Hiramoto Toshiro 平本俊郎

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HIRAMOTO Toshiro 平本俊郎

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Researcher Number	20192718
Other IDs
External Links
Affiliation (Current)	2025: 東京大学, 生産技術研究所, 教授
Affiliation (based on the past Project Information) *help	2011 – 2023: 東京大学, 生産技術研究所, 教授 2002 – 2009: 東京大学, 生産技術研究所, 教授 2007: 東大, 生産技術研究所, 教授 1996 – 2001: VLSI Design and Education Center, the University of Tokyo, 大規模集積システム設計教育研究センター, 助教授 1998: 東京大学, 大規模集積システム設計教育研究センサー, 助教授 1997: 東京大学, 大規模集積システム設計教育センター, 助教授 1994 – 1996: 東京大学, 生産技術研究所, 助教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / Science and Engineering / Electronic materials/Electric materials / Medium-sized Section 21:Electrical and electronic engineering and related fields / Electrical and electronic engineering and related fields / Microdevices/Nanodevices / 極微細構造工学 Except Principal Investigator Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related / Electron device/Electronic equipment / 電子デバイス・機器工学 / Applied materials science/Crystal engineering / Science and Engineering
Keywords	Principal Investigator MOSFET / SOI / 特性ばらつき / 量子効果 / 大規模集積回路 / クーロンブロッケード / しきい値電圧 / 半導体物性 / 単電子トランジスタ / CMOS … More / MOSトランジスタ / ナノワイヤトランジスタ / 低消費電力 / VLSI / 量子ドット / 揺らぎ / LSI / シリコン / 単一電子 / Single-Electron Transistor / Coulomb Blockade / ナノテクノロジー / SET / Threshold Voltage / シリコンナノワイヤトランジスタ / 電子デバイス・機器 / Beyond CMOS / 不純物揺らぎ / 半導体 / SRAM / 保持時間 / 異方性エッチング / VLSIデバイス / 共鳴トンネル / 微細化 / スケーリング / MOS / 三次元集積化 / シリコン量子ドット / 量子コンピュータ / シリコン量子ビット / 低電圧 / 規模集積回路 / しきい値電圧自己調整 / Analog Pattern Matching Circuit / Functional Device / Quantum Effect Device / Nanoelectronics / 室温動作 / CMOS回路 / 量子效果デバイス / アナログパターンマッチング回路 / 新機能デバイス / 量子効果デバイス / ナノエレクトロニクス / Nanotechnology / Resonant Tunneling / Quantum Dot / Quantum Effect / Silicon MOSFET / Semiconductor / 量子輸送現象 / 移動度 / 不揮発性メモリ / シリコンMOSFET / Scaling / Finite Element Method / Quantum Confinement / Characteristics Fluctuations / Quantum Effects / 完全空乏型SOI / 二次元閉じこめ / 反転層容量 / 薄膜SOI / 量子閉じ込め / 有限要素法 / anisotropic etching / silicon dot / Coulomb blockade / single electron / silicon nanodevice / 自己形成 / ナノデバイス / シリコンドット / シリコンナノデバイス / Silicon Oxide / Interface Traps / Oxidation / Charge Pumping / Si / 拡散 / 酸化膜界面 / 酸化 / チャージポンピング / 界面準位 / VLSI devices / Stochastic Fluctuations of Dopant Atoms / Fully Depleted SOI devices / Fluctuations / Thin Film SOI MOSFET / 薄膜SOIMOS / デバイスシミュレーション / 薄膜SOI MOS / LSIデバイス / 0.1ミクロンMOSFET / SIMOX / 不純物数の統計的揺らぎ / 完全空乏型SOI MOSFET / サブ0.1ミクロンMOSFET / 薄膜SOI MOSFET / 統計分布 / 単一不純物 / 離散不純物ゆらぎ / サブスレッショルド / 超低消費電力 / 超低エネルギー / 電子デバイス・集積回路 / ナノワイヤ / クーロンブロッケード振動 / 集積回路 / 不純物ゆらぎ / 基板バイアス効果 / 半導体超微細化 / 正規分布 / ランダムテレグラフノイズ / 不揮発生SRAM回路 / 基板バイパス / 強誘電体SPICEモデル / 不揮発性SRAM回路 / 強誘電体ゲートFET / 基板バイアス / 低スタンバイ消費電力 / FeRAM / 不揮発性ラッチ回路 / 強誘電体FET / しきい値 / 基盤バイアス / 半導体MOSFET / 双方安定状態 / メモリ / 単電子 / 薄膜 / カンチレバ- / ドライエッチング / クチュエータ / スパッタリング / シリコンVLSIプロセス / マイクロマシンシステム / 磁気歪み効果 / 単電子デバイス / 不純物の統計的揺らぎ / レトログレードチャネルMOSFET / デルタドープMOSFET / ホッピング / 短チャネル効果 / 統計的揺らぎ / 不純物 / LST / デルタドープ / 極微細構造 / スプリットゲート … More Except Principal Investigator Super Connect / LSI / 量子ドット / 量子リザバー計算 / シリコンナノワイヤー / 量子セキュリティ / PUF / スピン量子ビット / 量子指紋 / トランジスタ / HfO2 / 強誘電性 / IoT / 負性容量 / 酸化ハフニウム / 強誘電体 / 不揮発性メモリ / 負性容量トランジスタ / 低消費電力 / Simulated Diffusion / Repeater / Wiring Delay / Scaling / simulated diffusion / Simulated diffusion / リピータ / 配線遅延 / 微細化 / micromachining / plastic deformation of Si / mill wave / electropolishing / semiconductor process / atomic force microscope / optical system / fine machining / micromachine / マイクロマシニング / シリコンの塑性変形 / ミリ波 / 電解研磨 / 半導体プロセス / 原子間力顕微鏡 / 光学システム / 微細加工 / マイクロマシン / Semiconductor / One-Dimensional Structures / Single electron / Resonant Tunneling / Super lattice / Quantum Dot / Quantum Nano-Structures / Mesoscopic / 半導体 / 一次元構造 / 単一電子 / 共鳴トンネル / 超格子 / 量子ナノ構造 / メソスコピック / 超薄膜 / デバイス設計・製造プロセス / 特性ばらつき / ナノデバイスインテグリティ / ナノCMOS / ナノ材料 / デバイス設計・製造プロセス・超薄膜 / 半導体超微細化 / 電子デバイス / ポストスケーリング技術 / スケーリング則 / MOSFET / シリコンULSI / 量子ドットレーザ / 量子ドット検出器 / 量子ドットメモリー / 量子ドットレーザー / 単電子効果 / 零次元電子 / 電子の波動性 / ナノ構造 / ドライエッチング / 電気化学走査型トンネル顕微鏡 / 金属ショットキーゲート / 電子波方向性結合デバイス / コヒーレンス長 / 共鳴トンネルダイオード / クーロンブロッケード振動 / 細線MOSFET / Si量子細線 / エッジ量子細線 / 電子波コヒーレンス長 / 電解液中STM / 集束イオンビーム注入 / InAs量子箱 / 一次元励起子 / T字形量子細線 / シリコン量子構造 / 走査ホットエレクトロン顕微鏡 / 電子波回折 Less

Generation and extraction of device fingerprints (quantum fingerprints) based on physics of spin qubits
- Principal Investigator
  
  棚本哲史
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 13020:Semiconductors, optical properties of condensed matter and atomic physics-related
- Research Institution
  Teikyo University
Scalable Silicon Quantum Dots with Stacked Layered Structures for 3D IntegrationPrincipal Investigator
- Principal Investigator
  
  Hiramoto Toshiro
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Self-Convergence Mechanism of Transistor Characteristics Variability for 0.1V OperationPrincipal Investigator
- Principal Investigator
  
  Hiramoto Toshiro
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Research Field
  
  Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Research and development of ultralow power circuit built by steep subthreshold slope FET and embedded FeRAM based on ferroelectric HfO2 thin film
- Principal Investigator
  
  Kobayashi Masaharu
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Ultra-Low Voltage Operating Silicon Nanowire Transistors with Threshold Voltage Self-Adjusting MechanismPrincipal Investigator
- Principal Investigator
  
  Hiramoto Toshiro
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Low voltage operation of new functional circuits by a silicon single electron transistor and CMOS at room temperaturePrincipal Investigator
- Principal Investigator
  
  Hiramoto Toshiro
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Basic research on influence of single impurity atom on statistics of nanoscale transistor characteristicsPrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2014
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Basic research on ultra-low voltage MOS transistors aiming at sub-100mV operationPrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Creation of New Functionalities by Integration of Room-Temperature Operating Single Electron Transistors and Large-Scale CMOS CircuitsPrincipal Investigator
- Principal Investigator
  
  Hiramoto Toshiro
- Project Period (FY)
  2011 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Nano MOSFET Fluctuations and Device IntegrityPrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Technology Evolution for Silicon Nano-Electronics
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperaturePrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2004 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  The University of Tokyo
高・強誘電体膜を用いた極低電圧・超低消費電力FET,及び高性能新機能素子の開発Principal Investigator
- Principal Investigator
  
  平本俊郎
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Exploration of Physics and Integration of Nano-Scale MOSEFET with Suppressed FluctuationsPrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  The University of Tokyo
量子ドット構造による電子の制御と次世代エレクトロニクスへの応用
- Principal Investigator
  
  榊裕之
- Project Period (FY)
  2000 – 2004
- Research Category
  
  Grant-in-Aid for COE Research
- Research Institution
  The University of Tokyo
量子ドットにおけるクローン閉塞現象を利用した双安定状態の発現に関する研究Principal Investigator
- Principal Investigator
  
  平本俊郎
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Fabrication of Silicon Nano-Devices with High Controllability beyond Lithography LimitPrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Study on Performance Increase and Fluctuation Suppression in Thin Film SOI MOSFET by utilizing quantum effectsPrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  University of Tokyo
ディープサブミクロン配線のタイミング特性の研究
- Principal Investigator
  
  SAKURAI Takayasu
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  University of Tokyo
不純物揺らぎによる特性ばらつきを抑えたデルタドープ型MOSデバイスに関する研究Principal Investigator
- Principal Investigator
  
  平本俊郎
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
MOS構造を有する単一電子デバイスの作成とそのCMOSチップへの集積化の研究Principal Investigator
- Principal Investigator
  
  平本俊郎
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
磁気歪み効果もつ薄膜材料を利用したマイクロマシンシステムの基礎研究Principal Investigator
- Principal Investigator
  
  平本俊郎
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  The University of Tokyo
不純物揺らぎによる特性ばらつきを抑えたデルタドープ型MOSデバイスに関する研究Principal Investigator
- Principal Investigator
  
  平本俊郎
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
MOS構造を有する単一電子デバイスの作製とそのCMOSチップへの集積化の研究Principal Investigator
- Principal Investigator
  
  平本俊郎
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  The University of Tokyo
Investigation of Oxidation Mechanisms in SOI StructuresPrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  University of Tokyo
二重ゲートを有するシリコン超微細構造デバイスの作製とその量子輸送現象に関する研究Principal Investigator
- Principal Investigator
  
  平本俊郎
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  極微細構造工学
- Research Institution
  The University of Tokyo
Quantum Semiconductor Electronics
- Principal Investigator
  
  ARAKAWA Yasuhiko
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Integration of Fabrication Technology for Micromechatronics
- Principal Investigator
  
  MASUZAWA Takahisa
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for international Scientific Research
- Research Institution
  The University of Tokyo
Fluctuations of Characteristics in Sub-0.1mum Thin Film SOI CMOS LSI DevicesPrincipal Investigator
- Principal Investigator
  
  HIRAMOTO Toshiro
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  University of Tokyo
半導体量子位相デバイス
- Principal Investigator
  
  古屋一仁
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tokyo Institute of Technology

[Book] 集積ナノデバイス2009
- Author(s)
  平本俊郎, 内田建, 竹内潔, 杉井信之
- Publisher
  丸善
- Data Source
  KAKENHI-PROJECT-18063006
[Book] "Integration of Silicon Single-Electron Transistors Operating at Room Tem perature", NATO Science for Peace and Security Series-B : Physics and Biophysics "Nanoscaled Semiconductor-on-Insulator Structures and Devices2007
- Author(s)
  Toshiro Hiramoto
- Total Pages
  16
- Publisher
  NATO
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Book] Chapter 4 : Quantum Effects in Silicon Nanodevices", Silicon Nanoelectronics2006
- Author(s)
  Toshiro Hiramoto
- Total Pages
  20
- Publisher
  Taylor & Francis
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Book] "Chapter 6. Room-Temperature Operating Silicon Single-Electron Transistors, " in Handbook of Semiconductor Nanostructures and Devices2006
- Author(s)
  Masumi Saitoh, Toshiro Hiramoto
- Total Pages
  41
- Publisher
  American Scientific Publishers
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Book] 「6.1. 電子1個でもトランジスタは動く? 」「6.2. シリコン単電子トランジスタの室温動作」, 科学立国日本を築く : 極限に挑む気鋭の研究者たち2006
- Author(s)
  平本俊郎
- Total Pages
  10
- Publisher
  (財)丸文研究交流財団選考委員会
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature2021
- Author(s)
  Sekiguchi Shohei、Ahn Min-Ju、Mizutani Tomoko、Saraya Takuya、Kobayashi Masaharu、Hiramoto Toshiro
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 9 Pages: 1151-1154
- DOI
  10.1109/jeds.2021.3108854
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19H00754
[Journal Article] Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application2018
- Author(s)
  Mizutani Tomoko、Takeuchi Kiyoshi、Saraya Takuya、Kobayashi Masaharu、Hiramoto Toshiro
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FD08-04FD08
- DOI
  10.7567/jjap.57.04fd08
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K18866
[Journal Article] Experimental Demonstration of a Nonvolatile SRAM with Ferroelectric HfO2 Capacitor for Normally Off Application2018
- Author(s)
  Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, and Toshiro Hiramoto
- Journal Title
  
  Journal of the Electron Devices Society
  
  Volume: 6 Pages: 280-285
- DOI
  10.1109/jeds.2018.2800090
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor2018
- Author(s)
  Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, and Toshiro Hiramoto
- Journal Title
  
  Journal of the Electron Devices Society
  
  Volume: 6 Pages: 346-353
- DOI
  10.1109/jeds.2018.2806920
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] On gate stack scalability of double-gate negative-capacitance FET with ferroelectric HfO2 for energy efficient sub-0.2V operation2017
- Author(s)
  Kyungmin Jang, Takuya Sayara, Masaharu Kobayashi, and Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 136 Issue: 2 Pages: 60-67
- DOI
  10.7567/jjap.57.024201
- NAID
  210000148597
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] Negative Capacitance for Boosting Tunnel FET Performance”, IEEE Transactions on Nanotechnology2017
- Author(s)
  Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, and Toshiro Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology
  
  Volume: 16 Issue: 2 Pages: 253-258
- DOI
  10.1109/tnano.2017.2658688
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] I on /I off ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO22017
- Author(s)
  Jang Kyungmin, Saraya Takuya, Kobayashi Masaharu, Hiramoto Toshiro
- Journal Title
  
  Solid State Electronics
  
  Volume: 136 Pages: 60-67
- DOI
  10.1016/j.sse.2017.06.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] Peak Position Control of Coulomb Blockade Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature2014
- Author(s)
  Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 4S Pages: 04EJ08-04EJ08
- DOI
  10.7567/jjap.53.04ej08
- NAID
  210000143664
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23246064
[Journal Article] Integration of Complementary Metal-Oxide-Semiconductor 1-Bit Analog Selectors and Single-Electron Transistors Operating at Room Temperature2013
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 4S Pages: 04CJ05-04CJ05
- DOI
  10.7567/jjap.52.04cj05
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-10J07824, KAKENHI-PROJECT-23246064
[Journal Article] Experimental Observation of Quantum Confinement Effect in (110) and (100) Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature2013
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 10R Pages: 104001-104001
- DOI
  10.7567/jjap.52.104001
- NAID
  40022765823
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-23246064
[Journal Article] Threshold Voltage Dependence of Threshold Voltage Variability in Intrinsic Channel Silicon-on-Insulator2010
- Author(s)
  C.Lee, A.T.Putra, K.Shimizu, T.Hiramoto
- Journal Title
  
  No.4, Issue 2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors2009
- Author(s)
  A.T.Putra, A.Nishida, S.Kamohara, T.Hiramoto
- Journal Title
  
  Applied Physics Express Vol.2, No.2
  
  Pages: 24501-24501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Random Threshold Voltage Variability Induced by Gate Edge Fluctuations in Nanoscale Metal-Oxide- Semiconductor Field-Effect-Transistors2009
- Author(s)
  A. T. Putra, A. Nishida, S. Kamohara, and T. Hiramoto
- Journal Title
  
  Applied Physics Express Vol. 2, No. 2
  
  Pages: 24501-24501
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal-Oxide-Semiconductor Field-Effect Transistors in 45nm Technology and Beyond2009
- Author(s)
  A.T.Putra, A.Nishida, S.Kamohara, T.Tsunomura, T.Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol.48, No.4
  
  Pages: 44502-44502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] MOSトランジスタのスケーリングに伴う特性ばらつき2009
- Author(s)
  平本俊郎, 竹内潔, 西田彰男
- Journal Title
  
  電子情報通信学会会誌 Vol.92, No.6
  
  Pages: 416-426
- NAID
  110007227367
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal-Oxide-Semiconductor Field-Effect-Transistors2009
- Author(s)
  A.T.Putra, T.Tsunomura, A.Nishida, S.Kamohara, K.Takeuchi, T.Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol.48, No.6
  
  Pages: 64504-64504
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors2009
- Author(s)
  Arifin Tamsir Putra, Akio Nishida, Shim Kamohara, and Toshiro Hiramoto
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 24501-24501
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Experimental Study on Quantum Confinement Effects in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors and Single-Electron Transistors2008
- Author(s)
  Masaharu Kobayashi, Toshiro Hiramoto
- Journal Title
  
  Journal of Applied Physics 103
  
  Pages: 53709-53709
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008
- Author(s)
  Tetsu Ohtou, Takuya Saraya, and Toshiro Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices 54
  
  Pages: 40-46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor2008
- Author(s)
  Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters vol. 92. no. 7, 073502
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Strong dependence of tunneling transport properties on over-driving voltage for room-temperature-operating single electron/hole transistors formed with ultra narrow [100] silicon nanowire channel2008
- Author(s)
  Sejoon Lee, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters vol. 93, No. 4
  
  Pages: 43508-43508
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] On the Origin of Negative Differential Conductance in Ultranarrow Wire Channel Silicon Single-Electron and Single-Hole Transistor2008
- Author(s)
  Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics vol. 47, no. 3
  
  Pages: 1813-1817
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Strong dependence of tunneling transport properties on over-driving voltage for room-temperature-operating single electron/hole transistors formed with ultra narrow [100] silicon nanowire channel2008
- Author(s)
  Sejoon Lee, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters vol. 93, No. 4. 043508
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor2008
- Author(s)
  Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters 92
  
  Pages: 73502-73502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on Quantum Confinement Effects in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors and Single-Electron Transistors2008
- Author(s)
  Masaharu Kobayashi, Toshiro Hiramoto
- Journal Title
  
  Journal of Applied Physics vol. 103, no. 5
  
  Pages: 53709-53709
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] 増大する微細MOSトランジスタの特性ばらつき:現状と対策2008
- Author(s)
  平本俊郎, 竹内潔, 西田彰男
- Journal Title
  
  電気学会論文誌C Vol.128, No.6
  
  Pages: 820-824
- NAID
  10021132489
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Experimental Study on Quantum Confinement Effects in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors and Single-Electron Transistors2008
- Author(s)
  Masaharu Kobayashi, Toshiro Hiramoto
- Journal Title
  
  Journal of Applied Physics vol. 103. no. 5, 053709
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008
- Author(s)
  T. Ohtou, T. Saraya, and T. Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices(Invited) vol. 54, no. 1
  
  Pages: 40-46
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Variable Body-Factor SOI MOSFET with Ultrathin Buried Oxide for Adaptive Threshold Voltage and Leakage Control2008
- Author(s)
  T.Ohtou, T.Saraya, T.Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices vol.54, no.1
  
  Pages: 40-46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor2008
- Author(s)
  Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters vol. 92, no. 7
  
  Pages: 73502-73502
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX2007
- Author(s)
  T. Ohtou, N. Sugii, and T. Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters Vol. 28, No. 8
  
  Pages: 740-742
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Experimental Study on Breakdown of Mobility Universality in <100>-directed (110)-oriented pMOSFETs2007
- Author(s)
  K. Shimizu, G Tsutsui, D. Januar, T. Saraya, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol. 6, No. 3
  
  Pages: 358-361
- NAID
  10018234140
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX2007
- Author(s)
  Tetsu Ohtou, Nobuyuki Sugii, and Toshiro Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters 28
  
  Pages: 740-742
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Threshold-Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme2007
- Author(s)
  T.Ohtou, K.Yokoyama, K.Shimizu, T.Nagumo, T.Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol.54, No.2
  
  Pages: 301-307
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations2007
- Author(s)
  T. Hiramoto, T. Nagumo, T. Ohtou, and K. Yokoyama
- Journal Title
  
  IEICE Transactions on Electronics(Invited) Vol. E90-C, No. 4
  
  Pages: 836-841
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]- Directed Channels at Room Temperature2007
- Author(s)
  M. Kobayashi, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46, No. 1
  
  Pages: 24-27
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Threshold-Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme2007
- Author(s)
  T.Ohtou, K.Yokoyama, K.Shimizu, T.Nagumo, T.Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol. 54, No. 2
  
  Pages: 301-307
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm2007
- Author(s)
  Ken Shimizu, Gen Tsutsui, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46, No. 20
- NAID
  110006391851
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully Depleted SOI MOSFETs With Extremely Thin BOX2007
- Author(s)
  T.Ohtou, N.Sugii, T.Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters Vol.28, No.8
  
  Pages: 740-742
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]-and [110]-Directed Channels at Room Temperature2007
- Author(s)
  M. Kobayashi, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46, No. 1
  
  Pages: 24-27
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm2007
- Author(s)
  Ken Shimizu, Gen Tsutsui, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46. No. 20
- NAID
  110006391851
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on Breakdown of Mobility Universality in <100>-directed (110)-oriented pMOSFETs2007
- Author(s)
  K. Shimizu, G. Tsutsui, D. Januar, T. Saraya, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol. 6, No. 3
  
  Pages: 358-361
- NAID
  10018234140
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature2007
- Author(s)
  Kousuke Miyaji, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters 91
  
  Pages: 53509-53509
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Threshold- Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme2007
- Author(s)
  T. Ohtou, K. Yokoyama, K. Shimizu, T. Nagumo, and T. Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol. 54, No. 2
  
  Pages: 301-307
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single-and Double-Gate Operations2007
- Author(s)
  Gen Tsutsui, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46, No. 9A
  
  Pages: 5686-5690
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Singleand Double-Gate Operations2007
- Author(s)
  Gen Tsutsui, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46, No. 9A
  
  Pages: 5686-5690
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature2007
- Author(s)
  Kousuke Miyaji, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters Vol. 91, No. 5
  
  Pages: 53509-53509
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Large Coulomb-Blockade Oscillations and Negative Differential Conductance in Silicon Single-Electron Transistors with [100]- and [110]- Directed Channels at Room Temperature2007
- Author(s)
  M.Kobayashi, T.Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol.46, No.1
  
  Pages: 24-27
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature2007
- Author(s)
  Kousuke Miyaji, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters Vol. 91, No. 5, 053509
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations2007
- Author(s)
  T.Hiramoto, T.Nagumo, T.Ohtou, K.Yokoyama
- Journal Title
  
  IEICE Transactions on Electronics Vol.E90-C, No.4
  
  Pages: 836-841
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors2007
- Author(s)
  T. Hiramoto (Invited)
- Journal Title
  
  ECS Transactions Vol. 11, No. 6
  
  Pages: 403-411
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Threshold-Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme2007
- Author(s)
  T.Ohtou, K.Yokoyama, K.Shimizu, T.Nagumo, T.Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol. 54, No. 2
  
  Pages: 301-307
- Data Source
  KAKENHI-PROJECT-18063013
[Journal Article] Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime2006
- Author(s)
  A.T.Putra, M.Saitoh, G.Tsutsui, T.Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol.45, No.8A
  
  Pages: 6173-6176
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Compact Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistros with Discrete Quantum Energy Levels2006
- Author(s)
  K.Miyaji, M.Saitoh, T.Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol.5, No.3
  
  Pages: 167-173
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Design Guideline of Multi-Gate MOSFETs With Substrate-Bias Control2006
- Author(s)
  T.Nagumo, Toshiro Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol. 53, No. 12
  
  Pages: 3025-3031
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime2006
- Author(s)
  A.T.Putra, M.Saitoh, G.Tsutsui, T.Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 45, No. 8A
  
  Pages: 6173-6176
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Emerging nanoscale silicon devices taking advantage of nanostructure physics2006
- Author(s)
  T. Hiramoto, M. Saitoh, G. Tsutsui
- Journal Title
  
  IBM Journal of Research and Development Vol. 50, No. 4/5
  
  Pages: 411-418
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Mobility and Threshold-Voltage Comparison Between (110)- and (100)-Oriented Ultrathin-Body Silicon MOSFETs2006
- Author(s)
  G. Tsutsui, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol. 53, No. 10
  
  Pages: 2582-2588
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors2006
- Author(s)
  K. Miyaji, M. Saitoh, T. Hiramoto
- Journal Title
  
  Applied Physics Letters Vol. 88, No. 14
  
  Pages: 143505-143505
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Compact Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2006
- Author(s)
  K.Miyaji, M.Saitoh, T.Hiramoto
- Journal Title
  
  IEEE Trans.Nanotechnology (発表予定)
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Emerging nanoscale silicon devices taking advantage of nanostructure physics2006
- Author(s)
  T. Hiramoto, M. Saitoh, G Tsutsui
- Journal Title
  
  IBM Journal of Research and Development Vol. 50, No. 4/5
  
  Pages: 411-418
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor2006
- Author(s)
  M.Kobayashi, M.Saitoh, T.Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol.45, No.8A
  
  Pages: 6157-6161
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Mobility and Threshold-Voltage Comparison Between (110)- and (100)-Oriented Ultrathin-Body Silicon MOSFETs2006
- Author(s)
  G Tsutsui, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol. 53, No. 10
  
  Pages: 2582-2588
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Full Width of Half Maximum of Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor Controlled by Voltage Gain2006
- Author(s)
  K.Miyaji, M.Saitoh, T.Hiramoto
- Journal Title
  
  APL (発表予定)
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Design Guideline of Multi-Gate MOSFETs with Substrate-Bias Control2006
- Author(s)
  T. Nagumo and T. Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol. 53, No. 12
  
  Pages: 3025-3031
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Compact Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2006
- Author(s)
  K. Miyaji, M. Saitoh, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol. 5, No. 3
  
  Pages: 167-173
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Design Guideline of Multi-Gate MOSFETs With Substrate-Bias Control2006
- Author(s)
  T.Nagumo, T.Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol.53, No.12
  
  Pages: 3025-3031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Mobility and Threshold-Voltage Comparison Between (110)-and (100)-Oriented Ultrathin-Body Silicon MOSFETs2006
- Author(s)
  G.Tsutsui, T.Hiramoto
- Journal Title
  
  IEEE Transactions on Electron Devices Vol. 53, No. 10
  
  Pages: 2582-2588
- Data Source
  KAKENHI-PROJECT-18063006
[Journal Article] Emergiing nanoscale silicon devices taking advantage of nanostructure physics2006
- Author(s)
  T.Hiramoto, M.Saitoh, G.Tsutsui
- Journal Title
  
  IBM Journal of Research and Development Vol.50, No.4/5
  
  Pages: 441-418
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors2006
- Author(s)
  K.Miyaji, M.Saitoh, T.Hiramoto
- Journal Title
  
  Applied Physics Letters Vol.88, No.14
  
  Pages: 143505-143505
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors2006
- Author(s)
  K. Miyaji, M. Saitoh, T. Hiramoto
- Journal Title
  
  Applied Physics Letters Vol. 88, No. 14, 143505.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation2006
- Author(s)
  S. Park, H. Im, I. Kim, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 45, No. 2A
  
  Pages: 638-642
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor2006
- Author(s)
  M. Kobayashi, M. Saitoh, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 45, No. 8A
  
  Pages: 6157-6161
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on Superior Mobility in (110)-Oriented UTB SOI pMOSFETs2005
- Author(s)
  G. Tsutsui, M. Saitoh, T. Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters Vol. 26, No. 11
  
  Pages: 836-838
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature2005
- Author(s)
  H. Harata, M. Saitoh, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44, Part 2, No. 20
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body SOI pMOSFETs2005
- Author(s)
  G. Tsutsui, M. Saitoh, T. Nagumo, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44, No. 6A
  
  Pages: 3889-3892
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature2005
- Author(s)
  Hidehiro Harata, Masumi Saitoh, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44, Part 2, No.20
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors2005
- Author(s)
  M. Saitoh, H. Harata, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44, No. 11
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body SOI pMOSFETs2005
- Author(s)
  G Tsutsui, M. Saitoh, T. Nagumo, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics. Vol. 44, No. 6A
  
  Pages: 3889-3892
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra Thin Body SOI MOSFETs2005
- Author(s)
  G Tsutsui, M. Saitoh, T. Nagumo, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol. 4, No. 3
  
  Pages: 369-373
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Enhancement of Charge Storage Performance in Double-Gate Silicon Nanocrystal Memories With Ultrathin Body Structure2005
- Author(s)
  K. Yanagidaira, M. Saitoh, T. Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters Vol. 26, No. 7
  
  Pages: 473-475
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Experimental Study on Superior Mobility in (110)-Oriented UTB SOI pMOSFETs2005
- Author(s)
  G Tsutsui, M. Saitoh, T. Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters Vol. 26, No. 11
  
  Pages: 836-838
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra Thin Body SOI MOSFETs2005
- Author(s)
  G. Tsutsui, M. Saitoh, T. Nagumo, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol. 4, No. 3
  
  Pages: 369-373
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Channel Width and Length Dependence in Si NanoCrystal Memories with Ultra-NanoScale Channel2005
- Author(s)
  J. Brault, M. Saitoh, T. Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology Vol. 4, No. 3
  
  Pages: 349-354
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin Body Silicon Nanocrystal Memories2005
- Author(s)
  K. Yanagidaira, M. Saitoh, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44, Part 1, No. 4B.
  
  Pages: 2608-2611
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Enhancement of Charge Storage Performance in Double-Gate Silicon Nanocrystal Memories With Ultrath in Body Structure2005
- Author(s)
  K. Yanagidaira, M. Saitoh, T. Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters Vol. 26, No. 7
  
  Pages: 473-475
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Room-Temperature Operation of Current Switching Circuit Using Integrated Silicon Single-Hole Transistors2005
- Author(s)
  Masimi Saitoh, Hidehiro Harata, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44, No.11
- Data Source
  KAKENHI-PROJECT-12CE2004
[Journal Article] Effects of Channel Thinning on Threshold Voltage Shift in Ultrathin Body Silicon Nanocrystal Memories2005
- Author(s)
  K. Yanagidaira, M. Saitoh, T. Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 44, Part 1, No. 4B
  
  Pages: 2608-2611
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect2004
- Author(s)
  Masumi Saitoh, Toshihiro Hiramoto
- Journal Title
  
  Applied Physics Letters Vol.85, No.25
  
  Pages: 6233-6235
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect2004
- Author(s)
  M. Saitoh, T. Hiramoto
- Journal Title
  
  IEE Electronics Letters Vol. 40, No. 13
  
  Pages: 837-838
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Dot in a Single-Hole Transistor at Room Temperature2004
- Author(s)
  Masumi Saitoh, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters Vol.84, No.16
  
  Pages: 3172-3174
- Data Source
  KAKENHI-PROJECT-12CE2004
[Journal Article] Extension of Coulomb Blockade Region by Quantum Confinement in the Ultrasmall Silicon Dot in a Single-Hole Transistor at Room Temperature2004
- Author(s)
  Masumi Saitoh, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters Vol. 84, No. 16
  
  Pages: 3172-3174
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Room-Temperature Demonstration of Low-Voltage and Tunable Static Memory Based on Negative Differential Conductance in Silicon Single-Electron Transistors2004
- Author(s)
  M. Saitoh, H. Harata, T. Hiramoto
- Journal Title
  
  Applied Physics Letters Vol. 85, No. 25
  
  Pages: 6233-6235
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Scaling of Nano-Crystal Memory Cell by Direct Tungsten Bitline on Self-Aligned Landing Plug Polysilicon Contact2004
- Author(s)
  I.Kim, K.Yanagidaira, T.Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters Vol.25, No.5
  
  Pages: 265-267
- Data Source
  KAKENHI-PROJECT-12CE2004
[Journal Article] Scaling of Nano-Crystal Memory Cell by Direct Tungsten Bitline on Self-Aligned Landing Plug Polysilicon Contact2004
- Author(s)
  I.Kim, K.Yanagidaira, T.Hiramoto
- Journal Title
  
  IEEE Electron Devices Letters Vol.25, No.5
  
  Pages: 265-267
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Room-temper ature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect2004
- Author(s)
  M. Saitoh, T. Hiramoto
- Journal Title
  
  IEE Electronics Letters Vol. 40, No. 13
  
  Pages: 837-838
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Extension of Coulomb Blockade Region by Quantum Confinement in the Ultrasmall Silicon Dot in a Single-Hole Transistor at Room Temperature2004
- Author(s)
  Masumi Saitoh, Toshiro Hiramoto
- Journal Title
  
  Applied Physics Letters Vol.84 No.16
  
  Pages: 3172-3174
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Room-temperature Operation of Current Switching Circuit Using Integrated Sillcon Single-Hole Transistors2004
- Author(s)
  Masumi Saitoh, Hidehiro Harata, Toshihiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics Vol.44, No.11
- Data Source
  KAKENHI-PROJECT-16201029
[Journal Article] Room-temperature demonstration of highly-functional single-hole transistor logic based on quantum mechanical effect2004
- Author(s)
  Masumi Saitoh, Toshiro Hiramoto
- Journal Title
  
  IEE Electronics Letters Vol.40, No.13
  
  Pages: 837-838
- Data Source
  KAKENHI-PROJECT-12CE2004
[Journal Article] Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors
- Author(s)
  T. Hiramoto (Invited)
- Journal Title
  
  ECS Transactions Vol. 11, No. 6, ULSI Process Integration 5
  
  Pages: 403-411
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Patent] ラッチ回路の電圧特性調整方法および半導体装置の電圧特性調整方法2009
- Inventor(s)
  平本俊郎, 鈴木誠, 桜井貴康
- Industrial Property Rights Holder
  東京大学
- Industrial Property Number
  2009-141510
- Filing Date
  2009-06-12
- Data Source
  KAKENHI-PROJECT-18063006
[Patent] ラッチ回路の電圧特性調整方法および半導体装置の電圧特性調整方法2009
- Inventor(s)
  平本俊郎
- Industrial Property Rights Holder
  東京大学
- Industrial Property Number
  2009-141510
- Filing Date
  2009-06-12
- Data Source
  KAKENHI-PROJECT-18063006
[Patent] 半導体装置2005
- Inventor(s)
  平本俊郎, 筒井元, 齋藤真澄
- Industrial Property Rights Holder
  (財)生産技術研究奨励会
- Industrial Property Number
  2005-170676
- Filing Date
  2005-06-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Patent] 不揮発性メモリ2004
- Inventor(s)
  平本俊郎, 柳平康輔, 齋藤真澄
- Industrial Property Rights Holder
  (財)生産技術研究奨励会
- Industrial Property Number
  2004-267143
- Filing Date
  2004-09-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Drain-Induced Variability Due to Quantum Confinement Effect in Extremely Narrow Silicon Nanowire Transistors with Width down to 2nm2018
- Author(s)
  Toshiro Hiramoto
- Organizer
  International Conference on Nanoelectronics Strategy (INS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] Statistics of Random Telegraph Noise Amplitude in Extremely Narrow Silicon Nanowire Transistors with Width down to 2nm2018
- Author(s)
  Toshiro Hiramoto
- Organizer
  International Conference on Nanoelectronics Strategy (INS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] 複数回ストレスを利用した特性ばらつき自己修復手法によるSRAMデータ保持電圧の最小化2018
- Author(s)
  水谷朋子，竹内潔，更屋拓哉，小林正治，平本俊郎
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K18866
[Presentation] 負性容量トランジスタに向けた強誘電性HfZrO2膜における負性容量の直接観測2017
- Author(s)
  上山望，小林正治，平本俊郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] ノーマリーオフ動作のための強誘電体HfO2を集積した不揮発性SRAM2017
- Author(s)
  小林正治，上山望，平本俊郎
- Organizer
  シリコン材料・デバイス研究会（SDM）
- Invited
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application2017
- Author(s)
  Masaharu Kobayashi, Nozomu Ueyama, and Toshiro Hiramoto
- Organizer
  VLSI symposium 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 低消費電力応用に向けた強誘電体HfO2薄膜不揮発性SRAMの動作実証2017
- Author(s)
  小林正治，上山望，平本俊郎
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Investigations on dynamic characteristics of ferroelectric HfO2 based on multi-domain interaction model2017
- Author(s)
  Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, and Toshiro Hiramoto
- Organizer
  Silicon Nano Workshop (SNW) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 強誘電体HfO2を用いたGate-All-Aroundナノワイヤ負性容量FETにおけるIon/Ioff比の向上とそのスケーラビリティ2017
- Author(s)
  Jang Kyungmin，更屋拓哉，小林正治，平本俊郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 強誘電性マルチドメイン相互作用モデルを用いた強誘電体HfO2の動特性に関する考察2017
- Author(s)
  Jang Kyungmin, 上山望，小林正治，平本俊郎
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Lowering Minimum Operation Voltage (Vmin) in SRAM Array by Post-Fabrication Self-Improvement of Cell Stability by Multiple Stress Application2017
- Author(s)
  Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi and Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K18866
[Presentation] 強誘電体HfO2ダブルゲート負性容量FETの動特性に関する考察2017
- Author(s)
  Jang Kyungmin、上山望、小林正治、平本俊郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Enhanced Variability by Quantum Confinement Effects in Extremely Narrow Silicon Nanowire MOSFETs with Nanowire Width down to 2nm2016
- Author(s)
  Toshiro Hiramoto
- Organizer
  12th International Nanotechnology Conference on Communication and Cooperation (INC12)
- Place of Presentation
  Leuven, Belgium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] Ultra-Low Power and Ultra-Low Voltage Devices and Circuits for IoT Applications2016
- Author(s)
  Toshiro Hiramoto, Kiyoshi Takeuchi, and Masaharu Kobayashi
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 線幅2nmの超微細シリコンナノワイヤトランジスタにおけるDIBLばらつきおよびデバイス内ばらつき2016
- Author(s)
  水谷朋子，竹内　潔，鈴木龍太，更屋拓哉，小林正治，平本俊郎
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会（SDM）
- Place of Presentation
  中央電気倶楽部（大阪府）
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] On Gate Stack Scalability of Double-Gate Negative-Capacitance FET with Ferroelectric HfO2 for Energy-Efficient Sub-0.2V Operation2016
- Author(s)
  Kyungmin Jang, Takuya Saraya, Masaharu Kobayashi, and Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Ion/Ioff Ratio Enhancement of Gate-All-Around Nanowire Negative-Capacitance FET with Ferroelectric HfO22016
- Author(s)
  Kyungmin Jang, Takuya Saraya, Masaharu Kobayashi, and Toshiro Hiramoto
- Organizer
  International Semiconductor Device Research Symposium (ISDRS)
- Place of Presentation
  Hyatt Regency Bethesda, Bethesda, MD, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO22016
- Author(s)
  Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, and Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  Hilton San Francisco Union Square, San Francisco, CA, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Negative Capacitance as a Performance Booster for Tunnel FET2016
- Author(s)
  Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, and Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 負性容量によるトンネルFETの性能向上負性容量によるトンネルFETの性能向上2016
- Author(s)
  小林正治，チャンキュンミン，上山　望，平本俊郎
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] サブ0.2Vの高エネルギー効率動作に向けた強誘電体HfO2ダブルゲート負性容量FETにおけるゲートスタックのスケーラビリティ2016
- Author(s)
  Jang Kyungmin，更屋拓哉，小林正治，平本俊郎
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 線幅2nmの超微細シリコンナノワイヤトランジスタにおけるドレイン電圧に起因する特性ばらつき2016
- Author(s)
  水谷朋子，竹内潔，鈴木龍太，更屋拓哉，小林正治，平本俊郎
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県）
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm2016
- Author(s)
  Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, and Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI. USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] 線幅2nmの超微細シリコンナノワイヤトランジスタにおける量子閉じ込め効果によるしきい値電圧および電流ばらつき2015
- Author(s)
  水谷朋子，棚橋裕麻，鈴木龍太，更屋拓哉，小林正治，平本俊郎
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県）
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] 線幅2nmの超微細シリコンナノワイヤトランジスタにおけるしきい値電圧および電流ばらつき2015
- Author(s)
  水谷朋子，棚橋裕麻，鈴木龍太，更屋拓哉，小林正治，平本俊郎
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  熊本市民会館崇城大学ホール(熊本県)
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] Characteristics of Silicon Nanowire Transistors for Integration with Room-Temperature Operating Silicon Single-Electron Transistors2015
- Author(s)
  T. Hiramoto
- Organizer
  Sweden-Japan QNANO Workshop
- Place of Presentation
  Hindas, Sweden
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] Threshold Voltage and Current Variability of Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm2015
- Author(s)
  T. Mizutani, Y. Tanahashi, R. Suzuki, T. Saraya, M. Kobayashi, and T. Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop
- Place of Presentation
  Rihga Royal Hotel Kyoto, Kyoto
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H02247
[Presentation] 浮遊ゲートを有する室温動作シリコン単電子トランジスタにおけるクーロンブロッケード振動のピーク位置制御2014
- Author(s)
  棚橋裕麻，鈴木龍太，更屋拓哉，平本俊郎
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Ultra-Low Voltage (0.1V) Operation of Vth Self-Adjusting MOSFET and SRAM Cell2014
- Author(s)
  Akitsugu Ueda, Seung-Min Jung, Tomoko Mizutani, Anil Kumar, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  VLSI Symposium on Technology
- Place of Presentation
  Honolulu, HI. USA
- Data Source
  KAKENHI-PROJECT-25630135
[Presentation] Ultra-Low Voltage (0.1V) Operation of Vth Self-Adjusting MOSFET and SRAM Cell2014
- Author(s)
  Akitsugu Ueda, Seung-Min Jung, Tomoko Mizutani, Anil Kumar, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  VLSI Symposium on Technology
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI. USA
- Year and Date
  2014-06-12
- Data Source
  KAKENHI-PROJECT-25630135
[Presentation] Peak Position Control of Coulomb Oscillations in Silicon Single-Electron Transistors with Floating Gate Operating at Room Temperature2013
- Author(s)
  Yuma Tanahashi, Ryota Suzuki, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Fukuoka
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Integration of Room-Temperature Operating Silicon Single-Electron Transistors and CMOS Circuits for Novel Information Processing2013
- Author(s)
  Toshiro Hiramoto, Ryota Suzuki, and Takuya Saraya
- Organizer
  9th International Nanotechnology Conference on Communication and Cooperation (INC9)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2013-05-16
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] 室温動作単電子トランジスタとCMOS 1-bitアナログセレクタの集積化2013
- Author(s)
  鈴木龍太，野末喬城，更屋拓哉，平本俊郎
- Organizer
  電子情報通信学会シリコンデバイス・材料(SDM)研究会
- Place of Presentation
  北海道大学
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Integration of Room-Temperature Operating Single-Electron Transistors with CMOS Circuits2013
- Author(s)
  Toshiro Hiramoto, Ryota Suzuki, and Takuya Saraya
- Organizer
  Sweden-Japan Workshop on Quantum Nano-Physics and Electronics (QNANO2013)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] 単電子トランジスタとCMOS回路の集積化に関する研究2013
- Author(s)
  鈴木龍太，野末喬城，更屋拓哉，平本俊郎
- Organizer
  固体エレクトロニクス・光エレクトロニクス研究会
- Place of Presentation
  東京大学
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] 室温動作シリコン単電子トランジスタとCMOSアナログセレクタ回路の集積化2013
- Author(s)
  鈴木龍太，野末喬城，更屋拓哉，平本俊郎
- Organizer
  2013年春季第60回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Reinvestigation of Dot Formation Mechanisms in Silicon Nanowire Channel Single-Electron/Hole Transistors Operating at Room Temperature2012
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Honolulu, HI. USA
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Integration of 1-bit CMOS Address Decoders and Single-Electron Transistors Operating at Room Temperature2012
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] シリコンナノワイヤチャネルを有する室温動作単電子/単正孔トランジスタにおけるドット形成メカニズム2012
- Author(s)
  鈴木龍太，野末喬城，更屋拓哉，平本俊郎
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Fully CMOS-Compatible Fabrication Process of Room-Temperature Operating Silicon Single-Electron Transistors2012
- Author(s)
  Ryota Suzuki, Motoki Nozue, Takuya Saraya, and Toshiro Hiramoto
- Organizer
  8th International Nanotechnology Conference on Communication and Cooperation (INC8)
- Place of Presentation
  Tsukuba
- Data Source
  KAKENHI-PROJECT-23246064
[Presentation] Statistical Comparison of Random Telegraph Noise (RTN) in Bulk and Fully Depleted SOI MOSFETs2011
- Author(s)
  J.Nishimura, T.Saraya, T.Hiramoto
- Organizer
  Ultimate Integration of Silicon (ULIS)
- Place of Presentation
  Cork, Ireland
- Year and Date
  2011-03-16
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Measurements and characterization of statistical variability2010
- Author(s)
  T.Hiramoto
- Organizer
  Workshop on Simulation and Characterization of Statistical CMOS Variability and Reliability, The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
- Place of Presentation
  Royal Hotel Carlton, Bologna, Italy
- Year and Date
  2010-09-09
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Suppression of DIBL and Current-Onset Voltage Variability in Intrinsic Channnel Fully Depleted SOI MOSFETs2010
- Author(s)
  T.Hiramoto
- Organizer
  IEEE International SOI Conference
- Place of Presentation
  米国・サンディエゴ
- Year and Date
  2010-10-14
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs2010
- Author(s)
  T.Hiramoto, T.Saraya, C.Lee
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics (ISTESNE)
- Place of Presentation
  Tokyo Institute of Technology
- Year and Date
  2010-06-03
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Simultaneously improvement of Write and Static Noise Margins in SRAM by Post-Fabrication Self-Convergence Technique2010
- Author(s)
  M.Suzuki, T.Saraya, K.Shimizu, T.Sakurai, T.Hiramoto
- Organizer
  Workshop "The Fruits of Variability Research in Europe", Design, Automation & Test in Europe (DATE)
- Place of Presentation
  International Congress Centre in Dresden, Dresden, Germany
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Variability research : accomplishments and future directions-a Japanese perspective2010
- Author(s)
  T.Hiramoto
- Organizer
  Workshop "The Fruits of Variability Research in Europe", Design, Automation & Test in Europe (DATE)
- Place of Presentation
  International Congress Centre in Dresden, Dresden, Germany
- Year and Date
  2010-03-12
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Silicon Nanowire FETs and Single-Electron/Hole Transistors under Uniaxial Strain at Room Temperature2009
- Author(s)
  Toshiro Hiramoto, Jiezhi Chen, YeonJoo Jeong, Takuya Saraya (Invited)
- Organizer
  International Symposium on Nanoscale Transport and Technology (NTT2009) (p. 99)
- Place of Presentation
  NTT Atsugi R&C Center, Kanagawa
- Year and Date
  2009-01-22
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Transport in Silicon Nanowire Transistors2009
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  International Semiconductor Technology Conference and China Semiconductor Technology International Conference (ISTC/CSTIC 2009) (p. 56)
- Place of Presentation
  Sheraton Shanghai. Shanghai, China
- Year and Date
  2009-03-20
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nanowire FETs and Single-Electron/Hole Transistors under Uniaxial Strain at Room Temperature2009
- Author(s)
  Toshiro Hiramoto, Jiezhi Chen, Yeon Joo Jeong, Takuya Saraya (Invited)
- Organizer
  International Symposium on Nanoscale Transport and, Technology (NTT2009)
- Place of Presentation
  厚木
- Year and Date
  2009-01-22
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Vth Dependence of Vth Variability in Intrinsic Channel SOI MOSFETs with Ultra-Thin BOX2009
- Author(s)
  C.Lee, A.T.Putra, K.Shimizu, T.Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Sendai
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Impact of Lateral Dopant Profile on Threshold Voltage Variability in Scaled MOSFETs2009
- Author(s)
  I.Yamato, A.T.Putra, T.Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop, pp.35-36
- Place of Presentation
  Kyoto
- Year and Date
  2009-06-13
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] A New Methodology for Evaluating VT Variability Considering Dopant Depth Profile2009
- Author(s)
  A.T.Putra, T.Tsunomura, A.Nishida, S.Kamohara, K.Takeuchi, S.Inaba, K.Terada, T.Hiramoto
- Organizer
  Symposium on VLSI Technology, pp.116-117
- Place of Presentation
  Kyoto
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Transport in Silicon Nanowire Transistors2009
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  International Semiconductor Technology Conference and China Semiconductor Technology International Conference (ISTC/CSTIC 2009)
- Place of Presentation
  中国上海
- Year and Date
  2009-03-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Anomalous Back-Bias Dependence of Threshold Voltage Variability in NMOSFETs Due to High Concentration Regions near Source and Drain2009
- Author(s)
  I.Yamato, T.Mama, T.Tsunomura, A.Nishida, T.Hiramoto
- Organizer
  International Semiconductor Device Research Symposium (ISDRS), WP5-04
- Place of Presentation
  University of Maryland, MD, USA
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Improvement of Static Noise Margin in SRAM by Post-Fabrication Self-Convergence Technique2009
- Author(s)
  M.Suzuki, T.Saraya, K.Shimizu, T.Sakurai, T.Hiramoto
- Organizer
  International Semiconductor Device Research Symposium (ISDRS), TP7-03
- Place of Presentation
  University of Maryland, MD, USA
- Year and Date
  2009-12-10
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Post-Fabrication Self-Convergence Scheme for Suppressing Variability in SRAM Cells and Logic Transistors2009
- Author(s)
  M.Suzuki, T.Saraya, K.Shimizu, T.Sakurai, T.Hiramoto
- Organizer
  Symposium on VLSI Technology, pp.148-149
- Place of Presentation
  Kyoto
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Evolutionary Trend of Silicon Nanoelectronics and Beyond CMOS Devices2008
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  Dry Process Symposium (DPS 2008) (pp. 109 - 110)
- Place of Presentation
  Kokuyo Hall (Tokyo)
- Year and Date
  2008-11-27
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of Fixed Charge at MOSFETs' SiO2/Si Interface on Vth Variation2008
- Author(s)
  A.T. Putra, T. Tsunomura, A. Nishida, S. Kamohara, K. Takeuchi, and T. Hiramoto
- Organizer
  International Conference on Simulation of Semiconductor Devices and Processes
- Place of Presentation
  神奈川県箱根町
- Year and Date
  2008-04-09
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Nanowire Channel Nanocrystal Memory with P-Doped Silicon Nanocrystals2008
- Author(s)
  Toshiro Hiramoto, Yuji Takahashi, Kousuke Miyaji, Takuya Saraya
- Organizer
  IEEE Nanotechnology Materials and Devices Conference
- Place of Presentation
  京都
- Year and Date
  2008-10-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Hole Mobility Enhancement by [110] Uniaxial Compressive Strain in (110) Oriented Ultra-Thin Body pFETs with SOI Thickness of Less Than 4nm2008
- Author(s)
  Ken Shimizu, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  米国ハワイ
- Year and Date
  2008-06-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nanoelectronics2008
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  MRS International Material Research Conference
- Place of Presentation
  中国
- Year and Date
  2008-06-11
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Hole Mobility Enhancement by [110] Uniaxial Compressive Strain in (110) Oriented Ultra-Thin Body pFETs with SOI Thickness of Less Than 4 nm2008
- Author(s)
  Ken Shimizu, Toshiro Hiramoto
- Organizer
  IEEE Silicon NanoelectronicsWorkshop, SI 135.
- Place of Presentation
  Hilton Hawaiian Village, HI, USA
- Year and Date
  2008-06-15
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Advanced Ultra-Thin-Body SOI and Silicon Nanowire MOSFETs2008
- Author(s)
  Toshiro Hiramoto, Gen Tsutsui, Masaharu Kobayashi, Ken Shimizu
- Organizer
  International Symposium on Secure-Life Electronics -Advanced Electronics for Quality Life and Society- (pp. 539 - 544)
- Place of Presentation
  University of Tokyo
- Year and Date
  2008-03-07
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Electron Mobility in Multiple Silicon Nanowires GAA nMOSFETs on (110) and (100) SOI at Room and Low Temperature2008
- Author(s)
  Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM) (pp. 757 - 760)
- Place of Presentation
  San Francisco, CA, USA
- Year and Date
  2008-12-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of Atomic Oxide Roughness and Local Gate Depletion on Vth Variation in MOSFETs2008
- Author(s)
  A.T.Putra, T.Tsunomura, A.Nishida , S.Kamohara, K.Takeuchi, T.Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop, S1205
- Place of Presentation
  Hilton Hawaiian Village, HI, USA
- Year and Date
  2008-06-15
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Electron Mobility in Multiple Silicon Nanowires GAA nMOSFETs on (110) and (100) SOI at Room and Low Temperature2008
- Author(s)
  Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2008-12-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility and Variability in Silicon Nanowire MOSFETs2008
- Author(s)
  Toshiro Hiramoto, Masaharu Kobayashi, Jiezhi Chen (Invited)
- Organizer
  14th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2008) (p. 192)
- Place of Presentation
  Korea, Ramada Plaza Jeju Hotel. Jeju
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study of Mobility in [110]- and[100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI2008
- Author(s)
  Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Ken Shimizu, Toshiro Hiramoto
- Organizer
  Symposium on VLSI Technology
- Place of Presentation
  米国ハワイ
- Year and Date
  2008-06-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Nanowire Channel Nanocrystal Memory with P-Doped Silicon Nanocrystals2008
- Author(s)
  Toshiro Hiramoto, Yuji Takahashi, Kousuke Miyaji, Takuya Saraya
- Organizer
  IEEE Nanotechnology Materials and Devices Conference (p. 57)
- Place of Presentation
  Kyoto University
- Year and Date
  2008-10-20
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Uniaxial Strain Effects on Silicon Nanowire pMOSFET and Single-Hole Transistor at Room Temperature2008
- Author(s)
  Yeon Joo Jeong, Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2008-12-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Characterization of CMOS Variability Utilizing 1M-DMA and Takeuchi Plot2008
- Author(s)
  T.Hiramoto
- Organizer
  Workshop on Test Structure Design for Variability Characterization
- Place of Presentation
  DoulbleTree Hotel, San Jose, CA, USA
- Year and Date
  2008-11-13
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Measuring and Understanding Device Variability2008
- Author(s)
  T.Hiramoto
- Organizer
  ESSDER/ ESSIRC Variability Workshop
- Place of Presentation
  Edinburgh International Conference Centre, Edinburgh, UK
- Year and Date
  2008-09-19
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Experimental Investigation on the Origin of Direction Dependence of Si (110) Hole Mobility Utilizing Ultra-Thin Body pMOSFETs2008
- Author(s)
  Ken Shimizu, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM) (pp. 67 - 70)
- Place of Presentation
  San Francisco. CA, USA
- Year and Date
  2008-12-15
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of Fixed Charge at MOSFETs' SiO2/Si Interface on Vth Variation2008
- Author(s)
  A.T.Putra, T.Tsunomura, A.Nishida, S.Kamohara, K.Takeuchi, T.Hiramoto
- Organizer
  International Conference on Simulation of Semiconductor Devices and Processes (SISPAD)
- Place of Presentation
  Hakone Prince Hotel, Kanagawa, Japan
- Year and Date
  2008-09-09
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain2008
- Author(s)
  Yeon Joo Jeong, Kousuke Miyaji, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  米国ハワイ
- Year and Date
  2008-06-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Investigation on the Origin of Direction Dependence of Si (110) Hole Mobility Utilizing Ultra-Thin Body pMOSFETs2008
- Author(s)
  Ken Shimizu, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2008-12-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study of Mobility in [110]- and [100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI2008
- Author(s)
  Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Ken Shimizu, Toshiro Hiramoto
- Organizer
  Symposium on VLSI Technology (pp. 32 - 33)
- Place of Presentation
  Hilton Hawaiian Village. HI. USA
- Year and Date
  2008-06-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain2008
- Author(s)
  Yeon Joo Jeong, Kousuke Miyaji, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop, M0930
- Place of Presentation
  Hilton Hawaiian Village. HI, USA
- Year and Date
  2008-06-16
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility and Variability in Silicon Nanowire MOSFETs2008
- Author(s)
  T.Hiramoto, M.Kobayashi, J.Chen
- Organizer
  14th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2008), p.192
- Place of Presentation
  Korea, Ramada Plaza Jeju Hotel, Jeju
- Year and Date
  2008-08-27
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Silicon Nanoelectronics2008
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  MRS International Material Research Conference, Symposium D: Electronic Materials (p. 140)
- Place of Presentation
  Chongqing International Convention & Exhibition Center, Chongqing, China
- Year and Date
  2008-06-11
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Uniaxial Strain Effects on Silicon Nanowire pMOSFET and Single-Hole Transistor at Room Temperature2008
- Author(s)
  YeonJoo Jeong, Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM) (pp. 761 - 764)
- Place of Presentation
  San Francisco, CA. USA
- Year and Date
  2008-12-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Advanced Ultra-Thin-Body SOI and Silicon Nanowire MOSFETs2008
- Author(s)
  Toshiro Hiramoto, Gen Tsutsui, Masaharu Kobayashi, Ken Shimizu
- Organizer
  Interntional Symposium on Secure-Life Electronics -Advanced Electronics for Quality Life and Society-
- Place of Presentation
  東京
- Year and Date
  2008-03-07
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Evolutionary Trend of Silicon Nanoelectronics and Beyond CMOS Devices2008
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  Dry Process Symposium (DPS 2008)
- Place of Presentation
  東京
- Year and Date
  2008-11-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility and variability in Silicon Nanowire MOSFETs2008
- Author(s)
  Toshiro Hiramoto, Masaharu Kobayashi, Jiezhi Chen (Invited)
- Organizer
  14th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2008)
- Place of Presentation
  韓国
- Year and Date
  2008-08-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor2007
- Author(s)
  S. Lee, K. Miyaji, M. Kobayashi, T. Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop
- Place of Presentation
  東京
- Year and Date
  2007-06-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Single-Electron Transistor operating at Room Temperature2007
- Author(s)
  Toshiro, Hiramoto
- Organizer
  The 1st NNL-IIS Workshop on Nanotechnology, Institute of Industrial Science
- Place of Presentation
  東京
- Year and Date
  2007-05-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of Local Poly-Si Gate Depletion on Vth Variation in Nanoscale MOSFETs Investigated by 3D Device Simulation2007
- Author(s)
  A.T.Putra, A.Nishida, S.Kamohara, T.Tsunomura, T.Hiramoto
- Organizer
  International Semiconductor Device Research Symposium (ISDRS), WP8-03
- Place of Presentation
  University of Maryland, MD, USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Robust Design of Transistors : Present Status and Measures to Characteristic Variations2007
- Author(s)
  T.Hiramoto
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2007), pp.5-8
- Place of Presentation
  Commodore Hotel Gyeongju Chosun, Korea
- Year and Date
  2007-06-25
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Nanoscale Silicon Devices Using Nanostructure Physics for VLSI Applications2007
- Author(s)
  Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi (Invited)
- Organizer
  Fifth Hiroshima International Workshop on Nanoelectronics for Tera-Bit Information Processing
- Place of Presentation
  東京
- Year and Date
  2007-01-29
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Characteristics Variation in Silicon Nanowire Transistors2007
- Author(s)
  Toshiro Hiramoto, Masanaru Kobayashi
- Organizer
  3rd International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  Brussels. Belgium
- Year and Date
  2007-04-17
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Transport in Silicon Nanowire and Single-Electron Transistor2007
- Author(s)
  Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi (Invited)
- Organizer
  International Conference on Simulation of Semiconductor Devices and Processes (SISPAD) (pp. 209-215)
- Place of Presentation
  Vienna University of Technology, Vienna, Austria
- Year and Date
  2007-09-27
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Characteristics Variation in Silicon Nanowire Transistors2007
- Author(s)
  Toshiro, Hiramoto, Masanaru Kobayashi
- Organizer
  3rd International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  ベルギー
- Year and Date
  2007-04-17
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Transport in Ultra-Thin-Body SOI and Silicon Nanowire MOSFETs2007
- Author(s)
  Toshiro Hiramoto, Gen Tsutsui, Ken Shimizu, Masaharu Kobayashi (Invited)
- Organizer
  International Semiconductor Device Research Symposium (ISDRS)
- Place of Presentation
  米国メリーランド
- Year and Date
  2007-12-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultra-Thin Body nMOSFETs with SOI Thickness of Less Than 2 nm2007
- Author(s)
  Ken Shimizu, Toshiro Hiramoto
- Organizer
  IEEE International SOI Conference, Miramonte Resort & Spa (pp. 145 - 146)
- Place of Presentation
  Indian Wells, CA, USA
- Year and Date
  2007-10-04
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement in Uniaxially Strained (110) oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of less than 4 nm2007
- Author(s)
  Ken Shimizu, Toshiro Hiramoto
- Organizer
  International Electron Devices Meeting (IEDM) (pp. 715 - 718)
- Place of Presentation
  Washington Hilton, Washington D. C, USA
- Year and Date
  2007-12-12
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] FinFETs with Both Large Body Factor and High Drive-Current2007
- Author(s)
  K.Takahashi, A.T.Putra, T.Hiramoto
- Organizer
  International Semiconductor Device Research Symposium (ISDRS), WP9-01-11
- Place of Presentation
  University of Maryland, MD, USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Silicon Single-Electron Transistor Operating at Room Temperature2007
- Author(s)
  Toshiro Hiramoto
- Organizer
  The 1st NNL-IIS Workshop on Nanotechnology (p. 10)
- Place of Presentation
  Institute of Industrial Science, University of Tokyo
- Year and Date
  2007-05-16
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement in Uniaxially Strained (110) oriented Ultra-Thin Body Single- and Double-Gate MOSFETs with SOI Thickness of less than 4 nm2007
- Author(s)
  Ken Shimizu, Toshiro Hiramoto
- Organizer
  International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国ワシントンDC
- Year and Date
  2007-12-12
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Transport in Silicon Nanowire and Single-Electron Transistor2007
- Author(s)
  Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi (invited)
- Organizer
  International Conference on Simulation of Semiconductor Devices and Processes (SISPAD)
- Place of Presentation
  オーストリア
- Year and Date
  2007-09-27
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors2007
- Author(s)
  T. Hiramoto (Invited)
- Organizer
  The Electrochemical Society (ECS) Fall Meeting, Symposium on ULSI Integration 5
- Place of Presentation
  Washington Hilton. Washington D. C, USA
- Year and Date
  2007-10-11
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Body Factor and Leakage Current Reduction in Bulk FinFETs2007
- Author(s)
  K.Takahashi, T.Ohtou, A.T.Putra, K.Shimizu, T.Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop, pp.95-97
- Place of Presentation
  Rihga Royal Hotel Kyoto
- Year and Date
  2007-06-10
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Silicon VLSI Device Technology and Nanoe 1 ectron i cs2007
- Author(s)
  Toshiro Hiramoto (Plenary)
- Organizer
  20th International Microprocesses and Nanotechnology Conference (MNC) (p. 6 - 7)
- Place of Presentation
  Kyoto International Conference Center
- Year and Date
  2007-11-06
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Degradation 'in (HO)-Oriented Ultra-thin Body Double-Gate pMOSFETs with SOI Thickness of less than 5nm2007
- Author(s)
  Ken Shimizu, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) (pp. 732-733)
- Place of Presentation
  Tsukuba International Congress Center
- Year and Date
  2007-09-20
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Transport in Ultra-Thin-Body SOI and Silicon Nanowire MOSFRTs (TA6-02)2007
- Author(s)
  Toshiro Hiramoto, Gen Tsutsui, Ken Shimizu, Masaharu Kobayashi (Invited)
- Organizer
  International Semiconductor Device Research Symposium (ISDRS)
- Place of Presentation
  University of Maryland. College Park, MD, USA
- Year and Date
  2007-12-13
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Degradation in (110)-Oriented Ultra-thin Body Double-Gate pMOSFETs with SOI Thickness of less than 5nm2007
- Author(s)
  Ken Shimizu, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-20
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor2007
- Author(s)
  S. Lee, K. Miyaji, M. Kobayashi, T. Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop
- Place of Presentation
  京都
- Year and Date
  2007-06-10
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Nanoscale Silicon Devices Using Nanostructure Physics for VLSI Applications2007
- Author(s)
  Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi (Invited)
- Organizer
  Fifth Hiroshima International Workshop on Nanoelectronics for Tera-Bit Information Processing (pp. 32 - 35)
- Place of Presentation
  Campus Innovation Center (Tokyo)
- Year and Date
  2007-01-29
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultra-Thin Body nMOSFETs with SOI Thickness of Less Than 2 nm2007
- Author(s)
  Ken Shimizu, Toshiro Hiramoto
- Organizer
  IEEE International SOI Conference
- Place of Presentation
  米国インディアンウェルズ
- Year and Date
  2007-10-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Random Vth Variation Induced by Gate Edge Fluctuations in Nanoscale MOSFETs2007
- Author(s)
  A.T.Putra, A.Nishida, S.Kamohara, T.Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop, pp.73-74
- Place of Presentation
  Rihga Royal Hotel Kyoto
- Year and Date
  2007-06-10
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Silicon VLSI Device Technology and Nanoelectronics2007
- Author(s)
  Toshiro Hiramoto (Plenary)
- Organizer
  20th International Microprocesses and Nanotechnology Conference (MNC)
- Place of Presentation
  京都
- Year and Date
  2007-11-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor2007
- Author(s)
  S. Lee, K. Miyaji, M. Kobayashi, T. Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop (pp. 115 - 116)
- Place of Presentation
  Rihga Royal Hotel Kyoto
- Year and Date
  2007-06-10
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Transport in Ultrathin SOI MOSFETs and Silicon Nanowire Transistors2007
- Author(s)
  T. Hiramoto (Invited)
- Organizer
  The Electrochemical Society (ECS) Fall Meeting
- Place of Presentation
  米国ワシントンDC
- Year and Date
  2007-10-11
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Characteristics Variation in Silicon Nanowire Transistors2007
- Author(s)
  T.Hiramoto, M.Kobayashi
- Organizer
  3rd International Nanotechnology Conference on Communication and Cooperation
- Place of Presentation
  Brussels, Bergium
- Year and Date
  2007-04-17
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor2006
- Author(s)
  Kousuke Miyaji, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) (pp. 836 - 837)
- Place of Presentation
  Pacificko Yokohama
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor2006
- Author(s)
  Masaharu, Kobayashi, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2006-12-11
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement in (110)-Oriented Ulta-Thin-Body Single-Gate and Double-Gate SOI MOSFETs2006
- Author(s)
  T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya
- Organizer
  International Workshop on Nano CMOS
- Place of Presentation
  静岡
- Year and Date
  2006-01-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs2006
- Author(s)
  K. Shimizu, G. Tsutsui, D. Januar. T. Saraya, T. Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop (pp. 11-12)
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Demonstrations of Superior Characteristics of Variable Body-Factor (γ) Fully-Depleted SOI MOSFETs with Extremely Thin BOX of 10nm2006
- Author(s)
  T.Ohtou, T.Saraya, K.Shimokawa, Y.Doumae, Y.Nagatomo, J.Ida, T.Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM), pp.877-880
- Place of Presentation
  San Francisco, CA, USA
- Year and Date
  2006-12-13
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Integrated single-electron transistor circuits on SOI basis2006
- Author(s)
  Toshiro, Hiramoto, (Invited)
- Organizer
  NATO Advanced Research Workshop "Nanoscaled Semiconductor-on-Insulator Structures and Devices"
- Place of Presentation
  ウクライナ
- Year and Date
  2006-10-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement in (110)-Oriented Ulta-Thin-Body Single-Gate and Double-Gate SOI MOSFETs2006
- Author(s)
  T. Hiramoto, G. Tsutsui, M. Saitoh, T. Nagumo, T. Saraya
- Organizer
  International Workshop on Nano CMOS (pp. 14-15)
- Place of Presentation
  Toray Sougou Kensyu Center, Mishima, Shizuoka
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors2006
- Author(s)
  Masaharu Kobayashi, Kousuke Miyaii, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  横浜
- Year and Date
  2006-09-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Multi-Gate MOSFETs with Back-Gate Control2006
- Author(s)
  T.Hiramoto, T.Nagumo
- Organizer
  2006 International Conference on Integrated Circuit Design and Technology (ICICDT), pp.80-81
- Place of Presentation
  Padova University, Padova, Italy
- Year and Date
  2006-05-25
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Critical Substrate Bias in Variable-Threshold Voltage CMOS with Short Channel FD SOI MOSFETs2006
- Author(s)
  A.T.Putra, T.Ohtou, T.Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop, pp.159-160
- Place of Presentation
  Honolulu, HI, USA
- Year and Date
  2006-06-12
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor2006
- Author(s)
  Masaharu Kobayashi, Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM) (pp. 1007 - 1009)
- Place of Presentation
  San Francisco. CA, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor2006
- Author(s)
  M.Kobayashi, T.Hiramoto
- Organizer
  Technical Digests of IEEE International Electron Devices Meeting (IEDM), pp.1007-1009
- Place of Presentation
  San Francisco, CA, USA
- Year and Date
  2006-12-11
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Integrated single-electron transistor circuits on SOI basis2006
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  NATO Advanced Research Workshop "Nanoscaled Semiconductor-on-Insulator Structures and Devices" (pp. 93 - 94)
- Place of Presentation
  Sudak, Crimea, Ukraine
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study on Breakdown of Mobility Universality in <100>-Directed (110)-Oriented pMOSFETs2006
- Author(s)
  K. Shimizu, G. Tsutsui, D. Januar, T. Saraya, T. Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  米国ホノルル
- Year and Date
  2006-06-11
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors2006
- Author(s)
  Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) (pp. 806 - 807)
- Place of Presentation
  Pacificko Yokohama
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of Parameter Variations and Random Dopant Fluctuations on Short-Channel Fully-Depleted SOI MOSFETs with Extremely Thin BOX2006
- Author(s)
  T.Ohtou, N.Sugii, T.Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop, pp.15-16
- Place of Presentation
  Honolulu, HI, USA
- Year and Date
  2006-06-11
- Data Source
  KAKENHI-PROJECT-18063006
[Presentation] Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm"2006
- Author(s)
  Ken Shimizu, Gen Tsutsui, Toshiro Hiramoto
- Organizer
  2006 IEEE International SOI Conference
- Place of Presentation
  米国ニューヨーク
- Year and Date
  2006-10-05
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Room-temperature operating Silicon Single-Electron/Hole Transistors and Their Modeling2006
- Author(s)
  Toshiro Hiramoto, Masumi Saitoh, Kousuke Miyaji, Masaharu Kobayashi (Invited)
- Organizer
  IEEE Conference on Emerging Technologies -Nanoelectronics (NanoSingapore 2006)
- Place of Presentation
  シンガポール
- Year and Date
  2006-01-11
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Experimental Study on Mobility Universality in (100) Ultra Thin Body nMOSFET with SOI Thickness of 5nm2006
- Author(s)
  Ken Shimizu, Gen Tsutsui, Toshiro Hiramoto
- Organizer
  2006 IEEE International SOI Conference (pp. 159-160)
- Place of Presentation
  Niagara Falls, NY, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Room-temperature Operating Silicon Single-Electron/Hole Transistors and Their Modeling2006
- Author(s)
  Toshiro Hiramoto, Masumi Saitoh, Kousuke Miyaji, Masaharu Kobayashi (Invited)
- Organizer
  IEEE Conference on Emerging Technologies - Nanoelectronics (NanoSingapore 2006) (pp. 324 - 326)
- Place of Presentation
  Meritus Mandarin Singapore, Singapore
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor2006
- Author(s)
  Kousuke, Miyaji, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  横浜
- Year and Date
  2006-09-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor (TP3-O3)2005
- Author(s)
  Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  International Semiconductor Device Research Symposium
- Place of Presentation
  Bethesda. MD. USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Emerging Devices for Post-Classical CMOS - from Memory, Logic to Architectures2005
- Author(s)
  T. Hiramoto (Plenary)
- Organizer
  2005 International Symposium on VLSI Technology (VLSI-TSA-TECH)
- Place of Presentation
  台湾
- Year and Date
  2005-04-25
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor2005
- Author(s)
  Masaharu Kobayashi, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  神戸
- Year and Date
  2005-09-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2005
- Author(s)
  Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop
- Place of Presentation
  京都
- Year and Date
  2005-06-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Superior Mobility Characteristics in (110)-Oriented Ultra Thin Body pMOSFETs with SOI Thickness less than 6 nm2005
- Author(s)
  Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  Symposium on VLSI Technology
- Place of Presentation
  京都
- Year and Date
  2005-06-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Circuit Applications of Room-Temperature Operating Silicon Single Electron/Hole Transistors2005
- Author(s)
  T. Hiramoto
- Organizer
  JSPS-AF Nano Science and Nano Technology Workshop
- Place of Presentation
  JSPS Head Office, Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Non-Classical and Nanoscale Silicon Devices for Future VLSI Applications2005
- Author(s)
  Toshiro Hiramoto, Masumi Saitoh, Gen Tsutsui, Toshiharu Nagumo, Tetsu Ohtou
- Organizer
  International Symposium on Advanced Electronics for Future Generations-"Secure-Li fe Electronics'" for Quality Life and Society - (pp. 87 - 91)
- Place of Presentation
  University of Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Emerging Devices for Post-Classical CMOS -from Memory, Logic to Architectures2005
- Author(s)
  T. Hiramoto (Plenary)
- Organizer
  2005 International Symposium on VLSI Technology (VLSI-TSA-TECH) (pp. 1 -4)
- Place of Presentation
  Ambassador Hotel, Hsinchu. Taiwan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nano Devices : Taking Full Advantage of Physics in Silicon Nanostructures2005
- Author(s)
  T. Hiramoto (Invited)
- Organizer
  First International Nanotechnology Conference on Communication and Cooperation (INC1)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2005-06-02
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain2005
- Author(s)
  Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  神戸
- Year and Date
  2005-09-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement due to Volume Inversion in (110)-oriented Ultra-thin Body Double-gate nMOSFETs with Body Thickness less than 5 nm2005
- Author(s)
  Gen Tsutsui, Masumi Saitoh, Takuya Saraya, Toshiharu Nagumo, Toshiro Hiramoto
- Organizer
  International Electron Devices Meeting (IEDM)
- Place of Presentation
  米国ワシントン
- Year and Date
  2005-12-07
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nano Devices: Taking Full Advantage of Physics in Silicon Nanostructures2005
- Author(s)
  T. Hiramoto (Invited)
- Organizer
  First International Nanotechnology Conference on Communication and Cooperation (INC1)
- Place of Presentation
  Marriott Hotel, San Francisco, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor2005
- Author(s)
  Masaharu Kobayashi, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) (pp. 164 - 165)
- Place of Presentation
  International Conference Center Kobe, Hyogo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Circuit Applications of Silicon Single Hole Transistors Operating at Room Temperature2005
- Author(s)
  T. Hiramoto, M. Saitoh
- Organizer
  International Symposium on Quantum Dots and Photonic Crystals, (ISQDPC) (p. 10)
- Place of Presentation
  Toranomon Pastoral. Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor2005
- Author(s)
  Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  International Semiconductor Device Research Symposium
- Place of Presentation
  米国ベセスダ
- Year and Date
  2005-12-08
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2005
- Author(s)
  Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop (pp. 82 - 83)
- Place of Presentation
  Rihga Royal Hotel Kyoto
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] FinFETType Silicon Nanocrystal Memories with Ultranarrow Channel2005
- Author(s)
  Kosuke Yanagidaira, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop (pp. 100 - 101)
- Place of Presentation
  Rihga Royal Hotel Kyoto
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Circuit Applications of Room-Temperature Operating Silicon Single Electron/Hole Transistors2005
- Author(s)
  T. Hiramoto
- Organizer
  2005 Sweden - Japan International Workshopon Quantum Nano-Physics and Electronics (p. 22)
- Place of Presentation
  Campus Plaza, Kyoto
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nanocrystal Memories and Single Electron Transistors2005
- Author(s)
  T. Hiramoto (Invited)
- Organizer
  Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4) (pp. 24 - 25)
- Place of Presentation
  Awaji Island. Hyogo. Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Circuit Applications of Silicon Single Hole Transistors Operating at Room Temperature2005
- Author(s)
  T. Hiramoto, M. Saitoh
- Organizer
  International Symposium on Quantum Dots and Photonic Crystals, (ISQDPC)
- Place of Presentation
  東京
- Year and Date
  2005-03-07
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] FinFET-Type Silicon Nanocrystal Memories with Ultranarrow Channel2005
- Author(s)
  Kosuke Yanagidaira, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop
- Place of Presentation
  京都
- Year and Date
  2005-06-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Circuit Applications of Room-Temperature Operating Silicon Single Electron/Hole Transistors2005
- Author(s)
  T. Hiramoto
- Organizer
  JSPS-AF Nano Science and Nano Technology Workshop
- Place of Presentation
  東京
- Year and Date
  2005-05-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Superior Mobility Characteristics in (110)-Oriented Ultra Thin Body pMOSFETs with SOI Thickness less than 6nm2005
- Author(s)
  Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  Symposium on VLSI Technology (pp. 76 - 77)
- Place of Presentation
  Rihga Royal Hotel Kyoto
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement2005
- Author(s)
  Doni Januar, Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  神戸
- Year and Date
  2005-09-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Enhancement due to Volume Inversion in (110)-oriented Ultra-thin Body Double-gate nMOSFETs with Body Thickness less than 5 nm2005
- Author(s)
  Gen Tsutsui, Masumi Saitoh, Takuya Saraya, Toshiharu Nagumo, Toshiro Hiramoto
- Organizer
  International Electron Devices Meeting (1EDM) (pp. 747-750)
- Place of Presentation
  Washington D. C., USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nanocrystal Memories and Single Electron Transistors2005
- Author(s)
  T. Hiramoto (Invited)
- Organizer
  Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4)
- Place of Presentation
  淡路島
- Year and Date
  2005-05-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement2005
- Author(s)
  Doni Januar, Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) (pp. 264 - 265)
- Place of Presentation
  International Conference Center Kobe, Hyogo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nano Devices -Nano-CMOS and Single-Electron Transistors-2005
- Author(s)
  Toshiro Hiramoto
- Organizer
  International Symposium on Quantum Dots and Nanoelectronics
- Place of Presentation
  東京
- Year and Date
  2005-11-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Circuit Applications of Room-Temperature Operating Silicon Single Electron/Hole Transistors2005
- Author(s)
  Toshiro Hiramoto
- Organizer
  2005 Sweden-Japan International Workshop on Quantum Nano-Physics and Electronics
- Place of Presentation
  京都
- Year and Date
  2005-04-08
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Non-Classical and Nanoscale Silicon Devices for Future VLSI Applications2005
- Author(s)
  Toshiro Hiramoto, Masumi Saitoh, Gen Tsutsui, Toshiharu Nagumo, Tetsu Ohtou
- Organizer
  International Symposium on Advanced Electronics for Future Generations-"Secure-Life Electronics"for Quality Life and Society-
- Place of Presentation
  東京
- Year and Date
  2005-10-12
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels (WP7-07-06)2005
- Author(s)
  Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou., Toshiro Hiramoto
- Organizer
  International Semiconductor Device Research Symposium
- Place of Presentation
  Bethesda, MD. USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Nano Devices -Nano-CMOS and Single-Electron Transistors-2005
- Author(s)
  Toshiro Hiramoto
- Organizer
  International Symposium on Quantum Dots and Nanoelectronics
- Place of Presentation
  Tokyo Garden Palace, Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels2005
- Author(s)
  Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou, Toshiro Hiramoto
- Organizer
  International Semiconductor Device Research Symposium
- Place of Presentation
  米国ベセスダ
- Year and Date
  2005-12-08
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain2005
- Author(s)
  Kousuke Miyaji, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) (pp. 166 - 167)
- Place of Presentation
  International Conference Center Kobe, Hyogo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Room-Temperature Demonstration of Integrated Silicon Single-Electron Transistor Circuits for Current Switching and Analog Pattern Matching2004
- Author(s)
  Masumi Saitoh, Hidehiro Harata, Toshiro Hiramoto
- Organizer
  IEEE Electron Devices Meeting (IEDM)
- Place of Presentation
  米国サンフランシスコ
- Year and Date
  2004-12-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Circuit Applications of Silicon Single-Electron Transistors Operating at Room Temperature2004
- Author(s)
  T. Hiramoto, M. Saitoh, H. Harata, T. Sakurai
- Organizer
  Frontiers in Nanoscale Science and Technology
- Place of Presentation
  米国ボストン
- Year and Date
  2004-10-25
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Circuit Applications of Silicon Single-Electron Transistors Operating at Room Temperature2004
- Author(s)
  T. Hiramoto, M. Saitoh, H. Harata, T. Sakurai
- Organizer
  Frontiers in Nanoscale Science and Technology
- Place of Presentation
  Harvard University, Boston, MA, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Performance Improvements in Silicon Nanocrystal Memories with Ultra-Thin-Body Double-Gate Structure2004
- Author(s)
  Kousuke Yanagidaira, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  米国ホノルル
- Year and Date
  2004-06-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs2004
- Author(s)
  K. Miyaji, M. Saitoh, T. Nagumo, T. Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (pp. 236 - 237)
- Place of Presentation
  Tower Hall Funabori, Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation2004
- Author(s)
  S. Park, H. Im, I. Kim, T. Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (pp. 610 - 611)
- Place of Presentation
  Tower Hall Funabori, Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories2004
- Author(s)
  K. Yanagidaira, M. Saitoh, T. Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (pp. 130 - 131)
- Place of Presentation
  Tower Hall Funabori, Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra Thin Body SOI MOSFETs2004
- Author(s)
  Gen Tsutsui, Masumi Saitoh, Toshiharu Nagumo, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  米国ホノルル
- Year and Date
  2004-06-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature2004
- Author(s)
  Hidehiro Harata, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop (pp. 81- 82)
- Place of Presentation
  Hilton Hawaiian Village. Honolulu, HI, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Room Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors2004
- Author(s)
  M. Saitoh, H. Harata, T. Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials (pp. 124 - 125)
- Place of Presentation
  Tower Hall Funabori, Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] High Functionality in Room-Temperature Operating Single-Electron Transistors and Silicon Nanocrystal Memories2004
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2004) (p. 15)
- Place of Presentation
  The University of Queensland, Brisbane, Australia
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Silicon Single-Hole Transistor with Large Coulomb Blockade Oscillations and High Voltage Gain at Room Temperature2004
- Author(s)
  Hidehiro Harata, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  米国ホノルル
- Year and Date
  2004-06-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Si Nanoelectronics - Single-Electron Transistors and Other Nano Devices -2004
- Author(s)
  T. Hiramoto
- Organizer
  International Symposium on Frontier of Nanometer Electronics and Optoelectronics
- Place of Presentation
  National Chiao Tung University, Taiwan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Si Nanoelectronics - Single-Electron Transistors and Other Nano Devices-2004
- Author(s)
  T. Hiramoto
- Organizer
  International Symposium on Frontier of Nanometer Electronics and Optoelectronics
- Place of Presentation
  台湾
- Year and Date
  2004-12-03
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Room Temperature Demonstration of Low-Voltage Static Memory Based on Negative Differential Conductance in Silicon Single-Hole Transistors2004
- Author(s)
  M. Saitoh, H. Harata, T. Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Year and Date
  2004-09-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Integration and Performance Improvements of Silicon Nanocrystal Memories2004
- Author(s)
  T. Hiramoto, I. Kim, M. Saitoh, K. Yanagidaira (Invited)
- Organizer
  Material Research Symposium
- Place of Presentation
  米国ボストン
- Year and Date
  2004-11-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] High Functionality in Room-Temperature Operating Single-Electron Transistors and Silicon Nanocrystal Memories2004
- Author(s)
  Toshiro Hiramoto (Invited)
- Organizer
  Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD2004)
- Place of Presentation
  オーストラリア
- Year and Date
  2004-12-08
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Performance Improvements in Silicon Nanocrystal Memories with Ultra-Thin-Body Double-Gate Structure2004
- Author(s)
  Kousuke Yanagidaira, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  (pp. 141-142)
- Place of Presentation
  Hilton Hawaiian Village. Honolulu. HI. USA.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra Thin Body SOI MOSFETs2004
- Author(s)
  Gen Tsutsui, Masumi Saitoh, Toshiharu Nagumo, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop (pp. 25 - 26)
- Place of Presentation
  Hilton Hawaiian Village, Honolulu. HI, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Large Threshold Voltage Shift and Narrow Threshold Voltage Distribution in Ultra Thin Body Silicon Nanocrystal Memories2004
- Author(s)
  K. Yanagidaira, M. Saitoh, T. Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Year and Date
  2004-09-15
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Integration and Performance Improvements of Silicon Nanocrystal Memories2004
- Author(s)
  T. Hiramoto, I. Kim, M. Saitoh, K. Yanagidaira (Invited)
- Organizer
  Symposium D "Materials and Processes for Nonvolatile Memories", Material Research Symposium ( p. 81)
- Place of Presentation
  Hynes Convention Center and Sheraton Boston Hotel, MA, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Impact of Drain Induced Barrier Lowering on Read Scheme in Silicon Nanocrystal Memory with Two-Bit-per-Cell Operation2004
- Author(s)
  S. Park, H. Im, I. Kim, T. Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Year and Date
  2004-09-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Channel Width and Length Dependence in Si Nano-Crystal Memories with Ultra Nano-Scale Channel2004
- Author(s)
  Julien Brault, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop (pp. 103 - 104)
- Place of Presentation
  Hilton Hawaiian Village. Honolulu, HI, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs2004
- Author(s)
  K. Miyaji, M. Saitoh, T. Nagumo, T. Hiramoto
- Organizer
  International Conference on Solid State Devices and Materials
- Place of Presentation
  東京
- Year and Date
  2004-09-16
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Channel Width and Length Dependence in Si Nano-Crystal Memories with Ultra Nano-Scale Channel2004
- Author(s)
  Julien Brault, Masumi Saitoh, Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  米国ホノルル
- Year and Date
  2004-06-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16201029
[Presentation] Room-Temperature Demonstration of Integrated Silicon Single-Electron Transistor Circuits for Current Switching and Analog Pattern Matching2004
- Author(s)
  Masumi Saitoh, Hidehiro Harata, Toshiro Hiramoto
- Organizer
  IEEE Electron Devices Meeting (IEDM) (pp. 187 - 190)
- Place of Presentation
  San Francisco, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16201029

1. SARAYA Takuya (90334367)

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2. HIRAKAWA Kazuhiko (10183097)

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3. FUJITA Hiroyuki (90134642)

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4. SAKURAI Takayasu (90282590)

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5. SASAKI Hiryoyuki (90013226)

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6. SAITO Toshio (90170513)

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7. Masaharu Kobayashi (40740147)

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8. ARAKAWA Yasuhiko (30134638)

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9. ANDO Tsuneya (90011725)

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10. TAKAGI Shinichi (30372402)

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11. MASU Kazuya (20157192)

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12. MIYAZAKI Seiichi (70190759)

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13. FUJISHIMA Minoru (60251352)

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14. IKEDA Takahide

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16. HORI Masaru (80242824)

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17. TABATA Hitoshi (00263319)

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18. MIURA Noboru (70010949)

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20. MASUZAWA Takahisa (60013215)

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21. HASHIMOTO Hideki (30183908)

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24. TOSHIYOSHI Hiroshi (50282603)

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25. HOH Koichiro (60211538)

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26. SHIBATA Tadashi (00187402)

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31. ファーソル G (10251472)

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35. 大野圭司 (00302802)

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36. PORTE Henri

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37. DUCROQUET Frederique

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38. PLANA Robert

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39. CAMON Henri

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40. MOLLIER Pasca

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41. MINOTTI Partrice

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42. GORECKI Christophe

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43. PIERALLI Christian

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44. HAESE Nahtalie

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45. ROLLAND Paul-Alain

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46. HOUDEN Daniel

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47. 生駒俊明

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48. THORNTON T.J

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49. JOYCE B.A.

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50. JOYCE B.A

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51. GREEN M

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52. STRADLING R.

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53. EAVES L

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54. BARKER J.R

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55. AHMED H

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56. DECARPIGNY J

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57. GAGNEPAIN Je

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58. DECARPIGNY Jean-Noel

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59. GAGNEPAIN Jean-Jaeques

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60. HAUDEN Danie

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61. JEANーJAEQUES ガニュパン

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Hiramoto Toshiro 平本 俊郎

HIRAMOTO Toshiro 平本 俊郎

Research Projects

Research Products

Co-Researchers

Generation and extraction of device fingerprints (quantum fingerprints) based on physics of spin qubits

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Scalable Silicon Quantum Dots with Stacked Layered Structures for 3D IntegrationPrincipal Investigator

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Self-Convergence Mechanism of Transistor Characteristics Variability for 0.1V OperationPrincipal Investigator

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Research and development of ultralow power circuit built by steep subthreshold slope FET and embedded FeRAM based on ferroelectric HfO2 thin film

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Ultra-Low Voltage Operating Silicon Nanowire Transistors with Threshold Voltage Self-Adjusting MechanismPrincipal Investigator

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Low voltage operation of new functional circuits by a silicon single electron transistor and CMOS at room temperaturePrincipal Investigator

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Basic research on influence of single impurity atom on statistics of nanoscale transistor characteristicsPrincipal Investigator

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Basic research on ultra-low voltage MOS transistors aiming at sub-100mV operationPrincipal Investigator

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Creation of New Functionalities by Integration of Room-Temperature Operating Single Electron Transistors and Large-Scale CMOS CircuitsPrincipal Investigator

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Nano MOSFET Fluctuations and Device IntegrityPrincipal Investigator

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Technology Evolution for Silicon Nano-Electronics

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A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperaturePrincipal Investigator

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高・強誘電体膜を用いた極低電圧・超低消費電力FET,及び高性能新機能素子の開発Principal Investigator

Principal Investigator

Project Period (FY)

Hiramoto Toshiro 平本俊郎

HIRAMOTO Toshiro 平本俊郎