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SHIRAKI Yasuhiro  白木 靖寛

ORCIDConnect your ORCID iD *help
Researcher Number 00206286
Affiliation (based on the past Project Information) *help 2010 – 2012: 東京都市大学, 総合研究所, 教授
2009: Musashi Institute of Technology, 副学長
2004: 武蔵工業大学, 総合研究所, 教授
2001 – 2003: The University of Tokyo, Graduate Scool, School of Engineering, Professor, 大学院・工学系研究科, 教授
2002: 東京大学, 工学系研究科・物理工学専攻, 教授 … More
2001: 東京大学, 先端技術研究センター, 教授
1990 – 2000: 東京大学, 先端科学技術研究センター, 教授
1999: 東京大学, 先端化学技術研究センター, 教授
1999: 東京大学, 科学技術研究センター, 教授
1994: 先端科学技術研究センター, 教授
1993 – 1994: The University of Tokyo, 先端研センター, 教授
1993 – 1994: 東京大学, 先端科学技術センター, 教授
1993: 東京大学, 生端科学技術研究センター, 教授
1989 – 1991: 東京大学, 先端科学技術センター, 助教授
1989 – 1990: 東京大学, 先端科学技術研究センター, 助教授 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Applied materials / Science and Engineering / Applied materials science/Crystal engineering
Except Principal Investigator
Applied materials science/Crystal engineering / Applied optics/Quantum optical engineering / Applied materials / 固体物性Ⅱ(磁性・金属・低温) / Electronic materials/Electric materials / 物理計測・光学 / 固体物性 / Science and Engineering
Keywords
Principal Investigator
SiGe / シリコンゲルマニウム / 量子ドット / neighboring confinement structure / 間接遷移型半導体 / 隣接閉じ込め構造 / 光エレクトロニクス / 無フォノン発光 / AlGaP / 量子細線 … More / 量子井戸 / Si / 微小共振器 / 島状成長 / 光物性 / 電子物性 / 人工IV族半導体 / ブル-シフト / メゾスコピック領域 / island growth / Quantum dot / Optelectronics / exciton / strain field / 局在 / 励起子分子 / DBR / 自己形成Geドット / 不均一歪み場 / 励起子 / 歪み場 / selective epitaxy / quantum dots / Stranski-Krastanow成長様式 / ガスソース分子線エピタキシ- / Si(311)面 / SiGeの混晶 / 不純物散乱 / 界面ラフネス散乱 / 変調ドープ構造 / イオン注入 / SiGe混晶 / 選択成長 / no phonon transition / indireck semiconductors / アルミニウムガリウム燐 / quantum dot / quantum wire / quantum well / 超格子 / electron-wave reflectivity / tunnel barrier / heterointerface / resonant capture / 低次元量子構造 / 電子波ミラー / 量子力学的反射率 / ヘテロ界面 / 共鳴電子捕獲 / 非発光再結合 / 過剰電子 / 非発光性再結合 / トンネル障壁 / 共鳴電子捕獲時間 / atomic details on solid surfaces / Ge heterostructure / mechanism of interfacial mixing / Ge islanding / kinetic phase / scanning tunneling microscopy (STM) / surface structure / epitaxial growth / 慣性式移動方式 / 高速トンネル分光 / 半導体清浄表面 / 原子層ド-ピング / アンチモン(Sb) / Si(111)、Si(100) / モリブデンブル-ブロンズ / 超高真空 / 選択的吸着 / 5×5構造 / エピタキシャル成長 / 島形成 / 微視的機構 / 表面構造 / エピタキシャル / Geヘテロ構造 / 走査型トンネル顕微鏡 / 結晶成長 / 原子尺度 / 高誘電率絶縁膜 / マイクロディスク / 光電子融合デバイス / 導波路 / 歪み / シミュレーション / フォトニック結晶 / ゲルマニウム / 初期酸化 / リン吸着デジタル制御 / 自己触媒 / 電界効果トランジスタ / 変調ドーピング / 低温Si層 / CMP / 発光ダイオード / 電界効果型トランジス / 電界効果型トランジスタ / 超高速光・電子デバイス / 原子精度要素プロセス / 高性能トランジスタ / 集積回路 / シリコン / 極微細構造 / 真空一貫リソグラフィ / 極微細線 / 化学エッチング / 収束イオン線 / 電子波干渉 / 電子線描画法 / 一次元閉じ込め / ウェットエッチング / GaAs極微細線 / AlGaAs / 電子線描画 / 超微細構造 / 電子波 … More
Except Principal Investigator
半導体 / MOVPE / RF-MBE / 光第2高調波発生 / 波長変換 / 非線形光学 / GaAsN / SiGe / 疑似位相整合 / Frequency Conversion / Second-Harmonic Generation / Nonlinear Optics / 核スピン / 同位体 / Si / 窒化物半導体 / InGaPN / InGaAsN / 差周波発生 / 分極反転 / 化合物半導体 / Quasi Phase Matching / ヘテロ構造 / 窒化物混晶半導体 / Semiconductor / 間接遷移型半導体 / 評価技術 / プロセス / デバイス / 量子構造 / 窒化ガリウム / ワイドギャップ化合物半導体 / 有機金属気相成長法 / Quantum Hall Effects / 非局所性伝導 / エッジ状態 / フォトルミネッセンス / フォトリフレクタンス / 量子ドット / 量子細線 / MBE / 立方晶GaN / GaN / キンク / パイエルスポテンシャル / ヘテロエピタキシャル / ミスフィット転位 / 人工格子 / 精密制御技術 / 界面反応 / 接触抵抗 / 金属ー半導体界面 / strain relaxation / ion implantation / chemical mechanical polishing / high mobility / virtual substrate / SiGe heterostructure / 科学機械研磨法 / 擬似基 / 歪み緩和 / イオン注入 / 化学機械研磨法 / 超高移動度FET / 擬似基板 / Si系歪みヘテロ構造 / heterostructure / photoreflectance / cubic indium nitride / cubic gallium nitride / cubic nitride semiconductors / nitride semiconductors / 深い準位 / 立法晶AlGaN / 立法晶GaN / 選択成長 / GaAs / 立方晶AlGaN / 立方晶窒化インジウム / 立方晶窒化ガリウム / 立方晶窒化物半導体 / indirect semiconductor / electron localization / charged exciton / modulation doping / semiconductor quantum well / semiconductor quantum dot / microscopic photoluminescence / 励起子分子 / 局在励起子 / 電子局在 / 帯電励起子 / 変調ドーピング / 半導体量子井戸 / 半導体量子ドット / 顕微フォトルミネッセンス / huge bandgap bowing / slloy semiconductors / diluted nitride alloy / 巨大ボウイング / 有機金属気相成長 / GaNAs / GaNP / 巨大バンドギャッブボウイング / InAsN / 巨大バンドギャップボウイング / 混晶半導体 / III-V-N型窒化物混晶 / Molecular beam epitaxy / Quasi phase matching / Polarization inversion / Compound semiconductor / Difference-frequency generation / Optical parametric effect / Wavelength conversion / Nonlinear optics / 非線形工学 / 導波路型デバイス / 分子線エピタキシー / 擬似位相整合 / 光パラメトリック効果 / Antiphase Domain / Sublattice Reversal / Domain Inversion / Compound Semiconductor / 差調波発生 / アンチフェイズドメイン / 副格子交換 / ferroelectric / field effect transistor / quantum chemistry calculation / low contact resistance / high aspect ratio / point defect relaxation process / ultra thin Si oxide / 無損傷化 / 欠陥緩和 / ヘテロ界面 / 欠損測定 / Siプロセス量子化学研究 / 高アスペクト比プロセス / 低抵抗コンタクト / 極薄酸化膜 / Ge歪超格子 / Si高精度化プロセス / 強誘電体 / 電界効果型トランジスタ / 量子化学計算 / 低抵抗コンタクト抵抗 / 高アスペクト比 / 点欠陥緩和過程 / 極薄Si酸化膜 / Organic Material / Heterostrucure / 有機材料 / METALORGANIC VAPOR PHASE EPITAXY / GALLIUM NITRADE / GALLIUM PHOSPHIDE / METASTABLE ALLOY SEMICONDUCTOR / WIDEGAP COMPOUND SEMICONDUCTOR / GaPN ALLOY / NITRIDE ALLOY SEMICONDUCTOR / MOVPE法 / ガリウムリン / 準安定混晶半導体 / GaPN混晶 / Characterization / Process / Device / Quantum structure / Dissipation in quantum Hall devices / Breakdown of the Quantum Hall effects / Dispersion relation of edge states / Edge current / Cyclotron emission / Edge states / エッジ励起状態 / エッジ・マグネトプラズマ共鳴 / サイクロトロン共鳴 / 強磁場下2次元電子系 / 局在と非局在状態 / 量子ホール効果状態 / ホール電流 / 化学ポテンシャル・エッジ電流 / 量子ホール効果のブレークダウン / サイクロトロン共鳴吸収 / エネルギー散逸 / 量子ホール効果のブレイクダウン / エッジ状態の分散 / エッジ電流 / サイクロトロン発光 / 量子ホール効果 / lacalized level / quantum effect / surface state / brillouin zone / disoredering / luminescence / superlattice / indirect gap semiconductor / グリルアン領域折り返し / 界面効果 / サイズ効果 / ブリルアン領域折り返し / 不規則超格子 / 人工局在準位 / 局在準位 / 量子効果 / 界面準位 / ブリルアン領域 / 不規則 / 発光 / 超格子 / characterization / process / device / quantum structure / semiconductor / Lithography / Inorganic Resist / Micro Fabrication / Waveguiding Device / Organic Crystal / リソグラフィ- / リソグラフィー / 水溶性無機レジスト / 微細加工 / 光導波路素子 / 光学2高調波発生 / 有機結晶 / Tunable wavelength / Far-infrared laser / Germanium laser / 波長可変 / 遠赤外レ-ザ- / ゲルマニウムレ-ザ- / Visible-Light-Emitting Material / Structural Transformation / Gallium Arsenide Phosphide / Gallium Nitride / Atomic Layer Epitaxy / Widegap Compound Semiconductor / Movpe / 結晶構造交換 / 青色発光半導体レ-ザ / 可視光発光材料 / 結晶構造変換 / ガリウム砒素燐 / 原子層エピタキシ- / Nonlocal Transport / Nonequilibrium Population / Edge States / メソスコピック系 / 位相干渉長 / 整数量子ホ-ル効果 / 量子ホ-ル効果 / 非平衡分布 / 量子現象 / 強磁場 / 量子井戸 / 量子光物性 / ナノ構造 / 量子コンピュータ / 量子エレクトロニクス / 電子デバイス / バンドラインアップ / ガリウム砒素リン / 半導体超格子 / ワイス振動 / 層状物質 / TEM / 電子波干渉素子 / C_<60> / ルミネセンス / ファンデァワールス成長 / MOCVD / GaPN / エピタキシー機構 / 構造変換 / ヘテロエピタキシー / ナイトライド / 転位フィルター効果 / 転位すベリ / 転位フィルタ-効果 / 転位すべり / 表面偏析 / 超高濃度ド-ピング / ミリサイド / 界面電気伝導 / 界面固相反応 / コンタクト抵抗率 / 界面精密制御 / 不純物ド-ピング / 金属一半導体界面 / 不純物ドーピング Less
  • Research Projects

    (40 results)
  • Research Products

    (73 results)
  • Co-Researchers

    (80 People)
  •  Demonstration of innovative Germanium optoelectronic devices and developments of simulation technologiesPrincipal Investigator

    • Principal Investigator
      SHIRAKI Yasuhiro
    • Project Period (FY)
      2009 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tokyo City University
  •  Formation of virtual substrates for strained SiGe heterostructures and its application to high mobility FETs

    • Principal Investigator
      NAKAGAWA Kiyokazu
    • Project Period (FY)
      2001 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      University of Yamanashi
  •  Cubic Nitride Semiconductor Heterostructures and Their Application to Optical and Electronic Devices

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2000 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  核スピン濃度と分布を制御した半導体超構造の作製と評価

    • Principal Investigator
      伊藤 公平
    • Project Period (FY)
      1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Keio University
  •  半導体ナノ構造の量子光物性とその応用

    • Principal Investigator
      荒川 泰彦, 三浦 登
    • Project Period (FY)
      1999 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  人工IV族半導体の物性制御と超高速光・電子デバイスへの応用Principal Investigator

    • Principal Investigator
      白木 靖寛
    • Project Period (FY)
      1999 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      Musashi Institute of Technology
      The University of Tokyo
  •  人工IV族半導体の形成と光・電子物性制御Principal Investigator

    • Principal Investigator
      白木 靖寛
    • Project Period (FY)
      1999 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Development of Compound-Semiconductor-Based Nonlinear Optical Devices Using Sublattice Reversal Epitaxy

    • Principal Investigator
      KONDO Takashi
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      The University of Tokyo
  •  Study on Enhancement of Non-Phonon Excitonic Luminescence by using Inhomogeneous strain fieldsPrincipal Investigator

    • Principal Investigator
      SHIRAKI Yasuhiro
    • Project Period (FY)
      1999 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Huge Bandgap-Bowing Effect in III-V-N Type Nitride Alloy Semiconductors and its Applications

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      1999 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Research on spatially and temporally resolved spectroscopy of semiconductor quantum structures by using ulta small probe light

    • Principal Investigator
      USAMI Noritaka
    • Project Period (FY)
      1999 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Tohoku University
      The University of Tokyo
  •  核スピン濃度と分布を制御した半導体超構造の作製と評価

    • Principal Investigator
      伊藤 公平
    • Project Period (FY)
      1998
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • Research Institution
      Keio University
  •  核スピン濃度と分析を制御した半導体超構造の作製と評価

    • Principal Investigator
      伊藤 公平
    • Project Period (FY)
      1997
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Keio University
  •  Research on epitaxial growth of functional group-IV semiconductor superstructures and application to VLSIPrincipal Investigator

    • Principal Investigator
      SHIRAKI Yasuhiro
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Domain-Inversion Epitaxy and Its Application to Wavelength Conversion Devices

    • Principal Investigator
      ITO Ryoichi
    • Project Period (FY)
      1996 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Research on Optical Transitions of Indirect Semiconductors with Novel SuperstructuresPrincipal Investigator

    • Principal Investigator
      SHIRAKI Yasuhiro
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Ultimate Materials and Processes for Integrated Intelligent System

    • Principal Investigator
      HORIIKE Yasuhiro
    • Project Period (FY)
      1995 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
      Toyo University
  •  量子半導体プロセス技術

    • Principal Investigator
      中島 尚男
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  ガリウム砒素リン系半導体超格子構造による高効率発光素子材料の実現

    • Principal Investigator
      矢口 裕之
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Advanced Science and Technology for Semiconductor Materials and Devices

    • Principal Investigator
      KUKIMOTO Hiroshi
    • Project Period (FY)
      1994
    • Research Category
      Grant-in-Aid for international Scientific Research
    • Research Institution
      Tokyo Institute of Technology
  •  Control of Optical Transitions with Quantum Microstructures of Indirect SemiconductorsPrincipal Investigator

    • Principal Investigator
      SHIRAKI Yasuhiro
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  STUDY ON GROWTH AND MATERIAL PROPERTIES OF METASTABLE NITRIDE ALLOY SEMICONDUCTORS

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      THE UNIVERSITY OF TOKYO
  •  Research on Frequency Conversion in Nonlinear Optical Heterostructures

    • Principal Investigator
      ITO Ryoichi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      The University of Tokyo
  •  Advanced Science and Technology for Semiconductor Materials and Devices

    • Principal Investigator
      KUKIMOTO Hiroshi
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Overseas Scientific Survey.
    • Research Institution
      Tokyo Institute of Technology
  •  LUMINESCENCE BY INDIRECT GAP SEMICONDUCTOR

    • Principal Investigator
      SAKAKI Akio
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for Co-operative Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      KYOTO UNIVERSITY
  •  Edge States in Two-Dimensional Electron Gas Systems at High Magnetic Fields Studies in Terms Spectroscopic Approach.

    • Principal Investigator
      KOMIYAMA Susumu
    • Project Period (FY)
      1993 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      固体物性Ⅱ(磁性・金属・低温)
    • Research Institution
      The University of Tokyo
  •  ナイトライド系化合物半導体の立方晶構造変換ヘテロエピタキシー機構の研究

    • Principal Investigator
      尾鍋 研太郎
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  Control of resonant electron capture in semiconductor quantum structuresPrincipal Investigator

    • Principal Investigator
      SHIRAKI Yasuhiro
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The University of Tokyo
  •  Davelopment of Nonlinear Optical Frequency-Conversion Micro Devices Using Micro-Fabrication Technique for Organic Crystals

    • Principal Investigator
      ITO Ryoichi
    • Project Period (FY)
      1992 – 1994
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      物理計測・光学
    • Research Institution
      The University of Tokyo
  •  電子波デバイスのための極限構造の制御と評価Principal Investigator

    • Principal Investigator
      白木 靖寛
    • Project Period (FY)
      1991 – 1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  界面の作製とその精密制御

    • Principal Investigator
      安田 幸夫
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  電子波デバイスのための極限構造の制御と評価Principal Investigator

    • Principal Investigator
      白木 靖寛
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  人工パイエルスポテンシャル格子における塑性変形機構

    • Principal Investigator
      前田 康二
    • Project Period (FY)
      1991
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  人工パイエルスポテンシャル格子における塑性変形機構

    • Principal Investigator
      前田 康二
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      The University of Tokyo
  •  界面の作製とその精密制御

    • Principal Investigator
      安田 幸夫
    • Project Period (FY)
      1990
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  界面の作製とその精密制御

    • Principal Investigator
      YASUDA Yukio
    • Project Period (FY)
      1989
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  Integer Quantum Hall Effect in the Presence of Elastic Backscattering of Electrons

    • Principal Investigator
      KOMIYAMA Susumu
    • Project Period (FY)
      1989 – 1991
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      固体物性
    • Research Institution
      University of Tokyo
  •  Study on Atomic Layer Epitaxy of Wide-Gap Compound Semiconductors by Metalorganic Vapor Phase Growth

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      1989 – 1991
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      The University of Tokyo
  •  Development of scanning tunneling microscope for materials growth front observations on an atomic scalePrincipal Investigator

    • Principal Investigator
      SHIRAKI Yasuhiro
    • Project Period (FY)
      1989 – 1991
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      Applied materials
    • Research Institution
      The University of Tokyo
  •  Fabrications of a Germanium Laser Tunable in a Far-Infrared Range from 70 to 300mum.

    • Principal Investigator
      KOMIYAMA Susumu
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B).
    • Research Field
      Applied materials
    • Research Institution
      College of Arts and Sciences, Univ, Tokyo

All 2012 2011 2010 2009

All Journal Article Presentation Book

  • [Book] Silicon-germanium (SiGe) nanostructures2011

    • Author(s)
      Y.Shiraki N.Usami
    • Total Pages
      627
    • Publisher
      Woodhead Publishing
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Book] Silicon germanium (SiGe)nanostructures2011

    • Author(s)
      Y. Shiraki and N. Usami
    • Total Pages
      627
    • Publisher
      Woodhead Publishing
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Room temperature electroluminescence from Ge quantum dots embedded in photonic crystal microcavities2012

    • Author(s)
      Toshiki Tsuboi, Xuejun Xu, Jinsong Xia,Noritaka Usami, Takuya Maruizumi, andYasuhiro Shiraki
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 5 Pages: 052101-052101

    • DOI

      10.1143/apex.5.052101

    • NAID

      10030593466

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] High-quality-factor light-emitting diodes with modified photonic crystal nanocavities including Ge self-assembled quantum dots on silicon-on-insulator substrates2012

    • Author(s)
      Xuejun Xu, Taichi Chiba, Tatsuya Nakama, Takuya Maruizumi, and Yasuhiro Shiraki
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 10 Pages: 102101-102101

    • DOI

      10.1143/apex.5.102101

    • NAID

      10031117543

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Silicon-based light emitting devices based on Ge self-assembled quantum dots embedded in optical cavity2012

    • Author(s)
      Xuejun Xu, Sho Narusawa, Taichi Chiba, Toshiki Tsuboi, Jinsong Xia, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki
    • Journal Title

      IEEE Journal of Selected Topics inQuantum Electronics

      Volume: 18(6) Issue: 6 Pages: 1830-1838

    • DOI

      10.1109/jstqe.2012.2206802

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si+ Ion Implantation2012

    • Author(s)
      Motoki Satoh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Yasuhiro Shiraki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 51 Issue: 10R Pages: 105801-105801

    • DOI

      10.1143/jjap.51.105801

    • NAID

      210000141389

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Silicon-based current-injected light emitting diodes with Ge self-assembled quantum dots embedded in photonic crystal nanocavities2012

    • Author(s)
      Xuejun Xu, Toshiki Tsuboi, Taichi Chiba, Noritaka Usami, Takuya Maruizumi, and Yasuhiro Shiraki
    • Journal Title

      Optics Express

      Volume: 20(13) Issue: 13 Pages: 14714-14721

    • DOI

      10.1364/oe.20.014714

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Electroluminescence from micro-cavities of photonic crystals, micro-disks and rings including Ge dots formed on SOI substrates2012

    • Author(s)
      Y. Shiraki
    • Journal Title

      ECS Transactions

      Volume: 45(5) Issue: 5 Pages: 235-246

    • DOI

      10.1149/1.3700432

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe Heterostructures2012

    • Author(s)
      T. Tanaka, Y. Hoshi, K. Sawano, N. Usami, Y. Shiraki, and K. M. Itoh
    • Journal Title

      Appl. Phys. Lett.

      Volume: 100 Issue: 22 Pages: 222102-222102

    • DOI

      10.1063/1.4723690

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003, KAKENHI-PROJECT-22241024
  • [Journal Article] Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation2011

    • Author(s)
      Y.Hoshi, K.Sawano, A.Yamada, S.Nagakura, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
    • Journal Title

      Applied Physics Express

      Volume: 4 Issue: 9 Pages: 095701-095701

    • DOI

      10.1143/apex.4.095701

    • NAID

      10029622735

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels2011

    • Author(s)
      K.Sawano, K.Toyama, R.Masutomi, T.Okamoto, K.Arimoto, K.Nakagawa, N.Usami, Y.Shiraki
    • Journal Title

      Microelectronic Engineering

      Volume: 88 Pages: 465-468

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Self-diffusion in compressively strained Ge2011

    • Author(s)
      Yoko Kawamura, Masashi Uematsu, Yusuke Hoshi, Kentarou Sawano, Maksym Myronov, Yasuhiro Shiraki, Eugene E.Haller, Kohei M.Itoh
    • Journal Title

      Journal of Applied Physics

      Volume: 110 Issue: 1

    • DOI

      10.1115/1.4004462

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Line width dependence of anisotropic strain state in SiGe films induced by selective ion implantation2011

    • Author(s)
      Y. Hoshi, K. Sawano, A. Yamada, S. Nagakura, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
    • Journal Title

      Applied Physics Express

      Volume: 4 Pages: 95701-95701

    • NAID

      10029622735

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems2011

    • Author(s)
      Yun-Sok Shin, Roland Brunner, Akihiro Shibatomi, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Yasuhiro Shiraki, Kentarou Sawano, Yasuhiro Tokura, Yuichi Harada, Koji Ishibashi, Seigo Tarucha
    • Journal Title

      Semiconductor Science and Technology

      Volume: 26

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems2011

    • Author(s)
      R. Masutomi, K. Sasaki, I. Yasuda, A. Sekine, K. Sawano, Y. Shiraki, and T. Okamoto
    • Journal Title

      Physical Review Letters

      Volume: 106 Issue: 19 Pages: 196404-196404

    • DOI

      10.1103/physrevlett.106.196404

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21244047, KAKENHI-PROJECT-21246003, KAKENHI-PROJECT-23740233
  • [Journal Article] Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon2011

    • Author(s)
      Hiroki Morishita, Eisuke Abe, Waseem Akhtar, Leonid S.Vlasenko, Akira Fujimoto, Kentarou Sawano, Yasuhiro Shiraki, Lukas Dreher, Helge Riemann, Nikolai V.Abrosimov, Peter Becker, Hans-J.Pohl, Mike L.W.Thewalt, Martin S.Brandt, Kohei M.Itoh
    • Journal Title

      Applied Physics Express

      Volume: 4

    • NAID

      10027782881

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Electrical detection of cross relaxation between electron spins of phosphorus and oxygen-vacancy centers in silicon2011

    • Author(s)
      W.Akhtar, H.Morishita, K.Sawano, Y.Shiraki, L.S.Vlasenko, K.M.Itoh
    • Journal Title

      Physical Review B

      Volume: 84 Issue: 4 Pages: 45204-45204

    • DOI

      10.1103/physrevb.84.045204

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003, KAKENHI-PROJECT-22241024
  • [Journal Article] Formation of Uniaxially Strained SiGe by Selective Ion Implantation Technique2010

    • Author(s)
      Kentarou Sawano, Yusuke Hoshi, AtsunoriYamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, and Yasuhiro Shiraki
    • Journal Title

      Thin Solid Films

      Volume: 518 Pages: 2454-2454

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Quantum Transport and Cyclotron Resonance Study of Ge/SiGe Quantum Wells in High Magnetic Fields2010

    • Author(s)
      N.Miura, N.V.Kozlova, K.Dorr, J.Freudenberger, L.Schultz, O.Drachenko, K.Sawano, Y Shiraki
    • Journal Title

      Journal of Low Temperature Physics

      Volume: 159 Pages: 222-225

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Optical anisotropies of Si grown on step-graded SiGe(110) layers2010

    • Author(s)
      R.E.Balderas-Navarro, L.F.Lastras-Martinez, K.Arimoto, R.Castro-Garcia, O.Villalobos-Aguilar, A.Lastras-Martinez, K.Nakagawa, K.Sawano, Y.Shiraki, N.Usami, K.Nakajima
    • Journal Title

      Applied Physics Letters

      Volume: 96

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Landau level crossing and pseudospin phase transitions in Si quantum wells2010

    • Author(s)
      Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto
    • Journal Title

      Physica E : Low-dimensional Systems and Nanostructures

      Volume: 42 Pages: 1018-1021

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Ultrashallow Ohmic contacts for n-type Ge by Sb --doping2010

    • Author(s)
      K. Sawano, Y. Hoshi, K. Kasahara, K. Yamane, K. Hamaya, M. Miyao, and Y. Shiraki
    • Journal Title

      Appl. Phys. Lett.

      Volume: 97 Pages: 162108-162108

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Study of HfO_2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron Spectroscopy2010

    • Author(s)
      Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentarou Sawano, Maksym Myronov, Hiroshi Nohira, Yasuhiro Shiraki
    • Journal Title

      ECS Transaction

      Volume: 33 Pages: 467-472

    • NAID

      110008900164

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique2010

    • Author(s)
      Y. Hoshi, K. Sawano, A. Yamada, N. Usami,K. Arimoto, K. Nakagawa, and Y. Shiraki
    • Journal Title

      J. Appl. Phys.

      Volume: 107 Pages: 103509-103509

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Cyclotron resonance of two-dimensional electrons in a Si quantum well2010

    • Author(s)
      R.Masutomi, A.Sekine, K.Sasaki, K.Sawano, Y.Shiraki, T.Okamoto
    • Journal Title

      Physica E : Low-dimensional Systems and Nanostructures

      Volume: 42 Pages: 1184-1187

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Ultrashallow Ohmic contacts for n-type Ge by Sb δ-doping2010

    • Author(s)
      K.Sawano, Y Hoshi, K.Kasahara, K.Yamane, K.Hamaya, M.Miyao, Y.Shiraki
    • Journal Title

      Applied Physics Letters

      Volume: 97

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Formation of Uniaxially Strained SiGe by Selective Ion Implantation Technique2010

    • Author(s)
      Kentarou Sawano, Yusuke Hoshi, Atsunori Yamada, Yoshiyasu Hiraoka, Noritaka Usami, Keisuke Arimoto, Kiyokazu Nakagawa, Yasuhiro Shiraki
    • Journal Title

      Thin Solid Films 518

      Pages: 2454-2456

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation2010

    • Author(s)
      Y.Hoshi, K.Sawano, A.Yamada, K.Arimoto, N.Usami, K.Nakagawa, Y.Shiraki
    • Journal Title

      Thin Solid Films 518

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Excitonic Aharonov-Bohm effect in isotopically pure 70GeO Si self-assembled type-II quantum dots2010

    • Author(s)
      Satoru Miyamoto, Oussama Moutanabbir, Toyofumi Ishikawa, Mikio Eto, Eugene E.Haller, Kentarou Sawano, Yasuhiro Shiraki, Kohei M.Itoh
    • Journal Title

      Physical Review B

      Volume: 82

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Room-temperature electroluminescence from Si microdisks with Ge quantum dots2010

    • Author(s)
      J. Xia, Y. Takeda, N. Usami, T. Maruizumi, and Y. Shiraki
    • Journal Title

      Optics Express

      Volume: 18 Pages: 13945-13950

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Ion dose, energy, and species dependencies of strain relaxation of SiGe buffer layers fabricated by ion implantation technique2010

    • Author(s)
      Y.Hoshi, K.Sawano, A.Yamada, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
    • Journal Title

      Journal of Applied Physics

      Volume: 107

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices2009

    • Author(s)
      Masashi Uematsu, Miki Naganawa, Yasuo Shimizu, Kohei M.Itoh, Kentarou Sawano, Yasuhiro Shiraki, Eugene E.Haller
    • Journal Title

      ECS Transaction 25

      Pages: 51-54

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Local Control of Strain in SiGe by Ion Implantation Technique2009

    • Author(s)
      K.Sawano, Y.Hoshi, Y.Hiraoka, N.Usami, K.Nakagawa, Y.Shiraki
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 806-808

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Well-width dependence of valley splitting in Si/SiGe quantum wells2009

    • Author(s)
      Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto
    • Journal Title

      Applied Physics Letters 95

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates2009

    • Author(s)
      Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 809-813

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures2009

    • Author(s)
      K. Sawano, K. Toyama, R. Masutomi, T. Okamoto, N. Usami, K. Arimoto, K. Nakagawa, and Y. Shiraki
    • Journal Title

      Appl. Phys. Lett.

      Volume: 95 Pages: 122109-122109

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates2009

    • Author(s)
      Keisuke Arimoto, Genki Kawaguchi, Kana Shimizu, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 814-818

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Strain dependence of hole effective mass and scattering mechanism in strained Ge channel structures2009

    • Author(s)
      K.Sawano, K.Toyama, R.Masutomi, T.Okamoto, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
    • Journal Title

      Applied Physics Letters 95

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method2009

    • Author(s)
      Y.Hoshi, K.Sawano, Y.Hiraoka, Y.Sato, Y.Ogawa, A.Yamada, N.Usami, K.Nakagawa, Y.Shiraki
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 825-828

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates2009

    • Author(s)
      Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima
    • Journal Title

      Solid-State Electronics 53

      Pages: 1135-1143

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Local Control of Strain in SiGe by IonImplantation Technique2009

    • Author(s)
      K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami , K. Nakagawa, Y. Shiraki
    • Journal Title

      Journal of Crystal Growth

      Volume: 311 Pages: 806-808

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Electrical detection and magnetic-field control of spin states in phosphorus-doped silicon2009

    • Author(s)
      H.Morishita, L.S.Vlasenko, H.Tanaka, K.Semba, K.Sawano, Y.Shiraki, M.Eto, K.M.Itoh
    • Journal Title

      Physical Review B 80

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots2009

    • Author(s)
      Jinsong Xia, Ryuichiro Tominaga, Seiji Fukamitsu, Noritaka Usami, Yasuhiro Shiraki
    • Journal Title

      Japanese Journal of Applied Physics 48

    • NAID

      40016464751

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures2009

    • Author(s)
      Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 819-824

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Journal Article] Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well2009

    • Author(s)
      Tohru Okamoto, Kohei Sasaki, Kiyohiko Toyama, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki
    • Journal Title

      Physical Review B 79

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Electroluminescence from micro-cavities of photonic crystals, micro-disks and rings including Ge dots formed on SOI substrates2012

    • Author(s)
      Yasuhiro Shiraki
    • Organizer
      221st ECS Meeting
    • Place of Presentation
      Seattle, Washington, US
    • Invited
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Electroluminescence from micro- cavities of photonic crystals, micro- disks and rings including Ge dots formed on SOI substrates2012

    • Author(s)
      Yasuhiro Shiraki
    • Organizer
      Invited221st ECS Meeting
    • Place of Presentation
      Seattle, Washington, USA
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Surface segregation behavior of Sb, B, Ga, and As dopant atoms on Ge(100) and Ge(111) surface examined with a first-principles method2011

    • Author(s)
      T.Maruizumi, Jiro Ushio, Shotaro Abe, Kentarou Sawano, Yasuhiro Shiraki
    • Organizer
      7th International Conference on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Si微小共振器中Ge量子ドットによる発光素子の開発2011

    • Author(s)
      丸泉琢也、夏金松、白木靖寛
    • Organizer
      電子通信情報学会2011年総合大会
    • Place of Presentation
      東京都市大(東京都)(招待講演)
    • Year and Date
      2011-03-14
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Fabrication of strained thin-film GOT based on wafer bonding2011

    • Author(s)
      Yusuke Hoshi, Kentarou Sawano, Kohei Hamaya, Masanobu Miyao, Yasuhiro Shiraki
    • Organizer
      7th International Conference on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-28
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Temperature dependence of two-dimensional hole gas mobility in a strained Ge quantum well2011

    • Author(s)
      T.Tanaka, K.Sawano, Y.Hoshi, Y.Shiraki, K.M.Itoh
    • Organizer
      The 19th international conference on Electronic Properties of Two-Dimensional Systems (EP2DS19)
    • Place of Presentation
      Florida, USA
    • Year and Date
      2011-07-25
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] XPS Study on Chemical Bonding States of high-kappa/high-k Gate Stacks for Advanced CMOS2011

    • Author(s)
      Hiroshi Nohira, Arata Komatsu, Koji Yamashita, Kuniyuki Kakushima, Hiroshi Iwai, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki
    • Organizer
      220th Meeting of The Electrochemical Society
    • Place of Presentation
      Boston, MA, USA(招待講演)
    • Year and Date
      2011-10-11
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Electroluminescence of a Si-based light emitting device using photonic crystal microcavity with self-assembled Ge dots2011

    • Author(s)
      T.Tsuboi, J.S.Xia, X.Xu, N.Usami, T.Maruizumi, Y.Shiraki
    • Organizer
      E-MRS 2011 Spring Meeting
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-10
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] A novel RCE waveguide photodetector based on SiGe/Si multiple-QWs2011

    • Author(s)
      Xuejun Xu, Jinsong Xia, Takuya Maruizumi, Yasuhiro Shiraki
    • Organizer
      7th International Conference on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-28
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Stripe line width dependence of anisotorpic strain states induced into SiGe films by selective ion implantation technique2011

    • Author(s)
      Y.Hoshi, K.Sawano, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
    • Organizer
      E-MRS 2011 Spring Meeting
    • Place of Presentation
      Nice, France
    • Year and Date
      2011-05-10
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Surface segregation behavior of B, Ga, Sb, and As dopant atoms on Ge(100) and Ge(111) examined with a first-principles method2011

    • Author(s)
      F.Iijima, K.Sawano, T.Maruizumi, Y.Shiraki
    • Organizer
      15th International Conference on Thin Films
    • Place of Presentation
      京都テルサ、京都
    • Year and Date
      2011-11-08
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Room temperature electroluminescence from Ge quantum dots embedded in photonic crystal microcavity2011

    • Author(s)
      Toshiki Tsuboi, Jinsong Xia, Xuejun Xu, Yuuki Takeda, Noritaka Usami, Takuya Maruizumi, Yasuhiro Shiraki
    • Organizer
      7th International Conference on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-28
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Microstructure Change of Si0.99C0.01 Thin Films Caused by Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation and Successive Rapid Thermal Annealing Treatment2011

    • Author(s)
      Shigenori Inoue, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
    • Organizer
      7th International Conference on Si Epitaxy and Heterostructures
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2011-08-28
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Effects of increased compressive strain on hole effective mass and scattering mechanisms in strained Ge channels2010

    • Author(s)
      K.Sawano, K.Toyama, R.Masutomi, T.Okamoto, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
    • Organizer
      E-MRS 2010 Spring Meeting, Symposium H
    • Place of Presentation
      Strasbourg (France)
    • Year and Date
      2010-06-10
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Study of HfO2/Si/Strained-Ge/SiGe Using Angle Resolved X-ray Photoelectron2010

    • Author(s)
      Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentarou Sawano, Maksym Myronov, Hiroshi Nohira, Yasuhiro Shiraki
    • Organizer
      218th Meeting of The Electrochemical Society
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2010-10-12
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] イオン注入法によるSi(111)基板上緩和SiGeバッファ層の作製2010

    • Author(s)
      久保智史, 澤野憲太郎, 星裕介, 中川清和, 白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Ge(111)への高濃度Sbデルタドーピングによる低抵抗コンタクト形成2010

    • Author(s)
      竹田圭吾, 星裕介, 笠原健司, 山根一高, 澤野憲太郎, 浜屋宏平, 宮尾正信, 白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Si/SiGe系2DEGのPdショットゲート制御による結合量子ドットの作製2010

    • Author(s)
      福岡佑二, 小寺哲夫, 大塚朋廣, 武田健太, 小幡利顕, 吉田勝治, 澤野憲太郎, 内田 建, 白木靖寛, 樽茶清悟, 小田俊理
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Effect of line width on uniasial strain states of SiGe layers fabricated by selective ion implantation2010

    • Author(s)
      Y.Hoshi, K.Sawano, A.Yamada, N.Usami, K.Arimoto, K.Nakagawa, Y.Shiraki
    • Organizer
      5th International SiGe Technology and Device Meeting (ISTDM)
    • Place of Presentation
      Stockholm (Sweden)
    • Year and Date
      2010-05-24
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] (110)面を表面に有する歪みSiの正孔移動度と結晶モフォロジーとの関係2010

    • Author(s)
      八木聡介, 有元圭介, 中川清和, 宇佐美徳隆, 中嶋一雄, 澤野憲太郎, 白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Ar^+およびSi^+イオン注入欠陥がSiGe層の歪緩和に与える影響2010

    • Author(s)
      星裕介, 澤野憲太郎, 宇佐美徳隆, 有元圭介, 中川清和, 白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] CVDにより作製した歪みGeチャネルの電気伝導特性2010

    • Author(s)
      榑林徹, 星裕介, 那須賢太郎, 澤野憲太郎, 宇佐美徳隆, 白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] 選択的イオン注入法により作製される一軸性歪みSiGeの表面構造評価2010

    • Author(s)
      永倉壮, 星裕介, 澤野憲太郎, 宇佐美徳隆, 中川清和, 白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Ge量子ドットを有する1次元フォトニック結晶微小共振器による1,3μm帯での単一ピーク発光2010

    • Author(s)
      小林正人、夏金松、武田雄貴、宇佐美徳隆、丸泉琢也、白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] フォトニック結晶微小共振器を用いたSi系発光デバイスのエレクトロルミネッセンス2010

    • Author(s)
      坪井俊紀、夏金松、深水聖司、宇佐美徳隆、丸泉琢也、白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-16
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] 角度分解X線光電子分光法によるHfO_2/Si/歪Ge/SiGe構造の評価II2010

    • Author(s)
      小松新, 那須賢太郎, 星裕介, 榑林徹, 澤野憲太郎, ミロノフマクシム, 野平博司, 白木靖寛
    • Organizer
      2010年秋季<第71回>応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-15
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Material aspects and characterization of Si/Ge hetero-structures on nano-scale for electronic and optical deviceapplications2009

    • Author(s)
      Y. Shiraki
    • Organizer
      Invited1st International Workshop on Si based nano-electronics and -photonics (SiNEP-09)
    • Place of Presentation
      Vigo, Spain
    • Year and Date
      2009-09-22
    • Data Source
      KAKENHI-PROJECT-21246003
  • [Presentation] Material aspects and characterization of Si/Ge hetero-structures on nano-scale for electronic and optical device applications (Invited)2009

    • Author(s)
      白木靖寛
    • Organizer
      1st International Workshop on Si based nano-electronics and -photonics (SiNEP-09)
    • Place of Presentation
      Vigo, Spain
    • Year and Date
      2009-09-22
    • Data Source
      KAKENHI-PROJECT-21246003
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