AMANO HIROSHI 天野浩

… Alternative Names

天野浩アマノヒロシ

AMANO Hiroshi 天野浩

矢野浩ヤノヒロシ

Less

Researcher Number	60202694
Other IDs
External Links
Affiliation (Current)	2025: 名古屋大学, 未来材料・システム研究所, 教授
Affiliation (based on the past Project Information) *help	2022 – 2024: 名古屋大学, 未来材料・システム研究所, 教授 2018 – 2020: 名古屋大学, 未来材料・システム研究所, 教授 2015 – 2016: 名古屋大学, 未来材料・システム研究所, 教授 2015: 名古屋大学, 未来材料システム研究所, 教授 2010 – 2015: Meijo University, 工学研究科, 教授 … More 2014: 名古屋大学, 工学(系)研究科(研究院), 教授 2012: 名古屋大学, 大学院・工学研究科, 教授 2012: 名古屋大学, 工学(系)研究科(研究院), 教授 2010: 名古屋大学, 理工学部, 教授 2003 – 2009: 名城大学, 理工学部, 教授 1998 – 2001: Meijo University Fac.Sci.& Technol.Associate Professor, 理工学部, 助教授 1993 – 1997: 名城大学, 理工学部, 講師 1991: 名古屋大学, 工学部, 助手 1988 – 1989: 名古屋大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Electronic materials/Electric materials / Electronic materials/Electric materials / Basic Section 30010:Crystal engineering-related / Basic Section 21060:Electron device and electronic equipment-related / Electronic materials/Electric materials / Medium-sized Section 21:Electrical and electronic engineering and related fields / Applied materials science/Crystal engineering / Engineering / Science and Engineering / Science and Engineering / Medical systems … More Except Principal Investigator … More Applied materials science/Crystal engineering / Electron device/Electronic equipment / Electronic materials/Electric materials / 電子材料工学 / Microdevices/Nanodevices / Electronic materials/Electric materials / Science and Engineering / Applied materials Less
Keywords	Principal Investigator AlN / GaN / InGaN / AlGaN / ナノワイヤ / AIN / nonpolar / MOCVD / solar cells / nanorod … More / nanowire / Gallium Nitride / Group III nitride semiconductors / 有機金属化合物気相成長法 / ホモエピタキシャル成長 / 太陽電池 / 量子効率 / 紫外発光ダイオード / 内部量子効率 / III族窒化物半導体 / MOVPE / 結晶成長シミュレーション / バルク成長 / アンモノサーマル / Simulation / Ammonothermal / マイクロLEDディスプレイ / トップダウン方式 / ナノロッド / GaN on Si / Pulsed-mode growth / Si substrate / core-shell / アバランシェ / テラヘルツ波 / IMPATT格子 / Hi-Lo型 / ハイパワー電磁波源 / マイクロ波 / 高周波デバイス / IMPATT / Junction hetero FET / High breakdown voltage / High power switching / group III nitride / Normally off FET / p-GaN gate / オフ電流 / オン抵抗 / エンハンスメントモード / FET / SiC / 高耐圧 / ハイパワースイッチング素子 / GaN系FET / ノーマリーオフ / JHFET / p-GaNゲート / High temperature MOVPE / UV photo Diode / Sapphire / Epitaxial Lateral Overgrowth / UV Light Emitting_Diode / UV Laser Diode / 紫外レーザダイオード / 超高温MOVPE / 紫外フォトダイオード / サファイア / ELO / 県外レーザダイオード / Two dimensional electron gas / Microwave FET / UV detector / Bright blue light emitting diode / UV laser diode / Multi quantum well structure / 鏡像転位 / 転位応力 / 貫通転位 / 鏡像効果 / 透過電子顕微鏡 / 応力 / 貫通転位密度 / Bulk GaN / HVPE / MBE / OMVPE / Homoepitaxy / Low dimensional structure / Light Emittting Diode / Laser Diode / 量子井戸構造 / GaN基板 / バルクGaN / ハイドライド気相成長法 / 分子線エピタキシ-法 / 低次元量子構造 / III族窒化物 / 電子線励起電流 / 電子線励起深紫外レーザ / ソーラーブラインド紫外線検出器 / バルクAlN / ナノカーボン電極 / 分極半導体 / グラフェン / カーボンナノチューブ / 低加速電圧SEM / 分極電荷エンジニアリング / 電子線ホログラフィ / バルクAlN基板 / 深紫外発光素子 / 深紫外 / 分極ドーピング / 熱処理 / ナノカーボン / 結晶成長その場観察 / 電気・電子材料 / 超格子 / PA MBE / LED / 窒素ラジカル / PAMBE / 熱力学 / 圧力印加MOVPE / 可視長波長LED / 青色LED / 緑色LED / 加圧MOVPE / 圧力印加有機金属化合物気相成長法 / 可視長波長 LED / 結晶成長 / レーザダイオード / シミュレーション / 転位 / 原子ステップ / 横方向成長 / 高温MOVPE / AIN基板 / 昇華法 / 結晶欠陥 / p型 / 窒化アルミニウム / 紫外線レーザ / 低転位化 / 発光効率 / デバイスシミュレータ / 紫外半導体レーザ / 低転位 / 紫外LD / 紫外LED / LED・LD / UV・DUV / 発光ダイオード / 紫外線 / 光線治療 / MOVPE法 / 表面泳動 / ハイパワーレーザー / SHG / FIB加工 / 混晶 / アップコンバージョン / 二次高調波 / 真空紫外 / レーザーダイオード / 屈折率 / GaInN DH / 光励起室温誘導放出 / 面発光誘導放出 / GaN DH … More Except Principal Investigator III族窒化物半導体 / GaN / MOVPE / Group III nitride semiconductors / 窒化アルミニウム / 結晶成長 / 有機金属化合物気相成長法 / 紫外線検出器 / III族窒化物 / ヘテロエピタキシャル成長 / 高周波パワーデバイス / 電子デバイス・電子機器 / ヘテロ接合 / 電界効果トランジスタ / ダイヤモンド / LED / 半導体物性 / ワイドギャップ半導体 / 窒化物半導体 / 酸化ハフニウム / 酸化ジルコニウム / 酸化アルミニウム / ノーマリオフ型 / スパッタ法 / パワーデバイス / 電子デバイス / 原子層体積成長法 / ゲート絶縁膜 / MOSFET / Low density threading dislocation / Green laser diode / Metalorganic vapor phase epitaxy / Laser diode / Mass transport / 低転位 / 緑色レーザダイオード / レーザダイオード / マストランスポート / Photo-cell / pn-diode / Photodetector / Ultraviolet / Widegap Semiconductor / Group III nitride / 漏れ電流 / 高抵抗 / メサ / pn接合 / 光導電セル / pnダイオード / 光検出器 / 紫外線 / Two dimensional electron gas / Microwave FET / UV detector / Bright blue light emitting diode / UV laser diode / Multi quantum well structure / マイクロ波素子 / UVフォトダイオード / 短波長レーザダイオード / 量子井戸レーザ / 分子線エピタキシ-法 / 量子閉じこめシュタルク効果 / 低次元量子構造 / 紫色レーザーダイオード / 集束イオンビームエッチング / AlInN / 高精度X線回折 / GaInN多重量子井戸 / 二次元電子ガス / マイクロ波電界効果トランジスタ / 多重量子井戸 / 高輝度青色発光ダイオード / 紫外線レーザーダイオード / Exciton / HVPE / Si substrate / heteroepitaxy / Hetero epitaxy / 6H-SiC / Si / AlN Buffer / 大型単結晶 / ヘテロエピタキシ- / 励起子発光 / HVPE法 / シリコン基板 / カソードルミネッセンス / MIS構造 / Zn添加 / バッファ層 / 青色LED / A1GaN / 多層構造 / p形GaN / Mg添加 / カソ-ドルルミネッセンス / pn接合形青色LED / GaAlN / 双晶 / STEM / フォトルミネッセンス / InGaN / ナノワイヤ / 量子細線 / 半導体超微細化 / MBE / エッチング / リソグラフィー / 発光ダイオード / Moth-Eye / moth-eye / ナノ構造 / SiC / 窒化物 / 光制御 / 光取り出し効率 / モスアイ構造 / 電子線露光 / 光取出し効率 / 半導体 / 発光素子 / シリコン / 超高速情報処理 / 電子デバイス・機器 / MBE,エピタキシャル / 選択成長 / 有機金属分子線成長 / マイクロチャンネルエピタキシー / 格子欠陥 / 窒化ガリウム / MBEエピタキシャル / 光・電子集積回路 / 電気・電子材料 / バンドギャップ / 窒化インジウム / 発光デバイス / 赤外 / 紫外 / 光デバイス / コドープ / アクセプタ不純物 / p型 / Potcal Flow Channel / AlN / Intermediote layer / Heteroepitaxy / AlGaN on Si / GaN on Si / AlGaN / InN / ヘテロエピタキシ / 低温成長 Less

High-Power Coherent THz Source Based on GaN IMPATTsPrincipal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  2022 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Nagoya University
Growth of high-quality bulk GaN substrate by ammonothermal methodPrincipal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Nagoya University
nGaN nanorod-based energy-harvesting/energy-saving devices/systemsPrincipal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Nagoya University
無触媒窒化物系ナノワイヤの有機金属化合物気相成長と太陽光発電素子応用Principal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  2016
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
無触媒窒化物系ナノワイヤの有機金属化合物気相成長と太陽光発電素子応用Principal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devicesPrincipal Investigator
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Nagoya University
Energy Saving Normally-off p-Channel Diamond FET with High-Current Operation
- Principal Investigator
  
  Imura Masataka
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Development of bridged nitride semiconductor nanowire LED on Si substrate
- Principal Investigator
  
  HONDA Yoshio
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Nagoya University
Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxyPrincipal Investigator
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2011
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Development of AlN/Diamond Heterojunction Field Effect Transistor
- Principal Investigator
  
  IMURA Masataka
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute for Materials Science
Growth of high-quality thick InGaN by raised-pressure MOVPEPrincipal Investigator
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Watt class high power ultraviolet laser diodePrincipal Investigator
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2006 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Meijo University
Optoelectronics Frontier by Nitride Semiconductor-Ultimate Utilization of Nitride Semiconductor Material Potential-
- Principal Investigator
  
  NANISHI Yasushi
- Project Period (FY)
  2006 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Ritsumeikan University
Growth of dislocation-free GaN on Si substrates for long-life optical devices in opto-electronic integrated circuits
- Principal Investigator
  
  NARITSUKA Shigeya
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meijo University
Study of nanostructure fabrication technology for light-wave control
- Principal Investigator
  
  KAMIYAMA Satoshi
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Meijo University
High-Efficiency Nitride-based Power Devices in the Next GenerationPrincipal Investigator
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meijo University
紫外発光ダイオードを用いた皮膚病治療システムPrincipal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Medical systems
- Research Institution
  Meijo University
サファイア基板上へのレーザアシスト超高品質AlNエピタキシャル成長Principal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  2003
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Meijo University
Defect reduction of super widegap semiconductor AlN by high temperature metalorganic vapor phase epitaxy and device applicationsPrincipal Investigator
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Meijo University
光励起及び結合長制御不純物共添加による超低抵抗p型III族窒化物の作製
- Principal Investigator
  
  赤崎勇
- Project Period (FY)
  2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Meijo University
Fabrication of nitride-based zero dimensional structure by mass-transport and green laser diode
- Principal Investigator
  
  AKASAKI Isamu
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Meijo University
Reduction of threading dislocations in group III nitride grown by vapor phase epitaxy and in-situ monitoring of the grown-in stressPrincipal Investigator
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  MEIJO UNIVERSITY
全固体式真空紫外レーザーの実現Principal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meijo University
Fabrication of super sensitive ultraviolet photodetector
- Principal Investigator
  
  AKASAKI Isamu
- Project Period (FY)
  1997 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meijo University
Study on the fabrication of group III nitride based devices operated in the uncultivated region
- Principal Investigator
  
  AKASAKI Isamu
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  MEIJO UNIVERSITY
Study on the fabrication and properties of low dimensional structure based on group III nitride semiconductors on GaN substratesPrincipal Investigator
- Principal Investigator
  
  AMANO Hiroshi
- Project Period (FY)
  1995 – 1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  MEIJO UNIVERSITY
Study on the growth of large scale bulk group III nitrides on silicon substrates
- Principal Investigator
  
  AKASAKI Isamu
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  MEIJO UNIVERSITY
シリコン基板上への窒化物半導体結晶成長
- Principal Investigator
  
  AKASAKI Isamu
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Meijo University
窒化物半導体極短波長面発光レーザの研究Principal Investigator
- Principal Investigator
  
  天野浩
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Meijo University
窒化物ワイドギャップ半導体の結晶成長の低温化に関する研究
- Principal Investigator
  
  平松和政
- Project Period (FY)
  1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  Nagoya University
高性能GaN系青色LEDの試作研究
- Principal Investigator
  
  赤崎勇
- Project Period (FY)
  1987 – 1989
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  Nagoya University

[Book] ワイドギャップ半導体　あけぼのから最前線へ2013
- Author(s)
  天野　浩
- Total Pages
  396
- Publisher
  培風館
- Data Source
  KAKENHI-PROJECT-22246004
[Book] Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga, In)N films on lattice-mismatched substrates Wiley-VCH Verlag GmbH & Co.KGaA(Editor : T.Paskova)2008
- Author(s)
  H.Amano, T.Kawashima, D.Iida, M.Imura, M.Iwaya, S.Kamiyama, I.Akasaki
- Publisher
  Nitrides with Nonpolar Surfaces
- Data Source
  KAKENHI-PLANNED-18069011
[Book] Nitrides with Nonpolar Surfaces, Metalorganic vapor phase epitaxial growth of nonpolar A1(Ga, In)N films on lattice-mismatched substrates Editor(s) : T. Paskova, 108-1182008
- Author(s)
  H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
- Total Pages
  464
- Publisher
  Wiley-VCH Verlag GmbH & Co. KGaA
- Data Source
  KAKENHI-PLANNED-18069011
[Book] Nitrides with Nonpolar Surfaces, "Metalorganic vapor phase epitaxial growth of nonpolar Al(Ga,In)N films on lattice-mismatched substrates"2008
- Author(s)
  H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
- Total Pages
  464
- Publisher
  Wiley-VCH Verlag GmbH & Co. KGaA (Editor(s): T.Paskova)
- Data Source
  KAKENHI-PLANNED-18069011
[Book] LED革新のための最新技術と展望, 第2章第2節第1項, GaNの成長・低転位化・実用状況・基板欠陥とGaN膜欠陥の相関, pp.34-522008
- Author(s)
  天野浩
- Total Pages
  709
- Publisher
  情報機構
- Data Source
  KAKENHI-PLANNED-18069011
[Book] Advances in Light Emitting Materials, Edited by Bo Monemar, Martin Kittler and Hermann Grimmeisss, AlN and AlGaN by MOVPE for UV Light Emitting Devices pp.175-2102008
- Author(s)
  H. Amano, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
- Total Pages
  278
- Publisher
  Trans Technical Publications
- Data Source
  KAKENHI-PLANNED-18069011
[Book] Wide Bandgap Semiconductors 2. 3. 1 Doping Technology, pp. 77-79, 3. 5. 3 Advances in UV Laser Diodes, pp. 206-207, Total 460 pages, Editors Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu2007
- Author(s)
  Hiroshi Amano
- Total Pages
  460
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-18206036
[Book] Wide Bandgap Semiconductors 2.3.1 Doping Technology, pp.77-79, 3.5.3 Advances in UV Laser Diodes, pp.206-207, Total 460 pages, Editors Kiyoshi Takahashi, Akihiko Yoshikawa, Adarsh Sandhu2007
- Author(s)
  Hiroshi Amano
- Total Pages
  460
- Publisher
  Springer
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Book] 高周波半導体材料・デバイスの新展開、監修 : 佐野芳明、奥村次徳、第2章 III族窒化物半導体のMOVPE技術、pp.80-862006
- Author(s)
  天野浩
- Total Pages
  266
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18206036
[Book] 高周波半導体材料・デバイスの新展開、監修:佐野芳明、奥村次徳、第2章 III族窒化物半導体のMOVPE技術、pp.80-862006
- Author(s)
  天野浩
- Publisher
  シーエムシー出版
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Book] "Nitride Semiconductors", Handbook on Materials and Devices, Edited by P.Ruterana,M.Albrecht,J.Neugebauer2003
- Author(s)
  H.Amano
- Total Pages
  664
- Publisher
  Wiley-VCH Verlag GmbH&Co. KGaA, Weinheim
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] 15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W2024
- Author(s)
  Kawasaki Seiya、Kumabe Takeru、Deki Manato、Watanabe Hirotaka、Tanaka Atsushi、Honda Yoshio、Arai Manabu、Amano Hiroshi
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 71 Issue: 3 Pages: 1408-1415
- DOI
  10.1109/ted.2023.3345822
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1582, KAKENHI-PROJECT-22H00213
[Journal Article] Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz2023
- Author(s)
  Kawasaki Seiya、Kumabe Takeru、Ando Yuto、Deki Manato、Watanabe Hirotaka、Tanaka Atsushi、Honda Yoshio、Arai Manabu、Amano Hiroshi
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 8 Pages: 1328-1331
- DOI
  10.1109/led.2023.3285938
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22KJ1582, KAKENHI-PROJECT-22H00213
[Journal Article] Boundary Conditions for Simulations of Fluid Flow and Temperature Field during Ammonothermal Crystal Growth?A Machine-Learning Assisted Study of Autoclave Wall Temperature Distribution2021
- Author(s)
  Schimmel Saskia、Tomida Daisuke、Saito Makoto、Bao Quanxi、Ishiguro Toru、Honda Yoshio、Chichibu Shigefusa、Amano Hiroshi
- Journal Title
  
  Crystals
  
  Volume: 11 Issue: 3 Pages: 254-254
- DOI
  10.3390/cryst11030254
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19F19752
[Journal Article] Numerical Simulation of Ammonothermal Crystal Growth of GaN?Current State, Challenges, and Prospects2021
- Author(s)
  Schimmel Saskia、Tomida Daisuke、Ishiguro Tohru、Honda Yoshio、Chichibu Shigefusa、Amano Hiroshi
- Journal Title
  
  Crystals
  
  Volume: 11 Issue: 4 Pages: 356-356
- DOI
  10.3390/cryst11040356
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19F19752
[Journal Article] Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers2020
- Author(s)
  Hainey Mel、Robin Yoann、Avit Geoffrey、Amano Hiroshi、Usami Noritaka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 535 Pages: 125522-125522
- DOI
  10.1016/j.jcrysgro.2020.125522
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17F17366, KAKENHI-PROJECT-18F18347
[Journal Article] Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si (001) with a directionally sputtered AlN buffer layer2017
- Author(s)
  Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 468 Pages: 547-551
- DOI
  10.1016/j.jcrysgro.2016.11.116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16F14366
[Journal Article] Effect of V/III ratio on the surface morphology and electrical properties of m-plane (1010) GaN homoepitaxial layers2017
- Author(s)
  Ousmane 1 Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 468 Pages: 552-556
- DOI
  10.1016/j.jcrysgro.2016.12.012
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16F14366
[Journal Article] III-nitride core-shell nanorod array on quartz substrates2017
- Author(s)
  Si-Young Bae, Jung-Wook Min,Hyeong-Yong Hwang, Kaddour Lekhal, Ho-Jun Lee, Young-Dahl Jho, Dong-Seon Lee, Yong-Tak Lee, Nobuyuki Ikarashi, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Scientific Reports
  
  Volume: 7 Issue: 1 Pages: 45345-45345
- DOI
  10.1038/srep45345
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Journal Article] Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode2016
- Author(s)
  B. O. Jung, S. Y. Bae, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, H. Amano
- Journal Title
  
  Nanoscale Research Letters
  
  Volume: 11(1) Issue: 1 Pages: 1-10
- DOI
  10.1186/s11671-016-1441-6
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366
[Journal Article] Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy2016
- Author(s)
  Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda and Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146522
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Highly elongated vertical GaN nanorod arrays on Si substrates with AlN seed layer by pulsed-mode metalorganic vapor2016
- Author(s)
  S. Y. Bae , B. O. Jung , K. Lekhal , S. Y. Kim , J. Y. Lee , D. S. Lee , M. Deki , Y. Honda and H. Amano
- Journal Title
  
  CrysEngComm
  
  Volume: 18 Issue: 9 Pages: 1505-1514
- DOI
  10.1039/c5ce02056e
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366, KAKENHI-PROJECT-25000011
[Journal Article] Improved crystal quality of semipolar (10-13) GaN on Si(001) substrates using AlN/GaN superlattice interlayer2016
- Author(s)
  Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Tadashi Mitsunari, Akira Tamura, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 454 Pages: 114-120
- DOI
  10.1016/j.jcrysgro.2016.09.004
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16F14366
[Journal Article] Structural and optical study of core–shell InGaN layers of nanorod arrays2016
- Author(s)
  S. Y. Bae , B. O. Jung , K. Lekhal , D. S. Lee , M. Deki , Y. Honda and H. Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FG03-05FG03
- DOI
  10.7567/jjap.55.05fg03
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366
[Journal Article] Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering2016
- Author(s)
  Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Tadashi Mitsunari, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, and Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146505
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy2016
- Author(s)
  K. Lekhal, S. Y. Bae, H. J. Lee, T. Mitsunari, A. Tamura, M. Deki, Y. Honda, H. Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146522
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-14F04366
[Journal Article] Growth of semipolar (1-101) high-indium-content InGaN quantum wells using InGaN tilting layer on Si(001)2016
- Author(s)
  Maki Kushimoto, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE2016
- Author(s)
  Kaddour Lekhal, Si-Young Bae, Ho-Jun Lee, Tadashi Mitsunari, Akira Tamura, Manato Deki, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 447 Pages: 55-61
- DOI
  10.1016/j.jcrysgro.2016.05.008
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16F14366
[Journal Article] Nobel Lecture : Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation2015
- Author(s)
  Hiroshi Amano
- Journal Title
  
  Review of Modern Physics
  
  Volume: 87 Issue: 4 Pages: 1133-1138
- DOI
  10.1103/revmodphys.87.1133
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum2015
- Author(s)
  S. Y. Bae, B. O. Jung, K. Lekhal, D. S. Lee, M. Deki, Y. Honda and H. Amano
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55
- NAID
  210000146528
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges2015
- Author(s)
  Toshiki Yasuda, Kento Hayashi, Syouta Katsuno, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, and Hiroshi Amano
- Journal Title
  
  Physica Status Solidi (a)
  
  Volume: 212 Issue: 5 Pages: 920-924
- DOI
  10.1002/pssa.201431730
- Description
  オンラインのみ
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-26286045
[Journal Article] Highly ordered catalyst-free InGaN/GaN core-shell architecture arrays with expanded active area region2015
- Author(s)
  Jung Byung Oh, Bae Si-Young, Kim Sang Yun, Lee Seunga, Lee Jeong Yong, Lee Dong-Seon, Kato Yoshikhiro, Honda Yoshio, Amano Hiroshi
- Journal Title
  
  Nano Energy
  
  Volume: 11 Pages: 294-303
- DOI
  10.1016/j.nanoen.2014.11.003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14F04366, KAKENHI-PROJECT-25000011
[Journal Article] Development of underfilling and encapsulation for deep-ultraviolet LEDs2015
- Author(s)
  Kiho Yamada, Yuuta Furusawa, Shoko Nagai, Akira Hirano, Masamichi Ippommatsu, Ko Aosaki, Naoki Morishima, Hiroshi Amano and Isamu Akasaki Show affiliations
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 1 Pages: 012101-012101
- DOI
  10.7567/apex.8.012101
- NAID
  210000137346
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Optically pumped lasing properties of (1-101) InGaN/GaN stripe multiquantum wells2015
- Author(s)
  Maki Kushimoto
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 2 Pages: 022702-022702
- DOI
  10.7567/apex.8.022702
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-14J03143, KAKENHI-PROJECT-24686041, KAKENHI-PROJECT-25000011
[Journal Article] 分極制御AlGaN : 層設計と結晶成長2014
- Author(s)
  竹内哲也、岩谷素顕、上山智、天野浩、赤﨑勇
- Journal Title
  
  日本結晶成長学会誌
  
  Volume: 41 Pages: 21-32
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique2014
- Author(s)
  Byung Oh Jung, Si-Young Bae, Yoshihiro Kato, Masataka Imura, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  CrystEngComm
  
  Volume: 16 Issue: 11 Pages: 2273-2282
- DOI
  10.1039/c3ce42266f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14F04366, KAKENHI-PROJECT-25000011
[Journal Article] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
- Author(s)
  勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 赤﨑勇, 天野浩
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 114 Pages: 75-80
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Stacking 10 nm図 4:STEM 観察による InGaN ナノワイヤにおける双晶図 5 :InGaN ナノワイヤにおける双晶密度と積分 PL 強度の関係1011021034 1055 1056 1057 1058 105Integrated PL intensity (a.u.)Density of stacking faults (/cm)図 6:HOPG 基板上 GaN ナノワイヤ1μm faults and luminescence property of In- GaN nanowires2013
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] GaN nanowires grown on a graphite substrate by RF-MBE2013
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Stacking faults and luminescence property of In- GaN nanowires2013
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Pages: 1-4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination2013
- Author(s)
  M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <11-20> and <1-100> Zone-Axes of AlN for Polarity Determination2013
- Author(s)
  M. Imura, U. Gautam, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] GaN nanowires grown on a graphite substrate by RF-MBE2013
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Combination of Indium-in Oxide and SiO_2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes2013
- Author(s)
  Yuko Matsubara, Tomoaki Yamada, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Journal Title
  
  physica status solidi C
  
  Volume: 10 Issue: 11 Pages: 1537-1540
- DOI
  10.1002/pssc.201300265
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25000011
[Journal Article] Growth of InGaN Nanowires on a (111)Si Substrate by RF-MBE2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  phys. stat. sol. (c)
  
  Volume: 9 Issue: 3-4 Pages: 646-649
- DOI
  10.1002/pssc.201100446
- NAID
  110008726018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Progress and prospect of the growth of wide-band-gap group III nitrides: development of the growth method for single-crystal bulk GaN2012
- Author(s)
  Hiroshi Amano
- Journal Title
  
  Oyo Butsuri
  
  Volume: 81 Pages: 455-463
- NAID
  10030594790
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246004
[Journal Article] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  phys. stat. sol
  
  Volume: 9 Pages: 646-649
- NAID
  110008726018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23651146
[Journal Article] Development of AlN/diamond heterojunction field effect transistors2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
- Journal Title
  
  Diamond and Related Materials
  
  Volume: 5 Pages: 206-209
- DOI
  10.1016/j.diamond.2012.01.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] 窒化物ワイドギャップ半導体の現状と展望-バルク GaN 単結晶成長技術開発の観点から2012
- Author(s)
  天野浩
- Journal Title
  
  応用物理
  
  Volume: 81 Pages: 455-463
- NAID
  10030594790
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22246004
[Journal Article] Development of AlN/diamond heterojunction field effect transistors2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, T. Nagata, M. Y. Liao, Y. Koide, J. Yamamoto, K. Ban, M. Iwaya, and H. Amano
- Journal Title
  
  Diam. Relat. Mat.
  
  Volume: 24 Pages: 206-209
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method2011
- Author(s)
  Masayasu Yamakawa, Kazuki Murata, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Masanobu Azuma
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- NAID
  10028209940
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Demonstration of Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
- Journal Title
  
  Physica Status Solidi (RRL)
  
  Volume: 5 Issue: 3 Pages: 125-127
- DOI
  10.1002/pssr.201105024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Demonstration of diamond field effect transistors by AlN/diamond heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, E. Watanabe, M. Y. Liao, Y. Koide, and H. Amano
- Journal Title
  
  Phys. Status Solidi-Rapid Res. Lett.
  
  Volume: 5 Pages: 125-127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760319
[Journal Article] Spontaneous formation of highly regular superlattice structure in InGa N epilayers grown by molecular beam epitaxy2011
- Author(s)
  Z.H.Wu, Y.Kawai, Y.-Y.Fang, C.Q.Chen, H.Kondo, M.Hori, Y.Honda, M.Yamaguchi, H.Amano
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98 Issue: 14
- DOI
  10.1063/1.3574607
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23656015
[Journal Article] Freestanding Highly Crystalline Single Crystal AlN Substrates Grown by a Novel Closed Sublimation Method2011
- Author(s)
  M.Yamakawa, K.Murata, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, M.Azuma
- Journal Title
  
  Applied Physics Express 4
- NAID
  10028209940
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells2011
- Author(s)
  Kazuhito Ban, Jun-ichi Yamamoto, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 4
- NAID
  10028210215
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy2011
- Author(s)
  Z. H. Wu, Y. Kawai, Y.-Y. Fang, C. Q. Chen, H. Kondo, M. Hori, Y. Honda, M. Yamaguchi, and H. Amano
- Journal Title
  
  Applied Physics Letters
  
  Volume: 98
- URL
  http://dx.doi.org/10.1063/1.3574607
- Data Source
  KAKENHI-PROJECT-23656015
[Journal Article] Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer2011
- Author(s)
  K.Takeda, K.Nagata, T.Ichikawa, K.Nonaka, Y.Ogiso, Y.Oshimura, M.Iwaya, T.Takeuchi, S.Kamiyama, I.Akasaki, H.Amano, H.Yoshida, M.Kuwabara, Y.Yamashita, H.Kan
- Journal Title
  
  physica status solidi (c)
  
  Volume: 8 Pages: 464-466
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy2010
- Author(s)
  D.Iida, K.Tamura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 312 Pages: 3131-3135
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates2010
- Author(s)
  Z.Wu, K.Nonaka, Y.Kawai, T.Asai, F.A.Ponce, C.Chen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027441702
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Defects in highly Mg-doped AlN2010
- Author(s)
  K.Nonaka, T.Asai, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 207 Pages: 1299-1301
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-output-power AlGaN/GaN ultraviolet-light-emitting diodes by activation of Mg-doped p-type AlGaN in oxygen ambient2010
- Author(s)
  K.Nagata, T.Ichikawa, K.Takeda, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (a)
  
  Volume: 207 Pages: 1393-1396
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes2010
- Author(s)
  Cyril Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 3
- NAID
  10027014973
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer2010
- Author(s)
  T.Asai, K.Nonaka, K.Ban, K.Nagata, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (c)
  
  Volume: 7 Pages: 2101-2103
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Atomic layer epitaxy of AlGaN2010
- Author(s)
  Kentaro Nagamatsu, Daisuke Iida, Kenichiro Takeda, Kensuke Nagata, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Journal Title
  
  physica status solidi (c)
  
  Volume: 7 Pages: 2368-2370
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Internal quantum efficiency of GaN/AlGaN-based multi quantum wells on different dislocation densities underlying layers2010
- Author(s)
  K.Takeda, F.Mori, Y.Ogiso, T.Ichikawa, K.Nonaka, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  physica status solidi (c)
  
  Volume: 7 Pages: 1916-1918
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Evidence for Two Mg Related Acceptors in GaN2009
- Author(s)
  Monemar, B., Paskov, P.P., Pozina, G., Hemmingsson, C., Bergman, J.P., Kawashima, T., Amano, H., Akasaki, I., Paskova, T., Figge, S., et al.
- Journal Title
  
  Physical Review Letters 102
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN2009
- Author(s)
  Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
- Journal Title
  
  Applied Physics Express 2
- NAID
  10025085540
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Activation energy of Mg in Al_<0.25>Ga_<0.75>N and Al_<0.5>Ga_<0.5>N2009
- Author(s)
  K.Nagamatsu, K.Takeda, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Phys.Status Solidi C 6
  
  Pages: 437-439
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Optimization of electrode configuration in large GaInN light-emitting diodes2009
- Author(s)
  落合渉、河合良介、鈴木敦志、岩谷素顕、天野浩、上山智、赤崎勇
- Journal Title
  
  Physica Status Solidi (C) Vol.6, Issue 6
  
  Pages: 1416-1419
- Data Source
  KAKENHI-PROJECT-18560353
[Journal Article] Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth2009
- Author(s)
  Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Markov, A.V., Yakimov, E.B., Vergeles, P.S., Amano, H., Kawashima, T.
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2923-2925
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Relaxation and recovery processes of Al_xGa_<1-x>N grown on AlN underlying layer2009
- Author(s)
  Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2850-2852
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Novel UV devices on high-quality AlGaN using grooved underlying layer2009
- Author(s)
  Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al.
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2860-2863
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Activation energy of Mg in a-plane Ga_<1-x>In_xN(0<x<0.17)2009
- Author(s)
  Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Physica Status Solidi B 246
  
  Pages: 1188-1190
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures.Impact of built-in polarization fields2009
- Author(s)
  Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P.O., Kamiyama, S., Amano, H., Akasaki, I.
- Journal Title
  
  Opto-Electronics Review 17
  
  Pages: 293-299
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-reflectivity Ag-based ohmic contacts for blue light-emitting diodes2009
- Author(s)
  河合良介、森俊晶、落合渉、鈴木敦志、岩谷素顕、天野浩、上山智、赤崎勇
- Journal Title
  
  Physica Status Solidi (C) Vol.6, Issue S2
- Data Source
  KAKENHI-PROJECT-18560353
[Journal Article] Strong emission from GaInN/GaN multiple quantum wells on high-crys talline-quality thick m-plane GaInN underlying layer on grooved GaN2009
- Author(s)
  Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Applied Physics Express 2
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films2009
- Author(s)
  Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Markov, A.V., Yugova, T.G., Petrova, E.A., Amano, H., Kawashima, T., Scherbatchev, K.D., Bublik, V.T.
- Journal Title
  
  Journal of Applied Physics 105
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Growth of thick GaInN on grooved(1011)GaN/(1012)4H-SiC2009
- Author(s)
  Matsubara, Tetsuya, Senda, Ryota, Iids, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2926-2928
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy2009
- Author(s)
  Iids, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2887-2890
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices2008
- Author(s)
  H. Amano, M. Imura, M. Iwaya, S. Kamiyama and I. Akasaki
- Journal Title
  
  Mater. Sci. Forum 590
  
  Pages: 175-210
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy2008
- Author(s)
  N. Kato, S. Sato, H. Sugimura, T. Sumii, N. Okada, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh
- Journal Title
  
  Phys, Stat. Sol. (c) 5
  
  Pages: 1559-1561
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates2008
- Author(s)
  M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 2308-2313
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices2008
- Author(s)
  H. Amano, M. Imura, M. Iwaya, S. Kamiyama, I. Akasaki
- Journal Title
  
  Mater. Sci. Forum 590
  
  Pages: 175-210
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-18069013
[Journal Article] Microstructure of threading dislocations caused by grain boundaries in AlN on sapphire substrates2008
- Author(s)
  M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh
- Journal Title
  
  Phys, Stat. Sol. (c) 5
  
  Pages: 1582-1584
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates2008
- Author(s)
  M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki and A. Bandoh
- Journal Title
  
  J. Crystal Growth 310
  
  Pages: 2308-2313
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] AlN and AlGaN by MOVPE for UV light emitting devices2008
- Author(s)
  H.Amano, M.Imura, M.Iwaya, S.Kamiyama, I.Akasaki
- Journal Title
  
  Mater.Sci.Forum 590
  
  Pages: 175-210
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE2008
- Author(s)
  K. Nagamatsu, N. Okada, N. Kato, T. Sumii, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Journal Title
  
  Phys. Stat. Sol. (c) 5
  
  Pages: 3048-3050
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Control of p-type conduction in a-plane Ga_<1-x>In_xN(0<x<0.10)grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy2008
- Author(s)
  Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 4996-4998
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Optimization of underlying layer and the device structure for group-III-nitride-based UV emitters on sapphire2008
- Author(s)
  K. Iida, H. Watanabe, K. Takeda, F. Mori, H. Tsuzuki, Y. Yamashita, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi and A. Bandoh
- Journal Title
  
  Phys, Stat. Sol. (c) 5
  
  Pages: 2142-2144
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of A1N on 6H-SiC substrates2008
- Author(s)
  M.Imura, H.Sugimura, N.Okada, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 2308-2313
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN2008
- Author(s)
  K. Nagamatsu, N. Okada, H. Sugimura, H. Tsuzuki, F. Mori, K. Iida, A. Bando, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Journal Title
  
  J. Crystal Growth 310
  
  Pages: 2326-2329
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Fabrication of enhancement-mode Al_xGa_<1-x>N/GaN junction heterostructure field-effect transistors with p-type GaN gate contact2007
- Author(s)
  T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, and I.Akasaki
- Journal Title
  
  phys.stat.sol. (c)4
  
  Pages: 2708-2711
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE2007
- Author(s)
  N.Okada, N.Kato, S.Sato, T.Sumii, N.Fujimoto, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 141-144
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Annihilation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio2007
- Author(s)
  M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 136-140
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers2007
- Author(s)
  M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada, . K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 257-260
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of A1N on trench-patterned AlN layers2007
- Author(s)
  M. Imura, K. Nakano, G. Narita, N. Fujimoto, N. Okada,. K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro T. Takagi, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 257-260
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio2007
- Author(s)
  M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 136-140
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers2007
- Author(s)
  M.Imura, K.Nakano, G.Narita, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 257-260
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy2007
- Author(s)
  M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 1458-1462
- NAID
  10018900504
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Epitaxial lateral overgrowth of AIN on trench-patterned AIN layers2007
- Author(s)
  M.Imura, K.Nakano, G.Narita, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 257-260
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Control of threshold voltage of enhancement-mode Al_xGa_<1-x>N/GaN junction heterostructure field-effect transistors using p-GaN gate contact2007
- Author(s)
  T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 115-118
- NAID
  10018704414
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Fabrication of enhancement-mode Al_XGa_(1-X) N/GaN junction heterostructure field-effect transistors with p-type GaN gate contact2007
- Author(s)
  T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  phys. stat. sol. (c)4
  
  Pages: 2708-2711
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate2007
- Author(s)
  K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
- Journal Title
  
  Phys. Stat. Sol. (a) 204
  
  Pages: 1848-1852
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification2007
- Author(s)
  N.Okada, N.Kato, S.Sato, T.Sumii, T.Nagai, N.Fujimoto, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Maruyama, T.Takagi, T.Noro, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 349-353
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Void assisted dislocation reduction in AlN and AlGaN by high temperature MOVPE2007
- Author(s)
  K. Balakrishnan, K. Iida, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  physica status solidi(c) 4
  
  Pages: 2272-2276
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Fabrication of enhancement-mode A1_xGa_<1-x>N/GaN junction heterostructure field-effecttransistors with p-type GaN gate contact2007
- Author(s)
  T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Journal Title
  
  phys. stat. sol. (c)4
  
  Pages: 2708-2711
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Microstructure of a-plane AlN grown on r-plane sapphire and on patterned AlN templates by metalorganic vapor phase epitaxy2007
- Author(s)
  N. Okada, M. Imura, T. Nagai, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  physica status solidi(c) 4
  
  Pages: 2528-2531
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE2007
- Author(s)
  N. Okada, N. Kato, S. Sato, T. Sumii, N. Fujimoto, M. Imura, K. Balak rishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Takagi, T. Noro and A. Bandoh
- Journal Title
  
  Journal of Crystal Growth 400
  
  Pages: 141-144
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Epitaxial lateral growth of m-plane GaN and Al_<0.18>Ga_<0.82>N on m-plane 4H-SiC and 6H-SiC substrates2007
- Author(s)
  T.Kawashima, T.Nagai, D.Iida, A.Miura, Y.Okadome, Y.Tsuchiya, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 261-264
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Influence of High Temperature in the Growth of Low Dislocation Content AIN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy2007
- Author(s)
  K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 46
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy2007
- Author(s)
  M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bandoh
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1458-1462
- NAID
  10018900504
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Control of threshold voltage of enhancement-mode Al_XGa_(1-X) N/GaN junction heterostructure field-effect transistors using p-GaN gate contact2007
- Author(s)
  T. Fujii, N. Tsuyukuchi, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 115-118
- NAID
  10018704414
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio2007
- Author(s)
  M.Imura, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 136-140
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Control of threshold voltage of enhancement-mode Al_xGa_1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate contact2007
- Author(s)
  T.Fujii, N.Tsuyukuchi, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 115-118
- NAID
  10018704414
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Epitaxial lateral overgrowth of Al_xGa_<1-x>N (x>0.2) on sapphire and its application to UV-B-light-emitting devices2007
- Author(s)
  K.Iida, T.Kawashima, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 265-267
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Microstructure in nonpolar m-plane GaN and AlGaN films2007
- Author(s)
  T.Nagai, T.Kawashima, M.Imura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 288-292
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-speed growth of AlGaN having high-crystalline quality and smooth surface by high-temperature MOVPE2007
- Author(s)
  N.Kato, S.Sato, T.Sumii, N.Fujimoto, N.Okada, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Maruyama, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 215-218
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures : influence of Al composition and Si doping2007
- Author(s)
  M.Esmaeili, H.Haratizadeh, B.Monemar, P.P.Paskov, P.O.Holtz, P.Bergman, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Nanotechnology 18
  
  Pages: 25401-25401
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Mg-doped high-quality Al_xGa_<1-x>N(x=0-1)grown by high-temperature metal-organic vapor phase epitaxy2007
- Author(s)
  M. Imura, N. Kato, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  physica status solidi(c) 4
  
  Pages: 2502-2505
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High-efficiency AlGaN based UV emitters grown on high-crystalline-quality AlGaN using grooved AlN layer on sapphire substrate2007
- Author(s)
  K. Iida, H. Watanabe, K. Takeda, T. Nagai, T. Sumii, K. Nagamatsu, T. Kawashima, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, A. Bandoh
- Journal Title
  
  physica status solidi(a) 204
  
  Pages: 1848-1852
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Annihiation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio2007
- Author(s)
  M. Imura, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi and A. Bando
- Journal Title
  
  Journal of Crystal Growth 400
  
  Pages: 136-140
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Annihilation mechanism of threading dislocations in AIN grown by growth form modification method using V/III ratio2007
- Author(s)
  M.Imura, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Journal of Crystal Growth 300
  
  Pages: 136-140
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Growth of High-Quality AlN with High Growth Rate by High Temperature MOVPE2006
- Author(s)
  N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solidi (To be published)
- Data Source
  KAKENHI-PROJECT-17650155
[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AIN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
- Author(s)
  M.Imura, K.Nakano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 8639-8643
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Growth of High-Quality AlN with High Growth Rate by High Temperature MOVPE2006
- Author(s)
  N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solidi (To be published)
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates2006
- Author(s)
  K.Nakano, M.Imura, G.Narita, T.Kitano, Y.Hirose, N.Fujimoto, N.Okada, T.Kawashima, K.Iida, K.Balakrishnan, M.Tsuda, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Physica Status Solidi (a) 203
  
  Pages: 1632-1635
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Breakthroughs in Improving Crystal Quality of GaN and Invention of the p-n Junction Blue-Light-Emitting Diode2006
- Author(s)
  I.Akasaki, H.Amano
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 9001-9010
- NAID
  40015182096
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Microstructure of thick AlN grown on sapphire by high-temperature MOVPE2006
- Author(s)
  M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solidi (a) 203
  
  Pages: 1626-1631
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT2006
- Author(s)
  Yoshikazu Hirose, Akira Honshio, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Michinobu Tsuda, Hiroshi Amano, Isamu Akasaki
- Journal Title
  
  IEICE Trans. Electron. E89-C
  
  Pages: 1064-1067
- NAID
  110007538789
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Microstructure of thick AlN grown on sapphire by high-temperature MOVPE2006
- Author(s)
  M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solidi (To be published)
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy2006
- Author(s)
  M.Imura, K.Nakano, T.Kitano, N.Fujimoto, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Applied Physics Letters 89
  
  Pages: 21901-21901
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Optical signatures of dopants in GaN2006
- Author(s)
  B.Monemar, P.P.Paskov, J.P.Bergman, A.A.Toropov, T.V.Shubina, S.Figge, T.Paskova, D.Hommel, A.Usui, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Materials Science in Semiconductor Processing 9
  
  Pages: 168-174
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact2006
- Author(s)
  N.Tsuyukuchi, K.Nagamatsu, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018158654
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire2006
- Author(s)
  M.Tsuda, H.Furukawa, A.Honshio, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 2509-2513
- NAID
  40007227459
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45,No.4a(未定)
- NAID
  40007227457
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
- Author(s)
  M.Imura, K.Nakano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 8639-8643
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate2006
- Author(s)
  M.Imura, A.Honshio, Y.Miyake, K.Nakano, N.Tsuchiya, M.Tsuda, Y.Okadome, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Physica B : Condensed Matter 376-377
  
  Pages: 491-495
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45, No.4a(未定)
- NAID
  40007227457
- Data Source
  KAKENHI-PROJECT-17650155
[Journal Article] Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells2006
- Author(s)
  B.Arnaudov, P.P.Paskov, H.Haratizadeh, P.O.Holtz, B.Monemar, S.Kamiyama, M.Iwaya, H.Amano, I.Akasaki
- Journal Title
  
  Physica Status Solidi (c) 3
  
  Pages: 523-1526
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Microstructure of thick AIN grown on sapphire by high-temperature MOVPE2006
- Author(s)
  M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solide (a) 233
  
  Pages: 1626-1631
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer2006
- Author(s)
  Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al.
- Journal Title
  
  Physics Status Solidi A 206
  
  Pages: 1199-1204
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT2006
- Author(s)
  Y.Hirose, A.Honshio, T.Kawashima, M.Iwaya, S.Kamiyama, M.Tsuda, H.Amano and I.Akasaki
- Journal Title
  
  IEICE Trans.Electron. E89-C
  
  Pages: 1064-1067
- NAID
  110007538789
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Microstructure of thick AlN grown on sapphire by high-temperature MOVPE2006
- Author(s)
  M.Imura, K.Nakano, T.Kitano, N.Fujimoto, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica.Status Solidi (a) 233
  
  Pages: 1626-1631
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact2006
- Author(s)
  N. Tsuyukuchi, K. Nagamatsu, Y. Hirose, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018158654
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors2006
- Author(s)
  S.F.Chichibu, A.Uedono, T.Onuma, B.A.Haskell, A.Chakraborty, T.Koyama, P.T.Fini, S.Keller, S.P.DenBaars, J.S.Speck, U.K.Mishra, S.Nakamura, S.Yamaguchi, S.Kamiyama, H.Amano, I.Akasaki, J.Han, T.Sota
- Journal Title
  
  Nature Materials 5
  
  Pages: 810-816
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High On/Off Ratio in Enhancement-Mode Al_xGa_<1-x>N/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact2006
- Author(s)
  T.Fujii, N.Tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018340710
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio2006
- Author(s)
  M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 8639-8643
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Growth of high-quality AlN at high growth rate by high-temperature MOVPE2006
- Author(s)
  N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica Status Solidi (c) 3
  
  Pages: 1617-1619
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells2006
- Author(s)
  H.Haratizadeh, B.Monemar, H.Amano
- Journal Title
  
  Physica Status Solidi (a) 203
  
  Pages: 149-153
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High On/Off Ratio in Enhancement-Mode Al_XGa_(1-X) N/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact2006
- Author(s)
  T. Fujii. N. Tsuyukuchi, M. Iwava. S. Kamivama. H. Amano, I. Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018340710
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT2006
- Author(s)
  Yoshikazu Hirose, Akira Honshio, takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Michinobu Tsuda, Hiroshi Amano, Isamu Akasaki
- Journal Title
  
  IEICE Trans. Electron. E89-C
  
  Pages: 64-1067
- NAID
  110007538789
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] A hydrogen-related shallow donor in GaN?2006
- Author(s)
  B.Monemar, P.P.Paskov, J.P.Bergman, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Physica B : Condensed Matter 376-377
  
  Pages: 460-463
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy2006
- Author(s)
  N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45
  
  Pages: 2502-2504
- NAID
  40007227457
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Okada, N.Fujimoto, T.Kitano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied Physics 45, No.4a
  
  Pages: 2502-2504
- NAID
  40007227457
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Low-leakage-current enhancement-mode AIGaN/GaN heterostructure field-effect transistor using p-type gate contact2006
- Author(s)
  N.Tsuyukuchi, K.Nagamatsu, Y.Hirose, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Critical aspects of high temperature MOCVD growth of AlN epilayers on 6H-SiC substrates2006
- Author(s)
  K.Balakrishnan, N.Fujimoto, T.Kitano, A.Bandoh, M.Imura, K.Nakano, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro, K.Shimono, T.Riemann, J.Christen
- Journal Title
  
  Physica Status Solidi (c) 3
  
  Pages: 1392-1395
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] X-ray diffraction reciprocal lattice space mapping of a-plane AlGaN on GaN2006
- Author(s)
  M.Tsuda, H.Furukawa, A.Honshio, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Physica Status Solidi (b) 243
  
  Pages: 1524-1528
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] High On/Off Ratio in Enhancement-Mode Al_xGa_1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-type GaN Gate Contact2006
- Author(s)
  T.Fujii, N.tsuyukuchi, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Japanese Journal of Applied Physics 45
- NAID
  10018340710
- Data Source
  KAKENHI-PROJECT-18206036
[Journal Article] Dominant shallow acceptor enhanced by oxygen doping in GaN2006
- Author(s)
  B.Monemar, P.P.Paskov, F.Tuomisto, K.Saarinen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, S.Kimura
- Journal Title
  
  Physica B : Condensed Matter 376-377
  
  Pages: 440-443
- Data Source
  KAKENHI-PLANNED-18069011
[Journal Article] Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy2006
- Author(s)
  N.Okada, N.Fujimoto, T.Kiano, G.Narita, M.Imura, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Japanese Journal of Applied physics 45、No.4a
  
  Pages: 2502-2504
- NAID
  40007227457
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Growth of high-quality AlN with high growth rate by high-temperature MOVPE2006
- Author(s)
  N.Fujimoto, T.Kitano, G.Narita, N.Okada, K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, K.Shimono, T.Noro, T.Takagi, A.Bandoh
- Journal Title
  
  Physica.Status Solidi (c) 3
  
  Pages: 1617-1619
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure2005
- Author(s)
  H.Kasugai, Y.Miyake, A.Honshio, S.Mishima, T.Kawashima, K.Iida, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, H.Kinoshita, H.Shiomi
- Journal Title
  
  Japanese Journal of Applied Physics 44,No.10
  
  Pages: 7414-7417
- NAID
  130004766017
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] High-quality Al_<0.12>Ga_<0.88>N with low dislocation density grown on facet-controlled Al_<0.12>Ga_<0.88>N by MOVPE2004
- Author(s)
  T.Kawashima, K.Iida, Y.Miyake, A.Honshio, H.Kasugai, M.Imura, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 377-380
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Study on the Seeded Growth of AlN Bulk Crystals by Sublimation2004
- Author(s)
  K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7448-7453
- NAID
  10014029896
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Study on the Seeded Growth of AIN Bulk Crystals by Sublimation2004
- Author(s)
  K.Balakrishnan, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, T.Takagi, T.Noro
- Journal Title
  
  Japanese Journal of Applied Physics 43
  
  Pages: 7448-7453
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Defect and stress control of AIGaN for fabrication of high performance UV light emitters2004
- Author(s)
  H.Amano, A.Miyazaki, K.Iida, T.Kawashima, M.Iwaya, S.Kamiyama, I.Akasaki, R.Liu, A.Bell, F.A.Ponce
- Journal Title
  
  Physica.Status solidi (a) (a)201
  
  Pages: 2679-2685
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Laser Diode of 350.9nm wavelength grown on sapphire substrate by MOVPE2004
- Author(s)
  K.Iida, T.Kawashima, A.Miyazaki, H.Kasugai, S.Mishima, A.Honshio, Y.Miyake, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 270-273
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth2004
- Author(s)
  A.Bell, R.Liu, U.K.Parasuraman, F.A.Ponce, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Applied Physics Letters
  
  Pages: 3417-3419
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Laser Diode of 350.9nm wavelength Grown on Sapphire substrate by MOVPE2004
- Author(s)
  K.Iida, T.Kawashima, A.Miyazaki, H.Kasugai, S.Mishima, A.Honshio, Y.Miyake, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Journal Title
  
  Journal of Crystal Growth 272
  
  Pages: 270-273
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Platelet Inversion Domains Induced by Mg-Doping in ELOG AlGaN Films2004
- Author(s)
  R.Liu, F.A.Ponce, D.Cherns, H.Amano, I.Akasaki
- Journal Title
  
  Materials Research Society Symposium Proceedings 798
  
  Pages: 765-770
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Defect and stress control of AlGaN for fabrication of high performance UV light emitters2004
- Author(s)
  H.Amano, A.Miyazaki, K.Iida, T.Kawashima, M.Iwaya, S.Kamiyama, I.Akasaki, R.Liu, A.Bell, F.A.Ponce
- Journal Title
  
  Physica.Status Solidi (a)201
  
  Pages: 2679-2685
- Data Source
  KAKENHI-PROJECT-15206003
[Journal Article] Defect and stress control of AlGaN for fabrication of high performance UV light emitters2004
- Author(s)
  H.Amano, A.Miyazaki, K.Iida, T.Kawashima, M.Iwaya, S.Kamiyama, I.Akasaki, R.Liu, A.Bell, F.A.Ponce
- Journal Title
  
  Physica.Status Solidi (a) 201
  
  Pages: 2679-2685
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Patent] 分極を有する半導体を用いた半導体光素子2013
- Inventor(s)
  竹内哲也、岩谷素顕、赤崎勇、天野浩
- Industrial Property Rights Holder
  名城大学
- Industrial Property Rights Type
  特許
- Filing Date
  2013-12-11
- Data Source
  KAKENHI-PROJECT-25000011
[Patent] 自立基板の製造方法、AlN自立基板及びIII族窒化物半導体デバイス2011
- Inventor(s)
  天野浩、岩谷素顕
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2011-060889
- Filing Date
  2011-03-18
- Data Source
  KAKENHI-PLANNED-18069011
[Patent] 発光素子、発光素子用サファイア基板、および発光素子用サファイア基板の製造方法2008
- Inventor(s)
  上山智、岩谷素顕、天野浩、赤崎勇、鈴木敦志、金子由基夫
- Industrial Property Rights Holder
  エルシード(株)
- Industrial Property Number
  2008-242943
- Filing Date
  2008-09-01
- Data Source
  KAKENHI-PROJECT-18560353
[Patent] 発光素子及びその製造方法2008
- Inventor(s)
  上山智, 岩谷素顕, 天野浩, 赤崎勇, 鈴木敦志, 寺前文晴, 北野司, 近藤俊行
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2008-283595
- Filing Date
  2008-11-04
- Data Source
  KAKENHI-PROJECT-18560353
[Patent] 発光素子、発光素子用サファイア基板及び発光素子用サファイア基板の製造方法2008
- Inventor(s)
  上山智, 岩谷素顕, 天野浩, 赤崎勇, 鈴木敦志, 金子由基夫
- Industrial Property Rights Holder
  エルシード(株)
- Industrial Property Number
  2008-242943
- Filing Date
  2008-09-22
- Data Source
  KAKENHI-PROJECT-18560353
[Patent] 発光素子及びその製造方法2008
- Inventor(s)
  上山智、岩谷素顕、天野浩、赤崎勇、鈴木敦志、寺前文晴、北野司、近藤俊行
- Industrial Property Rights Holder
  名城大学
- Industrial Property Number
  2008-283595
- Filing Date
  2008-11-04
- Data Source
  KAKENHI-PROJECT-18560353
[Patent] 板状の窒化アルミニウム単結晶の製造方法2007
- Inventor(s)
  天野浩、金近幸博、東正信
- Industrial Property Rights Holder
  (株)トクヤマ
- Industrial Property Number
  2007-303312
- Filing Date
  2007-11-22
- Data Source
  KAKENHI-PLANNED-18069011
[Patent] 窒化アルミニウム単結晶多角柱状体及びその製造方法2007
- Inventor(s)
  天野浩、金近幸博、東正信
- Industrial Property Rights Holder
  (株)トクヤマ
- Industrial Property Number
  2007-303311
- Filing Date
  2007-11-22
- Data Source
  KAKENHI-PLANNED-18069011
[Patent] 窒化物系半導体の気相成長方法とそれを用いた窒化物系半導体エピタキシャル基板並びに自立基板、及び半導体装置2006
- Inventor(s)
  津田道信, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Industrial Property Rights Holder
  京セラ株式会社、学校法人名城大学
- Filing Date
  2006-02-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Patent] 窒化化合物半導体基板及び半導体デバイス2006
- Inventor(s)
  天野浩、吉田冶正、高木康文、桑原正和
- Industrial Property Rights Holder
  浜松ホトニクス(株)
- Industrial Property Number
  2006-032950
- Filing Date
  2006-02-09
- Data Source
  KAKENHI-PLANNED-18069011
[Patent] 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置2006
- Inventor(s)
  津田道信, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Industrial Property Rights Holder
  京セラ株式会社、学校法人名城大学
- Filing Date
  2006-03-10
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Patent] 窒化物系化合物半導体の製造方法2005
- Inventor(s)
  天野浩
- Industrial Property Rights Holder
  名城大学
- Filing Date
  2005-11-14
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206003
[Presentation] マイクロ波帯Hi Lo型GaN IMPATTダイオードの設計および作製2023
- Author(s)
  川崎晟也, 隈部岳瑠, 出来真斗, 渡邉浩崇, 田中敦之, 本田善央, 新井学, 天野浩
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] p型分極ドープAlGaN層中における正孔移動度の制限要因2023
- Author(s)
  隈部岳瑠, 川崎晟也, 渡邉浩崇, 本田善央, 天野浩
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] 15 GHz GaN Hi-Lo IMPATT diodes with pulsed peak power of 25.5 W2023
- Author(s)
  Seiya Kawasaki, Takeru Kumabe, Manato Deki, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Manabu Arai and Hiroshi Amano
- Organizer
  14th International Conference on Nitride Semiconductors 2023 (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] Fabrication of GaN Hi-Lo IMPATT diode2023
- Author(s)
  Seiya Kawasaki, Takeru Kumabe, Manato Deki, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Manabu Arai and Hiroshi Amano
- Organizer
  WOCSDICE-EXMATEC 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] Tribute to our predecessor, the late Professor Isamu Akasaki, and the role of nitrides in establishing an earth-friendly, comfortable, convenient and people-friendly society2023
- Author(s)
  Hiroshi Amano
- Organizer
  14th International Conference on Nitride Semiconductors 2023 (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] HVPE growth for vertical GaN p-n junction diodes with high breakdown voltage2022
- Author(s)
  大西　一生、新田　州吾、本田　善央、天野　浩
- Organizer
  IWN2022
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] Mobility Limiting Factors in p-type Distributed-Polarization Doped AlGaN2022
- Author(s)
  隈部　岳瑠、渡邉　浩崇、本田　善央、天野　浩
- Organizer
  APWS2022（The 10th Asia-Pacific Workshop on Widegap Semiconductors）
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] GaN (0001)自立基板上GaNのHVPE成長における表面カイネティクス2022
- Author(s)
  大西一生, 藤元直樹, 新田州吾, 渡邉浩崇, 本田善央, 天野浩
- Organizer
  第83回　応用物理学会　秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] p型分極ドープAlGaN層中のShockley-Read-Hall寿命2022
- Author(s)
  隈部岳瑠, 川崎晟也, 渡邉浩崇, 出来真斗, 本田善央, 天野浩
- Organizer
  第83回　応用物理学会　秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] Mg熱拡散法を用いた縦型GaNp-n接合ダイオードの作製2022
- Author(s)
  伊藤佑太, 川崎晟也, 権熊, 島村健矢, 成田周平, 渡邉浩崇, 出来真斗, 新田州吾, 本田善央, 田中敦之, 天野浩
- Organizer
  第83回　応用物理学会　秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22H00213
[Presentation] Synthesis of InGaN nanowires and nanostructures to achieve high indium content and high crystal quality for optoelectronic devices2019
- Author(s)
  Geoffrey Avit, Yoann Robin, Mohammed Zeghouane, Léo Mostéfa, Boris Michalska, Yamina Andre, Dominique Castelluci, Agnès Trassoudaine, and Hiroshi Amano
- Organizer
  ICMaSS2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18F18347
[Presentation] Growth and properties of InGaN based nanorods for LEDs: comparison between core/shell and axial MQWs structures2019
- Author(s)
  Geoffrey Avit, Yoann Robin, Yaqiang Liao, Léo Mostépha, Boris Michalska, Agnès Trassoudaine, Shuggo Nitta and Hiroshi Amano
- Organizer
  SSDM2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18F18347
[Presentation] Control of the growth plane of semipolar GaN on Si (001) by adjusting the direction of sputtered AlN buffer layer2016
- Author(s)
  H. J. Lee, S. Y. Bae, K. Lekhal, T. Suzuki, M. Deki, Y. Honda, and H. Amano
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE 18)
- Place of Presentation
  名古屋市
- Year and Date
  2016-08-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Presentation] Controlling the growth orientation, position, and composition of III-nitride nanowires with hydride vapor phase epitaxy2016
- Author(s)
  K. Lekhal, S. Y. Bae, K. Nishi, K. Saitoh, M. Deki, Y. Honda, and H. Amano
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE 18)
- Place of Presentation
  名古屋市
- Year and Date
  2016-08-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Presentation] Study of AlN Nucleation by Directional Sputtering for Growth of Orientation-Controlled GaN on Si(001) Substrates2016
- Author(s)
  H. J. Lee, S. Y. Bae, K. Lekhal, A. Tamura, Y. Honda, and H. Amano
- Organizer
  The International Workshop on Nitride Semiconductors (IWN 2016)
- Place of Presentation
  Orlando, USA
- Year and Date
  2016-10-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Presentation] In-situ monitoring of InGaN growth by Laser absorption and scattering method2016
- Author(s)
  Yoshio Honda, Tetsuya Yamamoto, Akira Tamura, Shigeyoshi Usami, Kentaro Nagamatsu, Maki Kushimoto, Shugo Nitta, Hiroshi Amano
- Organizer
  SPIE. PHOTONICS WEST
- Place of Presentation
  San Francisco, CA, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer on Si substrates2016
- Author(s)
  S. Y. Bae, K. Lekhal, H. J. Lee, T. Mitsunari, J. W. Min, D. S. Lee, M. Deki, Y. Honda, and H. Amano
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE 18)
- Place of Presentation
  名古屋市
- Year and Date
  2016-08-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Presentation] The growth of self-organized GaN nanowires on Si substrate by Molecular Beamepitaxy2016
- Author(s)
  Yoshio Honda, Yuri Tsutsumi, Tatsuya Hattori, and Hiroshi Amano
- Organizer
  ISPlasma 2016
- Place of Presentation
  名古屋大学
- Year and Date
  2016-02-14
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 光電流測定によるLED内部量子効率評価2016
- Author(s)
  宇佐美茂佳、本田善央、天野浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Controlled morphology of regular GaN microrod and nanowire arrays by selective area growth with HVPE2016
- Author(s)
  K. Lekhal, S. Y. Bae, H. J. Lee, K. Nishi, K. Saitoh, M. Deki, Y. Honda, and H. Amano
- Organizer
  The 4th international conference on light-emitting devices and their industrial applications (LEDIA) 2016
- Place of Presentation
  横浜市
- Year and Date
  2016-04-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Presentation] High hole accumulation and low p-contact resistande with graded-AlGaN layers2016
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  Nagoya/Japan
- Year and Date
  2016-03-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Reduction of leakage current density in homoepitaxial m-plane GaN by controlling V/III ratios for high-power device applications2016
- Author(s)
  O. 1 Barry, A. Tanaka , K. Nagamatsu, S. Y. Bae, K. Lekhal, M. Deki, S. Nitta, Y. Honda, H. Amano
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE 18)
- Place of Presentation
  名古屋市
- Year and Date
  2016-08-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Presentation] レーザ散乱を用いたInGaN結晶成長表面粗さ回復の観察2016
- Author(s)
  山本哲也、田村彰、永松謙太郎、新田州吾、本田善央、天野浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Controlled growth of GaN nanorod arrays with an orientation-induced buffer layer2016
- Author(s)
  S. Y. Bae, K. Lekhal, H. J. Lee, J. W. Min, D. S. Lee, M. Deki, Y. Honda, and H. Amano
- Organizer
  The 16th international meeting on information and displays (IMID) 2016
- Place of Presentation
  Jeju, South Korea
- Year and Date
  2016-08-26
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Presentation] Controlled growth of highly elongated GaN nanorod arrays on AlN/Si templates by pulsed-mode metalorganic vapor deposition2016
- Author(s)
  S. Y. Bae, K. Lekhal, B. O. Jung, D. S. Lee, M. Deki, Y. Honda, and H. Amano
- Organizer
  The 4th international conference on light-emitting devices and their industrial applications (LEDIA) 2016
- Place of Presentation
  横浜市
- Year and Date
  2016-04-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16F14366
[Presentation] Group III nitride semiconductors as future key materials for energy savings and energy harvesting2015
- Author(s)
  天野浩
- Organizer
  ICSI-9
- Place of Presentation
  Montreal, Quebec, Canada
- Year and Date
  2015-05-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Selective Area Growth of GaN Nanorods on Si (111) Grown by Pulsed-Mode MOCVD2015
- Author(s)
  Si-Young Bae, Byuong Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  EーMRS学会
- Place of Presentation
  France
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Si基板上(1-101)InGaNストライプレーザー作製に向けた共振器構造2015
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第7回窒化物半導体結晶成長講演会(プレISGN-6)
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] HVPE and VLS-HVPE Synthesis of GaN Nanowires2015
- Author(s)
  K. Lekhal, T. Mitsunari, R. Kizu, S. Y. Bae, Y. Honda, and H. Amano
- Organizer
  OPIC2015 LEDIA国際会議
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366
[Presentation] Lighting the Earth with LEDs, -Past, Present and Future Prospects of GaN-Based Blue LEDs-2015
- Author(s)
  天野浩
- Organizer
  CS MANTECH
- Place of Presentation
  Scottsdale, Arizona, USA
- Year and Date
  2015-05-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of high-quality AlN on sapphire using annealing technique2015
- Author(s)
  H. Miyake, S. Tamaki, D. Yasui, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
- Organizer
  9th International Workshop on Bulk Nitride Semiconductors
- Place of Presentation
  韓国
- Year and Date
  2015-11-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Reduction of Residual Carbon on Un-doped GaN Grown using Metal Organic Hydrogen Chloride Vapor Phase Epitaxy2015
- Author(s)
  Zheng Ye, Zheng Sun, Kentaro Nagamatsu, Manato Deki, Yoshio Honda, and Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Junction Technology in GaN LEDs2015
- Author(s)
  天野浩
- Organizer
  15th International Workshop on Junction Technology
- Place of Presentation
  京都大学
- Year and Date
  2015-06-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] RF加熱式HVPE法を用いたAlN成長2015
- Author(s)
  安井, 三宅, 平松, 岩谷, 赤崎, 天野
- Organizer
  応用物理学会SC東海地区学術講演会2015
- Place of Presentation
  名古屋大学
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Beyond blue LED2015
- Author(s)
  天野浩
- Organizer
  SSDM
- Place of Presentation
  札幌コンベンションセンター
- Year and Date
  2015-09-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた(0001)面GaN上InGaN/GaN多重量子井戸の成長Ⅱ2015
- Author(s)
  田村彰、山本哲也、本田善央、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Present and future prospects of nitride-based light emitting devices2015
- Author(s)
  天野浩
- Organizer
  ILY2015
- Place of Presentation
  釜山、韓国
- Year and Date
  2015-08-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Compatibility of hydride vapor phase epitaxy process with synthesis of horizontal and vertical GaN nanowires2015
- Author(s)
  Kaddour Lekhall, Si-Young Bae, Ho-Jun Lee, Zheng Sun, Manato Deki, Yoshio Honda and Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of InGaN well layer with an in-situ monitoring system2015
- Author(s)
  山本哲也、田村彰、宇佐美茂佳、永松謙太郎、新田州吾、本田善央、天野浩
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 半極性(1-101)GaNストライプ結晶上高In組成InGaN成長2015
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Selective Area Growth of GaN Nanorods on Si (111) Grown by Pulsed-Mode MOCVD2015
- Author(s)
  Si-Young Bae, Byuong Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  E-MRS学会
- Place of Presentation
  Cites-Unies EURALILLE、France
- Year and Date
  2015-05-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366
[Presentation] MOHVPE法により成長したGaN膜中の光容量測定2015
- Author(s)
  出来真斗、叶正、本田善央、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Structural and optical study of core-shell InGaN layers of GaN nanorods on Si substrates via pulsed-mode MOCVD2015
- Author(s)
  Si-Young Bae, Byung Oh Jung, Kaddour Lekhal Dong-Seon Lee, Manato Deki, Yoshio Honda, and Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366
[Presentation] Progress of GaN LED2015
- Author(s)
  天野浩
- Organizer
  Joint Conference : EP2DS-21&MSS-17
- Place of Presentation
  仙台国際センター
- Year and Date
  2015-07-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Epitaxial Growth of AlN Templates with Smooth Surfaces on Sapphire2015
- Author(s)
  S. Katsuno, K. Hagiwara, T. Yasuda, N. Koide, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  2015 Material Research Society Fall Meeting
- Place of Presentation
  Boston/USA
- Year and Date
  2015-12-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Current and Future of Solid State Lighting2015
- Author(s)
  天野浩
- Organizer
  CLE02015
- Place of Presentation
  San Jose、CA、USA
- Year and Date
  2015-05-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of AlN layer on sputtered AlN template substrate by hydride vapor phase epitaxy2015
- Author(s)
  S. Tamaki, D. Yasui, H. Miyake, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
- Organizer
  APWS2015
- Place of Presentation
  ソウル韓国
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] InGaN成長中の光散乱を用いたin situ観察と成長機構2015
- Author(s)
  本田善央、田村彰、山本哲也、久志本真希、天野浩
- Organizer
  第23回シンポジウム「窒化物半導体の成長技術とメカニズム理解」
- Place of Presentation
  早稲田大学
- Year and Date
  2015-05-22
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Compatibility of hydride vapor phase epitaxy process with synthesis of horizontal and vertical GaN nanowires2015
- Author(s)
  K. Lekhal, S. Y. Bae, H. J. Lee, Z. Sun, M. Deki, Y. Honda, and H. Amano
- Organizer
  ISGN-6
- Place of Presentation
  アクトシティ浜松
- Year and Date
  2015-11-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366
[Presentation] 紫外LEDの開発と医療応用2015
- Author(s)
  天野浩
- Organizer
  第66回日本皮膚科学会中部支部学術大会
- Place of Presentation
  神戸国際会議場
- Year and Date
  2015-10-31
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of Highly Ordered GaN Nanorod Light-Emitting Didoes on Si-Based AlN Template for Epitaxial Transfer2015
- Author(s)
  Si-Young Bae, Byuong Oh Jung, Ho-Jun Lee, Kaddour Lekhal, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Development of GaN based devices and future prospects.2015
- Author(s)
  天野浩
- Organizer
  Jaszowiec International School and Congerence
- Place of Presentation
  ポーランド
- Year and Date
  2015-06-22
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Low Temperature Volumetric Acceptor Activation of Bulk Mg-Doped GaN by Micro wave Irradiation2015
- Author(s)
  Marc L Olsson, Yoshio Honda, Hiroshi Amano
- Organizer
  MRS-Fall Meeting
- Place of Presentation
  Boston, Massachusetts, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlN/Sapphire基板を用いたRF加熱式HVPEによるAlN成長2015
- Author(s)
  安井, 三宅, 平松, 岩谷, 赤崎, 天野
- Organizer
  電子情報通信学会技術研究報告ED2015-70
- Place of Presentation
  大阪市立大学
- Year and Date
  2015-11-26
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 窒化物半導体レーザ開発の歴史と今後の展開2015
- Author(s)
  天野浩
- Organizer
  応用物理学会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Seeking Future Electronics for Better Human Life2015
- Author(s)
  天野浩
- Organizer
  ICAE2015
- Place of Presentation
  済州島、韓国
- Year and Date
  2015-11-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Challenge for short and long wavelength solid state light emitting devices2015
- Author(s)
  天野浩
- Organizer
  WUPP
- Place of Presentation
  ヒルトン福岡シーホーク
- Year and Date
  2015-08-21
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Structural and optical study of core-shell InGaN layers of GaN nanorods on Si substrates via pulsed-mode MOCVD2015
- Author(s)
  Byung Oh Jung, Kaddour Lekhal Dong-Seon Lee, Manato Deki, Yoshio Honda, and Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 高Al組成のn-AlGaNにおけるV系電極のコンタクト特性2015
- Author(s)
  森一喜、武田邦宏、草深敏匡、岩谷素顕、上山智、竹内哲也、赤崎勇、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2015-03-13
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Lighting the earth by LEDs2015
- Author(s)
  天野浩
- Organizer
  ICNS-11
- Place of Presentation
  北京、中国
- Year and Date
  2015-08-31
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] LED Lighting for Energy Savings and Future Prospects of LED Applications2015
- Author(s)
  天野浩
- Organizer
  2015IEEE Photonics Conference
- Place of Presentation
  Reston, Virginia USA
- Year and Date
  2015-10-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 指向性スパッタリングAlN中間層を用いたSi(001)基板上単結晶(10-13)GaN成長2015
- Author(s)
  光成正, 本田善央, 天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] サファイア上AlNテンプレートの表面平坦性の検討2015
- Author(s)
  勝野翔太, 萩原康大, 安田俊輝, 小出典克, 岩谷素顕, 竹内哲也, 上山智, 赤﨑勇, 天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋/日本
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
- Author(s)
  S. Katsuno, T. Yasuda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
- Place of Presentation
  Yokohama/Japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Low Ohmic contact resistance to high AlN molar fraction n-type AlGaN by V-based electrode2015
- Author(s)
  Kazuki Mori, Kunihiro Takeda, Toshiki Kusafuka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Hamamatsu/Japan
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] SELECTIVE GaN GROWTH ON AMORPHOUS LAYER BY COMBINED EPITAXY WITH MBE AND MOCVD2015
- Author(s)
  Si-Young Bae, Jung-Wook Min, Byung Oh Jung, Kaddour Lekhal, Dong-Seon Lee, Yong-Tak Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  ICNS-11
- Place of Presentation
  Beijing, China
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Group III nitride semiconductors as future key materials for energy saving and energy harvesting2015
- Author(s)
  天野浩
- Organizer
  ALC'15
- Place of Presentation
  松江市くにびきメッセ
- Year and Date
  2015-10-29
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Lighting the World by LEDs and Future Prospects2015
- Author(s)
  天野浩
- Organizer
  World Science Forum
- Place of Presentation
  ハンガリー
- Year and Date
  2015-11-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Lasing Properties of (1-101) InGaN/GaN Stripe Cavity Structure on Patterned (001) Si Substrate2015
- Author(s)
  Maki Kushimoto, Yoshio Honda, Hiroshi Amano
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Progress in III-Nitride Nanophotonics.2015
- Author(s)
  天野浩
- Organizer
  International Nano Optoelectronics Workshop
- Place of Presentation
  東京大学
- Year and Date
  2015-08-03
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] InGaN 系光デバイスの成長と特性評価2015
- Author(s)
  本田善央、田村彰、山本哲也、李昇我、久志本真希、天野浩
- Organizer
  STR 結晶成長結晶成長とデバイス解析
- Place of Presentation
  横浜
- Year and Date
  2015-06-26
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Contact Characteristics of V-Based Electrode for High AlN Molar Fraction n-AlGaN2015
- Author(s)
  K. Mori, K. Takeda, T. Kusafuka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Characterization of light-emitting diode efficiency by biased photocurrent and photoluminescence measurement2015
- Author(s)
  宇佐美茂佳、光成正、本田善央、天野浩
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Fabrication of High Indium Content InGaN Quantum Wells on Semipolar (1-101) Micro Stripe Crystals/Si2015
- Author(s)
  M. Kushimoto, Y. Honda and H. Amano
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  滋賀県
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 真空技術とLED開発の歴史および未来の照明について2015
- Author(s)
  天野浩
- Organizer
  日本真空工業会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2015-09-09
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Revolution of display and lighting by LEDs2015
- Author(s)
  天野浩
- Organizer
  ICAI
- Place of Presentation
  一橋大学
- Year and Date
  2015-06-18
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] HVPE and VLS-HVPE Synthesis of GaN Nanowires2015
- Author(s)
  Kaddour LEKHAL, Tadashi Mitsunari, R. Kizu, Si-Young Bae, Yoshio Honda and Hiroshi Amano
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 研究の継続性とイノベーション2015
- Author(s)
  天野浩
- Organizer
  日本学術会議
- Place of Presentation
  日本学術会議講堂
- Year and Date
  2015-04-09
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた(0001)面GaN上lnGaN/GaN多重量子井戸の成長2015
- Author(s)
  田村彰、山本哲也、本田善央、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Effect of Increasing Pressure on the Growth of High-Indium-Content InGaN by MOVPE2015
- Author(s)
  A. Tamura, T. Yamamoto, K. Yamashita, Y. Honda, H. Amano
- Organizer
  OPIC2015 LEDIA
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (001)Si基板上半極性面InGaN光共振器の誘導放出特性2015
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス (神奈川県平塚市)
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Nitride-Based Tunnel Junctions towards Deep UV-LEDs2015
- Author(s)
  D. Takasuka, D. Minamikawa, M. Ino, T. Takeuchi, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications' 15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlGaN-based UV-LEDs with polarization engineering2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  14th Akasaki Research Center Symposium
- Place of Presentation
  Nagoya/japan
- Year and Date
  2015-11-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] バイアス印加光電流およびバイアス印加PL測定によるLED評価2015
- Author(s)
  宇佐美茂佳, 本田善央、天野浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学 (神奈川県平塚市)
- Year and Date
  2015-03-10
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Challenge for energy savings and energy harvesting by new materials2015
- Author(s)
  天野浩
- Organizer
  ハイレベルフォーラムinつくば
- Place of Presentation
  筑波大学
- Year and Date
  2015-10-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] バナジウム系電極による高AlNモル分率n型AlGaNのとの低接触比抵抗の検討2015
- Author(s)
  森一喜、草深敏匡、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋/日本
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Lighting the Earth by LEDs2015
- Author(s)
  天野浩
- Organizer
  GLOBEアジア・パシフィック議員フォーラム
- Place of Presentation
  衆議院第一議員会館
- Year and Date
  2015-09-30
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Challenge for Solving Global Issues by Nitride-Based Devices2015
- Author(s)
  天野浩
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Year and Date
  2015-11-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] レーザその場観察を用いたInGaN結晶成長2015
- Author(s)
  山本哲也、田村彰、本田善央、天野浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Development and future applications of GaN-based LEDs.2015
- Author(s)
  天野浩
- Organizer
  Nanostructure conference
- Place of Presentation
  ロシア
- Year and Date
  2015-06-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Optical Characterization and Structural Investigation of GaN Nanorod Arrays and its Based InGaN/GaN MQWs Core-Shell Nanoarchitecture Arrays2015
- Author(s)
  Byung Oh Jung, Si-Young Bae, Seunga Lee, Sang Yun Kim, Masataka Imura, Yoshio Honda, Hiroshi Amano
- Organizer
  2015 MRS Spring Meeting
- Place of Presentation
  San Francisco, California, USA
- Year and Date
  2015-04-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] InGaN growth mechanism evaluation by In-situ monitoring based on LAS2015
- Author(s)
  Yoshio Honda, Akira Tamura, Tetsuya Yamamoto, Maki Kushimoto, Hiroshi Amano
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices
- Place of Presentation
  京都大学
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Correlation between crystal qualities and electrical properties in Si-doped AlGaN2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] HVPE Growth of Thick AlN on AlN/Sapphire2015
- Author(s)
  H. Miyake, S. Tamaki, D. Yasui, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
- Organizer
  Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors
- Place of Presentation
  福岡
- Year and Date
  2015-08-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth and Characterization of Semipolar (1-101) High-Indium-Content InGaN Quantum Wells on Si (001)2015
- Author(s)
  Maki Kushimoto, Yoshio Honda, Hiroshi Amano
- Organizer
  ISGN-6
- Place of Presentation
  浜松アクトシティ
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlN Epitaxial Growth on Sapphire with an Intermediate Layer2015
- Author(s)
  S. Katsuno, T. Yasude, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications'15
- Place of Presentation
  Yokohama/japan
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of Highly Ordered GaN Nanorod Light-Emitting Didoes on Si-Based AlN Template for Epitaxial Transfer2015
- Author(s)
  Si-Young Bae, Byuong Oh Jung, Ho-Jun Lee, Kaddour Lekhal, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  OPIC2015 LEDIA国際会議
- Place of Presentation
  パシフィコ横浜・会議センター
- Year and Date
  2015-04-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14F04366
[Presentation] Optimal Growth Condition in Pulsed-Mode MOVPE Process for Selective Area Growth of GaN Nanorod Arrays and Its Based 3D-LED Structure2015
- Author(s)
  Byung Oh JUNG, Si-Young BAE, Masataka IMURA, Yoshio HONDA, Hiroshi AMANO
- Organizer
  ICMAT2015 & IUMRS-ICA2015
- Place of Presentation
  Suntec City, Singapore
- Year and Date
  2015-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 深紫外LEDに向けた窒化物半導体トンネル接合の検討2015
- Author(s)
  高須賀大貴, 南川大智, 井野匡貴, 竹内哲也, 岩谷素顕, 上山智, 天野浩, 赤﨑勇
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  神奈川県平塚市
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Lighting the Earth by LEDs2015
- Author(s)
  天野浩
- Organizer
  IDW'15
- Place of Presentation
  滋賀県
- Year and Date
  2015-12-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 地球規模問題解決へのチャレンジ2015
- Author(s)
  天野浩
- Organizer
  学振ノーベル賞受賞記念講演会
- Place of Presentation
  東京医科歯科大
- Year and Date
  2015-04-20
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] GaN-Based Devices for Future Electronics.2015
- Author(s)
  天野浩
- Organizer
  Workshop on Frontier Photonic and Electronic Material and Devices
- Place of Presentation
  京都大学
- Year and Date
  2015-07-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlN growth on sputtering AlN template substrate by hydride vapor phase epitaxy2015
- Author(s)
  D. Yasui, S. Tamaki, H. Miyake, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
- Organizer
  The 3th International Conference on Light-Emitting Devices and Their Industrial Applications
- Place of Presentation
  横浜
- Year and Date
  2015-04-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Optimization of growth condition of conductive AlGaN layer with high Al content2015
- Author(s)
  Toshiki Yasuda, Shota Katsuno, Natsuko Kuwabara, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
- Organizer
  The 7th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  Seoul/Korea
- Year and Date
  2015-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 紫外LEDの開発と医療応用2015
- Author(s)
  天野浩
- Organizer
  日本乾癬学会学術大会
- Place of Presentation
  ウェスティンナゴヤキャッスル
- Year and Date
  2015-09-04
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 世界を照らすLED2015
- Author(s)
  天野浩
- Organizer
  日本表面科学会
- Place of Presentation
  学習院大学
- Year and Date
  2015-05-23
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Investigation of hole injection in UV-LEDs utilizing polarization effect2014
- Author(s)
  Toshiki Yasuda, Kento Hayashi, Tsubasa Nakashima, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
- Organizer
  LEDIA'14
- Place of Presentation
  yokohama/japan
- Year and Date
  2014-04-23
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 走査型電子顕微鏡による半導体ポテンシャル分布の観察2014
- Author(s)
  軽海貴博, 田中成泰, 丹司敬義, 天野浩
- Organizer
  電気・電子・情報関係学会東海支部連合大会
- Place of Presentation
  名古屋市
- Year and Date
  2014-09-08
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (001)Si基板上半極性面工nGaN光共振器の誘導放出特性2014
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた半極性面上InGaN/GaN多重量子井戸の成長2014
- Author(s)
  田村彰、本田善央、天野浩
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (001) Si基板上(1-101)ストライプInGaN共振器構造の誘導放出2014
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Study of Ga-polar GaN nanowire arrays formation mechanism using pulsed-mode MOVPE growth technique2014
- Author(s)
  Byung Oh Jung, Si-Young Bae, Dong-Seon Lee. Yoshio Honda, Hiroshi Amano
- Organizer
  ISGN-5
- Place of Presentation
  The Westin Hotel Peachtree Plaza, Atlanta, Georgia, USA
- Year and Date
  2014-05-17
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Improvement of the light extraction efficiency in 350-nm-emission UV light-emitting diodes by novel distributed bragg reflector p-type electrode2014
- Author(s)
  T. Nakashima, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
- Organizer
  ISPlasma2014/IC-PLANTS2014
- Place of Presentation
  Meijo Univ., Nagoya
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 窒化物半導体LEDにおけるキャリア輸送への分極固定電荷の影響2014
- Author(s)
  勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
- Organizer
  電子情報通信学会2014 電子デバイス研究会(ED)
- Place of Presentation
  名古屋/日本
- Year and Date
  2014-05-29
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlGaN/GaN超格子分極によるp型伝導の温度依存性2014
- Author(s)
  石井貴大, 本田善央, 山口雅史, 天野浩
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] LEDにおける光電流を考慮した内部量子効率測定2014
- Author(s)
  宇佐美茂佳、本田善央、天野浩
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth optimization of green InGaN multi-quantum well by in situ monitoring system2014
- Author(s)
  光成正、本田善央、天野浩
- Organizer
  LEDIA'14
- Place of Presentation
  横浜市
- Year and Date
  2014-04-22
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Recent Development of Atomic-Level in Situ Growth Monitoring Tools for the Fabrication of Nitride-Based Light Emitting Devices2014
- Author(s)
  H. Amano, G. Ju, A. Tamura, S. Usami, K. Yamashita, T. Mitsunari, Y. Honda, M. Tabuchi, Y. Takeda, S. Fuchi
- Organizer
  WLED-5
- Place of Presentation
  Jeju, Korea
- Year and Date
  2014-06-03
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Two types of buffer layer for the growth of GaN on highly lattice mismatched substrates and their impact on the development of sustainable systems2014
- Author(s)
  Tadashi Mitsunari, Koji Okuno, Yoshio Honda, Hiroshi Amano
- Organizer
  Deutsche Physikalische Gesellschaft e. V.
- Place of Presentation
  Dresden, Germany
- Year and Date
  2014-04-03
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 電子線ホログラフィ法による窒化物半導体超格子内のピエゾ電界の解析2014
- Author(s)
  長尾俊介, 田中成泰, 丹司敬義, 天野浩
- Organizer
  電気・電子・情報関係学会東海支部連合大会
- Place of Presentation
  名古屋市
- Year and Date
  2014-09-08
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Detail study on AlN bulk crystal grown by sublimation2014
- Author(s)
  袴田涼馬, 本田善央, 天野浩
- Organizer
  IUMRS-ICA2014
- Place of Presentation
  福岡大学(福岡県福岡市)
- Year and Date
  2014-08-24
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Diffuse laser based in situ monitoring of the growth of green InGaN multi quantum well2014
- Author(s)
  光成正, 本田善央, 天野浩, 他
- Organizer
  第33回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺 (静岡県伊豆市)
- Year and Date
  2014-07-09
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 逆方向バイアス下光電流測定によるSRHモデル修正2014
- Author(s)
  宇佐美茂佳、本田善央、天野浩
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 分極半導体としてのInAlGaNとデバイス応用2014
- Author(s)
  天野浩
- Organizer
  第2回エレクトロニクス薄膜材料研究会「最先端電子・情報素子と機能材料研究の動向」
- Place of Presentation
  名古屋大学東山キャンパス全学教育棟4階
- Year and Date
  2014-09-25
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Orientation improvement of AlN with thin Ti pre-deposition on the Si (001) substrate2014
- Author(s)
  光成正, 本田善央, 天野浩
- Organizer
  IWN2014
- Place of Presentation
  Wroclaw Centennial Hall conference center
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 窒化物半導体による生活の変遷(基調講演)2014
- Author(s)
  天野浩
- Organizer
  CREST第2回公開シンポジウム
- Place of Presentation
  豊田工業大学8号館
- Year and Date
  2014-02-24
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Band Enginnering Considering Negative and Positive polarization Charges in UV-LEDs2014
- Author(s)
  Toshiki Yasuda, Kento Hayashi, Syouta Katsuno, Tsubasa Nakashima, Testuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Hiroshi Amano
- Organizer
  IWN2014
- Place of Presentation
  wroclaw/poland
- Year and Date
  2014-08-27
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 窒化物半導体LEDにおける正孔伝導に対する分極電荷の影響2014
- Author(s)
  安田俊輝、勝野翔太、林健人、竹内哲也、岩谷素顕、上山智、赤﨑勇、天野浩
- Organizer
  日本結晶成長学会ナノエピ分科会2014春季講演会第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋/日本
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Optical gain spectra of (1-101) InGaN stripe cavity structures on a patterned (001) Si substrate2014
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  IWN2014
- Place of Presentation
  Wroclaw Centennial Hall conference center
- Year and Date
  2014-08-26
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] X線反射、CTR散乱及びレーザ吸収散乱法を用いた窒化物半導体結晶成長の原子レベルその場観察2014
- Author(s)
  田村彰、山下康平、光成正、鞠光旭、本田善央、田渕雅夫、竹田美和、渕真悟、天野浩
- Organizer
  平成26年度文部科学省ナノテクノロジープラットフォーム事業微細構造解析プラットフォーム放射光利用研究セミナー
- Place of Presentation
  大阪大学大学院基礎工学研究科国際棟セミナー室
- Year and Date
  2014-09-05
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Pre-sputter Technology for GaN Acceptor Doping by Mg-ion Implantation2014
- Author(s)
  孫政, 永山勉, 渡邊哲也, 本田善央, 天野浩
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] GaNを用いた新しいエレクトロニクスと省・創エネルギーへの貢献2014
- Author(s)
  天野浩
- Organizer
  日中省エネルギー・環境総合フォーラム
- Place of Presentation
  遼寧大厦遼寧庁(北京)
- Year and Date
  2014-12-28
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 分極制御による紫外発光素子のホール注入の検討2014
- Author(s)
  安田俊樹、林健人、竹田健一郎、中島翼、竹内哲也、上山智、岩谷素顕、赤崎勇、天野浩
- Organizer
  第61回応用物理学会秋季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of (1-101)InGaN stripes on patterned (001)Si substrate2014
- Author(s)
  曾根康和、久志本真希、本田善央、天野浩
- Organizer
  IUMRS-ICA2014
- Place of Presentation
  福岡大学(福岡県福岡市)
- Year and Date
  2014-08-24
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 窒化物半導体LEDにおける分極電荷の補償2014
- Author(s)
  勝野翔太, 林健人, 安田俊輝, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤﨑勇
- Organizer
  第6回窒化物半導体結晶成長講演会
- Place of Presentation
  名古屋/日本
- Year and Date
  2014-07-25
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた半極性面上InGaN/GaN多重量子井戸の成長2014
- Author(s)
  田村彰、本田善央、天野浩
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Ultraprecision surface monitoring during growth of InGaN on GaN2014
- Author(s)
  H. Amano, G. Ju, A. Tamura, K. Yamashita, T. Mitsunari, Y. Honda, M. Tabuchi, Y. Takeda, and S. Fuchi
- Organizer
  WUPP for Wide-gap Semiconductors, 2014
- Place of Presentation
  Bath, UK
- Year and Date
  2014-08-21
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Realization of vertically well-aligned GaN nanowire based core-shell array growth by MOVPE : Morphology evolution and luminescent properties2014
- Author(s)
  Byung Oh Jung, Si-Young Bae, Masataka Imura, Yoshio Honda, Hiroshi Amano
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 加圧MOVPE法を用いた半極性面上InGaN/GaN多重量子井戸の成長2014
- Author(s)
  田村彰、本田善央、天野浩
- Organizer
  第7回窒化物半導体結晶成長講演会
- Place of Presentation
  名城大学
- Year and Date
  2014-07-25
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 環境貢献と経済発展の両立…進化を続けるLED技術(基調講演)2014
- Author(s)
  天野浩
- Organizer
  日本フォトニクス協議会関西支部設立記念講演会
- Place of Presentation
  大阪商工会議所
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] TiN層を導入した昇華法AlN成長2014
- Author(s)
  袴田涼馬, 本田善央, 天野浩
- Organizer
  応用物理学会SC東海地区学術講演会2014
- Place of Presentation
  名古屋大学(名古屋市)
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] AlGaN系材料・発光デバイスの現状と今後の課題2014
- Author(s)
  石井貴大、袴田涼馬、若杉侑也、本田善央、天野造、山川雅康、伴和仁、永松謙太郎、岡田成仁、井村将隆、岩谷素顕
- Organizer
  (独)日本学術振興会第145委員会
- Place of Presentation
  明治大学駿河台キャンパス
- Year and Date
  2014-01-17
- Invited
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Laser-based in situ monitoring of high In-content InGaN growth on GaN (0001)2014
- Author(s)
  光成正, 本田善央, 天野浩, 他
- Organizer
  ISSLED 2014
- Place of Presentation
  台湾国立中山大学
- Year and Date
  2014-12-15
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] (1-101) InGaNマイクロキャビティの誘導放出2014
- Author(s)
  久志本真希、本田善央、天野浩
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺(静岡県伊豆市)
- Year and Date
  2014-07-10
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Selective area grown GaN nanowire based InGaN/GaN MQWs coaxial array : structural characterization and luminescent properties2014
- Author(s)
  Byung Oh Jung, Si-Young Bae, Sang Yun Kim, Dong-Seon Lee, Yoshio Honda, Hiroshi Amano
- Organizer
  2014 MRS Fall Meeting
- Place of Presentation
  Hynes Convention Center、Sheraton Boston Hotel (Boston, Massachesetts, USA)
- Year and Date
  2014-11-29
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 金属マスクを用いた昇華法AlN選択成長2014
- Author(s)
  袴田涼馬, 本田善央, 天野浩
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-16
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Atomic-Level In-Situ InGaN Growth Process Monitoring for Nitride-Based Visible Long Wavelength Light Emitting Device Fabrication2014
- Author(s)
  Hiroshi Amano
- Organizer
  THU-CAS-JSPS Joint Symposium, “Emerging Photonics”
- Place of Presentation
  Tsinghua University, Beijing
- Year and Date
  2014-11-07
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Reduction of the threshold power density in AlGaN/AlN multiquntum wells DUV (288 nm) optical pumped lasers2013
- Author(s)
  Tomoaki Yamada, Yuko Matsubara, Hiroshi Shinzato, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Doshisha Univ., Kyoto
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] VSL法を用いたAlGaN/AlN多重量子井戸の光学利得測定2013
- Author(s)
  山田知明, 松原由布子, 竹田健一郎, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 天野浩
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Electrical characterization of AlGaN-based deep ultraviolet light-emitting diode by low-voltage cross-sectional SEM-EBIC2013
- Author(s)
  T. Karumi, S. Tanaka, T. Tanji, H. Amano, Y. Furusawa
- Organizer
  International Symposium on Ecotopia Science '13
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2013-12-14
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 350nm紫外LED光取り出し効率改善に関する研究2013
- Author(s)
  中嶋翼, 竹田健一郎, 岩谷素顕, 上山智, 竹内哲也, 赤崎勇, 天野浩
- Organizer
  電子情報通信学会(ED, CPM, LQE合同研究会)
- Place of Presentation
  大阪大学
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] RF-MBE法による各種基板上GaN系ナノワイヤ成長2013
- Author(s)
  水谷駿介，田畑拓也，中川慎太，山口雅史，天野浩，井村将隆，中山佳子，竹口雅樹
- Organizer
  第60回応用物理学会春期学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Dislocation density dependence of stimulated emission characteristics in AlGaN/AlN multi-quantum wells2013
- Author(s)
  Motoaki Iwaya, Yuko Matsubara, Tomoaki Yamada, Kenichiro Takeda, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasak, and Hiroshi Amano
- Organizer
  8th International Workshop on Bulk Nitride Semiconductor
- Place of Presentation
  Kloster Seeon, Germany
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 低加速電圧SEM-EBIC法によるAlGaN系深紫外発光素子断面の電気的特性の解析2013
- Author(s)
  軽海貴博, 田中成泰, 丹司敬義, 天野浩, 古澤優太
- Organizer
  平成25年電気関係学会東海支部連合大会
- Place of Presentation
  浜松
- Year and Date
  2013-09-25
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Improvement of Light Extraction Efficiency in 350-nm Emission UV Light-Emitting Diodes2013
- Author(s)
  Tsubasa Nakashima, Kenitirou Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  10th International Conference of Nitride Semiconductors
- Place of Presentation
  Washington DC
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] 低加速SEM-EBIC法によるAlGaN系深紫外発光素子断面の電気的特性の解析2013
- Author(s)
  軽梅貫博, 田中成泰, 丹司敬義, 天野浩, 古澤優太
- Organizer
  日本顕微鏡学会第57回シンポジウム
- Place of Presentation
  名古屋
- Year and Date
  2013-11-15
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Challenge for the growth of high-In-content InGaN2012
- Author(s)
  Hiroshi Amano
- Organizer
  III-V and III-N-based High Efficiency Solar Cells for Future Energy Harvesting
- Place of Presentation
  Chiba, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 窒化物を用いたLED及び太陽電池の現状と将来性2012
- Author(s)
  天野浩
- Organizer
  電子情報通信学会・次世代ナノ技術に関する時限研究専門委員会主催研究会「グリーン&ライフイノベーションに向けた次世代ナノ材料・デバイス」
- Place of Presentation
  産業技術総合研究所・臨海副都心センター、東京(招待講演)
- Year and Date
  2012-01-16
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 高 In 組成 InGaN 実用化にむけて2012
- Author(s)
  天野浩
- Organizer
  第59回応用物理学関係連合講演会(指定)第59回応用物理学関係連合講演会(指定)
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Al2O3/Diamond Field Effect Transistors using Surface p-Channel Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano:
- Organizer
  IUMRS-International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -2012
- Author(s)
  M.Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  Hasselt Diamond Workshop 2012 SBDD XVII
- Place of Presentation
  The cultuurcentrum Hasselt ,Hasselt,Belgium
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Understanding the relationship between IQE and defects in nitride-based LEDs2012
- Author(s)
  M.Iwaya, H.Amano
- Organizer
  SPIE Photonics West 2012
- Place of Presentation
  San Francisco, USA(招待講演)
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] GaN nanowires grown on a graphite substrate by RF-MBE2012
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo
- Year and Date
  2012-10-19
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Stacking faults and luminescence property of In- GaN nanowires2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE 法による各種基板上 GaN系ナノワイヤ成長2012
- Author(s)
  水谷駿介,田畑拓也,中川慎太,山口雅史,天野浩,井村将隆,中山佳子,竹口雅樹
- Organizer
  第60回応用物理学会春期学術講演会
- Place of Presentation
  神奈川
- Year and Date
  2012-03-30
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Fabrication of High-Internal-Quantum-Efficiency Light Emitting Diodes on High Quality Bulk GaN Substrate2012
- Author(s)
  Hiroshi Amano
- Organizer
  Workshop on Frontier Photonic and Electronic Materials and Devices -2012 German-Japanese-Spanish Joint Workshop-
- Place of Presentation
  Berlin, Germany
- Invited
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] In and Impurity Incorporation in InGaN2012
- Author(s)
  Hiroshi Amano
- Organizer
  16th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE-16)
- Place of Presentation
  Busan, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] RF-MBE法によるガラス基板上InGaNナノ構造の作製2012
- Author(s)
  中川慎太, 田畑拓也, 本田善央, 山口雅史, 天野浩, 渕真悟, 竹田美和
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第4回　窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] LED開発の過去・現状及び将来2012
- Author(s)
  天野浩
- Organizer
  JSPS光エレクトロニクス第130委員会
- Place of Presentation
  森戸記念館、東京
- Year and Date
  2012-03-08
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Si基板上InGaNナノワイヤの積層欠陥と発光特性2012
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Challenge for the growth of high-In-content InGaN2012
- Author(s)
  T. DOI:, T. Ohata, T. Tabata, S. Nakagawa, Y. Kawai, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  III-V and III-N-based High Efficiency Solar Cells for Future Energy Harvesting(Invited)
- Place of Presentation
  Chiba, Japan
- Year and Date
  2012-05-11
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  The Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Electrical Transport Mechanism of Field Effect Transistors by AlN/Diamond Heterostructure2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on Diamond and Carbon Materials (Diamond2012)
- Place of Presentation
  the Granada Congress and Exhibitions Centre, Granada, Spain
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Stacking faults and luminescence property of In- GaN nanowires2012
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012
- Place of Presentation
  Sapporo
- Year and Date
  2012-10-19
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Field Effect Transistors by AlN/Diamond Heterostructure - past & future -.2012
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  Hasselt Diamond Workshop 2012 SBDD XVII(招待講演)
- Place of Presentation
  The cultuurcentrum Hasselt ,Hasselt,Belgium
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] RF-MBE 法によるガラス基板上 InGaN ナノ構造の作製2012
- Author(s)
  中川慎太,田畑拓也,本田善央,山口雅史, 天野浩, 渕真悟 , 竹田美和
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京
- Year and Date
  2012-04-28
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Si 基板上 InGaN ナノワイヤの積層欠陥と発光特性2012
- Author(s)
  田畑拓也,白知鉉,本田善央,山口雅史,天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] pチャネルAlN/Diamondヘテロ接合電界効果トランジスタ2012
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
- Organizer
  第31回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] In and Impurity Incorporation in InGaN2012
- Author(s)
  H. Amano
- Organizer
  16th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE-16) (Invited)
- Place of Presentation
  Busan, Korea
- Year and Date
  2012-05-23
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] RF-MBE法によるグラファイト基板上GaNナノワイヤの成長2012
- Author(s)
  中川慎太，田畑拓也，本田善央，山口雅史，天野　浩
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE 法によるグラファイト基板上 GaN ナノワイヤの成長2012
- Author(s)
  中川慎太,田畑拓也,本田善央,山口雅史,天野浩
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Year and Date
  2012-09-14
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 高In組成InGaN実用化にむけて2012
- Author(s)
  天野浩、山口雅史、本田善央、谷川智之、坂倉誠也、大畑俊也、田畑拓也
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 窒化物半導体エピタキシャル成長の新展開2012
- Author(s)
  天野浩
- Organizer
  第137回結晶工学分科会研究会「窒化物半導体光デバイスの最前線～基板・エピ成長と評価技術～」 (指定)
- Place of Presentation
  京都
- Year and Date
  2012-06-15
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] TEM-CBED法を用いたAlNの極性決定評価2012
- Author(s)
  井村将隆、中島清美、小出康夫、天野浩、津田健治
- Organizer
  第31回電子材料シンポジウム
- Place of Presentation
  ラフォーレ修善寺
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Si 基板上 III-V族化合物半導体ナノワイヤの成長と応用2012
- Author(s)
  山口雅史,白知鉉,田畑拓也,中川慎太, 本田善央, 天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 加圧MOVPE法によるInGaN結晶成長2012
- Author(s)
  坂倉誠也、土井友博、大畑俊也、谷川智之、本田善央、山口雅史、天野浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学、東京
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 原子層堆積法により成膜したアルミナゲート表面チャネルダイヤモンドFETの特性評価2012
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、MeiyongLiao、小出康夫、天野浩、松本翼、山崎聡
- Organizer
  第26回ダイヤモンドシンポジウム
- Place of Presentation
  青山学院大学青山キャンパス
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] GaN nanowires grown on a graphite substrate by RF-MBE2012
- Author(s)
  S. Nakagawa, T. Tabata, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  International Workshop on Nitride Semiconductors 2012(IWN2012)
- Place of Presentation
  札幌
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Polarity determination of AlN by convergent beam electron diffraction method based on transmission electron microscopy2012
- Author(s)
  M. Imura, K. Nakajima, Y. Koide, H. Amano, and K. Tsuda
- Organizer
  International Workshop on Nitride Semiconductors 2012 (IWN 2012)
- Place of Presentation
  Sapporo Convention Center,Sapporo,Japan
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 加圧MOVPE法によるInGaN/GaN MQW構造のIn組成揺らぎの改善2011
- Author(s)
  大畑俊也, 坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  春日、福岡
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] AlGaN量子井戸構造の光学的特性2011
- Author(s)
  山本準一、伴和仁、竹田健一郎、井手公康、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  Glasgow (U.K.)
- Year and Date
  2011-07-14
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE法による(111)Si基板上へのInGaNナノワイヤ成長2011
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  信学会電子デバイス(ED)研究会
- Place of Presentation
  名古屋ベンチャービジネスラボラトリー（愛知県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタの開発2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第25回ダイヤモンドシンポジウム
- Place of Presentation
  産業技術総合研究所共用講堂
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 紫外発光素子用反射電極の検討2011
- Author(s)
  竹原孝祐、竹田健一郎、永田賢吾、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides (Diamond2011)
- Place of Presentation
  Garmisch - Partenkirchen,Bavaria,German
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Growth of InGaN nanowires on a (111)Si substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  5th Asia-Pacific Workshop on Widegap Semiconductors
- Place of Presentation
  鳥羽国際ホテル（三重県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] Diamond Field Effect Transistors by AlN/Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  International Conference on New Diamond and Nano Carbons 2011 (NDNC2011)
- Place of Presentation
  Kunibiki Messe, Matsue, Japan
- Year and Date
  2011-05-19
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] High In Content InGaN for Solar Cell Applications2011
- Author(s)
  H.Amano
- Organizer
  ICNS9
- Place of Presentation
  Glasgow, UK(基調(招待)講演)(招待講演)
- Year and Date
  2011-07-11
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] MBE 法による Si 基板上化合物半導体ナノワイヤ成長と評価2011
- Author(s)
  山口雅史,白知鉉,田畑拓也,本田善央,天野浩
- Organizer
  第15回名古屋大学 VBL シンポジウム
- Place of Presentation
  名古屋
- Year and Date
  2011-11-08
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] AlN/ダイヤモンドヘテロ構造トランジスタ2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-26
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] AlN/Diamondヘテロ接合型ダイヤモンド電界効果トランジスタ2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  第72回応用応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Growth of InGaN Nanowires on a (111)Si Substrate by RF-MBE2011
- Author(s)
  T. Tabata, J.H. Paek, Y. Honda, M. Yamaguchi, and H. Amano
- Organizer
  9th International Conference on Nitride Semiconductors
- Place of Presentation
  Glasgow, U.K.
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] RF-MBE 法による(111)Si 基板上へのInGaN ナノワイヤの成長II2011
- Author(s)
  田畑拓也，白　知鉉，本田善央，山口雅史，天野　浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学（山形県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] AlGaN UV-LEDの光取り出し効率の改善2011
- Author(s)
  稲津哲彦、深堀真也、シリルペルノ、金明姫、藤田武彦、長澤陽祐、平野光、一本松正道、岩谷素顕、天野浩、竹内哲也、上山智、赤崎勇
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] β-Ga_2O_3(100)基板上GaN及びAlGaNの成長2011
- Author(s)
  伊藤駿、竹田健一郎、永田賢吾、青島宏樹、竹原孝祐、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High In content InGaN for solar cell applications2011
- Author(s)
  H. Amano
- Organizer
  9th International Conference on Nitride Semiconductors (ICNS-9) (Plenary)
- Place of Presentation
  Glasgow, UK
- Year and Date
  2011-07-11
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 石英基板上InGaN ナノワイヤの成長2011
- Author(s)
  山口雅史，田畑拓也，白　知鉉，本田善央，天野　浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学（山形県）
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] AlN/Diamondヘテロ接合型電界効果トランジスタの開発2011
- Author(s)
  井村将隆、早川竜馬、大里啓孝、渡辺英一郎、津谷大樹、廖梅勇、小出康夫、天野浩
- Organizer
  日本金属学会2011年秋
- Place of Presentation
  沖縄コンベンセンションセンター
- Year and Date
  2011-11-06
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 350nm帯紫外LED及びLD構造の注入効率向上2011
- Author(s)
  竹田健一郎、永田賢吾、竹原孝祐、青島宏樹、野中健太朗、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] レーザリフトオフ法による薄膜紫外LED2011
- Author(s)
  青島宏樹、竹田健一郎、永田賢吾、竹原孝祐、伊藤駿、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  (予稿集)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] RF-MBE 法による(111)Si 基板上への InGaN ナノワイヤの成長 II2011
- Author(s)
  田畑拓也,白知鉉,本田善央,山口雅史,天野浩
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Year and Date
  2011-09-02
- Data Source
  KAKENHI-PROJECT-23651146
[Presentation] 組成および井戸層厚を変調させたInGaN擬周期構造に関する研究2011
- Author(s)
  坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  第3回窒化物半導体結晶成長講演会
- Place of Presentation
  第3回窒化物半導体結晶成長講演会
- Year and Date
  2011-06-18
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Demonstration of AlN/Diamond Heterostructure Field Effect Transistors2011
- Author(s)
  M. Imura, R. Hayakawa, H. Oosato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  MANA International Symposium 2011 (MANA Sympo. 2011)
- Place of Presentation
  Epochal Tsukuba, Tsukuba, Japan
- Year and Date
  2011-03-03
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] Second- and third-generation nitride-based LEDs and challenge for future photovoltaic applications2011
- Author(s)
  T.Sano, T.Ohata, S.Sakakura, T.Tanikawa, Y.Honda, M.Yamaguchi, H.Amano, M.Mori, M.Iwaya, M.Imade, Y.Mori
- Organizer
  EDIS2011
- Place of Presentation
  生命ホール、大阪(招待講演)
- Year and Date
  2011-12-17
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Development of Diamond Field Effect Transistors by AlN / Diamond Heterostructure2011
- Author(s)
  M. Imura, R. Hayakawa, H. Ohsato, E. Watanabe, D. Tsuya, M. Y. Liao, Y. Koide, and H. Amano
- Organizer
  22nd European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes and Nitrides(Diamond2011)
- Place of Presentation
  Garmisch - Partenkirchen,Bavaria,German
- Year and Date
  2011-09-07
- Data Source
  KAKENHI-PROJECT-23760319
[Presentation] 加圧MOVPE法を用いたAlInNの結晶成長2011
- Author(s)
  三嶋晃, 牧野貴文, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 坂倉誠也, 谷川智之, 天野浩
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  学会中止により要旨集のみ
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Effect of high-quality GaN substrates on the improvement of performance of group-III-nitride-based devices2011
- Author(s)
  H.Amano, T.Sugiyama, T.Tanikawa, Y.Honda, M.Yamaguchi, Y.Isobe, A.Mishima, T.Makino, M.Iwaya, M.Imade, Y.Kitaoka, Y.Mori
- Organizer
  ECO-MATES2011
- Place of Presentation
  阪急ホテルエクスポパーク、大阪(招待講演)
- Year and Date
  2011-11-29
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 紫外～赤色LED究極効率を目指した窒化物半導体結晶成長技術2010
- Author(s)
  天野浩, 本田善央, 山口雅史
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会「GaN系プラネットコンシャスデバイス・材料の現状」
- Place of Presentation
  仙台
- Year and Date
  2010-11-05
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Development of High Efficiency 255-350 nm AlGaN-Based Light-Emitting Diodes2010
- Author(s)
  Cyril Pernot, Myunghee Kim, Shinya Fukahori, Tetsuhiko Inazu, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Organizer
  International Workshop on Nitride semiconductors (IWN 2010)
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] MgドープAlN下地層を用いた低転位AlGaNの転位挙動2010
- Author(s)
  野中健太朗, 浅井俊晶, 伴和仁, 山本準一, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 天野浩, Z.H.Wu
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Reduction in threshold current density of UV laser diode2010
- Author(s)
  Kengo Nagata, Kentaro Nonaka, Tomoki Ichikawa, Kenichiro Takeda, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Microstructure of Thick AlGaN Epilayers Using Mg-doped AlN Underlying Layer2010
- Author(s)
  K.Nonaka, T.Asai, K.Ban, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki, Z.H.Wu
- Organizer
  The 3rd International Symposium on Growth of III-Nitrides
- Place of Presentation
  Montpellier, France
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 紫外発光素子用透明電極の検討2010
- Author(s)
  深堀真也, シリルペルノ, 金明姫, 藤田武彦, 稲津哲彦, 長澤陽祐, 平野光, 一本松正道, 岩谷素顕, 上山智, 赤崎勇, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Transparent Electrode for UV Light-Emitting-Diodes2010
- Author(s)
  Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hisashi Sakurai, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano
- Organizer
  International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] MgドープAlN下地層を用いた高品質厚膜AlGaNの微細構造観察2010
- Author(s)
  野中健太朗、浅井俊晶、伴和仁、岩谷素顕、上山智、天野浩、赤崎勇、Zhihao Wu
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] ELO AlGaN下地層上に作製した紫外レーザダイオードの特性評価2010
- Author(s)
  竹田健一郎, 永田賢吾, 竹原孝祐, 青島宏樹, 伊藤駿, 押村吉徳, 岩谷素顕, 竹内哲也, 上山智, 天野浩, 赤崎勇, 吉田治正, 桑原正和, 山下陽滋, 菅博文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Injection Efficiency in AlGaN-based UV Laser Diode2010
- Author(s)
  Kengo Nagata, Kenichiro Takeda, Yoshinori Oshimura, Kosuke Takehara, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
- Organizer
  International Workshop on Nitride semiconductors (IWN2010)
- Place of Presentation
  Tampa, Florida USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 酸化ジルコニウムを用いたサファイア基板上LEDの作製2010
- Author(s)
  田村健太, 飯田大輔, 山口修司, 近藤俊行, 岩谷素顕, 竹内哲也, 上山智, 赤崎勇, 天野浩
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] UVレーザダイオードの閾値電流密度の低減2010
- Author(s)
  永田賢吾、野中健太朗、市川友紀、竹田健一郎、岩谷素顕、上山智、天野浩、赤崎勇、吉田治正、桑原正和、山下陽滋、菅博文
- Organizer
  第2回窒化物半導体結晶成長講演会
- Place of Presentation
  三重大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN2010
- Author(s)
  Hiroshi Amano, Masahito Yamaguchi, Yoshio Honda, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16)
- Place of Presentation
  Beijing, China(招待講演)
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Optical waveguide layers in UV laser diodes on the low dislocation density AlGaN underlying layer2010
- Author(s)
  Kenichiro Takeda, Tomoki Ichikawa, Kengo Nagata, Daisuke Sawato, Yuji Ogiso, Yoshinori Oshimura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan
- Organizer
  The 37th International Conference of Compound Semiconductors
- Place of Presentation
  Takamatsu, Japan
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation2010
- Author(s)
  Z.H.Wu, K.Nonaka, Y.Kawai, T.Asai, F.A.Ponce, C.Q.Chen, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Organizer
  The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Recent Developments and Future Prospects of LED Technologies for Displays and General Lighting2010
- Author(s)
  H.Amano
- Organizer
  The 17th International Display Workshop
- Place of Presentation
  福岡市・福岡国際会議場
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] Transmission-electron-microscope characterization of AlGaN/GaN heterostructure on miscut GaN substrate grown by Na flux method2010
- Author(s)
  Tatsuyuki Sakakibara, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Mamoru Imada, Yasuo Kitaoka, Yusuke Mori
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 高組成AlGaN量子井戸構造の光学的特性2010
- Author(s)
  伴和仁、竹田健一郎、山本準一、岩谷素顕、竹内哲也、上山智、赤崎勇、天野浩
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 昇華法による単結晶AlNの高速成長2010
- Author(s)
  山川雅康, 村田一喜, 岩谷素顕, 上山智, 竹内哲也, 赤崎勇, 天野浩, 東正信
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Atomic Layer Epitaxy of AlN and AlGaN and Raised Pressure MOVPE for the Growth of High In-content GaInN2010
- Author(s)
  H.Amano, M.Yamaguchi, Y.Honda, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  The 16th International Conference on Crystal Growth(ICCG-16) 招待講演
- Place of Presentation
  Beijing, China.
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 加圧MOVPE法を用いたInGaN結晶成長2010
- Author(s)
  坂倉誠也, 谷川智之, 本田善央, 山口雅史, 天野浩
- Organizer
  応用物理学会結晶工学分科会主催2010年・年末講演会「エレクトロニクスの将来ビジョン～発展史マップとアカデミックロードマップ～&若手ポスター発表会」
- Place of Presentation
  東京
- Year and Date
  2010-12-17
- Data Source
  KAKENHI-PROJECT-22246004
[Presentation] 世界を変えるGaN発光デバイス～低炭素社会実現の救世主となるために～2009
- Author(s)
  天野浩, 7月24日(金)
- Organizer
  【大阪大学光科学センター】光科学フォーラムサミット
- Place of Presentation
  千里阪急ホテルクリスタルホール
- Year and Date
  2009-07-24
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] p-AlGaNの活性化アニール特性2009
- Author(s)
  永田賢吾, 竹田健一郎, 市川友紀, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
- Place of Presentation
  東京農工大小金井キャンパス1号館1階ホール
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] モスアイ構造の作製と半導体発光素子への応用2009
- Author(s)
  上山智、瀬古知世、馬渕翔、岩谷素顕、天野浩、赤崎勇、寺前文晴、近藤俊行
- Organizer
  第161委員会、第162委員会合同研究会
- Place of Presentation
  鳥羽
- Year and Date
  2009-03-14
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] 斜めファセット面を用いたAlGaNの全面低転位化2009
- Author(s)
  竹田健一郎, 森史明, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 日本結晶成長学会ナノエピ分科会予稿集, SAT-18, (2009-5)
- Organizer
  第1回窒化物半導体結晶成長講演会「窒化物半導体結晶成長の未来を展望する」
- Place of Presentation
  東京農工大小金井キャンパス1号館1階ホール
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Defects in Highly Mg-Doped AlN2009
- Author(s)
  K.Nonaka, T.Asai, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Organizer
  The 8th International Conference on Nitride Semiconductors
- Place of Presentation
  済州島、韓国
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 持続可能な社会システム構築のための窒化物半導体の役割2009
- Author(s)
  天野浩
- Organizer
  第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大小金井キャンパス1号館1階ホール
- Year and Date
  2009-05-15
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Mg-doped AIN下地層を用いたAlGaN成長2009
- Author(s)
  浅井俊晶, 野中健太郎, 伴和仁, 永田賢昌, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇, SAT-2, pp.85, (2009-5)
- Organizer
  日本結晶成長学会ナノエピ分科会第1回窒化物半導体結晶成長講演会
- Place of Presentation
  東京農工大小金井キャンパス1号館1階ホール
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth of Low-Dislocation-Density AlGaN using Mg-Doped AlN Underlying Layer2009
- Author(s)
  T.Asai, K.Nonaka, K.Ban, K.Nagata, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  済州島、韓国
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Internal Quantum Efficiency of GaN/AlGaN Multi Quantum Wells on Different Dislocation Density Underlying Layer2009
- Author(s)
  Kenichiro Takeda, Fumiaki Mori, Yuji Ogiso, Tomoki Ichikawa, Kentaro Nonaka, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Organizer
  ICNS 8
- Place of Presentation
  済州島、韓国
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Past, present and future prospects of group III nitride based light emitting devices2009
- Author(s)
  天野浩
- Organizer
  2nd International Conference on Microelectronics and Plasma Technology(ICMAP 2009)
- Place of Presentation
  BEXCO Convention Center, Busan, Korea
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate2009
- Author(s)
  T. Seko, S. Mabuchi, F. Teramae, A. Suzuki, Y. Kaneko, R. Kawai, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki
- Organizer
  SPIE Photonics West. 2009
- Place of Presentation
  サンノゼ(米国)
- Year and Date
  2009-01-28
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate2009
- Author(s)
  瀬古知世、馬渕翔、寺前文晴、鈴木敦志、金子由基夫、河合良介、上山智、岩谷素顕、天野浩、赤崎勇
- Organizer
  SPIE Photonics West 2009
- Place of Presentation
  San Jose, USA
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes2009
- Author(s)
  H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  SIMC-XV 招待講演
- Place of Presentation
  Vilnius, Lithuania.
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth and Conductivity Control of High-Quality GaInN for the Realization of High Efficiency Photovoltaic Devices2009
- Author(s)
  H.Amano, Y.Kuwahara, Y.Fujiyama, Y.Morita, D.Iida, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  POEM2009
- Place of Presentation
  Wuhan, China
- Year and Date
  2009-08-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒化物半導体応用の波長範囲の拡大, -赤外から紫外まで-2009
- Author(s)
  天野浩
- Organizer
  赤崎先生京都賞受賞記念ワークショップ
- Place of Presentation
  京都国際会館
- Year and Date
  2009-11-12
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Challenge for short wavelength semiconductor UV laser diodes2009
- Author(s)
  H.Amano, H.Tsuzuki, T.Mori, K.Takeda, K.Nagamatsu, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  Proceedings of SPIE Volume 7216
- Place of Presentation
  San Jose Convention Center, USA
- Year and Date
  2009-01-28
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High Output Power AlGaN/GaN Ultraviolet Light Emitting Diodes by Activation of Mg-Doped P-Type AlGaN in Oxygen Ambient2009
- Author(s)
  Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
- Organizer
  ICNS 8
- Place of Presentation
  済州島、韓国
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 酸素雰囲気中でのp型AlGaNの活性化による高出力AlGaN/GaN紫外LED2009
- Author(s)
  永田賢吾, 竹田健一郎, 市川友紀, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  応用物理学会第70回応用物理学関連連合講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 活性化アニールによるp型Al_<0.17>Ga_<0.83>Nの正孔濃度と接触比抵抗の評価2009
- Author(s)
  永田賢吾, 竹田健一郎, 永松謙太郎, 都築宏俊, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  応用物理学会第56回応用物理学関連連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Revolutions in Solid State Lighting Technology2009
- Author(s)
  天野浩
- Organizer
  International Workshop on EEWS
- Place of Presentation
  Daejeon Convention Center, Korea
- Year and Date
  2009-09-02
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 文部科学省科研費特定領域研究窒化物光半導体のフロンティア企画「紫外発光素子の進展」2009
- Author(s)
  名西〓之、吉田治正、川上養一、平松和政、船戸充、川西英雄、平山秀樹、天野浩
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-ORGANIZER-18069013
[Presentation] Mg-doped AIN下地層によるAlGaNの低転位化の機構2009
- Author(s)
  浅井俊晶, 野中健太朗, 伴和仁, 永田賢昌, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 非極性a面p-GaNのMg濃度の最適化2009
- Author(s)
  田村健太、飯田大輔、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第70回応用物理学関係連合講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth and conductivity control of high quality AlGaN and its application to high performance ultraviolet laser diodes2009
- Author(s)
  H.Amano, S.A.Inada, K.Nagamatsu, K.Takeda, T.Asai, K.Nagata, K.Nonaka, T.Mori, H.Tsuzuki, M.Iwaya, S.Kamiyama, I.Akasaki
- Organizer
  SIMC-XV
- Place of Presentation
  Vilnius, Lithuania
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Mg-doped AIN下地層を用いた低転位AlGaNの微細構造観察2009
- Author(s)
  野中健太朗, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 9-a-X-2高品質GaN基板への期待2009
- Author(s)
  天野浩
- Organizer
  日本学術振興会第161委員会企画「GaN基板ウエハ実現の鍵を握る結晶育成・加工技術～その現状と課題、及び将来展望～」
- Place of Presentation
  黒田講堂ホール、富山
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] AlGaN中のMgの活性化エネルギー(II)2009
- Author(s)
  永松謙太郎, 浅井俊晶, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 高温MOVPEを用いたAlN周期溝上AlGaN中の転位密度のAlNモル分率依存性2008
- Author(s)
  浅井俊晶、住井隆文、加藤尚文、佐藤周夜、森俊晶、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(船橋校舎)
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Activation energy of Mg in AlGaN2008
- Author(s)
  K. Nagamatsu, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. and Akasaki
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Montreux, Swiss
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] NおよびAlをドープした6H-SiCの光学特性評価2008
- Author(s)
  三好晃平、上山智、岩谷素顕、天野浩、赤崎勇
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] Growth of Group III Nitrides For UV and Green Light Emitting Devices2008
- Author(s)
  H. Amano
- Organizer
  The 4th Asian Conference on Crystal Growth and Crystal Technology
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High efficiency UV LEDs and LDs2008
- Author(s)
  H. Amano
- Organizer
  5^<th> China International Forum on Solid State Lighting
- Place of Presentation
  Shenzhen, China
- Year and Date
  2008-07-26
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Short wavelength semiconductor laser diodes2008
- Author(s)
  H. Amano, H. Tsuzuki, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, I. Akasaki
- Organizer
  Japan- Brazil Memorial Symposium on Science and Technology for the Celebration of 100 Years of Japanese Immigration in Brazil
- Place of Presentation
  Universidade de Sao Paulo, Brazil
- Year and Date
  2008-06-25
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Relaxation process of Al_xGa_<1-x>N grown on high-crystalline-quality A1N2008
- Author(s)
  T. Asai, K. Nagata, T. Mori, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Organizer
  Technical Digest ISGN-2
- Place of Presentation
  伊豆
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] AlN上AlGaNの結晶回復過程と溝加工テンプレートによる低転位化2008
- Author(s)
  竹田健一郎, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  文部科学省科学研究費補助金特定領域研究公開シンポジウム「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」
- Place of Presentation
  東京
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Novel UV devices on high quality AlGaN using grooved template2008
- Author(s)
  H. Tsuzuki, F. Mori, K. Takeda, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, H. Kan
- Organizer
  Abstracts of the Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  伊豆
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer2008
- Author(s)
  H. Tsuzuki, F. Mori, K. Takeda, M. Twaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, H. Kan
- Organizer
  Abstracts of the International Workshop on Nitride semiconductors
- Place of Presentation
  Montreux, Swiss
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 高正孔濃度p型AlGaN2008
- Author(s)
  永松謙太郎, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  特定領域研究「窒化物光半導体のフロンティア-材料潜在能力の極限発現-」公開シンポジウム
- Place of Presentation
  東京
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Microstructure in Al_xGai_<1-x>N grown on AlN2008
- Author(s)
  Toshiaki Mori, Toshiaki Asai, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki
- Organizer
  International Workshop on Nitride semiconductors
- Place of Presentation
  Montreux, Swiss
- Year and Date
  2008-10-08
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Optimization of electrode configuration in large GaInN light-emitting2008
- Author(s)
  落合渉、河合良介、鈴木敦志、岩谷素顕、天野浩、上山智、赤崎勇
- Organizer
  diodes
- Place of Presentation
  Rust Germany
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] ELOを用いた高温MOVPE成長AlN/Sapphire基板上のUV-LD特性評価2008
- Author(s)
  都築宏俊, 森史明, 市川友紀, 竹田健一郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 吉田治正, 桑原正和, 山下陽滋, 菅博文
- Organizer
  第69回応用物理学会学術講演会講演予稿集
- Place of Presentation
  中部大
- Year and Date
  2008-09-05
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High-reflectivity Ag-based ohmic contacts for blue light-emitting diodes2008
- Author(s)
  河合良介、森俊晶、落合渉、鈴木敦志、岩谷素顕、天野浩、上山智、赤崎勇
- Organizer
  International Workshop on Nitride Semiconductors 2008
- Place of Presentation
  Monteux, Switzerland
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] 周期溝下地結晶を用いたAl_<0.5>Ga_<0.5>Nの低転位化2008
- Author(s)
  竹田健一郎, 森史明, 小木曽裕二, 森俊晶, 浅井俊晶, 永松謙太郎, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] ELOを用いた高温MOVPE成長AlN/サファイア基板上の高効率UV LED2008
- Author(s)
  都築宏俊、森史明、市川友紀、竹田健一郎、渡邊浩崇、飯田一喜、岩谷素顕、上山智、天野浩、赤崎勇、坂東章
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(船橋校舎)
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Growth of Group III Nitrides For UV and Green Light Emitting Devices2008
- Author(s)
  H. Amano
- Organizer
  The 4^<th> Asian Conference on Crystal Growth and Crystal Technology, Sendai, Japan
- Place of Presentation
  仙台
- Year and Date
  2008-05-22
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] AlGaN中のMgの活性化エネルギー2008
- Author(s)
  永松謙太郎、岡田成仁、井村将隆、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(船橋校舎)
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Microstructure of AlN grown on SiC by high-temperature metalorganic vapor phase epitaxy and epitaxial lateral overgrowth2007
- Author(s)
  M. Imura, N. Okada, B. Krishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Organizer
  The 13th Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Extremely Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by High Temperature MOVPE2007
- Author(s)
  B. Krishnan, H. Sugimura, A. Band oh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  The 7th International Conference of Nitride Semi conductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Stimulated Emission from Nonpolar and Polar AlN2007
- Author(s)
  N. Okada, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani, Y. Yamada
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Nitride-Based UV Lasers2007
- Author(s)
  H. Amano, N. Kato, N. Okada, T. K awashima, K. Iida, K. Nagamatsu, M. Imura, K. Balakrishnan, M. Iwaya, S. Kamiyama and I. Akasaki
- Organizer
  The 20th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS 2007)
- Place of Presentation
  Florida, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] p型GaNゲートを用いた低オン抵抗ノーマリーオフ型AlGaN/GaN Junction HFETs2007
- Author(s)
  根賀亮平、藤井隆弘、中村彰吾、露口士夫、川島毅士、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  春季第54回応用物理学会関係連合講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] p型GaNゲートを用いた高出力低損失normally-off型AlGaN/GaNHFETs2007
- Author(s)
  藤井隆弘、露口士夫、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  春季第54回応用物理学会関係連合講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2007-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] p型GaNゲートを用いたnormally-off型A1GaN/GaN HFETsの構造最適化2007
- Author(s)
  水野克俊、藤井隆弘、中村彰吾、根賀亮平、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] UV Emitters Grown on High Crystalline Quality AlGaN on Sapphire2007
- Author(s)
  K. Iida, F. Mori, H. Watanabe, K. Takeda, K. Nagamatsu, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama. T. Takagi. A. Bandoh
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High drain current and low loss normally-off-mode AIGaN/GaN junction HFETs with p-type GaN gate contact2007
- Author(s)
  T. Fujii, S. Nakamura, K. Mizuno, R. Nega, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Organizer
  Group 45 Japan Society for Promotion of Science No. 110 Meeting
- Year and Date
  2007-04-06
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Internal Quantum Efficiency of Al_xGa_<1-x>N (0<x<1) on AlN Template2007
- Author(s)
  N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. Bando, H. Murotani, Y. Yamada
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒素およびホウ素をドープした6H-SiCにおけるDAP発光の温度特性評価2007
- Author(s)
  村田諭是、柴田陽子、生田美奈、杉浦正明、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工大
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] Critical Issue in Growing High Quality Thick AlGaN by High-Temperature MOVPE2007
- Author(s)
  N. Kato, T. Sumii, S. Sato, H. Sugimura, N. Okada, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Maruyama, T. Takagi, A. B andoh
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 「窒化物の新展開」特定領域研究企画「窒化物光半導体のフロンティア」-材料潜在能力の極限発現-2007
- Author(s)
  名西〓之、藤岡洋、纐纈明伯、吉川明彦、川上養一、上殿明良、天野浩、平山秀樹、岸野克巳
- Organizer
  2007年秋季第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-05
- Data Source
  KAKENHI-ORGANIZER-18069013
[Presentation] 窒素およびホウ素をドープした6H-SiCにおけるDAP発光の温度特性評価2007
- Author(s)
  村田諭是, 柴田陽子, 生田美奈, 杉浦正明, 岩谷素顕, 上山智, 天野浩, 赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] High temperature metalorganic vapor phase epitaxial growth of AlN and AlGaN for fabrication of high performance UV/DUV emitters2007
- Author(s)
  K. Balakrishnan, Kazuyoshi Iida, H. Watanabe, H. Amano, M. Iwaya, I. Akasaki
- Organizer
  17th International Vacuum Congress(IVC-17),
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒素およびホウ素をドープした6H-SiCのアニール効果2007
- Author(s)
  柴田陽子, 村田諭是, 生田美奈, 杉浦正明, 林啓二, 岩谷素顕, 上山智, 天野浩, 赤崎勇, 新田州吾, 木下博之
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] Effect of sapphire mis-orientation on the growth of AlN by high temperature MOVPE2007
- Author(s)
  K. Nagamatsu, N. Okada, N. Kato, T. Sumii, A. Bando, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  The 7th International Conference of Nitride Semiconductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 紫外発光素子への期待とIII族窒化物半導体を用いた紫外発光素子の高性能化2007
- Author(s)
  天野浩, 岩谷素顕, 上山智, 赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒化物系半導体の最近の動向と課題2007
- Author(s)
  天野浩
- Organizer
  日本学術振興会結晶加工と評価技術第45委員会 110回研究会
- Place of Presentation
  四ツ谷、東京
- Year and Date
  2007-06-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] High drain current and low loss normally-off-mode AlGaN/GaN junction HFETs with p-type GaN gate contact2007
- Author(s)
  T.Fujii, S.Nakamura, K.Mizuno, R.Nega, M.Iwaya, S.Kamiyama, H.Amano and I.Akasaki
- Organizer
  The 7th International Conference on Nitride Semiconductors(ICNS-7)
- Place of Presentation
  Las Vegas,U.S.A
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Epitaxial lateral overgrowth of low dislocation density AlN by high temperature MOVPE and fabrication of UV optoelectronics devices2007
- Author(s)
  K. Nagamatsu, N. Okada, F. Mori, K. Iida, M. Imura, K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  The 13th Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] High drain current and low loss normally-off-mode AlGaN/GaN junction HFETs with p-type GaN gate contact2007
- Author(s)
  T. Fujii, S. Nakamura, K. Mizuno, R. Nega, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
- Organizer
  The 7th International Conference on Nitride Semiconductors(ICNS-7)
- Place of Presentation
  Las Vegas, U. S. A
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Technical issues for the realization of new functional nitride-based optical and electron devices2007
- Author(s)
  H. Amano
- Organizer
  No. 68 Japan Society for Applied Physics Annual Meeting
- Year and Date
  2007-09-04
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] <デバイスの立場から> 窒化物半導体光・電子デバイス極限機能創出のための結晶成長の技術課題2007
- Author(s)
  天野浩
- Organizer
  日本結晶成長学会特別講演会・日本学術振興会第161委員会第54回研究会
- Place of Presentation
  千駄ヶ谷、東京
- Year and Date
  2007-04-13
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] High temperature MOVPE growth-a novel approach to grow high quality AlN layers2007
- Author(s)
  B. Krishnan, M. Imura, S. Satoh, H. Sugimura, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki
- Organizer
  The 13th Conference on Vapor Growth and Epitaxy
- Place of Presentation
  Salt Lake City, Utah, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] Microstructure of Threading Dislocations Caused by Grain Boundaries in AlN on Sapphire Substrate2007
- Author(s)
  M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, A. Bandoh
- Organizer
  The 7th International Conference of Nitride Semi conductors
- Place of Presentation
  Las Vegas, Nevada, USA
- Data Source
  KAKENHI-PLANNED-18069011
[Presentation] 窒素およびホウ素をドープした6H-SiCのアニール効果2007
- Author(s)
  柴田陽子、村田諭是、生田美奈、杉浦正明、林啓二、岩谷素顕、上山智、天野浩、赤崎勇、新田州後、木下博之
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工大
- Data Source
  KAKENHI-PROJECT-18560353
[Presentation] <デバイスの立場から>窒化物半導体光・電子デバイス極限機能創出のための結晶成長の技術課題2007
- Author(s)
  天野浩
- Organizer
  日本結晶成長学会特別講演会・日本学術振興会第161委員会第54回研究会
- Place of Presentation
  千駄ケ谷、東京
- Year and Date
  2007-04-13
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] p型GaNゲートを用いたnormally-off型AlGaN/GaN HFETsの構造最適化2007
- Author(s)
  水野克俊、藤井隆弘、中村彰吾、根賀亮平、岩谷素顕、上山智、天野浩、赤崎勇
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Year and Date
  2007-09-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Recent development of nitride semiconductors2006
- Author(s)
  H. Amano
- Organizer
  THE 55th JAPAN NATIONAL CONGRESS ON THEORETICAL AND APPLIED MECHANICS
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2006-01-24
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-18206036
[Presentation] Demonstration of GaInN-based laser pumped by an electron beam
- Author(s)
  M. Iwaya, K. Kozaki, T. Yamada, T. Takeuchi, S. Kamiyama, I. Akasaki, Y. Honda, H. Amano, S. Iwayama, J. Matsuda, N. Matsubara, and T. Matsumoto
- Organizer
  International workshop on nitride semiconductors
- Place of Presentation
  ヴロツワフ/ポーランド
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Morphology Control of GaN-based Nano-LEDs Grown by Pulsed-mode MOCVD Epitaxy and its Material/Optical Chracterization
- Author(s)
  Si-Young Bae, Byung Oh Jung, Jun-Yeob Lee, Jung-Hong Min, Dong-Seon Lee, Yoshihiro Kato, Masataka Imura, Yoshio Honda, and Hiroshi Amano
- Organizer
  ENGE2014
- Place of Presentation
  Jeju, Korea
- Year and Date
  2014-11-17 – 2014-11-20
- Invited
- Data Source
  KAKENHI-PROJECT-14F04366
[Presentation] Dislocation Density Dependence of Modal Gain in AlGaN/AlN Multiquantum Wells
- Author(s)
  Tomoaki Yamada, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, and Hiroshi Amano
- Organizer
  5th International Symposium on Growth of III-Nitrides
- Place of Presentation
  アトランタ/アメリカ
- Year and Date
  2014-05-18 – 2014-05-22
- Data Source
  KAKENHI-PROJECT-25000011
[Presentation] Growth of Highly Ordered GaN Nanorod Light-Emitting Didoes on Si-Based AlN Template for Epitaxial Transfer
- Author(s)
  Si-Young Bae, Byung Oh Jung, Ho-Jun Lee, Kaddour Lekhal, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano
- Organizer
  LEDIA15
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2015-04-22 – 2015-04-24
- Data Source
  KAKENHI-PROJECT-14F04366
[Presentation] スパッタ法AlNテンプレート基板を用いたAlNのHVPE成長
- Author(s)
  安井大貴、三宅秀人、平松和政、岩谷素顕、赤崎勇、天野浩
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  平塚市
- Year and Date
  2015-03-11 – 2015-03-14
- Description
  【発表確定】
- Data Source
  KAKENHI-PROJECT-25000011

1. AKASAKI Isamu (20144115)

# of Collaborated Projects: 12 results

# of Collaborated Products: 1 results
2. IWAYA Motoaki (40367735)

# of Collaborated Projects: 6 results

# of Collaborated Products: 218 results
3. KAMIYAMA Satoshi (10340291)

# of Collaborated Projects: 4 results

# of Collaborated Products: 166 results
4. HONDA Yoshio (60362274)

# of Collaborated Projects: 4 results

# of Collaborated Products: 100 results
5. YAMAGUCHI Masahito (20273261)

# of Collaborated Projects: 3 results

# of Collaborated Products: 38 results
6. BAE SI-YOUNG

# of Collaborated Projects: 3 results

# of Collaborated Products: 39 results
7. NARITSUKA Shigeya (80282680)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. IMURA Masataka (80465971)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
9. KOIDE Yasuo (70195650)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
10. 平松和政 (50165205)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. NANISHI Yasushi (40268157)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
12. YOSHIKAWA Akihiko (20016603)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
13. KISHINO Katsumi (90134824)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
14. KAWAKAMI Yoichi (30214604)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
15. ARAKI Tsutomu (20312126)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. FUNATO Mitsuru (70240827)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
17. MARUYAMA Takahiro (30282338)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. DEKI Manato (80757386)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
19. OHNO Yutaka (10324451)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. MIYAKE Hideto (70209881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
21. TAKEUCHI Tetsuya (10583817)

# of Collaborated Projects: 1 results

# of Collaborated Products: 32 results
22. FUKUYAMA Hiroyuki (40252259)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 森田明理 (30264732)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
24. 澤木宣彦 (70023330)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. 田中成泰 (70217032)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
26. SASAKI Akio

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. TAKAHASHI Kiyoshi

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
28. NISHINAGA Tatau

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
29. 橋本雅文

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
30. AVIT GEOFFREY

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
31. SCHIMMEL SASKIA

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
32. 宇佐美徳隆

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

AMANO HIROSHI 天野 浩

天野 浩 アマノ ヒロシ

AMANO Hiroshi 天野 浩

矢野 浩 ヤノ ヒロシ

Research Projects

Research Products

Co-Researchers

High-Power Coherent THz Source Based on GaN IMPATTsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Growth of high-quality bulk GaN substrate by ammonothermal methodPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

nGaN nanorod-based energy-harvesting/energy-saving devices/systemsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

無触媒窒化物系ナノワイヤの有機金属化合物気相成長と太陽光発電素子応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

無触媒窒化物系ナノワイヤの有機金属化合物気相成長と太陽光発電素子応用Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxyPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Growth of high-quality thick InGaN by raised-pressure MOVPEPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Watt class high power ultraviolet laser diodePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

AMANO HIROSHI 天野浩

天野浩アマノヒロシ

AMANO Hiroshi 天野浩

矢野浩ヤノヒロシ