Kawamura Takahiro 河村貴宏

Researcher Number	80581511
Other IDs
Affiliation (Current)	2025: 三重大学, 工学研究科, 助教
Affiliation (based on the past Project Information) *help	2016 – 2024: 三重大学, 工学研究科, 助教 2015: 三重大学, 工学(系)研究科(研究院), 助教
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Crystal engineering Except Principal Investigator Medium-sized Section 30:Applied physics and engineering and related fields / Basic Section 30010:Crystal engineering-related / Science and Engineering
Keywords	Principal Investigator 不純物 / OVPE成長 / 第一原理計算 / 結晶成長 / 窒化ガリウム / Naフラックス成長 Except Principal Investigator 低転位 / 気相成長 / 低抵抗 / GaN … More / OVPE / 結晶成長 / マルチフィジクスシミュレーション / シミュレーション / SiC / 機械学習 / 格子定数 / 欠陥評価 / PNダイオード / 超格子 / 転位 / 偏析 / 窒化物混晶半導体 / 特異構造場 / 結晶工学 / 計算物理 / 量子ドット / 自然超格子 / 組成変調 / 極性反転 / ボンドエンジニアリング / ナノ構造 / 窒化物半導体 / 特異構造 / 計算科学 Less

Complex crystal growth modeling and process design in latent space
- Principal Investigator
  
  宇治原徹
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Nagoya University
Growth of a thick GaN crystal with extremely low resistivity by the OVPE method
- Principal Investigator
  
  Mori Yusuke
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka University
Study of thick GaN crystals with low-dislocation density by the vapor phase epitaxy with an oxide gallium source
- Principal Investigator
  
  Imanishi Masayuki
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Osaka University
Investigation of vapor phase epitaxy growth conditions for high quality bulk GaN and their crystal growth processPrincipal Investigator
- Principal Investigator
  
  Kawamura Takahiro
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Mie University
Computational materials design for hetero-bond manipulation
- Principal Investigator
  
  ITO Tomonori
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Mie University
Clarification of crystal growth mechanism for development of large bulk GaN single crystalPrincipal Investigator
- Principal Investigator
  
  Kawamura Takahiro
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Mie University

All 2022 2021 2020 2019 2018 2017 2016 2015

All Journal Article Presentation

[Journal Article] Influence of oxygen-related defects on the electronic structure of GaN2022
- Author(s)
  Satoshi Ohata, Takahiro Kawamura, Toru Akiyama, Shigeyoshi Usami, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Tomoaki Sumi, and Junichi Takino
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Pages: 061004-061004
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02639
[Journal Article] Computational discovery of stable phases of graphene and h-BN van der Waals heterostructures composed of group III-V binary compounds2021
- Author(s)
  Akiyama Toru、Kawamura Takahiro、Ito Tomonori
- Journal Title
  
  Applied Physics Letters
  
  Volume: 118 Issue: 2 Pages: 023101-023101
- DOI
  10.1063/5.0032452
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] Activation free energies for formation and dissociation of N-N, C-C, and C-H bonds in a Na-Ga melt2021
- Author(s)
  Kawamura Takahiro、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada
- Journal Title
  
  Computational Materials Science
  
  Volume: 194 Pages: 110366-110366
- DOI
  10.1016/j.commatsci.2021.110366
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-18K04957, KAKENHI-PROJECT-20H02639
[Journal Article] Absolute surface energies of oxygen-adsorbed GaN surfaces2020
- Author(s)
  Kawamura Takahiro、Akiyama Toru、Kitamoto Akira、Imanishi Masayuki、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 549 Pages: 125868-125868
- DOI
  10.1016/j.jcrysgro.2020.125868
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-19K05268, KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-18K04957
[Journal Article] First‐Principles Calculation of Bandgaps of Al1- xInxN Alloys and Short‐Period Al1-xInxN/Al1-yInyN Superlattices2020
- Author(s)
  Kawamura Takahiro、Fujita Yuma、Hamaji Yuya、Akiyama Toru、Kangawa Yoshihiro、Gorczyca Izabela、Suski Tadeusz、Wierzbowska Maigorzata, Krukowski Stanisiaw
- Journal Title
  
  physica status solidi (b)
  
  Volume: 257 Issue: 4 Pages: 1900530-1900530
- DOI
  10.1002/pssb.201900530
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K05324, KAKENHI-PLANNED-16H06418
[Journal Article] First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth2018
- Author(s)
  Kawamura Takahiro、Kitamoto Akira、Imade Mamoru、Yoshimura Masashi、Mori Yusuke、Morikawa Yoshitada、Kangawa Yoshihiro、Kakimoto Koichi、Akiyama Toru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 11 Pages: 115504-115504
- DOI
  10.7567/jjap.57.115504
- NAID
  210000149765
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04957, KAKENHI-PLANNED-16H06418, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010, KAKENHI-INTERNATIONAL-15K21719
[Journal Article] First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under the oxide vapor phase epitaxy growth conditions2017
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Journal Title
  
  Physica Status Solidi B
  
  Volume: 印刷中 Issue: 8 Pages: 1600706-1600706
- DOI
  10.1002/pssb.201600706
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15K13351, KAKENHI-PROJECT-15K17459, KAKENHI-INTERNATIONAL-15K21719, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010
[Journal Article] Mechanism for enhanced single-crystal GaN growth in the C-assisted Na-flux method2016
- Author(s)
  T. Kawamura, H. Imabayashi, M. Maruyama, M. Imade, M. Yoshimura, Y. Mori, and Y. Morikawa
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 1 Pages: 015601-015601
- DOI
  10.7567/apex.9.015601
- NAID
  210000137759
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26410014, KAKENHI-PROJECT-15K17459, KAKENHI-ORGANIZER-26105001, KAKENHI-PLANNED-26105010
[Presentation] Influence of Point and Complex Defects on Electronic Structure of GaN2022
- Author(s)
  Takahiro Kawamura, Satoshi Ohata, Toru Akiyama, Shigeyoshi Usami, Masayuki Imanishi, Masashi Yoshimura, and Yusuke Mori
- Organizer
  9th International Conference on Light-Emitting Devices and Their Industrial Applications　(LEDIA2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] GaNの熱伝導率に対する点欠陥の影響2022
- Author(s)
  河村貴宏，西山稜悟，秋山亨，宇佐美茂佳，今西正幸，吉村政志，森勇介
- Organizer
  第14回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Effect of point and complex defects on optical properties of GaN2022
- Author(s)
  河村貴宏，大畑智嗣，場崎航平，宇佐美茂佳，今西正幸，吉村政志，森勇介
- Organizer
  光・量子ビーム科学合同シンポジウム2022
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] GaN中の点欠陥が光学特性に与える影響の解明2021
- Author(s)
  大畑智嗣, 河村貴宏, 今西正幸, 吉村政志, 森勇介
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02639
[Presentation] Change of the effective bandgaps of InN/AlN superlattices due to lattice distortion2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Magorzata Wierzbowska, and Stanisaw Krukowski
- Organizer
  International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるIII-V族化合物-グラフェン超格子の構造および電子状態解析2021
- Author(s)
  秋山亨, 河村貴宏, 伊藤智徳
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Bandgaps of InN/AlN superlattices and AlInN alloys: Influence of composition and strain2021
- Author(s)
  Takahiro Kawamura, Akito Korei, Kouhei Basaki, Toru Akiyama, Yoshihiro Kangawa, Izabela　Gorczyca,　Tadeusz　Suski,　Malgorzata　Wierzbowska,　and　Stanislaw Krukowski
- Organizer
  Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Calculation of Electronic Structure of GaN with Point and Complex Defects2021
- Author(s)
  Satoshi Ohata, Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, and Yusuke Mori
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Influence of Lattice Distortion on the Effective Bandgaps of Polar InN/AlN Superlattices2021
- Author(s)
  Kouhei Basaki, Akito Korei, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] NaフラックスGaN成長における融液中のNとC原子に関する結合状態の第一原理計算2019
- Author(s)
  河村貴宏，村田拓郎，今西正幸，吉村政志，森勇介，森川良忠
- Organizer
  第48回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Relationship between the band gap of InN/AlN SLs and lattice distortion2019
- Author(s)
  Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 酸素不純物を考慮したGaN表面エネルギーの面方位依存性2019
- Author(s)
  河村貴宏，北本啓，今西正幸，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるNa―Ga 融液中のN―N，C―C およびC―H 結合状態の解析2019
- Author(s)
  河村貴宏，今西正幸，吉村政志，森勇介，森川良忠
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] キンクおよびステップ構造を持つGaN極性表面におけるO不純物の脱離エネルギーの解析2019
- Author(s)
  河村貴宏，竹田浩基，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  2019 年第66 回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Band gaps in short period superlattices consisted of different compositional AlInN alloys2019
- Author(s)
  Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 7th International Conference on Light-Emitting Devices and Their Industrial Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] キンクおよびステップ構造を持つGaN極性表面におけるO不純物の脱離エネルギーの解析2019
- Author(s)
  河村貴宏、竹田浩基、北本啓、今西正幸、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04957
[Presentation] First-Principles Calculation of Band Gaps of Al1-xInxN Alloys and Short Period Al1-xInxN/Al1-yInyN Superlattices2019
- Author(s)
  Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, Yoshihiro Kangawa, Izabela　Gorczyca,　Tadeusz　Suski,　Magorzata　Wierzbowska,　and　Stanisaw Krukowski
- Organizer
  13th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 酸素不純物を考慮したGaN表面エネルギーの面方位依存性2019
- Author(s)
  河村貴宏，北本啓，今西正幸，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-18K04957
[Presentation] InN/AlN超格子構造におけるバンドギャップに対する格子不整合の影響2019
- Author(s)
  浜地祐矢，河村貴宏，秋山亨，寒川義裕
- Organizer
  第11回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles calculation of absolute surface energies of GaN during oxide vapor phase epitaxy growth2019
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04957
[Presentation] First-principles calculation of absolute surface energies of GaN during oxide vapor phase epitaxy growth2019
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  19th International Conference on Crystal Growth and Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] InN/AlN超格子構造のバンドギャップと格子歪みとの関係2019
- Author(s)
  浜地祐矢，河村貴宏，秋山亨，寒川義裕
- Organizer
  2019年秋季第80回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE成長条件下におけるGaN表面構造およびO不純物の脱離エネルギーの解析2018
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] First-Principles Calculations of GaN Surface Structures under OVPE Growth Conditions and Desorption Energies of Oxygen Impurities2018
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04957
[Presentation] OVPE成長条件下におけるGaN表面構造およびO不純物の脱離エネルギーの解析2018
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  2018年春季第65回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Calculations of GaN Surface Structures under OVPE Growth Conditions and Desorption Energies of Oxygen Impurities2018
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  The 19th International Conference on Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Investigation of Compositional Dependence of Band Gaps in AlN/InN and InN/GaN Superlattices2018
- Author(s)
  Yuma Fujita, Yuya Hamaji, Takahiro Kawamura, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Malgorzata Wierzbowska, Stanislaw Krukowski
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるGaN結晶成長に関する研究2018
- Author(s)
  河村貴宏
- Organizer
  第47回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] III族窒化物半導体超格子におけるバンドギャップの組成依存性2018
- Author(s)
  河村貴宏，藤田裕真，浜地祐矢，秋山亨，寒川義裕
- Organizer
  2018 年秋季第79 回応用物理学会学術講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles analysis of oxygen adsorption on kinked GaN(0001) surface2018
- Author(s)
  Hiroki Takeda, Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるGaN結晶成長に関する研究2018
- Author(s)
  河村貴宏
- Organizer
  第47回結晶成長国内会議
- Invited
- Data Source
  KAKENHI-PROJECT-18K04957
[Presentation] First-principles analysis of oxygen adsorption on kinked GaN(0001) surface2018
- Author(s)
  Hiroki Takeda, Takahiro Kawamura, Akira Kitamoto, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  The International Workshop on Nitride Semiconductors 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04957
[Presentation] Compositional Dependence of Band Gaps in III-Nitride Semiconductor Superlattices2018
- Author(s)
  Takahiro Kawamura, Toru Akiyama, and Yoshihiro Kangawa
- Organizer
  The 7th International Symposium of Growth of III-Nitrides
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] AlInN超格子構造におけるバンドギャップの組成依存性2018
- Author(s)
  藤田裕真，河村貴宏，鈴木泰之，秋山亨，寒川義裕
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算によるAlN/InN超格子のバンドギャップ解析2018
- Author(s)
  河村貴宏，藤田裕真，浜地祐矢，秋山亨，寒川義裕
- Organizer
  日本学術振興会　ワイドギャップ半導体光・電子デバイス第162委員会　第110回研究会・特別公開シンポジウム
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE成長条件下におけるGaN(0001)面のkink表面構造の解析2018
- Author(s)
  竹田浩基、河村貴宏、鈴木泰之、北本啓、今西正幸、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  第10回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-18K04957
[Presentation] OVPE法によるGaN成長における極性および非極性GaN表面構造の解析2017
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Study of Non-Polar GaN Surfaces under the OVPE Growth Conditions2017
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
- Organizer
  he 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] OVPE法によるGaN成長における極性および非極性GaN表面構造の解析2017
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] First-principles study of semipolar GaN (10-11) surfaces under oxide vapor phase epitaxy growth conditions2017
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
- Organizer
  The E-MRS 2017 Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] 第一原理計算を用いたOVPE成長中の半極性GaN表面構造の解析2017
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  第46回結晶成長国内会議
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] 分子動力学法によるAlNバッファ層のひずみ緩和シミュレーション2017
- Author(s)
  森本由成，河村貴宏，鈴木泰之，寒川義裕，柿本浩一
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] 第一原理計算を用いたOVPE成長中の半極性GaN表面構造の解析2017
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第46回結晶成長国内会議
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE成長条件下におけるGaN非極性表面構造の第一原理計算2017
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] OVPE成長条件下におけるGaN非極性表面構造の第一原理計算2017
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-principles study of semipolar GaN (10-11) surfaces under oxide vapor phase epitaxy growth conditions2017
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  E-MRS Fall Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Study of Non-Polar GaN Surfaces under the OVPE Growth Conditions2017
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  The 12th International Conference on Nitride Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Molecular dynamics simulation of strain relaxation of AlN buffer layer2017
- Author(s)
  Yusei Morimoto, Takahiro Kawamura, Yasuyuki Suzuki, Yoshihiro Kangawa, and Koichi Kakimoto
- Organizer
  International Workshop on UV Materials and Devices 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE法によるGaN成長におけるGaN(0001) 表面構造の検討2016
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都・目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] 第一原理計算によるOVPE成長条件下におけるGaN(000-1)表面構造の解析2016
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] Activation free energies for formation and dissociation of N-N bond in a Na-Ga melt2016
- Author(s)
  Takahiro Kawamura, Hiroki Imabayashi, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa
- Organizer
  第35回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖（滋賀県・守山市）
- Year and Date
  2016-07-06
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] 第一原理計算によるOVPE成長条件下におけるGaN(000-1)表面構造の解析2016
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] First-Principles Study of Surface Phase Diagrams of GaN(0001) and (000-1) under the Oxide Vapor Phase Epitaxy Growth Conditions2016
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando, Florida, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] First-Principles Study of Surface Phase Diagrams of GaN(0001) and (000-1) under the Oxide Vapor Phase Epitaxy Growth Conditions2016
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Organizer
  International Workshop on Nitride Semiconductors 2016
- Place of Presentation
  Orlando（USA）
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] OVPE成長条件下におけるGaN(0001)表面状態の解析2016
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠，寒川義裕，柿本浩一
- Organizer
  第8回窒化物半導体結晶成長講演会
- Place of Presentation
  京都大学（京都府・京都市）
- Year and Date
  2016-05-09
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] Stable Structure of GaN(0001) under the OVPE Growth Conditions2016
- Author(s)
  T. Kawamura, A. Kitamoto, M. Imade, M. Yoshimura, Y. Mori, Y. Morikawa, Y. Kangawa, and K. Kakimoto
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06418
[Presentation] Stable Structure of GaN(0001) under the OVPE Growth Conditions2016
- Author(s)
  Takahiro Kawamura, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa, Yoshihiro Kangawa, Koichi Kakimoto
- Organizer
  18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] Change of C-N Bonding State in Carbon-Added Na-Flux Growth of GaN2015
- Author(s)
  Takahiro Kawamura, Hiroki Imabayashi, Mihoko Maruyama, Mamoru Imade, Masashi Yoshimura, Yusuke Mori, Yoshitada Morikawa
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  アクトシティ浜松（静岡県・浜松市）
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] Na-Ga融液中のCNイオンの状態密度解析2015
- Author(s)
  河村貴宏，今林弘毅，丸山美帆子，今出完，吉村政志，森勇介，森川良忠
- Organizer
  第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学（宮城県・仙台市）
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] 第一原理計算によるGaN(0001)表面へのGa2Oの吸着に関する研究2015
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K17459
[Presentation] GaN(0001)および(000-1)表面へのGa2O分子の吸着に関する第一原理計算2015
- Author(s)
  河村貴宏，北本啓，今出完，吉村政志，森勇介，森川良忠
- Organizer
  第45回結晶成長国内会議
- Place of Presentation
  北海道大学（北海道・札幌市）
- Year and Date
  2015-10-19
- Data Source
  KAKENHI-PROJECT-15K17459

1. Mori Yusuke (90252618)

# of Collaborated Projects: 2 results

# of Collaborated Products: 16 results
2. 寒川義裕 (90327320)

# of Collaborated Projects: 2 results

# of Collaborated Products: 40 results
3. 上殿明良 (20213374)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
4. 津坂佳幸 (20270473)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
5. ITO Tomonori (80314136)

# of Collaborated Projects: 1 results

# of Collaborated Products: 4 results
6. Imanishi Masayuki (00795487)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
7. 秋山亨 (40362363)

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
8. 正直花奈子 (60779734)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 平松和政 (50165205)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 酒井朗 (20314031)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 宇治原徹 (60312641)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 原田俊太 (30612460)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 烏山昌幸 (40628640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 岡野泰則 (90204007)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 沓掛健太朗 (00463795)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. MORIKAWA Yoshitada

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
17. YOSHIMURA Masashi

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
18. IMADE Mamoru

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
19. KAKIMOTO Koichi

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results

Kawamura Takahiro 河村 貴宏

Research Projects

Research Products

Co-Researchers

Complex crystal growth modeling and process design in latent space

Principal Investigator

Project Period (FY)

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Research Institution

Growth of a thick GaN crystal with extremely low resistivity by the OVPE method

Principal Investigator

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Review Section

Research Institution

Study of thick GaN crystals with low-dislocation density by the vapor phase epitaxy with an oxide gallium source

Principal Investigator

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Review Section

Research Institution

Investigation of vapor phase epitaxy growth conditions for high quality bulk GaN and their crystal growth processPrincipal Investigator

Principal Investigator

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Research Institution

Computational materials design for hetero-bond manipulation

Principal Investigator

Project Period (FY)

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Review Section

Research Institution

Clarification of crystal growth mechanism for development of large bulk GaN single crystalPrincipal Investigator

Principal Investigator

Project Period (FY)

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Research Field

Research Institution

[Journal Article] Influence of oxygen-related defects on the electronic structure of GaN2022

Author(s)

Journal Title

Data Source

[Journal Article] Computational discovery of stable phases of graphene and h-BN van der Waals heterostructures composed of group III-V binary compounds2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Activation free energies for formation and dissociation of N-N, C-C, and C-H bonds in a Na-Ga melt2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Absolute surface energies of oxygen-adsorbed GaN surfaces2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] First‐Principles Calculation of Bandgaps of Al1- xInxN Alloys and Short‐Period Al1-xInxN/Al1-yInyN Superlattices2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] First-principles study of polar, nonpolar, and semipolar GaN surfaces during oxide vapor phase epitaxy growth2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] First-principles study of the surface phase diagrams of GaN(0001) and (000-1) under the oxide vapor phase epitaxy growth conditions2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Mechanism for enhanced single-crystal GaN growth in the C-assisted Na-flux method2016

Author(s)

Journal Title

DOI

NAID

Kawamura Takahiro 河村貴宏