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Takeda Yoshikazu  竹田 美和

ORCIDConnect your ORCID iD *help
… Alternative Names

TAKEDA Yoshikazu  竹田 美和

武田 美和  タケダ ヨシカズ

竹田 義和  タケダ ヨシカヅ

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Researcher Number 20111932
Other IDs
External Links
Affiliation (Current) 2025: 公益財団法人科学技術交流財団(あいちシンクロトロン光センター、知の拠点重点研究プロジェクト統括部), あいちシンクロトロン光センター, 所長
Affiliation (based on the past Project Information) *help 2013: 公益財団法人名古屋産業科学研究所, 研究部, 研究員
2013: 名古屋大学, 工学研究科, 名誉教授
2012 – 2013: 公益財団法人名古屋産業科学研究所, その他部局等, 研究員
2012: 公益財団法人名古屋産業科学研究所, 研究部部局等, 研究員
2010 – 2011: 名古屋大学, 工学研究科, 教授 … More
2007 – 2011: Nagoya University, 大学院・工学研究科, 教授
2008: 名古屋大学, 大学院・工学研究科, 工学研究科
2006: 国立大学法人名古屋大学, 工学研究科, 教授
2005 – 2006: 名古屋大学, 大学院工学研究科, 教授
2003 – 2005: Nagoya University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授
1997 – 2005: NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,PROFESSOR, 工学研究科, 教授
1997: 名古屋大学, 大学院・工学研究科, 教授
1991 – 1996: 名古屋大学, 工学部, 教授
1986 – 1989: Kyoto University, Faculty of Engineering, Lecturer, 工学部, 講師
1988: 京大, 工・電気, 講師
1986: 京大, 工学部, 助手 Less
Review Section/Research Field
Principal Investigator
電子材料工学 / Electronic materials/Electric materials / Applied materials science/Crystal engineering / Applied materials / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties / Electron device/Electronic equipment
Except Principal Investigator
Applied materials / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering … More / Electronic materials/Electric materials / Electronic materials/Electric materials / Particle/Nuclear/Cosmic ray/Astro physics / 素粒子・核・宇宙線 / Nanostructural science / Nanomaterials/Nanobioscience / Science and Engineering Less
Keywords
Principal Investigator
蛍光EXAFS / EXAFS / 半導体 / 結合長 / 1原子層 / 成長初期過程 / 原子レベル / OMVPE / InPAs / 界面構造 … More / 結晶構造 / ATOMIC LAYER / SEMICONDUCTORS / QUANTUM FUNCTIONS / HYBRID STRUCTURES / METALS / INSULATORS / 量子機能 / 複合構造 / 金属 / 絶縁体 / 超格子 / 原子層制御 / 結晶成長 / 表面置換 / MBE / ミクロ構造 / その場測定 / 原子配位 / bond length / crystal structure / superlattice / 物性 / Ultra-high Doping / Light Amplifier / Semiconductors / Co-doping / Rare-Earth Elements / 希上類元素 / 超高濃度 / 光増幅素子 / 共添加 / 希土類元素 / GROWTH CONTROL / HETEROSTRUCTURE GROWTH / CRYSTAL STRUCTURES / INTERFACE / SURFACE / 制御 / ヘテロ成長 / 界面 / 表面 / GROWTH SYSTEM / 作製装置 / GROWTH CONDITIONS / PHOTOREFLECTANCE / X-RAY CTR / HETEROSTRUCTURE / QUANTUM STRUCTURES / 評価 / 成長 / 量子構造 / 異種V族 / INITIAL GROWTH PROCESS / FLUORESCENCE EXAFS / SENICONDUCTORS / 解析法 / 原子尺度 / 混晶半導体 / 螢光 / 混晶 / 量子ビーム / 量子エレクトロニクス / 表面・界面物性 / スピントロニクス / 金属内包フラーレン / 配列ナノ空間物質 / X線構造解析 / CTR散乱法 / ヘテロ界面 / 受光素子 / 液滴ヘテロエピタキシー法 / 発光素子 / III-V族化合物半導体 / 有機金属気相成長法 / 白色LED / 量子ドット / 干渉の制御 / 原子位置 / X線 / 干渉効果 / 電子波 / 臨界膜厚 / 局所構造 / 規則ー不規則配列 / 不活性化機構 / 自己補償機構 / 歪層 / 成長初期期過程 / 相分離 / 成長素過程 / 蛍光 / 自己補償 … More
Except Principal Investigator
エルビウム / InP / Er / 半導体 / 結晶成長 / ダブルヘテロ構造 / 原子レベル制御成長 / 有機金属気相エピタキシャル法 / 蛍光EXAFS法 / OMVPE法 / OMVPE / X線CTR散乱 / control of heterointerface / doubleheterostructures / erbium / stimulated emission / atomically-controlled growth / 誘導放出 / 新規半導体レーザ用材料 / 希土類添加III-V族半導体 / フォトカソード / X-ray CTR scattering / STM / AFM / 量子効果 / ErP / ランタノイド化合物 / 評価技術 / プロセス / デバイス / 量子構造 / 太陽電池 / 有機金属気相成長 / X線回折 / その場測定 / X線CTR散乱測定 / ヨハンソン分光結晶 / その場観察 / 局所構造 / III-V族半導体 / 希土類元素 / X線CTR散乱法 / GaInP / 希土類イオン / 局在スピン / MOCVD / crystal growth / X-ray diffraction / analysis of multilayer structure / epitaxial growth / compound semiconductor / 装置調整法の確立 / 1次元検出器 / 2次元検出器 / 回折測定の簡便な高精度化 / 回折測定の簡便な高速化 / 界面 / OMCVD / 複雑な多層構造の解析 / エピタキシャル / 化合物半導体 / carrier dynamics / new semiconductor lasers / rare-earth-doped III-V semiconductors / 非平衡キャリアグイナミクス / Extremely high vacuum technology / Field emission dark current / Negative Electron Affinity (NEA) / Spin polarization / ERL accelerator / Linear collider / Electron source / Emittance / 超高真空 / ピコ秒レーザー / GaAs / 電界放出型偏極電子源 / 正の電子親和性(PEA) / Pepper-Pot法 / 電極間暗電流 / 超高真空環境 / 200keV直流型電子銃 / 負の電子親和性(NEA)表面 / 低エミッタンス / ERL(Energy Recovery Linac) / 電子・陽電子リニアコライダー / tip状-GaAsフォトカソード / NEA-GaAsフォトカソード / 偏極電子源 / 低エミッタンス電子源 / ビームエミッタンス / 極高真空技術 / 電界放出暗電流 / 負の電子親和性表面 / スピン偏極電子 / ERL加速器 / リニアコライダー / 電子源 / エミッタンス / Diffusion of In atoms / Alignment method of optics / Computer simulation of X-ray scattering / Portable measurement system / Synchrotron radiation / atomic scale distributions / distributions of impurity atoms / X-ray CTR scattering measurement / 相互拡散 / 原子層単位 / 界面構造 / 半導体ヘテロ構造 / 薄膜多層構造 / 不純物原子 / In原子の拡散 / アライメント調整法の確立 / X線散乱の計算機シミュレーション / 可搬な測定系 / 放射光 / 原子層単位の原子分布 / 不純物原子分布 / materials for new semiconductor lasers / semiconductors / rare-earth-doped III-V / ヘテロ界面制御 / semimetal-semiconductor transition / quantum effects / atomicallv-controlled growth / semiconductor structures / semimetal / lanthanoide / 半金属―半導体転移 / 半金属-半導体転移 / 原子層制御成長 / 半導体低次元量子構造 / 半金属 / Laser-Compton Scattering / Photo-Cathode / Rf-Laser Gun / レーザーコンプトン光 / レーザー・コンプトン光 / レーザー・コンプトン / レーザー・コンプトン散乱 / 高周波電子銃 / Super-heteroepitaxy / Lanthanoide / δド-ピング / 量子機能 / STS / 走査トンネル顕微鏡 / 原子間刀顕微鏡 / 原子層制御スーパーヘテロエピタキシャル / Characterization / Process / Device / Quantum structure / Semiconductor / characterization / process / device / quantum structure / semiconductor / 光CVD / アモルファスSi / 微構造 / 原子尺度の制御 / 全有機金属気相エピタキシアル成長 / 異種接合光トランジスタ / 固体イメージ増倍素子 / 光増幅機能素子 / 歪超格子緩衝層 / ヘテロエピ成長 / II-VI族半導体Zn(S,Se) / 超格子緩衝層 / ヘテロエピタキシー / 【II】-【VI】族化合物Zn(S,Se) / 有機金属気相エピタキシアル成長 / 有機金属気相エピタキシァル成長 / 集積構造 / 光スイッチ / 光双安定 / 光増幅 / 稼動部のない測定 / X線反射率測定 / X線散乱 / X線集光光学系 / 回転機構排除 / 分光集光結晶 / X線回折測定 / 量子ビーム / スピンエレクトロニクス / 電子顕微鏡 / 量子井戸 / 半導体超微細化 / 結晶工学 / 回転移動不要 / 角度分散のあるX線 / 既存の実験室系X線源 / 半導体結晶成長 / X 線回折・散乱 / X線中性子 / 反射率法 / 埋もれた界面 / 薄膜多層膜 / ナノ表面界面 / 固体光増幅器 / 希土類元素添加族半導体 / 半導体スピントロニクス / 希土類元素添加半導体 / 有機Er原料 / 電流注入発光 / フルカラーディスプレイ / 希土類添加窒化物半導体 / 共添加 / 臨界成長温度 / 量子ドット / 半導体レーザ / Dy / 2〜3μm帯発光 / ジスプロシウム / X線CTR法 / GaP / 原子尺度 / 超構造 Less
  • Research Projects

    (47 results)
  • Research Products

    (299 results)
  • Co-Researchers

    (65 People)
  •  Improvement of quantum efficiency of super-high brightness and high spin-polarization photocathodesPrincipal Investigator

    • Principal Investigator
      TAKEDA Yoshikazu
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya Industrial Science Research Institute
      Nagoya University
  •  Development of X-ray diffractomator to realize in-situ observation of crystal growth

    • Principal Investigator
      TABUCHI MASAO
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya University
  •  Development of spin-polarized pulsed TEM and the application of spin-resolved analysis

    • Principal Investigator
      TANAKA Nobuo
    • Project Period (FY)
      2009 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Nanostructural science
    • Research Institution
      Nagoya University
  •  Development of X-ray scattering measurement system for in-situ observations of semiconductor crystalline growth

    • Principal Investigator
      TABUCHI Masao
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya University
  •  Intrinsic Hetero-interface Structures and Their FormationPrincipal Investigator

    • Principal Investigator
      TAKEDA Yoshikazu
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Nagoya University
  •  X線・中性子解析による「埋もれた」界面の科学に関する調査

    • Principal Investigator
      櫻井 健次
    • Project Period (FY)
      2006
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Nanomaterials/Nanobioscience
    • Research Institution
      National Institute for Materials Science
  •  分散量子ドットによる超広帯域可視・赤外光デバイスの作製Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      2004 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Nagoya University
  •  Analysis of semiconductor multi-layer structure by X-ray CTR scattering measurement

    • Principal Investigator
      TABUCHI Masao
    • Project Period (FY)
      2004 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya University
  •  希土類元素添加半導体の新展開:秩序制御による新しいスピン物性の発現

    • Principal Investigator
      藤原 康文
    • Project Period (FY)
      2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Osaka University
  •  希土類元素添加半導体における電流励起光学利得とその最適化

    • Principal Investigator
      藤原 康文
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Osaka University
  •  Development of ultra-low-emittance electron source

    • Principal Investigator
      NAKANISHI Tsutomu
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Particle/Nuclear/Cosmic ray/Astro physics
    • Research Institution
      Nagoya University
  •  Investigation for improved performance of new-type extremely-stable-wavelength light-emitting devices based on rare-earth-doped III-V semiconductors

    • Principal Investigator
      FUJIWARA Yasufumi
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Osaka University
  •  Distributions of impurity atoms in semiconductors analyzed by X-ray CTR scattering measurement

    • Principal Investigator
      TABUCHI Masao
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Nagoya University
  •  高輝度フルカラーディスプレイ用希土類添加窒化物半導体のエピタキシャル成長と物性

    • Principal Investigator
      藤原 康文
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and OPrincipal Investigator

    • Principal Investigator
      TAKEDA Yoshikazu
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  Materials for new semiconductor lasers; atomically-controlled, growth of rare-earth-doped III-V semiconductors with high quality

    • Principal Investigator
      FUJIWARA Yasufumi
    • Project Period (FY)
      2001 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Osaka University
      Nagoya University
  •  III-V族化合物半導体における希土類原子配置による局在スピンの制御と物件

    • Principal Investigator
      藤原 康文
    • Project Period (FY)
      1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Nagoya University
  •  COMPACT SYNCHROTRON RADIATION SOURCES USING RF-GUN AND LASER-ELECTROMAGNETIC FIELD

    • Principal Investigator
      KOBAYAKAWA Hisashi
    • Project Period (FY)
      1999 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      素粒子・核・宇宙線
    • Research Institution
      NAGOYA UNIVERSITY
  •  Atomically-controlled growth and properties of low-dimensional lanthanoide/semiconductor quantum structures

    • Principal Investigator
      FUJIWARA Yasufumi
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  III-V族化合物半導体における希土類原子配置による局在スピンの制御と物性

    • Principal Investigator
      藤原 康文
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Nagoya University
  •  室温動作2〜3μm帯半導体レーザ用材料:Dy添加III-V族半導体の作製と発光特性

    • Principal Investigator
      藤原 康文
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  III-V族化合物半導体における希土類原子配置による局在スピンの制御と物性

    • Principal Investigator
      藤原 康文
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  CRYSTAL STRUCTURE ANALYSIS OF SURFACE AND INTERFACE 1 ATOMIC LAYER AND CONTROL OF HETEROSTRUCTURE GROWTHPrincipal Investigator

    • Principal Investigator
      TAKEDA Yoshikazu
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      NAGOYA UNIVERSITY
  •  ATOMIC-LAYER CONTROLLED SUPER-HETEROEPITAXY AND PROPERTIES OF LANTHANOIDE/SEMICONDUCTOR STRUCTURES

    • Principal Investigator
      FUJIWARA Yasufumi
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      NAGOYA UNIVERSITY
  •  RESEARCH ON ATOMIC LAYER CONTROLLED GROWTH AND CHARACTERIZATION OF SEMICONDUCTOR QUANTUM STRUCTURES WITH DIFFERENT GROUP-V ATOMSPrincipal Investigator

    • Principal Investigator
      TAKEDA Yoshikazu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      NAGOYA UNIVERSITY
  •  DEVELOPMENT OF FABRICATION SYSTEM FOR NEW QUANTUM FUNCTIONAL MATERIALS OF SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURESPrincipal Investigator

    • Principal Investigator
      TAKEDA Yoshikazu
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      NAGOYA UNIVERSITY
  •  X線励起電子波による干渉効果とその制御Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  Advanced Science and Technology for Semiconductor Materials and Devices

    • Principal Investigator
      KUKIMOTO Hiroshi
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Institution
      Tokyo Institute of Technology
  •  蛍光EXAFSによる成長素過程のその場測定と原子レベルミクロ構造の制御Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  Advanced Science and Technology for Semiconductor Materials and Devices

    • Principal Investigator
      KUKIMOTO Hiroshi
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Overseas Scientific Survey.
    • Research Institution
      Tokyo Institute of Technology
  •  蛍光EXAFSによる成長素過程のその場測定と原子レベルミクロ構造の制御Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  蛍光EXAFSによる成長初期過程のその場測定と界面構造の解析Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  RESEARCH ON NEW QUANTUM FUNCTIONAL MATERIALS BY SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURESPrincipal Investigator

    • Principal Investigator
      TAKEDA Yoshikazu
    • Project Period (FY)
      1992 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      NAGOYA UNIVERSITY
  •  蛍光EXAFSによる成長素過程のその場測定と原子レベルミクロ構造の制御Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  蛍光EXAFSによる成長初期過程のその場測定と界面構造の解析Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  原子配位の直接測定による不純物自己補償機構及び不活性化機構の解明Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Nagoya University
  •  半導体の原子尺度での制御に関する研究

    • Principal Investigator
      伊藤 良一
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The University of Tokyo
  •  原子配位の直接測定による自己補償機構の解明Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto University
  •  半導体の原子尺度での制御に関する研究

    • Principal Investigator
      伊藤 良一
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Co-operative Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The University of Tokyo
  •  太陽電池の高効率化に関する研究

    • Principal Investigator
      高橋 清
    • Project Period (FY)
      1988
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tokyo Institute of Technology
  •  超格子および混晶半導体の原子尺度ミクロ構造解析法の開発研究Principal Investigator

    • Principal Investigator
      竹田 美和
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      Applied materials
    • Research Institution
      Kyoto University
  •  太陽電池の高効率化に関する研究

    • Principal Investigator
      高橋 清
    • Project Period (FY)
      1987 – 1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Tokyo Institute of Technology
  •  歪超格子緩衝層を用いたOMVPE Zn(S,Se)の高品質化の研究

    • Principal Investigator
      藤田 茂夫
    • Project Period (FY)
      1987
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Kyoto University
  •  光増幅機能素子の高性能化開発研究

    • Principal Investigator
      佐々木 昭夫
    • Project Period (FY)
      1987 – 1988
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      Applied materials
    • Research Institution
      Kyoto University
  •  超格子緩衝層付Zn(S,Se)エピタキシャル成長とその評価に関する研究

    • Principal Investigator
      FUJITA Shigeo
    • Project Period (FY)
      1986
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials
    • Research Institution
      Kyoto University
  •  光増幅機能素子の開発研究

    • Principal Investigator
      佐々木 昭夫
    • Project Period (FY)
      1985 – 1986
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      Applied materials
    • Research Institution
      Kyoto University
  •  Research on New Properties by Binary/Binary SuperlatticesPrincipal Investigator

    • Principal Investigator
      TAKEDA Yoshikazu
    • Project Period (FY)
      1985 – 1986
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Kyoto University

All 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] 強力永久磁石の開発と軸観察先端技術, 第6章,高輝度・高スピン偏極度フォトカソードの開発, マイクロビームアナリシス第141委員会強力永久磁石の開発と軸観察先端技術, 第6章,高輝度・高スピン偏極度フォトカソードの開発, マイクロビームアナリシス第141委員会2014

    • Author(s)
      竹田 美和
    • Total Pages
      416
    • Publisher
      日本学術振興会
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Book] マイクロビームアナリシス・ハンドブック2014

    • Author(s)
      竹田美和(分担執筆)
    • Total Pages
      715
    • Publisher
      オーム社
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy2014

    • Author(s)
      G.X. Ju, Y. Honda, M. Tabuchi, Y. Takeda, H. Amano
    • Journal Title

      Journal of Applied Physics

      Volume: 115

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy2014

    • Author(s)
      Guangxu Ju, Yoshio Honda, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano
    • Journal Title

      J. Appl. Phys

      Volume: 115

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Journal Article] Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction2014

    • Author(s)
      X.G. Jin, H. Nakahara, K. Saito, N. Tanaka, Y. Takeda
    • Journal Title

      Applied Physics Letters

      Volume: 104

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] X-ray investigation of GaInN single quamtum wells grown by atomic layer epitaxy and metalorganic vapor phase epitaxy2013

    • Author(s)
      G.X. Ju, Y. Kato, Y. Honda, M. Tabuchi, Y. Takeda, H. Amano
    • Journal Title

      Physica Status Solidi C

      Volume: 11 Issue: 3-4 Pages: 393-396

    • DOI

      10.1002/pssc.201300670

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM2013

    • Author(s)
      M. Kuwahara, Y. Nambo, S. Kusunokk, X. Jin, K. Saitoh, H. Asano, T. Ujihara, Y. Takeda, T. Nakanishi, and N. Tanaka
    • Journal Title

      Microscoopy

      Volume: 62 Issue: 6 Pages: 607-614

    • DOI

      10.1093/jmicro/dft035

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21221005, KAKENHI-PROJECT-23241036, KAKENHI-PROJECT-24651123, KAKENHI-PROJECT-25390066, KAKENHI-PROJECT-25706031
  • [Journal Article] Temporal response measurements of GaAs-based photocathodes2013

    • Author(s)
      Y.Honda, S.Matsubara, X.G.Jin, T.Miyajima, M.Yamamoto, T.Uchiyama, M.Kuwahara, and Y.Takeda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.52 Issue: 8R Pages: 86401-86401

    • DOI

      10.7567/jjap.52.086401

    • NAID

      210000142576

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23760310, KAKENHI-PROJECT-25390066, KAKENHI-PROJECT-25706031
  • [Journal Article] Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate2013

    • Author(s)
      X. Jin, S. Fuchi, and Y. Takeda
    • Journal Title

      J. of Crystal Growth

      Volume: 370 Pages: 201-207

    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] High-performance spin-polarized photocathodes using a GaAs/GaAsP strain-compensated superlattice2013

    • Author(s)
      X.G.Jin, A.Mano, F.Ichihashi, N.Yamamoto, and Y.Takeda
    • Journal Title

      Applied Physics Express

      Volume: Vol.6 Issue: 1 Pages: 125801-125801

    • DOI

      10.7567/apex.6.015801

    • NAID

      10031140457

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23540340, KAKENHI-PROJECT-23760310
  • [Journal Article] Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode2013

    • Author(s)
      X.G.Jin, S.Matsuba, Y.Honda, T.Miyajima, M.Yamamoto, T.Utiyama, and Y.Takeda
    • Journal Title

      Ultramicroscopy

      Volume: Vol.130 Pages: 44-48

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode2013

    • Author(s)
      X.G. Jin, S. Matsuba, Y. Honda, T. Miyajima, M. Yamamoto, T. Utiyama, Y. Takeda
    • Journal Title

      Ultramicroscopy

      Volume: 130 Pages: 44-48

    • DOI

      10.1016/j.ultramic.2013.04.008

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-25390066
  • [Journal Article] In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum well2013

    • Author(s)
      G. X. Ju, S. Fuchi, M. Tabuchi, Y. Takeda
    • Journal Title

      Journal of Crystal Growth

      Volume: 370 Pages: 36-41

    • DOI

      10.1016/j.jcrysgro.2012.09.028

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] Phase-locking of oscillating images using laser-induced spin-polarized pulse TEM2013

    • Author(s)
      M. Kuwahara, Y. Nambo, S. Kusunoki, X Jin, K. Saitoh, H. Asano, T. Ujihara, Y. Takeda, T. Nakanishi and N. Tanaka
    • Journal Title

      Microscopy

      Volume: 62(6) Pages: 607-614

    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] Analysis of Cs/GaAs NEA surface by XAFS2013

    • Author(s)
      K.Tsubota, M.Tabuchi, T.Nishitani, A.Era, Y.Takeda
    • Journal Title

      J. Phys. : Conf. Ser.

      Volume: Vol. 430 Pages: 12079-12079

    • Data Source
      KAKENHI-PROJECT-23360009
  • [Journal Article] In situ X-ray measurements of MOVPE growth of In_xGa_<1-x>N single quantum well2013

    • Author(s)
      G.X.Ju, S.Fuchi, M.Tabuchi, and Y.Takeda
    • Journal Title

      Journal of Crystal Growth

      Volume: Vol. 370 Pages: 36-41

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP substrate2013

    • Author(s)
      X.G.Jin, S.Fuchi, and Y.Takeda
    • Journal Title

      Journal of Crystal Growth

      Volume: Vol.370 Pages: 204-207

    • DOI

      10.1016/j.jcrysgro.2012.09.008

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23760310, KAKENHI-PROJECT-24651123
  • [Journal Article] In situ X-ray reflectivity of indium supplied on GaN templates by metalorganic vapor phase epitaxy2013

    • Author(s)
      G.X. Ju, S. Fuchi, M. Tabuchi, and Y. Takeda
    • Journal Title

      Journal of Applied Physics

      Volume: 114

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] In situ X-ray reflectivity measurements on annealed InxGa1-xN epilayer grown by metalorganic vapor phase epitaxy2013

    • Author(s)
      G.X. Ju, S. Fuchi, M. Tabuchi, Y. Takeda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52

    • NAID

      210000142606

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] スピン偏極パルス透過型顕微鏡の開発-偏極電子源の原理とその応用2013

    • Author(s)
      桑原真人、中西彊、竹田美和、田中信夫
    • Journal Title

      顕微鏡

      Volume: 48巻1号 Pages: 3-8

    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] Development of spin-polarized and pulsed TEM2012

    • Author(s)
      M Kuwahara, F.Ichihashi, S.Kusunoki, Y Takeda, K Saitoh, T Ujihara, H Asano, T.Nakanishi, N Tanaka
    • Journal Title

      Journal of Physics : Conference Seriese

      Volume: (未定)(掲載確定)

    • NAID

      130007640949

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation2012

    • Author(s)
      X. Jin, H. Nakahara, K. Saitoh, T. Saka, T. Ujihara, N. Tanaka, Y. Takeda
    • Journal Title

      Journal of Crystal Growth

      Volume: 353 Issue: 1 Pages: 84-87

    • DOI

      10.1016/j.jcrysgro.2012.05.017

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22000011, KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23760310
  • [Journal Article] 30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode2012

    • Author(s)
      M. Kuwahara, S. Kusunoki, X. G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, and N. Tanaka
    • Journal Title

      Applied Physics Letters

      Volume: 101(3) Pages: 33102-33102

    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation2012

    • Author(s)
      X. G. Jin, H. Nakahara, K. Saitoh, T. Saka, T. Ujihara, N. Tanaka, Y. Takeda
    • Journal Title

      Journal of Crystal rowth

      Volume: 353 Pages: 84-87

    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] 30-kV spin-polarized transmission electron microscope using GaAs-GaAsP strained superlattice photocathode2012

    • Author(s)
      Makoto Kuwahara, Xiuguang Jin, Yoshikazu Takeda他
    • Journal Title

      Applied Physics Letters

      Volume: 101 Issue: 3 Pages: 0331021-0331024

    • DOI

      10.1063/1.4737177

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23760310
  • [Journal Article] Mean Transverse Energy Measurement of Negative Electron Affinity GaAs-Based Photocathode2012

    • Author(s)
      S.Matduba
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 51 Issue: 4R Pages: 46402-46402

    • DOI

      10.1143/jjap.51.046402

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22740157, KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23760310
  • [Journal Article] Development of spin-polarized and pulsed TEM2012

    • Author(s)
      M Kuwahara, F. Ichihashi, S. Kusunoki, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi, N. Tanaka
    • Journal Title

      Journal of Physics : Conference Series

      Volume: 371 Pages: 12004-12004

    • NAID

      130007640949

    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] Fourfold increase of quantum efficiency in highly spin-polarized transmission-type photocathode2012

    • Author(s)
      X.G.Jin, F.Ichihashi, A.Mano, N.Yamamoto, and Y.Takeda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: Vol.51 Issue: 10R Pages: 108004-108004

    • DOI

      10.1143/jjap.51.108004

    • NAID

      210000141406

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23540340, KAKENHI-PROJECT-23760310
  • [Journal Article] Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation2012

    • Author(s)
      Xiuguang Jin, Hirotaka Nakahara, Koh Saitoh, Takashi Saka, Toru Ujihara, Nobuo Tanaka, Yoshikazu Takeda
    • Journal Title

      Journal of Crystal Growth

      Volume: 353 Pages: 84-87

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] Initial Stages of High-Temperature CaF2/Si(001) Epitaxial Growth Studied by Surface X-Ray Diffraction2011

    • Author(s)
      S.Suturin, N.Sokolov, A.Banshchikov, R.Kyutt, O.Sakata, T.Shimura, J.Harada, M.Tabuchi, and Y.Takeda
    • Journal Title

      J. Nanoscience and Nanotechnology

      Volume: Volume11, Number 4 Pages: 2990-2996

    • Data Source
      KAKENHI-PROJECT-23360009
  • [Journal Article] X-ray characterization of GaN and related materials at growth temperatures system design and measurements2011

    • Author(s)
      Y. Takeda, K. Ninoi, G. Ju, H. Kamiya, T. Mizuno, S. Fuchi, and M. Tabuchi
    • Journal Title

      Materials Science and Engineering

      Volume: Vol.24 Pages: 12002-12002

    • DOI

      10.1088/1757-899x/24/1/012002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Elimination of local thickness modulation in GaAs/GaAsP strained superlattices for high spin-polarization photocathodes2011

    • Author(s)
      X.G.Jin, S.Fuchi, T.Ujihara, Y.Takeda, 他
    • Journal Title

      Journal of Physics : Conference Series

      Volume: 298 Pages: 012011-012011

    • DOI

      10.1088/1742-6596/298/1/012011

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Journal Article] Development of spin-polarized transmission electron microscope2011

    • Author(s)
      M. Kuwahara, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi, and N Tanaka
    • Journal Title

      Journal of Physics : Conference Seriese

      Volume: 298 Pages: 12016-12016

    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] Development of spin-polarized transmission electron microscope2011

    • Author(s)
      M.Kuwahara, Y.Takeda, K.Saitoh, T.Ujihara, H.Asano, T.Nakanishi, N Tanaka
    • Journal Title

      Journal of Physics : Conference Seriese

      Volume: 298 Pages: 12016-12016

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator2011

    • Author(s)
      H. Tameoka, T. Kawase, M. Tabuchi, and Y. Takeda
    • Journal Title

      Physica Status Solidi(c)

      Volume: ol. 8, No.2 Issue: 2 Pages: 294-296

    • DOI

      10.1002/pssc.201000508

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Magnetic and Electronic Properties of Double Perovskite Sr_<2-x> La_x VMoO_62011

    • Author(s)
      H.Matsushima, H.Gotoh, Y.Takeda, K.Ueda, H.Asano
    • Journal Title

      Jpn.J.Appl.Phys

      Volume: 50

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Journal Article] X-ray characterization of GaN and related materials at growth temperatures-system design and measurements2011

    • Author(s)
      Y.Takeda, S.Fuchi, M.Tabuchi, 他
    • Journal Title

      IOP Conf.Series : Materials Science and Engineering

      Volume: 24

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator2011

    • Author(s)
      M.Tabuchi, H.Tameoka, T.Kawase, and Y.Takeda
    • Journal Title

      IOP Conf. Ser.

      Volume: Vol. 24 Pages: 12007-12007

    • Data Source
      KAKENHI-PROJECT-23360009
  • [Journal Article] X-ray characterization at growth temperatures of In_xGa_<1-x>N growth by MOVPE2011

    • Author(s)
      S.Fuchi, M.Tabuchi, Y.Takeda, 他
    • Journal Title

      Journal of Crystal Growth

      Volume: 318 Pages: 1143-1146

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator2011

    • Author(s)
      H.Tameoka, T.Kawase, M.Tabuchi, and Y.Takeda
    • Journal Title

      Physica Status Solidi C

      Volume: 8, No.2 Pages: 294-296

    • Data Source
      KAKENHI-PROJECT-23360009
  • [Journal Article] Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator2011

    • Author(s)
      M.Tabuchi, H.Tameoka, T.Kawase, Y.Takeda
    • Journal Title

      IOP Conf.Ser.

      Volume: 24 Pages: 12007-12007

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Journal Article] Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures2011

    • Author(s)
      S.Fuchi, M.Tabuchi, Y.Takeda, 他
    • Journal Title

      Journal of Crystal Growth

      Volume: 318 Pages: 1139-1142

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Status of the high brightness polarized electron source using transmission photocathode2011

    • Author(s)
      X.G.Jin, T.Ujihara, Y.Takeda, 他
    • Journal Title

      Journal of Physics : Conference Series

      Volume: 298 Pages: 12017-12017

    • DOI

      10.1088/1742-6596/298/1/012017

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23246003, KAKENHI-PROJECT-23246015, KAKENHI-PROJECT-23540340
  • [Journal Article] Ga and As composition profiles in InP/GaInAs/InP heterostructures-X-ray CTR scattering and cross-sectional STM measurements2010

    • Author(s)
      Y. Takeda, M. Tabuchi, and A. Nakamura
    • Journal Title

      Journal of Physics : Condensed Matter

      Volume: Vol.22 Issue: 47 Pages: 474011-474011

    • DOI

      10.1088/0953-8984/22/47/474011

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Ga and As composition profiles in InP/GaInAs/InP heterostructures-X-ray CTR scattering and cross-sectional STM measurements2010

    • Author(s)
      Y.Takeda, M.Tabuchi, 他
    • Journal Title

      Journal of Physics : Condensed Matter

      Volume: 22

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures2010

    • Author(s)
      K. Ninoi, G. Ju, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
    • Journal Title

      Journal of Crystal Growth

      Volume: Vol.318 Issue: 1 Pages: 1139-1142

    • DOI

      10.1016/j.jcrysgro.2010.10.201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] X-ray characterization at growth temperatures of InxGa1-xN growth by MOVPE2010

    • Author(s)
      G. Ju, K. Ninoi, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
    • Journal Title

      Journal of Crystal Growth

      Volume: Vol.318 Issue: 1 Pages: 1143-1146

    • DOI

      10.1016/j.jcrysgro.2010.11.051

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures2009

    • Author(s)
      M. Tabuchi, A. Mori, H. Tameoka, K. Fujii, and Y. Takeda
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: Vol.34, No.4 Pages: 593-595

    • NAID

      130004676258

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Study on Accumulation process of As atoms in InP/GaInAs/InP hetero-structures2009

    • Author(s)
      M.Tabuchi, Y.Takeda, 他
    • Journal Title

      Trans.Mat.Res.Soc.Jpn. 34

      Pages: 593-595

    • NAID

      130004676258

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System2009

    • Author(s)
      Y. Takeda, T. Mizuno, H. Kamiya, K. Ninoi, and M. Tabuchi
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: Vol.34, No.4 Pages: 585-588

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System2009

    • Author(s)
      Y.Takeda, M.Tabuchi, 他
    • Journal Title

      Trans.Mat.Res.Soc.Jpn. 34

      Pages: 585-588

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator2009

    • Author(s)
      M. Tabuchi, H. Tameoka, T. Kawase, and Y. Takeda
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: Vol.34, No.4 Pages: 589-5918

    • NAID

      130004676257

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Development of New X-ray CTR Scattering Measurement System Using Johansson Monochromator2009

    • Author(s)
      M.Tabuchi, Y.Takeda, 他
    • Journal Title

      Trans.Mat.Res.Soc.Jpn. 34

      Pages: 589-591

    • NAID

      130004676257

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Highly spin polarized Photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer(査読有)2008

    • Author(s)
      X. G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, T. Koshikawa
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 5039-5043

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] Buried Heterostructure of nitride semiconductors revealed by laboratory level X-ray CTR scattering2008

    • Author(s)
      Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: Vol.33 Pages: 547-550

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] X-ray CTR scattering, measurements using conventional X-ray source to study semiconductor hetero-interfaces2008

    • Author(s)
      Y. Maeda, M. TabucM, Y. TaKeda
    • Journal Title

      Trans. Mat. Ees. Soc. Jpn 33

      Pages: 591-594

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Journal Article] Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-ray GTR Scattering2008

    • Author(s)
      Y. Takeda, Y. Maeda, T. Mizuno, M. Tabuchi
    • Journal Title

      Trans. Mat. Res. Soc. Jpn 33

      Pages: 547-550

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semi- conductor hetero-interfaces2008

    • Author(s)
      Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda
    • Journal Title

      Trans. Mat. Res. Soc. Jpn. Vol. 33

      Pages: 591-594

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces2008

    • Author(s)
      Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi and Y. Takeda
    • Journal Title

      Trans. Mat. Res. Soc. Jpn 33

      Pages: 591-594

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Journal Article] X-ray CTR scatterittg measurements using conventional x-ray source to study semiconductor hetero-interfaces2008

    • Author(s)
      Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, Y. Takeda
    • Journal Title

      Trans. Mat. Res. Soc. Jpn. 33

      Pages: 591-594

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] “High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP super-lattice layer"(査読有)2008

    • Author(s)
      N. Yamamoto, T. Nakanishi, A. Mano, H. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X., Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara
    • Journal Title

      Journal of Applied Physics 103

      Pages: 64905-64905

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] “Super-high brightness and high spin-polarization photocathode"(査読有)2008

    • Author(s)
      X. Jin, N. Yamamoto, Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi, T. Saka, H. Horinaka, T. Kato, T. Yasue, T. Koshikawa
    • Journal Title

      Applied Physics Express 1・4

      Pages: 45002-45002

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] X-ray CTR scattering measurements using conventional X-ray source to study semiconductor hetero-interfaces2008

    • Author(s)
      Y. Maeda, T. Mizuno, A. Mori, M. Tabuchi, and Y. Takeda
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: Vol.33 Pages: 591-594

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Super-high brightness and high spin-polarization photocathode2008

    • Author(s)
      X. Jin, N. Yamamoto, Y. Nakagawa, A. Mano, T. Kato, M. Tanioku, T. Ujihara, Y. Takeda, S. Okumi, M. Yamamoto, T. Nakanishi, T. Saka, H. Horinaka, T. Kato, T. Yasue, T. Koshikawa
    • Journal Title

      Applied Physics Express Vol. 1, No. 4

    • NAID

      10025080044

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] Buried Heterostructure of nitride semi-conductors revealed by laboratory level X-ray CTR scattering2008

    • Author(s)
      Y. Takeda, Y. Maeda, T. Mizuno and M. Tabuchi
    • Journal Title

      Trans. Mat. Res. Soc. Jpn. Vol.33

      Pages: 547-550

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Buried Heterostructure of nitride semiconductors revealed by laboratory level X-ray CTR scattering2008

    • Author(s)
      Y. Takeda, Y. Maeda, T. Mizuno. M. Tabuchi
    • Journal Title

      Trans. Mat. Res. Soc. Jpn. 33

      Pages: 547-550

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Highly spin polarized Photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer2008

    • Author(s)
      X. G. Jin, Y. Maeda, T. Saka, M. Tanioku, S. Fuchi, T. Ujihara, Y. Takeda, N. Yamamoto, Y. Nakagawa, A. Mano, S. Okumi, M. Yamamoto, T. Nakanishi, H. Horinaka, T. Kato, T. Yasue, T. Koshikawa
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 5039-5043

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] High brightness and high polarization electron source using transmission photocathode with GaAs-GaAsP super- lattice layer2008

    • Author(s)
      N. Yamamoto, T. Nakanishi, A. Mano, H. Nakagawa, S. Okumi, M. Yamamoto, T. Konomi, X., Jin, T. Ujihara, Y. Takeda, T. Ohshima, T. Saka, T. Kato, H. Horinaka, T. Yasue, T. Koshikawa, M. Kuwahara
    • Journal Title

      Journal of Applied Physics vol. 103, No. 6

      Pages: 64905-64905

    • NAID

      120001442826

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] Study on buried interfaces in semiconductor heterostructures by X-ray reflectivity2007

    • Author(s)
      Y. Takeda and M. Tabuchi
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: Vol.32, No.1 Pages: 187-192

    • NAID

      130007922814

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] “Thermal emittance measurements for electron beams produced from bulk and superlattice NEA photocathodes"(査読有)2007

    • Author(s)
      N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Ryosuke, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T Nakanishi, M. Kuriki, C. Bo, T. Ujihara, Y. Takeda
    • Journal Title

      Journal of Applied Physics 102

      Pages: 24904-24904

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] Thermal emittance measurements for electron beams produced from bulk and superlattice NEA photocathodes2007

    • Author(s)
      N. Yamamoto, M. Yamamoto, M. Kuwahara, R. Ryosuke, T. Morino, K. Tamagaki, A. Mano, A. Utsu, S. Okumi, T. Nakanishi, M. Kuriki, C. Bo, T. Ujihara, Y. Takeda.
    • Journal Title

      Journal of Applied Physics vol. 102

      Pages: 24904-24904

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007

    • Author(s)
      A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
    • Journal Title

      Indium Phosphide and Related Materials 2007 IPRM2007

      Pages: 315-318

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] GaNおよび関運材料のX線非破壊その場評価システムの開発2007

    • Author(s)
      Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
    • Journal Title

      第7回赤崎記念研究センターシンポジウム資料 7

      Pages: 19-23

    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] The importance to reveal buried interfaces in the semicondutor heterostructure devices2007

    • Author(s)
      Y. Takeda and M. Tabuchi
    • Journal Title

      J. Phys. Conference Series 83

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Atomic scale analysis of MOVPE grown heterostructures by X-ray crystal truncation rod scattering measurement2007

    • Author(s)
      M. Tabuchi and Y. Takeda
    • Journal Title

      J. Cryst. Growth Vol. 298

      Pages: 12-17

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices2007

    • Author(s)
      Y. Takeda and M. Tabuchi
    • Journal Title

      Journal of Physics : Conference Series

      Volume: Vol.83 Pages: 12002-12002

    • DOI

      10.1088/1742-6596/83/1/012002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Analysis of In Distribution in GaInN/GaN Multilayer Structures by X-ray CTR Scattering2007

    • Author(s)
      M.Tabuchi, Y.Ohtake, Y.Takeda
    • Journal Title

      Transactions of the Materials Research Society of Japan 32巻・1号

      Pages: 219-222

    • NAID

      130007922817

    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface2007

    • Author(s)
      M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda
    • Journal Title

      Journal of Physics : Conference Series

      Volume: Vol.83 Pages: 12031-12031

    • DOI

      10.1088/1742-6596/83/1/012031

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Study on Buried Interfaces in Semiconductor Heterostructures by X-ray Reflectivity2007

    • Author(s)
      Y.Takeda, M.Tabuchi
    • Journal Title

      Transactions of the Materials Research Society of Japan 32巻・1号

      Pages: 187-192

    • NAID

      130007922814

    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices (invited)2007

    • Author(s)
      Y. Takeda, M. Tabuchi and J. Phys.
    • Journal Title

      Conference Series Vol.83

    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] The importance to reveal buried interfaces in the semiconductor heterostructure devices2007

    • Author(s)
      Y. Takeda and M. Tabuchi
    • Journal Title

      J. Phys. : Conference Series Vol. 83

      Pages: 12002-12002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface2007

    • Author(s)
      M. Tabuchi, A. Mori, Y. Ohtake, and Y. Takeda
    • Journal Title

      J. Phys. Conference Series 83

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] X-ray CTR scattering measurement to investigate the formation process of InP/GaInAs interface2007

    • Author(s)
      M. Tabuchi, A. Mori, Y. Ohtake and Y. Takeda
    • Journal Title

      J. Phys. : Conference Series Vol. 83

      Pages: 12031-12031

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Journal Article] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering2007

    • Author(s)
      M. Tabuchi, Y. Ohtake and Y. Takeda
    • Journal Title

      Trans. Mat. Res. Soc. Jpn. Vol.32 No.9

      Pages: 219-222

    • NAID

      130007922817

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Measurement of Compositional Grading at InP/GaInAs/InP Hetero-interfaces by X-ray CTR Scattering Using Synchrotron Radiation2007

    • Author(s)
      Y.Ohtake, T.Eguchi, S.Miyake, W.S.Lee, M.Tabuchi, Y.Takeda
    • Journal Title

      AIP Conference Proceedings 879巻

      Pages: 1619-1622

    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Study on buried interfaces in semiconductor heterostructures by X-ray reflectivity (invited)2007

    • Author(s)
      Y. Takeda and M. Tabuchi
    • Journal Title

      Trans. Mat. Res. Soc. Jpn. Vol. 32, No. 1

      Pages: 187-192

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Atomic Scale Analysis of MOVPE Grown Heterostructures by X-ray Crystal Truncation Rod Scattering Measurement2007

    • Author(s)
      M.Tabuchi, Y.Takeda
    • Journal Title

      J. Cryst. Growth 298巻

      Pages: 12-17

    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering2007

    • Author(s)
      M. Tabuchi, Y. Ohtake, and Y. Takeda
    • Journal Title

      Transactions of the Materials Research Society of Japan

      Volume: Vol.32, No.9 Pages: 219-222

    • NAID

      130007922817

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Formation of Patterned GaInAs/GaAs Hetero-structures Using Amorphous Arsenic Mask2007

    • Author(s)
      Y.Noritake, T.Yamada, M.Tabuchi, Y.Takeda
    • Journal Title

      J. Cryst. Growth 301-302巻

      Pages: 876-879

    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] The wideband light-emission aroun 800nm deom ternary InAsP quantum dots with an intentionally broadened size and composition distribuion2006

    • Author(s)
      S.Miyake, W.S.Lee, T.Ujihara, Y.Takeda
    • Journal Title

      The Indium Phosphide and Related Materials Conference (IPRM06) 18

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] Investigation of Hetero-interfaces Formed in InP/GaInAs/InP Structures with Different Growth Rates2006

    • Author(s)
      Y.Ohtake, T.Eguchi, S.Miyake, W.S.Lee, M.Tabuchi, Y.Takeda
    • Journal Title

      Indium Phosphide and Related Materials 2006 IPRM2006

      Pages: 290-293

    • Data Source
      KAKENHI-PROJECT-18106001
  • [Journal Article] Investigation of Hetero-Interfaces formed in InP/GaInAs/InP Structures with Different Growth Rates2006

    • Author(s)
      Y.Ohtake, T.Eguchi, S.Miyake, W.S.Lee, M.Tabuchi, Y.Takeda
    • Journal Title

      The Indium Phosphide and Related Materials Conference (IPRM06) 18

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy2006

    • Author(s)
      T.Ujihara, Y.Yoshida, W-S.Lee, Y.Takeda
    • Journal Title

      J.Cryst.Growth 289

      Pages: 89-95

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] Direct observation of trapping of photoexcited carriers in Er,O-codoped GaAs2006

    • Author(s)
      K.Nakamura, S.Takemoto, Y.Terai, M.Suzuki, A.Koizumi, Y.Takeda, M.Tonouchi, Y.Fujiwara
    • Journal Title

      Physica B 376-377

      Pages: 556-559

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique2005

    • Author(s)
      Y.Fujiwara, K.Nakamura, S.Takemoto, Y.Terai, M.Suzuki, A.Koizumi, Y.Takeda, M.Tonouchi
    • Journal Title

      Materials Research Society Symposium Proceedings, Rare-Earth Doping for Optoelectronic Applications (edited by T.Gregorkiewicz, Y.Fujiwara, M.Lipson and J.M.Zavada) (Materials Research Society, Pittsburgh) Vol.866

      Pages: 79-83

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] “Highly Polarized Electrons from GaAs-GaAsP and InGaAs-AlGaAs Strained Layer Superlattice Photocathodes"(査読有)2005

    • Author(s)
      T. Nishitani, T. Nakanishi, M. Yamamoto, S. Okumi, F. Furuta, M. Miyamoto, M. Kuwahara, N. Yamamoto, K. Naniwa, O. Watanabe, Y. Takeda, H. Kobayakawa, Y. Takashima, H. Horinaka, T. Matsuyama, K. Togawa, T. Saka, M. Tawada, T. Omori, Y. Kurihara, M. Yoshioka, K. Kato, T. Baba
    • Journal Title

      Journal of Applied Phys ics 97

      Pages: 94907-94907

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] Pump and probe reflection study on photoexcited carrier dynamics in Er,O-codoped GaAs2005

    • Author(s)
      Y.Fujiwara, K.Nakamura, A.Koizumi, Y.Takeda, M.Suzuki, M.Tonouchi
    • Journal Title

      Physics of Semiconductors, AIP Conference Proceedings 772

      Pages: 139-140

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE2005

    • Author(s)
      T.Ujihara, Y.Yoshida, W.S.Lee, R.Oga, Y.Takeda
    • Journal Title

      The Indium Phosphide and Related Materials Conference (IPRM05) 17

      Pages: 112-112

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] Perturbation method of analysis of crystal truncation rod dat2005

    • Author(s)
      I.K.Robbinson, M.Tabuchi, S.Hisadome, R.Oga, Y.Takeda
    • Journal Title

      Journal of Applied Crystallography 8

      Pages: 299-305

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360006
  • [Journal Article] Perturbation method of analysis of crystal truncation rod data2005

    • Author(s)
      I.K.Robbinson, M.Tabuchi, S.Hisadome, R.Oga, Y.Takeda
    • Journal Title

      Journal of Applied Crystallography 8

      Pages: 299-305

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16360006
  • [Journal Article] Electron spin resonance study of Zn-codoping effect on local structure of the Er-related centers in GaAs:Er,O2005

    • Author(s)
      M.Yoshida, K.Hiraka, H.Ohta, Y.Fujiwara, A.Koizumi, Y.Takeda
    • Journal Title

      Journal of Applied Physics 97(2)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Nonequilibrium carrier dynamics studied in Er,O-codoped GaAs by pump-probe reflection technique2005

    • Author(s)
      Y.Fujiwara, K.Nakamura, S.Takemoto, Y.Terai, M.Suzuki, A.Koizumi, Y.Takeda, M.Tonouchi
    • Journal Title

      Materials Research Society Symposium Proceedings 866

      Pages: 79-83

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Effects of S-doping and subsequent annealing on photoluminescence around 1.54μm from Er-containing ZnO2005

    • Author(s)
      Z.Zhou, N.Sato, T.Komaki, A.Koizumi, T.Komori, M.Morinaga, Y.Fujiwara, Y.Takeda
    • Journal Title

      Materials Science Forum 475-479

      Pages: 1125-1128

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] 選択成長により形成したInPメサ構造へのドットの形成とサイズ均一性の向上2005

    • Author(s)
      宇治原徹, 吉田義浩, 李祐植, 竹田美和
    • Journal Title

      応用物理学会学術講演会 66

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] Terahertz radiation from Er,O-codoped GaAs surface2005

    • Author(s)
      M.Suzuki, M.Tonouchi, A.Koizumi, Y.Takeda, K.Nakamura, Y.Fujiwara
    • Journal Title

      Physics of Semiconductors, AIP Conference Proceedings 772

      Pages: 131-132

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Behaviors of nonequilibrium carriers in Er,O-codoped GaAs for 1.5μm light-emitting devices with extremely stable wavelength2005

    • Author(s)
      Y.Fujiwara, A.Koizumi, K.Nakamura, M.Suzuki, Y.Takeda, M.Tonouchi
    • Journal Title

      Materials Science Forum 512

      Pages: 159-164

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Highly Polarized Electrons from GaAs-GaAsF and InGaAs-AlGaAs Strained Layer Super lattice Photocathodes2005

    • Author(s)
      T. Nishitani, T. Nakanishi, M. Yamamoto, S. Okumi, F. Furuta, M. Miyamoto, M. Kuwahara, N. Yamamoto, K. Naniwa, 0. Watanabe, Y. Takeda, H. Kobayakawa, Y. Takashima, H. Horinaka, T. Matsuyama, K. Togawa, T. Saka, M. Tawada, T. Omori, Y. Kurihara, M. Yoshioka, K. Kato, T. Baba
    • Journal Title

      Journal of Applied Physics 97

      Pages: 94907-94907

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Journal Article] ESR study of Zn codoping effect on the luminescence efficiency of the Er-2O center in GaAs:Er,O2005

    • Author(s)
      M.Yoshida, K.Hiraka, H.Ohta, A.Koizumi, Y.Fujiwara, Y.Takeda
    • Journal Title

      Physics of Semiconductors, AIP Conference Proceedings 772

      Pages: 121-122

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] メサ構造InPテンプレート基板へのInAs量子ドットの成長とサイズ制御2005

    • Author(s)
      宇治原 徹, 吉田義浩, 李祐植, 竹田美和
    • Journal Title

      信学技報 ED-105

      Pages: 23-26

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure OMVPE2004

    • Author(s)
      T.Yoshikane, A.Koizumi, S.Hisadome, M.Tabuchi, Y.Fujiwara, A.Urakami, K.Inoue, Y.Takeda
    • Journal Title

      Applied Surface Science 237

      Pages: 246-250

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum well2004

    • Author(s)
      I.Yamakawa, R.Oga, Y.Fujiwara, Y.Takeda, A.Nakamura
    • Journal Title

      Applied Physics Letters 84(22)

      Pages: 4436-4438

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] 希土類添加III-V族半導体による電流注入型発光デバイス2004

    • Author(s)
      藤原康文, 小泉淳, 竹田美和
    • Journal Title

      応用物理 73(2)

      Pages: 224-228

    • NAID

      10011963097

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Collection of reciprocal space maps using imaging plates at the Australian National Beamline Facility at the Photon Factory2004

    • Author(s)
      S.Mudie, K.Pavlov, M.Morgan, J.Hester, M.Tabuchi, Y.Takeda
    • Journal Title

      J.Synchrotron Radiation 11

      Pages: 406-413

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16360006
  • [Journal Article] Composition dependence of energy structure and lattice structure in InGaAs/GaP2004

    • Author(s)
      S.Fuchi, Y.Nonogaki, H.Moriya, A.Koizumi, Y.Fujiwara, Y.Takeda
    • Journal Title

      Physica E 21

      Pages: 36-44

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Fabrication of InAs quantum dots by droplet heteroepitaxy on periodic arrays of InP nanopyramids2004

    • Author(s)
      Y.Yoshida, R.Oga, W.S.Lee, Y.Fujiwara, Y.Takeda
    • Journal Title

      Thin Solid Films 464-465

      Pages: 240-243

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy2004

    • Author(s)
      M.Yoshida, K.Hiraka, H.Ohta, Y.Fujiwara, A.Koizumi, Y.Takeda
    • Journal Title

      Journal of Applied Physics 96(8)

      Pages: 4189-4196

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Formation of reactive center of rare-earth atom and application to optical devices-control of atom arrangements by crystal growth and fabrication of devices-2004

    • Author(s)
      Y.Takeda, Y.Fujiwara, M.Tabuchi, H.Ofuchi
    • Journal Title

      Materia Japan [in Japanese] 43(4)

      Pages: 312-317

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Photoluminescence around 1.54 μm from Er-containing ZnO at room temperature2004

    • Author(s)
      Z.Zhou, T.Komaki, A.Koizumi, T.Komori, M.Yoshino, M.Morinaga, Y.Fujiwara, Y.Takeda
    • Journal Title

      Materials Transactions 45(7)

      Pages: 2003-2007

    • NAID

      10013336252

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Injection-type light-emitting devices using rare-earth-doped III-V semiconductors2004

    • Author(s)
      Y.Fujiwara, A.Koizumi, Y.Takeda
    • Journal Title

      Oyo Buturi [in Japanese] 73(2)

      Pages: 224-228

    • NAID

      10011963097

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] X線 CTR散乱法と断面STMによるヘテロ界面形成過程の考察-OMVPE法によるInP/IhGaAs/INPの形成-2004

    • Author(s)
      竹田美和, 田渕雅夫, 大賀涼, 山川市朗, 中村新男
    • Journal Title

      信学技報 CPM2004-40

      Pages: 53-57

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] Atomic-scale observation of interfacial roughness and As-Pexchange in InGaAs/InP multiple quantum wellsc2004

    • Author(s)
      I.Yamakawa, R.Oga, Y.Fujiwara, Y.Takeda, A.Nakamura
    • Journal Title

      Applied Physics Letters 84(22)

      Pages: 4436-4438

    • Data Source
      KAKENHI-PROJECT-16656107
  • [Journal Article] 希土類元素発光中心の形成と光デバイスへの展開-結晶成長による原子配置の制御とデバイス作製-2004

    • Author(s)
      竹田美和, 藤原康文, 田渕雅夫, 大渕博宣
    • Journal Title

      まてりあ 43(4)

      Pages: 312-317

    • NAID

      10012905206

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Collection of reciprocal space maps using imaging plates at the Australian National Beamline Facility at the Photon Factory2004

    • Author(s)
      S.Mudie, K.Pavlov, M.Morgan, J.Hester, M.Tabuchi, Y.Takeda
    • Journal Title

      J. Synchrotron Radiation 11

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16360006
  • [Journal Article] AFM observation of OMVPE-grown ErP on InP substrates using a new organometal Er(EtCp)_32003

    • Author(s)
      T.Akane, S.Jinno, Y.Yang, T.Hirata, T.Kuno, Y.Isogai, N.Watanabe, Y.Fujiwara, A.Nakamura, Y.Takeda
    • Journal Title

      Applied Surface Science 216

      Pages: 537-541

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light emitting diodes grown by organometallic vapor phase epitaxy2003

    • Author(s)
      A.Koizumi, Y.Fujiwara, A.Urakami, K.Inoue, T.Yoshikane, Y.Takeda
    • Journal Title

      Applied Physics Letters 83(22)

      Pages: 4521-4523

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Room-temperature 1.5μm electroluminescence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy2003

    • Author(s)
      Y.Fujiwara, A.Koizumi, A.Urakami, T.Yoshikane, K.Inoue, Y.Takeda
    • Journal Title

      Materials Science and Engineering B 105(1-3)

      Pages: 57-60

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] SEM observation of overgrown InP on ErP/InP (001), InP (111)A, and InP (111)B2003

    • Author(s)
      T.Hirata, T.Akane, S.Jinno, T.Kuno, Y.Yang, Y.Fujiwara, A.Nakamura, Y.Takeda
    • Journal Title

      Materials Science in Semiconductor Processing 6

      Pages: 473-476

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Room-temperature 1.54μm light emission from Er,O-codoped GaAs/GaInP LEDs grown by low-pressure organometallic vapor phase epitaxy2003

    • Author(s)
      A.Koizumi, Y.Fujiwara, K.Inoue, A.Urakami, T.Yoshikane, Y.Takeda
    • Journal Title

      Japanese Journal of Applied Physics 42(4B)

      Pages: 2223-2225

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O/GaInP DH structure light-emitting diodes2003

    • Author(s)
      A.Koizumi, Y.Fujiwara, A.Urakami, K.Inoue, T.Yoshikane, Y.Takeda
    • Journal Title

      Physica B 340-342

      Pages: 309-314

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light emitting diodes grown by organometallic vapor phase epitaxy2003

    • Author(s)
      A.Koizumi, Y.Fujiwara, A.Urakami, K.Inone, T.Yoshikane, Y.Takeda
    • Journal Title

      Applied Physics Letters 83(22)

      Pages: 4521-4523

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy2003

    • Author(s)
      Y.Fujiwara, A.Koizumi, K.Inoue, A.Urakami, T.Yoshikane, Y.Takeda
    • Journal Title

      Materials Research Society Symposium Proceedings, Progress in Semiconductors II, Electronic and Optoelectronic Applications 744

      Pages: 149-154

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Fluorescence EXAFS analysis for ErP grown on by organometallic vapor phase epitaxy using a new organometal Er(EtCp)_32003

    • Author(s)
      H.Ofuchi, T.Akane, S.Jinno, Y.Yang, N.Kuno, T.Hirata, M.Tabuchi, Y.Fujiwara, Y.Takeda
    • Journal Title

      Materials Science in Semiconductor Processing 6

      Pages: 469-472

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy2003

    • Author(s)
      Y.Fujiwara, Y.Nonogaki, R.Oga, A.Koizumi, Y.Takeda
    • Journal Title

      Applied Surface Science 216

      Pages: 564-568

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy2003

    • Author(s)
      Y.Fujiwara, A.Koizumi, K.Inoue, A.Urakami, T.Yoshikane, Y.Takeda
    • Journal Title

      Materials Research Society Symposium Proceedings, Progress in Semiconductors II--Electronic and Optoelectronic Applications (edited by B.D.Weaver, M.O.Manasreh, C.C.Jagadish and S.Zollner) (Materials Research Society, Pittsburgh) Vol.744

      Pages: 149-154

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] AFM observation of OMVPE grown ErP on InP (001), (111)A and (111)B substrates2003

    • Author(s)
      T.Kuno, T.Akane, S.Jinno, T.Hirata, Y.Yang, Y.Isogai, N.Watanabe, Y.Fujiwara, A.Nakamura, Y.Takeda
    • Journal Title

      Materials Science in Semiconductor Processing 6

      Pages: 461-464

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Journal Article] Growth sequence dependence of GaAs-on-GaInP interface characteristics in GaAs/GaInP/GaAs structures grown by low-pressure organometallic vapor phase epitaxy2003

    • Author(s)
      A.Koizumi, Y.Fujiwara, K.Inoue, T.Yoshikane, A.Urakami, Y.Takeda
    • Journal Title

      Applied Surface Science 216

      Pages: 560-563

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15360164
  • [Patent] 電子顕微鏡2013

    • Inventor(s)
      田中信夫、中西彊、竹田美和、浅野秀文、齋藤晃、宇治原徹、桑原真人
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-02-06
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Patent] 電子顕微鏡2013

    • Inventor(s)
      田中信夫、中西彊、竹田美和、浅野秀文、齋藤晃、宇治原徹、桑原真人
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2013-01-10
    • Overseas
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Patent] スピン偏極電子発生素子及びその作製方法2012

    • Inventor(s)
      金 秀光、竹田美和他
    • Industrial Property Rights Holder
      金 秀光、竹田美和他
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2012-108186
    • Filing Date
      2012-05-01
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Patent] スピン偏極電子発生素子及びその作製方法2012

    • Inventor(s)
      金 秀光, 渕 真悟, 竹田 美和
    • Industrial Property Rights Holder
      金 秀光, 渕 真悟, 竹田 美和
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2012-108186
    • Filing Date
      2012
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Patent] 半導体フォトカソード2012

    • Inventor(s)
      金 秀光, 竹田 美和, 山本 将博, 宮島 司, 本田 洋介
    • Industrial Property Rights Holder
      金 秀光, 竹田 美和, 山本 将博, 宮島 司, 本田 洋介
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2012-221001
    • Filing Date
      2012
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Patent] 半導体フォトカソード2012

    • Inventor(s)
      金 秀光、竹田美和他
    • Industrial Property Rights Holder
      金 秀光、竹田美和他
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2012-221001
    • Filing Date
      2012-10-01
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Patent] 電子顕微鏡2011

    • Inventor(s)
      田中信夫、中西彊、竹田美和、浅野秀文、齋藤晃、宇治原徹、桑原真人
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2012-508141
    • Filing Date
      2011-02-22
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Patent] スピン偏極電子源2008

    • Inventor(s)
      宇治原徹, 金秀光, 竹田美和, 中西彊, 山本尚人, 坂貴, 加藤俊宏
    • Industrial Property Rights Holder
      名古屋大学, 大同工業大学, 大同特殊鋼
    • Industrial Property Number
      2008-079292
    • Filing Date
      2008-03-25
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Patent] スピン偏極電子発生装置2006

    • Inventor(s)
      宇治原徹, 竹田美和, 中西彊, 山本将博, 陳博
    • Industrial Property Rights Holder
      名古屋大学
    • Industrial Property Number
      2006-060673
    • Filing Date
      2006-03-07
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-15204019
  • [Presentation] Pulse operation of spin-polarized photocathodes2014

    • Author(s)
      Y. Takeda
    • Organizer
      Workshop on Novel Surface Microscopy and Spectroscopy 2014 in OECU
    • Place of Presentation
      Eki-Mae Campus, Osaka Electro-Communication University,
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Pulse operation of spin-polarized photocathodes2014

    • Author(s)
      Y.Takeda
    • Organizer
      Workshop on Novel Surface Microscopy and Spectroscopy 2014 in OECU
    • Place of Presentation
      Eki-Mae Campus, Osaka Electro-Communication University
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] 半導体光陰極を用いたTEMの空間コヒーレンス測定2014

    • Author(s)
      桑原真人、南保由人、鮫島健輔 、楠聡一郎、齋藤晃、宇治原徹、浅野秀文、竹田美和、田中信夫
    • Organizer
      日本物理学会 第69回年次大会
    • Place of Presentation
      東海大学湘南キャンパス
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] 半導体光陰極を用いたTEMの空間コヒーレンス測定2014

    • Author(s)
      桑原真人、南保由人、鮫島健輔、楠総一郎、齋藤晃、宇治原徹、浅野秀文、竹田美和、田中信夫
    • Organizer
      日本物理学会第69回年次大会
    • Place of Presentation
      東海大学 湘南キャンパス
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Spin-polarized transmission electron microscope toward an analysis of sub-picosecond dynamics2013

    • Author(s)
      M. Kuwahara, S. Kusunoki, Y. Nambo, K. Saitoh, T. Ujihara, H. Asano, Y. Takeda, T. Nakanishi and N. Tanaka
    • Organizer
      The 3rd Banff Meeting on Structural Dynamics Ultrafast Dynamics with X-Ray and Electrons
    • Place of Presentation
      Banff, Alberta, Canada
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] in-situ and ex-situ X-ray measurements on buried heterostructures for semiconductor devices2013

    • Author(s)
      Y.Takeda
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Doshisha University, Kyotanabe Campus, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] スピン偏極パルス同期TEM像の取得2013

    • Author(s)
      桑原真人、楠総一郎、南保由人、鮫島健輔、齋藤晃、宇治原徹、竹田美和、中西彊、田中信夫
    • Organizer
      日本顕微鏡学会第69回学術講演会
    • Place of Presentation
      ホテル阪急エキスポパーク (吹田市)
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Development of spin-polarized transmission electron microscope2013

    • Author(s)
      M. Kuwahara, S. Kusunoki, Y. Nambo, K. Sameshima, K. Saitoh, T. Ujihara, H. Asano, Y. Takeda, T. Nakanishi , and N. Tanaka
    • Organizer
      9the International Symposium on Atomic Level Characterizations for New Materials and Devices '13
    • Place of Presentation
      Sheraton Kona (Hawaii)
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] スピン偏極パルスTEM2013

    • Author(s)
      桑原真人, 楠総一郎, 南保由人,鮫島健輔, 齋藤晃, 宇治原徹, 浅野秀文, 竹田美和, 田中信夫
    • Organizer
      日本顕微鏡学会第57回シンポジウム
    • Place of Presentation
      ウインクあいち
    • Year and Date
      2013-11-16
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] スピン偏極パルスTEM2013

    • Author(s)
      桑原真人、楠総一郎、南保由人、鮫島健輔、齋藤晃、宇治原徹、浅野秀文、竹田美和、田中信夫
    • Organizer
      日本顕微鏡学会第57回シンポジウム
    • Place of Presentation
      ウィンクあいち (名古屋市)
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Nano-scale characterization of GaAsP/GaAs strained superlattice structures by nano-beam electron diffraction2013

    • Author(s)
      X.G.Jin, H.Nakahara, K.Saitoh, N.Tanaka, Y.Takeda
    • Organizer
      17^<th> International Conference on Crystal Growth and Epitaxy
    • Place of Presentation
      Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Atomic Level In-Situ Monitoring during Epitaxial Growth of Group III Nitrides2013

    • Author(s)
      G.X. Ju, S. Fuchi, M. Tabuchi, Y. Takeda, Y. Honda, M. Yamaguchi, and
    • Organizer
      第74回応用物理学関係連合講演会
    • Place of Presentation
      同志社大学京田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Continuous In situ X-ray Reflectance on InxGa1-xN Single Quantum Well by MOVPE2013

    • Author(s)
      G.X. Ju, Y. Honda, S. Fuchi, M. Tabuchi, Y. Takeda, H. Amano
    • Organizer
      OPTICS & PHOTONICS International Congress 2013, Conference on LED and Its Industrial Application’13 (LEDIA’13)
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] スピン偏極透過電子顕微鏡による電子線空間干渉性2013

    • Author(s)
      楠総一郎、桑原真人、宇治原徹、浅野秀文、竹田美和、齋藤晃、田中信夫
    • Organizer
      日本物理学会秋季大会
    • Place of Presentation
      ホテル阪急エキスポパーク (吹田市)
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Novel development of very high brightness and highly spin-polarized electron gun with compact 3D spin manipulator for SPLEEM2013

    • Author(s)
      T.Koshikawa, T.Yasue, M.Suzuki, K.Tsuno, S.Goto, X.G.Jin, and Y.Takeda
    • Organizer
      IVC-19/ICSS-15 AND ICN+T
    • Place of Presentation
      Paris, France
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] スピン偏極透過電子顕微鏡による電子線空間干渉性2013

    • Author(s)
      楠総一郎, 桑原真人, 宇治原徹,浅野秀文, 竹田美和, 齋藤晃, 田中信夫
    • Organizer
      日本物理学会秋季大会
    • Place of Presentation
      徳島大学常三島キャンパス
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Development of spin-polarized transmission electron microscope2013

    • Author(s)
      M. Kuwahara, S. Kusunoki, Y. Nambo, K. Sameshima, K. Saitoh, T. Ujihara, H Asano, Y Takeda, T Nakanishi and N Tanaka
    • Organizer
      9th International Symposium on Atomic Level Characterizations for New Materials and Devices
    • Place of Presentation
      Hawaii, USA
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Continuous in situ X-ray reflectivity measurement on InGaN epitaxial growth by MOVPE2013

    • Author(s)
      G.X Ju, Y. Honda, M. Tabuchi, Y. Takeda, H. Amano
    • Organizer
      The 17th International Conference on Crystal Growth (ICCGE-17)
    • Place of Presentation
      Warsaw, Poland
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] スピン偏極パルスTEMによるパルス同期TEM像の取得2013

    • Author(s)
      桑原真人,南保由人,楠聡一郎,齋藤晃,宇治原徹,竹田美和,中西彊,田中信夫
    • Organizer
      日本顕微鏡学会第69回学術講演会
    • Place of Presentation
      ホテル阪急エキスポパーク.
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] In situ X-ray investigation on InGaN SQWs with various growth conditions of quantum barrier by MOVPE2013

    • Author(s)
      G.X Ju, Y. Honda, M. Tabuchi, Y. Takeda, H. Amano
    • Organizer
      10th International Conference on Nitride Semiconductors (ICNS-10)
    • Place of Presentation
      Washington DC , USA
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] In situ X-ray investigation on InGaN SQWs with various growth conditions o of GaN barriers by MOVPE2013

    • Author(s)
      G.X. Ju, S. Fuchi, M. Tabuchi, Y. Takeda, H. Amano
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Doshisha University, Kyotanabe Campus, Japan.
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Picosecond electron bunch from GaAs/GaAsP strained superlattice photocathode2012

    • Author(s)
      Xiuguang Jin, Yoshikazu Takeda他
    • Organizer
      8th international workshop on LEEM/PEEM
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Spin-polarized and Pulsed TEM Using a Laser-driven Semiconductor Photocathode2012

    • Author(s)
      N. Tanaka, M. Kuwahara, K. Saitoh, S. Kusunoki, T. Ujihara, H. Asano, Y. Takeda and T. Nakanishi
    • Organizer
      Microscopy & Microanalysis 2012
    • Place of Presentation
      Phoenix, USA
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] High performance spin-polarized photocathode for microscopy2012

    • Author(s)
      Xiuguang Jin, Yoshikazu Takeda他
    • Organizer
      14th Joint Vacuum Conference
    • Place of Presentation
      Dubrovnik, Croatia
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Effects of mis-orientation of crystal planes on thickness modulation in GaAs/GaAsP strained superlattice2012

    • Author(s)
      Xiuguang Jin, Yoshikazu Takeda他
    • Organizer
      16th International Conference on Metal Organic Vapor Phase Epitaxy,
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Effect of compressive strain relaxation on surface morphology in GaAsP growth on GaP2012

    • Author(s)
      Xiuguang Jin, Yoshikazu Takeda他
    • Organizer
      16th International Conference on Metal Organic Vapor Phase Epitaxy,
    • Place of Presentation
      Busan, Korea
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] スピン偏極TEMにおけるNEAフォトカソードからの低エネルギー分散ビームの生成2012

    • Author(s)
      楠聡一郎、桑原真人、宇治原徹、浅野秀文、竹田美和、中西彊、齋藤晃、田中信夫
    • Organizer
      日本顕微鏡学会第68回学術講演会
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] 窒化物半導体結晶の特異構造形成を理解するためのX線によるその場観察装置の開2012

    • Author(s)
      田渕雅夫、益田征典、安西孝太、鞠光旭、二木浩之、森康博、渕真悟、竹田美和
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学早稲田キャンパス
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Presentation] スピン偏極透過電子顕微鏡の開発とその性能2012

    • Author(s)
      桑原真人、楠聡一郎、宇治原徹、浅野秀文、竹田美和、中西彊、齋藤晃、田中信夫
    • Organizer
      日本顕微鏡学会第68回学術講演会
    • Place of Presentation
      つくば国際会議場.
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Fabrication of high brightness and highly spin-polarized semiconductor photocathodes2012

    • Author(s)
      Y.Takeda
    • Organizer
      OECU Workshop on Novel Development of Magnetic Microscopy and Smart Spintronics Materials
    • Place of Presentation
      大阪電気通信大学(大阪府)(招待講演)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] High performance spin-polarized photocathode using strain compensated superlattice2012

    • Author(s)
      Xiuguang Jin, Yoshikazu Takeda他
    • Organizer
      8th international workshop on LEEM/PEEM
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] GaAs に吸着したCs が作るNEA 表面のXAFS測定2012

    • Author(s)
      坪田光治、恵良淳史、田渕雅夫、竹田美和、西谷智博
    • Organizer
      第28回PF シンポジウム、UG-01-08
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Presentation] スピン偏極透過電子顕微鏡の開発とその性能2012

    • Author(s)
      桑原真人、楠聡一郎、宇治原徹、浅野秀文、竹田美和、中西彊、齋藤晃、田中信夫
    • Organizer
      日本顕微鏡学会第68回学術講演会
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] 窒化物半導体結晶の特異構造形成を理解するためのX 線によるその場観察装置の開発2012

    • Author(s)
      田渕雅夫、益田征典、安西孝太、鞠光旭、二木浩之、森康博、渕真悟、竹田美和
    • Organizer
      第59回応用物理学関係連合講演会、15p-F11-3
    • Place of Presentation
      早稲田大学 早稲田キャンパス
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Presentation] Spin-polarized and Pulsed TEM Using a Laser-driven Semiconductor Photocathode2012

    • Author(s)
      N. Tanaka, M. Kuwahara, K. Saitoh, S. Kusunoki, T. Ujihara, H. Asano, Y. Takeda and T. Nakanishi
    • Organizer
      Microscopy & Microanalysis 2012
    • Place of Presentation
      Phoenix, USA.
    • Invited
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] スピン偏極TEMにおけるNEAフォトカソードからの低エネルギー分散ビームの生成2012

    • Author(s)
      楠聡一郎、桑原真人、宇治原徹、浅野秀文、竹田美和、中西彊、齋藤晃、田中信夫
    • Organizer
      日本顕微鏡学会第68回学術講演会
    • Place of Presentation
      つくば国際会議場.
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] GaAs/GaAsP 歪み超格子の成長におけるGaAs(001)面と微傾斜面が層厚変調へ及ぼす影響2012

    • Author(s)
      金 秀光, 中原 弘貴, 齋藤 晃, 坂 貴, 田中 信夫, 竹田 美和
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学, 17p-DP3-5
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] GaAs/GaAsP歪み補償超格子構造による高機能スピン偏極電子源の高量子効率化2012

    • Author(s)
      金, 竹田, 他
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Analysis of Cs/GaAs NEA surface by XAFS2012

    • Author(s)
      K.Tsubota, A.Era, M.Tabuchi, T.Nishitani, Y.Takeda
    • Organizer
      The 15th Inter. Conf. X-ray Absorption Fine Structure (XAFS15), I1274
    • Place of Presentation
      Bejin, China
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Presentation] GaAs/GaAsP 歪み補償超格子構造による高機能スピン偏極電子源の高量子効率化2012

    • Author(s)
      金 秀光,真野 篤志, 市橋 史朗, 山本 尚人, 竹田 美和
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学, 17p-DP3-4
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Initial emittance and temporal response measurement for GaAs based photocathodes2012

    • Author(s)
      Shunya Mataubara, Xiuguang Jin, Yoshikazu Takeda他
    • Organizer
      International Particle Accelerator Conference 2012
    • Place of Presentation
      New Orleans, Louisiana, USA,
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Initial emittance and temporal response measurement for GaAs based photocathodes2012

    • Author(s)
      S.Matsuba, Y.Honda, T.Miyajima, T.Uchiyama, M.Yamamoto, X.G.Jin, Y.Takeda
    • Organizer
      International Particle Accelerator Conference 2012
    • Place of Presentation
      Ernest N. Morial Convention Center, New Orleans Louisiana, MOPPP035
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Development of high performance photocathodes for microscopy and accelerator2012

    • Author(s)
      Xiuguang Jin, Yoshikazu Takeda他
    • Organizer
      Photocathode Physics for Photoinjectors (P3)
    • Place of Presentation
      Cornell University, Ithaca, NY, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Observation of Position Dependence of InP/GaInAsP/InP Quantum Well Structure Grown on Pattern-Masked Substrate2012

    • Author(s)
      M.Tabuchi, K.Fujii, O.Sakata, M.Sugiyama, and Y.Takeda
    • Organizer
      Interational Union of Materials Research Scientists Inter. Conf. Electronic Materials 2012 (IUMRS-ICEM 2012), D7-101756
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Presentation] In situ X-ray measurements of MOVPE growth of InxGa1-xN single quantum well2012

    • Author(s)
      渕、田渕、竹田, 他
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] レーザー励起半導体電子源を用いた30kVパルスTEMの開発2012

    • Author(s)
      田中信夫、桑原真人、楠聡一郎、浅野秀文、宇治原徹、齋藤晃、竹田美和、中西彊
    • Organizer
      日本顕微鏡学会第68回学術講演会
    • Place of Presentation
      つくば国際会議場.
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Development of novel compact spin-polarized electron gun2012

    • Author(s)
      Takanori Koshikawwa, Xiuguang Jin, Yoshikazu Takeda他
    • Organizer
      8th international workshop on LEEM/PEEM
    • Place of Presentation
      Hong Kong
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] レーザー励起半導体電子源を用いた30kVパルスTEMの開発2012

    • Author(s)
      田中信夫、桑原真人、楠聡一郎、浅野秀文、宇治原徹、齋藤晃、竹田美和、中西彊
    • Organizer
      日本顕微鏡学会第68回学術講演会
    • Place of Presentation
      つくば国際会議場
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] GaAs/GaAsP歪み超格子の成長におけるGaAs(001)面と微傾斜面が層厚変調へ及ぼす影響2012

    • Author(s)
      金, 竹田, 他
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Development of X-ray diffractometer for X-ray CTR measurement using Johansson monochromator and quick measurements2011

    • Author(s)
      M.Tabuchi, Y.Takeda, 他
    • Organizer
      11th Akasaki Research Center Symposium
    • Place of Presentation
      名古屋大学(愛知県)(招待講演)
    • Year and Date
      2011-12-09
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Highly polarized and high quantum efficiency electron source using transmission-type photocathode2011

    • Author(s)
      X.G.Jin, T.Ujihara, Y.Takeda, 他
    • Organizer
      2^<nd> International Particle Accelerator Conference
    • Place of Presentation
      San Sebastian (Spain)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] ヨハンソン分光結晶を用いたX 線CTR 散乱の短時間測定系の開発2011

    • Author(s)
      二木浩之、益田征典、森康博、田渕雅夫、竹田美和
    • Organizer
      応用物理学会結晶工学分科会主催2011年・年末講演会、17
    • Place of Presentation
      学習院大学創立100周年記念会館
    • Year and Date
      2011-12-15
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Presentation] Super-high brightness and high spin-polarization photocathode for spin-polarized LEEM and pulse spin-TEM2011

    • Author(s)
      X.G.Jin, Y.Takeda, 他
    • Organizer
      The 19^<th> International Conference on Electronic Properties of Two-dimensional Systems and the 15^<th> Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Florida (USA)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] AlGaAs中間層及びSi_3N_4反射防止膜の導入による透過型GaAs/GaAsP歪み超子スピン偏極フォトカソードの量子効率向上2011

    • Author(s)
      金, 竹田, 他
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Super-high brightness and high spin-polarization photocathode for spin-polarized LEEM and pulse spin-TEM2011

    • Author(s)
      X.G.Jin, A.Mano, N.Yamamoto, M.Suzuki, T.Yasue, T.Koshikawa, N.Tanaka, and Y.Takeda
    • Organizer
      The 19^<th> International Conference on Electronic Properties of Two-Dimensional Systems and the 15^<th> Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Tallahassee, Florida, USA, Th-1-5
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] 透過光型フォトカソードを用いた高スピン偏極・高輝度電子源の開発現状2011

    • Author(s)
      金, 宇治原, 竹田, 他
    • Organizer
      第8回日本加速器学会
    • Place of Presentation
      つくば国際会議場(茨城県)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] 蛍光収量法によるNEA 表面作製中のGaAs上へのCs 吸着量の測定2011

    • Author(s)
      坪田光治、恵良淳史、田渕雅夫、竹田美和、西谷智博
    • Organizer
      応用物理学会結晶工学分科会主催2011年・年末講演会、18
    • Place of Presentation
      学習院大学創立100周年記念会館
    • Year and Date
      2011-12-15
    • Data Source
      KAKENHI-PROJECT-23360009
  • [Presentation] スピン偏極パルスTEM用電子源と照射系の開発2011

    • Author(s)
      桑原真人、中西彊、竹田美和、浅野秀文、齋藤晃、宇治原徹、田中信夫
    • Organizer
      日本顕微鏡学会第67回学術講演会
    • Place of Presentation
      福岡
    • Year and Date
      2011-05-16
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Development of spin-polarized and pulsed TEM2011

    • Author(s)
      M. Kuwahara, T. Nakanishi, Y. Takeda, K. Saito, T. Ujihara, H. Asano, and N. Tanaka
    • Organizer
      Electron Microscopy and Analysis Group Conference 2011
    • Place of Presentation
      Birmingham UK
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] 4 times improvement of quantum efficiency in high spin-polarization transmission-type Photocathode2011

    • Author(s)
      X.G.Jin, S.Fuchi, T.Ujihara, Y.Takeda, 他
    • Organizer
      33^<rd> International Free Electron Laser Conference
    • Place of Presentation
      上海(中国)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] AlGaAs 中間層及びSi_3N_4 反射防止膜の導入による透過型GaAs/GaAsP 歪み超格子スピン偏極フォトカソードの量子効率向上2011

    • Author(s)
      市橋 史朗,金 秀光,山本 尚人,真野 篤志, 桒原 真人,渕 真悟,宇治原 徹,竹田 美和
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学, 31a-ZA-13
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Injection system of spin-polarized transmission microscopy2011

    • Author(s)
      M. Kuwahara, S. Kusunoki, F. Ichihashi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi, and N. Tanaka
    • Organizer
      International Symposium on EcoTopia Science 2011
    • Place of Presentation
      Nagoya
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Effect of inhomogeneous strain distribution on the thickness modulation in GaAs/GaAsP strained superlattice2011

    • Author(s)
      X.G.Jin, T.Ujihara, Y.Takeda, 他
    • Organizer
      24^<th> International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Kyoto (Japan)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] NEA-GaAsフォトカソードのエミッタンス及び時間応答の測定2011

    • Author(s)
      金, 竹田, 他
    • Organizer
      第8回日本加速器学会
    • Place of Presentation
      つくば国際会議場(茨城県)
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] Superlattice photocathode development for low emittance2010

    • Author(s)
      M. Kuwahara, M, Yamamoto, X. G. Jin, T. Ujihara, T, Nakanishi, Y. Takeda
    • Organizer
      The 17th IFSM International Microscopy Congress
    • Place of Presentation
      Rio de Janeilo, Brazil
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] New X-ray CTR scattering measurement system using conventional X-ray source for in-situ observation of OMVPE growth of nitride semiconductor heterostructures2010

    • Author(s)
      K. Ninoi, G. Ju, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
    • Organizer
      The 16th International Conference on Crystal Growth(ICCG-16)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] In_xGa_<1-x>N grown by MOVPE installed in the CTR scattering measurement system2010

    • Author(s)
      渕、田渕、竹田, 他
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X-Ray Characterization of Semiconductor Heterostructures at the Atomic-Level2010

    • Author(s)
      Y. Takeda and M. Tabuchi
    • Organizer
      2010 International Symposium on Crystal Growth
    • Place of Presentation
      Hanyang University, Seoul, Korea
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Growth and characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system2010

    • Author(s)
      Y. Takeda, H. Kamiya, K. Ninoi, G. X. Ju, S. Fuchi, and M. Tabuchi
    • Organizer
      9th Akasaki Research Center Symposium
    • Place of Presentation
      Hotel Rubura Ohzan, Nagoya, Japan
    • Year and Date
      2010-03-12
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Growth temperature and room temperature characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system2010

    • Author(s)
      Y. Takeda, K. Ninoi, G. X. Ju, S. Fuchi, and M. Tabuchi
    • Organizer
      10th Akasaki Research Center Symposium
    • Place of Presentation
      Hotel Rubura Ohzan, Nagoya, Japan
    • Year and Date
      2010-11-26
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] New X-ray CTR scattering measurement system using conventional X-ray source for in-situ observation of OMVPE growth of nitride semiconductor heterostructures2010

    • Author(s)
      S.Fuchi, M.Tabuchi, Y.Takeda, 他
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG-16)
    • Place of Presentation
      Beijing (China)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Growth temperature and room temperature characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system2010

    • Author(s)
      Y.Takeda, S.Fuchi, M.Tabuchi, 他
    • Organizer
      10th Akasaki Research Center Symposium
    • Place of Presentation
      Nagoya (Japan)(招待講演)
    • Year and Date
      2010-11-26
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator2010

    • Author(s)
      Y.Takeda, M.Tabuchi, 他
    • Organizer
      The 37th International Symposium Compound Semi-conductors (ISCS2010)
    • Place of Presentation
      Kagawa (Japan)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 半導体成長環境下におけるその場X線反射率測定2010

    • Author(s)
      渕、田渕、竹田, 他
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 窒化物半導体のOMVPE成長過程その場測定用実験室系X線CTR散乱測定装置の開発2010

    • Author(s)
      渕、田渕、竹田, 他
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X-ray CTR scattering measurement at growth temperature of In_xGa_<1-x>N grown by MOVPE2010

    • Author(s)
      S.Fuchi, M.Tabuchi, Y.Takeda, 他
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG-16)
    • Place of Presentation
      Beijing (China)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Development of X-ray diffractometer for quick X-ray CTR scattering observation of thin-film crystal growth equipped with focusing monochromator2010

    • Author(s)
      Y.Takeda, S.Fuchi, M.Tabuchi, 他
    • Organizer
      The 16th International Conference on Crystal Growth (ICCG-16)
    • Place of Presentation
      Beijing (China)(招待講演)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X-ray characterization of semiconductor heterostructures at the atomic-level2010

    • Author(s)
      Y.Takeda, M.Tabuchi
    • Organizer
      2010 International Symposium on Crystal Growth
    • Place of Presentation
      Seoul (Korea)(招待講演)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Superlattice photocathode development for low emittance2010

    • Author(s)
      M. Kuwahara, M. Yamamoto, X. G. Jin, T. Ujihara, T. Nakanishi, Y. Takeda
    • Organizer
      Photocathode Physics for Photoinjectors
    • Place of Presentation
      NY, USA
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] スピン偏極パルス透過電子顕微鏡の開発12010

    • Author(s)
      田中信夫, 中西彊, 竹田美和, 浅野秀文, 斎藤晃, 宇治原徹, 桒原真人
    • Organizer
      日本顕微鏡学会66回学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Growth and characterization of nitride semiconductors by MOVPE reactor installed in the X-ray CTR measurements system2010

    • Author(s)
      竹田美和, 田渕雅夫, 他
    • Organizer
      9^<th> Akasaki Research Center Symposium
    • Place of Presentation
      ルブラ王山、名古屋
    • Year and Date
      2010-03-12
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Pulsed spin-polarized electron source toward a transmission electron microscope2010

    • Author(s)
      M. Kuwahara, T. Nakanishi, N. Tanaka, Y. Takeda, H. Asano, K. Saito, T. Ujihara
    • Organizer
      The 17th IFSM International Microscopy Congress
    • Place of Presentation
      Rio de Janeilo, Brazil
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] Development of X-ray diffractometer for in-situ observation of thin-film crystal growth equipped with focusing monochromator2010

    • Author(s)
      H. Tameoka, T. Kawase, M. Tabuchi, and Y. Takeda
    • Organizer
      The 37th International Symposium Compound Semiconductors(ISCS2010)
    • Place of Presentation
      FrC3-7, Takamatsu Symbol Tower, Kagawa, Japan
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X-ray CTR scattering measurement at growth temperature of InxGa1-xN grown by MOVPE2010

    • Author(s)
      G. Ju, K. Ninoi, H. Kamiya, S. Fuchi, M. Tabuchi, and Y. Takeda
    • Organizer
      The 16th International Conference on Crystal Growth(ICCG-16)
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] スピン偏極パルスTEM用電子源の特性評価2010

    • Author(s)
      桒原真人, 中西彊, 田中信夫, 竹田美和 浅野秀文, 斎藤晃, 宇治原徹
    • Organizer
      日本顕微鏡学会66回学術講演会
    • Place of Presentation
      名古屋国際会議場
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] スピン偏極パルスTEM用電子源の特性評価2010

    • Author(s)
      桑原真人, 中西彊, 田中信夫, 竹田美和, 浅野秀文, 斎藤晃, 宇治原徹
    • Organizer
      日本顕微鏡学会66回学術講演会
    • Place of Presentation
      Rio de Janeilo, Brazil
    • Data Source
      KAKENHI-PROJECT-21221005
  • [Presentation] 半導体OMVPE成長過程のその場X線反射率測定の試み2010

    • Author(s)
      渕、田渕、竹田, 他
    • Organizer
      応用物理学会結晶工学分科会主催2010年・年末講演会
    • Place of Presentation
      学習院大学(東京都)
    • Year and Date
      2010-12-17
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 半導体のOMVPE成長のその場測定用実験室系X線CTR散乱測定装置の開発2009

    • Author(s)
      田渕雅夫, 竹田美和, 他
    • Organizer
      応用物理学会 結晶工学分科会
    • Place of Presentation
      学習院大学
    • Year and Date
      2009-12-11
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 結晶成長のその場観察を目指した新しいX線CTR散乱装置の開発2009

    • Author(s)
      田渕雅夫, 竹田美和, 他
    • Organizer
      第39回 結晶成長学会国内会議
    • Place of Presentation
      名古屋大学
    • Year and Date
      2009-11-14
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 実験室系X線CTR散乱測定装置におけるソーラスリットの効果2009

    • Author(s)
      田渕雅夫, 竹田美和, 他
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Influence of Growth Rate and Temperature on InP/GaInAs Interface Structure Analyzed by X-ray CTR Scattering Measurement2009

    • Author(s)
      H. Tameoka, A. Mori, M. Tabuchi and Y. Takeda
    • Organizer
      2009 Indium Posphide and Related Materials (IPRM2009)
    • Place of Presentation
      Beach, CA, USA
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] 半導体における埋もれた界面の重要性とその測定・解析法2009

    • Author(s)
      竹田美和, 田渕雅夫
    • Organizer
      第56回応用物理学会関係連合講演会, X線・中性子による埋もれた界面研究の最前線
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] ヨハンソン分光結晶を用いたX線CTR散乱測定装置の開発2009

    • Author(s)
      田渕雅夫, 竹田美和, 他
    • Organizer
      埋もれた界面のX線・中性子回折に関するワークショップ
    • Place of Presentation
      筑波大学東京キャンパス
    • Year and Date
      2009-07-01
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 結晶成長その場観察を目指した新しいX線CTR散乱測定装置の開発2009

    • Author(s)
      田渕雅夫, 竹田美和, 他
    • Organizer
      応用物理学会 結晶工学分科会
    • Place of Presentation
      学習院大学
    • Year and Date
      2009-12-11
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 半導体における埋もれた界面の重要性とその測定・解析法2009

    • Author(s)
      竹田美和, 田渕雅夫
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement2009

    • Author(s)
      H. Tameoka, A. Mori, M. Tabuchi, and Y. Takeda
    • Organizer
      2009 Indium Phosphide and Related Materials(IPRM2009)
    • Place of Presentation
      MA2. 4, Newport Beach, CA, USA
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] InP/GalnAs/InPヘテロ界面におけるAs原子吸着効果の温度依存性のX線CTR散乱法による解析2009

    • Author(s)
      森晶子, 為岡博, 藤井克典, 川瀬達也, 由渕雅夫, 竹田美和
    • Organizer
      第22回日本放射光学会年会・放射光科学合同シンポジウム
    • Place of Presentation
      東京大学本郷キャンパス
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] InP/GaInAs/IhPヘテロ構造におけるAs原子蓄積過程の検討2009

    • Author(s)
      田渕雅夫, 竹田美和, 他
    • Organizer
      埋もれた界面のX線・中性子回折に関するワークショップ
    • Place of Presentation
      筑波大学東京キャンパス
    • Year and Date
      2009-07-13
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] InP/GalnAs/InPヘテロ界面におけるAs原子吸着効果の温度依存性のX線CTR散乱法による解析2009

    • Author(s)
      森晶子, 為岡博, 藤井克典, 川瀬達也, 田渕雅夫, 竹田美和
    • Organizer
      第22回日本放射光学会年会・放射光科学合同シンポジウム
    • Place of Presentation
      東京大学本郷キャンパス
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Influence of growth rate and temperature on InP/GaInAs interface structure analyzed by X-ray CTR scattering measurement2009

    • Author(s)
      H. Tameoka, A. Mori, M. Tabuchi and Y. Takeda
    • Organizer
      2009 Indium Phosphide and Related Materials (IPRM2009)
    • Place of Presentation
      MA2.4, Newport Beach, CA, USA
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Influence of Growth Rate and Temperature on InP/GaInAs Interface Structure Analyzed by X-ray CTR Scattering Measurement2009

    • Author(s)
      田渕雅夫, 竹田美和, 他
    • Organizer
      2009 Indium Posphide and Related Materials
    • Place of Presentation
      Newport Beach, CA, 米
    • Year and Date
      2009-05-11
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 半導体における埋もれた界面の重要性とその測定・解析法2009

    • Author(s)
      竹田美和, 田渕雅夫
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] 半導体における埋もれた界面の重要性とその測定・解析法(invited)2009

    • Author(s)
      竹田美和, 田渕雅夫
    • Organizer
      第56回応用物理学会関係連合講演会, 「X線・中性子による埋もれた界面研究の最前線」
    • Place of Presentation
      筑波大学(31a-D-3)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] ヨハンソン分光結晶を用いた実験室系X線CTR散乱測定装置の開発2009

    • Author(s)
      為岡博, 川瀬達也, 田渕雅夫, 竹田美和
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] InP/GaInAs/InPヘテロ界面におけるAs原子吸着効果の温度依存性のX線CTR散乱法による解析2009

    • Author(s)
      森晶子, 為岡博, 藤井克典, 川瀬達也, 田渕雅夫, 竹田美和
    • Organizer
      第22回日本放射光学会年会・放射光科学合同シンポジウム
    • Place of Presentation
      東京大学本郷キャンパス
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] ヨハンソン分光結晶を用いた実験室系X線CTR散乱測定装置の開発2009

    • Author(s)
      為岡博, 川瀬達也, 田渕雅夫, 竹田美和
    • Organizer
      第56回応用物理学会関係連合講演会
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] ヨハンソン分光結晶を用いた実験室系X線CTR散乱測定装置の開発2009

    • Author(s)
      為岡博, 川瀬達也, 田渕雅夫, 竹田美和
    • Organizer
      第56回応用物理学会関係連合講演会.
    • Place of Presentation
      筑波大学
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定2008

    • Author(s)
      水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      第27回電子材料シンポジウム(EMS27)
    • Place of Presentation
      ラフォーレ修善寺
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds2008

    • Author(s)
      Y. Takeda, T. Mizuno, H. Kamiya, M. Tabuchi
    • Organizer
      8th Akasaki Research Center Symp.
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2008-11-20
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds2008

    • Author(s)
      Y. Takeda, T. Mizuno, H. Kamiya, and M. Tabuchi
    • Organizer
      8th Akasaki Research Center Symposium
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2008-11-20
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds (invited)2008

    • Author(s)
      Y. Takeda, T. Mizuno, H. Kamiya and M. Tabuchi
    • Organizer
      8th Akasaki Research Center Symp.
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2008-11-20
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 成長温度と成長速度がInP/GaInAs 界面に及ぼす影響のX 線CTR 散乱法による解析2008

    • Author(s)
      為岡博, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      応用物理学会結晶工学分科会主催 2008年年末講演会
    • Place of Presentation
      学習院大学
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] 成長温度と成長速度がInP/GaInAs界面に及ぼす影響のX線CTR散乱法による解析2008

    • Author(s)
      為岡博, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] 成長温度と成長速度がInP/GalnAs界面に及ぼす影響のX線CTR散乱法による解析2008

    • Author(s)
      為岡博, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature effects2008

    • Author(s)
      A. Mori, H. Tameoka, M. Tabuchi, Y. Takeda
    • Organizer
      2008 Indium Phosphide and Related Materials(IPRM2008)
    • Place of Presentation
      Versailles, France
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定(EMS賞受賞)2008

    • Author(s)
      水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      第27回電子材料シンポジウム(EMS27)
    • Place of Presentation
      ラフォーレ修善寺(K-15)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X-ray OTR scattering analysis of as accumulation on GaInAs surface and growth temperature effects2008

    • Author(s)
      A. Mori, H. Tameoka, M. TabucLi, Y. Takeda
    • Organizer
      Indium Posphide and Related Materials 2008
    • Place of Presentation
      Versailles, France
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] 成長温度と成長遠度がInP/GalnAs界面に及ぼす影響のX線CTR散乱法による解析2008

    • Author(s)
      為岡博, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] OMVPE成長の半導体ヘテロ界面その場観察に向けた実験室系X線CTR散乱測定2008

    • Author(s)
      水野哲也, 前田義紀, 神谷肇, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      第27回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ修善寺
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] MOVPE reactor and X-ray CTR measurement system for GaN and related compounds2008

    • Author(s)
      Y. Takeda, T. Mizuno, H. Kamiya, M. Tabuohi
    • Organizer
      8th Akasaki Research Center Symp
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2008-11-20
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] InP/GalnAs界面におけるAs原子吸着効果の温度依存性-X線CTR散乱法による解析-2008

    • Author(s)
      森晶子, 為岡博, 川瀬達也, 藤井克憲, 田渕雅夫, 竹田美和
    • Organizer
      応用物理学会結晶工学分科会年末講演会
    • Place of Presentation
      学習院大学
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature Effects2008

    • Author(s)
      A. Mori, H. Tameoka, M. Tabuchi, and Y. Takeda
    • Organizer
      2008 Indium Phosphide and Related Materials 2008(IPRM2008)
    • Place of Presentation
      WeP6, Versailles, France
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] InP/GaInAs界面におけるAs 原子吸着効果の温度依存性-X線CTR散乱法による解析-2008

    • Author(s)
      森晶子, 為岡博, 川瀬達也, 藤井克憲, 田渕雅夫, 竹田美和
    • Organizer
      応用物理学会結晶工学分科会主催 2008年年末講演会
    • Place of Presentation
      学習院大学
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] X-ray CTR scattering analysis of as accumulation on GaInAs surface and growth temperature effects2008

    • Author(s)
      A. Mori, H. Tameoka, M. Tabuchi, Y. Takeda
    • Organizer
      Indium Posphide and Related Materials 2008 (IPRM2008)
    • Place of Presentation
      Versailles, France
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] 成長温度と成長速度がInP/GalnAs界面に及ぼす影響のX線CTR散乱法による解析2008

    • Author(s)
      為岡博, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      応用物理学会結晶工学分科会年末講演会
    • Place of Presentation
      学習院大学
    • Year and Date
      2008-12-11
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 異なる成長温度での InP/GaInAs界面 As 原子分布に対する成長中断の影響2008

    • Author(s)
      森晶子、為岡博、田渕雅夫、竹田美和
    • Organizer
      第55回応用物理学会関係連合講演会
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] 窒化物半導体の埋もれたヘテロ構造2007

    • Author(s)
      竹田美和, 田渕雅夫
    • Organizer
      第18回日本MRS学術シンポジウム
    • Place of Presentation
      日本大学理工学部駿河台校舎
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] X-ray CTR scattering measurements to reveal the effect of the growth interruption processes on the InP/InGaAs interface structures2007

    • Author(s)
      M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
    • Organizer
      The 15th International Conference on CrystalGrowth, o07
    • Place of Presentation
      Salt Lake City, USA
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 実験室系のX線源を用いたX線CTR散乱測定による半導体へテロ界面の評価2007

    • Author(s)
      前田義紀, 水野哲也, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      第37回結晶成長国内会議(NCCG-37)
    • Place of Presentation
      北海道大学(06aC09)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Development of in-situ X-ray non-invasive characterization system on GaN and related compounds2007

    • Author(s)
      Y. Takeda, Y. Maeda, T. Mizuno, and M. Tabuchi
    • Organizer
      7th Akasaki Research Center Symposium-To the New Horizon of the Nitride Research-
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2007-10-19
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE2007

    • Author(s)
      M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
    • Organizer
      The 15th International Conference on Crystal Growth, o06
    • Place of Presentation
      Salt Lake City, USA
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] InP/GaInAs界面における原子の分布広がり発生メカニズム2007

    • Author(s)
      森晶子, 大竹悠介, 田渕雅夫, 竹田美和
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工大
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007

    • Author(s)
      A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
    • Organizer
      The 19th International Conference on Indium Phosphide and Related Materials, PB29
    • Place of Presentation
      Matsue, Japann
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 埋もれた界面の制御について2007

    • Author(s)
      竹田美和
    • Organizer
      埋もれた界面のX線・中性子回折に関するワークショップ2007
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE2007

    • Author(s)
      M. Tabuchi, Y. Ohtake, A. Mori and Y. Takeda
    • Organizer
      The 15th International Conference on Crystal Growth (ICCG15)
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] InP/GaInAs界面における原子の分布広がり発生メカニズム2007

    • Author(s)
      森晶子、大竹悠介、田渕雅夫、竹田美和
    • Organizer
      第68回応用物理学会学術講演会8a-H-3
    • Place of Presentation
      北海道工大
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 実験室系のX線回折装置による半導体へテロ界面のX線CTR散乱測定2007

    • Author(s)
      前田義紀, 水野哲也, 森晶子, 竹田美和, 田渕雅夫
    • Organizer
      第18回日本MRS学術シンポジウム
    • Place of Presentation
      日本大学理工学部駿河台校舎(G-P04-M)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 窒化物半導体の埋もれたヘテロ構造(invited)2007

    • Author(s)
      竹田美和, 田渕雅夫
    • Organizer
      第18回日本M R S 学術シンポジウム
    • Place of Presentation
      日本大学理工学部駿河台校舎(G-06-I)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Development of in-situ X-ray non-invasive characterization system on GaN and related compounds (invited)2007

    • Author(s)
      Y. Takeda, Y. Maeda, T. Mizuno and M. Tabuchi
    • Organizer
      7th Akasaki Research Center Symp.
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2007-10-09
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 実験室系のX線源を用いたX線CTR散乱測定による半導体ヘテロ界面の評価2007

    • Author(s)
      前田義紀, 水野哲也, 森晶子, 田渕雅夫, 竹田美和
    • Organizer
      第37回結晶成長国内会議(NCCG-37), 06aC09
    • Place of Presentation
      北海道大学
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Mechanisms of As distribution in InP on GaInAs layer grown by OMVPE2007

    • Author(s)
      M. Tabuchi, Y. Ohtake, A. Mori, and Y. Takeda
    • Organizer
      The 15th International Conference on Crystal Growth(ICCG15)
    • Place of Presentation
      o06, Salt Lake City, Utah, USA
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X-ray CTR scattering measurements to reveal the effect of the growth interruption processes on the InP/InGaAs interface structures2007

    • Author(s)
      M. Tabuchi, Y. Ohtake, A. Mori and Y. Takeda
    • Organizer
      The 15th International Conference on Crystal Growth (ICCG15)
    • Place of Presentation
      Salt Lake City, Utah, USA
    • Data Source
      KAKENHI-PROJECT-19360006
  • [Presentation] 埋め込まれたInAsナノドットのGI-SAXSを用いた構造解析2007

    • Author(s)
      久野啓志、大高幹雄、中野聡志、奥田浩司、落合庄治郎、則竹陽介、鈴木裕史、竹田美和、田渕雅夫
    • Organizer
      第18回日本MRS学術シンポジウム、G-P05-M
    • Place of Presentation
      日本大学理工学部駿河台校舎
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 異なる成長温度でのInP/Ga_<0.47>In_<0.53>As界面As原子分布に対する成長中断の影響2007

    • Author(s)
      森晶子、為岡博、田渕雅夫、竹田美和
    • Organizer
      第55回応用物理学会関係連合講演会、29aZT-5
    • Place of Presentation
      日本大学理工学部船橋キャンパス
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 埋もれた界面の制御について2007

    • Author(s)
      竹田美和
    • Organizer
      埋もれた界面のX線・中性子解析に関するワークショップ2007
    • Place of Presentation
      東北大学金属材料研究所
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 実験室系のX線回折装置による半導体ヘテロ界面のX線CTR散乱測定2007

    • Author(s)
      前田義紀、水野哲也、森晶子、竹田美和、田渕雅夫
    • Organizer
      第18回日本MRS学術シンポジウム、G-P04-M
    • Place of Presentation
      日本大学理工学部駿河台校舎
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 窒化物半導体の埋もれたヘテロ構造2007

    • Author(s)
      竹田美和、田渕雅夫
    • Organizer
      第18回日本MRS学術シンポジウム、G-06-I(Invited)
    • Place of Presentation
      日本大学理工学部駿河台校舎
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Desorption time of As adsorbed on GaInAs surface analyzed by X-ray CTR scattering2007

    • Author(s)
      A. Mori, Y. Ohtake, T. Ujihara, M. Tabuchi, and Y. Takeda
    • Organizer
      2007 Indium Phosphide and Related Materials 2007(IPRM2007)
    • Place of Presentation
      PB29, Kunibiki Messe, Matsue, Japan
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X線CTR散乱法によるGaInN/GaN量子井戸構造中のIn組成分布の解析2006

    • Author(s)
      大竹悠介, 田渕雅夫, 竹見政義, 岡川広明, 竹田美和
    • Organizer
      第67回応用物理学会学術講演会
    • Place of Presentation
      立命館大学(30p-C-9)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] X 線C T R 散乱測定によるGaInN/GaN多層構造中のIn原子分布の解析2006

    • Author(s)
      田渕雅夫, 大竹悠介, 竹田美和
    • Organizer
      第17回日本M R S 学術シンポジウム
    • Place of Presentation
      日本大学理工学部駿河台校舎(G-P02)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] Analysis of In distribution in GaInN/GaN multilayer structures by X-ray CTR scattering (invited)2006

    • Author(s)
      M. Tabuchi and Y. Takeda
    • Organizer
      6th Akasaki Research Center Symp.
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2006-12-05
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] In-situ measurementon GaInN/GaN heterostructures growth by X-ray reflectivity

    • Author(s)
      Y. Takeda, G.X. Ju, S. Fuchi, H. Amano
    • Organizer
      13th Akasaki Research Center Symposium
    • Place of Presentation
      Nagoya University
    • Data Source
      KAKENHI-PROJECT-23246003
  • [Presentation] X線反射率による半導体ヘテロ構造の埋もれた界面の研究(invited)

    • Author(s)
      竹田美和
    • Organizer
      第17回日本M R S 学術シンポジウム
    • Place of Presentation
      (G-02P02)
    • Data Source
      KAKENHI-PROJECT-18106001
  • [Presentation] 可視光およびX線を用いた窒化物半導体結晶成長原子レベルその場観察

    • Author(s)
      鞠光旭, 渕真悟, 田渕雅夫, 竹田美和, 本田善央, 山口雅史, 天野浩
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-23360009
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    # of Collaborated Products: 0 results
  • 55.  浅野 秀文 (50262853)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 32 results
  • 56.  齋藤 晃 (50292280)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 32 results
  • 57.  桑原 真人 (50377933)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 34 results
  • 58.  藤田 静雄 (20135536)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 59.  野田 進 (10208358)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 60.  藤嶋 昭 (30078307)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 61.  伊東 謙太郎 (20020977)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 62.  TATSUTA Toshiaki
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 63.  HARADA Jimpei
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 64.  TAKAHEI Ken-ichiro
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 65.  澤井 巳喜夫
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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