

巻: 33 ページ: 124021-124021

Materials Science in Semiconductor Processing

巻: 70 ページ: 183-187

Microelectronic Engineering

巻: 178 ページ: 85-88

10.1016/j.mee.2017.05.001

Microelectronic Engineering

巻: 178 ページ: 80-84

10.1016/j.mee.2017.05.002

Japanese Journal of Applied Physics

巻: 56 号: 6S1 ページ: 06GG07-06GG07

10.7567/jjap.56.06gg07

Material Science in Semiconductor Processing

巻: 印刷中

Journal of Applied Physics

巻: 119

Thin Solid Films

巻: 602 ページ: 68-71

ECS Trans.

巻: 75 ページ: 695-700

Thin Solid Films

巻: 602 ページ: 48-51

J. Appl. Phys.

巻: 119 号: 3 ページ: 033103-033103

10.1063/1.4940348

Trans. of Mat. Res. Soc. Jpn

巻: in press

Jpn. J. Appl. Phys.

巻: 53 号: 11S ページ: 11RA02-11RA02

10.7567/jjap.53.11ra02

210000144616

ECS Trans.

巻: 64 ページ: 365-370

AIP Advances

巻: 4 号: 8 ページ: 087110-087110

10.1063/1.4892823

IEICE Trans. on Electronics

巻: Vol. E97-C ページ: 393-396

130004519104

ECS Trans.

巻: 64 ページ: 241-248

ECS Trans.

巻: 64 ページ: 923-928

IEICE Trans. on Electronics

巻: Vol. E97-C ページ: 397-400

130004519105

Advanced Materials Research

巻: 750-752 ページ: 1011-1015

ECS Trans.

巻: 58 ページ: 231-237

MRS Proceedings

巻: 1510

10.1557/opl.2013.272

Trans. of MRS-J.

巻: 38 ページ: 393-396

IEICE Trans. on Electronics

巻: E96-C ページ: 694-698

110009588297

Jpn. J. Appl. Phys.

巻: 52 号: 4S ページ: 04CG08-04CG08

10.7567/jjap.52.04cg08

210000142065

Jpn. J. Appl. Phys.

巻: 51 号: 4S ページ: 04DG08-04DG08

10.1143/jjap.51.04dg08

210000140534

Key Engineering Materials

巻: Vol.470 ページ: 135-139

10.4028/www.scientific.net/kem.470.135

ECS Trans.

巻: 41 号: 7 ページ: 93-98

10.1149/1.3633288

Solid State Electronics

巻: Vol.60 ページ: 65-69

http://dx.doi.org/10.1016/j.sse.2011.01.035

ECS Trans

巻: Vol.41 ページ: 93-98

http://dx.doi.org/10.1149/1.3633288

Jpn. J. Appl. Phys.

巻: Vol.50, No.8 号: 8S2 ページ: 08KE06-08KE06

10.1143/jjap.50.08ke06

Thin Solid Films Vol.518

Thin Solid Films

巻: 518

J.of Materials Science Forum

巻: 638-642 ページ: 1725-1730

Jpn. J. Appl. Phys.

巻: Vol.50, No.4 号: 4S ページ: 04DD04-04DD04

10.1143/jjap.50.04dd04

Jpn. J. Appl. Phys (in press)

210000069046

IEICE Trans. on Electronics Vol.E92-C,No.5

ページ: 616-619

ECS Trans. Vol.25, No.7

ページ: 433-439

Solid State Phenomena Vol.154

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ECS Trans Vol.25, No.7

ページ: 433-439

Solid State Phenomena Vol.154

ページ: 95-100

Trans. of MRS-J Vol.34,No.2

ページ: 309-312

130005003983

Japanese Journal of Applied Physics 47

Thin Solid Films 517

ページ: 306-308

Japanese Journal of Applied Physics 47(in press)

Thin Solid Films 517

ページ: 41-44

Japanese Journal of Applied Physics 47

ページ: 3103-3106

Thin Solid Films 517

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Japanese Journal of Applied Physics 47(in press)

Japanese Journal of Applied Physics 47

ページ: 3099-3102

210000064670

Jpn. J. of Appl. Phys Vol.47, No.4

ページ: 3099-3102

210000064670

Institute of Electronics Information and Communication Engineers Transactions on Electronics E91-C(in press)

110006343827

Jpn. J. Appl. Phys Vol.47, No.4B

ページ: 3103-3106

Institute of Electronics Informatioii and Communication Engineers Transactions on Electronics E91-C

110006343827

Japanese Journal of Applied Physics 47

Japanese Journal of Applied Physics 47

ページ: 3099-3102

Thin Solid Films Vol.517, No. 1

ページ: 41-44

Thin Solid Films 517

ページ: 41-44

Japanese Journal of Applied Physics 47

ページ: 3103-3106

Electrochemical Society Transaction 16

ページ: 255-260

Electrochemical Society Transaction 16

ページ: 255-260

Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C

ページ: 712-715

Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C

ページ: 712-715

Materials Science Forum 561-565

ページ: 1213-1216

Electrochemical Society Transactions 11

ページ: 233-243

Materials Science Forum 561-565

ページ: 1213-1216

Solid State Phenomena 121-123

ページ: 557-560

Solid State Phenomena 121-123

ページ: 557-560

Proceedings of The 8th International Conference on Solid-State and Integrated-Circuit Technology

ページ: 736-739

Collected Abst. of 2006 RCIQE Int.Seminar for 21st Century COE Program : "Quantum Nanoelectronics for Meme-Media-Based Information Technologies(IV)"

ページ: 41-44

ESC Trans. 2(印刷中)

120006665133

Abst. of 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics

ページ: 49-50

Proceedings of The 8th International Conference on Solid-State and Integrated-Circuit Technology

ページ: 736-739

Electrochemical Society(ECS) Trans. 2・1

ページ: 157-157

120006665133

Electrochemical Society(ECS) Trans. 2・1

ページ: 157-157

120006665133

Abst. of 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics

ページ: 49-50

IEICE Trans.on Electronics E88-C/4(In press)

110003175632

Proc.of Int.Symp.on Surface Science and Nanotechnology

ページ: 541-541

Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-40]

ページ: 112-113

Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]

ページ: 32-33

Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]

ページ: 294-295

Ext. Abst. of The 2005 Int. Conf.on Solid State Devices and Materials [G-2-6]

ページ: 174-175

表面技術 56-12

ページ: 162-168

10016921340

SPIE conference on Nanofabrication : Technologies, Devices, and Applications II (SA111) at Optics East

Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-34]

ページ: 100-101

Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-39]

ページ: 110-111

2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]

ページ: 177-180

月刊マテリアルステージ 5-3

ページ: 18-24

Applied Surface Science 244/1-4

ページ: 75-78

Abst.of First Int.Workshop on New Group IV Semiconductor Nanoelectronics

ページ: 39-40

Abst. of 2004 MRS Fall Meeting(Boston, U.S.A., Nov. 29-Dec. 3,2004)

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-39]

ページ: 98-99

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-35]

ページ: 90-91

Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices [H-2-4]

ページ: 126-127

110003175632

Abst. of 12th Int. conf. on Solid Films and Surfaces(Hamamatsu, June 21-25, 2004) [A5-2]

ページ: 137-137

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-40]

ページ: 100-101

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-31]

ページ: 82-83

Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials [H-2-4]

ページ: 126-127

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-18]

ページ: 52-53

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-34]

ページ: 88-89

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-19]

ページ: 54-55

Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004)

Applied Surface Science 244/1-4

ページ: 156-159

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-17]

ページ: 50-51

Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004)

110003175633

Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)

Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)

Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17, 2003)

Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)

110003175365

Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31,2003)

Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)

Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29,2004)

Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)

110003175364

Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)

110003175342

Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)

Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]

ページ: 90-91

Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31, 2003) [29B-2-3]

ページ: 22-23

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-39]

ページ: 98-99

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-34]

ページ: 88-89

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-40]

ページ: 100-101

Ext. Abst. of The 2005 Int. Conf. on Solid State Devices and Materials [G-2-6]

ページ: 174-175

IEICE

巻: Vol.94-C, No.5 ページ: 730-736

10029505917

Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29, 2004) [28P-6-68L]

ページ: 216-217

Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-9-1]

ページ: 846-847

Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]

ページ: 32-33

Abst. of 12th Int. conf. on Solid Films and Surfaces (Hamamatsu, June 21-25, 2004 ) [A5-2]

ページ: 137-137

Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.4]

ページ: 151-154

110003175365

Abst. of 2004 MRS Fall Meeting (Boston, U.S.A., Nov. 29-Dec. 3, 2004) D5-8

Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004) NO.1013

Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.5]

ページ: 277-280

110003175633

Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.4]

ページ: 273-276

110003175632

Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-17]

ページ: 42-43

Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [2.4]

ページ: 37-40

110003175342

Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.3]

ページ: 145-149

110003175364

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-17]

ページ: 50-51

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-19]

ページ: 54-55

Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-3-3]

ページ: 300-301

Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-18]

ページ: 52-53

Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-31]

ページ: 82-83

Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-18]

ページ: 44-45

Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-16]

ページ: 40-41

Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials (Tokyo, September 15-17, 2004) [H-2-4]

ページ: 126-127

Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17,2003) [P2-45]

ページ: 209-210