Nakatsuka Osamu 中塚理

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NAKATSUKA Osamu 中塚理

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Researcher Number	20334998
Other IDs
External Links
Affiliation (Current)	2025: 名古屋大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help	2016 – 2023: 名古屋大学, 工学研究科, 教授 2017: 名古屋大学, 大学院工学研究科, 教授 2015: 名古屋大学, 工学(系)研究科(研究院), 准教授 2010: 名古屋大学, 工学研究科, 准教授 2008 – 2009: 名古屋大学, 工学研究科, 講師 … More 2007 – 2009: 名古屋大学, 大学院・工学研究科, 講師 2007: Nagoya University, 大学院・工学研究科, 助教 2005 – 2006: Nagoya University, Eco Topia Science Institute, Assistant Professor, エコトピア科学研究所, 助手 2004: 名古屋大学, エコトピア科学研究機構, 助手 2001 – 2003: 名古屋大学, 理工科学総合研究センター, 助手 Less
Review Section/Research Field	Principal Investigator Medium-sized Section 29:Applied condensed matter physics and related fields / Basic Section 29020:Thin film/surface and interfacial physical properties-related / Thin film/Surface and interfacial physical properties / Thin film/Surface and interfacial physical properties Except Principal Investigator Thin film/Surface and interfacial physical properties / Science and Engineering / Thin film/Surface and interfacial physical properties / Basic Section 30010:Crystal engineering-related / Crystal engineering / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Engineering / Science and Engineering
Keywords	Principal Investigator 界面 / 薄膜 / ゲルマニウム錫 / コンタクト / ゲルマニウム / 表面・界面 / 物質科学 / エレクトロニクス / 半導体 / 結晶材料 … More / 珪酸塩鉱物 / 低次元物質 / Ⅳ族半導 / 結晶成長 / エネルギーバンド / エピタキシャル成長 / Ⅳ族半導体 / ドーピング / ショットキー障壁 / 集積回路 / 電子・電気材料 / ニッケル / 結晶工学 / プロセス技術 / ULSI / ジャーマナイド … More Except Principal Investigator シリサイド / ゲルマニウム / シリコン / エピタキシャル成長 / シリコンゲルマニウム / 結晶成長 / IV族半導体 / 結晶工学 / 半導体物性 / ニッケル / 格子欠陥 / 走査トンネル顕微鏡 / 第一原理計算 / Silicon / Silicide / 欠陥 / エネルギーバンド / コンタクト / 表面・界面 / ひずみ / 錫 / 表面・界面物性 / チタン / ボロン / 透過電子顕微鏡 / 転位 / 材料系残 / パワーデバイス用半導体 / 計算手法 / 欠陥制御 / パワーデバイス / Ⅳ族半導体 / 集積回路 / ゲルマニウム錫 / 多軌道タイトバインディング法 / IV族元素 / ナノリボン / スピン軌道相互作用 / タイトバインディング近似 / 物質合成 / 物質設計 / エッジ状態 / 理論 / 物質創製 / 二次元物質 / スタネン / ゲルマネン / シリセン / 熱統計力学 / 半導体 / 大口径シリコン結晶 / パワーデバイス用シリコン / 太陽電池 / シリコン単結晶 / 材料物性値 / 原子配置 / 統計熱力学 / Strain structure / Germanium / Electron microscopy / Semiconductor property / Lattice defect / Crystal growth / Crystal engineering / 高分解能X線回析2次元逆格子マッピング / X線回折 / ヘテロエピタキシャル / 歪み / 歪構造 / 電子顕微鏡 / Scanning Tunneling Microscope / Contact / Surface / Interface / Nickel / Carbon / 表面物件 / 界面物件 / 表面物性 / 界面物性 / カーボン / Drain / Source / Germanosilicide / Titanium / Rapid thermal annealing / Silicon germanium / modulated interface / Ultra low resistance contact / 急速加熱化学気相成長法 / 超抵抗コンタクト / ドレイン / ソース / ジャーマノシリサイド / 急速加熱処理 / 界面組成変調層 / 超低抵抗コンタクト / LSI / 高キャリア移動度 / スズ / ゲートスタック / スズ(錫) / CMOS / 歪 / 酸化 / 表面終端 / 半導体工学 / 酸化現象 / 表面・界面物理 / 水素 / 歪ゲルマニウム / ゲートスタック構造 / ポストスケーリング / ナノ材料 / デバイス設計・製造プロセス / 半導体超微細化 / 高角度散乱暗視野走査透過電子顕微鏡 / エピタキシャル / コバルト / カーボン(炭素) / 走査型透過電子顕微鏡 / プラチナ / パラジウム / 界面 / ハイドープ / 低温エピタキシャル成長 / イオンビームスパッタ法 / 水素サーファクタント成長 / 固相エピタキシャル成長 / イオンビームスパッタ / 歪成長 / スパッタ粒子のエネルギーの低減 / スパッタ法のMCシミュレーション / 界面層 / 歪緩和バッファ層 / シリコンゲルマニウムカーボン / Bの高濃度ドープ / 2次元逆格子マッピングX線回折法 / B高濃度ドーピング / 熱電効果 / バッファ層 / 歪緩和 / シリコンゲルマニウムカーボンバッファ層 Less

Energy band design based on controlling ordered/disordered structure of non-thermal equilibrium group-IV alloy thin filmsPrincipal Investigator
- Principal Investigator
  
  Nakatsuka Osamu
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Nagoya University
Creation of exotic low-dimensional material originated from phyllosilicate and control of its electronic propertyPrincipal Investigator
- Principal Investigator
  
  Nakatsuka Osamu
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 29:Applied condensed matter physics and related fields
- Research Institution
  Nagoya University
Development of calculation technique for defect control in semiconductors for power device application
- Principal Investigator
  
  Sueoka Koji
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Okayama Prefectural University
Development of calculation method for physical properties based on the possible atomic configurations and its application to the IV group semiconductor materials
- Principal Investigator
  
  Sueoka Koji
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Okayama Prefectural University
Low Resistance Metal/Germanium Contacts by Alleviation of Fermi Level Pinning PhenomenonPrincipal Investigator
- Principal Investigator
  
  NAKATSUKA Osamu
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Synthesis of New Group IV Two Dimensional Materials
- Principal Investigator
  
  Shiraishi Kenji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Establishment of Fundamental Engineering of Sn-related Group-IV Semiconductor Materials for Multi-Functional and Low-Power Electronics
- Principal Investigator
  
  ZAIMA SHIGEAKI
- Project Period (FY)
  2014 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2010 – 2013
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Nagoya University
シリコン系エンジニアリングサブストレート実現のための材料・物性・構造制御技術
- Principal Investigator
  
  財満鎭明
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Construction of High-k Gate/Strain-engineered Germanium channel Structures with Functional Nano-system
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Creation of tensile-strained Ge high-mobility-channel by thermal nonequilibrium process
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Formation technology of ultra-flat metal/Ge contacts with low resistance for Ge electronicsPrincipal Investigator
- Principal Investigator
  
  NAKATSUKA Osamu
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
Controlling deformation of strained hetero structure of group IV semiconductors for realization of ultra uniform strain fields
- Principal Investigator
  
  SAKAI Akira
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
Control of solid-phase reaction dynamics and carbon engineering for nanofabrication of group-IV
- Principal Investigator
  
  ZAIMA Shigeaki
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Nagoya University
異種材料界面制御による超低抵抗コンタクトの開発と半導体/金属界面の原子直視研究
- Principal Investigator
  
  財満鎭明
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University
Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSI
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
人工IV族半導体極微細構造デバイス製作のための原子精度要素プロセスの開発
- Principal Investigator
  
  YASUDA Yukio
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Nagoya University

[Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果-2013
- Author(s)
  財満鎭明、中塚理、高木信一(全執筆者57名)
- Total Pages
  510
- Publisher
  株式会社エヌ・ティー・エヌ
- Data Source
  KAKENHI-PROJECT-22000011
[Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果-(序論 : 財満、2.3. 3節 : 中塚)2013
- Author(s)
  財満鎭明、中塚理(共著者の一部)
- Total Pages
  510
- Publisher
  株式会社エヌ・ティー・エス
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] In-situ Sb ドーピングによるInP上n型Ge0.75Sn0.25エピタキシャル膜の形成2024
- Author(s)
  柴山茂久，高木孝明，坂下満男，黒澤昌志，中塚理
- Journal Title
  
  第29回電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―予稿集
  
  Volume: 1 Pages: 12-12
- Data Source
  KAKENHI-PROJECT-21H01809
[Journal Article] Ge1-xSnx layers with x~0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70°C and in-situ Sb doping2024
- Author(s)
  Shibayama Shigehisa、Takagi Komei、Sakashita Mitsuo、Kurosawa Masashi、Nakatsuka Osamu
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 176 Pages: 108302-108302
- DOI
  10.1016/j.mssp.2024.108302
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01809
[Journal Article] Self-organized Ge1-xSnx quantum dots formed on insulators and their room temperature photoluminescence2023
- Author(s)
  Hashimoto Kaoru, Shibayama Shigehisa, Asaka Koji, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 7 Pages: 075506-075506
- DOI
  10.35848/1347-4065/ace5f9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01809, KAKENHI-PROJECT-23K23040
[Journal Article] Crystalline and optoelectronic properties of Ge1-xSnx/high-Si-content-SiyGe1-x-ySnx double-quantum wells grown with low-temperature molecular beam epitaxy2023
- Author(s)
  S. Zhang, S. Shibayama, and O. Nakatsuka
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 38 Issue: 1 Pages: 015018-015018
- DOI
  10.1088/1361-6641/aca7d9
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01809
[Journal Article] Lattice-matched growth of high-Sn-content (x~0.1) Si1-xSnx layers on S1-yGey buffers using molecular beam epitaxy2023
- Author(s)
  Fujimoto Kazuaki、Kurosawa Masashi、Shibayama Shigehisa、Sakashita Mitsuo、Nakatsuka Osamu
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 4 Pages: 045501-045501
- DOI
  10.35848/1882-0786/acc3da
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01366, KAKENHI-PROJECT-21H01809
[Journal Article] Photoluminescence properties of heavily Sb doped Ge1－xSnx and heterostructure design favorable for n+-Ge1－xSnx active layer2022
- Author(s)
  S. Zhang, M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, and O. Nakatsuka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 61 Issue: SA Pages: SA1004-SA1004
- DOI
  10.35848/1347-4065/ac25da
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01809
[Journal Article] 極薄GeSiSn/GeSn/GeSiSn二重障壁構造の形成およびその電気的特性2022
- Author(s)
  柴山茂久, G. R. Suwito, 中塚理
- Journal Title
  
  応用物理学会薄膜・表面物理分科会／シリコンテクノロジー分科会共催電子デバイス界面テクノロジー研究会　-材料・プロセス・デバイス特性の物理-　特別研究会研究報告
  
  Volume: 第27回研究会 Pages: 187-190
- Data Source
  KAKENHI-PROJECT-21H01809
[Journal Article] 多層量子ドット構造実現に向けた絶縁体上へのGe1-xSnxナノドットの自己形成2022
- Author(s)
  橋本薫, 柴山茂久, 安坂幸師, 中塚理
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 84 Pages: 5-8
- Data Source
  KAKENHI-PROJECT-21H01809
[Journal Article] Interface structures and electrical properties of micro-fabricated epitaxial Hf-digermanide/n-Ge(001) contacts2022
- Author(s)
  K. Kasahara, K. Senga, M. Sakashita, S. Shibayama, and O. Nakatsuka
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 10 Pages: 744-750
- DOI
  10.1109/jeds.2021.3139728
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H01809
[Journal Article] Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination2019
- Author(s)
  M. Kurosawa, Y. Inaishi, R. Tange, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SA Pages: SAAD02-SAAD02
- DOI
  10.7567/1347-4065/aaeb36
- NAID
  210000135207
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Influence of Sn precursors on Ge1-xSnx growth using metal-organic chemical vapor deposition2019
- Author(s)
  Y. Miki, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 58 Issue: SA Pages: SAAD07-SAAD07
- DOI
  10.7567/1347-4065/aaec1a
- NAID
  210000135228
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process2019
- Author(s)
  K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 12 Issue: 5 Pages: 051016-051016
- DOI
  10.7567/1882-0786/ab1969
- NAID
  210000155747
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-16J10846, KAKENHI-PROJECT-17H04919
[Journal Article] Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties2018
- Author(s)
  O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 印刷中
- NAID
  210000149378
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Journal Article] Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n+-Ge1-xSnx structure2018
- Author(s)
  J. Jeon, A. Suzuki, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Semicond. Sci. Tech.
  
  Volume: 33 Issue: 12 Pages: 124001-124001
- DOI
  10.1088/1361-6641/aae624
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Growth and electrical properties of in situ Sb-doped Ge1-xSnx epitaxial layers for source/drain stressor of strained-Ge transistors2018
- Author(s)
  J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 12 Pages: 121303-121303
- DOI
  10.7567/jjap.57.121303
- NAID
  210000149846
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water2018
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 4S Pages: 04FJ02-04FJ02
- DOI
  10.7567/jjap.57.04fj02
- NAID
  210000148950
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-17H04919, KAKENHI-PROJECT-16J10846
[Journal Article] Epitaxial growth of heavily doped n+-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping2018
- Author(s)
  S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 645 Pages: 57-63
- DOI
  10.1016/j.tsf.2017.10.013
- NAID
  120006473524
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si2018
- Author(s)
  S. Gupta, Y. Shimura, O. Richard, B. Douhard, E. Simoen, H. Bender, O. Nakatsuka, S. Zaima, R. Loo, and M. Heyns
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 113 Issue: 19 Pages: 192103-192103
- DOI
  10.1063/1.5048683
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] A New Application of Ge1-xSnx: Thermoelectric Materials2018
- Author(s)
  M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  ECS Trans. 2018
  
  Volume: 86 Issue: 7 Pages: 321-328
- DOI
  10.1149/08607.0321ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-17H04919
[Journal Article] Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1? x ? y Sn y ternary alloy interlayer on Ge2018
- Author(s)
  Suzuki Akihiro、Nakatsuka Osamu、Sakashita Mitsuo、Zaima Shigeaki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 6 Pages: 060304-060304
- DOI
  10.7567/jjap.57.060304
- NAID
  210000149097
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03565, KAKENHI-PROJECT-26220605
[Journal Article] Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties2018
- Author(s)
  O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 7S2 Pages: 07MA05-07MA05
- DOI
  10.7567/jjap.57.07ma05
- NAID
  210000149378
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Optoelectronic properties of high-Si-content-Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure2018
- Author(s)
  M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Semicond. Sci. Tech.
  
  Volume: 33 Issue: 12 Pages: 124018-124018
- DOI
  10.1088/1361-6641/aaebb5
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water2018
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 112 Issue: 6 Pages: 062104-062104
- DOI
  10.1063/1.4997369
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-17H04919, KAKENHI-PROJECT-16J10846
[Journal Article] Formation and characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers2017
- Author(s)
  M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 156-161
- DOI
  10.1016/j.mssp.2016.10.024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition2017
- Author(s)
  S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Semicond. Sci. Tech.
  
  Volume: 32 Issue: 12 Pages: 124001-124001
- DOI
  10.1088/1361-6641/aa90d2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures2017
- Author(s)
  M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Semicond. Sci. Tech.
  
  Volume: 32 Issue: 10 Pages: 104008-104008
- DOI
  10.1088/1361-6641/aa80ce
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers2017
- Author(s)
  A. Suzukia, O. Nakatsuka, M. Sakashita, and S. Zaima
- Journal Title
  
  Mater. Sci. Semicond. Proc.
  
  Volume: 印刷中 Pages: 162-166
- DOI
  10.1016/j.mssp.2016.12.028
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03565, KAKENHI-PROJECT-26220605
[Journal Article] Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate2017
- Author(s)
  I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 151-155
- DOI
  10.1016/j.mssp.2016.12.038
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] 金属/Ge接合へのSixGe1-x-ySny 界面層導入がショットキー障壁高さに及ぼす効果2017
- Author(s)
  鈴木陽洋, 戸田祥太, 中塚理, 坂下満男, 財満鎭明
- Journal Title
  
  特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回）報告書
  
  Volume: - Pages: 63-66
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03565
[Journal Article] EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz2017
- Author(s)
  Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 70 Pages: 133-138
- DOI
  10.1016/j.mssp.2016.11.013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition2017
- Author(s)
  W. Takeuchi, T. Washizu, S. Ike, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 1S Pages: 01AC05-01AC05
- DOI
  10.7567/jjap.57.01ac05
- NAID
  210000148543
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates2017
- Author(s)
  M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 111 Issue: 19 Pages: 192106-192106
- DOI
  10.1063/1.4995812
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] [招待講演] 低温プロセスに向けたマイクロ波加熱処理によるNiGe/Ge接合の形成2017
- Author(s)
  中塚理, 渡部佳優, 鈴木陽洋, 西義雄, 財満鎭明
- Journal Title
  
  信学技報
  
  Volume: 116 Pages: 11-15
- Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Journal Article] Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition2017
- Author(s)
  T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: - Pages: 614-619
- DOI
  10.1016/j.jcrysgro.2016.10.013
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-14J10705, KAKENHI-PROJECT-26220605
[Journal Article] Growth and Applications of Si1-xSnx Thin Films2017
- Author(s)
  M. Kurosawa, O. Nakatsuka, and S. Zaima
- Journal Title
  
  ECS Trans. 2017
  
  Volume: 80 Issue: 4 Pages: 253-258
- DOI
  10.1149/08004.0253ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures By Using Synchrotron X-Ray Microdiffraction2016
- Author(s)
  S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, and S. Zaima
- Journal Title
  
  ECS Trans. 2016
  
  Volume: 75 Issue: 8 Pages: 769-775
- DOI
  10.1149/07508.0769ecst
- Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10705
[Journal Article] Determination of a 3D Displacement Field at a Vicinity of a GeSn/Ge Interface by the Phase Retrieval of Electron Rocking Curves2016
- Author(s)
  M. Miura, S. Fujinami, K. Saitoh, N. Tanaka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  AMTC Lett.
  
  Volume: 5 Pages: 46-47
- DOI
  10.1002/9783527808465.emc2016.6141
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer2016
- Author(s)
  J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 4S Pages: 04EB13-04EB13
- DOI
  10.7567/jjap.55.04eb13
- NAID
  120005898483
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-15H03565, KAKENHI-PROJECT-14J10698
[Journal Article] 原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性2016
- Author(s)
  兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
  
  Volume: 21 Pages: 5-8
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory2016
- Author(s)
  Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 4S Pages: 04CR10-04CR10
- DOI
  10.7567/jjap.56.04cr10
- NAID
  210000147682
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Effect of GeO2 deposition temperature in atomic layer deposition on electrical properties of Ge gate stack2016
- Author(s)
  M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 8S2 Pages: 08PC05-08PC05
- DOI
  10.7567/jjap.55.08pc05
- NAID
  210000147000
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnx epitaxial layers on Si(110) substrates2016
- Author(s)
  S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 598 Pages: 72-81
- DOI
  10.1016/j.tsf.2015.11.048
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10698
[Journal Article] Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価2016
- Author(s)
  金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 116 Pages: 37-41
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys2016
- Author(s)
  Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 8S2 Pages: 08PE04-08PE04
- DOI
  10.7567/jjap.55.08pe04
- NAID
  120005898481
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Si1-xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析2016
- Author(s)
  長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
- Journal Title
  
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
  
  Volume: 21 Pages: 17-20
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Growth of ultra-high Sn content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height at metal/Ge interface2016
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 4S Pages: 04EB12-04EB12
- DOI
  10.7567/jjap.55.04eb12
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03565
[Journal Article] Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effects on crystalline quality and photoluminescence property2016
- Author(s)
  O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 1S Pages: 01AB05-01AB05
- DOI
  10.7567/jjap.56.01ab05
- NAID
  210000147365
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition2016
- Author(s)
  Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 7-12
- DOI
  10.1016/j.tsf.2015.10.043
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10698, KAKENHI-PROJECT-14J10705
[Journal Article] Characterization of Shallow-and Deep-Level Defects in Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements2016
- Author(s)
  W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 5 Issue: 4 Pages: 3082-3086
- DOI
  10.1149/2.0151604jss
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10698
[Journal Article] Sn系IV族半導体混晶薄膜の成長と物性評価2016
- Author(s)
  志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 116 Pages: 447-459
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] 界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長2016
- Author(s)
  吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Journal Title
  
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会研究報告「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
  
  Volume: 21 Pages: 21-24
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution2016
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 108 Issue: 5 Pages: 052104-052104
- DOI
  10.1063/1.4941236
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Experimental observation of type-I energy band alignment in lattice-matched Ge1-x-ySixSny/Ge heterostructures2016
- Author(s)
  T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 108 Issue: 6 Pages: 061909-061909
- DOI
  10.1063/1.4941991
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-15J10995, KAKENHI-PROJECT-15J11163, KAKENHI-PROJECT-14J10698
[Journal Article] Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects2016
- Author(s)
  S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 4S Pages: 1-5
- DOI
  10.7567/jjap.55.04ej11
- NAID
  210000146374
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10705
[Journal Article] 金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御2015
- Author(s)
  鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  信学技報
  
  Volume: 115 Pages: 57-61
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03565
[Journal Article] 高Sn組成SiSnの形成とバンド構造－直接遷移構造化を目指して－2015
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 115 Pages: 35-37
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Mobility Behavior of Polycrystalline Si1-x-yGexSny Grown on Insulators2015
- Author(s)
 T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
 
 Transactions of the Materials Research Society of Japan
 
 Volume: 40 Issue: 4 Pages: 351-354
- DOI
 10.14723/tmrsj.40.351
- NAID
 130005113361
- ISSN
 1382-3469, 2188-1650
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-15J11163
[Journal Article] Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction2015
- Author(s)
  S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Issue: 18 Pages: 182104-182104
- DOI
  10.1063/1.4921010
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10705
[Journal Article] Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer2015
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 107 Issue: 21
- DOI
  10.1063/1.4936275
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03565, KAKENHI-PROJECT-15J10995
[Journal Article] Epitaxial Ge1-xSnx Layers Grown by Metal-Organic Chemical Vapor Deposition Using Tertiary-butyl-germane and Tri-butyl-vinyl-tin2015
- Author(s)
  Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka and S. Zaima
- Journal Title
  
  ECS Solid State Letters
  
  Volume: 4 Issue: 8 Pages: 59-61
- DOI
  10.1149/2.0041508ssl
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26870261, KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-14J10698, KAKENHI-PROJECT-14J10705
[Journal Article] Growth and applications of GeSn-related group-IV semiconductor materials2015
- Author(s)
  S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, W. Takeuchi and M. Sakashita
- Journal Title
  
  Science and Technology of Advanced Materials
  
  Volume: 16 Issue: 4 Pages: 043502-043502
- DOI
  10.1088/1468-6996/16/4/043502
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers2015
- Author(s)
  M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Issue: 17 Pages: 171908-171908
- DOI
  10.1063/1.4919451
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation2015
- Author(s)
  N. Taoka, T. Asano, T. Yamaha, T. Terashima, O. Nakatsuka, I. Costina, P. Zaumseil, G. Capellini, S. Zaima, and T. Schroeder
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Issue: 6 Pages: 061107-061107
- DOI
  10.1063/1.4908121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J10698, KAKENHI-PROJECT-26220605
[Journal Article] Influence of Interface Structure on Electrical Properties of NiGe/Ge Contacts2015
- Author(s)
  Y. Deng, O. Nakatsuka, M. Sakashita, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 5S Pages: 05EA01-05EA01
- DOI
  10.7567/jjap.54.05ea01
- NAID
  210000145166
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03565
[Journal Article] Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO22015
- Author(s)
  T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Solid State Electronics
  
  Volume: 110 Pages: 54-58
- DOI
  10.1016/j.sse.2015.01.005
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J04434, KAKENHI-PROJECT-26220605
[Journal Article] Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition2015
- Author(s)
  S. Shibayama, T. Yoshida, K. Kimihiko, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 Issue: 6 Pages: 061107-061107
- DOI
  10.1063/1.4908066
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-13J10462, KAKENHI-PROJECT-26220605
[Journal Article] Influence of Interface Structure on Electrical Properties of NiGe/Ge Contacts2015
- Author(s)
  Y. Deng, O. Nakatsuka, M. Sakashita, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54
- NAID
  210000145166
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates2015
- Author(s)
  T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 110 Pages: 49-53
- DOI
  10.1016/j.sse.2015.01.006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits2015
- Author(s)
  S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Journal Title
  
  ECS Trans. 2015
  
  Volume: 69 Issue: 10 Pages: 89-98
- DOI
  10.1149/06910.0089ecst
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605, KAKENHI-PROJECT-15J11163, KAKENHI-PROJECT-14J10698, KAKENHI-PROJECT-14J10705
[Journal Article] High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization2015
- Author(s)
  W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 107 Issue: 2 Pages: 022103-022103
- DOI
  10.1063/1.4926507
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26870261, KAKENHI-PROJECT-26220605
[Journal Article] Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果2015
- Author(s)
  浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 115 Pages: 63-68
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Growth of Si1-x-ySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline properties2015
- Author(s)
  T. Yamaha, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 8S1 Pages: 08KA11-08KA11
- DOI
  10.7567/jjap.54.08ka11
- NAID
  210000145540
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26220605
[Journal Article] Stabilized formation of tetragonal ZrO2 thin film with high permittivity2014
- Author(s)
  K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: VOL. 30 Pages: 192-196
- DOI
  10.1016/j.tsf.2014.01.031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] 固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性2014
- Author(s)
  加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会―材料. プロセス・評価の物理―」(第19回研究報告会)
  
  Pages: 37-40
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] 低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件2014
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」(第19回研究報告会)
  
  Pages: 13-16
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Defects Induced by Reactive Ion Etching in Ge Substrate2014
- Author(s)
  Kusumandari, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
- Journal Title
  
  Advanced Materials Research
  
  Volume: VOL. 896 Pages: 245-248
- DOI
  10.4028/www.scientific.net/amr.896.241
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode2014
- Author(s)
  A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: VOL. 53 Issue: 4S Pages: 04EA06-04EA06
- DOI
  10.7567/jjap.53.04ea06
- NAID
  210000143548
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Large grain growth of Ge-rich Gel-x Snx (x=0.02) on insulating surfaces using pulsed laser annealing in flowing water2014
- Author(s)
  M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: VOL. 104 Issue: 6 Pages: 61901-61901
- DOI
  10.1063/1.4864627
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films2014
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 30 Pages: 276-281
- DOI
  10.1016/j.tsf.2013.10.088
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] MOCVD法により形成した極薄GeO2を用いたAl203/GeOx/Ge構造の電気的特性および構造評価2014
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会rゲートスタック研究会―材料・プロセス・評価の物理―」(第19回研究報告会)
  
  Pages: 131-134
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Impacts of AlGeO formation by post thermal oxidation of Al203/Ge structure on interfacial properties2014
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: VOL. 30 Pages: 282-287
- DOI
  10.1016/j.tsf.2013.10.084
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Development of epitaxial growth technology for Ge_<1-x>Sn_x alloy and study of its properties for Ge nanoelectronics2013
- Author(s)
 O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima
- Journal Title
 
 Solid-State Electron
 
 Volume: 83 Pages: 82-86
- DOI
 10.1016/j.sse.2013.01.040
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-22000011
[Journal Article] Broad defect depth distribution in germanium substrates induced by CF4 plasma2013
- Author(s)
  Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: VOL. 103 Issue: 3 Pages: 33511-33511
- DOI
  10.1063/1.4815925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] "Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer2013
- Author(s)
  M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: VOL. 103 Issue: 10 Pages: 101904-101904
- DOI
  10.1063/1.4820405
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al203/Ge Interface2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  ECS Trans.
  
  Volume: VOL. 58 Issue: 9 Pages: 301-308
- DOI
  10.1149/05809.0301ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成2013
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）
  
  Pages: 39-42
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Effects of Light Exposure during Plasma Process on Electrical Properties of GeO_2/Ge Structures2013
- Author(s)
  Kusumandari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 1S Pages: 01AC04-01AC04
- DOI
  10.7567/jjap.52.01ac04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications : Challenges and Opportunities2013
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima
- Journal Title
  
  ECS Trans
  
  Volume: 58 Issue: 9 Pages: 149-155
- DOI
  10.1149/05809.0149ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Al2O3/Ge構造に対する熱酸化機構の解明2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）
  
  Pages: 39-42
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 103 Issue: 8 Pages: 82114-82114
- DOI
  10.1063/1.4819127
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Interfacial Reaction Mechanisms in Al_2O_3/Ge Structure by Oxygen Radical2013
- Author(s)
  Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 52 Issue: 4S Pages: 04CA08-04CA08
- DOI
  10.7567/jjap.52.04ca08
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Effect of Gate Metal on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure2013
- Author(s)
  Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima
- Journal Title
  
  Solid State Electronics
  
  Volume: 83 Pages: 56-60
- DOI
  10.1016/j.sse.2013.01.029
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響2013
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）
  
  Pages: 39-42
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al_2O_3/Ge Gate Stack Structure2013
- Author(s)
  Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima
- Journal Title
  
  Journal of Physics : Conference Series
  
  Volume: 417 Pages: 012001-012001
- DOI
  10.1088/1742-6596/417/1/012001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates2012
- Author(s)
  Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D.H. Petersen, and S. Zaima
- Journal Title
  
  Thin Solid Films
  
  Volume: 520 Issue: 8 Pages: 3206-3210
- DOI
  10.1016/j.tsf.2011.10.084
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Al2O3/Ge構造への酸素熱処理および酸素ラジカル処理による界面反応機構の解明2012
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  信学技報
  
  Volume: 112 Pages: 27-32
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] ラジカルプロセスによるAl2O3/Ge界面特性の改善2012
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第17回研究会）
  
  Volume: なし Pages: 125-128
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Low temperature formation of Si_<1-x-y>Ge_xSn_y-on-insulator structures by using solid-phase mixing of Ge_<1-z>Sn_z/Si-on-insulator substrates2012
- Author(s)
 O. Nakatsuka, K. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima
- Journal Title
 
 Thin Solid Films
 
 Volume: 520 Issue: 8 Pages: 3288-3292
- DOI
 10.1016/j.tsf.2011.10.120
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-22000011
[Journal Article] Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content2012
- Author(s)
  S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
- Journal Title
  
  ECS Trans.
  
  Volume: 50 Pages: 897-902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] ゲート電極の還元性がGe基板上Pr酸化膜のPr価数に与える影響2012
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Journal Title
  
  信学技報
  
  Volume: 112 Pages: 37-42
- NAID
  110009588302
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Growth of Ge_<1-x>Sn_x heteroepitaxial layers with very high Sn contents on InP(001) substrates2012
- Author(s)
 M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
 
 Thin Solid Films
 
 Volume: 520 Issue: 8 Pages: 3201-3205
- DOI
 10.1016/j.tsf.2011.10.153
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-22000011
[Journal Article] Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation2012
- Author(s)
  Kusumandari, W.Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Issue: 1S Pages: 01AJ01-01AJ01
- DOI
  10.1143/jjap.51.01aj01
- NAID
  210000071710
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Al2O3/Ge に対する酸素熱処理が電気的特性および化学結合状態に与える効果2012
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第17回研究会）
  
  Volume: なし Pages: 129-132
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Control of Strain Relaxation Behavior of Ge_<1-x>Sn_x Layers, Solid-State Electronics2011
- Author(s)
 Y.Shimura, S.Takeuchi, N.Tsutsui, O.Nakatsuka, A.Sakai, S.Zaima
- Journal Title
 
 Solid-State Electronics
 
 Volume: 60 Pages: 84-88
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-22000011
[Journal Article] 電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明2011
- Author(s)
  足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会研究報告ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
  
  Pages: 123-126
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure2011
- Author(s)
  K.Kato, M.Sakashita, W.Takeuchi, H.Kondo, O.Nakatsuka, S.Zaima
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000070253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Formation of Ni(Ge_<1-x>Sn_x) Layers with Solid-Phase Reaction in Ni/Ge_<1-x>Sn_x/Ge Systems2011
- Author(s)
 T.Nishimura, Y.Shimura, S.Takeuchi, B.Vincent, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Journal Title
 
 Solid-State Electronics
 
 Volume: 60 Pages: 46-52
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-22000011
[Journal Article] Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors2011
- Author(s)
  B.Vincent, Y.Shimura, S.Takeuchi, T.Nishimura, G.Eneman, A.Firrincieli, J.Demeulemeester, A.Vantomme, T.Clarysse, O.Nakatsuka, S.Zaima, J.Dekoster, M.Caymax, R.Loo
- Journal Title
  
  Microelectron.Eng.
  
  Volume: 88 Pages: 342-346
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響2011
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会研究報告ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
  
  Pages: 99-102
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(111) and (001) Schottky contacts2011
- Author(s)
  T.Nishimura, O.Nakatsuka, S.Akimoto, W.Takeuchi, S.Zaima
- Journal Title
  
  Microelectron.Eng.
  
  Volume: 88 Pages: 605-609
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems2011
- Author(s)
  T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Issue: 1 Pages: 46-52
- DOI
  10.1016/j.sse.2011.01.025
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy2011
- Author(s)
  M.Adachi, M.Sakashita, H.Kondo, W.Takeuchi, O.Nakatsuka, S.Zaima
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000070244
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors2011
- Author(s)
  B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo
- Journal Title
  
  Microelectron. Eng.
  
  Volume: 88 Issue: 4 Pages: 342-346
- DOI
  10.1016/j.mee.2010.10.025
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] GeSn Technology : Impact of Sn on Ge CMOS Applications2011
- Author(s)
  S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
- Journal Title
  
  ECS Trans
  
  Volume: 41 Issue: 7 Pages: 231-238
- DOI
  10.1149/1.3633303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts2011
- Author(s)
  T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima
- Journal Title
  
  Microelectron. Eng.
  
  Volume: 88 Issue: 5 Pages: 605-609
- DOI
  10.1016/j.mee.2010.08.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Al_2O_3界面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御2011
- Author(s)
  加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会研究報告ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
  
  Pages: 55-58
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy2011
- Author(s)
  M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 4S Pages: 04DA08-04DA08
- DOI
  10.1143/jjap.50.04da08
- NAID
  210000070244
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Control of Strain Relaxation Behavior of Ge1-xSnx Layers2011
- Author(s)
  Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Issue: 1 Pages: 84-88
- DOI
  10.1016/j.sse.2011.01.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr oxide/PrON/Ge Gate Stack Structure2011
- Author(s)
  加藤公彦
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 4S Pages: 04DA17-04DA17
- DOI
  10.1143/jjap.50.04da17
- NAID
  210000070253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer2011
- Author(s)
  C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M. Caymax
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 98 Issue: 19
- DOI
  10.1063/1.3589992
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Pr酸化膜/Si構造へのAl導入による界面反応抑制効果2011
- Author(s)
  古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明
- Journal Title
  
  特別研究会研究報告ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
  
  Pages: 51-54
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Ge1-xSnx stressors for strained-Ge CMOS2011
- Author(s)
  S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Issue: 1 Pages: 53-57
- DOI
  10.1016/j.sse.2011.01.022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Ge_<1-x>Sn_x stressors for strained-Ge CMOS2011
- Author(s)
 S.Takeuchi, Y.Shimura, T.Nishimura, B.Vincent, G.Eneman, T.Clarysse, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Journal Title
 
 Solid-State Electronics
 
 Volume: 60 Pages: 53-57
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-22000011
[Journal Article] Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique2011
- Author(s)
  加藤公彦
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 10S Pages: 10PE02-10PE02
- DOI
  10.1143/jjap.50.10pe02
- NAID
  210000071422
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J06058, KAKENHI-PROJECT-22000011
[Journal Article] Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen2011
- Author(s)
  K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima
- Journal Title
  
  Solid-State Electronics
  
  Volume: 60 Issue: 1 Pages: 70-74
- DOI
  10.1016/j.sse.2011.01.029
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22000011
[Journal Article] Formation of Palladium Silicide on Heavily Doped Si (001) Substrates Using Ti Intermediate Laver2010
- Author(s)
  R.Suryana, O.Nakatsuka, S.Zaima
- Journal Title
  
  Jpn.J.Appl.Phys. (掲載決定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246009
[Journal Article] Low temperature growth of Ge_<1-x>Sn_x buffer layers for tensile-strained Ge layers2010
- Author(s)
 Y.Shimura, N.Tsutsui, O.Nakatsuka, A.Sakai, S.Zaima
- Journal Title
 
 Thin Solid Films 518
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Low temperature growth of Ge_<1-x>Sn_x buffer layers for tensile-strained Ge layers2010
- Author(s)
 Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Journal Title
 
 Thin Solid Films 518(6)
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing2010
- Author(s)
  T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata
- Journal Title
  
  Thin Solid Films 518(6)
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge_<1-x>Sn_x Buffer Layers for Tensile-Strained Ge Layers2009
- Author(s)
 Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Journal Title
 
 Jpn. J. Appl. Phys. 48
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si_<1-x>Ge_x Structures on Si(001) Substrates2009
- Author(s)
 T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, S. Zaima
- Journal Title
 
 Solid-State Electronics 53(11)
 
 Pages: 1198-1201
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Microstructures in directly bonded Sisubstrates2009
- Author(s)
  Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori
- Journal Title
  
  Solid-State Electronics 53
  
  Pages: 837-840
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System2008
- Author(s)
  O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47(4)
  
  Pages: 2402-2406
- NAID
  10022551560
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications2008
- Author(s)
  S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 80-83
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2008
- Author(s)
 M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
 
 Appl. Surf. Sci 254(19)
 
 Pages: 6048-60651
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18206005
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2008
- Author(s)
 S.Takeuchi, A.Sakai, O.Nakatsuka, M.Ogawa, and S.Zaima
- Journal Title
 
 Thin Solid Films 517(1)
 
 Pages: 159-162
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System2008
- Author(s)
  O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
  
  Jpn. J. Appl. Phys. 47
  
  Pages: 2402-2406
- NAID
  10022551560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
 S.Takeuchi, Y.Shimura, O.Nakatsuka, S.Zaima, M.Ogawa, and A.Sakai
- Journal Title
 
 Appl.Phys.Lett. 92
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Silicide and germanide technology for contacts and gates in MOSFET applications2008
- Author(s)
  S.Zaima, O.Nakatsuka, H.Kondo, M.Sakashita, A.Sakai, M.Ogawa
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 80-83
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Characterization of bonding structures of directly bonded hybrid crystal orientation substrates2008
- Author(s)
  E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, S. Zaima
- Journal Title
  
  Thin Solid Films 517(1)
  
  Pages: 323-326
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2008
- Author(s)
 S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Journal Title
 
 Thin Solid Films 517(1)
 
 Pages: 159-162
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Tensile strained Ge layers on strain-relaxed Ge_<1-x> Sn_x/virtual Ge substrates2008
- Author(s)
 S.Takeuchi, A.Sakai, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
 
 Thin Solid Films 517
 
 Pages: 159-162
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Growth of highly strain-relaxed Ge_<1-x>Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
 S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, A. Sakai
- Journal Title
 
 Appl. Phys. Lett. 92
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge (001) Substrates2008
- Author(s)
 M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Journal Title
 
 Appl. Surf. Sci. (印刷中)
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18206005
[Journal Article] Growth of highly strain-relaxed Ge_<1-x> Sn_x/virtual Ge by a Sn precipitation controlled compositionally step-graded method2008
- Author(s)
 S.Takeuchi, Y.Shimura, O.Nakatsuka, S.Zaima, M.Ogawa, A.Sakai
- Journal Title
 
 Appl.Phys.Lett. 92
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価2007
- Author(s)
  鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明
- Journal Title
  
  特別研究会研究報告"ゲートスタック研究会 -材料・プロセス・評価の物理-"(第12回研究会)
  
  Pages: 251-256
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Growth and structure evaluation of strain-relaxed Ge_<1-x>Sn_x buffer layers grown on various types of substrates2007
- Author(s)
 S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, S. Zaima
- Journal Title
 
 Semicond. Sci. Technol. 22(1)
- Data Source
 KAKENHI-PROJECT-18063012
[Journal Article] Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Journal Title
  
  特別研究会研究報告"ゲートスタック研究会-材料・プロセス・評価の物理-"(第12回研究会)
  
  Pages: 197-202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge (001) Substrates2007
- Author(s)
  O.Nakatsuka, A.Suzuki, A.Sakai, M.Ogawa, S.Zaima
- Journal Title
  
  The 7th International Workshop on Junction Technology (掲載決定済)
- Data Source
  KAKENHI-PROJECT-18686005
[Journal Article] Growth and structure evaluation of strain-relaxed Ge_1-xSn_x buffer layers grown on various types of substrates2007
- Author(s)
  S.Takeuchi, A.Sakai, K.Yamamoto, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
  
  Semiconductor Science and Technology 22 (1)
- Data Source
  KAKENHI-PROJECT-18063012
[Journal Article] Ge(001)基板上NiGe薄膜のPt添加による熱的安定性向上2007
- Author(s)
  鈴木敦之, 中塚理, 酒井朗, 小川正毅, 財満鎭明
- Journal Title
  
  第54回応用物理学関係連合講演会講演予稿集第2分冊
  
  Pages: 902-902
- Data Source
  KAKENHI-PROJECT-18686005
[Journal Article] Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces2007
- Author(s)
  A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, and M. Ogawa
- Journal Title
  
  ECS Trans 3(7)
  
  Pages: 1197-1203
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206005
[Journal Article] Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction2006
- Author(s)
  S.Mochizuki, A.Sakai, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
- Journal Title
  
  Thin Solid Films 508 (1-2)
  
  Pages: 128-131
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates2006
- Author(s)
  N.Taoka, A.Sakai, S.Mochizuki, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
  
  Thin Solid Films 508 (1-2)
  
  Pages: 147-151
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
- Journal Title
  
  Microelectronic Engineering 82 (3-4)
  
  Pages: 479-484
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations2005
- Author(s)
  N.Taoka, A.Sakai, T.Egawa, O.Nakatsuka, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science in Semiconductor Processing 8 (1-3)
  
  Pages: 131-135
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations2005
- Author(s)
  N.Taoka, A.Sakai, T.Egawa, O.Nakatsuka, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science in Semiconductor Processing 8(1-3)
  
  Pages: 131-135
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2005
- Author(s)
  S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science in Semiconductor Processing 8
  
  Pages: 5-9
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems2005
- Author(s)
  A.Sakai, N.Taoka, O.Nakatsuka, S.Zaima, Y.Yasuda
- Journal Title
  
  Applied Physics Letters 86
- NAID
  120000979691
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2005
- Author(s)
  S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science in Semiconductor Processing 8 (1-3)
  
  Pages: 5-9
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
- Journal Title
  
  Proceedings of Advanced Metallization Conference 2004 (AMC2004)
  
  Pages: 293-298
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Control of strain and dislocation structures of Si_<1-x>,Ge_x buffer layers2005
- Author(s)
 N.Taoka, A.Sakai, S.Mochizuki, O.Nakatsuka, M.Ogawa, S.Zaima
- Journal Title
 
 Journal of the Japanese Association of Crystal Growth 32
 
 Pages: 89-98
- Description
 「研究成果報告書概要(欧文)」より
- Data Source
 KAKENHI-PROJECT-16360005
[Journal Article] Si_<1-x>Ge_xバッファ層の歪緩和および転位構造制御2005
- Author(s)
 田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明
- Journal Title
 
 日本結晶成長学会誌 32
 
 Pages: 89-98
- Description
 「研究成果報告書概要(和文)」より
- Data Source
 KAKENHI-PROJECT-16360005
[Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
- Journal Title
  
  Proceedings of Advanced Metallization Conference 2004 (AMC2004) 293
  
  Pages: 293-298
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
- Journal Title
  
  Microelectronic Engineering 82
  
  Pages: 479-484
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Dislocation and strain engineering for SiGe buffer layers on Si2005
- Author(s)
  A.Sakai, S.Mochizuki, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
- Journal Title
  
  Crystalline Defects and Contamination : Their Impact and Control in Device Manufacturing IV, DECON 2005, Proceedings of the Satellite Symposium to 35th European Solid-State Device Research Conference 2005 2005-10
  
  Pages: 16-29
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Improvement in NiSi/Si contact properties with C-implantation2005
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, Y.Yasuda, S.Zaima
- Journal Title
  
  Microelectronic Engineering 82(3-4)
  
  Pages: 479-484
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004
- Author(s)
  E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Applied Surface Science 237 (1-4)
  
  Pages: 150-155
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] SiおよびSi_<1-x-y>Ge_xC_y上のNiシリサイド形成2004
- Author(s)
 中塚理, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
 
 電気学会研究会資料(電子材料研究会) EFM-04
 
 Pages: 25-30
- Description
 「研究成果報告書概要(和文)」より
- Data Source
 KAKENHI-PROJECT-15206004
[Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004
- Author(s)
  E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Applied Surface Science 237(1-4)
  
  Pages: 150-155
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Influence of C incorporation on the initial growth of epitaxial NiSi_2 on Si(100)2004
- Author(s)
  E.Okada, O.Nakatsuka, S.Oida, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Applied Surface Science 237
  
  Pages: 150-155
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Si及びSi_<1-x-y>Ge_xC_y上のNiシリサイド形成2004
- Author(s)
 中塚理, 酒井朗, 財満鎭明, 安田幸夫
- Journal Title
 
 電気学会研究会資料(電子材料研究会) EFM-04
 
 Pages: 25-30
- Data Source
 KAKENHI-PROJECT-15206004
[Journal Article] Silicide Formation on Si and Si_<1-x-y>Ge_xC_y2004
- Author(s)
 O.Nakatsuka, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
 
 Reports of DENKI GAKKAI KENKYUUKAI (DENSHI ZAIRYOU KENKYUUKAI) EFM-04
 
 Pages: 25-30
- Description
 「研究成果報告書概要(欧文)」より
- Data Source
 KAKENHI-PROJECT-15206004
[Journal Article] Initial growth behaviors of SiGeC in SiGe and C alternate deposition2004
- Author(s)
  S.Takeuchi, O.Nakatsuka, Y.Wakazono, A.Sakai, S.Zaima, Y.Yasuda
- Journal Title
  
  Materials Science and Semiconductor Processing 8(1-3)
  
  Pages: 5-9
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Control of Ni/Si interfacial reaction and NiSi technology for ULSI applications
- Author(s)
  S.Zaima, O.Nakatsuka, A.Sakai, Y.Yasuda
- Journal Title
  
  Proceedings of IUMRS International Conference in Asia 2004 (印刷中)
- Data Source
  KAKENHI-PROJECT-15206004
[Journal Article] Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction
- Author(s)
  A.Sakai, S.Mochizuki, N.Taoka, O.Nakatsuka, S.Takeda, S.Kimura, M.Ogawa, S.Zaima
- Journal Title
  
  Thin Solid Films (印刷中)
- Data Source
  KAKENHI-PROJECT-16360005
[Journal Article] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si
- Author(s)
  O.Nakatsuka, K.Okubo, A.Sakai, M.Ogawa, S.Zaima, J.Murota, Y.Yasuda
- Journal Title
  
  Proceedings of Advanced Metallization Conference 2004 (AMC2004) (印刷中)
- Data Source
  KAKENHI-PROJECT-15206004
[Patent] 電子素子およびその製造方法2016
- Inventor(s)
  中塚理, 鈴木陽洋, 戸田祥大, 坂下満男, 財満鎭明
- Industrial Property Rights Holder
  中塚理, 鈴木陽洋, 戸田祥大, 坂下満男, 財満鎭明
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-162977
- Filing Date
  2016-08-23
- Data Source
  KAKENHI-PROJECT-26220605
[Patent] 電子素子およびその製造方法2016
- Inventor(s)
  中塚理、鈴木陽洋、戸田祥太、坂下満男、財満鎭明
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2016-162977
- Filing Date
  2016-08-23
- Data Source
  KAKENHI-PROJECT-15H03565
[Patent] MOSキャパシタ及びMOSFET2015
- Inventor(s)
  坂下、財満、中塚、竹内、柴山、田岡、加藤、吉田
- Industrial Property Rights Holder
  坂下、財満、中塚、竹内、柴山、田岡、加藤、吉田
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2015-022059
- Filing Date
  2015-04-06
- Data Source
  KAKENHI-PROJECT-26220605
[Patent] 半導体決勝の製造方法、半導体結晶及び半導体デバイス2014
- Inventor(s)
  黒澤昌志、中塚理、田岡紀之、坂下満男、財満鎭明
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Industrial Property Rights Type
  特許
- Filing Date
  2014-02-20
- Data Source
  KAKENHI-PROJECT-22000011
[Patent] 半導体結晶、その製造方法、及び多層膜構造体2013
- Inventor(s)
  黒澤昌志、田岡紀之、坂下満男、中塚理、財満鎭明
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-024605
- Filing Date
  2013-02-12
- Data Source
  KAKENHI-PROJECT-22000011
[Patent] 多層膜構造体及びその形成方法2012
- Inventor(s)
  中塚理、財満鎭明、望月健太、志村洋介
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Industrial Property Rights Type
  特許
- Filing Date
  2012-12-10
- Data Source
  KAKENHI-PROJECT-22000011
[Patent] 多層膜構造体及びその形成方法2011
- Inventor(s)
  中塚理、財満鎭明、望月健太、志村洋介
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2011-05-23
- Data Source
  KAKENHI-PROJECT-22000011
[Patent] 多層膜構造体の形成方法2008
- Inventor(s)
  中塚理、酒井朗、小川正毅, (他4名)
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2008-122891
- Filing Date
  2008
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 多層膜構造体の形成方法2007
- Inventor(s)
  中塚理、酒井朗、小川正毅、財満鎭明、近藤博基、湯川勝規、水谷卓也
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体2007
- Inventor(s)
  竹内正太郎, 酒井朗, 中塚理、ほか2名
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2007-132189
- Filing Date
  2007-05-23
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] ジャーマナイド薄膜、ジャーマナイド薄膜の作成方法、ジャーマナイド薄膜を備えたゲルマニウム構造体2007
- Inventor(s)
  中塚理、酒井朗、鈴木敦之、小川正毅、財満鎭明
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Industrial Property Number
  2007-247138
- Filing Date
  2007-09-25
- Data Source
  KAKENHI-PROJECT-18686005
[Patent] ジャーマナイド薄膜、ジャーマナイド薄膜の作成方法、ジャーマナイド薄膜を備えたゲルマニウム構造体2007
- Inventor(s)
  中塚理、酒井朗、鈴木敦之、小川正毅、財満鎭明
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Industrial Property Number
  2007-247138
- Acquisition Date
  2007-09-25
- Overseas
- Data Source
  KAKENHI-PROJECT-18686005
[Patent] 伸張歪ゲルマニウム薄膜の作製方法、伸張歪ゲルマニウム薄膜、及び多層膜構造体2007
- Inventor(s)
  竹内正太郎, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Industrial Property Rights Holder
  国立大学法人名古屋大学
- Filing Date
  2007-05-17
- Data Source
  KAKENHI-PROJECT-18063012
[Patent] 歪緩和ゲルマニウム膜及びその製造方法並びに多層膜構造体2005
- Inventor(s)
  酒井朗, 湯川勝規, 中塚理, 小川正毅, 財満鎭明
- Industrial Property Rights Holder
  名古屋大学
- Industrial Property Number
  2005-355102
- Filing Date
  2005-12-08
- Data Source
  KAKENHI-PROJECT-16360005
[Presentation] Al/GeSn(111)構造上への熱処理による極薄・高Sn組成GeSn表面偏析2024
- Author(s)
  柴山茂久, 松本泰河, 大田晃生, 横川凌, 坂下満男, 黒澤昌志, 中塚理
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第29回）
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] In-situ Sbドーピングによるn型Ge0.75Sn0.25エピタキシャル層の形成2024
- Author(s)
  柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] In-situ SbドーピングによるInP上n型Ge0.75Sn0.25エピタキシャル膜の形成2024
- Author(s)
  柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第29回）
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Al/GeSn(111)構造からの偏析を用いた極薄・高 Sn 組成 GeSn の形成2023
- Author(s)
  松本泰河, 大田晃生, 横川凌, , 坂下満男, 黒澤昌志, 中塚理, 柴山茂久
- Organizer
  第10回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Al/GeSn(111)エピタキシャル層構造からの偏析による極薄GeSn形成2023
- Author(s)
  松本泰河, 柴山茂久, 大田晃夫, 横川凌,, 黒澤昌志, 坂下満男, 中塚理
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] スパッタリング法によるInP基板上のGe0.75Sn0.25エピタキシャル成長2023
- Author(s)
  壁谷汰知, 柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Heteroepitaxial Growth of High Substitutional Sn-content Ge1-xSnx Layer Lattice-matched on InP Substrate2023
- Author(s)
  O. Nakatsuka, K. Takagi, S. Shibayama, M. Kurosawa, and M. Sakashita
- Organizer
  International Conference on Silicon Epitaxy and Heterostructures International SiGe Technology and Device Meeting (ICSI-ISTDM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers2023
- Author(s)
  T. Mori, S. Shibayama, K. Nishizawa, M. Sakashita, M. Kurosawa, and O. Nakatsuka
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K18893
[Presentation] 高Sn組成Ge1-xSnx(111)エピタキシャル薄膜の高品質形成2023
- Author(s)
  森俊輔, 柴山茂久, 加藤芳規, 坂下満男, 黒澤昌志, 中塚理
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Optoelectronic properties of Ge1-xSnx/high-Si-content SiyGe1-y-zSnz double quantum wells formed by low-temperature MBE growth and post deposition annealing2023
- Author(s)
  S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Seed-layer driven solid phase epitaxy of amorphous Ge1-xSnx layers on Si(001) substrates toward in-plane strain control2023
- Author(s)
  T. Hiraide, M. Kurosawa, S. Shibayama, M. Sakashita, and O. Nakatsuka
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Challenge and new opportunity of Ge1-x-ySixSny/Ge1-xSnx heterostructures for optoelectronic and electronic device applications2023
- Author(s)
  S. Shibayama, S. Zhang, M. Sakashita, M. Kurosawa, and O. Nakatsuka
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] 固相成長法による Si(001)基板上の伸長歪み Ge1-xSnx薄膜の形成2023
- Author(s)
  平出達磨, 大岩樹, 柴山茂久, 坂下満男, 中塚理, 黒澤昌志
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] スパッタリング法による InP 基板上へのエピタキシャル Ge0.75Sn0.25 形成2023
- Author(s)
  壁谷汰知, 柴山茂久, 高木孝明, 坂下満男, 黒澤昌志, 中塚理
- Organizer
  第10回応用物理学会名古屋大学スチューデントチャプター東海地区学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Epitaxy and heterostructure of germanium tin-related group-IV alloy semiconductors for future electronic and optoelectronic applications2023
- Author(s)
  O. Nakatsuka, M. Kurosawa, S. Shibayama, and M. Sakashita
- Organizer
  2023 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Heteroepitaxy of Ge1-xSnx with a high Sn content over 25% on InP(001) toward group-IV infrared detector2023
- Author(s)
  K. Takagi, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
- Organizer
  13th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Formation of Ge1-xSnx/SixGe1-x-ySny double quantum wells structure and its photoluminescence mechanism2022
- Author(s)
  S. Zhang, S. Shibayama, and O. Nakatsuka
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Sn-driven self-formation of Ge1-xSnx nanodots on insulator for multi-layered quantum dots structure2022
- Author(s)
  K. Hashimoto, S. Shibayama, K. Asaka, M. Kurosawa, and O. Nakatsuka
- Organizer
  The 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] InP基板上の超高Sn組成Ge1-xSnxヘテロエピタキシャル層の結晶性改善2022
- Author(s)
  高木孝明, 柴山茂久, 黒澤昌志, 坂下満男, 中塚理
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] 熱安定性の高いGe1-xSnx量子ドットの自己形成2022
- Author(s)
  橋本薫, 柴山茂久, 安坂幸師, 黒澤昌志, 坂下満男, 中塚理
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Si(111)上における直接遷移Ge1-xSnxヘテロエピタキシャル層の形成2022
- Author(s)
  森俊輔, 柴山茂久, 坂下満男, 黒澤昌志, 中塚理
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] 多層量子ドット構造実現に向けた絶縁体上へのGe1-xSnxナノドットの自己形成2022
- Author(s)
  橋本薫, 柴山茂久, 安坂幸師, 中塚理
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会（SDM）「MOSデバイス・メモリ・パワーデバイス高性能化－材料・プロセス技術」
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] 量子ドット実現に向けた超高Sn組成GeSnの自己組織化形成2022
- Author(s)
  橋本薫, 柴山茂久, 安坂幸師, 中塚理
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Research and Development of GeSn-related Group-IV Semiconductor Heterostructures for Optoelectronic Applications2022
- Author(s)
  O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
- Organizer
  Symposium on Light Emission and Photonics of Group IV Semiconductor Nanostructures (LPGN)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Substrate engineering for strain-controlled high-Sn-content Ge1-xSnx epitaxy2022
- Author(s)
  O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita
- Organizer
  The 6th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2022 (APAC-Silicide 2022)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] 極薄GeSiSn/GeSn/GeSiSn二重障壁構造の形成およびその電気的特性2022
- Author(s)
  柴山茂久, G. R. Suwito, 中塚理
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第27回）
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Formation of non-equilibrium Ge1-xSnx/SixGe1-x-ySny double-quantum wells and its photoluminescence property2022
- Author(s)
  S. Zhang, S. Shibayama, and O. Nakatsuka
- Organizer
  14th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials (ISPlasma 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Molecular beam epitaxy of Si1-xSnx layers with 10%-Sn content on Si1-yGey buffers2022
- Author(s)
  K. Fujimoto, S. Shibayama, M. Sakashita, M. Kurosawa, and O. Nakatsuka
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Si1-xGexバッファ上におけるSi1-xSnx薄膜の結晶成長2022
- Author(s)
  藤本一彰, 黒澤昌志, 中塚理
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] 固相エピタキシャル成長法によるPドープSi1-xSnx薄膜の形成2022
- Author(s)
  大岩樹, 黒澤昌志, 中塚理
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] GaAs基板上におけるSi1－xSnx薄膜の結晶成長2021
- Author(s)
  藤本一彰, 黒澤昌志, 中塚理
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Optoelectronic properties of heterostructures based on pseudo-direct-bandgap transition n+-Ge1-xSnx active layer2021
- Author(s)
  S. Zhang, and O. Nakatsuka
- Organizer
  The 2nd International Workshop on Advanced Nanomaterials for Future Electron Devices 2021 (IWAN2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] Optoelectronic properties of pseudo-direct transition n+-Ge1-xSnx and heterostructures composed of n+-Ge1-xSnx and n-SiyGe1-y thin layers2021
- Author(s)
  S. Zhang, M. Sakashita, S. Shibayama, and O. Nakatsuka
- Organizer
  International Conference on Materials and Systems for Sustainability 2021 (ICMaSS 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01809
[Presentation] HfO2-ZrO2系薄膜における反強誘電性の発現過程について2019
- Author(s)
  柴山茂久, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 高Si組成Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造のエネルギーバンド構造および光電特性評価2019
- Author(s)
  福田雅大, 坂下満男, 柴山茂久, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第24回）
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] エピタキシャルHfGe2/Ge(001)界面の形成によるショットキー障壁高さ制御2019
- Author(s)
  千賀一輝, 中塚理, 坂下満男, 柴山茂久, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第24回）
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of Strain-relaxed Ge1-x-ySixSny Epitaxial Layer using Ionimplanted Ge Substrate2019
- Author(s)
  H. Sofue, M. Fukuda, S. Shibayama, O. Nakatsuka, and S. Zaima
- Organizer
  11th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials/12th International Conference on Plasma-Nano Technology and Science (ISPlasma2019/IC-PLANTS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GaSb(001)基板上に形成したSi1-xSnx薄膜の結晶構造評価2019
- Author(s)
  丹下龍志, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第24回）
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Raman分光法を用いたイオン注入Ge基板表面の結晶損傷評価2019
- Author(s)
  祖父江秀隆, 福田雅大, 柴山茂久, 中塚理, 財満鎭明
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 熱電特性評価に向けた組成傾斜SixGe1-x細線の形成2018
- Author(s)
  中田壮哉, 高橋恒太, 西嶋泰樹, 清水智, 角田功, 中塚理, 財満鎭明, 渡邉孝信, 黒澤昌志
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge1-xSnxゲートスタック構造における欠陥の電気的評価2018
- Author(s)
  金田裕一, 池進一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第23回）
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Thermoelectric Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Layer Prepared with Ion Implantation2018
- Author(s)
  Y. Peng, M. Kurosawa, O. Nakatsuka, L. Miao, J. Gao, and S. Zaima
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Impact of Crystalline Property of SixGe1-x-ySny Ternary Alloy Interlayer on Schottky Barrier Height Engineering of Metal/Ge Contact2018
- Author(s)
  O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima
- Organizer
  Advanced Metallization Conference 2018: 28th Asian Session (ADMETA Plus 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] SixGe1-x-ySny三元混晶界面層の結晶物性が金属/Ge界面Schottky障壁高さに及ぼす影響2018
- Author(s)
  中塚理, 鈴木陽洋, 坂下満男, 財満鎭明
- Organizer
  Advanced Metallization Conference: Satellite Workshop (ADMETA Satellite Workshop)
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Heavily p-type Doping to Si1-xSnx Layers Grown on SOI Substrates2018
- Author(s)
  Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials/11th International Conference on Plasma-Nano Technology and Science (ISPlasma2018/IC-PLANTS2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure2018
- Author(s)
  M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Thin Film Growth and Characterization of Group-IV Alloy Semiconductors for Future Nanoelectronic Applications2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, and S. Zaima
- Organizer
  The 9th International Conference on Physics and Its Applications (ICOPIA)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 高Si組成歪緩和Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の形成および光電特性評価2018
- Author(s)
  福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 多結晶Ge1-xSnx薄膜熱電素子の低温形成2018
- Author(s)
  髙橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第2回フォノンエンジニアリング研究グループ研究会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator2018
- Author(s)
  K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa
- Organizer
  The 2nd Electron Devices Technology and Manufacturing (EDTM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GaSb基板上におけるSi1-xSnx薄膜の結晶成長2018
- Author(s)
  丹下龍志, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure with Ultra-Low Contact Resistivity2018
- Author(s)
  J. Jeon, A. Suzuki, S. Shibayama, O. Nakatsuka, and S. Zaima
- Organizer
  12th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 単結晶p型Ge0.95Sn0.05薄膜の熱電特性におけるドメインサイズの効果2018
- Author(s)
  今井志明, 高橋恒太, 内田紀行, 前田辰郎, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第2回フォノンエンジニアリング研究グループ研究会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn-based thin film thermoelectric generators2018
- Author(s)
  M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications2018
- Author(s)
  O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima
- Organizer
  12th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Study of factors to limit increasing Sn content in Ge1-xSnx for MOCVD method2018
- Author(s)
  Y. Miki, W. Takeuchi, S. Shibayama, O. Nakatsuka, and S. Zaima
- Organizer
  12th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of Ultra-Low Resistance Contact with Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure2018
- Author(s)
  J. Jihee, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
- Organizer
  1st Joint Conference ICSI / ISTDM 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] MOCVD法によるGe1-xSnx薄膜成長におけるSn析出過程2018
- Author(s)
  三鬼悠輔, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] SiO2上に形成したGe1-xSnx多結晶薄膜の熱電特性評価2018
- Author(s)
  今井志明, 高橋恒太, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Cイオン注入に伴いGe中に形成される結晶欠陥の電気的特性2018
- Author(s)
  中島啓佑, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第23回）
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  European Materials Research Society (2018 E-MRS Spring Meeting)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima
- Organizer
  IEEE Photonics Society Summer Topical Meeting Series 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Electrical Conduction Property at Metal/Heavily Sb-doped n-Ge1-xSnx Contact2018
- Author(s)
  J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers2018
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  11th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Electrical Conduction Property at Metal/Heavily Sb-doped n-Ge1-xSnx Contact2018
- Author(s)
  J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, S. Zaima
- Organizer
  第65回応用物理学会春季学術講演
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] 溶融成長法によるGe1-xSnx細線の形成と電気特性評価2018
- Author(s)
  高橋恒太, 今井祐太, 西嶋泰樹, 清水智, 黒澤昌志, 角田功, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer2018
- Author(s)
  M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima
- Organizer
  1st Joint Conference ICSI / ISTDM 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of laterally graded SixGe1-x stripes for thermoelectric generator2018
- Author(s)
  M. Nakata, K. Takahashi, T. Nishijima, S. Shimizu, I. Tsunoda, O. Nakatsuka, S. Zaima, T. Watanabe, and M. Kurosawa
- Organizer
  The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] イオン注入基板によるGe1-x-ySixSnyエピタキシャル層の歪緩和促進2018
- Author(s)
  祖父江秀隆, 福田雅大, 中塚理, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Composition and Strain Engineering of New Group-IV Thermoelectric Materials2018
- Author(s)
  M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  AiMES 2018 Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] エピタキシャルHfGe2/Ge接合の形成と結晶構造および電気伝導特性2018
- Author(s)
  千賀一輝, 中塚理, 鈴木陽洋, 坂下満男, 財満鎭明
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] ドーパント種が水中パルスレーザアニールによるGe1-xSnx薄膜への高濃度ドーピングに及ぼす効果2018
- Author(s)
  髙橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Growth of Ge1-xSnx Layer by Metal-organic Chemical Vapor Deposition Method using Tetrakis Dimethylamino Tin2018
- Author(s)
  Y. Miki, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials/11th International Conference on Plasma-Nano Technology and Science (ISPlasma2018/IC-PLANTS2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ構造の光電特性評価2018
- Author(s)
  福田雅大, Rainko Denis, 坂下満男, 黒澤昌志, Buca Dan, 中塚理, 財満鎭明
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Thermal Stability Study of in-situ Sb-Doped n-Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors2017
- Author(s)
  J. Jeon, A. Suzuki, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Selective Growth of Ge1-xSnx Epitaxial Layer on Patterned Si Substrate using Metal-organic Chemical Vapor Deposition Method2017
- Author(s)
  T. Washizu, S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science
- Place of Presentation
  Kasugai, Japan
- Year and Date
  2017-03-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 有機金属化学気相成長法を用いたGe1-xSnx成長におけるSn原料の検討2017
- Author(s)
  三鬼悠輔, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystalline and electrical properties of epitaxial HfGe2/Ge contact for lowering Schottky barrier height2017
- Author(s)
  O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima
- Organizer
  Advanced Metallization Conference 2017: 27th Asian Session (ADMETA2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] 高濃度SbドーピングGe1-xSnxエピタキシャル層の熱的安定性2017
- Author(s)
  J. Jeon, 鈴木陽洋, 髙橋恒太, 中塚理, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 新しいIV族多元混晶薄膜の結晶成長とデバイス応用2017
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  2017年真空・表面科学合同講演会(公益社団法人日本表面科学会第37回表面科学学術講演会ならびに一般社団法人日本真空学会第58回真空に関する連合講演会)
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 混晶組成および歪制御によるGe1-xSnx/Ge1-x-ySixSnyヘテロ構造のエネルギーバンド構造制御2017
- Author(s)
  福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Geバッファ層導入によるSi(001)基板上への歪緩和Ge1-x-ySixSny層の形成2017
- Author(s)
  渡邉千皓, 福田雅大, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of GeSn and related semiconductor thin films for next generation optoelectronic applications2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  2017 Global Conference on Polymer and Composite Materials (PCM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Developments of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic applications2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  Frontiers in Materials Processing Applications, Research and Technology (FiMPart)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Epitaxial growth of n+-Ge1-xSnxlayerswith in situ phosphorus doping using low-temperature metal-organic chemical vapor deposition method2017
- Author(s)
  S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn and related group-IV alloy thin films for future Si nanoelectronics2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  The Tenth International Conference on High-Performance Ceramics (CICC-10)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] 金属/SixGe1-x-ySny/Ge接合の電気伝導特性に対する電極材料の影響2017
- Author(s)
  鈴木陽洋, 中塚理 , 坂下満男, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Characterization of Defects in Ge1-xSnx Gate Stack Structure2017
- Author(s)
  Y. Kaneda, S. Ike, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water2017
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors2017
- Author(s)
  J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
- Organizer
  Electron Devices Technology and Manufacturing Conference (EDTM 2017)
- Place of Presentation
  Toyama, Japan
- Year and Date
  2017-02-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] 低温プロセスに向けたマイクロ波加熱処理によるNiGe/Ge接合の形成2017
- Author(s)
  中塚理, 渡部佳優, 鈴木陽洋, 西義雄, 財満鎭明
- Organizer
  応用物理学会シリコンテクノロジー分科会第198回研究集会
- Place of Presentation
  東京, 日本
- Year and Date
  2017-02-06
- Invited
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Ge1-xSnxゲートスタック構造における欠陥の物性評価2017
- Author(s)
  金田裕一, 池進一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of Epitaxial Hf Germanide/Ge Contacts for Schottky Barrier Height Engineering2017
- Author(s)
  O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima
- Organizer
  17th International Workshop on Junction Technology 2017 (IWJT2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] 水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化2017
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」
- Place of Presentation
  東レ研修センター
- Year and Date
  2017-01-21
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 有機金属化学気相成長法を用いて作製したGe1-xSnxゲートスタック構造の欠陥物性評価2017
- Author(s)
  金田裕一, 池進一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure2017
- Author(s)
  M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn and related group-IV alloy thin films for future Si nanoelectronics2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima
- Organizer
  The Tenth International Conference on High-Performance Ceramics (CICC-10)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 高濃度SbドーピングGe1-xSnxエピタキシャル層の熱的安定性2017
- Author(s)
  J. Jeon, 鈴木陽洋, 髙橋恒太, 中塚理, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Thermal Stability Study of in-situ Sb-Doped n- Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors2017
- Author(s)
  J. Jeon, A. Suzuki, O. Nakatsuka and, S. Zaima
- Organizer
  International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of GeSn and related semiconductor thin films for next generation optoelectronic applications2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  2017 Global Conference on Polymer and Composite Materials (PCM 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 金属/Ge接合へのSixGe1-x-ySny界面層導入がショットキー障壁高さに及ぼす効果2017
- Author(s)
  鈴木陽洋, 戸田祥太, 中塚理, 坂下満男, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第22回）
- Place of Presentation
  三島, 日本
- Year and Date
  2017-01-20
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer2017
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Control of Electrical Property at Metal/Ge Interface with Group-IV Alloy Interlayer2017
- Author(s)
  A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima
- Organizer
  International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Ge結晶中にCイオン注入により形成した電気的活性な欠陥の挙動2017
- Author(s)
  中島啓佑, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第17回日本表面科学会中部支部学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Control of Electrical Property at Metal/Ge Interface with Group-IV Alloy Interlayer2017
- Author(s)
  A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima
- Organizer
  International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 歪SOI基板上に形成したSi1-xSnx薄膜への高濃度p型ドーピング2017
- Author(s)
  稲石優, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Characterization of energy band structure of Si1-x-ySnxCy ternary alloy layers prepared with solid-phase crystallization2017
- Author(s)
  S. Yano, O. Nakatsuka, C. Lim, M. Sakashita, M. Kurosawa, and S. Zaima
- Organizer
  29th International Conference on Defects in Semiconductors (ICDS 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GaドープSi1-xSnx薄膜の結晶成長と電気特性評価2017
- Author(s)
  稲石優, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer2017
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors2017
- Author(s)
  J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
- Organizer
  Electron Devices Technology and Manufacturing Conference (EDTM 2017)
- Place of Presentation
  Toyama, Japan
- Year and Date
  2017-03-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 水中パルスレーザアニール法により形成した高濃度ドープp型/n型多結晶Ge1-xSnx薄膜の熱電特性2017
- Author(s)
  高橋恒太, 池上浩, 坂下満男, 中塚理, 財満鎭明, 黒澤昌志
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn系IV族混晶薄膜の結晶成長および物性制御技術2017
- Author(s)
  中塚理
- Organizer
  (公財)科学技術交流財団第5回「次世代デバイス実現に向けた先端二次元物質の物理と化学」研究会
- Invited
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water2017
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 水中パルスレーザアニールを用いた多結晶Ge1-xSnxへの高濃度ドーピング2017
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] In situ phosphorus doping of Ge and Ge1-xSnx epitaxial layers by low-temperature metal-organic chemical vapor deposition2017
- Author(s)
  S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  Sendai, Japan
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Numerical calculation of energy band offset of Si1-xSnx by density functional calculation2017
- Author(s)
  Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima
- Organizer
  The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators2017
- Author(s)
  M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates2017
- Author(s)
  I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  Sendai, Japan
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure2017
- Author(s)
  M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water2017
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 有機金属化学気相成長法を用いたパターンSiO2/Si基板上Ge1-xSnxエピタキシャル層の選択成長2017
- Author(s)
  竹内和歌奈, 鷲津智也, 池進一, 中塚理, 財満鎭明
- Organizer
  第17回日本表面科学会中部支部学術講演会
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 金属/SixGe1-x-ySny/Ge接合の電気伝導特性に対する電極材料の影響2017
- Author(s)
  鈴木陽洋, 中塚理 , 坂下満男, 財満鎭明
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic applications2017
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Solid phase epitaxy of Si1-xSnx layers on various substrates2017
- Author(s)
  M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima
- Organizer
  The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of GeSn-Related Group-IV Semiconductor Thin Films for Future Si Nanoelectronic Applications2017
- Author(s)
  S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Organizer
  the 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack2017
- Author(s)
  Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  Sendai, Japan
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers2016
- Author(s)
  M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka and S. Zaima
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of GeSn thin film technology for electronic and optoelectronic applications2016
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
- Organizer
  2016 Energy Materials Nanotechnology (EMN) Summer Meeting and Photodetectors Meeting
- Place of Presentation
  Mexico
- Year and Date
  2016-06-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si1-xSnx半導体のエネルギーバンド構造に関する理論的および実験的分析2016
- Author(s)
  長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
- Place of Presentation
  東レ研修センター
- Year and Date
  2016-01-22
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 金属/Ge界面へのIV 族混晶半導体層挿入によるショットキー障壁高さの低減2016
- Author(s)
  鈴木陽洋, 中塚理, 戸田祥太, 坂下満男, 財満鎭明
- Organizer
  2016年真空・表面科学合同講演会(公益社団法人日本表面科学会第36回表面科学学術講演会ならびに一般社団法人日本真空学会第57回真空に関する連合講演会)
- Place of Presentation
  名古屋、日本
- Year and Date
  2016-11-29
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Characterization of Deep-Level Defects in Ge1-xSnx Epitaxial Layers using Deep Level Transient Spectroscopy2016
- Author(s)
  W. Takeuchi, Y. Inuzuka, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials (7th JSPS Silicon Symposium)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2016-11-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Heavy Sb-doping for poly-GeSn on insulator using pulsed laser annealing in water2016
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2016-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Microwave Annealing for Low-Thermal Budget Process of Nickel Monogermanide/Germanium Contact Formation2016
- Author(s)
  O. Nakatsuka, Y. Watanabe”, A. Suzuki, Y. Nishi, and S. Zaima
- Organizer
  Advanced Metallization Conference 2016: 26th Asian Session (ADMETA Plus 2016)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2016-10-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Impact of SixGe1-x-ySny interlayer on reduction in Schottky barrier height of metal/n-Ge contact2016
- Author(s)
  A. Suzuki, S. Toda, O. Nakatsuka, M. Sakashita, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Low Temperature Crystallization of SiSn Binary Alloys2016
- Author(s)
  M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima
- Organizer
  The 1st International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-1)
- Place of Presentation
  Osaka, Japan
- Year and Date
  2016-10-17
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSiSn/GeSn/GeSiSn積層構造の形成および結晶物性の評価2016
- Author(s)
  福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第16回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2016-12-17
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers2016
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima
- Organizer
  JSPS Meeting 2016: Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"
- Place of Presentation
  Julich, Germany
- Year and Date
  2016-11-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Growth of Si1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates2016
- Author(s)
  M. Kurosawa, M. Kato, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Meeting 2016 : Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Forschungszentrum Jülich, Germany
- Year and Date
  2016-11-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Low-Temperature Selective Epitaxial Growth of Ge on Si by using Metal Organic Chemical Vapor Deposition2016
- Author(s)
  T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-08-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価2016
- Author(s)
  金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会（SDM）
- Place of Presentation
  キャンパス・イノベーションセンター東京
- Year and Date
  2016-06-29
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSiSn/GeSn/GeSiSn二重ヘテロ構造の結晶性に対するGeSiSn層の歪の影響2016
- Author(s)
  福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Challenges in Engineering Materials Properties for GeSn Nanoelectronics2016
- Author(s)
  S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Organizer
  The 2016 European Materials Research Society (E-MRS) Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Year and Date
  2016-09-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water2016
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Meeting 2016: Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Forschungszentrum Jülich, Germany
- Year and Date
  2016-11-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 界面エネルギー制御による絶縁膜上GeSn薄膜の低温結晶成長2016
- Author(s)
  吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
- Place of Presentation
  東レ研修センター
- Year and Date
  2016-01-22
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Determination of a 3D Displacement Field at a Vicinity of a GeSn/Ge Interface by the Phse Retrieval of Electron Rocking Curves2016
- Author(s)
  M. Miura, S. Fujinami, K. Saitoh, N. Tanaka, O. Nakatsuka, and S. Zaima
- Organizer
  The 5th International Symposium on Advanced Microscopy and Theoretical Calculations
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-05-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Impact of Atomic Hydrogen Irradiation on Epitaxial Growth of Ge1-xSnx and its Crystalline Property2016
- Author(s)
  S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, O. Nakatsuka, H. Kishida, S. Zaima
- Organizer
  ISPlasma 2016 / IC-PLANTS 2016
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-03-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 原子層堆積法を用いたGeO2/Ge界面形成および欠陥の堆積温度依存性2016
- Author(s)
  兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第21回）
- Place of Presentation
  東レ研修センター
- Year and Date
  2016-01-22
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Control of the Fermi level pinning position at metal/Ge interface by using Ge1-xSnx interlayer2016
- Author(s)
  A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] MOCVD法を用いたin situ PドープGe薄膜のエピタキシャル成長2016
- Author(s)
  池進一, 志村洋介, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures By Using Synchrotron X-Ray Microdiffraction2016
- Author(s)
  S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, and S. Zaima
- Organizer
  Pacific Rim Meeting 2016 Joint The 230th Electrochemical Society Meeting (PRiME 2016/230th ECS Meeting)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2016-10-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si1-xSnx 価電子帯端オフセットの第一原理計算2016
- Author(s)
  長江祐樹, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Growth of Heavily Doped n-Ge Epitaxial Layer by In situ Phosphorus-doping with Low-temperature Metal-Organic Chemical Vapor Deposition2016
- Author(s)
  S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2016-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] MOCVD法を用いたin situ Pドーピングによる高濃度n型Geエピタキシャル成長2016
- Author(s)
  池進一, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Growth and applications of GeSn-related group-IV semiconductor materials2016
- Author(s)
  S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita
- Organizer
  IEEE 2016 Summer Topicals Meeting Series
- Place of Presentation
  NewPort Beach, USA
- Year and Date
  2016-07-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Effect of local and global strain on thermal stability of Sn in GeSn based film2016
- Author(s)
  Y. Shimura, T. Asano, T. Yamaha, O. Nakatsuka, and S. Zaima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-06-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation and Characterization of GeSiSn/GeSn/GeSiSn Double-Heterostructure with Strain-controlled GeSiSn layer2016
- Author(s)
  M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Determination of a 3D Displacement Field at a Vicinity of a GeSn/Ge Interface by the Phase Retrieval of Electron Rocking Curves2016
- Author(s)
  K. Saitoh, M. Miura, N, Tanaka, O. Nakatsuka, and S. Zaima
- Organizer
  The 16th European Microscopy Congress
- Place of Presentation
  Lyon, France
- Year and Date
  2016-08-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Direct Measurement of Anisotropic Local Strain in Ge Nanostructures Strained with MOCVD-grown Ge1-xSnx by using Microdiffraction2016
- Author(s)
  S. Ike, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Shimura, Y. Imai, O. Nakatsuka, S. Kimura, and S. Zaima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-06-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers2016
- Author(s)
  J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka and S. Zaima
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Growth and applications of GeSn-related group-IV semiconductor materials2016
- Author(s)
  S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita
- Organizer
  IEEE 2016 Summer Topicals Meeting Series
- Place of Presentation
  California, USA
- Year and Date
  2016-07-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Investigation of effects of inner stress with Sn incorporation on energy band of Si1-xSnx using density functional theory and photoelectron spectroscopy2016
- Author(s)
  Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima
- Organizer
  2016 International Conference on Solid State Devices and Materials (SSDM 2016)
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2016-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sn系IV族半導体混晶薄膜の成長と物性評価2016
- Author(s)
  志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会（SDM）有機エレクトロニクス研究会（OME）共催
- Place of Presentation
  沖縄県立博物館・美術館
- Year and Date
  2016-04-08
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer2016
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Si(001)基板上におけるSi1-xSnx薄膜の固相エピタキシャル成長2016
- Author(s)
  稲石優, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  2016年真空・表面科学合同講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2016-11-30
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 水中パルスレーザアニールを用いた多結晶GeSnへの高濃度n型ドーピング2016
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-06
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping2016
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn系IV族半導体薄膜におけるSn導入の制御と効果2016
- Author(s)
  志村洋介, 池進一, Gencarelli Federica, 竹内和歌奈, 坂下満男, 黒澤昌志, Loo Roger, 中塚理, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-14
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 歪制御によるGeSn系混晶薄膜中Sn原子の熱的安定化2016
- Author(s)
  志村洋介, 浅野孝典, 山羽隆, 中塚理, 財満鎭明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Interfacial Energy Control for Low-Temperature Crystallization of Ge-rich GeSn Layers on Insulating Substrate2016
- Author(s)
  I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting (ISTDM 2016)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] マイクロ回析法によるMOCVD-Ge1-xSnx/Ge細線構造内部の局所歪量評価2016
- Author(s)
  犬塚雄貴, 池進一, 鷲津智也, 竹内和歌奈, 志村洋介 ,今井康彦, 木村滋, 中塚理, 財満鎭明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers2016
- Author(s)
  J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] 金属/n-Ge接合へのSixGe1-x-ySny層挿入によるショットキー障壁高さの低減2016
- Author(s)
  鈴木陽洋, 戸田祥太, 中塚理, 坂下満男, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟, 日本
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] GeSiSn/GeSn/GeSiSn二重ヘテロ構造形成およびGeSiSn層の歪が結晶性へ与える影響2016
- Author(s)
  福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 志村洋介, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第4回応用物理学会スチューデントチャプター東海地区学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2016-10-29
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 有機金属化学気相成長によるエピタキシャルGe1-xSnx薄膜の選択成長2016
- Author(s)
  鷲津智也, 池進一, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  新潟朱鷺メッセ
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 金属/Ge界面へのGe1-xSnx層挿入によるフェルミレベルピニング位置のシフト2016
- Author(s)
  鈴木陽洋,中塚理, 坂下満男, 財満鎭明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Development of polycrystalline Sn-related group-IV semiconductor thin films - Aiming for 3D-IC2015
- Author(s)
  M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2015)
- Place of Presentation
  Jeju island, Korea
- Year and Date
  2015-06-29
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Thermophysical characterizations of Ge1-xSnx epitaxial layers aiming for thermoelectric devices2015
- Author(s)
  M. Kurosawa, M. Fukuda, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si1-x-ySnxCy三元混晶薄膜のエピタキシャル成長および結晶性評価2015
- Author(s)
  山羽隆, 矢野翔太, 髙橋恒太, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Influence of Atomic Layer Deposition Temperature of GeO2 Layer on Electrical Properties of Ge Gate Stack2015
- Author(s)
  M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
- Organizer
  2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 原子層堆積法を用いたGeO2/Ge界面の低温形成と電気的特性評価2015
- Author(s)
  兼松正行, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Characterization of electrically active defects in epitaxial GeSn/n-Ge junctions2015
- Author(s)
  W. Takeuchi, Y. Inuzuka, T. Asano, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Si1-xSnx薄膜の固相エピタキシャル成長に与えるSn組成の効果2015
- Author(s)
  加藤元太, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 超高Sn 組成SnxGe1－xエピタキシャル層の形成および金属/SnxGe1-x/Ge コンタクトの電気伝導特性の制御2015
- Author(s)
  鈴木陽洋, 中塚理, 柴山茂久, 坂下満男, 竹内和歌奈,黒澤昌志, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer2015
- Author(s)
  J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2015)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Crystal growth and energy band engineering of group-IV semiconductor thin films for nanoelectronic applications2015
- Author(s)
  O. Nakatsuka, M. Kurosawa, W. Takeuchi, Y. Shimura, M. Sakashita, and S. Zaima
- Organizer
  International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystalline and Electrical Properties of Ge1-xSnx Epitaxial Layers with in-situ Sb-Doping2015
- Author(s)
  全智禧, 浅野孝典, 志村洋介, 竹内和歌奈, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2015(JSAP SCTS 2015)
- Place of Presentation
  名古屋大学
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of Ge pn-junction diode by phosphorus doping with liquid immersion laser irradiation2015
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
- Organizer
  15th International Workshop on Junction Technology 2015 (IWJT 2015)
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2015-06-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystalline and Electrical Properties of Ge1-xSnx Epitaxial Layers with in-situ Sb-Doping2015
- Author(s)
  全智禧, 浅野孝典, 志村洋介, 竹内和歌奈, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny二重ヘテロ接合の形成および結晶性評価2015
- Author(s)
  福田雅大, 山羽隆, 浅野孝典, 藤浪俊介, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Characterization of Deep-level Defects in Epitaxial Ge1-xSnx/Ge structure2015
- Author(s)
  W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka and S. Zaima
- Organizer
  JSPS International Core-to-Core Program Workshop Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Marseille, France
- Year and Date
  2015-07-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Control of Schottky Barrier Height at Metal/Ge Interface by SnxGe1-x Interlayer2015
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Control of Electrically Active Defects in Ge1-xSnx Epitaxial Layers2015
- Author(s)
  T. Asano, S. Shibayama, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform2015
- Author(s)
  S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi and M. Sakashita
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge1-xSnx Epitaxial Layer2015
- Author(s)
  J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, O. Nakatsuka and S. Zaima
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Evaluation of Energy Band Structure of Si1-xSnx by Density Functional Theory Calculation and Photoelectron Spectroscopy2015
- Author(s)
  Y. Nagae, S. Shibayama, M. Kurosawa, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, S. Zaima
- Organizer
  2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (2015 IWDTF)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2015-11-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Solid Phase Epitaxy of High Sn Content Si1-xSnx layer (x>0.2) on Ge Substrates for Optical Communication Applications2015
- Author(s)
  M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits2015
- Author(s)
  S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Organizer
  The 228th Electrochemical Society Meeting
- Place of Presentation
  Phoenix, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Schottky Barrier Engineering by Epitaxial Metal Germanide / Germanium Contacts2015
- Author(s)
  O. Nakatsuka, Y. Deng, A. Suzuki, M. Sakashita, and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Recent Progress of Silicon Tin Alloys for Advanced Semiconductor Devices2015
- Author(s)
  M. Kurosawa, O. Nakatsuka, and S. Zaima
- Organizer
  International Workshop on Advanced Nanomaterials for Future Electron Devices 2015 (IWAN 2015)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Strain measurement of heteroepitaxial GeSn/Ge with a finFET structure2015
- Author(s)
  K. Saitoh, K. Doi, N. Tanaka, S. Ike, O. Nakatsuka and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] ナノビーム電子回折法をもちいたGeSn/Ge微細構造の歪み分布解析2015
- Author(s)
  齋藤晃, 土井健太郎, 池進一, 中塚理，財満鎭明
- Organizer
  日本顕微鏡学会第71回学術講演会
- Place of Presentation
  国立京都国際会館
- Year and Date
  2015-05-13
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge1-xSnxエピタキシャル層中における欠陥形成に対するSn組成の影響2015
- Author(s)
  浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 高Sn組成SiSnの形成とバンド構造～直接遷移構造化を目指して～2015
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会有機エレクトロニクス研究会(OME), シリコン材料・デバイス研究会(SDM) 共催
- Place of Presentation
  大濱信泉記念館多目的ホール(沖縄)
- Year and Date
  2015-04-29
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] X-ray Microdiffraction Characterization of Local Strain Distribution in GeSn/Ge Nanostructures2015
- Author(s)
  S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 密度汎関数法によるSi1-xSnx価電子帯端準位の理論予測および実験的妥当性2015
- Author(s)
  長江祐樹, 柴山茂久, 黒澤昌志, 洗平昌晃, 中塚理, 白石賢二, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2015(JSAP SCTS 2015)
- Place of Presentation
  名古屋大学
- Year and Date
  2015-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Effects of in-situ Sb-Doping on Crystalline and Electrical Characteristics of Ge1-xSnx Epitaxial Layer2015
- Author(s)
  J. Jeon, T. Asano, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋
- Year and Date
  2015-09-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] InP(001)基板上における高Sn組成Si1-xSnx層の固相エピタキシャル成長2015
- Author(s)
  加藤元太, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第15回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学
- Year and Date
  2015-12-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits2015
- Author(s)
  S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Organizer
  The 228th Electrochemical Society Meeting
- Place of Presentation
  Phoenix, USA
- Year and Date
  2015-10-11
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] 有機金属化学気相成長法によるSiおよびSiO2基板上のGe選択成長機構の考察2015
- Author(s)
  鷲津智也, 犬塚雄貴, 浅野孝典, 池進一, 竹内和歌奈, 志村洋介, 中塚理, 財満鎭明
- Organizer
  第15回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学
- Year and Date
  2015-12-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Electrical Characteristics of Ge pn-junction Diodes Prepared by Using Liquid Immersion Laser Doping2015
- Author(s)
  K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge基板上への超高Sn組成Ge1-xSnxエピタキシャル層の形成およびGe1－xSnx界面層が金属/Geコンタクトのショットキー障壁高さに及ぼす影響2015
- Author(s)
  鈴木陽洋, 中塚理, 柴山茂久, 坂下満男, 竹内和歌奈, 黒澤昌志, 財満鎭明
- Organizer
  第4回結晶工学未来塾
- Place of Presentation
  東京
- Year and Date
  2015-10-29
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Calculation of Si1-xSnx Energy Band Structures by using Density Functional Theory Considering Atomic Configuration2015
- Author(s)
  Y. Nagae, M. Kurosawa, S. Shibayama, O. Nakatsuka, S. Zaima
- Organizer
  International Symposium on EcoTopia Science 2015 (ISETS '15)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2015-11-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 有機金属化学気相成長法を用いたGe薄膜選択成長2015
- Author(s)
  鷲津智也, 犬塚雄貴, 浅野孝典, 池進一, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御2015
- Author(s)
  鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会（SDM）
- Place of Presentation
  名古屋
- Year and Date
  2015-06-19
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Characterization of Crystallinity of Ge1-xSnx Epitaxial Layers Grown by using Metal-Organic Chemical Vapor Deposition2015
- Author(s)
  Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 9th International Conference On Silicon Epitaxy And Heterostructures (ICSI-9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Reduction of Schottky barrier height with Sn/Ge contact2015
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
- Organizer
  JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Marseille, France
- Year and Date
  2015-07-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] GeSn多結晶膜の移動度に与える下地絶縁膜の効果2015
- Author(s)
  吉川勲, 黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果2015
- Author(s)
  浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  名古屋大学
- Year and Date
  2015-06-19
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] エピタキシャル金属/ゲルマニウム接合の形成による界面電気伝導特性の制御2015
- Author(s)
  中塚理, 鄧云生, 鈴木陽洋, 坂下満男, 田岡紀之, 財満鎭明
- Organizer
  応用物理学会シリコンテクノロジー分科会第180回研究集会（多層配線システム研究委員会研究
- Place of Presentation
  機械技術振興会館
- Year and Date
  2015-03-02
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystal Growth of GeSn-related Group-IV Thin Films for Integrating on Si Nanoelectronics Platform2015
- Author(s)
  S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, and M. Sakashita
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2015)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Impact of ultra-high Sn content SnxGe1-x interlayer on reducing Schottky barrier height at metal/n-Ge interface2015
- Author(s)
  A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2015)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03565
[Presentation] Ge1-x-ySixSnyエピタキシャル層の結晶性の歪構造依存性2014
- Author(s)
  浅野孝典, 寺島辰也, 山羽隆, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sn/Ge界面の結晶構造およびショットキー障壁高さのGe面方位依存性2014
- Author(s)
  鈴木陽洋, Y. Deng, 柴山茂久, 黒澤昌志, 坂下満男, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 熱酸化におけるGe (001)基板上Gel-xSnx層の表面Sn析出に対する熱安定性2014
- Author(s)
  加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sbドープn型Ge中のSn関連欠陥の挙動2014
- Author(s)
  竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第14回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2014-12-20
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 水中レーザ結晶化によるpoly-GeSnの大粒径成長とデバイス応用2014
- Author(s)
  黒澤昌志, 池上浩, 鎌田善己, 田岡紀之, 中塚理, 手塚勉, 財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Si添加によるSnドット化抑制と層交換成長への応用2014
- Author(s)
  黒澤昌志, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] MOCVD法により形成した極薄GeO2を用いたAl203/GeOx/Ge構造の電気的特性および構造評価2014
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」(第19回)
- Place of Presentation
  ニューウェルシティー湯河原
- Year and Date
  2014-01-24
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge単結晶中の格子欠陥へのSnの効果2014
- Author(s)
  竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] パルスMOCVD法を用いたGe(011)基板上における正方晶GeO2膜の形成2014
- Author(s)
  柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 有機金属化学気相成長法によるGe1-xSnxエピタキシャル層形成2014
- Author(s)
  犬塚雄貴, 池進一, 浅野孝典, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第14回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2014-12-20
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件2014
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」(第19回)
- Place of Presentation
  ニューウェルシティー湯河原
- Year and Date
  2014-01-24
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] リン酸溶液中レーザドーピングにより低温形成したGe pnダイオードの電気的特性2014
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 酸化プロセスにおけるゲート絶縁膜/Ge界面の界面準位密度を決定づける物理的要因2014
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 固相エピタキシャル成長法を用いた高Sn組成SiSn層の形成2014
- Author(s)
  加藤元太, 黒澤昌志, 山羽隆, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 有機金属原料化学気相成長法によるGe1-xSnxエピタキシャル層の結晶性2014
- Author(s)
  犬塚雄貴, 池進一, 浅野孝典, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2014(JSAP SCTS 2014)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-11-08
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性2014
- Author(s)
  加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」(第19回)
- Place of Presentation
  ニューウェルシティー湯河原
- Year and Date
  2014-01-24
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 液相SnへのGe優先溶融を利用したSiGeSn薄膜の極低温エピタキシャル成長2014
- Author(s)
  加藤元太, 黒澤昌志, 山羽隆, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Si (110)上Ge1-xSnxエピタキシャル薄膜の成長機構および転位構造2013
- Author(s)
  木戸脇翔平, 浅野孝典, 黒澤昌志, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第13回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学
- Year and Date
  2013-12-21
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 水中レーザーアニール法による多結晶Ge1-xSnx薄膜の低温形成2013
- Author(s)
  黒澤昌志，田岡紀之，中塚理，池上浩，財満鎭明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al203/Ge構造の後熱酸化によるAlGeO形成にともなう界面特性の改善2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2013 (JSAP SCTS2013)
- Place of Presentation
  名古屋大学
- Year and Date
  2013-11-16
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Interaction of Sn atoms with Defects Introduced by Ion Implantation in Ge Substrate2013
- Author(s)
  T. Arahira, M. Fukudome, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2013)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Stabilization for Higher-k Films with Meta-Stable Crystalline Structure2013
- Author(s)
  K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program workshop Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Frankfurt (Oder), Germany
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成2013
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会 ─材料・プロセス・評価の物理─（第18回研究会）
- Place of Presentation
  湯河原
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造の熱酸化による界面構造変化と界面特性との相関関係2013
- Author(s)
  柴山茂久，加藤公彦，坂下満男，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Physical Factor of Other Element Incorporation for Tetragonal ZrO2 Formation2013
- Author(s)
  K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  NIMS Conference 2013 Structure Control of Atomic / Molecular Thin Films and Their Applciations
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Quantitative Guideline for Formation of Ge MOS Interface with Low Interface State Density2013
- Author(s)
  S. Shibayama, K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka. and S. Zaima
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCIENCE AND TECHNOLOGY-
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Development of Gel-xSnx and Gel-x-ySixSny Thin Film Materials for Future Electronic Applications2013
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  International Conference on THERMEC' 2013
- Place of Presentation
  Las Vegas, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Large grain growth of poly-GeSn on insulator by pulsed laser annealing in water2013
- Author(s)
  M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2013)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Crystalline Phase Control of Pr-Oxide Films by Regulating Oxidant Partial Pressure and Si Diffusion2013
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 角度分解光電子X線分光法によるGeおよびGe1-xSnx表面電子状態の分析2013
- Author(s)
  中塚理、池進一, 浅野孝典, 黒澤昌志, 田岡紀之, 財満鎭明
- Organizer
  UVSORシンポジウム2013
- Place of Presentation
  自然科学研究機構岡崎コンファレンスセンター
- Year and Date
  2013-12-07
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 準安定正方晶ZrO2構造の安定化機構の解明2013
- Author(s)
  加藤公彦, 斉藤貴俊, 坂下満男, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/Ge構造におけるゲート金属が界面反応に与える影響2013
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会 ─材料・プロセス・評価の物理─（第18回研究会）
- Place of Presentation
  湯河原
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] A comparative study of metal germanide formation on Ge1-xSnx2013
- Author(s)
  J. Demeulemeester, A. Schrauwen, K. Van Stiphout, O. Nakatsuka, M. Adachi, Y. Shimura, S. Zaima, C. M. Comrie, C. Detavernier, K. Temst, and A. Vantommea
- Organizer
  Materials for Advanced Metallization
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sn/n型Geコンタクトにおけるショットキー障壁高さの低減2013
- Author(s)
  鈴木陽洋, 朝羽俊介, 横井淳, 中塚理, 黒澤昌志, 坂下満男, 田岡紀之, 財満鎭明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Year and Date
  2013-09-20
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sn導入による非晶質SiGe混晶薄膜の低温結晶化2013
- Author(s)
  山羽隆, 荒平貴光, 黒澤昌志, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Robustness of Sn Precipitation During Thermal Process of Gel-xSnx2013
- Author(s)
  K. Kato, T. Asano, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCIENCE AND TECHNOLOGY-
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al203/Ge Interface2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  224th The Electrochemical Society (ECS) Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sn/n型Ge接合界面におけるフェルミレベルピニング変調2013
- Author(s)
  鈴木陽洋, 朝羽俊介, 横井淳, 加藤公彦, 黒澤昌志, 坂下満男, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2013 (JSAP SCTS2013)
- Place of Presentation
  名古屋大学
- Year and Date
  2013-11-16
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge1-xSnxエピタキシャル層の結晶性が発光特性に及ぼす影響2013
- Author(s)
  保崎航也, 小山剛史, 黒澤昌志, 田岡紀之, 中塚理, 岸田英夫, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2013 (JSAP SCTS2013)
- Place of Presentation
  名古屋大学
- Year and Date
  2013-11-16
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge1-xSnxヘテロエピタキシャル成長に与えるSn導入効果2013
- Author(s)
  木戸脇翔平，浅野孝典，黒澤昌志，田岡紀之，中塚理，財満鎭明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 圧縮歪Ge1-xSnxエピタキシャル層の電気伝導特性2013
- Author(s)
  浅野孝典，黒澤昌志，田岡紀之，坂下満男，中塚理，財満鎭明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Lateral Growth Enhancement of Poly-Gel-xSnx on SiO2 using a Eutectic Reaction2013
- Author(s)
  M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits2013
- Author(s)
  N. Taoka, M. Kurosawa, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Formation of Tetragonal ZrO2 Thin Film by ALD Method2013
- Author(s)
  K. Kato, T. Saito, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 低温固相成長GeへのSn導入による正孔移動度の向上2013
- Author(s)
  竹内和歌奈, 田岡紀之, 黒澤昌志, 中塚理, 財満鎭明
- Organizer
  第13回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学
- Year and Date
  2013-12-21
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 酸化剤分圧およびSi拡散の制御によるPr酸化膜結晶構造制御2013
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭一
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  機械振興会館
- Year and Date
  2013-06-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Impacts of AlGeO Formation by Post Thermal Oxidation of Al203/Ge Structure on Interface Properties2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8) and the 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Interface Properties of Al203/Ge MOS Structures with Thin Ge Oxide Interfacial Layer Formed by Pulsed MOCVD2013
- Author(s)
  T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  2013 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES-SCIENCE AND TECHNOLOGY-
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GOI基板上に形成したGe1-xSnxエピタキシャル層の電気特性評価2013
- Author(s)
  大村拓磨, 浅野孝典, 黒澤昌志, 田岡紀之, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造に対する熱酸化機構の解明2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会 ─材料・プロセス・評価の物理─（第18回研究会）
- Place of Presentation
  湯河原
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Development of Ge_<1-x>Sn_x and Ge_<1-x-y>Si_xSn_y Thin Film Materials for Future Electronic Applications2013
- Author(s)
 O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
 International Conference on THERMEC'2013
- Place of Presentation
 Las Vegas, USA(招待講演)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] 非晶質SiGe混晶薄膜の結晶化に対するSn導入効果2013
- Author(s)
  山羽隆, 黒澤昌志, 荒平貴光, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  応用物理学会SC東海地区学術講演会2013 (JSAP SCTS2013)
- Place of Presentation
  名古屋大学
- Year and Date
  2013-11-16
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 高Sn組成Ge1-xSnxエピタキシャル層の光学特性2013
- Author(s)
  保崎航也, 小山剛史, 黒澤昌志, 田岡紀之, 中塚理, 岸田英夫, 財満鎭明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Interfacial Reactions in Al2O3/Ge Structures2013
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications : Challenges and Opportunities2013
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, S. Zaima
- Organizer
  224th The Electrochemical Society (ECS) Meeting
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications : Challenges and Opportunities2013
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, S. Zaima
- Organizer
  224th The Electrochemical Society (ECS) Meeting
- Place of Presentation
  San Francisco, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Interaction between Sn atoms and Defects Introduced by Ion Implantation in Ge Substrate2013
- Author(s)
  N. Taoka, M. Fukudome, T. Arahira, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program workshop Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Frankfurt (Oder), Germany
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Defects introduced in germanium substrate by reactive ion etching2013
- Author(s)
  Kusumandari, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, S. Zaima
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Al2O3/Ge interfacial structures by post oxidation technique using oxygen radical2013
- Author(s)
  K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge (001)基板上に成長したGel-xSnxエピタキシャル層の結晶構造および光学特性2013
- Author(s)
  保崎航也, 小山剛史, 黒澤昌志, 田岡紀之, 中塚理, 岸田英夫, 財満鎭明
- Organizer
  第2回結晶工学未来塾
- Place of Presentation
  学習院創立百周年記念会館(研究ポスター発表会)
- Year and Date
  2013-11-07
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] テトラエトキシゲルマニウムによる極薄GeO2膜の形成2013
- Author(s)
  吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  機械振興会館
- Year and Date
  2013-06-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn)2013
- Author(s)
  M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima
- Organizer
  6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Reduction of Schottky Barrier Height for n-type Ge Contact by using Sn Electrode2013
- Author(s)
  A. Suzuki, Shunsuke Asaba, J. Yokoi, O. Nakatsuka, M. Kurosawa, K. Kato, M. Sakashita, N. Taoka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2013)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] H2O分圧によるPr価数およびPr酸化膜の結晶構造制御2013
- Author(s)
  加藤公彦，坂下満男，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sn-related Group-IV Semiconductor Materials for Electronic and Optoelectronic Applications2013
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
- Organizer
  The 3rd International Conference on Nanoteck & Expo
- Place of Presentation
  Las Vegas, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge1-xSnxヘテロエピタキシャル成長に与える基板面方位効果2013
- Author(s)
  黒澤昌志，木戸脇翔平，浅野孝典，田岡紀之，中塚理，財満鎭明
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 過飽和状態制御による多結晶Sil-xSnx/絶縁膜の大粒径成長2013
- Author(s)
  黒澤昌志, 荒平貴光, 山羽隆, 田岡紀之, 中塚理, 財満鎮明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 界面反応機構に基づくAl203/Ge界面構造制御2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al203/Ge構造における酸化機構の解明と界面反応がその特性に及ぼす影響2013
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  機械振興会館
- Year and Date
  2013-06-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effect of Gate Metal Electrode on Chemical Bonding State in Metal/Pr-oxide/Ge Gate Stack Structure2012
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 6th International SiGe Technology and Device Meeting (ISTDM2012)
- Place of Presentation
  Barkeley, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] ゲート金属の還元性に基づくPr酸化膜/Ge界面反応制御2012
- Author(s)
  加藤公彦，坂下満男，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造へのN-O混合ラジカル処理による界面反応と電気的特性の制御2012
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Electrical Characterization of p-Ge1-xSnx/p-Ge and p-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy2012
- Author(s)
  B. Baert, D. Y. N. Truonga, O. Nakatsuka, S. Zaima, and N. D. Nguyen
- Organizer
  The 6th International SiGe Technology and Device Meeting (ISTDM2012)
- Place of Presentation
  Barkeley, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Material properties and applications of Ge1-xSnx alloys for Ge Nanoelectronics2012
- Author(s)
  O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima
- Organizer
  The 6th International SiGe Technology and Device Meeting (ISTDM2012)
- Place of Presentation
  Barkeley, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Importance of Si Bandbending at Zero Bias Condition for Schottky Barrier Height Control at Metal/Si Interfaces with Ultra-thin Al2O3 Layer2012
- Author(s)
  H. Matsushita, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka and S. Zaima
- Organizer
  IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effect of N Radical Process on Interfacial and Electrical Properties of Al2O3/Ge Structure2012
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 5th International Conference on PLasma-NanoTechnology & Science (IC-PLANTZ2012)
- Place of Presentation
  Inuyama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Thermal Oxidation Mechanism of Ge through Al2O3 Layer Formed on Ge Substrate2012
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Growth and Optical Properties of Ge_<1-x>Sn_x Alloy Thin Films with a High Sn Content2012
- Author(s)
 S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
- Organizer
 The PRiME 2012 Joint International (222nd) ECS Meeting
- Place of Presentation
 Honolulu, USA(招待講演)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] 金属電極がPr酸化膜/Ge構造の化学結合状態に与える影響2012
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sn触媒を用いた非晶質Ge薄膜/絶縁膜の低温成長2012
- Author(s)
  黒澤昌志，田岡紀之，坂下満男，中塚理，宮尾正信，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Potential of GeSn Alloys for Application to Si Nanoelectronics2012
- Author(s)
  S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka
- Organizer
  2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
- Place of Presentation
  Naha, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] In situ Sb doping in Ge1-xSnx Epitaxial Layers with High Sn Contents2012
- Author(s)
  K. Hozaki, M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Potential of GeSn Alloys for Application to Si Nanoelectronics2012
- Author(s)
  S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka
- Organizer
  2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
- Place of Presentation
  Naha, Japan(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 低温固相結晶化による高移動度poly-GeSn層の形成2012
- Author(s)
  竹内和歌奈，田岡紀之，黒澤昌志，福留誉司，坂下満男，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge単結晶中の格子欠陥への熱処理雰囲気および他元素導入の影響2012
- Author(s)
  福留誉司，竹内和歌奈，田岡紀之，坂下満男，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造へのN-O混合ラジカル処理による界面反応と電気的特性の制御 Si(110)基板上におけるGeおよびGe1-xSnxヘテロエピタキシャル成長2012
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明木戸脇翔平,浅野孝典,志村洋介,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造に対する酸素熱処理温度依存性およびその界面反応機構2012
- Author(s)
  柴山茂久,加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content2012
- Author(s)
  S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
- Organizer
  The PRiME 2012 Joint International (222nd) ECS Meeting
- Place of Presentation
  Honolulu, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Impedance Spectroscopy of GeSn/Ge Heterostructures by a Numerical Method2012
- Author(s)
  B. Baert, O. Nakatsuka, S. Zaima, and N. Nguyen
- Organizer
  The PRiME 2012 Joint International (222nd) ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 高Sn組成Ge1-xSnx層へのin situ Sbドーピング2012
- Author(s)
  保崎航也，中村茉里香，志村洋介，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Epitaxial Growth of Ge1-xSnx Layers on (110)-oriented Si and Ge Substrates2012
- Author(s)
  T. Asano, S. Kidowaki, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Impact of Sn corporation on Epitaxial Growth of Ge Layers on Si(110) Substrates2012
- Author(s)
  S. Kidowaki, T. Asano, Y. Shimura, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] ヘテロエピタキシャルGe1-xSnx中のGa活性化に及ぼすSnの効果2012
- Author(s)
  志村洋介, 中塚理, B. Vincent, G. Federica, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D. Petersen, 財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Electrical Properties of Epitaxially Grown p+-Ge1-xSnx/n-Ge Diodes2012
- Author(s)
  S. Asaba, J. Yokoi, H. Matsuhita, D. Yunsheng, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  IUMRS International Conference on Electronic Materials (IUMRS-ICEM2012)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Epitaxial Growth and Characterizations of Ge1-xSnx and Ge1-x-ySixSny Thin Layers for Nanoelectronic and Optoelectronic Applications2012
- Author(s)
  O. Nakatsuka, N. Taoka, M. Sakashita, W. Takeuchi, S. Zaima
- Organizer
  University of Vigo and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  Vigo, Spain
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] テトラエトキシゲルマニウムを用いた原子層堆積法によるGe酸化膜の形成2012
- Author(s)
  吉田鉄兵，加藤公彦，柴山茂久，坂下満男，竹内和歌奈，田岡紀之，中塚理，財満鎭明
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] ラジカルプロセスによるAl2O3/Ge界面特性の改善2012
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-（第１7回研究会）
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 超高Sn組成Ge1-xSnx層の光学特性評価2012
- Author(s)
  中村茉里香,志村洋介,竹内和歌菜,中塚理,財満鎭明
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] The effect of light exposure on the electrical properties of GeO2/Ge gate stack2012
- Author(s)
  Kusumandari, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  4th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2012)
- Place of Presentation
  Kasugai, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures2012
- Author(s)
  Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
- Place of Presentation
  Naha, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents2012
- Author(s)
  M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  The 6th International SiGe Technology and Device Meeting (ISTDM2012)
- Place of Presentation
  Barkeley, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] High Mobility Poly-GeSn Layer Formed by Low Temperature Solid Phase Crystallization2012
- Author(s)
  W. Takeuchi, N. Taoka, M. Kurosawa, M. Fukutome, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Geに対する酸素熱処理が電気的特性および化学結合状態に与える効果2012
- Author(s)
  柴山茂久,加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-（第１7回研究会）
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Material properties and applications of Ge_<1-x>Sn_x alloys for Ge Nanoelectronics2012
- Author(s)
 O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima
- Organizer
 The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. 12.1
- Place of Presentation
 Barkeley, USA(招待講演)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical2012
- Author(s)
  K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2012)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Characterization of Damages of Al_2O_3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation2011
- Author(s)
  Kusumandari, W.Takeuchi, K.Kato, M.Sakashita, O.Nakatsuka, S.Zaima
- Organizer
  The 3rd International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPLasma2011)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al_2O_3界面層およびラジカル窒化法によるHigh-k/Ge界面構造2011
- Author(s)
  加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] InP基板上への超高Sn組成Ge_<1-x>Sn_xヘテロエピタキシャル層成長2011
- Author(s)
 中村茉里香, 志村洋介, 竹内正太郎, 中塚理, 財満鎭明
- Organizer
 第58回応用物理学関係連合講演会
- Place of Presentation
 神奈川工科大学(神奈川県)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Materials Innovation in Si Nanoelectronics2011
- Author(s)
  S. Zaima and O. Nakatsuka
- Organizer
  2011 Tsukuba Nanotechnology Symposium (TNS'11)
- Place of Presentation
  Tsukuba, Japan(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] ラジカル窒化法によるAl2O3/Ge構造の界面特性改善2011
- Author(s)
  加藤公彦,坂下満男,竹内和歌奈,中塚理,財満鎭明
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Low Temperature Formation of Si1-x-yGexSny-on-Insulator Structures by Using Solid-Phase Mixing of Ge1-zSnz/Si-on-Insulator Substrates2011
- Author(s)
  K. Mochizuki, T. Yamaha, Y. Shimura, O. Nakatsuka, and S. Zaima
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Surface and Interfacial Structure by Radical Nitridation Technique for Ge MOS Transistors2011
- Author(s)
  K.Kato, H.Kondo, M.Sakashita, W.Takeuchi, O.Nakatsuka, S.Zaima
- Organizer
  The 4th International Conference on PLAsma-Nano Technology & Science
- Place of Presentation
  Gifu, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Influence of Light Radiation on Electrical Properties of Al_2O_3/Ge and GeO_2/Ge Gate Stacks in Nitrogen Plasma2011
- Author(s)
  Kusumandari, W.Takeuchi, K.Kato, M.Sakashita, O.Nakatsuka, S.Zaima
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GeSn Technology: Impact of Sn on Ge CMOS Applications2011
- Author(s)
  S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
- Organizer
  220th Electro Chemical Society Meeting
- Place of Presentation
  Boston, USA
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/Si構造へのAl導入による界面反応抑制効果2011
- Author(s)
  古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GeSn Technology : Impact of Sn on Ge CMOS Applications2011
- Author(s)
  S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
- Organizer
  220th Electro Chemical Society Meeting
- Place of Presentation
  Boston, USA(招待講演)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 固相拡散法を用いたSi_<1-x-y>Ge_xSn_y on Insulator構造の形成2011
- Author(s)
 望月健太, 山羽隆, 志村洋介, 中塚理, 財満鎭明
- Organizer
 第58回応用物理学関係連合講演会
- Place of Presentation
 神奈川工科大学(神奈川県)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] 電流検出型原子間力顕微鏡を用いた欠陥に起因するPr酸化膜のリーク電流機構の解明2011
- Author(s)
  足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 次世代ナノCMOSにおける物性制御と不純物2011
- Author(s)
  財満鎭明, 中塚理, 竹内正太郎
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 熱処理によるAl_2O_3/Ge界面構造制御2011
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] In-situ Ga Doping to Fully Strained Ge1-xSnx Heteroepitaxial Layers Grown on Ge(001) Substrates2011
- Author(s)
  Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, and S. Zaima
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates2011
- Author(s)
  M. Nakamura, Y. Shimura, S. Takeuchi , O. Nakatsuka, and S. Zaima
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Materials Innovation in Si Nanoelectronics2011
- Author(s)
  S. Zaima and O. Nakatsuka
- Organizer
  2011 Tsukuba Nanotechnology Symposium (TNS'11)
- Place of Presentation
  Tsukuba, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al_2O_3/Ge及びGeO_2/Geゲートスタック構造における窒素プラズマ中の光照射損傷のPAPE法による分析2011
- Author(s)
  クスマンダリ, 竹内和歌奈, 加藤公彦, 坂下満男, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Sn添加および水素熱処理がGeエピタキシャル層中の欠陥に与える影響2011
- Author(s)
  足立正樹,志村洋介,中塚理,財満鎭明
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film2011
- Author(s)
  W. Takeuchi, K. Furuta, K. Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima
- Organizer
  The 15th International Conference on Thin Films (ICTF-15)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Interfacial Properties of Al_2O_3/Ge Gate Stack Structure using Radical Nitridation Technique2011
- Author(s)
  K.Kato, S.Kyogoku, M.Sakashita, W.Takeuchi, H.Kondo, O.Nakatsuka, S.Zaima
- Organizer
  2011 International Workshop on Dielectric Thin Films for Future Electron Devices : Science and Technology
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Defect Properties in Ge Heteroepitaxial Layers by Sn Incorporation and H2-Annealing2011
- Author(s)
  M. Adachi, Y. Shimura, O. Nakatsuka, and S. Zaima
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2011)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響2011
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  東京工業大学(東京都)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effect of Chemical Bonding State on Electrical Properties of Al2O3/Ge Structure2011
- Author(s)
  K. Kato, M Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  The 15th International Conference on Thin Films (ICTF-15)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Epitaxial Growth of Ge1-xSnx for Strained Ge CMOS Devices2011
- Author(s)
  S. Zaima, Y. Shimura, S. Takeuchi, and O. Nakatsuka
- Organizer
  THERMEC' 2011 (International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec, Canada
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Improvement of Al2O3 Interfacial Properties by O2 Annealing2011
- Author(s)
  S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  7th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Potential of Ge_<1-x>Sn_x alloys as high mobility channel materials and stressors2010
- Author(s)
 Invited: S. Takeuchi, Y. Shimura, T. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Organizer
 5th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
 Sendai, Japan
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Material Assessment for uni-axial strained Ge pMOS-1 : Characterization of GeSn(B) materials2010
- Author(s)
  B.Vincent, Y.Shimura, S.Takeuchi, T.Nishimura, J.Demeulemeester, G.Eneman, T.Clarysse, W.Vandervorst, A.Vantomme, O.Nakatsuka, S.Zaima, J.Dekoster, M.Caymax, R.Loo
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Strain Relaxation Behavior of Ge_<1-x>Sn_x Layers : Toward Tensile-Strained Ge Layers with Strain Value over 1%2010
- Author(s)
 Y.Shimura, S.Takeuchi, N.Tsutsui, O.Nakatsuka, A.Sakai, S.Zaima
- Organizer
 5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
- Place of Presentation
 Stockholm, Sweden
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Control of Strain Relaxation Behavior of Ge_<1-x>Sn_x Layers for Tensile Strained Ge Layers2010
- Author(s)
 Y.Shimura, S.Takeuchi, O.Nakatsuka, S.Zaima
- Organizer
 218th ECS Meeting
- Place of Presentation
 Las Vegas, USA
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] 原子層堆積方により作製したPrAlOの結晶構造および電気的特性2010
- Author(s)
  古田和也, 竹内和歌奈, 坂下満男, 近藤博基, 中塚理, 財満鎭明
- Organizer
  シリコンテクノロジー分科会・第125回シリコンテクノロジー研究会
- Place of Presentation
  東京大学(東京都)
- Year and Date
  2010-06-22
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Crystalline Orientation Dependence of Electrical Properties on Mn Germanide/Ge(111) and (001) Schottky Contacts2010
- Author(s)
  T. Nishimura, O. Nakatsuka, S. Zaima
- Organizer
  Materials for Advanced Metallization
- Place of Presentation
  Mechelen, Belgium
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge_<1-x>Sn_xソース/ドレインストレッサーのためのNi(Ge_<1-y>Sn_y)/Ge_<1-x>Sn_x/Geコンタクト形成2010
- Author(s)
 西村剛志, 中塚理, 志村洋介, 竹内正太郎, Benjamin Vincent, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, 財満鎭明
- Organizer
 第10回日本表面科学会中部支部学術講演会
- Place of Presentation
 名古屋工業大学(愛知県)
- Year and Date
 2010-12-18
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Ge_<1-x>Sn_x stressors for strained-Ge CMOS2010
- Author(s)
 S.Takeuchi, Y.Shimura, T.Nishimura, B.Vincent, G.Eneman, T.Clarysse, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Organizer
 5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
- Place of Presentation
 Stockholm, Sweden(招待講演)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy2010
- Author(s)
  M.Adachi, M.Sakashita, H.Kondo, W.Takeuchi, O.Nakatsuka, S.Zaima
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/Ge構造の界面特性に及ぼすPr酸化膜の価数の影響2010
- Author(s)
  加藤公彦, 竹内和歌奈, 近藤博基, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Formation of Palladium Silicide Thin Layers on Si(110) Substrates2010
- Author(s)
  R.Suryana, O.Nakatsuka, S.Zaima
- Organizer
  Advanced Metallization Conference 2010 : 20th Asian Session, Tokyo, Japan, Oct.
- Place of Presentation
  The University of Tokyo, Tokyo, Japan
- Year and Date
  2010-10-21
- Data Source
  KAKENHI-PROJECT-21246009
[Presentation] Ni(Ge_<1-y>Sn_y)/Ge_<1-x>Sn_x/Geコンタクトの形成と結晶構造評価2010
- Author(s)
 西村剛志, 中塚理, 志村洋介, 竹内正太郎, Benjamin Vincent, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, 財満鎭明
- Organizer
 第71回応用物理学会学術講演会
- Place of Presentation
 長崎大学(長崎県)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Growth and Characterization of GeSn and Tensile-Strained Ge Layers for High Mobility Channels of CMOS Devices2010
- Author(s)
  O.Nakatsuka, Y.Shimura, S.Takeuchi, S.Zaima
- Organizer
  The 7th Pacific Rim International Conference on Advanced Materials and Processing
- Place of Presentation
  Cairns, Australia
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition2010
- Author(s)
  K.Furuta, W.Takeuchi, M.Sakashita, K.Kato, H.Kondo, O.Nakatsuka, S.Zaima
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Formation of Ni(Ge_<1-x>Sn_x) Layers with Solid-Phase Reaction in Ni/Ge_<1-x>Sn_x/Ge Systems2010
- Author(s)
 T.Nishimura, Y.Shimura, S.Takeuchi, B.Vincent, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Organizer
 5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
- Place of Presentation
 Stockholm, Sweden
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] (Si)GeSn requirements for optical device applications and solar cells2010
- Author(s)
  S.Takeuchi, B.Vincent, K.Temst, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 歪Ge_<1-x>Sn_xへの高濃度不純物ドーピング2010
- Author(s)
 志村洋介, 竹内正太郎, Benjamin Vincent, Geert Eneman, Trudo Clarysse, Andre Vantomme, Johan Dekoster, Matty Caymax, Roger Loo, 中塚理, 財満鎭明
- Organizer
 第71回応用物理学会学術講演会
- Place of Presentation
 長崎大学(長崎県)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Bi-axially strained Ge grown on GeSn SRBs2010
- Author(s)
  O.Nakatsuka, S.Takeuchi, Y.Shimura, A.Sakai, S.Zaima
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen2010
- Author(s)
  K.Kato, H.Kondo, M.Sakashita, O.Nakatsuka, S.Zaima
- Organizer
  5th International SiGe Technology Device Meeting 2010 (ISTDM2010)
- Place of Presentation
  Stockholm, Sweden
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GeSn : future applications and strategy2010
- Author(s)
  R.Loo, M.Caymax, B.Vincent, J.Dekoster, S.Takeuchi, O.Nakatsuka, S.Zaima, K.Temst, A.Vantomme
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors2010
- Author(s)
  K.Kato, H.Kondo, M.Sakashita, W.Takeuchi, O.Nakatsuka, S.Zaima
- Organizer
  The 1st Korea-Japan Symposium on Surface Technology
- Place of Presentation
  Incheon, Korea
- Year and Date
  2010-11-26
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 電流検出型原子間力顕微鏡を用いたPr酸化膜中の欠陥に起因するリーク電流機構の解明2010
- Author(s)
  足立正樹, 加藤雄三, 坂下満男, 近藤博基, 中塚理, 財満鎭明
- Organizer
  第10回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋工業大学(愛知県)
- Year and Date
  2010-12-18
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Assessment of Ge_<1-x>Sn_x Alloys for Strained Ge CMOS Devices2010
- Author(s)
 S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima
- Organizer
 218th ECS Meeting
- Place of Presentation
 Las Vegas, USA(招待講演)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Tensile-Strained Ge and Ge_<1-x>Sn_x Layers for High-Mobility Channels in Future CMOS Devices2010
- Author(s)
 S.Zaima, O.Nakatsuka, Y.Shimura, S.Takeuchi
- Organizer
 International Conference on Solid-state and Integrated Circuit Technology
- Place of Presentation
 Shanghai, China(招待講演)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] ラジカル窒化がGe-MOS特性に与える影響2010
- Author(s)
  竹内和歌奈, クスマンダリ, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Material Assessment for uni-axial strained Ge pMOS-2 : Formation of Ni(GeSn) Layers with Solid-Phase Reactor2010
- Author(s)
  T.Nishimura, Y.Shimura, S.Takeuchi, B.Vincent, A.Vantomme, J.Dekoster, M.Caymax, R.Loo, O.Nakatsuka, S.Zaima
- Organizer
  International Workshop of GeSn Developments and Future Applications
- Place of Presentation
  Heverlee-Leuven, Belgium
- Year and Date
  2010-05-28
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Tensile-Strained Ge and Ge_<1-x.>Sn_x Layers for High-Mobility Channels in Future CMOS Devices2010
- Author(s)
 S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi
- Organizer
 International Conference on Solid-State and Integrated Circuit Technology
- Place of Presentation
 Shanghai, China(招待講演)
- Data Source
 KAKENHI-PROJECT-22000011
[Presentation] Effect of Valence State of Pr on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure2010
- Author(s)
  K.Kato, M.Sakashita, W.Takeuchi, H.Kondo, O.Nakatsuka, S.Zaima
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Formation of Palladium Silicide on Heavily Doped Si (001) Substrates Using Ti Intermediate Layer2009
- Author(s)
  R.Suryana, O.Nakatsuka, S.Zaima
- Organizer
  Advanced Metallization Conference 2009 (ADMETA) : 19th Asian Session
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-21246009
[Presentation] Effect of Atomic Deuterium Irradiation on Initial Growth of Sn and Ge_<1-x>Sn_x on Ge(001) Substrates2009
- Author(s)
 T. Shinoda, O. Nakatsuka, and S. Zaima
- Organizer
 The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
 Los Angeles, USA
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Study on Gate Stacks in Future Nano-Scaled CMOS using Hard X-Ray Photoelectron Spectroscopy2009
- Author(s)
  Invited: S. Zaima, O. Nakatsuka, T. Hattori
- Organizer
  International Workshop for New Opportunities in Hard X-ray Photoelectron Spectroscopy
- Place of Presentation
  New York, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面上のSnおよびGe_<1-x>Sn_x初期成長に及ぼす原子状重水素照射の効果2009
- Author(s)
 篠田竜也, 中塚理, 財満鎭明
- Organizer
 第56回応用物理学関係連合講演会
- Place of Presentation
 筑波大学、筑波
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Formation and characterization of tensile-strained Ge layers on Ge_<1-X>Sn_x buffer layers2009
- Author(s)
 S.Zaima, O.Nakatsuka, Y.Shimura, N.Tsutsui, A.Sakai
- Organizer
 The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
 Los Angeles, USA((招待講演))
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Effect of Atomic Deuterium Irradiation on Initial Growth of Sn and Ge_<1-x>Sn_x on Ge(OO1) Substrates2009
- Author(s)
 T. Shinoda, O. Nakatsuka, S. Zaima
- Organizer
 The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
 Los Angeles, USA(採択決定)
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Low Temperature Growth of Ge_<1-x>Sn_x Buffer Layers for Tensile-strained Ge Layers2009
- Author(s)
 Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Organizer
 The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
 Los Angeles, USA
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing2009
- Author(s)
  T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, O. Sakata
- Organizer
  The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Influence of Interfacial Structure on Electrical Properties of Metal/Ge Schottky Contacts2009
- Author(s)
  O. Nakatsuka, S. Akimoto, T. Nishimura, and S. Zaima
- Organizer
  The 9 th International Workshop on Junction Technology 2009
- Place of Presentation
  Kyoto, Japan(採択決定)
- Data Source
  KAKENHI-PROJECT-18686005
[Presentation] Formation and characterization of tensile-strained Ge layers on Ge_<1-x>Sn_x buffer layers2009
- Author(s)
 Invited: S. Zaima, O. Nakatsuka, Y. Shimura, N. Tsutsui, A. Sakai
- Organizer
 The 6th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
 Los Angeles, USA
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面上のSnおよびGe_<1-x>Sn_x初期成長に及ぼす原子状重水素照射の効果2009
- Author(s)
 篠田竜也, 中塚理, 財満鎭明
- Organizer
 第56回応用物理学関係連合講演会
- Place of Presentation
 筑波大学
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Influence of Interfacial Structure on Electrical Properties of Metal/Ge Schottky Contacts2009
- Author(s)
  O. Nakatsuka, S. Akimoto, T. Nishimura, and S. Zaima
- Organizer
  The 9th International Workshop on Junction Technology 2009
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-18686005
[Presentation] 原子状水素照射によるGe(001)表面上SnおよびGe_<1-x>Sn_x初期成長構造の制御2008
- Author(s)
 篠田竜也, 山崎理弘, 中塚理, 財満鎭明
- Organizer
 第8回・日本表面科学会中部支部・学術講演会
- Place of Presentation
 名古屋大学
- Year and Date
 2008-12-13
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates2008
- Author(s)
  E. Toyoda, A. Sakai, O. Nakatsuka, S. Zaima, M. Ogawa, H. Isogai, T. Senda, K. Izunome, K. Omote
- Organizer
  The fourth International SiGe Technology and Device Meeting
- Place of Presentation
  HsinChu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面上のSnおよびGe_<1-x>Sn_x初期成長に及ぼす原子状水素照射の効果2008
- Author(s)
 篠田竜也, 山崎理弘, 中塚理, 財満鎭明
- Organizer
 第69回応用物理学会学術講演会
- Place of Presentation
 中部大学
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] 金属シリサイド・ジャーマナイド/半導体コンタクトの界面構造および電子物性制御(招待講演)2008
- Author(s)
  中塚理, 酒井朗, 財満鎭明
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学、名古屋
- Data Source
  KAKENHI-PROJECT-18686005
[Presentation] Characterization and analyses of interface structures in directly bonded Si(011)/Si(001) substrates2008
- Author(s)
  Invited: E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, K. Omote, S. Zaima
- Organizer
  The 5th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Hawaii, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Effect of Hydrogen on Initial Growth of Sn and Ge_<1-x>Sn_x on Ge(001) substrates2008
- Author(s)
 M. Yamazaki, O. Nakatsuka, T. Shinoda, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
 The fourth International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
 HsinChu, Taiwan
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Microstructures in Directly Bonded Si Substrates2008
- Author(s)
  A. Sakai, Y. Ohara, T. Ueda, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda
- Organizer
  The fourth International SiGe Technology and Device Meeting
- Place of Presentation
  HsinChu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] 金属シリサイド・ジャーマナイド/半導体コンタクトの界面構造および電子物性制御(招待講演)2008
- Author(s)
  中塚理, 酒井朗, 財満鎭明
- Organizer
  第69回応用物理学会学術講演会, 4p-ZB-8
- Data Source
  KAKENHI-PROJECT-18686005
[Presentation] 原子状水素照射によるGe(001)表面上SnおよびGe_<1-x>Sn_x初期成長構造の制御2008
- Author(s)
 篠田竜也, 山崎理弘, 中塚理, 財満鎭明
- Organizer
 第8回・日本表面科学会中部支部・学術講演会
- Place of Presentation
 名古屋大学、名古屋
- Year and Date
 2008-12-13
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Control of Sn Precipitation and Strain relaxation in Compositionally Step-graded Ge_<1-x>Sn_x Buffer Layers for Tensile-strained Ge Layers2008
- Author(s)
 Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima
- Organizer
 2008 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
 Tsukuba, Japan
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面上のSnおよびGe_<1-x>Sn_x初期成長に及ぼす欣子状水素照射の効果2008
- Author(s)
 篠田竜也, 山崎理弘, 中塚理, 財満鎭明
- Organizer
 第69回応用物理学会学術講演会
- Place of Presentation
 中部大学、名古屋
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge (001) Substrates2007
- Author(s)
  O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
  7th International Workshop on Junction Technology 2007
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-18686005
[Presentation] Defect Control for Ge/Si and Ge_<1-x>Sn_x/Ge/Si Heterostructures2007
- Author(s)
 Invited: A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
 Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
 Tokyo, Japan
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Tensile strained Ge layers on strain-relaxed Ge_<1-x>Sn_x/virtual Ge substrates2007
- Author(s)
 S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
 5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
 Marseille, France
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面の酸素エッチングおよび酸化過程の走査トンネル顕微鏡による観察評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Ge(001)基板上NiGe薄膜のPt添加による熱的安定性向上2007
- Author(s)
  鈴木敦之, 中塚理, 酒井朗, 小川正毅, 財満鎭明
- Organizer
  第54回応用物理学関係連合講演会, 29a-SM-5
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-18686005
[Presentation] Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会-材料・プロセス・評価の物理-」(第12回研究会)
- Place of Presentation
  三島市
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] canning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2007
- Author(s)
 M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
 Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
 Tokyo, Japan
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge_<1-x>Sn_x Layers on Ge(001) Substrates2007
- Author(s)
 M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
 Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
 Tokyo, Japan
- Data Source
 KAKENHI-PROJECT-18206005
[Presentation] Strain and dislocations in group IV semiconductor heterostructures(招待講演)2007
- Author(s)
  A.Sakai, O.Nakatsuka, M.Ogawa, and S.Zaima
- Organizer
  Materials Research Society 2007 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Ge(001)表面の酸素エッチングおよび酸化過程の走査トンネル顕微鏡による観察評価2007
- Author(s)
  山崎理弘, 若園恭伸, 酒井朗, 中塚理, 小川正毅, 財満鎭明
- Organizer
  第6回・日本表面科学会中部支部・学術講演会
- Place of Presentation
  名古屋大学
- Year and Date
  2007-04-14
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Defect Control for Ge/Si and Ge1-xSnx/Ge/Si Heterostructures (Invited)2007
- Author(s)
  A. Sakai, S. Takeuchi, O. Nakatsuka, M. Ogawa, and S. Zaima
- Organizer
  Fifth International Symposium on Control of Semiconductor Interfaces
- Place of Presentation
  Tokyo, Japan.
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Growth and Characterization of Tensile- Strained Ge Layers on Strain Relaxed Ge_<1-x>Sn_x Buffer Layers2007
- Author(s)
 Invited: O. Nakatsuka, S. Takeuchi, A. Sakai, M. Ogawa, S. Zaima
- Organizer
 The 3nd international workshop on new group IV semiconductor nanoelectronics
- Place of Presentation
 Sendai, Japan
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Strain and dislocations in group IV semiconductor heterostructures2007
- Author(s)
  Invited: A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
  Materials Research Society 2007 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-18063012
[Presentation] Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge(001) Substrates2007
- Author(s)
  O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima
- Organizer
  7th International Workshop on Junction Technology 2007, pp. 87-88
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-18686005
[Presentation] Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces2006
- Author(s)
  A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, and M. Ogawa
- Organizer
  210th Meeting of The Electrochemical Society
- Place of Presentation
  Cancun, Mexico
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Ge(001)表面の初期酸化およびエッチング過程の走査トンネル顕微鏡評価2006
- Author(s)
  若園恭伸, 山崎理弘, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明
- Organizer
  第67回応用物理学会学術講演会
- Place of Presentation
  立命館大学
- Data Source
  KAKENHI-PROJECT-18206005
[Presentation] Growth and structure evaluation of strain-relaxed Ge_<1-x>Sn_x buffer layers on virtual Ge(001) substrates2006
- Author(s)
 S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, S. Zaima
- Organizer
 The Third International SiGe Technology and Device Meeting
- Place of Presentation
 Princeton, USA
- Data Source
 KAKENHI-PROJECT-18063012
[Presentation] Poly & Epitaxial Crystallization of Silicon-tin Binary Alloys for Future Optoelectronics
- Author(s)
  M. Kurosawa, M. Kato, K. Takahashi, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima
- Organizer
  16th International Conference on Thin Films (ICTF16)
- Place of Presentation
  Croatia
- Year and Date
  2014-10-13 – 2014-10-16
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 高Sn濃度SiSnの形成とバンド構造　～直接遷移構造化を目指して～
- Author(s)
  黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会　有機エレクトロニクス研究会(OME), シリコン材料・デバイス研究会(SDM) 共催
- Place of Presentation
  大濱信泉記念館多目的ホール(沖縄)
- Year and Date
  2015-04-29 – 2015-04-30
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure
- Author(s)
  Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure クスマンダリ，竹内和歌奈，加藤公彦，柴山茂久，坂下満男，中塚理，財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Effects of Light Exposure during Plasma Process on Electrical Properties of Au/Al2O3/Ge MOS Capacitor
- Author(s)
  Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure クスマンダリ，竹内和歌奈，加藤公彦，柴山茂久，坂下満男，中塚理，財満鎭明
- Organizer
  第11回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GeO2薄膜の正方晶形成による化学的安定性の向上
- Author(s)
  柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会 ―材料・プロセス・評価の物理―」（第20回記念研究会）
- Place of Presentation
  東レ研修センター
- Year and Date
  2015-01-30 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Al2O3/Ge構造に対する熱酸化にともなうGe表面からのGe原子放出過程
- Author(s)
  柴山茂久, 中嶋薫, 坂下満男, 中塚理, 木村健二, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Low Schottky barrier height contacts with Sn electrode for various orientation n-Ge substrates
- Author(s)
  A. Suzuki, D. Yunsheng, S. Shibayama, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  Advanced Metallization Conference 2014: 24th Asian Session （ADMETA Plus 2014）
- Place of Presentation
  Tokyo
- Year and Date
  2014-10-22 – 2014-10-24
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Crystal growth of Si1-xSnx alloys with high Sn contents
- Author(s)
  M. Kurosawa, M. Kato, Y. Nagae, T. Yamaha, O. Nakatsuka and S. Zaima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Epitaxial Growth of Ge1-xSnx Thin Films by using Metal-Organic Chemical Vapor Deposition
- Author(s)
  Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] 熱電素子応用を目指したGeSn単結晶薄膜の熱物性評価
- Author(s)
  黒澤昌志, 福田雅大, 高橋恒太, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減
- Author(s)
  鈴木陽洋, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  応用物理学会薄膜・表面物理分科会、シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会 ―材料・プロセス・評価の物理―」（第20回記念研究会）
- Place of Presentation
  東レ研修センター
- Year and Date
  2015-01-30 – 2015-01-31
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Study of Local Strain Distribution in Ge1-xSnx/Ge Fine Structure by using Synchrotron X-ray
- Author(s)
  S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Belgium
- Year and Date
  2014-11-13 – 2014-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] ゲート電極の還元性がGe基板上Pr酸化膜のPr価数に与える影響
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge結晶中の格子欠陥への水素及びSn導入の影響
- Author(s)
  福留誉司、竹内和歌奈、坂下満男、田岡紀之、中塚理、財満鎭明
- Organizer
  第12回日本表面科学会中部支部学術講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Pr酸化膜/Ge構造におけるPrの価数制御に基づく界面反応制御
- Author(s)
  加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Behaviors of tin related defects in Sb doped n-type germanium
- Author(s)
  W. Takeuchi, N. Taoka, M. Sakashita, O. Nakatsuka and S. Zaima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Hydrogen Surfactant Epitaxy of Ge1-xSnx Layers
- Author(s)
  T. Asano, N. Taoka, K. Hozaki, W. Takeuchi,M. Sakashita, O. Nakatsuka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Belgium
- Year and Date
  2014-11-13 – 2014-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Development of metal/Ge contacts for engineering Schottky barriers
- Author(s)
  O. Nakatsuka, Y. Deng, A. Suzuki, S. Shibayama, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, and S. Zaima
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Belgium
- Year and Date
  2014-11-13 – 2014-11-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GGA+U法によるSi1-xSnx材料物性の精密予測
- Author(s)
  長江祐樹, 黒澤昌志, 加藤元太, 柴山茂久, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Challenges and Developments in GeSn Process Technology for Si Nanoelectronics
- Author(s)
  S. Zaima, O. Nakatsuka, N. Taoka, K. Kato, W. Takeuchi, and M. Sakashita
- Organizer
  226th ECS Meeting and SMEQ Joint International Meeting
- Place of Presentation
  Mexico
- Year and Date
  2014-10-05 – 2014-10-09
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Formation of Epitaxial NiGe Layer on Ge(001) Substrate and Influence of Interface Structure on Schottky Barrier Height
- Author(s)
  O. Nakatsuka, Y. Deng, M. Sakashita, and S. Zaima
- Organizer
  Advanced Metallization Conference 2014: 24th Asian Session （ADMETA Plus 2014）
- Place of Presentation
  Tokyo
- Year and Date
  2014-10-22 – 2014-10-24
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Electrically-Active Defects in Ge1-xSnx Epitaxtial Layer
- Author(s)
  W. Takeuchi, T. Asano, M. Sakashita, O. Nakatsuka, S. Zaima
- Organizer
  7th International Symposium on Advanced Plasma Science and Its Applications for Nitrides
- Place of Presentation
  Nagoya
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] GeSn Alloy for Nanoelectronic and Optoelectronic Devices
- Author(s)
  O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka and S. Zaima
- Organizer
  CNSE and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  Albany, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 次世代フレキシブルデバイス実現に向けた絶縁膜上GeSn薄膜の低温結晶成長
- Author(s)
  黒澤昌志, 田岡紀之、坂下満男、中塚理、宮尾正信、財満鎭明
- Organizer
  第1回結晶工学未来塾（研究ポスター発表会）
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造に対する酸素熱処理の界面特性に及ぼす効果
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 内和歌奈, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 原子状水素供給がGe1−xSnxエピタキシャル層の結晶性に及ぼす効果
- Author(s)
  藤浪俊介, 浅野孝典, 保崎航也, 小山剛史, 中塚理, 岸田英夫, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sn 誘起横方向成長法によるGe1-xSnx/SiO2構造の低温形成
- Author(s)
  黒澤昌志, 田岡紀之, 坂下満男, 中塚理　宮尾正信　財満鎭明
- Organizer
  第12回日本表面科学会中部支部学術講演会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Ge1-xSnxエピタキシャル層中の電気的活性な欠陥の挙動
- Author(s)
  竹内和歌奈, 浅野孝典, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Control of Interfacial and Electrical Properties of Metal/Pr-oxide/Ge Gate Stack Structures
- Author(s)
  K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima
- Organizer
  CNSE and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  Albany, USA
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Formation of strain-free Si1-x-yGexSny layers on Ge surfaces by using solid-liquid coexisting
- Author(s)
  M. Kato, M. Kurosawa, T. Yamaha, N. Taoka, O. Nakatsuka and S. Zaima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] リン酸溶液中レーザドーピングにおけるGe基板面方位の効果
- Author(s)
  高橋恒太, 黒澤昌志, 池上浩, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] InP基板上への超高Sn組成Ge1-xSnx層のヘテロエピタキシャル成長
- Author(s)
  中村茉里香, 志村洋介, 竹内正太郎, 中塚理, 財満鎭明
- Organizer
  第11回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Technology of Ge1-xSnx Thin Films for Future Si Nanoelectronics
- Author(s)
  O. Nakatsuka and S. Zaima
- Organizer
  The 6th Kentingan Physics Forum: International Conference on Physics and Its Applications (ICOPIA)
- Place of Presentation
  Solo, Indonesia
- Invited
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Geゲートスタック構造に対する酸素熱処理の化学結合状態および界面特性に与える効果
- Author(s)
  Al2O3/Geゲートスタック構造に対する酸素熱処理の化学結合状態および界面特性に与える効果柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第11回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] 金属/Ge界面への高Sn組成Ge1−xSnx層挿入によるショットキー障壁高さの低減
- Author(s)
  鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Photoluminescence Property of Ge1-xSnx Epitaxial Layers Grown on Ge(001) substrates
- Author(s)
  T. Asano, K. Hozaki, T. Koyama, N. Taoka, O. Nakatsuka, H. Kishida and S. Zaima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Electrical and optical properties of GeSn alloys
- Author(s)
  O. Nakatsuka, Y. Shimura, M. Adachi, M. Nakamura, and S. Zaima
- Organizer
  2nd GeSnWorkshop: GeSn Development and Future Applications
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Al2O3/Ge構造への酸素熱処理および酸素ラジカル処理による界面反応機構の解明
- Author(s)
  柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Strain measurement of Heteroepitaxial GeSn/Ge microstructures by nano-beam electron diffraction
- Author(s)
  K. Doi, K. Saitoh, N. Tanaka, S. Ike, O Nakatsuka and S. Zaima
- Organizer
  The 58th Symposium of The Japanese Society of Microscopy
- Place of Presentation
  Fukuoka
- Year and Date
  2014-11-16 – 2014-11-17
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] MBE growth and crystalline properties of GeSn heteroepitaxial layers
- Author(s)
  Y. Shimura, O. Nakatsuka, and S. Zaima
- Organizer
  2nd GeSnWorkshop: GeSn Development and Future Applications
- Place of Presentation
  Leuven, Belgium
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates
- Author(s)
  O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, W. Takeuchi, and S. Zaima
- Organizer
  226th ECS Meeting and SMEQ Joint International Meeting
- Place of Presentation
  Mexico
- Year and Date
  2014-10-05 – 2014-10-09
- Invited
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Ge1−xSnxエピタキシャル層中の欠陥の電気的特性
- Author(s)
  浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-26220605
[Presentation] Sn 添加および水素熱処理を用いたGeヘテロエピタキシャル層の電気伝導特性制御
- Author(s)
  足立正樹, 志村洋介, 中塚理, 財満鎭明
- Organizer
  第11回日本表面科学会中部支部学術講演会
- Place of Presentation
  名古屋
- Data Source
  KAKENHI-PROJECT-22000011
[Presentation] GeSn多結晶薄膜の進展〜3D-ICを目指して〜
- Author(s)
  黒澤昌志, 池上浩, 田岡紀之, 中塚理, 財満鎭明
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2015-03-11 – 2015-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-26220605

1. ZAIMA Shigeaki (70158947)

# of Collaborated Projects: 10 results

# of Collaborated Products: 535 results
2. SAKAI Akira (20314031)

# of Collaborated Projects: 6 results

# of Collaborated Products: 73 results
3. KONDO Hiroki (50345930)

# of Collaborated Projects: 4 results

# of Collaborated Products: 4 results
4. IKEDA Hiroya (00262882)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. SAKASHITA Mitsuo (30225792)

# of Collaborated Projects: 3 results

# of Collaborated Products: 132 results
6. 山本秀和 (00581141)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
7. YASUDA Yukio (60126951)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. TANAKA Nobuo (40126876)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. OGAWA Masaki (10377773)

# of Collaborated Projects: 2 results

# of Collaborated Products: 37 results
10. TAKENAKA Mitsuru (20451792)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
11. Sueoka Koji (30364095)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
12. WATANABE Heiji (90379115)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. TAKEUCHI Wakana (90569386)

# of Collaborated Projects: 1 results

# of Collaborated Products: 157 results
14. TAKAGI Shinichi (30372402)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
15. Shiraishi Kenji (20334039)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. KUROSAWA Masashi (40715439)

# of Collaborated Projects: 1 results

# of Collaborated Products: 136 results
17. 畑朋延 (50019767)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 宮崎誠一 (70190759)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 中山隆史 (70189075)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 牧原克則 (90553561)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. 初貝安弘 (80218495)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 齋藤晃 (50292280)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
24. ASANO Takanori

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
25. IKE Shiniti

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
26. INUZUKA Yuki

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
27. 加藤公彦

# of Collaborated Projects: 0 results

# of Collaborated Products: 4 results

Nakatsuka Osamu 中塚 理

NAKATSUKA Osamu 中塚 理

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Energy band design based on controlling ordered/disordered structure of non-thermal equilibrium group-IV alloy thin filmsPrincipal Investigator

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Creation of exotic low-dimensional material originated from phyllosilicate and control of its electronic propertyPrincipal Investigator

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Low Resistance Metal/Germanium Contacts by Alleviation of Fermi Level Pinning PhenomenonPrincipal Investigator

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Formation technology of ultra-flat metal/Ge contacts with low resistance for Ge electronicsPrincipal Investigator

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Nakatsuka Osamu 中塚理

NAKATSUKA Osamu 中塚理