Miyazaki Seiichi 宮崎誠一

… Alternative Names

Seiichi Miyazaki 宮崎誠一

MIYAZAKI Seiichi 宮崎誠一

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Researcher Number	70190759
Other IDs
External Links
Affiliation (Current)	2025: 広島大学, 学術・社会連携室, 理事・副学長
Affiliation (based on the past Project Information) *help	2021 – 2023: 名古屋大学, 工学研究科, 教授 2016 – 2018: 名古屋大学, 工学研究科, 教授 2017: 名古屋大学, 大学院工学研究科, 教授 2012 – 2015: 名古屋大学, 工学(系)研究科(研究院), 教授 2010 – 2011: 名古屋大学, 工学研究科, 教授 … More 2003 – 2009: 広島大学, 大学院・先端物質科学研究科, 教授 2008: Hiroshima University, 大学院先端物質科学研究科, 教授 2007: Hiroshima University, 大学院・生端物質科学研究科, 教授 2006 – 2007: 広島大学, 先端物質科学研究科, 教授 2005 – 2006: HIROSHIMA UNIVERSITY, Graduate School of Advanced Sciences of Matter, Professor, 大学院先端物質科学研究科, 教授 1992 – 2000: 広島大学, 工学部, 助教授 1987 – 1991: 広島大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Medium-sized Section 21:Electrical and electronic engineering and related fields / Science and Engineering / 表面界面物性 Except Principal Investigator Electronic materials/Electric materials / 電子材料工学 / Thin film/Surface and interfacial physical properties / Electron device/Electronic equipment / Science and Engineering / Thin film/Surface and interfacial physical properties / 電子デバイス・機器工学
Keywords	Principal Investigator 量子ドット / スーパーアトム / Si量子ドット / Si系量子ドット / フローティングゲート / エレクトロルミネッセンス / 発光デバイス / スーパーアトム構造 / Feシリサイドナノドット / コア／シェル構造 … More / コア／シェル / 磁性ドット / LED / Quantum dots / 自己組織化 / Tunnel Current / Scanning Probe Microscope / Location Control / Low Pressure CVD / Quantum Dots / Quantum Effect / Silicon / 表面化学結合 / 選択成長 / 原子間力顕微鏡 / 自己組織化形成 / 量子構造 / トンネル電流 / 走査プローブ顕微鏡 / 位置制御 / 減圧CVD / 量子効果 / シリコン / Hydrogen Terminated Si Surface / Interface State Density / Photoelectron Escape Depth / Valence Band State Density / Surface States Density / Sur11face Fermi Level / Photoelectron Yield Spectroscopy / c-Si Interface / Ultrathin SiO_2 / 仕事関数 / 電子占有状態 / 極薄シリコン酸化膜 / 表面準位 / 界面準位 / 表面・界面欠陥 / 光電子収率分光 / ケルビンプローブ / 欠陥準位密度 / 水素終端Si処理 / 界面準位密度 / 光電子脱出深さ / 価電子帯状態密度 / 表面準位密度 / フェルミ準位 / 光電子収率分光法 / Si界面 / 極薄SiO_2 / 配列制御 / 発光ダイオード / Ge量子ドット / 縦積み連結 / LPCVD / 一次元連結 / 不揮発性メモリ / 量子サイズ効果 / 不揮発メモリ / メモリデバイス / ハイブリッド構造 / シリサイドナノドット / シリコン量子ドット / 光レスポンス / ハイブリッドドット / 金属ナノドット / フローティングゲートメモリ / ハイブリッドナノドット / ナノ結晶 / 非破壊分析 / 非結晶化 / 不純物イオン注入 / 水素結合 / ネットワーク形成 / アモルファスシリコン / 紫外線レーザラマン散乱 / 表面層高感度分析 … More Except Principal Investigator 表面反応 / FT-IR-ATR / シリコン量子ドット / 質量分析 / 吸着ラジカル / self-assembling / silicon quantum dot / LPCVD / 原子間力顕微鏡 / AFM / SiO_2 / MOSFET / スケーリング則 / シリコン / 室温動作 / 自己組織化形成 / デジタルエッチング / レーザ誘起光化学反応 / プラズマ / 多軌道タイトバインディング法 / IV族元素 / ナノリボン / スピン軌道相互作用 / タイトバインディング近似 / 物質合成 / 物質設計 / エッジ状態 / 理論 / 物質創製 / 第一原理計算 / 二次元物質 / スタネン / ゲルマネン / シリセン / Grow Discharge Plasma / Epitaxy / Radical Beam / ラマン散乱分光 / 反射高速電子線回析 / RHEED / EC放電 / 電子サイクロトロン共鳴 / グロー放電プラズマ / エピタキシャル成長 / ラジカルビーム / Transceiver / Interconnection / Radio communication / Interconnect / Wireless / Antenna / Silicon / 感光性 / 多孔質 / LSI / 低誘電率層間絶縁膜 / 送信回路 / 低誘電率膜 / 無線通信 / ガウシアンパルス / 送受信回路 / インターコネクト / 無線 / 配線 / ワイヤレス / アンテナ / Coulombic interaction / multilevel electron charging / room temperature operation / threshold voltage shift / floating gate MOS memory / memory effect / 低電圧書き込み / 保持電子数 / 保持電子間の相互作用 / 多段階電子注入 / 室温動作メモリ / しきい値電圧シフト / フローティングゲートMOSメモリ / メモリ効果 / luminessence at room temperature / atomic force microscopy / tunneling current / resonant tunneling / double barrier structure / 帯電 / 光電子スペクトル / 可視域発光 / フォトルミネッセンス / 室温量子効果 / 化学気相成長 / 室温発光 / トンネル電流 / 共鳴トンネル効果 / 二重障壁構造 / 自己組織化 / spectra simulation / plasma-induced damage / semiconductor detector / impurity profile / surface damage / time of flight measurement / ion implanter / medium energy ion scattering / アンチモンイオン注入 / コンタクトホール / アルゴンプラズマ / スペクトルシミュレーション / プラズマ損傷 / 半導体検出器 / 不純物分布 / 表面損傷 / 飛行時間測定 / イオン注入装置 / 中速イオン散乱 / Selective growth technique / Planarization technique / Real time monitoring / Silicon dioxide / Plasma CVD / シリコン薄膜 / 選択成長法 / 平坦化技術 / その場観察 / 全反射赤外吸収分光 / シリコン酸化膜 / プラズマCVD / Si interface / Layr-by-layr oxidation / Atomic step structure / Hydrogen-terminated Si / Surface microroughness / Silicon surface / 全反射赤外吸収分析 / 表面酸化 / 圧縮性応力 / LOフォノン / layer by layer酸化 / 表面モフォロジー / Si界面 / 原子層酸化 / 原子ステップ構造 / 水素終端表面 / 表面マイクロラフネス / シリコン表面 / 超薄膜 / デバイス設計・製造プロセス / 特性ばらつき / ナノデバイスインテグリティ / ナノCMOS / ナノ材料 / デバイス設計・製造プロセス・超薄膜 / 半導体超微細化 / 電子デバイス / ポストスケーリング技術 / シリコンULSI / シグナルインテグリティ / 三次元構造デバイス / ナノ構造化メモリ / ゲルマニウム / 超々大規模集積回路 / 表面ポテンシャル解析 / 電子保持特性 / トンネル電子注入 / 量子デバイス / メモリデバイス / レーザ誘起脱離 / 弗化層 / エクシマレーザ / エッチング / ジシラン吸着層 / レ-ザ誘起反応 / エキシマレ-ザ / 炭酸ガスレ-ザ / マイクロロ-ディング / 冷却プラズマCVD / レ-ザ誘起光化学反応 / デジタルCVD Less

Fabrication and Characterization of Super-atom-like Hybrid Nanodots for New Functional DevicesPrincipal Investigator
- Principal Investigator
  
  Seiichi Miyazaki
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
Formation of Self-Aligned Super-Atom-like Si-Ge based Quantum Dots and Characterization of Their Optical and Electrical PropertiesPrincipal Investigator
- Principal Investigator
  
  Seiichi Miyazaki
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
磁性合金ナノドットハイブリッド集積によるスピン物性制御と新機能メモリ応用Principal Investigator
- Principal Investigator
  
  宮崎誠一
- Project Period (FY)
  2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Synthesis of New Group IV Two Dimensional Materials
- Principal Investigator
  
  Shiraishi Kenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Alignment Control and Electrical Coupling of High-density Si-based Quantum DotsPrincipal Investigator
- Principal Investigator
  
  SEIICHI Miyazaki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its ElectroluminescencePrincipal Investigator
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
  Hiroshima University
Technology Evolution for Silicon Nano-Electronics
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Integration of silicon-based nano-scalestructure and its functional memory device applicationPrincipal Investigator
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hiroshima University
シリコン系スーパーアトム構造の高密度集積と新機能材料創成Principal Investigator
- Principal Investigator
  
  宮崎誠一
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
シリコンナノエレクトロニクスの新展開-ポストスケーリングテクノロジー
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
PN制御シリコン系ナノ結晶集積構造におけるキャリア輸送とエレクトロルミネッセンスPrincipal Investigator
- Principal Investigator
  
  宮崎誠一
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state controlPrincipal Investigator
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
Ultra-high Speed Global Interconnects for Inter-chip Communication
- Principal Investigator
  
  KIKKAWA Takamaro
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  HIROSHIMA UNIVERSITY
Control of Silicon quantum structures and its application to room-temperature device operationPrincipal Investigator
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
Basic Research on Electronic Properties and Memory Effect of Silicon-Quantum-Dot Array and Its Application to Memory Device
- Principal Investigator
  
  KOHNO Atsushi
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Fukuoka University
  Hiroshima University
半導体表面近傍に偏析した分子状不純物の紫外線レーザラマン分光法による高感度分析Principal Investigator
- Principal Investigator
  
  宮崎誠一
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  表面界面物性
- Research Institution
  Hiroshima University
シリコン量子ドット凝集体を用いたメモリデバイスに関する基礎的研究
- Principal Investigator
  
  香野淳
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Hiroshima University
Determination of Energy Distribution of Defect State Density for Ultrathin SiO_2/Si Interfaces by Using Photoelectron Yield SpectroscopyPrincipal Investigator
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
Self-Assembling Formation of Silicon Quantum Dots
- Principal Investigator
  
  HIROSE Masataka
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
Development of medium energy ion scattering spectroscopy using time of flight method and its application to semiconductor process evaluation
- Principal Investigator
  
  YOKOYAMA Shin
- Project Period (FY)
  1994 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY
低温半導体表面吸着分子のレーザ誘起反応の機構と原子層プロセス
- Principal Investigator
  
  広瀬全孝
- Project Period (FY)
  1992
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hiroshima University
Layr-by-layr oxidation mechanism of hydrogen-terminated silicon surfaces and their interface structures
- Principal Investigator
  
  HIROSE Masataka
- Project Period (FY)
  1992 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  HIROSHIMA UNIVERSITY
Development of selective deposition technique of sillicon dioxideinto extremely fine patterned structure and its application to G-bit memory wiring
- Principal Investigator
  
  HIROSE Masataka
- Project Period (FY)
  1992 – 1994
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B)
- Research Field
  
  電子材料工学
- Research Institution
  HIROSHIMA UNIVERSITY
低温半導体表面吸着分子のレ-ザ誘起反応の機構と原子層成長
- Principal Investigator
  
  広瀬全孝
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hiroshima University
プラズマ-表面相互作用の制御
- Principal Investigator
  
  広瀬全孝
- Project Period (FY)
  1990
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hiroshima University
プラズマ-表面相互作用の制御
- Principal Investigator
  
  HIROSE Masataka
- Project Period (FY)
  1989
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hiroshima University
プラズマ-表面相互作用の制御
- Principal Investigator
  
  広瀬全孝
- Project Period (FY)
  1988
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Hiroshima University
Study on the Fundamental Mechanism of Radical Beam Epitaxy
- Principal Investigator
  
  HIROSE Masataka
- Project Period (FY)
  1986 – 1988
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子材料工学
- Research Institution
  HIROSHIMA UNIVERSITY

[Book] 次世代半導体メモリの最新技術(第6章分担執筆:「シリコン系ナノ構造集積と機能メモリデバイス開発」)2009
- Author(s)
  宮崎誠一
- Total Pages
  23
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18063017
[Book] プラズマ・核融合学会誌(熱プラズマによるアモルファスシリコンの結晶化:講座熱流を伴う反応性プラズマを用いた材料合成プロセス3. 結晶化・相変化制御への応用, vol.85,No.3)2009
- Author(s)
  東清一郎、宮崎誠一
- Data Source
  KAKENHI-PROJECT-18063017
[Book] 実用薄膜プロセス-機能創製・応用展開-2009
- Author(s)
  宮崎誠一
- Total Pages
  22
- Publisher
  技術教育出版社(第1編「創製技術」第5章「CVD」)
- Data Source
  KAKENHI-PROJECT-21246053
[Book] 次世代半導体メモリの最新技術2009
- Author(s)
  宮崎誠一
- Total Pages
  23
- Publisher
  シーエムシー出版(第6章分担執筆 :「シリコン系ナノ構造集積と機能メモリデバイス開発」
- Data Source
  KAKENHI-PROJECT-21246053
[Book] 次世代半導体メモリーの最新技術、2009第6章分担執筆 : 「シリコン系ナノ構造集積と機能メモリデバイス開発」2009
- Author(s)
  宮崎誠一, 池田弥央
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18063017
[Book] 実用薄膜プロセス-機能創製・応用展開-2009
- Author(s)
  宮崎誠一
- Publisher
  技術教育出版社
- Data Source
  KAKENHI-PROJECT-18063017
[Book] 実用薄膜プロセス-機能創製・応用展開-(第1編「創製技術」第5章「CVD」)2009
- Author(s)
  宮崎誠一
- Total Pages
  22
- Publisher
  技術教育出版社
- Data Source
  KAKENHI-PROJECT-18063017
[Book] 次世代半導体メモリーの最新技術2007
- Author(s)
  宮崎誠一、池田弥央
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18063017
[Book] 表面科学2007
- Author(s)
  宮崎誠一
- Total Pages
  6
- Publisher
  日本表面科学会出版
- Data Source
  KAKENHI-PROJECT-18206035
[Book] 表面科学2007
- Author(s)
  宮崎誠一
- Total Pages
  6
- Publisher
  日本表面科学会出版
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Self-assembling formation of Si-QDs on SiO2 line patterns2024
- Author(s)
  Tsuji Ryoya、Imai Yuki、Baek Jongeun、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 3 Pages: 03SP04-03SP04
- DOI
  10.35848/1347-4065/ad1ca0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Formation of ultra-thin nickel silicide on SiO2 using Si/Ni/Si structures for oxidation control2024
- Author(s)
  Kimura Keisuke、Taoka Noriyuki、Ohta Akio、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 02SP72-02SP72
- DOI
  10.35848/1347-4065/ad1777
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Formation of β-FeSi2 nanodots by SiH4 exposure to Fe nanodots2024
- Author(s)
  Saito Haruto、Makihara Katsunori、Taoka Noriyuki、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 02SP99-02SP99
- DOI
  10.35848/1347-4065/ad1898
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure2023
- Author(s)
  Matsushita Keigo、Ohta Akio、Shibayama Shigehisa、Tokunaga Tomoharu、Taoka Noriyuki、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SG Pages: SG1007-SG1007
- DOI
  10.35848/1347-4065/acb65c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K22794, KAKENHI-PROJECT-21H04559
[Journal Article] Alignment control of self-assembling Si quantum dots2023
- Author(s)
  Imai Yuki、Tsuji Ryoya、Makihara Katsunori、Taoka Noriyuki、Ohta Akio、Miyazaki Seiichi
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 162 Pages: 107526-107526
- DOI
  10.1016/j.mssp.2023.107526
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] (Invited) Formation and Characterization of Fe-Silicide Nanodots for Optoelectronic Application2023
- Author(s)
  Miyazaki Seiichi、Makihara Katsunori
- Journal Title
  
  ECS Transactions
  
  Volume: 112 Issue: 1 Pages: 131-137
- DOI
  10.1149/11201.0131ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Formation of Ultra-thin NiGe Film with Single Crystalline Phase and Smooth Surface2022
- Author(s)
  S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SC Pages: SC1027-SC1027
- DOI
  10.35848/1347-4065/acac6f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Effects of Cl Passivation on Al2O3/GaN Interface Properties2022
- Author(s)
  T. Nagai, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SA Pages: SA1002-SA1002
- DOI
  10.35848/1347-4065/ac73d9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Study on Silicidation Reaction of Fe-NDs with SiH42022
- Author(s)
  H. Furuhata, K. Makihara, Y. Shimura, S. Fujimori, Y. Imai, A. Ohta, N. Taoka, and S. Miyazaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 5 Pages: 55503-55503
- DOI
  10.35848/1882-0786/ac6727
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Study on Electron Emission from Phosphorus d-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures2022
- Author(s)
  K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki
- Journal Title
  
  IEICE Trans, on Electronics
  
  Volume: E102-5 Pages: 610-615
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2022
- Author(s)
  J. Wu, K. Makihara, H. Zhang, H. Furuhata, N. Taoka, A. Ohta and S. Miyazaki
- Journal Title
  
  IEICE Trans, on Electronics
  
  Volume: E102-6 Pages: 616-621
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04559
[Journal Article] Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots2022
- Author(s)
  S. Miyazaki, and K. Makihara
- Journal Title
  
  ECS Trans.
  
  Volume: 104 Issue: 4 Pages: 105-112
- DOI
  10.1149/10404.0105ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559, KAKENHI-PROJECT-18KK0409
[Journal Article] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SC Pages: SC1059-SC1059
- DOI
  10.35848/1347-4065/acb1fd
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559, KAKENHI-PROJECT-23K22794
[Journal Article] Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique2022
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SD Pages: SD1012-SD1012
- DOI
  10.35848/1347-4065/ac61aa
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Impact of substrate heating during Al deposition and post annealing on surface morphology, Al crystallinity, and Ge segregation in Al/Ge(111) structure2022
- Author(s)
  Matsushita Keigo、OHTA Akio、Taoka Noriyuki、Hayashi Shohei、MAKIHARA Katsunori、MIYAZAKI Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SH Pages: SH1012-SH1012
- DOI
  10.35848/1347-4065/ac5fbc
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02169, KAKENHI-PROJECT-18KK0409, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots2022
- Author(s)
  S. Honda, K. Makihara, N. Taoka, H. Furuhata, A. Ohta, D. Oshima, T. Kato, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SA Pages: SA1008-SA1008
- DOI
  10.35848/1347-4065/ac2036
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559, KAKENHI-PROJECT-18KK0409
[Journal Article] Surface flattening and Ge crystalline segregation of Ag/Ge structure by thermal anneal2021
- Author(s)
  Ohta Akio、Yamada Kenzo、Sugawa Hibiki、Taoka Noriyuki、Ikeda Mitsuhisa、Makihara Katsunori、Miyazaki Seiichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBK05-SBBK05
- DOI
  10.35848/1347-4065/abdad0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K21142, KAKENHI-PROJECT-19H00762, KAKENHI-PROJECT-21H04559
[Journal Article] Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection2018
- Author(s)
  K. Makihara, M. Ikeda, N. Fujimura, K. Yamada, A. Ohta, and S. Miyazaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 1 Pages: 011305-011305
- DOI
  10.7567/apex.11.011305
- NAID
  210000136059
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Evaluation of the potential distribution in a multiple stacked Si quantum dots structure by hard X-ray photoelectron spectroscopy2018
- Author(s)
  Yuto Futamura, Yuta Nakashima, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SA Pages: SAAE01-SAAE01
- DOI
  10.7567/1347-4065/aaeb38
- NAID
  210000135209
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-17K18877
[Journal Article] Characterization of electron charging and transport properties of Si-QDs with phosphorus doped Ge core2018
- Author(s)
  Ryo Nagai, Kentaro Yamada, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta, and Seiichi Miyazaki
- Journal Title
  
  Semicond. Sci. Technol.
  
  Volume: 33 Pages: 124021-124021
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Impact of Phosphorus Doping to Multiple-Stacked Si Quantum Dots on Electron Emission Properties2017
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 183-187
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy2017
- Author(s)
  A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 178 Pages: 85-88
- DOI
  10.1016/j.mee.2017.05.001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-15H05520
[Journal Article] Potential Changes and Chemical Bonding Features for Si-MOS Diode as Evaluated from HAXPES Analysis2017
- Author(s)
  A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, and S. Miyazaki
- Journal Title
  
  Microelectronic Engineering
  
  Volume: 178 Pages: 80-84
- DOI
  10.1016/j.mee.2017.05.002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762, KAKENHI-PROJECT-15H05520
[Journal Article] Low Temperature Formation of Crystalline Si:H/Ge:H Heterostructures by Plasma Enhanced CVD in Combination with Ni-NDs Seeding Nucleation2017
- Author(s)
  Y. Lu, K. Makihara, D. Takeuchi, M. Ikeda, A. Ohta, and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S1 Pages: 06GG07-06GG07
- DOI
  10.7567/jjap.56.06gg07
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Impact of phosphorus doping to multiple-stacked Si quantum dots on electron emission properties2017
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Journal Title
  
  Material Science in Semiconductor Processing
  
  Volume: 印刷中
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Photoluminescence study of high density Si quantum dots with Ge core2016
- Author(s)
  K. Kondo, K. Makihara, M. Ikeda, and S. Miyazaki
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 119
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Evaluation of field emission properties from multiple-stacked Si quantum dots2016
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 68-71
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core2016
- Author(s)
  K. Yamada, K. Kondo, K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
- Journal Title
  
  ECS Trans.
  
  Volume: 75 Pages: 695-700
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Study on electroluminescence from multiply-stacking valency controlled Si quantum dots2016
- Author(s)
  T. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 48-51
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Photoluminescence study of high density Si quantum dots with Ge core2016
- Author(s)
  K. Kondo, K. Makihara, M. Ikeda and S. Miyazaki
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 119 Issue: 3 Pages: 033103-033103
- DOI
  10.1063/1.4940348
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H05762
[Journal Article] Crystalline Structure and Magnetic Properties of FePt Alloy Nanodots2015
- Author(s)
  R. Fukuoka, K. Makihara, H. Zhang, A. Ohta, Y. Tokuda, T. Kato, S. Iwata, and S. Miyazaki
- Journal Title
  
  Trans. of Mat. Res. Soc. Jpn
  
  Volume: in press
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H02239
[Journal Article] Application of remote hydrogen plasma to selective processing for Ge-based devices: Crystallization, etching, and metallization2014
- Author(s)
  K. Makihara, M. Ikeda, T. Okada, and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 11S Pages: 11RA02-11RA02
- DOI
  10.7567/jjap.53.11ra02
- NAID
  210000144616
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246054, KAKENHI-PROJECT-25709023
[Journal Article] Photoluminescence Study of Si Quantum Dots with Ge Core2014
- Author(s)
  K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki
- Journal Title
  
  ECS Trans.
  
  Volume: 64 Pages: 365-370
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory2014
- Author(s)
  Shintaro Otsuka, Tomohiro Shimizu, Shoso Shingubara, Katsunori Makihara, Seiichi Miyazaki, Atsushi Yamasaki , Yusuke Tanimoto, and Kouichi Takase
- Journal Title
  
  AIP Advances
  
  Volume: 4 Issue: 8 Pages: 087110-087110
- DOI
  10.1063/1.4892823
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-13J03342, KAKENHI-PROJECT-24246054
[Journal Article] Selective Growth of Self-Assembling Si and SiGe Quantum Dots2014
- Author(s)
  K. Makihara，M. Ikeda and S. Miyazaki
- Journal Title
  
  IEICE Trans. on Electronics
  
  Volume: Vol. E97-C Pages: 393-396
- NAID
  130004519104
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack2014
- Author(s)
  3.A. Ohta, H. Murakami, K. Hashimoto, K. Makihara and S. Miyazaki
- Journal Title
  
  ECS Trans.
  
  Volume: 64 Pages: 241-248
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy2014
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Journal Title
  
  ECS Trans.
  
  Volume: 64 Pages: 923-928
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy2014
- Author(s)
  D. Takeuchi，K. Makihara，M. Ikeda，S. Miyazaki，H. Kaki and T. Hayashi
- Journal Title
  
  IEICE Trans. on Electronics
  
  Volume: Vol. E97-C Pages: 397-400
- NAID
  130004519105
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] High Density Formation of Iron Nanodots on SiO2 Induced by Remote Hydrogen Plasma2013
- Author(s)
  H. Zhang, R. Fukuoka, Y. Kabeya, K. Makihara and S. Miyazaki
- Journal Title
  
  Advanced Materials Research
  
  Volume: 750-752 Pages: 1011-1015
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Study on Charge Storage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronic Application2013
- Author(s)
  S. Miyazaki, M. Ikeda and K. Makihara
- Journal Title
  
  ECS Trans.
  
  Volume: 58 Pages: 231-237
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application2013
- Author(s)
  S. Miyazaki
- Journal Title
  
  MRS Proceedings
  
  Volume: 1510
- DOI
  10.1557/opl.2013.272
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Temporal Changes of Charge Distribution in High Density Self-aligned Si-based Quantum Dots as Evaluated by AFM/KFM2013
- Author(s)
  N. Tsunekawa K. Makihara, M. Ikeda and S. Miyazaki
- Journal Title
  
  Trans. of MRS-J.
  
  Volume: 38 Pages: 393-396
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots　Hybrid Floating Gate in MOS Structures2013
- Author(s)
  M. Ikeda, K. Makihara and S. Miyazaki
- Journal Title
  
  IEICE Trans. on Electronics
  
  Volume: E96-C Pages: 694-698
- NAID
  110009588297
- Data Source
  KAKENHI-PROJECT-24246054
[Journal Article] Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots2013
- Author(s)
  .H. Takami, K. Makihara, M. Ikeda and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 4S Pages: 04CG08-04CG08
- DOI
  10.7567/jjap.52.04cg08
- NAID
  210000142065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24246054, KAKENHI-PROJECT-25709023
[Journal Article] Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density2012
- Author(s)
  K. Makihara, H. Deki, M Ikeda and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 4S Pages: 04DG08-04DG08
- DOI
  10.1143/jjap.51.04dg08
- NAID
  210000140534
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053, KAKENHI-PROJECT-24246054
[Journal Article] Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures2011
- Author(s)
  N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki
- Journal Title
  
  Key Engineering Materials
  
  Volume: Vol.470 Pages: 135-139
- DOI
  10.4028/www.scientific.net/kem.470.135
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices2011
- Author(s)
  S.Miyazaki
- Journal Title
  
  ECS Trans.
  
  Volume: 41 Issue: 7 Pages: 93-98
- DOI
  10.1149/1.3633288
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] High Density Formation of Ge Quantum Dots on SiO_22011
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, S. Takeuchi, Y. Shimura, S. Zaima and S. Miyazaki
- Journal Title
  
  Solid State Electronics
  
  Volume: Vol.60 Pages: 65-69
- URL
  http://dx.doi.org/10.1016/j.sse.2011.01.035
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices2011
- Author(s)
  S. Miyazaki
- Journal Title
  
  ECS Trans
  
  Volume: Vol.41 Pages: 93-98
- URL
  http://dx.doi.org/10.1149/1.3633288
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Formation of High Density Pt Nanodots on SiO_2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory2011
- Author(s)
  K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.50, No.8 Issue: 8S2 Pages: 08KE06-08KE06
- DOI
  10.1143/jjap.50.08ke06
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application2010
- Author(s)
  S.Miyazaki
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application2010
- Author(s)
  S.Miyazaki
- Journal Title
  
  Thin Solid Films
  
  Volume: 518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Formation of High Density Metal Silicide Nanodots on Ultrathin SiO_2 for Floating Gate Memory Application2010
- Author(s)
  S.Miyazaki
- Journal Title
  
  J.of Materials Science Forum
  
  Volume: 638-642 Pages: 1725-1730
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Collective Tunneling Model in Charge Trap Type NVM Cell2010
- Author(s)
  M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi, and T. Endoh
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.50, No.4 Issue: 4S Pages: 04DD04-04DD04
- DOI
  10.1143/jjap.50.04dd04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053, KAKENHI-PROJECT-22685003
[Journal Article] Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma2010
- Author(s)
  A. Kawanami, K. Makihara, M. Ikeda, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys (in press)
- NAID
  210000069046
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories2009
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, S. Miyazaki
- Journal Title
  
  IEICE Trans. on Electronics Vol.E92-C,No.5
  
  Pages: 616-619
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Charge Strage Characteristics of Hybrid Nanodots Floating Gate2009
- Author(s)
  S.Miyazaki
- Journal Title
  
  ECS Trans. Vol.25, No.7
  
  Pages: 433-439
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Formation of Metal Silicide Nanodots on Ultrathin SiO_2 for Floating Gate Application2009
- Author(s)
  S.Miyazaki
- Journal Title
  
  Solid State Phenomena Vol.154
  
  Pages: 95-100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Charge Strage Characteristics of Hybrid Nanodots Floating Gate2009
- Author(s)
  S.Miyazaki
- Journal Title
  
  ECS Trans Vol.25, No.7
  
  Pages: 433-439
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application2009
- Author(s)
  Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto
- Journal Title
  
  Solid State Phenomena Vol.154
  
  Pages: 95-100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2009
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, S. Miyazaki
- Journal Title
  
  Trans. of MRS-J Vol.34,No.2
  
  Pages: 309-312
- NAID
  130005003983
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi, S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Impact of impurity Doping into Si Quantum Dots with GeCore on Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 306-308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47(in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application2008
- Author(s)
  S. Miyazaki, K. Makihara, M. Ikeda
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 41-44
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi, s. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3103-3106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Impact of impurity Doping into Si Quantum Dots with GeCore on Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 306-308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47(in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi, s. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3099-3102
- NAID
  210000064670
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Self-Assembling Formation of Ni nanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Jpn. J. of Appl. Phys Vol.47, No.4
  
  Pages: 3099-3102
- NAID
  210000064670
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM2008
- Author(s)
  K. Makihara, J. Nishitani, M. Ikeda, S. Higashi and S, Miyazaki
- Journal Title
  
  Institute of Electronics Information and Communication Engineers Transactions on Electronics E91-C(in press)
- NAID
  110006343827
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys Vol.47, No.4B
  
  Pages: 3103-3106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO_2 Structure as Evaluated by AFM/KFM2008
- Author(s)
  K.Makihara, J. Nishitani, M. Ikeda, S. Higashi, S. Miyazaki
- Journal Title
  
  Institute of Electronics Informatioii and Communication Engineers Transactions on Electronics E91-C
- NAID
  110006343827
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe. Y. Kawaguchi, M. Dceda, S. Higashi, S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Chargin Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Hieashi and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3099-3102
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application2008
- Author(s)
  S. Miyazaki, K. Makihara and M. Ikeda
- Journal Title
  
  Thin Solid Films Vol.517, No. 1
  
  Pages: 41-44
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application2008
- Author(s)
  S. Miyazaki, K. Makihara and M. Ikeda
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 41-44
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3103-3106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki
- Journal Title
  
  Electrochemical Society Transaction 16
  
  Pages: 255-260
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Electrochemical Society Transaction 16
  
  Pages: 255-260
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM2008
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C
  
  Pages: 712-715
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quanturn Dots/SiO2 Structure as Evaluated by AFM/KFM2008
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
- Journal Title
  
  Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C
  
  Pages: 712-715
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
- Journal Title
  
  Materials Science Forum 561-565
  
  Pages: 1213-1216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application2007
- Author(s)
  S. Miyazaki, M. Ikeda and K. Makihara
- Journal Title
  
  Electrochemical Society Transactions 11
  
  Pages: 233-243
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electronic Chareed States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Bceda, H. Murakami, S. Higashi, S. Miyazaki
- Journal Title
  
  Materials Science Forum 561-565
  
  Pages: 1213-1216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quaatum Dots2007
- Author(s)
  J. Xu, K. Makihara, H Deki, Y. Kawaguchi. H. Murakami, S. Higashi, S. Miyazaki
- Journal Title
  
  Solid State Phenomena 121-123
  
  Pages: 557-560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots2007
- Author(s)
  J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki
- Journal Title
  
  Solid State Phenomena 121-123
  
  Pages: 557-560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memories2006
- Author(s)
  S.Miyazaki
- Journal Title
  
  Proceedings of The 8th International Conference on Solid-State and Integrated-Circuit Technology
  
  Pages: 736-739
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Self-assembling Formation of Silicon-Based Quantum Dots and Control of Their Electric Charged States for Multiple-Valued Memories2006
- Author(s)
  S.Miyazaki
- Journal Title
  
  Collected Abst. of 2006 RCIQE Int.Seminar for 21st Century COE Program : "Quantum Nanoelectronics for Meme-Media-Based Information Technologies(IV)"
  
  Pages: 41-44
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2006
- Author(s)
  S.Miyazaki, M.Ikeda, K.Makihara
- Journal Title
  
  ESC Trans. 2(印刷中)
- NAID
  120006665133
- Data Source
  KAKENHI-PROJECT-17636001
[Journal Article] Control of Electronic Charged States of Si-based Quantum Dots for Floating Gate Aplication2006
- Author(s)
  S.Miyazaki
- Journal Title
  
  Abst. of 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics
  
  Pages: 49-50
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Electronic Charged States of Si-based Quantum Dots for Multi-valued MOS Memories2006
- Author(s)
  S.Miyazaki
- Journal Title
  
  Proceedings of The 8th International Conference on Solid-State and Integrated-Circuit Technology
  
  Pages: 736-739
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2006
- Author(s)
  S.Miyazaki
- Journal Title
  
  Electrochemical Society(ECS) Trans. 2・1
  
  Pages: 157-157
- NAID
  120006665133
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2006
- Author(s)
  S.Miyazaki
- Journal Title
  
  Electrochemical Society(ECS) Trans. 2・1
  
  Pages: 157-157
- NAID
  120006665133
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Control of Electronic Charged States of Si-based Quantum Dots for Floating Gate Aplication2006
- Author(s)
  S.Miyazaki
- Journal Title
  
  Abst. of 2nd International WorkShop on New Group IV Semiconductor Nanoelectronics
  
  Pages: 49-50
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots2005
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  IEICE Trans.on Electronics E88-C/4(In press)
- NAID
  110003175632
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of Discrete Charged States in Si-Based Quantum Dots and Its Application to Floating Gate Memories2005
- Author(s)
  S.Miyazaki
- Journal Title
  
  Proc.of Int.Symp.on Surface Science and Nanotechnology
  
  Pages: 541-541
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-40]
  
  Pages: 112-113
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe2005
- Author(s)
  K.Makihara, J.Xu, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
  
  Pages: 32-33
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]
  
  Pages: 294-295
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of MaltiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases2005
- Author(s)
  T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of The 2005 Int. Conf.on Solid State Devices and Materials [G-2-6]
  
  Pages: 174-175
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] シリコン系量子ドットのフローティングゲートMOSデバイス応用2005
- Author(s)
  宮崎誠一
- Journal Title
  
  表面技術 56-12
  
  Pages: 162-168
- NAID
  10016921340
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Self-Assembling Formation of Si-based Quantum Dots and Control of Their Electric Charged States for Multi-valued Memories2005
- Author(s)
  S.Miyazaki
- Journal Title
  
  SPIE conference on Nanofabrication : Technologies, Devices, and Applications II (SA111) at Optics East
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe2005
- Author(s)
  K.Makihara, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-34]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Multi Step Electron Chargeing to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases2005
- Author(s)
  T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-39]
  
  Pages: 110-111
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected by AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, Y.Darma, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]
  
  Pages: 177-180
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] 自己組織化シリコン系量子ドットを用いた次世代・機能メモリ開発2005
- Author(s)
  宮崎誠一
- Journal Title
  
  月刊マテリアルステージ 5-3
  
  Pages: 18-24
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the nucleation density of si quantum dots by remote hydrogen plasma treatment2005
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Applied Surface Science 244/1-4
  
  Pages: 75-78
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memorie2005
- Author(s)
  S.Miyazaki
- Journal Title
  
  Abst.of First Int.Workshop on New Group IV Semiconductor Nanoelectronics
  
  Pages: 39-40
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures2004
- Author(s)
  S.Miyazaki, T.Shibaguchi, M.Ikeda
- Journal Title
  
  Abst. of 2004 MRS Fall Meeting(Boston, U.S.A., Nov. 29-Dec. 3,2004)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characterization of Stacked Floating Gates of Silicon Quantum Dots2004
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-39]
  
  Pages: 98-99
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO_2 by Combination of Low-Pressure CVD with Remote Plasma Treatments2004
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-35]
  
  Pages: 90-91
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots2004
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices [H-2-4]
  
  Pages: 126-127
- NAID
  110003175632
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment2004
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of 12th Int. conf. on Solid Films and Surfaces(Hamamatsu, June 21-25, 2004) [A5-2]
  
  Pages: 137-137
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories2004
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-40]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memories2004
- Author(s)
  S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-31]
  
  Pages: 82-83
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories2004
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials [H-2-4]
  
  Pages: 126-127
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of Single Si Quantum Dots with Ge Core Using AFM/Kelvin Probe Technique2004
- Author(s)
  Y.Darma, K.Takeuchi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-18]
  
  Pages: 52-53
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Electronic Transport through Si Dot with Ge Core as Detected by AFM Conductive Probe2004
- Author(s)
  Y.Darma, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-34]
  
  Pages: 88-89
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probr2004
- Author(s)
  K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-19]
  
  Pages: 54-55
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Charged States of Si Quantum Dots Floating Gate in MOS Structures2004
- Author(s)
  S.Miyazaki, T.Shibaguchi, M.Ikeda
- Journal Title
  
  Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Influence of Thermal Annealing on Compositional Mixing and Crystallinity of Highly Selective Grown Si Dots with Ge Core2004
- Author(s)
  Y.Darma, Hideki Murakami, S.Miyazaki
- Journal Title
  
  Applied Surface Science 244/1-4
  
  Pages: 156-159
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs2004
- Author(s)
  M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-17]
  
  Pages: 50-51
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique2004
- Author(s)
  K.Makihara, Y.Okamoto, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004)
- NAID
  110003175633
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Self-Assembling of Si Quantum Dots and Their Application to Memory Devices2003
- Author(s)
  S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Electronic Charged State of Single Si Quantum Dots with and without Ge core as Detected by AFM/Kelvin Probe Technique2003
- Author(s)
  Y.Darma, K.Takeuchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Infuence of Thermal Annealing on Compotional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core2003
- Author(s)
  Y.Darma, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17, 2003)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots floating Gate2003
- Author(s)
  T.Shibaguchi, Y.Shimizu, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)
- NAID
  110003175365
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Transport Through Si Dot with Ge Core Using AFM Conducting Probe2003
- Author(s)
  Y.Darma, S.Miyazaki
- Journal Title
  
  Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31,2003)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs2003
- Author(s)
  M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO_2 by Combination of Low-Pressure CVD and Remote Plasma Treatments2003
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29,2004)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Thermal Stability of Nanometer Dot Consisting of Si Clad and Ge Core as Detected by Raman and Photoemission Spectroscopy2003
- Author(s)
  Y.Darma, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)
- NAID
  110003175364
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe2003
- Author(s)
  K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)
- NAID
  110003175342
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Electronic Charged States of Single Si Quantum Dots with Ge Core as Detected by AFM/Kelviin Probe Technique2003
- Author(s)
  Y.Darma, K.Takeuchi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum Dots Floating Gate MOS Memories2003
- Author(s)
  M.Ikeda, Y.Shimizu, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si02 by Combination of Low-Pressure CVD with Remote Plasma Treatments
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]
  
  Pages: 90-91
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Transport Through Si Dot with Ge Core Using AFM Conducting Probe
- Author(s)
  Y.Darma, S.Miyazaki
- Journal Title
  
  Dig. of Papers 2003 Int. Microprocesses and Nanotechnology Conf. (Tokyo, October 29-31, 2003) [29B-2-3]
  
  Pages: 22-23
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characterization of Stacked Floating Gates of Silicon Quantum Dots
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-39]
  
  Pages: 98-99
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Electronic Transport through Si Dot with Ge Core as Detected by AFM Conductive Probe
- Author(s)
  Y.Darma, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-34]
  
  Pages: 88-89
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-40]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of MaltiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
- Author(s)
  T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of The 2005 Int. Conf. on Solid State Devices and Materials [G-2-6]
  
  Pages: 174-175
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
- Author(s)
  M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta, T. Endoh
- Journal Title
  
  IEICE
  
  Volume: Vol.94-C, No.5 Pages: 730-736
- NAID
  10029505917
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si0_2 by Combination of Low-Pressure CVD and Remote Plasma Treatments
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S., Higashi, S.Miyazaki
- Journal Title
  
  Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29, 2004) [28P-6-68L]
  
  Pages: 216-217
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs
- Author(s)
  M.Ikeda, Y.Shimizu, T.Shibaguchi H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-9-1]
  
  Pages: 846-847
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe
- Author(s)
  K.Makihara, J.Xu, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
  
  Pages: 32-33
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of 12th Int. conf. on Solid Films and Surfaces (Hamamatsu, June 21-25, 2004 ) [A5-2]
  
  Pages: 137-137
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Analysis of Charging Characteristics in MOSFETs with a Si-Quantum-Dots Floating Gate
- Author(s)
  T.Shibaguchi, Y.Shimizu, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.4]
  
  Pages: 151-154
- NAID
  110003175365
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures
- Author(s)
  S.Miyazaki, T.Shibaguchi, M.Ikeda
- Journal Title
  
  Abst. of 2004 MRS Fall Meeting (Boston, U.S.A., Nov. 29-Dec. 3, 2004) D5-8
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Charged States of Si Quantum Dots Floating Gate in MOS Structures
- Author(s)
  S.Miyazaki, T.Shibaguchi, M.Ikeda
- Journal Title
  
  Abst. of Electrochemical Society-Int. Symp. on Nanoscale Devices and Materials (Hawai, Oct. 3-8, 2004) NO.1013
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique
- Author(s)
  K.Makihara, Y.Okamoto, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.5]
  
  Pages: 277-280
- NAID
  110003175633
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots
- Author(s)
  T.Shibaguchi, M.Ikeda, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.4]
  
  Pages: 273-276
- NAID
  110003175632
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum Dots Floating Gate MOS Memories
- Author(s)
  M.Ikeda, Y.Shimizu, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-17]
  
  Pages: 42-43
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe
- Author(s)
  K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H..Murakami, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [2.4]
  
  Pages: 37-40
- NAID
  110003175342
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Thermal Stability of Nanometer Dot Consisting of Si Clad and Ge Core as Detected by Raman and Photoemission Spectroscopy
- Author(s)
  Y.Darma, S.Miyazaki
- Journal Title
  
  Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003) [7.3]
  
  Pages: 145-149
- NAID
  110003175364
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate nMOSFETs
- Author(s)
  M.Ikeda, Y.Shimizu, T.Shibaguchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-17]
  
  Pages: 50-51
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probr
- Author(s)
  K.Makihara.Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-19]
  
  Pages: 54-55
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Electronic Charged States of Single Si Quantum Dots with Ge Core as Detected by AFM/Kelviin Probe Technique
- Author(s)
  Y.Darma, K.Takeuchi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2003 Int. Conf. on Solid State Devices and Materials (Tokyo, September 16-18, 2003) [E-3-3]
  
  Pages: 300-301
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of Single Si Quantum Dots with Ge Core Using AFM/Kelvin Probe Technique
- Author(s)
  Y.Darma, K.Takeuchi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-18]
  
  Pages: 52-53
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memories
- Author(s)
  S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-31]
  
  Pages: 82-83
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Electronic Charged State of Single Si Quantum Dots with and without Ge core as Detected by AFM/Kelvin Probe Technique
- Author(s)
  Y.Darma, K.Takeuchi, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-18]
  
  Pages: 44-45
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Self-Assembling of Si Quantum Dots and Their Application to Memory Devices
- Author(s)
  S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Mar. 17, 2003, Hiroshima) [P-16]
  
  Pages: 40-41
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot. Floating Gate in Metal-Oxide-Semiconductor Memories
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials (Tokyo, September 15-17, 2004) [H-2-4]
  
  Pages: 126-127
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Infuence of Thermal Annealing on Compotional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core
- Author(s)
  Y.Darma, H.Murakami, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17,2003) [P2-45]
  
  Pages: 209-210
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Patent] 測定装置および測定方法2010
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2010-02-04
- Overseas
- Data Source
  KAKENHI-PROJECT-21246053
[Patent] 測定装置および測定方法2010
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  国立大学法人広島大学
- Filing Date
  2010-02-04
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドジトの製造方法2010
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  国立大学法人広島大学
- Filing Date
  2010-01-14
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドットの製造方法2010
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2010-01-14
- Overseas
- Data Source
  KAKENHI-PROJECT-21246053
[Patent] 測定装置および測定方法2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  広島大学
- Industrial Property Number
  2008-552633
- Filing Date
  2008-07-31
- Data Source
  KAKENHI-PROJECT-18206035
[Patent] 測定装置および測定方法2008
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2008-07-31
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 測定装置および測定方法2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  広島大学
- Acquisition Date
  2008-07-31
- Overseas
- Data Source
  KAKENHI-PROJECT-18206035
[Patent] 半導体素子2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎, 村上秀樹
- Patent Publication Number
  2008-288346
- Filing Date
  2008-11-27
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドット製造方法2008
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2008-03-01
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドット製造方法2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Patent Publication Number
  2008-270705
- Filing Date
  2008-11-06
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 測定装置および測定方法2008
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2008-07-31
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体素子2007
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2007-12-06
- Overseas
- Data Source
  KAKENHI-PROJECT-18206035
[Patent] 半導体メモリ、それを用いた半導体システム、および半導体メモリに用いられる量子ドットの製造方法2007
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2007-12-06
- Overseas
- Data Source
  KAKENHI-PROJECT-18206035
[Patent] 半導体メモリ、それを用いた半導体システム、および半導体メモリに用いられる量子ドットの製造方法2007
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2007-12-06
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体素子2007
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2007-12-06
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ2007
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Number
  2007-009772
- Filing Date
  2007-03-11
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] MOS電界効果トランジスタ型量子ドット発光素子および受光素子、これらを利用した光電子集積チップ2004
- Inventor(s)
  宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  宮崎誠一, 東清一郎
- Industrial Property Number
  2004-207620
- Filing Date
  2004-07-14
- Data Source
  KAKENHI-PROJECT-15206035
[Presentation] Study of Dot Size on Electron Emission from Multiple-Stacked Si-QDs2024
- Author(s)
  J. Baek, K. Makihara, N. Taoka, and S. Miyazaki
- Organizer
  ISPlasma2024/IC-PLANTS2024/APSPT-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Self-Assembling Mechanism of Si-QDs on Thermally-Grown SiO22023
- Author(s)
  J. Baek, Y. Imai, R. Tsuji, K. Makihara, and S. Miyazaki
- Organizer
  14th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Study on Photoluminescence from b-FeSi2 NDs2023
- Author(s)
  H. Saito, K. Makihara, N. Taoka, and S. Miyazaki
- Organizer
  14th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Impact of Dot Size on Electron Emission from Multiple-Stacked Si-QDs2023
- Author(s)
  K. Makihara, S. Obayashi, Y. Imai, N. Taoka, and S. Miyazaki
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of One-Dimensionally Aligned Si-QDs on SiO2 Line Pattern2023
- Author(s)
  R. Tsuji, Y. Imai, J. Baek, K. Makihara, and S. Miyazaki
- Organizer
  14th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Growth Mechanisms of Self- Assembling Si-QDs on Thermally-Grown SiO22023
- Author(s)
  J. Baek, Y. Imai, R. Tsuji, K. Makihara, and S. Miyazaki
- Organizer
  36th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of SiO2 Layer on SiGe/Si Nano-structures using Plasma-enhanced Atomic Layer Deposition2023
- Author(s)
  JIALUN CAI、NORIYUKI TAOKA、KATSUNORI MAKIHARA、AKIO OHTA、SEIICHI MIYAZAKI
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Self-Assembling Formation of Si-QDs on SiO2 Line-Patterns2023
- Author(s)
  R. Tsuji, Y. Imai, J. Baek, K. Makihara, and S. Miyazaki
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation and luminescence studies of Ge/Si core-shell quantum dots2023
- Author(s)
  S. Miyazaki, K. Makihara, and Y. Imai
- Organizer
  2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistor
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of β-FeSi2 NDs by SiH4-Exposure to Fe-NDs2023
- Author(s)
  H. Saito, K. Makihara, N. Taoka, and S. Miyazaki
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Layer Transfer of Ultrathin Ge Layer Segregated on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  35th International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] High-Density Formation and Characterization of Fe-Silicide Nanodots on SiO22022
- Author(s)
  J. Wu, H. Zhang, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  29th International Conference on Amorphous & Nanocrystaline Ssemiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of Fe3Si Nanodots and Characterization of Their Magnetoelectronic Transport Properties2022
- Author(s)
  J. Wu, H. Zhang, K. Makihara, N. Taoka, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of Ultra-thin NiGe film with Mono-crystalline Phase and Smooth Surface2022
- Author(s)
  S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Characterization of Light Emission Properties of Impurity Doped Ge/Si Core-Shell Quantum Dots2022
- Author(s)
  S. Miyazaki, Y. Imai, and K. Makihara
- Organizer
  242nd ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] 高温短時間熱処理による極薄SiO2上に形成したa-Si膜の結晶化2022
- Author(s)
  今井友貴、牧原克典、田岡紀之、大田晃生、宮崎誠一
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Characterization of Magnesium Channeled Implantation Layers in GaN(0001)2022
- Author(s)
  A. Suyama, H. Kawanowa, H. Minagawa, J. Maekawa, S. Nagamachi, M. Aoki, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] High-Density Formation of Fe-Silicide Nanodots and Their Magnetic-Field Dependent Electron Transport Properties2022
- Author(s)
  J. Wu, K. Makihara, N. Taoka, and S. Miyazaki
- Organizer
  The 3rd International Workshop on Advanced Nanomaterials for Future Electron Devices 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Structural and Light-emission Properties of High-density Superatom-like Ge-core/Si-shell Quantum Dots2022
- Author(s)
  K. Makihara, Y. Yamamoto, Y. Imai, N. Taoka, M. A. Schubert, B. Tillack,and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Change of Surface Morphology, Chemical Bonding Features and Crystalline Phases of Ultra-thin NixSi1-x Layers Due to Thinning2022
- Author(s)
  K. Kimura, N. Taoka, S. Nishimura, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Alignment Control of Self-Assembling Si Quantum Dots2022
- Author(s)
  Y. Imai, R. Tsuji, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of Fe-silicide-NDs and Characterization of Their PL Properties2022
- Author(s)
  H. Saito, K. Makihara, Y. Hara, S. Fujimori, Y. Imai, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Light-emission Properties of High-density Superatom-like Ge-core/Si-shell Quantum Dots2022
- Author(s)
  K. Makihara, Y. Yamamoto, Y. Imai, N. Taoka, M. A. Schubert, B. Tillack, and S. Miyazaki
- Organizer
  The 6th International Conference on Electronics, Communications and Control Engineering
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Surface Modification and Wafer Bonding of Ultrathin Ge Segregated Layer formed on Al/Ge(111)2022
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, K. Makihara,and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Si量子ドットの一次元配列制御2022
- Author(s)
  辻綾哉、今井友貴、牧原克典、田岡紀之、大田晃生、宮崎誠一
- Organizer
  2022年第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Evaluation of Chemical and Electronic States of Mg-doped GaN(0001) Surfaces2022
- Author(s)
  X. Tian, W. Liu, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Dot Size Dependence of Electron Emission from Si-QDs Multiple-Stacked Structures2022
- Author(s)
  S. Obayashi, K. Makihara, N. Taoka, A. Ohta,and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Alignment Control of Si-based Quantum Dots2022
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, and S. Miyazaki
- Organizer
  The 3rd International Workshop on Advanced Nanomaterials for Future Electron Devices 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Electronic Charged States of High Density Self-aligned Si-based Quantum Dots as Evaluated by Using an AFM/Kelvin Probe Technique2022
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Suppression of Ga Diffusion by Interfacial Barrier Layer in AlSiO/p-GaN2022
- Author(s)
  X. Tian, W. Liu, A. Ohta, N. Taoka, K. Makihara, T. Narita, K. Ito, K. Kataoka, S. Iwasaki, D. Kikuta, K. Tomita, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Two-Dimensional Ge Crystal Growth by Ge Surface Segregation of Metal/Ge Stack2022
- Author(s)
  A. Ohta and S. Miyazaki
- Organizer
  2022 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Effects of Cl Passivation on Al2O3/GaN Interface Properties2022
- Author(s)
  T. Nagai, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Evaluation of Chemical Structure and Si Segregation of Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  2022 Int. Conf. on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Fabrication and Characterization of Ge/Si Core-Shell Quantum Dots for Light Emission Devices2022
- Author(s)
  K. Makihara, Y. Yamamoto, B. Tillack, and S. Miyazaki
- Organizer
  Symposium Light emission and photonics of group IV semiconductor nanostructures
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Ultrathin Si Segregated Layer Formation on Al/Si(111)2022
- Author(s)
  T. Sakai, A. Ohta, K. Matsushita, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Photoemission Study of Mg Doped GaN(0001) Surfaces2022
- Author(s)
  W. Liu, X. Tian, A. Ohta, N. Taoka, K. Makihara, and S. Miyazaki
- Organizer
  ISPlasma2022/IC-PLANTS2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Formation of Ultra-thin Nickel Silicide Layer on SiO2 and Control of Crystalline Phase and Surface Roughness2022
- Author(s)
  K. Kimura, S. Nishimura, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Study on Photoluminescence Properties of Fe-silicide-NDs2022
- Author(s)
  H. Saito, K. Makihara, Y. Hara, S. Fujimori, Y. Imai, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Crystalline Phase Control of Hf-oxide Layer due to Si Surface Orientations2022
- Author(s)
  W. Yasuda, N. Taoka, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  43rd Int. Symp. on Dry Process
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Study on Electron Emission from Phosphorus delta-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures2021
- Author(s)
  K. Makihara, T. Takemoto, S. Obayashi, A. Ohta, N. Taoka, and S. Miyazaki
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2021
- Author(s)
  J. Wu、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] High Density Formation and Light Emission Characterization of Si Quantum Dots with Ge Core2021
- Author(s)
  K. Makihara, and S. Miyazaki
- Organizer
  2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] リモート H2 プラズマ支援による高密度 Fe 系シリサイドナノドットの高密度一括形成2021
- Author(s)
  何智雪, 武嘉麟, 牧原克典, 張海, 古幡裕志，田岡紀之, 大田晃生, 宮崎誠一
- Organizer
  2021年第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Roles for Si, Oxygen atoms and Oxygen Vacancy in Crystalline Phase Stabilization of HfZr-oxide Layer2021
- Author(s)
  N. Taoka, R. Hasegawa, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  2021 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology- (IWDTF 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Study on Silicidation Reaction of Fe-NDs with SiH42021
- Author(s)
  H. Furuhata, K. Makihara, A. Ohta, N. Taoka and S. Miyazaki
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Characterization of Electronic Charged States of High Density Self-aligned Si-based Quantum Dots Evaluated with AFM/Kelvin Probe Technique2021
- Author(s)
  Y. Imai, K. Makihara, N. Taoka, A. Ohta, and S. Miyazaki
- Organizer
  34th International Microprocesses and Nanotechnology Conference (MNC 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Study on Silicidation Reaction of Fe-NDs with SiH4 for Light Emission Devices2021
- Author(s)
  H. Furuhata, K. Makihara, A. Ohta, N. Taoka, and S. Miyazaki
- Organizer
  2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] High Density Formation of Fe-based Silicide Nanodots Induced by Remote H2 Plasma2021
- Author(s)
  Z. He、J. Wu、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  42nd International Symposium on Dry Process (DPS2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Impact of Boron Doping and H2 Annealing on Light Emission from Ge/Si Core-Shell Quantum Dots2021
- Author(s)
  S. Miyazaki, K. Makihara
- Organizer
  240th ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots2021
- Author(s)
  J. Wu, K. Makihara, H. Zhang, H. Furuhata, N. Taoka, A. Ohta and S. Miyazaki
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2021(AWAD 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Remote Hydrogen Plasma-Assisted Formation and Characterization of High-Density Fe-Silicide Nanodots2021
- Author(s)
  J. Wu、Z. He、K. Makihara、H. Zhang、H. Furuhata、N. Taoka、A. Ohta、S. Miyazaki
- Organizer
  2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Fabrication and Characterization of Multiple Stack Si/Ge Quantum Dots for Light/Electron Emission Devices2021
- Author(s)
  S. Miyazaki
- Organizer
  13th International Conference And Expo On Nanotechnology & Nanomaterials (iNanotech 2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Impact of Substrate Heating on Surface Flattening and Ge Segregation of Al/Ge(111)2021
- Author(s)
  K. Matsushita, A. Ohta, N. Taoka, S. Hayashi, K. Makihara, and S. Miyazaki
- Organizer
  2021 International Workshop on Dielectric Thin Films For Future Electron Devices -Science and Technology- (IWDTF 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Photoemission-based Characterization of Interface Dipoles and Defect States for Gate Dielectrics2021
- Author(s)
  S. Miyazaki
- Organizer
  11th International Conference on Processing and Manufacturing of Advanced Materials (Thermec'2020/2021)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04559
[Presentation] Si-Ge系コア・シェル構造の高密度集積と光・電子物性制御2019
- Author(s)
  宮崎誠一
- Organizer
  市民公開講座　Siナノテクノロジー最前線
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] B添加がGeコアSi量子ドットのPL特性に及ぼす影響2019
- Author(s)
  永井僚, 藤森俊太郎, 前原拓哉, 池田弥央, 牧原克典, 大田晃生, 宮崎誠一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Si量子ドット多重連結構造からの電界電子放出特性 - 積層数依存性2019
- Author(s)
  竹本竜也, 二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Electron Field Emission from MultiplyStacked Structures consisting of Ge-Core Si Quantum Dots and Si Quantum Dots2019
- Author(s)
  Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials /12th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] mpact of Boron Doping into Si Quantum Dots with Ge Core on Their Photoluminescence Properties2019
- Author(s)
  Ryo Nagai, Shuntaro Fujimori, Takuya Maehara, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials /12th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi 量子ドット/Si 量子ドット多重連結構造からの電界電子放出特性および電子放出エネルギー評価2019
- Author(s)
  二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 光電子収率分光法による熱酸化SiO2/Si構造の電子状態計測2018
- Author(s)
  大田晃生、今川拓哉、池田弥央、牧原克典、宮崎誠一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Electroluminescence from Si-QDs with Ge Core2018
- Author(s)
  R. Nagai, K. Yamada, S. Fujimori, M. Ikeda, A. Ohta, K. Makihara, and S. Miyazaki
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] P添加GeコアSi量子ドットの帯電および電子輸送特性評価2018
- Author(s)
  永井僚、山田健太郎、藤森俊太郎、池田弥央、牧原克典、大田晃生、宮崎誠一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electron Charging and Local Electron Transport Properties of Si-QDs with Phosphorus Doped Ge Core2018
- Author(s)
  Ryo Nagai, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta and Seiichi Miyazaki
- Organizer
  Japan Student Chapter Meeting 2018 in Osaka
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] ナノ構造制御で展開する電子デバイス開発と機能進化・高度化への挑戦2018
- Author(s)
  牧原克典、宮崎誠一
- Organizer
  第3回ニューフロンティアリサーチワークショップ
- Invited
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Electroluminescence from Multiply Stacked Si Quantum Dots with Ge Core by Alternate Carrier Injection2018
- Author(s)
  Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, and Seiichi Miyazaki
- Organizer
  9th International SiGe Technology and Device Meeting/11th International Conference on Silicon Epitaxy and Heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Si-Ge系コア・シェル量子構造の高密度集積と光・電子物性制御2018
- Author(s)
  宮崎誠一
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electron Field Emission from Multiple-Stacking Si Quantum Dots with Ge Core2018
- Author(s)
  Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, and Seiichi Miyazaki
- Organizer
  2018 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electron Field Emission from Multiple-Stacked Ge Core Si-QDs2018
- Author(s)
  Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki
- Organizer
  12th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Luminescence Studies of Multiply Stacked Si Quantum Dots with Ge Core2018
- Author(s)
  K. Makihara, M. Ikeda, S. Miyazaki
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] P添加GeコアSi量子ドットの帯電および局所電気特性評価2018
- Author(s)
  永井僚, 藤森俊太郎, 池田弥央, 牧原克典, 大田晃生, 宮崎誠一
- Organizer
  第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造からのエレクトロルミネッセンス2018
- Author(s)
  牧原克典、池田弥央、藤村信幸、大田晃生、宮崎誠一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Ge/Si量子ドット上へのSi選択成長と室温PL特性2018
- Author(s)
  藤森俊太郎、山田健太郎、永井僚、池田弥央、牧原克典、宮崎誠一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Ge/Si量子ドット上へのSi選択成長および発光特性評価2018
- Author(s)
  藤森俊太郎, 山田健太郎, 永井僚, 牧原克典, 池田弥央, 宮崎誠一
- Organizer
  第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Photoemission Study of Gate Dielectrics and Stack Interfaces2018
- Author(s)
  S. Miyazaki, and A. Ohta
- Organizer
  2018 International Conference of Solid State of Device and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Selective Growth of Si for the Formation of Si-QDs with Ge Core and Their Photoluminescence Properties2018
- Author(s)
  Shuntaro Fujimori, Ryo Nagai, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki
- Organizer
  12th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドット/Si量子ドット多重集積構造からの弾道電子放出2018
- Author(s)
  二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第6回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Study on photoluminescence from Si quantum dots with Ge core2018
- Author(s)
  Shuntaro Fujimori, Ryo Nagai, Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki
- Organizer
  International Conference of Atomic Control Surface and Interface-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Si-Geナノ構造制御で展開する電子デバイス開発2018
- Author(s)
  牧原克典、宮崎誠一
- Organizer
  2018年日本表面真空学会中部支部研究会
- Invited
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electron Charging and Transport Properties of Si-QDs with Phosphorus Doped Ge Core2018
- Author(s)
  Ryo Nagai, Shuntaro Fujimori, Mitsuhisa Ikeda, Katsunori Makihara, Akio Ohta, and Seiichi Miyazaki
- Organizer
  9th International SiGe Technology and Device Meeting/11th International Conference on Silicon Epitaxy and Heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Evaluation of Potential Distribution in Multiply-Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2018
- Author(s)
  Y. Futamura, Y. Nakashima, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Operand Study of Multiple Stacked Si Quantum Dots by Hard X-ray Photoelectron Spectroscopy2018
- Author(s)
  Y. Nakashima, K. Makihara, M. Ikeda, A. Ohta, and S. Miyazaki
- Organizer
  10th Anniversary International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/11th International Conference on Plasma-Nano Technology & Science
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子トドット/Si量子トドット多重集積構造からの電界電子放出2018
- Author(s)
  二村湧斗、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Field Electron Emission from Multiply-Stacking Si Quantum Dots2017
- Author(s)
  Y. Nakashima, D. Takeuchi, K. Makihara , A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  10th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] High Density Formation of and Light Emission from Si-Quantum Dots with Ge core2017
- Author(s)
  S. Miyazaki, K. Yamada, M. Ikeda, and K. Makihara
- Organizer
  MRS spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Study of Light Emission from Si Quantum Dots with Ge core2017
- Author(s)
  S. Miyazaki
- Organizer
  Int. Conf. on Frontiers in Materials Processing, Application, Research & Technology
- Place of Presentation
  Bordeaux, France
- Year and Date
  2017-07-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 電子・正孔交互注入によるGeコアSi量子ドット多重集積構造の発光特性2017
- Author(s)
  牧原克典、池田弥央、藤村信幸、大田晃生、宮崎誠一
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドットの発光特性評価2017
- Author(s)
  山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-05
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Formation of Si-based Quantum Dots on Sub-micron patterned Si Substrates2017
- Author(s)
  M. Ikeda, L. Gao, K. Yamada, K. Makihara, A. Ohta and S. Miyazaki
- Organizer
  10th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2017
- Author(s)
  Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
- Organizer
  The 10th International Conference on Silicon Epitaxy and heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Processing and Characterization of High Density Si/Ge Quantum Dots for Electroluminescent Devices2017
- Author(s)
  S. Miyazaki
- Organizer
  The Semiconductor Process Integration 10 Conf.
- Place of Presentation
  National Harbor, Maryland
- Year and Date
  2017-10-01
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electroluminescence from Si-QDs with Ge Core2017
- Author(s)
  K. Yamada, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
- Organizer
  The 10th International Conference on Silicon Epitaxy and heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 硬X線光電子分光法によるSi量子ドット多重集積構造のオペランド分析2017
- Author(s)
  中島裕太、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第５回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Si細線構造への高密度Si量子ドット形成と発光特性2017
- Author(s)
  高磊、池田弥央、山田健太郎、牧原克典、大田晃生、宮崎誠一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-05
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Evaluation of Potential Distribution in Multiple Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy2017
- Author(s)
  Y. Nakashima, D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  The 10th Int. Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Coventry, UK
- Year and Date
  2017-05-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドットのEL特性評価2017
- Author(s)
  山田健太郎、池田弥生、牧原克典、大田晃生、宮崎誠一
- Organizer
  第５回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Electroluminescence of Super-atom-like Si-Ge based Quantum Dots Floating Gate2017
- Author(s)
  K. Makihara, M. Ikeda, N. Fujimura, A. Ohta, and S. Miyazaki
- Organizer
  2017 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Fabrication and characterization of multistack Si/Ge quantum dots for light emission devices2017
- Author(s)
  S. Miyazaki
- Organizer
  The 5th Int. Conf. on Advanced Materials Science and Technology
- Place of Presentation
  Makassar, Indonesia
- Year and Date
  2017-09-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Electroluminescence from Si-QDs with Ge Core2017
- Author(s)
  K. Yamada, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  The 10th Int. Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Coventry, UK
- Year and Date
  2017-05-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 硬X線光電子分光を用いたSi量子ドット多重集積構造の電位分布評価2017
- Author(s)
  中島裕太、竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-05
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Potential Changes and Chemical Bonding Features for Si-MOS Diodes as Evaluated from HAXPES Analysis2017
- Author(s)
  A. Ohta, H. Murakami, M. Ikeda, K. Makihara, E. Ikenaga, S. Miyazaki
- Organizer
  20th Conference on Insulating Films on Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 高密度GeコアSi量子ドットの室温EL特性評価2017
- Author(s)
  山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  第17回日本表面科学会中部支部学術講演会
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Evaluation of Energy Distribution of Filled Defects of Si Oxide Thin Films from Total Photoelectron Yield Spectroscopy2017
- Author(s)
  A. Ohta, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  20th Conference on Insulating Films on Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Luminescence Studies of High Density Si Quantum Dots with Ge core2017
- Author(s)
  K. Yamada, M. Ikeda, K. Makihara and S. Miyazaki
- Organizer
  10th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Si系量子ドット多重集積構造からの電界電子放出特性2016
- Author(s)
  中島裕太、大田晃生、竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  2016真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of light emission from Si quantum dots with Ge core2016
- Author(s)
  S. Miyazaki
- Organizer
  Int. Conf. on Processing and Manufacturing of Advanced Materials 2016
- Place of Presentation
  Granz, Austria
- Year and Date
  2016-05-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドットの発光メカニズム2016
- Author(s)
  近藤圭悟、池田弥央、牧原克典、宮崎誠一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Formation and Characterization of Si Quantum Dots with Ge Core for Functional Devices2016
- Author(s)
  S. Miyazaki, D. Takeuchi, M. Ikeda, and K. Makihara
- Organizer
  2016 Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba
- Year and Date
  2016-09-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Si細線構造への高密度Si量子ドット形成2016
- Author(s)
  高磊、竹内大智、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  2016真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Study of Electron Field Emission from Multiply-Stacking Si Quantum Dots2016
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Effect of Ge Core Size on Photoluminescence from Si Quantum Dots with Ge Core2016
- Author(s)
  K. Yamada, K. Kondo, M. Ikeda, K. Makihara, and S. Miyazaki
- Organizer
  230th Meeting of The Electrochemical Society
- Place of Presentation
  Honolulu, HI
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドット／Si量子ドット多重集積構造のEL特性2016
- Author(s)
  竹内大智、山田健太郎、牧原克典、池田弥央、大田晃生、宮崎誠一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Processing and Characterization of Si/Ge Quantum Dots2016
- Author(s)
  S. Miyazaki, K. Makihara, A. Ohta, and M. Ikeda
- Organizer
  Int. Electron Devices Meeting 2016
- Place of Presentation
  San Francisco, CA
- Year and Date
  2016-11-03
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] High Density Formation of and Light Emission from Silicon Quantum Dots with Ge Core2016
- Author(s)
  S. Miyazaki
- Organizer
  11th Workshop on Si-based Optoelectronic Materials and Devices
- Place of Presentation
  Nanjing, China
- Year and Date
  2016-06-16
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] High Density Formation and Light Emission Properties of Silicon Quantum Dots with Ge Core2016
- Author(s)
  Seiichi Miyazaki
- Organizer
  BIT's 2nd Annual World Congress of Smart Materials-2016
- Place of Presentation
  Singapore
- Year and Date
  2016-03-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Impact of Phosphorus Doping to Multiply-Stacking Si Quantum Dots on Electron Emission Properties2016
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Organizer
  7th Int. Symposium on Control of Semiconductor Interfaces and 8th Int. SiGe Technology and Device Meeting joint meeting
- Place of Presentation
  Nagoya
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドットにおけるGeコアサイズがPL特性に及ぼす影響2016
- Author(s)
  山田健太郎、近藤圭悟、池田弥央、牧原克典、宮崎誠一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドットのエレクトロルミネッセンス特性2016
- Author(s)
  山田健太郎、池田弥央、牧原克典、宮崎誠一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] P添加Si量子ドット多重集積構造の電界電子放出特性評価2015
- Author(s)
  竹内大智、牧原克典、大田晃生、宮崎誠一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] KFMによるFePtナノドットスタック構造の局所帯電評価2015
- Author(s)
  満行優介、大田晃生、牧原克典、宮崎誠一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H02239
[Presentation] Si量子ドット多重集積構造からの電子放出特性評価2015
- Author(s)
  竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第15回日本表面科学会中部支部研究会
- Place of Presentation
  名古屋
- Year and Date
  2015-12-19
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Effect of P-doping on Photoluminescence Properties of Si Quantum Dots with Ge Core2015
- Author(s)
  K. Kondo, K. Makihara, A. Ohta and S. Miyazaki
- Organizer
  2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Jeju, Korea
- Year and Date
  2015-06-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] GeコアSi量子ドットからのフォトルミネッセンス特性―温度依存性2015
- Author(s)
  近藤圭悟、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会 2015
- Place of Presentation
  名古屋
- Year and Date
  2015-11-17
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] Characterization of Field Emission Properties from Multiply-Stacking Si Quantum Dots2015
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta and S. Miyazaki
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Marseille, France
- Year and Date
  2015-07-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] 外部磁場が高密度FePtナノドットスタック構造の電子輸送特性に及ぼす影響2015
- Author(s)
  河瀬平雅、満行優介、大田晃生、牧原克典、宮崎誠一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H02239
[Presentation] GeコアSi量子ドットからの発光スペクトル―温度依存性2015
- Author(s)
  近藤圭悟、牧原克典、宮崎誠一
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15H05762
[Presentation] ナノドットを電極に用いたNi/SiOx/Niダイオードの抵抗変化特性評価2014
- Author(s)
  大田晃生、劉冲、荒井崇、竹内大智、張海、牧原克典、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス]
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Niナノドットを電極に用いたSiOx-ReRAMの抵抗変化特性2014
- Author(s)
  加藤祐介、劉冲、荒井崇、大田晃生、竹内大智、張海、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electron Emission from High Density Self-aligned Si-based Quantum Dots by Conducting-Probe Atomic Force Microscopy2014
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Mexico
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Electroluminescence from Multiply-Stacking B-doped Si Quantum Dots2014
- Author(s)
  T. Yamada, K. Makihara, Y. Suzuki, M. Ikeda and S. Miyazaki
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Mnナノドットを埋め込んだSiOx-Ni電極MIMダイオードの抵抗変化特性2014
- Author(s)
  荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  第14回日本表面科学会中部支部研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2014-12-20
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] P添加GeコアSi量子ドットのフォトルミネッセンス特性評価2014
- Author(s)
  近藤圭悟、鈴木善久、牧原克典、池田弥央、小山剛史、岸田英夫、宮崎誠一
- Organizer
  第61回春季応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 不純物添加Si量子ドット多重集積構造のエレクトロルミネッセンス特性評価2014
- Author(s)
  山田敬久、牧原克典、池田弥央、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] AFM/KFMによる自己整合一次元連結Si量子ドットの局所帯電評価2014
- Author(s)
  恒川直輝、牧原克典、池田弥央、宮崎誠一
- Organizer
  第61回春季応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Mnナノドットを埋め込んだSiリッチ酸化膜の抵抗変化特性2014
- Author(s)
  荒井崇、劉冲、大田晃生、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Mnナノドットを埋め込んだNi/SiOx/Ni構造の抵抗変化特性2014
- Author(s)
  荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス]
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electronic Charged States of Self-Aligned Coupled2014
- Author(s)
  K. Makihara, N. Tsunekawa, M. Ikeda and S. Miyazaki
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 導電性AFM探針による高密度一次元連結Si系量子ドットからの電子放出特性評価(II)2014
- Author(s)
  竹内大智、大田晃生、牧原克典、池田弥央、宮崎誠一
- Organizer
  第61回春季応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Ｐ／Ｎ制御Si量子ドット多重集積構造のエレクトロルミネッセンス2014
- Author(s)
  山田敬久、牧原克典、鈴木喜久、池田弥央、宮崎誠一
- Organizer
  第61回春季応用物理学会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Alignment Control and Electrical Coupling of Si-based Quantum Dots2014
- Author(s)
  K. Makihara and S. Miyazaki
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] FePt合金ナノドットの高密度形成と磁化特性評価2014
- Author(s)
  満行優介、張海、牧原克典、大田晃生、徳岡良浩、加藤剛志、岩田聡、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Ge 基板中のAs高効率活性化と低抵抗浅接合形成2014
- Author(s)
  浜田慎也、村上秀樹、小野貴寛、橋本邦明、大田晃生、花房宏明、東清一郎、宮崎誠一
- Organizer
  電気通信情報学会(SDM) [シリコン材料・デバイス]
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Si量子ドット多重集積構造からの電界電子放出特性評価2014
- Author(s)
  竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Impact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dots2014
- Author(s)
  Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] リモート水素プラズマ支援によるSiO2上へのFeシリサイドドットの高密度形成2014
- Author(s)
  張海、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] リモート水素プラズマ支援によるSiO2上へのFeシリサイドナノドットの高密度一括形成2014
- Author(s)
  張海、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第14回日本表面科学会中部支部研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2014-12-20
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] GeコアSi量子ドットのフォトルミネッセンス特性評価2014
- Author(s)
  近藤圭悟、牧原克典、池田弥央、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] リモートH2プラズマ処理が4H-SiC(0001)の表面マイクロラフネス及び欠陥準位密度に与える影響2014
- Author(s)
  グェンスァンチュン、大田晃生、竹内大智、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Photoluminescence Study of Si Quantum Dots with Ge Core2014
- Author(s)
  K. Makihara, K. Kondo, M. Ikeda and S. Miyazaki
- Organizer
  2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Mexico
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] CoPt合金ナノドット/極薄SiO2層における電子輸送特性の外部磁場依存性2014
- Author(s)
  壁谷悠希、張海、福岡諒、大田晃生、牧原克典、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Formation and characterization of hybrid nanodots embedded in gate dielectric for optoelectronic application2013
- Author(s)
  S. Miyazaki
- Organizer
  International conference on Processing and Manufacturing of advanced materials 2013
- Place of Presentation
  Las Vegas, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots2013
- Author(s)
  Y. Suzuki, K. Makihara, M. Ikeda and S. Miyazaki
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] バイアス印加が一次元連結Si系量子ドットのPL特性に及ぼす影響2013
- Author(s)
  鈴木善久、牧原克典、池田弥央、宮崎誠一
- Organizer
  第74回秋季応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 導電性AFM探針による高密度一次元連結Si系量子ドットからの電子放出特性評価2013
- Author(s)
  竹内大智、牧原克典、池田弥央、宮崎誠一
- Organizer
  第74回秋季応用物理学会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 一次元連結Si系量子ドットの電界発光減衰特性2013
- Author(s)
  鈴木善久、牧原克典、池田弥央、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2013
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] B添加Si量子ドット多重集積構造のエレクトロルミネッセンス2013
- Author(s)
  山田敬久、牧原克典、鈴木善久、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2013
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices2013
- Author(s)
  S. Miyazaki, K. Makihara and M. Ikeda
- Organizer
  JSPS Core-to Core Program Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Fukuoka
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electroluminescence from Self-Aligned Si-Based Quantum Dots Stack by Intermittent Bias Application2013
- Author(s)
  K. Makihara, H. Takami, Y. Suzuki, M. Ikeda, S. Miyazaki
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures and the 6th International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] AFM/KFMによる一次元連結・高密度Si系量子ドットにおける帯電電荷の経時変化計測2013
- Author(s)
  恒川直輝、牧原克典、池田弥央、宮崎誠一
- Organizer
  応用物理学会SC東海地区学術講演会2013
- Place of Presentation
  名古屋大学
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Formation of One-Dimensionally Self-Aligned Si-Based Quantum Dots and Its Application to Light Emitting Diodes2013
- Author(s)
  K. Makihara and S. Miyazaki
- Organizer
  26th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  Hokkaido
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electroluminescence from Multiply-Stacked B-doped Si Quantum Dots2013
- Author(s)
  T. Yamada, K. Makihara, H. Takami, Y. Suzuki, M. Ikeda and S. Miyazaki
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures and the 6th International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Electronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devices2013
- Author(s)
  S. Miyazaki
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  仙台
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electron Transport Through Ultra High Density Array of One-dimensionally Self-Aligned Si-based Quantum Dots2013
- Author(s)
  H. Niimi, K. Makihara, M. Ikeda and S. Miyazaki
- Organizer
  2013 International Conference on Solid State Devices and Materials
- Place of Presentation
  Fukuoka
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Optoelectronic Response of Metal-Semiconductor Hybrid Nanodots Floating Gate2013
- Author(s)
  S. Miyazaki
- Organizer
  2013 Energy Mmterials Nanotechnology Fall Meeting
- Place of Presentation
  Orando, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Study On Charge Storage and Optical Response of Hybrid Nanodots Floating Gate Mos Devices for Their Optoelectronic Application2013
- Author(s)
  S. Miyazaki
- Organizer
  224th ECS Meeting
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Formation of PtAl-Alloy Nanodots on Ultrathin SiO_2 Induced by Remote Hydrogen Plasma2012
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
- Organizer
  The 5th International Conference on Plasma-Nano Technology & Science(IC-PLANTS 2012)
- Place of Presentation
  Inuyama
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 一次元連結Si系量子ドットのEL特性評価2012
- Author(s)
  高見弘貴,牧原克典,出木秀典,池田弥央,宮崎誠一
- Organizer
  第59回春季応用物理学会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 一次元縦積連結シリコン系量子ドットの形成と発光ダイオードへの応用2012
- Author(s)
  牧原克典,宮崎誠一
- Organizer
  ED/CPM/SDM研究会
- Place of Presentation
  豊橋技術科学大学ベンチャー・ビジネス・ラボラトリー
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 一次元縦積み連結Si系量子ドットの室温共鳴トンネル伝導2012
- Author(s)
  牧原克典,池田弥央,宮崎誠一
- Organizer
  第59回春季応用物理学会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation of High Density Ge Quantum Dots and Their Electrical Properties2012
- Author(s)
  M. Ikeda, K. Makihara, A. Ohta and S. Miyazaki
- Organizer
  The 5th International Conference on Plasma-Nano Technology & Science(IC-PLANTS 2012)
- Place of Presentation
  Inuyama
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Si量子ドット/NiSiナノドットハイブリッドフローティングゲートにおける光励起電子のパルス電圧応答2012
- Author(s)
  池田弥央,牧原克典,宮崎誠一
- Organizer
  第59回春季応用物理学会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 熱プラズマジェットを用いたミリ秒熱処理によるPtおよびPtシリサイドナノドットの形成とフローティングゲートメモリ応用2012
- Author(s)
  牧原克典,山根雅人,池田弥央,東清一郎,宮崎誠一
- Organizer
  第59回春季応用物理学会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] AFM/KFMによる一次元連結・高密度Si系量子ドットの帯電状態の経時変化計測2012
- Author(s)
  牧原克典,恒川直輝,池田弥央,宮崎誠一
- Organizer
  第59回春季応用物理学会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots on Untrathin SiO_2 and Its Application to Light Emitting Diodes2012
- Author(s)
  K. Makihara, H. Deki, M. Ikeda and S. Miyazaki
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma2012)
- Place of Presentation
  Kasugai
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma2011
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, R. Ashihara, S. Higashi and S. Miyazaki
- Organizer
  15th International Conference on Thin Films(ICTF-15)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation of Hybrid Nanodots Floating Gate for Functional Memories2011
- Author(s)
  S.Miyazaki
- Organizer
  International Conference on Processing & Manufactturing of Advanced Materials
- Place of Presentation
  Quebec (Canada)(招待講演)
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Electrical Charging Characteristics of Hybrid Nanodots Floating Gates in MOS Devices2011
- Author(s)
  S. Miyazaki, K. Makihara, A. Ohta and M. Ikeda
- Organizer
  15th International Conference on Thin Films(ICTF-15)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 一次元連結・高密度Si系量子ドットにおけるEL発光2011
- Author(s)
  高見弘貴,牧原克典,出木秀典,池田弥央,宮崎誠一
- Organizer
  第72回秋季応用物理学会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide-Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices2011
- Author(s)
  S. Miyazaki
- Organizer
  220th Electrochemical Society(ECS) Meeting
- Place of Presentation
  Boston, MA
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 化学気相成長法2011
- Author(s)
  宮崎誠一
- Organizer
  日本学術振興会薄膜第131委員会第28回薄膜スクール
- Place of Presentation
  蒲群市(愛知県)(招待講演)
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density2011
- Author(s)
  K. Makihara, H. Deki, M Ikeda and S. Miyazaki
- Organizer
  2011 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] ランプセッション「エレクトロニクスを支える電子材料～2020年への展望～」(パネラー)2011
- Author(s)
  宮崎誠一
- Organizer
  30th Electronic Materials Symposium
- Place of Presentation
  守山市(滋賀県)(招待講演)
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] ランプセッション「エレクトロニクスを支える電子材料~2020年への展望~2011
- Author(s)
  宮崎誠一
- Organizer
  30th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Electrical Charging Characteristics of Hybrid Nanodots Floating Gates in MOS Devices2011
- Author(s)
  S.Miyazaki
- Organizer
  15th International Conference on Thin Films
- Place of Presentation
  Kyoto (Japan)
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Characterization of La- and Mg-Diffused HfO_2/SiO_2 Stack Structures of for Next Generation Gate Dielectrics2011
- Author(s)
  S.Miyazaki
- Organizer
  7th Pacific Rim International Conference on Advanced Materials and Processing
- Place of Presentation
  Cairns (Australia)(招待講演)
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Electrical Characterization of NiSi-NDs/Si-QDs Hybrid Stacked Floating Gate in MOS Capacitors2011
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta and S. Miyazaki
- Organizer
  2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD 2011)
- Place of Presentation
  Daejeon, Korea
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Application of Remote Hydrogen Plasma to Selective Processing for Gebased Devices-Crystallization, Etching and Metallization2011
- Author(s)
  S.Miyazaki
- Organizer
  The 4th International Conference on Plasma-Nano Technology & Science (IC-PLANTS 2011)
- Place of Presentation
  Takayama
- Year and Date
  2011-03-11
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] プラズマジェット急速熱処理による高密度Ptナノドット形成とフローティングゲートメモリ応用2011
- Author(s)
  牧原克典,池田弥央,山根雅人,東清一郎,宮崎誠一
- Organizer
  第72回秋季応用物理学会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Characterization of La-and Mg-Diffused HfO_2/SiO_2 Stack Structures of for Next Generation Gate Dielectrics2011
- Author(s)
  S. Miyazaki
- Organizer
  7th Pacific Rim International Conference on Advanced Materials and Processing(PRICM7)
- Place of Presentation
  Cairns, Australia
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation of Hybrid Nanodots Floating Gate for Functional Memories2011
- Author(s)
  S. Miyazaki
- Organizer
  International Conference on Processing & Manufactturing of Advanced Materials(Themec' 2011)
- Place of Presentation
  Quebec, Canada
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 化学気相成長法2011
- Author(s)
  宮崎誠一
- Organizer
  日本学術振興会,薄膜第131委員会,第28回薄膜スクール
- Place of Presentation
  松風園,蒲郡
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation and Characterization of Silicon-Quantum-Dots/Metal-Silicide- Nanodots Hybrid Stack and its Application to Floating Gate Functional Devices2011
- Author(s)
  S.Miyazaki
- Organizer
  220th Electrochemical Society (ECS) Meeting
- Place of Presentation
  Boston (USA)(招待講演)
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation and Characterization of Hybrid Nanodots Stack Structure and Its Application to Floating Gate Memories2010
- Author(s)
  S.Miyazaki
- Organizer
  International Symposium on Technology Evoluation for Silicon Nano-Electronics (ISTESNE)
- Place of Presentation
  Tokyo
- Year and Date
  2010-06-04
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Fabrication and Characterization of Hybrid Nanodots for Floating Gate Application2010
- Author(s)
  S.Miyazaki
- Organizer
  International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structure2009
- Author(s)
  N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara, S. Miyazaki
- Organizer
  2009 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO22009
- Author(s)
  A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  The 2nd International Conference on Plasma-Nano Technology & Science
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories2009
- Author(s)
  S. Miyazaki, N. Morisawa, S. Nakanishi, A. Kawanami, M. Ikeda, K. Makihara
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  Boston, MA, USA
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots2009
- Author(s)
  K. Makihara, M. Ikeda, A. Kawanami, S. Miyazaki
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] 低炭素社会の実現に向けた先端基盤技術-太陽光発電を中心として-2009
- Author(s)
  宮崎誠一
- Organizer
  第12回「フレッシュ理科教室」-楽しい理科授業のための教材研修ワークショップ-
- Place of Presentation
  広島国際大学広島キャンパス国際教育センター
- Year and Date
  2009-08-11
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 「招待講演」「シリコンテクノロジーの挑戦-材料・プロセス・デバイスの新展開」について2009
- Author(s)
  宮崎誠一
- Organizer
  2009年秋季第70回応用物理学学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] メタル/高誘電率絶縁膜ゲートスタックにおける内部電位評価-メタルゲート仕事関数変化の起源2009
- Author(s)
  宮崎誠一
- Organizer
  2009年秋季第70回応用物理学学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Fun ctional Memories2009
- Author(s)
  S.Miyazaki
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  Boston, MA, USA
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] NiSiナノドット/Si量子ドット積層ハイブリッドフローティングゲートにおける電荷注入・放出特性2009
- Author(s)
  中西翔、池田弥央、森澤直也、牧原克典、川浪彰、東清一郎、宮崎誠一
- Organizer
  第70回秋季応用物理学会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] 「招待講演」低炭素社会の実現に向けた先端基盤技術-太陽光発電を中心として-2009
- Author(s)
  宮崎誠一
- Organizer
  第12回「フレットュ理科教室」-楽しい理科授業のための教材研修ワークショップ-
- Place of Presentation
  広島国際大学広島キャンパス国際教育センター
- Year and Date
  2009-08-11
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] 「招待講演」プラズマによる薄膜形成技術2009
- Author(s)
  宮崎誠一
- Organizer
  第20回プラズマエレクトロニクス講習会「プラズマプロセスの基礎と応用」-低圧・大気圧実用プロセシングから先端薄膜・バイオ応用-
- Place of Presentation
  慶応義塾大学日吉キャンパス来往舎
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] プラズマによる薄膜形成技術2009
- Author(s)
  宮崎誠一
- Organizer
  第20回プラズマエレクトロニクス講習会「プラズマプロセスの基礎と応用」-低圧・大気圧実用プロセシングから先端薄膜・バイオ応用-
- Place of Presentation
  慶応義塾大学日吉キャンパス来往舎
- Year and Date
  2009-10-29
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] 「シリコンテクノロジーの挑戦-材料・プロセス・デバイスの新展開」について2009
- Author(s)
  宮崎誠一
- Organizer
  2009年秋季第70回応用物理学学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Charge Storage and Optical Response of Hybrid Nanodots Floating Gate For Functional Memories2009
- Author(s)
  宮崎誠一
- Organizer
  2009 MRS Fall Meeting
- Place of Presentation
  Boston, MA
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma2009
- Author(s)
  A. Kawanami, K. Makihara, M. Ikeda, S. Miyazaki
- Organizer
  International Symposium on Dry Process (DPS2009)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO22009
- Author(s)
  A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
- Organizer
  The 2nd International Conference on Plasma-Nano Technology & Science
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] プラズマによる薄膜形成技術2009
- Author(s)
  宮崎誠一
- Organizer
  第20回プラズマエレクトロニクス講習会「プラズマプロセスの基礎と応用」-低圧・大気圧実用プロセシングから先端薄膜・バイオ応用-
- Place of Presentation
  慶応義塾大学日吉キャンパス来往舎
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] 「招待講演」メタル/高誘電率絶縁膜ゲートスタックにおける内部電位評価-メタルゲート仕事関数変化の起源2009
- Author(s)
  宮崎誠一
- Organizer
  2009年秋季第70回応用物理学学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Si量子ドット/NiSiナノドットハイブリッド積層FG-MOS構造における光誘起電荷移動2009
- Author(s)
  森澤直也、池田弥央、中西翔、川浪彰、牧原克典、東清一郎、宮崎誠一
- Organizer
  第70回秋季応用物理学会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] メタル/高誘電率絶縁膜ゲートスタックにおける内部電位評価-メタルゲート仕事関数変化の起源2009
- Author(s)
  宮崎誠一
- Organizer
  2009年秋季第70回応用物理学学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Formation of metal and silicide nanodots on ultrathin gate oxide induced by H2-plasma, (Invited : IO-11)2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
- Organizer
  17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineering
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara and K. Shimanoe
- Organizer
  The European Materials Research Society 2008 Fall Meeting
- Place of Presentation
  Warszawa, Porland
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Formation of metal and silicide nanodots on uitathin gate oxide induced by H2-plasma2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto
- Organizer
  17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineerring (9th ICASE)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of metal and silicide nanodots on ultathin gate oxide induced by H2-plasma2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
- Organizer
  17th World Interfinish Congress & Exposition with 9th International Conference on Advanced Surface Engineerring (9th ICASE)
- Place of Presentation
  Busan, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Charge Injection and Emission Characteristics of Hybrid Floating Gate Stack Consisting of NiSi-Nanodots and Silicon-Quantum-Dots2008
- Author(s)
  M. Ikeda, R. Matsumoto, K. Shimanoe, K. Makihara, S. Miyazaki
- Organizer
  2008 International Conference on Solid state Devices and Materials
- Place of Presentation
  Tukuba
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories2008
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, s. Miyazaki
- Organizer
  2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Hokkaido
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2008
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki
- Organizer
  International Union Material Research Society (IUMRS)-International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Formation of Ni- and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories2008
- Author(s)
  M. Ikeda, K. Shimanoe, R. Matsumoto, K. Makihara, s. Miyazaki
- Organizer
  The 2008 International Meeting for Futureof Electron Devices, Kansai
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  214th Electrochemical Society (ECS) Meet ing : SiGe & Ge Materials, Processing, and Device Symposium
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Selective Growth of Self-Assembling Si and SiGe Quantum Dots2008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2008
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, s. Miyazaki
- Organizer
  International Union Material Research Society (IUMRS) - International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Metal Nanodots Formation Induced by Remote Plasma Treatment-Comparison between the effects of H2 and rare gas plasmas-2008
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  International Union Material Research Societv (IUMRS) - International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  4th International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-P1asma Assisted Technique2008
- Author(s)
  K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, s. Higashi, s. Miyazaki
- Organizer
  The 4th Vacuum and Surface Sciences Conference of Asia and Australia
- Place of Presentation
  Matsue
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
- Organizer
  4th International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Fonnation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, s. Higashi, S. Miyazaki
- Organizer
  4th International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Metal Nanodots Formation Induced by Remote Plasma Treatment-Comparison between the effects of H2 and rare gas plasmas-2008
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  International Union Material Research Society (IUMRS)-International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Formation of Ni-and Pt-Nanodots Induced by Remote Hydrogen Plasma Treatment and Their Application to Floating Gate MOS Memories2008
- Author(s)
  M. Ikeda, K. Shimanoe, R. Matsumoto, K. Makihara and S. Miyazaki
- Organizer
  The 2008 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-P1 asma Assisted Technique2008
- Author(s)
  K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, S. Higashi and S. Miyazaki
- Organizer
  The 4th Vacuum and Surface Sciences Conference of Asia and Australia
- Place of Presentation
  Matsue
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Plasmaenhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Application, (Invited: QI-8)2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
- Organizer
  IUMRS International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Plasma-enhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Application2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto
- Organizer
  International Union Material Research Society (IUMRS)-International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Selective Growth of Self-Assembling Si and SiGe Quantum Dots2008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, s. Higashi, S. Miyazaki
- Organizer
  214th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing, and Device Symposium
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application2008
- Author(s)
  s. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe
- Organizer
  The European Materials Research Society2008 Fall Meeting
- Place of Presentation
  Warszawa, Poland
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Plasma-enhanced Self-assembling Formation of Metallic Nanodots on Ultrathin SiO2 for Floating Gate Application2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto
- Organizer
  International Union Material Research Society (IUMRS)- International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Metallic Nanodots on Ultrathin Gate Oxide Induced by H2-plasma Treatment and Its Application to Floating Gate Memories2008
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe, R. Matsumoto
- Organizer
  4th International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2007
- Author(s)
  S. Miyazaki, M. Ikeda and K. Makihara
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-22
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Electroluminescence from Multiple-Stacked Structures of Impuity Doped Si Quan turn Dots2007
- Author(s)
  K. Okuyama, K. Makihara, M. Ikeda. S. Hieashi, S. Miyazaki
- Organizer
  2007 International Conference on SoHd State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Electron Charging and Discharging Characteristics of Si-Based Quantum Dots and Their Application of Floating Gate MOS Memories2007
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara
- Organizer
  3nd International Wodcshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots2007
- Author(s)
  K. Okuyama, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application2007
- Author(s)
  S. Miyazaki
- Organizer
  212th Electrochemical Society
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics2007
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-20
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-Plasma Treatment and Their Electrical Charging Characteristics2007
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of PtSi Nanodots Induced by Remote H_2 Plasma2007
- Author(s)
  K. Simanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  3nd International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Phosphorus Doping to Si Quantum Dots for Floating Gate Application2007
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi and S. Miyazaki
- Organizer
  2007 Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-11
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Ni Nanodots Induced by Remote Hydrogen Plasma2007
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  The European Materials Research Society 2007 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM2007
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics2007
- Author(s)
  K. Makihara, M. Dceda, S. Higashi, S. Miyazaki
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-20
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantuin-Dots Floating Gate by Applying Pulsed Gate Biases2007
- Author(s)
  R, Matsumoto, M. Ikeda, S. Higiashi, S. Miyazaki
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO_22007
- Author(s)
  K. Makihara, Y. Kawaguchi, M. Deeda.S. Higashi, S. Miyazaki
- Organizer
  The 2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Characterization of Electronic Charged States of Nickel Sikicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
- Organizer
  The Sixth Pacific Rim International Conference on Advanced Materials and Processing
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors2007
- Author(s)
  M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi and S. Miyazaki
- Organizer
  3nd International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of PtSi Nanodots Induced by Remote H_2 Plasma2007
- Author(s)
  K. Simanone, K. Makihara, A. Ohta, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  3nd International Workshop in New Group IV Semicond uctor Nanoelectronics
- Place of Presentation
  Sendai
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors2007
- Author(s)
  M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi, S. Miyazaki
- Organizer
  3nd International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Impact ofBoron Doping to Si Quaatum Dots on Light Emission Properties2007
- Author(s)
  K. Okuyama, K・ Makihara, A.Ohta, H. Murakami, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories2007
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-22
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO_22007
- Author(s)
  K. Makihara, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  The 2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2007
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Ni Nanodots Induced by Remote Hydrogen Plasma2007
- Author(s)
  K. Makihara, K, Shimanoe, Y. Kawaguchi, M. Dceda, S. Higashi, S.Miyazaki
- Organizer
  The European Materials Research Society 2007 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Phosphoras Doping to Si Quantum Dots for Floating Gate Application2007
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, H. Murakami. R, Matsumoto, E. Ikenaga, M. Kobata, J. Kim S. Higashi, S. Miyazaki
- Organizer
  2007 Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-11
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Characterization of Electoronic Charged States of Si-Based Quantum Dots for Floating Gate Application2007
- Author(s)
  S. Miyazaki
- Organizer
  212th Electrochemical Society
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO_2 Structure as Evaluated by AFM/KFM2007
- Author(s)
  K. Maldhara, M. Ikeda, S. ffigashi, S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Self-Assembling Fonnation of Ninanodots on SiO_2 Induced by Remote H_-Plasma Treatment and Their Electrical Charging Characteristics2007
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, S. Hieashi, S. Miyazaki
- Organizer
  2007 International Conference on SoM State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Impact of Boron Doping to Si Quantum Dots on Light Emission Properties2007
- Author(s)
  K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Electron Charging and Discharging Characteristics of Si-Based Quantum Dots and Their Application of Floating Gate MOS Memories2007
- Author(s)
  S. Miyazaki, M. Ikeda, K. Makihara
- Organizer
  3nd International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Self-Assembling Formation of Si-Based Quantum Dots and Control of Their Electronic Charged States for Multivalued MOS Memories2007
- Author(s)
  S. Miyazaki
- Organizer
  10th International Conference on Advanced Materials -International Union of Materials Research Societies
- Place of Presentation
  Bangalore, India
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Self-Assembling Formation of Si-Based Quantum Dots and Control of Their Electronic Charged States for Multivalued MOS Memories2007
- Author(s)
  S. Miyazaki
- Organizer
  10th International Conference on Advanced Materials - International Union of Materials Research Societies
- Place of Presentation
  Bangalore, India
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Characterization of electronic charged states of self-aligned coupled Si quantum dots by AFM/KFM Probe Technique
- Author(s)
  K. Makihara, N. Tsunekawa, M. Ikeda and S. Miyazaki
- Organizer
  2014 International SiGe Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-02 – 2014-06-07
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Crystalline Structure and Magnetic Properties of FePt Alloy Nanodots
- Author(s)
  K. Makihara, R. Fukuoka, H. Zhang, A. Ohta, Y. Tokuda, T. Kato, S. Iwata, and S. Miyazaki
- Organizer
  International Union Material Research Society - International Conference in Asia 2014
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Photoluminescence Properties of Si Quantum Dots with Ge Core
- Author(s)
  K. Kondo, K. Makihara and S. Miyazaki
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  東北大学
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] High Density Formation of Fe-Silicide Nanodots Induced by Remote Hydrogen Plasma
- Author(s)
  H. Zhang, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  東北大学
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] リモート水素プラズマ処理した4H-SiC表面の化学構造および電子状態分析
- Author(s)
  グェンスァンチュン、大田晃生、竹内大智、張海、牧原克典、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Impact of Phosphorus Doping to Multiply‐Stacking Si Quantum Dots on Electron Field Emission Properties
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta,M. Ikeda, S. Miyazaki
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17 – 2015-05-22
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Impact of Magnetic-Field Application on Electron Transport Through CoPt Alloy Nanodots
- Author(s)
  Y. Kabeya, H. Zhang, R. Fukuoka, A. Ohta, K. Makihara and S. Miyazaki
- Organizer
  International Union Material Research Society - International Conference in Asia 2014
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] リモート水素プラズマ支援によるTaナノドットの高密度一括形成
- Author(s)
  王亜萍、牧原克典、大田晃生、竹内大智、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Study on Electroluminescence from Multiply-Stacking Valency Controlled Si Quantum Dots
- Author(s)
  T. Yamada, K. Makihara, A. Ohta,M. Ikeda, S. Miyazaki
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17 – 2015-05-22
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Impact of Embedded Mn-Nanodots on Resistive Switching in Si-rich Oxides
- Author(s)
  T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki
- Organizer
  2014 International SiGe Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-02 – 2014-06-07
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Si量子ドット多重集積構造の電界電子放出特性評価
- Author(s)
  竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Electroluminescence from Multiply-Stack of Doped Si Quantum Dots
- Author(s)
  T. Yamada, K. Makihara, M. Ikeda and S. Miyazaki
- Organizer
  2014 International Conference on Solid State Devices and Materials
- Place of Presentation
  筑波
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Resistance-Switching of Ni Nano-dot/SiOx/Ni Diodes
- Author(s)
  A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki
- Organizer
  International Union Material Research Society - International Conference in Asia 2014
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Plasma-enhanced Self-assembling Formation of High-density Metallic Nanodots on Ultrathin SiO2
- Author(s)
  K. Makihara and S. Miyazaki
- Organizer
  Nagoya University (NU) & Sungkyunkwan University (SKKU) Joint Symposium 2014
- Place of Presentation
  Suwon, Korea
- Year and Date
  2014-11-26 – 2014-11-27
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] P添加Si量子ドット多重集積構造の電界電子放出特性
- Author(s)
  竹内大智、牧原克典、大田晃生、池田弥央、宮崎誠一
- Organizer
  第75回秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electron Field Emission from High Density Self-Aligned Si-Based
- Author(s)
  D Takeuchi, K. Makihara, A. Ohta, M. Ikeda, S. Miyazaki
- Organizer
  ７th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  名古屋大学
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 高密度FePtナノドットスタック構造の電子輸送特性
- Author(s)
  壁谷悠希、満行優介、張海、大田晃生、牧原克典、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Study of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2014-11-12 – 2014-11-13
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Study on Light Emission from Si Quantum Dots with Ge Core
- Author(s)
  S. Miyazaki
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17 – 2015-05-22
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)
- Author(s)
  H. Murakami, S. Hamada, T. Ono, K. Hashimoto, A. Ohta, H. Hanafusa, S. Higashi and S. Miyazaki
- Organizer
  226th Meeting of The Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-06 – 2014-10-09
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Si-rich酸化膜へのMnナノドット埋め込みが抵抗変化特性へ及ぼす影響
- Author(s)
  荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  ゲートスタック研究会 (第20回研究会)
- Place of Presentation
  三島
- Year and Date
  2015-01-29 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] High Density Formation of Mn and Mn-germanide Nanodots Induced by Remote Hydrogen Plasma
- Author(s)
  Y. Wen, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  International Union Material Research Society - International Conference in Asia 2014
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 光電子収率分光法によるSiO2/SiC界面の電子状態計測
- Author(s)
  大田晃生、竹内大智、グェンスァンチュン、牧原克典、宮崎誠一
- Organizer
  第75回秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Photoemission Study of High-k Dielectrics Stack on Ge(100) - Determination of Energy Bandgaps and Band Alignments
- Author(s)
  S. Miyazaki and A Ohta
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2014-11-12 – 2014-11-13
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Local Electrical Properties of Si-rich Oxides with Embedding Mn-nanodots by Atomic Force Microscopy Using Conducting-Probe
- Author(s)
  T. Arai, C. Liu, A. Ohta, K. Makihara and S. Miyazaki
- Organizer
  International Union Material Research Society - International Conference in Asia 2014
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 光電子収率分光法によるSiO2/SiC構造の電子状態計測(2)
- Author(s)
  大田晃生、渡邊浩成、グェンスァンチュン、牧原克典、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Resistance-Switching Characteristics of Si-rich Oxide as Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements
- Author(s)
  A. Ohta, C. Liu, T. Arai, D. Takeuchi, H. Zhang, K. Makihara and S. Miyazaki
- Organizer
  2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  金沢
- Year and Date
  2014-07-01 – 2014-07-03
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikada and S. Miyazaki
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  東北大学
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Luminescence Studies of High Density Si-based Quantum Dots
- Author(s)
  K. Makihara, T. Yamada, K. Kondo and S. Miyazaki
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2014-11-12 – 2014-11-13
- Invited
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 不純物添加Si量子ドット多重集積構造のエレクトロルミネッセンス
- Author(s)
  山田敬久、牧原克典、池田弥央、宮崎誠一
- Organizer
  第75回秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electroluminescence from Multiply-Stack of Doped Si Quantum Dots
- Author(s)
  T. Yamada, K. Makihara, M. Ikada and S. Miyazaki
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  東北大学
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Impact of Remote H2 Plasma on Surface Roughness of 4H-SiC(0001)
- Author(s)
  T. Nguyen, H. Zhang, D. Takeuchi, A. Ohta, K. Makihara, H. Murakami, and S. Miyazaki
- Organizer
  International Union Material Research Society - International Conference in Asia 2014
- Place of Presentation
  福岡
- Year and Date
  2014-08-24 – 2014-08-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] リモート水素プラズマ支援によるFeシリサイドナノドットの高密度一括形成と磁化特性評価
- Author(s)
  張海、牧原克典、大田晃生、壁谷悠希、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] High Density Formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasma
- Author(s)
  H. Zhang, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki
- Organizer
  27th International Microprocesses and Nanotechnology Conference
- Place of Presentation
  福岡
- Year and Date
  2014-11-04 – 2014-11-07
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] FePtナノドット/極薄SiO2層における電子輸送特性の外部磁場依存性
- Author(s)
  壁谷悠希、大田晃生、牧原克典、宮崎誠一
- Organizer
  第75回秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Mnナノドット埋め込みSiリッチ酸化膜の抵抗変化特性
- Author(s)
  荒井崇、大田晃生、牧原克典、宮崎誠一
- Organizer
  第75回秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 外部磁場がFePt合金ナノドットへの電子注入特性に及ぼす影響
- Author(s)
  満行優介、壁谷悠希、張海、大田晃生、牧原克典、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] リモート水素プラズマ支援によるMn-Ge系ナノドットの高密度一括形成
- Author(s)
  温映輝、牧原克典、大田晃生、宮崎誠一
- Organizer
  第75回秋季応用物理学会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Formation and Characterization of High Density FeSi Nanodots on SiO2 Induced by Remote
- Author(s)
  K. Makihara, H. Zhang, A. Ohta, S. Miyazaki
- Organizer
  ７th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  名古屋大学
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] 不純物添加がSi量子ドット多重集積構造のEL特性に及ぼす影響
- Author(s)
  山田敬久、牧原克典、池田弥央、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Photoluminescence Study of Si Quantum Dots with Ge Core
- Author(s)
  K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki
- Organizer
  226th Meeting of The Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-06 – 2014-10-09
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] High Density Formation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasma
- Author(s)
  Y. Wen, K. Makihara, A. Ohta and S. Miyazaki
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  東北大学
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] P添加がGeコアSi量子ドットのPL特性に及ぼす影響
- Author(s)
  近藤圭悟、牧原克典、宮崎誠一
- Organizer
  第62回春季応用物理学会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-24246054
[Presentation] Characterization of Electron Emission from High Density Self-aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy
- Author(s)
  D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda, and S. Miyazaki
- Organizer
  226th Meeting of The Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-06 – 2014-10-09
- Data Source
  KAKENHI-PROJECT-24246054

1. HIROSE Masataka (10034406)

# of Collaborated Projects: 11 results

# of Collaborated Products: 0 results
2. MURAKAMI Hideki (70314739)

# of Collaborated Projects: 8 results

# of Collaborated Products: 54 results
3. HIGASHI Seiichiro (30363047)

# of Collaborated Projects: 5 results

# of Collaborated Products: 88 results
4. MAKIHARA Katsunori (90553561)

# of Collaborated Projects: 5 results

# of Collaborated Products: 230 results
5. KOHNO Atsushi (30284160)

# of Collaborated Projects: 5 results

# of Collaborated Products: 0 results
6. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
7. TAKAGI Shinichi (30372402)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
8. MASU Kazuya (20157192)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
9. 堀池靖浩 (20209274)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
10. 川崎昌博 (70110723)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
11. 大田晃生 (10553620)

# of Collaborated Projects: 3 results

# of Collaborated Products: 101 results
12. HORI Masaru (80242824)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
13. TABATA Hitoshi (00263319)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
14. HIRAMOTO Toshiro (20192718)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
15. YOKOYAMA Shin (80144880)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
16. 末宗幾夫 (00112178)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
17. KIKKAWA Takamaro (60304458)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. Shiraishi Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 長田昭義 (00164426)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 山西正道 (30081441)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 中山隆史 (70189075)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 初貝安弘 (80218495)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 中塚理 (20334998)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. KOTANI Hideo

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. HAYASHI Toshio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. SAKURADA Yuzo

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. IKEDA Mitsuhisa

# of Collaborated Projects: 1 results

# of Collaborated Products: 67 results
29. 三宅潔

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. 田岡紀之

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Miyazaki Seiichi 宮崎 誠一

Seiichi Miyazaki 宮崎 誠一

MIYAZAKI Seiichi 宮崎 誠一

Research Projects

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Co-Researchers

Fabrication and Characterization of Super-atom-like Hybrid Nanodots for New Functional DevicesPrincipal Investigator

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Formation of Self-Aligned Super-Atom-like Si-Ge based Quantum Dots and Characterization of Their Optical and Electrical PropertiesPrincipal Investigator

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磁性合金ナノドットハイブリッド集積によるスピン物性制御と新機能メモリ応用Principal Investigator

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Alignment Control and Electrical Coupling of High-density Si-based Quantum DotsPrincipal Investigator

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Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its ElectroluminescencePrincipal Investigator

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Integration of silicon-based nano-scalestructure and its functional memory device applicationPrincipal Investigator

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シリコン系スーパーアトム構造の高密度集積と新機能材料創成Principal Investigator

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PN制御シリコン系ナノ結晶集積構造におけるキャリア輸送とエレクトロルミネッセンスPrincipal Investigator

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The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state controlPrincipal Investigator

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Miyazaki Seiichi 宮崎誠一

Seiichi Miyazaki 宮崎誠一

MIYAZAKI Seiichi 宮崎誠一