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Miyake Hideto  三宅 秀人

… Alternative Names

MIYAKE Hideto  三宅 秀人

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Researcher Number 70209881
Other IDs
  • ORCIDhttps://orcid.org/0000-0002-1054-666X
External Links
Affiliation (Current) 2025: 三重大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help 2022 – 2025: 三重大学, 工学研究科, 教授
2015 – 2023: 三重大学, 地域イノベーション学研究科, 教授
2014: 三重大学, 大学院工学研究科, 准教授
2013 – 2014: 三重大学, 工学研究科, 准教授
2012 – 2014: 三重大学, 工学(系)研究科(研究院), 准教授 … More
2007 – 2012: Mie University, Graduate School of Engineering Electrical amd Electronic Engineesing, Associate Professor
2007: Mie University, 大学工研究科, 准教授
2006: 三重大学, 大学院工学研究科, 助教授
2006: 三重大学, 大学院工学碗究科, 助教授
1997 – 2005: 三重大学, 工学部, 助教授
2001: 三重大学, 工学部・電気電子工学科, 助教授
1993 – 1995: 三重大学, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Applied materials science/Crystal engineering / Science and Engineering
Except Principal Investigator
Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Crystal engineering / Science and Engineering / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 21:Electrical and electronic engineering and related fields … More / Basic Section 30010:Crystal engineering-related / Electronic materials/Electric materials / 電子デバイス・機器工学 / Engineering / Science and Engineering / Science and Engineering / Electronic materials/Electric materials Less
Keywords
Principal Investigator
窒化物半導体 / AlGaN / AlN / 深紫外LED / MOVPE / GaN / 貫通転位 / AIN / 窒化アルミニウム / 非極性面 … More / アニール / 高温アニール / ファセット / 選択成長 / 選択横方向成長 / 原子間力顕微鏡 / エピタキシャル成長 / カルコパイライト型半導体 / far-UVC / 結晶工学 / LED / AlNテンプレート / AlNテンプレート / フェムト秒レーザー / 分子線エピタキシー / ヘテロ成長 / ヘテロ接合 / Face-to-Face / MOVPE法 / 熱処理 / AlGaN / 界面制御 / DUV-LED / スパッタ法 / 光誘起加工 / MBE / ナノ構造 / 高速トランジスタ / In-site / selective area growth / metal-organic vapor phase epitaxy / Nitride Semiconductor / TEM観察 / その場観察 / 深紫外光源 / 多重量子井戸 / 組成変調 / 紫外光源 / 電子線励起 / ELO / 横方向成長 / 触媒作用 / ハイドライド気相エピタキシャル成長 / 紫外線発光 / ファセット制御 / EPD法 / エッチピット / 加工基板 / HVPE / ハイドライド気相成長法 / CuGaS_2 / THM法 / X線回折空間マッピング / ハロゲン輸送法 / ヨウ素輸送法 / I-III-VI_2族半導体 / 単結晶成長 / 太陽電池 / ニセレン化銅インジウム / 溶液成長 / 移動ヒ-タ法 … More
Except Principal Investigator
窒化物半導体 / GaN / 選択成長 / 窒化アルミニウム / 窒化ガリウム / AlN / 半導体物性 / 結晶工学 / AlGaN / 量子井戸 / MOVPE / エピタキシャル成長 / フォノン制御 / 励起子工学 / 励起子 / 先端機能デバイス / 格子欠陥 / 電子・電気材料 / 特異構造 / 光物性 / 回折格子 / AgGaS_2 / selective area growth / 金属 / 表面プラズモン / 結晶成長 / 紫外線発光素子 / 非極性 / 光取り出し効率 / 電子線リソグラフィ / 回折レンズ / 配光制御 / フォトニック結晶 / ナノ構造 / 発光ダイオード / 反射光モニタリング / HVPE / a面 / 転位密度 / 紫外線発光 / 電子線励起 / ヨウ素輸送法 / 二硫化銅ガリウム / カルコパイライト型半導体 / 深紫外レーザダイオード / 光学利得 / レーザ分光 / 極性制御 / CMOS / ワイドギャップ半導体 / 極性反転 / 2次元正孔ガス / 2次元電子ガス / ラマン分光 / 縦光学フォノン制御 / 電子散乱 / 発光効率 / エネルギー局在 / 深い準位 / PXRモデル / フォノン系量子干渉 / 局所フォノン場 / 励起子輻射 / フォノン輸送制御 / THz波 / 励起子ダイナミクス / 表面マイクロ構造 / 2波長ラマン分光 / フォノン輸送 / 縦光学モード / THz輻射 / 顕微ラマン分光 / 励起子ダイダイナミクス / フォノン / 局在 / 量子閉じ込め効果 / 2光子共鳴 / 誘導放出 / 非局在化 / 高温物性 / 非弾性散乱 / 低次元化 / 局在化 / 混晶半導体 / 励起子分子 / 応用光学・量子光工学 / プラズモン誘導光透過 / 極性 / プラズモン誘導透過現象 / 紫外線発光デバイス / AlGaN epitaxial growth / reactive ion etching / electron beam lithography / gratings / ultraviolet light / nano antenna / photonic crystals / III-nitride semiconductors / 電子ビームリソグラフィ / 自然形成 / 電子ビームリソグタフィ / 反射防止構造 / AlGaNエピタキシャル成長 / 反応性イオンエッチング / 紫外線 / ナノアンテナ / phosphor / photoluminescence / Rane-earth impurity / フォルトミネッセンス / 蛍光体 / 螢光体 / フォトルミネッセンス / 希土類不純物 / dry etching / AIN super lattice / epitaxial lateral overgrowth / electronic emitter / metalorganic vapor phase epitaxy / pyramid structure / gallium nitride / 有機金属気相成長法 / GaN超格子 / ドライエッチング / AlN超格子 / 横方向成長 / 電子エミッター / 有機金属帰気相成長法 / ピラミッド構造 / air-bridge structure / metal mask buried structure / Schottky junction / tungsten nitride / tungsten / 橋脚構造 / 金属埋込み構造 / ショットキー電極 / 窒化タングステン / タングステン / etching solution / THM / iodine transport method / CuGaS_2 / CuAlS_2 / epitaxial growth / I-III-VI_2 semiconductors / chalcopyrite compounds / CuAlSe_2 / X線回折空間マッピング / ハロゲン輸送法 / I-III-VI_2族半導体 / 回折空間マッピング / I‐III‐VI_2族半導体 / 鏡面エッチャント / THM法 / 二硫化銅アルミニウム / 1-III-VI_2族半導体 / 電子線励起電流 / 電子線励起深紫外レーザ / ソーラーブラインド紫外線検出器 / バルクAlN / ナノカーボン電極 / 分極半導体 / グラフェン / カーボンナノチューブ / 低加速電圧SEM / 分極電荷エンジニアリング / 電子線ホログラフィ / バルクAlN基板 / 深紫外発光素子 / ナノワイヤ / 深紫外 / 分極ドーピング / 熱処理 / ナノカーボン / 結晶成長その場観察 / 電気・電子材料 / センサー / ワイヤーグリッド偏光子 / 金属薄膜 / 化合物半導体 / 2層型ワイヤーグリッド偏光子 / 表面プラズモンセンサー / 深紫外領域 / AIN / カソードルミネッセンス / 導電性 / 選択横方向成長 / ナノボイド / 量子井戸構造 / ナノボイドエピタキシー / ファセット変調構造 / 歪み / 転位 / ファセット制御 / m面 / 渋紙 / A1GaN / InGaN / 光学フィルム / バルク単結晶 / LED照明 / 成長圧力 / a面AlGaN / a面GaN / 減圧MOVPE / 電子線照射 / 深紫外光源 / 無極性 / 反り / クラック / 貫通転位密度 / 相平衡 / 気相エピタキシャル成長 Less
  • Research Projects

    (28 results)
  • Research Products

    (1,045 results)
  • Co-Researchers

    (67 People)
  •  AlGaN系深紫外半導体レーザの発振機構解明と励起子利得による超低しきい値化

    • Principal Investigator
      山田 陽一
    • Project Period (FY)
      2025 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Yamaguchi University
  •  Crystallographic Mapping of Nonpolar Plane Growth in Nitride Semiconductors and Its Application to Far-Ultraviolet LEDsPrincipal Investigator

    • Principal Investigator
      三宅 秀人
    • Project Period (FY)
      2025 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Mie University
  •  Integrated control of optical and acoustic phonons for an inovative design of photonic and electronic devices

    • Principal Investigator
      石谷 善博
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Chiba University
  •  Non-polar growth of AlGaN nitride semiconductor and its application in deep ultraviolet LEDsPrincipal Investigator

    • Principal Investigator
      三宅 秀人
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Mie University
  •  Development of GaN CMOS Monolithic Integrated Circuits Technology Using Crystal Hetero-Polarity Control

    • Principal Investigator
      林 侑介
    • Project Period (FY)
      2022 – 2025
    • Research Category
      Fund for the Promotion of Joint International Research (Fostering Joint International Research (B))
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Osaka University
  •  Development of basic science and technology for nitride semiconductor optical devices by controlling phonon functions

    • Principal Investigator
      Ishitani Yoshihiro
    • Project Period (FY)
      2017 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Chiba University
  •  Steering Group

    • Principal Investigator
      FUJIOKA Hiroshi
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Elucidation of fundamental optical properties of biexcitons in deep ultraviolet ternary alloy quantum wells and application to laser operation

    • Principal Investigator
      Yamada Yoichi
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Yamaguchi University
  •  Creation of singularity structure by top-down method based on thermal equiburium conditionPrincipal Investigator

    • Principal Investigator
      Hideto Miyake
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Mie University
  •  International Research Support Group

    • Principal Investigator
      FUJIOKA Hiroshi
    • Project Period (FY)
      2016 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  The plasmonic extraordinary transmission phenomenon of III-nitride semiconductors and application to UV emitting devices

    • Principal Investigator
      Hiramatsu Kazumasa
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Crystal engineering
    • Research Institution
      Mie University
  •  Study on localized surface plasmon resonance on III-nitride semiconduvtors in deep-UV region

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2013 – 2014
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Mie University
  •  Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices

    • Principal Investigator
      AMANO Hiroshi
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
      Engineering
    • Research Institution
      Nagoya University
  •  Nano-void epitaxy of III-nitride semiconductors and controlling light emitting properties of deep-UV light

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Control of Deep Ultra-violet Emission and Modulation Epitaxy of Nitride Semicondusturs.Principal Investigator

    • Principal Investigator
      MIYAKE Hideto
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  High growth-rate hydride-vapor-phase of aluminum nitridePrincipal Investigator

    • Principal Investigator
      MIYAKE Hideto
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Epitaxial growth and defect controlling technique of AlGaN with high AlN molar fraction

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Mie University
  •  Study on light emitting diode for lighting controlling the luminous intensity distribution by nano-photonics structures

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2006 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Epitaxial Growth of AIGaN Using Selective Area Gmwth TechniquePrincipal Investigator

    • Principal Investigator
      MIYAKE Hideto
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Controlling of UV light by using III-nitride based photonic crystals with nano-antenna

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Luminescence and device application of GaN and AgGaS_2 doped with rare-earth impurities

    • Principal Investigator
      SHIRAKATA Sho
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Ehime University
  •  Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth Technique

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity

    • Principal Investigator
      HIRAMATSU Kazumasa
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Mie University
  •  カルコパイライト型半導体単結晶を基板に用いた同族半導体のエピタキシャル成長Principal Investigator

    • Principal Investigator
      三宅 秀人
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  移動ヒ-タ法によるカルコパイライト型半導体混晶のバルク単結晶成長と評価Principal Investigator

    • Principal Investigator
      三宅 秀人
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Mie University
  •  Epitaxial growth of I-Al-VI_2 chalcopyrite semiconductors

    • Principal Investigator
      SUGIYAMA Koichi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      MIE UNIVERSITY
  •  カルコパイライト型半導体のヨウ素輸送法気相エピタキシャル成長

    • Principal Investigator
      SUGIYAMA Koichi
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Mie University

All 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] III-nitride semiconductors and their modern devices2013

    • Author(s)
      Hideto Miyake
    • Total Pages
      619
    • Publisher
      Oxford University Press
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Book] 窒化物基板および講師整合基板の成長とデバイス特性2009

    • Author(s)
      三宅秀人、宮川鈴衣奈
    • Publisher
      (株)シーエムシー出版
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Book] 窒化物基板および格子整合基板の成長とデバイス特性2009

    • Author(s)
      三宅秀人,宮川鈴衣奈
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Book] 窒化物基板および講師整合基板の成長とデバイス特性2009

    • Author(s)
      三宅秀人、宮川鈴衣奈, 他35名
    • Publisher
      (株)シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Book] 窒化物基板および講師整合基板の成長とデバイス特性2009

    • Author(s)
      三宅秀人、宮川鈴衣奈, 他35名
    • Publisher
      (株)シーエムシー出版
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Micro-and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates2023

    • Author(s)
      Nakanishi Yudai、Hayashi Yusuke、Hamachi Takeaki、Tohei Tetsuya、Nakajima Yoshikata、Xiao Shiyu、Shojiki Kanako、Miyake Hideto、Sakai Akira
    • Journal Title

      Journal of Electronic Materials

      Volume: - Issue: 8 Pages: 5099-5108

    • DOI

      10.1007/s11664-023-10348-3

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-22K14612, KAKENHI-PROJECT-22KK0055, KAKENHI-PROJECT-21K04194, KAKENHI-PROJECT-23K23238
  • [Journal Article] Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN2022

    • Author(s)
      Shojiki Kanako、Shimokawa Moe、Iwayama Sho、Omori Tomoya、Teramura Shohei、Yamaguchi Akihiro、Iwaya Motoaki、Takeuchi Tetsuya、Kamiyama Satoshi、Miyake Hideto
    • Journal Title

      Applied Physics Express

      Volume: 15 Issue: 5 Pages: 051004-051004

    • DOI

      10.35848/1882-0786/ac6567

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-22K14612, KAKENHI-PROJECT-23K23238
  • [Journal Article] Thermal radiation resonating with longitudinal optical phonon from surface micro-stripe structures on metal-gallium nitride and sapphire2022

    • Author(s)
      Lin Bojin、Aye Hnin Lai Lai、Imae Yuto、Hayashi Kotaro、Orito Haruki、Ma Bei、Kuboya Shigeyuki、Miyake Hideto、Ishitani Yoshihiro
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 147 Pages: 106726-106726

    • DOI

      10.1016/j.mssp.2022.106726

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Journal Article] 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities2022

    • Author(s)
      Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Shiyu Xiao, Takao Nakamura, Masataka Kubo, Hideto Miyake
    • Journal Title

      Applied Physics Express

      Volume: 15 Issue: 5 Pages: 055501-055501

    • DOI

      10.35848/1882-0786/ac66c2

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-21K04903, KAKENHI-PROJECT-21K14545, KAKENHI-PROJECT-22K14612, KAKENHI-PROJECT-23K23238
  • [Journal Article] Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning2022

    • Author(s)
      Zhang Zexuan、Hayashi Yusuke、Tohei Tetsuya、Sakai Akira、Protasenko Vladimir、Singhal Jashan、Miyake Hideto、Xing Huili Grace、Jena Debdeep、Cho YongJin
    • Journal Title

      Science Advances

      Volume: 8 Issue: 36

    • DOI

      10.1126/sciadv.abo6408

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Journal Article] High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light‐emitting diodes2021

    • Author(s)
      D Wang, K Uesugi, S Xiao, K Norimatsu, H Miyake
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 3 Pages: 035505-035505

    • DOI

      10.35848/1882-0786/abe522

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020

    • Author(s)
      D. Uehara, M. Kikuchi, B. Ma, H. Miyake, Y. Ishitani
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 6 Pages: 061003-061003

    • DOI

      10.35848/1882-0786/ab8c1c

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06425
  • [Journal Article] Charge transfer processes related to deep levels in free standing n-GaN layer analyzed by above and sub-bandgap energy excitation2020

    • Author(s)
      Daisuke Uehara, Moe Kikuchi, Bei Ma, Hideto Miyake, Yoshihiro Ishitani
    • Journal Title

      Applied Physics Express

      Volume: Undecided

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Journal Article] Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire2020

    • Author(s)
      K. Sato, S. Yasue, K. Yamada, S. Tanaka, T. Omori, S. Ishizuka, S. Teramura, Y. Ogino, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 3 Pages: 031004-031004

    • DOI

      10.35848/1882-0786/ab7711

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416
  • [Journal Article] Individually resolved luminescence from closely stacked GaN/AlN quantum wells2020

    • Author(s)
      Bowen Sheng, Gordon Schmidt, Frank Bertram, Peter Veit, Yixin Wang, Tao Wang, Xin Rong, Zhaoying Chen, Ping Wang, Jurgen Blasing, Hideto Miyake, Hongwei Li, Shiping Guo, Zhixin Qin, Andre Strittmatter, Bo Shen, Jurgen Christen, Xinqiang Wang
    • Journal Title

      Photonics Research

      Volume: 8 Issue: 4 Pages: 610-615

    • DOI

      10.1364/prj.384508

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template2020

    • Author(s)
      Uesugi Kenjiro、Shojiki Kanako、Tezen Yuta、Hayashi Yusuke、Miyake Hideto
    • Journal Title

      Applied Physics Letters

      Volume: 116 Issue: 6 Pages: 062101-062101

    • DOI

      10.1063/1.5141825

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15045, KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-19K15025
  • [Journal Article] MOVPE growth of AlN films on nano-patterned sapphire substrates with annealed sputtered AlN2020

    • Author(s)
      Y. Iba, K. Shojiki, K. Uesugi, S. Xiao, H. Miyake
    • Journal Title

      Journal of Crystal Growth

      Volume: 532 Pages: 125397-125397

    • DOI

      10.1016/j.jcrysgro.2019.125397

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers2020

    • Author(s)
      S. Tanaka, Y. Kawase, S. Teramura, S. Iwayama, K. Sato, S. Yasue, T. Omori, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 4 Pages: 045504-045504

    • DOI

      10.35848/1882-0786/ab7caf

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing2020

    • Author(s)
      S. Teramura, Y. Kawase, Y. Sakuragi, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake
    • Journal Title

      physica status solidi (a)

      Volume: 217 Issue: 14 Pages: 1900868-1900868

    • DOI

      10.1002/pssa.201900868

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams2020

    • Author(s)
      Akira Uedono, Kanako Shojiki, Kenjiro Uesugi, Shigefusa F Chichibu, Shoji Ishibashi, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Hideto Miyake
    • Journal Title

      J. Appl. Phys.

      Volume: 128 Issue: 8 Pages: 085704-085704

    • DOI

      10.1063/5.0015225

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15025, KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06424, KAKENHI-PLANNED-16H06427
  • [Journal Article] Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer2020

    • Author(s)
      S. Kuboya, K. Uesugi, K. Shojiki, Y. Tezen, N. Norimatsu, and H. Miyake
    • Journal Title

      J. Cryst. Growth

      Volume: 545 Pages: 125722-125722

    • DOI

      10.1016/j.jcrysgro.2020.125722

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K15025, KAKENHI-PLANNED-16H06415
  • [Journal Article] High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire2020

    • Author(s)
      Kanako Shojiki , Kenjiro Uesugi , Shigeyuki Kuboya , Takafumi Inamori , Shin Kawabata , Hideto Miyake
    • Journal Title

      physica status solidi (b)

      Volume: 2020 Issue: 2 Pages: 2000352-2000352

    • DOI

      10.1002/pssb.202000352

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K15025, KAKENHI-PLANNED-16H06415
  • [Journal Article] Internal loss of AlGaN-based ultraviolet-B band lasr diodes with p-type AlGaN cladding layer using polarization doping2020

    • Author(s)
      T. Omori, S. Ishizuka, S. Tanaka, S. Yasue, K. Sato, Y. Ogino, S. Teramura, K. Yamada, S. Iwayama, H. Miyake, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 7 Pages: 071008-071008

    • DOI

      10.35848/1882-0786/ab9e4a

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416
  • [Journal Article] AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substrates2020

    • Author(s)
      H. Fujikura, T. Konno, T. Kimura, H. Miyake
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 2 Pages: 025506-025506

    • DOI

      10.7567/1882-0786/ab65a0

    • NAID

      210000157939

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Low dislocation density AlN on sapphire prepared by double sputtering and annealing2020

    • Author(s)
      D. Wang, K. Uesugi, S. Xiao, K. Norimatsu, H. Miyake
    • Journal Title

      Applied Physics Express

      Volume: 13 Issue: 9 Pages: 095501-095501

    • DOI

      10.35848/1882-0786/ababec

    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure2020

    • Author(s)
      I Abid, R Kabouche, F Medjdoub, S Besendorfer, E Meissner, J Derluyn, S Degroote, M Germain, H Miyake
    • Journal Title

      2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

      Volume: - Pages: 310-312

    • DOI

      10.1109/ispsd46842.2020.9170170

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K2020

    • Author(s)
      S. Miasojedovas, P. Scajev, K. Jarasiunas, B. Gil, H. Miyake
    • Journal Title

      Physical Review B

      Volume: 102 Issue: 3 Pages: 035201-035201

    • DOI

      10.1103/physrevb.102.035201

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells2019

    • Author(s)
      K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, H. Miyake
    • Journal Title

      AIP Advances

      Volume: 9 Issue: 12 Pages: 125342-125342

    • DOI

      10.1063/1.5125799

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06426, KAKENHI-PROJECT-15H05732, KAKENHI-PROJECT-19H02615
  • [Journal Article] Ultraviolet-B band lasers fabricated on highly relaxed thick Al0. 55Ga0. 45N films grown on various types of AlN wafers2019

    • Author(s)
      Y. Kawase, S. Ikeda, Y. Sakuragi, S. Yasue, S. Iwayama, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Miyake
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SC1052-SC1052

    • DOI

      10.7567/1347-4065/ab0d04

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing2019

    • Author(s)
      SH. Lee, H. Jeong, OF. NgomeOkello, S. Xiao, S. Moon, D. Kim, GY. Kim, JL. Lo, YC. Peng, BM. Cheng, H. Miyake, SY. Choi, JK. Kim
    • Journal Title

      Scientific reports

      Volume: 9 Issue: 1 Pages: 1-8

    • DOI

      10.1038/s41598-019-47093-9

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt2019

    • Author(s)
      Y. Wang, X. Rong, S. Ivanov, V. Jmerik, Z. Chen, H. Wang, T. Wang, P. Wang, P. Jin, Y. Chen, V. Kozlovsky, D. Sviridov, M. Zverev, E. Zhdanova, N. Gamov, V. Studenov, H. Miyake, H. Li, S. Guo, X. Yang, F. Xu, T. Yu, Z. Qin, W. Ge, B. Shen, X. Wang
    • Journal Title

      Advanced Optical Materials

      Volume: 7 Issue: 10 Pages: 1801763-1801763

    • DOI

      10.1002/adom.201801763

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Enzymatic and molecular characterization of an endoglucanase E from Clostridium cellulovorans 743B2019

    • Author(s)
      R. Kozaki, H. Miyake
    • Journal Title

      JOURNAL OF BIOSCIENCE AND BIOENGINEERING

      Volume: 128 Issue: 4 Pages: 398-404

    • DOI

      10.1016/j.jbiosc.2019.03.013

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN2019

    • Author(s)
      K. Nagamatsu, X. Liu, K. Uesugi, H. Miyake
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SCCC07-SCCC07

    • DOI

      10.7567/1347-4065/ab07a1

    • NAID

      210000155885

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Statistics of excitonic energy states based on phononic-excitonic-radiative model2019

    • Author(s)
      Yoshihiro Ishitani, kensuke Oki, and Hideto Miyake
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 未定 Issue: SC Pages: SCCB34-SCCB34

    • DOI

      10.7567/1347-4065/ab09e2

    • NAID

      210000156204

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06425, KAKENHI-PROJECT-17H02772, KAKENHI-PLANNED-16H06415
  • [Journal Article] Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing2019

    • Author(s)
      Y. Hayashi, K. Tanigawa, K. Uesugi, K. Shojiki, H. Miyake
    • Journal Title

      Journal of Crystal Growth

      Volume: 512 Pages: 131-135

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Journal Article] Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film2019

    • Author(s)
      S. Tanaka, K. Shojiki, K. Uesugi, Y. Hayashi, H. Miyake
    • Journal Title

      Journal of Crystal Growth

      Volume: 512 Pages: 16-19

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Journal Article] Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing2019

    • Author(s)
      K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, K. Nagamatsu, H. Yoshida, H. Miyake
    • Journal Title

      Journal of Crystal Growth

      Volume: 510 Pages: 13-17

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Journal Article] Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures2019

    • Author(s)
      K. Uesugi, Y. Hayashi, K. Shojiki, H. Miyake
    • Journal Title

      Applied Physics Express

      Volume: 12 Issue: 6 Pages: 065501-065501

    • DOI

      10.7567/1882-0786/ab1ab8

    • NAID

      210000155786

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] A Simple Analysis Method for 4-Deoxy-l-erythro-5-hexoseulose Uronic Acid by HPLC-ELSD with Column for Anion Analysis2019

    • Author(s)
      T. Shibata, R. Fujii, Y. Nishioka, H. Miyake, T. Mori, R. Tanaka
    • Journal Title

      NATURAL PRODUCT COMMUNICATIONS

      Volume: 14 Issue: 5

    • DOI

      10.1177/1934578x19850990

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-17K00852
  • [Journal Article] Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy2019

    • Author(s)
      S. Xiao, N. Jiang, K. Shojiki, K. Uesugi, H. Miyake
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SC1003-SC1003

    • DOI

      10.7567/1347-4065/ab0ad4

    • NAID

      210000155762

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate2019

    • Author(s)
      Shirato Tatsuya、Hayashi Yusuke、Uesugi Kenjiro、Shojiki Kanako、Miyake Hideto
    • Journal Title

      physica status solidi (b)

      Volume: 257 Issue: 2 Pages: 1900447-1900447

    • DOI

      10.1002/pssb.201900447

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15045, KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-19K15025
  • [Journal Article] Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy2019

    • Author(s)
      K. Shojiki, Y. Hayashi, K. Uesugi, H. Miyake
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SCCB17-SCCB17

    • DOI

      10.7567/1347-4065/ab0d07

    • NAID

      210000155954

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing2019

    • Author(s)
      K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, K. Nagamatsu, H. Yoshida, H. Miyake
    • Journal Title

      Journal of Crystal Growth

      Volume: 510 Pages: 13-17

    • DOI

      10.1016/j.jcrysgro.2019.01.011

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Structural analysis of polarity inversion boundary in sputtered AlN films annealed under high temperatures2019

    • Author(s)
      T. Akiyma, M. Uchino, K. Nakamura, T. Ito, S. Xiao, H. Miyake
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SC Pages: SCCB30-SCCB30

    • DOI

      10.7567/1347-4065/ab0d01

    • NAID

      210000156121

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-17K05056
  • [Journal Article] Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film2019

    • Author(s)
      S. Tanaka, K. Shojiki, K. Uesugi, Y. Hayashi, H. Miyake
    • Journal Title

      Journal of Crystal Growth

      Volume: 512 Pages: 16-19

    • DOI

      10.1016/j.jcrysgro.2019.02.001

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire2018

    • Author(s)
      Susilo, N; Hagedorn, S; Jaeger, D; Miyake, H; Zeimer, U; Reich, C; Neuschulz, B; Sulmoni, L; Guttmann, M; Mehnke, F; Kuhn, C; Wernicke, T; Weyers, M; Kneissl, M
    • Journal Title

      APPLIED PHYSICS LETTERS

      Volume: 112 Issue: 4 Pages: 41110-41110

    • DOI

      10.1063/1.5010265

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction2018

    • Author(s)
      Shida K.、Takeuchi S.、Tohei T.、Miyake H.、Hiramatsu K.、Sumitani K.、Imai Y.、Kimura S.、Sakai A.
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 16 Pages: 161563-161563

    • DOI

      10.1063/1.5011291

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06423, KAKENHI-PLANNED-25106003, KAKENHI-PLANNED-16H06415
  • [Journal Article] Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy2018

    • Author(s)
      Yoshizawa, R; Miyake, H; Hiramatsu, K
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: 57 Issue: 1S Pages: 01AD05-01AD05

    • DOI

      10.7567/jjap.57.01ad05

    • NAID

      210000148548

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15H03556
  • [Journal Article] Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells2018

    • Author(s)
      S. Kurai, N. Imura, L. Jin, H. Miyake, K. Hiramatsu, Y. Yamada
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 6 Pages: 60311-60311

    • DOI

      10.7567/jjap.57.060311

    • NAID

      210000149104

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335, KAKENHI-PROJECT-16K06264
  • [Journal Article] Temperature dependence of excitonic transitions in Al0. 60Ga0. 40N/Al0. 70Ga0. 30N multiple quantum wells from 4 to 750 K2018

    • Author(s)
      H. Murotani, Y. Hayakawa, K. Ikeda, H. Miyake, K. Hiramtsu, Y. Yamada
    • Journal Title

      Journal of Applied Physics

      Volume: 123 Issue: 20 Pages: 205705-205705

    • DOI

      10.1063/1.5023996

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335
  • [Journal Article] Growth of High-Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High-Temperature Annealing2018

    • Author(s)
      Junya Hakamata, Yuta Kawase, Lin Dong, Sho Iwayama, Motoaki Iwaya,
    • Journal Title

      Phys. Status Solidi B

      Volume: 1700506 Issue: 5 Pages: 1700506-1700506

    • DOI

      10.1002/pssb.201700506

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H02019, KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06416
  • [Journal Article] Polarity inversion of aluminum nitride by direct wafer bonding2018

    • Author(s)
      Hayashi, Y; Katayama, R; Akiyama, T; Ito, T; Miyake, H
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 11 Issue: 3 Pages: 31003-31003

    • DOI

      10.7567/apex.11.031003

    • NAID

      210000136117

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-17K19078, KAKENHI-PUBLICLY-17H05335, KAKENHI-PROJECT-17H06762
  • [Journal Article] Temperature dependence of Stokes shifts of excitons and biexcitons in Al0.61Ga0.39N epitaxial layer2018

    • Author(s)
      H. Murotani, K. Ikeda, T. Tsurumaru, R. Fujiwara, S. Kurai, H. Miyake, K. Hiramatsu, and Y. Yamada
    • Journal Title

      Physica Status Solidi B

      Volume: - Issue: 5 Pages: 1700374-1700374

    • DOI

      10.1002/pssb.201700374

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335, KAKENHI-PLANNED-16H06415
  • [Journal Article] Improvement mechanism of sputtered AlN films by high-temperature annealing2018

    • Author(s)
      S. Xiao, R. Suzuki, H. Miyake, S. Harada, T. Ujihara
    • Journal Title

      Journal of Crystal Growth

      Volume: 502 Pages: 41-44

    • DOI

      10.1016/j.jcrysgro.2018.09.002

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells2017

    • Author(s)
      H. Murotani, K. Nakamura, T. Fukuno, H. Miyake, K. Hiramatsu, and Y. Yamada
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 2 Pages: 21002-21002

    • DOI

      10.7567/apex.10.021002

    • NAID

      210000135746

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335, KAKENHI-PLANNED-16H06415
  • [Journal Article] A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high AlN mole fraction AlxGa1-xN multiple quantum wells2017

    • Author(s)
      K. Kojima, K. Furusawa, Y. Yamazaki, H. Miyake, K. Hiramatsu, and S. F. Chichibu
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 1 Pages: 0158021-4

    • DOI

      10.7567/apex.10.015802

    • NAID

      210000135740

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-16H06427, KAKENHI-PROJECT-26706003, KAKENHI-PLANNED-16H06415
  • [Journal Article] High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes2017

    • Author(s)
      Huang, CY; Wu, PY; Chang, KS; Lin, YH; Peng, WC; Chang, YY; Li, JP; Yen, HW; Wu, YS; Miyake, H; Kuo, HC
    • Journal Title

      AIP ADVANCES

      Volume: 7 Issue: 5 Pages: 55110-55110

    • DOI

      10.1063/1.4983708

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure2017

    • Author(s)
      Atsushi Motogaito, Tomoyasu Nakajima, Hideto Miyake and Hiramatsu Kazumasa
    • Journal Title

      Applied Physics A

      Volume: 123 Issue: 12 Pages: 729-729

    • DOI

      10.1007/s00339-017-1367-6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Journal Article] Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns2017

    • Author(s)
      Okada, S; Iwai, H; Miyake, H; Hiramatsu, K
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: 56 Issue: 12 Pages: 125504-125504

    • DOI

      10.7567/jjap.56.125504

    • NAID

      210000148460

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15H03556
  • [Journal Article] Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells2017

    • Author(s)
      Nakamura, K; Fukuno, T; Miyake, H; Hiramatsu, K; Yamada, Y
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 10 Issue: 5 Pages: 51003-51003

    • DOI

      10.7567/apex.10.051003

    • NAID

      210000135831

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PLANNED-16H06428, KAKENHI-PROJECT-16H04335
  • [Journal Article] Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates2017

    • Author(s)
      S. Okada, H. Iwai, H. Miyake, K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 印刷中 Pages: 851-855

    • DOI

      10.1016/j.jcrysgro.2016.12.011

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PLANNED-16H06418, KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-15H03556
  • [Journal Article] Study on the influence of different trench-patterned templates on the crystalline microstructure of AIN epitaxial films by X-ray microdiffraction2017

    • Author(s)
      Khan, DT; Takeuchi, S; Nakamura, Y; Nakamura, K; Arauchi, T; Miyake, H; Hiramatsu, K; Imai, Y; Kimura, S; Sakai, A
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: 56 Issue: 2 Pages: 25502-25502

    • DOI

      10.7567/jjap.56.025502

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Surface thermal stability of free-standing GaN substrates2016

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O Eryu and T. Hasegawa
    • Journal Title

      Japanese Journal Applied Physics

      Volume: 55 Issue: 1S Pages: 01AC08-01AC08

    • DOI

      10.7567/jjap.55.01ac08

    • NAID

      210000145956

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-16H06415
  • [Journal Article] Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique2016

    • Author(s)
      S. Kamada, S. Takeuchi, D. T. Khan, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, A. Sakai
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 11 Pages: 111001-111001

    • DOI

      10.7567/apex.9.111001

    • NAID

      210000138078

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06423, KAKENHI-PLANNED-16H06415
  • [Journal Article] Detecting High-Refractive-Index Media Using Surface Plasmon Sensor with One-Dimensional Metal Diffraction Grating2016

    • Author(s)
      Atsushi Motogaito, Shinya Mito, Hideto Miyake, Kazumasa Hiramatsu
    • Journal Title

      Optics and Photonics Journal

      Volume: 6 Issue: 07 Pages: 164-170

    • DOI

      10.4236/opj.2016.67018

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PROJECT-26390082
  • [Journal Article] Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions2016

    • Author(s)
      Chia-Hung Lin, Yasuhiro Yamashita, Hideto Miyakea, Kazumasa Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 印刷中 Pages: 845-850

    • DOI

      10.1016/j.jcrysgro.2016.09.076

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PLANNED-16H06415
  • [Journal Article] Annealing of an AlN buffer layer in N-2-CO for growth of a high-quality AlN film on sapphire2016

    • Author(s)
      H. Miyake, G. Nisho, S. Suzuki, K. Hiramatsu, H. Fukuyama, J. Kuar and N. Kuwano
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 2 Pages: 025501-025501

    • DOI

      10.7567/apex.9.025501

    • NAID

      210000137795

    • Peer Reviewed / Acknowledgement Compliant / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-16H06415
  • [Journal Article] Electron microscopy analysis of microstructure of postannealed aluminum nitride template2016

    • Author(s)
      Kaur, J; Kuwano, N; Jamaludin, KR; Mitsuhara, M; Saito, H; Hata, S; Suzuki, S; Miyake, H; Hiramatsu, K; Fukuyama, H
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 9 Issue: 6 Pages: 65502-65502

    • DOI

      10.7567/apex.9.065502

    • NAID

      210000137952

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Journal Article] Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN2016

    • Author(s)
      Chia-Hung Lin, Daiki Yasui, Shinya Tamaki, Hideto Miyake and Kazumasa Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FA12-05FA12

    • DOI

      10.7567/jjap.55.05fa12

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PLANNED-16H06415
  • [Journal Article] Impact of high-temperature annealing of AlN layer onsapphire and its thremodynamic principle2016

    • Author(s)
      Hiroyuki Fukuyama, Hideto Miyake, Gou Nishio, Shuhei Suzuki and Kazumasa Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 5S Pages: 05FL02-05FL02

    • DOI

      10.7567/jjap.55.05fl02

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-16H06415
  • [Journal Article] Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-μm-thick a-plane AlN films grown on r-plane sapphire substrates2016

    • Author(s)
      Chia-Hung Lin, Shinya Tamaki, Yasuhiro Yamashita, Hideto Miyake and Kazumasa Hiramatsu
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 8 Pages: 081001-081001

    • DOI

      10.7567/apex.9.081001

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556, KAKENHI-PLANNED-16H06415
  • [Journal Article] Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations2016

    • Author(s)
      Satoshi Kurai, Hideto Miyake, Kazumasa Hiramatsu, and Yoichi Yamada
    • Journal Title

      Journal of Applied Physics

      Volume: 119 Issue: 2 Pages: 25-707

    • DOI

      10.1063/1.4939864

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25420288, KAKENHI-PROJECT-25420289, KAKENHI-PROJECT-25000011, KAKENHI-PLANNED-16H06415
  • [Journal Article] Excitation and de-excitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states2016

    • Author(s)
      Yoshihiro Ishitani, Kazuma Takeuchi, Naoyuki Oizumi, Hironori Sakamoto, Bei Ma, and Ken Morita, Hideto Miyake, and Kazumasa Hiramatsu
    • Journal Title

      Journal of Physics D

      Volume: 49 Issue: 24 Pages: 245102-245102

    • DOI

      10.1088/0022-3727/49/24/245102

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25286048, KAKENHI-PROJECT-16K17511, KAKENHI-PLANNED-16H06415
  • [Journal Article] Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing2016

    • Author(s)
      H. Miyake, C.-H. Lin, K. Tokoro, K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 456 Pages: 155-159

    • DOI

      10.1016/j.jcrysgro.2016.08.028

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06418, KAKENHI-PROJECT-15H03556, KAKENHI-PLANNED-16H06415
  • [Journal Article] Excitation-dependent carrier dynamics in Al-rich AlGaN layers and multiple quantum wells2015

    • Author(s)
      P. Scajev, S. Miasojedovas, K. Jarasiunas, K. Hiramatsu, H. Miyake, B. Gil
    • Journal Title

      PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

      Volume: 252 Issue: 5 Pages: 1043-1049

    • DOI

      10.1002/pssb.201451479

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Journal Article] Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer2015

    • Author(s)
      A. Motogaito, Y. Morishita, H. Miyake and K. Hiramatsu
    • Journal Title

      Plasmonics

      Volume: 10 Issue: 6 Pages: 1657-1662

    • DOI

      10.1007/s11468-015-9980-8

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082, KAKENHI-PROJECT-15H03556
  • [Journal Article] Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application2015

    • Author(s)
      A. Motogaito, M. Kito, H. Miyake and K. Hiramatsu
    • Journal Title

      Proc.of SPIE Micro+Nano Materials, Devices, and Systems

      Volume: 9668 Pages: 96681Q-96681Q

    • DOI

      10.1117/12.2201116

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26390082, KAKENHI-PROJECT-15H03556
  • [Journal Article] Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template2015

    • Author(s)
      D.Khan, S.Takeuchi, Y.Nakamura, K.Nakamura, T.Arauchi, H.Miyake, K.Hiramatsu, Y.Imai, S.Kimura, A.Sakai
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 411 Pages: 38-41

    • DOI

      10.1016/j.jcrysgro.2014.10.052

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction Al_xGa_<1-x>N multiple quantum wells2015

    • Author(s)
      S. F. Chichibu, H. Miyake, Y. Ishikawa, K. Furusawa, K. Hiramatsu
    • Journal Title

      APPLIED PHYSICS LETTERS

      Volume: 107 Issue: 12 Pages: 121-602

    • DOI

      10.1063/1.4931754

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Journal Article] Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media2015

    • Author(s)
      A. Motogaito, S. Nakamura, J. Miyazaki, H. Miyake and K. Hiramatsu
    • Journal Title

      Optics Communications

      Volume: 341 Pages: 64-68

    • DOI

      10.1016/j.optcom.2014.12.006

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25600090, KAKENHI-PROJECT-26390082
  • [Journal Article] MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer2014

    • Author(s)
      M. Katagiri, H. Fang, H. Miyake, K. Hiramatsu, H. Oku, H. Asanuma and K. Kawamura
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL09-05FL09

    • DOI

      10.7567/jjap.53.05fl09

    • NAID

      210000143869

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-25600090
  • [Journal Article] Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures2014

    • Author(s)
      P.Lefebvre, C. Brimont, P.Valvin, B. Gil, H.Miyake, K.Hiramatsu
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 211 Issue: 4 Pages: 765-768

    • DOI

      10.1002/pssa.201300505

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] High quality GaN grown by using maskless epitaxial lateral overgrowthon Si substrate with thin SiC intermediate layer2014

    • Author(s)
      H Fang, M Katagiri, H Miyake, K Hiramatsu, H Oku, H Asamura, and K Kawamura
    • Journal Title

      Pbysica status solidi (a)

      Volume: (印刷中) Issue: 4 Pages: 744-747

    • DOI

      10.1002/pssa.201300443

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01357, KAKENHI-PROJECT-24360008
  • [Journal Article] Selective-area growth of GaN on non- and semi-polar bulk GaN substrates2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, Y. Enatsu and S. Nagao
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL04-05FL04

    • DOI

      10.7567/jjap.53.05fl04

    • NAID

      210000143864

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1-xN/AlyGa1-yN multiple quantum well structures (x=0.6) and its relationship with internal quantum efficiency2014

    • Author(s)
      S.Kurai, K.Anai, H.Miyake, K.Hiramatsu, Y.Yamada
    • Journal Title

      JOURNAL OF APPLIED PHYSICS

      Volume: 116 Issue: 23 Pages: 235703-235703

    • DOI

      10.1063/1.4904847

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420288, KAKENHI-PROJECT-25420289
  • [Journal Article] High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy2014

    • Author(s)
      S. Kitagawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 53 Issue: 5S1 Pages: 05FL03-05FL03

    • DOI

      10.7567/jjap.53.05fl03

    • NAID

      210000143863

    • Peer Reviewed / Acknowledgement Compliant / Open Access
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25600090
  • [Journal Article] Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants ― With results for AlN optical constants2014

    • Author(s)
      T.Saito, K.Ozaki, K.Fukui,H.Iwai,K.Yamamoto,H.Miyake, K.Hiramatsu
    • Journal Title

      Thin Solid Films

      Volume: 559 Pages: 517-521

    • DOI

      10.1016/j.tsf.2014.02.099

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23560006, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25410006
  • [Journal Article] Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular-striped AlN/sapphire template2014

    • Author(s)
      T.Arauchi, S.Takeuchi, K.Nakamura, K.Dinh, Y.Nakamura, H.Miyake, K.Hiramatsu, A. Sakai
    • Journal Title

      PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

      Volume: 211 Issue: 4 Pages: 731-735

    • DOI

      10.1002/pssa.201300461

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Effect of SiC Intermediate Layer Properties in Epitaxy of GaN on 3C-SiC/Si Substrates2014

    • Author(s)
      H Fang, M Katagiri, H Miyake, K Hiramatsu, H Oku, H Asamura, and K Kawamura
    • Journal Title

      Joumal of Applied Physics

      Volume: 115 Issue: 6

    • DOI

      10.1063/1.4864780

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01357, KAKENHI-PROJECT-24360008
  • [Journal Article] Binding energy of localized biexcitons in AlGaN-based quantum wells2014

    • Author(s)
      Y.Hayakawa, T.Fukuno, K.Nakamura, H.Miyake, K.Hiramatsu, Y.Yamada
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 7 Issue: 12 Pages: 122101-122101

    • DOI

      10.7567/apex.7.122101

    • NAID

      210000137325

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420289
  • [Journal Article] Selective Area Growth of Semipolar (20-21) and (20-2-1) GaN substrates by Metalorganic Vapor Phase Epitaxy2013

    • Author(s)
      Daiki Jinno, Bei Ma, Hideto Miyake, Kazumasa Hiramatsu, Yuuki Enatsu, and Satoru Nagao
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JC06-08JC06

    • DOI

      10.7567/jjap.52.08jc06

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Journal Article] Study on the Chemical Sensor Using Excitation of the Surface Plasmon Polariton with the GaP-Au Contact2013

    • Author(s)
      Shohei Nakamura,Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Journal Title

      Proc. JSAP-OSA Symposia 2013

      Volume: なし

    • Data Source
      KAKENHI-PROJECT-25600090
  • [Journal Article] Effects of Si doping in high-quality AIN grown by MOVPE on trench-patterned template2013

    • Author(s)
      G. Nishio, Y. Shibo, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 370 Pages: 74-77

    • DOI

      10.1016/j.jcrysgro.2012.10.038

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources2013

    • Author(s)
      F. Fukuyo, S. Ochiai, H. Miyake, K. Hiramatsu, H. Yoshida and Y. Kobayashi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 1S Pages: 01AF03-01AF03

    • DOI

      10.7567/jjap.52.01af03

    • NAID

      210000141776

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011
  • [Journal Article] Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy2013

    • Author(s)
      S. F. Chichibu, H. Miyake, Y. Ishikawa, M. Tashiro, T. Ohtomo, K. Furusawa, K. Hazu,K. Hiramatsu, A. Uedono
    • Journal Title

      Journal of Applied Physics

      Volume: 113 Issue: 21 Pages: 2135061-6

    • DOI

      10.1063/1.4807906

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22246037, KAKENHI-PROJECT-24560010
  • [Journal Article] The Excitation of the Surface Plasmon Polariton with the GaP-Au Contact and Application to Chemical Sensors2013

    • Author(s)
      S. Nakamura, A. Motogaito, H. Miyake, and K. Hiramatsu
    • Journal Title

      Technical digest on 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

      Volume: なし

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Journal Article] Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy2013

    • Author(s)
      S. Kurai, F. Ushijima, Y. Yamada, H. Miyake, K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JL07-08JL07

    • DOI

      10.7567/jjap.52.08jl07

    • NAID

      210000142732

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420288
  • [Journal Article] Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration2013

    • Author(s)
      S. Kurai, F. Ushijima, H. Miyake, K. Hiramatsu, Y. Yamada
    • Journal Title

      Journal of Applied Physics

      Volume: 115 Issue: 5 Pages: 53509-53509

    • DOI

      10.1063/1.4864020

    • NAID

      120006364143

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25420288, KAKENHI-PROJECT-25420289
  • [Journal Article] Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources2013

    • Author(s)
      Fumitsugu Fukuyo, Shunsuke Ochiai, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, and Yuji Kobayashi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52

    • NAID

      210000141776

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Journal Article] AlN Grown on a- and n-Plane Sapphire Substrates:by Low-Pressure Hydride Vapor Phase Epitaxy2013

    • Author(s)
      Naoki Goriki, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito, and Osamu Eryu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 8S Pages: 08JB31-08JB31

    • DOI

      10.7567/jjap.52.08jb31

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008, KAKENHI-PROJECT-24560010, KAKENHI-PROJECT-25000011, KAKENHI-PROJECT-25600090
  • [Journal Article] Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/alpha-Al2O3 template2013

    • Author(s)
      D.T. Khan, S. Takeuchi, J. Kikkawa, Y. Nakamura, H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura, O. Sakata, A. Sakai
    • Journal Title

      Journal of Crystal Growth

      Volume: 381 Pages: 37-42

    • DOI

      10.1016/j.jcrysgro.2013.07.012

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Journal Article] AIN homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE2012

    • Author(s)
      T. Nomura, K. Okumura, H. Miyake, K. Hiramatsu, O. Eryu and Y. Yamada
    • Journal Title

      Journal of Crystal Growth

      Volume: 350 Issue: 1 Pages: 69-71

    • DOI

      10.1016/j.jcrysgro.2011.12.025

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Journal Article] Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substratesr2012

    • Author(s)
      B. Ma, D. Jinno, H. Miyake, K. Hiramatsu and H. Harima
    • Journal Title

      Applied Physics Letters

      Volume: 100

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2012

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Phys.Status Solidi

      Volume: vol.9 Issue: 3-4 Pages: 576-579

    • DOI

      10.1002/pssc.201100797

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J10845, KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014
  • [Journal Article] Effects of carrier gas and growth temperature on MOVPE growth of AlN2012

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, H.Hiramatsu
    • Journal Title

      Phys.Status Solidi

      Volume: vol.9 Issue: 3-4 Pages: 499-502

    • DOI

      10.1002/pssc.201100712

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J10845, KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014
  • [Journal Article] Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates2012

    • Author(s)
      Bei Ma, Daiki Jinno, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Harima
    • Journal Title

      Applied Physics Letters

      Volume: 100 Issue: 1

    • DOI

      10.1063/1.3674983

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-10J08374, KAKENHI-PROJECT-21360007
  • [Journal Article] Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate2012

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake, K. Hiramatsu, T. Kuwahara, M. Mitsuhara and N. Kuwano
    • Journal Title

      Applied Physics Express

      Volume: 5

    • NAID

      10030155844

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Microstructure of AlN grown on a nucleation layer on sapphire substrate2012

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu, T.Kuwahara, M.Mitsuhara, N.Kuwano
    • Journal Title

      Appl.Phys.Express

      Volume: Volime 5 No.2 Issue: 2 Pages: 025501-025501

    • DOI

      10.1143/apex.5.025501

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J10845, KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014, KAKENHI-PROJECT-21651054
  • [Journal Article] Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template2012

    • Author(s)
      G. Nishio, S. Yang, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 370 Pages: 74-77

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Journal Article] Interaction of the dual effects triggered by A1N interlayers in thick GaN grown on 3C-SiC/Si substrates2012

    • Author(s)
      H Fang, Y Takaya, H Miyake, K Hiramatsu, H Asamura, K Kawamura
    • Journal Title

      Journal of Physics D : Applied Physics

      Volume: 45 Issue: 38 Pages: 385101-385101

    • DOI

      10.1088/0022-3727/45/38/385101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01357, KAKENHI-PROJECT-24360008
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Journal Title

      Applied Physics Express

      Volume: 4 Pages: 421031-3

    • NAID

      10028209557

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] HVPE growth of thick AlN on trench-patterned substrate2011

    • Author(s)
      K. Fujita, K. Okuura, H. Miyake, K. Hiramatsu and H. Hirayama
    • Journal Title

      Physica Status Solidi

      Volume: 8 Pages: 1483-1486

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Stress analysis of a-plane GaN grown on r-plane sapphire substrate2011

    • Author(s)
      B. Ma, H. Miyake, K. Hiramatsu and H. Harima
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 2066-2068

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and Y. Shimahara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 50

    • NAID

      40019010401

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y. Shimahara, H. Miyake, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and Y. Shimahara
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028209557

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c)

      Volume: 8 Issue: 7-8 Pages: 2069-2071

    • DOI

      10.1002/pssc.201001186

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014
  • [Journal Article] Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer2011

    • Author(s)
      H.Fang, Y.Takaya, S.Ohuchi, H.Miyake, K.Hiramatsu, H.Asamura, K.Kawamura
    • Journal Title

      physica status solidi (c)

      Volume: 9 Issue: 3-4 Pages: 550-553

    • DOI

      10.1002/pssc.201100332

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01357, KAKENHI-PROJECT-21360007
  • [Journal Article] aman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express 4

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN2011

    • Author(s)
      Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, Y.Shimahara
    • Journal Title

      APPLIED PHYSICS EXPRESS

      Volume: 4 Issue: 4 Pages: 042103-042103

    • DOI

      10.1143/apex.4.042103

    • NAID

      10028209557

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Stress analysis of a-plane GaN grown on r-plane sapphire substrates2011

    • Author(s)
      Bei Ma, Hideto Miyake, Kazumasa Hiramatsu, Hiroshi Harima
    • Journal Title

      physica status solidi (c)

      Volume: 8 Issue: 7-8 Pages: 2066-2068

    • DOI

      10.1002/pssc.201001166

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-10J08374, KAKENHI-PROJECT-21360007
  • [Journal Article] Huge binding energy of localized biexcitons in Al-rich Al_xGa_<1-x>N2011

    • Author(s)
      R.Kittaka, H.Muto, H.Murotani, Y.Yamada, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] HVPE grown thick ALN on trench-patterned substrate2011

    • Author(s)
      K. Fujita, K. Okuura, H. Miyake, K. Hiramatsu and H. Hirayama
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 1483-1486

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] HVPE growth of AlN on trench-patterned 6H-SiC substrates2011

    • Author(s)
      K. Okumura, T. Nomura, H. Miyake, K. Hiramatsu and O. Eryuu
    • Journal Title

      Physica Status Solidi

      Volume: 8 Pages: 467-469

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Huge binding energy of localized biexcitons in Al-rich Al_xGa_<1-x>N2011

    • Author(s)
      R.Kittaka, H.Muto, H.Murotani, Y.Yamada, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 98

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S. Yang, R. Miyagawa, H. Miyake, K. Hiramatsu, and H. Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10028155120

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] HVPE grown thick ALN on trench-patterned substrate2011

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, H.Hirayama
    • Journal Title

      Physica Status Solidi (c)

      Volume: 8 Issue: 5 Pages: 1483-1486

    • DOI

      10.1002/pssc.201001130

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007, KAKENHI-PROJECT-21560014
  • [Journal Article] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy2011

    • Author(s)
      Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, Y.Shimahara
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: 50 Issue: 9R Pages: 095502-095502

    • DOI

      10.1143/jjap.50.095502

    • NAID

      40019010401

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 8 Pages: 2069-2071

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Enhanced deep ultraviolet emission from Si-doped Al_xGa_<1-x>N/AlN MQWs2010

    • Author(s)
      D.Li, W.Hu, H.Miyake, K.Hiramatsu, H.Song
    • Journal Title

      Chinese Physics B

      Volume: 19

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A. Motogaito, K. Arakawa, Y. Nakayama, H. Miyake and K. Hiramatsu
    • Journal Title

      Technical Digest of the 16th Microoptics Conference

      Pages: 207-208

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Facet control in selective area growth(SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      B. Ma, R. Miyagawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Facet control in selective area growth (SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      B.Ma, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Facet control in selective area growth (SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      B.Ma, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions2010

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics 49

    • NAID

      40017033737

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Facet control in selective area growth (SAG) of a-plane GaN by MOVPE2010

    • Author(s)
      .Ma, R.Miyagawa, H.Miyake , K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R. Miyagawa, J. Wu, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M.Narukawa, H.Asamura, K.Kawamura, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M. Narukawa, H. Asamura, K. Kawamura, H. Miyake and K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions2010

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics 49

    • NAID

      40017033737

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M. Narukawa, H. Asamura, K. Kawamura, H. Miyake and K. Hiramatsu
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M.Narukawa, H.Asamura, K.Kawamura, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions2010

    • Author(s)
      W. Hu, B. Ma, D. Li, R. Miyagawa, H. Miyake, and K. Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • NAID

      40017033737

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen2010

    • Author(s)
      M.Narukawa, H.Asamura, K.Kawamura, H.Miyake, K.Hiramatsu
    • Journal Title

      Japanese Journal of Applied Physics 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of high quality c-plane AlN on a-plane sapphire2010

    • Author(s)
      R. Miyagawa, J. Wu, H. Miyake and K. Hiramatsu
    • Journal Title

      Material Research Society Symposium Proceedings

      Volume: 1201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Deep Electronic Levels of Al_xGa_<1-x>N with a Wide Range of Al Composition Grown by Metal-Organic Vapor Phase Epitaxy2010

    • Author(s)
      K.Ooyama, K.Sugawara, S.Okuzaki, H.Taketomi, H.Miyake, K.Hiramatsu, T.Hashizume
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 3801-3805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y.Katagiri, S.Kishino, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2831-2833

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Influence ofoff-cutangleof r-plane sapphireonthecrystalqualityof nonpolar a-plane AlNbyLP-HVPE2009

    • Author(s)
      J.Wu, K.Okuura, K.Fujita, K.Okumura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 4473-4477

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 3801-3805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J.Wu, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Express 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, W.Hu, D.Li, H.Miyake,K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2899-2902

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Influence of off-cutangle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE2009

    • Author(s)
      J. Wu, K. Okuura, K. Fujita, K. Okumura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 4473-4477

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on rplane sapphire by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, W.Hu, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2899-2902

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires2009

    • Author(s)
      M.Narukawa, S.Koide, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2970-2972

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] In-plane electric field induced by polarization and lateral photovoltalic effect in a-plane GaN2009

    • Author(s)
      W. Hu, B. Ma, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 3801-3805

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE2009

    • Author(s)
      B. Ma, R. Miyagawa, W. Hu, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2899-2902

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 3801-3805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy2009

    • Author(s)
      B. Ma, W. Hu, H. Miyake and K. Hiramatsu
    • Journal Title

      Applied Physics Letters

      Volume: 95

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] In-plane electric field induced by polarization and lateral photovoltalic effect in a-plane GaN2009

    • Author(s)
      W.Hu, B.Ma, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 94

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article]2009

    • Author(s)
      三宅秀人, 宮川鈴衣奈, 他35名
    • Journal Title

      窒化物基板および講師整合基板の成長とデバイス特性((株) シーエムシー出版)

      Pages: 119-127

    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J. Wu, K. Okuura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Influence ofoff-cutangleof r-plane sapphireonthecrystalqualityof nonpolar a-plane AlNbyLP-HVPE2009

    • Author(s)
      J.Wu, K.Okuura, K.Fujita, K.Okumura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 4473-4477

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J. Wu, K. Okuura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Applied Physics Express

      Volume: 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires2009

    • Author(s)
      M.Narukawa, S.Koide, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2970-2972

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J.Wu, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Express 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] In-plane electric field induced by polarization and lateral photovoltalic effect in a-plane GaN2009

    • Author(s)
      W.Hu, B.Ma, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE2009

    • Author(s)
      J. Wu, K. Okuura, K. Fujita, K. Okumura, H. Miyake, and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 4473-4477

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Photoluminesence study of Si-doped a-plane GaN grown by MOVPE2009

    • Author(s)
      D.Li, B.Ma, R.Miyagawa, M.Narukawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2906-2909

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, W.Hu, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2899-2902

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy2009

    • Author(s)
      B.Ma, W.Hu, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 95

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article]2009

    • Author(s)
      三宅秀人, 宮川鈴衣奈, 他35名
    • Journal Title

      窒化物基板および講師整合基板の成長とデバイス特性((株) シーエムシー出版)

      Pages: 119-127

    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c)

      Volume: 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Optical properties of MOVPE-grown a-plane GaN and AlGaN2009

    • Author(s)
      M. Narukawa, R. Miyagawa, B. Ma, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2903-2905

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y.Katagiri, S.Kishino, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2831-2833

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
    • Volume
      311
    • Pages
      2831-2833
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Journal Article] Photoluminesence study of Si-doped a-plane GaN grown by MOVPE2009

    • Author(s)
      D. Li, B. Ma, R. Miyagawa, M. Narukawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2906-2909

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Photoluminesence study of Si-doped a-plane GaN grown by MOVPE2009

    • Author(s)
      D.Li, B.Ma, R.Miyagawa, M.Narukawa, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2906-2909

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template2009

    • Author(s)
      Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2831-2833

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of initial conditions and growth temperature on the properties of nonpolar a-plane AlN grown by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, D.Li, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 6

      Pages: 5478-5481

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy2009

    • Author(s)
      J.Wu, K.Okuura, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Express 2

    • NAID

      10027011951

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Optical properties of MOVPE-grown a-plane GaN and AlGaN2009

    • Author(s)
      M.Narukawa, R.Miyagawa, B.Ma, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2903-2905

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires2009

    • Author(s)
      M. Narukawa, S. Koide, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 2970-2972

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy2009

    • Author(s)
      B.Ma, W.Hu, H.Miyake, K.Hiramatsu
    • Journal Title

      Applied Physics Letters 95

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Optical properties of MOVPE-grown a-plane GaN and AlGaN2009

    • Author(s)
      M.Narukawa, R.Miyagawa, B.Ma, H.Miyake, K.Hiramatsu
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2903-2905

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Journal Article] Reactor-pres sure dependence of growthof a-plane Ga N on r-plane sapphire2008

    • Author(s)
      R. Miyagawa, M. Narukawa, B. Ma, H. Miyake and K. Hiramatsu.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Gro wth of crack-free AlGaN ons elective-area-growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et.al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer2008

    • Author(s)
      D.Li, M.Aoki, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Selective Area Growth of III-Nitride and Their Application for Emitting Devices2008

    • Author(s)
      K. Hiramatsu, H. Miyake, D. Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Improved optical properties of AlGaN using periodic structures2008

    • Author(s)
      H.Miyake, T. Ishii, A. Motogaito and K.Hiramatsu
    • Journal Title

      Physica Status Solidi c 5

      Pages: 1822-1824

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire2008

    • Author(s)
      R. Miyagawa, M. Narukawa, B. Ma, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Gro wth of crack-free AlGaN ons elective-are a-growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Growth of crack-free AlGaN ons elective-area-growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu, et al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective Area Growth of III-Nitride and Their Application for Emitting Devices2008

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Improved optical properties of AlGaN using periodic structures2008

    • Author(s)
      H. Miyake, T. Ishii, A. Motogaito, K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1822-1824

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer2008

    • Author(s)
      D. Li, M. Aoki, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi (c) 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2008

    • Author(s)
      K.Hiramatsu, H.Miyake, D.Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperaturl A1N buffer layer2008

    • Author(s)
      D. Li, M. Aoki, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi c 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity2008

    • Author(s)
      A. Motogaito, K. Manabe, Y. Yamanaka, N. Machida, H. Miyake, K. Hiramatsu
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 218-221

    • NAID

      110006663916

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III -nitride and their application for emitting devices2008

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia2008

    • Author(s)
      Y. Liu, S.Koide, H.Miyake, K.Hiramatsu, et.al.
    • Journal Title

      Physica Status Solidi c 5

      Pages: 1522-1524

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire2008

    • Author(s)
      R. Miyagawa, M. Narukawa, B. Ma, H. Miyake, K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Growth of crack-free AlGaN ons elective-area-growth GaN2008

    • Author(s)
      H. Miyake, N.Masuda, Y. Ogawahara, M. Narukawa, K.Hiramatsu, et.al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer2008

    • Author(s)
      D. Li, M. Aoki, H. Miyake, K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Thermal analys is of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia2008

    • Author(s)
      Y. Liu, S. Koide, H. Miyake, K. Hiramatsu, et al.
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1522-1524

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Growth of crack-free AlGaN ons elective-area-growth GaN2008

    • Author(s)
      H.Miyake, N.Masuda, Y.Ogawahara, M.Narukawa, K.Hiramatsu, et al.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4885-4887

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Improved optical properties of AlGaN using periodic structures2008

    • Author(s)
      H.Miyake, T.Ishii, A.Motogaito and K.Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1822-1824

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Reactor-pressure dependence of growthof a-plane GaN on r-plane sapphire2008

    • Author(s)
      R.Miyagawa, M.Narukawa, B.Ma, H.Miyake, K.Hiramatsu.
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Reactor-pres sure dependence of growthof a-plane Ga N on r-plane sapphire2008

    • Author(s)
      R. Miyagawa, M. Narukawa, B. Ma, H. Miyake and K. Hiramatsu.
    • Journal Title

      Journal of Cryst al Growth 310

      Pages: 4979-4982

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Optical characterization of Japanese papers for application in the LED lighting system with human sensitivity2008

    • Author(s)
      A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 218-221

    • NAID

      110006663916

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Improved surface morphology of flow-modulated MOVPE grown AlN on sapphire using thin medium-temperature AlN buffer layer2008

    • Author(s)
      D. Li, M. Aoki, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 5

      Pages: 1818-1821

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2008

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Journal of Light & Visual Environment 32

      Pages: 177-182

    • NAID

      110006663908

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia2008

    • Author(s)
      Y. Liu, S. Koide, H. Miyake, K. Hiramatsu, et.al.
    • Journal Title

      Physica Status Solidi(c) 5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] High temperature growth of AIN film by LP-HVPE2007

    • Author(s)
      K. Tsujisawa, S. Kishino, Y.H. Liu, H.Miyake, K. Hiramatsu, T. shibata, M. tanaka
    • Journal Title

      Physica Status Solidi (c)4,(7)

      Pages: 2252-2255

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H. Miyake, K. Nakao and K. Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] High temperature growth of AIN film by LP-HVPE2007

    • Author(s)
      K.Tsujisawa, S.Kishino, Y.H.Liu, H.Miyake, K.Hiramatsu, et. al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2252-2255

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H. Miyake, K. Nakao and K. Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Dependence of In mole fraction in InGaN on GaN facets2007

    • Author(s)
      K. Nakao, D. Li, Y. Liu, H. Miyake and K. Hiramatsu
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2383-2386

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of HI-nitride and their application for emitting devices2007

    • Author(s)
      K. Hiramatsu, H. Miyake, D. Li
    • Journal Title

      Proc. 1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressivestrain AIN/Sapphire template for hydride vapor phase epitaxy of thick AIN film2007

    • Author(s)
      K.Tsujisawa, S.Kishino, D.Li, H.Miyake, K.Hiramatsu, et. al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Supression of crack generation using high・compressive-strain AIN/Sapphire template for hydride vapor phase epitaxy of thick AIN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, et. al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Optical characterization of Japanese papers for application to theLEDlightning system wit hhuman sensitivity2007

    • Author(s)
      A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
    • Journal Title

      Proc.1st International Confernce on White LEDsand Solid State Lighting

      Pages: 440-443

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H. Miyake, K. Nakao and K. Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H.Miyake, K.Nakao, K.Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures" Superlattices and Microstructures2007

    • Author(s)
      H. Miyake, K. Nakao, K. Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressive-strain AIN/Sapphire template for hydride vapor phase epitaxy of thick MN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, T. Shibata, M. Tanaka
    • Journal Title

      Japanese Journal of Applied Physics 46,(23)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressive-strain AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, et. al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Influence of growth conditions on Al incorporation to Al_xGa_<1-x>N (x>0.4) grown by MOVPE2007

    • Author(s)
      D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 372-374

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III-nitride and their application for emittingdevices2007

    • Author(s)
      K. Huamatsu, H. Miyake and D. Li
    • Journal Title

      Proc.1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2007

    • Author(s)
      K.Hiramatsu, H.Miyake and D.Li
    • Journal Title

      Proc.1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • NAID

      110006663908

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN multiple quantum wells2007

    • Author(s)
      D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 500-503

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressive-strain AIN/Sapphire template for hydride vapor phase epitaxy of thick AIN film2007

    • Author(s)
      K. Tsujisawa, S. Kishino, D. Li, H. Miyake, K. Hiramatsu, et. al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] High temperaturegrowth of AlN film by LP-HVPE2007

    • Author(s)
      K.Tsujisawa, S.Kishino, Y.Liu, H.Miyake,K.Hiramatsu et.al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2252-2255

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2007

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Proc. 1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • NAID

      110006663908

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Blue emission from InGaN/GaN hexagonal pyramid structures2007

    • Author(s)
      H.Miyake, K.Nakao andK.Hiramatsu
    • Journal Title

      Superlattices and Microstructures 41

      Pages: 341-346

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Synthesis of IIInitride microcrystals using metal-EDTA complexes2007

    • Author(s)
      Y.H.Liu, S.Koide, H.Miyake, K.Hiramatsu, et. al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2346-2349

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Structural and optical properties of Si-doped AIGaN/AIN multiple quantum wells grown by MOVPE2007

    • Author(s)
      D.Li, T.Katsuno, M.Aoko, H.Miyake, K.Hiramatsu, et. al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2494-2497

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Structural and optical properties of Si-doped AIGaN/AIN multiple quantum wells grown by MOVPE2007

    • Author(s)
      D. Li, T. Katsuno, M. Aoki, H. Miyake, K. Hiramatsu, T. Shibata
    • Journal Title

      Physica Status Solidi (c)4,(7)

      Pages: 2494-2497

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN multiple quantum wells2007

    • Author(s)
      D. Li, M. Aoki, T. Katsuno, H. Miyake, K.Hiramatsu and M. Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 500-503

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Selective area growth of III-nitride and their application for emitting devices2007

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Journal Title

      Proc. 1st International Confernce on White LEDs and Solid State Lighting

      Pages: 72-77

    • NAID

      110006663908

    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Influence of growth conditions on Al incorporation to Al_xGa_<1-x>N (x>0.4) grown by MOVPE2007

    • Author(s)
      D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 372-374

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE2007

    • Author(s)
      D. Li, T. Katsuno, M. Aoki, H. Miyake, K. Hiramatsu et.al.
    • Journal Title

      Physica Status Solidi(c) 4

      Pages: 2494-2497

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Influence of growth interruption and Si doping on the structural and optical properties of AlGaN/AlN multiple quantum wells2007

    • Author(s)
      D.Li, M.Aoki, T.Katsuno, H.Miyake, K.Hiramatsu, M.Tanaka
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 500-503

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Dependence of In mole fraction in InGaN on GaN facets2007

    • Author(s)
      K. Nakao, D. Li, Y.H. Liu, H. Miyake, K. Hiramatsu
    • Journal Title

      Physica Status Solidi (c)4,(7)

      Pages: 2383-2386

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Supression of crack generation using high-compressive-strain AlN/Sapphire template for hydride vapor phase epitaxy of thick AlN film2007

    • Author(s)
      K.Tsujisawa, S.Kishino, D.Li, H.Miyake, K.Hiramatsu, et al.
    • Journal Title

      Japanese Journal of Applied Physics 46

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Fabrication of high-quality nitride semiconductors by facet control technique2006

    • Author(s)
      H.Miyake, K.Hiramatsu
    • Journal Title

      OYO BUTURI (in Japanese) Vol.75, No.48

      Pages: 467-472

    • NAID

      10017541097

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] ファセット制御技術による高品質窒化物半導体の作製2006

    • Author(s)
      三宅秀人
    • Journal Title

      応用物理 第75巻 第4号

      Pages: 467-472

    • NAID

      10017541097

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate2005

    • Author(s)
      Y.Shibata, A.Motogaito, H.Miyake, K.Hiramatsu, Y.Ohuchi, H.Okagawa, K.Tadatomo, T.Nomura, Y.Hamamura, K.Fukui
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 831

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer2005

    • Author(s)
      A.Ishiga, T.Onishi, Y.LIU, M.Haraguchi, N.Kuwano, T.Shibata, M.Tanaka, H.Miyake, K.Hiramatsu
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 831

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Freestanding GaN substrate by Advanced FACELO Technique with Masking Side-facets2005

    • Author(s)
      Shinya Bohyama, Hideto Miyake, Kazumasa Hiramatsu, Yoshihiko Tsuchida, Takayoshi Maeda
    • Journal Title

      Japan Journal of Applied Physics 44

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360-10nm) using Synchrotron Radiation2004

    • Author(s)
      A.Motogaito, K.Hiramatsu, Y.Shibata, H.Watanabe, H.Miyake, K.Fukui, Y.Ohuchi, K.Tadatomo, Y.Hamamura
    • Journal Title

      Mat.Res.Soc.Symp.Proc. 798

      Pages: 53-58

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] High performance of Schottky detectors (265-100 nm) using n-Al_<0.5>Ga_<0.5>N on AlN epitaxial layer2003

    • Author(s)
      Hideto Miyake
    • Journal Title

      Physica Status Solidi (a) Vol.200, No.1

      Pages: 151-154

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] High performance of Schottky detectors (265-100 nm) using n-Al_<0.5>Ga_<0.5>N on AlN epitaxial layer2003

    • Author(s)
      H.Miyake et al.
    • Journal Title

      Physica Status Solidi (a) Vol.200, No1

      Pages: 151-154

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] High temperature growth of AlN film by LP-HVPE

    • Author(s)
      K.Tsujisawa, S.Kishino, Y.Liu, H.Miyake, K.Hiramatsu, T.Shibata, M.Tanaka
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Blue Emission from InGaN/GaN Hexagonal Pyramid Structures

    • Author(s)
      H.Miyake, K.Nakao, K.Hiramatsu
    • Journal Title

      Superlattices and Microstructures (掲載決定)

    • Data Source
      KAKENHI-PLANNED-18069006
  • [Journal Article] Synthesis of III-nitride microcrystals using Metal-EDTA complexes

    • Author(s)
      Y.Liu, H.Miyake, K.Hiramatsu, K.Nakamura, N.Nambu
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Structural and electrical properties of Si-doped a-pl ane GaN grown on r-plane sapphire by MOVPE

    • Author(s)
      B. Ma, R. Miyagawa, W. Hu, D. Li, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Dependence of In mole fraction in InGaN on GaN facets

    • Author(s)
      K.Nakao, D.Li, Y.Liu, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Low-Pressur e HVPE growth of crack free thick AlN on trench patterened AlN template

    • Author(s)
      Y. Katagiri, S. Kishino, K. Okuura, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Optical pro perties of MOVPE-grown a-plane GaN a nd AlGaN

    • Author(s)
      M. Narukawa, R. Miyagawa, B. Ma, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

    • Author(s)
      D. Li, B. Ma, R. Miyagawa, W. Hu, M. Narukawa, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of Crystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Dependence of In mole fraction in InGaN on GaN facets

    • Author(s)
      K.Nakao, D.Li, Y.Liu, H.Miyake, K.Hiramatsu
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

    • Author(s)
      D.Li, T.Katsuno, M.Aoki, H.Miyake, K.Hiramatsu, T.Shibata
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] High temperature growth of AlN film by LP-HVPE

    • Author(s)
      K.Tsujisawa, S.Kishino, Y.Liu, H.Miyake, K.Hiramatsu, T.Shibata, M.Tanaka
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] High Quality AlGaN/AlN Superlattices grown on AlN/Sapphire Template by MOVPE

    • Author(s)
      Y.H.Liu, A.Ishiga, T.Ohnishi, H.Miyake, K.Hiramatsu, T.Shibata, M.Tanaka
    • Journal Title

      Compound Semiconductors (In press)

    • Data Source
      KAKENHI-PROJECT-15360008
  • [Journal Article] Blue Emission from InGaN/GaN Hexagonal Pyramid Structures

    • Author(s)
      H.Miyake, K.Nakao, K.Hiramatsu
    • Journal Title

      Superlattices and Microstructures (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

    • Author(s)
      D.Li, T.Katsuno, M.Aoki, H.Miyake, K.Hiramatsu, T.Shibata
    • Journal Title

      Physica Status Solidi (c) (掲載決定)

    • Data Source
      KAKENHI-PROJECT-18560010
  • [Journal Article] Growth of undoped and Zn-doped GaN nanowires

    • Author(s)
      M. Narukawa, S. Koide, H. Miyake and K. Hiramatsu
    • Journal Title

      Journal of C rystal Growth (掲載決定、印刷中)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Journal Article] Fabrication of a Binary Diffractive Lens for Controlling the Luminous Intensity Distribution of LED Light

    • Author(s)
      A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake, K. Hiramatsu
    • Journal Title

      Optical Review (掲載決定、印刷中)

    • NAID

      10025305178

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Patent] 窒化物半導体基板2021

    • Inventor(s)
      三宅 秀人
    • Industrial Property Rights Holder
      三宅 秀人
    • Industrial Property Rights Type
      特許
    • Filing Date
      2021
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体基板、半導体素子及び窒化物半導体基板の製造方法2021

    • Inventor(s)
      三宅 秀人, 王 丁, 上杉 謙次郎
    • Industrial Property Rights Holder
      三宅 秀人, 王 丁, 上杉 謙次郎
    • Industrial Property Rights Type
      特許
    • Filing Date
      2021
    • Overseas
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体テンプレートおよび窒化物半導体デバイス2020

    • Inventor(s)
      三宅 秀人, 藤倉 序章, 今野 泰一郎
    • Industrial Property Rights Holder
      三宅 秀人, 藤倉 序章, 今野 泰一郎
    • Industrial Property Rights Type
      特許
    • Filing Date
      2020
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体基板、半導体素子及び窒化物半導体基板の製造方法2020

    • Inventor(s)
      三宅秀人、王丁、上杉謙次郎
    • Industrial Property Rights Holder
      三宅秀人、王丁、上杉謙次郎
    • Industrial Property Rights Type
      特許
    • Filing Date
      2020
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 半導体基板および半導体基板の製造方法2018

    • Inventor(s)
      永松 謙太郎, 吉田 治正, 三宅 秀人
    • Industrial Property Rights Holder
      三重大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体基板の製造方法および窒化物半導体基板2018

    • Inventor(s)
      上杉 謙次郎, 三宅 秀人
    • Industrial Property Rights Holder
      三重大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体2018

    • Inventor(s)
      三宅秀人,岩谷素顕,川瀬雄太,岩山章,竹内哲也,上山智,赤崎勇
    • Industrial Property Rights Holder
      三重大学,名城大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体基板の製造方法、窒化物半導体基板及び光半導体デバイス2018

    • Inventor(s)
      林 侑介, 三宅 秀人, 上杉 謙次郎
    • Industrial Property Rights Holder
      三重大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体基板の製造方法および窒化物半導体基板2018

    • Inventor(s)
      林 侑介, 三宅 秀人
    • Industrial Property Rights Holder
      三重大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体の製造方法、窒化物半導体、及び発光素子2018

    • Inventor(s)
      上杉 謙次郎, 三宅 秀人
    • Industrial Property Rights Holder
      三重大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2018
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化物半導体基板の製造方法2016

    • Inventor(s)
      三宅秀人
    • Industrial Property Rights Holder
      三宅秀人
    • Industrial Property Rights Type
      特許
    • Filing Date
      2016
    • Acquisition Date
      2019
    • Overseas
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Patent] 窒化アルミニウム(AlN)膜を有する基板および窒化アルミニウム(AlN)膜の製造方法2013

    • Inventor(s)
      福山博之、三宅秀人
    • Industrial Property Rights Holder
      東北大学、三重大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-08-26
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Patent] 窒化アルミニウム(AlN)膜を有する基板および窒化アルミニウム(AlN)膜の製造方法2013

    • Inventor(s)
      福山博之、三宅秀人
    • Industrial Property Rights Holder
      福山博之、三宅秀人
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-174057
    • Filing Date
      2013-08-28
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Patent] 半導体素子用エピタキシャル基板,半導体素子用エピタキシャル基板の作製方法,およびALN単結晶自立基板2012

    • Inventor(s)
      三宅秀人,平松和政
    • Industrial Property Rights Holder
      国立大学法人三重大学
    • Industrial Property Number
      2012-129102
    • Filing Date
      2012-06-06
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] TEM Analysis of MBE-Grown AlN on N-polar Sputtered and Annealed AlN templates2022

    • Author(s)
      Y. Hayashi, T. Tohei, Z. Zhang, H. G. Xing, D. Jena, Y. Cho, H. Miyake, and A. Sakai
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22KK0055
  • [Presentation] スパッタアニール AlN を用いた波長 2 30 n m 帯 U V LED の開発2022

    • Author(s)
      上杉謙次郎, 市川修平, 肖 世玉, 正直花奈子, 中村孝夫, 土谷正彦, 小 一信, 三宅秀人
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] スパッタアニールAlNの極性制御2022

    • Author(s)
      正直花奈子、上杉謙次郎、肖世玉、三宅秀人
    • Organizer
      第一回極性制御研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] Polarity Control of Sputter-Deposited AlN with High-Temperature Face-to-Face Annealing2022

    • Author(s)
      K. Shojiki, K. Uesugi, S. Xiao, H. Miyake
    • Organizer
      The 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] サファイア上への MOVPE法 による BN成長 と 高温 アニール2022

    • Author(s)
      井谷彩花, 窪谷茂幸, 肖 世玉, 正直花奈子, 上杉謙次郎, 三宅秀人
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] Fabrication of high-quality AlN templates by Face-to-face annealing of sputter-deposited films2022

    • Author(s)
      H. Miyake, K. Uesugi, S. Xiao, K. Shojiki, T. Nakamura
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2022)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] スパッタアニール法によるAlN垂直方向極性反転構造の作製2022

    • Author(s)
      正直花奈子, 上杉謙次郎, 肖 世玉, 三宅秀人
    • Organizer
      第41回電子材料シンポジウム(EMS41)
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] スパッタアニール 法 作製 a 面 AlN における 結晶性 の スパッタ 温度 依存性2022

    • Author(s)
      小川優輝, 渋谷康太, 上杉謙次郎, 肖 世玉, 正直花奈子, 三宅秀人
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] スパッタアニール法作製a面AlNのc軸配向方向の基板微傾斜角度依存性2022

    • Author(s)
      小川優輝, 渋谷康太, 上杉謙次郎, 肖 世玉, 正直花奈子, 秋山亨, 三宅秀人
    • Organizer
      第14回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] Polarity Control of Face-to-Face Annealed Sputtered AlN2022

    • Author(s)
      K. Shojiki, K. Uesugi, S. Xiao, H. Miyake
    • Organizer
      The 22nd International Vacuum Congress(IVC-22)
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] ゲート絶縁膜を有するAlGaNチャネルHEMTの作製と評価2022

    • Author(s)
      中岡樹, 上杉謙次郎, 漆山真, 正直花奈子, 三宅秀人
    • Organizer
      第14回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] ピラー 形成 AlN テンプレート上 への HVPE法による AlN厚膜 成長2022

    • Author(s)
      肖 世玉, 岩山章, 上杉謙次郎, 正直花奈子, 岩谷素顕, 三宅秀人
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] 窒化物半導体結晶成長技術を駆使した量子光源の開発2022

    • Author(s)
      正直花奈子, 本田啓人, 上杉謙次郎, 肖 世玉, 谷川智之, 片山竜二, 三宅秀人
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] 低転位密度N極性AlNテンプレート上MOVPEホモエピタキシャル成長のサファイア基板オフ角度依存性2022

    • Author(s)
      並河楽空, 正直花奈子, 吉田莉久, 上杉謙次郎, 三宅秀人
    • Organizer
      第14回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] Fabrication of Face-to-Face Annealed Sputter-Deposited AlN for High EQE 265 nm LEDs2022

    • Author(s)
      K. Uesugi, S. Kuboya, T. Nakamura, K. Shojiki, S. Xiao, M. Kubo, H. Miyake
    • Organizer
      The 5th International Workshop on Ultraviolet Materials and Devices (IWUMD 2022)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] 高品質AlNテンプレートの歪制御と電子デバイス応用2022

    • Author(s)
      林侑介, 藤平哲也, Yongjin Cho, Huili Grace Xing, Debdeep Jena, 三宅秀人, 酒井朗
    • Organizer
      電気学会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用調査専門委員会(第2期)」
    • Invited
    • Data Source
      KAKENHI-PROJECT-22KK0055
  • [Presentation] Crack Formation Mechanism of Sputtered and Annealed AlN on c- and a-Plane Sapphire2022

    • Author(s)
      Y. Hayashi, T. Tohei, K. Uesugi, K. Shojiki, H. Miyake, and A. Sakai
    • Organizer
      International Workshop on Nitride Semiconductors (IWN 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-22KK0055
  • [Presentation] マルチ・スパッタアニール 法 による多層極性反転 AlN構造の作製2022

    • Author(s)
      玉野智大, 正直花奈子, 本田啓人, 上杉謙次郎, 肖 世玉, 上向井正裕, 谷川智之, 片山竜二, 三宅秀人
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] ステップ端密度が制御された AlN 表面への GaN AlN 量子井戸の MOVPE 成長2022

    • Author(s)
      山中祐人, 正直花奈子, 上杉謙次郎, 肖 世玉, 三宅秀人
    • Organizer
      第14回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] m面サファイア基板上スパッタアニールAlN の面方位制御2022

    • Author(s)
      上杉謙次郎, 張 芸賢, 正直花奈子, 肖 世玉, 三宅秀人
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] High-Power UV-C LEDs on Face-toFace Annealed Sputter-Deposited AlN2022

    • Author(s)
      K. Uesugi, S. Kuboya, T. Nakamura, K. Shojiki, S. Xiao, M. Kubo, H. Miyake
    • Organizer
      The 10th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA2022)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] MOVPE Homoepitaxial Growth on N-polar Annealed Sputter-Deposited AlN Films2022

    • Author(s)
      G. Namikawa, K. Shojiki, R. Yoshida, K. Uesugi, H. Miyake
    • Organizer
      The 22nd International Vacuum Congress (IVC-22)
    • Data Source
      KAKENHI-PROJECT-23K23238
  • [Presentation] Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire2021

    • Author(s)
      K. Shojiki, K. Uesugi, S. Kuboya, and H. Miyake
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ・アニール法によるAlGaN薄膜の作製2021

    • Author(s)
      窪谷 茂幸, 岩山 章, 上杉 謙次郎, 正直 花奈子, 則松 研二, 三宅 秀人
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Thick AlN layers grown on macro-scale patterned sapphire substrates with sputter-deposited annealed AlN films by hydride vapor-phase epitaxy2021

    • Author(s)
      Shiyu Xiao, Kanako Shojiki, Hideto Miyake
    • Organizer
      The Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールしたAlNテンプレート上のAlGaN成長における異常成長の起源2021

    • Author(s)
      上杉 謙次郎, 手銭 雄太, 肖 世玉, 則松 研二, 岡村 実奈, 荒木 努, 三宅 秀人
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法アニール処理AlN上AlGaNチャネルHEMTのMOVPE成長2021

    • Author(s)
      森 隆一, 上杉 謙次郎, 白土 達也, 窪谷 茂幸, 正直 花奈子, 三宅 秀人
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Fabrication of high crystalline AlN/sapphire for deep UV-LED2021

    • Author(s)
      H. Miyake, K. Uesugi, S. Xiao, K. Shojiki, S. Kuboya
    • Organizer
      Photonics West 2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Development of DUV-LED grown on high-temperature annealed AlN template2021

    • Author(s)
      K. Uesugi, D. Wang, K. Shojiki, S. Kuboya, and H. Miyake
    • Organizer
      Photonics West 2021
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールによる転位密度107cm-2のAlNテンプレート作製2021

    • Author(s)
      三宅 秀人, 正直 花奈子, 肖 世玉, 上杉 謙次郎, 窪谷 茂幸
    • Organizer
      第68回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] High-quality AlN template prepared by face-to-face annealing of sputtered AlN on sapphire2021

    • Author(s)
      H. Miyake, K. Uesugi, K. Shojiki, S. Xiao, D. Wang, S. Kuboya
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology, (CGCT-8)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Fabrication of UV-C LED on face-to-face annealed sputter-deposited AlN template2021

    • Author(s)
      K. Uesugi, D. Wang, K. Shojiki, S. Kuboya, and H. Miyake
    • Organizer
      The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] サファイア基板上AlGaN材料UVBレーザダイオードの構造検討2020

    • Author(s)
      佐藤 恒輔, 山田 和輝, 石塚 彩花, 田中 隼也, 大森 智也, 手良村 昌平, 岩山 章, 三宅 秀人, 岩谷 素顕, 竹内 哲也, 上山 智, 赤﨑 勇
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールしたスパッタ成膜 AlN テンプレート上への DUV LED 作製2020

    • Author(s)
      上杉 謙次郎, 手銭 雄太,正直 花奈子, 窪谷 茂幸,三宅 秀人
    • Organizer
      2020年第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(1)2020

    • Author(s)
      嶋 紘平, 正直 花奈子, 上杉 謙次郎, 小島 一信, 上殿 明良, 三宅 秀人, 秩父 重英
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温熱処理したスパッタAlN膜の熱歪解析2020

    • Author(s)
      林侑介, 上杉謙次郎, 正直花奈子, 三宅秀人, 藤平哲也, 酒井朗
    • Organizer
      2020年第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタAlN上にMOVPE成長させたAlN薄膜のカソードルミネッセンス評価2020

    • Author(s)
      粕谷拓生, 嶋紘平, 正直花奈子, 上杉謙次郎, 小島一信, 上殿明良, 三宅秀人, 秩父重英
    • Organizer
      第12回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(1)2020

    • Author(s)
      嶋紘平、中須大蔵、正直花奈子、上杉謙次郎、小島一信、上殿明良、三宅秀人、秩父重英
    • Organizer
      2020年第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法アニール処理AlN上GaN薄膜のMOVPE成長2020

    • Author(s)
      白土 達也, 上杉 謙次郎, 窪谷 茂幸, 正直 花奈子, 三宅 秀人
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールスパッタAlN上にMOVPE成長させたAlNの陰極線蛍光評価(2)2020

    • Author(s)
      粕谷 拓生, 嶋 紘平, 正直 花奈子, 上杉 謙次郎, 小島 一信, 上殿 明良, 三宅 秀人, 秩父 重英
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールしたスパッタAlN上に成長させたAlNの陰極線蛍光評価(2)2020

    • Author(s)
      中須大蔵、嶋紘平、正直花奈子、上杉謙次郎、小島一信、上殿明良、三宅秀人、秩父重英
    • Organizer
      2020年第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法AlNバッファ層を用いたサファイア基板上へのh-BNの堆積と高温アニールによる結晶性向上2020

    • Author(s)
      形岡 遼志, 小泉 晴比古, 岩山 章, 三宅 秀人
    • Organizer
      電子情報通信学会 エレクトロニクスソサイエティ レーザ・量子エレクトロニクス研究会(LQE)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] AlNテンプレート上歪み緩和AlGaN成長のためのAlN/GaN超格子層導入2020

    • Author(s)
      稲森 崇文, 窪谷 茂幸, 石原 頌也, 白土 達也, 正直 花奈子, 上杉 謙次郎, 三宅 秀人
    • Organizer
      電子情報通信学会 エレクトロニクスソサイエティ レーザ・量子エレクトロニクス研究会(LQE)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] N-PSS上スパッタ堆積アニールAlNテンプレートに成長させたAlN厚膜の微細構造解析2020

    • Author(s)
      山本 望, 濱地 威明, 林 侑介, 藤平 哲也, 三宅 秀人, 酒井 朗
    • Organizer
      応用物理学会秋 季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 選択MOVPE成長による原子層レベルのAlN表面形態制御2020

    • Author(s)
      川端心, 正直花奈子, 窪谷茂幸, 上杉謙次郎, 三宅秀人
    • Organizer
      第49回結晶成長国内会議(JCCG-49)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] AlNの結晶性向上に向けたサファイア基板表面の大気雰囲気アニールによる平坦化2020

    • Author(s)
      土堀泰征, 上杉謙次郎, 三宅秀人
    • Organizer
      第49回結晶成長国内会議(JCCG-49)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高品質AlN 上 RF MBE 成長 InN の極微構造評価 (II)2020

    • Author(s)
      橘 秀紀、高林 佑介、中村 亮介、毛利真一郎、名西ヤスシ、荒木努、正直花奈子、三宅 秀人
    • Organizer
      2020年第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールしたスパッタ成膜AlNテンプレート上へのDUV-LED作製(2)2020

    • Author(s)
      上杉 謙次郎, 王 丁, 手銭 雄太, 肖 世玉, 正直 花奈子, 窪谷 茂幸, 三宅 秀人
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Effect of MOVPE Growth Conditions on Crystallinity of AlN films on Nano-Patterned Annealed Sputtered AlN Templates2020

    • Author(s)
      Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao and Hideto Miyake
    • Organizer
      The 12th International Workshop on Regional Innovation Studies 2020 (IWRIS2020)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法と高温アニールで作製した-c/+c AlN薄膜の電子線回折による極性判定2020

    • Author(s)
      林 侑介, 野本 健斗, 濱地 威明, 藤平 哲也, 三宅 秀人, 五十嵐 信行, 酒井 朗
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] GRIN-SCH構造を用いたAlGaN系UV-Bレーザダイオードの最適化2020

    • Author(s)
      田中 隼也, 佐藤 恒輔, 安江 信次, 荻野 雄矢, 山田 和輝, 石塚 彩花, 手良村 昌平, 岩山 章, 岩谷 素顕, 竹内 哲也, 上山 智, 赤﨑 勇, 三宅 秀人
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 低転位密度AlN膜の作製とそのテンプレート上AlGaN成長2020

    • Author(s)
      上杉謙次郎, Ding Wang, 三宅秀人
    • Organizer
      日本学術振興会「結晶成長の科学と技術」第161委員会第114回研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] ナノパターン加工したスパッタ・アニール法AlNテンプレート上のMOVPE成長AlN膜の結晶性評価2020

    • Author(s)
      伊庭由季乃, 正直花奈子, 窪谷茂幸, 上杉謙次郎, 肖世玉, 三宅秀人
    • Organizer
      第12回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] サファイア基板上へのスパッタ法を用いたh-BNの堆積と高温アニールによる結晶性向上2020

    • Author(s)
      形岡 遼志, 小泉 晴比古, 岩山 章, 三宅 秀人
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 低転位密度AlNテンプレートを用いた深紫外LEDの開発2020

    • Author(s)
      上杉謙次郎, Ding Wang, 正直花奈子, 窪谷茂幸, 三宅秀人
    • Organizer
      第12回ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールに伴うSiC基板上スパッタAlNの結晶性と歪み評価2020

    • Author(s)
      杉浦雅紀, 上杉謙次郎, 三宅秀人
    • Organizer
      第12回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高電子移動度トランジスタのための原子層平滑なAlNテンプレート上へのGaN成長2020

    • Author(s)
      白土 達也, 上杉 謙次郎, 窪谷 茂幸, 正直 花奈子, 三宅 秀人
    • Organizer
      電子情報通信学会 エレクトロニクスソサイエティ レーザ・量子エレクトロニクス研究会(LQE)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] AlGaN系 UV-B LDにおける低損失を実現した構造の特性評価2020

    • Author(s)
      大森 智也, 石塚 彩花, 田中 隼也, 佐藤 恒輔, 安江 信次, 荻野 雄矢, 山田 和輝, 手良村 昌平, 岩山 章, 岩谷 素顕, 竹内 哲也, 上山 智, 赤﨑 勇, 三宅 秀人
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高品質AlGaN結晶の結晶成長とその上に作製したUV-B半導体レーザ2020

    • Author(s)
      岩谷 素顕, 佐藤 恒輔, 田中 隼也, 手良村 昌平, 大森 智也, 山田 和輝, 石塚 彩花, 下川 萌葉, 荻野 雄矢, 岩山 章, 竹内 哲也, 上山 智, 赤﨑 勇, 三宅 秀人
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Control of strain in AlGaN films on AlN templates by AlN/GaN superlattices2020

    • Author(s)
      Takafumi Inamori, Shigeyuki Kuboya, Shoya Ishihara, Tatsuya Shirato, Kenjiro Uesugi, Kanako Shojiki and Hideto Miyake
    • Organizer
      The 12th International Workshop on Regional Innovation Studies 2020 (IWRIS2020)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高品質AlN結晶の作製とその紫外線デバイス応用2020

    • Author(s)
      三宅 秀人, 正直 花奈子, 肖 世玉, 上杉 謙次郎, 小泉 晴比古, 窪谷 茂幸
    • Organizer
      応用物理学会秋季学術講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] ナノパターンを有するスパッタ・アニール法AlNテンプレート上へのAlNのMOVPE成長2020

    • Author(s)
      伊庭 由季乃, 正直 花奈子, 窪谷 茂幸, 上杉 謙次郎, 肖 世玉, 三宅 秀人
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールAlNテンプレートを用いた分極ドープ深紫外LED作製2020

    • Author(s)
      河端一輝, 窪谷茂幸, 上杉謙次郎, 正直花奈子, 三宅秀人
    • Organizer
      第49回結晶成長国内会議(JCCG-49)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] High quality AlN film on sapphire prepared by two step sputtering-annealing2020

    • Author(s)
      Ding Wang, Kenjiro Uesugi, Shiyu Xiao, Yuta Tezen, Kenji Norimatsu, Kanako Shojiki, Shigeyuki Kuboya, Hideto Miyake
    • Organizer
      2020年第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 低転位密度AlNテンプレート上SiドープAlGaNの電気的・光学的特性評価2020

    • Author(s)
      森隆一, 上杉謙次郎, 正直花奈子, 窪谷茂幸, 白土達也, 三宅秀人
    • Organizer
      第12回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] ナノストイプパターン加工した低転位密度AlNテンプレート上へのMOVPE成長と結晶性評価2020

    • Author(s)
      伊庭由季乃, 正直花奈子, 窪谷茂幸, 上杉謙次郎, 肖世玉, 三宅秀人
    • Organizer
      電子情報通信学会 エレクトロニクスソサイエティ レーザ・量子エレクトロニクス研究会(LQE)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] UV-B LDにおける分極ドーピングp型AlGaNクラッド層のAl組成およびMg濃度依存性2020

    • Author(s)
      山田 和輝, 佐藤 恒輔, 安江 信次, 田中 隼也, 手良村 昌平, 荻野 雄矢, 大森 智也, 石塚 彩花, 岩山 章, 岩谷 素顕, 竹内 哲也, 上山 智, 赤﨑 勇, 三宅 秀人, 寒川 義裕, Sakowski Konrad
    • Organizer
      応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Preparation of high-quality AlN templates for deep UV devices2019

    • Author(s)
      H. Miyake, K. Shojiki, K. Uesugi, S. Xiao, H. Koizumi, S. Kuboya
    • Organizer
      4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV)
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Threading Dislocation Reduction of Sputter-Deposited AlN Templates for Deep-Ultraviolet Light-Emitting Device Applications2019

    • Author(s)
      K. Uesugi, Y. Hayashi, K. Shojiki, H. Miyake
    • Organizer
      The International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 窒化物半導体MOVPE成長における欠陥低減技術2019

    • Author(s)
      三宅秀人
    • Organizer
      応用物理学会東海支部基礎セミナー
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 窒化物半導体MOVPE成長における欠陥低減技術2019

    • Author(s)
      三宅秀人
    • Organizer
      応用物理学会東海支部基礎セミナー
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] ナノPSS上スパッタ堆積アニールAlN膜を基板に用いたホモエピ成長2019

    • Author(s)
      伊庭 由季乃、正直 花奈子、上杉 謙次郎、肖 世玉、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] ナノPSS上スパッタ堆積アニールAlN膜を基板に用いたホモエピ成長2019

    • Author(s)
      庭 由季乃、正直 花奈子、上杉 謙次郎、肖 世玉、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] ダイヤモンド基板上へのスパッタAlN成膜と高温アニール2019

    • Author(s)
      白土 達也、林 侑介、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] MOVPE Growth of AlGaN on High-Temperature Annealed Sputter Deposited AlN Templates2019

    • Author(s)
      K. Uesugi, K. Shojiki, Y. Hayashi, H. Miyake
    • Organizer
      Singularity Project Workshop of China-Korea-Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法と高温アニールによるa面サファイア上c面AlNの作製2019

    • Author(s)
      林 侑介、藤川 海人、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 近赤外波長変換に向けた+c AlN/-c AlN構造の作製2019

    • Author(s)
      林侑介、上杉 謙次郎、正直 花奈子、片山竜二、酒井朗、三宅 秀人
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Growth of Si-doped AlGaN on High-Temperature-Annealed MOVPE-Grown AlN Films on Vicinal Sapphire with Sputtered AlN Seed Layers2019

    • Author(s)
      S. Kuboya, Y. Tezen, K. Uesugi, K. Norimatsu, K. Shojiki, H. Miyake
    • Organizer
      4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] ストライプ溝サファイア基板上スパッタAlN膜のアニールとHVPEホモ成長2019

    • Author(s)
      西森大智、吉村一輝、肖世玉、正直花奈子, 三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] HVPE法による加工サファイア基板上のAlN成長2019

    • Author(s)
      藤倉 序章、今野 泰一郎、木村 健司、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Design of deep ultraviolet second harmonic generation device with double-layer polarity-inverted AlN waveguide2019

    • Author(s)
      A. Yamaguchi, T. Komatsu, K. Ikeda, K. Uesugi, K. Shojiki, H. Miyake, T. Hikosaka, S. Nunoue, T. Morikawa, Y. Fujiwara, T. Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium (EMS-38)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Internal quantum efficiency improvement by using annealed sputtered AlN template2019

    • Author(s)
      K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, and H. Miyake
    • Organizer
      Singularity Project Workshop of China-Korea-Japan
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 深紫外LED社会実装に向けた基板作製技術2019

    • Author(s)
      三宅秀人、正直花奈子、林侑介、 肖世玉、上杉謙次郎、永松謙太郎
    • Organizer
      結晶成長の科学と技術第161委員会第109回研究会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Fabrication of c-AlN/a-Sapphire Templates by Sputtering and High-Temperature Annealing2019

    • Author(s)
      Y. Hayashi, K. Fujikawa, K. Uesugi, K. Shojiki, H. Miyake
    • Organizer
      Compound Semiconductor Week 2019(CSW2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] MOVPE Growth on Sputtered Annealed AlN Film / Nano PSS2019

    • Author(s)
      Y. Iba, K. Shojiki, K. Uesugi, S. Xiao, H. Miyake
    • Organizer
      The International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Raman scattering evaluation of strain evolution during surface-activated bonding of GaN and removal of Si substrate2019

    • Author(s)
      R. Tanabe, N. Yokokawa, M. Uemukai, T. Hikosaka, S. Nunoue, K. Shojiki, H. Miyake, M. Kushimoto, H. J. Cheong, Y. Honda, H. Amano, and R. Katayama
    • Organizer
      38th Electronic Materials Symposium (EMS-38)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Input grating coupler for AlN channel waveguide wavelength conversion device2019

    • Author(s)
      Y. Morioka, M. Uemukai, K. Uesugi, K. Shojiki, H. Miyake, T. Morikawa, Y. Fujiwara, T. Tanikawa and R. Katayama
    • Organizer
      38th Electronic Materials Symposium (EMS-38)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールAlN/サファイア上へのAlGaN成長での歪み制御2019

    • Author(s)
      稲森 崇文、鈴木 涼矢、劉 小桐、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] RF-MBE法を用いた高品質AlN上へのInN成長2019

    • Author(s)
      橘秀紀,F.B.Abas,高林祐介,毛利真一郎,名西ヤスシ,荒木努,正直花奈子,三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Optical properties of AlGaN multiple quantum wells grown on n-AlGaN using sputter-deposited AlN templates2019

    • Author(s)
      K. Kawabata, S. Kuboya, K. Shojiki, K. Uesugi, H. Miyake
    • Organizer
      38th Electronic Materials Symposium (EMS-38)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Deep level luminescence of HVPE grown GaN by below-bandgap photo-excitation2019

    • Author(s)
      Daisuke Uehara, Moe Kikuchi, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitan
    • Organizer
      ICNS-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Functional metal-GaN micro-stripe structures for infrared and ultraviolet regions2019

    • Author(s)
      Tsubasa Yamakawa, Bojin Lin, Kensuke Oki, Bei Ma, Ken Morita, Yusuke Hayashi, Hideto Miyake, Kazuhiro Ohkawa
    • Organizer
      ICNS-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] RF-MBE InN Growth on High-Quality AlN Template2019

    • Author(s)
      Y. Takabayashi, H. Tachibana, F. B. Abs, S. Mouri, T. Araki, H. Miyake, K. Uesugi, K. Shojiki
    • Organizer
      13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] GaNの深い準位の直接光励起による発光特性の考察2019

    • Author(s)
      菊地 萌、上原 大輔、馬 ベイ、森田 健、三宅 秀人、石谷 善博
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] GaNの深い準位の直接光励起による発光特性の考察2019

    • Author(s)
      菊地 萌,上原大輔,馬 ベイ, 森田 健,三宅秀人,石谷善博
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Threading Dislocation Reduction of Sputter-deposited AlN/sapphire by High-Temperature Annealing2019

    • Author(s)
      H. Miyake, K. Shojiki, K. Uesugi, S. Xiao, H. Koizumi, S. Kuboya
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APSW2019)
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] アニール処理スパッタAlN膜とn型AlGaN下地層がAlGaN多重量子井戸構造の光学特性に与える影響2019

    • Author(s)
      正直花奈子, 石井良太, 上杉謙次郎, 船戸充, 川上養分一, 三宅秀人
    • Organizer
      第48回結晶成長国内会議(JCCG-48)
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] ラマン散乱による表面活性化接合前後のGaN薄膜中の歪変化の評価2019

    • Author(s)
      田辺 凌、小野寺 卓也、上向井 正裕、彦坂 年輝、布上 真也、正直 花奈子、三宅 秀人、久志本 真希、鄭 惠貞、本田 善央、天野 浩、片山 竜二
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールAlNテンプレート上AlGaN多重量子井戸のMOVPE成長2019

    • Author(s)
      河端 一輝、窪谷 茂幸、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールAlN/サファイア上へのAlGaN成長での歪み制御2019

    • Author(s)
      稲森 崇文、鈴木 涼矢、劉 小桐、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Crack-Free thick AlN Grown on μ-Cone Patterned Sapphire Substrates with Sputter-Deposited Annealed AlN film by Hydride Vapor-Phase Epitaxy2019

    • Author(s)
      S. Xiao, K. Shojiki, K. Uesugi, and H. Miyake
    • Organizer
      4th International Workshop on Ultraviolet Materials and Devices (IWUMD-IV)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 成長モード制御によるAlGaN下地層の高品質化とUV-Bレーザへの応用2019

    • Author(s)
      川瀬 雄太、池田 隼也、櫻木 勇介、安江 信次、手良村 昌平、田中 隼也、荻野 雄矢、岩谷 素顕、竹内 哲也、上山 智、岩山 章、赤﨑 勇、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Fabrication of high-quality AlN on sapphire by high-temperature annealing2019

    • Author(s)
      H. Miyake, K. Uesugi, S. Xiao, K. Shojiki, H. Koizumi, S. Kuboya
    • Organizer
      1st International Workshop on AlGaN based UV-Laser diodes, Berlin, Germany
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 2層極性反転積層AlN導波路を用いた深紫外第二高調波発生デバイスの設計2019

    • Author(s)
      山内 あさひ、小松 天太、池田 和久、上杉 謙二郎、正直 花奈子、三宅 秀人、彦坂 年輝、布上 真也、森川 隆哉、藤原 康文、上向井 正裕、谷川 智之、片山 竜二
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] ダイヤモンド基板上へのスパッタAlN成膜と高温アニール2019

    • Author(s)
      白土 達也、林 侑介、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] サファイア上AlN膜の高温アニールによる高品質化と深紫外LED開発2019

    • Author(s)
      三宅秀人, 正直花奈子, 肖世玉, 劉小桐, 岩山章, 上杉謙次郎, 窪谷茂幸, 小泉晴比古, 手銭雄太, 則松研二
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールしたスパッタ成膜AlNテンプレート上のAlGaN成長2019

    • Author(s)
      上杉 謙次郎、正直 花奈子、林 侑介、三宅 秀人, “
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] MOVPE成長AlN膜をアニールしたテンプレート上へのAlGaN成長2019

    • Author(s)
      窪谷茂幸、手銭 雄太、上杉 謙次郎、則松 研二、正直 花奈子、三宅 秀人
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 高温アニールしたスパッタ成膜AlNテンプレート上のAlGaN成長2019

    • Author(s)
      上杉 謙次郎、正直 花奈子、林 侑介、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Raman Scattering Investigation of Strain Evolution?during Surface-Activated Bonding of GaN and Removal of Si substrate2019

    • Author(s)
      R. Tanabe, T. Onodera, M. Uemukai, T. Hikosaka, S. Nunoue, K. Shojiki, H. Miyake, M. Kushimoto, H. Cheong, Y. Honda, H. Amano, R. Katayama
    • Organizer
      The International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 様々なAlNテンプレート上に形成した緩和AlGaN層に作製したUV-Bレーザー2019

    • Author(s)
      手良村 昌平、川瀬 雄太、池田 隼也、櫻木 勇介、安江 信次、田中 隼也、荻野 雄矢、岩谷 素顕、竹内 哲也、上山 智、岩山 章、赤﨑 勇、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 波長変換デバイスに向けたスパッタ成膜AlNの極性制御2019

    • Author(s)
      林 侑介、上杉 謙次郎、正直 花奈子、片山 竜二、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Analysis of emission characteristics of deep levels in GaN by direct photo excitation2019

    • Author(s)
      Moe Kikuchi, Daisuke Uehara, Bei Ma, Ken Morita, Hideto Miyake, and Yoshihiro Ishitani
    • Organizer
      Compound Semiconductor Week
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Focusing Grating Coupler for AlN Deep UV Waveguide SHG Device2019

    • Author(s)
      Y. Morioka, S. Yamaguchi, K. Shojiki, Y. Hayashi, H. Miyake, K. Shiomi, Y. Fujiwara, M. Uemukai, R. Katayama
    • Organizer
      The International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] High-Temperature Annealing of Sputter-Deposited AlN on Diamond Substrate2019

    • Author(s)
      T. Shirato, Y. Hayashi, K. Uesugi, K. Shojiki, H. Miyake
    • Organizer
      Compound Semiconductor Week 2019(CSW2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 深紫外発光素子応用に向けたスパッタ成膜AlNテンプレートの転位密度低2019

    • Author(s)
      上杉 謙次郎、林 侑介、正直 花奈子、永松 謙太郎、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] スパッタ法と高温アニールによるa面サファイア上c面AlNの作製2019

    • Author(s)
      林 侑介、藤川 海人、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 深紫外発光素子応用に向けたスパッタ成膜AlNテンプレートの転位密度低減2019

    • Author(s)
      上杉 謙次郎、林 侑介、正直 花奈子、永松 謙太郎、三宅 秀人
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] RF-MBE成長InNに対する熱処理の効果2019

    • Author(s)
      福田安莉,橘秀紀,高林祐介,後藤直樹, 毛利真一郎,名西?之,荒木努,正直花奈子,三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] AlN導波路第二高調波発生デバイスのための集光グレーティング結合器2019

    • Author(s)
      森岡 佳紀、上向井 正裕、上杉 謙次郎、正直 花奈子、三宅 秀人、森川 隆哉、藤原 康文、谷川 智之、片山 竜二
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ堆積AlNの高温固相成長とその基板上へのAlGaN成長2019

    • Author(s)
      三宅秀人, 上杉謙次郎, Shiyu Xiao, 正直花奈子
    • Organizer
      第48回結晶成長国内会議(JCCG-48)
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法により形成したサファイア上SiドープAlNの電気特性2019

    • Author(s)
      櫻井 悠也、上野 耕平、小林 篤、上杉 謙次郎、三宅 秀人、藤岡 洋
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ堆積アニールAlNテンプレート上へのMOVPE法ホモ成長2019

    • Author(s)
      川端心、正直花奈子, 上杉謙次郎, Xiaotong Liu, 三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] ラマン散乱分光法を用いたサファイア基板上AlN薄膜の局所的・異方的歪みの観測2019

    • Author(s)
      正直花奈子, 林侑介, 上杉謙次郎, 三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] “AlN光導波路型波長変換デバイスのための入力グレーティング結合器2019

    • Author(s)
      森岡 佳紀、山口 修平、正直 花奈子、林 侑介、三宅 秀人、塩見 圭史、藤原 康文、上向井 正裕、片山 竜二
    • Organizer
      第66 回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] MOVPE成長中の極性面AlN表面における吸着原子の安定性解析2019

    • Author(s)
      稲富悠也, 寒川義裕, 岩谷素顕, 三宅秀人
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] アニール処理スパッタAlN膜上AlGaN多重量子井戸構造の光学特性2019

    • Author(s)
      正直花奈子, 石井良太, 上杉謙次郎, 船戸充, 川上養分一, 三宅秀人
    • Organizer
      第11回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 深紫外LED社会実装に向けた基板作製技術2019

    • Author(s)
      三宅秀人、正直花奈子、林侑介、 肖世玉、上杉謙次郎、永松謙太郎
    • Organizer
      結晶成長の科学と技術第161委員会第109回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 高品質AlN上RF-MBE成長InNの極微構造評価2019

    • Author(s)
      荒木 努、橘 秀紀、高林 佑介、福田 安莉、毛利 真一郎、名西ヤスシ、正直 花奈子、三宅 秀人
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Reduction of Threading Dislocation Density in High-temperature Annealed AlN on Sapphire Templates2019

    • Author(s)
      H. Miyake, K. Shojiki, K. Uesugi, S. Xiao
    • Organizer
      19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19)
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] MOVPE Growth of AlGaN on High-Temperature Annealed Sputter Deposited AlN Templates2019

    • Author(s)
      K. Uesugi, K. Shojiki, Y. Hayashi, H. Miyake
    • Organizer
      13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Comparative Study of AlGaN Multiple Quantum Wells on Annealed Sputtered-AlN and MOVPE-Grown-AlN on Sapphire Substrates2019

    • Author(s)
      K. Shojiki, R. Ishii, K. Uesugi, M. Funato, Y. Kawakami, H. Miyake
    • Organizer
      13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Preparation of high-quality thick AlN layer on nano-patterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy2019

    • Author(s)
      S. Xiao, N. Jiang, K. Shojiki, K. Uesugi, H. Miyake
    • Organizer
      The International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA'19)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] サファイア上AlN膜の高温アニールによる高品質化と深紫外LED開発2019

    • Author(s)
      三宅秀人、正直花奈子、肖世玉、上杉謙次郎、小泉晴比古、窪谷茂幸
    • Organizer
      徳島大学ポストLEDフォトニクス公開シンポジウム2019~深紫外LEDの可能性と生み出す未来~
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法AlN膜の高温アニールとその基盤上へのAlGaN深紫外LED作製2018

    • Author(s)
      永松謙太郎・上杉謙次郎・正直花奈子・吉田治正・三宅秀人
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 二層型ワイヤーグリッド構造における伝搬型表面プラズモンの伝搬特性に関する研究2018

    • Author(s)
      渡邊直也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Preparation of high-quality thick AlN layer on sputtered and annealed nano-patterned sapphire substrates by hydride vapor-phase epitaxy2018

    • Author(s)
      . Xiao, N. Jiang, K. Shojiki, K. Uesugi, H. Miyake
    • Organizer
      International Workshop on UV Materials and Devices
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 6H-SiC基板上におけるAlN周期構造の作製と評価2018

    • Author(s)
      上杉 謙次郎, 正直 花奈子, 林 侑介, 肖 世玉, 永松 謙太郎, 吉田 治正, 三宅 秀人
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Polarity Inversion of AlN by Sputtering Condition Control for DUV-SHG Devices2018

    • Author(s)
      Y. Hayashi, K. Uesugi, K. Shojiki, H. Miyake
    • Organizer
      IWN2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing2018

    • Author(s)
      K. Shojiki, X. Liu, S. Kawai, H. Miyake
    • Organizer
      Compound Semiconductor Week
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Thermal Stress Analysis of AlN/sapphire Templates Fabricated by Sputtering and High Temperature Annealing2018

    • Author(s)
      Y. Hayashi, K. Uesugi, K. Tanigawa, S. Tanaka, K. Shojiki, and H. Miyake
    • Organizer
      MRS Fall Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 焦点制御型回折レンズの作製と集光特性評2018

    • Author(s)
      加藤 亮、元垣内 敦司、三宅秀人、平松和政
    • Organizer
      平成30年度照明学会東海支部若手セミナー
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agワイヤーグリッド構造を用いたプラズモニック波長板の作製に関する研究2018

    • Author(s)
      渡邊 陽生、元垣内 敦司、三宅秀人、平松和政
    • Organizer
      平成30年度照明学会東海支部若手セミナー
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 波長許容幅拡大を目指した横型擬似位相整合AlNテーパ導波路SHGデバイスの設計2018

    • Author(s)
      山口 修平、山内 あさひ、上向井 正裕、林 侑介、三宅 秀人、塩見 圭史、藤原 康文、片山 竜二
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] カソードルミネッセンス法によるAlGaN多重量子井戸構造の転位近傍の局所発光2018

    • Author(s)
      倉井聡 井村暢杜 Li Jin 三宅秀人 平松和政 山田陽一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] Homoepitaxy of AlN on annealed AlN/sapphire template2018

    • Author(s)
      H. Miyake, K. Shojiki, X. Liu, Y. Hayashi, X. Shiyu, K. Uesugi
    • Organizer
      The 7th International Symposium on Growth of III-Nitrides(ISGN-7)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Spatially resolved cathodoluminescence on dot-like high-energy emissions near threading dislocations in AlGaN multiple quantum wells2018

    • Author(s)
      S. Kurai, N. Imura, L. Jin, H. Miyake, K. Hiramatsu, and Y. Yamada
    • Organizer
      International Workshop on Nitride Semiconductors 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] スパッタ条件制御による-c/+c 極性反転AlN 構造の作製2018

    • Author(s)
      林 侑介、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Polarity Inversion of AlN by Sputtering Condition Control for DUV-SHG Devices2018

    • Author(s)
      Hayashi, K. Uesugi, K. Shojiki, H. Miyake
    • Organizer
      IWUMD2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] High-temperature annealing of sputter-deposited AlN films on sapphire2018

    • Author(s)
      H. Miyake, K. Shojiki, Y. Hayashi, S. Xiao, K. Uesugi, K. Nagamatsu
    • Organizer
      International Workshop on UV Materials and Devices
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Fabrication of high-quality AlN template by high-temperature annealing2018

    • Author(s)
      H. Miyake, K. Shojiki, Y. Hayashi, X. Shiyu, K. Uesugi, K. Nagamatsu
    • Organizer
      Japanese-Polish Workshop on Crystal Science
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] スパッタ条件制御による-c/+c 極性反転AlN 構造の作製2018

    • Author(s)
      林 侑介、上杉 謙次郎、正直 花奈子、三宅 秀人
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Bowing Control of Sputtered AlN Caused by High Temperature Annealing2018

    • Author(s)
      Y. Hayashi, K. Tanigawa, K. Shojiki, H. Miyake
    • Organizer
      ICMOVPE-XIX
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] スパッタ法AlN膜の高温アニールとその基板上へのAlGaN深紫外LED作製2018

    • Author(s)
      永松 謙太郎、上杉 謙次郎、正直 花奈子、吉田 治正、三宅 秀人
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 歪緩和による深紫外LEDの発光効率改善2018

    • Author(s)
      永松 謙太郎、上杉 謙次郎、三宅 秀人、吉田 治正
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Preparation of high-quality thick AlN layer on sputtered and annealed nano-patterned sapphire substrates by hydride vapor-phase epitaxy2018

    • Author(s)
      S. Xiao, N. Jiang, K. Shojiki, K. Uesugi, H. Miyake
    • Organizer
      IWUMD2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] AlGaN/アニール処理スパッタAlNテンプレート上に作製した紫外レーザ2018

    • Author(s)
      川瀬 雄太、池田 隼也、櫻木 勇介、安江 信次、岩山 章、金 明姫、岩谷 素顕、竹内 哲也、上山 智 、赤﨑 勇、三宅 秀人
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] カソードルミネッセンスマッピング法によるAlGaN量子井戸構造の局所発光評価2018

    • Author(s)
      LI JIN 井村暢杜 倉井聡 三宅秀人 平松和政 山田陽一
    • Organizer
      2018年度応用物理学会中国四国支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] Characterization of strain relaxation behavior of annealed sputter deposited AlN films on SiC substrates2018

    • Author(s)
      K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, H. Yoshida, H. Miyake
    • Organizer
      ICMOVPE-XIX
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの作製及び感度評価2018

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 深紫外LED実用化の鍵となる基板作製技術2018

    • Author(s)
      三宅秀人・正直花奈子・林侑介・肖世玉・上杉謙次郎・永松謙太郎
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法AlN膜の高温アニールとその基板上へのAlGaN深紫外LED作製2018

    • Author(s)
      永松 謙太郎、上杉 謙次郎、正直 花奈子、吉田 治正、三宅 秀人
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 『AlNテンプレート高品質化の進展』~深紫外LED実用化の鍵となる基板作製技術~2018

    • Author(s)
      三宅秀人・正直花奈子・林侑介・肖世玉・上杉謙次郎・永松謙太郎
    • Organizer
      学振第162委員会 第110回研究会・特別公開シンポジウム
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Anisotropic strain in AlN film on sapphire substrate2018

    • Author(s)
      K. Shojiki, K. Uesugi, K. Fujikawa, Y. Hayashi, S. Xiao, H. Miyake
    • Organizer
      IWN2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Crystal quality improvement of sputter-deposited AlN films on SiC substrates by high temperature annealing2018

    • Author(s)
      K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, K. Nagamatsu, H. Yoshida, H. Miyake,
    • Organizer
      he 7th International Symposium on Growth of III-Nitrides(ISGN-7)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Fabrication of High-Quality AlN on Sapphire for Deep UV LED2018

    • Author(s)
      H. Miyake, S. Xiao, Y. Hayashi, K. Shojiki
    • Organizer
      Taiwan Solid State Lighting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 高温アニールしたAlNのクラック抑制と高品質化2018

    • Author(s)
      上杉 謙次郎、林 侑介、正直 花奈子、永松 謙太郎、吉田 治正、三宅 秀人
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] High-temperature annealing of sputter-deposited AlN films on sapphire2018

    • Author(s)
      H. Miyake, K. Shojiki, Y. Hayashi, S. Xiao, K. Uesugi, K. Nagamatsu
    • Organizer
      IWUMD2018
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Reduction of threading dislocation density and suppression of cracking for sputter-deposited high-temperature annealed AlN films2018

    • Author(s)
      . Uesugi, Y. Hayashi, K. Shojiki, K. Nagamatsu, H. Yoshida, H. Miyake
    • Organizer
      International Workshop on UV Materials and Devices
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Fabrication of High-quality AlN Template by High Temperature Annealing2018

    • Author(s)
      H. Miyake
    • Organizer
      InRel-NPower
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Bowing Control of Sputtered AlN Caused by High Temperature Annealing2018

    • Author(s)
      Y. Hayashi, K. Tanigawa, K. Shojiki, H. Miyake
    • Organizer
      ICMOVPE-XIX
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] haracterization of strain relaxation behavior of annealed sputter deposited AlN films on SiC substrates2018

    • Author(s)
      K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, H. Yoshida, H. Miyake
    • Organizer
      ICMOVPE-XIX
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 高温アニールしたAlNのクラック抑制と高品質化2018

    • Author(s)
      上杉 謙次郎、林 侑介、正直 花奈子、永松 謙太郎、吉田 治正、三宅 秀人
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] “Anisotropic strain in AlN film on sapphire substrate2018

    • Author(s)
      K. Shojiki, K. Uesugi, K. Fujikawa, Y. Hayashi, S. Xiao, H. Miyake
    • Organizer
      IWUMD2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Preparation of high-quality thick AlN on sputtered and annealed nano-patterned sapphire substrates by hydride vapor-phase epitaxy2018

    • Author(s)
      S. Xiao, N. Jiang, K. Shojiki, K. Uesugi, H. Miyake
    • Organizer
      IWN2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Plasma activated bonding of 2-inch sputtered AlN wafers2018

    • Author(s)
      Y. Hayashi, H. Miyake
    • Organizer
      MRS Spring Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Plasma activated bonding of 2-inch sputtered AlN wafers2018

    • Author(s)
      Y. Hayashi, H. Miyake
    • Organizer
      MRS Spring Meeting
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 歪緩和による深紫外LEDの発光効率改善2018

    • Author(s)
      永松 謙太郎、上杉 謙次郎、三宅 秀人、吉田 治正
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Crystalline quality improvement and suppression of cracking for sputter-deposited high-temperature annealed AlN films by stress control2018

    • Author(s)
      K. Uesugi1, Y. Hayashi, K. Shojiki, K. Nagamatsu, H. Yoshida, H. Miyake
    • Organizer
      IWN2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Fabrication of High-quality AlN Template by High Temperature Annealing2018

    • Author(s)
      H. Miyake
    • Organizer
      InRel-NPower
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 深紫外LED実用化の鍵となる基板作製技術2018

    • Author(s)
      三宅秀人、正直花奈子、林侑介、肖世玉、上杉謙次郎、永松謙太郎
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] 表面活性化接合を用いた大面積GaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也、上向井 正裕、髙橋 一矢、岩谷 素顕、赤﨑 勇、林 侑介、三宅 秀人、久志本 真希、鄭 惠貞、本田 善央、天野 浩、片山 竜二
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 6H-SiC基板上におけるAlN周期構造の作製と評価2018

    • Author(s)
      上杉 謙次郎, 正直 花奈子, 林 侑介, 肖 世玉, 永松 謙太郎, 吉田 治正, 三宅 秀人
    • Organizer
      第10回ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Agワイヤーグリッド構造を用いたプラズモニック波長板の設計と作製に関する研究2018

    • Author(s)
      渡邊 陽生、元垣内 敦司、三宅 秀人、平松 和政
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] スパッタ法AlN膜の高温アニールとその基盤上へのAlGaN深紫外LED作製2018

    • Author(s)
      永松謙太郎・上杉謙次郎・正直花奈子・吉田治正・三宅秀人
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Crystal quality improvement of sputter-deposited AlN films on SiC substrates by high temperature annealing2018

    • Author(s)
      K. Uesugi, Y. Hayashi, K. Shojiki, S. Xiao, K. Nagamatsu, H. Yoshida, H. Miyake
    • Organizer
      ISGN-7
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] 焦点制御型回折レンズの位相シフトと集光特性の関係2018

    • Author(s)
      加藤 亮、元垣内 敦司、三宅 秀人、平松 和政
    • Organizer
      第79回応用物理学会秋季学術講演会シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Homoepitaxy of AlN on annealed AlN/sapphire template2018

    • Author(s)
      H. Miyake, K. Shojiki, X. Liu, Y. Hayashi, X. Shiyu, K. Uesugi
    • Organizer
      ISGN-7
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] AlGaN量子井戸構造の高温領域における発光特性2018

    • Author(s)
      赤松勇紀 池田和貴 藤原涼太 久永桂典 田邉凌平 室谷英彰 倉井聡 三宅秀人 平松和政 山田陽一
    • Organizer
      2018年度応用物理学会中国四国支部学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] Crystalline quality improvement and suppression of cracking for sputter-deposited high-temperature annealed AlN films by stress control2018

    • Author(s)
      K. Uesugi1, Y. Hayashi, K. Shojiki, K. Nagamatsu, H. Yoshida, H. Miyake
    • Organizer
      IWUMD2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Fabrication of high-quality AlN template by high-temperature annealing2018

    • Author(s)
      H. Miyake, K. Shojiki, Y. Hayashi, X. Shiyu, K. Uesugi, K. Nagamatsu
    • Organizer
      Japanese-Polish Workshop on Crystal Science
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Fabrication of High-Quality AlN Template on Sapphire Using High-Temperature Annealing2018

    • Author(s)
      K. Shojiki, X. Liu, S. Kawai, H. Miyake
    • Organizer
      Compound Semiconductor Week
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Preparation of high-quality thick AlN on sputtered and annealed nano-patterned sapphire substrates by hydride vapor-phase epitaxy2018

    • Author(s)
      S. Xiao, N. Jiang, K. Shojiki, K. Uesugi, H. Miyake
    • Organizer
      IWUMD2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H02772
  • [Presentation] Fabrication of High-Quality AlN on Sapphire for Deep UV LED2018

    • Author(s)
      H. Miyake, S. Xiao, Y. Hayashi, K. Shojiki
    • Organizer
      Taiwan Solid State Lighting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06415
  • [Presentation] Temperature dependence of Stokes shift of excitons and biexcitons in Al0.61Ga0.39N epitaxial layers2017

    • Author(s)
      H. Murotani, K. Ikeda, T. Tsurumaru, R. Fujiwara, S. Kurai, H. Miyake, K. Hiramatsu, and Y. Yamada
    • Organizer
      12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] Au 2次元回折格子構造による光学素子の作製と光学特性評価2017

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市民観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] nvestigation of the sputtered AlN films qualitative improvement process by high- temperature annealing2017

    • Author(s)
      Shi-yu Xiao, Yi-kang Liu, Hideto Miyake, Kazumasa Hiramatsu, Shunta Harada, Toru Ujihara
    • Organizer
      The 12th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] サファイア基板上AlNテンプレートの高温アニール2017

    • Author(s)
      三宅 秀人、林 侑介、Shiyu Xiao
    • Organizer
      第46回結晶成長国内会議
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Temperature dependence of excitonic transitions in deep ultraviolet emitting AlGaN multiple quantum wells2017

    • Author(s)
      H. Murotani, Y. Hayakawa, H. Miyake, K. Hiramatsu, and Y. Yamada
    • Organizer
      International Workshop on UV Materials and Devices 2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] 溝加工(10-10)GaN基板上へのGaN選択横方向成長2017

    • Author(s)
      岡田 俊祐、岩生 浩季、三宅 秀人、平松 和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] スパッタ法AlN基板へのMOVPE法によるホモ成長2017

    • Author(s)
      吉澤 涼、林 侑介、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] スパッタ法AlN膜の高温アニールとHVPE法によるホモエピ成長2017

    • Author(s)
      劉 怡康、三宅 秀人、平松 和政、岩谷 素顕、赤﨑 勇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの光学特性及び感度評価2017

    • Author(s)
      伊藤 優佑、元垣内 敦司、三宅 秀人、平松 和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] AlGaN系量子井戸構造における励起子系発光特性の温度依存性2017

    • Author(s)
      早川裕也 室谷英彰 三宅秀人 平松和政 山田陽一
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] バイナリ構造を用いた焦点制御型回折レンズの作製と特性評価2017

    • Author(s)
      元垣内敦司、井口陽介、加藤秀治、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Study of curvature during thermal annealing of AlN on sapphire2017

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Fabrication and characterization of a binary diffractive lens for controlling the focal length and depth of focus2017

    • Author(s)
      Atsushi Motogaito, Yousuke Iguchi, Shuji Kato, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 22nd Microoptics Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agを用いた二層型ワイヤーグリッド構造の周期と波長の依存性2017

    • Author(s)
      渡邊直也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] The Sensor Characteristics of Surface Plasmon Sensor using the 1D Metal Diffraction Grating2017

    • Author(s)
      Yusuke Ito, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 11th Asia-Pacific Conference on Near Field Optics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Effect of Thermal Annealing on AlN Films Grown on Sputtered AlN Templates2017

    • Author(s)
      Ryo Yoshizawa, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
    • Place of Presentation
      中部大学(愛知県・春日井市)
    • Year and Date
      2017-03-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] スパッタ法で成膜したr面サファイア基板上a面AlNの高品質化2017

    • Author(s)
      福田 涼、山木 佑太、林 侑介、三宅 秀人、平松 和政
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Face to Face 高温アニールで生じるAlN膜内歪の定量的評価2017

    • Author(s)
      谷川健太朗、鈴木涼矢、岩山章、林侑 介、三宅秀人、平松和政
    • Organizer
      第46回結晶成長国内会議
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] The study of high-temperature annealing process of sputtered AlN films2017

    • Author(s)
      S. Xiao, Y. Liu, H. Miyake, K. Hiramatsu, S. Harada, and T. Ujihara
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] MOVPE法によるAlN膜のface-to-faceアニール2017

    • Author(s)
      田中 襲一、岡田 俊祐、林 侑介、三宅 秀人、平松 和政
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agを用いた二層型ワイヤーグリッド構造の入射角度依存性2017

    • Author(s)
      渡邊 直也、元垣内 敦司、三宅 秀人、平松 和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Face to Face法アニールによる AlN極性反転構造の作製と疑似位相整合 SHGへの応用2017

    • Author(s)
      林 侑介、三宅秀人、平松和政、秋山 亨、伊藤智徳、片山竜二
    • Organizer
      電子情報通信学会 電子デバイス研究会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017

    • Author(s)
      林 侑介、三宅 秀人、平松 和政、片山 竜二
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] スパッタ法を用いたサファイア基板上へのAlN堆積2017

    • Author(s)
      山木 佑太、岩山 章、三宅 秀人、平松 和政、小松 永治、寺山 暢之
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] MOVPE法によるAlN成長における窒化温度の影響2017

    • Author(s)
      河合 祥也、三宅 秀人、平松 和政
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 表面プラズモンを用いたワイヤーグリッド偏光子の偏光特性評価に関する研究2017

    • Author(s)
      中嶋智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市民観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの 周期及び入射角度依存性と感度特性2017

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 光エレクトロニクス研究会
    • Place of Presentation
      伊勢市民観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Excitation Mechanism of Surface Plasmon Polaritons in a Double-Layer Wire Grid Structure2017

    • Author(s)
      Atsushi Motogaito, Tomoyasu Nakajima, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 11th Asia-Pacific Conference on Near Field Optics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの感度評価2017

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Face to Face アニールによる AlN 分極反転構造の作製と評価2017

    • Author(s)
      林 侑介、三宅 秀人、 平松 和政、 片山 竜二
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] The controlling of transmittance and reflectance of a 2D metal periodic grating structure for cold filter application2016

    • Author(s)
      Atsushi Motogaito, Masanori Kito, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      JSAP-OSA Joint Symposia
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Al0.61Ga0.39N混晶薄膜における励起子および励起子分子のストークスシフトの温度依存性2016

    • Author(s)
      池田和貴 室谷英彰 鶴丸拓斗 藤原涼太 倉井聡 三宅秀人 平松和政 山田陽一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-14
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] アニール処理AlN下地層上AlGaN/AlN-MQWの光学特性2016

    • Author(s)
      袴田 淳哉、草深 敏匡、千賀 崇史、岩谷 素顕、竹内 哲也、上山 智、三宅 秀人、赤崎 勇
    • Organizer
      第63回応用物理学会秋季学術講演会
    • Place of Presentation
      東京/日本
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Effect of AlN Buffer Layer Thickness on Crystallinity and Surface Morphology of 10-μm-Thick A-Plane AlN Films Grown on R-Plane Sapphire Substrates2016

    • Author(s)
      Chia-Hung Lin, Shinya Tamaki, Yasuhiro Yamashita, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando (USA)
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Agを用いた二層型ワイヤーグリッド構造の光学特性評価2016

    • Author(s)
      渡邊直也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会ナノオプティクス研究グループ 第23回研究討論会
    • Place of Presentation
      大阪大学吹田キャンパス(大阪府・吹田市)
    • Year and Date
      2016-11-28
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Relationship between Space Control and Optical Properties of a Double-layer Surface Plasmon Wire Grid Polariser2016

    • Author(s)
      T. Nakajima, A. Motogaito, H. Miyake, K. Hiramatsu
    • Organizer
      The 14th International Conference on Near-field Optics, Nanophotonics, and Related Techniques
    • Place of Presentation
      アクトシティ浜松コングレスセンター(静岡県・浜松市)
    • Year and Date
      2016-09-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] r面サファイア上へのa面AlN成長におけるバッファ層厚さ依存性2016

    • Author(s)
      林 家弘、玉置 真哉、山下 泰弘、三宅 秀人、平松 和政
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Effect of buffer-layer growth temperature and thermal annealing conditions on a-plane AlN films grown on r-plane sapphire2016

    • Author(s)
      C.-H. Lin, Y. Yamashita, H. Miyake, K. Hiramatsu
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] サブ波長構造を有するAu2次元回折格子の作製と光学特性評価2016

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] r 面サファイア上への a 面 AlN 成長におけるバッファ層の成長温度およびバッファ層アニール条件依存性2016

    • Author(s)
      林 家弘 、山下 泰弘 、三宅 秀人、平松 和政
    • Organizer
      第8回 窒化物半導体結晶成長講演会
    • Place of Presentation
      京都大学桂キャンパス ローム記念館(京都府・京都市)
    • Year and Date
      2016-05-09
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] AlGaN量子井戸構造における励起子分子の結合エネルギー―混晶障壁層の組成比依存性(2)―2016

    • Author(s)
      和泉平 福地駿平 井村暢杜 倉井聡 室谷英彰 三宅秀人 平松和政 山田陽一
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-14
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] Growth of GaN on trench patterned non-polar bulk GaN substrates2016

    • Author(s)
      S. Okada, H. Iwai, H. Miyake, K. Hiramatsu
    • Organizer
      The 18th International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Au2次元回折格子による光学ミラーの作製と光学特性評価2016

    • Author(s)
      山田泰士、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2016-10-31
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] AlGaN多重量子井戸成長におけるAlNバッファ層の効果2016

    • Author(s)
      藤田直宏、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] AlN成長のための空気中アニールによるc面サファイアの原子ステップ形成2016

    • Author(s)
      玉置真哉、鈴木周平、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] RF加熱式HVPE法を用いたサファイア基板上へのAlN成長2016

    • Author(s)
      山下泰弘、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの周期及び入射角度依存性2016

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた表面プラズモンセンサーの光学特性評価2016

    • Author(s)
      伊藤優佑、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会ナノオプティクス研究グループ 第23回研究討論会
    • Place of Presentation
      大阪大学吹田キャンパス(大阪府・吹田市)
    • Year and Date
      2016-11-28
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] ワイヤーグリッド構造における表面プラズモン 分散曲線と透過率マッピング2016

    • Author(s)
      中嶋智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2016-10-31
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Fabrication of High-Quality AlN Template on Sapphire by HighTemperature Annealing2016

    • Author(s)
      Hideto Miyake, Chia-Hung Lin, Yikang Liu and Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando (USA)
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells2016

    • Author(s)
      T. Izumi, S. Fukuchi, N. Imura, H. Murotani, H. Miyake, K. Hiramatsu, and Y. Yamada
    • Organizer
      International Workshop on Nitride Semiconductors 2016
    • Place of Presentation
      Orlando (USA)
    • Year and Date
      2016-10-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04335
  • [Presentation] 2層型ワイヤーグリッド偏光子の空間制御と光学特性評価2016

    • Author(s)
      中嶋智康、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Detecting High-refractive-index (n>1.5) Media using Surface Plasmon Sensor with One-dimensional Au Diffraction Grating on Glass Substrate2016

    • Author(s)
      Atsushi Motogaito, Shinya Mito, HidetoMiyake and Kazumasa Hiramatsu
    • Organizer
      Light, Energy and the Environment Congress
    • Place of Presentation
      Leipzig (Germany)
    • Year and Date
      2016-11-14
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Structural Study of GaN Grown on Nonpolar Bulk GaN Substrates with Trench Patterns2016

    • Author(s)
      Shunsuke Okada, Hiroki Iwai, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors
    • Place of Presentation
      Orlando (USA)
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] r面サファイア上へのa面AlN成長におけるバッファ層成長温度依存性2016

    • Author(s)
      林家弘、三宅秀人、平松和政
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス(東京都・目黒区)
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 一次元金属回折格子を用いた伝搬型表面プラズモンセンサーによる高屈折率媒質の検出(Ⅱ)2015

    • Author(s)
      水戸慎也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application2015

    • Author(s)
      A. Motogaito, M. Kito, H. Miyake and K. Hiramatsu
    • Organizer
      SPIE Micro+Nano Materials, Devices, and Systems
    • Place of Presentation
      Sydney(Australia)
    • Year and Date
      2015-12-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Growth of high-quality AlN on sapphire using annealing technique2015

    • Author(s)
      H. Miyake, S. Tamaki, D. Yasui, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
    • Organizer
      9th International Workshop on Bulk Nitride Semiconductors
    • Place of Presentation
      韓国
    • Year and Date
      2015-11-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] RF加熱式HVPE法を用いたAlN成長2015

    • Author(s)
      安井, 三宅, 平松, 岩谷, 赤崎, 天野
    • Organizer
      応用物理学会SC東海地区学術講演会2015
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-11-14
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE法によるサファイア上AlN成長における界面制御2015

    • Author(s)
      鈴木, 林, 三宅, 平松, 福山
    • Organizer
      応用物理学会SC東海地区学術講演会2015
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-11-14
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 2層型2次元金属回折格子の作製とフィルター特性評価2015

    • Author(s)
      元垣内敦司、鬼頭壮宜、三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] ±c面GaNの表面熱的安定性に関する研究2015

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、逢坂崇、谷川智之、松岡隆志
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Influence of Thermal Cleaning on the Surface of Free-Standing GaN Substrates2015

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West Convention Center, San Francisco, California
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] 微傾斜角度の異なるc面サファイア基板上へのAlN成長とN2-COアニール2015

    • Author(s)
      鈴木周平、林家弘、三宅秀人、平松和政、福山博之
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪市立大学(大阪府・大阪市)
    • Year and Date
      2015-11-26
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] r面サファイア上へのa面AlN成長における基板の前処理効果2015

    • Author(s)
      林, 安井, 玉置, 三宅, 平松
    • Organizer
      第7回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学
    • Year and Date
      2015-05-08
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] r面サファイア上へのa面AlN成長におけるバッファ層アニール効果2015

    • Author(s)
      林家弘、安井大貴、玉置真哉、三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Transmission of the Double-layer Wire Grid Polarizer and its Dependence on the Incident Angle and the Periodical Structures2015

    • Author(s)
      A. Motogaito, Y. Morishita, H. Miyake and K. Hiramatsu
    • Organizer
      JSAP-OSA Joint Symposia
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Fabrication of high-quality AlN on sapphire using annealing in a carbon-saturated N2-CO mixture2015

    • Author(s)
      H. Miyake, S. Suzuki, G. Nishio, K. Hiramatsu, H. Fukuyama
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices -2015 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      京都
    • Year and Date
      2015-07-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth of AlN layer on sputtered AlN template substrate by hydride vapor phase epitaxy2015

    • Author(s)
      S. Tamaki, D. Yasui, H. Miyake, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
    • Organizer
      APWS2015
    • Place of Presentation
      ソウル 韓国
    • Year and Date
      2015-05-17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 一次元金属回折格子を用いた伝搬型表面プラズモンセンサーによる高屈折率媒質の検出2015

    • Author(s)
      水戸慎也、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-13
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Temperature dependence on AlN buffer layer in N2-CO ambient2015

    • Author(s)
      S. Suzuki, H. Miyake, K. Hiramatsu, H. Fukuyama
    • Organizer
      2015 MRS Spring meeting & exhibit
    • Place of Presentation
      San Francisco
    • Year and Date
      2015-04-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 微傾斜角度の異なるc面サファイア基板上へのAlN成長とN2-COアニール2015

    • Author(s)
      鈴木, 林, 三宅, 平松, 福山
    • Organizer
      電子情報通信学会技術研究報告ED2015-69
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2015-11-26
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア微傾斜角度の影響2015

    • Author(s)
      鈴木周平、林家弘、三宅秀人、平松和政、福山博之
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] AlN/Sapphire基板を用いたRF加熱式HVPEによるAlN成長2015

    • Author(s)
      安井, 三宅, 平松, 岩谷, 赤崎, 天野
    • Organizer
      電子情報通信学会技術研究報告ED2015-70
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2015-11-26
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Influences of NH3 nitridation on the crystal quality of a-plane AlN grown onr-plane sapphire substrates2015

    • Author(s)
      Chia-Hung Lin, D. Yasui, S. Tamaki, H. Miyake, K. Hiramatsu
    • Organizer
      ISGN-6
    • Place of Presentation
      浜松
    • Year and Date
      2015-11-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア表面の影響2015

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] スパッタ法AlNテンプレート基板を用いたAlNのHVPE成長2015

    • Author(s)
      安井大貴、三宅秀人、平松和政、岩谷素顕、赤﨑勇、天野浩
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] r面サファイア上へのa面AlIN成長におけるバッファ層アニール効果2015

    • Author(s)
      林, 安井, 玉置, 三宅, 平松
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Detecion of high-refractive index media by a surface plasmon sensor using a one dimensional metal diffraction grating2015

    • Author(s)
      S.Mito, A.Motogaito, H.Miyake and K.Hiramatsu
    • Organizer
      The 20th MICROOPTICS CONFERENCE
    • Place of Presentation
      福岡国際会議場(福岡県・福岡市)
    • Year and Date
      2015-10-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] サファイア上への窒化物半導体エピタキシーにおける界面制御2015

    • Author(s)
      三宅秀人、平松和政
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Stady on surface thermal stability of free-standing GaN substrates2015

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      ISPlasma2015
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-03-28
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] CO-N2熱処理法を用いたサファイア基板上への高品質AlN薄膜作製と応用展開2015

    • Author(s)
      三宅, 鈴木, 林, 平松, 福山
    • Organizer
      応用物理学会結晶工学分科会 第143回研究会
    • Place of Presentation
      東京都市大学
    • Year and Date
      2015-06-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Annealing Effects on the Microstructure of Aluminum Nitride Buffer Layer MOVPE-Grown on Sapphire Substrate2015

    • Author(s)
      Jesbains Kaur, N. Kuwano, J. Fukuda, Y. Soejima, M. Mitsuhara, S. Suzuki, H. Miyake, K. Hiramatsu, and H. Fukuyama
    • Organizer
      The 3th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Place of Presentation
      横浜
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Optimization of Growth Conditions for A-Plane AlN on R-Plane Sapphire2015

    • Author(s)
      C.-H. Lin,S. Suzuki,H. Miyake and K. Hiramatsu
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West Convention Center, San Francisco, California
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア表面の影響2015

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 高品質AlN結晶成長技術と深紫外デバイスへの応用展開2015

    • Author(s)
      三宅, 鈴木, 林, 平松, 福山
    • Organizer
      日本フォトニクス協議会 産業用LED 応用研究会&JPC 紫外線研究会
    • Place of Presentation
      東京理科大学
    • Year and Date
      2015-06-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア微傾斜角度の影響2015

    • Author(s)
      鈴木周平、林家弘、三宅秀人、平松和政、福山博之
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlN/Sapphire基板を用いたRF加熱式HVPEによるAlN成長2015

    • Author(s)
      安井大貴、三宅秀人、平松和政、岩谷素顕、赤﨑勇、天野浩
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪市立大学(大阪府・大阪市)
    • Year and Date
      2015-11-26
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] HVPE Growth of Thick AlN on AlN/Sapphire2015

    • Author(s)
      H. Miyake, S. Tamaki, D. Yasui, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
    • Organizer
      Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors
    • Place of Presentation
      福岡
    • Year and Date
      2015-08-20
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Temperature Dependence on AlN Buffer Layer in N2-CO Ambient2015

    • Author(s)
      S. Suzuki,H. Miyake,K. Hiramatsu and H. Fukuyama
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West Convention Center, San Francisco, California
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Stady on surface thermal stability of free-standing GaN substrates2015

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      ISPlasma 2015
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-03-28
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] AlN growth on sputtering AlN template substrate by hydride vapor phase epitaxy2015

    • Author(s)
      D. Yasui, S. Tamaki, H. Miyake, K. Hiramatsu, M. Iwaya, I. Akasaki, H. Amano
    • Organizer
      The 3th International Conference on Light-Emitting Devices and Their Industrial Applications
    • Place of Presentation
      横浜
    • Year and Date
      2015-04-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Ag細線構造を用いた二層型ワイヤーグリッド偏光子の光学特性2015

    • Author(s)
      辻村一希、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス(東京都・文京区)
    • Year and Date
      2015-10-28
    • Data Source
      KAKENHI-PROJECT-15H03556
  • [Presentation] Impact of high-temperature annealing of AlN layer on sapphire and itsthermodynamic principle2015

    • Author(s)
      Hiroyuki Fukuyama, Hideto Miyake, Gou Nishio, Shuhei Suzuki, Kazumasa Hiramatsu
    • Organizer
      The 6th International Symposium on Growth of III-Nitrides(ISGN-6)
    • Place of Presentation
      アクトシティ浜松(静岡県浜松市)
    • Year and Date
      2015-11-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] HVPE法AlN成長条件のシミュレーションによる検討2014

    • Author(s)
      安井大貴、三宅秀人、平松和政、河村貴宏
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Study of AlN growth conditions for hydride vapor phase epitaxy2014

    • Author(s)
      D. Yasui, H. Miyake, K. Hiramatsu and T. Kawamura
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN growth on carbonized-Si substrate by MOVPE2014

    • Author(s)
      K. Izumi, H. Miyake, K. Hiramatsu, H. Oku, H. Asamura and K. Kawamura
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Influence of thermal cleaning on free-standing GaN surface2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      第33回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2014-07-10
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 光学フィルタへの応用に向けた金属2次元回折格子構造の作製と光学特性評価2014

    • Author(s)
      鬼頭壮宜、元垣内敦司、三宅秀人、平松和政
    • Organizer
      電子情報通信学会光エレクトロニクス研究会
    • Place of Presentation
      機械振興会館
    • Year and Date
      2014-12-18
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] HVPE Homoepitaxy on Freestanding AlN Substrate with Trench Pattern2014

    • Author(s)
      Y. Watanabe、H. Miyake、K. Hiramatsu, Y. Iwasaki and S. Nagata
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, USA
    • Year and Date
      2014-05-19
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] MOVPE growth of AlN and AlGaN multiple-quantum wells on sapphire for electron-beam-excitation UV light source2014

    • Author(s)
      H. Miyake, G. Nishio, S. Suzuki, F. Fukuyo*, K. Hiramatsu, H. Yoshida, Y. Kobayashi, H. Fukuyama, Y. Tokumoto
    • Organizer
      International Conference on Metamaterials and Nanophysics
    • Place of Presentation
      Varadero(Cuba)
    • Year and Date
      2014-04-23
    • Description
      【発表確定】
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] バイナリ型回折レンズによるベッセルビーム生成に関する研究2014

    • Author(s)
      丸谷太一、元垣内敦司、三宅秀人、平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      筑波大学東京キャンパス
    • Year and Date
      2014-11-06
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Surface treatment of GaN substrates by thermal cleaning2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlNテンプレート上Si添加高AlNモル分率Al_x. Ga_<1-x>N多重量子井戸の時間空間分解陰極線蛍光分光評価2014

    • Author(s)
      秩父重英, 石川陽一, 古澤健太郎, 田代公則, 大友友美, 三宅秀人, 平松和政
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      2014-03-19
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      電子情報通信学会レーザー量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Year and Date
      2014-11-28
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Influence of thermal annealing in N2-CO ambient on AlN buffer layer2014

    • Author(s)
      S. Suzuki , H. Miyake, K. Hiramatsu, and H. Fukuyama
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア基板のサーマルリング2014

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Polarization Property of a Double-layer Wire Grid Polarizer and the Mechanism of Transmission2014

    • Author(s)
      A. Motogaito, Y. Morishita, H. Miyake and K. Hiramatsu
    • Organizer
      17th European Conference on Integrated Optics and 20th Microoptics Conference
    • Place of Presentation
      Nice, France
    • Year and Date
      2014-06-25
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] サファイア上AlN 緩衝層のN2-CO アニールとMOVPE 法による高温成長2014

    • Author(s)
      鈴木周平、三宅秀人、平松和政、福山博之
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Surface treatment of GaN substrates by thermal cleaning2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] サファイア上AlN 緩衝層のN2-CO アニールとMOVPE 法による高温成長2014

    • Author(s)
      鈴木周平、三宅秀人、平松和政、福山博之
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] エピタキシャル成長のためのGaN 自立基板サーマルクリーニング2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-28
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Influence of thermal annealing in N2-CO ambient on AlN buffer layer2014

    • Author(s)
      S. Suzuki, H. Miyake, K. Hiramatsu, and H. Fukuyama
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 2層型ワイヤーグリッド偏光子の偏光特性と表面プラズモン共鳴2014

    • Author(s)
      元垣内敦司、森下雄太、三宅秀人、平松和政
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 光学フィルタへの応用に向けた金属2次元回折格子構造の作製と可視光及び赤外光の透過・反射制御2014

    • Author(s)
      鬼頭壮宜、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] AlN基板の表面処理とホモエピタキシャル成長2014

    • Author(s)
      渡邉祥順、三宅秀人、平松和政、岩崎洋介
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-29
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] AlN基板の表面処理とホモエピタキシャル成長2014

    • Author(s)
      渡邉祥順、三宅秀人、平松和政、岩崎洋介
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-29
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE法によるAlGaN成長とその深紫外光源への応用(依頼講演)2014

    • Author(s)
      三宅秀人、平松和政
    • Organizer
      日本学術振興会「結晶加工と評価技術」第145委員会
    • Place of Presentation
      明治大学
    • Year and Date
      2014-01-17
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] サファイア上AlGaN多重量子井戸構造における格子緩和層の影響2014

    • Author(s)
      中濵和大, 福世文嗣、三宅秀人, 平松和政, 吉田治正, 小林祐二
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      2014-03-19
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-05-28
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Fabrication of AlGaN Multiple Quantum Wells on Sapphire with Lattice-Relaxation Layer2014

    • Author(s)
      K. Nakahama, F. Fukuyo, H. Miyake, K. Hiramatsu, H. Yoshida and Y. Kobayashi
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, USA
    • Year and Date
      2014-05-19
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlGaN系量子井戸構造の高温PL測定2014

    • Author(s)
      早川裕也, 福野智規, 中村豪仁, 倉井聡, 三宅秀人, 平松和政, 山田陽一
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      2014-03-19
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] The study for the controlling luminous intensity of white light emitting diode by binary diffractive concave lens2014

    • Author(s)
      N. Hashimoto, K. Manabe, A. Motogaito, H. Miyake, K. Hiramatsu
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Influence of thermal cleaning on free-standing GaN surface2014

    • Author(s)
      S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume
    • Organizer
      第33回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2014-07-10
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE Homoepitaxy on Freestanding AlN Substrate with Trench Pattern2014

    • Author(s)
      Y. Watanabe、H. Miyake、K. Hiramatsu, Y. Iwasaki and S. Nagata
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, USA
    • Year and Date
      2014-05-19
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN growth on carbonized-Si substrate by MOVPE2014

    • Author(s)
      K. Izumi, H. Miyake, K. Hiramatsu, H. Oku, H. Asamura, and K. Kawamura
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア基板のサーマルリング2014

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] The effect of the lattice-relaxation layer of Si-doped AlGaN multiple quantum2014

    • Author(s)
      K. Nakahama, F. Fukuyo, H. Miyake, K. Hiramatsu, H. Yoshida, and Y. Kobayashi
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Excitation of Surface Plasmon Polariton at the GaP-Au Interface in a High-Refractive-Index Medium2014

    • Author(s)
      A. Motogaito, S. Nakamura, J. Miyazaki, H. Miyake and K. Hiramatsu
    • Organizer
      17th European Conference on Integrated Optics and 20th Microoptics Conference
    • Place of Presentation
      Nice, France
    • Year and Date
      2014-06-25
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      電子情報通信学会レーザー量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Year and Date
      2014-11-28
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] サファイア上AlN緩衝層のN_2-COアニールとMOVPE法によるAlN成長2014

    • Author(s)
      西尾剛, 鈴木周平, 三宅秀人, 平松和政, 福山博之, 徳本有紀, 山田陽一
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      2014-03-19
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] HVPE法による周期溝加工AlN自立基板へのホモエピタキシャル成長2014

    • Author(s)
      渡邉祥順, 三宅秀人, 平松和政, 岩崎洋介, 永田俊郎
    • Organizer
      第61回応用物理学会秋季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Year and Date
      2014-03-18
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Improvement of Light Extraction Efficiency with Periodic Light-extraction Structures on Sapphire Substrate for Electron-beam-pumped Deep-ultraviolet Light Sources2014

    • Author(s)
      F. Fukuyo, H. Miyake, K. Hiramatsu, H. Yoshida, Y. Kobayashi
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Year and Date
      2014-03-03
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Studies on surface plasmon sensor using one-dimensional metal diffraction grating2014

    • Author(s)
      S. Mito, A. Motogaito, H. Miyake and K. Hiramatsu
    • Organizer
      The 4th International Symposium for Sustainability by Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] エピタキシャル成長のためのGaN 自立基板サーマルクリーニング2014

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍修、橋詰保
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-26
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 減圧MOVPE法によるAlGaN多重量子井戸構造の緩衝層の効果2014

    • Author(s)
      中濵和大、福世文嗣、三宅秀人、平松和政、吉田治正、小林祐二
    • Organizer
      電子情報通信学会レーザー量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Year and Date
      2014-11-27
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE 法AlN 成長条件のシミュレーションによる検討2014

    • Author(s)
      安井大貴、三宅秀人、平松和政、河村貴宏
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名城大学
    • Year and Date
      2014-07-25
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Study of AlN growth conditions for hydride vapor phase epitaxy2014

    • Author(s)
      D. Yasui, H. Miyake, K. Hiramatsu and T. Kawamura
    • Organizer
      The 4th International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Year and Date
      2014-11-26
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] GaP-Au接触界面における伝搬型表面プラズモンポラリトンの励起を用いた化学センサーの製作と評価2013

    • Author(s)
      中村将平、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-29
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 非極性GaN基板上への選択成長とInGaN/GaN多重量子井戸構造の作製2013

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、江夏悠貴、長尾哲
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaN growth on off-angle trench patterned GaN/sapphire templates by MOVPE2013

    • Author(s)
      Z. Cai, H. Miyake, K. Hiramatsu
    • Organizer
      ISPlasma2013
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Growth of thick AIN on 6H-SiC substrate by low-pressure HVPE2013

    • Author(s)
      S. Kitagawa, H. Miyake, K. Hiramatsu
    • Organizer
      ISPlasma2013
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-01-29
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 窒化物半導体AlGaNの成長と電子線励起紫外光源への応用2013

    • Author(s)
      三宅秀人、平松和政、福世文嗣、吉田治正、小林祐二
    • Organizer
      日本機械学会2013年度年次大会
    • Place of Presentation
      岡山大学
    • Year and Date
      2013-09-11
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 減圧HVPE法を用いた6H-SiC基板上へのAlN成長における核形成制御2013

    • Author(s)
      北川慎, 三宅秀人, 平松和政
    • Organizer
      電子情報通信学会(ED, CPM, LQE合同研究会)
    • Place of Presentation
      大阪大学
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth and characterization of Si-doped AlN films on sapphire2013

    • Author(s)
      G. Nishio. H. Miyake and K.
    • Organizer
      MRS-JSAP joint sympojium
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-18
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] SiドープAINのMOVPE成長における転位密度の影響2013

    • Author(s)
      西尾剛、三宅秀人、平松和政
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-29
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlN成長におけるN2-COアニールによるAlN緩衝層制御2013

    • Author(s)
      西尾剛, 三宅秀人, 平松和政, 福山博之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-19
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE growth of Si doped AIN on trench patterned template2013

    • Author(s)
      Gou Nishio, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      The Moscone Center, San Francisco, California, USA
    • Year and Date
      2013-02-04
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlN緩衝層のN_2-rCOアニールとMOVPE法による高温成長2013

    • Author(s)
      西尾剛, 鈴木周平, 三宅秀人, 平松和政, 福山博之
    • Organizer
      電子情報通信学会(ED, CPM, LQE合同研究会)
    • Place of Presentation
      大阪大学
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Microscopic structure analysis of a thick AlN film grown on a trench-patterned AlN/sapphire template by X-ray microdiffraction2013

    • Author(s)
      K. T. Dinh, S. Takeuchi, K. Nakamura, T. Arauchi, Y. Nakamura., H. Miyake, K. Hiramatsu, Y. Imai, S. Kimura and Akira Sakai
    • Organizer
      MRS-JSAP joint sympojium
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-16
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] X線回折による断各周期溝加工構造AlN/Sapphire基板上エピタキシャル成長AlN厚膜の結晶構造解析2013

    • Author(s)
      荒内琢士, 竹内正太郎, 中村邦彦, KhanDhin, 中村芳明, 三宅秀人, 平松和政, 酒井朗
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-19
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 6H-SiC基板上へのAINのHVPE成長における核形成制御2013

    • Author(s)
      北川慎、三宅秀人、平松和政
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2013-03-28
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlNのMOVPE成長におけるSi取り込み量の転位密度依存性2013

    • Author(s)
      西尾剛、三宅秀人、平松和政、徳本有紀、米永一郎
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Selective-area growth of GaN on nonpolar substrates2013

    • Author(s)
      S. Okada, D. Jinno, M. Narukawa, H. Miyake, K. Hiramatsu, Y. Enatsu, S. Nagao
    • Organizer
      ISPlasma2013
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] LP-MOVPE法で成長したSi添加Al_xGa_<1-x>N/Al_yGa_<1-y>N多重量子井戸構造(x~0.6)のカソードルミネッセンスマッピング評価2013

    • Author(s)
      倉井聡, 穴井恒二, 若松歩, 三宅秀人, 平松和政, 山田陽一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-17
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] AlNのMOVPE成長におけるSi取り込み量の転位密度依存性2013

    • Author(s)
      西尾剛、三宅秀人、平松和政、徳本有紀、米永一郎
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure HVPE2013

    • Author(s)
      S. Kitagawa, H. Miyake, K. Hiramatsu
    • Organizer
      MRS-JSAP joint sympojium
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-16
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] AlGaN混晶薄膜における励起子分子の熱的安定性2013

    • Author(s)
      古谷佑二郎, 中尾文哉, 倉井聡, 三宅秀人, 平松和政, 山田陽一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-17
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Si doped AIN growth on trench patterned template by MOVPE2013

    • Author(s)
      G. Nishio, M. Narukawa, H. Miyake, K. Hiramatsu
    • Organizer
      ISPlasma2013
    • Place of Presentation
      名古屋大学
    • Year and Date
      2013-01-31
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlGaN系量子井戸構造における局在励起子分子の結合エネルギー2013

    • Author(s)
      早川裕也, 福野智規, 倉井聡, 三宅秀人, 平松和政, 山田陽一
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学, 京田辺市
    • Year and Date
      2013-09-20
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Epitaxy of AlGaN Multiple-Quantum Wells by MOVPE and Its Application of Ultraviolet Light Source2013

    • Author(s)
      H. Miyake, F. Fukuyo, S. Ochiai, K. Hiramatsu, H. Yoshida, Y. Kobayashi
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      サンフランシスコ(米国)
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] AlGaN多重量子井戸層からの電子線励起による発光における障壁層の影響2013

    • Author(s)
      中濱和大、福世文嗣、三宅秀人、平松和政、吉田治正、小林祐二
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Fabrication of high Al content AlGaN MQWs on AlN/sapphire by MOVPE2013

    • Author(s)
      H. Miyake, F. Fukuyo, S. Ochiai, M. Takagi, K. Hiramatsu, H. Yoshida, Y.Kobayashi
    • Organizer
      European Materials Research Society
    • Place of Presentation
      ストラスブール
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] 昇華法AlN基板の表面処理とHVPE法によるホモエピタキシャル成長2013

    • Author(s)
      渡邉祥順、三宅秀人、平松和政、永田俊郎
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学 銀杏会館
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Reflectance Characteristics at the Interface of GaP and Au Contact and the Exciting of the Surface Plasmon Polariton2012

    • Author(s)
      Shohei Nakamura, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 2nd International Symposium for Sustainability By Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 溝加工AlN基板上へのAlNのMOVPE成長におけるSiドーピング効果2012

    • Author(s)
      西尾剛, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Homoepitaxial growth of nonpolar Si-doped GaN by metal-organic vapor phase epitaxy2012

    • Author(s)
      Bei Ma, Daiki Jinno, Hideto Miyake and Kazumasa Hiramatsi
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター
    • Year and Date
      2012-10-15
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人,平松和政
    • Organizer
      第59回応用物理学関係連合講演会(招待講演)
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイアナノ構造を用いた深紫外光取り出し効率の向上2012

    • Author(s)
      高木麻有奈, 落合俊介, 福世文嗣, 三宅秀人, 平松和政
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学 筑紫キャンパス
    • Year and Date
      2012-11-09
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 減圧HVPE法を用いた6H-SiC基板上へのAIN厚膜成長2012

    • Author(s)
      北川慎, 強力尚紀, 三宅秀人, 平松和政
    • Organizer
      第42回結晶成長国内会議
    • Place of Presentation
      九州大学 筑紫キャンパス
    • Year and Date
      2012-11-09
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Effect of dislocation blocking on HVPE-grown AIN using the grooved seed in triangle-shaped stripe2012

    • Author(s)
      H. Miyake, T. Nomura, and K. Hiramatsu
    • Organizer
      4th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Hotel≪Saint-Petersburg≫, St. Petersburg, Russia
    • Year and Date
      2012-07-17
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Investigation of the surface plasmon polariton excitation conditions at a metal-semiconductor contact interface by simulation of reflectance characteristics2012

    • Author(s)
      Atsushi Motogaito, Shohei Nakamura, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      JSAP-OSA Joint Symosia
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-11
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE法によるAlN成長におけるサファイア界面制御とTEM観察2012

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政, 桑原崇彰, 光原昌寿, 桑野範之
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Selective area growth of semipolar(20-21) and (20-2-1) GaN by MOVPE2012

    • Author(s)
      Daiki Jinno, Bei Ma, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター
    • Year and Date
      2012-10-15
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] a面・n面サファイア上への減圧HVPE法によるAlN成長2012

    • Author(s)
      強力尚紀, 高木雄太, 三宅秀人, 平松和政,江龍修
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AIN grown on a-plane and n-plane Sapphire by Low-pressure HVPE2012

    • Author(s)
      Naoki Goriki, Hideto Miyake, Kazumasa Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター
    • Year and Date
      2012-10-15
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Optical analysis of indium incorporation of micro-facets grown on nonpolar GaN bulk substrate2012

    • Author(s)
      B. Ma, D. Jinno, H. Miyake, and K. Hiramatsu
    • Organizer
      第31回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2012-07-11
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 溝加工AlN基板上へのAlNのMOVPE成長におけるSiドーピング効果2012

    • Author(s)
      西尾剛, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Si-doped AlGaN量子井戸構造の減圧MOVPE法による成長と発光特性2012

    • Author(s)
      落合俊介, 福世文嗣, 三宅秀人, 平松和政, 吉田治正, 小林祐二
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] a面・n面サファイア上への減圧HVPE法によるAlN成長2012

    • Author(s)
      強力尚紀, 高木雄太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] MOVPE Growth of GaN on Off-Angle Trench-Patterned GaN/Sapphire Templates2012

    • Author(s)
      Zhi Cai, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 2nd International Symposium for Sustainability By Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Thick AIN Growth on 6H-SiC Substrate by Hydride Vapor Phase Epitaxy2012

    • Author(s)
      Shin Kitagawa, Naoki Gouriki, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 2nd International Symposium for Sustainability By Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Epitaxy of AlGaN Multiple-Quantum Wells by MOVPE and Its Application of Ultraviolet Light Source2012

    • Author(s)
      H.Miyake, S.Ochiai1,Y.Shimahara, K. Hiramatsu, F.Fukuyo, H.Yoshida, Y.Kobayashi
    • Organizer
      Collaborative Conference on Crystal Growth (3CG)
    • Place of Presentation
      フロリダ
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス(招待講演)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 3C-SiC/Si基板上GaN成長におけるAlN中間層の効果2012

    • Author(s)
      高谷佳史, 方浩, 三宅秀人, 平松和政, 浅村英俊, 川村啓介, 奥秀彦
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] MOVPE法によるm面GaN自立基板上へのGaN選択成長2012

    • Author(s)
      神野大樹, Bei Ma, 三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 金属 -半導体接触の界面における反射特性と伝搬型表面プラズモンポラリトンの励起2012

    • Author(s)
      中村 将平, 元垣内 敦司, 三宅 秀人, 平松 和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      タワーホール船堀
    • Year and Date
      2012-10-24
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE法によるAlN成長におけるサファイア界面制御とTEM観察2012

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政, 桑原崇彰, 光原昌寿, 桑野範之
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 減圧MOVPE法によるSi-doped AlGaN多重量子井戸の作製とその深紫外光源応用2012

    • Author(s)
      落合俊介、高木麻有奈、福世文嗣、三宅秀人、平松和政、小林祐二、吉田治正
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2012-11-30
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE法AlN成長におけるボイドを用いた歪み・転位低減技術2012

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス(招待講演)
    • Year and Date
      2012-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Improvement of GaN Quality by Maskless Epitaxy of Lateral Overgrowth on 3C-SiC/Si substrates2012

    • Author(s)
      Hao Fang, Yoshifumi Takaya, Hideto Miyake, Kazumasa Hiramatsu, Hidetoshi Asamura, Keisuke Kawamura and Hidehiko Oku
    • Organizer
      International Workshop on Nitride Semiconductors 2012
    • Place of Presentation
      札幌コンベンションセンター
    • Year and Date
      2012-10-16
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 非極性GaN基板上への選択MOVPE成長2012

    • Author(s)
      神野大樹、岡田俊祐、三宅秀人、平松和政、江夏悠貴、長尾 哲
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究会
    • Place of Presentation
      大阪市立大学
    • Year and Date
      2012-11-30
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Facet Structures of Selective-Area-Grown GaN on Semipolar(20-21) and (20-2-1) Substrates2012

    • Author(s)
      Shunsuke Okada, Daiki Jinno, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 2nd International Symposium for Sustainability By Engineering at MIU
    • Place of Presentation
      三重大学
    • Year and Date
      2012-11-02
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 半極性(20-21), (20-2-1)GaN基板上へのMOVPE法による選択成長2012

    • Author(s)
      神野大樹, Bei Ma,三宅秀人, 平松和政, 江夏悠貴, 長尾哲
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      松山大学
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 非極性自立GaN結晶のラマン散乱分光による評価2012

    • Author(s)
      馬ベイ, 神野大樹, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2011

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 高Al組成AlGaN混晶薄膜の励起子分子結合エネルギー2011

    • Author(s)
      橘高亮, 武藤弘貴, 室谷英彰, 倉井聡, 山田陽一, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Homo-epitaxial growth of thick AlN film by HVPE2011

    • Author(s)
      H.Miyake
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII 2011)
    • Place of Presentation
      高野山大学
    • Year and Date
      2011-03-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Raman analysis of HVPE-grown free-standing gallium nitride with various orientations2011

    • Author(s)
      Ma, B; Jinno, D; Miyake, H; Hiramatsu, K; Harima, H
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] エッチピット法によるAlNエビタキシャル膜中の貫通転位の評価2011

    • Author(s)
      野村拓也、三宅秀人、平松和政、龍祐樹、桑原崇彰、桑野範之
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Homo-epitaxial growth of thick AlN film by HVPE2011

    • Author(s)
      H.Miyake
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII 2011)
    • Place of Presentation
      高野山大学(招待講演)
    • Year and Date
      2011-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Al_xGa_<1-x>N混晶の組成決定2011

    • Author(s)
      金廷坤, 木村篤人, 亀井靖人, 蓮池紀幸, 木曽田賢治, 播磨弘, 島原佑樹, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 250 nm emission from Si-doped AlGaN and its quantum wells upon excitation by electron beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida, T.Fujita, T.Kuwahara, N.Kuwano
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Influence of carrier gas and growth temperature on MOVPE growth of AlN2011

    • Author(s)
      Miyagawa, R; Yang, S; Miyake, H; Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlNのMOVPE成長におけるキャリアガスの影響2011

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Influence of carrier gas and growth temperature on MOVPE growth of AlN2011

    • Author(s)
      Miyagawa, R; Yang, S; Miyake, H; Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカサンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法によるAlNホモエピタキシャル成長2011

    • Author(s)
      野村拓也, 奥村健太, 三宅秀人, 平松和政, 江龍修, 福山博之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2011

    • Author(s)
      楊士波、宮川鈴衣奈、三宅秀人、平松和政、播磨弘
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 減圧HVPE法を用いたAlN成長における転位密度の低減2011

    • Author(s)
      野村拓也, 藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Study on interface for AlN growth on sapphire substrate2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 深い溝加工の6H-SiC基板を用いた減圧HVPE法によるAlN成長2011

    • Author(s)
      強力尚紀、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE2011

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Raman scattering spectroscopy of residual stresses in epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlNのMOVPE成長におけるキャリアガスの影響2011

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 3C-SiC/Si基板上AlGaN-buffer層を用いたGaN成長の歪み制御2011

    • Author(s)
      高谷佳史、大内澄人、方浩、三宅秀人、平松和政、浅村英俊、川村啓介
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 溝加工AlN上でのMOVPE法におけるAlN成長速度の異方性2011

    • Author(s)
      楊士波, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by lowpressure HVPE2011

    • Author(s)
      Takagi, Y Miyagawa, R Miyake, H Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-14
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication of crack-free thick AlN film on a-plane sapphire by lowpressure HVPE2011

    • Author(s)
      Takagi, Y Miyagawa, R Miyake, H Hiramatsu, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-14
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Ultraviolet light source using MOVPE grown Si-doped AlGaN on AlN/sapphire2011

    • Author(s)
      H. Miyake, Y. Shimahara, S. Ochiai, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Organizer
      E-MRS Spring Meeting(招待講演)
    • Place of Presentation
      ニース(フランス)
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE2011

    • Author(s)
      T.Nomura, K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu, Y.Yamada
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] エッチピット法によるAlNエピタキシャル膜中の貫通転位の評価2011

    • Author(s)
      野村拓也、三宅秀人、平松和政、龍祐樹、桑原崇彰、桑野範之
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlGaN系量子井戸構造の内部量子効率に対するSi添加効果2011

    • Author(s)
      赤瀬大貴, 室谷英彰, 穴井恒二, 倉井聡, 山田陽一, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Raman scattering spectroscopy of residual stresses in epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H. Miyake, Y. Shimahara, S. Ochiai, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials(ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Si-doped AlGaN多重量子井戸の作製と発光特性2011

    • Author(s)
      落合俊介, 島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN/サファイア上の低?中Al組成AlGaN層の成長過程と転位の挙動2011

    • Author(s)
      桑野範之, 藤田智彰, 桑原崇彰, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Homo-epitaxial growth of thick AlN film by HVPE2011

    • Author(s)
      H.Miyake
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors (IWBNS-VII 2011)
    • Place of Presentation
      高野山大学
    • Year and Date
      2011-03-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication and emission properties of Si-doped AlGaN multiple quantum wells2011

    • Author(s)
      S.Ochiai, Y.Shimahara, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Al_xGa_<1-x>N膜におけるLOフォノン-プラズモン結合モードの観測2011

    • Author(s)
      木村篤人, 金廷坤, 亀井靖人, 蓮池紀幸, 木曽田賢治, 播磨弘, 島原佑樹, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE法による選択成長を用いたGaN基板の反り制御2011

    • Author(s)
      大内澄人, 直井弘之, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] サファイア上へのAlN成長における界面層の評価(2)2011

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE法GaN成長におけるボイド形成による基板の反り制御2011

    • Author(s)
      大内澄人、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 非極性自立基板を用いたGaNホモエピタキシャル成長2011

    • Author(s)
      神野大樹, Bei Ma, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Effects of carrier gas and temperature on MOVPE growth of AlN2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE2011

    • Author(s)
      T.Nomura, K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu, Y.Yamada
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Study on interface for AlN growth on sapphire substrate2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      The 5th Asia-pacific Workshop on Widegap Semiconductors (APWS2011)
    • Place of Presentation
      鳥羽国際ホテル
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Si-doped AlGaN超格子の作製と発光評価2011

    • Author(s)
      三宅秀人, 島原佑樹, 落合俊介, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正, 桑野範之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] a面Sapphire上周期溝加工c面AlNを基板に用いたHVPE法によるAlN厚膜成長2011

    • Author(s)
      高木雄太、三宅秀人、平松和政
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Distribution of three-dimensional local strain in thick AlN film grown on a trenchpatterned AlN/α-Al_2O_3 template2011

    • Author(s)
      原田進司, 渡邉翔太, 吉川純, 中村芳明, 酒井朗, 三宅秀人, 平松和政, 今井康彦, 木村滋, 坂田修
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工c面AlN/a面Sapphire上への減圧HVPE法によるAlN成長2011

    • Author(s)
      高木雄太, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/a面Sapphire上への厚膜AIN成長2011

    • Author(s)
      高木雄太, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法によるAlNホモエピタキシャル成長2011

    • Author(s)
      野村拓也, 奥村健太, 三宅秀人, 平松和政, 江龍修, 福山博之
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE法による選択成長を用いたGaN基板の反り制御2011

    • Author(s)
      大内澄人, 直井弘之, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における中間層制御2011

    • Author(s)
      宮川鈴衣奈、楊士波、三宅秀人、平松和政、桑原崇彰、桑野範之、光原昌寿
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN/サファイア上の低?中Al組成AlGaN層の成長過程と転位の挙動2011

    • Author(s)
      桑野範之, 藤田智彰, 桑原崇彰, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-27
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] サファイア上へのAlN成長における界面層の評価(2)2011

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE2011

    • Author(s)
      T.Nomura, K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu, Y.Yamada
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカサンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Si-doped AlGaN超格子の作製と発光評価2011

    • Author(s)
      三宅秀人, 島原佑樹, 落合俊介, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正, 桑野範之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2011

    • Author(s)
      楊士波、宮川鈴衣奈、三宅秀人、平松和政、播磨弘
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Deep-Ultraviolet Emission Si-doped AlGaN Excited by Electron Beam2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2011)
    • Place of Presentation
      名古屋工業大学
    • Year and Date
      2011-03-07
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      San Francisco, CA, USA
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Control of AlN buffer/sapphire substrate interface for AlN growth2011

    • Author(s)
      R. Miyagawa, S. Yang, H. Miyake, and K. Hiramatsu, H. Miyake, K. Okumura, T. Nomura, K. Hiramatsu and Y. Yamada
    • Organizer
      7th International Workshop on Bulk Nitride Semiconductors
    • Place of Presentation
      Wakayama, Japan
    • Year and Date
      2011-03-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Ultraviolet light source using MOVPE grown Si-doped AlGaN on AlN/sapphire2011

    • Author(s)
      H.Miyake, Y.Shimahara, S.Ochiai, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      E-MRS Spring Meeting
    • Place of Presentation
      Congress Center(ニース、フランス)(招待講演)
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 無極性・半極性自立基板を用いたGaNホモエピタキシャル成長2011

    • Author(s)
      神野大樹、馬ベイ、方浩、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] X線マイクロ回折を用いたGaN自立基板の格子面傾斜ゆらぎの解析2011

    • Author(s)
      渡邉翔大, 原田進司, Thanh Khan Dinh, 吉川純, 中村芳明, 三宅秀人, 平松和政, 今井康彦, 木村滋, 坂田修身, 酒井朗
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] a面Sapphire上周期溝加工c面AlNを基板に用いたHVPE法によるAlN厚膜成長2011

    • Author(s)
      高木雄太、三宅秀人、平松和政
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学東山キャンパスベンチャービジネスラボラトリー
    • Year and Date
      2011-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法によるAlNホモエピタキシャル成長2011

    • Author(s)
      野村拓也, 奥村健太, 三宅秀人, 平松和政, 江龍修, 福山博之
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工c面AlN/a面Sapphire上への減圧HVPE法によるAlN成長2011

    • Author(s)
      高木雄太, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 深い溝加工の6H-SiC基板を用いた減圧HVPE法によるAlN成長2011

    • Author(s)
      強力尚紀、三宅秀人、平松和政
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Ultraviolet Light Source using MOVPE grown Si-doped AlGaN on AlN/Sapphire2011

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka, H. Yoshida
    • Organizer
      E-MRS 2011 Spring Meeting
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 溝加工AlN上でのMOVPE法におけるAlN成長速度の異方性2011

    • Author(s)
      楊士波,宮川鈴衣奈,三宅秀人,平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-31
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 周期溝加工c面AlN/a面Sapphire上への減圧HVPE法によるAlN成長2011

    • Author(s)
      高木雄太, 三宅秀人, 平松和政
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Effects of carrier gas and temperature on MOVPE growth of AlN2011

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      第30回電子材料シンポジウム(EMS-30)
    • Place of Presentation
      ラフォーレ琵琶湖
    • Year and Date
      2011-06-30
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Raman scattering spectroscopy for epitaxial AlN films2011

    • Author(s)
      S.Yang, R.Miyagawa, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      アメリカ サンフランシスコ
    • Year and Date
      2011-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] PETフィルム上バイナリ型回折凸レンズにおける緑色光の配光制御2011

    • Author(s)
      元垣内敦司, 荒川和哉, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/a面Sapphire上への厚膜AlN成長2011

    • Author(s)
      高木雄太, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学小白川キャンパス
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] サファイア上へのAlN成長における界面層の評価(2)2011

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第58回 応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(予稿集DVD)
    • Year and Date
      2011-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 自立GaN結晶を用いたラマン散乱分光の面方位依存性2011

    • Author(s)
      馬ベイ、神野大樹、三宅秀人、平松和政、播磨弘
    • Organizer
      第3回窒化物半導体結晶成長講演会
    • Place of Presentation
      九州大学筑紫キャンパス
    • Year and Date
      2011-06-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における中間層制御2011

    • Author(s)
      宮川鈴衣奈、楊士波、三宅秀人、平松和政、桑原崇彰、桑野範之、光原昌寿
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス桂ホール
    • Year and Date
      2011-11-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer2011

    • Author(s)
      Fang, H; Takaya, Y; Ohuchi, S; Miyake, H; Hiramatsu, K; Asamura, H; Kawamura, K
    • Organizer
      The 9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Scottish Exhibition and Conference Center(グラスゴー・イギリス)
    • Year and Date
      2011-07-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] r面サファイア上a面GaN成長における反りのその場観察2010

    • Author(s)
      馬ベイ, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      Montpellier,France
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京(招待講演)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2010

    • Author(s)
      楊士波, 宮川鈴衣奈, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国 ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京(招待講演)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Evidence for Movement of Threading Dislocations in GaN Thin Layers during the VPE Growth2010

    • Author(s)
      N.Kuwano, T.Fujita, T.Ezaki, R.Miyagawa, S.Ohuchi, H.Miyake, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランス モンペリエ
    • Year and Date
      2010-07-05
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 短焦点距離バイナリ型回折レンズにおける回折効率の周期内凸部占有率依存性2010

    • Author(s)
      荒川和哉, 元垣内敦司, 三宅秀人, 平松和政
    • Organizer
      日本光学会年次学術講演会
    • Place of Presentation
      中央大学 駿河台記念館
    • Year and Date
      2010-11-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア上へのAlN成長における界面層の評価2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 陽電子消滅によるAlGaN中の欠陥評価2010

    • Author(s)
      上殿明良, 三宅秀人, 平松和政, 石橋章司
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(招待講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 電子線励起による深紫外光源用Si-doped AlGaNの作製2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] SiCを基板に用いた減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 野村拓也, 三宅秀人, 平松和政, 江龍修
    • Organizer
      電子情報通信学会研究会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE growth of Si-doped AlGaN and its application for ultra-violet light source2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu
    • Organizer
      10th Akasaki Research Center Symposium
    • Place of Presentation
      ルブラ王山(名古屋市)(招待講演)
    • Year and Date
      2010-11-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN Growth on Trench-Patterned AlN/Sapphire by Low-Pressure HVPE2010

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] HVPE growth of crack-free thick AlN film on trench-patterned AlN template2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Structural study of selective-area grown a-plane GaN2010

    • Author(s)
      B.Ma, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランス モンペリエ
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における界面制御2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)(招待講演)
    • Place of Presentation
      北京(中国)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A. Motogaito, K. Arakawa, Y. Nakayama, H. Miyake and K. Hiramatsu
    • Organizer
      16th Microoptics Conference(MOC2010)
    • Place of Presentation
      新竹(台湾)
    • Year and Date
      2010-11-02
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer2010

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-02
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] サファイア基板上AlN成長における界面層評価2010

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのAlN横方向成長2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Low Pressure HVPE Growth of AlN on 6H-SiC2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] サファイア上へのAlN成長における界面層の評価2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Growth of High-Quality AlN on a-Plane Sapphire by HVPE2010

    • Author(s)
      Y.Takagi, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Si-doped AlGaNのMOVPE成長と光学特性評価2010

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of ultraviolet-C light source using MOVPE grown AlGaN layer on AlN/sapphire2010

    • Author(s)
      H.Miyake
    • Organizer
      SPIE Photonics West 2010
    • Place of Presentation
      San Francisco, CA, USA(招待講演)
    • Year and Date
      2010-01-28
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of Deep Ultra-violer Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京(招待講演)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 溝加工6H-SiC基板上への減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Interface Control of AlN Buffer and Sapphire Substrate for AlN Growth2010

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AIN Growth on Trench-Patterned AlN/Sapphire by Low-Pressure HVPE2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Study on AlN buffer layer for AlN growth on sapphire substrate by MOVPE2010

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] HVPE growth of AlN on trench-patterned 6H-SiC substrates2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Low Pressure HVPE Growth of AIN on 6H-SiC2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices
    • Place of Presentation
      Beijing, China
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication of Deep Ultra-violet Light Source using AlGaN on AlN/sapphire2010

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing, China(招待講演)
    • Year and Date
      2010-05-18
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2010

    • Author(s)
      楊士波, 宮川鈴衣奈, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Stress Analysis of a-plane GaN Grown on r-plane Sapphire Substrates2010

    • Author(s)
      B.Ma, J.Zhang, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      Seoul Korea
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 高Al組成を有するAl_xGa_<1-x>Nの深い電子準位の評価2010

    • Author(s)
      奥崎慎也, 菅原克也, 武富浩幸, 三宅秀人, 平松和政, 橋詰保
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE growth of Si-doped AlGaN and its application for ultra-violet light source2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu
    • Organizer
      10th Akasaki Research Center Symposium
    • Place of Presentation
      ルブラ王山(名古屋市)(招待講演)
    • Year and Date
      2010-11-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 昇華法AlN基板上への減圧HVPE法によるAlNホモエピタキシャル成長2010

    • Author(s)
      野村拓也, 奥村建太, 三宅秀人, 平松和政, 江龍修, 山田陽一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランスモンペリエ
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Growth of High-Quality AlN on a-Plane Sapphire by HVPE2010

    • Author(s)
      Y.Takagi, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN Growth on Trench-Patterned AlN/Sapphire by Low-Pressure HVPE2010

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Al_xGa_<1-x>N膜組成とバンドギャップ変化の分光評価2010

    • Author(s)
      木村篤人, 金廷坤, 亀井靖人, 蓮池紀幸, 木曽田賢治, 播磨弘, 島原佑樹, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Optical Polarization Properties of Si-doped AlGaN Ternary Alloy Epitaxial Layers2010

    • Author(s)
      H.Murotani, R.Kittaka, S.Kurai, Y.Yamada, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] r面サファイア上a面GaNの反り異方性2010

    • Author(s)
      馬ベイ, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] AlGaN混晶の広領域での複素屈折率2010

    • Author(s)
      岩井浩紀, 小田哲, 福井一俊, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] エピタキシャルAlN膜のラマン散乱分光による評価2010

    • Author(s)
      楊士波, 宮川鈴衣奈, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 電子線励起法による深紫外光源用Si-doped AlGaNの作製と特性評価2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] サファイア基板上へのAlNのMOVPE成長における界面制御2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Growth of High-Quality AlN on a-Plane Sapphire by HVPE2010

    • Author(s)
      Y.Takagi, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Low Pressure HVPE Growth of AlN on 6H-SiC2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryuu
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会研究会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] AlN/サファイア上AlGaN層の成長過程と貫通転位の挙動2010

    • Author(s)
      桑野範之, 藤田智彰, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(招待講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of crack-free thick AlN film on trench-patterned AlN template2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Deep-ultraviolet luminescence from Si-doped AlGaN grown by low-pressure MOVPE2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] SiCを基板に用いた減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 野村拓也, 三宅秀人, 平松和政, 江龍修
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] SiCを基板に用いた減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 野村拓也, 三宅秀人, 平松和政, 江龍修
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of ultraviolet-C light source using MOVPE grown AlGaN layer on AlN/sapphire2010

    • Author(s)
      三宅秀人
    • Organizer
      SPIE Photonics West 2010
    • Place of Presentation
      サンフランシスコ (米国)
    • Year and Date
      2010-01-28
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer2010

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-02
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Recombination Dynamics of Localized Excitons in Al_xGa_<1-x>N (0.37<x<0.81) Ternary Alloys2010

    • Author(s)
      H.Murotani, R.Kittaka, S.Kurai, Y.Yamada, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 昇華法AlN基板上への減圧HVPE法によるAlNホモエピタキシャル成長2010

    • Author(s)
      野村拓也, 奥村建太, 三宅秀人, 平松和政, 江龍修, 山田陽一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication and characterization of binary diffractive lens with the 100μm-order-focal length2010

    • Author(s)
      A.Motogaito, K.Arakawa, Y.Nakayama, H.Miyake, K.Hiramatsu
    • Organizer
      16^<th> Microoptics Conference (MOC2010)
    • Place of Presentation
      台湾 新竹
    • Year and Date
      2010-11-02
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 電子線励起による深紫外光源用Si-doped AlGaNの作製2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of AlN on trench-patterned 6H-SiC substrates2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 選択成長により形成されたボイドを利用したGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Stress Analysis of a-plane GaN Grown on r-plane Sapphire Substrates2010

    • Author(s)
      B.Ma, J.Zhang, H.Miyake, K.Hiramatsu, H.Harima
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上AlN成長における界面層評価2010

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Si-doped AlGaNのMOVPE成長と光学特性評価2010

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] AlNのサファイア上AlGaN層の成長過程と貫通転位の挙動2010

    • Author(s)
      桑野範之, 藤田智彰, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H. Miyake, Y. Shimahara, K. Hiramatsu, F. Fukuyo, T. Okada, H. Takaoka and H. Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting(招待講演)
    • Place of Presentation
      ソウル(韓国)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE Growth of Thick AlN on Trench-Patterned Sapphire Substrate2010

    • Author(s)
      H.Miyake, K.Okuura, K.Fujita, K.Hiramatsu
    • Organizer
      The 3rd International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      フランス モンペリエ
    • Year and Date
      2010-07-06
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlGaN混晶薄膜における偏光特性のSi濃度依存性2010

    • Author(s)
      室谷英彰, 橘高亮, 武藤弘貴, 倉井聡, 山田陽一, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 短焦点距離バイナリ型回折レンズの構造最適化2010

    • Author(s)
      荒川和哉、中山裕次、元垣内敦司、三宅秀人、平松和政
    • Organizer
      第35回光学シンポジウム
    • Place of Presentation
      東京大学 生産技術研究所
    • Year and Date
      2010-07-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Interface Control of AlN Buffer and Sapphire Substrate for AlN Growth2010

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカ タンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Deep-ultraviolet luminescence from Si-doped AlGaN grown by low-pressure MOVPE2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconduct or Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 選択成長により形成されたボイドを利用したGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 選択成長を用いて形成したボイドによるGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア上へのAlN成長における界面層の評価2010

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 選択成長を用いて形成したボイドによるGaN膜の反り制御2010

    • Author(s)
      大内澄人, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Interface Control of AlN Buffer and Sapphire Substrate for AlN Growth2010

    • Author(s)
      R.Miyagawa, S.Yang, H.Miyake, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2010 (IWN-2010)
    • Place of Presentation
      アメリカタンパ
    • Year and Date
      2010-09-20
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication of 247nm Light-Source Using AlGaN on AlN/Sapphire2010

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, et al.
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlGaN混晶薄膜の励起スペクトル2010

    • Author(s)
      橘高亮, 室谷英彰, 武藤弘貴, 倉井聡, 山田陽一, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of crack-free thick AlN film on trench-patterned AlN template2010

    • Author(s)
      K.Fujita, K.Okuura, H.Miyake, K.Hiramatsu, J.Norimatsu, H.Hirayama
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 昇華法AlN基板上への減圧HVPE法によるAlNホモエピタキシャル成長2010

    • Author(s)
      野村拓也, 奥村建太, 三宅秀人, 平松和政, 江龍修, 山田陽一
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] サファイア基板上AlN成長における界面層評価2010

    • Author(s)
      宮川鈴衣奈, 楊士波, 三宅秀人, 平松和政
    • Organizer
      応用物理学会結晶工学分科会年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Fabrication of ultraviolet-C light source using MOVPE grown AlGaN layer on AlN/sapphire2010

    • Author(s)
      三宅秀人
    • Organizer
      SPIE Photonics West 2010
    • Place of Presentation
      サンフランシスコ (米国)
    • Year and Date
      2010-01-28
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 電子線励起による深紫外光源の開発2010

    • Author(s)
      福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正, 島原佑樹, 武富浩幸, 三宅秀人, 平松和政
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(招待講演)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 電子線励起法による深紫外光源用Si-doped AlGaNの作製と特性評価2010

    • Author(s)
      島原佑樹, 三宅秀人, 平松和政, 福世文嗣, 岡田知幸, 高岡秀嗣, 吉田治正
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication Deep-violet Light Source using MOVPE-grown Si-doped AlGaN2010

    • Author(s)
      H.Miyake, Y.Shimahara, K.Hiramatsu, F Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      Korea-Japan Workshop on Semiconductor for Energy Saving and Harvesting
    • Place of Presentation
      韓国 ソウル(招待講演)
    • Year and Date
      2010-10-11
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 溝加工6H-SiC基板上への減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of ultraviolet-C light source using MOVPE grown AlGaN layer on AlN/sapphire2010

    • Author(s)
      Hideto Miyake
    • Organizer
      SPIE Photonics West 2010(招待講演)
    • Place of Presentation
      サンフランシスコ(米国)
    • Year and Date
      2010-01-28
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのAlN横方向成長2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] HVPE growth of c-plane AlN on a-plane sapphire using high-temperature buffer layer2010

    • Author(s)
      Y.Takagi, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-02
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] r面サファイア上a面GaNの反り異方性2010

    • Author(s)
      馬ベイ, 張紀才, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのAlN横方向成長2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Study on AlN buffer layer for AlN growth on sapphire substrate by MOVPE2010

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] r面サファイア上a面GaN成長における反りのその場観察2010

    • Author(s)
      馬ベイ, 三宅秀人, 平松和政, 播磨弘
    • Organizer
      応用物理学会結晶工学分科会 年末講演会
    • Place of Presentation
      学習院創立百周年記念会館
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of AlN on trench-patterned 6H-SiC substrates2010

    • Author(s)
      K.Okumura, H.Miyake, K.Hiramatsu, O.Eryu
    • Organizer
      The 37th International Conference on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      高松シンボルタワー
    • Year and Date
      2010-06-04
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN2010

    • Author(s)
      藤田浩平, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会研究会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-11-11
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Study on AlN buffer layer for AlN growth on sapphire substrate by MOVPE2010

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 溝加工6H-SiC基板上への減圧HVPE法によるAlN成長2010

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (平塚市)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] Structural study of selective-area grown a-plane GaN2010

    • Author(s)
      B.Ma, H.Miyake, K.Hiramatsu
    • Organizer
      第29回電子材料シンポジウム(EMS29)
    • Place of Presentation
      ラフォーレ修善寺
    • Year and Date
      2010-07-16
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Deep-ultraviolet luminescence from Si-doped AlGaN grown by low-pressure MOVPE2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, F.Fukuyo, T.Okada, H.Takaoka, H.Yoshida
    • Organizer
      The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      中国 北京
    • Year and Date
      2010-05-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Fabrication of 247 nm Light-Source Using AlGaN on AlN/Sapphire2010

    • Author(s)
      Y.Shimahara, H.Taketomi, H.Miyake, K.Hiramatsu, et al.
    • Organizer
      IS Plasma 2010
    • Place of Presentation
      名城大学
    • Year and Date
      2010-03-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of ultraviolet-C light source using MOVPE grown AIGaN layer on AlN/sapphire2010

    • Author(s)
      Hideto Miyake
    • Organizer
      SPIE Photonics West 2010
    • Place of Presentation
      サンフランシスコ(米国)
    • Year and Date
      2010-01-28
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Effects of r-plane sapphire nitridation on a-plane GaN grown by MOVPE2009

    • Author(s)
      B.Ma, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界(中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による溝加工基板上へのAlN成長2009

    • Author(s)
      奥浦一輝、藤田浩平、三宅秀人、平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工基板を用いた減圧HVPE法によるAlN厚膜成長2009

    • Author(s)
      平松和政, 三宅秀人, 奥浦一輝, 桑野範之
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of AlN on trench patterned sapphire2009

    • Author(s)
      H. Miyake, Y. Katagiri, K. Okuura and K.Hiramatsu
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] MOVPE法によるr面サファイア上へのa面GaN成長2009

    • Author(s)
      馬ベイ, 宮川鈴衣奈, 胡衛国, 三宅秀人, 平松和政
    • Organizer
      電子情報通信学会 電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Influence of off-cut angle of sapphire on the crystal quality of nonpolara-plane AlN by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] MOVPE法による高温AlN成長2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of AlN on trench patterned sapphire2009

    • Author(s)
      H.Miyake, Y.Katagiri, K.Okuura, K.Hiramatsu
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Jose, CA, USA(招待講演)
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE法を用いたa面GaNの選択成長2009

    • Author(s)
      馬ベイ、胡衛国、宮川鈴衣奈、三宅秀人、平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AlN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 高Al組成AlGaNのAlN/sapphire上へのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹、武富浩幸、三宅秀人、平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE法を用いたa面GaNの選択成長2009

    • Author(s)
      馬ベイ, 胡衛国, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAIN成長2009

    • Author(s)
      藤田浩平、奥浦一一輝、三宅秀人、平松和政、乗松潤、平山秀樹
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-20
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 窒化物半導体のMOVPE成長におけるその場観察2009

    • Author(s)
      生川満久, 西村将太, 小川原悠哉, 三宅秀人, 平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] HVPE growth of AlN on trench patterned sapphire(招待講演)2009

    • Author(s)
      H. Miyake, Y. Katagiri, K. Okuura and K. Hiramatsu
    • Organizer
      SPIE Photonic West
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] In situ monitoring on MOVPE growth of nitride semiconductors2009

    • Author(s)
      生川満久, 西村将太, 小川原悠哉, 三宅秀人, 平松和政
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖 (滋賀県守山市)
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures2009

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, M.Narukawa, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] r面サファイア上へのMOVPE法によるa面AlN, AlGaN成長2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN/sapphhle上のAlGaNのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹、武富浩幸、三宅秀人、平松和政, 他4名
    • Organizer
      電子情報通信学会電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による溝加工基板上へのAlN成長2009

    • Author(s)
      奥浦一輝, 藤田浩平, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AIN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semi conductors
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      H. Miyake, H. Taketomi, Y. Shimahara, K. Hiramatsu, et al.
    • Organizer
      The 8th International Conference on Nitride Semiconductors(招待講演)
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-21
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] A-Plane AlN and AlGaN Growth on R-Plane Sapphire by MOVPE2009

    • Author(s)
      R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による溝加工基板上へのAlN成長2009

    • Author(s)
      奥浦一輝, 藤田浩平, 三宅秀人, 平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      三宅秀人, 武富浩幸, 島原佑樹, 平松和政, et al.
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-21
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による6H-SiC上へのAlN成長2009

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE法による高温AlN成長2009

    • Author(s)
      宮川鈴衣奈、三宅秀人、平松和政
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 加工サファイア基板上へのMOVPE法によるGaN成長における反射・反りのその場観察2009

    • Author(s)
      西村将太、生川光久、三宅秀人、平松和政、深野敦之、谷口豊
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Low-Pressure HVPE growth of thick AlN on trench patterned Sapphire substrate2009

    • Author(s)
      K. Okuura, Y. Katagiri, H. Miyake and K.Hiramatsu
    • Organizer
      First International Symposium on Advanced Plasma Science and its Applications
    • Place of Presentation
      名古屋
    • Year and Date
      2009-03-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] 高Al組成AlGaNのAlN/sapphire 上へのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 減圧HVPE法による6H-SiC上へのAlN成長2009

    • Author(s)
      奥村建太, 三宅秀人, 平松和政, 江龍修
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 窒化物半導体のMOVPE成長におけるその場観察2009

    • Author(s)
      生川満久、西村将太、小川原悠哉、三宅秀人、平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AlN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semi conductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] MOVPE法によるr面サファイア上へのa面GaN成長2009

    • Author(s)
      馬ベイ、宮川鈴衣奈、胡衛国、三宅秀人、平松和政
    • Organizer
      電子情報通信学会電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平、奥浦一輝、三宅秀人、平松和政、乗松潤、平山秀樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE growth of AlN on trench pat terned sapphire(招待講演)2009

    • Author(s)
      H. Miyake, Y. Katagiri, K. Okuura, K. Hiramatsu
    • Organizer
      SPIE Photonic West
    • Place of Presentation
      San Jose, CA, USA
    • Year and Date
      2009-01-26
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] 電子線励起によるAlGaNを用いた深紫外光源2009

    • Author(s)
      武富浩幸, 島原佑樹, 三宅秀人, 平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] The In-Plane Anisotropic and Polarized Raman-Active Modes Studies of Nonpolar AlN Grown on 6H-SiC by Low-Pressure HVPE2009

    • Author(s)
      J.Wu, K.Okumura, H.Miyake, K.Hiramatsu
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-19
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] r面サファイア上へのMOVPE法によるa面AlN、 AlGaN成長2009

    • Author(s)
      宮川鈴衣奈、三宅秀人、平松和政
    • Organizer
      第1回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京農工大学
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 減圧HVPE法による6H-SiC上へのAlN成長2009

    • Author(s)
      奥村建太、三宅秀人、平松和政、江龍修
    • Organizer
      第39回結晶成長国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-13
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, et al.
    • Organizer
      The 8th International Conference on Nitride Semi conductors
    • Place of Presentation
      済州島(韓国)
    • Year and Date
      2009-10-21
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PROJECT-21560014
  • [Presentation] 電子線励起によるAlGaNを用いた深紫外光源2009

    • Author(s)
      武富浩幸、島原佑樹、三宅秀人、平松和政, 他4名
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長2009

    • Author(s)
      藤田浩平, 奥浦一輝, 三宅秀人, 平松和政, 乗松潤, 平山秀樹
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-20
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures2009

    • Author(s)
      W.Hu, B.Ma, D.Li, R.Miyagawa, M.Narukawa, H.Miyake K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界(中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] In situ monitoring on MOVPE growth of nitride semiconductors2009

    • Author(s)
      M. Narukawa, Y. Ogawahara, H. Miyake and K. Hiramatsu
    • Organizer
      First International Symposium on Advanced Plasma Science and its Applications
    • Place of Presentation
      名古屋
    • Year and Date
      2009-03-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Influence of off-cut angle of sapphire on the crystal quality of nonpolara-plane AIN by LP-HVPE2009

    • Author(s)
      J.Wu, Y.Katagiri, K.Okuura, H.Miyake, K.Hiramatsu
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界(中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Control of Facet Structures in Selective Area Growth (SAG) of a-plane GaN by MOVPE2009

    • Author(s)
      B.Ma, R.Miyagawa, H.Miyake, K.Hiramatsu
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン(米国)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] AlN/sapphire上のAlGaNのMOVPE成長と電子線励起による深紫外発光2009

    • Author(s)
      武富浩幸、三宅秀人、平松和政, 他4名
    • Organizer
      電子情報通信学会電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学(豊橋市)
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of High Quality c-plane AlN on a-plane Sapphire2009

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン (米国)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 周期溝加工基板を用いた減圧HVPE法によるAlN厚膜成長2009

    • Author(s)
      平松和政、三宅秀人、奥浦一輝、桑野範之
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] A-Plane AlN and AlGaN Growth on R-Plane Sapphire by MOVPE2009

    • Author(s)
      宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      済州島 (韓国)
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Control of Facet Structures in Selective Area Growth (SAG) of a-plane GaN by MOVPE2009

    • Author(s)
      馬ベイ, 宮川鈴衣奈, 三宅秀人, 平松和政
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン (米国)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN/sapphire 上のAlGaNのMOVPE成長と電子線励起による深紫外発光2009

    • Author(s)
      武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      電子情報通信学会 電子デバイス電子部品・材料シリコン材料・デバイス研究会
    • Place of Presentation
      豊橋技術科学大学 (豊橋市)
    • Year and Date
      2009-05-15
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] 加工サファイア基板上へのMOVPE法によるGaN成長における反射・反りのその場観察2009

    • Author(s)
      西村将太, 生川光久, 三宅秀人, 平松和政, 深野敦之, 谷口豊
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-08
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] Effects of r-plane sapphire nitridation on a-plane GaN grown by MOVPE2009

    • Author(s)
      馬ベイ, 三宅秀人, 平松和政
    • Organizer
      Asia-Pacific Workshop on wide gap Semiconductors (APWS 2009)
    • Place of Presentation
      張家界 (中国)
    • Year and Date
      2009-05-26
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] AlN/sapphire 上のAlGaNのMOVPE成長と発光特性2009

    • Author(s)
      島原佑樹, 武富浩幸, 三宅秀人, 平松和政, 他4名
    • Organizer
      電子情報通信学会 電子デバイス、電子部品・材料、レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      徳島大学
    • Year and Date
      2009-11-19
    • Data Source
      KAKENHI-PROJECT-21360007
  • [Presentation] MOVPE Growth of AlGaN with AlN Mole-Fractiom Control Layer2009

    • Author(s)
      H.Miyake, H.Taketomi, Y.Shimahara, K.Hiramatsu, et al.
    • Organizer
      The 8th International Conference on Nitride Semiconductors
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-21
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] In situ monitoring on MOVPE growth of nitride semiconductors2009

    • Author(s)
      M.Narukawa, S.Nishimura, Y.Ogawahara, H.Miyake, K.Hiramatsu
    • Organizer
      第28回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖(滋賀県守山市)
    • Year and Date
      2009-07-10
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of High Quality c-plane AlN on a-plane Sapphire2009

    • Author(s)
      R.Miyagawa, J.Wu, H.Miyake, K.Hiramatsu
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      ボストン(米国)
    • Year and Date
      2009-12-01
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] ファセット制御ELO法による窒化物半導体のエピタキシャル成長2008

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      日本学術振興会マイクロビームアナリシス第141委員会
    • Place of Presentation
      三重大学(招待講演)
    • Year and Date
      2008-05-13
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et al.
    • Organizer
      14th International Conference on Metalorganic vapor phase epitaxy
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Contrkl Technique2008

    • Author(s)
      H. Miyake, Y. Katagiri, S. Kishino, K. Okuura, K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux, Swiss
    • Year and Date
      2008-10-08
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] The effects of growth temperature on the properties of nonpolar a-plane AlN by LP-HVPE2008

    • Author(s)
      J. Wu, Y. Katagiri, K. Okuura, D. Li, H. Miyake and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Fabrication of the binary blazed diffractive lens for controlling the luminous intensity distribution of LED light2008

    • Author(s)
      A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake and K. Hiramatsu
    • Organizer
      6th International Conference on Optics-photonics Design & Fabrication
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2008-06-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Control Technique2008

    • Author(s)
      H. Miyake, Y. Katagiri, S. Kishino, K. Okuura, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Year and Date
      2008-10-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of the binary blazeddiffractiveeens for controling the luminous intensity distribution of LED light2008

    • Author(s)
      A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake, K. Hiramatsu
    • Organizer
      6th Internat ional Conference on Optics-photonics Design and Fabrication
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2008-06-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hiramatsu et.al.
    • Organizer
      14th International Conference on Metalorganic vapor phase epitaxy
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H.Miyake, N. Masuda, Y. Ogawahara, M.Narukawa, K.Hiramatsu, et.al.
    • Organizer
      14th International Conference on Metal organic vapor phase epitaxy
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Control Technique2008

    • Author(s)
      H.Miyake, Y.Katagiri, S.Kishino, K.Okuura, K.Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux,Switzerland
    • Year and Date
      2008-10-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Fabrication of the binary blazed diffractive lens for controlling the luminous intensity distribution of LED light2008

    • Author(s)
      A. Motogaito, N. Machida, T. Morikawa, K. Manabe, H. Miyake and K. Hiramatsu
    • Organizer
      International Conference on Optics-photonics Design & Fabrication
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2008-06-10
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H.Miyake, N.Masuda, Y.Ogawahara, M.Narukawa, K.Hiramatsu, et al.
    • Organizer
      14th International Conference on Metalorganic vapor phase epitaxy
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] ファセット制御ELO法による窒化物半導体のエピタキシャル成長(招待講演)2008

    • Author(s)
      三宅秀人, 平松和政
    • Organizer
      日本学術振興会マイクロビームアナリシス第141委員会
    • Place of Presentation
      三重大学
    • Year and Date
      2008-05-13
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Growth of crack-free AlGaN on selective area growth GaN2008

    • Author(s)
      H. Miyake, N. Masuda, Y. Ogawahara, M. Narukawa, K. Hirama tsu, et al.
    • Organizer
      14th International Conference on Metal organic vapor phase epitaxy
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE Growth of Crack-free Thick AlN Using Strain-Control Technique2008

    • Author(s)
      H.Miyake, Y.Katagiri, S.Kishino, K.Okuura, and K. Hiramatsu
    • Organizer
      International Workshop on Nitride Semiconductors 2008
    • Place of Presentation
      Montreux, Swiss
    • Year and Date
      2008-10-08
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] R面サファイア上へのA面GaN成長における成長圧力依存性(招待講演)2007

    • Author(s)
      三宅秀人, 宮川鈴衣奈, 生川満久、平松和政
    • Organizer
      プレ・ISGN-2シンポジウム
    • Place of Presentation
      東京・田町
    • Year and Date
      2007-12-19
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] R面サファイア上へのA面GaN成長における成長圧力依存性(招待講演)2007

    • Author(s)
      三宅 秀人, 宮川 鈴衣奈, 生川 満久、平松 和政
    • Organizer
      プレ・ISGN・2シンポジウム
    • Place of Presentation
      東京・田町
    • Year and Date
      2007-12-19
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] Optical characterization of Japanese papers for application to the LED lighting system with human sensitivity2007

    • Author(s)
      A.Motogaito, K.Manabe, Y.Yamanaka, N.Machida, H.Miyake and K.Hiramatsu
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      東京
    • Year and Date
      2007-11-29
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] Selective area growth of III-nitride and their application for emitting Devices2007

    • Author(s)
      K.Hiramatsu, H.Miyake, D.Li
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      Tokyo, Japan(招待講演)
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Selective area growth of III-nitride and their application for emitting Devices(招待講演)2007

    • Author(s)
      K.Hiramatsu, H.Miyake and D.Li
    • Organizer
      1st International Conference on White LEDs andSolid State Lighting
    • Place of Presentation
      東京都港区
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE法によるGaN・AIN成長の現状と課題2007

    • Author(s)
      平松和政, 劉玉懐, 三宅秀人
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学(招待講演)
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Growth of High AIN Molar Fraction AlGaN on Selective-Area-Growth GaN2007

    • Author(s)
      H. Miyake, N. Masuda, K. Hiramatsu
    • Organizer
      The Seventh International Conference on Nitride Semiconductors (ICNS-7), P2
    • Place of Presentation
      Las Vegas, Nevada, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] HVPE法によるGaN・AIN成長の現状と課題(招待講演)2007

    • Author(s)
      平松和政, 劉 玉懐, 三宅秀人
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道札幌市手稲区
    • Year and Date
      2007-09-06
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] Selective area growth of III-nitride and their application for emitting Devices2007

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Place of Presentation
      東京(招待講演)
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE法によるGaN・AIN成長の現状と課題(招待講演)2007

    • Author(s)
      平松 和政, 劉 玉懐, 三宅 秀人
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道札幌市手稲区
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PROJECT-18360008
  • [Presentation] HVPE法によるGaN・AIN成長の現状と課題(招待講演)2007

    • Author(s)
      平松和政, 劉 玉懐, 三宅秀人
    • Organizer
      第68回応用物理学会学術講演会
    • Year and Date
      2007-09-06
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Selective area growth of III-nitride and their application for emitting Devices(招待講演)2007

    • Author(s)
      K. Hiramatsu, H. Miyake and D. Li
    • Organizer
      1st International Conference on White LEDs and Solid State Lighting
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PLANNED-18069006
  • [Presentation] Optical Characterization of AIGaN grown on incline-grooved AIN epilayer2006

    • Author(s)
      H. Miyake, A. Ishiga, N. Umeda, T. Shibata, M. Tanaka, K. Hiramatsu
    • Organizer
      1st International Symposium on Nitride Growth
    • Place of Presentation
      LinkoSping, Sweden
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] Blue Emission from InGaN/GaN Hexagonal Pyramid Structures2006

    • Author(s)
      H. Miyake, K. Nakao, K. Hiramatsu
    • Organizer
      6th International Conference on Physics of Light-Matter Coupling in Nanos-tructures
    • Place of Presentation
      Magdeburg, Germany
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-18560010
  • [Presentation] MOVPE growth of AlN and AlGaN multiple-quantum wells on sapphire for electron-beam-excitation UV light source

    • Author(s)
      H. Miyake, G. Nishio, S. Suzuki, F. Fukuyo, K. Hiramatsu, H. Yoshida, Y. Kobayashi, H. Fukuyama, Y. Tokumoto
    • Organizer
      International Conference on Metamaterials and Nanophysics
    • Place of Presentation
      Varadera(Cuba)
    • Year and Date
      2014-04-22 – 2014-05-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Fabrication of high quality AlN on sapphire for deep-UV-LED substrate

    • Author(s)
      H. Miyake, S. Suzuki, G. Nishio, K. Hiramatsu
    • Organizer
      ISSLED2014
    • Place of Presentation
      Kaohsiung(Taiwan)
    • Year and Date
      2014-12-14 – 2014-12-19
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Fabrication of AlN molar fraction in Si-doped AlGaN MQWs

    • Author(s)
      Kazuhiro Nakahama, Fumitsugu Fukuyo, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, and Yuji Kobayashi
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlGaN Growth for Electron-Beam-Excitation Ultraviolet Light Source

    • Author(s)
      H. MIYAKE, F. Fukuyo, K. Hiramatsu, Y. Kobayashi
    • Organizer
      CIMTEC2014
    • Place of Presentation
      Montecatini Terme (Italy)
    • Year and Date
      2014-06-15 – 2014-06-19
    • Description
      【発表確定】
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Controlling reflectance and transmittance in visible and infrared light region by using periodical metallic nano-structures

    • Author(s)
      Masanori Kito, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] GaPとAuの接触を用いた伝搬型表面プラズモンセンサーによる高屈折率液体媒質の検出

    • Author(s)
      元垣内敦司、中村将平、宮崎 潤、三宅秀人、平松和政
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] 薄膜3C-SiC緩衝層を用いたSi基板上GaN成長

    • Author(s)
      片桐正義、泉 健太、三宅秀人、平松和政、奥 秀彦、浅村英俊・川村啓介
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究会
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by Low-pressure HVPE

    • Author(s)
      Shin Kitagawa, Hideto Miyake and Kazumasa HIramatsu
    • Organizer
      JSAP-MRS Joint Symosia
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlN 緩衝層のN2-CO アニールとMOVPE 法によるAlN 成長

    • Author(s)
      西尾 剛、鈴木周平、三宅秀人、平松和政、福山博之、徳本有紀、山田陽一
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      名城大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 窒化物半導体結晶特異構造の構造解析評価-マルチスケール評価へのアプローチー

    • Author(s)
      酒井朗, 竹内正太郎, 中村芳明, 三宅秀人, 平松和政, 今井康彦, 木村滋
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Optimazation of barrier hight in AlGaN multiple quantum wells

    • Author(s)
      Kazuhiro Nakahama, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlGaN 多重量子井戸構造における格子緩和層の影響

    • Author(s)
      中濵和大,福世文嗣,三宅秀人,平松和政,吉田治正,小林祐二
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学、神奈川
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] AlGaN Growth for Electron-Beam-Excitation Ultraviolet Light Source

    • Author(s)
      H. MIYAKE, F. Fukuyo, K. Hiramatsu, Y. Kobayashi
    • Organizer
      CIMTEC2014
    • Place of Presentation
      Montecatini Terme (Italy)
    • Year and Date
      2014-06-15 – 2014-06-19
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Impact of 3C-SiC intermediate-layer thickness on growth of GaN on Si substrate

    • Author(s)
      M. Katagiri, H. Fang, H. Miyake, K. Hiramatsu, H. Asamura, K. Kawamura and H. Oku
    • Organizer
      The 6th Asia-Pacific workshop on Widegap Semiconductors (APWS2013)
    • Place of Presentation
      Fullon Hotel (台湾 台北)
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Thermal treatment of HVPE-grown GaN substrate surface

    • Author(s)
      Hideto Miyake, Shunsuke Okada, Kazumasa HIramatsu, Reina Miyagawa, Osamu Eryu
    • Organizer
      WUPP 2014
    • Place of Presentation
      Bath(UK)
    • Year and Date
      2014-08-20 – 2014-08-22
    • Description
      【発表確定】
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE growth of high-quality AlGaN for Deep-ultraviolet Light Source

    • Author(s)
      H. Miyake, F. Fukuyo, Y. Kobayashi, K. Hiramatsu
    • Organizer
      2014 Asia Communications and Photonics Conference(ACP)
    • Place of Presentation
      Shanghai(China)
    • Year and Date
      2014-11-09 – 2014-11-13
    • Description
      【発表確定】
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Fabrication of high quality AlN on sapphire for deep-UV-LED substrate

    • Author(s)
      H. Miyake, S. Suzuki, G. Nishio, K. Hiramatsu, H. Fukuyama
    • Organizer
      2nd Intensive Discussion on Growth of Nitride Semiconductor
    • Place of Presentation
      東北大学 (仙台)
    • Year and Date
      2014-10-30 – 2014-10-31
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Effects of thermal cleaning on surface of free-standing GaN substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa HIramatsu, Reina Miyagawa, Osamu Eryu, Tamotsu Hashizume
    • Organizer
      The 15th IUMRS-ICA(International Union of Materials Research Societies, International Conference in Asia)
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-24 – 2014-08-30
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Effects of threading dislocation on MOVPE growth of Si-doped AlN

    • Author(s)
      G. Nishio, H. Miyake and K. Hiramatsu
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Surface treatment of sublimation-grown AlN substrate for homo-epitaxial growth by HVPE

    • Author(s)
      Yoshinobu Watanabe, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Si濃度の異なるAl0.61Ga0.39N混晶薄膜のカソードルミネッセンス法による局所スペクトル評価

    • Author(s)
      倉井聡, 三宅秀人, 平松和政, 山田陽一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア表面の影響

    • Author(s)
      林家弘、鈴木周平、岡田俊祐、三宅秀人、平松和政
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth of high-quality AlN on sapphire with thermally annealed AlN buffer layer in N2-CO

    • Author(s)
      H. Miyake, G. Nishio, S. Suzuki, K. Hiramatsu, and H. Fukuyama
    • Organizer
      The International Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw(Poland)
    • Year and Date
      2014-08-24 – 2014-08-29
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Study on Surface Thermal Stability of Free-Standing GaN Substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu, Reina Miyagawa, Osamu Eryu, Tamotsu Hashizume
    • Organizer
      ISPlasma/IC-PLANTS
    • Place of Presentation
      名古屋
    • Year and Date
      2015-03-26 – 2015-03-31
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] サファイア上AlN成長におけるN2-COアニールによるAlN緩衝層制御

    • Author(s)
      西尾 剛、三宅秀人、平松和政、福山博之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] スパッタ法AlNテンプレート基板を用いたAlNのHVPE成長

    • Author(s)
      安井大貴、三宅秀人、平松和政、岩谷素顕、赤﨑勇、天野浩
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-12
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] AlN growth on 6H-SiC substrate by low-pressure HVPE

    • Author(s)
      Shin Kitagawa, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Fabrication of high quality AlN on sapphire for deep-UV-LED substrate

    • Author(s)
      H. Miyake, S. Suzuki, G. Nishio, K. Hiramatsu, H. Fukuyama
    • Organizer
      2nd Intensive Discussion on Growth of Nitride Semiconductors
    • Place of Presentation
      仙台
    • Year and Date
      2014-10-30 – 2014-10-31
    • Description
      【発表確定】
    • Invited
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] ±c面GaNの表面熱的安定性に関する研究

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、逢坂崇、谷川智之、松岡隆志
    • Organizer
      2015年 第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Formation of atomic steps on sapphiresubstrates for AlN epitaxy

    • Author(s)
      C.-H. Lin, S. Suzuki, H. Miyake, K. Hiramatsu
    • Organizer
      ISSLED2014
    • Place of Presentation
      Kaohsiung(Taiwan)
    • Year and Date
      2014-12-14 – 2014-12-19
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] GaN自立基板のサーマルクリーニング

    • Author(s)
      岡田俊祐、三宅秀人、平松和政、宮川鈴衣奈、江龍 修
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 二層型ワイヤーグリッド偏光子の特性周期及び高さ依存性

    • Author(s)
      森下 雄太、元垣内 敦司、三宅 秀人、平松和政
    • Organizer
      日本光学会年次学術講演会(OPJ2013)
    • Place of Presentation
      奈良県新公会堂
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] サファイア上AlGaN 多重量子井戸構造における格子緩和層の影響

    • Author(s)
      中濱和大、福世文嗣、三宅秀人、平松和政、吉田治正、小林祐二
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Growth of high-quality AlN on sapphire with thermally annealed AlN buffer layer in N2-CO

    • Author(s)
      H. Miyake, G. Nishio, S. Suzuki, K. Hiramatsu, and H. Fukuyama
    • Organizer
      The International Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw (Poland)
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] HVPE Homoepitaxy on Freestanding AlN Substrate with Trench Pattern

    • Author(s)
      Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu, Yosuke Iwasaki, Shunro Nagata
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta (USA)
    • Year and Date
      2014-05-19 – 2014-05-22
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

    • Author(s)
      Shunsuke Okada , Hideto Miyake, kazumasa Hiramatsu , Yuuki Enatsu and Satoru Nagao
    • Organizer
      JSAP-MRS Joint Symosia
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Improvement of Light Extraction Efficiency with Periodic Light-extraction Structures on Sapphire Substrate for Electron-beam-pumped Deep-ultraviolet Light Sources

    • Author(s)
      F. Fukuyo, H. Miyake, K. Hiramatsu, H. Yoshida, Y. Kobayashi
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] CO-N2熱処理法を用いたサファイア基板上への高品質AlN成長

    • Author(s)
      三宅秀人, 鈴木周平, 林家弘, 平松和政, 福山博之
    • Organizer
      日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第92回研究会
    • Place of Presentation
      三島
    • Year and Date
      2014-12-12 – 2014-12-13
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Studies on InGaN multiple-quantum wells grown on non- and semi-polar bulk GaN substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa iramatsu, Yuuki Enatsu, and Satoru Nagao
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Formation of atomic steps on sapphiresubstrates for AlN epitaxy

    • Author(s)
      C.-H. Lin, S. Suzuki, H. Miyake, K. Hiramatsu
    • Organizer
      ISSLED2014
    • Place of Presentation
      Kaohsiung(Taiwan)
    • Year and Date
      2014-12-14 – 2014-12-19
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] 薄膜3C-SiC緩衝層を用いたGaN成長と評価

    • Author(s)
      片桐正義、方  浩、三宅秀人、平松和政、奥 秀彦、浅村英俊,川村啓介
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] HVPE Homoepitaxy on Freestanding AlN Substrate with Trench Pattern

    • Author(s)
      Yoshinobu Watanabe, Hideto Miyake, Kazumasa Hiramatsu, Yosuke Iwasaki, Shunro Nagata
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta(USA)
    • Year and Date
      2014-05-19 – 2014-05-22
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] エピタキシャル成長のためのGaN自立基板サーマルクリーニング

    • Author(s)
      岡田俊祐, 三宅秀人, 平松和政, 宮川鈴衣奈, 江龍修, 橋詰保
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-25 – 2014-07-26
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE法による高品質AlGaNの成長

    • Author(s)
      三宅秀人、平松和政
    • Organizer
      CRESTパワー・先端素子半導体に関するシンポジウム
    • Place of Presentation
      北海道大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Study on AlN growth conditions for hydride vapor phase epitaxy

    • Author(s)
      Daiki YASUI, Hideto MIYAKE, Kazumasa HIRAMATSU
    • Organizer
      The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
    • Place of Presentation
      福岡大学 (福岡)
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] The Excitation of the Surface Plasmon Polariton with the GaP-Au Contact and Application to Chemical Sensors

    • Author(s)
      S. Nakamura, A. Motogaito, H. Miyake, and K. Hiramatsu
    • Organizer
      2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
    • Place of Presentation
      国立京都国際会館
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Study on the Chemical Sensor Using Excitation of the Surface Plasmon Polariton with the GaP-Au Contact

    • Author(s)
      Shohei Nakamura, Atsushi Motogaito, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      JSAP-OSA Symposia 2013
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-25600090
  • [Presentation] Fabrication of InGaN MQWs on non-polar GaN substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      ISPlasma 2014
    • Place of Presentation
      名城大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 減圧HVPE成長を用いた6H-SiC基板上へのAlN成長における核形成制御

    • Author(s)
      北川 慎、三宅秀人、平松和政
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア基板のサーマルクーリング

    • Author(s)
      林家弘, 鈴木周平, 岡田俊祐, 三宅秀人, 平松和政
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] AlGaN混晶薄膜の高温PLE測定

    • Author(s)
      中尾文哉, 長坂智幸, 鶴丸拓斗, 倉井聡, 三宅秀人, 平松和政, 山田陽一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] HVPE growth of high quality AlN film on 6H-SiC substrate using three dimensional nucleation

    • Author(s)
      Shin Kitagawa, Hideto Miyake and Kazumasa Hiramatsu
    • Organizer
      The 6th Asia-Pacific workshop on Widegap Semiconductors (APWS2013)
    • Place of Presentation
      Fullon Hotel (台湾 台北)
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] MOVPE法によるAlGaN成長とその深紫外光源への応用

    • Author(s)
      三宅秀人、平松和政 、福世文嗣、吉田治正、小林祐二
    • Organizer
      日本学術振興会「結晶加工と評価技術」第145委員会
    • Place of Presentation
      明治大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] 減圧MOVPE法によるAlGaN多重量子井戸構造の緩衝層の効果

    • Author(s)
      中濵和大, 福世文嗣, 三宅秀人, 平松和政, 吉田治正, 小林祐二
    • Organizer
      電子情報通信学会電子デバイス研究会(ED), 電子部品・材料研究会(CPM), レーザ・量子エレクトロニクス研究会(LQE)
    • Place of Presentation
      吹田市
    • Year and Date
      2014-11-27 – 2014-11-28
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth and characterization of Si-doped AlN films on sapphire

    • Author(s)
      Gou Nishio, Hideto Miyake, Kazumasa Hiramatsu, Yuki Tokumoto and Ichiro Yonenaga
    • Organizer
      JSAP-MRS Joint Symosia
    • Place of Presentation
      同志社大学 京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Thermal treatment of HVPE-grown GaN substrate surface

    • Author(s)
      Hideto Miyake, Shunsuke Okada, Kazumasa HIramatsu,
    • Organizer
      WUPP 2014
    • Place of Presentation
      Bath (UK)
    • Year and Date
      2014-08-20 – 2014-08-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] スパッタ法AlNテンプレート基板を用いたAlNのHVPE成長

    • Author(s)
      安井大貴、三宅秀人、平松和政、岩谷素顕、赤崎勇、天野浩
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Effects of threading dislocation on MOVPE growth of Si-doped AlN

    • Author(s)
      G. Nishio, H. Miyake and K. Hiramatsu
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Study on Surface Thermal Stability of Free-Standing GaN Substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu, Reina Miyagawa, Osamu Eryu, Tamotsu Hashizume
    • Organizer
      ISPlasma/IC-PLANTS
    • Place of Presentation
      名古屋大学 (名古屋)
    • Year and Date
      2015-03-26 – 2015-03-31
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] HVPE法AlN成長条件のシミュレーションによる検討

    • Author(s)
      安井大貴, 三宅秀人, 平松和政, 河村貴宏
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-25 – 2014-07-26
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Study on facet structures of selective-area grown GaN on non- and semi-polar substrates

    • Author(s)
      H. Miyake, D. Jinno, S. Okada, K. Hiramatsu, Y. Enatsu and S. Nagao
    • Organizer
      The 6th Asia-Pacific workshop on Widegap Semiconductors (APWS2013)
    • Place of Presentation
      Fullon Hotel (台湾 台北)
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] GaNにおけるキャリア・励起子エネルギー緩和過程

    • Author(s)
      馬〓, 山口裕暉, 高橋賢治, 後藤圭, 竹内和真, 岩堀友洋, 森田健, 石谷善博, 三宅秀人, 平松和政
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Fabrication of high Al content AlGaN MQWs on AlN/sapphire by MOVPE

    • Author(s)
      H. Miyake, F. Fukuyo, S. Ochiai, M. Takagi, K. Hiramatsu, H. Yoshida, Y.Kobayashi
    • Organizer
      E-MRS
    • Place of Presentation
      Strasbourg, France
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Effects of thermal cleaning on surface of free-standing GaN substrates

    • Author(s)
      Shunsuke Okada, Hideto Miyake, Kazumasa HIramatsu,
    • Organizer
      The 15th IUMRS-ICA (International Union of Materials Research Societies, International Conference in Asia)
    • Place of Presentation
      福岡大学 (福岡)
    • Year and Date
      2014-08-24 – 2014-08-30
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] MOVPE法によるAlN成長におけるc面サファイア微傾斜角度の影響

    • Author(s)
      鈴木周平、林家弘、三宅秀人、平松和政、福山博之
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] GaN自立基板の表面におけるサーマルクリーニングの効果

    • Author(s)
      岡田俊祐, 三宅秀人, 平松和政, 宮川鈴衣奈, 江龍修, 橋詰保
    • Organizer
      電子情報通信学会電子デバイス研究会(ED), 電子部品・材料研究会(CPM), レーザ・量子エレクトロニクス研究会(LQE)
    • Place of Presentation
      吹田市
    • Year and Date
      2014-11-27 – 2014-11-28
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] AlGaN系量子井戸構造の高温PLE測定

    • Author(s)
      福野智規, 中村豪仁, 和泉平, 倉井聡, 三宅秀人, 平松和政, 山田陽一
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Growth of thick GaN on Si substrate with 3C-SiC intermediate layer

    • Author(s)
      M. Katagiri, H. Fang, H. Miyake, K. Hiramatsu, H. Oku and H. Asamura
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] 混晶組成変調によるSi添加AlGaN多重量子井戸の発光効率向上

    • Author(s)
      山崎芳樹, 古澤健太郎, 小島一信, 中濵和大, 三宅秀人, 平松和政, 秩父重英
    • Organizer
      2014年第75回応用物理学会秋季学術講演会
    • Place of Presentation
      札幌
    • Year and Date
      2014-09-17 – 2014-09-20
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Study on AlN growth conditions for hydride vapor phase epitaxy

    • Author(s)
      Daiki YASUI, Hideto MIYAKE, Kazumasa HIRAMATSU
    • Organizer
      The 15th IUMRS-ICA(International Union of Materials Research Societies, International Conference in Asia)
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-24 – 2014-08-30
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] 励起子励起準位を用いたGaNの励起子ダイナミクスの解析

    • Author(s)
      竹内和真、大泉尚之、馬〓、森田健、石谷善博、三宅秀人、平松和政
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Fabrication of AlGaN multiple quantum wells on sapphire with lattice-relaxation layer

    • Author(s)
      Kazuhiro Nakahama, Fumitsugu Fukuyo, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, Yuji Kobayashi
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta (USA)
    • Year and Date
      2014-05-19 – 2014-05-22
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] AlGaN量子井戸における励起子分子結合エネルギーの井戸幅依存性

    • Author(s)
      福野智規、中村豪仁、和泉平、倉井聡、三宅秀人、平松和政、山田陽一
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Thermal cleaning of sublimation-grown AlN substrate for homo-epitaxial growth by HVPE

    • Author(s)
      Yoshinobu Watanabe, Gou Nishio, Hideto Miyake, Kazumasa Hiramatsu and Shunro Nagata
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlN緩衝層のN2-COアニールとMOVPE法による高温成長

    • Author(s)
      西尾 剛、鈴木周平、三宅秀人、平松和政、福山博之
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス、電子デバイス、電子部品・材料研究
    • Place of Presentation
      大阪大学 吹田キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] サファイア上AlN緩衝層のN2-COアニールとMOVPE法による高温成長

    • Author(s)
      鈴木周平, 三宅秀人, 平松和政, 福山博之
    • Organizer
      第6回窒化物半導体結晶成長講演会
    • Place of Presentation
      名古屋
    • Year and Date
      2014-07-25 – 2014-07-26
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] N極性(0001)GaNのMOVPE選択成長における貫通転位密度の低減

    • Author(s)
      逢坂崇、谷川智之、木村健司、正直花奈子、窪谷茂幸、片山竜二、松岡隆志、三宅秀人
    • Organizer
      2015年 第62回応用物理学会春季学術講演会
    • Place of Presentation
      平塚市
    • Year and Date
      2015-03-11 – 2015-03-14
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] HVPE法による周期溝加工AlN自立基板へのホモエピタキシャル成長

    • Author(s)
      渡邉祥順、三宅秀人、平松和政、岩崎洋介、永田俊郎
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-24360008
  • [Presentation] Fabrication of high quality AlN on sapphire for deep-UV-LED substrate

    • Author(s)
      H. Miyake, S. Suzuki, G. Nishio, K. Hiramatsu
    • Organizer
      ISSLED2014
    • Place of Presentation
      Kaohsiung(Taiwan)
    • Year and Date
      2014-12-14 – 2014-12-19
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] Fabrication of AlGaN multiple quantum wells on sapphire with lattice-relaxation layer

    • Author(s)
      Kazuhiro Nakahama, Fumitsugu Fukuyo, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, Yuji Kobayashi
    • Organizer
      5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta(USA)
    • Year and Date
      2014-05-19 – 2014-05-22
    • Description
      【発表確定】
    • Data Source
      KAKENHI-PROJECT-25000011
  • [Presentation] MOVPE growth of high-quality AlGaN for Deep-ultraviolet Light Source

    • Author(s)
      H. Miyake, F. Fukuyo, Y. Kobayashi, K. Hiramatsu
    • Organizer
      2014 Asia Communications and Photonics Conference
    • Place of Presentation
      Shanghai(China)
    • Year and Date
      2014-11-09 – 2014-11-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560010
  • [Presentation] Studies on growth of GaN on Si substrate with 3C-SiC buffer layer

    • Author(s)
      Masayoshi Katagiri, Hideto Miyake, Kazumasa Hiramatsu, Hidehiko Oku, Hidetoshi Asamura, and Keisuke Kawamura
    • Organizer
      The 3rd International Symposium for Sustainability By Engieering at MIU (IS2EMU2013)
    • Place of Presentation
      三重大学
    • Data Source
      KAKENHI-PROJECT-24360008
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